A packaging substrate can include a first surface having a first mounting region of a first electronic module region and a second mounting region of a second electronic module region, the second electronic module region being adjacent to the first electronic module region. The packaging substrate can include a second opposing surface having a first electrical contacts region of the first electronic module region and a second electrical contacts region of the second electronic module region. A saw street region can extend between the first and second electronic module regions, and a saw street feature can be formed on the second opposing surface within at least a portion of the saw street region, the saw street feature comprising a solder mask layer over a metal layer and being spaced from the first and second electronic module regions.
This application relates to an amplification circuit comprising: a power amplifier stage configured to receive a supply voltage and an RF signal to be amplified; a biasing circuit configured to receive an envelope signal produced from the RF signal and input a bias signal into the power amplifier, said bias signal varying based on the envelope signal such that the bias signal dynamically modulates an output impedance of the power amplifier based on the envelope signal; and an output stage configured to output an amplified RF signal generated by the power amplifier.
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
This application relates to a method of amplifying an radio frequency signal using a power amplifier, the method comprising the steps of: inputting a supply voltage into the power amplifier; inputting the radio frequency signal to be amplified into the power amplifier; inputting a time-calibrated bias signal into the power amplifier that varies based on an envelope signal produced from the radio frequency signal, said envelope signal indicating an envelope of the radio frequency signal and said bias signal being time calibrated to within 3 ns of the envelope of the radio frequency signal; and amplifying, by the power amplifier, the radio frequency signal based at least in part on the bias signal.
According to certain aspects, a packaging substrate can include a plurality of layers including an outer layer, and one or more components on a surface of the outer layer. The one or more components can include a radio-frequency circuit, where the radio-frequency circuit is covered by a protective coating configured to reduce surface roughness of the outer layer and not covered by solder resist.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
5.
ENHANCED BULK ACOUSTIC WAVE RESONATOR PERFORMANCE USING METALLIC BRAGG MIRRORS
Aspects and embodiments include a bulk acoustic wave resonator comprising a layer of piezoelectric material, an upper electrode disposed on top of the layer of piezoelectric material, the upper electrode including a metallic Bragg mirror having alternating layers of a first metal and a second metal, and a lower electrode disposed on a bottom of the layer of piezoelectric material, the lower electrode including a metallic Bragg mirror having alternating layers of a third metal and a fourth metal.
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
According to certain aspects, devices and methods can be provided for forming packaging substrates having ringless vias. For instance, a method of forming one or more vias in a packaging substrate can include: laminating a plurality of layers of a packaging substrate; drilling a via hole through the plurality of layers using a through drill, the plurality of layers not including a capture pad or ring along a path of the through drill for drilling the via hole; and forming a via in the via hole using a plating process.
Variable-gain amplifiers can include configurable impedance circuits. For example, a variable-gain amplifier can operate in a plurality of gain modes to amplify a signal with different levels of amplification. The variable-gain amplifier can include a gain circuit configured to amplify a signal and an impedance circuit coupled to the gain circuit. The impedance circuit can include an inductor and a capacitive arm coupled in parallel to the inductor. The impedance circuit can operate based on a current gain mode to change an impedance for the variable-gain amplifier. For example, the capacitive arm can be controlled to change inductance for the different gain modes of the variable-gain amplifier.
H03F 3/72 - Amplificateurs commandés, c. à d. amplificateurs mis en service ou hors service au moyen d'un signal de commande
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
8.
FAST SRS ANTENNA PORT SWITCHING FOR FREQUENCY-DIVISION DUPLEXING
Methods and systems for fast sounding reference symbol (SRS) antenna port switching for FDD. A mobile device can include a baseband processor and a front end including a transmit power amplifier, a first transmit path, and a second transmit path. The front end can be configurable in a first mode to transmit via the first transmit path within a transmit band of a frequency division duplex band. The front end can be further configurable in a second mode to transmit via the second transmit path within a receive band of the frequency division duplex band.
Aspects and embodiments disclosed herein include filter module comprising an input port to receive a radio frequency signal, a first output port connected to an antenna, a filter disposed along a fundamental signal path from the input port to the first output port, and a second output port to output a harmonic signal generated in response to the RF signal, the second output port being electrically connected to a node on the fundamental signal path via a harmonic signal path including a resonating structure configured to improve a linearity response of the filter module, the resonating structure including resonators electrically connected to each other in anti-series or anti-parallel and disposed on a piezoelectric film, a polarity direction of a first half of the resonators opposite to a polarity direction of a second half of the resonators when a voltage is applied across the piezoelectric film.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
10.
METHOD FOR PERFORMING A LAYOUT OF A BULK ACOUSTIC WAVE FILTER
Disclosed herein is a bulk acoustic wave filter comprising a number of acoustic wave resonators, each acoustic wave resonator being encompassed by a polygon including vertices of a mesh optimized to provide a reduced filter size of the bulk acoustic wave filter integrated on a die.
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
H03H 9/17 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs se composant de matériau piézo-électrique ou électrostrictif ayant un résonateur unique
11.
TONE TRACKING AND CANCELLATION FOR RADIO RECEIVERS
Aspects of this disclosure relate to canceling a tone in a radio signal. A location of an interfering tone can be estimated in an orthogonal frequency division multiplexing symbol (OFDM). An interfering tone can be detected in a subsequent OFDM symbol based on the estimate of the location of the interfering tone in the OFDM using closed loop tone detection. The interfering tone in the subsequent ODFM can be canceled. Tone cancellation can be performed using digital signal processing circuitry. Tone cancellation can be performed in radio systems.
A radio frequency front end system includes a first frequency division duplex path corresponding to a first frequency division duplex band and including a first duplexer. The system can also include a first time division duplex transmit path corresponding to a first time division duplex band that overlaps with the first frequency division duplex band. The first time division duplex transmit path can have a first transmit amplifier and a first switch. The switch can be configured in at least one first operating mode of the radio frequency front end system, to connect the first transmit amplifier to a first antenna via the first duplexer to transmit in the first time division duplex band.
A radio frequency front end system including a first RF module. The first RF module comprises a first transmit path including a first power amplifier, and a second transmit path including the first power amplifier. The first transmit path is configured for communication in a first transmit frequency range according to a first radio access technology, and the second transmit path is configured for communication in a second transmit frequency range according to a second radio access technology. The first radio access technology is a WiFi, and the second radio access technology is cellular.
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04B 1/48 - Commutation transmission-réception dans des circuits pour connecter l'émetteur et le récepteur à une voie de transmission commune, p.ex. par l'énergie de l'émetteur
14.
SYSTEMS, DEVICES, AND METHODS RELATED TO CONFIGURING MULTI-STREAM NETWORK BASED ON STREAM CAPABILITY
In some embodiments, a system can include a first stream to be opened with an arbiter device, the first stream associated with a first set of capabilities, a second stream to be opened with the arbiter device, the second stream associated with a second set of capabilities, and a wireless network architecture that determines a network messaging schedule based on the first set of capabilities and the second set of capabilities. The network messaging schedule can be sent to one or more client devices associated with the first stream or the second stream.
Apparatus and methods for phase shifters with switched transmission line loads are provided herein. In certain embodiments, a phase shifter includes a first port, a first controllable reflective load, a second port, a second controllable reflective load, and a pair of coupled lines that are electromagnetically coupled to one another. The pair of coupled lines includes a first conductive line between the first port and the first controllable reflective load and a second conductive line between the second controllable reflective load and the second port. At least one of the first controllable reflective load or the second controllable reflective load includes a switched transmission line load.
A surface acoustic wave device has a trench formed adjacent to at least one interdigital transducer electrode into the piezoelectric substrate. The trench can be adapted to enhance confinement of acoustic wave energy provided by the interdigital transducer electrode.
A radio frequency front-end system includes a duplexer. A downlink portion of the duplexer filters a receive signal received by an antenna to output a filtered receive signal and having a passband corresponding to a receive channel of an FDD band. An uplink portion of the duplexer filters an amplified transmit signal and has a passband corresponding to a transmit channel of the FDD band. A receive amplifier amplifies the filtered receive signal. A post-amplifier receive circuit includes a first noise filter having a stopband corresponding to the transmit channel and selectively outputs either the amplified receive signal or a filtered version of the amplified receive signal.
A radio frequency front-end system includes an FDD duplexer. a receive amplifier amplifies a filtered receive signal output by the duplexer to output an amplified receive signal. the receive amplifier including a first amplified output and a second amplified output. A first noise filter connected to the first amplified output and having a stopband corresponding to the transmit channel. A switch selectively outputs either 1) the receive signal filtered by the noise filter or 2) the second amplified output.
A multi-loop clock signal generator includes a first phase-locked loop circuit configured to generate a control signal and a voltage-controlled oscillator configured to generate an output clock signal based on the control signal. The clock signal generator includes a second phase-locked loop circuit configured to generate an adjusted first divider value for the first phase-locked loop circuit. The clock signal generator further includes a target frequency calculation circuit configured to calculate a target frequency for the second phase-locked loop circuit based on a target frequency ratio of the second phase-locked loop circuit calculated based on frequency offset ratios of the first and second clock signals with respect to a reference signal.
H03L 7/099 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
H03L 7/195 - Synthèse de fréquence indirecte, c. à d. production d'une fréquence désirée parmi un certain nombre de fréquences prédéterminées en utilisant une boucle verrouillée en fréquence ou en phase en utilisant un diviseur de fréquence ou un compteur dans la boucle une différence de temps étant utilisée pour verrouiller la boucle, le compteur entre des nombres fixes ou le diviseur de fréquence divisant par un nombre fixe dans laquelle le compteur de la boucle compte entre deux nombres différents non nuls, p.ex. pour la génération d'une fréquence de correction
A power amplifier includes a power amplifier stage configured to amplify a signal received from an attenuator or from a variable gain amplifier. An open loop transient gain compensation circuit compensates a transient turn-on gain variation of the power amplifier stage with a transient compensation current added to a bias current supplied to the attenuator or supplied to the variable gain amplifier.
H03G 3/30 - Commande automatique dans des amplificateurs comportant des dispositifs semi-conducteurs
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H04W 52/52 - Commande de puissance d'émission [TPC Transmission power control] utilisant des circuits ou des amplificateurs de commande automatique de gain [AGC Automatic Gain Control]
H04W 84/12 - Réseaux locaux sans fil [WLAN Wireless Local Area Network]
21.
AMPLIFIER CIRCUIT ASSEMBLY, A RADIO FREQUENCY MODULE AND A MOBILE DEVICE INCLUDING THE SAME
An amplifier circuit assembly has a power supply that generates a supply voltage that changes based on a radio frequency signal and powers a cascade amplifier module. The amplifier modules amplifies the radio frequency signal and includes a first amplifier stage and a second amplifier stage configured to operate in respective operation modes. The first and second amplifier stages have first and second supply nodes floated from a ground by first and second adjustable capacitances, respectively. A switch connects or disconnects the first supply node and the second supply node depending on the respective operation modes.
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H04B 1/401 - Circuits pour le choix ou l’indication du mode de fonctionnement
An electronic package and method of manufacture are provided. The method includes providing an electronic module. The electronic module has a group of electrically conductive nodes. The method includes providing a substrate panel, in which a plurality of electrically conductive contact pads are arranged on a surface of the substrate panel, a predetermined one of the plurality of electrically conductive contact pads associated with the group of the electrically conductive nodes. The method includes defining a solder masking arrangement extending over a part of the surface of the substrate panel to overlie the predetermined electrically conductive contact pad such that the masking arrangement at least partially defines a group of spatially distinct fusion areas each associated with a corresponding one of the group of the electrically conductive nodes. The method includes coupling the group of electrically conductive nodes to the group of spatially distinct fusion areas by use of corresponding intermediate solder portions.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
23.
ACOUSTIC WAVE FILTER AND METHOD OF IMPROVING FREQUENCY DISTRIBUTION IN RESONATORS FOR SAME
An acoustic wave filter includes a plurality of acoustic wave resonators configured to filter a radio frequency signal, each of the plurality of acoustic wave resonators having a different frequency response and including a piezoelectric structure and a metal top electrode structure, one or more of the acoustic wave resonators having a mass loading portion that is a single seamless piece with the metal top electrode.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 3/04 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs pour obtenir une fréquence ou un coefficient de température désiré
H03H 9/13 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux se composant de matériaux piézo-électriques ou électrostrictifs
An interdigital transducer assembly for a surface acoustic wave device has a pair of busbars with a plurality of interdigitated electrode fingers therebetween. Each electrode finger begins its length at one of the busbars and has an electrode tip that extends towards but does not reach the other busbar. A pair of mass loading strips are each disposed above a respective set of the electrode tips and having a plurality of mass loading stubs arranged along the length of the mass loading strip, with the stubs each aligned with a corresponding electrode tip.
An electronic package and method of manufacture are provided. The electronic package has a substrate panel, an electronic module mounted to a surface of the substrate panel, and a plurality of electrically conductive contact pads arranged on the surface of the substrate panel. The electronic module includes a group of electrically conductive nodes. A predetermined one of the plurality of electrically conductive contact pads is associated with the group of electrically conductive nodes. The group of electrically conductive nodes is coupled to a corresponding group of spatially distinct fusion areas of the predetermined electrically conductive contact pad by corresponding intermediate solder portions. A solder masking arrangement extends over a part of the surface of the substrate panel. The masking arrangement is arranged over the predetermined electrically conductive contact pad and configured to at least partially define the group of spatially distinct fusion areas.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/10 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés
Aspects of this disclosure relate to a radio frequency system with tunable notch filtering. The radio frequency system includes a first tunable filter and a second tunable filter. The first tunable filter is coupled between an output of a power amplifier and a radio frequency switch. The second tunable filter is coupled between an antenna switch and an antenna node. The second tunable filter has a notch at a lower frequency than a notch of the first tunable filter. Related methods and wireless communication devices are also disclosed.
Techniques for frame-based noise reduction and other signal processing techniques are provided that are able to reduce latency below the frame length. This may be accomplished by using an asymmetric trapezoidal (or quasi-trapezoidal) filter. Instead of cross-fading between successive frames taking up half the frame length, the cross-fading between successive frames is reduced to 10-25% of the frame length, for example. This allows the latency to be reduced to 60-75% of the frame length (plus the signal processing time) instead of the full frame length (plus the signal processing time) in prior techniques.
Surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength λ can include a substrate and a piezoelectric layer implemented over the substrate to have a thickness greater than 2λ. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric layer to have mass density and thickness selected to provide a tuned mass-loading property for the thickness of the piezoelectric layer.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
H03H 9/145 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
29.
FRONT END ARCHITECTURE FOR SELECTIVELY ADDING EXTERNAL CARRIER AGGREGATION BAND
Aspects of this disclosure relate to a front end architecture for selectively adding an external carrier aggregation band. A switch element can connect a radio frequency signal path to an antenna path through a frequency domain multiplexer, such as a diplexer, in a first mode. The switch element can connect the radio frequency path to the antenna path and bypass the frequency domain multiplexer in a second mode. The frequency domain multiplexer can be external to a front end module that include the radio frequency signal path. In the first mode, a front end system can support carrier aggregation with a band associated with circuitry implemented external to the front end module.
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04B 7/26 - Systèmes de transmission radio, c. à d. utilisant un champ de rayonnement pour communication entre plusieurs postes dont au moins un est mobile
H04L 5/14 - Fonctionnement à double voie utilisant le même type de signal, c. à d. duplex
H04Q 11/02 - Dispositifs de sélection pour systèmes multiplex pour multiplex à division de fréquence
30.
APPARATUS AND METHODS FOR POWER AMPLIFIER SIGNAL LIMITING
Apparatus and methods for power amplifier signal limiting are disclosed. In certain embodiments, a front-end system includes a low noise amplifier that amplifies a radio frequency receive signal during a receive frame, a power amplifier that amplifies a radio frequency transmit signal during a transmit frame, and a signal limiter operable to limit a signal power of the power amplifier in an attenuating mode. The signal limiter includes a radio frequency detector configured to generate a detection signal based on detecting a power level of the radio frequency transmit signal, and a latch that locks the signal limiter in the attenuating mode in response to activation of the detection signal. The latch is reset by a bias signal of the power amplifier that is activated during the transmit frame and deactivated during the receive frame.
An integrated circuit includes a demodulator to demodulate a signal simultaneously transmitted over an isolation communication channel and obtain gate information and configuration information. The demodulator includes a gate demodulation path and a configuration demodulation path. The received signal oscillates at a first frequency to represent a first state, oscillates at different frequencies to represent a seconds state, oscillates at a third frequency (or third and fourth frequencies), which are lower than the first frequency, to represent a third state, and the received signal is steady state to represent a fourth state. The gate demodulation path detects the first and second states. The configuration demodulation path includes first and second sub-demodulation paths. An envelope detector in the first sub-demodulation path detects the second state and the second sub-demodulation path detects the third state. The configuration demodulation paths uses an output of the gate demodulation path.
H04L 27/06 - Circuits de démodulation; Circuits récepteurs
H03K 17/56 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs
H03M 1/38 - Valeur analogique comparée à des valeurs de référence uniquement séquentiellement, p.ex. du type à approximations successives
32.
ACOUSTIC WAVE DEVICE WITH MULTI-LAYER SUBSTRATE INCLUDING CERAMIC
An acoustic wave device is disclosed. The acoustic wave device includes a support layer, a ceramic layer positioned over the support layer, a piezoelectric layer positioned over the ceramic layer, and an interdigital transducer electrode positioned over the piezoelectric layer. The support layer has a higher thermal conductivity than the ceramic layer. The ceramic layer can be a polycrystalline spinel layer. The acoustic wave device can be a surface acoustic wave device configured to generate a surface acoustic wave.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 3/10 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface pour obtenir une fréquence ou un coefficient de température désiré
H03H 9/145 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
H03H 9/72 - Réseaux utilisant des ondes acoustiques de surface
H10N 30/072 - Formation de parties ou de corps piézo-électriques ou électrostrictifs sur un élément électrique ou sur un autre support par laminage ou collage de corps piézo-électriques ou électrostrictifs
A power amplifier can include at least one field effect transistor integrated within an associated transistor area. The transistor has transistor contacts with a contact configuration of cascoded contact fingers. The contact fingers include a source contact finger, a drain contact finger, a first gate contact finger provided between the source contact finger and the drain contact finger, and a second gate contact finger provided between the source contact finger and the drain contact finger.
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
34.
ACOUSTIC WAVE DEVICE WITH AN EFFICIENT STRUCTURE, A RADIO FREQUENCY MODULE, AND A MOBILE DEVICE INCLUDING THE SAME
Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, a pair of inter-digital transducer (IDT) electrodes formed on the substrate, each of the pair of IDT electrodes including a bus bar and a plurality of fingers extending from the bus bar, fingers of one IDT electrode arranged interleaved with fingers of the other IDT electrode, each of the bus bars of the pair of IDT electrodes having a slotted portion configured on an upper surface of the bus bars opposite to a lower surface contacting the substrate such that at least one hollow within each of the bus bars is opened at least at the upper surface of each of the bus bars, and a dielectric film covering the pair of IDT electrodes, at least a portion of the dielectric film filling in the at least one hollow of each of the bus bars.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
There is a presented a system for setting a noise transfer function comprising an input configured to receive an analog signal; a quantizer configured to quantize the analog signal to produce a digital signal; a preamplifier configured to adjust at least the amplitude the analog signal; and a resonator configured to adjust at least the amplitude of the analog signal, an output of the resonator being coupled to an output of the preamplifier, the system providing greater attenuation to the analog signal in a frequency band determined by the preamplifier and the resonator.
A radio frequency front end system can include a first module configured to provide multi-input multi-output (MIMO) receive operations for a first plurality of mid bands and a first plurality of high bands. The first module can be further configured to provide transmit operations for the plurality of mid bands. The first module can include a first node. The radio frequency front end system can include a second module configured to provide transmit and receive operations for a second plurality of mid bands and a second plurality of high bands. The second module can be a power amplifier integrated duplexer (PAiD) module. The second module can include a second node. The first module and the second module can be coupled by a signal path at the first node and the second node, respectively.
Methods related to power amplification systems with adjustable common base bias. A method of implementing a power amplification system can include providing a cascode amplifier coupled to a radio-frequency input signal and coupled to a radio-frequency output. The method can further include providing a biasing component configured to apply one or more biasing signals to the cascode amplifier, the biasing component including a bias controller and one or more bias components. Each respective bias component may be coupled to a respective bias transistor.
H03F 1/30 - Modifications des amplificateurs pour réduire l'influence des variations de la température ou de la tension d'alimentation
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/22 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de couplage dit "cascode", c. à d. étage avec cathode ou émetteur à la masse suivi d'un étage avec grille ou base à la masse respectivement
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
A method for processing audio signals is presented, wherein the method includes receiving a first audio signal including a background noise; receiving a second audio signal with a reduced signal level from the first audio signal; detecting a level difference between the first audio signal and the second audio signal in each of a plurality of predetermined frequency bands; estimating a signal-to-noise ratio (SNR) of the second audio signal for each of the plurality of frequency bands based on the detected level difference; and adjusting a mixing ratio of the first audio signal to the second audio signal based on the estimated SNR independently for each of the plurality of frequency bands to generate an output audio signal having a balanced SNR throughout the plurality of frequency bands.
Aspects of this disclosure relate to determining a transmission mode and a spectrum mode of a Convergent Digital Radio signal. The Convergent Digital Radio signal can be filtered by a plurality of filters. Correlation coefficients can be generated from the filtered signals, in which each correlation coefficient corresponds to a particular transmission mode and at least one particular spectrum mode. The transmission mode and the spectrum mode can be selected based on the correlation coefficients.
Biasing of radio frequency (RF) switches for hot switching is disclosed. In certain implementations, an RF switch includes a first series switching circuit connected between a first pole and a first throw and a second series switching circuit connected between the first pole and a second throw. Additionally, a control circuit controls the first series switching circuit with a first switch control signal and the second series switching circuit with a second switch control signal to provide a transition of the RF switch from a first state in which the first series switching circuit is turned on and second series switching circuit is turned off to a second state in which the first series switching circuit is turned off and the second series switching circuit is turned on. The control circuit turns on the second series switching circuit before turning off the first series switching circuit when providing the transition.
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04W 88/06 - Dispositifs terminaux adapté au fonctionnement dans des réseaux multiples, p.ex. terminaux multi-mode
Devices and methods for operating a charge pump. In some implementations, a charge pump module includes a clock circuit configured generate to a first clock signal and a second clock signal, the first clock signal having a lower frequency than the second clock signal. The charge pump module also includes a driving circuit configured to generate a first set of clock signals based on the first clock signal and a second set of clock signals based on the second clock signal, the driving circuit coupled to the clock circuit. The charge pump module further includes a charge pump core including a set of capacitances, the charge pump core configured to charge the set of capacitances based on the first set of clock signals and the second set of clock signals.
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p.ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
Multi-level envelope tracking systems are disclosed. In certain embodiments, a method of envelope tracking includes amplifying a radio frequency signal using a power amplifier, supplying power to the power amplifier using a power amplifier supply voltage, generating a plurality of delay-controlled regulated voltages based on controlling a delay of a plurality of regulated voltages using a controllable delay circuit, generating a modulator output voltage at a modulator output of a modulator, providing filtering using a first filter coupled between the modulator output and the power amplifier supply voltage, and controlling activation of a plurality of switches of the modulator based on an envelope of the radio frequency signal. The plurality of switches are each coupled between the modulator output and a corresponding one of the plurality of delay-controlled regulated voltages.
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
43.
HIGH QUALITY FACTOR SAW RESONATORS WITH SHARED REFLECTOR
Aspects and embodiments disclosed herein include an acoustic wave device comprising a first pair of IDT electrodes disposed on a substrate, fingers of the first pair of IDT electrodes separated by a first pitch distance from adjacent fingers, a second pair of IDT electrodes disposed on the substrate, fingers of the second pair of IDT electrodes separated by a second pitch distance from adjacent fingers, and a common reflector disposed between the first pair of IDT electrodes and the second pair of IDT electrodes, the common reflector including a plurality of fingers separated from each other by a third pitch distance, which is greater than the first pitch distance and is equal to or smaller than the second pitch distance.
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
H03H 9/145 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
Disclosed herein is a system comprising an ultrasonic bath, a first level sensor configured to provide a signal representative of an amount of liquid in the ultrasonic bath, and a controller configured to receive the signal from the first level sensor and automatically drain and empty the ultrasonic bath based on the signal as well as methods of operating same.
B08B 3/12 - Nettoyage impliquant le contact avec un liquide avec traitement supplémentaire du liquide ou de l'objet en cours de nettoyage, p.ex. par la chaleur, par l'électricité ou par des vibrations par des vibrations soniques ou ultrasoniques
45.
INCREASED DIELECTRIC FILM THICKNESS REFLECTOR IN A TEMPERATURE COMPENSATED SURFACE ACOUSTIC WAVE RESONATOR
Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, a pair of IDT electrodes formed on the substrate, fingers of one IDT electrode arranged interleaved with fingers of the other IDT electrode, reflectors formed on the substrate, one of the reflectors being adjacent to one side of the pair of IDT electrodes and another reflector being adjacent to the opposite side of the pair of IDT electrodes so as to interpose the pair of IDT electrodes therebetween, the reflectors and the pair of IDT electrodes arranged along a propagation direction of a main acoustic wave, and a dielectric film covering the pair of IDT electrodes and the reflectors, the dielectric film having a first thickness covering at least a portion of the reflectors, the dielectric film having a second thickness covering the pair of
Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, a pair of IDT electrodes formed on the substrate, fingers of one IDT electrode arranged interleaved with fingers of the other IDT electrode, reflectors formed on the substrate, one of the reflectors being adjacent to one side of the pair of IDT electrodes and another reflector being adjacent to the opposite side of the pair of IDT electrodes so as to interpose the pair of IDT electrodes therebetween, the reflectors and the pair of IDT electrodes arranged along a propagation direction of a main acoustic wave, and a dielectric film covering the pair of IDT electrodes and the reflectors, the dielectric film having a first thickness covering at least a portion of the reflectors, the dielectric film having a second thickness covering the pair of
IDT electrodes, the first thickness being different from the second thickness.
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
A shared-duplexer front end architecture is configured for operation in either of the 5G new radio n1 band or n65 band, while maintaining low spurious emissions in the adjacent n34 band. A front end module can have a first RF signal processing circuit for receiving RF signals from an antenna, and a second RF signal processing circuit for amplifying and transmitting RF signals via the antenna. The first RF signal processing circuit can be connected to the second RF signal processing circuit via a bypass filter circuit configured to short RF noise (particularly signal components within the n34 band) to the first RF signal processing circuit. The bypass filter circuit can be selectively enabled during transmission by the second RF signal processing circuit to effectively eliminate noise components of the RF signal and reduce spurious emissions in the n34 band.
In order to reduce errors in the transfer of time from one clock domain to another clock domain, a first free running counter is incremented using a first clock signal. A free running second counter is incremented using a second clock signal, the second clock signal being asynchronous to the first clock signal. The first counter is sampled at a selected time based on a predetermined phase relationship between the first clock signal and the second clock signal to generate a sampled first counter value. The second counter is corrected based on the sampled first counter value.
A computer-implemented method may determine a sheet resistance of a base layer of a bipolar junction transistor (BJT). A computer-implemented method may estimate a quiescent current based on the sheet resistance of the base layer. A computer-implemented method may reject a power amplifier die based on the quiescent current not satisfying a threshold level.
A radio frequency (RF) module comprising a plurality of input terminals configured to receive a plurality of RF signals from a transceiver, the RF signals being delivered through a plurality of narrowband carriers, a combiner, a power amplifier, a filter, and an output terminal. The combiner is configured to combine the plurality of RF signals into a combined RF signal in a broadband carrier. The power amplifier is configured to amplify the combined RF signal and to generate an amplified RF signal. The filter is configured to filter the amplified RF signal and to generate a filtered RF signal, and the output terminal is configured to output the filtered RF signal to an antenna.
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H04B 1/10 - Dispositifs associés au récepteur pour limiter ou supprimer le bruit et les interférences
50.
ACOUSTIC WAVE DEVICE WITH INTERDIGITAL TRANSDUCER ELECTRODE HAVING SEED LAYER
An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, and an interdigital transducer electrode formed with the piezoelectric layer. The interdigital transducer electrode includes a first layer, a second layer over the first layer, and a seed layer between the first layer and the piezoelectric layer. A combination of the first layer and the seed layer has a resistivity that is lower than a resistivity of the first layer alone.
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
51.
ERROR VECTOR MAGNITUDE EXCLUSION PERIOD FOR ESTABLISHING COMPLIANCE OF USER EQUIPMENT WITH A TRANSIENT PERIOD
Apparatus and methods for testing error vector magnitude (EVM) exclusion periods are disclosed. In certain embodiments, a method includes transmitting a first symbol with a first resource block allocation using a transmit chain of a mobile device and transmitting a second symbol with a second resource block allocation different than the first resource block allocation using the transmit chain, the first symbol and the second symbol having a power transient separated by a transient period. The method further includes establishing that the mobile device complies with a transient period specification based on obtaining a first error vector magnitude measurement and a second error vector magnitude measurement when the mobile device is transmitting a symbol sequence that includes the first symbol and the second symbol, the second error vector magnitude measurement delayed from the first error vector magnitude measurement by an error vector measurement exclusion period.
An acoustic wave device comprising a piezoelectric substrate with an interdigital transducer electrode disposed on the piezoelectric substrate and configured to excite an acoustic wave having a wavelength of λ. The device includes a temperature compensating layer disposed on the interdigital transducer electrode and having a dielectric material including a titanium compound.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
53.
ASYNCHRONOUS SUCCESSIVE APPROXIMATION REGISTER WITH ASYNCHRONOUS CLOCK CONTROL
A system for determining a variable delay provided to a pulse generator for a successive approximation register analog-to-digital converter (SAR ADC) is presented. The system comprises a delay loop coupled to the pulse generator, the delay loop having a variable delay circuit configured to provide the variable delay to the pulse generator, and an edge selector coupled to the delay loop, the edge selector being configured to determine the variable delay provided to the pulse generator.
H03L 7/099 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
H03L 7/183 - Synthèse de fréquence indirecte, c. à d. production d'une fréquence désirée parmi un certain nombre de fréquences prédéterminées en utilisant une boucle verrouillée en fréquence ou en phase en utilisant un diviseur de fréquence ou un compteur dans la boucle une différence de temps étant utilisée pour verrouiller la boucle, le compteur entre des nombres fixes ou le diviseur de fréquence divisant par un nombre fixe
H03M 1/46 - Valeur analogique comparée à des valeurs de référence uniquement séquentiellement, p.ex. du type à approximations successives avec convertisseur numérique/analogique pour fournir des valeurs de référence au convertisseur
54.
METHODS RELATED TO DUAL-SIDED MODULE WITH LAND-GRID ARRAY (LGA) FOOTPRINT
In some embodiments, a method for manufacturing packaged radio-frequency devices includes: providing a packaging substrate configured to receive a plurality of components, including a first side and a second side; mounting a first component on the first side of the packaging substrate; implementing a first overmold structure on the first side of the packaging substrate, substantially encapsulating the first component; mounting a second component on the second side of the packaging substrate, the second component being located in an area of the second side where one or more redundant pins, a redundant ground pad, or a redundant portion of a ground pad may be located; implementing a set of through-mold connections on the second side of the packaging substrate, the set of through-mold connections including signal pins and ground pins; and implementing a second overmold structure substantially encapsulating one or more of the component or the set of through-mold connections.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 23/498 - Connexions électriques sur des substrats isolants
Radio-frequency (RF) switching devices having improved voltage handling capability. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first voltage handling capacity that is greater than a second voltage handling capacity corresponding to a similar stack having a substantially uniform distribution of the parameter.
H01L 21/84 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant autre chose qu'un corps semi-conducteur, p.ex. étant un corps isolant
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H03K 17/081 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension sans réaction du circuit de sortie vers le circuit de commande
56.
MULTI-CHIP MULTI-CHANNEL BEAMFORMER MODULE WITH INTERPOSER PASSIVES
In some embodiments, a packaged module can include a packaging substrate having a plurality of interposer layers, and an array of transmit and/or receive elements implemented on a respective interposer layer, each transmit/receive element partitioned into a first block configured to provide high-performance functionality, and a second block configured to provide digitally-intensive low-performance functionality, the first and second blocks in combination configured to provide multi-channel beamforming functionality.
H01Q 3/36 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante faisant varier la phase par des moyens électriques avec des déphaseurs variables
H01L 25/10 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés
57.
FIELD-EFFECT TRANSISTORS WITH INTERLEAVED FINGER CONFIGURATION
The fabrication of field-effect transistor (FET) devices is described herein where the FET devices include one or more body contacts implemented between source, gate, drain (S/G/D) assemblies to improve the influence of a voltage applied at the body contact on the S/G/D assemblies. The FET devices can include source fingers and drain fingers interleaved with gate fingers. The source and drain fingers of a first S/G/D assembly can be electrically connected to the source and drain fingers of a second S/G/D assembly. The source fingers and the drain fingers can be arranged in alternating rows.
H01L 23/482 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes formées de couches conductrices inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 21/74 - Réalisation de régions profondes à haute concentration en impuretés, p.ex. couches collectrices profondes, connexions internes
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
A filter assembly operating at wider passband with an enhanced reflection coefficient is provided herein. In certain embodiments, the filter assembly comprises a first filter configured to allow signals received via an antenna node to pass at a first passband, the first filter including a plurality of resonators connected in series and parallel arms, the plurality of resonators of the first filter including a first type of resonator configured to broaden the first passband, at least a series resonator nearest to the antenna node or a shunt resonator nearest to the antenna node among the plurality of resonators of the first filter being a second type of resonator configured to improve reflection characteristics at a stopband of the first filter, and a second filter configured to allow the signals received via the antenna node to pass at a second passband using the second type of resonators.
Apparatus and methods for testing error vector magnitude (EVM) exclusion periods are disclosed. In certain embodiments, a method includes transmitting a radio frequency signal in fifth generation frequency range two using a transmit chain of a mobile device, the radio frequency signal including a symbol sequence that includes a first symbol and a second symbol having a power transient separated by a transient period. The method further includes establishing that the mobile device complies with a transient period specification based on obtaining a first EVM and a second EVM when the mobile device is transmitting the symbol sequence. The second EVM measurement is delayed from the first EVM measurement by an EVM exclusion period, and the first EVM measurement and the second EVM measurement are symmetrically shared across a symbol boundary between the first symbol and the second symbol.
In some embodiments, a method for operating a radio-frequency amplifier can include providing a bias signal to an amplifier implemented between an input node and an output node, and generating a detected voltage representative of a peak of a radio-frequency signal present at the input node. The method can further include enabling a protection mode when the detected voltage is greater than a first threshold value and disabling the protection mode when the detected voltage is less than a second threshold value that is less than the first threshold value.
H03F 1/52 - Circuits pour la protection de ces amplificateurs
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/22 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de couplage dit "cascode", c. à d. étage avec cathode ou émetteur à la masse suivi d'un étage avec grille ou base à la masse respectivement
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03F 3/72 - Amplificateurs commandés, c. à d. amplificateurs mis en service ou hors service au moyen d'un signal de commande
In some embodiments, a shielded assembly can include a substrate and a flip chip die having a front side and a back side, with the including an integrated circuit implemented on the front side, and the front side of the flip chip die being mounted to the substrate. The shielded assembly can further include a shielding component implemented over the back side of the flip chip die to provide electromagnetic shielding between a first region within or on the flip chip die and a second region away from the flip chip die.
H01L 23/552 - Protection contre les radiations, p.ex. la lumière
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
Aspects of this disclosure relate to a surface acoustic wave filter with an acoustic velocity adjustment structure. The surface acoustic wave filter can include a first interdigital transducer electrode disposed on a piezoelectric layer, an acoustic reflector disposed on the piezoelectric layer, and a second interdigital transducer electrode disposed on the piezoelectric layer. The second interdigital transducer electrode is longitudinally coupled to the first interdigital transducer electrode and positioned between the first interdigital transducer electrode and the acoustic reflector. The acoustic velocity adjustment structure can be positioned over at least a gap between the first interdigital transducer electrode and the second interdigital transducer electrode. The acoustic velocity adjustment structure can be arranged to increase an acoustic wave propagation velocity in a first region that includes the gap relative to a second region over at least a portion of the first interdigital transducer electrode.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03H 9/145 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
Packaged modules can be manufactured by providing or forming a substrate panel having first and second sides, and an array of units, and mounting one or more devices on the first side of the substrate panel for each unit. A first mold layer can be formed over the first side of the substrate panel to provide an assembly, with the first mold layer having an initial thickness that is greater than a final thickness, such that the initial thickness is sufficiently large to prevent warpage of the assembly where a similar assembly having a first mold layer with the final thickness would warp. One or more process operations can be performed on the second side of the substrate panel of the assembly, and a thinning operation can reduce the thickness of the first mold layer from the initial thickness to the final thickness.
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 23/552 - Protection contre les radiations, p.ex. la lumière
A radio frequency front end system has a first transmit path and a first receive path. There is a first transmit filter within the first transmit path and a first receive filter within the first receive path. One or more switches can be configured to selectively connect a first antenna to the first transmit filter and to selectively connect a second antenna to the first receive filter to allow frequency division duplex communication over the first transmit path and the first receive path in which the first transmit path transmits over the first antenna simultaneous with the first receive path receiving over the second antenna.
H04B 1/56 - Circuits utilisant la même fréquence pour la communication bilatérale avec possibilité de communication simultanée dans les deux directions
An amplifier system for radio frequency hot switching of a power amplifier can include a field-effect transistor, a forward biasing network, and a reverse biasing network. The forward biasing network is configured to provide a positive bias voltage to a gate terminal of the field-effect transistor, and the reverse biasing network is configured to provide a negative bias voltage to the gate terminal, with resistance of both biasing networks selected to independently control an on and off-switching time of the field-effect transistor. The independent on and off-switching time can allow for rapid “hot switching” in a connected power amplifier while the power amplifier is energized, while reducing spurious emissions of radio frequency signals by the power amplifier.
Laser-marked packaged surface acoustic wave devices are provided. The laser-marked packaged surface acoustic wave device may include a package structure encapsulating a surface acoustic wave device on a first side of a piezoelectric substrate. The opposite side of the piezoelectric substrate can be directly marked using a laser. The laser may be a deep ultraviolet laser. By directly marking the piezoelectric substrate itself, the use of a separate marking film can be avoided, making the packaged surface acoustic wave device thinner. When the laser has a wavelength readily absorbed by the piezoelectric substrate, a relatively shallow marking may be made in the piezoelectric substrate. The markings can extend less than 1 micrometer into the piezoelectric substrate, so as not to affect the structural integrity of the piezoelectric substrate or the operation of the packaged surface acoustic wave device.
H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
67.
MULTI-PATH FILTER FOR FILTERING RADIO FREQUENCY SIGNALS
Aspects of this disclosure relate to a multi-path filter for filtering a radio frequency signal. The multi-path filter includes a band pass section and an extractor section. The band pass section including a series acoustic wave resonator. The extractor section includes a second acoustic wave resonator and a phase shifter. The multi-path filter has a passband formed by at least a combined impedance response of the band pass section and the extractor section. The multi-path filter has a rejection band outside the passband that is formed by at least cancellation of impedance responses of the band pass section and the extractor section. Related multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.
Aspects of this disclosure relate to a multi-path filter for filtering a radio frequency signal. The multi-path filter includes two signal paths from a node to an output port. The first signal path includes a series acoustic wave resonator. The second signal path includes a shunt acoustic wave resonator and a phase shifter. Related multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.
Reconfigurable antenna systems with ground tuning pads are provided herein. In certain embodiments, a radio frequency module includes a module substrate including a first conductive layer and a second conductive layer separated by dielectric, an antenna element formed in the first conductive layer, a plurality of tuning conductors formed in the first conductive layer, a first ground tuning pad formed in the second conductive layer and receiving a ground voltage, and a first switch. The tuning conductors include a first tuning conductor spaced apart from the antenna element on a first side of the antenna element and a second tuning conductor spaced apart from the antenna element on a second side of the antenna element. The first switch is electrically connected between the first tuning conductor and the first ground tuning pad and selectively connects the first tuning conductor to the first ground tuning pad to tune the antenna element.
H01Q 9/28 - Antennes résonnantes avec alimentation intermédiaire entre les extrémités de l'antenne, p.ex. dipôle alimenté par le centre Éléments comportant deux surfaces coniques ayant le même axe et opposées par leurs sommets et alimentés par des lignes de transmission à deux conducteurs
H05K 1/16 - Circuits imprimés comprenant des composants électriques imprimés incorporés, p.ex. une résistance, un condensateur, une inductance imprimés
70.
TIMING SYNCHRONIZATION SYSTEM WITH ERROR MEASUREMENT
Clocking systems are disclosed. A clocking system can include first and second clock domains. Each clock domain can include circuitry with a counter. The clocking system can measure timing errors between these two domains by measuring a phase difference and determining a residual error. Based on the measured timing error, the clocking system can synchronize the time in the first and second clock domains by using at least one of the counters.
Clocking systems are disclosed. A clocking system can include first and second clock domains. Each clock domain can include circuitry with a counter. The clocking system can measure timing errors between these two domains by measuring a phase difference and determining a residual error. Based on the measured timing error, the clocking system can synchronize the time in the first and second clock domains by using at least one of the counters.
A circuit board processing system configured to process a panel, the system comprising a character recognition system configured to obtain a digital image of a character imprinted on a surface of the panel. The character recognition system is further configured to apply a fragmented search region to the digital image to obtain less than a whole of the character and apply image analysis to the less than a whole of the character; and to classify the character based on the image analysis.
A circuit board processing system configured to process a panel, the system comprising a character recognition system configured to obtain a digital image of a character imprinted on a surface of the panel. The character recognition system is further configured to perform image analysis on the digital image of the character, the image analysis including applying a local threshold value to one or more localities of the digital image to provide a binarized image of the character; and to classify the character based on the image analysis, the local threshold value applied to each locality of the one or more localities being based on pixel information around each respective locality.
Aspects and elements of this disclosure relate to a Front End Module comprising: an input; a filter; a noise cancellation circuit including a plurality of programmable taps that can be dynamically programmed to determine one or more frequency bands for which the noise cancellation circuit provides noise cancellation dependent upon whether the FEM is operating in a transmit mode of operation or a receive mode of operation, and further based on a proximity of the one or more frequency bands for which the noise cancellation circuit provides noise cancellation to a frequency band associated with the transmit mode of operation or the receive mode of operation; and a summing node coupled between the filter, noise cancellation circuit, and receive node, and configured to sum the output of the filter and the noise cancellation circuit.
A semiconductor wafer laser cutting lens plate holder comprising a first engagement portion and a second engagement portion. The first engagement portion opposes the second engagement portion such that they are configured to hold a lens plate by way of slidably engaging the lens plate with the first engagement portion and the second engagement portion.
Clocking systems are disclosed. A clocking system can include first and second clock domains. Each clock domain can include circuitry with a counter. The clocking system can measure timing errors between these two domains by measuring a phase difference and determining a residual error. Based on the measured timing error, the clocking system can synchronize the time in the first and second clock domains by using at least one of the counters.
A radio frequency module includes a filter having a first portion with a passband corresponding to a first receive frequency band and a second portion with a passband corresponding to at least a portion of a first transmit aggressor frequency band. A signal path is configured to couple between an antenna and the filter. The filter includes an antenna-side port coupled to the signal path. The module further includes a receive amplifier coupled to the first portion of the filter and a tunable termination impedance coupled to the second portion of the filter.
A radio frequency front end system includes a power amplifier and a variable driver stage coupled to the power amplifier. The variable driver stage applies a ramp profile to the power amplifier according to a Vramp control signal and is configured to apply a linear ramp by setting a gain to a fixed target value.
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
H03G 3/30 - Commande automatique dans des amplificateurs comportant des dispositifs semi-conducteurs
79.
RADIO FREQUENCY FRONT END ARCHITECTURE WITH RECEIVE FILTER BYPASS
A radio frequency front end system has a first receive path with a first receive filter and is configured to receive a first receive signal in a first band group from a first antenna. A first additional receive path is configured to receive a radio frequency signal from the first antenna unfiltered. A first switch is configured to couple the first antenna to either the first receive path or the first additional receive path to bypass the first receive filter.
A method of forming an acoustic wave device is disclosed. The method can include providing a piezoelectric layer, forming an interdigital transducer electrode with the piezoelectric layer, and selectively removing at least a portion of the interdigital transducer electrode. The interdigital transducer electrode includes a finger extending from a bus bar. The finger has a first region and a second region between the first region and the bus bar. The finger has a lower side, an upper side opposite the lower side, a sidewall between the lower side and the upper side, and a corner between the upper side and the sidewall. Selectively removing at least a portion of the interdigital transducer electrode includes selectively removing at least a portion of the second region of the finger such that the corner in the second region of the finger has a more rounded corner than the corner in the first region.
H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
H03H 9/145 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
81.
ACOUSTIC WAVE DEVICE WITH PARTIALLY ROUNDED INTERDIGITAL TRANSDUCER ELECTRODE
An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, and an interdigital transducer electrode formed with the piezoelectric layer. The interdigital transducer electrode includes a finger extending from a bus bar. The finger has a first region and a second region between the first region and the bus bar. The finger has a lower side, an upper side opposite the lower side, and a sidewall between the lower side and the upper side. A corner between the upper side and the sidewall is more rounded in the second region than in the first region.
H03H 9/145 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 3/08 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
82.
MULTILAYER PIEZOELECTRIC SUBSTRATE ACOUSTIC WAVE DEVICE WITH TRANSVERSE MODE SUPPRESSION
An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, and an interdigital transducer electrode formed with the piezoelectric layer. The interdigital transducer electrode includes a finger extending from a bus bar. The finger has a first region and a second region between the first region and the bus bar. The finger has a lower side and an upper side opposite the lower side. The lower side is closer to the piezoelectric layer than the upper side. Widths of the lower side in the first and second regions are generally the same, and a width of the upper side in the first region is greater than a width of the upper side in the second region.
Aspects of this disclosure relate to a multiplexer, such as a duplexer, a quadplexer, a hexaplexer, or the like. The multiplexer includes acoustic wave filters coupled to a common node. A first acoustic wave filter of the acoustic wave filters includes acoustic wave resonators of a first type and a series acoustic wave resonator of a second type coupled between the acoustic wave resonators of the first type and the common node.
H03H 9/70 - Réseaux à plusieurs accès pour connecter plusieurs sources ou charges, fonctionnant sur des fréquences ou dans des bandes de fréquence différentes, à une charge ou à une source commune
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
H03H 9/72 - Réseaux utilisant des ondes acoustiques de surface
H04L 5/00 - Dispositions destinées à permettre l'usage multiple de la voie de transmission
H04L 5/14 - Fonctionnement à double voie utilisant le même type de signal, c. à d. duplex
Charging and discharging circuits for assisting charge pumps are disclosed. In certain embodiments, a radio frequency (RF) switch system includes an RF switch that receives an RF signal and is controlled by a switch control signal received at an input, a first charge pump configured to generate a first charge pump voltage, a level shifter powered by the first charge pump voltage and that generates the switch control signal based on a switch enable signal, and a charge pump assistance switch coupled to the input of the radio frequency switch and that activates to assist the first charge pump in response to a transition of the switch enable signal from a first state to a second state.
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p.ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
H03F 3/24 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C d'étages transmetteurs de sortie
85.
SYSTEMS AND METHODS RELATED TO POWER AMPLIFICATION AND POWER SUPPLY CONTROL
Systems and methods related to power amplification and power supply control. A power amplification control system can include an interface configured to receive a transceiver control signal from a transceiver. The power amplification control system can include a power amplifier control component configured to generate a power amplifier control signal based on the transceiver control signal from the transceiver and a power supply control component configured to generate a power supply control signal based on the transceiver control signal from the transceiver and to generate the power supply control signal based on a local control signal from the power amplifier control component.
H03F 3/21 - Amplificateurs de puissance, p.ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
H03F 1/02 - Modifications des amplificateurs pour augmenter leur rendement, p.ex. étages classe A à pente glissante, utilisation d'une oscillation auxiliaire
H03F 1/56 - Modifications des impédances d'entrée ou de sortie, non prévues ailleurs
H03F 3/195 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs dans des circuits intégrés
A baseline difference is determined between a slave line card time stamp corresponding to a slave line card frame sync signal and a master line card time stamp corresponding to a master line card frame sync signal. The slave line card generates subsequent slave line card time stamps for subsequent slave line card frame sync signals and the master line card generates subsequent master line card time stamps for subsequent master line card frame sync signals. Current differences are determined between subsequent slave line card time stamps and the subsequent master line card time stamps and the current differences are compared to the baseline difference. When a mismatch difference occurs (current difference differs from the baseline difference), the mismatch difference causes a phase-locked loop in the master line card to be adjusted or an offset to be provided to the master line card time of day counter.
A radio frequency front end (RFFE) system including a first receive (Rx) path configured to concurrently pass Global Positioning System (GPS) band L1 (GPS-L1) and band 24 (B24). The first Rx path includes a first antenna, a first filter, a first low noise amplifier (LNA), and a second filter.
An acoustic wave device is disclosed. The acoustic wave device includes a support layer, a ceramic layer positioned over the support layer, a piezoelectric layer positioned over the ceramic layer, and an interdigital transducer electrode positioned over the piezoelectric layer. The support layer has a higher thermal conductivity than the ceramic layer. The ceramic layer can be a polycrystalline spinel layer. The acoustic wave device can be a surface acoustic wave device configured to generate a surface acoustic wave.
H03H 9/02 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails
H03H 3/10 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux utilisant des ondes acoustiques de surface pour obtenir une fréquence ou un coefficient de température désiré
H03H 9/145 - Moyens d'excitation, p.ex. électrodes, bobines pour réseaux utilisant des ondes acoustiques de surface
H03H 9/25 - Réseaux comprenant des éléments électromécaniques ou électro-acoustiques; Résonateurs électromécaniques - Détails de réalisation de résonateurs utilisant des ondes acoustiques de surface
H03H 9/64 - Filtres utilisant des ondes acoustiques de surface
H03H 9/72 - Réseaux utilisant des ondes acoustiques de surface
H10N 30/072 - Formation de parties ou de corps piézo-électriques ou électrostrictifs sur un élément électrique ou sur un autre support par laminage ou collage de corps piézo-électriques ou électrostrictifs
89.
FAST SWITCHING RADIO FREQUENCY SWITCH WITH REDUCED SPURS
A radio frequency (RF) switch and a method for controlling an RF switch is disclosed. An example RF switch comprises a switch field-effect transistor disposed between a first node and a second node, the switch field-effect transistor having a source, a drain, a gate, and a body; and a gate voltage control circuit having a voltage input, and a voltage output, the voltage output being coupled to the gate of the switch field-effect transistor, the gate voltage control circuit being configured to transition the state of the switch field-effect transistor between an ON state and an OFF state by changing the voltage supplied to the gate of the field-effect transistor in multiple steps.
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
H03K 3/011 - Modifications du générateur pour compenser les variations de valeurs physiques, p.ex. tension, température
90.
SYSTEMS AND METHODS FOR CANCELLING INTERMODULATION
A mobile device includes an antenna and a radio frequency front-end module coupled to the antenna. The module includes a first radio frequency circuit configured to transmit and receive over a first frequency division duplex communication band, and a second radio frequency circuit configured to transmit and receive over a second frequency division duplex communication band. A baseband processor can be configured to cause the first radio frequency circuit to transmit according to a duty cycle and analyze a signal received during the duty cycling by the first radio frequency circuit or by the second radio frequency circuit. Based on the analysis, the baseband processor can calculate intermodulation distortion between the first radio frequency circuit and the second radio frequency circuit.
This disclosure relates to a feedback loop circuit for an electrical signal. The feedback loop comprises a first branch having a first switch and a second switch, the first branch to receive an input signal and provide a first signal based on the input signal to a first adder and to provide a second signal based on the input signal to a second adder; and a second branch having a feedback line coupled between a third switch and the first adder, the second branch to provide an output signal based on the first signal and the second signal.
H03M 1/06 - Compensation ou prévention continue de l'influence indésirable de paramètres physiques
H03M 1/18 - Commande automatique pour modifier la plage des signaux que le convertisseur peut traiter, p.ex. réglage de la plage de gain
H03M 1/46 - Valeur analogique comparée à des valeurs de référence uniquement séquentiellement, p.ex. du type à approximations successives avec convertisseur numérique/analogique pour fournir des valeurs de référence au convertisseur
A multi-mode power amplifying apparatus has a power amplifier and an attenuator coupled to an input of the power amplifier. The power amplifying apparatus is adapted to operate in a plurality of operation modes and configured to amplify, in each operation mode, a radio frequency signal with an associated power amplifier gain. A tuning controller is configured to adjust a setting of the attenuator based on a current operation mode.
Apparatus and methods for electrically adjustable antenna stencils for controlling antenna pattern for beamforming are provided. In certain embodiments, a mobile device includes a front-end system including a plurality of radio frequency signal conditioning circuits, an antenna array including a plurality of electrically-adjustable stencils each connected to a corresponding one of the plurality of radio frequency signal conditioning circuits, and a control circuit configured to control the plurality of electrically-adjustable stencils to control an antenna pattern of the antenna array.
H01Q 1/36 - Forme structurale pour éléments rayonnants, p.ex. cône, spirale, parapluie
H04B 7/06 - Systèmes de diversité; Systèmes à plusieurs antennes, c. à d. émission ou réception utilisant plusieurs antennes utilisant plusieurs antennes indépendantes espacées à la station d'émission
94.
DEVICES AND METHODS RELATED TO SWITCH LINEARIZATION BY COMPENSATION OF A FIELD-EFFECT TRANSISTOR
A radio-frequency switch is disclosed, comprising a set of field-effect transistors disposed between a first node and a second node. In some embodiments, each field-effect transistor of the set of field-effect transistors has a respective source, drain, gate, and body. In some embodiments, the radio-frequency switch includes a compensation circuit coupled in parallel with the set of field-effect transistors, the compensation circuit configured to compensate a non-linearity effect generated by the set of field-effect transistors.
H01Q 3/24 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier l'orientation, par commutation de l'énergie fournie, d'un élément actif rayonnant à un autre, p.ex. pour commutation du lobe
H03K 17/14 - Modifications pour compenser les variations de valeurs physiques, p.ex. de la température
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p.ex. BIMOS, dispositifs composites tels que IGBT
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
H03K 17/693 - Dispositifs de commutation comportant plusieurs bornes d'entrée et de sortie, p.ex. multiplexeurs, distributeurs
H03K 17/74 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de diodes
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H04B 1/48 - Commutation transmission-réception dans des circuits pour connecter l'émetteur et le récepteur à une voie de transmission commune, p.ex. par l'énergie de l'émetteur
A method for controlling a high-power drive device includes providing a current having a first predetermined current level to an output node during a first phase of a multi-phase turn-on process for the high-power drive device coupled to the output node. The method includes transitioning from the first phase to a second phase of the multi-phase turn-on process based on a first indication of a sensed voltage level on the output node during the first phase and a second indication of a time elapsed from a start of the first phase during the first phase. The method includes providing the current having a second predetermined current level to the output node during the second phase.
H03K 3/012 - Modifications du générateur pour améliorer le temps de réponse ou pour diminuer la consommation d'énergie
H02P 27/06 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs
H02P 27/08 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs avec modulation de largeur d'impulsions
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p.ex. BIMOS, dispositifs composites tels que IGBT
96.
BULK ACOUSTIC WAVE FILTER CIRCUIT HAVING PHASE CANCELLING CIRCUIT
Aspects and examples provide improvement in the attenuation level near the passband within the stopband of the bandpass-type filter using a ladder-type circuit. In one example the ladder-type circuit is formed from bulk acoustic wave resonators. A loop circuit is connected between two distinct points on a signal path extending from an input to an output of the ladder-type circuit for phase-cancellation of signals at the two distinct points. The two distinct points may be the input and the output of the ladder-type circuit. The loop circuit may include a coupled bulk acoustic wave resonator.
A switching circuit comprises a radio frequency (RF) switch, a gate resistor, a voltage source, a transmission gate, and coupling circuitry configured to couple a gate of the RF switch, a first side of the gate resistor, and the transmission gate at a first node and the voltage source, a second side of the gate resistor, and the transmission gate at a second node.
H03K 17/693 - Dispositifs de commutation comportant plusieurs bornes d'entrée et de sortie, p.ex. multiplexeurs, distributeurs
H03K 17/0412 - Modifications pour accélérer la commutation sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande
H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
A spur measurement system uses a first device with a spur cancellation circuit that cancel spurs responsive to a frequency control word identifying a spurious tone of interest. A device under test generates a clock signal and supplies the clock signal to the first device through an optional divider. The spur cancellation circuit in the first device generates sine and cosine weights at the spurious tone of interest as part of the spur cancellation process. A first magnitude of the spurious tone in a phase-locked loop in the first device is determined according to the sine and cosine weights and a second magnitude of the spurious tone in the clock signal is determined by the first magnitude divided by gains associated with the first device.
H03L 7/093 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence y compris le filtrage ou l'amplification de son signal de sortie utilisant des caractéristiques de filtrage ou d'amplification particulières dans la boucle
G01R 29/26 - Mesure du coefficient de bruit; Mesure de rapport signal-bruit
Apparatus and methods for radio frequency (RF) switch control are provided. In certain embodiments, a level shifter for an RF switch includes a first level-shifting n-type transistor, a first cascode n-type transistor in series with the first level-shifting n-type transistor between a negative charge pump voltage and a first output that provides a first switch control signal, a first level-shifting p-type transistor, a first cascode p-type transistor in series with the first level-shifting p-type transistor between a positive charge pump voltage and the first output, and a second cascode p-type transistor between a regulated voltage and a gate of the first level-shifting n-type transistor and controlled by a first switch enable signal.
H04B 1/00 - TRANSMISSION - Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
G05F 3/16 - Régulation de la tension ou du courant là où la tension ou le courant sont continus utilisant des dispositifs non commandés à caractéristiques non linéaires consistant en des dispositifs à semi-conducteurs
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p.ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
A method includes adjusting a peaking frequency of a receiver signal path of a first integrated circuit die of the isolator product and a gain of the receiver signal path based on a predetermined peaking frequency, a predetermined gain, a first level of a diagnostic signal during a first interval, and a second level of the diagnostic signal during a second interval. The first interval and the second interval can be non-overlapping intervals.
brevets
