METHOD TO IMPLEMENT HALF WIDTH MODES IN DRAM AND DOUBLING OF BANK RESOURCES
Registre | Brevet USPTO |
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Numéro d'application | 17944980 |
Statut | En instance |
Date de dépôt | 2022-09-14 |
Date de la première publication | 2023-01-19 |
Date de publication | 2023-01-19 |
Propriétaire | Intel Corporation (USA) |
Inventeur(s) | Bains, Kuljit S. |
Abrégé
Methods and apparatus implementing half width modes in DRAM and doubling of bank resources. DRAM devices, such as LPDDR6 SDRAM dies include multiple memory banks configured in memory groups and include I/O interface circuitry for first and second memory channels. A DRAM device may be selectively operated in a first half-width mode under which DQ lines for a partial memory channel operate as a first half-width DQ data bus. When operated in the first half-width mode, the partial memory channel is enabled to access all the memory banks on the DRAM. The DRAM device may also be selectively operated in a second half-width mode under which DQ lines for first and second partial memory channels operate as independent half-width DQ data buses. In this mode, each partial memory channel enables access to a respective portion of the memory banks.Classes IPC ?
- G11C 11/4096 - Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
- G11C 11/4076 - Timing circuits