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H01L 21/00
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Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof |
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H01L 21/02
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Manufacture or treatment of semiconductor devices or of parts thereof |
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H01L 21/04
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Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer |
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H01L 21/06
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Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials |
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H01L 21/08
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Preparation of the foundation plate |
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H01L 21/10
|
Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination |
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H01L 21/12
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Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate |
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H01L 21/14
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Treatment of the complete device, e.g. by electroforming to form a barrier |
|
H01L 21/16
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Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide |
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H01L 21/18
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Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials |
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H01L 21/20
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Deposition of semiconductor materials on a substrate, e.g. epitaxial growth |
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H01L 21/22
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Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant |
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H01L 21/24
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Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body |
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H01L 21/26
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Bombardment with wave or particle radiation |
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H01L 21/027
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Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or |
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H01L 21/28
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Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups |
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H01L 21/30
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Treatment of semiconductor bodies using processes or apparatus not provided for in groups |
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H01L 21/31
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Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers |
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H01L 21/32
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Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers using masks |
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H01L 21/33
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Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising three or more electrodes |
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H01L 21/34
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Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies not provided for in groups , , and with or without impurities, e.g. doping materials |
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H01L 21/36
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Deposition of semiconductor materials on a substrate, e.g. epitaxial growth |
|
H01L 21/38
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Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions |
|
H01L 21/40
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Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body |
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H01L 21/42
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Bombardment with radiation |
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H01L 21/44
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Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups |
|
H01L 21/46
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Treatment of semiconductor bodies using processes or apparatus not provided for in groups |
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H01L 21/47
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Organic layers, e.g. photoresist |
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H01L 21/48
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Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups |
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H01L 21/50
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Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups |
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H01L 21/52
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Mounting semiconductor bodies in containers |
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H01L 21/54
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Providing fillings in containers, e.g. gas fillings |
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H01L 21/56
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Encapsulations, e.g. encapsulating layers, coatings |
|
H01L 21/58
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Mounting semiconductor devices on supports |
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H01L 21/60
|
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation |
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H01L 21/62
|
Manufacture or treatment of semiconductor devices or of parts thereof the devices having no potential-jump barriers or surface barriers |
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H01L 21/64
|
Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not specially adapted for a single type of device provided for in groups or in subclasses , |
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H01L 21/66
|
Testing or measuring during manufacture or treatment |
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H01L 21/67
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Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components |
|
H01L 21/68
|
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment |
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H01L 21/70
|
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof |
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H01L 21/71
|
Manufacture of specific parts of devices defined in group |
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H01L 21/74
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Making of buried regions of high impurity concentration, e.g. buried collector layers, internal connections |
|
H01L 21/76
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Making of isolation regions between components |
|
H01L 21/77
|
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate |
|
H01L 21/78
|
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices |
|
H01L 21/82
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Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components |
|
H01L 21/84
|
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body |
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H01L 21/86
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Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS |
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H01L 21/98
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Assembly of devices consisting of solid state components formed in or on a common substrate; Assembly of integrated circuit devices |
|
H01L 21/103
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Conversion of the selenium or tellurium to the conductive state |
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H01L 21/105
|
Treatment of the surface of the selenium or tellurium layer after having been made conductive |
|
H01L 21/108
|
Provision of discrete insulating layers, i.e. non-genetic barrier layers |
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H01L 21/145
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Ageing |
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H01L 21/203
|
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering |
|
H01L 21/205
|
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition |
|
H01L 21/208
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Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition |
|
H01L 21/223
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Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a gaseous phase |
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H01L 21/225
|
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer |
|
H01L 21/228
|
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes |
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H01L 21/261
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Bombardment with wave or particle radiation to produce a nuclear reaction transmuting chemical elements |
|
H01L 21/263
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Bombardment with wave or particle radiation with high-energy radiation |
|
H01L 21/265
|
Bombardment with wave or particle radiation with high-energy radiation producing ion implantation |
|
H01L 21/266
|
Bombardment with wave or particle radiation with high-energy radiation producing ion implantation using masks |
|
H01L 21/268
|
Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation |
|
H01L 21/283
|
Deposition of conductive or insulating materials for electrodes |
|
H01L 21/285
|
Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation |
|
H01L 21/288
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Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition |
|
H01L 21/301
|
Treatment of semiconductor bodies using processes or apparatus not provided for in groups to subdivide a semiconductor body into separate parts, e.g. making partitions |
|
H01L 21/302
|
Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting |
|
H01L 21/304
|
Mechanical treatment, e.g. grinding, polishing, cutting |
|
H01L 21/306
|
Chemical or electrical treatment, e.g. electrolytic etching |
|
H01L 21/308
|
Chemical or electrical treatment, e.g. electrolytic etching using masks |
|
H01L 21/311
|
Etching the insulating layers |
|
H01L 21/312
|
Organic layers, e.g. photoresist |
|
H01L 21/314
|
Inorganic layers |
|
H01L 21/316
|
Inorganic layers composed of oxides or glassy oxides or oxide-based glass |
|
H01L 21/318
|
Inorganic layers composed of nitrides |
|
H01L 21/321
|
After-treatment |
|
H01L 21/322
|
Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections |
|
H01L 21/324
|
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering |
|
H01L 21/326
|
Application of electric currents or fields, e.g. for electroforming |
|
H01L 21/328
|
Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors |
|
H01L 21/329
|
Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors the devices comprising one or two electrodes, e.g. diodes |
|
H01L 21/331
|
Transistors |
|
H01L 21/332
|
Thyristors |
|
H01L 21/334
|
Multistep processes for the manufacture of devices of the unipolar type |
|
H01L 21/335
|
Field-effect transistors |
|
H01L 21/336
|
Field-effect transistors with an insulated gate |
|
H01L 21/337
|
Field-effect transistors with a PN junction gate |
|
H01L 21/338
|
Field-effect transistors with a Schottky gate |
|
H01L 21/339
|
Charge transfer devices |
|
H01L 21/363
|
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering |
|
H01L 21/365
|
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition |
|
H01L 21/368
|
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition |
|
H01L 21/383
|
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions using diffusion into, or out of, a solid from or into a gaseous phase |
|
H01L 21/385
|
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer |
|
H01L 21/388
|
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions using diffusion into, or out of, a solid from or into a liquid phase, e.g. alloy diffusion processes |
|
H01L 21/423
|
Bombardment with radiation with high-energy radiation |
|
H01L 21/425
|
Bombardment with radiation with high-energy radiation producing ion implantation |
|
H01L 21/426
|
Bombardment with radiation with high-energy radiation producing ion implantation using masks |
|
H01L 21/428
|
Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation |
|
H01L 21/441
|
Deposition of conductive or insulating materials for electrodes |
|
H01L 21/443
|
Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation |
|
H01L 21/445
|
Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition |
|
H01L 21/447
|
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups involving the application of pressure, e.g. thermo-compression bonding |
|
H01L 21/449
|
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups involving the application of mechanical vibrations, e.g. ultrasonic vibrations |
|
H01L 21/461
|
Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting |
|
H01L 21/463
|
Mechanical treatment, e.g. grinding, ultrasonic treatment |
|
H01L 21/465
|
Chemical or electrical treatment, e.g. electrolytic etching |
|
H01L 21/467
|
Chemical or electrical treatment, e.g. electrolytic etching using masks |
|
H01L 21/469
|
Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers |
|
H01L 21/471
|
Inorganic layers |
|
H01L 21/473
|
Inorganic layers composed of oxides or glassy oxides or oxide-based glass |
|
H01L 21/475
|
Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers using masks |
|
H01L 21/477
|
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering |
|
H01L 21/479
|
Application of electric currents or fields, e.g. for electroforming |
|
H01L 21/603
|
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of pressure, e.g. thermo-compression bonding |
|
H01L 21/607
|
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of mechanical vibrations, e.g. ultrasonic vibrations |
|
H01L 21/673
|
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers |
|
H01L 21/677
|
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations |
|
H01L 21/683
|
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping |
|
H01L 21/687
|
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches |
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H01L 21/761
|
PN junctions |
|
H01L 21/762
|
Dielectric regions |
|
H01L 21/763
|
Polycrystalline semiconductor regions |
|
H01L 21/764
|
Air gaps |
|
H01L 21/765
|
Making of isolation regions between components by field-effect |
|
H01L 21/768
|
Applying interconnections to be used for carrying current between separate components within a device |
|
H01L 21/782
|
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element |
|
H01L 21/784
|
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being a semiconductor body |
|
H01L 21/786
|
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being other than a semiconductor body, e.g. insulating body |
|
H01L 21/822
|
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology |
|
H01L 21/3063
|
Electrolytic etching |
|
H01L 21/3065
|
Plasma etching; Reactive-ion etching |
|
H01L 21/3105
|
After-treatment |
|
H01L 21/3115
|
Doping the insulating layers |
|
H01L 21/3205
|
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers |
|
H01L 21/3213
|
Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer |
|
H01L 21/3215
|
Doping the layers |
|
H01L 21/4757
|
After-treatment |
|
H01L 21/4763
|
Deposition of non-insulating-, e.g. conductive-, resistive-, layers on insulating layers; After-treatment of these layers |
|
H01L 21/8222
|
Bipolar technology |
|
H01L 21/8224
|
Bipolar technology comprising a combination of vertical and lateral transistors |
|
H01L 21/8226
|
Bipolar technology comprising merged transistor logic or integrated injection logic |
|
H01L 21/8228
|
Complementary devices, e.g. complementary transistors |
|
H01L 21/8229
|
Memory structures |
|
H01L 21/8232
|
Field-effect technology |
|
H01L 21/8234
|
MIS technology |
|
H01L 21/8236
|
Combination of enhancement and depletion transistors |
|
H01L 21/8238
|
Complementary field-effect transistors, e.g. CMOS |
|
H01L 21/8239
|
Memory structures |
|
H01L 21/8242
|
Dynamic random access memory structures (DRAM) |
|
H01L 21/8244
|
Static random access memory structures (SRAM) |
|
H01L 21/8246
|
Read-only memory structures (ROM) |
|
H01L 21/8247
|
Read-only memory structures (ROM) electrically-programmable (EPROM) |
|
H01L 21/8248
|
Combination of bipolar and field-effect technology |
|
H01L 21/8249
|
Bipolar and MOS technology |
|
H01L 21/8252
|
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology |
|
H01L 21/8254
|
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using II-VI technology |
|
H01L 21/8256
|
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using technologies not covered by one of groups , or |
|
H01L 21/8258
|
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by , , or |
|
H01L 23/00
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices |
|
H01L 23/02
|
Containers; Seals |
|
H01L 23/04
|
Containers; Seals characterised by the shape |
|
H01L 23/06
|
Containers; Seals characterised by the material of the container or its electrical properties |
|
H01L 23/08
|
Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass |
|
H01L 23/10
|
Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container |
|
H01L 23/12
|
Mountings, e.g. non-detachable insulating substrates |
|
H01L 23/13
|
Mountings, e.g. non-detachable insulating substrates characterised by the shape |
|
H01L 23/14
|
Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties |
|
H01L 23/15
|
Ceramic or glass substrates |
|
H01L 23/16
|
Fillings or auxiliary members in containers, e.g. centering rings |
|
H01L 23/18
|
Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device |
|
H01L 23/20
|
Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device gaseous at the normal operating temperature of the device |
|
H01L 23/22
|
Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device liquid at the normal operating temperature of the device |
|
H01L 23/24
|
Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel, at the normal operating temperature of the device |
|
H01L 23/26
|
Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances |
|
H01L 23/28
|
Encapsulation, e.g. encapsulating layers, coatings |
|
H01L 23/29
|
Encapsulation, e.g. encapsulating layers, coatings characterised by the material |
|
H01L 23/31
|
Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement |
|
H01L 23/32
|
Holders for supporting the complete device in operation, i.e. detachable fixtures |
|
H01L 23/34
|
Arrangements for cooling, heating, ventilating or temperature compensation |
|
H01L 23/36
|
Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks |
|
H01L 23/38
|
Cooling arrangements using the Peltier effect |
|
H01L 23/40
|
Mountings or securing means for detachable cooling or heating arrangements |
|
H01L 23/42
|
Fillings or auxiliary members in containers selected or arranged to facilitate heating or cooling |
|
H01L 23/043
|
Containers; Seals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body |
|
H01L 23/44
|
Arrangements for cooling, heating, ventilating or temperature compensation the complete device being wholly immersed in a fluid other than air |
|
H01L 23/045
|
Containers; Seals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base |
|
H01L 23/46
|
Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids |
|
H01L 23/047
|
Containers; Seals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base |
|
H01L 23/48
|
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements |
|
H01L 23/049
|
Containers; Seals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base |
|
H01L 23/50
|
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices |
|
H01L 23/051
|
Containers; Seals characterised by the shape the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type |
|
H01L 23/52
|
Arrangements for conducting electric current within the device in operation from one component to another |
|
H01L 23/053
|
Containers; Seals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body |
|
H01L 23/055
|
Containers; Seals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body the leads having a passage through the base |
|
H01L 23/057
|
Containers; Seals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body the leads being parallel to the base |
|
H01L 23/58
|
Structural electrical arrangements for semiconductor devices not otherwise provided for |
|
H01L 23/60
|
Protection against electrostatic charges or discharges, e.g. Faraday shields |
|
H01L 23/62
|
Protection against overcurrent or overload, e.g. fuses, shunts |
|
H01L 23/64
|
Impedance arrangements |
|
H01L 23/66
|
High-frequency adaptations |
|
H01L 23/367
|
Cooling facilitated by shape of device |
|
H01L 23/373
|
Cooling facilitated by selection of materials for the device |
|
H01L 23/427
|
Cooling by change of state, e.g. use of heat pipes |
|
H01L 23/433
|
Auxiliary members characterised by their shape, e.g. pistons |
|
H01L 23/467
|
Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing gases, e.g. air |
|
H01L 23/473
|
Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids |
|
H01L 23/482
|
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of lead-in layers inseparably applied to the semiconductor body |
|
H01L 23/485
|
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts |
|
H01L 23/488
|
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions |
|
H01L 23/492
|
Bases or plates |
|
H01L 23/495
|
Lead-frames |
|
H01L 23/498
|
Leads on insulating substrates |
|
H01L 23/522
|
Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body |
|
H01L 23/525
|
Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections |
|
H01L 23/528
|
Layout of the interconnection structure |
|
H01L 23/532
|
Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials |
|
H01L 23/535
|
Arrangements for conducting electric current within the device in operation from one component to another including internal interconnections, e.g. cross-under constructions |
|
H01L 23/538
|
Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates |
|
H01L 23/544
|
Marks applied to semiconductor devices, e.g. registration marks, test patterns |
|
H01L 23/552
|
Protection against radiation, e.g. light |
|
H01L 23/556
|
Protection against radiation, e.g. light against alpha rays |
|
H01L 25/00
|
Assemblies consisting of a plurality of individual semiconductor or other solid state devices |
|
H01L 25/03
|
Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes |
|
H01L 25/04
|
Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers |
|
H01L 25/07
|
Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group |
|
H01L 25/10
|
Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers |
|
H01L 25/11
|
Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group |
|
H01L 25/13
|
Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group |
|
H01L 25/16
|
Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits |
|
H01L 25/18
|
Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of , |
|
H01L 25/065
|
Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group |
|
H01L 25/075
|
Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group |
|
H01L 27/00
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate |
|
H01L 27/01
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate |
|
H01L 27/02
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier |
|
H01L 27/04
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body |
|
H01L 27/06
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration |
|
H01L 27/07
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common |
|
H01L 27/08
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind |
|
H01L 27/10
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration |
|
H01L 27/11
|
Static random access memory structures |
|
H01L 27/12
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body |
|
H01L 27/13
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components |
|
H01L 27/14
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy |
|
H01L 27/15
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission |
|
H01L 27/16
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including thermomagnetic components |
|
H01L 27/18
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components exhibiting superconductivity |
|
H01L 27/20
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including magnetostrictive components |
|
H01L 27/22
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects |
|
H01L 27/24
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier |
|
H01L 27/26
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including bulk negative resistance effect components |
|
H01L 27/28
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part |
|
H01L 27/30
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation |
|
H01L 27/32
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes |
|
H01L 27/082
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only |
|
H01L 27/085
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only |
|
H01L 27/088
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate |
|
H01L 27/092
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors |
|
H01L 27/095
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors |
|
H01L 27/098
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors |
|
H01L 27/102
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components |
|
H01L 27/105
|
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components |
|
H01L 27/108
|
Dynamic random access memory structures |
|
H01L 27/112
|
Read-only memory structures |
|
H01L 27/115
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor |
|
H01L 27/118
|
Masterslice integrated circuits |
|
H01L 27/142
|
Energy conversion devices |
|
H01L 27/144
|
Devices controlled by radiation |
|
H01L 27/146
|
Imager structures |
|
H01L 27/148
|
Charge coupled imagers |
|
H01L 27/1156
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate the floating gate being an electrode shared by two or more components |
|
H01L 27/1157
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by the memory core region with cell select transistors, e.g. NAND |
|
H01L 27/1158
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels |
|
H01L 27/1159
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] characterised by the memory core region |
|
H01L 27/11502
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with ferroelectric memory capacitors |
|
H01L 27/11504
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with ferroelectric memory capacitors characterised by the top-view layout |
|
H01L 27/11507
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with ferroelectric memory capacitors characterised by the memory core region |
|
H01L 27/11509
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with ferroelectric memory capacitors characterised by the peripheral circuit region |
|
H01L 27/11512
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with ferroelectric memory capacitors characterised by the boundary region between the core and peripheral circuit regions |
|
H01L 27/11514
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels |
|
H01L 27/11517
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate |
|
H01L 27/11519
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the top-view layout |
|
H01L 27/11521
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region |
|
H01L 27/11524
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region with cell select transistors, e.g. NAND |
|
H01L 27/11526
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the peripheral circuit region |
|
H01L 27/11529
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the peripheral circuit region of memory regions comprising cell select transistors, e.g. NAND |
|
H01L 27/11531
|
Simultaneous manufacturing of periphery and memory cells |
|
H01L 27/11534
|
Simultaneous manufacturing of periphery and memory cells including only one type of peripheral transistor |
|
H01L 27/11536
|
Simultaneous manufacturing of periphery and memory cells including only one type of peripheral transistor with a control gate layer also being used as part of the peripheral transistor |
|
H01L 27/11539
|
Simultaneous manufacturing of periphery and memory cells including only one type of peripheral transistor with an inter-gate dielectric layer also being used as part of the peripheral transistor |
|
H01L 27/11541
|
Simultaneous manufacturing of periphery and memory cells including only one type of peripheral transistor with a floating-gate layer also being used as part of the peripheral transistor |
|
H01L 27/11543
|
Simultaneous manufacturing of periphery and memory cells including only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor |
|
H01L 27/11546
|
Simultaneous manufacturing of periphery and memory cells including different types of peripheral transistor |
|
H01L 27/11548
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the boundary region between the core and peripheral circuit regions |
|
H01L 27/11551
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by three-dimensional arrangements, e.g. with cells on different height levels |
|
H01L 27/11553
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels |
|
H01L 27/11556
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels |
|
H01L 27/11558
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate the control gate being a doped region, e.g. single-poly memory cells |
|
H01L 27/11563
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM |
|
H01L 27/11565
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by the top-view layout |
|
H01L 27/11568
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by the memory core region |
|
H01L 27/11573
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by the peripheral circuit region |
|
H01L 27/11575
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by the boundary region between the core and peripheral circuit regions |
|
H01L 27/11578
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels |
|
H01L 27/11582
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels |
|
H01L 27/11585
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] |
|
H01L 27/11587
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] characterised by the top-view layout |
|
H01L 27/11592
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] characterised by the peripheral circuit region |
|
H01L 27/11595
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] characterised by the boundary region between core and peripheral circuit regions |
|
H01L 27/11597
|
Electrically programmable read-only memories; Multistep manufacturing processes therefor with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] characterised by three-dimensional arrangements, e.g. cells on different height levels |
|
H01L 29/00
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor bodies or of electrodes thereof |
|
H01L 29/02
|
Semiconductor bodies |
|
H01L 29/04
|
Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes |
|
H01L 29/06
|
Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions |
|
H01L 29/08
|
Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes |
|
H01L 29/10
|
Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes |
|
H01L 29/12
|
Semiconductor bodies characterised by the materials of which they are formed |
|
H01L 29/15
|
Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices |
|
H01L 29/16
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form |
|
H01L 29/18
|
Selenium or tellurium only, apart from doping materials or other impurities |
|
H01L 29/20
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds |
|
H01L 29/22
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds |
|
H01L 29/24
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or |
|
H01L 29/26
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , |
|
H01L 29/30
|
Semiconductor bodies having polished or roughened surface |
|
H01L 29/32
|
Semiconductor bodies having polished or roughened surface the imperfections being within the semiconductor body |
|
H01L 29/34
|
Semiconductor bodies having polished or roughened surface the imperfections being on the surface |
|
H01L 29/36
|
Semiconductor bodies characterised by the concentration or distribution of impurities |
|
H01L 29/38
|
Semiconductor bodies characterised by combination of features provided for in two or more of the groups , , , , |
|
H01L 29/40
|
Electrodes |
|
H01L 29/41
|
Electrodes characterised by their shape, relative sizes or dispositions |
|
H01L 29/43
|
Electrodes characterised by the materials of which they are formed |
|
H01L 29/45
|
Ohmic electrodes |
|
H01L 29/47
|
Schottky barrier electrodes |
|
H01L 29/49
|
Metal-insulator semiconductor electrodes |
|
H01L 29/51
|
Insulating materials associated therewith |
|
H01L 29/66
|
Types of semiconductor device |
|
H01L 29/68
|
Types of semiconductor device controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched |
|
H01L 29/70
|
Bipolar devices |
|
H01L 29/72
|
Transistor-type devices, i.e. able to continuously respond to applied control signals |
|
H01L 29/73
|
Bipolar junction transistors |
|
H01L 29/74
|
Thyristor-type devices, e.g. having four-zone regenerative action |
|
H01L 29/76
|
Unipolar devices |
|
H01L 29/78
|
Field-effect transistors with field effect produced by an insulated gate |
|
H01L 29/80
|
Field-effect transistors with field effect produced by a PN or other rectifying junction gate |
|
H01L 29/82
|
Types of semiconductor device controllable by variation of the magnetic field applied to the device |
|
H01L 29/84
|
Types of semiconductor device controllable by variation of applied mechanical force, e.g. of pressure |
|
H01L 29/86
|
Types of semiconductor device controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched |
|
H01L 29/87
|
Thyristor diodes, e.g. Shockley diodes, break-over diodes |
|
H01L 29/88
|
Tunnel-effect diodes |
|
H01L 29/92
|
Capacitors with potential-jump barrier or surface barrier |
|
H01L 29/93
|
Variable-capacitance diodes, e.g. varactors |
|
H01L 29/94
|
Metal-insulator-semiconductors, e.g. MOS |
|
H01L 29/96
|
Types of semiconductor device of a type covered by more than one of groups , , or |
|
H01L 29/161
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group |
|
H01L 29/165
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group in different semiconductor regions |
|
H01L 29/167
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form further characterised by the doping material |
|
H01L 29/201
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds |
|
H01L 29/205
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds in different semiconductor regions |
|
H01L 29/207
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material |
|
H01L 29/221
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds |
|
H01L 29/225
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds in different semiconductor regions |
|
H01L 29/227
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material |
|
H01L 29/267
|
Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , in different semiconductor regions |
|
H01L 29/417
|
Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched |
|
H01L 29/423
|
Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched |
|
H01L 29/732
|
Vertical transistors |
|
H01L 29/735
|
Lateral transistors |
|
H01L 29/737
|
Hetero-junction transistors |
|
H01L 29/739
|
Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect |
|
H01L 29/744
|
Gate-turn-off devices |
|
H01L 29/745
|
Gate-turn-off devices with turn-off by field effect |
|
H01L 29/747
|
Bidirectional devices, e.g. triacs |
|
H01L 29/749
|
Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect |
|
H01L 29/762
|
Charge transfer devices |
|
H01L 29/765
|
Charge-coupled devices |
|
H01L 29/768
|
Charge-coupled devices with field effect produced by an insulated gate |
|
H01L 29/772
|
Field-effect transistors |
|
H01L 29/775
|
Field-effect transistors with one-dimensional charge carrier gas channel, e.g. quantum wire FET |
|
H01L 29/778
|
Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT |
|
H01L 29/786
|
Thin-film transistors |
|
H01L 29/788
|
Field-effect transistors with field effect produced by an insulated gate with floating gate |
|
H01L 29/792
|
Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor |
|
H01L 29/808
|
Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a PN junction gate |
|
H01L 29/812
|
Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate |
|
H01L 29/861
|
Diodes |
|
H01L 29/862
|
Point contact diodes |
|
H01L 29/864
|
Transit-time diodes, e.g. IMPATT, TRAPATT diodes |
|
H01L 29/866
|
Zener diodes |
|
H01L 29/868
|
PIN diodes |
|
H01L 29/872
|
Schottky diodes |
|
H01L 29/885
|
Esaki diodes |
|
H01L 29/8605
|
Resistors with PN junction |
|
H01L 31/00
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof |
|
H01L 31/02
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details |
|
H01L 31/04
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices |
|
H01L 31/05
|
Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells |
|
H01L 31/06
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier |
|
H01L 31/07
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type |
|
H01L 31/08
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors |
|
H01L 31/09
|
Devices sensitive to infrared, visible or ultra- violet radiation |
|
H01L 31/10
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors |
|
H01L 31/11
|
Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor |
|
H01L 31/12
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto |
|
H01L 31/14
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices |
|
H01L 31/16
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources |
|
H01L 31/18
|
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof |
|
H01L 31/20
|
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor material |
|
H01L 31/024
|
Arrangements for cooling, heating, ventilating or temperature compensation |
|
H01L 31/028
|
Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System |
|
H01L 31/032
|
Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups |
|
H01L 31/036
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes |
|
H01L 31/041
|
Provisions for preventing damage caused by corpuscular radiation, e.g. for space applications |
|
H01L 31/042
|
PV modules or arrays of single PV cells |
|
H01L 31/043
|
Mechanically stacked PV cells |
|
H01L 31/044
|
PV modules or arrays of single PV cells including bypass diodes |
|
H01L 31/045
|
collapsible or foldable |
|
H01L 31/046
|
PV modules composed of a plurality of thin film solar cells deposited on the same substrate |
|
H01L 31/047
|
PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate |
|
H01L 31/048
|
Encapsulation of modules |
|
H01L 31/049
|
Protective back sheets |
|
H01L 31/052
|
Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells |
|
H01L 31/053
|
Energy storage means directly associated or integrated with the PV cell, e.g. a capacitor integrated with a PV cell |
|
H01L 31/054
|
Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means |
|
H01L 31/055
|
Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements |
|
H01L 31/056
|
Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type |
|
H01L 31/058
|
including means to utilise heat energy, e.g. hybrid systems, or a supplementary source of electric energy |
|
H01L 31/061
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being of the point-contact type |
|
H01L 31/062
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the metal-insulator-semiconductor type |
|
H01L 31/065
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type |
|
H01L 31/068
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells |
|
H01L 31/072
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type |
|
H01L 31/073
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells |
|
H01L 31/074
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells |
|
H01L 31/075
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells |
|
H01L 31/076
|
Multiple junction or tandem solar cells |
|
H01L 31/077
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials |
|
H01L 31/078
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups |
|
H01L 31/101
|
Devices sensitive to infrared, visible or ultraviolet radiation |
|
H01L 31/102
|
Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier |
|
H01L 31/103
|
Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type |
|
H01L 31/105
|
Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type |
|
H01L 31/107
|
Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode |
|
H01L 31/108
|
Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type |
|
H01L 31/109
|
Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type |
|
H01L 31/111
|
Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor |
|
H01L 31/112
|
Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor |
|
H01L 31/113
|
Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor |
|
H01L 31/115
|
Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation |
|
H01L 31/117
|
Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors |
|
H01L 31/118
|
Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors |
|
H01L 31/119
|
Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors |
|
H01L 31/147
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier |
|
H01L 31/153
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate |
|
H01L 31/167
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier |
|
H01L 31/173
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate |
|
H01L 31/0203
|
Containers; Encapsulations |
|
H01L 31/0216
|
Coatings |
|
H01L 31/0224
|
Electrodes |
|
H01L 31/0232
|
Optical elements or arrangements associated with the device |
|
H01L 31/0236
|
Special surface textures |
|
H01L 31/0248
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies |
|
H01L 31/0256
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by the material |
|
H01L 31/0264
|
Inorganic materials |
|
H01L 31/0272
|
Selenium or tellurium |
|
H01L 31/0288
|
Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material |
|
H01L 31/0296
|
Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe |
|
H01L 31/0304
|
Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds |
|
H01L 31/0312
|
Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC |
|
H01L 31/0328
|
Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups |
|
H01L 31/0336
|
Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System |
|
H01L 31/0352
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions |
|
H01L 31/0368
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors |
|
H01L 31/0376
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors |
|
H01L 31/0384
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material |
|
H01L 31/0392
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates |
|
H01L 31/0443
|
PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells |
|
H01L 31/0445
|
PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells |
|
H01L 31/0463
|
PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers |
|
H01L 31/0465
|
PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module |
|
H01L 31/0468
|
PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising specific means for obtaining partial light transmission through the module, e.g. partially transparent thin film solar modules for windows |
|
H01L 31/0475
|
PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays |
|
H01L 31/0525
|
Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements |
|
H01L 31/0687
|
Multiple junction or tandem solar cells |
|
H01L 31/0693
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells |
|
H01L 31/0725
|
Multiple junction or tandem solar cells |
|
H01L 31/0735
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells |
|
H01L 31/0745
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells |
|
H01L 31/0747
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells |
|
H01L 31/0749
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells |
|
H01L 33/00
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof |
|
H01L 33/02
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies |
|
H01L 33/04
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction |
|
H01L 33/06
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier |
|
H01L 33/08
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body |
|
H01L 33/10
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector |
|
H01L 33/12
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer |
|
H01L 33/14
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure |
|
H01L 33/16
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous |
|
H01L 33/18
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region |
|
H01L 33/20
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate |
|
H01L 33/22
|
Roughened surfaces, e.g. at the interface between epitaxial layers |
|
H01L 33/24
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction |
|
H01L 33/26
|
Materials of the light emitting region |
|
H01L 33/28
|
Materials of the light emitting region containing only elements of group II and group VI of the periodic system |
|
H01L 33/30
|
Materials of the light emitting region containing only elements of group III and group V of the periodic system |
|
H01L 33/32
|
Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen |
|
H01L 33/34
|
Materials of the light emitting region containing only elements of group IV of the periodic system |
|
H01L 33/36
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes |
|
H01L 33/38
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape |
|
H01L 33/40
|
Materials therefor |
|
H01L 33/42
|
Transparent materials |
|
H01L 33/44
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating |
|
H01L 33/46
|
Reflective coating, e.g. dielectric Bragg reflector |
|
H01L 33/48
|
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages |
|
H01L 33/50
|
Wavelength conversion elements |
|
H01L 33/52
|
Encapsulations |
|
H01L 33/54
|
Encapsulations having a particular shape |
|
H01L 33/56
|
Materials, e.g. epoxy or silicone resin |
|
H01L 33/58
|
Optical field-shaping elements |
|
H01L 33/60
|
Reflective elements |
|
H01L 33/62
|
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls |
|
H01L 33/64
|
Heat extraction or cooling elements |
|
H01L 35/00
|
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof |
|
H01L 35/02
|
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details |
|
H01L 35/04
|
Structural details of the junction; Connections of leads |
|
H01L 35/06
|
Structural details of the junction; Connections of leads detachable, e.g. using a spring |
|
H01L 35/08
|
Structural details of the junction; Connections of leads non-detachable, e.g. cemented, sintered, soldered |
|
H01L 35/10
|
Connections of leads |
|
H01L 35/12
|
Selection of the material for the legs of the junction |
|
H01L 35/14
|
Selection of the material for the legs of the junction using inorganic compositions |
|
H01L 35/16
|
Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur |
|
H01L 35/18
|
Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth |
|
H01L 35/20
|
Selection of the material for the legs of the junction using inorganic compositions comprising metals only |
|
H01L 35/22
|
Selection of the material for the legs of the junction using inorganic compositions comprising compounds containing boron, carbon, oxygen, or nitrogen |
|
H01L 35/24
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Selection of the material for the legs of the junction using organic compositions |
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H01L 35/26
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Selection of the material for the legs of the junction using compositions changing continuously or discontinuously inside the material |
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H01L 35/28
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only |
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H01L 35/30
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction |
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H01L 35/32
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device |
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H01L 35/34
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Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof |
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H01L 37/00
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Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof |
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H01L 37/02
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Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof using thermal change of dielectric constant, e.g. working above and below the Curie point |
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H01L 37/04
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Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof using thermal change of magnetic permeability, e.g. working above and below the Curie point |
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H01L 39/00
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Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof |
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H01L 39/02
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Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details |
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H01L 39/04
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Containers; Mountings |
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H01L 39/06
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Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the current path |
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H01L 39/08
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Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the shape of the element |
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H01L 39/10
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Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the means for switching |
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H01L 39/12
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Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the material |
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H01L 39/14
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Permanent superconductor devices |
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H01L 39/16
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Devices switchable between superconductive and normal states |
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H01L 39/18
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Cryotrons |
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H01L 39/20
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Power cryotrons |
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H01L 39/22
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Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices |
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H01L 39/24
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Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group or of parts thereof |
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H01L 41/00
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof |
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H01L 41/02
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details |
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H01L 41/04
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details of piezo-electric or electrostrictive elements |
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H01L 41/06
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details of magnetostrictive elements |
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H01L 41/08
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Piezo-electric or electrostrictive elements |
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H01L 41/09
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Piezo-electric or electrostrictive elements with electrical input and mechanical output |
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H01L 41/12
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Magnetostrictive elements |
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H01L 41/16
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Selection of materials |
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H01L 41/18
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Selection of materials for piezo-electric or electrostrictive elements |
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H01L 41/20
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Selection of materials for magnetostrictive elements |
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H01L 41/22
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Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof |
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H01L 41/23
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Forming enclosures or casings |
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H01L 41/24
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of elements of ceramic composition |
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H01L 41/25
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Assembling devices that include piezo-electric or electrostrictive parts |
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H01L 41/26
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of elements of macromolecular composition |
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H01L 41/27
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Manufacturing multilayered piezo-electric or electrostrictive devices or parts thereof, e.g. by stacking piezo-electric bodies and electrodes |
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H01L 41/29
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Forming electrodes, leads or terminal arrangements |
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H01L 41/31
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Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base |
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H01L 41/33
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Shaping or machining of piezo-electric or electrostrictive bodies |
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H01L 41/35
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Forming piezo-electric or electrostrictive materials |
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H01L 41/37
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Composite materials |
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H01L 41/39
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Inorganic materials |
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H01L 41/41
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Inorganic materials by melting |
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H01L 41/43
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Inorganic materials by sintering |
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H01L 41/45
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Organic materials |
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H01L 41/047
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Electrodes |
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H01L 41/053
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Mounts, supports, enclosures or casings |
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H01L 41/083
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Piezo-electric or electrostrictive elements having a stacked or multilayer structure |
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H01L 41/087
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Piezo-electric or electrostrictive elements formed as coaxial cables |
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H01L 41/107
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Piezo-electric or electrostrictive elements with electrical input and electrical output |
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H01L 41/113
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Piezo-electric or electrostrictive elements with mechanical input and electrical output |
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H01L 41/187
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Ceramic compositions |
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H01L 41/193
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Macromolecular compositions |
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H01L 41/253
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Treating devices or parts thereof to modify a piezo-electric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning |
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H01L 41/257
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Treating devices or parts thereof to modify a piezo-electric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising |
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H01L 41/273
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Manufacturing multilayered piezo-electric or electrostrictive devices or parts thereof, e.g. by stacking piezo-electric bodies and electrodes by integrally sintering piezo-electric or electrostrictive bodies and electrodes |
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H01L 41/277
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Manufacturing multilayered piezo-electric or electrostrictive devices or parts thereof, e.g. by stacking piezo-electric bodies and electrodes by stacking bulk piezo-electric or electrostrictive bodies and electrodes |
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H01L 41/293
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Connection electrodes of multilayered piezo-electric or electrostrictive parts |
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H01L 41/297
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Individual layer electrodes of multilayered piezo-electric or electrostrictive parts |
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H01L 41/311
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Mounting of piezo-electric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate |
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H01L 41/312
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Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by laminating or bonding of piezo-electric or electrostrictive bodies |
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H01L 41/313
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Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by laminating or bonding of piezo-electric or electrostrictive bodies by metal fusing or with adhesives |
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H01L 41/314
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Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing |
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H01L 41/316
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Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition |
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H01L 41/317
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Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition |
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H01L 41/318
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Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition |
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H01L 41/319
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Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control |
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H01L 41/331
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Shaping or machining of piezo-electric or electrostrictive bodies by coating or depositing using masks, e.g. lift-off |
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H01L 41/332
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Shaping or machining of piezo-electric or electrostrictive bodies by etching, e.g. lithography |
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H01L 41/333
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Shaping or machining of piezo-electric or electrostrictive bodies by moulding or extrusion |
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H01L 41/335
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Shaping or machining of piezo-electric or electrostrictive bodies by machining |
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H01L 41/337
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Shaping or machining of piezo-electric or electrostrictive bodies by machining by polishing or grinding |
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H01L 41/338
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Shaping or machining of piezo-electric or electrostrictive bodies by machining by cutting or dicing |
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H01L 41/339
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Shaping or machining of piezo-electric or electrostrictive bodies by machining by punching |
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H01L 43/00
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Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof |
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H01L 43/02
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Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details |
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H01L 43/04
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Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details of Hall-effect devices |
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H01L 43/06
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Hall-effect devices |
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H01L 43/08
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Magnetic-field-controlled resistors |
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H01L 43/10
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Selection of materials |
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H01L 43/12
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Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof |
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H01L 43/14
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Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof for Hall-effect devices |
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H01L 45/00
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Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof |
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H01L 45/02
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Solid state travelling-wave devices |
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H01L 47/00
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Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof |
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H01L 47/02
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Gunn-effect devices |
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H01L 49/00
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Solid state devices not provided for in groups and and not provided for in any other subclass; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof |
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H01L 49/02
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Thin-film or thick-film devices |
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H01L 51/00
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Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof |
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H01L 51/05
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Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier |
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H01L 51/10
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Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier - Details of devices |
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H01L 51/30
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Selection of materials |
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H01L 51/40
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Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof |
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H01L 51/42
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Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation |
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H01L 51/44
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Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices |
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H01L 51/46
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Selection of materials |
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H01L 51/48
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Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof |
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H01L 51/50
|
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) |
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H01L 51/52
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Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices |
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H01L 51/54
|
Selection of materials |
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H01L 51/56
|
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof |
