09 - Appareils et instruments scientifiques et électriques
40 - Traitement de matériaux; recyclage, purification de l'air et traitement de l'eau
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Semiconductors; semiconductor component; semiconductor
memories; semiconductor wafers; integrated circuits;
multiprocessor chips; dynamic random access memory (DRAM);
solid state drives; blank flash memory cards; blank USB
flash drives; processors [central processing units]; image
sensors for video cameras; image sensors for photographic
devices; image sensors for smartphone cameras; image sensors
for tablet computer cameras; computer software for use in
semiconductor design; computer software for use in designing
and manufacturing of semiconductor systems and for designing
of semiconductor cell library and integrated circuit;
computer software for use in providing information on
semiconductor manufacturing process; computer software for
use to improve accuracy and efficiency in the field of
semiconductor manufacturing; computer software for use in
processing semiconductor wafers. Semiconductor and integrated circuit foundry; custom
manufacturing and assembling services relating to
semiconductor parts and integrated circuits; processing of
semiconductors; processing of parts for semiconductor
manufacturing. Product research, custom design and testing for new product
development regarding semiconductors; product research,
custom design and testing for new product development
regarding semiconductor cell libraries; design of
semiconductors or integrated circuits; design of
semiconductor chips; technology consultation services
regarding semiconductors; technology consultation services
regarding integrated circuits; software as a service [SaaS]
featuring software for use in semiconductor design; software
as a service [SaaS] featuring software for use in integrated
circuit design; design of semiconductor manufacturing
machines.
3.
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Lim, Dongwon
Baek, Inseok
Ahn, Sangbin
Choi, Seokyeong
Hong, Seungyong
Abrégé
An integrated circuit device including a first cell block on a substrate that includes a first cell area, a first dummy cell area surrounding the first cell area in a plan view, the first dummy cell area including first active regions and second active regions in an outer periphery of the first dummy cell area, the first active regions each having a first size and the second active regions each having a second size larger than the first size, first and second word lines extending in a first direction and alternating with each other in a second direction, each of the first word lines including a first landing area extending between a second active region and a first active region, the first active region being near and apart from the second active region in the second direction, and first word line contacts on the first landing area may be provided.
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
You, Hyeongyu
Do, Jungho
Nam, Geonwoo
Yu, Jisu
Jeong, Minjae
Cho, Jaehee
Abrégé
An integrated circuit includes a first cell in a first row extending in a first direction, a first power line extending in the first direction in a power rail layer, and configured to provide a first supply voltage to the first cell, and a first pattern overlapping a first boundary of the first row, and extending in the first direction in a first wiring layer, wherein the first cell includes at least one pattern extending in the first direction in the first wiring layer, and at least one transistor between the power rail layer and the first wiring layer, and the first pattern is configured to receive an input signal or an output signal of the first cell.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 27/088 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type comprenant uniquement des composants à effet de champ les composants étant des transistors à effet de champ à porte isolée
H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
5.
ELECTRONIC DEVICE FOR MATCHING ANTENNA IMPEDANCE, AND OPERATION METHOD FOR SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Yun, Yongbeen
Kim, Joongkwon
Park, Jongho
Heo, Wonhyung
Abrégé
According to various embodiments, an electronic device may include: an antenna, an antenna tuner, a transceiver, a power amplifier electrically connected to the antenna tuner and configured to perform power amplification according to an execution of impedance matching, and at least one processor operatively connected to the transceiver, the antenna tuner, and the power amplifier. The at least one processor may be configured to: configure a reference tuner code for the antenna tuner connected to the antenna in a signal path of the transceiver and identify a reflection coefficient of the antenna, calculate a tuner code of the antenna tuner based on whether the identified reflection coefficient of the antenna has been changed and an operation of at least one component of the antenna tuner, and perform the impedance matching of the antenna.
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Yoon, Jongmin
Kim, Chulkwi
Abrégé
An embodiment of the present disclosure provides a wearable electronic device and a method for controlling a power path in the wearable electronic device. An electronic device according to various embodiments may comprise: a first support frame including a first system; a second support frame including a second system; a switch module including at least one switch configured to change a configuration of a power path between the first system and the second system; and at least one processor provided in the first system and/or the second system and operatively connected to the switch module, wherein one or more of the at least one processor is configured to change the configuration of the switch module so that the power path between the first system and the second system is connected to a power path of a first power source (VBUS) under a first specified condition of the electronic device, and change the configuration of the switch module so that the power path between the first system and the second system is connected to a power path of a second power source (VBAT) under a second specified condition of the electronic device.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Yun, Hyelim
Min, Bongkyu
Kim, Dohoon
Kim, Taewoo
Park, Jinyong
Bang, Jungje
Lee, Hyeongju
Abrégé
An example electronic device includes a printed circuit board on which one or more circuit components are disposed, and an interposer surrounding at least some circuit components of the one or more circuit components and including an inner surface adjacent to the at least some circuit components and an outer surface facing away from the inner surface and having a plurality of through holes. The interposer is disposed on the printed circuit board such that one or more through holes of the plurality of through holes are electrically connected with a ground of the printed circuit board. The outer surface of the interposer includes a first conductive region electrically connected with at least one first through hole of the one or more through holes, and a non-conductive region, the inner surface of the interposer includes a second conductive region electrically connected with at least one second through hole of the one or more through holes, and the second conductive region includes a region facing the non-conductive region.
H05K 9/00 - Blindage d'appareils ou de composants contre les champs électriques ou magnétiques
H05K 1/11 - Eléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
H05K 1/14 - Association structurale de plusieurs circuits imprimés
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H05K 7/14 - Montage de la structure de support dans l'enveloppe, sur cadre ou sur bâti
8.
FIELD-EFFECT TRANSISTOR WITH UNIFORM SOURCE/DRAIN REGIONS ON SELF-ALIGNED DIRECT BACKSIDE CONTACT STRUCTURES OF BACKSIDE POWER DISTRIBUTION NETWORK (BSPDN)
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Lee, Jongjin
Hong, Wonhyuk
Seo, Kang-Ill
Abrégé
Provided is field-effect transistor structure including: a channel structure; a source/drain region and a 2nd source/drain region connected to each other through the channel structure; a 1st contact plug, on a top surface of the 1st source/drain region, connected to a voltage source or 1st circuit element through a back-end-of-line (BEOL) structure; and a 2nd contact plug, on a bottom surface of the 2nd source/drain region, connected to the 1st voltage source, through a backside power rail, or another circuit element, wherein the 1st source/drain region and the 2nd source/drain region have a substantially same height.
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/775 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à une dimension, p.ex. FET à fil quantique
9.
ELECTRONIC DEVICE AND METHOD FOR PROVIDING PANEL FOR CONTROL OF APPLICATION IN ELECTRONIC DEVICE
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Chung, Jinkyo
Jang, Eunah
Na, Minwook
Abrégé
An electronic device includes a hinge configured to foldably connect a first housing to a second housing; a display including a first display area disposed on the first housing, and a second display area and a third display area arranged on the second housing; and at least one processor configured to: in a first state in which the hinge is unfolded, display a first application in the first display area and the second display area, and display, in the third display area, at least one default button, in a second state in which the hinge is folded, control the display to display a panel button, in the third display area, and based on a selection of the panel button in the second state, display the first application in the first display area, and display, in the second display area, a first panel including at least one control button and at least one system button.
G06F 3/0482 - Interaction avec des listes d’éléments sélectionnables, p.ex. des menus
G06F 3/041 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction
G06F 3/04812 - Techniques d’interaction fondées sur l’aspect ou le comportement du curseur, p.ex. sous l’influence de la présence des objets affichés
G06F 3/04883 - Techniques d’interaction fondées sur les interfaces utilisateur graphiques [GUI] utilisant des caractéristiques spécifiques fournies par le périphérique d’entrée, p.ex. des fonctions commandées par la rotation d’une souris à deux capteurs, ou par la nature du périphérique d’entrée, p.ex. des gestes en fonction de la pression exer utilisant un écran tactile ou une tablette numérique, p.ex. entrée de commandes par des tracés gestuels pour l’entrée de données par calligraphie, p.ex. sous forme de gestes ou de texte
G06F 3/04886 - Techniques d’interaction fondées sur les interfaces utilisateur graphiques [GUI] utilisant des caractéristiques spécifiques fournies par le périphérique d’entrée, p.ex. des fonctions commandées par la rotation d’une souris à deux capteurs, ou par la nature du périphérique d’entrée, p.ex. des gestes en fonction de la pression exer utilisant un écran tactile ou une tablette numérique, p.ex. entrée de commandes par des tracés gestuels par partition en zones à commande indépendante de la surface d’affichage de l’écran tactile ou de la tablette numérique, p.ex. claviers virtuels ou menus
H04M 1/02 - Caractéristiques de structure des appareils téléphoniques
10.
FILM FOR TRANSFERRING AN IMAGE SENSOR AND METHOD OF MANUFACTURING AN IMAGE SENSOR PACKAGE USING THE SAME
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Jung, Dusik
Abrégé
A film for transferring an image sensor includes: a first surface and a second surface opposite the first surface in a vertical direction; protrusion portions disposed in a horizontal direction on the first surface; and a recess on each of the protrusion portions.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Chung, Sunghee
Kim, Hyeongjin
Shin, Joongshik
Han, Jeehoon
Abrégé
A semiconductor device includes a source structure including a plate layer and first and second horizontal conductive layers stacked in order on the plate layer, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the source structure, a channel structure penetrating through the gate electrodes, extending in the first direction, and including a channel layer in contact with the first horizontal conductive layer, and a separation region penetrating through the gate electrodes and extending in the first direction and in a second direction perpendicular to the first direction, wherein the first horizontal conductive layer extends horizontally below the separation region and has a seam overlapping the separation region in the first direction.
H10B 43/27 - Dispositifs EEPROM avec des isolants de grille à piégeage de charge caractérisés par les agencements tridimensionnels, p ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p.ex. avec des canaux inclinés les canaux comprenant des parties verticales, p.ex. des canaux en forme de U
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H10B 41/10 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la configuration vue du dessus
H10B 41/27 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par les agencements tridimensionnels, p ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p.ex. avec des canaux inclinés les canaux comprenant des parties verticales, p.ex. des canaux en forme de U
H10B 41/35 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la région noyau de mémoire avec un transistor de sélection de cellules, p.ex. NON-ET
H10B 41/40 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la région de circuit périphérique
H10B 43/10 - Dispositifs EEPROM avec des isolants de grille à piégeage de charge caractérisés par la configuration vue du dessus
H10B 43/35 - Dispositifs EEPROM avec des isolants de grille à piégeage de charge caractérisés par la région noyau de mémoire avec transistors de sélection de cellules, p.ex. NON-ET
H10B 43/40 - Dispositifs EEPROM avec des isolants de grille à piégeage de charge caractérisés par la région de circuit périphérique
H10B 80/00 - Ensembles de plusieurs dispositifs comprenant au moins un dispositif de mémoire couvert par la présente sous-classe
12.
APPARATUS AND METHOD IN WIRELESS COMMUNICATION SYSTEM
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Zhang, Sa
Sun, Feifei
Abrégé
An apparatus in a wireless communication system and a method performed by the same are provided. The method includes determining whether uplink control information (UCI) is multiplexed in a first physical uplink shared channel (PUSCH) including more than one transport block and/or whether the first PUSCH is simultaneously transmitted with a physical uplink control channel (PUCCH) including the UCI, receiving information for scheduling transmission of the first PUSCH, and transmitting the first PUSCH and/or the PUCCH including the UCI based on the determination. The disclosure can improve the communication efficiency.
H04W 72/1268 - Jumelage du trafic à la planification, p.ex. affectation planifiée ou multiplexage de flux de flux de données en liaison ascendante
H04W 72/21 - Canaux de commande ou signalisation pour la gestion des ressources dans le sens ascendant de la liaison sans fil, c. à d. en direction du réseau
13.
FINGERPRINT SENSOR PACKAGE AND SMART CARD HAVING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Lim, Jaehyun
Lee, Kwangjin
Moon, Hyunjong
Choi, Inho
Abrégé
A fingerprint sensor package includes: a first substrate including a core insulating layer including a first surface and a second surface and a through-hole, a first bonding pad on the second surface, and an external connection pad between an edge of the second surface and the first bonding pad; a second substrate in the through-hole and including a third surface and a fourth surface, and including first sensing patterns on the third surface, spaced apart in a first direction, and extending in a second direction, second sensing patterns spaced apart from each other in the second direction and extending in the first direction, and a second bonding pad on the fourth surface; a conductive support electrically connecting the first bonding pad and the second bonding pad and supporting the first substrate and the second substrate; a controller chip on the second substrate; and a molding layer on the second surface.
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,
G06K 19/073 - Dispositions particulières pour les circuits, p.ex. pour protéger le code d'identification dans la mémoire
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Na, Jeongshan
Lee, Youngchol
Jang, Naewon
Jeon, Dukjin
Abrégé
A display apparatus comprises: a light source device configured to emit light; a display panel configured to display the light emitted from the light source device; and an optical sheet disposed at a rear of the display panel, wherein the light source device may include: a substrate; at least one light source electrically connected to the substrate; a light conversion member configured to convert a wavelength of light emitted from the light source; and a conversion member cover covering the light conversion member and configured to allow light to pass therethrough.
H01L 33/50 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de conversion de la longueur d'onde
H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Yu, Hae Jun
Choi, Kyung In
Jung, Soon Wook
Abrégé
There is provided a semiconductor device having improved performance and reliability. A semiconductor device comprises an active pattern extending in a first direction, a gate structure including a gate electrode, a gate spacer, and a gate capping pattern on the active pattern, the gate electrode extending in a second direction different from the first direction and the gate capping pattern including a lower gate capping pattern and an upper gate capping pattern; a source/drain pattern disposed on the active pattern; and a source/drain etch stop film disposed on an upper surface of the source/drain pattern and extending along a sidewall of the gate spacer. The lower gate capping pattern is disposed on an upper surface of the gate electrode and an upper surface of the gate spacer, and the source/drain etch stop film does not extend along a sidewall of the lower gate capping pattern.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/775 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à une dimension, p.ex. FET à fil quantique
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Kang, Sang Kyu
Shin, Jieun
Bang, Hocheol
Lee, Haewon
Abrégé
A semiconductor memory device includes a memory cell array including a plurality of memory cells and a control logic circuit configured to control the semiconductor memory device. The control logic circuit includes a mode register and a remaining lifetime calculating device configured to count usage metrics based on one or more of the following: a number of clock signals received from a memory controller, an amount of data transmitted or received to or from the memory controller, and/or a number of commands received from the memory controller. The remaining lifetime calculating device generates a remaining lifetime code representing a remaining lifetime of the semiconductor memory device based on the usage metrics, and stores the remaining lifetime code in the mode register.
G11C 16/34 - Détermination de l'état de programmation, p.ex. de la tension de seuil, de la surprogrammation ou de la sousprogrammation, de la rétention
17.
METHOD OF REDUCING NITROGEN OXIDE CONCENTRATION IN SAMPLE, BIOREACTOR, AND PLUG FLOW REACTOR
Samsung Electronics Co., Ltd. (République de Corée)
Korea Advanced Institute of Science and Technology (République de Corée)
Inventeur(s)
Song, Seung Hoon
Han, Heejoo
Shim, Woo Yong
Yoon, Sukhwan
Kim, Jae-Young
Yoon, Sojung
Jung, Yu Kyung
Abrégé
A method of reducing a concentration of a nitrogen oxide, the method comprising: contacting a microorganism with a nitrogen oxide-containing sample to reduce the concentration of the nitrogen oxide in the sample, wherein the contacting comprises contacting the microorganism with Fe(II)(L)-NOx in a bioreactor, wherein the Fe(II)(L)-NOx is a complex in which a chelating agent, Fe2+, and NOx are chelated, wherein L is the chelating agent, and wherein NOx is a nitrogen oxide ligand.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Yoon, Sukhoon
Kim, Kwanyoung
Kim, Minsup
Song, Kihyun
Lee, Wonjae
Lee, Jongkeun
Abrégé
A remote control device is disclosed. a remote control device includes: a user interface; a memory storing at least one instruction and a plurality of binary codes; a communication interface; and at least one processor operatively connected with the user interface, the memory, and the communication interface and configured to execute the at least one instruction to: identify, based on a user command receiving through the user interface, a binary code corresponding to the user command from among the plurality of binary codes, identify, based on a pre-set number of bit units, a plurality of bit groups corresponding to the binary code, and control the communication interface to transmit a first pulse signal corresponding to the plurality of bit groups.
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Ahn, Hyunjun
Ji, Byounghoon
Hong, Kyoungwoo
Abrégé
A method of depositing an atomic layer is provided. The method includes a plurality of deposition cycles. Each of the plurality of deposition cycles includes rotating a valve plate included in an exhaust port by a first angle while supplying a precursor to a chamber into which a substrate is loaded, rotating the valve plate by a second angle while supplying a purge gas to the chamber, rotating the valve plate by a third angle while supplying a reactor to the chamber, and rotating the valve plate by the second angle while supplying the purge gas to the chamber, and wherein the first angle, the second angle, and the third angle are certain angles between an upper surface of the valve plate and a virtual plane vertical to an internal path of the exhaust port, and the first angle differs from the third angle.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
20.
METHOD AND APPARATUS FOR PERFORMING DISCOVERY FOR SIDELINK COMMUNICATION IN WIRELESS COMMUNICATION SYSTEM
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Yu, Jeongseok
Agiwal, Anil
Kang, Hyunjeong
Abrégé
The disclosure relates to a fifth generation (5G) or sixth generation (6G) communication system to support a data transmission rate higher than before. Disclosed is a method performed by a first user equipment (UE), including obtaining configuration information including information on a threshold used for identifying, by the first UE performing a UE-to-UE (U2U) relay operation, whether to perform transmission of a second message based on a first message received by the first UE from a second UE, receiving, from the second UE, a first discovery message including information on the second UE, identifying, based on reference signal received power (RSRP) measured based on communication with the second UE and the threshold, whether to perform transmission of the second message based on the received first discovery message, and performing, based on a result of the identification, transmission of the second message based on the received first discovery message.
H04W 40/22 - Sélection d'itinéraire ou de voie de communication, p.ex. routage basé sur l'énergie disponible ou le chemin le plus court utilisant la retransmission sélective en vue d'atteindre une station émettrice-réceptrice de base [BTS Base Transceiver Station] ou un point d'accès
H04W 8/00 - Gestion de données relatives au réseau
21.
SUBSTRATE PROCESSING APPARATUS AND METHOD OF PROCESSING SUBSTRATE BY USING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Yoo, Seungwan
Lee, Jeongyeon
Kim, Dohyung
Park, Jaehong
Lim, Dongchan
Abrégé
A substrate processing apparatus including a first chamber configured to accommodate a substrate therein and a second chamber including a heater provided in an internal space thereof, wherein the first chamber includes a target assembly configured to fix a target including a deposition material, a first ion gun configured to irradiate an ion beam onto the target to discharge deposition particles, which are ions of the deposition material, to the substrate, and a second ion gun configured to irradiate a hydrogen ion beam toward the substrate, the second ion gun includes a plasma generator configured to generate plasma, and a first grid electrode and a second grid electrode each configured to extract ions from the container, and the second chamber is configured to be provided with the substrate, on which the hydrogen ion beam has been irradiated, and perform thermal treatment on the substrate.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Park, Joonsoo
Kuh, Bongjin
Kim, Bongsoo
Kim, Yoonjae
Woo, Dongsoo
Abrégé
Provided is an integrated circuit device including a substrate including a first active area and a second active area each extending in a first direction, a bit line extending in the first direction in a first trench of the substrate and arranged between the first active area and the second active area in a second direction perpendicular to the first direction, a contact structure including a lower contact contacting the bit line and an upper contact contacting the first active area, a word line extending in the second direction in a second trench of the substrate, a plurality of landing pads on the substrate, and a capacitor structure including a plurality of lower electrodes on the plurality of landing pads, wherein the bit line and the word line are buried under an upper surface of the substrate.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H10B 12/00 - Mémoires dynamiques à accès aléatoire [DRAM]
23.
METHOD AND APPARATUS OF PERFORMING QOE MEASUREMENTS FOR MBS BROADCAST SERVICES IN THE NEXT MOBILE COMMUNICATION SYSTEM
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Jung, Sangyeob
Jeong, Seungbeom
Abrégé
The disclosure relates to a fifth-generation (5G) or a sixth-generation (6G) communication system for supporting higher data rates, especially, for performing quality of experience (QoE) measurement and reporting for multimedia broadcast service (MBS) services are provided. A method performed by a terminal in a wireless communication system is provided. The method includes receiving, from a base station, a message including information to configure an application layer measurement while the terminal is in a radio resource control (RRC) connected state, the information including a configuration of QoE measurements for multimedia broadcast service (MBS) broadcast, identifying whether the information further includes an indicator for identifying at least one RRC state for which the configuration is applied, and in case that the information further includes the indicator, performing the QoE measurements using the configuration, based on the indicator.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Oh, Junyoung
Park, Jumyong
Oh, Dongjoon
Abrégé
A semiconductor chip stack structure includes: a first semiconductor chip including a first semiconductor substrate, a first redistribution layer on the first semiconductor substrate and including a first redistribution pattern, and a first pad on an outermost side of the first redistribution layer; a second semiconductor chip including a second semiconductor substrate, a second redistribution layer on the second semiconductor substrate and including a second redistribution pattern, and a second pad on an outermost side of the second redistribution layer, and an area of the second semiconductor chip being smaller than an area of the first semiconductor chip; a first metal wire on the first semiconductor chip; a second metal wire on the second semiconductor chip; and a molding member on the first semiconductor chip and at least a portion of each of the second semiconductor chip, the first metal wire, and the second metal wire.
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 23/498 - Connexions électriques sur des substrats isolants
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Yang, Dae-Yeol
Jun, Bohwan
Son, Hong Rak
Yu, Geunyeong
Hwang, Youngjun
Abrégé
a G-LDPC decoder is provided. The G-LDPC decoder includes: a generalized check node decoder configured to, in each of a plurality of iterations: group connected variable nodes into groups, the connected variable nodes being connected to an mth generalized check node among generalized check nodes; generate test patterns in each of one or more of the groups based on a first message received by the mth generalized check node from the connected variable nodes; and identify a value of a second message to be provided from the mth generalized check node to the connected variable nodes based on the test patterns; and a LDPC decoder circuitry configured to, in each of the iterations, update a value of an nth variable node, among the variable nodes, based on the second message received by the nth variable node from a generalized check node that is connected to the nth variable node.
H03M 13/11 - Détection d'erreurs ou correction d'erreurs transmises par redondance dans la représentation des données, c.à d. mots de code contenant plus de chiffres que les mots source utilisant un codage par blocs, c.à d. un nombre prédéterminé de bits de contrôle ajouté à un nombre prédéterminé de bits d'information utilisant plusieurs bits de parité
H03M 13/00 - Codage, décodage ou conversion de code pour détecter ou corriger des erreurs; Hypothèses de base sur la théorie du codage; Limites de codage; Méthodes d'évaluation de la probabilité d'erreur; Modèles de canaux; Simulation ou test des codes
26.
SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Yun, Jung Hoo
Lim, Jae Moon
Abrégé
A semiconductor package includes a semiconductor chip including a first area and a second area around the first area, and a substrate including a second surface, the second surface facing a first surface of the semiconductor chip, a first trench defined on the second surface, and the first trench at least partially overlapping the second area of the semiconductor chip. The semiconductor package includes a bump structure including first bumps on the first area of the semiconductor chip, and second bumps on the second area of the semiconductor chip, the bump structure between the substrate and the semiconductor chip, and a first passive device in the first trench. The second bumps are in contact with the first surface of the semiconductor chip and the first passive device.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
H01L 21/027 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/13 - Supports, p.ex. substrats isolants non amovibles caractérisés par leur forme
H01L 23/498 - Connexions électriques sur des substrats isolants
27.
POWER MANAGEMENT CHIP, ELECTRONIC DEVICE HAVING THE SAME, AND OPERATING METHOD THEREOF
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Yang, Seungwon
Abrégé
An operating method of an electronic device is provided. The operating method includes: generating an idle time corresponding to an idle state; selecting a low-power state from among a plurality of low-power states based on the idle time, a time condition, power consumption in the idle state and an entry success rate of a previous low-power state; and entering each of a plurality of devices into a low-power mode according to the low-power state.
G06F 1/3296 - Gestion de l’alimentation, c. à d. passage en mode d’économie d’énergie amorcé par événements Économie d’énergie caractérisée par l'action entreprise par diminution de la tension d’alimentation ou de la tension de fonctionnement
G06F 1/3228 - Surveillance d’exécution de tâches, p.ex. par utilisation de temporisations d’attente, de commandes d’arrêt ou de commandes d’attente
28.
METHOD AND APPARATUS FOR SUPPROTING RCS AUTO-CONFIGURATION
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Sharma, Himanshu
Bhatia, Sakshi
Abrégé
The disclosure relates to a method for supporting rich communication service (RCS) auto-configuration failure. The method includes: monitoring a plurality of messages exchanged between a user device and a configuration server, detecting a first message received from the configuration server is a failure message, extracting a timer from header of the failure message and a rate limiting factor of service provider from one or more databases, setting an alarm in the user device for sending a second message to the configuration server, storing configuration information including the timer and the rate limiting factor into a SIM memory, retrieving the stored configuration information from the SIM memory with reference to a requesting mode, and configuring the user device to a third message to the configuration server based on the retrieved configuration information.
H04W 4/12 - Messagerie; Boîtes aux lettres; Annonces
H04W 8/18 - Traitement de données utilisateur ou abonné, p.ex. services faisant l'objet d'un abonnement, préférences utilisateur ou profils utilisateur; Transfert de données utilisateur ou abonné
29.
INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Park, Hyunmog
Abrégé
An integrated circuit device includes a plurality of conductive lines extending on a semiconductor substrate in a horizontal direction and overlapping each other in a vertical direction, a plurality of insulating layers alternating with the plurality of conductive lines and extending in the horizontal direction, and a channel structure extending through the plurality of conductive lines and the plurality of insulating layers. The channel structure includes a core insulating layer, a resistance change layer on a side wall and a bottom surface of the core insulating layer, a channel layer on an outside wall of the resistance change layer, and a pad pattern on a top surface of the core insulating layer. A topmost surface of the resistance change layer is in contact with the core insulating layer and is spaced apart from a bottommost surface of the pad pattern.
A semiconductor device includes a substrate including an active region extending in a first direction, a gate structure intersecting the active region on the substrate and extending in a second direction, where the active region includes a recessed region at at least one side of the gate structure, a plurality of channel layers on the active region, spaced apart from each other in a third direction that is substantially perpendicular to an upper surface of the substrate, and at least partially surrounded by the gate structure and a source/drain region in the recessed region of the active region and connected to the plurality of channel layers.
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/161 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée comprenant plusieurs des éléments prévus en
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/775 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à une dimension, p.ex. FET à fil quantique
31.
SENSE AMPLIFIER, OPERATING METHOD THEREOF, AND VOLATILE MEMORY DEVICE INCLUDING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Seo, Duckyoung
Seo, Younghun
Abrégé
Disclosed is a sense amplifier which includes a sense amplification circuit and a sensitivity control circuit. The sense amplification circuit includes first and second MOS transistors. The first MOS transistor is connected with a first bit line and a target memory cell. The second MOS transistor is connected with a second bit line and a non-target memory cell. The sense amplification circuit pre-charges the first and second bit lines with a first driving voltage, compensates for an offset, and senses the target data based on a change in a voltage level of the first bit line, after charge sharing between the target memory cell and the first bit line. The sensitivity control circuit adjusts the sensing sensitivity for the target data indicating a first logical value by increasing a magnitude of a current flowing through the first MOS transistor while the sense amplification circuit senses the target data.
G11C 11/4091 - Amplificateurs de lecture ou de lecture/rafraîchissement, ou circuits de lecture associés, p.ex. pour la précharge, la compensation ou l'isolation des lignes de bits couplées
G11C 11/4097 - Organisation de lignes de bits, p.ex. configuration de lignes de bits, lignes de bits repliées
32.
METHOD AND APPARATUS FOR PERFORMING HANDOVER IN WIRELESS COMMUNICATION SYSTEM
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Yoo, Seungbo
Kim, Daejoong
Chang, Hoon
Jeon, Namryul
Abrégé
The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). A handover method for a terminal according to one embodiment of the present disclosure may include: receiving, from a source cell, a message including information on one or more target cells for performing a fast handover; and performing a fast handover by reusing a radio bearer based on the received information.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Kwon, Soonheung
Kim, Hosaeng
Shin, Ahyun
Yun, Sumin
Lee, Hyungjoo
Abrégé
An electronic device includes a substrate including a ground layer; and a plurality of antenna structures space apart from each other on the substrate. Each of the plurality of antenna structures may include, on the substrate: a rectangular first conductive patch including a pair of cutting portions in which diagonally opposite corners are cut; a rectangular second conductive patch disposed so as to be coupled to the first conductive patch; and a plurality of conductive pads which are disposed along the periphery of the second conductive patch so as to be spaced apart from each other at a specified interval, and are electrically connected to the ground layer.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Song, Jongkyu
Kim, Minho
Heo, Jin
Do, Kyoungil
Song, Jooyoung
Jeon, Chanhee
Abrégé
An electro-static discharge protection device includes a substrate that includes a first well that has a first conductive type and a second well that has a second conductive type, and first to eighth diffusion regions formed on the first well and the second well. At least a portion of the diffusion regions formed in the first well are connected to a first electrode, and at least a portion of diffusion regions formed in a second well are connected to a second electrode. The contact between one of diffusion regions formed in the first well and an N well forms a trigger diode. A junction between one of diffusion regions formed in a second well and a P well forms a trigger diode. The trigger diodes are electrically connected to each other.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H02H 9/04 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension
35.
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Lee, Yeonjin
Lee, Jongmin
Abrégé
Provided is a semiconductor device including a substrate including an element region and a scribe lane region defining the element region, and one or more test element groups arranged on the substrate and including one or more test elements for characteristic evaluation and one or more test pads for applying a test signal for testing the one or more test elements, wherein all of the one or more test pads are spaced apart from the element region in a horizontal direction.
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Lee, Jongwon
Kim, Hanbeen
Park, Soonsang
Chung, Miyeoung
Abrégé
An example electronic device may include a memory storing computer-executable instructions and a processor configured to execute the instructions by accessing the memory. The instructions may cause the processor to control the electronic device receive a voice input for requesting to apply an interaction with a second entity to a first entity; obtain a graphic representation corresponding to the second entity based on the received voice input; display the obtained graphic representation on a screen area corresponding to the first entity on a display of the electronic device; and based on receiving a control input for the second entity, transmit, to an external device corresponding to the first entity, a control command, converted from the control input, for triggering an operation of the external device.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (République de Corée)
Inventeur(s)
Jeong, Wonseb
Kal, Hongju
Ro, Won Woo
Lee, Seokmin
Ko, Gun
Abrégé
A data processing system and method for accessing a heterogeneous memory system including a processing unit are provided. The heterogeneous memory system includes a memory module and high bandwidth memory (HBM) including a processing-in-memory (PIM) circuit combined with a memory controller. The memory controller is configured to detect a data array required for an arithmetic operation from a memory module or the HBM by using a border index value when the arithmetic operation is performed by the PIM circuit of the HBM and generate a memory module command set and an HBM command set using physical address spaces respectively designated in the memory module and the HBM.
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Vdovychenko, Iegor
Sapozhnik, Oleksandr
Dykyi, Vladyslav
Savin, Volodymyr
Vitiuk, Alona
Tuzhykov, Andrii
Abrégé
An electronic device and method are provided. The electronic device includes receiving a plurality of operation contexts for the wearable electronic device to perform an operation according to an operation context, designating a priority between the plurality of operation contexts, calculating a parameter related to a movement of a plurality of cameras to perform an operation context having a top priority, and changing a combined field-of-view (FoV) and overlapping area formed by the plurality of cameras based on the movement of the plurality of cameras, wherein the plurality of cameras are configured to moved, independently.
G06T 19/00 - Transformation de modèles ou d'images tridimensionnels [3D] pour infographie
H04N 23/61 - Commande des caméras ou des modules de caméras en fonction des objets reconnus
H04N 23/69 - Commande de moyens permettant de modifier l'angle du champ de vision, p. ex. des objectifs de zoom optique ou un zoom électronique
H04N 23/695 - Commande de la direction de la caméra pour modifier le champ de vision, p. ex. par un panoramique, une inclinaison ou en fonction du suivi des objets
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Kim, Taegwang
Ha, Dongwoo
Kwon, Kihwan
Hong, Seokman
Abrégé
A cleaner head is provided. The cleaner head includes: a nozzle; a case disposed close to an inlet of the nozzle; and a brush rotatably disposed in the case, wherein the case includes an air passage groove disposed in an outer side surface of the case and having a passage formed for the air to flow from an edge region of the case toward a surface to-be-cleaned.
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Knarr, Duncan
Mchugh, Andrew R.
Yoon, Seokhyun
Abrégé
A system and method for controlling presentation on a foldable display of an electronic device is provided. A foldable electronic device comprises a foldable housing including a hinge structure, a first housing structure and a second housing structure foldable and unfoldable with respect to the first housing structure about the hinge structure. The electronic device includes a processor and a memory to store instructions that cause the processor to receive a first user input to select an application program; detect a change from a folded state to an unfolded state; determine whether the selected application program has user interface size restrictions; and in the unfolded state, display a user interface of the selected application on at least a portion of the foldable display, based in part on the screen size restriction.
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
G06F 1/16 - TRAITEMENT ÉLECTRIQUE DE DONNÉES NUMÉRIQUES - Détails non couverts par les groupes et - Détails ou dispositions de structure
41.
ELECTRONIC DEVICE FOR CHANGING AUDIO SIGNAL BASED ON INFORMATION RELATED TO VISUAL OBJECT AND METHOD THEREOF
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Lee, Sanghoon
Kim, Seonmi
Moon, Hangil
Bang, Kyoungho
Yang, Jaemo
Abrégé
An electronic device obtains acoustic signals through a plurality of microphones of a microphone array, while displaying a visual object on a display. The electronic device obtains first information related to propagated characteristics of the acoustic signals in a space where the microphone array is provided, based on the obtained acoustic signals. The electronic device changes an audio signal corresponding to the visual object based on the first information and second information for displaying the visual object in the display. The electronic device provides the changed audio signal using a speaker.
Samsung Electronics Co., Ltd. (République de Corée)
Seoul National University R&DB Foundation (République de Corée)
Industry Academic Cooperation Foundation, Chosun University (République de Corée)
Inventeur(s)
No, Jong-Seon
Lee, Yongwoo
Kim, Young-Sik
Abrégé
A processor-implemented method with homomorphic encryption includes: receiving a first ciphertext corresponding to a first modulus; generating a second ciphertext corresponding to a second modulus by performing modulus raising on the first ciphertext; and performing bootstrapping by encoding the second ciphertext using a commutative property and an associative property of operations included in a rotation operation.
G06F 7/76 - Dispositions pour le réagencement, la permutation ou la sélection de données selon des règles prédéterminées, indépendamment du contenu des données
H04L 9/00 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité
H04L 9/06 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité l'appareil de chiffrement utilisant des registres à décalage ou des mémoires pour le codage par blocs, p.ex. système DES
43.
ALL-SOLID BATTERY AND METHOD OF MANUFACTURING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Roev, Victor
Kim, Jusik
Lee, Myungjin
Abrégé
An all-solid battery including a cathode including a cathode active material layer; an anode including an anode current collector, and an interlayer disposed on the anode current collector; and a solid electrolyte layer disposed between the cathode and the anode, the solid electrolyte layer including a porous first surface facing the anode, and an opposite second surface, wherein the interlayer of the anode faces the solid electrolyte layer, and the interlayer includes a water-soluble first layer and a second layer disposed on the first layer, the second layer facing the anode current collector, wherein the first layer includes a first binder on at least a portion of the porous first surface of the solid electrolyte layer, and wherein the second layer includes an organic second binder.
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
A semiconductor device includes; a substrate including an active region including a first region and a second region, a bitline extending in a first direction on the substrate and electrically connected to the first region of the active region, a spacer structure disposed on a side surface of the bitline, a contact structure disposed on a side surface of the spacer structure and electrically connected to the second region of the active region and a data storage structure disposed on the contact structure and electrically connected to the contact structure. The contact structure includes; a conductive contact layer including a first portion and a second portion disposed on the first portion, a barrier layer surrounding the first portion of the conductive contact layer, and an air gap surrounding the second portion of the conductive contact layer.
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Jin, Seungri
Kim, Donggun
Kim, Soenghun
Sayenko, Alexander
Abrégé
The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. The present invention suggests a method and an operation for configuring a PDCP layer and a service data association protocol (SDAP) layer, thereby facilitating an efficient flow-based QoS process.
Samsung Electronics Co., Ltd. (République de Corée)
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY (République de Corée)
Inventeur(s)
Chun, Junghoon
Kim, Jaenam
Park, Sanghyeon
Abrégé
An example embodiment of the present invention provides a semiconductor device including: an encoder configured to receive a plurality of bit data by dividing the plurality of bit data into first group data and second group data, the plurality of bit data being divided into 2-bit units, to delay the second group data for a first period, and to output the first group data and the delayed second group data; and an output driver configured to output the first group data and the delayed second group data together to an external semiconductor device.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Ahn, Duhyoung
Kang, Minseok
Moon, Sungwook
Hong, Yongjin
Abrégé
Provided is a semiconductor package including a three-dimensional (3D) stacked structure in which an upper second semiconductor chip is stacked on a lower first semiconductor chip. In the semiconductor package, a power distribution network for the first semiconductor chip and a power distribution network for the second semiconductor chip are implemented through circuits of the first semiconductor chip and separated from the first semiconductor chip.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Han, Hyesung
Kim, Bupmyoung
Kim, Sungho
Abrégé
A display apparatus includes a display panel having a curvature, a plurality of chip-on-films connected to a side of the display panel, a first printed circuit board (PCB) connected to a first part of the plurality of chip-on-films, and a second PCB provided farther outside of the display panel than the first PCB from a center of the display panel, the second PCB being connected to a second part of the plurality of chip-on-films, and a number of chip-on-films of the second part of the plurality of chip-on-films is different than a number of chip-on-films of the first part of the plurality of chip-on-films.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Rupavatharam, Siddharth
Howard, Richard
Lee, Daewon
Jackel, Lawrence
Escobedo, Caleb Sebastian
Isler, Ibrahim Volkan
Abrégé
In some embodiments, an apparatus for performing reactive positioning of a robot gripper includes one or more fingers disposed on an end-effector of the robot, a signal processing circuit, a memory storing instructions, and a processor. Each of the one or more fingers includes a transducer configured to generate vibrational energy based on an input signal, and convert an acoustic reflection of the vibrational energy from an object into a voltage signal. The signal processing circuit is configured to provide the input signal to each transducer, and perform signal processing on the voltage signal of each transducer resulting in reflection data. The processor is configured to execute the instructions to perform pre-touch proximity detection on the reflection data, perform grasp positioning on the reflection data, perform contact detection from the reflection data, and provide, to the robot, results of the pre-touch proximity detection, the grasp positioning, and the contact detection.
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Chu, Jungho
Kim, Shihyun
Park, Seonyoung
Park, Tari
Jang, Kiyoun
Jung, Sinyoung
Abrégé
An electronic device may include a processor, and a battery configured to supply power to the processor. The battery may include multiple first electrodes including first tabs configured to protrude toward a first direction, multiple second electrodes including second tabs configured to protrude toward the first direction, and a separator configured to restrict contact between the multiple first electrodes and the multiple second electrodes. The separator may include a first separator configured to be folded in a second direction perpendicular to the first direction or a fourth direction opposite to the second direction, the first separator including multiple through-holes configured to accommodate the first tabs and the second tabs, and a second separator configured to be folded in the first direction or a third direction opposite to the first direction, the second separator being alternately stacked with the first separator. In addition, various embodiments may be possible.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Kim, Junseok
Kim, Raeyoung
Park, Keunjoo
Park, Jaeha
Park, Junhyuk
Im, Jiwon
Abrégé
A pixel of a vision sensor includes a photoelectric converter configured to convert an optical signal into a current, a current-to-voltage converter configured to convert the current into a first voltage, an amplifier configured to generate an output voltage by amplifying a voltage level of the first voltage, at least one comparator configured to identify whether an event occurs based on comparing the output voltage with at least one threshold voltage, and generate an event signal based on identifying that the event occurs, and at least one counter configured to receive the event signal from the at least one comparator, obtain a count value by counting the event signal as information about an amount of change in illumination, and transmit output data comprising the count value.
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixel; Capteurs d'images commandés par événement; Sélection des pixels à lire en fonction des données d'image
H04N 25/77 - Circuits de pixels, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
52.
PHASE LOCKED LOOP CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Lee, Kyung Min
Kim, Gyu Sik
Kim, Seung Jin
Jung, Jae Hong
Abrégé
A phase locked loop circuit and a semiconductor device are provided. The phased locked loop circuit includes a reference current generator configured to generate a summed compensation current in which at least one of a process change, a temperature change or a power supply voltage change are compensated and output the summed compensation current as a reference current, a current digital-to-analog converter configured to convert the reference current into a control current in accordance with a digital code and a voltage control oscillator configured to generate a signal based on the control current, wherein the summed compensation current is based on weighted-averaging a first type compensation current and a second type compensation current in response to at least one of the process change, the temperature change or the power supply voltage change.
H03L 7/093 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence y compris le filtrage ou l'amplification de son signal de sortie utilisant des caractéristiques de filtrage ou d'amplification particulières dans la boucle
H03L 1/00 - Stabilisation du signal de sortie du générateur contre les variations de valeurs physiques, p.ex. de l'alimentation en énergie
H03L 7/099 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
53.
SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Yim, Choong Bin
Park, Ji Yong
Shim, Jong Bo
Abrégé
A semiconductor package includes a first package substrate having a first area and a second area that is distinct and separate from the first area, a first connection element disposed on the first area and having a first thickness, a first semiconductor chip connected to the first connection element, a second connection element disposed on the second area and having a second thickness that is greater than the first thickness, a third connection element disposed on the second connection element and electrically connected to the second connection element, a second package substrate disposed on the third connection element, and a second semiconductor chip disposed on the second package substrate.
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 25/10 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés
H10B 80/00 - Ensembles de plusieurs dispositifs comprenant au moins un dispositif de mémoire couvert par la présente sous-classe
54.
PHASE-CHANGE MEMORY STRUCTURE AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Lee, Changseung
Yang, Kiyeon
Kang, Youngjae
Sung, Hajun
Ahn, Dongho
Abrégé
A phase-change memory structure includes lower and upper electrodes spaced apart from each other, and a phase-change material stack between the lower and upper electrodes. The phase-change material stack includes a plurality of phase-change layers, at least two phase-change layers of the plurality of phase-change layers have different phase-change temperatures, and a plurality of barrier layers between the plurality of phase-change layers The at least two phase-change layers of the plurality of phase-change layers have different thicknesses.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Nam, Woohyun
Kim, Kyungrae
Kim, Jungkyu
Ko, Sangchul
Son, Yoonjae
Lee, Tammy
Chung, Hyunkwon
Hwang, Sunghee
Abrégé
A method of matching a voice for each object included in a video, includes: separating a plurality of voices in a video; determining a dissimilarity between the plurality of voices; selecting a partial duration in an entire duration of the video as a matching duration, based on the dissimilarity between the plurality of voices; matching, within the matching duration, the plurality of voices with a plurality of objects in the video respectively, based on mouth movements of the plurality of objects; and matching the plurality of voices with the plurality of objects respectively in the entire duration of the video, based on results of the matching between the plurality of voices and the plurality of objects within the matching duration.
G10L 25/57 - Techniques d'analyses de la parole ou de la voix qui ne se limitent pas à un seul des groupes spécialement adaptées pour un usage particulier pour comparaison ou différentiation pour le traitement des signaux vidéo
G10L 15/25 - Reconnaissance de la parole utilisant des caractéristiques non acoustiques utilisant la position des lèvres, le mouvement des lèvres ou l’analyse du visage
G11B 27/031 - Montage électronique de signaux d'information analogiques numérisés, p.ex. de signaux audio, vidéo
56.
SEMICONDUCTOR MEMORY DEVICES HAVING ADJUSTABLE I/O SIGNAL LINE LOADING THAT SUPPORTS REDUCED POWER CONSUMPTION DURING READ AND WRITE OPERATIONS
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Lee, Seung-Jun
Kim, Sang-Yun
Kim, Jonghyuk
Won, Bok-Yeon
Abrégé
A semiconductor memory device includes a memory bank arranged into first through nth split regions containing at least one memory cell sub-array within each split region, and first through nth global input/output (GIO) split lines electrically coupled to the first through nth split regions. First through n-lth connection control transistors are provided, which have gate terminals responsive to respective connection control signals. The first connection control transistor is configured to electrically short the first and second GIO split lines together when enabled by a corresponding connection control signal, and the n-1th connection control transistor is configured to electrically short the n-1th and nth GIO split lines together when enabled by a corresponding connection control signal. A GIO sense amplifier is provided, which is electrically coupled to the memory bank. A control circuit is provided, which is configured to reduce I/O signal line power consumption within the memory device during read (and write) operations.
G11C 11/4091 - Amplificateurs de lecture ou de lecture/rafraîchissement, ou circuits de lecture associés, p.ex. pour la précharge, la compensation ou l'isolation des lignes de bits couplées
G11C 11/4074 - Circuits d'alimentation ou de génération de tension, p.ex. générateurs de tension de polarisation, générateurs de tension de substrat, alimentation de secours, circuits de commande d'alimentation
G11C 11/4093 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. mémoires tampon de données
57.
ELECTRONIC DEVICE FOR CHARGING SERVICE USE DEVICE, AND OPERATION METHOD THEREFOR
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Lee, Yangdon
Kwon, Taejun
Abrégé
Provided is an electronic device configured to charge at least one charging service use device and an operating method thereof. An embodiment of the present disclosure provides an electronic device configured to receive charging state information including at least one of device identification information, charging specifications, a current remaining battery capacity, and an expected discharge time from at least one charging service use device, generate a charging schedule for charging the at least one charging service use device based on a remaining capacity of a built-in battery and the received charging state information, move to a location of a charging target device determined based on the charging schedule, and supply power stored in the built-in battery to the charging target device by connecting to a charging terminal of the charging target device to charge the charging target device.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Park, Jungmin
Jeon, Intak
Lim, Hanjin
Jung, Hyungsuk
Abrégé
A capacitor structure includes a first lower conductive pattern, a first capacitor, a first upper conductive pattern, a second lower conductive pattern, a second capacitor and a second upper conductive pattern. The first capacitor includes first lower electrodes, first upper electrodes and first dielectric structures. Each of the first dielectric structures are disposed between one of the first lower electrodes and a corresponding one of the first upper electrodes. The first upper conductive pattern is formed on and is electrically connected to the first upper electrodes. The second lower conductive pattern is spaced apart from the first lower conductive pattern disposed on the substrate. The second capacitor includes second lower electrodes, second upper electrodes and second dielectric structures. The second upper conductive pattern is formed on and is electrically connected to the second upper electrodes. The first and second conductive patterns are electrically insulated from each other.
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Zhang, Sa
Sun, Feifei
Abrégé
The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. A method performed by a terminal in a wireless communication system is provided. The method includes receiving, from a base station on a first cell, first downlink control information (DCI) for scheduling multiple physical downlink shared channels (PDSCHs) on first multiple cells and receiving, from the base station, the multiple PDSCHs on the first multiple cells based on the first DCI. at least one CRC of the first DCI is scrambled with at least one of a cell radio network temporary identifier (C-RNTI) or a modulation coding scheme (MCS)-C-RNTI
H04W 72/232 - Canaux de commande ou signalisation pour la gestion des ressources dans le sens descendant de la liaison sans fil, c. à d. en direction du terminal les données de commande provenant de la couche physique, p.ex. signalisation DCI
60.
LAYOUT DESIGN METHOD AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Choi, Dawoon
Lee, Inseop
Jeong, Hee
Kim, Bongkeun
Noh, Myungsoo
Abrégé
Provided is a layout design method including designing a preliminary layout including a source/drain contact pattern of an integrated circuit device, designing a first layout including a cut pattern for cutting the source/drain contact pattern, designing a second layout configured by excluding a pattern overlapping the pattern of the first layout from the preliminary layout, and correcting the preliminary layout by reflecting an etch skew based on at least one parameter of the second layout.
G06F 30/398 - Vérification ou optimisation de la conception, p.ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G03F 1/36 - Masques à correction d'effets de proximité; Leur préparation, p.ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G06F 30/392 - Conception de plans ou d’agencements, p.ex. partitionnement ou positionnement
61.
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Park, Seokbong
Park, Sechul
Kang, Unbyoung
An, Junhyun
Yun, Hyojin
Chae, Seunghun
Abrégé
A semiconductor package includes a first redistribution structure, a first semiconductor chip on the first redistribution structure, a first molding layer on the first redistribution structure, the first molding layer including at least one lower recess in a top surface thereof and being disposed on the first semiconductor chip, connection structures on the first redistribution structure, the connection structures extending in a vertical direction and passing through the first molding layer, a first insulating layer on the first molding layer, and a second redistribution structure including a lower redistribution insulating layer on the first insulating layer, wherein the first insulating layer at least partially fills the at least one lower recess of the first molding layer.
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 25/10 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Lee, Kanggyune
Lee, Sangwon
Choi, Woojin
Abrégé
A semiconductor package includes a package substrate, a first semiconductor chip on the package substrate, a sealing layer on the package substrate and at least partially covering the first semiconductor chip and including an upper surface, a first side surface, and a first inclined surface extending between the upper surface and the first side surface, and a first marking pattern in or on the first inclined surface of the sealing layer.
H01L 23/544 - Marques appliquées sur le dispositif semi-conducteur, p.ex. marques de repérage, schémas de test
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p.ex. dissipateurs de chaleur
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Jeon, Jongmin
Lim, Hajin
Kim, Keewon
Yoon, Kijoong
Jeon, Taeksoo
Hur, Jsesung
Abrégé
An image sensor includes a light detector disposed on a substrate and including a plurality of light sensing cells, an interlayer device disposed on the light detector and configured to transmit a light, and a nano prism including a first nano post and a second nano post spaced apart from each other on the interlayer device and configured to condense a light onto the light detector, the first nano post includes a first refractive layer doped with aluminum at a first doping concentration, and a second refractive layer surrounding a bottom surface and a side surface of the first refractive layer and doped with aluminum at a second doping concentration, and the first doping concentration is higher than the second doping concentration.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Choi, Heejin
Abrégé
An image acquisition apparatus includes a multispectral imaging sensor for acquiring images of at least four channels based on a wavelength band of about 10 nm to about 1000 nm and a processor for setting an exposure time for each of the four channels based on transmission efficiency and quantum efficiency for each wavelength of each of the four channels and generating an HDR image using image signals corresponding to the four channels and obtained according to the set exposure time.
H04N 23/11 - Caméras ou modules de caméras comprenant des capteurs d'images électroniques; Leur commande pour générer des signaux d'image à partir de différentes longueurs d'onde pour générer des signaux d'image à partir de longueurs d'onde de lumière visible et infrarouge
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Jeong, Seungsoo
Park, Minwoo
Abrégé
Provided is a video decoding method including: obtaining, from a sequence parameter set, sequence merge mode with motion vector difference (sequence MMVD) information indicating whether an MMVD mode is applicable in a current sequence; when the MMVD mode is applicable according to the sequence MMVD information, obtaining, from a bitstream, first MMVD information indicating whether the MMVD mode is applied in a first inter prediction mode for a current block included in the current sequence; when the MMVD mode is applicable in the first inter prediction mode according to the first MMVD information, reconstructing a motion vector of the current block which is to be used in the first inter prediction mode, by using a distance of a motion vector difference and a direction of a motion vector difference obtained from the bitstream; and reconstructing the current block by using the motion vector of the current block.
H04N 19/523 - Estimation ou compensation du mouvement avec précision supérieure au sous-pixel
H04N 19/103 - Sélection du mode de codage ou du mode de prédiction
H04N 19/176 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant le codage adaptatif caractérisés par l’unité de codage, c. à d. la partie structurelle ou sémantique du signal vidéo étant l’objet ou le sujet du codage adaptatif l’unité étant une zone de l'image, p.ex. un objet la zone étant un bloc, p.ex. un macrobloc
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Lee, Jeon Il
Lee, Kyunghwan
Abrégé
A semiconductor memory device includes first through structures on a substrate, the first through structures arranged in a first direction, an electrode adjacent to the first through structures and extending horizontally in the first direction along the first through structures, and a ferroelectric layer interposed between the electrode and the first through structures. Each of the first through structures includes a first conductive pillar and a second conductive pillar spaced apart from each other in the first direction, a channel layer extending from a sidewall of the first conductive pillar to a sidewall of the second conductive pillar, the channel layer interposed between the ferroelectric layer and the first and second conductive pillars, the first and second conductive pillars being spaced apart from each other in the first direction and defining a first air gap. Adjacent ones of the first through structures define a second air gap.
H10B 51/20 - Dispositifs de RAM ferro-électrique [FeRAM] comprenant des transistors ferro-électriques de mémoire caractérisés par les agencements tridimensionnels, p ex. avec des cellules à des niveaux différents de hauteur
H10B 51/30 - Dispositifs de RAM ferro-électrique [FeRAM] comprenant des transistors ferro-électriques de mémoire caractérisés par la région noyau de mémoire
H10B 51/40 - Dispositifs de RAM ferro-électrique [FeRAM] comprenant des transistors ferro-électriques de mémoire caractérisés par la région de circuit périphérique
67.
METHOD AND APPARATUS FOR MEASUREMENT REPORTING OF UNCREWED AERIAL VEHICLE TERMINAL IN NON-TERRESTRIAL NETWORK
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Jung, Sangyeob
Agiwal, Anil
Abrégé
The present disclosure relates to a 5G communication system or a 6G communication system for supporting higher data rates beyond a 4G communication system such as long term evolution (LTE). Methods and devices are provided in a wireless communication system. Configuration information on a measurement report is received from a base station. The configuration information includes first information on a first number of triggering cells. A first measurement report for at least one first cell fulfilling an entry condition is transmitted to the base station, in case that a second number of the at least one first cell is larger than or equal to the first number of triggering cells. A second measurement report for at least one second cell fulfilling a leaving condition is transmitted to the base station. The at least one second cell is in the first measurement report.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Lee, Seunghoon
Moon, Heecheul
Son, Kwonho
Yoon, Byounguk
Abrégé
An electronic device includes a hinge, a first housing and a second housing rotatably connected to each other by the hinge, a flexible display disposed in the first housing and the second housing, a first circuit board disposed in the first housing, a flexible circuit board which is electrically connected to the first circuit board and extends from the first housing and across the hinge, and a slide structure which is connected to the flexible circuit board and is slidably connected with the first housing, wherein the slide structure slides together with a portion of the flexible circuit board in the first housing while the electronic device is being folded or unfolded via the hinge.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Kim, Hyungjin
Seo, Minhwan
Joo, Wondon
Chu, Jiyoung
Bae, Sangwoo
Ahn, Sungmin
Oh, Seungyeol
Lee, Jungyu
Abrégé
The optical device includes an illuminator configured to emit illumination light in a first horizontal direction, a polarizing prism configured to polarize the illumination light incident thereto through a first surface thereof in the first horizontal direction, a first reflector and a second reflector, each configured to reflect the illumination light from the polarizing prism, and a first lens and a second lens configured to condense the illumination light reflected from the first and second reflectors, respectively.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
G02B 5/30 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES Éléments optiques autres que les lentilles Éléments polarisants
G02B 27/09 - Mise en forme du faisceau, p.ex. changement de la section transversale, non prévue ailleurs
G02B 27/28 - Systèmes ou appareils optiques non prévus dans aucun des groupes , pour polariser
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
70.
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Kim, Junhyoung
Kwon, Joonyoung
Kim, Jiyoung
Kim, Jinhyuk
Sung, Sukkang
Abrégé
A semiconductor device includes a gate electrode structure, a first division pattern, and a memory channel structure. The gate electrode structure includes gate electrodes stacked in a first direction and extending in a second direction. The first division pattern extends in the second direction through the gate electrode structure, and divides the gate electrode structure in a third direction. The memory channel structure extends through the gate electrode structure, and includes a channel and a charge storage structure. The first division pattern includes first and second sidewalls opposite to each other in the third direction. First recesses are spaced apart from each other in the second direction on the first sidewall, and second recesses are spaced apart from each other in the second direction on the second sidewall. The first and second recesses do not overlap in the third direction.
H10B 43/27 - Dispositifs EEPROM avec des isolants de grille à piégeage de charge caractérisés par les agencements tridimensionnels, p ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p.ex. avec des canaux inclinés les canaux comprenant des parties verticales, p.ex. des canaux en forme de U
71.
METHOD AND APPARATUS FOR MANAGING INFORMATION IN A WIRELESS COMMUNICATION SYSTEM
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Wang, Weiwei
Wang, Hong
Xu, Lixiang
Abrégé
The present disclosure provides an information configuration method, an information interaction method, and an address information update method. The information configuration method may be performed by a first node, and may include: transmitting, to a second node, a first configuration request message comprising a request for a bearer context setup; receiving, from the second node, a first configuration response message comprising a response to the bearer context setup request in the first configuration request message; and establishing a bear context based on the first configuration response message, wherein the first configuration request message comprises at least one of information related to data profile, or profile indication information.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Kim, Gahee
Cho, Joon-Kee
Choi, Hyun Do
Choi, Younsuk
Kim, Jeonghun
Park, Sooyoung
Abrégé
An apparatus for measuring solubility includes: a display configured to display at least one patterned background image; an image obtaining sensor configured to obtain at least one transmission image formed by light from the at least one patterned background image being transmitted through a container accommodating a target sample, of which solubility is to be measured; and a processor configured to analyze a degree of dissolution of the target sample from the at least one transmission image based on at least one analysis algorithm.
G06V 10/25 - Détermination d’une région d’intérêt [ROI] ou d’un volume d’intérêt [VOI]
G06V 10/28 - Quantification de l’image, p.ex. seuillage par histogramme visant à discriminer entre les formes d’arrière-plan et d’avant-plan
G06V 10/62 - Extraction de caractéristiques d’images ou de vidéos relative à une dimension temporelle, p.ex. extraction de caractéristiques axées sur le temps; Suivi de modèle
73.
METHOD AND APPARATUS FOR ACCESS CONTROL OF UE THROUGH MBSR-UE IN COMMUNICATION SYSTEM
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Kumar, Lalith
Agarwal, Aman
Tiwari, Avneesh
Jha, Kailash Kumar
Abrégé
A method for access control of a UE (120) connecting through a Mobile base station relay (MBSR)-UE (122) in a wireless network (1000) by an IAB-Donor gNB (108). The method includes connecting the UE (120) to the IAB-Donor gNB (108) through a first MBSR-UE (122) to receive an emergency service in the wireless network. Further, the method includes determining that the first MBSR-UE (122a) is about to become unavailable to provide the emergency service to the UE (120) in the wireless network. Further, the method includes transmitting a handover request message to the UE (120) to perform an handover procedure to move the UE (120) to a NG-RAN node (104) before the first MBSR-UE (122a) becomes unavailable in the wireless network upon determining that the first MBSR-UE (122a) is about to become unavailable.
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Shim, Heesung
Kim, Seungsik
Lee, Jaekyu
Lim, Seunghyun
Jun, Sungjae
Abrégé
An image sensor comprising a pixel array in which a plurality of pixels are arranged and a row driver . Each of the pixel includes a photodiode, a transfer transistor for transferring photocharges of the photodiode to a floating diffusion node (FD), a conversion gain control transistor, a first source follower for amplifying and outputting the voltage of the FD to a first node, a precharge selection transistor connected between the first node and a second node, a first capacitor, a first sampling transistor connected between the second node and the first capacitor, a second capacitor, a second sampling transistor connected between the second node and the second capacitor, a second source follower for amplifying a voltage of the second node, a first selection transistor connected between the second source follower and a column line, and a second selection transistor connected between the first node and the column line.
H04N 25/771 - Circuits de pixels, p.ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des moyens de stockage autres que la diffusion flottante
H04N 23/667 - Changement de mode de fonctionnement de la caméra, p. ex. entre les modes photo et vidéo, sport et normal ou haute et basse résolutions
H04N 25/531 - Commande du temps d'intégration en commandant des obturateurs déroulants dans un capteur SSIS CMOS
H04N 25/532 - Commande du temps d'intégration en commandant des obturateurs globaux dans un capteur SSIS CMOS
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Ding, Shaofeng
Ahn, Jeong Hoon
Choi, Yun Ki
Abrégé
A semiconductor device includes a substrate provided with an integrated circuit and a contact, an interlayer dielectric layer covering the integrated circuit and the contact, a through electrode penetrating the substrate and the interlayer dielectric layer, a first intermetal dielectric layer on the interlayer dielectric layer, and first and second wiring patterns in the first intermetal dielectric layer. The first wiring pattern includes a first conductive pattern on the through electrode, and a first via penetrating the first intermetal dielectric layer and connecting the first conductive pattern to the through electrode. The second wiring pattern includes a second conductive pattern on the contact, and a second via penetrating the first intermetal dielectric layer and connecting the second conductive pattern to the contact. A first width in a first direction of the first via is greater than a second width in the first direction of the second via.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/528 - Configuration de la structure d'interconnexion
76.
FRAME STRUCTURE SUITABLE FOR TERAHERTZ-BAND-BASED COMMUNICATION ENVIRONMENT
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Park, Yosub
Lee, Hyojin
Kim, Hanjin
Lee, Seunghyun
Lee, Juho
Abrégé
The present disclosure relates to a 5G or 6G communication system for supporting a data transmission rate higher than that of a 4G communication system, such as LTE. According to one embodiment of the present disclosure, a base station of a communication system confirms a subcarrier spacing in which a signal is to be transmitted to or received from a terminal, transmits, to the terminal, a signal including information that indicates the allocation of additional symbols and/or the number of additional symbols, generates data allocation information for data on the basis of the allocation of the additional symbols, and transmits the data allocation information and the data to the terminal, wherein the additional symbols can be allocated to the predetermined part of a first slot at every 0.5 ms of boundary.
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Lee, Hoyeon
Jeong, Sangsoo
Abrégé
The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method for replacement of a DNN and/or S-NSSAI in a wireless communication system is provided.
H04W 48/18 - Sélection d'un réseau ou d'un service de télécommunications
H04L 69/327 - Protocoles de communication intra-couche entre entités paires ou définitions d'unité de données de protocole [PDU] dans la couche session [couche OSI 5]
H04W 60/04 - Rattachement à un réseau, p.ex. enregistrement; Suppression du rattachement à un réseau, p.ex. annulation de l'enregistrement utilisant des événements déclenchés
78.
ELECTRONIC DEVICE HAVING STRUCTURE FOR GENERATING SOUND THROUGH VIBRATION OF DISPLAY
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Lee, Seunghoon
Choi, Youngsik
Abrégé
According to various embodiments, an electronic device may include: a housing including a first housing oriented in a first direction and a second housing oriented in a second direction that is opposite to the first direction; a display disposed on the surface of the first housing oriented in the first direction; a window disposed on the surface of the display oriented in the first direction; a first adhesive member disposed along the edge of the surface of the display oriented in the second direction, such that the edge of the surface of the display oriented in the second direction is adhered to the surface of the first housing oriented in the first direction; and an actuator which is to positioned in the inner space of the housing so as to he positioned more on the second direction side than the display, and which generates sound by vibrating the display.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Yun, Sangwon
Ma, Jaegyeong
Abrégé
The present disclosure relates to a cooking apparatus including an outer housing, an inner housing positioned inside the outer housing to provide a cooking chamber, a door provided in front of the inner housing to open and close the cooking chamber, a vent fan positioned in a separation space formed between the outer housing and the inner housing and including a discharge port to flow air through the discharge port, an electrical component located on a route along which air flowing by the vent fan moves, and an electrical component cover including an electrical component cover body provided to surround the electrical component to protect the electrical component from the air flowing by the vent fan.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Hwang, Donghoon
Kang, Myungil
Gwak, Minchan
Kim, Kyungho
Cho, Kyung Hee
Choi, Doyoung
Abrégé
A three-dimensional semiconductor device includes a first active region on a substrate, the first active region including a lower channel pattern and a lower source/drain pattern connected to the lower channel pattern, a second active region stacked on the first active region, the second active region including an upper channel pattern and an upper source/drain pattern connected to the upper channel pattern, a gate electrode on the lower channel pattern and the upper channel pattern, a lower contact electrically connected to the lower source/drain pattern, the lower contact having a bar shape extending on the lower source/drain pattern in a first direction, a first active contact coupled to the lower contact, and a second active contact coupled to the upper source/drain pattern. A first width of the lower source/drain pattern in a second direction is larger than a second width of the lower contact in the second direction.
H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
H01L 21/822 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une technologie au silicium
H01L 21/8238 - Transistors à effet de champ complémentaires, p.ex. CMOS
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/775 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à une dimension, p.ex. FET à fil quantique
81.
METHOD AND APPARATUS FOR OPERATING MEMORY PROCESSOR
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Chang, Dong-Jin
Kwon, Soon-Wan
Yun, Seok Ju
Lee, Jaehyuk
Myung, Sungmeen
Yoon, Daekun
Abrégé
Provided is a computation method of a memory processor configured to perform an operation between a first vector including first elements and a second vector including second elements, the first elements including respective first bits and the second elements including respective second bits, the method performed by the memory processor including: applying, to single-bit operation gates, the respective first bits and the respective second bits; obtaining bit operation result sum values for the respective first and second elements based on bit operation results obtained using the single-bit operation gates; and obtaining an operation result of the first vector and the second vector based on the bit operation result sum value.
G06F 7/507 - Addition; Soustraction en mode parallèle binaire, c. à d. ayant un circuit de maniement de chiffre différent pour chaque position avec génération simultanée de retenue pour plusieurs étages ou propagation simultanée de retenue sur plusieurs étages utilisant la sélection entre deux valeurs de retenue ou de somme calculées de façon conditionnelle
G06F 7/504 - Addition; Soustraction en mode série binaire, c. à d. ayant un seul circuit de maniement de chiffre, traitant toutes les positions l'une après l'autre
G06F 7/544 - Méthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p.ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs non spécifiés pour l'évaluation de fonctions par calcul
82.
DUAL SOURCE DRIVERS, DISPLAY DEVICES HAVING THE SAME, AND METHODS OF OPERATING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Lee, Sungho
Rho, Hohak
Lee, Junjae
Abrégé
A dual source driver includes first and second gamma voltage generators configured to generate first and second gamma voltages, respectively, first and second latches configured to latch first and second data, respectively, a first driving cell configured to receive the first gamma voltage and the first data, and to transmit a first voltage corresponding to the first data and the first gamma voltage to a panel load based on a first switching operation, and a second driving cell configured to receive the second gamma voltage and the second data, and to transmit a second voltage corresponding to the second data and the second gamma voltage to the panel load based on a second switching operation. The first switching operation and the second switching operation may operate complementarily to each other.
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p.ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Jang, Sunghwan
Kim, Dohee
Moon, Pyung
Jang, Sunguk
Seol, Mina
Abrégé
In a method of manufacturing a semiconductor device, a first selective epitaxial growth (SEG) process is performed on a substrate to form a first channel. A first etching process is performed to form a first recess through the first channel and an upper portion of the substrate. A sidewall of the first channel exposed by the first recess is slanted with respect to an upper surface of the substrate. A second SEG process is performed to form a second channel on a surface of the substrate and the sidewall of the first channel exposed by the first recess. A gate structure is formed to fill the first recess. An impurity region is formed at an upper portion of the substrate adjacent to the gate structure.
Samsung Electronics Co., Ltd. (République de Corée)
Inventeur(s)
Lim, Cheolhwan
Yeo, Hwanseok
Abrégé
A proportional-to-absolute-temperature current generating device includes a differential difference amplifier (DDA) that outputs a comparison signal based on a reference voltage, a first voltage, and a second voltage, a current source that generates a first current and a second current based on the comparison signal, a proportional-to-absolute-temperature voltage (VPTAT) generating unit that generates the first voltage based on the first current, and a complementary-to-absolute-temperature voltage (VCTAT) generating unit that generates the second voltage based on the second current. Each of the first current and the second current is a proportional-to-absolute-temperature current that increases in proportion to a temperature of the proportional-to-absolute-temperature current generating device.
G05F 3/24 - Régulation de la tension ou du courant là où la tension ou le courant sont continus utilisant des dispositifs non commandés à caractéristiques non linéaires consistant en des dispositifs à semi-conducteurs en utilisant des combinaisons diode-transistor dans lesquelles les transistors sont uniquement du type à effet de champ
G05F 1/46 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu
G05F 1/567 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final sensible à une condition du système ou de sa charge en plus des moyens sensibles aux écarts de la sortie du système, p.ex. courant, tension, facteur de puissance pour compensation de température
85.
Organometallic Compound and Organic Light-Emitting Device Including the Same
Samsung Electronics Co., Ltd. (République de Corée)
SAMSUNG SDI CO., LTD. (République de Corée)
Inventeur(s)
Min, Minsik
Kim, Sangmo
Kang, Hosuk
Kim, Wook
Nam, Sungho
Bae, Hyejin
Son, Jhunmo
Jung, Yongsik
Chwae, Jun
Abrégé
Provided are the organometallic compound represented by Formula 1 and an organic light-emitting device including the same:
Provided are the organometallic compound represented by Formula 1 and an organic light-emitting device including the same:
Provided are the organometallic compound represented by Formula 1 and an organic light-emitting device including the same:
M, X1 to X4, X11, ring CY2 to ring CY4, T1, T2, R1 to R4, and a1 to a4 in Formula 1 are the same as described in the present specification.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Bae, Kirak
Kim, Jungyoon
Abrégé
A system for displaying a security document, according to an embodiment, may comprise a first electronic device configured to, upon identifying a selection of displaying a security document, generate a noise table for protecting the security document, and transmit the noise table to a second electronic device that has established communication through a security channel, while the security document to which noise is added on the basis of the noise table is displayed on a display of the first electronic device. The system according to an embodiment may comprise the second electronic device configured to, upon receiving the noise table from the first electronic device that has established the communication through the security channel, generate a denoise table for the noise table, change a pixel value of a display of the second electronic device on the basis of the denoise table, and upon recognizing areas of the security document to which the noise is added, displayed on the display of the first electronic device, display the security document from which the noise is removed, through the display of the second electronic device, having the changed pixel value.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Jang, Youngsang
Abrégé
A wearable device according to one embodiment may comprise: a housing; an acoustic port which protrudes in a first direction from the housing and which transfers an audio signal from a sound output circuit arranged inside the housing; a fastening part inserted into a groove arranged at an end portion of the acoustic port; an extension part extending in the first direction from the fastening part; a radiating surface including openings spaced apart from the extension part; and an eartip including a wing extending from the edge of the radiating surface toward the acoustic port. The extension part includes a first raw material, and the fastening part can include a second raw material having a malleability lower than that of the first raw material.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Kim, Hyoungkwon
Kim, Dongho
Lee, Soomin
Kim, Juhong
Abrégé
One embodiment of the present invention relates to a device and a method for searching for a frequency band in an electronic device. The electronic device comprises a communication circuit and a processor, wherein the processor detects one or more frequency bands for updating a frequency search interval on the basis of search results of each of a plurality of frequency bands based on a first frequency search interval, updates, to a second frequency search interval, the frequency search interval of the one or more frequency bands, searches for each of the one or more frequency bands on the basis of the second frequency search interval, and can search for, on the basis of the first frequency search interval, one or more remaining frequency bands, that excludes the one or more frequency bands, from among the plurality of frequency bands. Other embodiments are possible.
H04W 48/16 - Exploration; Traitement d'informations sur les restrictions d'accès ou les accès
H04W 48/18 - Sélection d'un réseau ou d'un service de télécommunications
G01S 11/10 - Systèmes pour déterminer la distance ou la vitesse sans utiliser la réflexion ou la reradiation utilisant les ondes radioélectriques utilisant l'effet Doppler
H04W 88/06 - Dispositifs terminaux adapté au fonctionnement dans des réseaux multiples, p.ex. terminaux multi-mode
90.
DEVICE FOR OUTPUTTING SIMULATED VITAL SIGN AND OPERATION METHOD THEREOF
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Omelchenko, Andrii
Abrégé
Provided is a device for outputting a simulated vital sign to prevent an unauthorized external user from leaking personal information, such as a user's vital sign, and to reinforce security. The device according to an embodiment of the present disclosure may: detect a UWB scanning pulse transmitted by an external device to measure a user's vital sign in a non-contact manner; if the UWB scanning pulse is detected, simulate a virtual person's vital sign to generate a virtual vital sign; and output simulated vital sign data including the vital sign and the virtual vital sign by using a UWB antenna.
A61B 5/05 - Détection, mesure ou enregistrement pour établir un diagnostic au moyen de courants électriques ou de champs magnétiques; Mesure utilisant des micro-ondes ou des ondes radio
G06F 21/62 - Protection de l’accès à des données via une plate-forme, p.ex. par clés ou règles de contrôle de l’accès
A61B 5/00 - Mesure servant à établir un diagnostic ; Identification des individus
A61B 5/08 - Dispositifs de mesure pour examiner les organes respiratoires
A61B 5/024 - Mesure du pouls ou des pulsations cardiaques
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Nguyen, Nhat Anh
Nguyen, Van Khanh
Chu, Thi Phuong
Abrégé
The present electronic device comprises a memory, a communication interface, a display, and at least one processor which: requests a call connection to an external device via the communication interface; when a phone non-connection event stored in the memory is identified after the call connection is requested, calculates an importance level corresponding to the phone non-connection event; if the importance level is equal to or greater than a threshold, obtains state information of the electronic device indicating an application running in the electronic device; if it is identified, on the basis of the state information, that a pre-configured application is not running in the electronic device, obtains a notification time on the basis of situation information of a user of the external device; and controls the display to provide notification information indicating the phone non-connection event on the basis of the notification time.
H04M 1/72454 - Interfaces utilisateur spécialement adaptées aux téléphones sans fil ou mobiles avec des moyens permettant d’adapter la fonctionnalité du dispositif dans des circonstances spécifiques en tenant compte des contraintes imposées par le contexte ou par l’environnement
H04M 3/428 - Dispositions pour placer des appels entrants en attente
92.
METHOD AND DEVICE FOR SUPPORTING EXTENDED ACCESS POINT IN WIRELESS COMMUNICATION SYSTEM
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Wodczak, Michal
Abrégé
The present disclosure relates to a 5G or 6G communication system for supporting higher data transmission rates. This exemplary method performed by means of an access and mobility management function (AMF) node may comprise the steps of: receiving, from an extended access point (EAP), information related to EAP capabilities; extending, on the basis of the received information related to EAP capabilities, a control plane so that the EAP is included; generating an X2 interface on the basis of the number of base stations related to the AMF node and the EAP; instructing the base station to establish the X2 interface with the EAP on the basis of the generated X2 interface; and instructing the EAP to establish a connection to a terminal.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Lee, Seunghoon
Moon, Heecheul
Son, Kwonho
Yoon, Byounguk
Abrégé
According to various embodiments, an electronic device comprises: a hinge; a first housing and a second housing rotatably connected to each other by the hinge; a flexible display disposed on the first housing and the second housing; a first substrate disposed in the first housing; a flexible printed circuit board electrically connected to the first substrate and extending from the first housing across the hinge; and a slide structure slidably connecting the flexible printed circuit board to the first housing, wherein, during folding or unfolding of the electronic device through the hinge, the slide structure may slide together with a portion of the flexible printed circuit board within the first housing.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Moon, Minjeong
Moon, Yeojin
Lee, Bona
Nam, Myoungwoo
Park, Chanpyo
Lee, Seungyong
Abrégé
An electronic device according to one embodiment can acquire data from a touch sensor while a screen based on first brightness is displayed in a display. The electronic device can identify, on the basis of at least one contact point identified by means of the data and related to a touch input performed on the display, whether the touch input corresponds to a designated gesture for adjusting the first brightness of the display. The electronic device can change, on the basis of the identification of the touch input corresponding to the designated gesture, to a second brightness that differs from the first brightness, the brightness of a first part on which at least one first visual object having a designated type is displayed from among a plurality of visual objects included in the screen.
G06F 3/04883 - Techniques d’interaction fondées sur les interfaces utilisateur graphiques [GUI] utilisant des caractéristiques spécifiques fournies par le périphérique d’entrée, p.ex. des fonctions commandées par la rotation d’une souris à deux capteurs, ou par la nature du périphérique d’entrée, p.ex. des gestes en fonction de la pression exer utilisant un écran tactile ou une tablette numérique, p.ex. entrée de commandes par des tracés gestuels pour l’entrée de données par calligraphie, p.ex. sous forme de gestes ou de texte
G06F 3/041 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction
H04M 1/72448 - Interfaces utilisateur spécialement adaptées aux téléphones sans fil ou mobiles avec des moyens permettant d’adapter la fonctionnalité du dispositif dans des circonstances spécifiques
95.
ELECTRONIC DEVICE AND METHOD FOR REDUCING POWER CONSUMPTION THEREOF
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Kim, Jonghwan
Abrégé
An electronic device is disclosed. The electronic device comprises: a display; a memory which stores image quality processing information according to a plurality of power consumption reduction levels; and at least one processor which is connected to the display and the memory and controls the electronic device, wherein the at least one processor: identifies a power consumption reduction amount corresponding to image quality processing information at a level selected from among the plurality of power consumption reduction levels, on the basis of the information stored in the memory; identifies a user reward on the basis of the identified power consumption reduction amount; and controls the display to display information on the identified user reward.
H04N 21/443 - Procédés de système d'exploitation, p.ex. démarrage d'un boîtier décodeur STB, implémentation d'une machine virtuelle Java dans un boîtier décodeur STB ou gestion d'énergie dans un boîtier décodeur STB
H04N 21/485 - Interface pour utilisateurs finaux pour la configuration du client
H04N 21/442 - Surveillance de procédés ou de ressources, p.ex. détection de la défaillance d'un dispositif d'enregistrement, surveillance de la bande passante sur la voie descendante, du nombre de visualisations d'un film, de l'espace de stockage disponible dans l
H04N 21/4784 - Services additionnels, p.ex. affichage de l'identification d'un appelant téléphonique ou application d'achat réception de récompenses
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Kang, Sangwoo
Lee, Kyunghwan
Abrégé
An electronic device according to various embodiments of the present disclosure may comprise: a first charging circuit connected between a first node and a second node; a second charging circuit connected between the first node and a third node; a switch connected between the second node and the third node; a battery connected to the second node; a system circuit connected to the third node; and a processor. Other various embodiments are possible.
H02J 7/00 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries
H02M 3/156 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation
G06F 1/30 - Moyens pour agir en cas de panne ou d'interruption d'alimentation
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Min, Hyunkee
Park, Wonbin
Yang, Changmok
Yun, Jusik
Choi, Seongsu
Choi, Junsu
Choi, Hyeonu
Abrégé
An operation method of electronic devices (101, 210), according to an embodiment, may comprise an operation of executing a first application using first communication (201) that does not support a multi-link operation (MLO) and a second application using second communication (203) that supports the MLO. The operation method may comprise an operation of transmitting, on the basis of information regarding a plurality of links associated with the second communication (203), data associated with the second application via one or more first links from among the plurality of links. The operation method may comprise an operation of controlling, from among the first links, a second link including a frequency band overlapping an operation channel of the first communication (201).
H04W 4/80 - Services utilisant la communication de courte portée, p.ex. la communication en champ proche, l'identification par radiofréquence ou la communication à faible consommation d’énergie
H04W 84/12 - Réseaux locaux sans fil [WLAN Wireless Local Area Network]
H04W 88/06 - Dispositifs terminaux adapté au fonctionnement dans des réseaux multiples, p.ex. terminaux multi-mode
98.
ELECTRONIC DEVICE AND METHOD FOR CONTROLLING RESOLUTION OF EACH OF PLURALITY OF AREAS INCLUDED IN IMAGE OBTAINED FROM CAMERA
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Lee, Boyoung
Kim, Sungoh
Yeom, Donghyun
Kim, Daehee
Kim, Suhyung
Kim, Jihyun
Lee, Sanghun
Cho, Yongil
Choi, Sungsoo
Abrégé
Provided is a processor of a wearable device. The operations carried out by the processor include: obtaining information on the position of the wearable device within the space in which the wearable device is present, on the basis of classification information for selecting one or more feature points among pixels, based on differences between the pixels included in first frames outputted from a first camera; identifying the resolution of each of a plurality of areas included in a FoV formed on the basis of a display, on the basis of the number of the feature points obtained for each of the plurality of areas on the basis of the classification information; and changing the resolution of a first area, among the plurality of areas, to a resolution greater than the resolution of a second area, among identified resolutions, on the basis of gaze information indicating the gaze of a user wearing the wearable device.
H04N 13/332 - Affichage pour le visionnement à l’aide de lunettes spéciales ou de visiocasques
H04N 13/383 - Suivi des spectateurs pour le suivi du regard, c. à d. avec détection de l’axe de vision des yeux du spectateur
H04N 13/239 - Générateurs de signaux d’images utilisant des caméras à images stéréoscopiques utilisant deux capteurs d’images 2D dont la position relative est égale ou en correspondance à l’intervalle oculaire
H04N 13/139 - Conversion du format, p.ex. du débit de trames ou de la taille
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Do, Minhong
Kim, Yongwoon
Park, Eunsoo
Bae, Jaebum
Cho, Yonglak
Abrégé
An electronic device according to an embodiment disclosed herein comprises: a housing that includes a first housing and a second housing configured to pivot relative to the first housing; and a hinge module that is accommodated in the housing and rotatably couples the first housing and the second housing. The hinge module may include: a hinge housing including an accommodation space; a plurality of springs arranged in the accommodation space of the hinge housing; a support member that is coupled to one end of the spring and includes an inclined portion corresponding to the one end of the spring; and a cam that is coupled to the other end of the spring and transmits force to the spring.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
Inventeur(s)
Kouris, Alexandros
Venieris, Stylianos
Laskaridis, Stefanos
Abrégé
An embodiment of the disclosure provides a method for optimising usage of a processing unit that is used to execute machine learning, ML, models. In particular, the present disclosure provides an apparatus and method for processing data using a multi-exit ML model in a way that optimises the usage of a processing unit used to execute the model.
G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques