In an embodiment, a method includes: receiving a first plurality of digital codes from a TDC; generating a coarse histogram from the first plurality of digital codes; detecting a peak coarse bin from the plurality of coarse bins; after receiving the first plurality of digital codes, receiving a second plurality of digital codes from the TDC; and generating a fine histogram from the second plurality of digital codes based on the detected peak coarse bin, where a fine histogram depth range is narrower than a coarse histogram depth range, where a lower fine histogram depth is lower or equal to a lower coarse peak depth, and where a higher fine histogram depth is higher or equal to a higher coarse peak depth.
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 17/89 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour la cartographie ou l'imagerie
2.
METHOD FOR GATING AN OUTPUT OF A SINGLE PHOTON AVALANCHE DIODE (SPAD) CLUSTER BASED ON AN AMBIENT COUNT OF AMBIENT LIGHT EVENTS GENERATED BY THE SPAD CLUSTER IN A REGION OF INTEREST OF A TIME OF FLIGHT (TOF)
In an embodiments, a method for operating a time-of-flight (ToF) ranging array includes: illuminating a field-of-view (FoV) of the ToF ranging array with radiation pulses; receiving reflected radiation pulses with a plurality of single photon avalanche diodes (SPADs) in a region of interest (ROI) of the ToF ranging array, the plurality of SPADs arranged in a plurality of SPAD clusters; determining an ambient count of ambient light events generated by SPADs of a first SPAD cluster of the plurality of SPAD clusters; and gating an output of the first SPAD cluster based on the ambient count.
G01S 17/18 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues dans lesquels des fenêtres en distance sont utilisées
A system-on-a-chip (SOC) within a package includes a reference generator, a matching circuit, a programmable current generator, a PWM controller, an overvoltage/undervoltage detector receiving a high voltage from a third output pad, a multiplexer passing an input signal to a second output pad, and a SPAD receiving the high voltage. Switching circuitry includes a first switch between the reference generator and an input of the programmable current generator, a second switch between the input of the current generator and the output of the matching circuit, a third switch between the reference generator and an input of the matching circuit, a fourth switch between an output of the current generator and a tap of a ladder within the overvoltage/undervoltage detector, a fifth switch between an output of the current generator and the first output pad, and a sixth switch between the output of the PWM controller and the first output pad.
An optical ranging system includes: a first phase-locked loop (PLL) configured to generate a first frequency signal and a second frequency signal; a second PLL configured to generate a third frequency signal based on a control signal that is formed using the first frequency signal; an optical source coupled to the second PLL, where an intensity of an optical signal emitted by the optical source is configured to be modulated in accordance with the third frequency signal; a first single-photon avalanche diode (SPAD) configured to receive a reflected optical signal; a time-to-digital converter (TDC) coupled to the first SPAD, where the TDC is configured to generate digital samples by sampling an output signal of the first SPAD under control of the second frequency signal; a reference signal generator configured to generate a reference signal; and a mixer configured to mix the reference signal and the digital samples from the TDC.
G01S 7/4861 - Circuits pour la détection, d'échantillonnage, d'intégration ou de lecture des circuits
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H04N 25/70 - Architectures de capteurs SSIS; Circuits associés à ces dernières
An apparatus comprises an array of vertical-cavity surface-emitting lasers. Each of the vertical-cavity surface-emitting lasers is configured to be a source of light. The apparatus also comprises an optical arrangement configured to receive light from a plurality of the vertical-cavity surface-emitting lasers and to output a plurality of light beams.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
The present disclosure is directed to a device configured to act as a flood illuminator and a dot projector. The device utilizes a dual channel light source configured to switch between first and second polarizations, and a polarization sensitive metaoptic that outputs dot projection and flood illumination in response to receiving the first polarization and the second polarization, respectively.
G02B 5/30 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES Éléments optiques autres que les lentilles Éléments polarisants
F21V 5/08 - Réfracteurs pour sources lumineuses produisant une distribution de lumière asymétrique
F21V 9/14 - CARACTÉRISTIQUES FONCTIONNELLES OU DÉTAILS FONCTIONNELS DES DISPOSITIFS OU SYSTÈMES D'ÉCLAIRAGE; COMBINAISONS STRUCTURALES DE DISPOSITIFS D'ÉCLAIRAGE AVEC D'AUTRES OBJETS, NON PRÉVUES AILLEURS Éléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p.ex. filtres pour produire de la lumière polarisée
The present disclosure is directed to a three-dimensional interactive display system. The system detects a position of a user (e.g., the user's finger or hand) or an optical emitter device, along three different dimensions. In a case where the system detects a position of a user's finger, the user wears a passive device having angled surfaces on his or her finger to improve detection of the user's finger. In a case where the system detects the optical emitter device, the user holds the optical emitter device or wears the optical emitter device similar to the passive device. The optical emitter device emits light, and the system tracks the optical emitting device by detecting the light emitted by the optical emitter device.
An example method, to determine time of flight for light detection and ranging, includes enabling a time to digital converter; emitting a light pulse after enabling the time to digital converter; initiating a sampling window at a time of emission of the light pulse; using the time to digital converter to determine times of flight for photons detected during the sampling window; initiating a blanking period in response to concluding the sampling window; and disabling the time to digital converter in response to initiation of the blanking period.
G01S 7/4861 - Circuits pour la détection, d'échantillonnage, d'intégration ou de lecture des circuits
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G04F 10/00 - Appareils pour mesurer des intervalles de temps inconnus par des moyens électriques
10.
METHOD AND APPARATUS FOR PROCESSING A HISTOGRAM OUTPUT FROM A DETECTOR SENSOR
A method includes receiving a histogram output from a detector sensor, and calculating a median point of a pulse waveform within the histogram. The pulse waveform has an even probability distribution over at least one quantization step of the histogram around the median point. A corresponding apparatus can include a detector sensor and a co-processor coupled to the detector sensor.
G06F 17/18 - Opérations mathématiques complexes pour l'évaluation de données statistiques
G01S 7/4863 - Réseaux des détecteurs, p.ex. portes de transfert de charge
G06F 11/07 - Réaction à l'apparition d'un défaut, p.ex. tolérance de certains défauts
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 7/487 - Extraction des signaux d'écho désirés
A differential correlator filter includes: a pre-pulse region, where first filter coefficients in the pre-pulse region have negative values; and a pulse region including: a rising edge region adjacent to the pre-pulse region, where second filter coefficients in the rising edge region have positive values; an accumulation region adjacent to the rising edge region, where third filter coefficients of the accumulation region have positive values; and a falling edge region adjacent to the accumulation region, where fourth filter coefficients of the falling edge region have positive values, where the accumulation region is between the rising edge region and the falling edge region. The differential correlator filter further includes a post-pulse region adjacent to the pulse region, where the pulse region is between the pre-pulse region and the post-pulse region, where fifth filter coefficients of the post-pulse region have negative values.
A device includes a single photon avalanche diode in a portion of a substrate, wherein the portion has an octagonal profile. The octagonal profile is delimited by a wall forming an octagonal contour around the portion. The device further includes an array of diodes, wherein each diode is located in a corner between four adjacent single photon avalanche diodes. Each single photon avalanche diode further includes a doped anode region. A shallow trench isolation is formed in each doped anode region. A polysilicon line forming a resistor is supported at the upper surface of the shallow trench isolation.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
13.
OPTICAL SENSOR AND APPARATUS COMPRISING AN OPTICAL SENSOR
An optical sensor includes pixels. Each pixel has a photodetector. A readout circuit performs a process over an exposure time where the photodetector is connected to a reverse bias voltage supply to reset a voltage across the photodetector, and the photodetector is disconnected from the reverse bias voltage supply until that the voltage across the photodetector decreases in response to received ambient light. An ambient light level is then determine an based on a number of times the voltage across the photodetector is reset over the exposure time.
H01L 23/58 - Dispositions électriques structurelles non prévues ailleurs pour dispositifs semi-conducteurs
H01L 27/144 - Dispositifs commandés par rayonnement
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
A device includes a single photon avalanche diode in a substrate and a resistor. The resistor is provided resting on an insulating trench located in a doped anode region of the single photon avalanche diode.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
A method includes dividing a field of view into a plurality of zones and sampling the field of view to generate a photon count for each zone of the plurality of zones, identifying a focal sector of the field of view and analyzing each zone to select a final focal object from a first prospective focal object and a second prospective focal object.
An optical element is positioned in a holder over a laser light source. The optical element includes an electrical trace that is coupled between first and second pads. A sensing circuit that is also coupled to the first and second pads performs a voltage/current sensing operation to detect displacement of the optical element and control enablement of the laser light source.
This disclosure relates to a time-of-flight sensor including, on a same base substrate, a light emitter configured to emit light into an image scene, a reference sensor configured to detect light emitted by the light emitter, and a signal reception sensor array separated from the light emitter by an optical barrier. The optical barrier is configured to prevent light emitted by the light emitter from directly reaching the signal reception sensor array, with the signal reception sensor array being configured to detect light reflected by the image scene. The reference sensor and the signal reception sensor array are based on semiconductor nanoparticles.
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
G01S 7/4863 - Réseaux des détecteurs, p.ex. portes de transfert de charge
G01S 7/499 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe utilisant des effets de polarisation
18.
QUANTUM FILM DIRECT TIME OF FLIGHT SENSOR CIRCUIT FOR LOW COST SHORT WAVE INFRARED OPERATION
A time-of-flight system includes an emitter-circuit generating and directing pulses of light toward a target, and a receiver-circuit including a photodetector coupled between a bias node and a sensing node to detect pulses that have reflected off the target, a comparison circuit comparing a sense voltage at the sensing node to a reference, a timing measurement circuit measuring elapsed time between generation of a given pulse and detection thereof after reflection off the target, and a programmable current sink that sinks a current from the sensing node equal to a portion of a photocurrent generated by the photodetector due to detection of ambient light. A timing-generation circuit synchronizes generation of the pulses and measurement of elapsed time by the timing circuit. A processor adjusts a magnitude of the current sunk from the sensing node based upon output of the comparison circuit when the emitter circuit is deactivated.
An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
Various embodiments provide an optical lens that includes wafer level diffractive microstructures. In one embodiment, the optical lens includes a substrate, a microstructure layer having a first refractive index, and a protective layer having a second refractive index that is different from the first refractive index. The microstructure layer is formed on the substrate and includes a plurality of diffractive microstructures. The protective layer is formed on the diffractive microstructures. The protective layer provides a cleanable surface and encapsulates the diffractive microstructures to prevent damage and contamination to the diffractive microstructures. In another embodiment, the optical lens includes a substrate and an anti-reflective layer. The anti-reflective layer is formed on the substrate and includes a plurality of diffractive microstructures.
An input stage circuit for a sigma-delta analog-to-digital converter circuit receives a digital-to-analog converter generated feedback signal and an analog current input signal to generate a difference signal applied to an integrator circuit. A single bit quantization circuit quantizes an output of the integrator circuit to generate a bit signal that is applied to an input of the digital-to-analog converter. The input stage circuit includes a switched input capacitor controlled by first and second, non-overlapping, clock signals.
In a method, substrate elements are provided wherein each substrate element has a first side and a second side meeting at a corner point. The substrate elements are picked and then placed on a support device in alignment. A cutting operation is then performed where each of the substrates elements are cut along a cut line having a common first direction which intersects the first and second sides of each of the substrate elements in order to create a third side on each substrate element. The third side of each of the substrate elements meets the first and the second sides at corresponding corner points.
B28D 5/00 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p.ex. des matériaux pour semi-conducteurs; Appareillages ou dispositifs à cet effet
B28D 5/04 - Travail mécanique des pierres fines, pierres précieuses, cristaux, p.ex. des matériaux pour semi-conducteurs; Appareillages ou dispositifs à cet effet par outils autres que ceux du type rotatif, p.ex. par des outils animés d'un mouvement alternatif
23.
METHODS AND DEVICES FOR IDENTIFYING PEAKS IN HISTOGRAMS
A single-pass method for identifying peaks in a time of flight histogram, the single-pass method including conducting an ordered comparison of each bin with an adaptive threshold until finding a bin that exceeds the adaptive threshold; enabling peak tracking in response to finding the bin that exceeds the adaptive threshold; in response to enabling peak tracking, continuing the ordered comparison of each bin with the adaptive threshold until finding a bin that falls below the adaptive threshold; and in response to finding the bin that falls below the adaptive threshold, marking a peak location between the bin exceeding the adaptive threshold and the bin that falls below the adaptive threshold.
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 7/48 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
24.
FLUIDIC EJECTION DEVICE WITH OPTICAL BLOCKAGE DETECTOR
The present disclosure is directed to a fluidic ejection device configured to detect whether one or more nozzles of the fluidic ejection device is in a normal state, a blocked nozzle state, or an accumulated fluid state. The fluidic ejection device includes an optical blockage detector having a light emitting device configured to emit a light signal, and a light sensor configured to detect the light signal. The optical blockage detector detects the normal state, the blocked nozzle state, and the accumulated fluid state based on the detected light signal.
A system to sample light including an array of light-sensitive pixels and a content display. The content display includes an array of content-display pixels; and an array of masking pixels individually selectable to switch between an opaque state and a transparent state, the array of masking pixels being aligned with the array of light-sensitive pixels so light-sensitive pixels may be selected to receive light passing through the content display by selecting the states of the array of masking pixels.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 17/931 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour prévenir les collisions de véhicules terrestres
G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p.ex. caméras à temps de vol ou lidar flash
The present disclosure relates to a secondary device comprising a first port receiving a clock signal from a first port of a primary device and a second port connected to a second port of the primary device. The clock signal determines, for each bit transmission, first, second, third and fourth successive phases. The secondary device puts its second port in a high impedance state during the first, second and fourth phases of each bit transmission. During the third phase of each transmission of a bit of data from the secondary device to the primary device, the secondary device discharges its second port when the transmitted bit has a first value and leaves its second port in a high impedance state when the transmitted bit has a second value.
An electronic device includes a carrier substrate having a front face. An electronic chip is mounted on the front face of the carrier substrate and includes an optical component. An encapsulation cover is mounted on top of the front face of the carrier substrate and bounds a chamber within which the chip is situated. A front opening extends through the cover and is situated in front of the optical component. An optical element, designed to allow light to pass, is mounted within the chamber at a position which covers the front opening of the encapsulation cover. The optical element includes a central region designed to deviate the light and having an optical axis aligned with the front opening and the optical component. A positioning pattern is provided on the optical element to assist with mounting the optical element to the cover and mounting the cover to the carrier substrate.
G02B 7/00 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques
H01L 31/0232 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails Éléments ou dispositions optiques associés au dispositif
In accordance with an embodiment, a system includes: a primary device configured to be connected to at least one secondary device via serial bus having a data wire and a clock wire. The primary device is configured to: provide a clock signal on the clock wire; and transmit a frame comprising control bits on the serial bus, wherein a number of control bits transmitted on the serial bus at at least one location of the frame indicates a format of the frame.
An imaging device includes a sensor array with a number of pixels. In an embodiment, the imaging device can be operated by capturing a first low-spatial resolution frame using a subset of pixels of the sensor array and then capturing a second low-spatial resolution frame using the same subset of pixels of the sensor array. A first depth map is generated using raw pixel values of the first low-spatial resolution frame and a second depth map is generated using raw pixel values of the second low-spatial resolution frame. The first depth map can be compared to the second depth map to determine whether an object has moved in a field of view of the imaging device.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
G06T 7/579 - Récupération de la profondeur ou de la forme à partir de plusieurs images à partir du mouvement
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H04N 25/77 - Circuits de pixels, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
30.
ASSEMBLY COMPRISING A DISPLAY SCREEN AND A PROXIMITY SENSOR
The present disclosure relates to an assembly for an electronic device, the assembly comprising: a display screen comprising a plurality of pixels arranged in a matrix scheme comprising rows orientated in a first direction and columns orientated in a second direction; and a proximity sensor comprising at least one optical light emitter, each adapted to emit a light beam through one or more first pixels of the display screen, and an optical detector adapted to receive through one or more second pixels of the display screen the light beam emitted by the at least one optical light emitter and reflected on an object; wherein none of the one or more second pixels is in the same row as any of the one or more first pixels, and none of the one or more second pixels is in the same column as any of the one or more first pixels.
A method for enhancing an image and an image enhancement device are described. The method for enhancing an image including: capturing an initial image including a plurality of pixels, and performing a pixel-by-pixel dehazing operation for each of the plurality of pixels. The performing including: generating, for each of the plurality of pixels, a value for a blended gray image based on color channels of the pixel, generating, for each of the plurality of pixels, a value for a transmission map based on the blended gray image, and generating, for each of the plurality of pixels, output color channels for a processed image based on the value for the transmission map, the processed image being an enhancement of the initial image.
H04N 23/71 - Circuits d'évaluation de la variation de luminosité
G06T 5/50 - Amélioration ou restauration d'image en utilisant plusieurs images, p.ex. moyenne, soustraction
H04N 9/64 - Circuits pour le traitement de signaux de couleur
H04N 9/77 - Circuits pour le traitement l'un par rapport à l'autre des signaux de luminance et de chrominance, p.ex. ajustement de la phase du signal de luminance par rapport au signal de couleur, correction différentielle du gain ou de la phase
An apparatus comprises an array of vertical-cavity surface-emitting lasers. Each of the vertical-cavity surface-emitting lasers is configured to be a source of light. The apparatus also comprises an optical arrangement configured to receive light from a plurality of the vertical-cavity surface-emitting lasers and to output a plurality of light beams.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
An embodiment method of measuring ambient light comprises generating, by an ambient light sensor associated with a screen which alternates between first phases in which light is emitted and second phases in which no light is emitted by the screen, a first signal representative of an intensity of light received by the ambient light sensor during the first and second phases; comparing the first signal with a threshold intensity value; and controlling a timing of an ambient light measurement by the light sensor based on the comparison.
G09G 3/3225 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active
A method includes dividing a field of view into a plurality of zones and sampling the field of view to generate a photon count for each zone of the plurality of zones, identifying a focal sector of the field of view and analyzing each zone to select a final focal object from a first prospective focal object and a second prospective focal object.
A sensing pixel includes a single photon avalanche diode (SPAD) coupled between a first node and a second node, with a clamp diode being coupled between a turn-off voltage node and the second node. A turn-off circuit includes a sense circuit configured to generate a feedback voltage based upon a voltage at the turn-off voltage node, a transistor having a first conduction terminal coupled to the turn-off voltage node, a second conduction terminal coupled to ground, and a control terminal, and an amplifier having a first input coupled to a reference voltage, a second input coupled to receive the feedback voltage, and an output coupled to the control terminal of the transistor. A readout circuit is coupled to the SPAD by a decoupling capacitor.
An imaging sensor includes a pixel array containing photodiodes, the photodiodes being isolated from one another by full thickness deep trench isolations. Row control circuitry controls which rows of the pixel array operate in an imaging mode and which rows of the pixel array operate in an energy harvesting mode, on a row-by-row basis. Switch circuitry selectively connects different groups of photodiodes in rows operating in the energy harvesting mode into forward biased series configurations between a voltage output line and a ground line, or into forward biased parallel configurations between the voltage output line and the ground line. In the forward biased series configurations, the cathode of at least one photodiode of a given group of photodiodes is directly electrically connected to ground.
Method for gating an output of a single photon avalanche diode (SPAD) cluster based on an ambient count of ambient light events generated by the SPAD cluster in a region of interest of a time of flight (TOF) ranging array
In an embodiments, a method for operating a time-of-flight (ToF) ranging array includes: illuminating a field-of-view (FoV) of the ToF ranging array with radiation pulses; receiving reflected radiation pulses with a plurality of single photon avalanche diodes (SPADs) in a region of interest (ROI) of the ToF ranging array, the plurality of SPADs arranged in a plurality of SPAD clusters; determining an ambient count of ambient light events generated by SPADs of a first SPAD cluster of the plurality of SPAD clusters; and gating an output of the first SPAD cluster based on the ambient count.
G01S 17/18 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues dans lesquels des fenêtres en distance sont utilisées
Described herein is an electronic device, including a pixel and a turn-off circuit. The pixel includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage node and an anode selectively coupled to ground through an enable circuit, and a clamp diode having an anode coupled to the anode of the SPAD and a cathode coupled to a turn-off voltage node. The turn-off circuit includes a sense circuit coupled between the turn-off voltage node and ground and configured to generate a feedback voltage, and a regulation circuit configured to sink current from the turn-off voltage node to ground based upon the feedback voltage such that a voltage at the turn-off voltage node maintains generally constant.
In an embodiment, a method includes: resetting respective count values of a plurality of analog counters to an initial count value, each analog counter of the plurality of analog counters corresponding to a histogram bin of a time-of-flight (ToF) histogram; after resetting the respective count values, receiving a plurality of digital addresses from a time-to-digital converter (TDC); during an integration period, for each received digital address, selecting one analog counter based on the received digital address, and changing the respective count value of the selected one analog counter towards a second count value by a discrete amount, where each analog counter has a final count value at an end of the integration period; and after the integration period, determining an associated final bin count of each histogram bin of the ToF histogram based on the final count value of the corresponding analog counter.
The present disclosure relates to an assembly for an electronic device comprising: a display screen; an optical light emitter adapted to emit an Infrared or near Infrared light beam through the display screen; the optical light emitter and the display screen being of the type that, when an unpolarized light beam from the optical light emitter passes through a region of the display screen, a white spot of a first intensity is formed in the region; a light polarizer positioned between the optical light emitter and the display screen, the light polarizer being orientated such that a white spot of a second intensity, lower than the first intensity, is formed when the light beam, from the optical light emitter and polarized by the light polarizer, passes through the region of the display screen.
A photonic device includes a PCB having an integrated circuit mounted thereon, with a cap mounted to the PCB and carrying a lens positioned over the integrated circuit. The cap is formed by: an outer wall mounted to the PCB, extending upwardly from the PCB, and surrounding a portion of the integrated circuit; a first retention structure extending inwardly from the outer wall and across the integrated circuit, the first retention structure having a hole defined therein; and a second retention structure having a hole defined therein, the second retention structure being affixed within the first retention structure such that the hole in the second retention structure is axially aligned with the hole in the first retention structure. The lens is mechanically constrained within the cap between the first retention structure and the second retention structure.
G02B 6/12 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES - Détails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p.ex. des moyens de couplage du type guide d'ondes optiques du genre à circuit intégré
A ToF sensor includes an array of pixels having first and second subsets of pixels, first and second pluralities of TDCs, a routing bus having first and second pluralities of bus drivers, and a controller configured to: when the first subset of pixels is active and the second subset of pixels is not active, control the first plurality of bus drivers to route events from half of the pixels of the first subset to the first plurality of TDCs and control the first and second pluralities of bus drivers to route events from the other half of the pixels of the first subset to the second plurality of TDCs, and when the first subset of pixels is not active and the second subset of pixels is active, control the first plurality of bus drivers to route events from the second subset of pixels to the first plurality of TDCs.
The present disclosure relates to a sensor having pixels, each pixel having photodiodes having each a terminal coupled to a first node associated with the photodiode; and an amplifier having a first part and, for each photodiode, a second part associated with the photodiode. The first part includes an output of the amplifier and a first MOS transistor of a differential pair. Each second part includes a second MOS transistor of the differential pair having its gate coupled to the first node associated with the photodiode the second part is associated with; a first switch coupling a source of the second transistor to the first part of the amplifier; and a second switch coupling a drain of the second transistor to the first part of the amplifier.
An optical sensor includes at least one photodetector configured to be reverse biased at a voltage exceeding a breakdown voltage by an excess bias voltage. At least one control unit is configured to adjust the reverse bias of the at least one photodetector. A method of operating an optical sensor is also disclosed.
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
45.
EMBEDDED TRANSMISSIVE DIFFRACTIVE OPTICAL ELEMENTS
Various embodiments provide optical lenses that include phase shift layers that transmit incident light with four or more distinct phase quantizations. In one embodiment, a lens includes a substrate, a first immersion material layer on the substrate, and a plurality of anti-reflective phase shift layers on the first immersion material layer. The phase shift layers define a first anti-reflective phase shift region that transmits received light without a phase shift, a second anti-reflective phase shift region configured to transmit the received light with a first phase shift, a third anti-reflective phase shift region configured to transmit the received light with a second phase shift, and a fourth anti-reflective phase shift region configured to transmit the received light with a third phase shift. The first, second, and third phase shifts are different from one another.
A lens is positioned to be received by a lens holder. The lens includes a first electrical trace and the lens holder includes a second electrical trace. The first and second electrical traces form electrodes of a sense capacitor. A capacitance of the sense capacitor is sensed. From the sensed capacitance, a determination is made as to whether the lens is present and properly positioned in the lens holder.
G02B 7/10 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles avec mécanisme de mise au point ou pour faire varier le grossissement par déplacement axial relatif de plusieurs lentilles, p.ex. lentilles d'objectif à distance focale variable
G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
Disclosed herein is an array of pixels. Each pixel includes a single photon avalanche diode (SPAD) and a transistor circuit. The transistor circuit includes a clamp transistor configured to clamp an anode voltage of the SPAD to be no more than a threshold clamped anode voltage, and a quenching element in series with the clamp transistor and configured to quench the anode voltage of the SPAD when the SPAD is struck by an incoming photon. Readout circuitry is coupled to receive the clamped anode voltage from the transistor circuit and to generate a pixel output therefrom, the threshold clamped anode voltage being below a maximum voltage rating of transistors forming the readout circuitry.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
A laser diode driver circuit includes a first pair of contacts and connectors coupled to an anode of the laser diode. An inductance of each of the first pair of contacts and connectors is the same. A second pair of contacts and connectors are coupled to a cathode of the laser diode. An inductance of each of the second pair of contacts and connectors is the same. The laser diode driver circuit also includes current driving circuitry.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
An indirect time of flight sensor includes a matrix of pixels, wherein each pixel includes at least two controllable transfer devices. First conductive lines transmit first control signals to the transfer devices, these first signals being provided by a first circuit. A device is provided for illuminating a scene that is divided into at least two first areas. The device successively illuminates each first area. The matrix is similarly divided into at least two second areas. The matrix and illumination device are disposed such that each first area corresponds to one second area. The first circuit provides different first signals to the different second areas.
A method includes measuring a first set of photon-event data collected from a first crosstalk-monitoring zone of an optical receiver during a first period of time of flight ranging, measuring a second set of photon-event data collected from a second crosstalk-monitoring zone of the optical receiver during the first period of time of flight ranging, and generating a first dynamic crosstalk compensation value for a first histogram region of the optical receiver using the first set of photon-event data, the second set of photon-event data, and a native crosstalk compensation value for the first histogram region of the optical receiver.
G01S 7/48 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
In certain embodiments, a method includes accessing image information for a scene in a movement path of a mobile robot. The image includes image information for each of a plurality of pixels of the scene, the image information comprising respective intensity values and respective distance values. The method includes analyzing the image information to determine whether to modify the movement path of the mobile robot. The method includes initiating, in response to determining according to the image information to modify the movement path of the mobile robot, sending of a command to a drive subsystem of the mobile robot to modify the movement path of the mobile robot.
B25J 13/08 - Commandes pour manipulateurs au moyens de dispositifs sensibles, p.ex. à la vue ou au toucher
G05D 1/00 - Commande de la position, du cap, de l'altitude ou de l'attitude des véhicules terrestres, aquatiques, aériens ou spatiaux, p.ex. pilote automatique
52.
COMPACT LINE SCAN MEMS TIME OF FLIGHT SYSTEM WITH ACTUATED LENS
Disclosed herein is an optical module including a substrate, with an optical detector, laser emitter, and support structure being carried by the substrate. An optical layer includes a fixed portion carried by the support structure, a movable portion affixed between opposite sides of the fixed portion by a spring structure, and a lens system carried by the movable portion. The movable portion has at least one opening defined therein across which the lens system extends, with at least one supporting portion extending across the at least one opening to support the lens system. The optical layer further includes a MEMS actuator for in-plane movement of the movable portion with respect to the fixed portion.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
B81B 3/00 - Dispositifs comportant des éléments flexibles ou déformables, p.ex. comportant des membranes ou des lamelles élastiques
53.
Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method
A single photon avalanche diode (SPAD) includes a PN junction in a semiconductor well doped with a first type of dopant. The PN junction is formed between a first region doped with the first type of dopant and a second region doped with a second type of dopant opposite to the first type of dopant. The first doped region is shaped so as to incorporate local variations in concentration of dopants that are configured, in response to a voltage between the second doped region and the semiconductor well that is greater than or equal to a level of a breakdown voltage of the PN junction, to generate a monotonic variation in the electrostatic potential between the first doped region and the semiconductor well.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
STMicroelectromics (Research & Development ) Limited (Royaume‑Uni)
Inventeur(s)
Hearn, Brent Edward
Munko, Marek Jan
Abrégé
A method implemented by a first time of flight (ToF) sensor includes generating, by the first ToF sensor, a first depth map in accordance with measurements of reflections of an optical signal emitted by the first ToF sensor; communicating, by the first sensor with a second ToF sensor, the first depth map and a second depth map, the second depth map generated by the second ToF sensor; and determining, by the first ToF sensor, a relative location of the first ToF sensor relative to the second ToF sensor in accordance with the first depth map and the second depth map.
An optical module includes an optical detector, laser emitter, and first and second support structures, each carried by a substrate. An optical layer includes first and second fixed portions carried by the support structures, a movable portion affixed between the fixed portions by a spring structure, and a lens system carried by the movable portion, the lens system including an objective lens and a beam shaping lens. The optical layer includes a comb drive with a first comb structure extending from the first fixed portion to interdigitate with a second comb structure extending from the movable portion, a third comb structure extending from the second fixed portion to interdigitate with a fourth comb structure extending from the movable portion, and actuation circuitry applying voltages to the comb structures to cause the movable portion of the optical layer to oscillate back and forth between the fixed portions.
G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p.ex. caméras à temps de vol ou lidar flash
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
56.
METHOD FOR MEASURING AMBIENT LIGHT AND CORRESPONDING INTEGRATED DEVICE
In an embodiment a method for measuring ambient light includes successively synchronizing optical signal acquisition phases with extinction phases of a disruptive light source, wherein the disruptive light source periodically provides illumination phases and the extinction phases, accumulating, in each acquisition phase, photo-generated charges by at least one photosensitive pixel comprising a pinned photodiode, wherein an area of the pinned photodiode is less than or equal to 1/10 of an area of the at least one photosensitive pixel, transferring, for each pixel, the accumulated photo-generated charges to a sensing node, converting, for each pixel, the transferred charges to a voltage at a voltage node and converting, for each pixel, the transferred charges to a digital number
G09G 3/3225 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active
A system and method for a scalable depth sensor. The scalable depth sensor having an emitter, a receiver, and a processor. The emitter is configured to uniformly illuminate a scene within a field-of-view of the emitter. The receiver including a plurality of detectors, each detector configured to capture depth and intensity information corresponding to a subset of the field-of-view. The a processor connected to the detector and configured to selectively sample a subset of the plurality of the detectors in accordance with compressive sensing techniques, and provide an image in accordance with an output from the subset of the plurality of the detectors, the image providing a depth and intensity image corresponding to the field-of-view of the emitter.
G06K 9/00 - Méthodes ou dispositions pour la lecture ou la reconnaissance de caractères imprimés ou écrits ou pour la reconnaissance de formes, p.ex. d'empreintes digitales
G06T 7/50 - Récupération de la profondeur ou de la forme
G01S 7/483 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe - Détails de systèmes à impulsions
G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p.ex. caméras à temps de vol ou lidar flash
An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H04N 25/70 - Architectures de capteurs SSIS; Circuits associés à ces dernières
The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.
A method for detecting an orientation of a screen of a device includes having a two-dimensional (2D) detector array affixed to the device in a fixed orientation relative to the screen, where the 2D detector array includes a sensing area with a plurality of pixels; imaging a scene including a user in a foreground and a background onto the 2D detector array; extracting an information of the scene for each of the plurality of pixels of the sensing area, the information being extracted from the 2D detector array by an image sensor; identifying an asymmetry in a pixelated image of the scene that includes the information of the scene for each of the plurality of pixels of the sensing area; and based on the asymmetry in the image of the scene, determining the orientation of the screen relative to the user.
G09G 5/32 - Dispositions ou circuits de commande de l'affichage communs à l'affichage utilisant des tubes à rayons cathodiques et à l'affichage utilisant d'autres moyens de visualisation caractérisés par l'affichage de caractères ou de signes individuels en utilisant des signaux de commande d'affichage dérivés de signaux codés représentant les caractères ou les signes avec une mémoire de codes de caractères avec des moyens pour commander la position de l'affichage
G06F 1/16 - TRAITEMENT ÉLECTRIQUE DE DONNÉES NUMÉRIQUES - Détails non couverts par les groupes et - Détails ou dispositions de structure
G06T 7/70 - Détermination de la position ou de l'orientation des objets ou des caméras
Various embodiments provide an optical lens that includes wafer level diffractive microstructures. In one embodiment, the optical lens includes a substrate, a microstructure layer having a first refractive index, and a protective layer having a second refractive index that is different from the first refractive index. The microstructure layer is formed on the substrate and includes a plurality of diffractive microstructures. The protective layer is formed on the diffractive microstructures. The protective layer provides a cleanable surface and encapsulates the diffractive microstructures to prevent damage and contamination to the diffractive microstructures. In another embodiment, the optical lens includes a substrate and an anti-reflective layer. The anti-reflective layer is formed on the substrate and includes a plurality of diffractive microstructures.
The present disclosure is directed to a fluidic ejection device configured to detect whether one or more nozzles of the fluidic ejection device is in a normal state, a blocked nozzle state, or an accumulated fluid state. The fluidic ejection device includes an optical blockage detector having a light emitting device configured to emit a light signal, and a light sensor configured to detect the light signal. The optical blockage detector detects the normal state, the blocked nozzle state, and the accumulated fluid state based on the detected light signal.
Image sensor including photodiode array comprising a first transistor coupled to a photodiode to receive a column enable signal and a second transistor coupled to the photodiode to receive a column disable signal
A sensor has plurality of pixels arranged in a plurality of rows and columns with row control circuitry for controlling which one of said rows is activated and column control circuitry for controlling which of said pixels in said activated row is to be activated. The column circuitry has memory configured to store information indication as to which of the pixels are defective, wherein each of the pixels has a photodiode and a plurality of transistors which control the activation of the photodiode. A first transistor is configured to be controlled by a column enable signal while a second transistor is configured to be controlled by a row select signal.
A method for forming a molded proximity sensor with an optical resin lens and the structure formed thereby. A light sensor chip is placed on a substrate, such as a printed circuit board, and a diode, such as a laser diode, is positioned on top of the light sensor chip and electrically connected to a bonding pad on the light sensor chip. Transparent, optical resin in liquid form is applied as a drop over the light sensor array on the light sensor chip as well as over the light-emitting diode. After the optical resin is cured, a molding compound is applied to an entire assembly, after which the assembly is polished to expose the lenses and have a top surface flush with the top surface of the molding compound.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
H01L 31/167 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails structurellement associés, p.ex. formés dans ou sur un substrat commun, avec une ou plusieurs sources lumineuses électriques, p.ex. avec des sources lumineuses électroluminescentes, et en outre électriquement ou optiquement couplés avec lesdites sour le dispositif à semi-conducteur sensible au rayonnement étant commandé par la ou les sources lumineuses les sources lumineuses et les dispositifs sensibles au rayonnement étant tous des dispositifs semi-conducteurs caractérisés par au moins une barrière de potentiel ou de surface
G01V 8/12 - Détection, p.ex. en utilisant des barrières de lumière en utilisant un émetteur et un récepteur
A ToF sensor includes an array of pixels having first and second subsets of pixels, first and second pluralities of TDCs, a routing bus having first and second pluralities of bus drivers, and a controller configured to: when the first subset of pixels is active and the second subset of pixels is not active, control the first plurality of bus drivers to route events from half of the pixels of the first subset to the first plurality of TDCs and control the first and second pluralities of bus drivers to route events from the other half of the pixels of the first subset to the second plurality of TDCs, and when the first subset of pixels is not active and the second subset of pixels is active, control the first plurality of bus drivers to route events from the second subset of pixels to the first plurality of TDCs.
Disclosed herein is a time of flight sensing module that includes a reflected laser light detector formed on a printed circuit board, and a plurality of laser modules positioned about a periphery of the reflected laser light detector. Each laser module includes an interposer substrate vertically spaced apart from the printed circuit board, at least one laser diode carried by the interposer substrate, and a diffuser spaced apart from the interposer substrate and over the at least one laser diode. A lens may be positioned over the reflected laser light detector, and the plurality of laser modules are positioned about the periphery of the lens.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01B 11/22 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la profondeur
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
A method includes emitting a pattern of transmitted light into a three-dimensional environment from an optical transmitter and receiving reflected light from the pattern of transmitted light at an optical receiver. The method includes identifying light-sensitive pixels of that are stimulated by from the pattern of reflected light and generating an up-sampled matrix with subsections that correspond to light-sensitive pixels. The method includes sparsely populating subsections of the up-sampled matrix with a pattern of non-zero entries and imaging the three-dimensional environment.
H04N 13/239 - Générateurs de signaux d’images utilisant des caméras à images stéréoscopiques utilisant deux capteurs d’images 2D dont la position relative est égale ou en correspondance à l’intervalle oculaire
A method includes receiving a histogram output from a detector sensor, and calculating a median point of a pulse waveform within the histogram. The pulse waveform has an even probability distribution over at least one quantization step of the histogram around the median point. A corresponding apparatus can include a detector sensor and a co-processor coupled to the detector sensor.
G06F 17/18 - Opérations mathématiques complexes pour l'évaluation de données statistiques
G01S 7/4863 - Réseaux des détecteurs, p.ex. portes de transfert de charge
G06F 11/07 - Réaction à l'apparition d'un défaut, p.ex. tolérance de certains défauts
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 7/487 - Extraction des signaux d'écho désirés
A system and method are provided on one or more companion chips having a plurality of cores. Each core has core circuitry and a test interface for carrying out tests in relation to the core circuitry. The test interface has an address register to hold an address of the core and address determination circuitry. The address determination circuitry is configured to compare an address received on an address line to the address held in the address register to determine whether a core is being addressed. The address determination circuitry is also configured to direct the test interface to carry out a testing operation in response to the determination.
G06F 11/22 - Détection ou localisation du matériel d'ordinateur défectueux en effectuant des tests pendant les opérations d'attente ou pendant les temps morts, p.ex. essais de mise en route
G01R 31/3185 - Reconfiguration pour les essais, p.ex. LSSD, découpage
A single photon avalanche diode (SPAD) has a cathode coupled to a high voltage supply and an anode coupled to a first node. A photodetection circuit includes: a first n-channel transistor having a drain coupled to the first node, a source coupled to ground, and a gate coupled to a third node; a second n-channel transistor having a drain coupled to the first node, a source coupled to ground, and a gate coupled to a second node; and an inverter having an input coupled to the first node and an output coupled to an intermediate node. A current starved inverter has an input coupled to the intermediate node and an output coupled to the second node, a logic gate has inputs coupled to the intermediate node and the second node, and an output coupled to the third node.
An electronic device includes a time-of-flight unit with a laser emitting ranging light toward a scene, and a detector detecting ranging light reflected from the scene. The detector includes photodetection regions of macropixels. Each macropixel includes photodiodes, and OR logic circuitry receiving outputs of photodiodes as input and generating a detection signal. Each macropixel has output combining logic, and selection circuitry selectively passing the detection signal to the output combining logic or to output combining logic of a neighboring macropixel. The output combining logic has inputs coupled to the selection circuitry and the selection circuitry of the neighboring macropixel, and generates an output signal by logically combining outputs of the selection circuitry and the selection circuitry of the neighboring macropixel. Timing circuitry determines distances to points of the scene from elapsed time between emitting the ranging light and detecting of ranging light reflected from the scene by the photodetection regions.
H03K 19/17764 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion utilisant des éléments spécifiés utilisant des circuits logiques élémentaires comme composants disposés sous forme matricielle - Détails structurels des ressources de configuration pour la fiabilité
H03K 19/20 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion caractérisés par la fonction logique, p.ex. circuits ET, OU, NI, NON
72.
Optical sensor and apparatus comprising an optical sensor having a readout circuit to determine an ambient light level based on voltage across a photodetector at the end of an exposure time
An optical sensor includes pixels. Each pixel has a photodetector. A readout circuit performs a process over an exposure time where the photodetector is connected to a reverse bias voltage supply to reset a voltage across the photodetector, and the photodetector is disconnected from the reverse bias voltage supply until that the voltage across the photodetector decreases in response to received ambient light. An ambient light level is then determine an based on a number of times the voltage across the photodetector is reset over the exposure time.
H01L 23/58 - Dispositions électriques structurelles non prévues ailleurs pour dispositifs semi-conducteurs
H01L 27/144 - Dispositifs commandés par rayonnement
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
In an embodiment, a method includes: receiving a first plurality of digital codes from a time-to-digital converter (TDC); TDC; generating a coarse histogram from the first plurality of digital codes; detecting a peak coarse bin from the plurality of coarse bins; after receiving the first plurality of digital codes, receiving a second plurality of digital codes from the TDC; and generating a fine histogram from the second plurality of digital codes based on the detected peak coarse bin, where a fine histogram depth range is narrower than a coarse histogram depth range, where a lowest fine histogram depth is lower or equal to a lowest coarse peak depth, and where a highest fine histogram depth is higher or equal to a highest coarse peak depth.
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 17/89 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour la cartographie ou l'imagerie
In an embodiment, a method includes: providing a gray-coded time reference to a time-to-digital converter (TDC); receiving an event from an event signal; latching the gray-coded time reference into a memory upon reception of the event signal; and updating a time-of-flight (ToF) histogram based on the latched gray-coded time reference.
A diffuse illumination system for reducing diffusion-related illumination inhomogeneities includes an array of vertical cavity surface emitting laser (VCSEL) emitters and a diffusing element including a transparent substrate and an array of nanostructures. A dimension and a shape of each nanostructure is configured to retard phases of two orthogonal polarization states of light incident on each nanostructure from the emitters for reducing illumination inhomogeneities in the output.
An optical device is mounted to an electronic circuit having a main face with at least one light source. The optical device is made from a block which includes, for each light source, a corresponding opening that passes through the block. The opening includes a cylindrical part with a threading on an inside surface.
G06T 5/50 - Amélioration ou restauration d'image en utilisant plusieurs images, p.ex. moyenne, soustraction
H04N 23/741 - Circuits de compensation de la variation de luminosité dans la scène en augmentant la plage dynamique de l'image par rapport à la plage dynamique des capteurs d'image électroniques
An embodiment method of measuring ambient light comprises generating, by an ambient light sensor associated with a screen which alternates between first phases in which light is emitted and second phases in which no light is emitted by the screen, a first signal representative of an intensity of light received by the ambient light sensor during the first and second phases; comparing the first signal with a threshold intensity value; and controlling a timing of an ambient light measurement by the light sensor based on the comparison.
G09G 3/3225 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active
The present disclosure is directed to an electronic device including a sensor having a transmission module configured to provide a plurality of collimated light beams. The transmission module includes a light source and a transmission beam splitter. The transmission beam splitter includes a plurality of lenslets. The transmission beam splitter is configured to receive one or more light beams from the light source and refract the one or more light beams for forming the plurality of collimated light beams.
A pixel includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage supply through a quenching element, with the SPAD having a capacitance at its anode formed from a deep trench isolation, with the quenching element having a sufficiently high resistance such that the capacitance is not fully charged when the SPAD is struck by an incoming photon. The pixel includes a clamp transistor configured to be controlled by a voltage clamp control signal to clamp voltage at an anode of the SPAD when the SPAD is struck by an incoming photon to be no more than a threshold clamped anode voltage, and readout circuitry coupled to receive the clamped anode voltage from the clamp transistor and to generate a pixel output therefrom. The threshold clamped anode voltage is below a maximum operating voltage rating of transistors forming the readout circuitry.
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
81.
Method for operating a ToF ranging array, corresponding circuit and device
In an embodiments, a method for operating a time-of-flight (ToF) ranging array includes: illuminating a field-of-view (FoV) of the ToF ranging array with radiation pulses; receiving reflected radiation pulses with a plurality of single photon avalanche diodes (SPADs) in a region of interest (ROI) of the ToF ranging array, the plurality of SPADs arranged in a plurality of SPAD clusters; determining an ambient count of ambient light events generated by SPADs of a first SPAD cluster of the plurality of SPAD clusters; and gating an output of the first SPAD cluster based on the ambient count.
G01S 17/48 - Systèmes de triangulation active, c. à d. utilisant la transmission et la réflexion d'ondes électromagnétiques autres que les ondes radio
G01S 17/18 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues dans lesquels des fenêtres en distance sont utilisées
An embodiment method of command of an electronic device comprises controlling a screen to alternate periodically between a first phase in which the screen emits light and a second phase in which no light is emitted by the screen, and precharging a charge pump of an ambient light sensor during the first phases, the ambient light sensor comprising at least a single photon avalanche diode powered by the charge pump.
G09G 3/32 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED]
83.
Photodetection circuit with extended hold-off time for SPAD quench assistance
A photodetection circuit includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage supply through a quench resistance and an anode coupled to a first node, a capacitive deep trench isolation capacitor coupled between the first node and ground, and a first n-channel transistor. The first n-channel transistor has a drain coupled to the first node, a source coupled to ground, and a gate coupled to a resistance control signal. A second n-channel transistor has a drain coupled to the first node, a source coupled to ground, and a gate coupled to a second node. An inverter has an input coupled to the first node and an output coupled to an intermediate node. A current starved inverter has an input coupled to the intermediate node and an output coupled to the second node.
A photodetection circuit includes a single photon avalanche diode (SPAD), and an active quenching circuit coupling the SPAD to an intermediate node and having a variable RC constant. The variable RC constant provides a first RC constant during an idle state so that when the SPAD detects a photon, the SPAD avalanches to begin quenching to set a magnitude of a voltage at a terminal of the SPAD to a quench voltage, the quench voltage being greater than a threshold voltage; a second RC constant greater than the first RC constant during a hold off period during which the quenching occurs so as to maintain the voltage at the terminal of the SPAD at a magnitude that is above the threshold voltage during the hold off period; and a third RC constant less than the second RC constant but greater than the first RC constant during a recharge period during which the SPAD is recharged.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
An electronic integrated circuit chip includes a semiconductor substrate with a front side and a back side. A first reflective shield is positioned adjacent the front side of the semiconductor substrate and a second reflective shield is positioned adjacent the back side of the semiconductor substrate. Photons are emitted by a photon source to pass through the semiconductor substrate and bounce off the first and second reflective shields to reach a photon detector at the front side of the semiconductor substrate. The detected photons are processed in order to determine whether to issue an alert indicating the existence of an attack on the electronic integrated circuit chip.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
The present disclosure is directed to a sensor that detects a distance between the sensor and a target object. The sensor includes a transmission optical structure and/or a light source that polarizes light and minimizes cross talk within the sensor. As a result, detection results of the sensor are improved.
H01S 5/183 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p.ex. lasers à émission de surface à cavité verticale [VCSEL]
G01S 17/08 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement
G01S 7/499 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe utilisant des effets de polarisation
87.
Time of flight (TOF) sensor with transmit optic providing for reduced parallax effect
A transmit integrated circuit includes a light source configured to generate a beam of light. A receive integrated circuit includes a first photosensor. A transmit optic is mounted over the transmit and receive integrated circuits. The transmit optic is formed by a prismatic light guide and is configured to receive the beam of light. An annular body region of the transmit optic surrounds a central opening which is aligned with the first photosensor. The annular body region includes a first reflective surface defining the central opening and further includes a ring-shaped light output surface surrounding the central opening. Light is output from the ring-shaped light output surface in response to light which propagates within the prismatic light guide in response to the received beam of light and which reflects off the first reflective surface.
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
A single photon avalanche diode based range detecting apparatus includes a reference array of single photon avalanche diodes configured to receive light from an illumination source via an internally coupled path. A return array of single photon avalanche diodes is configured to receive light from the illumination source via an external free space path. A calibration pulse generator is configured to generate a calibration signal pulse. Readout circuitry is configured to receive an output of the reference array via a reference signal path, an output of the return array via a return signal path, and an output of the calibration pulse generator via a calibration signal path. The readout circuitry is configured to determine a delay difference value between the reference signal path and the return signal path based on the output of the calibration pulse generator via the calibration signal path.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
H05B 47/18 - Commande de la source lumineuse par télécommande via une transmission par bus de données
H05B 45/00 - Circuits pour faire fonctionner des diodes électroluminescentes [LED]
G01S 7/4863 - Réseaux des détecteurs, p.ex. portes de transfert de charge
G09G 3/3216 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice passive
G09G 3/3283 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p.ex. utilisant des diodes électroluminescentes [LED] organiques, p.ex. utilisant des diodes électroluminescentes organiques [OLED] - Détails des circuits de commande pour les électrodes de données dans lequel le circuit de commande de données fournit un courant de données variable pour le réglage du courant à travers les éléments électroluminescents, ou de la tension aux bornes de ces éléments
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
A depth map sensor includes a first array of first pixels, each first pixel having a first photodetector associated with a pixel circuit that comprises a plurality of first bins for accumulating events. A clock source is configured to generate a plurality of phase-shifted clock signals. A first circuit has a plurality of first output lines coupled to the first array of first pixels. The first circuit is configured to receive the plurality of phase-shifted clock signals. The first circuit includes a first block and a second block. The first block is configured to propagate the plurality of phase-shifted clock signals to the second block during a first period determined by a first enable signal and the second block configured to select to which of the plurality of first output lines each of the plurality of phase-shifted clock signals is applied.
A time-of-flight ranging system disclosed herein includes a receiver asserting a photon received signal in response to detection of light that has reflected off a target and returned to the time-of-flight ranging system. A first latch circuit has first and second data inputs receiving a first pair of differential timing references, the first latch circuit latching data values at its first and second data inputs to first and second data outputs based upon assertion of the photon received signal. A first counter counts latching events of the first latch circuit during which the first data output is asserted, and a second counter counts latching events of the first latch circuit during which the second data output is asserted. Processing circuitry determines distance to the target based upon counted latching events output from the first and second counters.
G01C 3/08 - Utilisation de détecteurs électriques de radiations
G01S 7/4913 - Circuits de détection, d'échantillonnage, d'intégration ou de lecture des circuits
G01S 17/32 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées
G01S 7/48 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
91.
Single-photon avalanche diode-based light communication devices
A method of processing a visible light communication (VLC) signal using a single-photon avalanche diode (SPAD) includes detecting photons of a VLC signal at a SPAD detector, counting the photons detected by the SPAD detector to generate a combined VLC signal comprising a data signal and an ambient signal, extracting the ambient signal from the combined VLC signal, subtracting the ambient signal from the combined VLC signal to generate the data signal, and outputting the data signal as a bitstream.
H04B 10/00 - Systèmes de transmission utilisant des ondes électromagnétiques autres que les ondes hertziennes, p.ex. les infrarouges, la lumière visible ou ultraviolette, ou utilisant des radiations corpusculaires, p.ex. les communications quantiques
H04B 10/66 - Récepteurs non cohérents, p.ex. à détection directe
H04B 10/50 - Systèmes de transmission utilisant des ondes électromagnétiques autres que les ondes hertziennes, p.ex. les infrarouges, la lumière visible ou ultraviolette, ou utilisant des radiations corpusculaires, p.ex. les communications quantiques Émetteurs
An embodiment method of manufacturing an avalanche diode includes forming a first trench in a substrate material, filling the first trench with a first material that comprises a dopant, and causing the dopant to diffuse from the first trench to form part of a PN junction. An avalanche diode array can be formed to include a number of the avalanche diodes.
H01L 31/10 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
H01L 31/0352 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur forme ou par les formes, les dimensions relatives ou la disposition des régions semi-conductrices
H01L 31/103 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel étant du type PN à homojonction
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 29/72 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués
In an embodiment, a method includes: providing a gray-coded time reference to a time-to-digital converter (TDC); receiving an event from an event signal; latching the gray-coded time reference into a memory upon reception of the event signal; and updating a time-of-flight (ToF) histogram based on the latched gray-coded time reference.
The present disclosure relates to a device that includes a photodiode having a first terminal that is coupled by a resistor to a first rail configured to receive a high supply potential and a second terminal that is coupled by a switch to a second rail configured to receive a reference potential. A read circuit is configured to provide a pulse when the photodiode enters into avalanche, and a control circuit is configured to control an opening of the switch in response to a beginning of the pulse and to control a closing of the switch in response to an end of the pulse.
H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
95.
High voltage generation using reconfigurable photodiodes in pixel array
An imaging sensor includes a pixel array containing photodiodes, the photodiodes being isolated from one another by full thickness deep trench isolations. Row control circuitry controls which rows of the pixel array operate in an imaging mode and which rows of the pixel array operate in an energy harvesting mode, on a row by row basis. Switch circuitry selectively connects different groups of photodiodes in rows operating in the energy harvesting mode into forward biased series configurations between a voltage output line and a ground line, or into forward biased parallel configurations between the voltage output line and the ground line.
The present disclosure relates to a method of laser safety verification for a depth map sensor, comprising illuminating, during a first illumination phase, using a laser illumination system, a first cluster of one or more first pixels of a pixel array of the depth map sensor, while not illuminating a second cluster, different from the first cluster, of one or more second pixels of the pixel array of the depth map sensor; and detecting, during the first illumination phase, a level of illumination of the second cluster.
G01S 17/89 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour la cartographie ou l'imagerie
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
97.
Higher pixel density histogram time of flight sensor with higher pixel density
A distance from an apparatus to at least one object is determined by generating a first signal and generating light modulated by the first signal to be emitted from the apparatus. Light reflected by the at least one object is detected using a Time-of-flight detector array, wherein each array element of the Time-of-flight detector array generates an output signal from a series of photon counts over a number of consecutive non-overlapping time periods. The output signals are compared to the first signal to determine at least one signal phase difference. From this at least one signal phase difference a distance from the apparatus to the at least one object is determined.
G01S 17/26 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues dans lesquels les impulsions transmises utilisent une onde porteuse modulée en fréquence ou en phase, p.ex. pour la compression d'impulsion des signaux reçus
G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p.ex. caméras à temps de vol ou lidar flash
G01S 17/89 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour la cartographie ou l'imagerie
G01C 3/08 - Utilisation de détecteurs électriques de radiations
G01S 17/36 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées avec comparaison en phase entre le signal reçu et le signal transmis au même moment
98.
Pixel circuit and method of operating the same in an always-on mode
An embodiment method of operating an imaging device including a sensor array including a plurality of pixels, includes: capturing a first low-spatial resolution frame using a subset of the plurality of pixels of the sensor array; generating, using a processor coupled to the sensor array, a first depth map using raw pixel values of the first low-spatial resolution frame; capturing a second low-spatial resolution frame using the subset of the plurality of pixels of the sensor array; generating, using the processor, a second depth map using raw pixel values of the second low-spatial resolution frame; and determining whether an object has moved in a field of view of the imaging device based on a comparison of the first depth map to the second depth map.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
G06T 7/579 - Récupération de la profondeur ou de la forme à partir de plusieurs images à partir du mouvement
H04N 5/3745 - Capteurs adressés, p.ex. capteurs MOS ou CMOS ayant des composants supplémentaires incorporés au sein d'un pixel ou connectés à un groupe de pixels au sein d'une matrice de capteurs, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
In accordance with embodiments, a first counter of a plurality of counters of an apparatus receives a plurality of pulse width signals in the time domain. The first counter generates a first increment signal in the time domain from the plurality of pulse width signals based on a first row of a Discrete Transform matrix. A synchronizer of the apparatus receives the first increment signal. The synchronizer generates a first synchronized increment signal in the time domain from the first increment signal. A first accumulator of a plurality of accumulators of the apparatus receives the first synchronized increment signal. The first accumulator accumulates the first synchronized increment signal over a period of time to generate a first frequency domain signal.
H04N 19/625 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant un codage par transformée utilisant une transformée en cosinus discrète
H04L 25/49 - Circuits d'émission; Circuits de réception à au moins trois niveaux d'amplitude
H04N 5/378 - Circuits de lecture, p.ex. circuits d’échantillonnage double corrélé [CDS], amplificateurs de sortie ou convertisseurs A/N
H04N 19/63 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant un codage par transformée utilisant une transformée en sous-bandes, p.ex. ondelettes
100.
Reverse body biasing of a transistor using a photovoltaic source
A metal oxide semiconductor (MOS) transistor has a source terminal, a drain terminal, a gate terminal and a body terminal. The source terminal is connected to receive a supply voltage and the body terminal is connected to receive a reverse body bias voltage. A photovoltaic circuit has a first terminal connected to the source terminal of the MOS transistor and a second terminal connected to the body terminal of the MOS transistor. The photovoltaic circuit converts received photons from the environment to generate the reverse body bias voltage.
H03K 19/00 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion
H01L 27/14 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit ra
H03K 19/003 - Modifications pour accroître la fiabilité
H01L 27/144 - Dispositifs commandés par rayonnement
H01L 27/16 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants thermomagnétiques
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
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