Abstract

A method for producing a display device comprising several pixels. The production of each pixel includes producing a stack forming p-i-n junctions of semiconductors corresponding to compounds comprising nitrogen and aluminium and/or gallium and/or indium atoms; implanting first, second and third rare earth ions respectively in first, second and third parts of a nest portion, through masks comprising first, second and third openings disposed respectively facing first, second and third regions of the stack respectively forming first, second and third light emission regions.

IPC Classes  ?

• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies

Abstract

A method for forming an ohmic contact on a layer of semiconductor material including germanium and tin. The method includes depositing a nickel-germanium layer onto the semiconductor material layer by a physical vapour deposition technique.

IPC Classes  ?

• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
• C23C 14/16 - Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
• C23C 14/30 - Vacuum evaporation by wave energy or particle radiation by electron bombardment
• C23C 14/34 - Sputtering
• C23C 14/46 - Sputtering by ion beam produced by an external ion source

Abstract

A method for sizing a greyscale lithography mask is disclosed. The mask includes first opaque zones, being opaque to light-exposing radiation, located in first pixels forming a first mask grating. A first target density of a first surface density of first opaque zones is first established. This first target density makes it possible to expose a resin to light over a first given target thickness when it is exposed to the radiation through the first grating. The dimensions of the first pixels and the dimensions of the first opaque zones are then established, such that the value of an error over the first target thickness is less than a first given threshold. The dimensions obtained for the sizing of the first mask grating are used.

IPC Classes  ?

• G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
• G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

Abstract

A light-emitting device includes a first electrode reflecting in a spectral range, a second electrode, and a light-emitting layer extending between the first and second electrodes and configured to emit electromagnetic radiation in the spectral range, the electromagnetic radiation emitted by the light-emitting layer being circularly polarized in a first polarization direction, the electromagnetic radiation reflected by the first electrode being circularly polarized in a second polarization direction, opposite to the first polarization direction. The second electrode is structured so as to define opaque patterns in the spectral range, arranged to block transmission of the circularly polarized electromagnetic radiation in the first polarization direction, and a spacing zone spacing apart the opaque patterns from one another and transparent in the spectral range so as to allow transmission of the circularly polarized electromagnetic radiation in the second polarization direction.

IPC Classes  ?

• H10K 50/80 - Constructional details
• H10K 50/813 - Anodes characterised by their shape
• H10K 50/818 - Reflective anodes, e.g. ITO combined with thick metallic layers
• H10K 50/822 - Cathodes characterised by their shape

Abstract

A method for fabricating a device includes the following steps: fabricating at least one first microstructure and one second microstructure on the substrate, fabricating a connection microstructure making it possible to electrically connect at least the first microstructure to the second microstructure by fabricating a support made of dielectric material by solidifying, by means of a lithography method, a part of a deposited resin layer and by depositing a first metallic layer on at least a part of the support comprising at least a part linking the first microstructure and the second microstructure.

IPC Classes  ?

• H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The invention relates to a functionalized structure (2) intended to be fastened to a traversable surface (200), comprising: - an interface layer (20), and - at least one functionalized slab (100) placed on the interface layer (20), the functionalized slab having a thickness of less than or equal to 10 millimetres, the interface layer (20) and the functionalized slab (100) being fastened to the traversable surface (200) via at least one fastening means (30, 30A) configured to engage with a portion of the functionalized structure (2) such that an engagement surface area between the fastening means (30, 30A) and a face (100A) of the functionalized structure (2) is less than 20% of the total surface area of said face (100A) of the functionalized structure (2).

IPC Classes  ?

• E01C 9/00 - Special pavings; Pavings for special parts of roads or airfields
• H02S 20/10 - Supporting structures directly fixed to the ground

Abstract

The present invention relates to a method for manufacturing a LGPS-type solid sulfide electrolyte. The present inventors have surprisingly found that by heat-treating of the mixed set of precursors at this high temperature and high pressure the solid sulfide electrolyte is obtained in high purity and in a short reaction time.

IPC Classes  ?

• H01M 6/18 - Cells with non-aqueous electrolyte with solid electrolyte
• H01M 10/052 - Li-accumulators
• H01M 10/0562 - Solid materials
• C01D 15/00 - Lithium compounds

Abstract

A process for manufacturing which comprises the following steps: a) supplying an aluminium alloy particle powder, b) applying a layer of powder to a solid substrate or to an underlying powder layer, c) locally melting the applied powder layer by laser beam scanning, to form a molten bath comprising a first surface in contact with the substrate or the underlying powder layer, d) cooling the molten bath at a cooling rate Vr to solidify it, where zirconium has been added before step c), the zirconium representing at least 0.7% by mass, relative to the total mass of the aluminium alloy, and the cooling rate Vr at the start of solidification at the first surface of the molten bath being: —less than Vrmax=w*9.106-4.106 where w is the percentage by mass of zirconium, and—strictly greater than Vrmin=106 K/s.

IPC Classes  ?

• B22F 10/28 - Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
• B22F 9/08 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
• B33Y 10/00 - Processes of additive manufacturing
• C22C 21/00 - Alloys based on aluminium

Abstract

A nuclear reactor with forced-convection liquid coolant and solid fuel assemblies incorporates a heat removal system using a liquid metal bath for removing the nominal heat and phase-change material(s) (PCM) for removing the decay heat in an accident situation. The solid-fuel nuclear reactor with liquid metal or molten salt primary coolant simultaneously ensures heat removal by forced convection in the primary circuit, in normal and accident operating modes, during shutdown through the primary vessel of the reactor, that is, beyond the second containment barrier. In the event of an incident or accident, a compact passive decay heat removal system is capable of performing the safety function for a predetermined period, typically three days, without any intervention by an operator, due to the presence of one or more PCM(s) that store(s) the decay heat produced in the core and removed by the primary vessel.

IPC Classes  ?

• G21C 1/03 - Fast fission reactors, i.e. reactors not using a moderator cooled by a coolant not essentially pressurised, e.g. pool-type reactors
• G21C 15/18 - Emergency cooling arrangements; Removing shut-down heat
• G21C 15/247 - Promoting flow of the coolant for liquids for liquid metals
• G21C 15/26 - Promoting flow of the coolant by convection, e.g. using chimneys, using divergent channels

Abstract

The present invention relates to a method for manufacturing a structure comprising a plurality of cavities confined between a thin layer and a carrier substrate, the method comprising the following steps: a) providing a donor substrate and a carrier substrate; b) implanting first light species into the donor substrate to form a uniform buried weakened plane which defines, together with the front face of the donor substrate, the thin layer to be transferred; c) locally implanting second species into the donor substrate so as to introduce these species into the uniform buried weakened plane only at second regions so as to form a functional buried weakened plane having: first regions comprising the first light species and not the second species, and the second regions comprising the first light species and the second species; d) forming a plurality of cavities that open onto a front face of the donor substrate or of the carrier substrate; e) joining, by direct bonding, the donor substrate to the carrier substrate, via their respective front faces, to form a bonded structure in which the cavities are vertically in line with either the first regions or the second regions of the functional buried weakened plane; f) applying a heat treatment to the bonded structure in order to cause spontaneous separation along the functional buried weakened plane and form the structure on the one hand and the rest of the donor substrate on the other hand.

IPC Classes  ?

• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate

Abstract

The invention relates to an electric machine with a permanent magnet rotor, the rotor comprising a magnetic circuit (22) and at least one permanent magnet (20), the permanent magnet (20) extending along the axis of rotation of the electric machine and having an overall shape of radial section, the magnetic circuit (22) comprising a cavity (26) configured to contain the permanent magnet (20), the magnetic circuit comprising at least one lumen (28, 30) opening onto the cavity (26), in the lumen (28, 30) an outer surface (38, 40) of the permanent magnet (20) is distant from the magnetic circuit (22) so as to form a barrier to the magnetic flux generated by the permanent magnet (20). The magnetic circuit (22) comprises, in the lumen (28, 30), an elastic part (32, 34) bearing against the permanent magnet (20) in order to limit the displacement of the permanent magnet (20), in translation parallel to the axis of rotation.

IPC Classes  ?

• H02K 1/276 - Magnets embedded in the magnetic core, e.g. interior permanent magnets [IPM]
• H02K 15/03 - Methods or apparatus specially adapted for manufacturing, assembling, maintaining or repairing of dynamo-electric machines of stator or rotor bodies having permanent magnets

Abstract

A method for producing a native emission matrix including the following steps of: a) providing a base structure including, successively, a substrate, a GaN layer, a doped In(x)GaN layer where x is from 0 to 8%, and an unintentionally doped In(x)GaN epitaxial regrowth layer; b) patterning mesas in the base structure, the mesas comprising a portion of the doped In(x)GaN layer and the unintentionally doped In(x)GaN epitaxial regrowth layer, whereby the mesas are electrically interconnected with one another; c) porosifying electrochemically the doped In(x)GaN layer; and d) carrying out a first LED structure and a second LED structure on the mesas, whereby a first LED having a first emission wavelength, and a second LED having a second emission wavelength, respectively, are obtained, and a native emission matrix is formed

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

The present description concerns a switch including: first, second, third, and fourth conductive regions; a first region made of a phase-change material coupling the first and second conductive regions; a second region made of a phase-change material coupling the second and third conductive regions; and a third region made of a phase-change material coupling the second and fourth conductive regions.

IPC Classes  ?

• H10N 70/20 - Multistable switching devices, e.g. memristors
• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching

Abstract

A method for manufacturing a detection device includes steps of: producing thermal detectors distributed in a detection array and a compensation array using mineral sacrificial layers; producing an encapsulation structure comprising a thin opaque layer extending above the compensation array; partially removing the mineral sacrificial layers by chemical etching, so as to release the detection array and the compensation array, and to obtain the peripheral wall then formed of a non-etched portion of the mineral sacrificial layers and surrounding the compensation array, the thin opaque layer then being suspended above the compensation array and resting on the peripheral wall.

IPC Classes  ?

• G01J 5/04 - Casings
• G01J 5/02 - Constructional details
• G01J 5/06 - Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
• G01J 5/70 - Passive compensation of pyrometer measurements, e.g. using ambient temperature sensing or sensing of temperature within housing

Abstract

A switch including: first, second, and third electrodes; a region of phase-change material coupling the first, second, and third electrodes; and first, second, and third heater elements connected between a first surface of the region of phase-change material and the first, second, and third electrodes, respectively, the second and third heater elements being intended to modify the state of the phase-change material in first and second areas within said region.

IPC Classes  ?

• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
• H10N 70/20 - Multistable switching devices, e.g. memristors

Abstract

The present invention relates to new tetrahydroquinoline (THQ) compounds and new methods for synthetizing such compounds. The present invention relates to new tetrahydroquinoline (THQ) compounds and new methods for synthetizing such compounds. The present invention relates to the applications thereof, in particular in therapeutic treatment. The present invention relates to new tetrahydroquinoline (THQ) compounds and new methods for synthetizing such compounds. The present invention relates to the applications thereof, in particular in therapeutic treatment. The present invention relates in particular to compound having the following structure: The present invention relates to new tetrahydroquinoline (THQ) compounds and new methods for synthetizing such compounds. The present invention relates to the applications thereof, in particular in therapeutic treatment. The present invention relates in particular to compound having the following structure: The present invention relates to new tetrahydroquinoline (THQ) compounds and new methods for synthetizing such compounds. The present invention relates to the applications thereof, in particular in therapeutic treatment. The present invention relates in particular to compound having the following structure: wherein R, R′, RA, Nu, R1, R2, R3, and R4 are each independently an atom or a chemical group of atoms.

IPC Classes  ?

• C07D 401/12 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings linked by a chain containing hetero atoms as chain links
• A61K 31/4706 - 4-Aminoquinolines; 8-Aminoquinolines, e.g. chloroquine, primaquine
• A61K 31/4709 - Non-condensed quinolines containing further heterocyclic rings
• A61K 31/506 - Pyrimidines; Hydrogenated pyrimidines, e.g. trimethoprim not condensed and containing further heterocyclic rings
• A61K 31/695 - Silicon compounds
• A61P 29/00 - Non-central analgesic, antipyretic or antiinflammatory agents, e.g. antirheumatic agents; Non-steroidal antiinflammatory drugs [NSAID]
• C07D 215/42 - Nitrogen atoms attached in position 4
• C07D 215/48 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen
• C07D 401/04 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings directly linked by a ring-member-to-ring- member bond
• C07D 401/14 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing three or more hetero rings
• C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
• C07F 11/00 - Compounds containing elements of Groups 6 or 16 of the Periodic System

Abstract

A photovoltaic cell includes a distribution track extending parallel to an edge and a plurality of collection fingers, the photovoltaic cell being remarkable in that the width of the distribution track is greater than the width of each collection finger; and wherein a plurality of interconnection conductors electrically connected to the distribution track and extending between said edge and the distribution track; and wherein the photovoltaic cell includes at least one free portion of its face delimited at least in part by the distribution track, the edge and two consecutive interconnection conductors.

IPC Classes  ?

• H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
• H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells

Abstract

This foam-generating device is easily transportable, free from fluid or power supply constraints, and able to supply a foam such as viscous foam with a high (low liquid fraction), time-invariant (low liquid fraction). The gas is withdrawn compressed from a cylinder, and a fixed fraction of its flow is used to drive a pneumatic pump which draws in the foaming liquid. The foam is formed in a mixer containing free-moving solids shortly before the ejection end of the device. The mixer has highly mobile balls in a cage of much larger dimensions; it is suitable for producing foam with a high overrun. Application: decontamination and depollution of large surfaces, buildings or indoor or outdoor structures.

IPC Classes  ?

• B01F 25/452 - Mixers in which the materials to be mixed are pressed together through orifices or interstitial spaces, e.g. between beads characterised by elements provided with orifices or interstitial spaces
• B01F 23/235 - Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids for making foam
• B01F 35/21 - Measuring
• B01F 35/71 - Feed mechanisms
• B01F 35/75 - Discharge mechanisms
• B05B 7/00 - Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
• B05B 7/24 - Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas with means, e.g. a container, for supplying liquid or other fluent material to a discharge device
• B05B 12/00 - Arrangements for controlling delivery; Arrangements for controlling the spray area
• B08B 3/00 - Cleaning by methods involving the use or presence of liquid or steam

Abstract

A laser device including a first cavity forming a Mamyshev oscillator, comprising a bandpass first filter at the first wavelength, and a second filter that also transmits the wavelength but that is reflective at a second wavelength, a second cavity, containing the first cavity, for forming a continuous-wave laser beam at the first wavelength and/or at a third wavelength neighbouring the first wavelength, the separation between the first and third wavelengths being smaller than the spectral width of the first filter and of the second filter, and means for allowing or interrupting a continuous-wave oscillation at the first wavelength or at said neighbouring wavelength, in the second cavity.

IPC Classes  ?

• H01S 3/067 - Fibre lasers
• H01S 3/08022 - Longitudinal modes
• H01S 3/0941 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a semiconductor laser, e.g. of a laser diode
• H01S 3/1112 - Passive mode locking

Abstract

A method for imaging an area of interest on the ground uses a georadar equipped with a plurality of transmitter antennas and a plurality of receiver antennas. A bistatic RCS matrix is calculated at each point of a grid based on the matrix representing the MIMO channel modelling the propagation and the reflection in the area of interest, a matrix representing the losses along the propagation paths of the channel, and a phase-shifter matrix representing the delays on these same propagation paths. The bistatic RCS matrices relating to discrete frequencies belonging to the same coherence sub-band are summed and the elements of the matrices thus obtained are then summed incoherently to provide an overall backscatter coefficient for each point of the grid. Afterwards, an image representing this backscatter coefficient at each point of the grid is generated. A method for detecting a ground target-uses the same principle.

IPC Classes  ?

• G01S 13/88 - Radar or analogous systems, specially adapted for specific applications
• G01S 7/41 - RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES - Details of systems according to groups , , of systems according to group using analysis of echo signal for target characterisation; Target signature; Target cross-section
• G01S 13/00 - Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified

Abstract

A carrier (Sprt) for a composite substrate, the carrier (Sprt) comprising a layer (Trap) for trapping electrical charges, in contact with a base carrier (BSprt), the trapping layer (Trap) comprising a low permittivity layer made of a material having a relative dielectric permittivity lower than silicon dioxide, and the material which has a relative dielectric permittivity lower than silicon dioxide being SiOC or SiOCH.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

Some embodiments of an apparatus, for example a light-field apparatus, may include a microlens; a color filter system; and two or more plenoptic subpixel sensors, the two or more plenoptic subpixel sensors comprising two or more photodiodes formed in a silicon layer, wherein a pyramid shape is etched in the two or more respective silicon photodiodes formed in the silicon layer.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An interferometric system for detecting analytes present in a fluid sample, including: an array of Mach-Zehnder interferometers arranged periodically and rectangularly whose arms extend in a spiral and/or serpentine fashion with an aspect ratio equal to 1; and an array of sensitive surfaces each formed of receptors with which the analytes are able to interact by adsorption/desorption and arranged periodically and hexagonally.

IPC Classes  ?

• G01N 21/77 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
• G01N 21/25 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands

Abstract

A device including a sensor of a light signal. The sensor includes a first level stacked on a second level. Each level including comprises an array of pixels, each including at least one photodetector, each photodetector of the first level being stacked on a photodetector of the second level. Each level is associated with a frequency, the frequency of the second level being equal to k times the frequency of the first level. A circuit is configured to calculate a distance for each pixel and a depth map of a scene.

IPC Classes  ?

• G01S 7/481 - Constructional features, e.g. arrangements of optical elements
• G01S 7/4914 - Detector arrays, e.g. charge-transfer gates
• G01S 7/4915 - Time delay measurement, e.g. operational details for pixel components; Phase measurement
• G01S 17/32 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
• G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar

Abstract

Disclosed is an exoskeleton member (1) comprising: a first support (10); a second support (20); a reinforcement extending in a first direction (Dl) between the first support (10) and the second support (20) in order to transmit a compressive and/or tractive force from the first support (10) to the second support (20); a reinforcement restraining device (60) for applying a force on the reinforcement substantially normal to the first direction (Dl). Also disclosed is an exoskeleton comprising such a member.

IPC Classes  ?

• B25J 9/00 - Programme-controlled manipulators

Abstract

The invention relates to an electric power supply system for an item of electrical equipment, which comprises: a DC power supply bus, a first battery (BATT1) and a second battery (BATT2) which are connected in parallel and each able to deliver a first DC voltage on said DC power supply bus, an auxiliary battery (B_AUX) configured to deliver a second DC voltage (U_AUX), a control unit (UC) configured to: select at least one battery from among the first battery and the second battery in order to set said voltage on the DC power supply bus by connecting it to the DC power supply bus, order the unselected battery to be connected to the DC power supply bus, and said auxiliary battery (B_AUX) to be charged by placing it in series with the unselected battery and by switching the cells of said unselected battery in order to control a charge current (I_aux) for said auxiliary battery.

IPC Classes  ?

• B60L 58/20 - Methods or circuit arrangements for monitoring or controlling batteries or fuel cells, specially adapted for electric vehicles for monitoring or controlling batteries of two or more battery modules having different nominal voltages
• B60L 58/12 - Methods or circuit arrangements for monitoring or controlling batteries or fuel cells, specially adapted for electric vehicles for monitoring or controlling batteries responding to state of charge [SoC]
• B60L 58/21 - Methods or circuit arrangements for monitoring or controlling batteries or fuel cells, specially adapted for electric vehicles for monitoring or controlling batteries of two or more battery modules having the same nominal voltage
• B60L 58/22 - Balancing the charge of battery modules
• H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries

Abstract

The present description relates to an electromagnetic field probe (10) comprising: a ground plane (12); a capacitive roof (13); the ground plane and the capacitive roof being separated by a dielectric material (14); at least three vias (110, 111, 112) extending through the dielectric material and comprising at least one excitation via and at least one grounding via arranged so as to form, when the at least one excitation via is powered, two current loops, each current loop extending in the plane of the capacitive roof and in a direction orthogonal to said capacitive roof, so as to be sensitive to a magnetic field (H1, H2) parallel to the plane of the capacitive roof, the current loops having directions orthogonal to each other in the plane of the capacitive roof.

IPC Classes  ?

• G01R 29/08 - Measuring electromagnetic field characteristics

Abstract

A sleeve made of rigid tube into which the feed lines for feeding the waste to treated and the gases to be discharged lead. In order to avoid contamination or blockage of the sleeve, a tool for scraping the inner face of the wall thereof is added, in this case a terminal tubular section of one of the feed lines, which carries out orbital movements tangent to this inner face. Various cooling, rinsing and overpressure structures are added, as is a docking device extending at the bottom of the sleeve for connecting the latter to the heat treatment container.

IPC Classes  ?

• F23G 5/44 - Methods or apparatus, e.g. incinerators, specially adapted for combustion of waste or low-grade fuels - Details; Accessories

Abstract

A sensor of a reflected light signal for acquiring a depth map of the scene. Each depth pixel of the sensor includes at least one pair of photosites. Each pair of photosites incudes a first photosite of a first semiconductor substrate and a second photosite of a second substrate having the first substrate stacked thereon. Each pixel is configured to acquire, for each pair of photosites of the pixel, at least one sample of charges simultaneously photogenerated in photosensitive elements of the photosites of said pair.

IPC Classes  ?

• G01S 7/481 - Constructional features, e.g. arrangements of optical elements
• G01S 7/4914 - Detector arrays, e.g. charge-transfer gates
• G01S 7/4915 - Time delay measurement, e.g. operational details for pixel components; Phase measurement
• G01S 17/32 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
• G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar

Abstract

The invention relates to a method and system for remote execution services requested by at least one mobile device via a cellular communications network according to a communication protocol which is at least fourth-generation, a service being executed by a virtual machine of a current host server. The method comprises, for a given service request, a) calculating (52) a probabilities vector containing K components, each component being associated with a given moment in time from a set of K moments in time, b) selecting (54) a migration moment in time based on the calculated probabilities vector, c) determining (56) a number of replications of the virtual machine to be carried out at the selected migration moment in time in order to minimize a replication energy cost while providing a level of service continuity and calculating (56) a predicted gain for the migration.

IPC Classes  ?

• G06F 9/455 - Emulation; Interpretation; Software simulation, e.g. virtualisation or emulation of application or operating system execution engines

Abstract

A gas distribution assembly comprises a first plate and a second plate parallel with each other, the first plate comprising gas communication orifices. A sealing interface device includes seals disposed around communication orifices and a strut disposed in a coupling plane between the first and second plates. The strut and the seals form a sealing interface having two planes of symmetry perpendicular with each other and perpendicular to the coupling plane, the thickness of the seals before coupling under pressure of the first and second plates being greater than the thickness of the strut. Use for a high-temperature solid oxide electrolyser or fuel cell.

IPC Classes  ?

• H01M 8/04082 - Arrangements for control of reactant parameters, e.g. pressure or concentration
• C25B 9/60 - Constructional parts of cells
• H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte

Abstract

A photovoltaic string includes a first photovoltaic cell; a second photovoltaic cell; a first metal connector, the first photovoltaic cell being disposed between the second photovoltaic cell and the first metal connector, each of the first and second photovoltaic cells including a first face and a second face opposite to the first face, the first faces each including collection fingers extending parallel to each other, the first photovoltaic cell being interconnected to the second photovoltaic cell, the second face of the first photovoltaic cell partially covering the first face of the second photovoltaic cell, and first connection elements disposed on the first face of the first photovoltaic cell and extending beyond the first photovoltaic cell, up to the first metal connector, wherein the first connection elements electrically connect at least part of the collection fingers of the first face of the first photovoltaic cell to the first metal connector.

IPC Classes  ?

• H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
• H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
• H01L 31/0224 - Electrodes

Abstract

The present invention relates to an antigen-binding mutant antibody fragment comprising a mutated heavy chain variable domain, wherein the amino acid residue at position 128 according to the IMGT nomenclature of the heavy chain variable domain is substituted by a cysteine, provided that this fragment is not a Fab fragment in which the mutated heavy chain fragment corresponds to the amino acid sequence SEQ ID NO: 1 and the light chain fragment corresponds to the amino acid sequence SEQ ID NO: 2. The present invention also relates to nucleic acid molecules, vectors and host cells that can be used for the production of the mutant antibody fragment, final and intermediate conjugates comprising same and methods for the production of same, as well as various uses thereof.

Abstract

The present description concerns a transmitarray cell (105) adapted to implementing a full-duplex communication, the cell comprising: a first antenna element (105a) located on a first surface of the cell; a second antenna element (105b) located on a second surface of the cell, opposite to the first surface; a transmit channel comprising, between the first and second antenna elements, a first phase-shift and amplifier circuit (203a); and a receive channel comprising, between the first and second antenna elements, a second phase-shift and amplifier circuit (203b).

IPC Classes  ?

• H04B 1/38 - Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
• H01Q 3/36 - Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the distribution of energy across a radiating aperture varying the phase by electrical means with variable phase-shifters
• H01Q 21/24 - Combinations of antenna units polarised in different directions for transmitting or receiving circularly and elliptically polarised waves or waves linearly polarised in any direction
• H04B 1/04 - Circuits
• H04B 1/3805 - Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving with built-in auxiliary receivers

Abstract

The invention relates to a photovoltaic module, to a structural assembly, and to a method for producing such a module, this module comprising: - a photovoltaic assembly; - a recessed space (13); - two bypass conductors (10) connected to the two polarities of the photovoltaic assembly, extending longitudinally between the first-face wall (7) and the second-face wall (8), and opening into the recessed space (13), each with a connection surface (16) extending in the recessed space (13); - a bypass diode (6) arranged in the recessed space (13) and connected to the connection surface (16) of each bypass conductor (10); - a sealing coating (18) enveloping the bypass diode (6) and the two bypass conductors (10), this sealing coating (18) being contained within the thickness of the photovoltaic module as defined by the first-face wall (7) and the second-face wall (8).

IPC Classes  ?

• H01L 31/044 - PV modules or arrays of single PV cells including bypass diodes
• H01L 31/048 - Encapsulation of modules
• H02S 20/30 - Supporting structures being movable or adjustable, e.g. for angle adjustment
• H02S 30/10 - Frame structures
• B32B 17/00 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like

Abstract

A masterbatch including at least one thermoplastic polymer and at least one ionene polymer as well as to the production method thereof. Further, the use of such a masterbatch for producing an article having bacteriostatic or bactericidal properties.

IPC Classes  ?

• C08L 23/06 - Polyethene
• C08J 5/18 - Manufacture of films or sheets
• C08L 79/02 - Polyamines

Abstract

A system includes an HTE electrolyser, a first steam supply line, a first dihydrogen discharge line, a second dioxygen discharge line, a first heat exchange module configured to ensure a heat exchange between the first steam supply line and the first dihydrogen discharge line, a first module for recovering the thermal energy from the dihydrogen at the outlet of the first heat exchange module in favour of the first supply line, the recovery module comprising a first intermediate exchanger arranged on the first discharge line downstream from the first heat exchange module and configured to transfer the thermal energy from the dihydrogen to an intermediate fluid, and a first intermediate steam generator arranged on the first steam supply line configured to transfer the thermal energy from the intermediate fluid to the liquid water.

IPC Classes  ?

• C25B 1/042 - Hydrogen or oxygen by electrolysis of water by electrolysis of steam
• C25B 9/67 - Heating or cooling means
• C25B 15/08 - Supplying or removing reactants or electrolytes; Regeneration of electrolytes

Abstract

Method for producing a superconducting transistor comprising: producing a dummy gate on a first part of a semiconducting layer; producing superconducting electrodes such that the first part of the semiconducting layer comprises sides edges arranged against parts of the superconducting electrodes, and comprising a deposition of a superconducting material layer having first parts arranged against side edges of the dummy gate and second parts forming parts of the superconducting electrodes; producing lateral spacers next to the first parts of the superconducting material layer and on the second parts of the superconducting material layer; removing the dummy gate and the first parts of the superconducting material layer, creating a gate location arranged between the lateral spacers and above the first part of the semiconducting layer and above said parts of the superconducting electrodes; producing a gate in the gate location.

IPC Classes  ?

• H10N 60/10 - Junction-based devices
• H10N 60/01 - Manufacture or treatment

Abstract

A method for detecting a random transition in a conducting line, includes the steps of: making a first reference reflectometry measurement on the conducting line in order to deduce a reference time-domain reflectogram therefrom, identifying at least one characteristic of the reference time-domain reflectogram, making a second reflectometry measurement on the conducting line to obtain a second time-domain reflectogram, identifying the same at least one characteristic in the second time-domain reflectogram, and for each amplitude peak identified, determining a difference between the at least one characteristic measured on the reference time-domain reflectogram and the same characteristic measured on the second time-domain reflectogram, evaluating, from a plurality of successive measurements, whether the difference increases in absolute value, and, if this is the case, triggering a warning corresponding to the appearance of a random transition.

IPC Classes  ?

• G01R 31/11 - Locating faults in cables, transmission lines, or networks using pulse-reflection methods
• G01R 31/08 - Locating faults in cables, transmission lines, or networks

Abstract

A radiation detector may include an active structure having an input face and an output face for incident ionizing radiation. The active structure may include: a first organic scintillator including at least one neutron-absorbing material and enabling discrimination between fast neutrons, thermal neutrons, and photons; at least one second scintillator arranged in front of the first scintillator and capable of preferentially detecting the alpha and/or beta radiation, the two scintillators having, due to the choice of their constituents, different mean pulse decay constants, and the second scintillator having a thickness smaller than the first.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• G01T 1/203 - Measuring radiation intensity with scintillation detectors the detector being made of plastics
• G01T 3/06 - Measuring neutron radiation with scintillation detectors

Abstract

The invention relates to a semiconductor structure (100) that comprises a useful layer (10) made of monocrystalline semiconductor material and extending along a main plane (x, y), a support substrate (30) made of semiconductor material, and an interface area (20) between the useful layer (10) and the support substrate (30), the support substrate extending parallel to the main plane (x, y), the structure (100) being characterised in that the interface area (20) comprises nodules (21) that:—are electrically conductive, in that they contain a metal material forming ohmic contact with the useful layer (10) and the support substrate (30);—have a thickness, along an axis (z) normal to the main plane (x, y) , of less than or equal to 30 nm;—are separate or adjoining, the separate nodules (21) being separated from each other by regions (22) of direct contact between the useful layer (10) and the support substrate (30). The invention also relates to a method for manufacturing the structure (100).

IPC Classes  ?

• H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices

Goods & Services

Micro-machined miniature sensors and modules incorporating the aforesaid sensors, namely Movement sensors, Vibration sensors, Physical activity sensors, inertial sensors, Slope indicators, Accelerometers, Velocimeters, Gyrometers, Rate gyros, Gyrocompasses, inertial measurement unit, inertial navigation systems, Attitude and heading reference systems, Navigational instruments, Navigation sensors and systems for autonomous vehicles, Azimuth instruments; Pressure sensors, Pressure gauges, Barometers, Height gauges, Pitot tubes, flow rate sensors, Level sensors, Oscillators and Time records; micro electro-mechanical systems; Microelectromechanical systems (MEMS); Nanoelectromechanical systems (NEMS). Customised or tailored manufacturing, in relation to the following goods: Micro-machined miniature sensors and modules incorporating the aforesaid sensors, namely Movement sensors, Vibration sensors, Physical activity sensors, inertial sensors, slope indicators, accelerometers, velocimeters, gyrometers, gyroscopes, gyrocompasses, inertial measurement units, inertial navigation systems, attitude and heading reference systems, navigation instruments, navigation sensors and systems for autonomous vehicles, azimuth instruments, Pressure sensors, Pressure gauges, barometers, Altimeters, Pitot tubes, Flow sensors, Level sensors, Oscillators and Time records, electromechanical micro systems, micro-electromechanical systems (MEMS) and nanoelectromechanical systems (NEMS). Providing technological information; Design and development services; Technical surveys; Engineering services; Research services; Design and testing of new products; Conducting of technical feasibility studies; Design feasibility studies; Research and development for others; all the foregoing, In connection with the following goods: Micro-machined miniature sensors and modules incorporating the aforesaid sensors, namely: Motion recognizing sensors, Vibration sensors, inertial sensors, Physical activity sensors, Inclinometers, accelerometers, Velocimeters, gyrometers, Gyroscopes, Gyrocompasses, inertial measurement units, inertial navigation systems, attitude and heading reference systems, navigation sensors and systems for autonomous vehicles, navigation instruments, Azimuth instruments, Pressure sensors, Pressure gauges, Barometers, Altimeters, Pitot tubes, Flow sensors, Level detection sensors, Oscillators and Time records, micro electro-mechanical systems, Microelectromechanical systems (MEMS) and Nanoelectromechanical systems (NEMS).

Abstract

1234232213131218188-alkyl group being optionally substituted, n being an integer comprised between 1 and 4 (preferably equal to 1), They exhibit high cytotoxicity against cancer cells.

IPC Classes  ?

• C07D 233/64 - Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members with substituted hydrocarbon radicals attached to ring carbon atoms, e.g. histidine
• C07D 235/12 - Radicals substituted by oxygen atoms
• C07D 263/32 - Heterocyclic compounds containing 1,3-oxazole or hydrogenated 1,3-oxazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to ring carbon atoms
• C07D 277/24 - Radicals substituted by oxygen atoms
• A61P 35/00 - Antineoplastic agents
• A61K 31/4164 - 1,3-Diazoles

Abstract

x1-x22 undoped or doped with a doping element selected from one of the following elements: Si, Al, Gd, Ge, Y or N, with 0 < x < 1, wherein at least one of said first or second electrode (3) is formed of at least two layers comprising a first conductive layer (5) in contact with the layer of active material and selected to create oxygen vacancies in the layer (4) of active material and a second conductive layer (6) arranged on the first conductive layer.

IPC Classes  ?

• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 70/20 - Multistable switching devices, e.g. memristors

Abstract

INTINTMEMMEMINTMEMMEM), to enable different configurations corresponding to different phases for evaluating parameters of the pixel and in particular a ratio R=Cint/Cmem.

IPC Classes  ?

• H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
• H04N 25/671 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction

Abstract

The present description concerns an electronic circuit (10) for providing a digital signal (Sn) comprising a succession of ramps, the electronic circuit being clocked by a clock signal, the electronic circuit being configured to supply a number Nout of digital values of the digital signal at each cycle of the clock signal, Nout being greater than 1. The electronic circuit comprises a first memory (30) in which are stored, for each ramp, first data, and a second memory (32) in which are stored second data relative to the numbers of cycles of the clock signal over which some of the ramps extend, and a first circuit (40) configured to read from the first memory the first data relative to a plurality of successive ramps and from the second memory the second data associated with said plurality of successive ramps, and to supply said digital values.

IPC Classes  ?

• H03K 4/08 - Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape

Abstract

A method for fabricating an asymmetric SOT-MRAM memory cell unit, the memory cell unit including a conductor track and a pad, arranged on the conductor track and including at least one first magnetic region with free magnetization. The method further includes producing a stack of a plurality of extended layers, including at least one first extended magnetic layer; depositing a mask on an upper surface of the stack; and defining the first magnetic region in the first extended magnetic layer though ion irradiation of the upper surface of the stack carrying the mask, the parameters of the ion irradiation being adapted so as to modify magnetic properties of the material forming the first magnetic layer.

IPC Classes  ?

• H10N 50/01 - Manufacture or treatment
• H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Abstract

A method includes coating of one or more zones of the refractory alloy part, using a treatment composition including one or more types of preceramic polymer, a solvent and one or more active fillers, and heat treating the coated refractory alloy part, the heat treatment allowing to partially convert the preceramic polymer to form a ceramic layer, the active filler forming on a surface of the refractory alloy part, one or more ternary alloys and forming a continuous layer between the surface of the refractory alloy part and the ceramic layer obtained by conversion. The heat treatment forms a continuous layer of the ternary alloy. The treatment composition includes, relative to the total weight of the treatment composition, a weight proportion of between 40% and 66% of the one or more active fillers, and an active filler/preceramic polymer weight ratio is greater than or equal to 2.

IPC Classes  ?

• B22C 9/12 - Treating moulds or cores, e.g. drying, hardening
• B22C 3/00 - Selection of compositions for coating the surfaces of moulds, cores, or patterns
• B22C 9/10 - Cores; Manufacture or installation of cores
• C23C 24/08 - Coating starting from inorganic powder by application of heat or pressure and heat
• C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and

Abstract

Method for producing a metal-semiconductor alloy transistor source and drain comprising, in this order, the following steps: providing on a substrate (100) with an insulating layer (11) and a surface semiconductor layer (12) resting on the insulating layer (11): a transistor gate block (25) on this surface semiconductor layer (12) and insulating spacers (33) on either side of said gate block (25), amorphizing semiconductor regions (123) of said surface semiconductor layer (12) situated on either side of the gate block (25), whilst retaining at least one crystalline semiconductor zone (121) of the surface semiconductor layer (12) opposite the gate block (25), forming selectively with respect to said crystalline zone (121) of the surface semiconductor layer, metal-semiconductor alloy regions (125) in the amorphized semiconductor regions of the surface semiconductor layer (12).

IPC Classes  ?

• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

The invention relates to a facility comprising: - a solar photoelectrochemical reactor (1) comprising: a photoanode (PA) and a photocathode (PC) which are sensitive to solar radiation (RS); first and second walls (P1, P2) which are transparent to solar radiation (RS) and face the photoanode (PA) and the photocathode (PC), respectively; - an optical system arranged outside the solar photoelectrochemical reactor (1) comprising first and second reflectors (R1, R2) designed to reflect, respectively: a first spectral range of incident solar radiation (RS) toward the first wall (P1) and a second spectral range of incident solar radiation (RS), different from the first spectral range, toward the second wall (P2).

IPC Classes  ?

• C25B 1/04 - Hydrogen or oxygen by electrolysis of water
• C25B 1/55 - Photoelectrolysis
• C25B 3/21 - Photoelectrolysis
• C25B 3/26 - Reduction of carbon dioxide
• C25B 9/17 - Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof
• C25B 9/50 - Cells or assemblies of cells comprising photoelectrodes; Assemblies of constructional parts thereof
• C25B 11/052 - Electrodes comprising one or more electrocatalytic coatings on a substrate
• C25B 11/077 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of a single catalytic element or catalytic compound the compound being a non-noble metal oxide
• C25B 11/087 - Photocatalytic compound
• C25B 15/021 - Process control or regulation of heating or cooling

Goods & Services

Artificial intelligence software; Interactive software based on artificial intelligence; Artificial intelligence software for analysis; Application software; Mobile apps; Application software for mobile devices; Data processing equipment; Data processing systems; All the aforesaid goods being for the use or operation of a digital marketplace helping online sellers to trade and monetise their information about customers while protecting their privacy. Data processing, systematisation and management; Collection of data; Business data research, Data processing for businesses, Business data analysis services and Provision of business data; Computerized file management; Database marketing; Interpretation of market research data; Marketing; Consumer response analysis; Analysis of company behaviour; All the aforesaid services being for the use or operation of a digital marketplace helping online sellers to trade and monetise their information about customers while protecting their privacy. Providing online non-downloadable computer software; Rental of application software; Platform as a service [PaaS]; Platforms for artificial intelligence as software as a service [SaaS]; Hosting of databases; Data security services; Development of databases; Development of data programs; Research and development services; All the aforesaid services being for the use or operation of a digital marketplace helping online sellers to trade and monetise their information about customers while protecting their privacy.

Abstract

A method comprises providing a digital image of a reference network, showing a first series of periodic patterns; defining a reference pattern from the patterns of the first series; providing a digital image of the network to be analyzed, showing a second series of periodic patterns; computing a correlation coefficient between each pattern of the second series and the reference pattern; classifying, in a first category, each pattern of the second series with a correlation coefficient, as an absolute value, that is less than a predetermined threshold; extracting a characteristic dimension for each pattern of the second series with a correlation coefficient, as an absolute value, that is greater than the predetermined threshold; computing an arithmetic mean and a standard deviation of the characteristic dimensions extracted in the extracting step; and classifying, in a second category, each pattern of the second series with a characteristic dimension that exhibits a deviation from the arithmetic mean that is greater than the standard deviation.

IPC Classes  ?

• G06V 10/764 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using classification, e.g. of video objects
• G06T 5/40 - Image enhancement or restoration by the use of histogram techniques
• G06V 10/60 - Extraction of image or video features relating to illumination properties, e.g. using a reflectance or lighting model

Abstract

The present invention relates to an aptamer characterized in that it has the ability to distinguish conformers of F-type α-Syn fibres of the α-Syn (α-Syn) protein from conformers of R-type α-Syn fibres, and in that it comprises a sequence specific for modified ribonucleic acid (RNA) having at least 85% identity with a sequence chosen from SEQ ID NO: 1, SEQ ID NO: 2, SEQ ID NO: 3, SEQ ID NO: 4, SEQ ID NO: 5, SEQ ID NO: 6 and SEQ ID NO: 7, preferably chosen from SEQ ID NO: 1 and SEQ ID NO: 2. The present invention also relates to a composition or a kit comprising at least one of these aptamers, and also to the uses thereof in vitro. The present invention also relates to a method for diagnosing synucleinopathies, as well as to a method for stratification, monitoring, prognosis and evaluation of the efficacy of a synucleinopathy treatment, comprising the use of at least one aptamer and/or a composition and/or a kit mentioned above.

IPC Classes  ?

• C12N 15/115 - Aptamers, i.e. nucleic acids binding a target molecule specifically and with high affinity without hybridising therewith
• G01N 33/53 - Immunoassay; Biospecific binding assay; Materials therefor
• G01N 33/68 - Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving proteins, peptides or amino acids

Abstract

yM3M4M5M3M4M5yy with a predetermined orientation.

IPC Classes  ?

• H01F 7/02 - Permanent magnets
• G01R 33/383 - Systems for generation, homogenisation or stabilisation of the main or gradient magnetic field using permanent magnets

Abstract

The invention relates to compounds capable of inducing autophagy and metabolic reprogramming and to the use thereof as cardioprotectors, in particular in the context of anticancer therapy.

IPC Classes  ?

• A61K 31/4174 - Arylalkylimidazoles, e.g. oxymetazolin, naphazoline, miconazole
• A61K 31/15 - Oximes (C=N—O—); Hydrazines (N—N); Hydrazones (N—N=)
• A61K 31/513 - Pyrimidines; Hydrogenated pyrimidines, e.g. trimethoprim having oxo groups directly attached to the heterocyclic ring, e.g. cytosine
• A61P 9/14 - Vasoprotectives; Antihaemorrhoidals; Drugs for varicose therapy; Capillary stabilisers

Abstract

A MEMS resonant sensor adapted to generate a pulse output signal from a signal of interest, the signal of interest being a signal having a frequency oscillating around a carrier frequency, the MEMS sensor comprising at least one processing channel for processing the signal of interest, each processing channel comprising: a demodulation unit for demodulating the signal of interest in order to form a demodulated signal, the demodulation unit comprising a frequency mixer between the signal of interest and a reference signal, the demodulated signal having a low-frequency component and a high-frequency component; a filtration unit for filtering the demodulated signal in order to form a filtered signal, the filtration unit being adapted to allow through the low-frequency component of the demodulated signal; a comparison unit for comparing the filtered signal with a fixed threshold signal in order to form a comparison signal, the comparison signal comprising rising edges and falling edges; a detection unit for detecting rising edges, each rising edge corresponding to a pulse of the output signal.

IPC Classes  ?

• B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
• G01P 15/125 - Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by capacitive pick-up

Abstract

A FET microelectronic device comprising: a semiconductor layer a first area of which forms a channel; a gate and a gate dielectric layer or a ferroelectric memory layer, arranged against the first area; dielectric spacers arranged against sidewalls of the gate; source/drain regions electrically coupled to the first area via second areas of the active layer extending between the source/drain regions and the dielectric spacers; wherein the second areas form a continuous layer with the first area, and the first area forms a semiconductor portion such that the gate covers several distinct faces of the semiconductor portion.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/8234 - MIS technology
• H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
• H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/51 - Insulating materials associated therewith
• H01L 29/66 - Types of semiconductor device
• H10B 51/30 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region

Abstract

The invention relates to a method for controlling the movement, through a space, of an effector via a brain-computer interface, comprising: a) acquiring electrophysiological signals produced in the cortex of an individual, at a measurement time; b) processing the electrophysiological signals, to form input data; c) processing the input data, by means of a predictive model implemented by the brain-computer interface, to define an effector movement (xps) at the measurement time; d) determining a corrected effector movement (xcs+1−xcs), based on the movement (xps) defined by the predictive model in step c); e) moving the effector through the space, by means of the brain-computer interface, based on the corrected movement resulting from step d); f) reiterating steps (a) to (e), the method comprising, in each step d), estimating the target position , at the measurement time. FIG. 2.

IPC Classes  ?

• G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
• B25J 9/16 - Programme controls

Abstract

The present description relates to a device (20) for detecting a magnetic field (Bz) comprising a first tapered acoustic waveguide (40) having a first base (41) and a first tapered end (42), a first electrically conductive wire (50) rigidly coupled to the first tapered end (42), and an electroacoustic transducer (60) rigidly coupled to the first base (41).

IPC Classes  ?

• G01R 33/038 - Measuring direction or magnitude of magnetic fields or magnetic flux using permanent magnets, e.g. balances, torsion devices
• G01H 11/08 - Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means using piezoelectric devices
• G01R 33/028 - Electrodynamic magnetometers

Abstract

A solid-state microbattery, including a substrate; a lithium-cobalt-oxide layer forming a cathode having first and second opposite surfaces; a lithium-based solid-state electrolyte formed on the first surface of the cathode; the second surface of the cathode is oriented towards the substrate; an anode formed on the solid-state electrolyte; noteworthy in that the lithium-cobalt-oxide layer possesses a grain size that increases from the first surface to the second surface.

IPC Classes  ?

• H01M 4/525 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
• H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
• H01M 10/0562 - Solid materials
• H01M 10/0585 - Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators

Abstract

The present disclosure relates to a neural network comprising a first synapse circuit (106) configured to apply a first time delay to a first input signal (READ1) using a first resistive memory element (108) and to generate a first output signal at an output of the first synapse circuit by applying a first weight to the delayed first input signal; and a second synapse circuit (106) configured to apply a second time delay, different to the first time delay, to the first input signal, or to a second input signal (READN), using a second resistive memory element (108) and to generate a second output signal at an output of the second synapse circuit by applying a second weight to the delayed second input signal.

IPC Classes  ?

• G06N 3/063 - Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means

Abstract

A method for manufacturing a power electronic device including the following successive steps: a) providing a silicon semiconductor substrate, the substrate having a front face and a rear face, opposite the front face; b) forming, by epitaxial growth from the front face of the substrate, a first continuous layer of at least one nitrided transition metal coating the front face of the substrate; and c) forming, on the first layer, by epitaxial growth from the front face of the substrate, at least one second layer of a III-V material, preferably III-N.

IPC Classes  ?

• H01L 29/861 - Diodes
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

Abstract

A resistive memory device including at least one first electrode based on a first metal and a second electrode based on a second metal, and a memory element in the form of a metal filament based on a third metal and inserted between the first and second electrodes, the memory element having a filament cross-section strictly smaller than the electrode cross-sections, wherein the third metal has a chemical composition, different from those of the first and second metals giving it an etching speed greater than those of the first and second metals, preferably such that the selectivity at the etching is greater than or equal to 3:1, vis-á-vis the first and second metals. A method for manufacturing such a device is also disclosed.

IPC Classes  ?

• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 70/20 - Multistable switching devices, e.g. memristors

Abstract

A method for preparing a microelectronic component includes cleaning of the surface of an exposed layer with a basis of a III-V material by a cyclic plasma treatment, each cycle comprising a purge phase and a plasma treatment phase. During the formation of the plasma, a bias voltage is applied to the substrate. The method further includes depositing, on the cleaned surface, a subsequent layer. The method provides an optimal cleaning of the exposed layer while minimising, and preferably avoiding degradation of the structure. The preparation method thus makes it possible to improve the quality of the interface between the layer with a basis of a III-V material and the subsequent layer. The electrical properties of the component are consequently improved.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

The invention relates to a daytime radiative cooling device comprising a reflective portion consisting of an alternating stack of layers A and layers B, said layers A consisting of at least one material A selected from among Nb2O5, TiO2 and Ta2O5 and said layers B consisting of at least one material B selected from among SiO2 and Al2O3. The invention also relates to a method for determining the reflective portion of a daytime radiative cooling device. Finally, the invention relates to a method for determining the emitting portion of a daytime radiative cooling device.

IPC Classes  ?

• G02B 5/20 - Filters
• C03C 17/34 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
• C23C 14/08 - Oxides
• C23C 14/10 - Glass or silica
• C23C 14/35 - Sputtering by application of a magnetic field, e.g. magnetron sputtering
• C23C 14/54 - Controlling or regulating the coating process
• C23C 14/58 - After-treatment

Abstract

A synthesis process of a liquid organic hydrogen carrier charged with hydrogen, Hn-LOHC, wherein a methanisation digestate is used as a hydrogen source, including at least the steps of: a) production of gaseous ammonia from the methanisation digestate; b) division of the gaseous ammonia produced in step a) into a first and a second flow; c) catalytic amination of a liquid organic hydrogen carrier not charged with hydrogen, H0-LOHC, by reaction with the gaseous ammonia from the first flow to convert the H0-LOHC into an aminated H0-LOHC and produce hydrogen; d) catalytic dissociation of gaseous ammonia from the second flow to produce hydrogen; and e) catalytic hydrogenation of the aminated H0-LOHC obtained in step c), by reacting with the hydrogen produced in steps c) and d), whereby the Hn-LOHC is obtained.

IPC Classes  ?

• C01B 3/00 - Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
• C01B 3/04 - Production of hydrogen or of gaseous mixtures containing hydrogen by decomposition of inorganic compounds, e.g. ammonia

Abstract

An anti-biofouling system for attaching to a device which comprises a fouling-sensitive element and which is configured to be immersed in a liquid and at least partially cover the fouling-sensitive element. The anti-biofouling system comprises a plate which extends in a plane XY and has two opposite main faces, one of which is intended to be in contact with the liquid. The anti-biofouling system also includes at least one actuator located on one of the main faces of the plate and able to deform the plate off its plane. The plate has a nano-texture over all or part of the face intended to be in contact with the liquid. The nano-texture is formed by a plurality of elements raised with respect to a surface of the plate, each raised element having at least two dimensions of 1 nm to 1,000 nm. On at least one area of the nano-textured face the raised elements are spaced apart from one another by a distance of 1 nm to 1,000 nm.

IPC Classes  ?

• B08B 17/06 - Preventing deposition of fouling or of dust by giving articles subject to fouling a special shape for arrangement
• B08B 7/02 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
• B82Y 15/00 - Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• G01N 17/00 - Investigating resistance of materials to the weather, to corrosion or to light

Abstract

A device for detecting infrared radiation, includes at least one pixel having an axis in a direction Z, the pixel comprising a first absorbent planar structure comprising at least one semiconductor layer. The composition of the materials used to produce the at least one layer of the first absorbent planar structure is chosen such that: the first absorbent planar structure has an effective valence band formed by a plurality of energy levels. Each energy level is occupied by one of: a first type of positive charge carrier, called heavy holes, having a first effective mass; or a second type of positive charge carrier, called light holes, having a second effective mass strictly less than the first effective mass. The maximum energy level of the effective valence band is occupied by light holes along the axis of the pixel.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions

Abstract

A data storage circuit includes a first memory array comprising a plurality of FeRAM memory units; a second memory array comprising a plurality of OxRAM memory units; each of the first and second memory arrays comprising: a plurality of word lines, a plurality of source lines and a plurality of bit lines; for each column each memory unit comprising: a memory cell having a first electrode and a second electrode connected to the source line associated to the memory unit; a selection transistor having a gate connected to the word line associated to the memory unit and placed in series with the memory cell between the source line and a bit line associated to of the memory unit; the data storage circuit comprising further: a data transfer stage configured to transfer data from a set of source FeRAM memory units having a common bit line to a target OxRAM unit by converting a read signal from the common bit line to a transfer voltage applied on a target line of the target OxRAM unit; the target line corresponding to the word line or the source line and having the same direction as the common bit line.

IPC Classes  ?

• G11C 11/22 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Abstract

The present disclosure relates to an electronic circuit implementing a neural network, the electronic circuit comprising: an array of processing elements (PE) implementing one or more neurons of the neural network, each processing element comprising a data processing circuit, and a local memory configured to store neuron data; and data propagation circuitry configured to perform forward or reverse lateral mixing of the neuron data by propagating, synchronously by each processing element, the neuron data to the local memory of each processing element from the local memory of one or more neighboring processing elements, wherein each of the processing elements is configured to process, during a first processing iteration, the neuron data from the one or more neighboring processing elements in order to generate updated neuron data and to store the updated neuron data in the local memory for use during a subsequent processing iteration.

IPC Classes  ?

• G06N 3/04 - Architecture, e.g. interconnection topology

Abstract

A photovoltaic device comprising an assembly of several strings of photovoltaic cells, each of the strings being formed by a plurality of cells aligned in a first direction y, the strings being aligned in a second direction x forming a non-zero angle with the first direction and typically orthogonal or substantially orthogonal to the first direction, the assembly of cells including a first string laterally overlapped by a second chain of the plurality of strings, so that a peripheral portion of the second string covers a peripheral portion of the first string, the first string and the second string being electrically insulated via an insulating region interposed between the respective peripheral portions of the first string and of the second string.

IPC Classes  ?

• H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A method for fabricating an optoelectronic component includes at least one photodiode, the steps of the method making it possible to move the electric carrier collection field to the layer least sensitive to radiation, thus reducing the influence of irradiation on the dark current.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

Device (1) for projecting an image onto an eye (O), comprising: a light emitter, along various emission axes; an optical combiner (30), configured to form, from each light wave, a collimated light wave; the device being such that: the light emitter comprises a directional screen (10), comprising various pixels (10i), configured to emit a divergent light wave along a predefined emission axis; the combiner has an object focal plane; the directional screen is placed in the object focal plane of the combiner; the optical combiner is configured to receive each light wave emitted by a pixel and to form a collimated light wave that propagates towards a central position (C3); the respective emission axes of various pixels of the directional screen converge to the same target point, downstream of the combiner; FIG. 2A

IPC Classes  ?

• G02B 27/01 - Head-up displays
• G02F 1/29 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection

Abstract

An electromechanical system includes a frame; a movable element; a capacitive measurement or actuation system including a movable electrode and at least one fixed electrode, referred to as a counter-electrode, the movable electrode including a membrane and a membrane rigidifying structure; a device for transmitting movement between the movable element and the movable electrode, the transmission device being rotatably movable relative to the frame by a plurality of pivot hinges; and an elastic device connected to the movable electrode and configured to generate an elastic force which opposes movement of the movable electrode; the rigidifying structure of the movable electrode being secured to the transmission device and anchored to the transmission device at at least one part of the pivot hinges.

IPC Classes  ?

• H04R 19/04 - Microphones
• H04R 19/02 - Loudspeakers

Abstract

An electromechanical system includes a frame; a movable element; a capacitive measurement or actuation system including a first movable electrode and at least one electrode separated from the first movable electrode by a first dielectric medium; a first transmission device for transmitting movement between the movable element and the first movable electrode, the first transmission device being rotatably movable relative to the frame by a plurality of first pivot hinges; the first transmission device including a first transmission shaft having a first longitudinal axis of rotation; and a plurality of first transmission arms, each of the first transmission arms including a first end coupled to the movable element and a second end secured to the first transmission shaft; the first movable electrode being connected to the first transmission shaft.

IPC Classes  ?

• H04R 19/04 - Microphones
• H04R 19/02 - Loudspeakers

Abstract

A phased-array optoelectronic emitter includes a laser chip containing a flared laser source and a photonic chip containing phase shifters and elementary transmitters placed in N arms. The photonic chip includes a coupler that ensures optical coupling between the flared laser source and the arms, the coupler having a collection input placed facing the emission surface of the flared laser source and a transmission output comprising N rectilinear waveguides that are coupled to the N arms of the optoelectronic emitter and that are oriented so that their longitudinal axes are secant at a position located in a flared section of the laser source on an optical axis of the laser source.

IPC Classes  ?

• G02F 1/295 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection in an optical waveguide structure
• G01S 7/481 - Constructional features, e.g. arrangements of optical elements

Abstract

The invention relates to a method for coating a textile material, said method comprising the following steps: a) at least one cycle of impregnating the textile material with a sol-gel adhesion formulation, said sol-gel adhesion formulation being free of polycarboxylic acid; b) at least one cycle of drying the impregnated textile material obtained in step a); c) at least one cycle of impregnating the dried textile material obtained in step b) with an omniphobic or hydrophobic sol-gel formulation comprising sulphamic acid, said omniphobic or hydrophobic sol-gel formulation being different from the sol-gel adhesion formulation; d) at least one cycle of drying the impregnated textile material obtained in step c).

IPC Classes  ?

• D06M 13/507 - Organic silicon compounds without carbon-silicon bond
• D06M 13/525 - Embossing; Calendering; Pressing

Abstract

The invention relates to a device for sending vibrational waves to one or more muscles of the body, which device comprises: - at least one actuator (3), the one or more actuators (3) being arranged to transmit vibrational waves to the muscles, - at least one sensor (5) for measuring the vibrational waves once they have propagated through the one or more muscles, and - an electronic control system (10) for controlling the one or more actuators in order (a) to send low-frequency vibrational waves to the one or more muscles using the one or more actuators (3), the sent vibrational waves having a first signal covering a plurality of frequencies between 0 and 400 Hz, (b) to send higher-frequency vibrational waves to the one or more muscles using the one or more actuators (3), the sent vibrational waves comprising a second signal at a frequency greater than or equal to 4 kHz, in particular between 20 and 60 kHz.

IPC Classes  ?

• A61H 23/02 - Percussion or vibration massage, e.g. using supersonic vibration; Suction-vibration massage; Massage with moving diaphragms with electric or magnetic drive
• A61B 5/00 - Measuring for diagnostic purposes ; Identification of persons

Abstract

Disclosed is a device (1) for controlling the movement of a mechanical part (30), comprising: - a first resonator (101) that is in contact with the part; - a support (20) positioned so as to be in contact with the part, the part thus being held between the support and the first resonator; - a control unit (40) configured to activate the resonator, the resonator being configured to cause the part to vibrate in an in-plane vibration mode when activated; - such that the activation of the resonator reduces friction between the resonator (101) and the part in order to facilitate the movement of the part between the resonator and the support.

IPC Classes  ?

• G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
• G05G 5/00 - Means for preventing, limiting or returning the movements of parts of a control mechanism, e.g. locking controlling member
• G06F 3/0354 - Pointing devices displaced or positioned by the user; Accessories therefor with detection of 2D relative movements between the device, or an operating part thereof, and a plane or surface, e.g. 2D mice, trackballs, pens or pucks
• G06F 3/0362 - Pointing devices displaced or positioned by the user; Accessories therefor with detection of 1D translations or rotations of an operating part of the device, e.g. scroll wheels, sliders, knobs, rollers or belts

Abstract

The invention relates to a method for using an automotive road vehicle network comprising an operation of hitching a hitchable articulated vehicle, which method comprises the steps of: a– driving the vehicle onto the parking structure (12); b– positioning the chassis front section (7) and the chassis rear section (8) of the vehicle (1) at a height greater than or equal to the unloaded height and less than the maximum height; c– aligning the chassis front section (7) and the chassis rear section (8) of the vehicle by the parking structure (12); d– hitching the vehicle to another hitchable articulated vehicle arranged on the parking structure (12).

IPC Classes  ?

• B62D 53/00 - Tractor-trailer combinations; Road trains
• E04H 6/10 - Garages for many vehicles without mechanical means for shifting or lifting vehicles, e.g. with helically-arranged fixed ramps, with movable ramps
• B62D 21/18 - Understructures, i.e. chassis frame on which a vehicle body may be mounted characterised by the vehicle type and not provided for in groups
• B62D 31/00 - Superstructures for passenger vehicles
• B62D 53/02 - Tractor-trailer combinations; Road trains comprising a uniaxle tractor unit and a uniaxle trailer unit
• B62D 47/00 - Motor vehicles or trailers predominantly for carrying passengers

Abstract

Disclosed is a method for estimating the 14C activity of an object, using a detector configured to form pulses under the effect of exposure to β particles, the detector being connected to a spectrometric circuit configured to establish a spectrum, the spectrum corresponding to a histogram of the amplitude of pulses detected during a measurement period, said method comprising: a) placing the detector facing the object and acquiring a measurement spectrum; b) interposing a screen between the detector and the object and acquiring a background spectrum; c) correcting the measurement spectrum, using the background spectrum; d) on the basis of the corrected spectrum, determining a first spectral value in a first energy band; e) optionally correcting the first spectral value; f) applying a transfer function to the spectral value so as to estimate the 14C activity of the object.

IPC Classes  ?

• G01T 1/167 - Measuring radioactive content of objects, e.g. contamination
• G01T 1/36 - Measuring spectral distribution of X-rays or of nuclear radiation
• G21D 1/00 - NUCLEAR POWER PLANT - Details of nuclear power plant

Abstract

The present invention relates to a client-server system implementing a client, a calculation server and a service provider delegating, to the calculation server, an operation to be performed in the homomorphic domain on confidential data from the client. The system can be protected from possible collusions of a first type between the calculation server and the service provider by virtue of an HSMSP module with which the latter is provided. The HSMSP module contains the homomorphic cryptosystem of the service provider and is suitable for decrypting, for the service provider, the result of an operation performed by the calculation server. The system can be protected from possible collusions of a second type between the calculation server and the client by virtue of an HSMCL module with which the latter is provided. The HSMCL module contains the homomorphic cryptosystem of the client and is suitable for decrypting, for the client, the result of an operation performed by the calculation server.

IPC Classes  ?

• H04L 9/00 - Arrangements for secret or secure communications; Network security protocols

Abstract

The invention relates to a process for manufacturing a multilayer structure, comprising the following steps: - providing a carrier substrate (40) comprising a carrier layer (41) and a porous silicon layer (42); - providing a donor substrate (50) comprising a buried fragile plane (50B) and a surface layer (51); - assembling (S3) the carrier substrate (40) and the donor substrate (50) by bonding, the surface layer (51) of the donor substrate being placed in contact with the carrier substrate; - separating the surface layer (51) from the donor substrate (50) via fracture along the buried fragile plane (50B); at least one of the carrier and donor substrates (40, 50), called the degraded substrate, comprises a degraded portion (60) so as to prevent it from bonding to the other of the carrier and donor substrates (50, 40) in the assembly step, the degraded portion (60) having an annular or substantially annular shape and being located less than 25 mm from the edge of said degraded substrate.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
• H01L 21/762 - Dielectric regions

Goods & Services

Unworked and semi-worked metals and their alloys used in the nuclear energy industries; materials, vessels and containers of metal for packaging, transport, storage, warehousing, handling of radioactive products, or other chemical or nuclear products; metal construction materials and transportable buildings of metal for nuclear power plants and reactors. Machines for handling nuclear fuels; industrial robots; machine tools used in the nuclear energy industry; machines, machine tools, industrial or remote-controlled robots for conducting measurements, inspections, sampling or analyses, for collecting, processing, recycling nuclear materials. Materials and equipment for recording, monitoring, analyzing, communicating, measuring, checking, controlling, conducting and supervising industrial installations, equipment and automated processes for industry in the nuclear energy fields; computer interfaces; IT programs, computer programs, software, firmware, alarms, used in the field of energy; video cameras for monitoring and inspecting equipment in a nuclear power station; robots for monitoring, measurement, collection, sampling or inspection in a contaminated environment. Nuclear reactors; nuclear reactor vessels; nuclear generators; installations for nuclear power plants; apparatus for heating, steam generating, heat exchange, heat and steam accumulation, heat and steam regulation, refrigeration, drying and ventilation intended for use in nuclear power stations and reactors; decentralized power generation stations, namely, nuclear power plant installations; power generating apparatus using nuclear materials. Construction of nuclear reactors; advice on the construction of nuclear reactors; construction of nuclear power plants; construction, installation and maintenance of infrastructures, factories, installations, equipment and apparatus in the fields of nuclear energy; construction, installation and maintenance of nuclear power plants, nuclear reactors, research and engineering facilities and equipment in the fields of nuclear energy; construction, installation and maintenance of facilities and equipment used for transporting materials in the field of nuclear energy; inspection of construction sites, construction works supervision, information with respect to construction in the fields of nuclear energy. Processing of nuclear fuel cycle materials; producing energy in nuclear power plants; converting, processing, reprocessing and transforming nuclear materials, nuclear fuels, materials used in the field of nuclear energy; assembling of materials commissioned by others. Engineering, engineering works, scientific or technological project management in the fields of energy and nuclear reactors; research, development, analysis, study and design works in the fields of energy and nuclear reactors; scientific, technological and industrial research, design services in the field of energy and nuclear reactors; nuclear engineering services; design, programming, updating, maintenance and rental of software applied to the fields of energy and nuclear reactors; analysis, design, production and management of information and computer technology systems; technical consultations and construction plan drafting in the fields of energy and nuclear reactors; nuclear reactor monitoring and inspection services.

Abstract

Method for observing an emission of fluorescence light or luminescence light from a moving particle in a sample, in a spectral emission band, the method comprising: a) forming a detection image of the sample in a spectral detection band, the spectral detection band being different from the spectral emission band; b) forming an emission image of the sample in the spectral emission band; the method being such that: steps a) and b) are reiterated; the method comprising: c) on the basis of each detection image resulting from step a) of each iteration of steps a) and b), detecting the particle and determining a region of interest around the particle; d) on the basis of the region of interest resulting from each step c), extracting a region of interest from each emission image of the sample.

IPC Classes  ?

• G01N 15/149 - specially adapted for sorting particles, e.g. by their size or optical properties
• G01N 15/01 - specially adapted for biological cells, e.g. blood cells (investigating sedimentation of particle suspensions in blood G01N 15/05)
• G01N 15/10 - Investigating individual particles
• G01N 15/1433 - using image recognition
• G01N 15/1434 - Optical arrangements

Abstract

Device (1) for observing a sample, comprising a light source (10); an image sensor (35), comprising several pixels (36); a microlens array (30), comprising several convergent microlenses (31), each microlens being disposed facing a pixel, each microlens comprising an image focus, each microlens being configured to form, from light waves being propagated in parallel incidence, a light wave beam (13) converging towards the image focus of said microlens; the device being configured to hold the sample (20) between the light source and the matrix of microlenses; the device being characterized in that it comprises several attenuating elements (32, 32′), each attenuating element being associated with a microlens and with a pixel, each attenuating element being configured to attenuate the light waves converging towards the image focus of the lens with which it is associated.

IPC Classes  ?

• G01N 21/35 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
• H04N 23/55 - Optical parts specially adapted for electronic image sensors; Mounting thereof

Abstract

The invention relates to a device for projecting an image onto an eye, the device comprising: a light emitter, configured to emit light waves along various respective emission axes; an optical combiner, optically coupled to the light emitter, and configured to form, from each light wave emitted by the light emitter, a collimated light wave that propagates to the pupil of the eye; the device being characterized in that: the light emitter comprises a screen, comprising various pixels, each pixel being configured to emit a divergent light wave that propagates around an emission axis, the various pixels emitting respective divergent light waves that propagate along various emission axes, respectively; the optical combiner is configured to receive each light wave emitted by a pixel and to form a collimated light wave that propagates towards a central position corresponding to the centre of the pupil of the eye.

IPC Classes  ?

• G02B 27/01 - Head-up displays
• G09G 3/00 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes

Abstract

A quantum electronic device comprising: a substrate coated with at least one semiconductor block, insulation zones on either side of the semiconductor block, front gate electrodes on regions of the semiconductor block each forming a quantum dot, one or more exchange electrodes arranged around and at a distance from the semiconductor block, at least one first exchange electrode among the exchange electrodes being provided so as to allow to modulate a tunnel barrier between a first quantum dot and a second quantum dot, this first exchange electrode being formed by a first conductive pad passing through an insulating layer covering the semiconductor block, the insulation zones and the gate electrodes, the first conductive pad having a “lower” end disposed in contact with the first insulation zone.

IPC Classes  ?

• H01L 29/66 - Types of semiconductor device
• G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/775 - Field-effect transistors with one-dimensional charge carrier gas channel, e.g. quantum wire FET

Abstract

The invention relates to a method for the direct hybrid bonding of chip (10) to sheet (20), comprising the following steps: Providing at least one chip (10) comprising a first copper pad (11) and a first layer (12) of silicon oxide, Providing a sheet (20) comprising a second copper pad (21) and a second layer (22) of silicon oxide, Manipulating the chip (10) so as to position the face (100) of the chip (10) facing the area (210) for receiving the chip on the sheet (20), aligning the first and second pads (11, 21), Depositing at least one water drop (30) in the area (210) for receiving the chip and/or on the face (100) of the chip (10), Applying pressure to the chip (10) to form, from the water drop (30), a water film (31) between the face (100) and the area (210) for receiving the chip (10).

IPC Classes  ?

• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
• H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,

Abstract

One aspect of the invention relates to a method for transferring a semiconductor layer (40) from a donor substrate (10) to a receiver substrate (20), the method comprising the following successive steps: - first implantation (S120) of first light ions (3a) into the donor substrate (10) at a predetermined implantation depth (30) so as to form therein a buried fragile plane (300), - epitaxy (S130) on the donor substrate (10) of the semiconductor layer (40) to be transferred, - second implantation (S140) of second light ions (3b) into the donor substrate (10) through the semiconductor layer (40) to be transferred level with the fragile plane (300), - assembly (S150) by bonding of the receiver substrate (20) and of the donor substrate (10) covered with the semiconductor layer (40) to be transferred, the semiconductor layer (40) to be transferred being placed between the receiver substrate (20) and donor substrate (10), and - fracturing (S160) by annealing, referred to as the fracturing annealing (S160), the donor substrate (10) along the buried fragile plane (300), the first ions (3a) being chosen and implanted with a first dose (D1) so that, during the epitaxy (S130), there is no fracturing at the predetermined implantation depth (30), and the second ions (3b) being chosen and implanted with a second dose (D2) such that, during the fracturing annealing (S160), the donor substrate (10) fractures.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

Disclosed is a method for estimating the uranium, or uranium-238, activity of an object, using a spectrometric detector configured to establish a spectrum corresponding to a histogram of the amplitude of pulses detected during a measurement period, said method comprising: a) placing the detector facing the object and acquiring a measurement spectrum, the spectrum being representative of an energy distribution of β particles emitted by descendants of 238U; b) on the basis of the measurement spectrum, optionally forming a corrected spectrum; c) on the basis of the measurement spectrum or of the corrected spectrum, determining a first spectral value in a first energy band extending from a minimum energy, the minimum energy being greater than or equal to 300 keV; d) applying a transfer function to the spectral value determined in step c), so as to estimate the uranium or 238U activity of the object.

IPC Classes  ?

• G01T 1/167 - Measuring radioactive content of objects, e.g. contamination
• G01T 1/36 - Measuring spectral distribution of X-rays or of nuclear radiation
• G21D 1/00 - NUCLEAR POWER PLANT - Details of nuclear power plant

Abstract

The invention relates to a hitchable road vehicle comprising: - a front wheel set (18) and a rear wheel set (19) mounted on a chassis centre section (1); - a counter-rotating indexing device (22); - a front steering coupler (23) and a rear steering coupler (24); - an articulation device (7); - a front joining platform (9) extending above the front wheels (18), and a rear joining platform (6) extending above the rear wheels (19), a hitch being attached to one of these joining platforms (6) and the articulation device (7) being mounted on the other of these joining platforms (9) so that the articulation pin (10) is located between two parallel planes that are normal to a running plane of the vehicle and tangential on either side of the corresponding wheel set.

IPC Classes  ?

• B60D 1/48 - Traction couplings; Hitches; Draw-gear; Towing devices characterised by the mounting
• B60D 1/00 - Traction couplings; Hitches; Draw-gear; Towing devices

Abstract

An electrical device for generating a test pulse, includes at least one voltage generator configured for generating an input voltage pulse in a first phase; for each generator, a coil transformer for amplifying the input voltage pulse; a rectifier diode; a target circuit comprising at least one target complex impedance and a capacitive element, the target circuit having a first electrode connected to the cathode of the rectifier diode and a second electrode; a trigger circuit configured for triggering a second phase by discharging the capacitive element through the target circuit so as to apply the test pulse to the target complex impedance.

IPC Classes  ?

• H03K 5/02 - Shaping pulses by amplifying

Abstract

A continuous-wave lidar system includes a laser source configured to generate laser radiation (L) with a laser optical frequency fopt-I varying linearly over a plurality of N successive frequency ranges indexed i, a first optical device configured to spatially separate the laser radiation (L), a detecting device, a second optical device configured to simultaneously deliver, to the pixel, a recombined beam, a frequency shifter placed on the path of the reference beam and configured to shift the laser optical frequency by a shift frequency comprised in the interval [fRmax, fRmin], a processing unit, the continuous-wave lidar imaging system further being configured to determine distance information from a signal detected by the pixel.

IPC Classes  ?

• G01S 7/4912 - Receivers
• G01S 17/34 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated using transmission of continuous, frequency-modulated waves while heterodyning the received signal, or a signal derived therefrom, with a locally-generated signal related to the contemporaneously transmitted signal
• G01S 17/89 - Lidar systems, specially adapted for specific applications for mapping or imaging

Abstract

A method for metallizing the inner face of a tube made of a ceramic or a ceramic matrix composite, including at least a step of plating a metallic tube on the inner face of the ceramic or ceramic matrix composite tube, and wherein the plating comprises a creep of the metallic tube by applying to this tube an internal pressure and a heating, the creep resulting in an increase in the outer diameter of the metallic tube until the outer face of the metallic tube presses against the inner face of the ceramic or ceramic matrix composite tube. A method for manufacturing a tubular nuclear fuel cladding implementing the metallization method.

IPC Classes  ?

• C04B 41/51 - Metallising
• C04B 35/565 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbides based on silicon carbide
• C04B 35/80 - Fibres, filaments, whiskers, platelets, or the like

Abstract

A material stack, a microelectronic device that integrates the stack, and a method for obtaining the stack. The material stack for microelectronic device includes a substrate, a first undoped crystalline layer on the substrate, the undoped crystalline layer having a thickness superior to 4 nm, and a Si-doped crystalline chalcogenide layer on the undoped crystalline layer, the Si-doped crystalline chalcogenide layer being doped with less than 20 at. %, and preferably less than 12 at. %, of Si. The provided material stack shows a satisfying stability contributing to retard the stack possible reorganization (i.e., intermixing) that could happen during the manufacturing of the material stack and during the subsequent manufacturing of said microelectronic device.

IPC Classes  ?

• H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
• H10B 63/10 - Phase change RAM [PCRAM, PRAM] devices

Abstract

A microelectronic device comprising: a semiconductor layer (120) several first areas (122) of which are superposed and form a channel; an electrostatic control gate (110) and a gate dielectric layer (112) or a ferroelectric memory layer (112) parts of which are each arranged between a part (106, 108) of the gate and one amongst the first areas; dielectric spacers (114) arranged against sidewalls of the gate; source (116)/drain (118) regions electrically coupled to the first areas by second areas (124) of the semiconductor layer extending between the source/drain regions and the spacers, and/or between a substrate (102) and each of the source/drain regions; and wherein the second areas are not arranged directly against the layer and form a continuous layer with the first areas.

IPC Classes  ?

• H01L 29/775 - Field-effect transistors with one-dimensional charge carrier gas channel, e.g. quantum wire FET
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/51 - Insulating materials associated therewith
• H01L 29/66 - Types of semiconductor device
• H01L 29/786 - Thin-film transistors

Abstract

Method for characterizing biological particles of a sample, the characterization aiming to determine a property of each particle, the method comprising: a) measuring a characteristic of at least one particle of the sample; b) processing the characteristic of the or each particle using an artificial intelligence algorithm; c) based on the processing, characterizing the particles of the sample, so as to assign a class to each particle, each class being representative of the property of the particle; the method being characterized in that the artificial intelligence algorithm has been trained beforehand by learning from labels, based on training samples, each training sample being assigned a proportion of cells in each class, such that the training is performed on the basis of the proportions respectively assigned to each training sample.

IPC Classes  ?

• G01N 15/1433 - using image recognition
• G06V 20/69 - Microscopic objects, e.g. biological cells or cellular parts

Abstract

Method for determining a variation of absorption properties of an object (20), between a first instant (t1) and a second instant (t2), the object comprising a surface layer (L1) and a deep layer (L2), the method comprising: a) illumination of the object by a light source (10), emitting an illumination beam (11) forming a zone (12) on the surface of the object; b) detection of photons backscattered by the object, the detected backscattered photons emanating from a detection zone (141, 142, 143), the detection zone being situated at a detection distance from the illumination zone, the detection distance being chosen from among, in ascending order: a first detection distance (d1), forming a first detection zone; a second detection distance (d2), forming a second detection zone; a third detection distance (d3), forming a third detection zone.

IPC Classes  ?

• G01N 21/47 - Scattering, i.e. diffuse reflection

Abstract

An electronic control device controls an energy converter delivering a total output voltage and/or an output current from a plurality of elementary DC input voltages, each coming from a respective source of energy. The converter has a number of conversion modules, each receiving an elementary DC input voltage from a respective source and delivering an elementary output voltage. The conversion modules are connected in series by the outputs thereof and the total output voltage is equal to the sum of the elementary output voltages. Each conversion module includes a number of switches for converting the elementary DC input voltage into the respective elementary output voltage. The control device has a number of elementary controllers and a main controller connected to the elementary controllers. Each elementary controller is associated with a respective conversion module and controls the switches of the module.

IPC Classes  ?

• H02M 1/00 - APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF - Details of apparatus for conversion
• H02J 3/38 - Arrangements for parallelly feeding a single network by two or more generators, converters or transformers
• H02M 7/493 - Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode the static converters being arranged for operation in parallel