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2023
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Invention
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Epitaxial wafer, and method for producing same. 232233-based single crystal to grow on a main sur... |
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Invention
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Method for growing single crystal, method for producing semiconductor substrate, and semiconducto... |
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Invention
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Method for growing β-ga2o3-based single crystal film. 23232323222 gas. |
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Invention
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Schottky barrier diode.
A Schottky barrier diode includes a semiconductor layer of a first condu... |
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Invention
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Semiconductor substrate. Provided is a semiconductor substrate composed of a gallium oxide semico... |
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Invention
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Single crystal manufacturing apparatus and method.
A single crystal manufacturing apparatus to g... |
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Invention
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Fin-type field effect transistor. Provided is a fin-type field effect transistor 1 comprising: a ... |
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Invention
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Schottky barrier diode.
A Schottky barrier diode includes an n-type semiconductor layer includin... |
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Invention
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Field effect transistor. The present invention provides a field effect transistor 1 which is prov... |
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Invention
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Field effect transistor.
A field-effect transistor includes an n-type semiconductor layer that i... |
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2022
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Invention
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Junction barrier schottky diode and method for manufacturing same. Provided are a junction barrie... |
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Invention
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Single crystal growth apparatus.
A single crystal growth apparatus to grow a single crystal of a... |
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Invention
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P-n junction diode. xy1-x-y2322x1-x222xy1-x-y22 (0 < x ≤ 1, 0 ≤ y < 1, 0 < x+y ≤ 1) and CuO, and ... |
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Invention
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Semiconductor substrate, semiconductor wafer, and method for manufacturing semiconductor wafer. P... |
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2021
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Invention
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Gallium oxide diode. 2323232323233 layer 10 and the oxide semiconductor layer 11. |
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Invention
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Schottky diode. 2323x1-x1-xN (x>0). |
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Invention
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Β-ga2o3-based single crystal film and method of manufacturing same. 23232323232323223233-based su... |
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Invention
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Single crystal manufacturing apparatus and method. A single crystal manufacturing apparatus to gr... |
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Invention
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Semiconductor film and method for manufacturing same.
A method for manufacturing a semiconductor... |
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Invention
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Semiconductor film and method for manufacturing same. 2323233-based single crystal, on the growth... |
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Invention
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Semiconductor substrate and method for manufacturing same.
A semiconductor substrate includes a ... |
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Invention
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Field-effect transistor and method for designing same. 3-based semiconductor layer between the so... |
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Invention
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Gallium oxide crystal manufacturing device. A gallium oxide crystal manufacturing device includes... |
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2020
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Invention
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Semiconductor device.
A semiconductor device includes a lead frame including a raised portion on... |
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Invention
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Semiconductor element, method for manufacturing semiconductor element, semiconductor device, and ... |
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Invention
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Semiconductor device. 2323233-based semiconductor, a cathode electrode 13 which is connected to t... |
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Invention
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Trench-type mesfet.
A trench-type MESFET includes an n-type semiconductor layer including a Ga2O... |
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Invention
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Trench type mosfet. 23tt of the trench 16 is within the range of 0.0125-0.25. |
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Invention
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Trench-type mesfet. 233-based monocrystal and that has a plurality of trenches 12 opening in one ... |
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Invention
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Single crystal ingot, crystal growth die, and single crystal production method. An as-grown singl... |
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Invention
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Schottky diode. 23233-based single crystal and comprising: an n-type semiconductor layer 11 havin... |
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2019
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Invention
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Schottky barrier diode. An object of the present invention is to provide a Schottky barrier diode... |
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Invention
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Schottky barrier diode. [Problem] To provide a Schottky barrier diode which is less vulnerable to... |
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Invention
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Schottky barrier diode. [Problem] To provide a Schottky barrier diode that is less vulnerable to ... |
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Invention
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Schottky barrier diode. [Problem] To provide a Schottky barrier diode in which a dielectric break... |
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Invention
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Trench mos schottky diode and method for producing same. 3-based single crystal, and includes a t... |
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Invention
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Trench mos schottky diode and method for producing same. 23233 single crystal and has a trench 12... |
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2018
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Invention
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Schottky barrier diode. A Schottky barrier diode includes a semiconductor substrate made of galli... |
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Invention
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Field effect transistor. 3-based single crystal and a plurality of trenches opening on one surfac... |
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Invention
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Schottky barrier diode. [Problem] To provide a Schottky barrier diode that is not susceptible to ... |
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Invention
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Field effect transistor. 2323233-based single crystal and having a plurality of trenches opened o... |
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Invention
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Diode. 3-based single crystal, and a p-type semiconductor layer including a p-type semiconductor ... |
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Invention
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Schottky barrier diode. 3-based single crystal, an anode electrode that forms a Schottky junction... |
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Invention
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Ga2o3-based semiconductor device. 3-based crystal layer. |
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Invention
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Trench mos schottky diode. 3-based single crystal and a trench opened on a surface thereof opposi... |
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Invention
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Schottky barrier diode. 3-based single crystal; an anode electrode 11 which forms a Schottky junc... |
