Shin-Etsu Chemical Co., Ltd.

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Propriétaire / Filiale
[Owner] Shin-Etsu Chemical Co., Ltd. 3 427
Shin-Etsu Handotai Co., Ltd. 11
Nissin Chemical Industry Co., Ltd. 4
Japan VAM & Poval Co., Ltd. 4
SE Tylose GmbH & Co. KG 2
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Date
Nouveautés (dernières 4 semaines) 33
2024 septembre (MACJ) 27
2024 août 29
2024 juillet 28
2024 juin 29
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Classe IPC
G03F 7/004 - Matériaux photosensibles 515
G03F 7/20 - Exposition; Appareillages à cet effet 459
G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons 437
G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables 265
G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs 223
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Statut
En Instance 741
Enregistré / En vigueur 2 686
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1.

Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process

      
Numéro d'application 18581362
Statut En instance
Date de dépôt 2024-02-19
Date de la première publication 2024-09-26
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Kobayashi, Naoki
  • Nagamachi, Nobuhiro
  • Kori, Daisuke
  • Ishiwata, Kenta

Abrégé

The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound for forming a metal-containing film includes at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and one or more kinds of ligand derived from compounds represented by the following general formulae (1-A) to (1-D). This can provide: a metal compound having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used. The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound for forming a metal-containing film includes at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and one or more kinds of ligand derived from compounds represented by the following general formulae (1-A) to (1-D). This can provide: a metal compound having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.

Classes IPC  ?

  • H01L 21/308 - Traitement chimique ou électrique, p.ex. gravure électrolytique en utilisant des masques
  • C07F 5/00 - Composés contenant des éléments des groupes 3 ou 13 de la classification périodique
  • G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • H01L 21/311 - Gravure des couches isolantes

2.

THERMALLY CONDUCTIVE SHEET PRODUCT AND METHOD FOR PRODUCING SAME

      
Numéro d'application 18579081
Statut En instance
Date de dépôt 2022-07-04
Date de la première publication 2024-09-26
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Koshikawa, Hidenori
  • Endo, Akihiro

Abrégé

The present invention provides: a thermally conductive sheet product wherein both surfaces of a fluorine rubber-based thermally conductive sheet are protected from foreign substances and the like, and excellent setting workability is achieved between a heat generation member and a heat dissipation member; and a method for producing this thermally conductive sheet product. The present invention provides: a thermally conductive sheet product wherein both surfaces of a fluorine rubber-based thermally conductive sheet are protected from foreign substances and the like, and excellent setting workability is achieved between a heat generation member and a heat dissipation member; and a method for producing this thermally conductive sheet product. A thermally conductive sheet product which is obtained by bonding electrically insulating films to both surfaces of a thermally conductive sheet that is formed of a cured product of a thermally conductive fluorine-containing curable composition containing (A) a linear polyfluoro compound which comprises two or more alkenyl groups in each molecule, while having a perfluoro polyether structure in the main chain, (B) a fluorine-containing organohydrogen siloxane which comprises a perfluoroalkyl group or a perfluorooxyalkyl group in each molecule, or alternatively comprises a perfluoroalkylene group or a perfluorooxyalkylene group, while additionally containing two or more groups (SiH groups), wherein a hydrogen atom is directly bonded to a silicon atom, in each molecule, and which does not comprise an alkoxy group that is directly bonded to a silicon atom in the molecule. (C) a platinum group metal-based catalyst and (D) a specific amount of a thermally conductive filler.

Classes IPC  ?

  • B32B 27/08 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique d'une résine synthétique d'une sorte différente
  • B32B 27/36 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyesters
  • B32B 33/00 - Produits stratifiés caractérisés par des propriétés particulières ou des caractéristiques de surface particulières, p.ex. par des revêtements de surface particuliers; Produits stratifiés conçus pour des buts particuliers non couverts par une seule autre classe
  • B32B 37/24 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par les propriétés des couches avec au moins une couche qui ne présente pas de cohésion avant la stratification, p.ex. constituée de matériau granulaire projeté sur un substrat
  • B32B 37/26 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par les propriétés des couches avec au moins une couche influençant la liaison au cours de la stratification, p.ex. couches anti-adhésives ou couches égalisatrices de la pression
  • B32B 38/00 - Opérations auxiliaires liées aux procédés de stratification

3.

Composition For Forming Silicon-Containing Resist Underlayer Film And Patterning Process

      
Numéro d'application 18594575
Statut En instance
Date de dépôt 2024-03-04
Date de la première publication 2024-09-26
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Sato, Takehiro
  • Kikuchi, Shun
  • Mitsui, Ryo
  • Tachibana, Seiichiro

Abrégé

The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol % or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film. The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol % or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.

Classes IPC  ?

  • G03F 7/075 - Composés contenant du silicium
  • G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
  • G03F 7/16 - Procédés de couchage; Appareillages à cet effet
  • G03F 7/20 - Exposition; Appareillages à cet effet

4.

NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, AND METHOD FOR MANUFACTURING NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY

      
Numéro d'application 18259501
Statut En instance
Date de dépôt 2021-12-07
Date de la première publication 2024-09-26
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Hirose, Takakazu
  • Matsuno, Takumi
  • Osawa, Yusuke
  • Sakai, Reiko
  • Koide, Hiroyuki

Abrégé

A negative electrode active material for non-aqueous electrolyte secondary battery, the material including a negative electrode active material particle, wherein the particle contains a silicon compound particle containing a silicon compound containing oxygen, at least part of a surface of the compound particle is coated with carbon layer, the compound particle contains Li2SiO3 as a Li silicate, the Li2SiO3 is a material wherein at least a part of the Li2SiO3 is to change into Li4SiO4 by charging and discharging the particle once or more, and an abundance ratio of the Li2SiO3 is higher than that of the Li4SiO4 before charging and discharging the particle, and the abundance ratio of the Li4SiO4 is higher than that of the Li2SiO3 after charge and discharge at 100 times. Provided is a material that can achieve increase in battery capacity with improvement of initial efficiency, sufficient battery cycle characteristics, and input characteristics.

Classes IPC  ?

  • H01M 4/58 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de structures polyanioniques, p.ex. phosphates, silicates ou borates
  • C01B 33/32 - Silicates de métaux alcalins
  • H01M 4/02 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif
  • H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
  • H01M 4/587 - Matériau carboné, p.ex. composés au graphite d'intercalation ou CFx pour insérer ou intercaler des métaux légers

5.

ORGANOPOLYSILOXANE AND COSMETIC CONTAINING SAME

      
Numéro d'application 18276477
Statut En instance
Date de dépôt 2022-02-02
Date de la première publication 2024-09-26
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Imai, Taro
  • Miyauchi, Masaru
  • Konishi, Masayuki

Abrégé

Provided is an alkyl-glycerin co-modified branched organopolysiloxane (polyglycerin-modified silicone in which a silicone chain and an alkyl chain are branched at a silicone main chain) having long-chain alkyl groups, glycerin groups, and branched-chain silicone groups, wherein: the organopolysiloxane is an organosiloxane in which the proportions of siloxane units having long-chain alkyl groups, siloxane units having glycerin groups, and siloxane units having branched-chain silicone groups, the chain length of the organopolysiloxane, the ratio of siloxane units, the amount of long-chain alkyl groups, and the amount of glycerin groups are specified; when the organopolysiloxane is blended with a composition containing a powder, the dispersibility and dispersion stability are excellent; and when the organopolysiloxane is blended with a cosmetic, a cosmetic having excellent spreadability and blendability with the skin as well as exceptional stability over time is obtained even when the cosmetic contains an oil-soluble UV absorber.

Classes IPC  ?

  • A61K 8/893 - Polysiloxanes saturés, p.ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone modifiés par un groupe alkoxyle ou aryloxyle, p.ex. béhénoxy diméthicone, stéaroxy diméthicone
  • A61Q 19/00 - Préparations pour les soins de la peau
  • C08G 77/18 - Polysiloxanes contenant du silicium lié à des groupes contenant de l'oxygène à des groupes alcoxyle ou aryloxyle

6.

PASTE-LIKE SILICONE COMPOSITION, METHOD FOR PRODUCING THE SAME, AND COSMETICS

      
Numéro d'application 18576185
Statut En instance
Date de dépôt 2022-05-30
Date de la première publication 2024-09-19
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s) Akabane, Emi

Abrégé

A paste-like silicone composition includes (A) crosslinked organopolysiloxane and (B) oil in a liquid state at 25° C. The component (A) includes a hydrosilylated reaction product of (A-1) organohydrogenpolysiloxane having at least two hydrogen atoms bonded to a silicon atom per molecule, and (A-2) alkenyl group-containing organopolysiloxane having at least two alkenyl groups having 2 to 10 carbon atoms and being bonded to a silicon atom per molecule. Octamethylcyclotetrasiloxane, decamethylcyclopentasiloxane, and dodecamethylcyclohexasiloxane contained in the paste-like silicone composition are each less than 2,000 ppm. It is therefore possible for a stable paste-like silicone composition that has small changes over time such as plasticization return and emit less uncomfortable odor.

Classes IPC  ?

  • A61K 8/895 - Polysiloxanes contenant du silicium lié à un groupe aliphatique non saturé, p.ex. vinyl diméthicone

7.

RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Numéro d'application 18590834
Statut En instance
Date de dépôt 2024-02-28
Date de la première publication 2024-09-19
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s) Hatakeyama, Jun

Abrégé

The present invention relates to a resist composition and a pattern forming process. The quencher is capable of improving the LWR of line patterns or the dimensional uniformity (CDU) of hole patterns and enhancing sensitivity. The resist composition exhibits higher sensitivity and improved LWR and CDU regardless of whether it is of positive or negative tone, and a pattern forming process using the resist composition. The resist composition comprises a quencher containing a disulfonium salt having formula (1). The present invention relates to a resist composition and a pattern forming process. The quencher is capable of improving the LWR of line patterns or the dimensional uniformity (CDU) of hole patterns and enhancing sensitivity. The resist composition exhibits higher sensitivity and improved LWR and CDU regardless of whether it is of positive or negative tone, and a pattern forming process using the resist composition. The resist composition comprises a quencher containing a disulfonium salt having formula (1).

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

8.

Material For Forming Adhesive Film, Patterning Process, And Method For Forming Adhesive Film

      
Numéro d'application 18597316
Statut En instance
Date de dépôt 2024-03-06
Date de la première publication 2024-09-19
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Watabe, Mamoru
  • Iwamori, Shohel
  • Biyajima, Yusuke

Abrégé

The present invention is a material for forming an adhesive film for an adhesive film formed directly under a resist upper layer film, includes: (A) a resin having a structural unit containing an acid-dissociable group and having two or more units represented by the formula (1) where R1 represents a hydrogen atom or a methyl group, and R2 represents a group selected from the formulae (I-1) to (I-3); and (C) an organic solvent, and the material comprises (B) a photo-acid generator and/or the resin (A) having the photo-acid generating unit. This provides a material for forming an adhesive film in a fine patterning process by a multilayer resist method, where the material gives an adhesive film with high adhesiveness to a resist upper layer film, suppresses fine pattern collapse, and can form an excellent pattern profile; a patterning process using the material; and a method for forming the adhesive film. The present invention is a material for forming an adhesive film for an adhesive film formed directly under a resist upper layer film, includes: (A) a resin having a structural unit containing an acid-dissociable group and having two or more units represented by the formula (1) where R1 represents a hydrogen atom or a methyl group, and R2 represents a group selected from the formulae (I-1) to (I-3); and (C) an organic solvent, and the material comprises (B) a photo-acid generator and/or the resin (A) having the photo-acid generating unit. This provides a material for forming an adhesive film in a fine patterning process by a multilayer resist method, where the material gives an adhesive film with high adhesiveness to a resist upper layer film, suppresses fine pattern collapse, and can form an excellent pattern profile; a patterning process using the material; and a method for forming the adhesive film.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/075 - Composés contenant du silicium
  • G03F 7/16 - Procédés de couchage; Appareillages à cet effet
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs

9.

METHOD FOR MANUFACTURING SURFACE-TREATED SOL-GEL SILICA PARTICLE, SURFACE-TREATED SOL-GEL SILICA PARTICLE, AND TONER EXTERNAL ADDITIVE FOR ELECTROSTATIC CHARGE IMAGE DEVELOPMENT

      
Numéro d'application 18277804
Statut En instance
Date de dépôt 2021-12-22
Date de la première publication 2024-09-19
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s) Matsumura, Kazuyuki

Abrégé

A method for manufacturing a surface-treated sol-gel silica particle that can impart good flowability when added into a toner and has little change in charge during environment change; a manufacturing method therefor; and an external additive for a toner containing the surface-treated sol-gel silica particle. The method includes steps of: (A1) obtaining a hydrophilic sol-gel silica particle having a silanol group on a surface and substantially composed of a SiO2 unit; (A2) adding a compound having a (C2H5)3Si— group or a R1R22Si— group, and introducing a (C2H5)3SiO1/2 unit or a R1R22SiO1/2 unit on a surface of the hydrophilic sol-gel silica particle to obtain a preliminarily treated silica particle; and (A3) adding a compound having a R33Si— group, and further introducing a R33SiO1/2 unit on a surface of the preliminarily treated silica particle to obtain a surface-treated sol-gel silica particle.

Classes IPC  ?

10.

ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Numéro d'application 18436721
Statut En instance
Date de dépôt 2024-02-08
Date de la première publication 2024-09-19
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s) Fukushima, Masahiro

Abrégé

An onium salt is provided. The chemically amplified resist composition can be processed by DUV or EUV lithography to form a resist pattern with improved resolution, reduced LWR, and collapse resistance. A resist composition comprising an onium salt having a nitrogen-containing aliphatic heterocycle and an aromatic carboxylic acid structure as a quencher is provided. When processed by deep-UV or EUV lithography, the resist composition exhibits a high resolution and reduced LWR and prevents the resist pattern from collapsing.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

11.

RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Numéro d'application 18590436
Statut En instance
Date de dépôt 2024-02-28
Date de la première publication 2024-09-19
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s) Hatakeyama, Jun

Abrégé

The present invention relates to a resist composition and a pattern forming process. The quencher is capable of improving the LWR of line patterns or the dimensional uniformity (CDU) of hole patterns and enhancing sensitivity. The resist composition comprises a quencher containing a sulfonium salt of a benzoic acid which is substituted with a C2-C14 hydrocarbyloxy group having a trifluoromethyl group.

Classes IPC  ?

  • G03F 7/029 - Composés inorganiques; Composés d'onium; Composés organiques contenant des hétéro-atomes autres que l'oxygène, l'azote ou le soufre
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet

12.

HYDRAULIC COMPOSITION FOR 3D PRINTING AND METHOD OF MANUFACTURING 3D OBJECT

      
Numéro d'application 18595661
Statut En instance
Date de dépôt 2024-03-05
Date de la première publication 2024-09-19
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s) Konishi, Hidekazu

Abrégé

A hydraulic composition comprising (A) a water-soluble hydroxyalkyl alkyl cellulose, (B) a polyacrylamide, (C) cement, (D) water, and (E) short fibers is suitable for 3D printing of the material extrusion process. The composition has satisfactory nozzle extrudability, self-support after lamination, and water retention. A method of manufacturing a three-dimensional object using the hydraulic composition is also provided.

Classes IPC  ?

  • C04B 28/04 - Ciments Portland
  • B33Y 10/00 - Procédés de fabrication additive
  • B33Y 70/00 - Matériaux spécialement adaptés à la fabrication additive
  • C04B 16/06 - Composés macromoléculaires fibreux
  • C04B 24/26 - Composés macromoléculaires obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone
  • C04B 24/38 - Polysaccharides ou leurs dérivés
  • C04B 111/00 - Fonction, propriétés ou utilisation des mortiers, du béton ou de la pierre artificielle

13.

Method For Forming Resist Underlayer Film And Patterning Process

      
Numéro d'application 18601541
Statut En instance
Date de dépôt 2024-03-11
Date de la première publication 2024-09-19
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Kobayashi, Naoki
  • Nagamachi, Nobuhiro
  • Ishiwata, Kenta
  • Kori, Daisuke

Abrégé

The present invention is a method for forming a resist underlayer film, including: a coating step of coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; and a heating step of heating the coated substrate in an atmosphere having an oxygen concentration of less than 1 volume % at a temperature of 450° C. or higher and 800° C. or lower, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method. The present invention is a method for forming a resist underlayer film, including: a coating step of coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; and a heating step of heating the coated substrate in an atmosphere having an oxygen concentration of less than 1 volume % at a temperature of 450° C. or higher and 800° C. or lower, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C09D 161/06 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols d'aldéhydes avec des phénols
  • G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
  • G03F 7/16 - Procédés de couchage; Appareillages à cet effet
  • H01L 21/308 - Traitement chimique ou électrique, p.ex. gravure électrolytique en utilisant des masques
  • H01L 21/311 - Gravure des couches isolantes

14.

COMPOSITION INCLUDING ORGANOSILICON COMPOUND, RUBBER COMPOUNDING AGENT, AND RUBBER COMPOSITION

      
Numéro d'application 18272201
Statut En instance
Date de dépôt 2021-12-14
Date de la première publication 2024-09-12
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Hirokami, Munenao
  • Kimura, Tsuneo
  • Minemura, Masahiko
  • Nakamura, Tsutomu
  • Tonomura, Yoichi
  • Ichii, Shun
  • Yano, Masashi

Abrégé

When a composition including (A) an organosilicon compound represented by formula 1 and (B) when an organosilicon compound having at least one group selected from a polysulfide group, a thioester group, and a mercapto group and having an alkoxysilyl group is added to a rubber composition, a rubber composition is imparted that can achieve low fuel consumption and wear resistance while the workability of the composition and the hardness and tensile properties of cured products thereof are maintained. When a composition including (A) an organosilicon compound represented by formula 1 and (B) when an organosilicon compound having at least one group selected from a polysulfide group, a thioester group, and a mercapto group and having an alkoxysilyl group is added to a rubber composition, a rubber composition is imparted that can achieve low fuel consumption and wear resistance while the workability of the composition and the hardness and tensile properties of cured products thereof are maintained. When a composition including (A) an organosilicon compound represented by formula 1 and (B) when an organosilicon compound having at least one group selected from a polysulfide group, a thioester group, and a mercapto group and having an alkoxysilyl group is added to a rubber composition, a rubber composition is imparted that can achieve low fuel consumption and wear resistance while the workability of the composition and the hardness and tensile properties of cured products thereof are maintained. (R1 and R2 independently represent an alkyl group or an aryl group, R3 represents a hydrogen atom, an alkyl group, or an aryl group, R4 independently represents a hydrogen atom or a hydrocarbon group that may have a substituent other than a sulfur atom-containing group and may include a heteroatom other than a sulfur atom (adjacent R4 may crosslink with one another to form a ring), Z represents a divalent group not having a polysulfide group, a thioester group, or a mercapto group, and n represents an integer of 1-3.)

Classes IPC  ?

  • C08K 5/544 - Composés contenant du silicium contenant de l'azote
  • B60C 1/00 - Pneumatiques caractérisés par la composition chimique, la disposition ou le mélange physique de la composition
  • C08K 3/36 - Silice
  • C08K 5/549 - Composés contenant du silicium contenant du silicium dans un cycle

15.

FILM-FORMING MATERIAL, FILM-FORMING SLURRY, SPRAY COATED FILM, AND SPRAY COATED MEMBER

      
Numéro d'application 18273086
Statut En instance
Date de dépôt 2021-12-22
Date de la première publication 2024-09-12
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Iwasaki, Ryo
  • Kimura, Yuji
  • Nakamura, Shigeyuki
  • Nakano, Hajime
  • Maruko, Kohei

Abrégé

The film is formed using one of two film-forming materials. The first film-forming material contains: particles containing a crystal phase of a rare earth element fluoride; particles containing a crystal phase of a rare earth element oxide; and particles containing a crystal phase of a rare earth element ammonium fluoride double salt. The second film-forming material contains: particles containing a crystal phase of a rare earth element fluoride; and particles containing a crystal phase of a rare earth element oxide and a crystal phase of a rare earth element ammonium fluoride double salt. If a spray coated film is to be formed by means of thermal spraying using this film-forming material or film-forming slurry in particular, it is possible to form a rare earth element oxyfluoride spray coated film without the need for excessive heat.

Classes IPC  ?

16.

COSMETIC

      
Numéro d'application 18595636
Statut En instance
Date de dépôt 2024-03-05
Date de la première publication 2024-09-12
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s) Mizuno, Akiko

Abrégé

The inventive cosmetic includes; (A) organosiloxane represented by the following formula (1), and having a boiling point in a range of 205 to 255° C. and a kinematic viscosity at 25° C. of less than 5 mm2/s; and (B) volatile oil having a kinematic viscosity at 25° C. of 2 mm2/s or less, excluding the component (A). The inventive cosmetic includes; (A) organosiloxane represented by the following formula (1), and having a boiling point in a range of 205 to 255° C. and a kinematic viscosity at 25° C. of less than 5 mm2/s; and (B) volatile oil having a kinematic viscosity at 25° C. of 2 mm2/s or less, excluding the component (A). The inventive cosmetic includes; (A) organosiloxane represented by the following formula (1), and having a boiling point in a range of 205 to 255° C. and a kinematic viscosity at 25° C. of less than 5 mm2/s; and (B) volatile oil having a kinematic viscosity at 25° C. of 2 mm2/s or less, excluding the component (A). wherein, R each independently may be identical to or different from one another and represents a group selected from the group consisting of a hydrogen group, a hydroxy group, and a monovalent hydrocarbon group having 1 to 3 carbon atoms. “a” is an integer from 1 to 5. It is provided that at least one of R is a monovalent hydrocarbon group having 2 or 3 carbon atoms. This cosmetic can provide a light feeling, good spreadability and a uniform cosmetic film, and exhibit excellent stability over time and excellent cosmetic durability.

Classes IPC  ?

  • A61K 8/891 - Polysiloxanes saturés, p.ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone
  • A61K 8/894 - Polysiloxanes saturés, p.ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone modifiés par un groupe polyoxyalkylène, p.ex. cétyl diméthicone copolyol
  • A61Q 1/02 - Préparations contenant des colorants cutanés, p.ex. pigments
  • A61Q 1/06 - Rouges à lèvres
  • A61Q 1/10 - Préparations contenant des colorants cutanés, p.ex. pigments pour les yeux, p.ex. eye-liner, mascara
  • A61Q 17/04 - Préparations topiques pour faire écran au soleil ou aux radiations; Préparations topiques pour bronzer

17.

SULFONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Numéro d'application 18426723
Statut En instance
Date de dépôt 2024-01-30
Date de la première publication 2024-09-12
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Yamahira, Tatsuya
  • Hatakeyama, Jun
  • Fujiwara, Takayuki
  • Suda, Yuki

Abrégé

A sulfonium salt consisting of a carboxylate anion having a hydroxy group and fluorine or trifluoromethyl at α- or β-position and a phenyldibenzothiophenium cation having a hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group has a high decomposition efficiency and a high acid diffusion controlling ability upon exposure. A resist composition comprising the sulfonium salt offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07C 59/115 - Composés saturés ne comportant qu'un groupe carboxyle et contenant des groupes hydroxyle ou O-métal contenant des atomes d'halogène
  • C07D 333/76 - Dibenzothiophènes
  • G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
  • G03F 7/20 - Exposition; Appareillages à cet effet

18.

AQUEOUS DISPERSION OF SILICONE RUBBER PARTICLES AND COSMETICS

      
Numéro d'application 18550027
Statut En instance
Date de dépôt 2022-03-10
Date de la première publication 2024-09-12
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Inokuchi, Yoshinori
  • Konishi, Masayuki
  • Horiguchi, Ryuji

Abrégé

[Problem] An object of the present invention is to provide an aqueous dispersion of silicone rubber spherical particles having excellent oil absorptiveness, relative to certain oil materials, specifically hydrocarbon oils or ester oils, and cosmetics to which the aqueous dispersion is added, having excellent use feeling, finish, adherence, and sebum resistance. [Problem] An object of the present invention is to provide an aqueous dispersion of silicone rubber spherical particles having excellent oil absorptiveness, relative to certain oil materials, specifically hydrocarbon oils or ester oils, and cosmetics to which the aqueous dispersion is added, having excellent use feeling, finish, adherence, and sebum resistance. [Solutions to the problems] An aqueous dispersion of silicone rubber particles comprising (A) a silicone rubber particle being an addition reaction product of (A-1) an organohydrogenpolysiloxane and (A-2) an organopolysiloxane having a monovalent olefin hydrocarbon group, wherein at least one of component (A-1) and component (A-2) has monovalent aliphatic saturated hydrocarbon groups having 6 to 30 carbon atoms, each bonded to a silicon atom, in a percentage of 5% to 70%, based on the total number of all substituents each bonded to a silicon atom, in an amount of 5% by mass to 80% by mass, based on a total mass of the aqueous dispersion; (B) at least one surfactant in an amount of 0.01% by mass to 15% by mass, based on a total mass of the aqueous dispersion; and (C) water in an amount of 19% by mass to 94% by mass, based on a total mass of the aqueous dispersion.

Classes IPC  ?

  • C08L 83/14 - Compositions contenant des composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du silicium, avec ou sans soufre, azote, oxygène ou carbone; Compositions contenant des dérivés de tels polymères dans lesquels au moins deux atomes de silicium, mais pas la totalité sont liés autrement que par des atomes d'oxygène
  • A61K 8/891 - Polysiloxanes saturés, p.ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone
  • A61Q 1/00 - Préparations pour le maquillage; Poudres corporelles; Préparations pour le démaquillage
  • A61Q 1/10 - Préparations contenant des colorants cutanés, p.ex. pigments pour les yeux, p.ex. eye-liner, mascara
  • A61Q 17/04 - Préparations topiques pour faire écran au soleil ou aux radiations; Préparations topiques pour bronzer
  • A61Q 19/00 - Préparations pour les soins de la peau

19.

FURANYL GROUP-CONTAINING ORGANOPOLYSILOXANE AND PRODUCTION METHOD THEREOF

      
Numéro d'application 18569125
Statut En instance
Date de dépôt 2022-06-07
Date de la première publication 2024-09-12
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s) Fujita, Shoji

Abrégé

Provided are a furanyl group-containing organopolysiloxane that is flexible due to (poly)siloxane and contains furanyl groups having photocrosslinkability. The furanyl group-containing organopolysiloxane is represented by the following average composition formula (1), and has a number average molecular weight of 500 to 40,000, Provided are a furanyl group-containing organopolysiloxane that is flexible due to (poly)siloxane and contains furanyl groups having photocrosslinkability. The furanyl group-containing organopolysiloxane is represented by the following average composition formula (1), and has a number average molecular weight of 500 to 40,000, wherein R1 represents a monovalent hydrocarbon group, etc., or a furanyl group expressed by the following general formula (2) or (3), in which at least one R per molecule is the furanyl group expressed by the following general formula (2) or (3); a is a number of not smaller than 2, b is a number of not smaller than 0, c is a number of not smaller than 0, d is a number of not smaller than 0, and a, b, c and d satisfy 2≤a+b+c+d≤1,000, Provided are a furanyl group-containing organopolysiloxane that is flexible due to (poly)siloxane and contains furanyl groups having photocrosslinkability. The furanyl group-containing organopolysiloxane is represented by the following average composition formula (1), and has a number average molecular weight of 500 to 40,000, wherein R1 represents a monovalent hydrocarbon group, etc., or a furanyl group expressed by the following general formula (2) or (3), in which at least one R per molecule is the furanyl group expressed by the following general formula (2) or (3); a is a number of not smaller than 2, b is a number of not smaller than 0, c is a number of not smaller than 0, d is a number of not smaller than 0, and a, b, c and d satisfy 2≤a+b+c+d≤1,000, wherein R2 or R3 represents a hydrogen atom, or a monovalent hydrocarbon group, etc.; the broken lines represent bonds.

Classes IPC  ?

  • C08G 77/14 - Polysiloxanes contenant du silicium lié à des groupes contenant de l'oxygène
  • B01J 23/46 - Ruthénium, rhodium, osmium ou iridium
  • C08G 77/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone

20.

ORGANOPOLYSILOXANE AND PRODUCTION METHOD THEREOF

      
Numéro d'application 18572967
Statut En instance
Date de dépôt 2022-06-28
Date de la première publication 2024-09-12
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Fujita, Shoji
  • Watanabe, Takuma

Abrégé

Provided are an organopolysiloxane in which arrangements of diphenylsiloxy units in the siloxane sequence are controlled to achieve a low proportion of arrangements where the diphenylsiloxy unit-containing siloxanes are consecutive; and a method for producing such organopolysiloxane. The organopolysiloxane is such that low-molecular siloxanes having a weight-average molecular weight of not higher than 700 are contained at a ratio of not larger than 10% by mass, and that a proportion of arrangements where diphenylsiloxy units are consecutive relative to all diphenylsiloxy units is not higher than 5 mol %.

Classes IPC  ?

  • C08G 77/08 - Procédés de préparation caractérisés par les catalyseurs utilisés
  • C08G 77/00 - Composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant du silicium, avec ou sans soufre, azote, oxygène ou carbone

21.

ORGANOALKOXYSILANE-CONTAINING COMPOSITION AND METHOD FOR MANUFACTURING THE SAME, AND WATER-ABSORPTION INHIBITOR

      
Numéro d'application 18698857
Statut En instance
Date de dépôt 2022-09-20
Date de la première publication 2024-09-12
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s) Fukamachi, Takumi

Abrégé

An organoalkoxysilane-containing composition including: (A) an organohydrogenpolysiloxane having a structural unit selected from the group consisting of SiO2, HSiO1.5, R1SiO1.5, R1HSiO, R12SiO, R12HSiO0.5, and R13SiO0.5; (B) an organopolysiloxane having a structural unit selected from the group consisting of SiO2, R2SiO1.5, R1SiO1.5, R1R2SiO, R12SiO, R13SiO0.5, and R12R2SiO0.5, wherein R1 represents a monovalent hydrocarbon group except for an aliphatic unsaturated group, and R2 represents an alkenyl group; and (C) an organoalkoxysilane represented by R3aSi(OR4)4-a and/or a partial hydrolytic condensate thereof, wherein an amount of (C) is 100 to 10,000 parts by mass relative to 100 parts by mass of a total amount of (A) and (B). This provides a composition that can be a water-absorption inhibitor that can impart an excellent water-absorption inhibiting property to a surface of a structural material.

Classes IPC  ?

  • C08L 83/04 - Polysiloxanes
  • B05D 5/08 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers pour obtenir une surface antifriction ou anti-adhésive
  • C08L 101/10 - Compositions contenant des composés macromoléculaires non spécifiés caractérisées par la présence de groupes déterminés contenant des groupes silane hydrolysables
  • C09D 183/04 - Polysiloxanes

22.

Patterning Process

      
Numéro d'application 18440692
Statut En instance
Date de dépôt 2024-02-13
Date de la première publication 2024-09-05
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Kobayashi, Naoki
  • Iwamori, Shohei
  • Kori, Daisuke
  • Ishiwata, Kenta

Abrégé

A patterning process capable of readily and efficiently forming a fine pattern without damaging a substrate is provided. The patterning process includes: forming an organic underlayer film, a tin-containing middle layer film, and an upper layer resist film on a substrate to be processed; forming an upper layer resist pattern; transferring the upper layer resist pattern to the tin-containing middle layer film, and forming an organic underlayer film pattern on an upper portion of which a portion of the tin-containing middle layer film is left; removing the portion of the tin-containing middle layer film by dry-etching; forming an inorganic silicon-containing film so as to cover the organic underlayer film pattern; exposing the upper portion of the organic underlayer film pattern; removing the organic underlayer film pattern to form an inorganic silicon-containing film pattern with a pattern pitch that is ½ of that of the upper layer resist pattern; and processing the substrate to be processed while using the inorganic silicon-containing film pattern as a mask to form a pattern in the substrate to be processed.

Classes IPC  ?

  • H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
  • C23C 16/02 - Pré-traitement du matériau à revêtir
  • C23C 16/04 - Revêtement de parties déterminées de la surface, p.ex. au moyen de masques
  • C23C 16/40 - Oxydes
  • C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
  • C23C 16/56 - Post-traitement
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/16 - Procédés de couchage; Appareillages à cet effet
  • H01L 21/308 - Traitement chimique ou électrique, p.ex. gravure électrolytique en utilisant des masques
  • H01L 21/311 - Gravure des couches isolantes

23.

THERMALLY CONDUCTIVE SILICONE COMPOSITION AND CURED PRODUCT THEREOF

      
Numéro d'application 18566236
Statut En instance
Date de dépôt 2022-05-31
Date de la première publication 2024-09-05
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s) Tsukada, Junichi

Abrégé

Provided is a thermally conductive silicone composition capable of being turned into a cured product that is superior in heat dissipation property and is able to suppress corrosion of metal wirings. The thermally conductive silicone composition contains: (A) an organopolysiloxane having at least 2 silicon atom-bonded alkenyl groups per molecule, and having a kinetic viscosity of 10 to 100,000 mm2/s at 25° C.; (B) an organohydrogenpolysiloxane having, per molecule, at least 2 hydrogen atoms that are directly bonded to silicon atoms; (C) a thermally conductive filler having a thermal conductivity of not lower than 10 W/m·K; (D) a dimethylpolysiloxane with one molecular chain end being blocked by a trialkoxy group; (E) a platinum group metal-based curing catalyst; (F) benzotriazole and/or a benzotriazole derivative; and (G) an aliphatic unsaturated bond-free organopolysiloxane.

Classes IPC  ?

24.

MANUFACTURING METHOD OF POROUS GLASS BASE MATERIAL FOR OPTICAL FIBER AND MANUFACTURING APPARATUS

      
Numéro d'application 18646771
Statut En instance
Date de dépôt 2024-04-26
Date de la première publication 2024-09-05
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Noda, Naoto
  • Inoue, Dai
  • Iinuma, Hitoshi
  • Mizukami, Hiromasa

Abrégé

In a method of manufacturing porous glass base for optical fiber, a liquid organic siloxane raw material stored in a raw material tank of internal pressure P1 is controlled by a mass flow controller at a predetermined flow rate and pumped through pipe of internal pressure P2 to a vaporizer, the liquid raw material is vaporized in the vaporizer and supplied as a gas raw material to a burner, and the silica fine particles formed by burning the gas raw material in the burner are deposited to form a porous glass base material, where P1≤P2 is satisfied.

Classes IPC  ?

  • C03B 37/018 - Fabrication d'ébauches d'étirage de fibres ou de filaments obtenues totalement ou partiellement par des moyens chimiques par dépôt de verre sur un substrat de verre, p.ex. par dépôt chimique en phase vapeur

25.

Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process

      
Numéro d'application 18440742
Statut En instance
Date de dépôt 2024-02-13
Date de la première publication 2024-09-05
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Iwamori, Shohei
  • Kobayashi, Naoki
  • Kori, Daisuke

Abrégé

The present invention is a compound for forming a metal-containing film, represented by the following general formula (M), where T's each represent a unit represented by the following general formula (1); Q represents a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aliphatic unsaturated organic group having 2 to 20 carbon atoms and having one or more double bonds or triple bonds, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted arylalkyl group having 7 to 31 carbon atoms, or a combination of these groups; and RA represents an organic group whose protecting group is to be removed by an action of an acid, heat, or both to generate one or more hydroxy groups or carboxyl groups. This provides a compound for forming a metal-containing film that can provide a composition for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties. The present invention is a compound for forming a metal-containing film, represented by the following general formula (M), where T's each represent a unit represented by the following general formula (1); Q represents a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aliphatic unsaturated organic group having 2 to 20 carbon atoms and having one or more double bonds or triple bonds, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted arylalkyl group having 7 to 31 carbon atoms, or a combination of these groups; and RA represents an organic group whose protecting group is to be removed by an action of an acid, heat, or both to generate one or more hydroxy groups or carboxyl groups. This provides a compound for forming a metal-containing film that can provide a composition for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties.

Classes IPC  ?

  • H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
  • C07F 7/22 - Composés de l'étain
  • C23C 16/30 - Dépôt de composés, de mélanges ou de solutions solides, p.ex. borures, carbures, nitrures
  • C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
  • C23C 16/56 - Post-traitement
  • G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
  • G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/16 - Procédés de couchage; Appareillages à cet effet
  • H01L 21/308 - Traitement chimique ou électrique, p.ex. gravure électrolytique en utilisant des masques
  • H01L 21/311 - Gravure des couches isolantes

26.

LIQUID COMPOSITION FOR SILICONE RUBBER SPHERICAL PARTICLE, SILICONE RUBBER SPHERICAL PARTICLE AND METHOD FOR MANUFACTURING THE SAME, AND SILICONE COMPOSITE PARTICLE AND METHOD FOR MANUFACTURING THE SAME

      
Numéro d'application 18572836
Statut En instance
Date de dépôt 2022-06-14
Date de la première publication 2024-09-05
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Oki, Takahito
  • Inokuchi, Yoshinori
  • Aoki, Shunji
  • Kimura, Tsuneo

Abrégé

A liquid composition for a silicone rubber spherical particle including (A) a polysiloxane represented by the general formula (1) and having at least two alkenyl groups per molecule, (B) an organohydrogenpolysiloxane represented by the general formula (2) and having at least two hydrogen atoms bonded to a silicon atom per molecule, and (C) a hydrosilylation-reaction catalyst. A liquid composition for a silicone rubber spherical particle including (A) a polysiloxane represented by the general formula (1) and having at least two alkenyl groups per molecule, (B) an organohydrogenpolysiloxane represented by the general formula (2) and having at least two hydrogen atoms bonded to a silicon atom per molecule, and (C) a hydrosilylation-reaction catalyst. A liquid composition for a silicone rubber spherical particle including (A) a polysiloxane represented by the general formula (1) and having at least two alkenyl groups per molecule, (B) an organohydrogenpolysiloxane represented by the general formula (2) and having at least two hydrogen atoms bonded to a silicon atom per molecule, and (C) a hydrosilylation-reaction catalyst. (R1 is an alkenyl group. R2 is a divalent hydrocarbon group. R3 is an alkyl group or an alkenyl group. X is an ester group. “n” satisfies 1≤n≤1000.) A liquid composition for a silicone rubber spherical particle including (A) a polysiloxane represented by the general formula (1) and having at least two alkenyl groups per molecule, (B) an organohydrogenpolysiloxane represented by the general formula (2) and having at least two hydrogen atoms bonded to a silicon atom per molecule, and (C) a hydrosilylation-reaction catalyst. (R1 is an alkenyl group. R2 is a divalent hydrocarbon group. R3 is an alkyl group or an alkenyl group. X is an ester group. “n” satisfies 1≤n≤1000.) A liquid composition for a silicone rubber spherical particle including (A) a polysiloxane represented by the general formula (1) and having at least two alkenyl groups per molecule, (B) an organohydrogenpolysiloxane represented by the general formula (2) and having at least two hydrogen atoms bonded to a silicon atom per molecule, and (C) a hydrosilylation-reaction catalyst. (R1 is an alkenyl group. R2 is a divalent hydrocarbon group. R3 is an alkyl group or an alkenyl group. X is an ester group. “n” satisfies 1≤n≤1000.) (R4 represents a hydrogen atom, a monovalent hydrocarbon group, or an alkoxy group. R5 represents a monovalent hydrocarbon group. “p”, “q”, and “r” satisfy 0≤p≤200, 1≤q≤200, and 0≤r≤200, respectively.)

Classes IPC  ?

  • C08J 3/16 - Pulvérisation ou granulation par coagulation de dispersions
  • C08J 3/12 - Pulvérisation ou granulation

27.

BIO-ELECTRODE, PRODUCTION METHOD FOR BIO-ELECTRODE, AND MEASUREMENT METHOD FOR BIO-SIGNAL

      
Numéro d'application 18029497
Statut En instance
Date de dépôt 2021-12-24
Date de la première publication 2024-09-05
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Hatakeyama, Jun
  • Iwabuchi, Motoaki
  • Ikeda, Joe
  • Watanabe, Osamu
  • Nonaka, Shiori
  • Hasegawa, Koji

Abrégé

A bio-electrode includes a porous, stretchy base material, an adhesive, conductive film containing silicon, and a conducting path. The conductive film is formed on one surface of the porous, stretchy base material. The conducting path is connected to the conductive film, and penetrates the stretchy base material to be exposed on the opposite side. This enables provision of the bio-electrode that has high sensitivity to a bio-signal and excellent bio-compatibility, that is lightweight, that can be produced at low cost, that is free of itching, red spots, and rash of the skin and comfortable even when being wet, dried, or attached to the skin for a long period of time, without a significant decrease in sensitivity to the bio-signal, a production method for the bio-electrode, and a measurement method for a bio-signal.

Classes IPC  ?

  • A61B 5/259 - Moyens adhésifs, p.ex. garnitures ou bandes adhésives conducteurs, p.ex. gels
  • A61B 5/265 - Détection, mesure ou enregistrement de signaux bioélectriques ou biomagnétiques du corps ou de parties de celui-ci Électrodes bioélectriques à cet effet caractérisées par les matériaux des électrodes contenant de l’argent ou du chlorure d’argent
  • A61B 5/268 - Détection, mesure ou enregistrement de signaux bioélectriques ou biomagnétiques du corps ou de parties de celui-ci Électrodes bioélectriques à cet effet caractérisées par les matériaux des électrodes contenant des polymères conducteurs, p.ex. des polymères PEDOT:PSS
  • A61B 5/28 - Détection, mesure ou enregistrement de signaux bioélectriques ou biomagnétiques du corps ou de parties de celui-ci Électrodes bioélectriques à cet effet spécialement adaptées à des utilisations particulières pour l’électrocardiographie [ECG]

28.

ARTICLE HAVING WATER- AND OIL-REPELLENT SURFACE LAYER

      
Numéro d'application 18294696
Statut En instance
Date de dépôt 2022-07-26
Date de la première publication 2024-08-29
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Uchida, Takashi
  • Hayashi, Ryuto
  • Yamane, Yuji

Abrégé

The present invention provides an article having a water- and oil-repellent surface layer, as well as excellent water- and oil-repellent properties, abrasion resistance (resistance to abrasion by eraser), and slipperiness, said article being constituted from: a glass substrate; an underlayer formed upon the outer surface of the glass substrate and having a silicon oxide as the main component thereof; and a water- and oil-repellent surface layer formed upon the outer surface of the silicon oxide underlayer. The film density of the silicon oxide underlayer is 1.8-2.2 g/cm3. The water- and oil-repellent surface layer has, as the main component thereof: a fluoropolyether group-containing polymer having a hydrolyzable silyl group with a specific structure; and/or a cured product of a partially hydrolyzed condensate thereof.

Classes IPC  ?

  • C03C 17/42 - Traitement de surface du verre, p.ex. du verre dévitrifié, autre que sous forme de fibres ou de filaments, par revêtement avec au moins deux revêtements ayant des compositions différentes un revêtement au moins étant une substance organique et un revêtement au moins étant un non-métal
  • C03C 23/00 - Autres traitements de surface du verre, autre que sous forme de fibres ou de filaments
  • C08G 65/336 - Polymères modifiés par post-traitement chimique avec des composés organiques contenant du silicium
  • C09D 5/16 - Peintures antisalissures; Peintures subaquatiques
  • C09D 171/00 - Compositions de revêtement à base de polyéthers obtenus par des réactions créant une liaison éther dans la chaîne principale; Compositions de revêtement à base de dérivés de tels polymères

29.

Bio-Electrode And Method For Manufacturing Bio-Electrode

      
Numéro d'application 18427617
Statut En instance
Date de dépôt 2024-01-30
Date de la première publication 2024-08-29
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s) Hatakeyama, Jun

Abrégé

The present invention is a bio-electrode includes an electro-conductive polymer composite layer, an electro-conductive layer (C), and a substrate (D). The electro-conductive polymer composite layer consists of an electro-conductive polymer composite which includes (A) a π-conjugated polymer and (B) a dopant polymer. The substrate (D) has a transmittance of 20% or more at a wavelength of 600 nm and is yellow-red (YR) with a value in the range of 1 to 9 and a chroma in the range of 1 to 12 in the Munsell color system. This provides: a bioelectrode which is thin film, highly transparent, slightly different from the skin in color, highly sensitive to biological signals, excellent in biocompatibility, light-weight, manufacturable at low cost, capable of preventing significant reduction in the sensitivity to biological signals when wetted with water or dried and when attached on the skin for a long time; and a method for manufacturing the bio-electrode.

Classes IPC  ?

  • A61B 5/268 - Détection, mesure ou enregistrement de signaux bioélectriques ou biomagnétiques du corps ou de parties de celui-ci Électrodes bioélectriques à cet effet caractérisées par les matériaux des électrodes contenant des polymères conducteurs, p.ex. des polymères PEDOT:PSS
  • C09D 5/24 - Peintures électriquement conductrices
  • C09D 7/65 - Adjuvants macromoléculaires
  • C09D 125/18 - Homopolymères ou copolymères de monomères aromatiques contenant des éléments autres que le carbone et l'hydrogène
  • C09D 133/16 - Homopolymères ou copolymères d'esters contenant des atomes d'halogène

30.

PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD

      
Numéro d'application 18568131
Statut En instance
Date de dépôt 2022-03-31
Date de la première publication 2024-08-29
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Maruyama, Hitoshi
  • Hayashi, Kumiko

Abrégé

Provided is a photosensitive resin composition comprising: (A) a silicone resin having an epoxy group and/or a phenolic hydroxyl group; (B) a photoacid generator represented by formula (B); and (C) a benzotriazole compound. Provided is a photosensitive resin composition comprising: (A) a silicone resin having an epoxy group and/or a phenolic hydroxyl group; (B) a photoacid generator represented by formula (B); and (C) a benzotriazole compound.

Classes IPC  ?

31.

ORGANOPOLYSILOXANE-MODIFIED CYCLODEXTRIN COMPOUND, METHOD FOR PRODUCING SAME, AND COSMETIC CONTAINING SAME

      
Numéro d'application 18570695
Statut En instance
Date de dépôt 2022-06-10
Date de la première publication 2024-08-29
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s) Kamei, Masanao

Abrégé

Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same. Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same. This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same. This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same. This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) [in the formula, each R is independently a hydrogen atom, a C1-C20 alkyl group, a C1-C22 carboxylic acid ester residue, a group represented by formula (2), Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same. This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) [in the formula, each R is independently a hydrogen atom, a C1-C20 alkyl group, a C1-C22 carboxylic acid ester residue, a group represented by formula (2), Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same. This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) [in the formula, each R is independently a hydrogen atom, a C1-C20 alkyl group, a C1-C22 carboxylic acid ester residue, a group represented by formula (2), or a group represented by formula (3), Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same. This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) [in the formula, each R is independently a hydrogen atom, a C1-C20 alkyl group, a C1-C22 carboxylic acid ester residue, a group represented by formula (2), or a group represented by formula (3), Provided are: an organopolysiloxane-modified cyclodextrin compound to be described below; and a cosmetic containing the same. This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) [in the formula, each R is independently a hydrogen atom, a C1-C20 alkyl group, a C1-C22 carboxylic acid ester residue, a group represented by formula (2), or a group represented by formula (3), X is —CH2CH2O— or —CH2CH(CH3)O—, and m is 0 or 1], and has an adjusted amount of a substituent.

Classes IPC  ?

  • C08B 37/16 - Cyclodextrine; Ses dérivés
  • A61K 8/893 - Polysiloxanes saturés, p.ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone modifiés par un groupe alkoxyle ou aryloxyle, p.ex. béhénoxy diméthicone, stéaroxy diméthicone
  • A61Q 1/10 - Préparations contenant des colorants cutanés, p.ex. pigments pour les yeux, p.ex. eye-liner, mascara
  • A61Q 19/00 - Préparations pour les soins de la peau

32.

POLYURETHANE, METHOD FOR PRODUCING POLYURETHANE, CONDUCTIVE PASTE COMPOSITION, CONDUCTIVE WIRE, AND METHOD FOR PRODUCING CONDUCTIVE WIRE

      
Numéro d'application 18024386
Statut En instance
Date de dépôt 2022-08-08
Date de la première publication 2024-08-29
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Nonaka, Shiori
  • Hasegawa, Koji
  • Watanabe, Osamu

Abrégé

A polyurethane contains a phenolic hydroxyl group represented by the following general formula (1A). Thus, the present invention provides: a conductive paste composition for forming a stretchable conductive wire which varies slightly in electric conductivity at the time of elongation and shrinkage; and a polyurethane providing the composition. A polyurethane contains a phenolic hydroxyl group represented by the following general formula (1A). Thus, the present invention provides: a conductive paste composition for forming a stretchable conductive wire which varies slightly in electric conductivity at the time of elongation and shrinkage; and a polyurethane providing the composition.

Classes IPC  ?

33.

ANISOTROPIC FILM AND METHOD FOR MANUFACTURING ANISOTROPIC FILM

      
Numéro d'application 18417333
Statut En instance
Date de dépôt 2024-01-19
Date de la première publication 2024-08-29
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Iguchi, Hiroyuki
  • Shiobara, Toshio
  • Kashiwagi, Tsutomu

Abrégé

An anisotropic electro-conductive film having high reliability, which electrically connects circuit electrodes having a fine pattern. The anisotropic film contains an insulating resin and particle groups. The particle groups are groups of particles in which a plurality of particles are bound together with a binder. The particle groups are regularly arranged with an interval of 1 μm to 1,000 μm.

Classes IPC  ?

  • B29C 43/02 - Moulage par pressage, c. à d. en appliquant une pression externe pour faire couler la matière à mouler; Appareils à cet effet pour la fabrication d'objets de longueur définie, c. à d. d'objets séparés
  • B29C 43/00 - Moulage par pressage, c. à d. en appliquant une pression externe pour faire couler la matière à mouler; Appareils à cet effet
  • B29K 79/00 - Utilisation comme matière de moulage d'autres polymères contenant dans la chaîne principale uniquement de l'azote avec ou sans oxygène ou carbone
  • B29K 509/00 - Utilisation de matériaux inorganiques non prévus dans les groupes  comme matière de remplissage
  • B29L 31/34 - Appareils électriques, p.ex. bougies ou leurs parties constitutives
  • H01B 1/22 - Matériau conducteur dispersé dans un matériau organique non conducteur le matériau conducteur comportant des métaux ou des alliages

34.

ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS

      
Numéro d'application 18404506
Statut En instance
Date de dépôt 2024-01-04
Date de la première publication 2024-08-22
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Fukushima, Masahiro
  • Watanabe, Satoshi
  • Masunaga, Keiichi
  • Kotake, Masaaki
  • Matsuzawa, Yuta

Abrégé

This invention relates to an onium salt, a chemically amplified positive resist composition, and a resist pattern forming process. The invention provides an onium salt capable of generating an acid having an adequate acid strength and low diffusion, a chemically amplified positive resist composition comprising the onium salt, and a resist pattern forming process using the composition. The chemically amplified positive resist composition comprises an onium salt capable of generating an acid having an adequate acid strength and suppressed diffusion is provided.

Classes IPC  ?

  • G03F 7/004 - Matériaux photosensibles
  • C07C 25/18 - Hydrocarbures halogénés aromatiques polycycliques
  • C07C 309/43 - Acides sulfoniques ayant des groupes sulfo liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné contenant des atomes d'oxygène, liés par des liaisons simples, liés au squelette carboné ayant au moins un des groupes sulfo lié à un atome de carbone d'un cycle aromatique à six chaînons faisant partie d'un système cyclique condensé
  • C07C 309/73 - Esters d'acides sulfoniques ayant des atomes de soufre de groupes sulfo estérifiés liés à des atomes de carbone de cycles aromatiques à six chaînons d'un squelette carboné à des atomes de carbone de cycles aromatiques à six chaînons non condensés
  • C07C 381/12 - Composés sulfonium
  • C07D 327/08 - Cycles à six chaînons condensés en [b, e] avec deux carbocycles à six chaînons
  • C07D 333/76 - Dibenzothiophènes
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons

35.

Bio-Electrode, And Method For Manufacturing The Same

      
Numéro d'application 18407117
Statut En instance
Date de dépôt 2024-01-08
Date de la première publication 2024-08-22
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Hatakeyama, Jun
  • Ikeda, Joe

Abrégé

The present invention is a bio-electrode having layers on a substrate, wherein the layers include: (A) an electro-conductive layer including an electro-conductive wiring having a width of 200 μm or less; and (B) an ionic polymer containing layer including a polymer including a repeating unit-a having at least one selected from fluorosulfonic acid, fluorosulfonimide, and N-carbonyl-fluorosulfonamide, and having the weight-average molecular weight in a range of 1,000 to 500,000. This provides: a bio-electrode that allows thin, highly transparent, highly sensitive to a biological signal, excellent in biocompatibility, light-weight, manufacturable at low cost, capable of preventing significant reduction in the sensitivity to biological signals even when attached on the skin for a long time and when wetted with water or dried, and comfortable without itching, reddening, nor rash of skin; and a method for manufacturing a bio-electrode.

Classes IPC  ?

  • A61B 5/268 - Détection, mesure ou enregistrement de signaux bioélectriques ou biomagnétiques du corps ou de parties de celui-ci Électrodes bioélectriques à cet effet caractérisées par les matériaux des électrodes contenant des polymères conducteurs, p.ex. des polymères PEDOT:PSS
  • C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes
  • C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
  • C08F 220/28 - Esters contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle ne contenant pas de cycles aromatiques dans la partie alcool
  • C08F 220/38 - Esters contenant du soufre
  • C08F 220/58 - Amides contenant de l'oxygène en plus de l'oxygène de la fonction carbonamide
  • C09D 5/24 - Peintures électriquement conductrices
  • C09D 125/18 - Homopolymères ou copolymères de monomères aromatiques contenant des éléments autres que le carbone et l'hydrogène
  • C09D 133/06 - Homopolymères ou copolymères d'esters d'esters ne contenant que du carbone, de l'hydrogène et de l'oxygène, l'atome d'oxygène faisant uniquement partie du radical carboxyle
  • C09D 133/16 - Homopolymères ou copolymères d'esters contenant des atomes d'halogène
  • C09D 133/24 - Homopolymères ou copolymères d'amides ou d'imides

36.

DIAMOND SUBSTRATE AND METHOD FOR MANUFACTURING SAME

      
Numéro d'application 18567210
Statut En instance
Date de dépôt 2022-05-24
Date de la première publication 2024-08-22
Propriétaire
  • SHIN-ETSU CHEMICAL CO., LTD. (Japon)
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
Inventeur(s)
  • Noguchi, Hitoshi
  • Makino, Toshiharu
  • Ogura, Masahiko
  • Kato, Hiromitsu

Abrégé

A method for manufacturing a diamond substrate, the method being a method for producing a (111) oriented diamond crystal on an underlying substrate by epitaxial growth using hydrogen-diluted methane as a main source gas by a microwave plasma CVD method, a direct current plasma CVD method, a hot-filament CVD method, or an arc discharge plasma jet CVD method, in which a growth rate is less than 3.8 μm/h. Thereby, a diamond crystal applicable to an electronic and magnetic device and a method to produce this crystal are stably provided in which the crystal with the NV axis with orientation and high-density NVC obtained by the CVD method under a predetermined condition is grown on a highly oriented (111) diamond base substrate obtained by the CVD method also under a predetermined condition.

Classes IPC  ?

  • C30B 29/04 - Diamant
  • C01B 32/26 - Préparation
  • C30B 25/08 - Enceintes de réaction; Emploi d'un matériau spécifié à cet effet
  • C30B 25/10 - Chauffage de l'enceinte de réaction ou du substrat
  • C30B 25/18 - Croissance d'une couche épitaxiale caractérisée par le substrat

37.

AQUEOUS COMPOSITION AND METHOD FOR PRODUCING SAME

      
Numéro d'application 18568412
Statut En instance
Date de dépôt 2022-05-13
Date de la première publication 2024-08-22
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s) Nyuugaku, Takeshi

Abrégé

This aqueous composition contains: a silanol compound having an imidazolidinone group represented by general formula (1); and a condensate of the silanol compound. The content of an alcohol is less than 5 mass % relative to the content of the silanol compound and the condensate of the silanol compound. The aqueous composition suppresses the generation of alcohols, suppresses excessive condensation of the silanol compound, prevents an increase in molecular weight over time, and yields a colorless transparent aqueous solution. This aqueous composition contains: a silanol compound having an imidazolidinone group represented by general formula (1); and a condensate of the silanol compound. The content of an alcohol is less than 5 mass % relative to the content of the silanol compound and the condensate of the silanol compound. The aqueous composition suppresses the generation of alcohols, suppresses excessive condensation of the silanol compound, prevents an increase in molecular weight over time, and yields a colorless transparent aqueous solution. This aqueous composition contains: a silanol compound having an imidazolidinone group represented by general formula (1); and a condensate of the silanol compound. The content of an alcohol is less than 5 mass % relative to the content of the silanol compound and the condensate of the silanol compound. The aqueous composition suppresses the generation of alcohols, suppresses excessive condensation of the silanol compound, prevents an increase in molecular weight over time, and yields a colorless transparent aqueous solution. (In the formula, R1 denotes a halogen atom or a methyl group, R2 denotes an unsubstituted divalent hydrocarbon group having 1-8 carbon atoms, and n denotes an integer between 0 and 2.)

Classes IPC  ?

  • C07F 7/08 - Composés comportant une ou plusieurs liaisons C—Si

38.

AQUEOUS COMPOSITION COMPRISING HYDROXYPROPYL METHYL CELLULOSE ACETATE SUCCINATE AND METHOD FOR PRODUCING SOLID PREPARATION

      
Numéro d'application 18441344
Statut En instance
Date de dépôt 2024-02-14
Date de la première publication 2024-08-22
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Furuya, Shun
  • Hirama, Yasuyuki

Abrégé

Provided is an aqueous composition that is acid-resistant, does not cause blockage of spray nozzle even without a cooling equipment, and can be suitably used in an enteric coating preparation in a simple and convenient manner. The aqueous composition includes hydroxypropyl methyl cellulose acetate succinate having an acetyl group substitution degree from 0.10 to 2.50 and a succinyl group substitution degree from 0.05 to 2.50 per number of anhydroglucose unit; a neutralizer; and water. The degree of neutralization of the hydroxypropyl methyl cellulose acetate succinate by the neutralizer is from 130 to 260 mol %.

Classes IPC  ?

  • A61K 9/28 - Dragées; Pilules ou comprimés avec revêtements
  • A61K 47/02 - Composés inorganiques
  • A61K 47/18 - Amines; Amides; Urées; Composés d’ammonium quaternaire; Acides aminés; Oligopeptides ayant jusqu’à cinq acides aminés
  • A61K 47/38 - Cellulose; Ses dérivés

39.

METHOD FOR PRODUCING OXADISILACYCLOPENTANE COMPOUND

      
Numéro d'application 18563193
Statut En instance
Date de dépôt 2022-05-02
Date de la première publication 2024-08-22
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Tonomura, Yoichi
  • Kojima, Takahiro
  • Kiyomori, Ayumu

Abrégé

Provided is a method for efficiently producing an oxadisilacyclopentane compound at a high yield, comprising reacting an azadisilacyclopentane compound with water, the azadisilacyclopentane compound having the following general formula (1): Provided is a method for efficiently producing an oxadisilacyclopentane compound at a high yield, comprising reacting an azadisilacyclopentane compound with water, the azadisilacyclopentane compound having the following general formula (1): [R1 to R4 are each independently an unsubstituted monovalent hydrocarbon group having 1 to 4 carbon atoms, and R5 is a hydrogen atom, a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, or a group having the following general formula (2): Provided is a method for efficiently producing an oxadisilacyclopentane compound at a high yield, comprising reacting an azadisilacyclopentane compound with water, the azadisilacyclopentane compound having the following general formula (1): [R1 to R4 are each independently an unsubstituted monovalent hydrocarbon group having 1 to 4 carbon atoms, and R5 is a hydrogen atom, a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, or a group having the following general formula (2): (R1 to R4 are as defined above, m is an integer of 0 to 5, n is an integer of 1 to 5, and a broken line donates a valence bond.) the oxadisilacyclopentane compound having the following general formula (3): Provided is a method for efficiently producing an oxadisilacyclopentane compound at a high yield, comprising reacting an azadisilacyclopentane compound with water, the azadisilacyclopentane compound having the following general formula (1): [R1 to R4 are each independently an unsubstituted monovalent hydrocarbon group having 1 to 4 carbon atoms, and R5 is a hydrogen atom, a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, or a group having the following general formula (2): (R1 to R4 are as defined above, m is an integer of 0 to 5, n is an integer of 1 to 5, and a broken line donates a valence bond.) the oxadisilacyclopentane compound having the following general formula (3): (R1 to R4 are as defined above.).]

Classes IPC  ?

  • C07F 7/08 - Composés comportant une ou plusieurs liaisons C—Si

40.

ADDITION-CURABLE SILICONE RUBBER COMPOSITION AND SILICONE RUBBER CURED MATERIAL

      
Numéro d'application 18569819
Statut En instance
Date de dépôt 2022-06-13
Date de la première publication 2024-08-22
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Hara, Tatsuei
  • Kato, Nobu
  • Ubukata, Shigeru

Abrégé

An addition-curable silicone rubber composition includes: (A) 100 parts by mass of alkenyl-group-containing organopolysiloxane having two or more alkenyl groups bonded to a silicon atom within one molecule; (B) 0.2 to 20 parts by mass of organohydrogenpolysiloxane containing two or more hydrogen atoms bonded to a silicon atom within one molecule; (C) catalytic amount of a platinum-based catalyst; (D) 0.01 to 5.0 parts by mass of thermally-dissociative blocked (poly)isocyanate; and (E) 0.01 to 10.0 parts by mass of a heat resistance-imparting agent. The addition-curable silicone rubber composition and silicone rubber cured material can produce a cured material having a low compressive set even under high temperature conditions of 200° C. or more.

Classes IPC  ?

41.

WATER REPELLENT COMPOSITION AND FIBER TREATMENT AGENT

      
Numéro d'application 18029015
Statut En instance
Date de dépôt 2021-10-08
Date de la première publication 2024-08-22
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s) Hamajima, Yuta

Abrégé

A water repellent composition that contains (A) a trialkylsiloxysilicate represented by average composition formula (1): 100 mass parts, (B) an organopolysiloxane having at least two hydroxyl groups or alkoxy groups in the molecule represented by formula (2): 1-100 mass parts, (C) one or more selected from tetraalkoxytitaniums represented by general formula (3) A water repellent composition that contains (A) a trialkylsiloxysilicate represented by average composition formula (1): 100 mass parts, (B) an organopolysiloxane having at least two hydroxyl groups or alkoxy groups in the molecule represented by formula (2): 1-100 mass parts, (C) one or more selected from tetraalkoxytitaniums represented by general formula (3) A water repellent composition that contains (A) a trialkylsiloxysilicate represented by average composition formula (1): 100 mass parts, (B) an organopolysiloxane having at least two hydroxyl groups or alkoxy groups in the molecule represented by formula (2): 1-100 mass parts, (C) one or more selected from tetraalkoxytitaniums represented by general formula (3) (in the formula, M is titanium or zirconium, X are each independently a C1-8 alkyl group): 10-300 mass parts, and (D) an organic solvent: 100-30,000 mass parts, has an excellent water repellency-imparting effect, and can impart good softness to treated fibers.

Classes IPC  ?

  • C09D 5/16 - Peintures antisalissures; Peintures subaquatiques
  • C09D 183/04 - Polysiloxanes
  • D06M 13/503 - Traitement des fibres, fils, filés, tissus ou articles fibreux faits de ces matières, avec des composés organiques non macromoléculaires; Un tel traitement combiné avec un traitement mécanique avec des composés organiques contenant des atomes de bore, de silicium, de sélénium ou de tellure sans liaison entre un atome de carbone et un métal ou un atome de bore, de silicium, de sélénium ou de tellure
  • D06M 13/513 - Composés avec au moins une liaison carbone-métal ou carbone-bore, carbone-silicium, carbone-sélénium ou carbone-tellure avec au moins une liaison carbone-silicium
  • D06M 15/643 - Composés macromoléculaires obtenus par des réactions autres que celles faisant intervenir uniquement des liaisons non saturées carbone-carbone contenant du silicium dans la chaîne principale
  • D06M 23/10 - Procédés dans lesquels l'agent traitant est dissout ou dispersé dans des solvants organiques; Procédés pour la récupération de ces solvants organiques
  • D06M 101/06 - Fibres végétales cellulosiques
  • D06M 101/32 - Polyesters

42.

WATER-BREAKING MAKEUP COSMETIC

      
Numéro d'application 18290370
Statut En instance
Date de dépôt 2022-04-27
Date de la première publication 2024-08-15
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Konishi, Masayuki
  • Akabane, Emi

Abrégé

This makeup cosmetic comprises: (A) a crosslinking polyether modified silicone in which silicone chains are crosslinked with polyether chains: 0.1-4 mass %; (B) a UV absorbing agent: 3.5-20 mass %; (C) one or more types selected from cyclic or straight-chain dimethyl polysiloxanes having a kinetic viscosity of 4-100 mm2/s at 25° C.: 1.9 mass % or less; (D) an aqueous component: 40-90 mass %; and (E) a powder: 1-25 mass %. This makeup cosmetic comprises: (A) a crosslinking polyether modified silicone in which silicone chains are crosslinked with polyether chains: 0.1-4 mass %; (B) a UV absorbing agent: 3.5-20 mass %; (C) one or more types selected from cyclic or straight-chain dimethyl polysiloxanes having a kinetic viscosity of 4-100 mm2/s at 25° C.: 1.9 mass % or less; (D) an aqueous component: 40-90 mass %; and (E) a powder: 1-25 mass %. The makeup cosmetic exhibits lightweight feel, good feeling in use, and excellent water-breaking sensation and coating properties.

Classes IPC  ?

  • A61K 8/893 - Polysiloxanes saturés, p.ex. diméthicone, phényl triméthicone, C24-C28 méthicone, stéaryl diméthicone modifiés par un groupe alkoxyle ou aryloxyle, p.ex. béhénoxy diméthicone, stéaroxy diméthicone
  • A61K 8/06 - Cosmétiques ou préparations similaires pour la toilette caractérisés par une forme physique particulière Émulsions Émulsions
  • A61K 8/37 - Esters d'acides carboxyliques
  • A61K 8/40 - Cosmétiques ou préparations similaires pour la toilette caractérisés par la composition contenant des composés organiques contenant de l'azote
  • A61K 8/41 - Amines
  • A61Q 17/04 - Préparations topiques pour faire écran au soleil ou aux radiations; Préparations topiques pour bronzer

43.

SPIN WAVE EXCITATION/DETECTION STRUCTURE

      
Numéro d'application 18292195
Statut En instance
Date de dépôt 2022-07-25
Date de la première publication 2024-08-15
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Goto, Taichi
  • Inoue, Mitsuteru
  • Watanabe, Toshiaki

Abrégé

A spin wave excitation/detection structure to excite and detect a spin wave. This structure includes a support substrate, a conductive film provided on the support substrate, an insulating magnetic film provided on the conductive film, and a conductive line provided on the insulating magnetic film. This provides the spin wave excitation/detection structure having a structure with high strength, the spin wave that can be excited with high intensity, and the spin wave that can be excited with broad frequency bandwidth.

Classes IPC  ?

  • G01R 33/12 - Mesure de propriétés magnétiques des articles ou échantillons de solides ou de fluides
  • H10N 50/80 - Dispositifs galvanomagnétiques - Détails de structure

44.

RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Numéro d'application 18539887
Statut En instance
Date de dépôt 2023-12-14
Date de la première publication 2024-08-15
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Ohashi, Masaki
  • Tachibana, Seiichiro
  • Kikuchi, Shun
  • Handa, Ryunosuke

Abrégé

A resist composition is provided that comprises a hypervalent iodine compound having the formula (1), a carboxy group-containing polymer, and a solvent. In formula (1), n is an integer of 0 to 5, R1 and R2 are each independently halogen or a C1-C10 hydrocarbyl group which may contain a heteroatom, R1 and R2 may bond together to form a ring with the carbon atoms to which they are attached and the intervenient atoms. R3 is halogen or a C1-C40 hydrocarbyl group which may contain a heteroatom. A resist composition is provided that comprises a hypervalent iodine compound having the formula (1), a carboxy group-containing polymer, and a solvent. In formula (1), n is an integer of 0 to 5, R1 and R2 are each independently halogen or a C1-C10 hydrocarbyl group which may contain a heteroatom, R1 and R2 may bond together to form a ring with the carbon atoms to which they are attached and the intervenient atoms. R3 is halogen or a C1-C40 hydrocarbyl group which may contain a heteroatom.

Classes IPC  ?

  • G03F 7/029 - Composés inorganiques; Composés d'onium; Composés organiques contenant des hétéro-atomes autres que l'oxygène, l'azote ou le soufre
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs

45.

NEGATIVE ELECTRODE ACTIVE MATERIAL, NEGATIVE ELECTRODE, AND LITHIUM-ION SECONDARY BATTERY

      
Numéro d'application 18566928
Statut En instance
Date de dépôt 2022-05-31
Date de la première publication 2024-08-15
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Tsukigata, Shintarou
  • Yoshioka, Mahiro
  • Otosaka, Tetsuya

Abrégé

A negative electrode active material including silicon monoxide particles coated with a carbon coating and doped with lithium, wherein the silicon monoxide particles satisfy that, in volumetric basis distribution measured with a laser-diffraction method particle size distribution measurement device, an integrated value of a relative amount of particles having a particle size of 1 μm or less is 1% or less, an integrated value of a relative amount of particles having a particle size of 5 μm or less is 20% or less, and an accumulative 50%-particle-size D50 satisfies 6.0 μm≤D50≤15.0 μm. This provides a negative electrode active material that can improve cycle characteristics while keeping high first efficiency when used as the negative electrode active material for a negative electrode of a secondary battery.

Classes IPC  ?

  • H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
  • H01M 4/02 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif
  • H01M 4/48 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques
  • H01M 4/583 - Matériau carboné, p.ex. composés au graphite d'intercalation ou CFx
  • H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium

46.

Bio-Electrode, And Method For Manufacturing The Same

      
Numéro d'application 18420015
Statut En instance
Date de dépôt 2024-01-23
Date de la première publication 2024-08-15
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s) Hatakeyama, Jun

Abrégé

The present invention is a bio-electrode including: a substrate having anti-reflective structure for light on at least one side; and (A) an electro-conductive layer having electro-conductive wiring on the opposite side from the side having the anti-reflective structure of the substrate. This provides: a bio-electrode that allows thin, highly transparent, highly sensitive to biological signals, excellent in biocompatibility, light-weight, manufacturable at low cost, capable of preventing significant reduction in sensitivity to biological signals even when attached on the skin for a long time and when wetted with water or dried, and comfortable without itching, reddening, nor rash of the skin.

Classes IPC  ?

  • G01N 27/327 - Electrodes biochimiques
  • H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs

47.

NEGATIVE ELECTRODE MATERIAL, METHOD OF PRODUCING THE NEGATIVE ELECTRODE MATERIAL, AND MIXED NEGATIVE ELECTRODE MATERIAL

      
Numéro d'application 18634422
Statut En instance
Date de dépôt 2024-04-12
Date de la première publication 2024-08-15
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Matsuno, Takumi
  • Hirose, Takakazu
  • Takahashi, Kohta

Abrégé

A negative electrode material containing a negative electrode active material particle which includes a silicon compound particle containing a silicon compound (SiOx: 0.5≤x≤1.6). The silicon compound particle contains at least one or more of Li2SiO3 and Li4SiO4, and the negative electrode material further contains at least one of a metal compound particle containing a metal compound and an aggregate of the metal compound particle. The negative electrode material is capable of stabilizing a slurry prepared in production of a negative electrode for a secondary battery, and improving initial charge-discharge characteristics and cycle characteristics when it is used as a negative electrode active material for a secondary battery.

Classes IPC  ?

  • H01M 4/134 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de métaux, de Si ou d'alliages
  • H01M 4/02 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif
  • H01M 4/131 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p.ex. LiCoOx
  • H01M 4/133 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de matériau carboné, p.ex. composés d'intercalation du graphite ou CFx
  • H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
  • H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
  • H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium

48.

FLUORINE-INCLUDING ORGANOHYDROSILANE COMPOUND

      
Numéro d'application 18290329
Statut En instance
Date de dépôt 2022-05-06
Date de la première publication 2024-08-08
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Hayashi, Ryuto
  • Fukuda, Kenichi

Abrégé

This novel fluorine-including organohydrosilane compound is represented by formula (1), has two or more hydrosilyl groups, has a feature wherein the inter-Si links all comprise silalkylene structures, has good compatibility with base oils, and provides a fluoropolyether-based cured product having good characteristics. This novel fluorine-including organohydrosilane compound is represented by formula (1), has two or more hydrosilyl groups, has a feature wherein the inter-Si links all comprise silalkylene structures, has good compatibility with base oils, and provides a fluoropolyether-based cured product having good characteristics. This novel fluorine-including organohydrosilane compound is represented by formula (1), has two or more hydrosilyl groups, has a feature wherein the inter-Si links all comprise silalkylene structures, has good compatibility with base oils, and provides a fluoropolyether-based cured product having good characteristics. (Rf is a monovalent perfluoropolyether group; A is a divalent organic group that may include at least one element selected from O, N, and Si; R is a C1-6 monovalent hydrocarbon group; n is an integer from 1 to 3; each B is a monovalent silicon-including organic group that has two or more diorganohydrosilyl groups when n is 1, independently has one or more diorganohydrosilyl groups when n is 2 or 3, and forms a silalkylene structure with the silicon atom linked thereto; and y is 1 or 2.)

Classes IPC  ?

  • C08G 65/00 - Composés macromoléculaires obtenus par des réactions créant une liaison éther dans la chaîne principale de la macromolécule
  • C07F 7/14 - Leur préparation à partir de silanes halogénés et d'hydrocarbures

49.

PROCESS FOR PREPARING CONJUGATED DIENE COMPOUND UTILIZING INTRAMOLECULAR SIGMATROPIC REARRANGEMENT REACTION

      
Numéro d'application 18322680
Statut En instance
Date de dépôt 2023-05-24
Date de la première publication 2024-08-08
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Miyake, Yuki
  • Nagae, Yusuke
  • Watanabe, Takeru

Abrégé

The present invention relates to A process for preparing a conjugated diene compound, the process comprising: subjecting, to an intramolecular sigmatropic rearrangement reaction, a conjugated diene compound (1) of the following general formula (1), wherein Z represents a halogen atom, a methyl group, a hydroxy group, an acetoxy group, a formyl group, or an acetal, and n and m are, independently of each other, integers of 0 to 14, or a conjugated diene compound (2) of the following general formula (2), wherein Z, n, and m are as defined above, to obtain, respectively, a conjugated diene compound (3) of the following general formula (3), wherein Z is as defined above, and n and m are, independently of each other, integers of 0 to 14, with the proviso that m−1 is an integer of zero or more, or a conjugated diene compound (4) of the following general formula (4), wherein Z is as defined above, and n and m are, independently of each other, integers of 0 to 14, with the proviso that n−1 is an integer of zero or more. The present invention relates to A process for preparing a conjugated diene compound, the process comprising: subjecting, to an intramolecular sigmatropic rearrangement reaction, a conjugated diene compound (1) of the following general formula (1), wherein Z represents a halogen atom, a methyl group, a hydroxy group, an acetoxy group, a formyl group, or an acetal, and n and m are, independently of each other, integers of 0 to 14, or a conjugated diene compound (2) of the following general formula (2), wherein Z, n, and m are as defined above, to obtain, respectively, a conjugated diene compound (3) of the following general formula (3), wherein Z is as defined above, and n and m are, independently of each other, integers of 0 to 14, with the proviso that m−1 is an integer of zero or more, or a conjugated diene compound (4) of the following general formula (4), wherein Z is as defined above, and n and m are, independently of each other, integers of 0 to 14, with the proviso that n−1 is an integer of zero or more.

Classes IPC  ?

  • C08F 36/04 - Homopolymères ou copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, l'un au moins contenant plusieurs liaisons doubles carbone-carbone le radical ne contenant que deux doubles liaisons carbone-carbone conjuguées

50.

ORGANOPOLYSILOXANE-MODIFIED CYCLODEXTRIN COMPOUND AND COSMETICS CONTAINING SAME

      
Numéro d'application 18567076
Statut En instance
Date de dépôt 2022-06-03
Date de la première publication 2024-08-08
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s) Kamei, Masanao

Abrégé

This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) [in the formula, R is a hydrogen atom, a group represented by formula (2) This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) [in the formula, R is a hydrogen atom, a group represented by formula (2) This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) [in the formula, R is a hydrogen atom, a group represented by formula (2) (in the formula, R is a group selected from among a C1-C8 alkyl group, a C1-C8 fluorine-substituted alkyl group, and a C6-C12 aryl group, n is an integer of 1-10, and a is an integer of 0-3), or a group represented by formula (3) This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) [in the formula, R is a hydrogen atom, a group represented by formula (2) (in the formula, R is a group selected from among a C1-C8 alkyl group, a C1-C8 fluorine-substituted alkyl group, and a C6-C12 aryl group, n is an integer of 1-10, and a is an integer of 0-3), or a group represented by formula (3) This organopolysiloxane-modified cyclodextrin compound is composed of a sugar unit represented by formula (1) [in the formula, R is a hydrogen atom, a group represented by formula (2) (in the formula, R is a group selected from among a C1-C8 alkyl group, a C1-C8 fluorine-substituted alkyl group, and a C6-C12 aryl group, n is an integer of 1-10, and a is an integer of 0-3), or a group represented by formula (3) (in the formula, X is a divalent organic group, and * is a bond that is bonded to a hydroxyl group of another sugar unit)], wherein the ratio among the number NH of moles of the hydrogen atom, the number NS of moles of the group represented by formula (2), and the number NL of moles of the group represented by formula (3) satisfies NH:NS:NL=0.5-2.5:0.3-2.0:0.1-0.5, and NH+NS+NL is 3.0.

Classes IPC  ?

  • A61K 8/73 - Polysaccharides
  • A61Q 19/00 - Préparations pour les soins de la peau
  • C07H 23/00 - Composés contenant du bore, du silicium ou un métal, p.ex. chélates, vitamine B12

51.

METHOD FOR PACKING QUARTZ GLASS CLOTH

      
Numéro d'application 18573215
Statut En instance
Date de dépôt 2023-11-28
Date de la première publication 2024-08-08
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Shiobara, Toshio
  • Itokawa, Hajime
  • Nomura, Ryunosuke

Abrégé

A method for packing quartz glass cloth includes the step of packing quartz glass cloth that is at least 99.5 wt % comprised of SiO2 with packaging film to form a package, wherein the package has a volumetric absolute humidity therein of 10.0 g/m3 or less.

Classes IPC  ?

  • C03B 37/012 - Fabrication d'ébauches d'étirage de fibres ou de filaments
  • C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p.ex. quartz

52.

RESIN COMPOSITION FOR ENCAPSULATION AND SEMICONDUCTOR DEVICE

      
Numéro d'application 18631187
Statut En instance
Date de dépôt 2024-04-10
Date de la première publication 2024-08-08
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Osada, Shoichi
  • Kawamura, Norifumi
  • Horigome, Hiroki
  • Hagiwara, Kenji
  • Yokota, Ryuhei

Abrégé

Provided are a resin composition for encapsulation that is superior in high-temperature reverse bias test (HTRB test) reliability; and a semiconductor device. The resin composition for encapsulation is used to encapsulate a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond, and a cured product of the resin composition for encapsulation has a dielectric tangent of not larger than 0.50 when measured at 150° C. and 0.1 Hz. The semiconductor device is such that a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond is encapsulated by the cured product of the resin composition for encapsulation.

Classes IPC  ?

  • C08L 63/04 - Epoxynovolaques
  • C08G 59/24 - Composés diépoxydés carbocycliques
  • C08K 3/36 - Silice
  • H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
  • H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
  • H01L 23/29 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par le matériau

53.

SLURRY FOR SUSPENSION PLASMA SPRAYING, METHOD FOR FORMING RARE EARTH ACID FLUORIDE SPRAYED FILM, AND SPRAYING MEMBER

      
Numéro d'application 18634542
Statut En instance
Date de dépôt 2024-04-12
Date de la première publication 2024-08-01
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Takai, Yasushi
  • Hamaya, Noriaki

Abrégé

Provided is a slurry for suspension plasma spraying, which is a spray material used for suspension plasma spraying in an atmosphere including an oxygen-containing gas, contains 5-40 mass % of rare earth fluoride particles having a maximum particle diameter (D100) of 12 μm or less, and contains one or more types of solvent selected from among water and organic solvents. A rare earth acid fluoride-containing sprayed film, in which process shift and particle generation hardly occur, can be stably formed on a base material by carrying out suspension plasma spraying in an atmosphere including an oxygen-containing gas. A spraying member provided with this sprayed film exhibits excellent corrosion resistance to halogen-based gas plasma.

Classes IPC  ?

54.

Composition For Forming Resist Underlayer Film, Patterning Process, And Method For Forming Resist Underlayer Film

      
Numéro d'application 18404770
Statut En instance
Date de dépôt 2024-01-04
Date de la première publication 2024-08-01
Propriétaire Shine-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Kobayashi, Naoki
  • Ishiwata, Kenta
  • Kori, Daisuke

Abrégé

The present invention is a composition for forming a resist underlayer film, containing: (A) a polymer having a structure represented by the following general formula (1A); (B) a crosslinking agent represented by the following general formula (B-1); and (C) an organic solvent, where the polymer (A) contains no hydroxy groups and the crosslinking agent (B) is contained in an amount of 5 to 50 parts by mass relative to 100 parts by mass of the polymer (A). This provides: a composition for forming a resist underlayer film that exhibits much better dry etching resistance than conventional resist underlayer film materials; a patterning process in which the composition is used as a resist underlayer film material; and a method for forming a resist underlayer film. The present invention is a composition for forming a resist underlayer film, containing: (A) a polymer having a structure represented by the following general formula (1A); (B) a crosslinking agent represented by the following general formula (B-1); and (C) an organic solvent, where the polymer (A) contains no hydroxy groups and the crosslinking agent (B) is contained in an amount of 5 to 50 parts by mass relative to 100 parts by mass of the polymer (A). This provides: a composition for forming a resist underlayer film that exhibits much better dry etching resistance than conventional resist underlayer film materials; a patterning process in which the composition is used as a resist underlayer film material; and a method for forming a resist underlayer film.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C09D 145/00 - Compositions de revêtement à base d'homopolymères ou de copolymères de composés ne possédant pas de radicaux aliphatiques non saturés dans une chaîne latérale et contenant une ou plusieurs liaisons doubles carbone-carbone dans un système carbocycliqu; Compositions de revêtement à base de dérivés de tels polymères
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

55.

OIL GELLING AGENT AND COSMETIC

      
Numéro d'application 18564278
Statut En instance
Date de dépôt 2022-05-20
Date de la première publication 2024-08-01
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s) Hata, Ryunosuke

Abrégé

An oil gelling agent that is a copolymer comprising, as constituting units: (a) a hydrophilic (meth)acrylic monomer selected from general formulae (1) and (2) An oil gelling agent that is a copolymer comprising, as constituting units: (a) a hydrophilic (meth)acrylic monomer selected from general formulae (1) and (2) An oil gelling agent that is a copolymer comprising, as constituting units: (a) a hydrophilic (meth)acrylic monomer selected from general formulae (1) and (2) [in formula (1), R1 represents a hydrogen atom or a methyl group, and R2 represents an alkylene group] An oil gelling agent that is a copolymer comprising, as constituting units: (a) a hydrophilic (meth)acrylic monomer selected from general formulae (1) and (2) [in formula (1), R1 represents a hydrogen atom or a methyl group, and R2 represents an alkylene group] An oil gelling agent that is a copolymer comprising, as constituting units: (a) a hydrophilic (meth)acrylic monomer selected from general formulae (1) and (2) [in formula (1), R1 represents a hydrogen atom or a methyl group, and R2 represents an alkylene group] [in formula (2), R1 represents a hydrogen atom or a methyl group, and R3 represents a group selected from among a hydrogen atom, an alkyl group and a hydroxyalkyl group]: (b) a hydrophobic (meth)acrylic monomer represented by general formula (3) An oil gelling agent that is a copolymer comprising, as constituting units: (a) a hydrophilic (meth)acrylic monomer selected from general formulae (1) and (2) [in formula (1), R1 represents a hydrogen atom or a methyl group, and R2 represents an alkylene group] [in formula (2), R1 represents a hydrogen atom or a methyl group, and R3 represents a group selected from among a hydrogen atom, an alkyl group and a hydroxyalkyl group]: (b) a hydrophobic (meth)acrylic monomer represented by general formula (3) An oil gelling agent that is a copolymer comprising, as constituting units: (a) a hydrophilic (meth)acrylic monomer selected from general formulae (1) and (2) [in formula (1), R1 represents a hydrogen atom or a methyl group, and R2 represents an alkylene group] [in formula (2), R1 represents a hydrogen atom or a methyl group, and R3 represents a group selected from among a hydrogen atom, an alkyl group and a hydroxyalkyl group]: (b) a hydrophobic (meth)acrylic monomer represented by general formula (3) [in formula (3), R1 represents a hydrogen atom or a methyl group, and R4 represents a straight-chain alkyl group having 1-24 carbon atoms]; and (c) a crosslinker monomer having two or more radical polymerizable functional groups per molecule. The ratio by mass of (b) to (a) [(b)/(a)] is 0.8-4.0 and the content of monomer (c) in all monomers is 0.05-5 mass %. This oil gelling agent forms a gel having high temperature stability.

Classes IPC  ?

  • A61K 8/81 - Cosmétiques ou préparations similaires pour la toilette caractérisés par la composition contenant des composés organiques macromoléculaires obtenus par des réactions faisant intervenir uniquement des liaisons insaturées carbone-carbone
  • A61K 8/895 - Polysiloxanes contenant du silicium lié à un groupe aliphatique non saturé, p.ex. vinyl diméthicone
  • A61Q 1/06 - Rouges à lèvres
  • A61Q 1/10 - Préparations contenant des colorants cutanés, p.ex. pigments pour les yeux, p.ex. eye-liner, mascara
  • A61Q 19/00 - Préparations pour les soins de la peau

56.

EPITAXIAL WAFER FOR ULTRAVIOLET RAY EMISSION DEVICE AND METHOD FOR MANUFACTURING THE SAME

      
Numéro d'application 18565663
Statut En instance
Date de dépôt 2022-06-27
Date de la première publication 2024-08-01
Propriétaire
  • Shin-Etsu Handotai Co., Ltd. (Japon)
  • SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Tsuchiya, Keitaro
  • Yamada, Masato
  • Nagata, Kazutoshi

Abrégé

An epitaxial wafer for an ultraviolet ray emission device including: a first supporting substrate being transparent for ultraviolet ray and having heat resistance; a seed crystal layer of an AlxGa1-xN (0.5

Classes IPC  ?

  • H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
  • H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
  • H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel

57.

WINDOW MATERIAL FOR OPTICAL ELEMENT, LID FOR OPTICAL ELEMENT PACKAGE, AND OPTICAL ELEMENT PACKAGE

      
Numéro d'application 18407974
Statut En instance
Date de dépôt 2024-01-09
Date de la première publication 2024-07-25
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Matsui, Harunobu
  • Harada, Daijitsu
  • Takeuchi, Masaki

Abrégé

A window material for an optical element, including: a synthetic quartz glass substrate having a flat plate shape and having main surfaces through which light is transmitted, at least one of the main surfaces being a rough surface; and an antireflection film formed on the at least one main surface of the synthetic quartz glass substrate, the main surface being the rough surface. The window material for an optical element of the present invention is easy in shape processing, undergoes little temporal change in a wide wavelength region and is stable over a long period of time, and has high total light transmittance of distributed light.

Classes IPC  ?

  • H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
  • G02B 1/115 - Multicouches
  • H01L 33/44 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les revêtements, p.ex. couche de passivation ou revêtement antireflet
  • H01L 33/48 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs

58.

CURABLE MALEIMIDE RESIN COMPOSITION, ADHESIVE, PRIMER, CHIP COATING AGENT, AND SEMICONDUCTOR DEVICE

      
Numéro d'application 18409377
Statut En instance
Date de dépôt 2024-01-10
Date de la première publication 2024-07-25
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Tsutsumi, Yoshihiro
  • Iwasaki, Masayuki

Abrégé

Provided are a curable maleimide resin composition and others, in which the curable maleimide resin composition is one that does not employ an aprotic polar solvent such as NMP, can be cured at a temperature lower than 250° ° C. which is a temperature at which a normal polyimide cures, and can particularly be turned into a cured product having a superior adhesiveness to copper. The curable maleimide resin composition contains: (A) a maleimide compound that has a bisphenol structure and a number average molecular weight of 5,000 to 50,000; (B) a reaction initiator; and (C) a diaminotriazine ring-containing imidazole.

Classes IPC  ?

  • C08K 5/3492 - Triazines
  • C08G 73/12 - Précurseurs de polyimides non saturés
  • C09D 5/00 - Compositions de revêtement, p.ex. peintures, vernis ou vernis-laques, caractérisées par leur nature physique ou par les effets produits; Apprêts en pâte
  • C09D 179/08 - Polyimides; Polyesterimides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides
  • C09J 179/08 - Polyimides; Polyesterimides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides

59.

SCANNING REDUCED PROJECTION OPTICAL SYSTEM AND LASER PROCESSING APPARATUS USING THE SAME

      
Numéro d'application 18576704
Statut En instance
Date de dépôt 2021-07-20
Date de la première publication 2024-07-25
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Yamaoka, Hiroshi
  • Nakada, Satoki
  • Usami, Taketo

Abrégé

In the present invention, micro devices on a donor substrate are subjected to LIFT onto an opposed receptor substrate with high position accuracy by a scanning reduced projection optical system that forms an image of traverse multimode pulsed laser light with a minute area size onto the donor substrate through a lens array-type zoom homogenizer, an array mask 10, a scanning mirror 4, a photomask 6, and a telecentric projection lens 8. An implementation method thereof includes steps of inspection for acquiring position information, LIFT area division, irradiation position selection, transfer, and stage moving. This configuration can provide a scanning reduced projection optical system capable of scanning a minute irradiation area having a uniform and invariable energy distribution over a wide range with high accuracy and high speed while compensating for scanner accuracy deficiencies, without using expensive fθ lenses or telecentric reduced projection lenses with large apertures, as well as a LIFT apparatus for mounting or retransfer equipped with the scanning reduced projection optical system at low costs, and an implementation method thereof.

Classes IPC  ?

  • B23K 26/082 - Systèmes de balayage, c. à d. des dispositifs comportant un mouvement relatif entre le faisceau laser et la tête du laser
  • B23K 26/06 - Mise en forme du faisceau laser, p.ex. à l’aide de masques ou de foyers multiples
  • B23K 26/0622 - Mise en forme du faisceau laser, p.ex. à l’aide de masques ou de foyers multiples par commande directe du faisceau laser par impulsions de mise en forme
  • B23K 26/57 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler le faisceau laser entrant dans une face de la pièce à travailler d’où il est transmis à travers le matériau de la pièce à travailler pour opérer sur une face différente de la pièce à travailler, p.ex. pour effectuer un enlèvement de matière, pour rac

60.

LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING LAMINATED STRUCTURE

      
Numéro d'application 18287939
Statut En instance
Date de dépôt 2022-03-30
Date de la première publication 2024-07-25
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Watabe, Takenori
  • Hashigami, Hiroshi
  • Sakatsume, Takahiro

Abrégé

A laminated structure including, a ground substrate with a crystalline oxide film containing gallium oxide as a main component and a root-mean-square of a roughness on a surface of the crystalline oxide film is 0.2 μm or less. A diameter of the ground substrate is 50 mm or more and TTV of the ground substrate is 30 μm or less.

Classes IPC  ?

  • H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
  • C30B 25/16 - Commande ou régulation
  • C30B 25/18 - Croissance d'une couche épitaxiale caractérisée par le substrat
  • C30B 29/16 - Oxydes
  • H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives

61.

Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process

      
Numéro d'application 18402451
Statut En instance
Date de dépôt 2024-01-02
Date de la première publication 2024-07-25
Propriétaire SHIN ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Kobayashi, Naoki
  • Nagamachi, Nobuhiro
  • Kori, Daisuke

Abrégé

The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is a metal compound including at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, and the ligand includes a crosslinking group represented by one of the following general formulae (W-1). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used. The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is a metal compound including at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, and the ligand includes a crosslinking group represented by one of the following general formulae (W-1). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C09D 143/04 - Homopolymères ou copolymères de monomères contenant du silicium
  • G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

62.

Conductive Material Composition, Conductive Film, And Method For Forming Conductive Film

      
Numéro d'application 18404813
Statut En instance
Date de dépôt 2024-01-04
Date de la première publication 2024-07-25
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Hatakeyama, Jun
  • Nonaka, Shiori
  • Kori, Daisuke

Abrégé

The present invention is a conductive material composition containing: (A) metal nanowires; (B) a resin whose main chain is to be decomposed by an acid, heat, or both; and (C) a solvent. This can provide a conductive material composition for forming a conductive film having high-conductivity and high-transparency.

Classes IPC  ?

  • C09D 5/24 - Peintures électriquement conductrices
  • B22F 1/054 - Particules de taille nanométrique
  • B22F 1/10 - Poudres métalliques contenant des agents lubrifiants ou liants; Poudres métalliques contenant des matières organiques
  • C09D 7/40 - Adjuvants
  • C09D 7/61 - Adjuvants non macromoléculaires inorganiques
  • C09D 159/00 - Compositions de revêtement à base de polyacétals; Compositions de revêtement à base de dérivés de polyacétals 
  • C23C 24/10 - Revêtement à partir de poudres inorganiques en utilisant la chaleur ou une pression et la chaleur avec formation d'une phase liquide intermédiaire dans la couche

63.

Substrate with Film for Reflective Mask Blank, and Reflective Mask Blank

      
Numéro d'application 18505485
Statut En instance
Date de dépôt 2023-11-09
Date de la première publication 2024-07-25
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Terasawa, Tsuneo
  • Kaneko, Hideo
  • Inazuki, Yukio
  • Kosaka, Takuro

Abrégé

A substrate with a film for a reflective mask blank and a reflective mask blank, including a substrate, a multilayer reflection film of Mo layers and Si layers, and a Ru protection film is provided. The substrate and blank include a mixing layer containing Mo and Si existing between the Mo layer and Si layer, another mixing layer containing Ru and Si generating between the uppermost Si layer and the Ru protection film, the film and layers have thicknesses satisfying defined expressions.

Classes IPC  ?

  • G03F 1/24 - Masques en réflexion; Leur préparation
  • G03F 1/54 - Absorbeurs, p.ex. en matériau opaque
  • H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques

64.

THIOEPOXY GROUP- AND (METH)ALLYL GROUP-CONTAINING COMPOUND, AND METHOD FOR PRODUCING SAME

      
Numéro d'application 18558595
Statut En instance
Date de dépôt 2022-03-31
Date de la première publication 2024-07-25
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s) Yanagisawa, Hideyoshi

Abrégé

Provided is a thioepoxy group- and (meth)allyl group-containing compound represented by formula (1). Provided is a thioepoxy group- and (meth)allyl group-containing compound represented by formula (1). Provided is a thioepoxy group- and (meth)allyl group-containing compound represented by formula (1). (In the formula, R1 is a C2-20 trivalent or tetravalent hydrocarbon group. R2 is a hydrogen atom or a methyl group. n is 3 or 4.)

Classes IPC  ?

65.

Q-SWITCH STRUCTURE AND METHOD OF PRODUCING Q-SWITCH STRUCTURE

      
Numéro d'application 18563971
Statut En instance
Date de dépôt 2022-05-26
Date de la première publication 2024-07-25
Propriétaire
  • SHIN-ETSU CHEMICAL CO., LTD. (Japon)
  • NATIONAL UNIVERSITY CORPORATION TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japon)
Inventeur(s)
  • Watanabe, Toshiaki
  • Goto, Taichi
  • Inoue, Mitsuteru

Abrégé

A Q-switch structure including, a solid-state laser medium, and a magneto-optical material, wherein the solid-state laser medium and the magneto-optical material are joined and integrated. In addition, the solid-state laser medium has a thickness of 1 mm or more, and the solid-state medium and the magneto-optical material are directly joined. Consequently, the Q-switch is applicable to high optical output and contributes to the miniaturization of a laser apparatus.

Classes IPC  ?

  • H01S 3/1123 - Commutation-Q
  • G02F 1/09 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des éléments magnéto-optiques, p.ex. produisant un effet Faraday
  • H01S 3/06 - Structure ou forme du milieu actif
  • H01S 3/16 - Matériaux solides

66.

LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF FORMING CRYSTALLINE OXIDE FILM

      
Numéro d'application 18693977
Statut En instance
Date de dépôt 2022-08-30
Date de la première publication 2024-07-25
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Watabe, Takenori
  • Hashigami, Hiroshi
  • Sakatsume, Takahiro

Abrégé

A laminated structure having at least a base substrate and a crystalline oxide film containing gallium oxide as a main component, wherein an average value of reflectance of light having a wavelength of 400 to 800 nm is 16% or greater on a surface on a side of the crystalline oxide film of the laminated structure. Thus, the invention provides a laminated structure having a crystalline oxide film containing gallium oxide as a main component with extremely few crystal defects, excellent crystallinity, and excellent semiconductor properties when applied to a semiconductor device.

Classes IPC  ?

  • H01L 29/786 - Transistors à couche mince
  • C23C 16/40 - Oxydes
  • C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p.ex. par évaporation ou par sublimation de matériaux précurseurs
  • H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives

67.

OILY COSMETIC

      
Numéro d'application 18289468
Statut En instance
Date de dépôt 2022-04-14
Date de la première publication 2024-07-18
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Moriya, Hiroyuki
  • Tanaka, Mituru

Abrégé

Developed is an oily cosmetic imparting an adhesiveness, softness, smoothness, luster, and emollient effect, bringing about a natural makeup finish, and ensuring an excellent makeup durability without showing color transfer and color fade, while having a light spreadability, non-sticky feeling of use, and superior water repellency. The oily cosmetic contains components (A) and (B) which are: (A) an organopolysiloxane compound that has a weight-average molecular weight of 500 to 200,000; and (B) a hydrocarbon-based oily solidifying agent and/or a non-hydrocarbon-based oily gelling agent.

Classes IPC  ?

  • A61K 8/898 - Polysiloxanes contenant des atomes autres que du silicium, du carbone, de l'oxygène et de l'hydrogène, p.ex. diméthicone copolyol phosphate contenant de l'azote, p.ex. amodiméthicone, triméthyl silyl amodiméthicone, diméthicone propyl PG-bétaïne
  • A61K 8/31 - Hydrocarbures
  • A61K 8/34 - Alcools
  • A61K 8/37 - Esters d'acides carboxyliques
  • A61K 8/60 - Sucres; Leurs dérivés
  • A61K 8/92 - Huiles, graisses ou cires; Leurs dérivés, p.ex. produits d'hydrogénation
  • A61Q 1/06 - Rouges à lèvres

68.

Positive Resist Material And Patterning Process

      
Numéro d'application 18544132
Statut En instance
Date de dépôt 2023-12-18
Date de la première publication 2024-07-18
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s) Hatakeyama, Jun

Abrégé

The present invention is a positive resist material containing a compound having two or more urethane groups and having a carboxyl group and a sulfonium salt or iodonium salt of a carboxylic acid, the carboxyl group being substituted with an acid-labile group and being bonded to a first urethane group via a first linking group, and the sulfonium salt or iodonium salt being bonded to a second urethane group directly or via a second linking group. This provides a positive resist material that has higher sensitivity than conventional positive resist materials, achieves excellent resolution, and small edge roughness and CDU, and allows excellent pattern profile after exposure to light.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/004 - Matériaux photosensibles

69.

Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process

      
Numéro d'application 18545815
Statut En instance
Date de dépôt 2023-12-19
Date de la première publication 2024-07-18
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Kobayashi, Naoki
  • Nagamachi, Nobuhiro
  • Kori, Daisuke

Abrégé

The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is a metal compound including at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, and the ligand includes an organic group RA represented by one of the following general formulae (1). This provides: a metal compound having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist material. The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is a metal compound including at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, and the ligand includes an organic group RA represented by one of the following general formulae (1). This provides: a metal compound having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist material.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C09D 185/00 - Compositions de revêtement à base de composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant des atomes autres que le silicium, le soufre, l'azote, l'oxygène et le carbone; Compositions de revêtement à base de dérivés de tels polymères
  • G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires
  • H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou

70.

INFRARED-TRANSMISSIVE CURABLE COMPOSITION, CURED PRODUCT THEREFROM, AND OPTICAL SEMICONDUCTOR DEVICE

      
Numéro d'application 17773128
Statut En instance
Date de dépôt 2020-09-24
Date de la première publication 2024-07-18
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s) Asakura, Eri

Abrégé

A composition comprising components (A) to (E) below, due to an excellent compatibility with dyes, can inhibit timewise dye aggregation, and has a high infrared transmissivity and a high visible light-blocking performance. (A) An addition reaction product between a compound (a) with formula (1) and a polycyclic hydrocarbon (b) having two carbon-carbon double bonds in each molecule, the addition reaction product having two carbon-carbon double bonds in each molecule A composition comprising components (A) to (E) below, due to an excellent compatibility with dyes, can inhibit timewise dye aggregation, and has a high infrared transmissivity and a high visible light-blocking performance. (A) An addition reaction product between a compound (a) with formula (1) and a polycyclic hydrocarbon (b) having two carbon-carbon double bonds in each molecule, the addition reaction product having two carbon-carbon double bonds in each molecule A composition comprising components (A) to (E) below, due to an excellent compatibility with dyes, can inhibit timewise dye aggregation, and has a high infrared transmissivity and a high visible light-blocking performance. (A) An addition reaction product between a compound (a) with formula (1) and a polycyclic hydrocarbon (b) having two carbon-carbon double bonds in each molecule, the addition reaction product having two carbon-carbon double bonds in each molecule (R1 represents, e.g., a monovalent hydrocarbon group, and R2 represents a divalent hydrocarbon group) (B) A dye that has an absorption band in the wavelength region of 350-650 nm and that transmits at least a portion of light having a wavelength of 800-900 nm (C) An organosilicon compound having in each molecule at least two silicon atom-bonded hydrogen atoms, and lacking a carboxylic acid anhydride group, alkoxysilyl group, epoxy group, or a group containing an addition-reactive carbon-carbon double bond (D) A hydrosilylation reaction catalyst (E) Hydrophobic fumed silica.

Classes IPC  ?

  • C08L 83/16 - Compositions contenant des composés macromoléculaires obtenus par des réactions créant dans la chaîne principale de la macromolécule une liaison contenant uniquement du silicium, avec ou sans soufre, azote, oxygène ou carbone; Compositions contenant des dérivés de tels polymères dans lesquels tous les atomes de silicium sont liés autrement que par des atomes d'oxygène
  • C08K 3/36 - Silice
  • H01L 33/44 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les revêtements, p.ex. couche de passivation ou revêtement antireflet
  • H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone

71.

SEMICONDUCTOR ELEMENT ENCAPSULATION RESIN COMPOSITION AND SEMICONDUCTOR DEVICE HAVING CURED PRODUCT THEREOF

      
Numéro d'application 18408733
Statut En instance
Date de dépôt 2024-01-10
Date de la première publication 2024-07-18
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s) Horigome, Hiroki

Abrégé

Provided is an encapsulation resin composition that is suitable for encapsulating a semiconductor element-mounted surface of a substrate with a semiconductor element(s) mounted thereon or a semiconductor element-forming surface of a wafer with a semiconductor element(s) formed thereon, is superior in low warpage property, and has a high relative permittivity and a low dielectric tangent. The encapsulation resin composition of the present invention contains: (A) a maleimide compound having at least one dimer acid frame-derived hydrocarbon group per molecule; (B) a reaction initiator; (C) a high-relative permittivity inorganic filler having a relative permittivity of not lower than 10 at 1 MHz, the inorganic filler (C) being an inorganic filler other than the following component (D); and (D) silica particles and/or alumina particles.

Classes IPC  ?

  • C08K 3/22 - Oxydes; Hydroxydes de métaux
  • C08G 73/10 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides
  • C08K 3/36 - Silice
  • H01L 23/29 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par le matériau

72.

Polymer For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process

      
Numéro d'application 18544335
Statut En instance
Date de dépôt 2023-12-18
Date de la première publication 2024-07-18
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Kobayashi, Naoki
  • Iwamori, Shohei
  • Kori, Daisuke

Abrégé

The present invention is a polymer for forming a metal-containing film including a repeating unit represented by the following general formula (1A), where W1 represents a divalent organic group having 1 to 31 carbon atoms; and each Q represents a group selected from the group consisting of an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aliphatic unsaturated organic group having 2 to 20 carbon atoms and having one or more double bonds or triple bonds, an aryl group having 6 to 30 carbon atoms, and an aralkyl group having 7 to 31 carbon atoms. This provides: a polymer for forming a metal-containing film having excellent dry etching resistance and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the polymer; and a patterning process in which the composition is used. The present invention is a polymer for forming a metal-containing film including a repeating unit represented by the following general formula (1A), where W1 represents a divalent organic group having 1 to 31 carbon atoms; and each Q represents a group selected from the group consisting of an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aliphatic unsaturated organic group having 2 to 20 carbon atoms and having one or more double bonds or triple bonds, an aryl group having 6 to 30 carbon atoms, and an aralkyl group having 7 to 31 carbon atoms. This provides: a polymer for forming a metal-containing film having excellent dry etching resistance and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the polymer; and a patterning process in which the composition is used.

Classes IPC  ?

  • H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
  • H01L 21/308 - Traitement chimique ou électrique, p.ex. gravure électrolytique en utilisant des masques
  • H01L 21/311 - Gravure des couches isolantes

73.

PELLICLE FRAME AND PELLICLE

      
Numéro d'application 18620093
Statut En instance
Date de dépôt 2024-03-28
Date de la première publication 2024-07-18
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s) Yanase, Yu

Abrégé

The present invention is to provide a pellicle frame in a frame shape, having an upper end face to arrange a pellicle film thereon and a lower end face to face a photomask, and which is characterized by being provided with a notched part from an outer side face toward an inner side face of the upper end face, and to provide a pellicle characterized by including the pellicle frame as a component.

Classes IPC  ?

  • G03F 1/64 - Pellicules, p.ex. assemblage de pellicules ayant une membrane sur un cadre de support; Leur préparation caractérisés par les cadres, p.ex. du point de vue de leur structure ou de leur matériau

74.

EMULSIFIED COMPOSITION AND COSMETIC MATERIAL

      
Numéro d'application 18275651
Statut En instance
Date de dépôt 2021-12-07
Date de la première publication 2024-07-11
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Iyoku, Hiroomi
  • Irifune, Shinji
  • Ando, Yuji

Abrégé

The present invention is an emulsified composition, including: (A): a titanium-atom-containing silicone resin; (B): one or more oil agents selected from the group consisting of a hydrocarbon oil, an ester oil, and a silicone oil, the oil agent being able to dissolve the component (A) and being liquid at 25° C.; and (C): water, where the emulsified composition contains no surfactant. Accordingly, an object of the present invention is to provide: an emulsified composition having excellent stability and usability without a surfactant; and a cosmetic material including the above emulsified composition and having excellent feeling of use.

Classes IPC  ?

  • A61K 8/896 - Polysiloxanes contenant des atomes autres que du silicium, du carbone, de l'oxygène et de l'hydrogène, p.ex. diméthicone copolyol phosphate
  • A61K 8/06 - Cosmétiques ou préparations similaires pour la toilette caractérisés par une forme physique particulière Émulsions Émulsions
  • A61K 8/92 - Huiles, graisses ou cires; Leurs dérivés, p.ex. produits d'hydrogénation
  • A61Q 17/04 - Préparations topiques pour faire écran au soleil ou aux radiations; Préparations topiques pour bronzer

75.

OXIDE SEMICONDUCTOR FILM AND FILM-FORMING METHOD THE SAME, SEMICONDUCTOR APPARATUS

      
Numéro d'application 18278861
Statut En instance
Date de dépôt 2022-03-09
Date de la première publication 2024-07-11
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s) Sakatsume, Takahiro

Abrégé

A film-forming method for heat-treating a raw material solution atomized into a mist and performing a film-formation, and the method includes the following steps: atomizing the raw material solution or making the raw material solution into droplets to generate a mist; conveying the mist to a film-forming part by a carrier gas; and supplying the mist from a nozzle to a substrate, heat-treating the mist on the substrate, and performing the film-formation in the film-forming part, wherein with the area of an opening surface of the nozzle being S [cm2], the longest distance among distances between points in the opening surface and the surface of the substrate being H [cm], and the flow rate of the carrier gas supplied from the nozzle being Q [L/min], SH/Q≥0.015 results.

Classes IPC  ?

  • H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
  • C23C 16/40 - Oxydes
  • C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p.ex. par évaporation ou par sublimation de matériaux précurseurs
  • C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
  • C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
  • H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
  • H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , ,  ou

76.

FILM-FORMING APPARATUS, FILM-FORMING METHOD, GALLIUM OXIDE FILM AND LAMINATE

      
Numéro d'application 18279082
Statut En instance
Date de dépôt 2022-03-10
Date de la première publication 2024-07-11
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Sakatsume, Takahiro
  • Hashigami, Hiroshi

Abrégé

A film formation device which forms a film on a substrate through the heat treatment of a starting material solution in the form of a mist, the film formation device including a mist conversion unit that generates a mist by converting the starting material solution into mist, a carrier gas supply unit that supplies a carrier gas for transporting the mist generated by the mist conversion unit, a film formation unit that includes therein a placement part for placing the substrate and that is where the mist transported by the carrier gas is supplied onto the substrate, and an exhaust unit that exhausts exhaust gas from the film formation unit, and further including, above the placement part in the film formation unit, a nozzle for supplying the mist onto the substrate and a top plate for adjusting the flow of the mist supplied from the nozzle.

Classes IPC  ?

  • C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
  • C23C 16/08 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le dépôt d'un matériau métallique à partir d'halogénures métalliques
  • C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction

77.

ULTRAVIOLET CURABLE SILICONE COMPOSITION AND CURED PRODUCT THEREOF

      
Numéro d'application 18399857
Statut En instance
Date de dépôt 2023-12-29
Date de la première publication 2024-07-11
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Matsumoto, Nobuaki
  • Otake, Kohei
  • Kitagawa, Taichi
  • Matsuda, Tsuyoshi
  • Ozai, Toshiyuki

Abrégé

Provided are a low-viscosity ultraviolet curable silicone composition capable of being used even in a surface exposure method and a lift-up method etc.; and a cured product superior in tensile strength and elongation at break. The ultraviolet curable silicone composition contains: (A) an organopolysiloxane; (B) a photopolymerization initiator; and (C) a monofunctional (meth)acrylate compound having no siloxane structure and/or (D) a multifunctional (meth)acrylate compound having no siloxane structure, wherein the organopolysiloxane is represented by the following general formula (1): Provided are a low-viscosity ultraviolet curable silicone composition capable of being used even in a surface exposure method and a lift-up method etc.; and a cured product superior in tensile strength and elongation at break. The ultraviolet curable silicone composition contains: (A) an organopolysiloxane; (B) a photopolymerization initiator; and (C) a monofunctional (meth)acrylate compound having no siloxane structure and/or (D) a multifunctional (meth)acrylate compound having no siloxane structure, wherein the organopolysiloxane is represented by the following general formula (1): wherein n satisfies 1≤n≤1,000, m satisfies 1≤m≤1,000, Ar is an aromatic group, R1 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms, A is a group represented by the following formula (2): Provided are a low-viscosity ultraviolet curable silicone composition capable of being used even in a surface exposure method and a lift-up method etc.; and a cured product superior in tensile strength and elongation at break. The ultraviolet curable silicone composition contains: (A) an organopolysiloxane; (B) a photopolymerization initiator; and (C) a monofunctional (meth)acrylate compound having no siloxane structure and/or (D) a multifunctional (meth)acrylate compound having no siloxane structure, wherein the organopolysiloxane is represented by the following general formula (1): wherein n satisfies 1≤n≤1,000, m satisfies 1≤m≤1,000, Ar is an aromatic group, R1 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms, A is a group represented by the following formula (2): wherein p satisfies 0≤p≤10, a satisfies 1≤a≤3, R1 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms, R2 represents an oxygen atom or an alkylene group, R3 represents an acryloyloxyalkyl group or the like.

Classes IPC  ?

  • C08F 283/12 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères prévus par la sous-classe sur des polysiloxanes

78.

MILLABLE FLUOROSILICONE RUBBER COMPOSITION HAVING HEAT RESISTANCE

      
Numéro d'application 18546627
Statut En instance
Date de dépôt 2022-02-17
Date de la première publication 2024-07-11
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s) Hayashida, Osamu

Abrégé

[Problem] [Problem] An object of the present invention is to provide a millable fluorosilicone rubber composition that provides a fluorosilicone rubber (cured product) having excellent heat resistance at 200° C. or higher, and at 250° C. or higher in particular. [Problem] An object of the present invention is to provide a millable fluorosilicone rubber composition that provides a fluorosilicone rubber (cured product) having excellent heat resistance at 200° C. or higher, and at 250° C. or higher in particular. [Solution] [Problem] An object of the present invention is to provide a millable fluorosilicone rubber composition that provides a fluorosilicone rubber (cured product) having excellent heat resistance at 200° C. or higher, and at 250° C. or higher in particular. [Solution] The present invention provides a millable fluorosilicone rubber composition comprising: (A) 100 parts by mass of an organopolysiloxane having at least two alkenyl groups each bonded a silicon atom in one molecule, having a number of siloxane units having at least one fluoroalkyl group that is 40% or more of a total number of the siloxane units, and having an average polymerization degree of 100 or more; (B) 5 to 100 parts by mass of a reinforcing silica having a specific surface area of 50 m2/g or more; (C) 0.01 to 10 parts by mass of titanium oxide denatured with the transition metal oxide, that contains 0.01 to 5% by mass of a transition metal oxide; (D) 0.01 to 10 parts by mass of calcium carbonate; and (E) 0.1 to 50 parts by mass of a curing agent.

Classes IPC  ?

  • C08G 77/24 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant des halogènes
  • C08G 77/08 - Procédés de préparation caractérisés par les catalyseurs utilisés
  • C08G 77/12 - Polysiloxanes contenant du silicium lié à l'hydrogène
  • C08G 77/20 - Polysiloxanes contenant du silicium lié à des groupes aliphatiques non saturés
  • C08K 3/22 - Oxydes; Hydroxydes de métaux
  • C08K 3/26 - Carbonates; Bicarbonates
  • C08K 3/36 - Silice
  • C08K 5/14 - Peroxydes
  • C08K 9/02 - Ingrédients traités par des substances inorganiques

79.

FILM FORMING APPARATUS AND METHOD OF FORMING CRYSTALLINE SEMICONDUCTOR FILM USING THE SAME

      
Numéro d'application 18693599
Statut En instance
Date de dépôt 2022-06-29
Date de la première publication 2024-07-11
Propriétaire
  • SHIN-ETSU CHEMICAL CO., LTD. (Japon)
  • SHIN-ETSU ENGINEERING CO., LTD. (Japon)
Inventeur(s)
  • Hashigami, Hiroshi
  • Kojima, Muneyuki

Abrégé

A film forming apparatus including an atomizer configured to atomize a raw material solution to generate a raw material mist, a carrier gas supplier configured to supply a carrier gas that carries the raw material mist, a mist supplier configured to supply a mixture gas in which the raw material mist and the carrier gas are mixed to a surface of a substrate, a stage configured to hold the substrate, a heater configured to heat the substrate, and an exhaust unit directly or indirectly connected to the stage through piping. Thus, a film forming apparatus that can form a crystalline semiconductor film with favorable crystal orientation stably and with high productivity, and a method of forming a crystalline semiconductor film are provided.

Classes IPC  ?

  • H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
  • C23C 16/40 - Oxydes
  • C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement
  • C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p.ex. par évaporation ou par sublimation de matériaux précurseurs
  • C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
  • C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
  • C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat

80.

Bio-Electrode, Bio-Electrode Composition, And Method For Manufacturing Bio-Electrode

      
Numéro d'application 18507898
Statut En instance
Date de dépôt 2023-11-13
Date de la première publication 2024-07-04
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Hatakeyama, Jun
  • Nagasawa, Takayuki
  • Ikeda, Joe

Abrégé

A bio-electrode including an electro-conductive base material and a living body contact layer formed on the electro-conductive base material, where the living body contact layer includes an electro-conductive polymer composite including a component A: a π-conjugated polymer and a component B: a dopant polymer, and the component B dopant polymer contains a repeating unit having any of fluorosulfonic acid, fluorosulfonimide, and N-carbonyl-fluorosulfonamide and has a weight-average molecular weight of 1,000 to 500,000. This provides: a bio-electrode that is a thin film of high transparency, has high sensitivity to biological signals, has excellent biocompatibility, is light-weight, can be manufactured at low cost, can control significant reduction in sensitivity to biological signals either when soaked in water, dried, or attached to the skin for a long time, causes no itchiness, red spots, rashes, etc. of the skin, and is comfortable; a bio-electrode composition; and a method for manufacturing a bio-electrode.

Classes IPC  ?

  • A61B 5/268 - Détection, mesure ou enregistrement de signaux bioélectriques ou biomagnétiques du corps ou de parties de celui-ci Électrodes bioélectriques à cet effet caractérisées par les matériaux des électrodes contenant des polymères conducteurs, p.ex. des polymères PEDOT:PSS
  • B82Y 5/00 - Nanobiotechnologie ou nanomédecine, p.ex. génie protéique ou administration de médicaments
  • C08F 212/14 - Monomères contenant un seul radical aliphatique non saturé contenant un cycle substitué par des hétéro-atomes ou des groupes contenant des hétéro-atomes

81.

POROUS GLASS BASE MATERIAL MANUFACTURING SYSTEM AND METHOD FOR MANUFACTURING GLASS BASE MATERIAL

      
Numéro d'application 18530807
Statut En instance
Date de dépôt 2023-12-06
Date de la première publication 2024-07-04
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Noda, Naoto
  • Iinuma, Hitoshi

Abrégé

A porous glass base material manufacturing system that does not require the manufacturing apparatus and building to be hazardous material-compatible and that can provide a stable supply of raw materials, even when organic siloxane raw material is used as raw materials to produce silica fine particles includes a raw material supplying apparatus and a porous glass base material manufacturing apparatus. The raw material supplying apparatus includes: a raw material tank in which organic siloxane raw material in a liquid state is stored and the remaining space is filled with inert gas; a liquid feed pump to pump the organic siloxane raw material from the raw material tank; a circulating piping and a branch piping through which the raw material pumped is passed; a liquid mass flow controller that controls the flow rate of organic siloxane raw material passed through the branch piping to a predetermined flow rate; and a vaporizer.

Classes IPC  ?

  • C03B 19/14 - Autres méthodes de façonnage du verre par des procédés à réaction en phase gazeuse
  • C03C 3/06 - Compositions pour la fabrication du verre contenant de la silice avec plus de 90% en poids de silice, p.ex. quartz
  • C03C 11/00 - Verre alvéolé

82.

Conductive Polymer Composition, Coated Product, And Patterning Process

      
Numéro d'application 18531373
Statut En instance
Date de dépôt 2023-12-06
Date de la première publication 2024-07-04
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Nagasawa, Takayuki
  • Watanabe, Satoshi
  • Matsuzawa, Yuta
  • Kotake, Masaaki
  • Masunaga, Keiichi

Abrégé

The present invention is a conductive polymer composition containing: (A) a polyaniline-based conductive polymer having at least one repeating unit of the formula (1); and (B) a hydrogencarbonate including a cation of the formula (2-1) or (2-2). Here, R1 to R4 each represent a hydrogen atom, an acidic group, a hydroxy group, a nitro group, a halogen atom, a linear or branched alkyl group, a hydrocarbon group containing a hetero atom, or a hydrocarbon group partially substituted with a halogen atom. X represents a monovalent alkali metal selected from lithium, sodium, potassium, and cesium, R101 to R104 each represent a hydrogen atom, an alkyl group, an alkenyl group, an oxoalkyl group, an oxoalkenyl group, an aryl group, an aralkyl group, or an aryloxoalkyl group. R101 and R102, R103 and R104, and R101, R102, and R104 optionally form a ring. This provides a conductive polymer composition that can form an antistatic film for electron beam resist writing. The present invention is a conductive polymer composition containing: (A) a polyaniline-based conductive polymer having at least one repeating unit of the formula (1); and (B) a hydrogencarbonate including a cation of the formula (2-1) or (2-2). Here, R1 to R4 each represent a hydrogen atom, an acidic group, a hydroxy group, a nitro group, a halogen atom, a linear or branched alkyl group, a hydrocarbon group containing a hetero atom, or a hydrocarbon group partially substituted with a halogen atom. X represents a monovalent alkali metal selected from lithium, sodium, potassium, and cesium, R101 to R104 each represent a hydrogen atom, an alkyl group, an alkenyl group, an oxoalkyl group, an oxoalkenyl group, an aryl group, an aralkyl group, or an aryloxoalkyl group. R101 and R102, R103 and R104, and R101, R102, and R104 optionally form a ring. This provides a conductive polymer composition that can form an antistatic film for electron beam resist writing.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • G03F 7/038 - Composés macromoléculaires rendus insolubles ou sélectivement mouillables
  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/20 - Exposition; Appareillages à cet effet
  • G03F 7/32 - Compositions liquides à cet effet, p.ex. développateurs

83.

Bio-Electrode Composition, Bio-Electrode, And Method For Manufacturing Bio-Electrode

      
Numéro d'application 18524312
Statut En instance
Date de dépôt 2023-11-30
Date de la première publication 2024-07-04
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Hatakeyama, Jun
  • Nagasawa, Takayuki
  • Ikeda, Joe

Abrégé

The present invention is a bio-electrode composition containing: an electro-conductive polymer composite including (A) a π-conjugated polymer and (B) a dopant polymer containing a repeating unit-a1 having a hydroxy group and/or a carboxy group and a repeating unit-a2 having a sulfonic acid, fluorosulfonimide, and N-carbonyl-fluorosulfonamide, the dopant polymer having a weight-average molecular weight of 1,000 to 500,000; and (C) a crosslinking agent. This provides: a bio-electrode composition that allows a thin film of high transparency, has high sensitivity to biological signals, has excellent biocompatibility, is light-weight, can be manufactured at low cost, can control significant reduction in sensitivity to biological signals when soaked in water for a long time or when attached to the skin for a long time, causes no itchiness, red spots, rashes, etc. of the skin, and is comfortable; a bio-electrode; and a method for manufacturing a bio-electrode.

Classes IPC  ?

  • A61B 5/268 - Détection, mesure ou enregistrement de signaux bioélectriques ou biomagnétiques du corps ou de parties de celui-ci Électrodes bioélectriques à cet effet caractérisées par les matériaux des électrodes contenant des polymères conducteurs, p.ex. des polymères PEDOT:PSS

84.

THERMALLY CONDUCTIVE SILICONE COMPOSITION

      
Numéro d'application 18563419
Statut En instance
Date de dépôt 2022-03-31
Date de la première publication 2024-07-04
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Ito, Takanori
  • Miyano, Megumi
  • Tsukada, Junichi
  • Ishihara, Yasuhisa
  • Endo, Akihiro
  • Hironaka, Yuya

Abrégé

[Problem] [Problem] One object of the present invention is to provide a thermally conductive silicone composition in which an increase in viscosity is suppressed when a thermally conductive filler is filled with a high amount level, and a thermally conductive silicone cured product having good thermal conductivity and excellent handling properties. [Problem] One object of the present invention is to provide a thermally conductive silicone composition in which an increase in viscosity is suppressed when a thermally conductive filler is filled with a high amount level, and a thermally conductive silicone cured product having good thermal conductivity and excellent handling properties. [Solution] [Problem] One object of the present invention is to provide a thermally conductive silicone composition in which an increase in viscosity is suppressed when a thermally conductive filler is filled with a high amount level, and a thermally conductive silicone cured product having good thermal conductivity and excellent handling properties. [Solution] A thermally conductive silicone composition comprising the following components (A) to (F): (A) an organopolysiloxane having at least two alkenyl groups each bonded to a silicon atom: 100 parts by mass; (B) an organohydrogenpolysiloxane having at least two hydrogen atoms each bonded to a silicon atom in an amount such that a ratio of the number of the hydrogen atom bonded to a silicon atom to the number of the alkenyl group in component (A) is 0.1 to 2; (C) a thermally conductive filler: 4,000 to 7,000 parts by mass; (D) a platinum group metal-based catalyst: a catalyst amount; (E) an addition reaction control agent: 0.01 to 1 part by mass; and (F) a dimethylpolysiloxane having a trialkoxysilyl group at one end of a molecular chain and represented by the formula (1): 100 to 300 parts by mass: wherein R5 is, independently of each other, an alkyl group having 1 to 6 carbon atoms and c is an integer of 5 to 100, wherein the thermally conductive filler (C) comprises, relative to a total mass of component (C), 20 to 50 mass % of aluminum nitride (C1) having a volume median diameter in the range of 50 μm or more and less than 120 μm, 20 to 40 mass % of alumina (C2) having a volume median diameter in the range of 1 μm or more and less than 5 μm, and 2 to 10 mass % of alumina (C3) having a volume median diameter in the range of 0.1 μm or more and less than 1 μm.

Classes IPC  ?

85.

RESIST COMPOSITION AND PATTERN FORMING PROCESS

      
Numéro d'application 18388665
Statut En instance
Date de dépôt 2023-11-10
Date de la première publication 2024-06-27
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Ohashi, Masaki
  • Katayama, Kazuhiro
  • Yamahira, Tatsuya
  • Otomo, Yutaro
  • Ohyama, Kousuke

Abrégé

A resist composition is provided comprising (A) a polymer comprising repeat units having an acid labile group, (B) an organic solvent, and (C) an onium salt having formula: Zq+Xq− wherein Zq+ is a sulfonium, iodonium or ammonium cation, and Xq− is an anion. When processed by high-energy radiation lithography, the resist composition exhibits satisfactory sensitivity. LWR and maximum resolution and is resistant to pattern collapse.

Classes IPC  ?

  • G03F 7/039 - Composés macromoléculaires photodégradables, p.ex. réserves positives sensibles aux électrons
  • G03F 7/004 - Matériaux photosensibles
  • G03F 7/029 - Composés inorganiques; Composés d'onium; Composés organiques contenant des hétéro-atomes autres que l'oxygène, l'azote ou le soufre
  • G03F 7/20 - Exposition; Appareillages à cet effet

86.

REFLECTIVE MASK BLANK

      
Numéro d'application 18541922
Statut En instance
Date de dépôt 2023-12-15
Date de la première publication 2024-06-27
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Kosaka, Takuro
  • Ogose, Taiga

Abrégé

A reflective mask blank which is a material for a reflective mask used in EUV lithography in which EUV light is exposure light, including a substrate, a reflective multilayer film that is formed on one main surface of the substrate, has a periodically laminated structure in which layers having a comparatively low refractive index with respect to exposure light and layers having a comparatively high refractive index with respect to the exposure light are alternately laminated, and reflects the exposure light, a protection film that is formed in contact with the reflective multilayer film, and an absorber film that is formed in contact with the protection film, absorbs the exposure light, and has a film stress of not more than a film stress in the case of forming the absorber film directly on the substrate.

Classes IPC  ?

  • G03F 1/24 - Masques en réflexion; Leur préparation

87.

Reflective Mask Blank, Reflective Mask, and Manufacturing Method Thereof

      
Numéro d'application 18542142
Statut En instance
Date de dépôt 2023-12-15
Date de la première publication 2024-06-27
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Ogose, Taiga
  • Kosaka, Takuro
  • Inazuki, Yukio

Abrégé

A reflective mask blank comprising a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects exposure light, and a protection film that is formed on the multilayer reflection film, comprises ruthenium (Ru) and niobium (Nb), and includes a portion having a low ruthenium (Ru) content in the thickness direction compared with both ruthenium (Ru) contents at the side close to the multilayer reflection film and at the side remotest from the multilayer reflection film.

Classes IPC  ?

  • G03F 1/24 - Masques en réflexion; Leur préparation

88.

SILOXANE COMPOUND AND A METHOD FOR PREPARING THE SAME

      
Numéro d'application 18550825
Statut En instance
Date de dépôt 2022-03-16
Date de la première publication 2024-06-27
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s) Okamura, Kaoru

Abrégé

[Purpose ]One of the purposes of the present invention is to provide a siloxane compound having an amide bond and a (meth)acrylate group. Further, other purpose of the present invention is to provide a method for preparing a siloxane compound having beneficial purity as a medical material. [Purpose ]One of the purposes of the present invention is to provide a siloxane compound having an amide bond and a (meth)acrylate group. Further, other purpose of the present invention is to provide a method for preparing a siloxane compound having beneficial purity as a medical material. [Solution] A siloxane compound represented by the following formula (1), having at least two groups represented by the following formula (2) in one molecular [Purpose ]One of the purposes of the present invention is to provide a siloxane compound having an amide bond and a (meth)acrylate group. Further, other purpose of the present invention is to provide a method for preparing a siloxane compound having beneficial purity as a medical material. [Solution] A siloxane compound represented by the following formula (1), having at least two groups represented by the following formula (2) in one molecular wherein R is, independently of each other, a monovalent hydrocarbon group having 1 to 10 carbon atoms, R1 is, independently of each other, a group defined for R or a group represented by the following formula (2) or (3), R2 is, independently of each other, a group represented by the following formula (2) or (3), p is an integer of 0 to 500, q is an integer of 0 to 50, provided that said formula (1) has at least two groups represented by the following formula (2), the bonding order of the siloxane units is not limited and may form a block structure or a random bonding, [Purpose ]One of the purposes of the present invention is to provide a siloxane compound having an amide bond and a (meth)acrylate group. Further, other purpose of the present invention is to provide a method for preparing a siloxane compound having beneficial purity as a medical material. [Solution] A siloxane compound represented by the following formula (1), having at least two groups represented by the following formula (2) in one molecular wherein R is, independently of each other, a monovalent hydrocarbon group having 1 to 10 carbon atoms, R1 is, independently of each other, a group defined for R or a group represented by the following formula (2) or (3), R2 is, independently of each other, a group represented by the following formula (2) or (3), p is an integer of 0 to 500, q is an integer of 0 to 50, provided that said formula (1) has at least two groups represented by the following formula (2), the bonding order of the siloxane units is not limited and may form a block structure or a random bonding, wherein R3 is a hydrogen atom or a methyl group, R4 is a hydrogen atom or a monovalent hydrocarbon group having 1 to 6 carbon atoms, L1 is a divalent hydrocarbon group having 1 to 5 carbon atoms, L2 is a divalent hydrocarbon group having 2 to 10 carbon atoms and which may contain an ether bond, and the site marked with * or ** is a binding position to the silicon atom in formula (1).

Classes IPC  ?

  • C08G 77/26 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant de l'azote
  • C08G 77/38 - Polysiloxanes modifiés par post-traitement chimique

89.

AN ADHESIVE MATERIAL HAVING MICROSTRUCTURES AND PERMEATION-RESISTENT PROPERTIES

      
Numéro d'application 17909798
Statut En instance
Date de dépôt 2022-02-28
Date de la première publication 2024-06-27
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Glass, Paul Samuel
  • Deluca, Aimee L.
  • Aksak, Burak

Abrégé

An adhesive material providing permeation-resistant characteristics, wherein the material comprises a surface having a plurality of microstructures interspersed with at least one ridge. The ridge is adapted to make continuous contact with a mating surface. In one embodiment, the ridge is linear. In an alternative embodiment, the ridge has a square pattern forming a mesh on the surface.

Classes IPC  ?

  • C09J 7/00 - Adhésifs sous forme de films ou de pellicules

90.

PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD

      
Numéro d'application 18285408
Statut En instance
Date de dépôt 2022-03-04
Date de la première publication 2024-06-27
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Maruyama, Hitoshi
  • Hayashi, Kumiko

Abrégé

Provided is a photosensitive resin composition containing: (A) a silicone resin containing an acid-crosslinkable group; (B) an alicyclic epoxy compound represented by formula (B1) or (B2); med (C) a photo-acid-generating agent. Provided is a photosensitive resin composition containing: (A) a silicone resin containing an acid-crosslinkable group; (B) an alicyclic epoxy compound represented by formula (B1) or (B2); med (C) a photo-acid-generating agent. Provided is a photosensitive resin composition containing: (A) a silicone resin containing an acid-crosslinkable group; (B) an alicyclic epoxy compound represented by formula (B1) or (B2); med (C) a photo-acid-generating agent. (In the formula, R11 through R46 are each independently a hydrogen atom or a C1-8 saturated hydrocarbyl group.)

Classes IPC  ?

91.

THERMALLY CONDUCTIVE COMPOSITE SHEET AND METHOD FOR MOUNTING HEAT-GENERATING ELECTRONIC COMPONENT

      
Numéro d'application 18285913
Statut En instance
Date de dépôt 2022-02-22
Date de la première publication 2024-06-20
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Ishihara, Yasuhisa
  • Endo, Akihiro
  • Yoda, Masahiro

Abrégé

A thermally conductive composite sheet, includes: a thermally conductive sheet containing an organopolysiloxane elastomer and a thermally conductive filler, and having an Asker C hardness of 30 or less, surface tack force of 30 gf or more, a thickness of 0.3 mm or more, and a thermal conductivity of 0.8 W/mK or more; and an insulative resin film having a thickness of 10 μm or more and 50 μm or less and an elastic modulus of 1 GPa or more, wherein the insulative resin film is laminated on one side of the thermally conductive sheet. The thermally conductive composite sheet has high surface slidability so that a heat-generating electronic component can be easily mounted thereon, and also has excellent thermal conductivity.

Classes IPC  ?

  • C09K 5/14 - Substances solides, p.ex. pulvérulentes ou granuleuses
  • C08G 77/08 - Procédés de préparation caractérisés par les catalyseurs utilisés
  • C08G 77/12 - Polysiloxanes contenant du silicium lié à l'hydrogène
  • C08G 77/20 - Polysiloxanes contenant du silicium lié à des groupes aliphatiques non saturés
  • C08K 3/22 - Oxydes; Hydroxydes de métaux
  • C08K 7/18 - Sphères pleines inorganiques
  • C08K 9/06 - Ingrédients traités par des substances organiques par des composés contenant du silicium
  • C08K 13/06 - Ingrédients prétraités et ingrédients prévus dans les groupes principaux
  • H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage

92.

SILICONE OIL COMPOUND FOR DEFOAMING AGENT AND DEFOAMING AGENT COMPOSITION

      
Numéro d'application 18286872
Statut En instance
Date de dépôt 2022-03-29
Date de la première publication 2024-06-20
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s) Sakurai, Takato

Abrégé

Provided are an oil compound having a favorable initial defoaming property, and an excellent sustained defoaming capability due to a small level of deterioration with time, even in an alkaline foamed liquid in particular; and a defoaming agent composition containing such oil compound. The oil compound is a silicone oil compound (A) for a defoaming agent, which is a crosslink-treated product of: (a) 100 parts by mass of a hydrophobic organopolysiloxane having a viscosity of 10 to 100,000 mm2/s at 25° C.; and (b) 1 to 15 parts by mass of a fine powder silica, wherein in a particle size distribution of the organopolysiloxane-silica crosslinked product that is measured by single particle optical sizing (SPOS method) after diluting the oil compound with toluene, a median particle size on volumetric basis is 5 to 25 μm.

Classes IPC  ?

  • C08K 3/36 - Silice
  • B01D 19/04 - Dispersion ou prévention de la mousse par addition de substances chimiques
  • C08J 3/20 - Formation de mélanges de polymères avec des additifs, p.ex. coloration
  • C08L 83/04 - Polysiloxanes

93.

CORE-SHELL QUANTUM DOT AND METHOD FOR MANUFACTURING CORE-SHELL QUANTUM DOT

      
Numéro d'application 18287490
Statut En instance
Date de dépôt 2022-03-24
Date de la première publication 2024-06-20
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Aoki, Shinji
  • Tobishima, Kazuya
  • Nojima, Yoshihiro

Abrégé

A core-shell quantum dot and a method for manufacturing the core-shell quantum dots, wherein the core-shell quantum dot includes a semiconductor nanocrystal core including group II-VI elements having Zn and at least one of S, Se, or Te, and a semiconductor nanocrystal shell that coats the semiconductor nanocrystal core and contains a shell layer of a single layer or plurality of layers including group II-VI elements. At least one shell layer is an Mg-containing shell layer. As a result, a core-shell quantum dot is provided that exhibits an improved quantum yield and an improved fluorescence light emission efficiency and that has a narrow emission half-value width.

Classes IPC  ?

  • C09K 11/88 - Substances luminescentes, p.ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du sélénium, du tellure ou des chalcogènes non spécifiés
  • B82Y 15/00 - Nanotechnologie pour l’interaction, la détection ou l'actionnement, p.ex. points quantiques comme marqueurs en dosages protéiques ou moteurs moléculaires
  • B82Y 20/00 - Nano-optique, p.ex. optique quantique ou cristaux photoniques
  • B82Y 30/00 - Nanotechnologie pour matériaux ou science des surfaces, p.ex. nanocomposites
  • B82Y 40/00 - Fabrication ou traitement des nanostructures
  • C09K 11/55 - Substances luminescentes, p.ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du béryllium, du magnésium, des métaux alcalins ou métaux alcalino-terreux
  • H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
  • H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
  • H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents

94.

ROOM-TEMPERATURE-CURABLE SILICONE COATING COMPOSITION AND ARTICLE

      
Numéro d'application 18287680
Statut En instance
Date de dépôt 2022-04-13
Date de la première publication 2024-06-20
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Fujiwara, Akitsugu
  • Sakamoto, Takafumi

Abrégé

A room-temperature-curable silicone coating composition comprising (A) an organopolysiloxane resin of a three-dimensional net structure which has an R3SiO1/2/SiO4/2 molar ratio of 0.5-1.5, contains a given amount of silanol groups, and has a molecular weight of 2,000-10,000, (B) a silane compound having three or more hydrolyzable groups in the molecule and/or a product of partial hydrolytic condensation of the silane compound, (C) a linear diorganopolysiloxane in which both ends of the molecular chain have been blocked with silanol groups, and (D) a moisture-curing initiator comprising an oligomer of an organotitanium compound, the room-temperature-curable silicone coating composition giving a cured object having a durometer A hardness of 50 or greater. This composition can be an alcohol elimination type room-temperature-curable silicone coating composition which can be easily produced at low cost, has excellent long-term storage stability, and gives high-hardness cured objects (coating films), the cured coating films combining transparency with heat resistance.

Classes IPC  ?

  • C09D 183/04 - Polysiloxanes
  • C08G 77/38 - Polysiloxanes modifiés par post-traitement chimique
  • C08K 5/5415 - Composés contenant du silicium contenant de l'oxygène contenant au moins une liaison Si—O
  • C08L 83/04 - Polysiloxanes
  • C09D 7/63 - Adjuvants non macromoléculaires organiques

95.

CURABLE ORGANOPOLYSILOXANE COMPOSITION AND SEMICONDUCTOR DEVICE

      
Numéro d'application 18285897
Statut En instance
Date de dépôt 2022-03-31
Date de la première publication 2024-06-20
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Yamada, Kunihiro
  • Hosoda, Narimi
  • Tsuji, Kenichi

Abrégé

Provided is a curable organopolysiloxane composition that is in the form of a grease before curing, has an excellent workability and heat dissipation effect, and is capable of being turned into a cured product exhibiting no cracks and voids at the time of curing. The composition contains: (A) organopolysiloxanes (A-1) and (A-2) each having at least two silicon atom-bonded alkenyl groups per molecule, and exhibiting different viscosities which are 0.01 to 10 Pa·s for (A-1), and 11 to 1,000 Pa·s for (A-2); (B) an organohydrogenpolysiloxane; (C) gallium and/or gallium alloy(s) that have melting points of −20 to 70° C.; (D) a thermally conductive filler; (E) a platinum group metal catalyst; and (G-1) an organopolysiloxane represented by the following general formula (1), Provided is a curable organopolysiloxane composition that is in the form of a grease before curing, has an excellent workability and heat dissipation effect, and is capable of being turned into a cured product exhibiting no cracks and voids at the time of curing. The composition contains: (A) organopolysiloxanes (A-1) and (A-2) each having at least two silicon atom-bonded alkenyl groups per molecule, and exhibiting different viscosities which are 0.01 to 10 Pa·s for (A-1), and 11 to 1,000 Pa·s for (A-2); (B) an organohydrogenpolysiloxane; (C) gallium and/or gallium alloy(s) that have melting points of −20 to 70° C.; (D) a thermally conductive filler; (E) a platinum group metal catalyst; and (G-1) an organopolysiloxane represented by the following general formula (1), Provided is a curable organopolysiloxane composition that is in the form of a grease before curing, has an excellent workability and heat dissipation effect, and is capable of being turned into a cured product exhibiting no cracks and voids at the time of curing. The composition contains: (A) organopolysiloxanes (A-1) and (A-2) each having at least two silicon atom-bonded alkenyl groups per molecule, and exhibiting different viscosities which are 0.01 to 10 Pa·s for (A-1), and 11 to 1,000 Pa·s for (A-2); (B) an organohydrogenpolysiloxane; (C) gallium and/or gallium alloy(s) that have melting points of −20 to 70° C.; (D) a thermally conductive filler; (E) a platinum group metal catalyst; and (G-1) an organopolysiloxane represented by the following general formula (1), wherein R1s represent alkyl groups, R2 represents an alkyl group, a is an integer of 5 to 100, b is an integer of 1 to 3.

Classes IPC  ?

  • C08G 77/24 - Polysiloxanes contenant du silicium lié à des groupes organiques contenant des atomes autres que le carbone, l'hydrogène et l'oxygène groupes contenant des halogènes
  • C08J 7/12 - Modification chimique
  • C08K 3/08 - Métaux
  • C08K 3/22 - Oxydes; Hydroxydes de métaux

96.

UV-CURABLE SILICONE COMPOSITION FOR STEREOLITHOGRAPHY, CURED PRODUCT THEREOF, AND METHOD FOR PRODUCING CURED PRODUCT

      
Numéro d'application 18285929
Statut En instance
Date de dépôt 2022-03-31
Date de la première publication 2024-06-20
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Matsumoto, Nobuaki
  • Kitagawa, Taichi
  • Kimura, Shinji

Abrégé

Provided is a UV-curable silicone composition containing: (A) an organopolysiloxane having, in one molecule, two groups represented by formula (1) Provided is a UV-curable silicone composition containing: (A) an organopolysiloxane having, in one molecule, two groups represented by formula (1) Provided is a UV-curable silicone composition containing: (A) an organopolysiloxane having, in one molecule, two groups represented by formula (1) (R1 is a monovalent hydrocarbon group, R2 is an oxygen atom or an alkylene group, R3 is an acryloyloxyalkyl group, etc., p represents a number satisfying 0≤p≤10, and a represents a number satisfying 1≤a≤3.); (B) an organopolysiloxane resin which comprises (a) a unit represented by formula (2) Provided is a UV-curable silicone composition containing: (A) an organopolysiloxane having, in one molecule, two groups represented by formula (1) (R1 is a monovalent hydrocarbon group, R2 is an oxygen atom or an alkylene group, R3 is an acryloyloxyalkyl group, etc., p represents a number satisfying 0≤p≤10, and a represents a number satisfying 1≤a≤3.); (B) an organopolysiloxane resin which comprises (a) a unit represented by formula (2) Provided is a UV-curable silicone composition containing: (A) an organopolysiloxane having, in one molecule, two groups represented by formula (1) (R1 is a monovalent hydrocarbon group, R2 is an oxygen atom or an alkylene group, R3 is an acryloyloxyalkyl group, etc., p represents a number satisfying 0≤p≤10, and a represents a number satisfying 1≤a≤3.); (B) an organopolysiloxane resin which comprises (a) a unit represented by formula (2) (R1 to R3, a and p are the same as above), (b) a R43SiO1/2 unit (R4 represents a monovalent hydrocarbon group), and (c) a SiO4/2 unit, and in which a molar ratio of the sum of the unit (a) and the unit (b) and the unit (c) is 0.6 to 1.2:1; (C) a photopolymerization initiator; and (D) an organic peroxide, wherein the UV-curable silicone composition has a viscosity applicable to a stereolithography such as a laser process, can be shaped even with a small amount of UV irradiation, and forms a cured product exhibiting excellent rubber physical properties.

Classes IPC  ?

  • C08G 77/20 - Polysiloxanes contenant du silicium lié à des groupes aliphatiques non saturés
  • B29C 64/129 - Procédés de fabrication additive n’utilisant que des matériaux liquides ou visqueux, p.ex. dépôt d’un cordon continu de matériau visqueux utilisant des couches de liquide à solidification sélective caractérisés par la source d'énergie à cet effet, p.ex. par irradiation globale combinée avec un masque
  • B33Y 10/00 - Procédés de fabrication additive
  • B33Y 70/00 - Matériaux spécialement adaptés à la fabrication additive
  • B33Y 80/00 - Produits obtenus par fabrication additive
  • C08K 5/14 - Peroxydes

97.

SHEET, HANDLING SHEET FOR THINNED WAFER, METHOD FOR HANDLING THIN WAFER, AND METHOD FOR HANDLING THIN DEVICE

      
Numéro d'application 18286653
Statut En instance
Date de dépôt 2022-04-05
Date de la première publication 2024-06-20
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Kato, Hideto
  • Oowada, Tamotsu

Abrégé

A sheet including a plurality of structures being cylindrical or hemicylindrical with 50 to 500 microns in height and 10 microns to 1 mm in diameter or prismatic structures with 100 microns to 1 mm in length and 10 microns to 1 mm in thickness on a surface, wherein the sheet has a configuration wherein the structures plurality are arranged with a same interval or a configuration wherein the structures plurality are arrayed so that the intervals maximum value is less than three times minimum value of the surface intervals, and the sheet is molded with thermosetting resin. This provides: a sheet enabling to easily handle a thinned wafer and rearranged devices sealed with a mold and having excellent chemical resistance; a handling sheet for thinned wafer including the sheet; and a method for handling thin wafer using handling sheet for thinned wafer and method for handling a thin device.

Classes IPC  ?

  • H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
  • H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés

98.

Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process

      
Numéro d'application 18501027
Statut En instance
Date de dépôt 2023-11-03
Date de la première publication 2024-06-20
Propriétaire SHIN-ETSU CHEMICAL CO., LTD. (Japon)
Inventeur(s)
  • Kobayashi, Naoki
  • Nagamachi, Nobuhiro
  • Kori, Daisuke

Abrégé

The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film used in manufacturing a semiconductor, where the compound is represented by the following general formula (A). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material. The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film used in manufacturing a semiconductor, where the compound is represented by the following general formula (A). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.

Classes IPC  ?

  • G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
  • C07F 7/00 - Composés contenant des éléments des groupes 4 ou 14 de la classification périodique
  • C07F 7/28 - Composés du titane
  • G03F 7/075 - Composés contenant du silicium
  • G03F 7/09 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires

99.

ELECTROMAGNETIC WAVE SHIELDING SHEET

      
Numéro d'application 18522473
Statut En instance
Date de dépôt 2023-11-29
Date de la première publication 2024-06-20
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Tanaka, Ryo
  • Shiobara, Toshio

Abrégé

Provided is a high-strength electromagnetic wave shielding sheet exhibiting an excellent electromagnetic wave shielding performance irrespective of the oscillation directions of millimeter waves and terahertz waves. The electromagnetic wave shielding sheet may, for example, be a sheet containing a carbon nanotube unwoven cloth that has a thickness of not larger than 1 mm, a specific resistance of not larger than 0.005 $2·cm, and a longitudinal/lateral tensile strength ratio of 0.8 to 1.25; or a sheet with such carbon nanotube unwoven cloth being impregnated with a resin and/or with the resin being laminated on the carbon nanotube unwoven cloth.

Classes IPC  ?

  • H05K 9/00 - Blindage d'appareils ou de composants contre les champs électriques ou magnétiques
  • D04H 1/4242 - Fibres de carbone
  • D04H 1/64 - Non-tissés formés uniquement ou principalement de fibres coupées ou autres fibres similaires relativement courtes à partir de voiles ou couches composés de fibres ne possédant pas des propriétés cohésives réelles ou potentielles par application, incorporation ou activation de liages chimiques ou thermoplastiques, p.ex. adhésifs l'agent de liage étant appliqué à l'état humide, p.ex. agents chimiques en dispersion ou solution

100.

Pellicle Frame Laminate and Method for Manufacturing Pellicle Using Said Laminate

      
Numéro d'application 18286520
Statut En instance
Date de dépôt 2022-04-12
Date de la première publication 2024-06-13
Propriétaire Shin-Etsu Chemical Co., Ltd. (Japon)
Inventeur(s)
  • Yanase, Yu
  • Shirasaki, Toru

Abrégé

The present disclosure provides a pellicle frame laminate with a first adhesive agent layer on an upper end face of a pellicle frame having the upper end face and a lower end face, the first adhesive agent layer being covered with a first protective sheet; and a second adhesive agent layer on the lower end face, the second adhesive agent layer being covered with a second protective sheet.

Classes IPC  ?

  • G03F 1/64 - Pellicules, p.ex. assemblage de pellicules ayant une membrane sur un cadre de support; Leur préparation caractérisés par les cadres, p.ex. du point de vue de leur structure ou de leur matériau
  • G03F 1/66 - Réceptacles spécialement adaptés aux masques, aux masques vierges ou aux pellicules; Leur préparation
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