Some embodiments include apparatuses and electrical models associated with the apparatus. One of the apparatuses includes a power control unit to monitor a power state of the apparatus for entry into a standby mode. The apparatus can include a two-level memory (2LM) hardware accelerator to, responsive to a notification from the power control unit of entry into the standby mode, flush dynamic random access memory (DRAM) content from a first memory part to a second memory part. The apparatus can include processing circuitry to determine memory utilization and move memory from a first memory portion to a second memory portion responsive to memory utilization exceeding a threshold. Other methods systems and apparatuses are described.
G06F 12/0804 - Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
G06F 1/28 - Supervision thereof, e.g. detecting power-supply failure by out of limits supervision
G06F 1/3206 - Monitoring of events, devices or parameters that trigger a change in power modality
G06F 1/3287 - Power saving characterised by the action undertaken by switching off individual functional units in the computer system
Emulating floating point calculation using lower precision format calculations is described. An example of a processor includes a floating point unit (FPU) to provide a native floating point operation in a first precision format; and systolic array hardware including multiple data processing units, wherein the processor is to receive data for performance of a matrix multiplication operation in the first precision format; enable an emulated floating point multiplication operation using one or more values with a second precision format, the second precision format having a lower precision than the first precision format, the emulated floating point multiplication including operation of the systolic array hardware; and generate an emulated result for the matrix multiplication operation.
G06F 7/544 - Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using unspecified devices for evaluating functions by calculation
G06F 15/80 - Architectures of general purpose stored program computers comprising an array of processing units with common control, e.g. single instruction multiple data processors
3.
MAGNETOELECTRIC SPIN-ORBIT LOGIC DEVICE WITH A TOPOLOGICAL INSULATOR SUPERLATTICE
In one embodiment, an apparatus includes a magnet, a first structure, and a second structure. The first structure includes a first conductive trace and a magnetoelectric material. The first conductive trace is coupled to an input voltage terminal, and the magnetoelectric material is coupled to the first conductive trace and the magnet. The second structure includes a superlattice structure and a second conductive trace. The superlattice structure includes one or more topological insulator materials. Moreover, the superlattice structure is coupled to the magnet and the second conductive trace, and the second conductive trace is coupled to an output voltage terminal.
H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
H01L 43/12 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 43/02 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details
4.
Time encoded data communication protocol, apparatus and method for generating and receiving a data signal
An apparatus for generating a data signal comprises a processing circuit configured to generate the data signal, the data signal comprising a sequence of a first signal edge of a first type, a second signal edge of a second type, and a third signal edge of the first type, the first signal edge and the second signal edge being separated by a first time period corresponding to first data to be transmitted, and the second signal edge and the third signal edge being separated by a second time period corresponding to second data to be transmitted. An output interface circuit is configured to output the data signal.
H04L 7/033 - Speed or phase control by the received code signals, the signals containing no special synchronisation information using the transitions of the received signal to control the phase of the synchronising-signal- generating means, e.g. using a phase-locked loop
5.
GLASS SUBSTRATE EMBEDDED PIC TO PIC AND OFF-CHIP PHOTONIC COMMUNICATIONS
Embodiments disclosed herein include electronic packages and methods of forming such electronic packages. In an embodiment, an electronic package comprises a first layer, where the first layer comprises glass. In an embodiment, a second layer is over the first layer, where the second layer comprises a mold material. In an embodiment, a first photonics integrated circuit (PIC) is within the second layer. In an embodiment, a second PIC is within the second layer, and a waveguide is in the first layer. In an embodiment, the waveguide optically couples the first PIC to the second PIC.
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
Techniques and mechanisms for determining calibration information based on tuning of a ring oscillator circuit formed with two integrated circuit (IC) dies. In an embodiment, an oscillator circuit comprises an in-series arrangement of delay circuits including a first one or more delay circuits of a first die, and a second one or more delay circuits of a second die. Respective circuitry of the first die and the second die performs tuning to match an oscillation frequency of the oscillator circuit with a reference frequency. An operational setting of the tuned oscillator circuit is provided to calibrate transmitter circuitry of the first die and the second die. In another embodiment, tuning of the oscillator circuit is further based on tuning of a local oscillator circuit of one of the first die or the second die.
Techniques for an on-memory die voltage regulator is disclosed. In the illustrative embodiment, a voltage regulator on a memory die is enabled upon receipt of a memory operation. The illustrative voltage regulator includes an analog controller that controls a shunt current based on a current output voltage of the voltage regulator. The illustrative voltage regulator also includes a digital controller that controls several switches based on the input voltage that control an effective resistance of part of the voltage regulator.
G05F 1/56 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
G06F 1/28 - Supervision thereof, e.g. detecting power-supply failure by out of limits supervision
8.
FIN TRIM PLUG STRUCTURES HAVING AN OXIDATION CATALYST LAYER SURROUNDED BY A RECESSED DIELECTRIC MATERIAL
Fin trim plug structures for imparting channel stress are described. In an example, an integrated circuit structure includes a fin including silicon, the fin having a top and sidewalls. The fin has a trench separating a first fin portion and a second fin portion. A first gate structure including a gate electrode is over the top of and laterally adjacent to the sidewalls of the first fin portion. A second gate structure including a gate electrode is over the top of and laterally adjacent to the sidewalls of the second fin portion. An isolation structure is in the trench of the fin, the isolation structure between the first gate structure and the second gate structure. The isolation structure includes a first dielectric material laterally surrounding a recessed second dielectric material distinct from the first dielectric material, the recessed second dielectric material laterally surrounding an oxidation catalyst layer.
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Embodiments described herein may be related to apparatuses, processes, and techniques for a dam structure on a substrate that is proximate to a die coupled with the substrate, where the dam decreases the risk of die shift during encapsulation material flow over the die during the manufacturing process. The dam structure may fully encircle the die. During encapsulation material flow, the dam structure creates a cavity that moderates the different flow rates of material that otherwise would exert different pressures the sides of the die and cause to die to shift its position on the substrate. Other embodiments may be described and/or claimed.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/22 - Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device liquid at the normal operating temperature of the device
Methods for automatic calibration of a braille interface. In embodiments, a user begins typing braille characters in 2×3 matrix into an interface without an initial calibration step. The implementing system detects the patterns of the keystrokes and determines the orientation and placement of the user's hands by comparing the keystrokes against known braille characters, identifying which row and column of the 2×3 matrix within which each finger is positioned. The interface is then calibrated based on the identified positions of the fingers within the 2×3 matrix. For touch interfaces, the surface area of each finger may also be used to enhance identification of fingers. Other embodiments may be described and/or claimed.
Embodiments disclosed herein include electronic packages and methods of assembling such electronic packages. In an embodiment, an electronic package comprises a core, where the core comprises glass. In an embodiment, a first via is through the core, where the first via directly contacts the core. In an embodiment, a second via is through the core, and a sleeve is around the second via. In an embodiment, the sleeve comprises a material with a thermal conductivity that is greater than a thermal conductivity of the second via.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
12.
GALLIUM NITRIDE (GAN) LAYER TRANSFER FOR INTEGRATED CIRCUIT TECHNOLOGY
Gallium nitride (GaN) layer transfer for integrated circuit technology is described. In an example, an integrated circuit structure includes a substrate including silicon. A first layer including gallium and nitrogen is over a first region of the substrate, the first layer having a gallium-polar orientation with a top crystal plane consisting of a gallium face. A second layer including gallium and nitrogen is over a second region of the substrate, the second layer having a nitrogen-polar orientation with a top crystal plane consisting of a nitrogen face.
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
13.
THIN FILM TRANSISTORS HAVING FIN STRUCTURES INTEGRATED WITH 2D CHANNEL MATERIALS
Thin film transistors having fin structures integrated with two-dimensional (2D) channel materials are described. In an example, an integrated circuit structure includes a plurality of insulator fins above a substrate. A two-dimensional (2D) material layer is over the plurality of insulator fins. A gate dielectric layer is on the 2D material layer. A gate electrode is on the gate dielectric layer. A first conductive contact is on the 2D material layer adjacent to a first side of the gate electrode. A second conductive contact is on the 2D material layer adjacent to a second side of the gate electrode, the second side opposite the first side.
Examples described herein relate to a driver that is to: determine a configuration of a packet processing pipeline of a network interface device to perform an instruction set written in a domain specific language (DSL) for the packet processing pipeline based on emulation or analysis of a parser of the packet processing pipeline and provide the configuration to the packet processing pipeline of the network interface device to specify operations of the packet processing pipeline of the network interface device.
Methods, apparatus, systems, and articles of manufacture are disclosed for cross-device content transfer. An example first electronic device disclosed herein includes processor circuitry to at least one of instantiate or execute machine-readable instructions to detect a second electronic device; detect an action of a user of the first electronic device; compare the action to a ruleset; facilitate transfer of content from the first electronic device to the second electronic device when the action complies with the ruleset; and prevent transfer of content from the first electronic device to the second electronic device when the action does not comply with the ruleset.
Embodiments described herein may be related to apparatuses, processes, and techniques directed to packages that include one or more dies that are coupled with one or more glass layers. These glass layers may be within an interposer or a patch to which the one or more dies are attached. In addition, these glass layers may be used to facilitate pitch translation between the one or more dies proximate to a first side of the glass layer and a substrate proximate to a second side of the glass layer opposite the first side, to which the one or more dies are electrically coupled. Other embodiments may be described and/or claimed.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
17.
DEVICE, SYSTEM, AND METHOD FOR BUFFERING PROCESSOR INTERRUPTS
Disclosed herein is system for buffering processor interrupts from active input devices, such as Bluetooth devices, so that they are aligned with a video refresh rate. The system may include a processor that operates in a first operating mode (e.g., a low power mode) and, in response to an interrupt request, switch to a second operating mode (e.g., a higher power mode). The first operating mode may be different from the second operating mode (e.g., each with a different level of power consumption). The system may also include a video subsystem, in communication with the processor, that provides video information at a refresh rate. The system may also include an input subsystem, such as a wireless communication system, in communication with the processor, that receives an activity trigger representing an activity of a input device, such as a human input device, and provides, based on the refresh rate, the activity trigger to the processor as the interrupt request.
G06F 3/038 - Control and interface arrangements therefor, e.g. drivers or device-embedded control circuitry
G06F 3/0338 - Pointing devices displaced or positioned by the user; Accessories therefor with detection of limited linear or angular displacement of an operating part of the device from a neutral position, e.g. isotonic or isometric joysticks
G09G 5/00 - Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
G06F 3/02 - Input arrangements using manually operated switches, e.g. using keyboards or dials
G06F 3/0354 - Pointing devices displaced or positioned by the user; Accessories therefor with detection of 2D relative movements between the device, or an operating part thereof, and a plane or surface, e.g. 2D mice, trackballs, pens or pucks
G06F 9/48 - Program initiating; Program switching, e.g. by interrupt
G06F 1/3296 - Power saving characterised by the action undertaken by lowering the supply or operating voltage
In one embodiment, a resonator device includes a substrate comprising a piezoelectric material and a set of electrodes on the substrate. The electrodes are in parallel and a width of the electrodes is equal to a distance between the electrodes. The resonator device further includes a set of switches, with each switch coupled to a respective electrode. The switches are to connect to opposite terminals of an alternating current (AC) signal source and select between the terminals of the AC signal source based on an input signal.
A computing node includes interface circuitry and processing circuitry. To implement a spectrum harvesting entity in a wireless network configured for crowdsource-based unlicensed spectrum harvesting, the processing circuitry is configured to select a set of crowdsourcing nodes from a plurality of crowdsourcing nodes available in the wireless network. A plurality of spectrum occupancy reports (SORs) is received from the set of crowdsourcing. Each of the plurality of SORs indicates a channel occupancy status of a communication channel in the unlicensed spectrum sensed by a corresponding crowdsourcing node of the set and geolocation associated with the corresponding crowdsourcing node. A spectrum occupancy map of the unlicensed spectrum is generated based on the channel occupancy status and the geolocation provided in the plurality of SORs by each crowdsourcing node of the set of crowdsourcing nodes.
In an embodiment, a processor may include a mesh network and a clock regulation circuit. The mesh network may include multiple mesh stops to operate based on a mesh clock signal. Each mesh stop may include a bandwidth counter to transmit a bandwidth count in response to a pulse of a synchronization signal. The clock regulation circuit may be to: receive a plurality of bandwidth counts from the plurality of mesh stops; aggregate the plurality of bandwidth counts to obtain an aggregated bandwidth value; determine a cycle stealing value based at least on a comparison of the aggregated bandwidth value to at least one threshold value; and gate the mesh clock signal based on the determined cycle stealing value. Other embodiments are described and claimed.
In an embodiment, a processor may include an execution engine to execute a plurality of instructions, a memory to store a tagged data structure comprising a plurality of entries, and an eviction circuit. The eviction circuit may be to: generate a pseudo-random number responsive to an eviction request for the tagged data structure; in response to a determination that the pseudo-random number is outside of a valid eviction range for the plurality of entries, generate an alternative identifier by rotating through the valid eviction range, the valid eviction range comprising a range of numbers that are valid to identify victim entries of the tagged data structure; and evict a victim entry from the tagged data structure, the victim entry associated with the alternative identifier. Other embodiments are described and claimed.
In an optical circuit, a substrate can define a cavity that extends into a substrate front surface. A sidewall of the cavity can include a substrate optical port. An optical path can extend through the substrate from a connector optical port to the substrate optical port. A photonic integrated circuit (PIC) can attach to the substrate. A PIC front surface can include a plurality of electrical connections. A PIC edge surface can extend around at least a portion of a perimeter of the PIC between the PIC front surface and a PIC back surface. A PIC optical port can be disposed on the PIC edge surface and can accept or emit an optical beam along a PIC optical axis. The PIC optical axis can be aligned with the substrate optical port when the PIC is attached to the substrate.
Methods and apparatus relating to memory side prefetch architecture for improved memory bandwidth are described. In an embodiment, logic circuitry transmits a Direct Memory Controller Prefetch (DMCP) request to cause a prefetch of data from memory. A memory controller receives the DMCP request and issues a plurality of read operations to the memory in response to the DMCP request. Data read from the memory is stored in a storage structure in response to the plurality of read operations. Other embodiments are also disclosed and claimed.
G06F 12/0862 - Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with prefetch
G06F 13/28 - Handling requests for interconnection or transfer for access to input/output bus using burst mode transfer, e.g. direct memory access, cycle steal
An embodiment of an integrated circuit may comprise a management controller and circuitry communicatively coupled to the management controller, the circuitry to apply two or more respective controls to statistical data from two or more respective data sources in accordance with respective configuration information for each data source, and store the statistical data in a memory in accordance with the applied two or more controls. Other embodiments are disclosed and claimed.
Thin film transistors having semiconductor structures integrated with two-dimensional (2D) channel materials are described. In an example, an integrated circuit structure includes a two-dimensional (2D) material layer above a substrate. A gate stack is above the 2D material layer, the gate stack having a first side opposite a second side. A semiconductor structure including germanium is included, the semiconductor structure laterally adjacent to and in contact with the 2D material layer adjacent the first side of the gate stack. A first conductive structure is adjacent the first side of the second gate stack, the first conductive structure over and in direct electrical contact with the semiconductor structure. The semiconductor structure is intervening between the first conductive structure and the 2D material layer. A second conductive structure is adjacent the second side of the second gate stack, the second conductive structure over and in direct electrical contact with the 2D material layer.
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
26.
SCALABLE EOS AND AGING TOLERANT LEVEL SHIFTER FOR A HIGH VOLTAGE DESIGN FOR THIN GATE TECHNOLOGY
A level shifter circuit, comprising one or more thin gate transistors having source and drain terminals coupled, respectively, to a power supply node and a reference node, where the one or more thin gate transistors have an electrical over stress (EOS) threshold voltage that is lower than a voltage of the power supply applied across two terminals of the one or more thin gate transistors. The circuit further includes a PFET pulldown circuit coupled to an EOS protection circuit to limit the voltage difference across at least two terminals of the one or more thin gate transistors to a voltage below the EOS threshold voltage based on the threshold voltage the PFET.
Methods and apparatus to embed host dies in a substrate are disclosed An apparatus includes a first die having a first side and a second side opposite the first side. The first side includes a first contact to be electrically coupled with a second die. The second side includes a second contact. The apparatus further includes a substrate including a metal layer and a dielectric material on the metal layer. The first die is encapsulated within the dielectric material. The second contact of the first die is bonded to the metal layer independent of an adhesive.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
28.
SCALABLE ADDRESS DECODING SCHEME FOR CXL TYPE-2 DEVICES WITH PROGRAMMABLE INTERLEAVE GRANULARITY
Methods and apparatus relating to a scalable address decoding scheme for Compute Express Link™ or CXL™ Type-2 devices with programmable interleave granularity are described. In an embodiment, configurator logic circuitry determines an interleave granularity and an address range size for a plurality of devices coupled to a socket of a processor. A single System Address Decoder (SAD) rule for two or more of the plurality of the devices coupled to the socket of the processor is stored in memory. A memory access transaction directed at a first device from the plurality of devices is routed to the first device in accordance with the SAD rule. Other embodiments are also disclosed and claimed.
Techniques for self-assembly of regions in a dielectric layer with different electrical properties are described herein. In one example, a package includes a substrate, a layer of dielectric material over the substrate, the layer of dielectric material including a filler material. The package includes a plurality of conductive traces in the layer of dielectric material, and a filler-depleted radial region of the dielectric material around each of the plurality of conductive traces. The filler-depleted radial region has a lower volume-percentage of filler than other regions of the layer of dielectric material. In one example, the conductive traces, filler, or both include a coating to cause the filler and traces to have opposing surface chemistry.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
An ultra-low profile coaxial cable connector (i.e. plug) is provided that implements a lateral coupling of a coaxial cable inner conductor and center pin of a mating PCB-mounted coaxial receptacle. The overall height of a mating coaxial receptacle center pin is also reduced by way of a cutout in the receptacle ground ring as well as a cutout in a mating outer shell of the coaxial cable connector. The ultra-low profile coaxial cable connector achieves a reduction in mated height of less than 1.0 mm for both 1.13 mm diameter and 0.81 mm diameter coaxial cables. In both cases, the coaxial cable connector designs as discussed herein enable a further reduction in the total thickness of communication module boards to 1.25 mm, thereby meeting the high demands for thinner electronic device designs.
Microelectronic assemblies including photonic integrated circuits (PICs), related devices and methods, are disclosed herein. For example, in some embodiments, a photonic assembly may include an integrated circuit (IC) in a first layer including an insulating material, wherein the IC is embedded in the insulating material; a PIC, having an active surface, in a second layer, wherein the second layer is on the first layer, the second layer includes the insulating material, and the PIC is embedded in the insulating material with the active surface facing the first layer and electrically coupled to the IC; and a housing, having an optical lens optically coupled to an internal surface of the housing, attached to the active surface of the PIC and extending from the active surface of the PIC through the insulating material in the first layer, wherein the internal surface of the housing is opposite the active surface of the PIC.
Embodiments described herein may be related to apparatuses, processes, and techniques directed to a glass core within a substrate in a package, with one or more through glass vias (TGV) that are filled with a conductive material to electrically couple a first side of the glass core with a second side of the glass layer opposite the first side. A pad, also of conductive material, is electrically and physically coupled with a first and/or second end of the conductive material of the TGV. A layer of dielectric material is between at least a portion of the pad and the surface of the glass core between the pad and the glass core during manufacturing, handling, and/or operation to facilitate a reduction of stress cracks in the glass core. Other embodiments may be described and/or claimed.
Embodiments disclosed herein include electronic packages with first level interconnects that comprise a first layer. In an embodiment, the electronic package comprises a package substrate and a pad on the package substrate. In an embodiment, the pad comprises copper. In an embodiment, a first layer is over the pad. In an embodiment, the first layer comprises iron. In an embodiment, a solder is over the first layer, and a die is coupled to the package substrate by the solder.
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H01L 23/528 - Layout of the interconnection structure
34.
LANE BASED NORMALIZED HISTORICAL ERROR COUNTER VIEW FOR FAULTY LANE ISOLATION AND DISAMBIGUATION OF TRANSIENT VERSUS PERSISTENT ERRORS
Methods and apparatus relating to lane based normalized historical error counter view for faulty lane isolation and disambiguation of transient versus persistent errors are described. In an embodiment, a plurality of storage entries store error information to be detected at one or more physical lanes of an interface. Faulty lane detection logic circuitry determines which of the one or more physical lanes is faulty or more likely to be faulty based at least in part on the stored error information for the one or more physical lanes of the interface. The stored error information comprises historical error details for the one or more physical lanes of the interface. Other embodiments are also disclosed and claimed.
H03L 7/107 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range using a variable transfer function for the loop, e.g. low pass filter having a variable bandwidth
H03L 7/089 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses
H03L 7/081 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop provided with an additional controlled phase shifter
H03L 7/099 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
G08C 17/02 - Arrangements for transmitting signals characterised by the use of a wireless electrical link using a radio link
Integrated circuits including lateral diodes. In an example, diodes are formed with laterally neighboring source and drain regions (diffusion regions) configured with different polarity epitaxial growths (e.g., p-type and n-type), to provide an anode and cathode of the diode. In some such cases, dopants may be used in the channel region to create or otherwise enhance a PN or PIN junction between the diffusion regions and the semiconductor material of a channel region. The channel region can be, for instance, one or more nanoribbons or other such semiconductor bodies that extend between the oppositely-doped diffusion regions. In some cases, nanoribbons making up the channel region are left unreleased, thereby preserving greater volume through which diode current can flow. Other features include skipped epitaxial regions, elongated gate structures, using isolation structures in place of gate structures, and/or sub-fin conduction paths that are supplemental or alternative to a channel-based conduction paths.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
Microelectronic assemblies including photonic integrated circuits (PICs), related devices and methods, are disclosed herein. For example, in some embodiments, a photonic assembly may include a PIC in a first layer including an insulating material, wherein the PIC has an active side and an opposing backside, and wherein the PIC is embedded in the insulating material with the active side facing down; a conductive pillar in the first layer; an integrated circuit (IC) in a second layer, wherein the second layer is on the first layer, wherein the second layer includes the insulating material and the IC is embedded in the insulating material in the second layer, and wherein the IC is electrically coupled to the backside of the PIC and the conductive pillar; and an optical component optically coupled to the active surface of the PIC.
Spiking neuron circuits and methods are provided in this disclosure. A spiking neuron may include a triggerable and frequency-controllable oscillator that is configured to generate an oscillator signal. The spiking neuron may further include a spike signal detector that is configured to generate spike detection signals in response to detection of input spike signals. The spike signal detector may generate the spike detection signals based on the oscillator signal. The spiking neuron may further include a neuron structure that is configured to provide an output spike signal based on the spike detection signals and the oscillator signal.
Integrated circuit structures having a dielectric gate wall and a dielectric gate plug, and methods of fabricating integrated circuit structures having a dielectric gate wall and a dielectric gate plug, are described. For example, an integrated circuit structure includes a sub-fin having a portion protruding above a shallow trench isolation (STI) structure. A plurality of horizontally stacked nanowires is over the sub-fin. A gate dielectric material layer is over the protruding portion of the sub-fin, over the STI structure, and surrounding the horizontally stacked nanowires. A conductive gate layer is over the gate dielectric material layer. A conductive gate fill material is over the conductive gate layer. A dielectric gate wall is laterally spaced apart from the sub-fin and the plurality of horizontally stacked nanowires, the dielectric gate wall on the STI structure. A dielectric gate plug is on the dielectric gate wall.
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
Systems, apparatuses and methods may provide for detecting an identifier communication from a writing implement and transitioning a previously modified interior page of an electronic notepad from a locked state to an unlocked state if the identifier communication corresponds to one or more stored identifiers. Moreover, a plurality of additional interior pages of the electronic notepad may be maintained in the locked state while the previously modified interior page is in the unlocked state.
Embodiments described herein may be related to apparatuses, processes, and techniques directed to a protective coating for an edge of a glass layer, in particular a glass core within a substrate of a package, where the protective coating serves to protect the edge of the glass core and fill in cracks at the edges of the glass. This protective coating will decrease cracking during stresses applied to the glass layer during manufacturing or operation. Other embodiments may be described and/or claimed.
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
C03C 17/32 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a microelectronic subassembly including a first bridge component in a first layer, the first bridge component having a first surface and an opposing second surface, and a die in a second layer, wherein the second layer is on the first layer, and the die is electrically coupled to the second surface of the first bridge component; a package substrate having a second bridge component embedded therein, wherein the second bridge component is electrically coupled to the first surface of the first bridge component; and a microelectronic component on the second surface of the package substrate and electrically coupled to the second bridge component, wherein the microelectronic component is electrically coupled to the die via the first and second bridge components.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
43.
APPARATUS AND METHOD FOR DETECTING AND RECOVERING FROM DATA FETCH ERRORS
An apparatus and method are described for detecting and correcting data fetch errors within a processor core. For example, one embodiment of an instruction processing apparatus for detecting and recovering from data fetch errors comprises: at least one processor core having a plurality of instruction processing stages including a data fetch stage and a retirement stage; and error processing logic in communication with the processing stages to perform the operations of: detecting an error associated with data in response to a data fetch operation performed by the data fetch stage; and responsively performing one or more operations to ensure that the error does not corrupt an architectural state of the processor core within the retirement stage.
G06F 11/14 - Error detection or correction of the data by redundancy in operation, e.g. by using different operation sequences leading to the same result
G06F 11/10 - Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
44.
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DOPED SUBFIN
Gate-all-around integrated circuit structures having a doped subfin, and methods of fabricating gate-all-around integrated circuit structures having a doped subfin, are described. For example, an integrated circuit structure includes a subfin structure having well dopants. A vertical arrangement of horizontal semiconductor nanowires is over the subfin structure. A gate stack is surrounding a channel region of the vertical arrangement of horizontal semiconductor nanowires, the gate stack overlying the subfin structure. A pair of epitaxial source or drain structures is at first and second ends of the vertical arrangement of horizontal semiconductor nanowires.
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
Gate-all-around integrated circuit structures having confined epitaxial source or drain structures, are described. For example, an integrated circuit structure includes a plurality of nanowires above a sub-fin. A gate stack is over the plurality of nanowires and the sub-fin. Epitaxial source or drain structures are on opposite ends of the plurality of nanowires. The epitaxial source or drain structures comprise i) a first PMOS epitaxial (pEPI) region of germanium and boron, ii) a second pEPI region of silicon, germanium and boron on the first pEPI region at a contact location, iii) a capping layer comprising silicon over the second pEPI region. A conductive contact material comprising titanium is on the capping layer.
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
Embodiments disclosed herein include electronic packages and methods of forming such electronic packages. In an embodiment, an electronic package comprises a plurality of stacked layers. In an embodiment, a first trace is on a first layer, wherein the first trace has a first thickness. In an embodiment, a second trace is on the first layer, wherein the second trace has a second thickness that is greater than the first thickness. In an embodiment, a second layer is over the first trace and the second trace.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
Described herein are back-gated transistors with fin-shaped gates, and IC devices including such transistors. The transistor includes a gate electrode formed over a support structure, where the gate electrode includes a metal fin that extends perpendicular to the support structure. A gate dielectric formed of a metal oxide film is deposited over the gate electrode and conforming to the fin shape, and a channel material formed of a high mobility oxide semiconductor film is deposited over the gate dielectric, the channel material also conforming to the fin shape. Source and drain contacts may be arranged so that the fin creates a channel with a larger channel width or a longer channel length.
An embodiment of an integrated circuit may comprise local memory, a plurality of per-page counters located in a non-system-addressable region of the local memory, and circuitry coupled to the local memory, the circuitry to count accesses to pages of a system-addressable memory space with the plurality of per-page counters located in the non-system-addressable region of the local memory. Other embodiments are disclosed and claimed.
Techniques are provided for forming one or more thermoelectric devices integrated within a substrate of an integrated circuit. Backside substrate processing may be used to form adjacent portions of the substrate that are doped with alternating dopant types (e.g., n-type dopants alternating with p-type dopants). The substrate can then be etched to form pillars of the various n-type and p-type portions. Adjacent pillars of opposite dopant type can be electrically connected together via a conductive layer. Additionally, the top portions of adjacent pillars are connected together, and the bottom portions of a next pair of adjacent pillars being coupled together, in a repeating pattern to ensure that current flows through the length of each of the doped pillars. The flow of current through alternating n-type and p-type doped material creates a heat flux that transfers heat from one end of the integrated thermoelectric device to the other end.
H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
H01L 27/16 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including thermomagnetic components
In an optical circuit, a substrate can have a substrate top surface, a substrate bottom surface, and a substrate edge surface that extends around at least a portion of a perimeter of the substrate. A photonic integrated circuit (PIC) can be attached to the substrate. The PIC can have a PIC optical port that is configured to accept or emit an optical beam along a PIC optical axis. A lens can be located at the substrate edge surface. The substrate can include an optical path that extends through the substrate from a first substrate optical port that is aligned with the PIC optical axis to a second substrate optical port that faces the lens, such that an optical beam emergent from the PIC optical port can traverse the optical path and pass through the lens to emerge substantially parallel to the substrate top surface.
One embodiment provides for a computer-readable medium storing instructions that cause one or more processors to perform operations comprising determining a per-layer scale factor to apply to tensor data associated with layers of a neural network model and converting the tensor data to converted tensor data. The tensor data may be converted from a floating point datatype to a second datatype that is an 8-bit datatype. The instructions further cause the one or more processors to generate an output tensor based on the converted tensor data and the per-layer scale factor.
An electronic device and associated methods are disclosed. In one example, the electronic device includes a semiconductor device. In selected examples, the semiconductor device may include two semiconductor dies, a redistribution layer, an interconnect bridge coupled between the two semiconductor dies and located vertically between the two semiconductor dies and the redistribution layer, and a metallic connection passing through the redistribution layer and coupled to one or more of the two semiconductor dies in a solder-free connection.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
53.
DIMM COOLING ASSEMBLY WITH HEAT SPREADER ANTI-ROTATION MECHANISM
An apparatus is described. The apparatus includes a DIMM cooling assembly. The DIMM cooling assembly includes first and second heat spreaders to be respectively disposed on first and second sides of the DIMM's circuit board. The first and second sides having respective memory chips. The DIMM cooling assembly includes a heat dissipative structure. The DIMM's circuit board is to be disposed between the heat dissipative structure and a printed circuit board that the DIMM is to be plugged into. The DIMM cooling assembly includes fixturing elements to apply compressive forces toward the respective side edges of the DIMM's circuit board to the heat spreaders.
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
H05K 7/14 - Mounting supporting structure in casing or on frame or rack
A mailbox register is provided in local memory of a processor device, the processor device connected to a host processor device by an interconnect. The processor device accesses the mailbox register to determine that a ready value in the mailbox register identifies that an executable has been written to the mailbox register by the host processor device. The processor device reads the executable from the mailbox register and executes the executable to generate a result. The processor device writes an execution finished value to the mailbox register based on execution of the executable by the processor circuitry, which the host processor device can read to identify that execution of the executable is complete.
G06F 21/54 - Monitoring users, programs or devices to maintain the integrity of platforms, e.g. of processors, firmware or operating systems during program execution, e.g. stack integrity, buffer overflow or preventing unwanted data erasure by adding security routines or objects to programs
G06F 21/57 - Certifying or maintaining trusted computer platforms, e.g. secure boots or power-downs, version controls, system software checks, secure updates or assessing vulnerabilities
A semiconductor device may include a first plate-like element having a first substantially planar connection surface with a first connection pad and a second plate-like element having a second substantially planar connection surface with a second connection pad corresponding to the first connection pad. The device may also include a connection electrically and physically coupling the first and second plate-like elements and arranged between the first and second connection pads. The connection may include a deformed elongate element arranged on the first connection pad and extending toward the second connection pad and solder in contact with the second connection pad and the elongate element.
Keyboards that are selectably configurable between a standard interface and a braille interface. In embodiments, the keyboard is equipped with six keys corresponding to six dots of a braille matrix, each of the keys equipped with a shape memory alloy spring or other mechanism to cause each of the keys to selectably extend above the keyboard plane. On activation, the six keys are extended and the remaining keys deactivated, to provide an easy to locate braille interface. On subsequent activation, the six keys are retracted and the keyboard is reverted to a standard interface. Other embodiments may be described and/or claimed.
G06F 3/023 - Arrangements for converting discrete items of information into a coded form, e.g. arrangements for interpreting keyboard generated codes as alphanumeric codes, operand codes or instruction codes
G06F 3/02 - Input arrangements using manually operated switches, e.g. using keyboards or dials
An apparatus for processing data is provided comprising persistent memory circuitry, non-persistent memory circuitry and memory controller circuitry. The memory controller circuitry provides two or more memory sub-channels and each memory sub-channel is for routing of memory access transactions for at least one of the persistent memory circuitry and the non-persistent memory circuitry. The memory controller circuitry has channel selection circuitry to detect when there are no non-persistent memory transactions on one of the two or more memory sub-channels and responsive to the detection, is to route any persistent memory transactions to a different one of the two or more memory sub-channels. A memory controller apparatus, a persistent memory Dual In-line Memory Module, a method and computer program are also provided.
Capacitor pads and methods of manufacturing the same are disclosed herein. An example apparatus disclosed herein includes a substrate to support a die, and a die-side capacitor pad on the substrate, the die-side capacitor pad including a plurality of distinct pad portions, the distinct pad portions spaced apart from one another.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
Microelectronic assemblies including photonic integrated circuits (PICs), related devices and methods, are disclosed herein. For example, in some embodiments, a photonic assembly may include a PIC in a first layer including an insulating material, wherein the PIC has an active surface and an opposing backside, and wherein the PIC is embedded in the insulating material with the active surface facing up; a conductive pillar in the first layer; an integrated circuit (IC) in a second layer, wherein the second layer is on the first layer and the second layer includes the insulating material, wherein the IC is embedded in the insulating material in the second layer, and wherein the IC is electrically coupled to the active surface of the PIC and the conductive pillar; and an optical component optically coupled to the active surface of the PIC and extending through the insulating material in the second layer.
Systems, apparatuses, and methods provide for technology that stores a sampled dynamic start voltage value based on a fast to program plane. A current multi-plane program operation is received corresponding to a current cell block and wordline pair associated with a current enabled plane of a plurality of enabled planes. A block list is scanned based on the current cell block and wordline pair. The block list includes a plurality of entries including a reference start voltage corresponding to a reference cell block and wordline pair associated with a reference enabled plane. Additionally, the reference start voltage is reused as a dynamic start voltage in response to finding a match between the current cell block and wordline pair as compared to the reference cell block and wordline pair. Such a match is performed only for a least enabled plane of the plurality of enabled planes.
Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface and an opposing second surface, in a first layer; a redistribution layer (RDL) on the first layer, wherein the RDL is electrically coupled to the second surface of the first die by solder interconnects, and a second die in a second layer on the RDL, wherein the second die is electrically coupled to the RDL by non-solder interconnects.
Embodiments described herein may be related to apparatuses, processes, and techniques directed to embedding capacitors in through glass vias within a glass core of a substrate. In embodiments, the through glass vias may extend entirely from a first side of the glass core to a second side of the glass core opposite the first side. Layers of electrically conductive material and dielectric material may then be deposited within the through glass via to form a capacitor. the capacitor may then be electrically coupled with electrical routings on buildup layers on either side of the glass core. Other embodiments may be described and/or claimed.
Disclosed herein are waveguide interconnect bridges for integrated circuit (IC) structures, as well as related methods and devices. In some embodiments, a waveguide interconnect bridge may include a waveguide material and one or more wall cavities in the waveguide material. The waveguide interconnect bridge may communicatively couple two dies in an IC package.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Embodiments described herein may be related to apparatuses, processes, and techniques directed an optical waveguide formed in a glass layer. The optical waveguide may be formed by creating a first trench extending from a surface of the glass layer, and then creating a second trench extending from the bottom of the first trench, then subsequently filling the trenches with a core material which may then be topped with a cladding material. Other embodiments may be described and/or claimed.
Embodiments described herein may be related to apparatuses, processes, and techniques directed to dense integration of PICs in a substrate using an optical fanout structure that includes waveguides formed within a substrate to optically couple with the PICs at an edge of the substrate. One or more PICs may then be electrically with dies such as processor dies or memory dies. The one or more PICs may be located within a cavity in the substrate. The substrate may be made of glass or silicon. Other embodiments may be described and/or claimed.
G02B 6/42 - Coupling light guides with opto-electronic elements
G02B 6/12 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
66.
EMBEDDED GLASS CORES IN PACKAGE SUBSTRATES AND RELATED METHODS
Embedded glass cores in package substrates and related methods are disclosed herein including an integrated circuit including a substrate having a first side and a second side opposite the first side, a plurality of vias disposed within the substrate to electrically couple corresponding contacts on the first and second sides of the substrate, a glass core surrounding a first via of the plurality of vias, and an organic core surrounding a second via of the plurality of vias, the second via different than the first via.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
67.
METHODS, SYSTEMS, APPARATUS, AND ARTICLES OF MANUFACTURE TO PRODUCE INTEGRATED CIRCUIT PACKAGES WITH NANO-ROUGHENED INTERCONNECTS
Methods, systems, apparatus, and articles of manufacture to produce nano-roughened integrated circuit packages are disclosed. An example integrated circuit (IC) package includes a substrate, a semiconductor die, and a metal interconnect to electrically couple the semiconductor die to the substrate, the metal interconnect including a nano-roughened surface.
Embodiments described herein may be related to apparatuses, processes, and techniques directed to a double-sided glass substrate, to which a PIC is hybrid bonded to a first side of the glass substrate. A die is coupled with the second side of the glass substrate opposite the first side, the PIC and the die are electrically coupled with electrically conductive through glass vias that extend from the first side of the glass substrate to the second side of the glass substrate. Other embodiments may be described and/or claimed.
In one embodiment, a non-volatile memory apparatus includes memory tiles comprising a set of main memory tiles in rows and columns, a set of row termination tiles at the ends of the rows, and a set of column termination tiles at the ends of the columns. Each memory tile includes a plurality of decks, with each deck comprising bitlines, wordlines orthogonal to the bitlines, and memory cells between overlapping areas of the bitlines and the wordlines. The bitlines/wordlines include a set of bitlines/wordlines of a first layer that traverse row/column termination tiles and main memory tiles adjacent the row/column termination tiles, with each bitline/wordline of the set of bitlines/wordlines connected to another bitline of a second layer in the termination tile.
G11C 5/02 - Disposition of storage elements, e.g. in the form of a matrix array
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
G11C 5/06 - Arrangements for interconnecting storage elements electrically, e.g. by wiring
An apparatus is described. The apparatus includes a semiconductor chip package substrate having alternating metal and dielectric layers. First and second ones of the dielectric layers that are directly above and directly below a first of the metal layers that is patterned to have supply and/or reference voltage structures have respectively higher dielectric constant (Dk) and higher dissipation factor (Df) than third and fourth ones of the dielectric layers that are directly above and directly below a second of the metal layers that is patterned to have signal wires that are to transport signals having a pulse width of 1 ns or less.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
71.
MOAT PROTECTION TO PREVENT CRACK PROPAGATION IN GLASS CORE SUBSTRATES OR GLASS INTERPOSERS
Embodiments disclosed herein include electronic packages and methods of assembling such electronic packages. In an embodiment, an electronic package comprises a core, where the core comprises glass. In an embodiment, a hole is through a thickness of the core, and a plug fills the hole, where the plug comprises a polymeric material. In an embodiment, first layers are over the core, where the first layers comprise a dielectric material; and second layers are under the core, where the second layers comprise the dielectric material.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
72.
METHODS AND APPARATUS TO IMPROVE ADHESION BETWEEN METALS AND DIELECTRICS IN CIRCUIT DEVICES
Methods and apparatus to improve adhesion between metals and dielectrics in circuit devices are disclosed. An apparatus includes a metal layer, a dielectric layer adjacent the metal layer, and a polymeric bonding layer at an interface between the metal layer and the dielectric layer. A polymer molecule in the polymeric bonding layer including an R1 group, an R2 group, and a polymer chain extending between the R1 group and the R2 group. The R1 group is different than the R2 group. The polymeric bonding layer is bonded to the metal layer via the R1 group. The polymeric bonding layer is bonded to the dielectric layer via the R2 group.
Thin film transistors having strain-inducing structures integrated with two-dimensional (2D) channel materials are described. In an example, an integrated circuit structure includes a two-dimensional (2D) material layer above a substrate. A gate stack is on the 2D material layer, the gate stack having a first side opposite a second side. A first gate spacer is on the 2D material layer and adjacent to the first side of the gate stack. A second gate spacer is on the 2D material layer and adjacent to the second side of the gate stack. The first gate spacer and the second gate spacer induce a strain on the 2D material layer. A first conductive structure is on the 2D material layer and adjacent to the first gate spacer. A second conductive structure is on the 2D material layer and adjacent to the second gate spacer.
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
74.
INTEGRATED CIRCUIT PACKAGES WITH ON PACKAGE MEMORY ARCHITECTURES
Integrated circuit (IC) packages with On Package Memory (OPM) architectures are disclosed herein. An example IC package includes a substrate having a first side and a second side opposite the first side, a semiconductor die mounted on the first side of the substrate, and a die pad on the first side of the substrate. The die is electrically coupled to the die pad. The IC package also includes a memory pad on the first side of the substrate. The memory pad is to be electrically coupled to a memory mounted on the first side of the substrate. The IC package further includes a ball on the second side of the substrate, and a memory interconnect in the substrate electrically coupling the die pad, the memory pad, and the ball.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/367 - Cooling facilitated by shape of device
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
Microelectronic assemblies including photonic integrated circuits (PICs), related devices and methods, are disclosed herein. For example, in some embodiments, a photonic assembly may include a PIC in a first layer having a first surface and an opposing second surface, wherein the first layer includes an insulating material, wherein the PIC has an active side, an opposing backside, and a lateral side substantially perpendicular to the active side and backside, and wherein the PIC is embedded in the insulating material with the active side facing up; an integrated circuit (IC) in a second layer at the second surface of the first layer, wherein the IC is electrically coupled to the active side of the PIC; and an optical component, having a reflector, optically coupled to the lateral side of the PIC and extending at least partially through the insulating material in the first layer along the lateral side of the PIC.
Techniques and mechanisms for providing power telemetry information which indicates a total load current from one or more power supply units (PSUs). In an embodiment, a device is coupled to receive a first signal from the current share bus which is coupled to each of multiple PSUs. A voltage level of the first signal represents a target amount of current to be output by each of the one or more PSUs. A second signal is generated based on both the first signal, and on an indication of a scale according to which a primary PSU of the one or more PSUs represents a target amount of current. In another embodiment, an amplification is performed, based on the second signal and on a total number of the one or more PSUs, to generate an Isys signal which indicates a total load current output by the one or more PSUs.
Embodiments described herein may be related to apparatuses, processes, and techniques directed to glass core-based substrates with an asymmetric number of front and back-side copper layers. In embodiments, the front and/or backside copper layers may be referred to as stack ups or as buildup layers on the glass core substrate. Embodiments may allow lower overall substrate layer counts by allowing for more front side layers where the signal routing may typically be highest, without requiring a matching, or symmetric, number of backside copper layers. Other embodiments may be described and/or claimed.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
A substrate for an electronic device may include one or more layers. The substrate may include a cavity defined in the substrate. The cavity may be adapted to receive a semiconductor die. The substrate may include a fiducial mark positioned proximate the cavity. The fiducial mark may be exposed on a first surface of the substrate. The fiducial mark may include a first region including a dielectric filler material. The fiducial mark may include a second region including a conductive filler material. In an example, the second region surrounds the first region. In another example, the dielectric filler material has a lower reflectivity in comparison to the conductive filler material to provide a contrast between the first region and the second region.
An apparatus is described. The apparatus includes I/O structures having pads and solder balls to couple with a semiconductor chip, wherein, a first subset of pads and/or solder balls of the pads and solder balls that approach the semiconductor chip during coupling of the semiconductor chip to the I/O structures are thinner than a second subset of pads and/or solder balls of the pads and solder balls that move away from the semiconductor chip during the coupling of the semiconductor chip to the I/O structures.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 25/10 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices having separate containers
80.
GATHERING PAYLOAD FROM ARBITRARY REGISTERS FOR SEND MESSAGES IN A GRAPHICS ENVIRONMENT
An apparatus to facilitate gathering payload from arbitrary registers for send messages in a graphics environment is disclosed. The apparatus includes processing resources comprising execution circuitry to receive a send gather message instruction identifying a number of registers to access for a send message and identifying IDs of a plurality of individual registers corresponding to the number of registers; decode a first phase of the send gather message instruction; based on decoding the first phase, cause a second phase of the send gather message instruction to bypass an instruction decode stage; and dispatch the first phase subsequently followed by dispatch of the second phase to a send pipeline. The apparatus can also perform an immediate move of the IDs of the plurality of individual registers to an architectural register of the execution circuitry and include a pointer to the architectural register in the send gather message instruction.
Embodiments disclosed herein include electronic packages and methods of assembling such packages. In an embodiment, an electronic package comprises a core. In an embodiment the core comprises glass. In an embodiment, buildup layers are over the core, and a plug is embedded in the buildup layers. In an embodiment, the plug comprises a magnetic material. In an embodiment, an inductor wraps around the plug.
Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a package substrate, and a first pad over the package substrate. In an embodiment, a layer is over the package substrate, where the layer is an insulating material. In an embodiment, the electronic package further comprises a via through the layer and in contact with the first pad. In an embodiment a first end of the via has a first width and a second end of the via that is in contact with the first pad has a second width that is larger than the first width. In an embodiment, the electronic package further comprises a second pad over the via.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
83.
IMMEDIATE OFFSET OF LOAD STORE AND ATOMIC INSTRUCTIONS
One embodiment provides a graphics processor including a processing resource including a register file, memory, a cache memory, and load/store/cache circuitry to process load, store, and prefetch messages from the processing resource. The circuitry includes support for an immediate address offset that will be used to adjust the address supplied for a memory access to be requested by the circuitry. Including support for the immediate address offset removes the need to execute additional instructions to adjust the address to be accessed prior to execution of the memory access instruction.
Examples described herein relate to a system that prior to execution of a virtualized execution environment on a compute node, store at least one image block into at least one tier of storage of a hierarchical storage system based on priority of the at least one image block. In some examples, the at least one image block comprises at least one portion of an image of the virtualized execution environment.
Particular embodiments described herein provide for a wearable electronic device, such as a bracelet, coupled to a plurality of electronic components (which may include any type of components, elements, circuitry, etc.). One particular implementation of a wearable electronic device may include a plurality of sensors configured to measure at least one health parameter of a first user associated with the wearable electronic device, and a control module in communication with the plurality of sensors. The control module includes a processor configured to receive a plurality of health parameter measurements from at least a subset of the plurality of sensors, and determine a general health state of the first user based upon the received health parameter measurements.
An embodiment of an integrated circuit may comprise an instruction decoder to decode one or more instructions to be executed by a core, and circuitry coupled to the instruction decoder, the circuitry to determine if a decoded instruction involves a page to be fetched, and determine one or more hints for one or more optional pages that may be fetched along with the page for the decoded instruction. Other embodiments are disclosed and claimed.
Low-profile fasteners with springs that are either integrated with the fastener or are a physically separate component can provide a more evenly distributed load to a heat transfer device, such as a vapor chamber or a heat pipe. The low-profile fasteners do not increase the height of the base of a mobile computing device as the spring and the portion of the fastener that extends past the spring fit within a recess or cavity of the heat transfer device. The spring can be a diaphragm spring, a wave spring, or another suitable spring. The use of low-profile fasteners with springs to fasten a heat transfer device to a mainboard may allow for designs with a smaller mainboard area, which can leave room for a larger thermal management solution (which can increase cooling capacity) and allow for a greater thermal design power for the system.
A system includes a package layer with microchannels to spread heat localized in the package at an electronic die. The microchannel is integrated onto or into the package layer. The microchannel has a hollow heat conducting material with a rectangular cross-section through which a fluid is to flow to spread the heat. The microchannel can be an open channel that is sealed with a pump to cause the fluid to flow through the microchannel. The microchannel can be sealed in the integration process to result in a closed heat pipe structure in which liquid flows through expansion and compression in response to heating and cooling, respectively.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H01L 23/367 - Cooling facilitated by shape of device
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
A semiconductor device and method is disclosed. Devices shown include a die coupled to an integrated routing layer, wherein the integrated routing layer includes a first width that is wider than the die. Devices shown further included a molded routing layer coupled to the integrated routing layer.
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
Methods, apparatuses, and computer readable media for indicating channel puncturing in a physical (PHY) header of a PPDU are disclosed. Apparatuses of a non-access point (AP) station (STA) or of an AP are disclosed, where the apparatuses comprise processing circuitry configured to: decode a first portion of a physical (PHY) protocol data unit (PPDU), the first portion of the PPDU comprising a bandwidth subfield and a puncturing pattern subfield, the bandwidth subfield indicating a bandwidth of a transmission channel for the PPDU, and the puncturing pattern subfield indicating whether 20 MHz subchannels within the transmission channel are punctured. The processing circuitry is further configured to decode the second portion of the PPDU in accordance with the transmission channel and the punctured 20 MHz subchannels.
Modulus reduction for cryptography is described. An example of an apparatus includes multiplier circuitry to perform integer multiplication; and modulus reduction circuitry to perform modulus reduction based on a prime modulus, wherein the modulus reduction circuitry is to receive a product value, the product value resulting from multiplying a first n-bit value by a second n-bit value to generate the product value and perform modulus reduction to reduce the product value to a result within the prime modulus; and wherein the modulus reduction circuitry is based on shift and add operations.
H04L 9/32 - Arrangements for secret or secure communications; Network security protocols including means for verifying the identity or authority of a user of the system
H04L 9/30 - Public key, i.e. encryption algorithm being computationally infeasible to invert and users' encryption keys not requiring secrecy
92.
METHOD TO MINIMIZE HOT/COLD PAGE DETECTION OVERHEAD ON RUNNING WORKLOADS
Methods and apparatus to minimize hot/cold page detection overhead on running workloads. A page meta data structure is populated with meta data associated with memory pages in one or more far memory tier. In conjunction with one or more processes accessing memory pages to perform workloads, the page meta data structure is updated to reflect accesses to the memory pages. The page meta data, which reflects the current state of memory, is used to determine which pages are “hot” pages and which pages are “cold” pages, wherein hot pages are memory pages with relatively higher access frequencies and cold pages are memory pages with relatively lower access frequencies. Variations on the approach including filtering meta data updates on pages in memory regions of interest and applying a filter(s) to trigger meta data updates based on (a) condition(s). A callback function may also be triggered to be executed synchronously with memory page accesses.
G06F 12/0811 - Multiuser, multiprocessor or multiprocessing cache systems with multilevel cache hierarchies
G06F 12/123 - Replacement control using replacement algorithms with age lists, e.g. queue, most recently used [MRU] list or least recently used [LRU] list
G06F 13/16 - Handling requests for interconnection or transfer for access to memory bus
G06F 13/42 - Bus transfer protocol, e.g. handshake; Synchronisation
G06F 15/78 - Architectures of general purpose stored program computers comprising a single central processing unit
Methods and apparatus relating to logical resource partitioning via realm isolation are described. In an embodiment, a logic processor, to be assigned to one of a plurality of processor cores of a processor, executes one or more operations for at least one of a plurality of logical realms; The plurality of logical realms include a security monitor realm and the security monitor realm includes security monitor logic to maintain a Realm Identifier (RID) for each of the plurality of logical realms. The security monitor logic controls access to each of the plurality of realms based at least in part on the RID for each of the plurality of logical realms. Other embodiments are also disclosed and claimed.
G06F 21/53 - Monitoring users, programs or devices to maintain the integrity of platforms, e.g. of processors, firmware or operating systems during program execution, e.g. stack integrity, buffer overflow or preventing unwanted data erasure by executing in a restricted environment, e.g. sandbox or secure virtual machine
G06F 21/55 - Detecting local intrusion or implementing counter-measures
G06F 21/54 - Monitoring users, programs or devices to maintain the integrity of platforms, e.g. of processors, firmware or operating systems during program execution, e.g. stack integrity, buffer overflow or preventing unwanted data erasure by adding security routines or objects to programs
G06F 9/50 - Allocation of resources, e.g. of the central processing unit [CPU]
Methods, apparatus, systems and articles of manufacture to reduce power consumption and improve battery life of display systems using adaptive sync are disclosed. An example apparatus includes an interface to transmit frame data to a sink device, the frame data generated by a processor; a timer to initiate in response to the transmission of the frame data to the sink device; and the interface to transmit a low power indication to the sink device after the timer reaches a threshold amount of time.
An interposer apparatus for co-packaging an electronic integrated circuit and a photonic integrated circuit may include a dielectric substrate; an optical waveguide disposed on the dielectric substrate to optically couple the photonic integrated circuit disposed on one side of the dielectric substrate with at least one of another photonic integrated circuit disposed on the dielectric substrate or an optical device disposed on the dielectric substrate; and a metal interconnect disposed through the dielectric substrate to electrically couple the photonic integrated circuit disposed on the one side of the dielectric substrate with an electronic integrated circuit disposed on the other side of the dielectric substrate.
Integrated circuits including vertical diodes. In an example, a first transistor is above a second transistor. The first transistor includes a first semiconductor body extending laterally from a first source or drain region. The first source or drain region includes one of a p-type dopant or an n-type dopant. The second transistor includes a second semiconductor body extending laterally from a second source or drain region. The second source or drain region includes the other of the p-type dopant or the n-type dopant. The first source or drain region and second source or drain region are at least part of a diode structure, which may have a PN junction (e.g., first and second source/drain regions are merged) or a PIN junction (e.g., first and second source/drain regions are separated by an intrinsic semiconductor layer, or a dielectric layer and the first and second semiconductor bodies are part of the junction).
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Microelectronic assemblies including photonic integrated circuits (PICs), related devices and methods, are disclosed herein. For example, in some embodiments, a photonic assembly may include a PIC in a first layer including an insulating material, wherein the PIC has an active side and an opposing backside, and wherein the PIC is embedded in the insulating material with the active side facing up; an optical component optically coupled to the active surface of the PIC and extending at least partially through the first layer; and an integrated circuit (IC) in a second layer, wherein the second layer is on the first layer, wherein the second layer includes the insulating material, wherein the IC is embedded in the insulating material in the second layer, and wherein the IC is electrically coupled to the active side of the PIC.
A processor includes a counter to store a cycle count that tracks a number of cycles between retirement of a first branch instruction and retirement of a second branch instruction during execution of a set of instructions. The processor further includes a stack of registers coupled to the counter, wherein the stack of registers is to store branch type information including: a first value of the counter when the first branch instruction is retired; a second value of the counter when the second branch instruction is retired; a first type information value indicating a type of the first branch instruction; and a second type information value indicating a type of the second branch instruction.
Integrated circuits including lateral diodes. In an example, diodes are formed with laterally neighboring source and drain regions (diffusion regions) configured with different polarity epitaxial growths (e.g., p-type and n-type), to provide an anode and cathode of the diode. In some such cases, dopants may be used in the channel region to create or otherwise enhance a PN or PIN junction between the diffusion regions and the semiconductor material of a channel region. The channel region can be, for instance, one or more nanoribbons or other such semiconductor bodies that extend between the oppositely-doped diffusion regions. In some cases, nanoribbons making up the channel region are left unreleased, thereby preserving greater volume through which diode current can flow. Other features include skipped epitaxial regions, elongated gate structures, using isolation structures in place of gate structures, and/or sub-fin conduction paths that are supplemental or alternative to a channel-based conduction path.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
Thin film transistors having edge-modulated two-dimensional (2D) channel material are described. In an example, an integrated circuit structure includes a device layer including a two-dimensional (2D) material layer above a substrate, the 2D material layer including a center portion and first and second edge portions, the center portion consisting essentially of molybdenum or tungsten and of sulfur or selenium, and the first and second edge portions including molybdenum or tungsten and including tellurium.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
