The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound for forming a metal-containing film includes at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and one or more kinds of ligand derived from compounds represented by the following general formulae (1-A) to (1-D). This can provide: a metal compound having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.
The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound for forming a metal-containing film includes at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and one or more kinds of ligand derived from compounds represented by the following general formulae (1-A) to (1-D). This can provide: a metal compound having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.
H01L 21/308 - Traitement chimique ou électrique, p.ex. gravure électrolytique en utilisant des masques
C07F 5/00 - Composés contenant des éléments des groupes 3 ou 13 de la classification périodique
G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
The present invention provides: a thermally conductive sheet product wherein both surfaces of a fluorine rubber-based thermally conductive sheet are protected from foreign substances and the like, and excellent setting workability is achieved between a heat generation member and a heat dissipation member; and a method for producing this thermally conductive sheet product.
The present invention provides: a thermally conductive sheet product wherein both surfaces of a fluorine rubber-based thermally conductive sheet are protected from foreign substances and the like, and excellent setting workability is achieved between a heat generation member and a heat dissipation member; and a method for producing this thermally conductive sheet product.
A thermally conductive sheet product which is obtained by bonding electrically insulating films to both surfaces of a thermally conductive sheet that is formed of a cured product of a thermally conductive fluorine-containing curable composition containing
(A) a linear polyfluoro compound which comprises two or more alkenyl groups in each molecule, while having a perfluoro polyether structure in the main chain,
(B) a fluorine-containing organohydrogen siloxane which comprises a perfluoroalkyl group or a perfluorooxyalkyl group in each molecule, or alternatively comprises a perfluoroalkylene group or a perfluorooxyalkylene group, while additionally containing two or more groups (SiH groups), wherein a hydrogen atom is directly bonded to a silicon atom, in each molecule, and which does not comprise an alkoxy group that is directly bonded to a silicon atom in the molecule.
(C) a platinum group metal-based catalyst and
(D) a specific amount of a thermally conductive filler.
B32B 27/08 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique d'une résine synthétique d'une sorte différente
B32B 27/36 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyesters
B32B 33/00 - Produits stratifiés caractérisés par des propriétés particulières ou des caractéristiques de surface particulières, p.ex. par des revêtements de surface particuliers; Produits stratifiés conçus pour des buts particuliers non couverts par une seule autre classe
B32B 37/24 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par les propriétés des couches avec au moins une couche qui ne présente pas de cohésion avant la stratification, p.ex. constituée de matériau granulaire projeté sur un substrat
B32B 37/26 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par les propriétés des couches avec au moins une couche influençant la liaison au cours de la stratification, p.ex. couches anti-adhésives ou couches égalisatrices de la pression
B32B 38/00 - Opérations auxiliaires liées aux procédés de stratification
3.
Composition For Forming Silicon-Containing Resist Underlayer Film And Patterning Process
The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol % or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.
The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol % or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.
NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, AND METHOD FOR MANUFACTURING NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY
A negative electrode active material for non-aqueous electrolyte secondary battery, the material including a negative electrode active material particle, wherein the particle contains a silicon compound particle containing a silicon compound containing oxygen, at least part of a surface of the compound particle is coated with carbon layer, the compound particle contains Li2SiO3 as a Li silicate, the Li2SiO3 is a material wherein at least a part of the Li2SiO3 is to change into Li4SiO4 by charging and discharging the particle once or more, and an abundance ratio of the Li2SiO3 is higher than that of the Li4SiO4 before charging and discharging the particle, and the abundance ratio of the Li4SiO4 is higher than that of the Li2SiO3 after charge and discharge at 100 times. Provided is a material that can achieve increase in battery capacity with improvement of initial efficiency, sufficient battery cycle characteristics, and input characteristics.
H01M 4/02 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/587 - Matériau carboné, p.ex. composés au graphite d'intercalation ou CFx pour insérer ou intercaler des métaux légers
5.
INORGANIC-TIN EMULSION COMPOSITION AND METHOD FOR PRODUCING SAME
The present invention relates to an inorganic-tin emulsion composition characterized by comprising (A) 100 parts by mass of an inorganic tin compound, (B) 5-100 parts by mass of a hydrocarbon oil, (C) 5-50 parts by mass of a surfactant, and (D) 50-2,000 parts by mass of water. Thus, an inorganic-tin emulsion having good storage stability and a method for producing the inorganic-tin emulsion are provided.
Provided is an alkyl-glycerin co-modified branched organopolysiloxane (polyglycerin-modified silicone in which a silicone chain and an alkyl chain are branched at a silicone main chain) having long-chain alkyl groups, glycerin groups, and branched-chain silicone groups, wherein: the organopolysiloxane is an organosiloxane in which the proportions of siloxane units having long-chain alkyl groups, siloxane units having glycerin groups, and siloxane units having branched-chain silicone groups, the chain length of the organopolysiloxane, the ratio of siloxane units, the amount of long-chain alkyl groups, and the amount of glycerin groups are specified; when the organopolysiloxane is blended with a composition containing a powder, the dispersibility and dispersion stability are excellent; and when the organopolysiloxane is blended with a cosmetic, a cosmetic having excellent spreadability and blendability with the skin as well as exceptional stability over time is obtained even when the cosmetic contains an oil-soluble UV absorber.
A nitride semiconductor substrate including: a composite substrate with multiple layers stacked, a silicon oxide layer or a TEOS layer having a central flat surface and a side surface around the flat surface and stacked on the composite substrate; a single crystal silicon layer stacked on the silicon oxide layer or the TEOS layer, and a nitride semiconductor thin film deposited on the single crystal silicon layer, wherein the entire central flat surface of the silicon oxide layer or the TEOS layer is covered with the single crystal silicon layer.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
The present invention is a clean room including a stocker area in which an article management storage is installed, in which the article management storage includes an upper opening part and a lower flow-out port configured to adjust the aperture ratio, a ceiling of the stocker area includes an eyelid and an air outlet port, the upper opening part of the article management storage and the air outlet port are connected to each other so as to be surrounded by the eyelid, and the clean room is configured that air supplied from the air outlet port is directly supplied into the article management storage through the upper opening part and is discharged from the lower flow-out port. This can provide the clean room that can keep the inside of the article management storage clean with almost no additional cost and without reducing the storing volume in the article management storage.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p.ex. entre différents postes de travail
F24F 3/167 - Salles blanches, c. à d. enceintes closes dans lesquelles un flux uniforme d’air filtré est distribué
F24F 13/06 - Bouches pour diriger ou distribuer l'air dans des pièces ou enceintes, p.ex. diffuseur d'air de plafond
9.
THERMALLY CONDUCTIVE SILICONE COMPOSITION, CURED PRODUCT THEREOF, AND METHOD FOR PRODUCING SAME
This thermally conductive silicone composition contains (A) an organopolysiloxane, (B) an aluminum oxide powder, (C) an amorphous aluminum nitride powder having a BET specific surface area of 1.0-4.0 m2/g and an average particle diameter of 0.5-5 μm, and (D) an organopolysiloxane having, in one molecule, at least one silyl group represented by general formula (1) -SiR1aa(OR23-a3-a, and having a viscosity of 0.01-30 Pa·s at 25 °C. The thermally conductive silicone composition is particularly suitable as a heat dissipation member for an electronic component and has excellent insulation properties and thermal conductivity.
The present invention pertains to an epitaxial wafer having a silicon epitaxial film on a silicon single-crystalline substrate having a resistivity of 10-5000 Ω·cm, wherein the carbon atom concentration in the silicon epitaxial film is at least 5×1017atoms/cm3and less than 2×1019atoms/cm3, and carbon defects are formed in the silicon epitaxial film. Accordingly, an epitaxial wafer and an SOI wafer and a method for manufacturing same are provided, wherein the wafers can be manufactured with a small number of processes and easy processing processes without using a high-resistivity substrate and harmonics are more reliably reduced.
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p.ex. recuit, frittage
Automatic electronic component mounting machines, namely, machines for automatically mounting IC chips or other electronic components to printed wired boards, and parts and accessories thereof; machines for mounting IC chips to circuit boards, and parts and accessories thereof; LED wafer processing equipment, and parts and accessories thereof; LED wafer treatment equipment, and parts and accessories thereof; LED chip transferring machines, and parts and accessories thereof; machines for automatically mounting LED chips to printed wired boards, and parts and accessories thereof; machines for mounting LED chips to circuit boards, and parts and accessories thereof; stamps and plates for use in manufacturing LED chips; LED chip manufacturing machines, and parts and accessories thereof; LED manufacturing machines, and parts and accessories thereof; wafer processing machines, and parts and accessories thereof; wafer treatment machines, and parts and accessories thereof; laser processing machines and apparatus for glass processing, and parts and accessories thereof; glass processing machines and apparatus, and parts and accessories thereof; glassware manufacturing machines and apparatus; laser processing machines and apparatus for ceramic, and parts and accessories thereof; ceramic processing machines and apparatus, and parts and accessories thereof; chip transferring machines, and parts and accessories thereof; automatic electronic component mounting machines, namely, machines for automatically mounting chips to printed wired boards, and parts and accessories thereof; machines for mounting chips to circuit boards, and parts and accessories thereof; stamps and plates for use in manufacturing chips; chip manufacturing machines, and parts and accessories thereof; display manufacturing machines, and parts and accessories thereof; controllers for display manufacturing machines, and parts and accessories thereof; debonders, and parts and accessories thereof; plastic processing machines and apparatus, and parts and accessories thereof; laser processing machines for plastic processing, and parts and accessories thereof; exposure apparatus for use in display manufacturing, and parts and accessories thereof; laser processing machines for printed circuit board manufacturing, and parts and accessories thereof; processing machines for printed circuit board manufacturing, and parts and accessories thereof; bonders, and parts and accessories thereof; mass transfer equipment, and parts and accessories thereof; memory chip manufacturing machines, and parts and accessories thereof; lift equipment, and parts and accessories thereof; laser lift off equipment, and parts and accessories thereof; semiconductor manufacturing machines with laser, and parts and accessories thereof; printed circuit board manufacturing machines with laser, and parts and accessories thereof; device for marking objects with laser beam; laser welding machines; machines for debonding electronic components from boards by laser irradiating laminated components, and parts and accessories thereof; metalworking machines and tools, and parts and accessories thereof; laser processing machines for metalworking, and parts and accessories thereof; laminated semiconductor chip manufacturing machines, and parts and accessories thereof; electronic components feeding devices for use in manufacturing electronic circuit boards, and parts and accessories thereof; stamps and plates for use in manufacturing electronic components and micro computer chips; electronic components manufacturing machines, and parts and accessories thereof; semiconductor wafer processing equipment, and parts and accessories thereof; semiconductor wafer treatment equipment, and parts and accessories thereof; semiconductor chip transferring machines, and parts and accessories thereof; semiconductor substrate manufacturing machines, and parts and accessories thereof; jigs for semiconductor substrate, and parts and accessories thereof; jigs for boards of semiconductor manufacturing machines, and parts and accessories thereof; semiconductor manufacturing machines, and parts and accessories thereof; processing machines for semiconductor manufacturing, and parts and accessories thereof; laser processing machines for semiconductor manufacturing, and parts and accessories thereof; semiconductor manufacturing machines and apparatus, and parts and accessories thereof; thermal treating equipment for semiconductor manufacturing, and parts and accessories thereof; components mounting machines for semiconductor manufacturing, and parts and accessories thereof
12.
PASTE-LIKE SILICONE COMPOSITION, METHOD FOR PRODUCING THE SAME, AND COSMETICS
A paste-like silicone composition includes (A) crosslinked organopolysiloxane and (B) oil in a liquid state at 25° C. The component (A) includes a hydrosilylated reaction product of (A-1) organohydrogenpolysiloxane having at least two hydrogen atoms bonded to a silicon atom per molecule, and (A-2) alkenyl group-containing organopolysiloxane having at least two alkenyl groups having 2 to 10 carbon atoms and being bonded to a silicon atom per molecule. Octamethylcyclotetrasiloxane, decamethylcyclopentasiloxane, and dodecamethylcyclohexasiloxane contained in the paste-like silicone composition are each less than 2,000 ppm. It is therefore possible for a stable paste-like silicone composition that has small changes over time such as plasticization return and emit less uncomfortable odor.
The present invention relates to a resist composition and a pattern forming process. The quencher is capable of improving the LWR of line patterns or the dimensional uniformity (CDU) of hole patterns and enhancing sensitivity. The resist composition exhibits higher sensitivity and improved LWR and CDU regardless of whether it is of positive or negative tone, and a pattern forming process using the resist composition. The resist composition comprises a quencher containing a disulfonium salt having formula (1).
The present invention relates to a resist composition and a pattern forming process. The quencher is capable of improving the LWR of line patterns or the dimensional uniformity (CDU) of hole patterns and enhancing sensitivity. The resist composition exhibits higher sensitivity and improved LWR and CDU regardless of whether it is of positive or negative tone, and a pattern forming process using the resist composition. The resist composition comprises a quencher containing a disulfonium salt having formula (1).
The present invention is a material for forming an adhesive film for an adhesive film formed directly under a resist upper layer film, includes: (A) a resin having a structural unit containing an acid-dissociable group and having two or more units represented by the formula (1) where R1 represents a hydrogen atom or a methyl group, and R2 represents a group selected from the formulae (I-1) to (I-3); and (C) an organic solvent, and the material comprises (B) a photo-acid generator and/or the resin (A) having the photo-acid generating unit. This provides a material for forming an adhesive film in a fine patterning process by a multilayer resist method, where the material gives an adhesive film with high adhesiveness to a resist upper layer film, suppresses fine pattern collapse, and can form an excellent pattern profile; a patterning process using the material; and a method for forming the adhesive film.
The present invention is a material for forming an adhesive film for an adhesive film formed directly under a resist upper layer film, includes: (A) a resin having a structural unit containing an acid-dissociable group and having two or more units represented by the formula (1) where R1 represents a hydrogen atom or a methyl group, and R2 represents a group selected from the formulae (I-1) to (I-3); and (C) an organic solvent, and the material comprises (B) a photo-acid generator and/or the resin (A) having the photo-acid generating unit. This provides a material for forming an adhesive film in a fine patterning process by a multilayer resist method, where the material gives an adhesive film with high adhesiveness to a resist upper layer film, suppresses fine pattern collapse, and can form an excellent pattern profile; a patterning process using the material; and a method for forming the adhesive film.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
The present invention is a substrate for a semiconductor device, including: a high-resistant silicon single crystal substrate having a resistivity of 100 Ω·cm or more; a first buffer layer composed of an AlN layer and formed on the high-resistant silicon single crystal substrate; and a nitride semiconductor layer provided on the first buffer layer, wherein there is no low-resistivity portion on a top surface of the high-resistant silicon single crystal substrate, the low-resistivity portion having a resistivity relatively lower than the resistivity of an entirety of the high-resistant silicon single crystal substrate. This provides: a substrate for a semiconductor device that can impart good electric characteristics to a device; and a simple method for manufacturing such a substrate.
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
Provided is a thermally conductive silicone composition having a high thermal conductivity and satisfactory flowability. The thermally conductive silicone composition comprises the following components (A), (B), (C), and (D). Component (A): an organopolysiloxane having a dynamic viscosity of 10-10,000 mm2/s at 25°C; component (B): an organopolysiloxane which is different from the component (A) and has a dynamic viscosity of 1,000-100,000 mm2/s at 25°C; component (C): a thermally conductive filler having a thermal conductivity of 10 W/m·K or greater; and component (D): plate-like graphite particles having an average particle diameter of 5-300 μm, an ash content of 2.0 mass% or less, and an aspect ratio of 2-100.
The present invention is a laser peeling composition that includes a compound (I) with a hydroxyphenyl-triazine framework having a maximum absorption wavelength (λmax) in a wavelength range from 300 nm to 500 nm. Due to this configuration, a laser peeling composition is provided with which supports and substrates can be easily joined, substrates with high level differences can also be formed with uniform film thickness, step compatibility with TSV formation and wafer back surface wiring steps is high, and furthermore, chemical vapor deposition (CVD) wafer thermal process resistance is excellent, peeling of supports from substrates is also easy, resins can be removed without contamination of substrates, and productivity for thin substrates can be increased.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
B32B 27/00 - Produits stratifiés composés essentiellement de résine synthétique
B32B 27/18 - Produits stratifiés composés essentiellement de résine synthétique caractérisée par l'emploi d'additifs particuliers
The present invention is a method for producing a semiconductor substrate, said method comprising: a laser irradiation step for irradiating the surface of a 4H-SiC substrate with a laser beam and forming, within the 4H-SiC substrate, an amorphous layer obtained by amorphization of silicon and carbon; a joining step for joining, via a thin film, another support substrate and the 4H-SiC substrate which has been subjected to the laser irradiation step to obtain a joined substrate; a separation step for separating the 4H-SiC substrate at the amorphous layer of the joined substrate to cause separation into a bound substrate in which the surface layer of the 4H-SiC substrate as a 4H-SiC layer is transferred onto the support substrate and a separated substrate which has been obtained by separating the surface layer from the 4H-SiC substrate; an etching step for performing plasma etching on at least one of the separation surfaces of the bound substrate and of the separated substrate after the separation step; and an epitaxial step for performing epitaxial growth on at least one of the bound substrate and the separated substrate. Thus, a semiconductor substrate production method that makes it possible to produce a more inexpensive, high-quality semiconductor substrate is provided.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
B23K 26/57 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler le faisceau laser entrant dans une face de la pièce à travailler d’où il est transmis à travers le matériau de la pièce à travailler pour opérer sur une face différente de la pièce à travailler, p.ex. pour effectuer un enlèvement de matière, pour rac
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
19.
METHOD FOR MANUFACTURING SURFACE-TREATED SOL-GEL SILICA PARTICLE, SURFACE-TREATED SOL-GEL SILICA PARTICLE, AND TONER EXTERNAL ADDITIVE FOR ELECTROSTATIC CHARGE IMAGE DEVELOPMENT
A method for manufacturing a surface-treated sol-gel silica particle that can impart good flowability when added into a toner and has little change in charge during environment change; a manufacturing method therefor; and an external additive for a toner containing the surface-treated sol-gel silica particle. The method includes steps of: (A1) obtaining a hydrophilic sol-gel silica particle having a silanol group on a surface and substantially composed of a SiO2 unit; (A2) adding a compound having a (C2H5)3Si— group or a R1R22Si— group, and introducing a (C2H5)3SiO1/2 unit or a R1R22SiO1/2 unit on a surface of the hydrophilic sol-gel silica particle to obtain a preliminarily treated silica particle; and (A3) adding a compound having a R33Si— group, and further introducing a R33SiO1/2 unit on a surface of the preliminarily treated silica particle to obtain a surface-treated sol-gel silica particle.
An onium salt is provided. The chemically amplified resist composition can be processed by DUV or EUV lithography to form a resist pattern with improved resolution, reduced LWR, and collapse resistance. A resist composition comprising an onium salt having a nitrogen-containing aliphatic heterocycle and an aromatic carboxylic acid structure as a quencher is provided. When processed by deep-UV or EUV lithography, the resist composition exhibits a high resolution and reduced LWR and prevents the resist pattern from collapsing.
The present invention relates to a resist composition and a pattern forming process. The quencher is capable of improving the LWR of line patterns or the dimensional uniformity (CDU) of hole patterns and enhancing sensitivity. The resist composition comprises a quencher containing a sulfonium salt of a benzoic acid which is substituted with a C2-C14 hydrocarbyloxy group having a trifluoromethyl group.
A hydraulic composition comprising (A) a water-soluble hydroxyalkyl alkyl cellulose, (B) a polyacrylamide, (C) cement, (D) water, and (E) short fibers is suitable for 3D printing of the material extrusion process. The composition has satisfactory nozzle extrudability, self-support after lamination, and water retention. A method of manufacturing a three-dimensional object using the hydraulic composition is also provided.
The present invention is a method for forming a resist underlayer film, including: a coating step of coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; and a heating step of heating the coated substrate in an atmosphere having an oxygen concentration of less than 1 volume % at a temperature of 450° C. or higher and 800° C. or lower, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.
The present invention is a method for forming a resist underlayer film, including: a coating step of coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; and a heating step of heating the coated substrate in an atmosphere having an oxygen concentration of less than 1 volume % at a temperature of 450° C. or higher and 800° C. or lower, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
C09D 161/06 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols d'aldéhydes avec des phénols
G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
G03F 7/16 - Procédés de couchage; Appareillages à cet effet
H01L 21/308 - Traitement chimique ou électrique, p.ex. gravure électrolytique en utilisant des masques
Provided is a light-release additive for a release sheet, which contains an organopolysiloxane represented by formula (1). (In the formula, R1moieties each independently denote an unsubstituted or substituted alkyl group having 1-3 carbon atoms, R2moieties each independently denote a monovalent organic group which has 1-10 carbon atoms, has a hydroxyl group, an amino group or a carboxyl group, and may include a heteroatom, and R3 moieties each independently denote an unsubstituted or substituted monovalent hydrocarbon group having 4-20 carbon atoms. a, b and c are numbers that satisfy the relationships 2≤a≤150, 0≤9b+19c≤a, and 2≤a+b+c≤166)
C08L 33/04 - Homopolymères ou copolymères des esters
C08L 61/28 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des composés contenant de l'hydrogène lié à l'azote d'aldéhydes avec des composés hétéro cycliques avec la mélamine
C09D 133/00 - Compositions de revêtement à base d'homopolymères ou de copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un seul ra; Compositions de revêtement à base de dérivés de tels polymères
The present invention is a temporary adhesion material composition for peelably adhering a substrate and a support, the temporary adhesion material composition containing (A) an organopolysiloxane mixture that can be crosslinked by hydrosilylation, (B) an organopolysiloxane that does not cause hydrosilylation, (C) a catalyst, and (D) an organic solvent. When the temporary adhesion material composition is passed through a filter that has a pore size of 100 nm or smaller, the number of particles of a particle size of 100–1000 nm that remain after the filtration is no more than 20/ml. The present invention thereby provides a temporary adhesion material composition that includes few particles that can cause poor connection to a substrate surface (circuit formation surface) after cleaning.
The present invention provides a method for producing a thin wafer, wherein a thermosetting silicone resin composition is used for a temporary adhesive for wafer processing for temporary bonding a wafer to a supporting body. The method makes it possible to cure the thermosetting silicone resin composition by heating alone, the thermosetting silicone resin composition comprising the following components: (A) an organopolysiloxane that has two or more alkenyl groups in each molecule; (B) an organohydrogen polysiloxane that has two or more hydrogen atoms each bonded to a silicon atom (SiH groups) in each molecule; (C) an organic peroxide; and (D) a radical active hydrosilylation catalyst. Consequently, the present invention provides a method for producing a thin wafer, the method involving use of a temporary adhesive for wafer processing, the temporary adhesive exhibiting sufficient substrate retainability after bonding even if a substrate with large level difference is used, having high process adaptability to a wafer back grinding process, a TSV formation process and a wafer back wiring process, having excellent resistance to a wafer thermal process, having excellent long-term storage stability of a composition, and exhibiting stable substrate retainability, separability and residue cleanability from a substrate after separation with respect to any kind of substrate.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
27.
TEMPORARY ADHESIVE FOR WAFER PROCESSING, WAFER LAMINATE, AND METHOD FOR PRODUCING THIN WAFER
The present invention is a temporary adhesive for wafer processing for temporarily bonding a wafer to a support, said temporary adhesive for wafer processing being composed of a curable silicone resin composition that can be cured by means of a hydrosilylation reaction. The curable silicone resin composition contains a phenolic antioxidant not containing either of a phosphorus atom and a sulfur atom. In this way, a temporary adhesive for wafer processing is provided that has sufficient substrate-holding properties after wafer bonding, even when using a heavily stepped substrate, and has excellent wafer processing tolerance thereafter, excellent wafer releasability and particularly thermal stability of the wafer releasability after processing, and excellent cleaning removability after release. Also provided are a wafter laminate and a method for producing a thin wafer.
The present invention is a temporary adhesive containing a silicone-based resin that contains a silicone-based resin, and temporarily adheres a semiconductor substrate and a support, wherein, when the semiconductor substrate and the support are bonded together via a temporary adhesive layer formed by the temporary adhesive, and then the semiconductor substrate and the support are peeled off from each other after heating for two hours at 260°C, followed by dissolving the temporary adhesive layer remaining on the semiconductor substrate or the support in a 50°C dimethylpropionamide solution containing 3% by mass of tetrabutylammonium fluoride, the measurement of the dissolution speed of the temporary adhesive layer formed by the temporary adhesive performed at this time is 20 μm/minute or greater.
The present invention provides a defect evaluation method for a semiconductor substrate, the method being characterized by comprising: a first step for detecting defects on surfaces of a plurality of semiconductor substrates; a second step for acquiring microscopic images of the defects; a third step for conducting a component analysis as to whether the defects are Ni defects; a fourth step for classifying the types of the defects on the basis of the microscopic images and the result of the component analysis; a fifth step for machine-learning the microscopic images of the various types of the defects classified in the fourth step, by an image classification means; a sixth step for estimating the types of unknown defects by applying the image classification means subjected to machine learning in the fifth step, to microscopic images of the unknown defects; and a seventh step for stratifying and integrating the types of the unknown defects estimated in the sixth step into the Ni defects and non-Ni defects. Thus, a method for easily evaluating Ni defects on surfaces of semiconductor substrates is provided.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
G01N 23/2208 - Combinaison de plusieurs mesures, l'une au moins étant celle d’une émission secondaire, p.ex. combinaison d’une mesure d’électrons secondaires [ES] et d’électrons rétrodiffusés [ER] toutes les mesures portant sur l’émission secondaire, p.ex. combinaison de la mesure ES et des rayons X caractéristiques
G01N 23/2252 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM] en mesurant les rayons X émis, p.ex. microanalyse à sonde électronique [EPMA]
Automatic electronic component mounting machines, namely, machines for automatically mounting IC chips or other electronic components to printed wired boards, and parts and accessories thereof; machines for mounting IC chips to circuit boards, and parts and accessories thereof; LED wafer processing equipment, and parts and accessories thereof; LED wafer treatment equipment, and parts and accessories thereof; LED chip transferring machines, and parts and accessories thereof; machines for automatically mounting LED chips to printed wired boards, and parts and accessories thereof; machines for mounting LED chips to circuit boards, and parts and accessories thereof; stamps and plates for use in manufacturing LED chips; LED chip manufacturing machines, and parts and accessories thereof; LED manufacturing machines, and parts and accessories thereof; wafer processing machines, and parts and accessories thereof; wafer treatment machines, and parts and accessories thereof; laser processing machines and apparatus for glass processing, and parts and accessories thereof; glass processing machines and apparatus, and parts and accessories thereof; glassware manufacturing machines and apparatus; laser processing machines and apparatus for ceramic, and parts and accessories thereof; ceramic processing machines and apparatus, and parts and accessories thereof; chip transferring machines, and parts and accessories thereof; automatic electronic component mounting machines, namely, machines for automatically mounting chips to printed wired boards, and parts and accessories thereof; machines for mounting chips to circuit boards, and parts and accessories thereof; stamps and plates for use in manufacturing chips; chip manufacturing machines, and parts and accessories thereof; display manufacturing machines, and parts and accessories thereof; controllers for display manufacturing machines, and parts and accessories thereof; debonders, and parts and accessories thereof; plastic processing machines and apparatus, and parts and accessories thereof; laser processing machines for plastic processing, and parts and accessories thereof; exposure apparatus for use in display manufacturing, and parts and accessories thereof; laser processing machines for printed circuit board manufacturing, and parts and accessories thereof; processing machines for printed circuit board manufacturing, and parts and accessories thereof; bonders, and parts and accessories thereof; mass transfer equipment, and parts and accessories thereof; memory chip manufacturing machines, and parts and accessories thereof; lift equipment, and parts and accessories thereof; laser lift off equipment, and parts and accessories thereof; semiconductor manufacturing machines with laser, and parts and accessories thereof; printed circuit board manufacturing machines with laser, and parts and accessories thereof; device for marking objects with laser beam; laser welding machines; machines for debonding electronic components from boards by laser irradiating laminated components, and parts and accessories thereof; metalworking machines and tools, and parts and accessories thereof; laser processing machines for metalworking, and parts and accessories thereof; laminated semiconductor chip manufacturing machines, and parts and accessories thereof; electronic components feeding devices for use in manufacturing electronic circuit boards, and parts and accessories thereof; stamps and plates for use in manufacturing electronic components and micro computer chips; electronic components manufacturing machines, and parts and accessories thereof; semiconductor wafer processing equipment, and parts and accessories thereof; semiconductor wafer treatment equipment, and parts and accessories thereof; semiconductor chip transferring machines, and parts and accessories thereof; semiconductor substrate manufacturing machines, and parts and accessories thereof; jigs for semiconductor substrate, and parts and accessories thereof; jigs for boards of semiconductor manufacturing machines, and parts and accessories thereof; semiconductor manufacturing machines, and parts and accessories thereof; processing machines for semiconductor manufacturing, and parts and accessories thereof; laser processing machines for semiconductor manufacturing, and parts and accessories thereof; semiconductor manufacturing machines and apparatus, and parts and accessories thereof; thermal treating equipment for semiconductor manufacturing, and parts and accessories thereof; components mounting machines for semiconductor manufacturing, and parts and accessories thereof.
31.
COMPOSITION INCLUDING ORGANOSILICON COMPOUND, RUBBER COMPOUNDING AGENT, AND RUBBER COMPOSITION
When a composition including
(A) an organosilicon compound represented by formula 1 and
(B) when an organosilicon compound having at least one group selected from a polysulfide group, a thioester group, and a mercapto group and having an alkoxysilyl group is added to a rubber composition, a rubber composition is imparted that can achieve low fuel consumption and wear resistance while the workability of the composition and the hardness and tensile properties of cured products thereof are maintained.
When a composition including
(A) an organosilicon compound represented by formula 1 and
(B) when an organosilicon compound having at least one group selected from a polysulfide group, a thioester group, and a mercapto group and having an alkoxysilyl group is added to a rubber composition, a rubber composition is imparted that can achieve low fuel consumption and wear resistance while the workability of the composition and the hardness and tensile properties of cured products thereof are maintained.
When a composition including
(A) an organosilicon compound represented by formula 1 and
(B) when an organosilicon compound having at least one group selected from a polysulfide group, a thioester group, and a mercapto group and having an alkoxysilyl group is added to a rubber composition, a rubber composition is imparted that can achieve low fuel consumption and wear resistance while the workability of the composition and the hardness and tensile properties of cured products thereof are maintained.
(R1 and R2 independently represent an alkyl group or an aryl group, R3 represents a hydrogen atom, an alkyl group, or an aryl group, R4 independently represents a hydrogen atom or a hydrocarbon group that may have a substituent other than a sulfur atom-containing group and may include a heteroatom other than a sulfur atom (adjacent R4 may crosslink with one another to form a ring), Z represents a divalent group not having a polysulfide group, a thioester group, or a mercapto group, and n represents an integer of 1-3.)
The film is formed using one of two film-forming materials. The first film-forming material contains: particles containing a crystal phase of a rare earth element fluoride; particles containing a crystal phase of a rare earth element oxide; and particles containing a crystal phase of a rare earth element ammonium fluoride double salt. The second film-forming material contains: particles containing a crystal phase of a rare earth element fluoride; and particles containing a crystal phase of a rare earth element oxide and a crystal phase of a rare earth element ammonium fluoride double salt. If a spray coated film is to be formed by means of thermal spraying using this film-forming material or film-forming slurry in particular, it is possible to form a rare earth element oxyfluoride spray coated film without the need for excessive heat.
The inventive cosmetic includes; (A) organosiloxane represented by the following formula (1), and having a boiling point in a range of 205 to 255° C. and a kinematic viscosity at 25° C. of less than 5 mm2/s; and (B) volatile oil having a kinematic viscosity at 25° C. of 2 mm2/s or less, excluding the component (A).
The inventive cosmetic includes; (A) organosiloxane represented by the following formula (1), and having a boiling point in a range of 205 to 255° C. and a kinematic viscosity at 25° C. of less than 5 mm2/s; and (B) volatile oil having a kinematic viscosity at 25° C. of 2 mm2/s or less, excluding the component (A).
The inventive cosmetic includes; (A) organosiloxane represented by the following formula (1), and having a boiling point in a range of 205 to 255° C. and a kinematic viscosity at 25° C. of less than 5 mm2/s; and (B) volatile oil having a kinematic viscosity at 25° C. of 2 mm2/s or less, excluding the component (A).
wherein, R each independently may be identical to or different from one another and represents a group selected from the group consisting of a hydrogen group, a hydroxy group, and a monovalent hydrocarbon group having 1 to 3 carbon atoms. “a” is an integer from 1 to 5. It is provided that at least one of R is a monovalent hydrocarbon group having 2 or 3 carbon atoms. This cosmetic can provide a light feeling, good spreadability and a uniform cosmetic film, and exhibit excellent stability over time and excellent cosmetic durability.
(A)(A) of 100 to 100,000 mPa•s at 25°C, represented by formula (1): (1): HO - (SiR12aa - H (where R1is an independently unsubstituted or substituted monovalent hydrocarbon group having a carbon number from 1 to 10, and a is an integer of 50 or greater), (B) a hydrolyzable organosilane compound and/or a partial hydrolytic condensation thereof represented by formula (2): (2) (where R2 is a monovalent hydrocarbon group having a carbon number from 1 to 10, n is any integer from 1 to 8, and m is 3 or 4), (C) a curing catalyst (excluding organotin compounds), and (D) a bleed oil. The room-temperature-curable organopolysiloxane composition is free of organotin compounds, which are problematic in terms of environmental safety and hygiene, does not generate methylethyl ketone oxime (MEKO) during curing, and has excellent rapid curing properties. Furthermore, the cured coating film obtained is excellent in rubber strength and surface smoothness and demonstrates excellent antifouling performance for a long period of time.
As a silicone composition that can provide a silicone grease having a high thermal conductivity and excellent adhesiveness as compared to conventional silicone greases, provided is a silicone composition comprising: (A) an organopolysiloxane having at least two aliphatic unsaturated hydrocarbon groups per molecule and having a kinematic viscosity of 60-100,000 mm2/s at 25°C; (B) a hydrolyzable organopolysiloxane represented by general formula (1); (C) at least one thermally conductive filler selected from the group consisting of metal oxides or metal nitrides; (D) an organohydrogen polysiloxane represented by general formula (2); (E) an organohydrogen polysiloxane represented by general formula (3); (F) a hydrolyzable organopolysiloxane represented by general formula (4); (G) a platinum group metal catalyst; and (H) a reaction control agent.
A sulfonium salt consisting of a carboxylate anion having a hydroxy group and fluorine or trifluoromethyl at α- or β-position and a phenyldibenzothiophenium cation having a hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group has a high decomposition efficiency and a high acid diffusion controlling ability upon exposure. A resist composition comprising the sulfonium salt offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
[Problem] An object of the present invention is to provide an aqueous dispersion of silicone rubber spherical particles having excellent oil absorptiveness, relative to certain oil materials, specifically hydrocarbon oils or ester oils, and cosmetics to which the aqueous dispersion is added, having excellent use feeling, finish, adherence, and sebum resistance.
[Problem] An object of the present invention is to provide an aqueous dispersion of silicone rubber spherical particles having excellent oil absorptiveness, relative to certain oil materials, specifically hydrocarbon oils or ester oils, and cosmetics to which the aqueous dispersion is added, having excellent use feeling, finish, adherence, and sebum resistance.
[Solutions to the problems] An aqueous dispersion of silicone rubber particles comprising (A) a silicone rubber particle being an addition reaction product of (A-1) an organohydrogenpolysiloxane and (A-2) an organopolysiloxane having a monovalent olefin hydrocarbon group, wherein at least one of component (A-1) and component (A-2) has monovalent aliphatic saturated hydrocarbon groups having 6 to 30 carbon atoms, each bonded to a silicon atom, in a percentage of 5% to 70%, based on the total number of all substituents each bonded to a silicon atom, in an amount of 5% by mass to 80% by mass, based on a total mass of the aqueous dispersion; (B) at least one surfactant in an amount of 0.01% by mass to 15% by mass, based on a total mass of the aqueous dispersion; and (C) water in an amount of 19% by mass to 94% by mass, based on a total mass of the aqueous dispersion.
C08L 83/14 - Compositions contenant des composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du silicium, avec ou sans soufre, azote, oxygène ou carbone; Compositions contenant des dérivés de tels polymères dans lesquels au moins deux atomes de silicium, mais pas la totalité sont liés autrement que par des atomes d'oxygène
Provided are a furanyl group-containing organopolysiloxane that is flexible due to (poly)siloxane and contains furanyl groups having photocrosslinkability. The furanyl group-containing organopolysiloxane is represented by the following average composition formula (1), and has a number average molecular weight of 500 to 40,000,
Provided are a furanyl group-containing organopolysiloxane that is flexible due to (poly)siloxane and contains furanyl groups having photocrosslinkability. The furanyl group-containing organopolysiloxane is represented by the following average composition formula (1), and has a number average molecular weight of 500 to 40,000,
wherein R1 represents a monovalent hydrocarbon group, etc., or a furanyl group expressed by the following general formula (2) or (3), in which at least one R per molecule is the furanyl group expressed by the following general formula (2) or (3); a is a number of not smaller than 2, b is a number of not smaller than 0, c is a number of not smaller than 0, d is a number of not smaller than 0, and a, b, c and d satisfy 2≤a+b+c+d≤1,000,
Provided are a furanyl group-containing organopolysiloxane that is flexible due to (poly)siloxane and contains furanyl groups having photocrosslinkability. The furanyl group-containing organopolysiloxane is represented by the following average composition formula (1), and has a number average molecular weight of 500 to 40,000,
wherein R1 represents a monovalent hydrocarbon group, etc., or a furanyl group expressed by the following general formula (2) or (3), in which at least one R per molecule is the furanyl group expressed by the following general formula (2) or (3); a is a number of not smaller than 2, b is a number of not smaller than 0, c is a number of not smaller than 0, d is a number of not smaller than 0, and a, b, c and d satisfy 2≤a+b+c+d≤1,000,
wherein R2 or R3 represents a hydrogen atom, or a monovalent hydrocarbon group, etc.; the broken lines represent bonds.
C08G 77/14 - Polysiloxanes contenant du silicium lié à des groupes contenant de l'oxygène
B01J 23/46 - Ruthénium, rhodium, osmium ou iridium
C08G 77/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone
Provided are an organopolysiloxane in which arrangements of diphenylsiloxy units in the siloxane sequence are controlled to achieve a low proportion of arrangements where the diphenylsiloxy unit-containing siloxanes are consecutive; and a method for producing such organopolysiloxane. The organopolysiloxane is such that low-molecular siloxanes having a weight-average molecular weight of not higher than 700 are contained at a ratio of not larger than 10% by mass, and that a proportion of arrangements where diphenylsiloxy units are consecutive relative to all diphenylsiloxy units is not higher than 5 mol %.
C08G 77/08 - Procédés de préparation caractérisés par les catalyseurs utilisés
C08G 77/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone
40.
ORGANOALKOXYSILANE-CONTAINING COMPOSITION AND METHOD FOR MANUFACTURING THE SAME, AND WATER-ABSORPTION INHIBITOR
An organoalkoxysilane-containing composition including: (A) an organohydrogenpolysiloxane having a structural unit selected from the group consisting of SiO2, HSiO1.5, R1SiO1.5, R1HSiO, R12SiO, R12HSiO0.5, and R13SiO0.5; (B) an organopolysiloxane having a structural unit selected from the group consisting of SiO2, R2SiO1.5, R1SiO1.5, R1R2SiO, R12SiO, R13SiO0.5, and R12R2SiO0.5, wherein R1 represents a monovalent hydrocarbon group except for an aliphatic unsaturated group, and R2 represents an alkenyl group; and (C) an organoalkoxysilane represented by R3aSi(OR4)4-a and/or a partial hydrolytic condensate thereof, wherein an amount of (C) is 100 to 10,000 parts by mass relative to 100 parts by mass of a total amount of (A) and (B). This provides a composition that can be a water-absorption inhibitor that can impart an excellent water-absorption inhibiting property to a surface of a structural material.
B05D 5/08 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir une surface antifriction ou anti-adhésive
C08L 101/10 - Compositions contenant des composés macromoléculaires non spécifiés caractérisées par la présence de groupes déterminés contenant des groupes silane hydrolysables
The present invention is a film formation nozzle that supplies, to a base surface, a mixture of a carrier gas and a raw material mist obtained by atomizing a liquid raw material, said film formation nozzle being characterized by having a supply port into which the mixture flows and a discharge port which is spatially connected to the supply port and from which the mixture flows out, wherein an inner surface of the film formation nozzle in a flow path of the mixture from the supply port to the discharge port is covered with a coating of a material that differs from a base material which forms a base structure of the film formation nozzle. Thus, provided are a film formation nozzle and a film formation device that make it possible to stably produce a high-quality film in which impurity contamination, foreign object (particle) adhesion, and abnormal growth are significantly reduced.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/365 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
H01L 21/368 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt liquide
42.
TEMPORARY ADHESIVE FOR WAFER PROCESSING, WAFER PROCESSED BODY, AND METHOD FOR MANUFACTURING THIN WAFER
The present invention is a temporary adhesive for wafer processing for temporarily bonding, to a support, a wafer that has a circuit-forming surface on a front surface and has a rear surface to be processed, the temporary adhesive comprising a composite temporary adhesive layer that has a two-layer structure of a first temporary adhesive layer that comprises a thermoplastic resin layer (A) and can be releasably bonded to the surface of the wafer, and a second temporary adhesive layer that is layered on the first temporary adhesive layer and comprises a thermosetting siloxane polymer layer (B). Thus, the present invention provides a temporary adhesive for wafer processing that has stable wafer processing characteristics and excellent releasability with respect to the support without being affected by surface treatment of the wafer substrate, and also allows for easy removal by washing of the temporary adhesive layer after release from the support. Said temporary adhesive for wafer processing can also be formed in a uniform film thickness on a substrate that has high level differences, is adaptable to TSV forming and wafer rear surface wiring processes, and further has excellent resistance to wafer thermal processes such as chemical vapor deposition (CVD), and can increase productivity of thin wafers.
Provided is a triazine compound represented by formula (1). [In the formula, each of R1-R3is independently a hydrogen atom, an alkyl group, or a group represented by formula (2) or formula (3), and at least one thereof is a group represented by formula (3). (In the formulae: each R4is independently a hydrogen atom or a C1-C7 alkyl group; R5 is a C1-C12 alkyl group; and n is an integer of 1-5.)]
C07D 251/24 - Composés hétérocycliques contenant des cycles triazine-1, 3, 5 non condensés avec d'autres cycles comportant trois liaisons doubles entre chaînons cycliques ou entre chaînons cycliques et chaînons non cycliques avec des atomes d'hydrogène ou de carbone liés directement à au moins un atome de carbone du cycle à trois atomes de carbone du cycle
A patterning process capable of readily and efficiently forming a fine pattern without damaging a substrate is provided. The patterning process includes: forming an organic underlayer film, a tin-containing middle layer film, and an upper layer resist film on a substrate to be processed; forming an upper layer resist pattern; transferring the upper layer resist pattern to the tin-containing middle layer film, and forming an organic underlayer film pattern on an upper portion of which a portion of the tin-containing middle layer film is left; removing the portion of the tin-containing middle layer film by dry-etching; forming an inorganic silicon-containing film so as to cover the organic underlayer film pattern; exposing the upper portion of the organic underlayer film pattern; removing the organic underlayer film pattern to form an inorganic silicon-containing film pattern with a pattern pitch that is ½ of that of the upper layer resist pattern; and processing the substrate to be processed while using the inorganic silicon-containing film pattern as a mask to form a pattern in the substrate to be processed.
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
G03F 7/16 - Procédés de couchage; Appareillages à cet effet
H01L 21/308 - Traitement chimique ou électrique, p.ex. gravure électrolytique en utilisant des masques
Provided is a thermally conductive silicone composition capable of being turned into a cured product that is superior in heat dissipation property and is able to suppress corrosion of metal wirings. The thermally conductive silicone composition contains:
(A) an organopolysiloxane having at least 2 silicon atom-bonded alkenyl groups per molecule, and having a kinetic viscosity of 10 to 100,000 mm2/s at 25° C.;
(B) an organohydrogenpolysiloxane having, per molecule, at least 2 hydrogen atoms that are directly bonded to silicon atoms;
(C) a thermally conductive filler having a thermal conductivity of not lower than 10 W/m·K;
(D) a dimethylpolysiloxane with one molecular chain end being blocked by a trialkoxy group;
(E) a platinum group metal-based curing catalyst;
(F) benzotriazole and/or a benzotriazole derivative; and
(G) an aliphatic unsaturated bond-free organopolysiloxane.
In a method of manufacturing porous glass base for optical fiber, a liquid organic siloxane raw material stored in a raw material tank of internal pressure P1 is controlled by a mass flow controller at a predetermined flow rate and pumped through pipe of internal pressure P2 to a vaporizer, the liquid raw material is vaporized in the vaporizer and supplied as a gas raw material to a burner, and the silica fine particles formed by burning the gas raw material in the burner are deposited to form a porous glass base material, where P1≤P2 is satisfied.
C03B 37/018 - Fabrication d'ébauches d'étirage de fibres ou de filaments obtenues totalement ou partiellement par des moyens chimiques par dépôt de verre sur un substrat de verre, p.ex. par dépôt chimique en phase vapeur
47.
NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR
A nitride semiconductor substrate, including a Ga-containing nitride semiconductor thin film formed on a substrate for film-forming in which a single crystal silicon layer is formed on a composite substrate in which a plurality of layers is bonded, wherein the nitride semiconductor substrate has a region where the Ga-containing nitride semiconductor thin film is not formed inward from an edge of the single crystal silicon layer being a growth surface of the nitride semiconductor thin film. This provides: a nitride semiconductor substrate with inhibited generation of a reaction mark; and a manufacturing method therefor.
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/205 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV comprenant plusieurs composés dans différentes régions semi-conductrices
48.
Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process
The present invention is a compound for forming a metal-containing film, represented by the following general formula (M), where T's each represent a unit represented by the following general formula (1); Q represents a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aliphatic unsaturated organic group having 2 to 20 carbon atoms and having one or more double bonds or triple bonds, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted arylalkyl group having 7 to 31 carbon atoms, or a combination of these groups; and RA represents an organic group whose protecting group is to be removed by an action of an acid, heat, or both to generate one or more hydroxy groups or carboxyl groups. This provides a compound for forming a metal-containing film that can provide a composition for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties.
The present invention is a compound for forming a metal-containing film, represented by the following general formula (M), where T's each represent a unit represented by the following general formula (1); Q represents a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aliphatic unsaturated organic group having 2 to 20 carbon atoms and having one or more double bonds or triple bonds, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted arylalkyl group having 7 to 31 carbon atoms, or a combination of these groups; and RA represents an organic group whose protecting group is to be removed by an action of an acid, heat, or both to generate one or more hydroxy groups or carboxyl groups. This provides a compound for forming a metal-containing film that can provide a composition for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties.
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
C23C 16/30 - Dépôt de composés, de mélanges ou de solutions solides, p.ex. borures, carbures, nitrures
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
G03F 7/16 - Procédés de couchage; Appareillages à cet effet
H01L 21/308 - Traitement chimique ou électrique, p.ex. gravure électrolytique en utilisant des masques
LIQUID COMPOSITION FOR SILICONE RUBBER SPHERICAL PARTICLE, SILICONE RUBBER SPHERICAL PARTICLE AND METHOD FOR MANUFACTURING THE SAME, AND SILICONE COMPOSITE PARTICLE AND METHOD FOR MANUFACTURING THE SAME
A liquid composition for a silicone rubber spherical particle including (A) a polysiloxane represented by the general formula (1) and having at least two alkenyl groups per molecule, (B) an organohydrogenpolysiloxane represented by the general formula (2) and having at least two hydrogen atoms bonded to a silicon atom per molecule, and (C) a hydrosilylation-reaction catalyst.
A liquid composition for a silicone rubber spherical particle including (A) a polysiloxane represented by the general formula (1) and having at least two alkenyl groups per molecule, (B) an organohydrogenpolysiloxane represented by the general formula (2) and having at least two hydrogen atoms bonded to a silicon atom per molecule, and (C) a hydrosilylation-reaction catalyst.
A liquid composition for a silicone rubber spherical particle including (A) a polysiloxane represented by the general formula (1) and having at least two alkenyl groups per molecule, (B) an organohydrogenpolysiloxane represented by the general formula (2) and having at least two hydrogen atoms bonded to a silicon atom per molecule, and (C) a hydrosilylation-reaction catalyst.
(R1 is an alkenyl group. R2 is a divalent hydrocarbon group. R3 is an alkyl group or an alkenyl group. X is an ester group. “n” satisfies 1≤n≤1000.)
A liquid composition for a silicone rubber spherical particle including (A) a polysiloxane represented by the general formula (1) and having at least two alkenyl groups per molecule, (B) an organohydrogenpolysiloxane represented by the general formula (2) and having at least two hydrogen atoms bonded to a silicon atom per molecule, and (C) a hydrosilylation-reaction catalyst.
(R1 is an alkenyl group. R2 is a divalent hydrocarbon group. R3 is an alkyl group or an alkenyl group. X is an ester group. “n” satisfies 1≤n≤1000.)
A liquid composition for a silicone rubber spherical particle including (A) a polysiloxane represented by the general formula (1) and having at least two alkenyl groups per molecule, (B) an organohydrogenpolysiloxane represented by the general formula (2) and having at least two hydrogen atoms bonded to a silicon atom per molecule, and (C) a hydrosilylation-reaction catalyst.
(R1 is an alkenyl group. R2 is a divalent hydrocarbon group. R3 is an alkyl group or an alkenyl group. X is an ester group. “n” satisfies 1≤n≤1000.)
(R4 represents a hydrogen atom, a monovalent hydrocarbon group, or an alkoxy group. R5 represents a monovalent hydrocarbon group. “p”, “q”, and “r” satisfy 0≤p≤200, 1≤q≤200, and 0≤r≤200, respectively.)
A bio-electrode includes a porous, stretchy base material, an adhesive, conductive film containing silicon, and a conducting path. The conductive film is formed on one surface of the porous, stretchy base material. The conducting path is connected to the conductive film, and penetrates the stretchy base material to be exposed on the opposite side. This enables provision of the bio-electrode that has high sensitivity to a bio-signal and excellent bio-compatibility, that is lightweight, that can be produced at low cost, that is free of itching, red spots, and rash of the skin and comfortable even when being wet, dried, or attached to the skin for a long period of time, without a significant decrease in sensitivity to the bio-signal, a production method for the bio-electrode, and a measurement method for a bio-signal.
A61B 5/265 - Détection, mesure ou enregistrement de signaux bioélectriques ou biomagnétiques du corps ou de parties de celui-ci Électrodes bioélectriques à cet effet caractérisées par les matériaux des électrodes contenant de l’argent ou du chlorure d’argent
A61B 5/268 - Détection, mesure ou enregistrement de signaux bioélectriques ou biomagnétiques du corps ou de parties de celui-ci Électrodes bioélectriques à cet effet caractérisées par les matériaux des électrodes contenant des polymères conducteurs, p.ex. des polymères PEDOT:PSS
A61B 5/28 - Détection, mesure ou enregistrement de signaux bioélectriques ou biomagnétiques du corps ou de parties de celui-ci Électrodes bioélectriques à cet effet spécialement adaptées à des utilisations particulières pour l’électrocardiographie [ECG]
51.
ARTICLE HAVING WATER- AND OIL-REPELLENT SURFACE LAYER
The present invention provides an article having a water- and oil-repellent surface layer, as well as excellent water- and oil-repellent properties, abrasion resistance (resistance to abrasion by eraser), and slipperiness, said article being constituted from: a glass substrate; an underlayer formed upon the outer surface of the glass substrate and having a silicon oxide as the main component thereof; and a water- and oil-repellent surface layer formed upon the outer surface of the silicon oxide underlayer. The film density of the silicon oxide underlayer is 1.8-2.2 g/cm3. The water- and oil-repellent surface layer has, as the main component thereof: a fluoropolyether group-containing polymer having a hydrolyzable silyl group with a specific structure; and/or a cured product of a partially hydrolyzed condensate thereof.
C03C 17/42 - Traitement de surface du verre, p.ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement avec au moins deux revêtements ayant des compositions différentes un revêtement au moins étant une substance organique et un revêtement au moins étant un non-métal
C03C 23/00 - Autres traitements de surface du verre, autre que sous forme de fibres ou de filaments
C08G 65/336 - Polymères modifiés par post-traitement chimique avec des composés organiques contenant du silicium
C09D 171/00 - Compositions de revêtement à base de polyéthers obtenus par des réactions créant une liaison éther dans la chaîne principale; Compositions de revêtement à base de dérivés de tels polymères
52.
Bio-Electrode And Method For Manufacturing Bio-Electrode
The present invention is a bio-electrode includes an electro-conductive polymer composite layer, an electro-conductive layer (C), and a substrate (D). The electro-conductive polymer composite layer consists of an electro-conductive polymer composite which includes (A) a π-conjugated polymer and (B) a dopant polymer. The substrate (D) has a transmittance of 20% or more at a wavelength of 600 nm and is yellow-red (YR) with a value in the range of 1 to 9 and a chroma in the range of 1 to 12 in the Munsell color system. This provides: a bioelectrode which is thin film, highly transparent, slightly different from the skin in color, highly sensitive to biological signals, excellent in biocompatibility, light-weight, manufacturable at low cost, capable of preventing significant reduction in the sensitivity to biological signals when wetted with water or dried and when attached on the skin for a long time; and a method for manufacturing the bio-electrode.
A61B 5/268 - Détection, mesure ou enregistrement de signaux bioélectriques ou biomagnétiques du corps ou de parties de celui-ci Électrodes bioélectriques à cet effet caractérisées par les matériaux des électrodes contenant des polymères conducteurs, p.ex. des polymères PEDOT:PSS
Provided is a photosensitive resin composition comprising: (A) a silicone resin having an epoxy group and/or a phenolic hydroxyl group; (B) a photoacid generator represented by formula (B); and (C) a benzotriazole compound.
Provided is a photosensitive resin composition comprising: (A) a silicone resin having an epoxy group and/or a phenolic hydroxyl group; (B) a photoacid generator represented by formula (B); and (C) a benzotriazole compound.
Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same.
Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same.
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same.
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same.
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
[in the formula, each R is independently a hydrogen atom, a C1-C20 alkyl group, a C1-C22 carboxylic acid ester residue, a group represented by formula (2),
Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same.
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
[in the formula, each R is independently a hydrogen atom, a C1-C20 alkyl group, a C1-C22 carboxylic acid ester residue, a group represented by formula (2),
Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same.
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
[in the formula, each R is independently a hydrogen atom, a C1-C20 alkyl group, a C1-C22 carboxylic acid ester residue, a group represented by formula (2),
or a group represented by formula (3),
Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same.
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
[in the formula, each R is independently a hydrogen atom, a C1-C20 alkyl group, a C1-C22 carboxylic acid ester residue, a group represented by formula (2),
or a group represented by formula (3),
Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same.
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
[in the formula, each R is independently a hydrogen atom, a C1-C20 alkyl group, a C1-C22 carboxylic acid ester residue, a group represented by formula (2),
or a group represented by formula (3),
X is —CH2CH2O— or —CH2CH(CH3)O—, and m is 0 or 1], and
has an adjusted amount of a substituent.
A polyurethane contains a phenolic hydroxyl group represented by the following general formula (1A). Thus, the present invention provides: a conductive paste composition for forming a stretchable conductive wire which varies slightly in electric conductivity at the time of elongation and shrinkage; and a polyurethane providing the composition.
A polyurethane contains a phenolic hydroxyl group represented by the following general formula (1A). Thus, the present invention provides: a conductive paste composition for forming a stretchable conductive wire which varies slightly in electric conductivity at the time of elongation and shrinkage; and a polyurethane providing the composition.
[Summary] [Problem] The purpose of the present invention is to provide an easy method for reducing the amount of hydrochlorides of organic bases dissolved in a radical polymerizable group-containing organopolysiloxane. [Solution] A method for producing a radical polymerizable group-containing organopolysiloxane that includes a reaction step in which an organopolysiloxane (A) having one or more monovalent organic groups which have at an end a group selected from a hydroxy group, a thiol group, and an amino group having an active hydrogen per molecule and a radical polymerizable group-containing carboxylic chloride (B) are reacted in the presence of an organic base (C) to obtain a radical polymerizable group-containing organopolysiloxane, wherein the production method is characterized by including a filtration step in which hydrochlorides of the organic base (C) generated in the reaction step are removed by filtration to obtain a crude product and a purification step in which silica gel is added in a quantity of 0.5-20 mass parts per 100 mass parts of nonvolatile components contained in the crude product, stirred, and pressure filtration then performed. [Selected drawing] None
An anisotropic electro-conductive film having high reliability, which electrically connects circuit electrodes having a fine pattern. The anisotropic film contains an insulating resin and particle groups. The particle groups are groups of particles in which a plurality of particles are bound together with a binder. The particle groups are regularly arranged with an interval of 1 μm to 1,000 μm.
B29C 43/02 - Moulage par pressage, c. à d. en appliquant une pression externe pour faire couler la matière à mouler; Appareils à cet effet pour la fabrication d'objets de longueur définie, c. à d. d'objets séparés
B29C 43/00 - Moulage par pressage, c. à d. en appliquant une pression externe pour faire couler la matière à mouler; Appareils à cet effet
B29K 79/00 - Utilisation comme matière de moulage d'autres polymères contenant dans la chaîne principale uniquement de l'azote avec ou sans oxygène ou carbone
B29K 509/00 - Utilisation de matériaux inorganiques non prévus dans les groupes comme matière de remplissage
B29L 31/34 - Appareils électriques, p.ex. bougies ou leurs parties constitutives
H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages
Provided is a polymer having a silphenylene skeleton, a polysiloxane skeleton and a fluorene skeleton in the main chain, and containing an acryloyl group or a methacryloyl group in the side chain.
C08G 77/52 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène par des liaisons au carbone contenant des cycles aromatiques
59.
FLUORENE SKELETON-CONTAINING (METH)ACRYLATE COMPOUND, RESIN COMPOSITION, AND CURED PRODUCT
C07C 271/48 - Esters des acides carbamiques ayant des atomes d'oxygène de groupes carbamate liés à des atomes de carbone de cycles aromatiques à six chaînons avec les atomes d'azote des groupes carbamate liés à des atomes d'hydrogène ou à des atomes de carbone acycliques à des atomes de carbone de radicaux hydrocarbonés substitués par des atomes d'oxygène liés par des liaisons simples
The present invention is an addition reaction-curable silicone emulsion composition comprising at least one kind of ureide compound (I) selected from organic compounds that are not polymers and have at least one ureide group in the molecule, an organopolysiloxane (II) that has at least two alkenyl groups in a single molecule, and water (VI), the addition reaction-curable silicone emulsion composition being characterized in comprising at least 1.0 parts by mass of the ureide compound (I) and at least 100.0 parts by mass of water (VI) with respect to parts by mass of the organopolysiloxane (II). Provided as a result are: a silicone emulsion composition that provides cured films that have adequate peel strength and high residual adhesion rate to pressure-sensitive adhesives, while having good coatability and adhesiveness with respect to paper or plastic film substrates regardless of the variety thereof; and a release film obtained by shaping a cured film of said silicone emulsion composition.
The present invention is an organopolysiloxane emulsion composition comprising: 100 parts by mass of (A) an organopolysiloxane that is a condensation reaction product of an organopolysiloxane HO(R12nnH represented by general formula (1) and having silanol groups at both terminals of a molecular chain; 10-50 parts by mass of (B) a nonionic surfactant having an HLB of 12-18; 10-60 parts by mass of (C) an anionic surfactant; and 20-1,000 parts by mass of (D) water. Consequently, provided are an emulsion composition and a production method therefor, the emulsion composition containing an organopolysiloxane having a viscosity of at least 30,000 mPa∙s at 25ºC, wherein the contents of octamethylcyclotetrasiloxane, decamethylcyclopentasiloxane, and dodecamethylcyclohexasiloxane are small, the emulsion has a fine average particle diameter of at most 100 nm, and the emulsion composition has transparency.
This invention relates to an onium salt, a chemically amplified positive resist composition, and a resist pattern forming process. The invention provides an onium salt capable of generating an acid having an adequate acid strength and low diffusion, a chemically amplified positive resist composition comprising the onium salt, and a resist pattern forming process using the composition. The chemically amplified positive resist composition comprises an onium salt capable of generating an acid having an adequate acid strength and suppressed diffusion is provided.
C07C 309/43 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné contenant des atomes d'oxygène, liés par des liaisons simples, liés au squelette carboné ayant au moins un des groupes sulfo lié à un atome de carbone d'un cycle aromatique à six chaînons faisant partie d'un système cyclique condensé
C07C 309/73 - Esters d'acides sulfoniques ayant des atomes de soufre de groupes sulfo estérifiés liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné à des atomes de carbone de cycles aromatiques à six chaînons non condensés
The present invention is a bio-electrode having layers on a substrate, wherein the layers include: (A) an electro-conductive layer including an electro-conductive wiring having a width of 200 μm or less; and (B) an ionic polymer containing layer including a polymer including a repeating unit-a having at least one selected from fluorosulfonic acid, fluorosulfonimide, and N-carbonyl-fluorosulfonamide, and having the weight-average molecular weight in a range of 1,000 to 500,000. This provides: a bio-electrode that allows thin, highly transparent, highly sensitive to a biological signal, excellent in biocompatibility, light-weight, manufacturable at low cost, capable of preventing significant reduction in the sensitivity to biological signals even when attached on the skin for a long time and when wetted with water or dried, and comfortable without itching, reddening, nor rash of skin; and a method for manufacturing a bio-electrode.
A61B 5/268 - Détection, mesure ou enregistrement de signaux bioélectriques ou biomagnétiques du corps ou de parties de celui-ci Électrodes bioélectriques à cet effet caractérisées par les matériaux des électrodes contenant des polymères conducteurs, p.ex. des polymères PEDOT:PSS
C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
C09D 125/18 - Homopolymères ou copolymères de monomères aromatiques contenant des éléments autres que le carbone et l'hydrogène
C09D 133/06 - Homopolymères ou copolymères d'esters d'esters ne contenant que du carbone, de l'hydrogène et de l'oxygène, l'atome d'oxygène faisant uniquement partie du radical carboxyle
C09D 133/16 - Homopolymères ou copolymères d'esters contenant des atomes d'halogène
C09D 133/24 - Homopolymères ou copolymères d'amides ou d'imides
64.
DIAMOND SUBSTRATE AND METHOD FOR MANUFACTURING SAME
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
Inventeur(s)
Noguchi, Hitoshi
Makino, Toshiharu
Ogura, Masahiko
Kato, Hiromitsu
Abrégé
A method for manufacturing a diamond substrate, the method being a method for producing a (111) oriented diamond crystal on an underlying substrate by epitaxial growth using hydrogen-diluted methane as a main source gas by a microwave plasma CVD method, a direct current plasma CVD method, a hot-filament CVD method, or an arc discharge plasma jet CVD method, in which a growth rate is less than 3.8 μm/h. Thereby, a diamond crystal applicable to an electronic and magnetic device and a method to produce this crystal are stably provided in which the crystal with the NV axis with orientation and high-density NVC obtained by the CVD method under a predetermined condition is grown on a highly oriented (111) diamond base substrate obtained by the CVD method also under a predetermined condition.
This aqueous composition contains: a silanol compound having an imidazolidinone group represented by general formula (1); and a condensate of the silanol compound. The content of an alcohol is less than 5 mass % relative to the content of the silanol compound and the condensate of the silanol compound. The aqueous composition suppresses the generation of alcohols, suppresses excessive condensation of the silanol compound, prevents an increase in molecular weight over time, and yields a colorless transparent aqueous solution.
This aqueous composition contains: a silanol compound having an imidazolidinone group represented by general formula (1); and a condensate of the silanol compound. The content of an alcohol is less than 5 mass % relative to the content of the silanol compound and the condensate of the silanol compound. The aqueous composition suppresses the generation of alcohols, suppresses excessive condensation of the silanol compound, prevents an increase in molecular weight over time, and yields a colorless transparent aqueous solution.
This aqueous composition contains: a silanol compound having an imidazolidinone group represented by general formula (1); and a condensate of the silanol compound. The content of an alcohol is less than 5 mass % relative to the content of the silanol compound and the condensate of the silanol compound. The aqueous composition suppresses the generation of alcohols, suppresses excessive condensation of the silanol compound, prevents an increase in molecular weight over time, and yields a colorless transparent aqueous solution.
(In the formula, R1 denotes a halogen atom or a methyl group, R2 denotes an unsubstituted divalent hydrocarbon group having 1-8 carbon atoms, and n denotes an integer between 0 and 2.)
A debris determination method of determining, using an image obtained by an appearance inspection device, debris that occurs around a hard laser mark (HLM) on a backside of a wafer, including: a step of calculating reference luminance from a grayscale image obtained by the appearance inspection device; a step of extracting a printed region including the HLM from the grayscale image; a step of excluding a dot portion of the HLM from the printed region; a step of extracting, with reference to the reference luminance, a debris region from the printed region from which the dot portion of the HLM has been excluded; and a step of determining the presence or absence of debris in the printed region based on the debris region. This provides a debris determination method that can reliably detect debris that cannot be detected by shape measuring devices and determine the presence or absence of debris.
The present invention provides: an organopolysiloxane which has excellent emulsion stability; and a cosmetic preparation which uses this organopolysiloxane. Disclosed is a carboxy group-modified organopolysiloxane which has a (poly)glycerol group or a polyoxyalkylene group and is represented by formula (1). (In the formula, R1represents a monovalent hydrocarbon group, R2represents a (poly)glycerol group or a polyoxyalkylene group, R3 represents a carboxy group, 0 ≤ a ≤ 100, 1 ≤ b ≤ 10, 1 ≤ c ≤ 10, 0 ≤ d ≤ 10, e ≥ 0, and f ≥ 0.)
A61K 8/81 - Cosmétiques ou préparations similaires pour la toilette caractérisés par la composition contenant des composés organiques macromoléculaires obtenus par des réactions faisant intervenir uniquement des liaisons insaturées carbone-carbone
A61K 8/894 - Polysiloxanes saturés, p.ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone modifiés par un groupe polyoxyalkylène, p.ex. cétyl diméthicone copolyol
A61Q 1/00 - Préparations pour le maquillage; Poudres corporelles; Préparations pour le démaquillage
A61Q 1/02 - Préparations contenant des colorants cutanés, p.ex. pigments
A61Q 19/00 - Préparations pour les soins de la peau
C08G 77/46 - Polymères séquencés ou greffés contenant des segments de polysiloxanes contenant des segments de polyéthers
C08G 77/48 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène
C08K 5/5415 - Composés contenant du silicium contenant de l'oxygène contenant au moins une liaison Si—O
Provided is an optical fiber comprising an inner core with a radius r1 at a center part, an outer core with a radius r2, a first cladding layer with an outermost radius r3 which is adjacent to the outer core at a radial position r2 and covers the outer periphery of the outer core, a second cladding layer with an outermost radius r4 which is adjacent to the first cladding layer at a radial position r3 and covers the outer periphery of the first cladding layer, and a third cladding layer which is adjacent to the second cladding layer at a radial position r4 and covers the outer periphery of the second cladding layer. The refractive index of the inner core, the outer core, and the first cladding layer takes on a maximum value at the center part and decreases continuously and smoothly from the center part to the outer side. The refractive index of the second cladding layer increases continuously and smoothly from the radial position r3 to the radial position r4.
Provided is an aqueous composition that is acid-resistant, does not cause blockage of spray nozzle even without a cooling equipment, and can be suitably used in an enteric coating preparation in a simple and convenient manner. The aqueous composition includes hydroxypropyl methyl cellulose acetate succinate having an acetyl group substitution degree from 0.10 to 2.50 and a succinyl group substitution degree from 0.05 to 2.50 per number of anhydroglucose unit; a neutralizer; and water. The degree of neutralization of the hydroxypropyl methyl cellulose acetate succinate by the neutralizer is from 130 to 260 mol %.
Provided is a method for efficiently producing an oxadisilacyclopentane compound at a high yield, comprising reacting an azadisilacyclopentane compound with water,
the azadisilacyclopentane compound having the following general formula (1):
Provided is a method for efficiently producing an oxadisilacyclopentane compound at a high yield, comprising reacting an azadisilacyclopentane compound with water,
the azadisilacyclopentane compound having the following general formula (1):
[R1 to R4 are each independently an unsubstituted monovalent hydrocarbon group having 1 to 4 carbon atoms, and R5 is a hydrogen atom, a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, or a group having the following general formula (2):
Provided is a method for efficiently producing an oxadisilacyclopentane compound at a high yield, comprising reacting an azadisilacyclopentane compound with water,
the azadisilacyclopentane compound having the following general formula (1):
[R1 to R4 are each independently an unsubstituted monovalent hydrocarbon group having 1 to 4 carbon atoms, and R5 is a hydrogen atom, a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, or a group having the following general formula (2):
(R1 to R4 are as defined above, m is an integer of 0 to 5, n is an integer of 1 to 5, and a broken line donates a valence bond.)
the oxadisilacyclopentane compound having the following general formula (3):
Provided is a method for efficiently producing an oxadisilacyclopentane compound at a high yield, comprising reacting an azadisilacyclopentane compound with water,
the azadisilacyclopentane compound having the following general formula (1):
[R1 to R4 are each independently an unsubstituted monovalent hydrocarbon group having 1 to 4 carbon atoms, and R5 is a hydrogen atom, a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, or a group having the following general formula (2):
(R1 to R4 are as defined above, m is an integer of 0 to 5, n is an integer of 1 to 5, and a broken line donates a valence bond.)
the oxadisilacyclopentane compound having the following general formula (3):
(R1 to R4 are as defined above.).]
An addition-curable silicone rubber composition includes: (A) 100 parts by mass of alkenyl-group-containing organopolysiloxane having two or more alkenyl groups bonded to a silicon atom within one molecule; (B) 0.2 to 20 parts by mass of organohydrogenpolysiloxane containing two or more hydrogen atoms bonded to a silicon atom within one molecule; (C) catalytic amount of a platinum-based catalyst; (D) 0.01 to 5.0 parts by mass of thermally-dissociative blocked (poly)isocyanate; and (E) 0.01 to 10.0 parts by mass of a heat resistance-imparting agent. The addition-curable silicone rubber composition and silicone rubber cured material can produce a cured material having a low compressive set even under high temperature conditions of 200° C. or more.
A water repellent composition that contains
(A) a trialkylsiloxysilicate represented by average composition formula (1): 100 mass parts,
(B) an organopolysiloxane having at least two hydroxyl groups or alkoxy groups in the molecule represented by formula (2): 1-100 mass parts,
(C) one or more selected from tetraalkoxytitaniums represented by general formula (3)
A water repellent composition that contains
(A) a trialkylsiloxysilicate represented by average composition formula (1): 100 mass parts,
(B) an organopolysiloxane having at least two hydroxyl groups or alkoxy groups in the molecule represented by formula (2): 1-100 mass parts,
(C) one or more selected from tetraalkoxytitaniums represented by general formula (3)
A water repellent composition that contains
(A) a trialkylsiloxysilicate represented by average composition formula (1): 100 mass parts,
(B) an organopolysiloxane having at least two hydroxyl groups or alkoxy groups in the molecule represented by formula (2): 1-100 mass parts,
(C) one or more selected from tetraalkoxytitaniums represented by general formula (3)
(in the formula, M is titanium or zirconium, X are each independently a C1-8 alkyl group): 10-300 mass parts, and
(D) an organic solvent: 100-30,000 mass parts,
has an excellent water repellency-imparting effect, and can impart good softness to treated fibers.
D06M 13/503 - Traitement des fibres, fils, filés, tissus ou articles fibreux faits de ces matières, avec des composés organiques non macromoléculaires; Un tel traitement combiné avec un traitement mécanique avec des composés organiques contenant des atomes de bore, de silicium, de sélénium ou de tellure sans liaison entre un atome de carbone et un métal ou un atome de bore, de silicium, de sélénium ou de tellure
D06M 13/513 - Composés avec au moins une liaison carbone-métal ou carbone-bore, carbone-silicium, carbone-sélénium ou carbone-tellure avec au moins une liaison carbone-silicium
D06M 15/643 - Composés macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone contenant du silicium dans la chaîne principale
D06M 23/10 - Procédés dans lesquels l'agent traitant est dissout ou dispersé dans des solvants organiques; Procédés pour la récupération de ces solvants organiques
A debris determination method of determining, from an image obtained by an appearance inspection device, debris that occurs around an HLM on a backside of a wafer, including: replacing luminance data of the image with matrix data; extracting an HLM-printed region; obtaining a least-squares plane of luminance; obtaining normalized matrix data by subtracting the least-squares plane from the printed region; obtaining protrusion-side matrix data by substituting 0 for matrix values less than 0; obtaining recess-side matrix data by inverting the sign of the normalized matrix data and substituting 0 for matrix values representing dots and noise; obtaining composite matrix data from the protrusion- and recess-side matrix data; obtaining low-pass matrix data by processing the composite matrix data; and determining debris from the low-pass matrix data with a predetermined threshold and obtaining an area ratio of the debris to determine the presence or absence of debris in the printed region.
The present invention is a method for carrying a wafer, wherein in taking out the wafer from a closed container and carrying the wafer by a carrier robot or in taking in the wafer carried by the carrier robot into the closed container, when a latchkey is rotationally driven for fixing and unfixing a lid relative to a container body of the closed container mounted on a load port frame by a latchkey-driving mechanism provided on a load port door that can fit with a wafer carrying-in/out port of a carrying room and that holds the lid of the closed container to enable removal from the wafer carrying-in/out port, the latchkey is rotationally driven at a rotation rate of 60 deg/sec or less. This provides a method for carrying a wafer and wafer-carrying apparatus that can reduce an amount of dust generated when the lid of the closed container is opened and closed or when the load port door is raised and lowered for carrying the wafer.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p.ex. entre différents postes de travail
05 - Produits pharmaceutiques, vétérinaires et hygièniques
21 - Ustensiles, récipients, matériaux pour le ménage; verre; porcelaine; faience
Produits et services
Paints, Silicone products, namely, Varnishes, Silicone coating materials for use in the building and construction industries in the nature of concrete moisture barrier coating, Fluoropolymer paints; coatings agents with water-and-oil repellent properties in the nature of paints; Fluororesin-based antifouling paints; Coating materials for forming glassy film, namely, synthetic resin; paints for glass; coating compositions in the nature of paint for industrial applications; Varnishes; Water resistant paints Preparations for controlling or destroying insects; Insect attractants, namely, chemical compositions to attract insects for pest control purposes; insecticides containing pheromones to attract insects; pesticides and vermin destroying preparations; pesticides and vermin destroying preparations containing pheromones; Film coating agents for pharmaceutical products, enteric coating agents for pharmaceutical compositions, disintegrants for use as components in pharmaceutical products and controlled release agents for oral administration of medicines; pharmaceutical excipients for medicines, Pharmaceutical, veterinary and sanitary preparations including excipients; Pharmaceutical binders containing low-substituted hydroxypropyl cellulose in the form of tablets and granules; pharmaceutical disintegrants containing low-substituted hydroxypropyl cellulose; Cellulose ethers for pharmaceutical purposes; drug delivery agents in the form of powder that provides controlled release of the active ingredients for a wide variety of pharmaceuticals; Drug delivery agents in the form of a coating for tablets and capsules that facilitate the delivery of a wide range of pharmaceuticals; drug delivery agents in the form of capsules that provide controlled release of the active ingredients for a wide variety of pharmaceuticals; drug delivery agents in the form of tablets that provide controlled release of the active ingredients for a wide variety of pharmaceuticals Articles made from fused silica, fused quartz or glass, namely, ingots, tubes, rods, discs, plates and rings all for general industrial and further manufacturing use; fused silica and fused quartz glass tubes, both for manufacturing use; transparent fused silica and transparent quartz glass, both in the form of tubes and plates, for manufacturing lamps; glass for vehicle lamps; fused silica glass for use in the manufacturing process of semiconductors and liquid crystals; Quartz glass pipes being glass pipes, not for building and not for scientific purposes; fused silica, semi-worked, for use in manufacture, namely, fused silica as a semi-finished product, namely, ingots, tubes, rods, discs, plates and rings all for general industrial and further manufacturing use; fused silica being a semi-worked product, other than for building, namely, fused silica as a semi-finished product, namely, ingots, tubes, rods, discs, plates and rings all for general industrial and further manufacturing use; fused silica being a semi-worked product for manufacturing process of semiconductors and liquid crystals, namely, fused silica as a semi-finished product, namely, ingots, tubes, rods, discs, plates and rings all for general industrial and further manufacturing use; unworked or semi-worked glass, except building glass; crystallized glasses, namely, drinking glasses; glasses being insulating jars; fiberglass thread, other than for textile use; vitreous silica fibers, other than for textile use; glass fibers for reinforcing plastics; glass fibers for use in manufacturing various industrial products and consumer products being glass fibers for non-textile purposes; fiberglass, other than for insulation or textile use
This makeup cosmetic comprises:
(A) a crosslinking polyether modified silicone in which silicone chains are crosslinked with polyether chains: 0.1-4 mass %;
(B) a UV absorbing agent: 3.5-20 mass %;
(C) one or more types selected from cyclic or straight-chain dimethyl polysiloxanes having a kinetic viscosity of 4-100 mm2/s at 25° C.: 1.9 mass % or less;
(D) an aqueous component: 40-90 mass %; and
(E) a powder: 1-25 mass %.
This makeup cosmetic comprises:
(A) a crosslinking polyether modified silicone in which silicone chains are crosslinked with polyether chains: 0.1-4 mass %;
(B) a UV absorbing agent: 3.5-20 mass %;
(C) one or more types selected from cyclic or straight-chain dimethyl polysiloxanes having a kinetic viscosity of 4-100 mm2/s at 25° C.: 1.9 mass % or less;
(D) an aqueous component: 40-90 mass %; and
(E) a powder: 1-25 mass %.
The makeup cosmetic exhibits lightweight feel, good feeling in use, and excellent water-breaking sensation and coating properties.
A61K 8/40 - Cosmétiques ou préparations similaires pour la toilette caractérisés par la composition contenant des composés organiques contenant de l'azote
A spin wave excitation/detection structure to excite and detect a spin wave. This structure includes a support substrate, a conductive film provided on the support substrate, an insulating magnetic film provided on the conductive film, and a conductive line provided on the insulating magnetic film. This provides the spin wave excitation/detection structure having a structure with high strength, the spin wave that can be excited with high intensity, and the spin wave that can be excited with broad frequency bandwidth.
A resist composition is provided that comprises a hypervalent iodine compound having the formula (1), a carboxy group-containing polymer, and a solvent. In formula (1), n is an integer of 0 to 5, R1 and R2 are each independently halogen or a C1-C10 hydrocarbyl group which may contain a heteroatom, R1 and R2 may bond together to form a ring with the carbon atoms to which they are attached and the intervenient atoms. R3 is halogen or a C1-C40 hydrocarbyl group which may contain a heteroatom.
A resist composition is provided that comprises a hypervalent iodine compound having the formula (1), a carboxy group-containing polymer, and a solvent. In formula (1), n is an integer of 0 to 5, R1 and R2 are each independently halogen or a C1-C10 hydrocarbyl group which may contain a heteroatom, R1 and R2 may bond together to form a ring with the carbon atoms to which they are attached and the intervenient atoms. R3 is halogen or a C1-C40 hydrocarbyl group which may contain a heteroatom.
A negative electrode active material including silicon monoxide particles coated with a carbon coating and doped with lithium, wherein the silicon monoxide particles satisfy that, in volumetric basis distribution measured with a laser-diffraction method particle size distribution measurement device, an integrated value of a relative amount of particles having a particle size of 1 μm or less is 1% or less, an integrated value of a relative amount of particles having a particle size of 5 μm or less is 20% or less, and an accumulative 50%-particle-size D50 satisfies 6.0 μm≤D50≤15.0 μm. This provides a negative electrode active material that can improve cycle characteristics while keeping high first efficiency when used as the negative electrode active material for a negative electrode of a secondary battery.
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/02 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif
H01M 4/48 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques
H01M 4/583 - Matériau carboné, p.ex. composés au graphite d'intercalation ou CFx
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
80.
METHOD FOR FORMING THERMAL OXIDE FILM ON SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
The present invention provides a method for forming a thermal oxide film, comprising the steps of: a step of acquiring a first correlation between an amount of OH groups and thickness of the thermal oxide film by forming a thermal oxide film by thermal oxidation treatment under the same condition after preparing a plurality of semiconductor substrates having chemical oxide films formed by cleaning and having different amounts of OH groups; a step of acquiring a second correlation between an amount of OH groups and drying conditions by cleaning under the same cleaning condition followed by changed drying conditions to substrates and measuring amounts of OH groups; a step of acquiring a third correlation between drying condition and thickness of thermal oxide film by using the first correlation and the second correlation; a step of determining drying condition and thermal oxidation condition by using the third correlation; a step of cleaning the substrates; and a step of drying and a thermal oxide film formation after the cleaning step using the drying conditions and thermal oxidation treatment conditions determined in the drying and thermal oxidation treatment condition determination step. This provides a method for forming thermal oxide film in which a thermal oxide film can be formed with intended thickness with good reproducibility while without changing the composition of the cleaning chemical solution.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
81.
NICKEL SUBSTRATE AND METHOD FOR MANUFACTURING DIAMOND SUBSTRATE USING SAME
NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY (Japon)
SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
Tokuda Norio
Yamasaki Satoshi
Matsumoto Tsubasa
Mikoshiba Naoki
Asai Taiga
Abrégé
[Problem] The purpose of the present invention is to provide a nickel substrate for obtaining a large diameter diamond substrate, and to provide a method for manufacturing a diamond substrate using the nickel substrate. [Solution] This nickel substrate is to be used for the heteroepitaxial growth of a diamond layer, and is characterized in that the nickel substrate is formed of single crystals, and has a (111) crystal surface on the surface thereof.
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
82.
RESIN COMPOSITION, RESIN COATING, DRY FILM, AND RESIN CURED PRODUCT
This resin composition comprises (A) a polymer wherein the main chain contains a silphenylene backbone, an epoxy group-containing isocyanuric acid backbone, and a norbornane backbone and (B) an epoxy curing accelerator, and is heat cured to yield a resin cured product having a relative dielectric constant of 2.5 or less at 10 GHz and a dielectric loss tangent of 0.005 or less at 10 GHz.
C08G 59/32 - Composés époxydés contenant au moins trois groupes époxyde
C08G 77/60 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone dans lesquels tous les atomes de silicium sont liés autrement que par des atomes d'oxygène
H05K 3/28 - Application de revêtements de protection non métalliques
Provided is a photosensitive resin composition comprising (A) a silicone resin having an acid-crosslinkable group, (B) an epoxy compound represented by formula (B1), and (C) a photoacid generator. (In formula (B1), R1 is a hydrogen atom, a C1-4 saturated hydrocarbyl group, a phenyl group, a hydroxyphenyl group, or a halogen-substituted phenyl group.)
C08G 77/52 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone dans lesquels au moins deux atomes de silicium, mais pas la totalité, sont liés autrement que par des atomes d'oxygène par des liaisons au carbone contenant des cycles aromatiques
This fluorine-containing coating agent, which is used on an article for plumbing applications, is capable of forming a hardened film having excellent antifouling properties and wear durability, and includes a composition in which a fluoropolyether group-containing polymer having a hydrolyzable silyl group or hydroxysilyl group, and/or a partial (hydrolyzed) condensate thereof, is uniformly dissolved in an organic solvent having no fluorine atom in a molecule. The molar mass of the fluoropolyether group in the polymer is 2,500 Da or more, and the fluorine content of the polymer (excluding a trifluoromethyl group present in a branched chain of a fluoropolyether group) is 50 mass% or less.
C09D 171/00 - Compositions de revêtement à base de polyéthers obtenus par des réactions créant une liaison éther dans la chaîne principale; Compositions de revêtement à base de dérivés de tels polymères
B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers
Provided is a thermally conductive composition having excellent thermal conductivity and excellent workability. This thermally conductive composition has: 100 parts by mass of (A) gallium and/or an alloy thereof having a melting point in the range of -20°C to 100°C; and, with respect to 100 parts by mass of the (A) component, 2-150 parts by mass of (B) a metal oxide and/or a metal nitride having an average particle diameter of 0.01-200 µm. The total content rate of the (A) component and the (B) component in the composition is 95-100 mass%. In the thermally conductive composition, a gallium alloy of the (A) component is at least one selected from Ga-In alloys, Ga-Sn-Zn alloys, Ga-In-Sn alloys, and Ga-In-Bi-Sn alloys.
The present invention is a bio-electrode including: a substrate having anti-reflective structure for light on at least one side; and (A) an electro-conductive layer having electro-conductive wiring on the opposite side from the side having the anti-reflective structure of the substrate. This provides: a bio-electrode that allows thin, highly transparent, highly sensitive to biological signals, excellent in biocompatibility, light-weight, manufacturable at low cost, capable of preventing significant reduction in sensitivity to biological signals even when attached on the skin for a long time and when wetted with water or dried, and comfortable without itching, reddening, nor rash of the skin.
A negative electrode material containing a negative electrode active material particle which includes a silicon compound particle containing a silicon compound (SiOx: 0.5≤x≤1.6). The silicon compound particle contains at least one or more of Li2SiO3 and Li4SiO4, and the negative electrode material further contains at least one of a metal compound particle containing a metal compound and an aggregate of the metal compound particle. The negative electrode material is capable of stabilizing a slurry prepared in production of a negative electrode for a secondary battery, and improving initial charge-discharge characteristics and cycle characteristics when it is used as a negative electrode active material for a secondary battery.
H01M 4/134 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de métaux, de Si ou d'alliages
H01M 4/02 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif
H01M 4/131 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p.ex. LiCoOx
H01M 4/133 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de matériau carboné, p.ex. composés d'intercalation du graphite ou CFx
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
88.
WAFER MARKING METHOD, METHOD OF PRODUCING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR SUBSTRATE
A wafer marking method uses a laser for performing a laser marking on a defect region of a nitride semiconductor substrate in which a nitride semiconductor layer contains at least a GaN layer formed by epitaxial growth on a single-crystal silicon substrate. The method includes that a surface of the GaN layer and a surface of the single-crystal silicon substrate are performed laser marking simultaneously by irradiating the defect region with a laser of a wavelength within ±10% of 365 nm, having a wavelength corresponding to a band gap energy of GaN.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p.ex. des rayons laser
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
The present invention is a thermally conductive silicone composition characterized by comprising: 100 parts by mass of an (A) component, an organopolysiloxane represented by general formula (1); 2-100 parts by mass of a (B) component, a diorganopolysiloxane having silicon-atom-bonded hydroxyl and/or hydrolyzable silyl groups at both ends of the molecular chain and having a kinematic viscosity at 25°C of 5-10,000 mm2/s; 10-250 parts by mass of a (C) component, an organopolysiloxane which is neither the (A) component nor the (B) component and which is represented by general formula (4) R5d(4-d)/2(4-d)/2 and has a kinematic viscosity at 25°C of 100-100,000 mm2/s; and a (D) component, a thermally conductive filler having a thermal conductivity of 10 W/m·°C or greater, the amount of the (D) component being 500-3,000 parts by mass relative to 100 parts by mass of the sum of the (A), (B), and (C) components. It is thus possible to provide a thermally conductive silicone composition that requires no special storage conditions and has excellent dislocation resistance.
An organosilicon compound represented by formula (1), which gives a coating composition having hydrophilic and antifogging properties that have excellent water resistance. (In formula (1), the R1moieties each independently represent a hydrogen atom, a C1-10 alkyl group, or a C6-10 aryl group, the R2 moieties each independently represent a C1-10 alkyl group or a C6-10 aryl group, X represents a C2-20 divalent saturated hydrocarbon group which may be separated by a sulfur atom, and n is an integer of 1-3.)
C09K 3/18 - Substances non couvertes ailleurs à appliquer sur des surfaces pour y minimiser l'adhérence de la glace, du brouillard ou de l'eau; Substances antigel ou provoquant le dégel pour application sur des surfaces
91.
DEVICE FOR PRODUCING POROUS OPTICAL FIBER BASE MATERIAL
This device for producing a porous optical fiber base material causes glass microparticles produced by flame hydrolysis of a starting gas to be deposited onto a starting material that is being taken up while being turned. The device is provided with a reaction chamber and a holding part for holding the burner used when depositing the glass microparticles. The holding position and/or the holding direction of the burner held by the holding part are variable. The burner attachment position and/or the attachment direction can also be varied as a result of the holding part being detachable with respect to the reaction chamber of this device for producing a porous optical fiber base material.
C03B 37/018 - Fabrication d'ébauches d'étirage de fibres ou de filaments obtenues totalement ou partiellement par des moyens chimiques par dépôt de verre sur un substrat de verre, p.ex. par dépôt chimique en phase vapeur
This novel fluorine-including organohydrosilane compound is represented by formula (1), has two or more hydrosilyl groups, has a feature wherein the inter-Si links all comprise silalkylene structures, has good compatibility with base oils, and provides a fluoropolyether-based cured product having good characteristics.
This novel fluorine-including organohydrosilane compound is represented by formula (1), has two or more hydrosilyl groups, has a feature wherein the inter-Si links all comprise silalkylene structures, has good compatibility with base oils, and provides a fluoropolyether-based cured product having good characteristics.
This novel fluorine-including organohydrosilane compound is represented by formula (1), has two or more hydrosilyl groups, has a feature wherein the inter-Si links all comprise silalkylene structures, has good compatibility with base oils, and provides a fluoropolyether-based cured product having good characteristics.
(Rf is a monovalent perfluoropolyether group; A is a divalent organic group that may include at least one element selected from O, N, and Si; R is a C1-6 monovalent hydrocarbon group; n is an integer from 1 to 3; each B is a monovalent silicon-including organic group that has two or more diorganohydrosilyl groups when n is 1, independently has one or more diorganohydrosilyl groups when n is 2 or 3, and forms a silalkylene structure with the silicon atom linked thereto; and y is 1 or 2.)
The present invention relates to A process for preparing a conjugated diene compound, the process comprising: subjecting, to an intramolecular sigmatropic rearrangement reaction, a conjugated diene compound (1) of the following general formula (1), wherein Z represents a halogen atom, a methyl group, a hydroxy group, an acetoxy group, a formyl group, or an acetal, and n and m are, independently of each other, integers of 0 to 14, or a conjugated diene compound (2) of the following general formula (2), wherein Z, n, and m are as defined above, to obtain, respectively, a conjugated diene compound (3) of the following general formula (3), wherein Z is as defined above, and n and m are, independently of each other, integers of 0 to 14, with the proviso that m−1 is an integer of zero or more, or a conjugated diene compound (4) of the following general formula (4), wherein Z is as defined above, and n and m are, independently of each other, integers of 0 to 14, with the proviso that n−1 is an integer of zero or more.
The present invention relates to A process for preparing a conjugated diene compound, the process comprising: subjecting, to an intramolecular sigmatropic rearrangement reaction, a conjugated diene compound (1) of the following general formula (1), wherein Z represents a halogen atom, a methyl group, a hydroxy group, an acetoxy group, a formyl group, or an acetal, and n and m are, independently of each other, integers of 0 to 14, or a conjugated diene compound (2) of the following general formula (2), wherein Z, n, and m are as defined above, to obtain, respectively, a conjugated diene compound (3) of the following general formula (3), wherein Z is as defined above, and n and m are, independently of each other, integers of 0 to 14, with the proviso that m−1 is an integer of zero or more, or a conjugated diene compound (4) of the following general formula (4), wherein Z is as defined above, and n and m are, independently of each other, integers of 0 to 14, with the proviso that n−1 is an integer of zero or more.
C08F 36/04 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, l'un au moins contenant plusieurs liaisons doubles carbone-carbone le radical ne contenant que deux doubles liaisons carbone-carbone conjuguées
94.
ORGANOPOLYSILOXANE-MODIFIED CYCLODEXTRIN COMPOUND AND COSMETICS CONTAINING SAME
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
[in the formula, R is a hydrogen atom, a group represented by formula (2)
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
[in the formula, R is a hydrogen atom, a group represented by formula (2)
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
[in the formula, R is a hydrogen atom, a group represented by formula (2)
(in the formula, R is a group selected from among a C1-C8 alkyl group, a C1-C8 fluorine-substituted alkyl group, and a C6-C12 aryl group, n is an integer of 1-10, and a is an integer of 0-3), or a group represented by formula (3)
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
[in the formula, R is a hydrogen atom, a group represented by formula (2)
(in the formula, R is a group selected from among a C1-C8 alkyl group, a C1-C8 fluorine-substituted alkyl group, and a C6-C12 aryl group, n is an integer of 1-10, and a is an integer of 0-3), or a group represented by formula (3)
This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1)
[in the formula, R is a hydrogen atom, a group represented by formula (2)
(in the formula, R is a group selected from among a C1-C8 alkyl group, a C1-C8 fluorine-substituted alkyl group, and a C6-C12 aryl group, n is an integer of 1-10, and a is an integer of 0-3), or a group represented by formula (3)
(in the formula, X is a divalent organic group, and * is a bond that is bonded to a hydroxyl group of another sugar unit)],
wherein the ratio among the number NH of moles of the hydrogen atom, the number NS of moles of the group represented by formula (2), and the number NL of moles of the group represented by formula (3) satisfies NH:NS:NL=0.5-2.5:0.3-2.0:0.1-0.5, and NH+NS+NL is 3.0.
The present invention is an apparatus for manufacturing a single crystal by growing a single crystal according to a Czochralski method, the apparatus includes a main chamber configured to house a crucible configured to accommodate a raw-material melt and a heater configured to heat the raw-material melt, a pulling chamber being continuously provided at an upper portion of the main chamber and configured to accommodate a single crystal grown and pulled, and a cooling cylinder extends from at least a ceiling portion of the main chamber toward a surface of the raw material melt to surround the single crystal being pulled. The cooling cylinder is configured to be forcibly cooled with a coolant. The apparatus includes a first auxiliary cooling cylinder fitted inside of the cooling cylinder, and a second auxiliary cooling cylinder threadedly connected to the outside of the first auxiliary cooling cylinder from a side of a lower end. A gap between a bottom surface of the cooling cylinder and a top surface of the second auxiliary cooling cylinder is 0 mm or more to 1.0 mm or less. This provides an apparatus for manufacturing a single crystal which can increase growth rate of the single crystal by efficiently cooling the single crystal being grown.
A packaging member for packaging an object to be transported between clean rooms, the packaging member being used for packaging the object to be transported, being a FOUP or a FOSB, when transport thereof between the clean rooms each having a clean atmosphere of a semiconductor factory, in which the packaging member includes a dust-free cloth having dust-proof property and damp-proof property. The packaging member is capable of transporting an object to be transported between clean rooms at low cost while maintaining the high cleanness of the object to be transported, being the FOUP or the FOSB.
B65D 85/30 - Réceptacles, éléments d'emballage ou paquets spécialement adaptés à des objets ou à des matériaux particuliers pour objets particulièrement sensibles aux dommages par chocs ou compression
B65G 49/06 - Systèmes transporteurs caractérisés par leur utilisation à des fins particulières, non prévus ailleurs pour des matériaux ou objets fragiles ou dommageables pour des feuilles fragiles, p.ex. en verre
97.
HYDROXYL GROUP-CONTAINING ORGANOPOLYSILOXANE, METHOD FOR PRODUCING SAME, CURABLE COMPOSITION CONTAINING SAID ORGANOPOLYSILOXANE, COATING AGENT, AND COATED ARTICLE
Provided is a hydroxyl group-containing organopolysiloxane represented by formula (I). (In the formula, R1is a monovalent saturated hydrocarbon group or the like, R2is a methyl group or the like, R3is a group represented by formula (II), a, b, c, and d are numbers satisfying 0 ≤ a < 1, 0 < b ≤ 1, 0 ≤ c ≤ 0.5, 0 ≤ d < 1, and a + b + c + d = 1, e is a number satisfying 0 ≤ e ≤ 1, and f is a number satisfying 0 < f < 4.) (In the formula, R4is a monovalent saturated hydrocarbon group or the like, R5 is a hydrogen atom or a monovalent saturated hydrocarbon group, X is a divalent hydrocarbon group, n is a number from 0 to 400; and * indicates a bond with an oxygen atom.)
The present invention is a highly thermally conductive silicone composition which has a thermal conductivity of 7.0 W/m·K or more and a viscosity of 30-800 Pa·s and which is obtained by blending specific proportions of: (A) an organopolysiloxane; (B) a spherical magnesium oxide powder having an average sphericity of 0.8 or more, an average particle diameter of 80-150 µm and a purity of 98 mass% or more; (C) a thermally conductive filler which includes (C-I) a spherical aluminum oxide powder which has an average sphericity of 0.8 or more and an average particle diameter of 7-60 µm and in which the proportion of coarse particles having diameters of 96-150 µm is 0.1-30 mass% relative to component (C-I) as a whole, and (C-II) a spherical or amorphous aluminum oxide powder having an average particle diameter of 0.1-4 µm, with the (C-I) : (C-II) volume ratio being 2:8 to 8:2; and (D) a cationic exchange and/or amphoteric ion-exchange ion trapping agent on which at least one element selected from among Zr, Bi, Sb, Mg and Al is supported. Provided by this configuration is a highly thermally conductive silicone composition that exhibits excellent insulation properties, thermal conductivity, moisture resistance and storage stability.
Provided is a silicone macromer having improved compatibility with polymerizable hydrophilic monomers. The side-chain urethane-modified silicone macromer is represented by formula (1). (In formula (1), R represents a C1-10 alkyl group, etc., X represents a hydrogen atom or a methyl group, n1 independently represent numbers of 2-10, n2 represents a number of 0-8, R1222-O-R2 (2) (In formula (2), R2is a group shown by formula (4). In formula (3), R3independently are a hydrogen atom or a group shown by formula (4).) (In formula (4), R4 is a C1-10 alkyl group, etc.)
C08G 77/388 - Polysiloxanes modifiés par post-traitement chimique contenant des atomes autres que le carbone, l'hydrogène, l'oxygène ou le silicium contenant de l'azote
This water- and oil-repellent agent contains a polymer of a monomer represented by general formula (I) (in the formula, R represents a hydrogen atom, a halogen atom, an alkyl group, or an aryl group, X represents a single bond or a substituted or unsubstituted divalent hydrocarbon group optionally including one or more selected from an oxygen atom, an amino bond, an amide bond, a urethane bond, and a urea bond, and Rf represents a monovalent fluoropolyether group that has a molecular weight of 1,000-5,000 and that has the terminal thereof blocked with a perfluoro alkyl group having not more than 5 carbon atoms). The water- and oil-repellent agent exhibits excellent water- and oil-repellency not only at an initial stage but also under heat-resistant conditions even though the number of carbon atoms in the perfluoro alkyl group is less than 6 (not more than 5).
C09K 3/18 - Substances non couvertes ailleurs à appliquer sur des surfaces pour y minimiser l'adhérence de la glace, du brouillard ou de l'eau; Substances antigel ou provoquant le dégel pour application sur des surfaces
