THIN FILM TRANSISTORS HAVING FIN STRUCTURES INTEGRATED WITH 2D CHANNEL MATERIALS

Register USPTO Patent
Application Number 17479155
Status Pending
Filing Date 2021-09-20
First Publication Date 2023-03-23
Publication Date 2023-03-23
Owner Intel Corporation (USA)
Inventor
  • Maxey, Kirby
  • Penumatcha, Ashish Verma
  • O'Brien, Kevin P.
  • Dorow, Chelsey
  • Avci, Uygar E.
  • Lee, Sudarat
  • Naylor, Carl
  • Gosavi, Tanay

Abstract

Thin film transistors having fin structures integrated with two-dimensional (2D) channel materials are described. In an example, an integrated circuit structure includes a plurality of insulator fins above a substrate. A two-dimensional (2D) material layer is over the plurality of insulator fins. A gate dielectric layer is on the 2D material layer. A gate electrode is on the gate dielectric layer. A first conductive contact is on the 2D material layer adjacent to a first side of the gate electrode. A second conductive contact is on the 2D material layer adjacent to a second side of the gate electrode, the second side opposite the first side.

IPC Classes  ?

  • H01L 29/786 - Thin-film transistors
  • H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate