Register USPTO Patent
Application Number 17481760
Status Pending
Filing Date 2021-09-22
First Publication Date 2023-03-23
Publication Date 2023-03-23
Owner Intel Corporation (USA)
  • Sato, Noriyuki
  • Yoo, Hui Jae
  • Le, Van H.
  • Atanasov, Sarah
  • Sharma, Abhishek A.


Described herein are back-gated transistors with fin-shaped gates, and IC devices including such transistors. The transistor includes a gate electrode formed over a support structure, where the gate electrode includes a metal fin that extends perpendicular to the support structure. A gate dielectric formed of a metal oxide film is deposited over the gate electrode and conforming to the fin shape, and a channel material formed of a high mobility oxide semiconductor film is deposited over the gate dielectric, the channel material also conforming to the fin shape. Source and drain contacts may be arranged so that the fin creates a channel with a larger channel width or a longer channel length.

IPC Classes  ?

  • H01L 29/786 - Thin-film transistors
  • H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
  • H01L 29/66 - Types of semiconductor device