THIN FILM TRANSISTORS HAVING FIN STRUCTURES INTEGRATED WITH 2D CHANNEL MATERIALS
|First Publication Date||2023-03-23|
|Owner||Intel Corporation (USA)|
AbstractThin film transistors having fin structures integrated with two-dimensional (2D) channel materials are described. In an example, an integrated circuit structure includes a plurality of insulator fins above a substrate. A two-dimensional (2D) material layer is over the plurality of insulator fins. A gate dielectric layer is on the 2D material layer. A gate electrode is on the gate dielectric layer. A first conductive contact is on the 2D material layer adjacent to a first side of the gate electrode. A second conductive contact is on the 2D material layer adjacent to a second side of the gate electrode, the second side opposite the first side.
IPC Classes ?
- H01L 29/786 - Thin-film transistors
- H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate