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2023
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Invention
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Multilayered seed for perpendicular magnetic structure including an oxide layer.
The present inv... |
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Invention
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Magnetic memory element including perpendicular enhancement layers and dual oxide cap layers.
A ... |
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2022
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Invention
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Memory cell including two selectors and method of making same.
The present invention is directed... |
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Invention
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Magnetic memory element incorporating dual perpendicular enhancement layers. The present inventio... |
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Invention
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Multilayered seed for perpendicular magnetic structure including an oxide layer. The present inve... |
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2021
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Invention
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Magnetic memory read circuit and calibration method therefor. The present invention is directed t... |
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Invention
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Cross-point mram including self-compliance selector. The present invention is directed to a magne... |
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Invention
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Multilayered seed for perpendicular magnetic structure. The present invention is directed to a pe... |
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2020
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Invention
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Nonvolatile memory sensing circuit including variable current source. The present invention is di... |
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Invention
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Locally timed sensing of memory device. The present invention is directed to a nonvolatile memory... |
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Invention
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Bidirectional selector device for memory applications. The present invention is directed to a mag... |
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Invention
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Magnetic memory element incorporating perpendicular enhancement layer. The present invention is d... |
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Invention
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Method of implementing magnetic random access memory (mram) for mobile system-on-chip boot. The p... |
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Invention
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Magnetic memory cell including two-terminal selector device. The present invention is directed to... |
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2019
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Invention
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Power-efficient programming of magnetic memory. The present invention is directed to a method for... |
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Invention
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Multilayered seed structure for magnetic memory element including a cofeb seed layer. The present... |
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Invention
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Magnetic memory emulating dynamic random access memory (dram).
The present invention is directed... |
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Invention
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Three-dimensional nonvolatile memory. The present invention is directed to a memory array includi... |
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Invention
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Magnetic random access memory with dynamic random access memory (dram)-like interface. A non-vola... |
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Invention
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Magnetic memory element including magnesium perpendicular enhancement layer. The present inventio... |
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Invention
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Fast programming of magnetic random access memory (mram). The present invention is directed a met... |
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Invention
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Selector device incorporating conductive clusters for memory applications.
The present invention... |
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2018
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G/S
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Electronic memory units and products, namely, magnetic memory units, non-volatile memory units, v... |
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Invention
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Magnetic memory and method for using the same. The present invention is directed to a memory circ... |
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Invention
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Transient sensing of memory cells.
The present invention is directed to a method for sensing the... |
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Invention
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Magnetic random access memory with perpendicular enhancement layer. The present invention is dire... |
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Invention
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Method for manufacturing magnetic memory cells. The present invention is directed to a method for... |
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Invention
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Perpendicular magnetic tunnel junction (pmtj) with in-plane magneto-static switching-enhancing la... |
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Invention
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Magnetic memory element with multilayered seed structure. The present invention is directed to a ... |
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Invention
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Magnetic memory array incorporating selectors and method for manufacturing the same. The present ... |
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Invention
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Magnetic memory emulating dynamic random access memory (dram). The present invention is directed ... |
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Invention
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Magnetic memory incorporating dual selectors. The present invention is directed to a memory devic... |
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2017
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Invention
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Magnetic memory element with iridium anti-ferromagnetic coupling layer. The present invention is ... |
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Invention
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Magnetic random access memory with ultrathin reference layer. The present invention is directed t... |
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Invention
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Magnetic memory element with perpendicular enhancement layer. The present invention is directed t... |
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Invention
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Programming of magnetic random access memory (mram) by boosting gate voltage. The present inventi... |
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Invention
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Magnetic structure with multilayered seed. The present invention is directed to an MTJ memory ele... |
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Invention
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Transient sensing of memory cells. The present invention is directed to a method for sensing the ... |
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Invention
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Perpendicular magnetic fixed layer with high anisotropy. The present invention is directed to an ... |
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Invention
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Selector device having asymmetric conductance for memory applications. The present invention is d... |
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2016
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Invention
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Method for sensing memory element coupled to selector device. The present invention is directed t... |
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Invention
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Selector device incorporating conductive clusters for memory applications. The present invention ... |
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2013
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Invention
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Memory system having thermally stable perpendicular magneto tunnel junction (mtj) and a method of... |
