Cree, Inc.

United States of America


 
Total IP 1,158
Total IP incl. subs 1,294 (+ 138 for subs)
Total IP Rank # 1,094
IP Activity Score 2.9/5.0    136
IP Activity Rank # 5,114
IP AS incl. subs 2.6/5.0    148
Stock Symbol CREE (nasdaq)
ISIN US2254471012
Market Cap. 7,700M  (USD)
Industry Semiconductors
Sector Technology

Patents

Trademarks

300 0
15 0
843 0
0
 
Last Patent 2022 - Circuits and group iii-nitride t...
First Patent 1988 - Chemical vapor desposition of si...

Subsidiaries

9 subsidiaries with IP (138 patents, 0 trademarks)

2 subsidiaries without IP

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Latest Inventions, Goods, Services

2022 Invention Packaged electronic devices having substrates with thermally conductive adhesive layers. A packag...
Invention Devices incorporating stacked wire bonds and methods of forming the same. A packaged semiconducto...
Invention Radio frequency transistor amplifiers having widened and/or asymmetric source/drain regions for i...
2021 Invention Trench semiconductor devices with trench bottom shielding structures. Semiconductor devices and m...
Invention Rf transistor amplifier package. RF transistor amplifiers an RF transistor amplifier die having a...
Invention Power silicon carbide based semiconductor devices with improved short circuit capabilities and me...
Invention Power semiconductor devices having multilayer gate dielectric layers that include an etch stop/fi...
Invention Multi-zone radio frequency transistor amplifiers. RF transistor amplifiers include an RF transist...
Invention Radio frequency transistor amplifier package. A radio frequency (RF) transistor amplifier package...
Invention Multi-stage decoupling networks integrated with on-package impedance matching networks for rf pow...
Invention Radio frequency amplifier implementing an input baseband enhancement circuit and a process of imp...
Invention Rf amplifiers having shielded transmission line structures. RF transistor amplifiers include an R...
Invention Methods for pillar connection on frontside and passive device integration on backside of die. An ...
Invention Circuits and group iii-nitride transistors with buried p-layers and controlled gate voltages and ...
Invention Group iii-nitride transistors with back barrier structures and buried p-type layers and methods t...
Invention Trenched power device with segmented trench and shielding. A semiconductor device includes a semi...
Invention Barrier layers for electrical contact regions. Power switching devices include a semiconductor la...
Invention Conduction enhancement layers for electrical contact regions in power devices. Power switching de...
Invention Semiconductor power devices having gate dielectric layers with improved breakdown characteristics...
Invention Semiconductor power devices having graded lateral doping and methods of forming such devices. A s...
Invention Rf amplifier devices and methods of manufacturing. A transistor amplifier includes a semiconducto...
Invention Group iii nitride-based radio frequency transistor amplifiers having source, gate and/or drain co...
Invention Group iii nitride-based radio frequency amplifiers having back side source, gate and/or drain ter...
Invention Multi level radio frequency (rf) integrated circuit components including passive devices. A multi...
Invention Rf amplifier package. An integrated circuit device package includes a substrate, a first die comp...
Invention Stacked rf circuit topology using transistor die with through silicon carbide vias on gate and/or...
Invention Semiconductor die with improved edge termination. A semiconductor die includes a drift region, an...
Invention Active control of light emitting diodes and light emitting diode displays. Synchronization for li...
Invention Device carrier configured for interconnects, a package implementing a device carrier having inter...
Invention Group iii hemt and capacitor that share structural features. e.ge.g., source, gate, or drain cont...
Invention Dislocation distribution for silicon carbide crystalline materials. Silicon carbide (SiC) wafers,...
2020 Invention Large diameter silicon carbide wafers. Silicon carbide (SiC) wafers and related methods are discl...
Invention Submount structures for light emitting diode packages. Submount structures for light-emitting dio...
Invention Semiconductors having die pads with environmental protection and process of making semiconductors...
Invention Semiconductors with improved thermal budget and process of making semiconductors with improved th...
Invention Texturing for high density pixelated-led chips. A pixelated-LED chip includes an active layer wit...
Invention Stepped field plates with proximity to conduction channel and related fabrication methods. A tran...
Invention Semiconductor device with improved short circuit withstand time and methods for manufacturing the...
Invention Light emitting diode package with a plurality of lumiphoric regions. Solid-state lighting devices...
Invention Radio frequency transistor amplifiers having engineered intrinsic capacitances for improved perfo...
Invention Systems and processes for increasing semiconductor device reliability. A system configured to inc...
Invention Overcurrent protection for power transistors. Support circuitry for a power transistor includes a...
Invention Light emitting diode packages. Solid-state light emitting devices including light-emitting diodes...
Invention High electron mobility transistors and power amplifiers including said transistors having improve...
Invention Methods for dicing semiconductor wafers and semiconductor devices made by the methods. A method f...
Invention Device design for short-circuit protection of transistors. A transistor semiconductor die include...
Invention Hybrid power module. A power module includes a plurality of power semiconductor devices. The plur...
2019 Invention Circuits and methods for controlling bidirectional cllc converters. A bidirectional power convert...
Invention Contact and die attach metallization for silicon carbide based devices and related methods of spu...