SOURCE/DRAIN CONTACTS FOR NON-PLANAR TRANSISTORS

Abrégé

The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.

Classes IPC  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
• H01L 29/66 - Types of semiconductor device
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H01L 21/283 - Deposition of conductive or insulating materials for electrodes
• H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/45 - Ohmic electrodes