A data storage device includes a memory device and a memory controller. The memory device includes multiple memory blocks. The memory blocks includes one or more spare memory blocks that are not written with data and one or more predetermined memory blocks that are configured as a buffer for receiving data from a host device. The memory controller is coupled to the memory device and configured to access the memory device. The memory controller is configured to determine a setting value of a number of said one or more predetermined memory blocks according to a number of currently remaining spare memory block(s), a number of the predetermined memory block(s) that has/have been written with data among said one or more predetermined memory blocks and a predetermined threshold, and configure the number of the predetermined memory block(s) as the buffer according to the setting value.
A data storage device includes a memory device and a memory controller. The memory device includes multiple predetermined memory blocks that are configured as a buffer for receiving data from a host device. The memory controller performs a write operation in response to a write command issued by the host device, and during the write operation, the memory controller maintains a first quantity count value for counting a number of the predetermined memory block(s) that has/have been written with data, determines a number of the predetermined memory block(s) which is/are released in response to the write operation and maintains a second quantity count value based on this number. After the write operation, the memory controller updates the first quantity count value based on the second quantity count value when determining that the host device has requested to perform a flush operation on the predetermined memory blocks.
A method for reading data stored in a flash memory. The flash memory comprises a plurality of memory cells and each memory cell has a particular threshold voltage. The method includes: obtaining a first threshold voltage distribution representing threshold voltages of a first group of the memory cells; obtaining a second threshold voltage distribution representing threshold voltages of a second group of the memory cells, wherein the second threshold voltage distribution is different from the first threshold voltage distribution, and the first group of the memory cells comprises at least a part of the second group of the memory cells; and controlling the flash memory to perform at least one read operation upon the first group of the memory cells according to the second threshold voltage distribution.
G11C 16/26 - Circuits de détection ou de lecture; Circuits de sortie de données
G11C 16/04 - Mémoires mortes programmables effaçables programmables électriquement utilisant des transistors à seuil variable, p.ex. FAMOS
G11C 16/06 - Circuits auxiliaires, p.ex. pour l'écriture dans la mémoire
G11C 16/34 - Détermination de l'état de programmation, p.ex. de la tension de seuil, de la surprogrammation ou de la sousprogrammation, de la rétention
4.
BRIDGE CONTROL CHIP AND ASSOCIATED SIGNAL PROCESSING METHOD
A bridge control chip includes a first interface, a second interface, and a processor, wherein the first interface is coupled to a host device, the second interface is coupled to a memory device, and the memory device is a flash memory device. The processor is arranged to execute commands in a queue in sequence, to transmit the commands in the queue to the memory device through the second interface in sequence, wherein when the processor receives one or more received commands from the host device, the processor sorts the one or more received commands and commands which are currently and temporarily stored in the queue according to a distance between a logical address of each of the one or more received commands and a logical address of a current command in the queue that is currently executed by the processor.
The invention introduces a method for scheduling and executing host data-update commands. A first queue and a second queue are provided. The first queue includes first host data-update commands each including a first logical address. The second queue includes second host data-update commands each including a second logical address. A third host data-update command including a third logical address is generated and is labeled as a first type of host data-update command according to a host command received from a host side. All the first host data-update commands of the first queue are popped out and executed in response that the third logical address is the same as any first logical address. All the second host data-update commands of the second queue are popped out and executed in response that the third logical address is the same as any second logical address.
The invention introduces a method for scheduling and executing host data-update commands. A first queue and a second queue are provided. The first queue includes first host data-update commands each including a first logical address. The second queue includes second host data-update commands each including a second logical address. A third host data-update command including a third logical address is generated and is labeled as a first type of host data-update command according to a host command received from a host side. A redundant first logical address is removed from a matched one of the first host data-update commands in response that the third logical address is the same as any first logical address. A redundant second logical address is removed from a matched one of the second host data-update commands in response that the third logical address is the same as any second logical address.
A method of a flash memory controller includes: controlling an I/O circuit using a set-feature signal, which carries a set-feature command, feature address, and parameter information, and transmitting the set-feature signal to a flash memory device; the feature address corresponds to a valid data portion or a dummy data portion following the valid data portion, and both the valid data portion and dummy data portion are comprised in a full page data which is to be written into a physical page unit of the flash memory device or to be read out from the physical page unit; the corresponding parameter information is used to record the valid data portion's column address and data length, the dummy data portion's column address and data length, the dummy data portion's column address and the valid data portion's, or the dummy data portion's data length and the valid data portion's data length.
A method of a storage device controller includes: using an interface circuit for receiving and storing different write address information of different write command signals sent from a host device, the different write address information being out of sequence; and, using multiple processor cores to rearrange the different write address information in sequence and then write data into at least one storage zone according to the different write address information rearranged in sequence.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
9.
METHOD AND APPARATUS FOR PERFORMING ACCESS MANAGEMENT OF MEMORY DEVICE IN HOST PERFORMANCE BOOSTER ARCHITECTURE WITH AID OF DEVICE SIDE TABLE INFORMATION ENCODING AND DECODING
A method and apparatus for performing access management of a memory device in a Host Performance Booster (HPB) architecture with aid of device side table information encoding and decoding are provided. The method may include: encoding internal information of the memory device and sending encoded result thereof to a host device, to allow the host device to store the encoded result in a memory within the host device as host-owned encoded device side table information at the host device; generating and storing multiple entries of address mapping control table into a RAM as at least one portion of device side table information at the memory device; decoding partial information of the host-owned encoded device side table information, performing checking operation on decoded result thereof, and selectively using the decoded result to determine physical address associated with logical address; and reading data from the NV memory according to the physical address.
G06F 12/02 - Adressage ou affectation; Réadressage
10.
METHOD AND APPARATUS FOR PERFORMING ACCESS MANAGEMENT OF MEMORY DEVICE IN HOST PERFORMANCE BOOSTER ARCHITECTURE WITH AID OF DEVICE SIDE TABLE INFORMATION ENCODING AND DECODING
A method and apparatus for performing access management of a memory device in a Host Performance Booster (HPB) architecture with aid of device side table information encoding and decoding are provided. The method may include: encoding internal information of the memory device and sending encoded result thereof to a host device, to allow the host device to store the encoded result in a memory within the host device as host-owned encoded device side table information at the host device; generating and storing multiple entries of address mapping control table into a RAM as at least one portion of device side table information at the memory device; decoding partial information of the host-owned encoded device side table information, performing checking operation on decoded result thereof, and selectively using the decoded result to determine physical address associated with logical address; and reading data from the NV memory according to the physical address.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
11.
Data processing method for improving continuity of data corresponding to continuous logical addresses as well as avoiding excessively consuming service life of memory blocks and the associated data storage device
A data storage device includes a memory device and a memory controller. When a sub-region of the memory device is selected based on a predetermined rule to perform a data rearrangement procedure, the memory controller determines whether the selected sub-region is a system data sub-region. When determining that the selected sub-region is not a system data sub-region, the memory controller performs the data rearrangement procedure on the selected sub-region to move data corresponding to logical addresses belonging to the selected sub-region to a memory space of the memory device having continuous physical addresses, and when determining that the selected sub-region is a system data sub-region, the memory controller does not perform the data rearrangement procedure on the selected sub-region.
A data storage device includes a memory device and a memory controller. The memory controller uses a first predetermined memory block as a buffer to receive data from a host device. In response to a write command received from the host device, the memory controller determines a sub-region corresponding to the write command, determines whether the sub-region is a hot-write sub-region according to a write count corresponding to the sub-region and accordingly determines whether to use a second predetermined memory block as another buffer to receive data from the host device. When the memory controller determines that the sub-region corresponding to the write command is a hot-write sub-region, the memory controller writes the data into the second predetermined memory block. When the memory controller determines that the sub-region is not a hot-write sub-region, the memory controller writes the data into the first predetermined memory block.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G06F 12/1009 - Traduction d'adresses avec tables de pages, p.ex. structures de table de page
13.
Data processing method for improving continuity of data corresponding to continuous logical addresses as well as avoiding excessively consuming service life of memory blocks and the associated data storage device
A data storage device includes a memory device and a memory controller. The memory controller maintains a write count for each sub-region of the memory device. When the memory controller has selected one or more sub-regions to perform a data rearrangement procedure, the memory controller further determines whether a selected sub-region is a hot-write sub-region according to the write count corresponding to the selected sub-region. When the memory controller determines that the selected sub-region is not a hot-write sub-region, the memory controller performs the data rearrangement procedure on the selected sub-region to move data corresponding to logical addresses belonging to the selected sub-region to a memory space of the memory device having continuous physical addresses. When the memory controller determines that the selected sub-region is a hot-write sub-region, the memory controller does not perform the data rearrangement procedure on the selected sub-region.
A data storage device includes a memory device and a memory controller. The memory controller uses a first predetermined memory block as a buffer to receive data from a host device. In response to a write command received from the host device, the memory controller determines a sub-region corresponding to the write command, determines whether the sub-region is a system data sub-region and accordingly determines whether to use a second predetermined memory block as another buffer to receive data from the host device. When the memory controller determines that the sub-region corresponding to the write command is a system data sub-region, the memory controller writes the data into the second predetermined memory block. When the memory controller determines that the sub-region corresponding to the write command is not a system data sub-region, the memory controller writes the data into the first predetermined memory block.
A method for accessing a flash memory module includes: selecting a block in the flash memory module; selecting a specific encoding/decoding setting from a plurality of sets of encoding/decoding settings at least according to an erase count of the block, wherein the plurality of sets of encoding/decoding settings include different error correction code (ECC) lengths, respectively; utilizing the specific encoding/decoding setting to encode a data to generate an encoded data; and writing the encoded data into the block.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
16.
MEMORY ACCESS MODULE FOR PERFORMING A PLURALITY OF SENSING OPERATIONS TO GENERATE DIGITAL VALUES OF A STORAGE CELL IN ORDER TO PERFORM DECODING OF THE STORAGE CELL
A method for performing memory access of a Flash cell of a Flash memory includes: performing a series of sensing operations respectively corresponding to a plurality of sensing voltages, wherein a sensing voltage of a specific sensing operation of the series of sensing operations has a sensing voltage determined according to a result of an initial sensing operation of the series of sensing operations; determining a threshold voltage of the Flash cell according to at least a digital value generated by the series of sensing operations; and using the determined threshold voltage to perform soft decoding of the Flash cell.
G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p.ex. de tension, de courant, de phase, de fréquence
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G11C 16/08 - Circuits d'adressage; Décodeurs; Circuits de commande de lignes de mots
G11C 16/26 - Circuits de détection ou de lecture; Circuits de sortie de données
17.
METHOD FOR ACCESSING FLASH MEMORY MODULE, FLASH MEMORY CONTROLLER, AND MEMORY DEVICE
A method for accessing a flash memory module includes: determining a type of data to be written into the flash memory module; selecting a specific encoding/decoding setting from a plurality of sets of encoding/decoding settings at least according to the type of data, wherein the plurality of sets of encoding/decoding settings correspond to different data lengths, respectively; utilizing the specific encoding/decoding setting to encode the data to generate encoded data; and writing the encoded data into a block of the flash memory module.
The present invention provides a fractional frequency divider, wherein the fractional frequency divider includes a plurality of registers, a counter, a control signal generator and a clock gating circuit. Regarding the plurality of registers, at least a portion of the registers are set to have values The counter is configured to sequentially generate a plurality of counter values, wherein the plurality of counter values correspond to the at least a portion of the registers, respectively, and the plurality of counter values are generated repeatedly The control signal generator is configured to generate a control signal based on the received counter value and the value of the corresponding register. The clock gating circuit is configured to refer to the control signal to mask or not mask an input clock signal to generate an output clock signal.
G06F 1/3234 - Gestion de l’alimentation, c. à d. passage en mode d’économie d’énergie amorcé par événements Économie d’énergie caractérisée par l'action entreprise
H03K 5/00 - Transformation d'impulsions non couvertes par l'un des autres groupes principaux de la présente sous-classe
H03K 21/10 - Circuits de sortie comprenant des circuits logiques
H03K 21/40 - Surveillance; Détection d'erreurs; Empêchement ou correction d'un fonctionnement incorrect du compteur
19.
FLASH MEMORY APPARATUS AND STORAGE MANAGEMENT METHOD FOR FLASH MEMORY
A flash memory method includes: classifying data into a plurality of groups of data; respectively executing error code encoding to generate first corresponding parity check code to store the groups of data and first corresponding parity check code into flash memory module as first blocks; reading out the groups of data from first blocks; executing error correction and de-randomize operation upon read out data to generate de-randomized data; executing randomize operation upon de-randomized data according to a set of seeds to generate randomized data; performing error code encoding upon randomized data to generate second corresponding parity check code; and, storing randomized data and second corresponding parity check code into flash memory module as second block; a cell of first block is used for storing data of first bit number which is different from second bit number corresponding to a cell of second block.
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p.ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p.ex. contrôle de parité, exclusion des 9 ou des 11
G11C 29/52 - Protection du contenu des mémoires; Détection d'erreurs dans le contenu des mémoires
G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p.ex. de tension, de courant, de phase, de fréquence
G11C 16/26 - Circuits de détection ou de lecture; Circuits de sortie de données
G11C 16/10 - Circuits de programmation ou d'entrée de données
20.
MEMORY CONTROLLER AND METHOD FOR BIT FLIPPING OF LOW-DENSITY PARITY-CHECK CODES
A memory controller for use in a data storage device is provided. The memory controller includes a variable-node circuit and a check-node circuit. The check-node circuit obtains a codeword difference from the variable-node circuit, and calculates a syndrome according to the codeword difference. The variable-node circuit includes a threshold-tracking circuit which is configured to track a threshold used by the variable-node circuit during a low-density parity check (LDPC) decoding process to determine whether the variable-node circuit has entered a trapping status. In response to determining that the variable-node circuit has entered the trapping status during the LDPC decoding process, the variable-node circuit switches a bit-flipping algorithm used by the variable-node circuit during the LDPC decoding process from a first flipping strategy to a post-processing flipping strategy to bring the variable-node circuit out of the trapping status. The first flipping strategy is different from the post-processing flipping strategy.
A technique for signal deskew at the non-volatile memory side. The non-volatile memory includes a plurality of dies and a signal timing adjustment circuit. The dies are grouped into storage zones. A controller is coupled to the non-volatile memory through a plurality of data lines. Through the data lines, the controller issues a plurality of commands to provide zone delay parameters to the non-volatile memory to drive the signal timing adjustment circuit at the non-volatile memory side to separately adjust data-line timing of the different storage zones.
A technique for accurate communication between a non-volatile memory and its controller. The controller accesses a storage area of the non-volatile memory through data lines, wherein the controller transmits a command through the data lines to access the storage area of the non-volatile memory. The command is further returned from the non-volatile memory to the controller through the data lines for comparison, to determine whether the command is correctly received by the non-volatile memory.
A memory controller for use in a data storage device is provided. A low-density parity check (LDPC) process performed by the memory controller includes an initial phase, a decoding phase, and an output phase. The memory controller includes a variable-node circuit and a check-node circuit. During the initial phase, the variable-node circuit performs the following steps: obtaining a channel value, that is read from a flash memory, from a channel-value memory; transmitting the channel value to the check-node circuit to calculate a syndrome; and in response to the syndrome not being 0, setting a value of a register corresponding to each entry of a plurality of entries in a variable-node memory, and entering the decoding phase.
H03M 13/11 - Détection d'erreurs ou correction d'erreurs transmises par redondance dans la représentation des données, c.à d. mots de code contenant plus de chiffres que les mots source utilisant un codage par blocs, c.à d. un nombre prédéterminé de bits de contrôle ajouté à un nombre prédéterminé de bits d'information utilisant plusieurs bits de parité
H03M 13/15 - Codes cycliques, c. à d. décalages cycliques de mots de code produisant d'autres mots de code, p.ex. codes définis par un générateur polynomial, codes de Bose-Chaudhuri-Hocquenghen [BCH]
24.
FLASH MEMORY CONTROLLER, SD CARD DEVICE, METHOD USED IN FLASH MEMORY CONTROLLER, AND HOST DEVICE COUPLED TO SD CARD DEVICE
A flash memory controller includes a processing circuit which is arranged for receiving a first command and a first portion address parameter, receiving a second command and a second portion address parameter, obtaining a complete address parameter by combining the first portion address parameter with the second portion address parameter, and performing a corresponding operation upon a flash memory according to the complete address parameter and a command type of the second command.
G06F 12/02 - Adressage ou affectation; Réadressage
G11C 7/20 - Circuits d'initialisation de cellules de mémoire, p.ex. à la mise sous ou hors tension, effacement de mémoire, mémoire d'image latente
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G06F 3/08 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement à partir de, ou vers des supports d'enregistrement distincts, p.ex. carte perforée
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 16/16 - Circuits pour effacer électriquement, p.ex. circuits de commutation de la tension d'effacement pour effacer des blocs, p.ex. des réseaux, des mots, des groupes
G11C 16/26 - Circuits de détection ou de lecture; Circuits de sortie de données
25.
METHOD AND APPARATUS FOR PERFORMING LINK MANAGEMENT OF MEMORY DEVICE IN PREDETERMINED COMMUNICATIONS ARCHITECTURE WITH AID OF HANDSHAKING PHASE TRANSITION CONTROL
A method for performing link management of a memory device in predetermined communications architecture with aid of handshaking phase transition control and associated apparatus are provided. The method may include: utilizing at least one upper layer controller of a transmission interface circuit to turn on a physical layer (PHY) circuit of the transmission interface circuit, for starting establishing a link between a host device and the memory device; before entering a first handshaking phase, utilizing the PHY circuit to receive any first incoming data sent from the host device to determine whether the any first incoming data indicates that the host device is in a corresponding first handshaking phase; and in response to the any first incoming data indicating that the host device is in the corresponding first handshaking phase, utilizing the PHY circuit to send first outgoing data that is equal to first predetermined data to the host device.
An exemplary method for reading data stored in a flash memory includes: selecting an initial gate voltage combination from a plurality of predetermined gate voltage combination options; controlling a plurality of memory units in the flash memory according to the initial gate voltage combination, and reading a plurality of bit sequences; performing a codeword error correction upon the plurality of bit sequences, and determining if the codeword error correction successful; if the codeword error correction is not successful, determining an electric charge distribution parameter; determining a target gate voltage combination corresponding to the electric charge distribution parameter by using a look-up table; and controlling the plurality of memory units to read a plurality of updated bit sequences according to the target gate voltage combination.
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p.ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p.ex. contrôle de parité, exclusion des 9 ou des 11
G11C 29/52 - Protection du contenu des mémoires; Détection d'erreurs dans le contenu des mémoires
G11C 29/02 - Détection ou localisation de circuits auxiliaires défectueux, p.ex. compteurs de rafraîchissement défectueux
G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p.ex. de tension, de courant, de phase, de fréquence
G11C 16/26 - Circuits de détection ou de lecture; Circuits de sortie de données
H03M 13/11 - Détection d'erreurs ou correction d'erreurs transmises par redondance dans la représentation des données, c.à d. mots de code contenant plus de chiffres que les mots source utilisant un codage par blocs, c.à d. un nombre prédéterminé de bits de contrôle ajouté à un nombre prédéterminé de bits d'information utilisant plusieurs bits de parité
27.
METHOD AND APPARATUS FOR PERFORMING DATA FRAGMENTATION REDUCTION CONTROL OF MEMORY DEVICE IN PREDETERMINED COMMUNICATIONS ARCHITECTURE WITH AID OF FRAGMENTATION INFORMATION DETECTION, AND ASSOCIATED COMPUTER-READABLE MEDIUM
A method for performing data fragmentation reduction control of a memory device in a predetermined communications architecture with aid of fragmentation information detection, associated apparatus and computer-readable medium are provided. The method may include: utilizing a memory controller to receive a first command from a host device through a transmission interface circuit of the memory controller; utilizing the memory controller to perform discontinuity-related calculation to generate a discontinuity-related calculation result for generating a data fragmentation degree, and send a first response; utilizing the memory controller to receive a second command from the host device through the transmission interface circuit; and utilizing the memory controller to send a second response to the host device through the transmission interface circuit to return the data fragmentation degree to the host device, for selectively performing data fragmentation reduction according to a determination result of the host device.
A memory controller coupled to a memory device for accessing the memory device and includes a Universal Asynchronous Receiver/Transmitter (UART) and a microprocessor. The microprocessor is coupled to the UART and configured to control access operations of the memory device. The microprocessor is configured to perform an interrupt service routine in response to an interrupt. When performing the interrupt service routine, the microprocessor is configured to determine whether a predetermined signal has been received by a specific pin and when determining that the predetermined signal has been received by the specific pin, the microprocessor is configured to output a debug message through a transmitting terminal of the UART.
The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for decoding a Low-Density Parity-Check (LDPC) code. The method, which is performed by a processing unit in an LDPC decoder, includes the following steps: determining whether a bit flipping algorithm when decoding a codeword enters a trapping state after an observation period during which a sequential selection strategy is used; and modifying a scheduling strategy to a non-sequential selection strategy and performing the bit flipping algorithm on the codeword under the non-sequential selection strategy when the bit flipping algorithm enters the trapping state. The codeword is divided into chunks in fixed-length and the sequential selection strategy indicates sequentially selecting the chunks in the codeword, so that the bit flipping algorithm is performed on one selected chunk only each time. The non-sequential selection strategy indicates an arbitrary selection combination of the chunks in the codeword, which is different from that under the sequential selection strategy.
H03M 13/11 - Détection d'erreurs ou correction d'erreurs transmises par redondance dans la représentation des données, c.à d. mots de code contenant plus de chiffres que les mots source utilisant un codage par blocs, c.à d. un nombre prédéterminé de bits de contrôle ajouté à un nombre prédéterminé de bits d'information utilisant plusieurs bits de parité
30.
METHOD AND APPARATUS FOR PERFORMING DATA MANAGEMENT OF MEMORY DEVICE WITH AID OF TARGETED PROTECTION CONTROL
A method for performing data management of a memory device with aid of targeted protection control and associated apparatus are provided. The method may include: receiving a first host command from a host device; sending a first operating command to a non-volatile (NV) memory to read first stored data from a first location within the NV memory; monitoring a read count of the first location to determine whether the read count of the first location reaches a read count threshold; monitoring at least one error bit count of other stored data of at least one other location within the NV memory to determine whether the at least one error bit count reaches an error bit count threshold; and starting a targeted protection procedure to process second stored data, for preventing the second stored data from being damaged by at least one reading behavior of the host device.
A method for performing data retention management of a memory device with aid of pre-shutdown control and associated apparatus are provided. The method may include: receiving a predetermined host command from a host device; in response to the predetermined host command, performing a re-programming procedure on the NV memory, for enhancing data storage reliability of the memory device, for example, reading stored data from at least one source location within the at least one NV memory element to prepare re-programming data according to the stored data, and programming the re-programming data into at least one destination location within the at least one NV memory element to be replacement of the stored data; and in response to the re-programming procedure being completed, sending completion information of the predetermined host command to the host device, to allow the host device to trigger the shutdown of the memory device.
A memory controller, for use in a data storage device, is provided. A low-density parity-check (LDPC) decoding procedure performed by the memory controller includes an initial phase, a decoding phase, and an output phase in sequence. The memory controller includes a memory-index control circuit and a decoder. The decoder includes a decoding pipeline to perform the decoding phase of the LDPC decoding procedure. After the data storage device is booted up, the decoder reads a plurality of first codewords from a variable-node memory using a first order via the memory-index control circuit for LDPC decoding. In response to the decoder determining that a specific codeword among the first codewords has decoding failure, the decoder is reset to read a plurality of second codewords from the variable-node memory using a second order via the memory-index control circuit for LDPC decoding. The first order is different from the second order.
H03M 13/00 - Codage, décodage ou conversion de code pour détecter ou corriger des erreurs; Hypothèses de base sur la théorie du codage; Limites de codage; Méthodes d'évaluation de la probabilité d'erreur; Modèles de canaux; Simulation ou test des codes
H03M 13/11 - Détection d'erreurs ou correction d'erreurs transmises par redondance dans la représentation des données, c.à d. mots de code contenant plus de chiffres que les mots source utilisant un codage par blocs, c.à d. un nombre prédéterminé de bits de contrôle ajouté à un nombre prédéterminé de bits d'information utilisant plusieurs bits de parité
H03M 13/15 - Codes cycliques, c. à d. décalages cycliques de mots de code produisant d'autres mots de code, p.ex. codes définis par un générateur polynomial, codes de Bose-Chaudhuri-Hocquenghen [BCH]
33.
FLASH MEMORY CONTROLLER AND METHOD CAPABLE OF USING ONE SET-FEATURE SIGNAL AS A MACRO EXECUTION SIGNAL TO EXECUTE MULTIPLE SET-FEATURE OPERATIONS FOR FLASH MEMORY DEVICE
A method of a flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface includes: using a set-feature signal, which carries a set-feature command, a macro execution feature address, and corresponding macro execution parameter information, as a macro execution signal and transmitting the macro execution signal to the flash memory device to make the flash memory device execute multiple set-feature operations respectively having unique information defined by the corresponding macro execution parameter information carried in the macro execution signal.
A method of a flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface includes: using a set-feature signal, which carries a set-feature command, a macro execution feature address, and corresponding macro execution parameter information, as a macro execution signal and transmitting the macro execution signal to the flash memory device to make the flash memory device execute multiple set-feature operations respectively having unique information defined by the corresponding macro execution parameter information carried in the macro execution signal.
The invention relates to a method and an apparatus for decoding a Low-Density Parity-Check (LDPC) code. The method includes the following steps, which is performed by an LDPC decoder including a variable-node calculation circuitry and a check-node calculation circuitry: A first-stage state entering when a codeword has been stored in a static random access memory (SRAM) is detected. The check-node calculation circuitry is arranged operably to perform a modulo 2 multiplication on the codeword and a parity check matrix to calculate a plurality of first syndromes in the first-stage state. A second-stage state is entered when the first syndromes indicate that the codeword obtained in the first-stage state is incorrect. The variable-node calculation circuitry is arranged operably to perform a bit flipping algorithm accordingly to generate variable nodes, and calculate second soft bits for the variable nodes in the second-stage state. The check-node calculation circuitry is arranged operably to perform the modulo 2 multiplication on the variable nodes and the parity check matrix to calculate second syndromes in the second-stage stage. A third-stage state is repeatedly entered when the second syndromes indicate that the variable nodes generated in the second-stage state are incorrect until a decoding succeeds or a total number of iterations of the third-stage state exceeds a threshold.
H03M 13/11 - Détection d'erreurs ou correction d'erreurs transmises par redondance dans la représentation des données, c.à d. mots de code contenant plus de chiffres que les mots source utilisant un codage par blocs, c.à d. un nombre prédéterminé de bits de contrôle ajouté à un nombre prédéterminé de bits d'information utilisant plusieurs bits de parité
H03M 13/37 - Méthodes ou techniques de décodage non spécifiques à un type particulier de codage prévu dans les groupes
H03M 13/00 - Codage, décodage ou conversion de code pour détecter ou corriger des erreurs; Hypothèses de base sur la théorie du codage; Limites de codage; Méthodes d'évaluation de la probabilité d'erreur; Modèles de canaux; Simulation ou test des codes
36.
APPARATUS AND METHOD FOR GENERATING LOW-DENSITY PARITY-CHECK (LDPC) CODE
The invention relates to an apparatus and a method for generating a Low-Density Parity-Check (LDPC) code. The apparatus includes: a LDPC encoder, a look-ahead circuitry and an exclusive-OR (XOR) calculation circuitry. The LDPC encoder is arranged operably to encode a front part of a user data using a 2-stage encoding algorithm with a parity check matrix to generate a first calculation result. The look-ahead circuitry is arranged operably to perform a dot product operation on a rear part of the user data and one of a plurality of feature rows corresponding to the parity check matrix to generate a second calculation result in each iteration. The XOR calculation circuitry is arranged operably to perform an XOR operation on the first calculation result and the second calculation result to generate a front part of the LDPC code.
H03M 13/11 - Détection d'erreurs ou correction d'erreurs transmises par redondance dans la représentation des données, c.à d. mots de code contenant plus de chiffres que les mots source utilisant un codage par blocs, c.à d. un nombre prédéterminé de bits de contrôle ajouté à un nombre prédéterminé de bits d'information utilisant plusieurs bits de parité
H03K 19/21 - Circuits OU EXCLUSIF, c. à d. donnant un signal de sortie si un signal n'existe qu'à une seule entrée; Circuits à COÏNCIDENCES, c. à d. ne donnant un signal de sortie que si tous les signaux d'entrée sont identiques
H03K 19/173 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion utilisant des éléments spécifiés utilisant des circuits logiques élémentaires comme composants
For an encoder for use in a flash memory controller, partial parity blocks generated in the encoder are divided into two parts for further operations, wherein a number of partial parity block(s) of the first part generated earlier is less than a number of partial parity block(s) of the second part. The encoder can reduce the hardware required for the circulant convolution calculation in the encoder, and has high efficiency. In addition, by converting a parity-check matrix to generate an isomorphic matrix, some components in the encoder and the decoder can be further omitted, so as to further reduce the manufacturing cost.
H03M 13/11 - Détection d'erreurs ou correction d'erreurs transmises par redondance dans la représentation des données, c.à d. mots de code contenant plus de chiffres que les mots source utilisant un codage par blocs, c.à d. un nombre prédéterminé de bits de contrôle ajouté à un nombre prédéterminé de bits d'information utilisant plusieurs bits de parité
H03M 13/00 - Codage, décodage ou conversion de code pour détecter ou corriger des erreurs; Hypothèses de base sur la théorie du codage; Limites de codage; Méthodes d'évaluation de la probabilité d'erreur; Modèles de canaux; Simulation ou test des codes
H03M 13/15 - Codes cycliques, c. à d. décalages cycliques de mots de code produisant d'autres mots de code, p.ex. codes définis par un générateur polynomial, codes de Bose-Chaudhuri-Hocquenghen [BCH]
38.
STORAGE DEVICE CAPABLE OF DYNAMICALLY DETERMINING WHETHER TO AND WHEN TO SEND NEXT INTERRUPT EVENT TO HOST DEVICE
A method of a storage device to be externally coupled to a host device via a specific communication interface includes: providing a flash memory unit comprising at least one flash memory; counting an outstanding command number for at least one submission queue which is used for storing information of unfinished commands; counting a completion command number for at least one completion queue which is used for storing information of finished commands; and, generating and outputting an interrupt event from the storage device to the host device when a comparison result of the counted outstanding command number with the counted completion command number matches a specific condition.
A method for performing data access management of a memory device with aid of randomness-property control and associated apparatus are provided. The method may include: receiving a plurality of host commands from a host device and performing data access on the NV memory according to the plurality of host commands, for example, in response to at least one host write command, programming data into at least one single level cell (SLC) block to be first stored data corresponding to a data reception stage; and performing a seed-aware garbage collection (GC) procedure to collect valid data among the first stored data of the at least one SLC block into at least one non-SLC block to be second stored data corresponding to a data storage stage, for example, performing a randomness-property checking operation on multiple seeds to selectively determine respective data of multiple pages within the SLC block as target data.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G06F 12/02 - Adressage ou affectation; Réadressage
40.
METHOD AND APPARATUS FOR READING DATA STORED IN FLASH MEMORY BY REFERRING TO BINARY DIGIT DISTRIBUTION CHARACTERISTICS OF BIT SEQUENCES READ FROM FLASH MEMORY
A method for reading data stored in a flash memory includes at least the following steps: controlling the flash memory to perform a plurality of read operations upon a plurality of memory cells included in the flash memory; obtaining a plurality of bit sequences read from the memory cells, respectively, wherein the read operations read bits of a predetermined bit order from the memory cells by utilizing different control gate voltage settings; and determining readout information of the memory cells according to binary digit distribution characteristics of the bit sequences.
G11C 16/26 - Circuits de détection ou de lecture; Circuits de sortie de données
G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p.ex. de tension, de courant, de phase, de fréquence
G11C 16/04 - Mémoires mortes programmables effaçables programmables électriquement utilisant des transistors à seuil variable, p.ex. FAMOS
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p.ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p.ex. contrôle de parité, exclusion des 9 ou des 11
G11C 29/52 - Protection du contenu des mémoires; Détection d'erreurs dans le contenu des mémoires
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G11C 16/34 - Détermination de l'état de programmation, p.ex. de la tension de seuil, de la surprogrammation ou de la sousprogrammation, de la rétention
H03M 13/15 - Codes cycliques, c. à d. décalages cycliques de mots de code produisant d'autres mots de code, p.ex. codes définis par un générateur polynomial, codes de Bose-Chaudhuri-Hocquenghen [BCH]
41.
INITIALIZATION METHODS AND ASSOCIATED CONTROLLER, MEMORY DEVICE AND HOST
The present invention provides a method performed by a secure digital (SD) card supporting both an SD mode and a peripheral component interconnect express (PCIe) mode for initializing the SD card. The method includes: (a) after receiving a first supply voltage through a first voltage supply pin from a host coupled to the SD card, entering the SD mode if the SD card is not in the PCIe mode and a CMD0 command for entering the SD mode is received through a command pin from the host coupled to the SD card; and (b) after receiving the first supply voltage through the first voltage supply pin from the host coupled to the SD card, performing a PCIe linkup process if the SD card is not in the SD mode and a second supply voltage is received through a second voltage supply pin from the host coupled to the SD card. The SD card enters the PCIe mode if the PCIe linkup process succeeds.
A method for managing a memory apparatus including a plurality of physical blocks, and a volatile memory includes: obtaining a first host address and first data, and obtaining a second host address and second data; linking the first host address and second host address to a first page and second page of the physical block, and storing the first data and second data into the physical block; building a valid/invalid page count table according to a valid/invalid page count of the physical block; building a valid page position table according to the valid/invalid page count table, and storing the valid/invalid page count table in the volatile memory; and when a valid/invalid page count of the physical block indicates the physical block should be erased, using the valid page position table to move valid pages of the physical block to another physical block.
The present invention provides a control method of the flash memory controller. In the control method, after receiving a deallocate command from a host device, the flash memory controller will update a valid page count table, a detailed valid page count table and/or a zone valid page count table according to deallocate command, for the flash memory controller to efficiently and quickly determine if any one of the zones does not have any valid data, so that the flash memory controller can recommend the host device to send a reset command to reset the zone.
A method for performing access management in a memory device, the associated memory device and the controller thereof, and the associated electronic device are provided. The method may include: receiving a host command and a logical address from a host device; performing at least one checking operation to obtain at least one checking result, for determining whether to load a logical-to-physical (L2P) table from the NV memory to a random access memory (RAM) of the memory device, wherein the L2P table includes address mapping information for accessing the target data, and performing the at least one checking operation to obtain at least one checking result includes checking whether a first L2P-table index pointing toward the L2P table and a second L2P-table index sent from the host device are equivalent to each other; and reading the target data from the NV memory, and sending the target data to the host device.
The present invention provides a method for accessing a flash memory module, wherein the method includes the steps of: writing data into a plurality of pages of a specific block, and establishes or updates a F2H mapping table based on physical addresses of the plurality of pages and logical addresses of the data; using the F2H mapping table to update a H2F mapping table; initializing a flush-bitmap, wherein the flush-bitmap records a plurality of flush bits corresponding to the physical addresses of the plurality of pages, respectively; receiving a trim command from a host device, wherein the trim command asks to mark at least one of the logical addresses of the data as invalid; updating the H2F mapping data according to the trim command; updating the flush-bitmap according to the trim command; and writing the updated H2F mapping table and the updated flush-bitmap into the flash memory module.
A data storage device with flash memory. The controller receives a mode selection command from a host. In response to the mode selection command, the controller sends a ready-to-transfer message to the host, to further receive a data out message from the host that is sent by the host in response to the ready-to-transfer message. The ready-to-transfer message and the data out message are UFS protocol information unit (UPIU) messages. The data out message is arranged to rewrite a first mode page setting among a plurality of mode page settings of firmware stored in the flash memory. In response to the data out message, the controller determines whether the data out message will change mode parameters which cannot be rewritten in the first mode page setting, to adopt or refuse new mode parameters issued through the data out message for the first mode page setting.
A method for performing data access performance shaping of a memory device and associated apparatus are provided. The method may include: receiving a plurality of host commands from a host device, for performing data access on the NV memory according to the plurality of host commands; and monitoring the plurality of host commands to control respective performance metrics of a plurality of access control groups of the memory device with a dual-state leaky bucket (LB) model, wherein regarding any access control group, for example: determining at least one first performance metric according to at least one first command to be a first LB fill level of a dual-state LB; in response to the first LB fill level being below a state threshold, determining the dual-state LB to be in a first predetermined state, and configuring the dual-state LB to have a first predetermined drain rate, for dynamically adjusting performance quota.
The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for data access in response to a host discard command. The method includes: allocating space in a random access memory (RAM) for an expanded discard table; receiving the host discard command from a host side; appending new entries each including one first logical address to the expanded discard table; and setting a start-address register and/or an end-address register in a performance engine for redefining an address range in the RAM that stores the expanded discard table, thereby enabling the performance engine to search the expanded discard table in the address range in the RAM for determining whether a specific logical address of user data is no longer used.
A data processing method includes reading a memory device in response to a read command to respectively read multiple portions of predetermined data; respectively writing the portions in a buffer memory to complete data transfers of the portions of the predetermined data; sequentially providing access information corresponding to each portion of the predetermined data in response to completion of the data transfer of the corresponding portion; obtaining the access information of the predetermined data and accordingly generating multiple descriptors in chronological order of obtaining the access information; receiving and buffering the descriptors in a descriptor pool; sequentially selecting a latest descriptor from the descriptor pool according to a tag value and providing the latest descriptor to a direct memory access engine; and reading the buffer memory according to the latest descriptor to obtain at least a portion of the predetermined data by the direct memory access engine.
A method for evaluating a margin of at least one parameter utilized by a transmission interface includes: step (A) setting a value of a first parameter utilized by a host device to a first test value selected from a first group; (B) setting a value of a second parameter utilized by a data storage device to a second test value selected from a second group; (C) controlling the data storage device to perform a predetermined testing procedure to test whether the data storage device functions normally when the first test value and the second test value are applied; and (D) changing the first test value or the second test value and re-performing steps (A) to (C), wherein step (D) is repeatedly performed until all the test values in the first group and the second group have been tested.
The present invention provides a control method of a flash memory controller, wherein the flash memory controller is configured to access a flash memory module, the flash memory module includes a plurality of planes, and each plane includes a plurality of blocks; and the control method includes the steps of: after the flash memory controller is powered on, reading a first code bank from a specific block of the plurality of blocks; storing the first code bank into a buffer memory; executing the first code bank to manage the flash memory module; when the flash memory controller starts a code bank swapping operation, trying to read a second code bank from a super block; if the second code bank is read successfully, storing the second code bank into the buffer memory to replace the first code bank; and executing the second code bank to manage the flash memory module.
A method for performing access management of a memory device with aid of serial number assignment timing control and associated apparatus are provided. The method includes: managing a plurality of spare blocks with a spare pool; popping a first block from the spare pool to be a host data block, and performing first subsequent operations, wherein the host data block is arranged to receive data from a host device, and serial number assignment of the host data block corresponds to a timing of fully programing the host data block; and popping a second block from the spare pool to be a garbage collection (GC) destination block, and performing second subsequent operations, wherein the GC destination block is arranged to receive data from a GC source block during a GC procedure, and serial number assignment of the GC destination block corresponds to a timing of starting using the GC destination block.
A method of caching mapping table for use in a flash memory device having a flash memory controller and a flash memory is provided. The method includes: in response to a host read command, determining whether a group of a logical-to-physical (L2P) required by handling the host read command has been loaded to a DRAM of the flash memory controller; if the required group of the L2P mapping table has not been loaded to the DRAM, loading the required group of the L2P mapping table from the flash memory to a SRAM of the flash memory controller; directly accessing the SRAM to obtain an L2P address associated with the host read command from the required group of the L2P mapping table; and performing a read operation on the flash memory in response to the host read command according to the obtained L2P address.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G06F 12/02 - Adressage ou affectation; Réadressage
54.
FLASH MEMORY CONTROLLER AND METHOD CAPABLE OF SENDING READ COMMAND OR DATA TOGGLE COMMAND TO ASK FOR FLASH MEMORY DEVICE RETURN MORE PLANE DATA OF DIFFERENT PLANES
A method of a flash memory controller includes: providing an input/output (I/O) circuit coupled to a flash memory device through a specific communication interface; and, controlling a processor sending a specific read command or a data toggle command through the I/O circuit and the specific communication interface into the flash memory device, to make the flash memory device perform a data toggle operation to control the flash memory device’s data register selecting and transferring a first data unit and a second data unit to the flash memory device’s I/O control circuit to make the I/O control circuit sequentially transmit the first data unit and the second data unit to the flash memory controller through the specific communication interface in response to the specific read command or the data toggle command.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
55.
Flash memory device, controller, and method capable of performing access operation upon data unit(s) of multiple planes of flash memory device in response one simplified command sequence
A flash memory scheme simplifies the command sequences transmitted between a flash memory device and a flash memory controller into a simplified command sequence so as to reduce the waiting time period of the command transmission and improve the performance of flash memory.
A solution for deteriorated non-volatile memory is shown. When determining that raw data read from the non-volatile memory is undesirable data, the controller updates a deterioration table to record a deteriorated logical address of the raw data that is the undesirable data. When performing garbage collection from a source block associated with the deteriorated logical address to a destination block and determining that the deteriorated logical address is listed in the deterioration table, the controller invalidates target data stored in the source block and mapped to the deteriorated logical address, without moving the target data from the source block to the destination block in the garbage collection.
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p.ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p.ex. contrôle de parité, exclusion des 9 ou des 11
G06F 11/07 - Réaction à l'apparition d'un défaut, p.ex. tolérance de certains défauts
G06F 12/02 - Adressage ou affectation; Réadressage
57.
FLASH MEMORY DEVICE, CONTROLLER, AND METHOD CAPABLE OF PERFORMING ACCESS OPERATION UPON DATA UNIT(s) OF MULTIPLE PLANES OF FLASH MEMORY DEVICE IN RESPONSE ONE SIMPLIFIED COMMAND SEQUENCE
A flash memory scheme simplifies the command sequences transmitted between a flash memory device and a flash memory controller into a simplified command sequence so as to reduce the waiting time period of the command transmission and improve the performance of flash memory.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G06F 12/02 - Adressage ou affectation; Réadressage
58.
Flash memory device, controller, and method capable of performing access operation upon data unit(s) of multiple planes of flash memory device in response one simplified command sequence
A flash memory scheme simplifies the command sequences transmitted between a flash memory device and a flash memory controller into a simplified command sequence so as to reduce the waiting time period of the command transmission and improve the performance of flash memory.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G11C 16/04 - Mémoires mortes programmables effaçables programmables électriquement utilisant des transistors à seuil variable, p.ex. FAMOS
G11C 16/08 - Circuits d'adressage; Décodeurs; Circuits de commande de lignes de mots
G11C 16/10 - Circuits de programmation ou d'entrée de données
G11C 16/14 - Circuits pour effacer électriquement, p.ex. circuits de commutation de la tension d'effacement
G11C 16/26 - Circuits de détection ou de lecture; Circuits de sortie de données
59.
FLASH MEMORY CONTROLLER AND METHOD CAPABLE OF SENDING READ COMMAND OR DATA TOGGLE COMMAND TO ASK FOR FLASH MEMORY DEVICE RETURN MORE PLANE DATA OF DIFFERENT PLANES
A flash memory device is disclosed. The memory cell array has a first plane and a second plane and stores a first data unit and a second data unit. The data register buffers the first data unit and the second data unit transmitted from the memory cell array when a read command or a data toggle command is received and stored by the command register. The control circuit performs a data toggle operation to control the data register selecting and transferring the first data unit and the second data unit to the I/O control circuit to make the I/O control circuit sequentially transmit the first data unit and the second data unit to the flash memory controller through a specific communication interface in response to the read command or the data toggle command. The transmission of the first data unit is followed by the transmission of the second data unit.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
60.
FLASH MEMORY CONTROLLER AND METHOD CAPABLE OF SENDING DATA TOGGLE SET-FEATURE SIGNAL TO ENABLE, DISABLE, OR CONFIGURE DATA TOGGLE OPERATION OF FLASH MEMORY DEVICE
A method of a flash memory controller includes: providing an input/output (I/O) circuit coupled to the flash memory device; and sending a data toggle set-feature signal to the flash memory device to enable, disable, or configure a data toggle operation of the flash memory device; the data toggle operation of the flash memory device is arranged to make the flash memory device control the flash memory device's data register selecting and transferring a first data unit and a second data unit to the flash memory device's I/O control circuit to make the I/O control circuit sequentially transmit the first data unit and the second data unit to the flash memory controller through the specific communication interface in response to a specific read command or a data toggle command transmitted by the flash memory controller.
A solution for deteriorated non-volatile memory is shown. When a controller determines that raw data read from the non-volatile memory is undesirable data, the controller performs safety moving of valid data of an erasure unit that contains the raw data to safely move the valid data of the erasure unit, wherein the erasure unit is a high-risk block, and the raw data in the non-volatile memory is regarded as being in a deteriorated physical address. Prior to being moved in the safety moving, the raw data is changed so that it is different from the undesirable data. In an exemplary embodiment, the undesirable data is all-1's data or all-0's data.
A solution for deteriorated non-volatile memory is shown. When determining that raw data read from the non-volatile memory is undesirable data, the controller updates a deterioration table to record a deteriorated logical address of the raw data that is the undesirable data. In response to a read request that a host issues to read the non-volatile memory for data of the deteriorated logical address, the controller obtains the deteriorated logical address from the deterioration table and informs the host that deterioration has happened at the deteriorated logical address.
A method of a flash memory controller used to be externally coupled to a host device and a flash memory, comprising: providing a multi-processor having a plurality of processing units; receiving a trim command and a logical block address (LBA) range sent from the host device; separating multiple operations of the trim command into N threads according to at least one of a number of the processing units, types of the multiple operations, numbers of execution cycles of the multiple operations, and portions of the LBA range; using the processing units to execute the N threads individually; and maximizing a number of execution cycles during which the processing units are busy.
A method of caching mapping table for use in a flash memory device having a flash memory controller and a flash memory is provided. The method includes: in response to a host read/write command, checking a G2F mapping table to determine whether a required group of a L2P mapping table has been loaded to a DRAM of the flash memory controller and accordingly obtain a node index indicating which memory node of the DRAM the group is stored in; recording the node index to a first region of a SRAM of the flash memory controller; accessing the DRAM to obtain an L2P address indicating a physical address that is associated with the host read/write command from the group of the L2P mapping table by referencing the node index stored in the first region of the SRAM; and performing a read/write operation on the flash memory according to the L2P address.
The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for dynamically updating an optimization read voltage (RV) table. The method includes: obtaining a data-read transaction and replying with the data-read transaction to a host side after listening to a first request for read-performance data, which is issued by the host side, thereby enabling the data-performance transaction to be used in an update of the optimization RV table for a designated memory-cell type; and programming multiple records of an updated optimization RV table for the designated memory-cell type into a designated location of the NAND-flash module after listening to a second request for updating the optimization RV table for the designated memory-cell type, which is issued by the host side. The data-read transaction includes a current environmental parameter of a NAND-flash module, the designated memory-cell type and a bit error rate (BER). Each record includes one set of RV parameters and an environmental parameter associated with the set of RV parameters.
The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for reading data with an optimization read voltage (RV) table. The method includes: determining one set of RVs for a designated memory-cell type according to a current environmental parameter of a NAND-flash module and content of the optimization RV table; and reading data on a page corresponding to the designated memory-cell type from the NAND-flash module with the set of RVs. The optimization RV table includes multiple records and each record includes one set of RV parameters and an environmental parameter associated with the set of RV parameters.
A method for performing access management of a memory device with aid of buffer usage reduction control and associated apparatus are provided. The method includes: determining whether any host command among a plurality of host commands from a host device is a trim-related read command, wherein the trim-related read command represents a read command indicating that reading from at least one trimmed location is required; in response to the any host command being the trim-related read command, determining an estimated trim-related read operation count regarding a data buffer according to a trimmed range of the at least one trimmed location and a predetermined unit size of accessing the data buffer; writing predetermined trimmed data having the predetermined unit size into the data buffer; and controlling a transmission interface circuit to read the predetermined trimmed data from the data buffer multiple times, for being returned to the host device.
The invention is related to an apparatus and a method for driving redundant array of independent disks (RAID) engine. The method, performed by a RAID controller in a RAID pre-processor, including: completing a driving operation for performing a series of physical-layer signal interactions with a RAID engine according to a driving value in the configuration register. The driving value corresponds to a command issued by a processing unit. The processing unit performs an operation irrelevant from an encoding or a decoding of a parity of a page group in parallel of the driving operation by the RAID controller in coordination with the RAID engine.
The present invention provides a control method of a flash memory controller wherein the control method includes the steps of: selecting a first block; reading pages of the first block and determining a bit error rate or a bit error count of each page; for each of the pages, if the bit error rate or the bit error count of the page is not greater than a first threshold value, moving the data of the page into a second block; and for each of the pages, if the bit error rate or the bit error count of the page is greater than the first threshold value, moving the data of the page into a third block; wherein a number of pages corresponding to a word line of the second block is less than a number of pages corresponding to a word line of the third block.
A method and apparatus for performing access control of a memory device with aid of additional physical address information are provided. The method includes: during a garbage collection procedure, reading valid data from a source block and writing the valid data into a destination block; updating at least one logical-to-physical address mapping table; receiving a first read request from a host device, wherein the first read request indicates reading at a first logical address; in response to the first read request, reading the valid data of the destination block according to the second physical address associated with the first logical address; receiving a second read request from the host device, wherein the second read request indicates reading at the first logical address; and in response to the second read request, reading the valid data of the source block according to the first physical address associated with the first logical address.
The invention introduces an apparatus for detecting errors during data encryption. The apparatus includes a key generation circuitry and a key-error detection circuitry. The key generation circuitry is arranged operably to realize a key expansion operation for generating multiple round keys based on a root key in an encryption algorithm, where the encryption algorithm encodes plaintext or an intermediate encryption result with one round key in a corresponding round. The error detection circuitry is arranged operably to: calculate redundant data corresponding to each round key; and output an error signal to a processing unit when finding that any round key does not match corresponding redundant data at a check point during the key expansion operation.
H04L 9/06 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité l'appareil de chiffrement utilisant des registres à décalage ou des mémoires pour le codage par blocs, p.ex. système DES
72.
APPARATUS AND METHOD FOR DETECTING ERRORS DURING DATA ENCRYPTION
The invention introduces an apparatus for detecting errors during data encryption. The apparatus includes an encoding circuitry and an error detection circuitry. The encoding circuitry is arranged operably to realize an encryption algorithm including multiple rounds, in which of each round encodes plaintext or an intermediate encryption result with a round key. The error detection circuitry is arranged operably to: calculate redundant data corresponding to the intermediate encryption result; and output an error signal to a processing unit when finding that the intermediate encryption result does not match the redundant data at a check point during an encryption process.
H04L 9/06 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité l'appareil de chiffrement utilisant des registres à décalage ou des mémoires pour le codage par blocs, p.ex. système DES
A memory controller includes an error correction code engine, a buffer memory and a microprocessor. In response to a first decoding result of predetermined data, the microprocessor performs a repeated read operation on a memory device to obtain multiple read results of a data chunk having the predetermined data. The data chunk includes multiple bits. The microprocessor further performs a data reconstruction and error correction procedure according to the read results of the data chunk. In an operation of data reconstruction, the microprocessor determines a bit value corresponding to each bit in the data chunk according to the read results of the data chunk to generate a reconstructed data chunk. In an operation of error correction, the microprocessor provides the reconstructed data chunk to the error correction code engine to obtain a second decoding result of the predetermined data.
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p.ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p.ex. contrôle de parité, exclusion des 9 ou des 11
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
A data storage device includes multiple storage modules. Each storage module includes a storage which having a memory device and a first memory controller and a second memory controller. The first memory controller is coupled to the memory device for accessing the memory device. The second memory controller is coupled to the storage for accessing the storage. The first memory controller includes a first transmission interface. The second memory controller includes a second transmission interface. The first memory controller and the second memory controller communicate with each other through the first transmission interface and the second transmission interface.
A bridge device includes a first controller and a second controller. The first controller includes a first transmission interface. The second controller is coupled to the first controller and includes a second transmission interface coupled to the first transmission interface. The first transmission interface and the second transmission interface are both flash memory interface.
An interface circuit includes a signal processing circuit configured to process a reception signal received from a host device and a transmission signal to be transmitted to the host device. The signal processing circuit includes multiple signal processing devices and a calibration device. The calibration device is coupled to the signal processing devices and configured to sequentially calibrate a characteristic value of each signal processing device in a calibration procedure.
A method, for calibrating signal processing devices in an interface circuit coupled to a host device, comprises: negotiating with the host device in a link up process about an operation mode for the interface circuit to operate in a calibration procedure; and calibrating a characteristic value of a first signal processing device and a characteristic value of a second signal processing device in the calibration procedure. The first signal processing device is disposed on a receiving signal processing path and configured to process a received signal and the second signal processing device is disposed on a transmitting signal processing path and configured to process a transmitting signal, and the interface circuit is configured to operate based on the operation mode in the calibration procedure.
The invention relates to a method, a non-transitory computer-readable program product and an apparatus for updating a host-to-flash address mapping (H2F) table. The method includes: allocating space in a random access memory (RAM) for a first H2F sub-table and intermediate information, which is used to update a second H2F sub-table in a flash module; updating the first H2F sub-table and the intermediate information temporarily stored in the RAM during an execution of a host write command or a host discard command; and in a table update procedure, programming the first H2F sub-table temporarily stored in the RAM into a system block in the flash module, updating the second H2F sub-table according to the intermediate information stored in the RAM, and programming updated second H2F sub-table into the system block in the flash module.
A method and apparatus for performing access control of a memory device with aid of multi-stage garbage collection (GC) management are provided. The method includes: during a first GC stage, sending a first simple read command to the NV memory in order to try reading first valid data from a first source block, sending the first valid data into an internal buffer of the NV memory, for being programed into a first destination block, sending a second simple read command to the NV memory in order to try reading second valid data from the first source block, and in response to reading the second valid data from the first source block being unsuccessful, preventing retrying reading the second valid data from the first source block; completing at least one host-triggered operation; and during a second GC stage, retrying reading the second valid data from the first source block.
The present invention provides a storage device including a controller and methods for operating the storage device and the controller. A controller of a storage device may comprise: an interface controller; a memory controller; a processor configured to transmit downstream commands and upstream commands to the memory controller. The memory controller may be coupled between the interface controller and the processor and may comprise: a first command queue; a second command queue; and a tag generator. The memory controller may be configured to: store a first command received from the processor in the first command queue; store a second command received from the processor in the second command queue; and in response to a first access region of the first command overlapping a second access region of the second command in the second queue, assign an order tag to the second command based on a first serial number of the first command by the tag generator.
The present invention provides a storage device including a controller and methods for operating the storage device and the controller. A controller of a storage device may comprise: an interface controller; a memory controller; a processor configured to transmit downstream commands and upstream commands to the memory controller. The memory controller may be coupled between the interface controller and the processor and may comprise: a first command queue; a second command queue; and a racing handler. The memory controller may be configured to: store a first command received from the processor in the first command queue; transmit, to the interface controller, first information associated with the first command; store a second command received from the processor in the second command queue; transmit, to the interface controller, second information associated with the second command; and in response to a second access region of the second command overlapping a first access region of the first command, assign a second serial number for the second command based on a first serial number for the first command by the racing handler.
The present invention provides a control method of a flash memory controller, wherein the flash memory controller is configured to access a flash memory module, and the control method includes the steps of: receiving a settling command from a host device to configure a portion space of the flash memory module as a zoned namespace; receiving a write command from the host device to write data corresponding a first zone into a plurality of blocks of the flash memory module, wherein an access mode chose by the flash memory controller is determined based on a size of each zone and a size of each block.
The present invention provides a fractional frequency divider, wherein the fractional frequency divider includes a plurality of registers, a counter, a control signal generator and a clock gating circuit. Regarding the plurality of registers, at least a portion of the registers are set to have values The counter is configured to sequentially generate a plurality of counter values, wherein the plurality of counter values correspond to the at least a portion of the registers, respectively, and the plurality of counter values are generated repeatedly The control signal generator is configured to generate a control signal based on the received counter value and the value of the corresponding register. The clock gating circuit is configured to refer to the control signal to mask or not mask an input clock signal to generate an output clock signal.
H03K 21/10 - Circuits de sortie comprenant des circuits logiques
G06F 1/3234 - Gestion de l’alimentation, c. à d. passage en mode d’économie d’énergie amorcé par événements Économie d’énergie caractérisée par l'action entreprise
H03K 5/00 - Transformation d'impulsions non couvertes par l'un des autres groupes principaux de la présente sous-classe
H03K 21/40 - Surveillance; Détection d'erreurs; Empêchement ou correction d'un fonctionnement incorrect du compteur
84.
Data storage device and selecting bad data block method thereof
A data storage device and a selecting bad data block method thereof which includes: writing data to a sample block; reading written data of the sample block as read data; comparing the read data and the written data of each data column in sample block, and calculating a number of error bits in each chunk accordingly; selecting a column with the largest number of error bits in a chunk with the largest number of error bits as a bad data column; and recording the sample block as a bad data block when determining that the number of error bits in the chunk is greater than or equal to the first threshold value and the number of bad columns in the chunk is greater than or equal to the second threshold value.
A data storage device, and an error tolerance selecting method thereof which includes: writing data to data blocks of the data storage device; reading written data of the data blocks as read data; comparing the read data and the written data of each data column in the data blocks, and calculating a number of error bits in each chunk including a plurality of data columns accordingly; calculating a difference value between the number of error bits in the chunk and a first threshold value to store the difference value in an error tolerance list; and selecting a largest difference value in the error tolerance list as an error tolerance.
A method for performing data access control of a memory device with aid of a predetermined command and associated apparatus are provided. The method may include: utilizing the memory controller to receive a first single command from a host device through a transmission interface circuit of the memory controller; and in response to the first single command conforming to a predetermined format of the predetermined command, utilizing the memory controller to perform a series of operations according to the first single command, wherein the first single command represents a first migrate command, for migrating from a first source logical address to a first destination logical address. The series of operations may include: reading first data at the first source logical address; writing the first data at the first destination logical address; and controlling the memory device to make the first data at the first source logical address become invalid data.
A method for performing data access control of a memory device with aid of a predetermined command and associated apparatus are provided. The method may include: utilizing the memory controller to receive a first single command from a host device through a transmission interface circuit of the memory controller; and in response to the first single command conforming to a predetermined format of the predetermined command, utilizing the memory controller to perform a series of operations according to the first single command, wherein the first single command represents a first duplicate command, for duplicating from a first source logical address to a first destination logical address. The series of operations may include: reading first data at the first source logical address; and writing the first data at the first destination logical address.
A selecting bad data column method suitable for a data storage device is provided. The data storage device includes a control unit and a data storage medium. The selecting method performed by the control unit includes: reading written data of each data column as read data; comparing the read data and the written data of each data column to calculate an average number of error bits of each data column; determining whether the average number of error bits of each data column is greater than or equal to a predetermined value; and recording a data column as a bad data column when the average number of error bits of the data column is greater than or equal to the predetermined value. In this way, in order to avoid the problems that the error correction code can't be corrected or the correction capability is excessively consumed.
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p.ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p.ex. contrôle de parité, exclusion des 9 ou des 11
G06F 11/07 - Réaction à l'apparition d'un défaut, p.ex. tolérance de certains défauts
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
89.
Method and apparatus for performing access control of memory device with aid of aggressor bit information
A method and apparatus for performing access control of a memory device with aid of aggressor bit information are provided. The method includes: receiving a first host read command from a host device; sending a first read command to the NV memory in order to try reading first data from a first page; sending a second read command to the NV memory to obtain soft-decoding information and performing a first soft-decoding operation according to the soft-decoding information in order to try obtaining the first data from the first soft-decoding operation; reading multiple bits from at least one aggressor page to be the aggressor bit information; converting the soft-decoding information into adjusted soft-decoding information according to the aggressor bit information of the at least one aggressor page; and performing a second soft-decoding operation according to the adjusted soft-decoding information to obtain the first data from the second soft-decoding operation.
G06F 12/00 - Accès à, adressage ou affectation dans des systèmes ou des architectures de mémoires
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G06F 12/02 - Adressage ou affectation; Réadressage
H03M 13/11 - Détection d'erreurs ou correction d'erreurs transmises par redondance dans la représentation des données, c.à d. mots de code contenant plus de chiffres que les mots source utilisant un codage par blocs, c.à d. un nombre prédéterminé de bits de contrôle ajouté à un nombre prédéterminé de bits d'information utilisant plusieurs bits de parité
90.
Method and apparatus for performing automatic setting control of memory device in predetermined communications architecture with aid of auxiliary setting management
A method for performing automatic setting control of a memory device in predetermined communications architecture with aid of auxiliary setting management and associated apparatus are provided. The method may include: during initialization of the memory device, utilizing a processing circuit within a memory controller to load an auxiliary setting management table from a non-volatile memory into at least one storage unit of a hardware control circuit within the memory controller to be a loaded auxiliary setting management table, wherein the hardware control circuit is used for the automatic setting control; and utilizing the hardware control circuit within the memory controller to detect occurrence of a series of events according to state information of a transmission interface circuit within the memory controller, and to dynamically perform parameter setting on the transmission interface circuit according to the series of events, for reconfiguring the transmission interface circuit at runtime of the memory device.
A method for performing access management in a memory device, the associated memory device and the controller thereof, and the associated electronic device are provided. The method may include: receiving a host command and a logical address from a host device; performing at least one checking operation to obtain at least one checking result, for determining whether to load a logical-to-physical (L2P) table from the NV memory to a random access memory (RAM) of the memory device, wherein the L2P table includes address mapping information for accessing the target data, and performing the at least one checking operation to obtain at least one checking result includes checking whether a first L2P-table index pointing toward the L2P table and a second L2P-table index sent from the host device are equivalent to each other; and reading the target data from the NV memory, and sending the target data to the host device.
G06F 12/1009 - Traduction d'adresses avec tables de pages, p.ex. structures de table de page
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G06F 12/02 - Adressage ou affectation; Réadressage
G06F 12/14 - Protection contre l'utilisation non autorisée de mémoire
92.
Method and apparatus for performing communications specification version control of memory device in predetermined communications architecture with aid of compatibility management, and associated computer-readable medium
A method for performing communications specification version control of a memory device in predetermined communications architecture with aid of compatibility management, associated apparatus and computer-readable medium are provided. The method may include: utilizing a memory controller to receive a first command from a host device through a transmission interface circuit of the memory controller; utilizing the memory controller to execute a device-side compatibility management procedure of a compatibility management function to detect whether the host device conforms to any version of multiple predetermined versions of a predetermined communications specification according to the first command to generate a detection result, and selectively switch from one firmware version to another firmware version according to the detection result; and utilizing the memory controller to send a first response to the host device through the transmission interface circuit, wherein the first response is sent to the host device in response to the first command.
The invention relates to a method and an apparatus for programming data into flash memory. The method includes: obtaining, by the accelerator, an execution table indicating that data related to the first virtual carrier need to go through a mid-end and a back-end processing stages earlier than data related to other virtual carriers; driving, by the routing engine, a host interface (I/F) to obtain data associated with all cargos in the second virtual carrier, updating the second cargo flags with third cargo flags to indicate that data associated with all the cargos in the second virtual carrier are prepared in the front-end processing stage; and determining, by the accelerator, that data associated with any cargo in the first virtual carrier hasn’t been prepared according to information of the first cargo flags, and disallowing the second virtual carrier to proceed to the following processing stages.
09 - Appareils et instruments scientifiques et électriques
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Data storage devices; Data processing apparatus; Computers; Computer memory devices; Computer programs [downloadable software]; Computer programs, recorded; Computer software; Flash memory; Computer firmware; Work stations [computers]; Computer terminals; Internet servers; Computer hardware; Interfaces for computers; Card readers; Data carriers; Chips [integrated circuits]; Semi-conductors; Integrated circuits. Design of integrated circuits; Research and development of new products for others; Computer software design; Computer programming; Maintenance of computer software; Computer systems analysis; Advisory services relating to computer software design; Computer programming for data processing; Information technology consultancy; Electronic data storage; Providing information relating to computer technology and programming via a website; Cloud computing; Software as a service [SaaS].
95.
Data storage device and method for rewriting parameters thereof
A data storage device is provided. The data storage device includes a flash memory and a controller. The flash memory stores a firmware that includes a plurality of mode page settings, and each mode page setting includes a plurality of mode parameters. The controller receives a data out message arranged to rewrite a first mode page setting among the plurality of mode page settings. When determining, based on a reference array, that the data out message will change the mode parameters which cannot be rewritten in the first mode page setting, the controller rejects to change the mode parameters which cannot be rewritten in the first mode page setting. The reference array stores a rewriteable setting for each bit of the first mode page setting.
The invention relates to a method, and an apparatus for programming data into flash memory. The method includes: driving, by the routing engine, a host interface (I/F) according to the front-end parameter set when determining that a front-end processing stage needs to be activated for the data-programming transaction; driving, by the accelerator, a Redundant Array of Independent Disks (RAID) engine according to the mid-end parameter set when receiving an activation message of the data-programming transaction from the routing engine and determining that a mid-end processing stage needs to be activated; and driving, by the accelerator, a data access engine according to the back-end parameter set when determining that the mid-end processing stage for the data-write transaction does not need to be activated or the mid-end processing stage for the data-write transaction has been completed, and a back-end processing stage for the data-write transaction needs to be activated.
The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for programming data into flash memory. The method includes: generating a front-end parameter set, a mid-end parameter set and a back-end parameter set for each data-programming transaction; transmitting the front-end parameter set of each data-programming transaction to a routing engine, thereby enabling the routing engine to drive a host interface (I/F) to obtain from the host side; transmitting the mid-end parameter set of each data-programming transaction to an accelerator, thereby enabling the accelerator to drive the RAID engine to encrypt raw data or generate parity-page data according to multiple pages of the raw data; and transmitting the back-end parameter set of each data-programming transaction to the accelerator, thereby enabling the accelerator to drive a data access engine to program source data into a designated physical address of a flash module.
The invention relates to a method, and an apparatus for programming data into flash memory. The method includes: reading operating settings of a virtual carrier; setting a redundant array of independent disks (RAID) engine for driving the RAID engine to complete a designated encryption or encoding operation on first data associated with the virtual carrier when the operation settings indicate that the first data associated with the virtual carrier need to go through a mid-end processing stage; and sending a programming index to a data access engine for driving the data access engine to read a programming table from the SRAM, and program the second data associated with the virtual carrier into a designated address in a flash module when the operation settings indicate that the second data associated with the virtual carrier need to go through the back-end processing stage.
The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for accessing to encoding-history information. The method includes: providing a super-block formed by storage space of flash units, where the super-block includes zones, each zone includes super-page strings, and each super-page string includes pages across the flash units; and programming encoding-history information into a metadata section of a designated first page of a designated super-page string, thereby enabling a damaged page that is occurred in the designated super-page string of the designated zone to be recovered according to the encoding-history information. The encoding-history information includes a history profile and history entries. The history profile indicates which zone or zones are covered in the super-block, and a quantity of the history entries. Each history entry includes information indicating that a designated second page of the designated super-page string in a designated zone hasn’t been passed through an engine to generate a parity for the designated super-page string.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p.ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p.ex. contrôle de parité, exclusion des 9 ou des 11
100.
Method, memory controller, and memory system for reading data stored in flash memory
An exemplary method for reading data stored in a flash memory includes: selecting an initial gate voltage combination from a plurality of predetermined gate voltage combination options; controlling a plurality of memory units in the flash memory according to the initial gate voltage combination, and reading a plurality of bit sequences; performing a codeword error correction upon the plurality of bit sequences, and determining if the codeword error correction successful; if the codeword error correction is not successful, determining an electric charge distribution parameter; determining a target gate voltage combination corresponding to the electric charge distribution parameter by using a look-up table; and controlling the plurality of memory units to read a plurality of updated bit sequences according to the target gate voltage combination.
G11C 11/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p.ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p.ex. contrôle de parité, exclusion des 9 ou des 11
G11C 29/52 - Protection du contenu des mémoires; Détection d'erreurs dans le contenu des mémoires
G11C 29/02 - Détection ou localisation de circuits auxiliaires défectueux, p.ex. compteurs de rafraîchissement défectueux
G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p.ex. de tension, de courant, de phase, de fréquence
G11C 16/26 - Circuits de détection ou de lecture; Circuits de sortie de données
H03M 13/11 - Détection d'erreurs ou correction d'erreurs transmises par redondance dans la représentation des données, c.à d. mots de code contenant plus de chiffres que les mots source utilisant un codage par blocs, c.à d. un nombre prédéterminé de bits de contrôle ajouté à un nombre prédéterminé de bits d'information utilisant plusieurs bits de parité
G11C 29/04 - Détection ou localisation d'éléments d'emmagasinage défectueux
