FIN TRIM PLUG STRUCTURES HAVING AN OXIDATION CATALYST LAYER SURROUNDED BY A RECESSED DIELECTRIC MATERIAL
|First Publication Date||2023-03-23|
|Owner||Intel Corporation (USA)|
AbstractFin trim plug structures for imparting channel stress are described. In an example, an integrated circuit structure includes a fin including silicon, the fin having a top and sidewalls. The fin has a trench separating a first fin portion and a second fin portion. A first gate structure including a gate electrode is over the top of and laterally adjacent to the sidewalls of the first fin portion. A second gate structure including a gate electrode is over the top of and laterally adjacent to the sidewalls of the second fin portion. An isolation structure is in the trench of the fin, the isolation structure between the first gate structure and the second gate structure. The isolation structure includes a first dielectric material laterally surrounding a recessed second dielectric material distinct from the first dielectric material, the recessed second dielectric material laterally surrounding an oxidation catalyst layer.
IPC Classes ?
- H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
- H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L 21/8234 - MIS technology
- H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L 29/66 - Types of semiconductor device
- H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
- H01L 21/762 - Dielectric regions
- H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof