GLOBALFOUNDRIES U.S. Inc.

United States of America

 
Total IP 6,458
Total IP incl. subs 7,215 (+ 757 for subs)
Total IP Rank # 150
IP Activity Score 3.9/5.0    2,077
IP Activity Rank # 330
IP AS incl. subs 3.8/5.0    2,607
Parent Entity Globalfoundries Inc.

Patents

Trademarks

6,457 0
0 0
1 0
0
 
Last Patent 2024 - Waveguide cores surrounded by an...
First Patent 1991 - Method for making a superconduct...

Subsidiaries

5 subsidiaries with IP (757 patents, 0 trademarks)

6 subsidiaries without IP

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Latest Inventions, Goods, Services

2024 Invention Series inductors. The present disclosure relates to semiconductor structures and, more particula...
Invention Lateral bipolar transistor with gated collector. The present disclosure relates to semiconductor...
2023 Invention Retrofittable dry media abatement reactor. A system to abate an emission stream from a semiconduc...
2022 Invention Structure with substrate-embedded arrow waveguide and method. Disclosed are a structure with a su...
Invention Output buffer circuit. The present disclosure relates to a structure including a level shifter c...
Invention Transistor arrays with controllable gate voltage. Structures that include field-effect transisto...
Invention Non-volatile static random access memory bit cells with ferroelectric field-effect transistors. ...
Invention Input buffer with hysteresis-integrated voltage protection devices and receiver incorporating the...
Invention Waveguide cores surrounded by an airgap. Structures for an edge coupler and methods of forming a...
Invention Metal oxide semiconductor devices and methods of making thereof. A semiconductor device comprise...
Invention Fuse structure with metal heater and heat spreading structure for fuse body. A fuse structure in...
Invention Back bias control for always-on circuit section enabling leakage reduction during power saving mo...
Invention Bidirectional device. The present disclosure relates to semiconductor structures and, more parti...
Invention Photodiode with insulator layer along intrinsic region sidewall. A photodiode and a related meth...
Invention High-electron-mobility transistor. The present disclosure relates to semiconductor structures an...
Invention Identification system. The present disclosure relates to semiconductor structures and, more part...
Invention Lateral phototransistor. The present disclosure relates to semiconductor structures and, more pa...
Invention One-time programmable fuse using pn junction over gate metal layer, and related method. A one-ti...
Invention Optical components with one or more embedded bragg reflectors. Structures for an optical compone...
Invention Device with plasma induced damage (pid) protection. The present disclosure relates to semiconduc...
Invention Enlarged multilayer nitride waveguide for photonic integrated circuit. Structures and methods im...
Invention Ic structure with gate electrode fully within v-shaped cavity. An integrated circuit (IC) struct...
Invention Non-volatile memory structure with single cell or twin cell sensing. A non-volatile memory (NVM)...
Invention Moisture detection along input/output opening in ic structure. An integrated circuit (IC) struct...
Invention Gate structure over corner segment of semiconductor region. Embodiments of the disclosure provid...
Invention Heterojunction bipolar transistors with a cut stress liner. Structures for a heterojunction bipo...
Invention Array arrangements of vertical bipolar junction transistors. Structures that include bipolar jun...
Invention Bipolar junction transistor arrays. Structures that include bipolar junction transistors and met...
Invention Optical components with an adjacent metamaterial structure. Structures for an optical component,...
Invention Structure with back-gate having oppositely doped semiconductor regions. Embodiments of the discl...
Invention Structure with buried doped region and methods to form same. The disclosure provides a structure...
Invention Structures with buried fluidic channels. The present disclosure relates to semiconductor structu...
Invention Ion-sensitive field-effect transistors with local-field bias. Structures for an ion-sensitive fi...
Invention Integrated structure with trap rich regions and low resistivity regions. The present disclosure ...
Invention Compound-semiconductor waveguides with airgap cladding. Structures for a waveguide and methods o...
Invention Self-aligned double patterning with mandrel manipulation. Structures with features formed by sel...
Invention E-fuse with metal fill. The present disclosure relates to semiconductor structures and, more par...
Invention Transistor with metal field plate contact. The present disclosure relates to semiconductor struc...
Invention Cavity-mounted chips with multiple adhesives. Structures for a cavity-mounted chip and methods o...
Invention System and method for detecting a defect in a specimen. The present disclosure generally relates...
Invention Heterojunction bipolar transistor with amorphous semiconductor regions. The present disclosure r...
Invention Structure with inductor embedded in bonded semiconductor substrates and methods. Disclosed is a ...
Invention Photonic structure with waveguide-to-photodetector coupler oriented along sidewall of a photodete...
Invention One time programmable device. The present disclosure relates to semiconductor structures and, mo...
Invention Resistive memory elements accessed by bipolar junction transistors. Structures that include resi...
Invention Ion-sensitive field effect transistor above microfluidic cavity for ion detection and identificat...
Invention Metal oxide semiconductor devices and integration methods. A semiconductor device comprises a se...
Invention Structure and method for memory element to confine metal with spacer. The disclosure provides a ...
Invention Structure with polarization device with light absorber with at least a hook shape. A structure i...