THIN FILM TRANSISTORS HAVING EDGE-MODULATED 2D CHANNEL MATERIAL
| Register | USPTO Patent |
|---|---|
| Application Number | 17482232 |
| Status | Pending |
| Filing Date | 2021-09-22 |
| First Publication Date | 2023-03-23 |
| Publication Date | 2023-03-23 |
| Owner | Intel Corporation (USA) |
| Inventor |
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Abstract
Thin film transistors having edge-modulated two-dimensional (2D) channel material are described. In an example, an integrated circuit structure includes a device layer including a two-dimensional (2D) material layer above a substrate, the 2D material layer including a center portion and first and second edge portions, the center portion consisting essentially of molybdenum or tungsten and of sulfur or selenium, and the first and second edge portions including molybdenum or tungsten and including tellurium.IPC Classes ?
- H01L 29/76 - Unipolar devices
- H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
- H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
- H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L 29/786 - Thin-film transistors
- H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
- H01L 29/66 - Types of semiconductor device