A vacuum processing apparatus of this invention having a stage on which is disposed the to-be-processed substrate further has a lifting/rotation mechanism capable of lifting the to-be-processed substrate lying on the stage off from an upper surface of the stage to a predetermined height position so that, at this lifted position, the to-be-processed substrate is capable of rotation about a substrate center by a predetermined rotational angle. The lifting/rotation mechanism has: a driving rod built into the stage so as to be moveable up and down and also be rotatable; and a substrate supporting body having a base end plate part capable of contacting a central region, including the substrate center, of the to-be-processed substrate. The substrate supporting body further has at least two arm plate parts elongated from the base end plate part outward thereof.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p.ex. mandrins, pièces de serrage, pinces
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
2.
VACUUM TREATMENT APPARATUS AND VACUUM TREATMENT METHOD
In a present vacuum treatment apparatus, a controller controls an auxiliary roller, a thermometer, a power source, and a temperature control mechanism, in which the controller detects a temperature of a base material wound and conveyed by a main roller, starts film deposition to form a film deposition material on the base material when the temperature of the base material is in a film deposition temperature range, adjusts, when the temperature of the base material is out of a threshold range after starting film deposition on the base material, the temperature of the main roller so that the temperature of the base material falls within the threshold range and adjusts an adhesion force between the main roller and the base material, and continues the film deposition of the film deposition material on the base material with the temperature of the base material in the film deposition temperature range.
B65H 18/20 - Mécanismes d'enroulage des bandes dans lesquels l'énergie est appliquée à la bobine, p.ex. pour faire avancer la bande d'un mouvement continu la bobine étant portée sur deux rouleaux parallèles dont l'un au moins est entraîné
B65H 23/038 - Commande du positionnement transversal de la bande par des rouleaux
3.
SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING SYSTEM, AND METHOD FOR PROCESSING SUBSTRATE
A substrate processing device reduces a surface of a substrate. The surface includes a metal layer. The substrate processing device includes a chamber body, a hot plate, a plasma supply unit, and a controller. The hot plate is accommodated in the chamber body and configured to set the substrate. The plasma supply unit is configured to supply plasma of a hydrogen gas to the chamber body. The controller is configured to execute a degassing process and a reducing process. In the degassing process, the controller drives the hot plate to remove an adsorbate from the surface before driving the plasma supply unit. In the reducing process, the controller drives the plasma supply unit after driving the hot plate to supply the plasma to the surface that has undergone the degassing process.
An information processing device of the present invention includes a first acquisition unit, a second acquisition unit, and a machine learning processing unit. The first acquisition unit acquires total event status information. The second acquisition unit acquires time-series detection result information. The machine learning processing unit performs one or both of learning processing and determination processing. In the learning processing, a learning model is generated by performing machine learning with the time-series detection result information acquired by the second acquisition unit as an input for each piece of the total event status information acquired by the first acquisition unit. In the determination processing, a determination is performed on the generated learning model by inputting the time-series detection result information acquired by the second acquisition unit for each piece of the total event status information acquired by the first acquisition unit.
A vacuum treatment apparatus including: a first wind-off roller paying out a first base material; a first wind roller winding the first base material; a main roller having an outer circumferential surface in contact with a non-film deposition surface, and winding and conveying the first base material, at least a part of the outer circumferential surface, which is uncovered with the first base material, being coated with an insulating material; a deposition source facing the outer circumferential surface of the main roller; a second wind-off roller paying out a second base material that is wound and conveyed by the main roller and covers a part of a film deposition surface of the first base material on the outer circumferential surface of the main roller; a second wind roller winding the second base material; and a power source applying a bias potential to the main roller.
B05D 1/28 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces par transfert de liquides ou d'autres matériaux fluides, à partir de la surface d'éléments porteurs, p.ex. de pinceaux, tampons, rouleaux
6.
METHOD OF DEPOSITING SILICON NITRIDE FILM, APPARATUS FOR DEPOSITING FILM, AND SILICON NITRIDE FILM
In a method in which inside a vacuum chamber, a silicon target and a to-be-deposited object are disposed in a positional relationship to face each other; a sputtering gas, containing therein nitrogen gas, is introduced into the vacuum chamber which is in a vacuum atmosphere; a negative potential is applied to the silicon target such that a silicon nitride film having a tensile stress is deposited in a reactive sputtering on a surface of the to-be-deposited object that is placed in an electrically floated state. The method includes steps: in which the to-be-deposited object is made to a state in which a bias potential is free from being applied thereto; and at least one of a flow ratio of the nitrogen gas to the sputtering gas, and the potential to be applied to the silicon target is controlled such that the surface of the silicon target can be maintained in a transition mode.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01J 37/34 - Tubes à décharge en atmosphère gazeuse fonctionnant par pulvérisation cathodique
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
C23C 14/54 - Commande ou régulation du processus de revêtement
[Object] To improve step coverage of a coating film
[Object] To improve step coverage of a coating film
[Solving Means] A deposition apparatus that includes a first electrode, a second electrode, a first power supply source, a second power supply source, and a phase adjuster is used. The first power supply source includes a first high-frequency power source and a first matching circuit, the first high-frequency power source outputting first high-frequency power, the first matching circuit being connected between the first high-frequency power source and the first electrode. The second power supply source includes a second matching circuit that outputs second high-frequency power, the second high-frequency power having the same period as the first high-frequency power and being lower than the first high-frequency power. A second high-frequency power source is caused to output the second high-frequency power and the phase adjuster is caused to operate to provide a phase difference θ between a phase of the first high-frequency power and a phase of the second high-frequency power. A voltage value Vpp of the second high-frequency power and a capacitance value C1 of a first variable capacitor that correspond to the phase difference θ in a state where output impedance of the second high-frequency power source and load-side impedance connected to the second high-frequency power source match are detected. The voltage value Vpp and the capacitance value C1 are selected in combination in a predetermined range of the phase difference θ.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
ULVAC, INC. (Japon)
Inventeur(s)
Miyata, Noriyuki
Asanuma, Shutaro
Sumita, Kyoko
Miyaguchi, Yuusuke
Saito, Kazuya
Jinbo, Takehito
Horita, Kazumasa
Masuda, Takeshi
Abrégé
[PROBLEM] An object of the present invention is to provide a nonvolatile memory device having an excellent information retention characteristic, exhibiting high performance, and achieving practical mass-production, and a manufacturing method therefor.
[PROBLEM] An object of the present invention is to provide a nonvolatile memory device having an excellent information retention characteristic, exhibiting high performance, and achieving practical mass-production, and a manufacturing method therefor.
[SOLUTION] A nonvolatile memory device 1 has a laminated structure part including a plurality of Al2O3 layers 4 and a plurality of SiO2 layers 6 formed as two types of insulating layers formed with different compositions and disposed alternately, and an O-M1-O layer 5 of a 0.5 molecular layer to a 2.0 molecular layer, formed by a chemical bond between a metal element M1 and oxygen, and disposed on each joining interface between the insulating layers, the metal element M1 being an element other than elements constituting the insulating layers, and the nonvolatile memory device stores information by modulating an interface dipole induced in the vicinity of the O-M1-O layer 5 by external electrical stimulation.
H10B 43/35 - Dispositifs EEPROM avec des isolants de grille à piégeage de charge caractérisés par la région noyau de mémoire avec transistors de sélection de cellules, p.ex. NON-ET
H10B 43/23 - Dispositifs EEPROM avec des isolants de grille à piégeage de charge caractérisés par les agencements tridimensionnels, p ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p.ex. avec des canaux inclinés
H10B 41/23 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par les agencements tridimensionnels, p ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p.ex. avec des canaux inclinés
H10B 41/35 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la région noyau de mémoire avec un transistor de sélection de cellules, p.ex. NON-ET
9.
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
A plasma processing apparatus according to the invention includes a chamber, an inner electrode, an outer electrode, a plasma generating power source, and a gas introduction part. The plasma generating power source applies alternating-current power to the outer electrode. The outer electrode includes a first electrode, a second electrode, and a third electrode. The plasma generating power source includes a first high-frequency power source, a second high-frequency power source, and a power splitter. The first high-frequency power source applies alternating-current power having a first frequency λ1 to the first electrode and the second electrode. The second high-frequency power source applies alternating-current power having a second frequency λ2 to the third electrode. A relationship of λ1>λ2 is satisfied. The power splitter is configured to split the alternating-current power into the first electrode and the second electrode with a predetermined split ratio.
There is provided an evaporation source adapted for use in a vapor deposition apparatus in which by heating, in an induction heating method, a crucible filled with a vapor deposition material, the entire crucible including a cap body attains a top-heat state. An evaporation source is provided with: a crucible filled with the vapor deposition material; a cap body to close an upper surface opening of the crucible; and an induction heating coil disposed around the crucible and the cap body. Further, the cap body is provided with a discharge part which allows the passage of the vapor deposition material evaporated or sublimated by heating. The cap body is provided on an external surface thereof with projections each having a corner part.
A method for processing a subject with plasma includes repeatedly outputting first pulses from a pulse generator to a first high-frequency power supply, intermittently outputting first high-frequency power from the first high-frequency power supply to a first electrode based on the first pulses to generate the plasma, detecting start of plasma generation caused by a present first pulse with a detector, calculating a delay period, being from rise of the present first pulse until the detector detects start of plasma generation, repeatedly outputting second pulses from the pulse generator to a second high-frequency power supply based on time at which the delay period has elapsed from rise of a first pulse output after the delay period is calculated, and outputting second high-frequency power from the second high-frequency power supply to a second electrode based on the second pulses to draw ions from the plasma to the subject.
A vapor deposition source for a vacuum vapor deposition apparatus according to the present invention disposed in a vacuum chamber to evaporate a solid vapor deposition material to be vapor-deposited on an object to be subjected to vapor deposition includes: a crucible configured to accommodate the vapor deposition material therein and having a discharge port through which the evaporated vapor deposition material is discharged toward the object to be subjected to vapor deposition; and a heating means configured to heat the vapor deposition material in the crucible. In the crucible, an evaporation facilitator is provided, a partial portion of the evaporation facilitator being immersed in the vapor deposition material liquefied by heating, with a gap between the remaining portion of the evaporation facilitator and an inner surface of the crucible.
A cathode unit includes first and second magnet units that are driven to rotate around an axis on a side opposed to a sputtering surface of a target. The first magnet unit is configured to cause a first leakage magnetic field to act on a space in front of the sputtering surface including a target center inward. The second magnet unit is configured to cause a second leakage magnetic field to act locally in the space in front of the sputtered surface located between the target center and the outer edge of the target and to enable self-holding discharge under low pressure of plasma confined by the second leakage magnetic field.
[Object] To freeze droplets of a raw material liquid in a shorter drop distance while maintaining a cooling velocity, which is a super high speed, without deteriorating a solute or dispersoid.
[Object] To freeze droplets of a raw material liquid in a shorter drop distance while maintaining a cooling velocity, which is a super high speed, without deteriorating a solute or dispersoid.
[Solving Means] A vacuum freeze-drying method according to an embodiment of the present invention is a vacuum freeze-drying method that includes steps of injecting a raw material liquid from an injection nozzle inside a vacuum chamber, generating frozen particles by self-freezing of the raw material liquid, and drying the generated frozen particles to thereby produce a dry powder, including: injecting the raw material liquid from the injection nozzle in a state in which the vacuum chamber is maintained at water vapor partial pressure corresponding to a self-freezing temperature of the raw material liquid, such that an injection initial velocity of the raw material liquid from the injection nozzle is 6 m/s or more and 33 m/s or less; and adjusting, when the maximum diameter of the generated frozen particle exceeds a predetermined value or droplets of the raw material liquid are unfrozen, an injection flow rate of the raw material liquid from the injection nozzle or properties of the injection nozzle such that frozen particles having a maximum diameter equal to or smaller than the predetermined value are generated.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
15.
CATHODE UNIT FOR MAGNETRON SPUTTERING APPARATUS AND MAGNETRON SPUTTERING APPARATUS
A cathode unit for a magnetron sputtering apparatus includes a backing plate joined to an upper side opposed to a sputtering surface of a target set in a posture facing an inside of a vacuum chamber and a magnet unit disposed above the backing plate at an interval, a refrigerant passage through which a refrigerant can flow being formed in the backing plate, in which a surface pressure applying unit is provided, the surface pressure applying unit applying, toward an upper outer surface of the backing plate from above the backing plate, a surface pressure equivalent to pressure applied to an upper inner surface of the backing plate when the refrigerant is circulated.
A freeze-drying device includes a controller configured to control depressurization of containers filled with a liquid including a raw material and a medium to freeze the liquid from a liquid surface. The freeze-drying device also includes a gas capture pump configured to exhaust a freeze-drying chamber accommodating the containers, and a positive-displacement pump configured to discharge gas from a space accommodating the gas capture pump. The controller executes an exhaust mitigation process that performs the depressurization at an exhaust capability that is less than a rated exhaust capability of the freeze-drying device. The controller uses a partial pressure value of the medium to determine when the exhaust mitigation process ends. The controller maintains an exhaust speed of the gas capture pump and decreases an exhaust speed of the positive-displacement pump in the exhaust mitigation process.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
A plasma processing device includes an inductively coupled plasma antenna including an input end and an output end, a series circuit including an additional inductor and a variable capacitor connected in series, and a controller that varies a capacitance of the variable capacitor. The input terminal is connected via an antenna matching device to an antenna power supply. The output terminal is connected to the additional inductor. The additional inductor is connected via the variable capacitor to ground.
A high-frequency power circuit includes a first antenna circuit and a second antenna circuit that are connected in parallel to a matching box connected to a high-frequency power supply. The first antenna circuit include a first antenna, a first distribution capacitor, and a first variable capacitor. The second antenna circuit includes a second antenna, a second distribution capacitor, and a second variable capacitor. A controller sets a capacitance of the first variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the first antenna and the first variable capacitor during plasma production to reduce this phase difference and sets a capacitance of the second variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the second antenna and the second variable capacitor during plasma production to reduce this phase difference.
An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.
Embodiments of the present invention are directed to forming a ternary compound using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor includes a first metal and a first ligand. The second precursor includes a second metal and a second ligand. The second ligand is selected based on the first ligand to target a second metal uptake. A substrate is exposed to the first precursor during a first pulse of an ALD cycle and the substrate is exposed to the second precursor during a second pulse of the ALD cycle, the second pulse occurring after the first pulse. The substrate is exposed to a third precursor (e.g., an oxidant) during a third pulse of the ALD cycle. The ternary compound can include a ternary oxide film.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
21.
EVAPORATION SOURCE FOR VACUUM EVAPORATION APPARATUS
The evaporation source for use in the vacuum evaporation apparatus in vacuum evaporation of a film formation object inside a vacuum chamber has: a main cylindrical body having a crucible part to be filled with an evaporation material Em; a secondary cylindrical body protruded from such a portion of the main cylindrical body as is positioned above the evaporation material; and a heater capable of heating the evaporation material that is filled in the crucible part. The secondary cylindrical body is detachably mountable on the main cylindrical body while shifting a phase of the discharge opening. A lid body is disposed in a manner to open or close an upper-surface opening of the crucible part. In a state in which the upper-surface opening of the crucible part is blocked by the lid body in a vacuum atmosphere, the evaporation material in the crucible part is heated by the heater.
[Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same.
[Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same.
[Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention includes: an oxide sintered body including indium, tin, and germanium, in which an atom ratio of germanium with respect to a total of indium, tin, and germanium is 0.07 or more and 0.40 or less, and an atom ratio of tin with respect to the total of indium, tin, and germanium is 0.04 or more and 0.60 or less. As a result, it is possible to achieve transistor characteristics of having mobility of 10 cm2/Vs or more.
C04B 35/457 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de zinc, d'étain ou de bismuth ou de leurs solutions solides avec d'autres oxydes, p.ex. zincates, stannates ou bismuthates à base d'oxydes d'étain ou de stannates
An ion gun of the invention includes: an anode; a magnetic pole that has an inner surface facing the anode, a slit provided at a position corresponding to the anode, and an inner inclined surface that extends from an end of the inner surface to the slit and that forms a part of the slit; and a cover that covers at least the inner surface and the inner inclined surface, is formed of an electroconductive and non-magnetic material, and is detachable from the magnetic pole.
A vacuum processing apparatus including: a plurality of transport chambers arranged in order along a first direction; a plurality of process chambers connected to the transport chambers along a second direction that is perpendicular to the first direction; and a position conversion chamber connected to a first transport chamber among the transport chambers. The transport chambers include a rotational movement stage that rotates about a rotation axis that is perpendicular to the first direction and the second direction, and moves along a plane formed by the first direction and the second direction.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A freeze-drying device includes a controller configured to control depressurization of containers filled with a liquid including a raw material and a medium to freeze the liquid from a liquid surface. The freeze-drying device also includes a gas capture pump configured to exhaust a freeze-drying chamber accommodating the containers, and a positive-displacement pump configured to discharge gas from a space accommodating the gas capture pump. The controller executes an exhaust mitigation process that performs the depressurization at an exhaust capability that is less than a rated exhaust capability of the freeze-drying device. The controller uses a partial pressure value of the medium to determine when the exhaust mitigation process ends. The controller maintains an exhaust speed of the gas capture pump and decreases an exhaust speed of the positive-displacement pump in the exhaust mitigation process.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
Provided is an etching apparatus for etching a silicon oxide film using a processing gas containing hydrogen fluoride and ammonia, including: a chamber; a gas supply unit; a water vapor supply unit; and a control unit. The chamber is configured such that a substrate having the silicon oxide film on a surface thereof can be disposed therein. The gas supply unit is configured to be capable of supplying one of the processing gas and a precursor gas of the processing gas to the chamber. The water vapor supply unit is capable of supplying water vapor to the chamber. The control unit controls the gas supply unit and the water vapor supply unit to supply the water vapor and one of the processing gas and the precursor gas to the chamber during etching processing.
The invention provides an apparatus that causes film formation particles to adhere to a surface of a substrate moving in a hermetically-sealable chamber and thereby forms a thin film thereon and includes: a plasma generator; a substrate transfer unit; a film-formation source supplier; and a film-formation region limiter. The plasma generator includes a magnet located at the other surface of the substrate and a gas supplier that supplies a film forming gas to near the surface of the substrate. The film-formation region limiter includes a shield that is located close to the surface of the substrate and has an opening. The ratio of a diameter of the opening of the shield to a diameter of the plasma generated by the plasma generator in a direction along the surface of the substrate is in a range of less than or equal to 110/100.
C23C 14/32 - Evaporation sous vide par évaporation suivie d'une ionisation des vapeurs
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
C23C 14/04 - Revêtement de parties déterminées de la surface, p.ex. au moyen de masques
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
The vacuum processing apparatus for performing predetermined vacuum processing on a processing surface of a to-be-processed substrate is made up of: a vacuum chamber having disposed therein a to-be-processed substrate and having formed, on an upper wall of the vacuum chamber, a mounting opening facing the processing surface where a direction in which the processing surface looks is defined as an upper side; a processing unit for performing therein vacuum processing; and a communication pipe having a predetermined length and being interposed between the vacuum chamber and the processing unit such that predetermined processing is performed, through the communication pipe, on the to-be-processed substrate inside the vacuum chamber. The processing unit has an engaging means to which is coupled a swing arm for swinging about a rotary shaft extending perpendicularly to a vertical direction for selectively engaging the vacuum chamber and the communication pipe or the processing unit and the communication pipe.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
Provided is a sputtering apparatus which is capable of suppressing a local temperature rise at an outer peripheral part of a to-be-processed substrate. The sputtering apparatus SM has: a vacuum chamber in which a target and the to-be-processed substrate Sw are disposed face-to-face with each other; a shield plate for enclosing a film forming space between the target and the to-be-processed substrate; and a cooling unit for cooling the shield plate. The shield plate has a first shield plate part which is disposed around the to-be-processed substrate and which has a first opening equivalent in contour to the to-be-processed substrate. The cooling unit includes a first coolant passage which is disposed in the first shield plate part and which has a passage portion extending all the way to the first shield plate part positioned around the first opening.
The invention provides a film formation apparatus that includes: a transfer unit that transfers a substrate; a film formation unit that forms an electrolyte film on a film formation region of the substrate transferred by the transfer unit; and an extraneous-material removal unit that comes into contact with the electrolyte film of the substrate transferred by the transfer unit after film formation of the film formation unit and thereby removes extraneous materials contained in the film formation region.
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
C23C 14/56 - Appareillage spécialement adapté au revêtement en continu; Dispositifs pour maintenir le vide, p.ex. fermeture étanche
In a vacuum processing apparatus for performing a predetermined vacuum processing on a surface of a sheet-like base material while keeping the base material to travel inside the vacuum chamber, the can-roller of this invention disposed to lie opposite to a vacuum processing unit has an axial body; an inner cylindrical body to be inserted onto an outside of the axial body; an outer cylindrical body enclosing an outer cylindrical surface of the inner cylindrical body with a gap therebetween, and cover bodies for respectively closing axial both ends of the inner cylindrical body. Each of the cover bodies has a plurality of flow passages. A cross-section of each of the fluid passages overlaps a cross-section of the cover body. A cross-sectional area of the gap between the inner cylindrical body and the outer cylindrical body is set to a size that can obtain a predetermined flow velocity.
A freeze-drying method includes depressurizing containers filled with a liquid including a raw material and a medium with a freeze-drying device to freeze the liquid from a liquid surface. The depressurizing includes executing an exhaust mitigation process that performs the depressurizing at an exhaust capability that is less than a rated exhaust capability of the freeze-drying device, and using a partial pressure value of the medium to determine when the exhaust mitigation process ends. The executing an exhaust mitigation process includes maintaining an exhaust speed of a gas capture pump configured to discharge gas from a freeze-drying chamber accommodating the containers, and decreasing an exhaust speed of a positive-displacement pump configured to discharge gas from a space accommodating the gas capture pump.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
33.
Vacuum processing apparatus and method of cleaning vacuum processing apparatus
A vacuum processing apparatus of the present invention is a vacuum processing apparatus which performs plasma processing. The vacuum processing apparatus includes an electrode flange, a shower plate, an insulating shield, a processing chamber in which a processing-target substrate is to be disposed, an electrode frame, and a slide plate. The electrode frame and the slide plate are slidable in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered. The shower plate is supported by the electrode frame using a support member penetrating through an elongated hole. The elongated hole is formed so that the support member is relatively movable in the elongated hole in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/505 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence
A silicon dry etching method of the invention, includes: preparing a silicon substrate; forming a mask pattern having an opening on the silicon substrate; forming a deposition layer on the silicon substrate in accordance with the mask pattern while introducing a first gas; carrying out a dry etching process with respect to the silicon substrate in accordance with the mask pattern while introducing a second gas, and thereby forming a recess pattern on a surface of the silicon substrate; and carrying out an ashing process with respect to the silicon substrate while introducing a third gas.
The present invention provides a technology capable of inhibiting, in a vacuum processing apparatus that conveys a plurality of substrate holders along a conveying path formed to have a projected shape on a vertical surface, the projected shape being a continuous ring shape, dust from being generated during conveyance of a substrate holder. The present invention includes, in a vacuum chamber 2, an anti-sag member 35 assembled to a first drive unit 36 provided on an outer side with respect to a conveying direction of the conveying path, the vacuum chamber 2 including a conveying path formed to have a projected shape on the vertical surface, the projected shape being a continuous ring shape, a single vacuum atmosphere being formed in the vacuum chamber 2. A travel roller 54 of the anti-sag member 35 travels while being guided and supported by a guide unit 17 that is provided below a return-path-side conveying portion 33c positioned on a lower side of a substrate holder conveying mechanism 3 and extends in a second conveying direction P2, and the first drive part 36 is configured to come into contact with a first driven unit 12 of a substrate holder 11 and drive the substrate holder 11 along the conveying path in the second conveying direction P2.
C23C 14/56 - Appareillage spécialement adapté au revêtement en continu; Dispositifs pour maintenir le vide, p.ex. fermeture étanche
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p.ex. entre différents postes de travail
36.
Method of manufacturing OTS device, and OTS device
A method of manufacturing an OTS device of the invention is a method of manufacturing OTS device including a first conductor, an OTS portion made of chalcogenide, and a second conductor which are layered in order and disposed on an insulating substrate. The manufacturing method includes: a step D of forming a resist so as to coat part of an upper surface of the second conductor; a step E of dry etching a region which is not coated with the resist; and a step F of ashing the resist. In the step E, the second conductor, all of the OTS portion, and an upper portion of the first conductor are removed by an etching treatment once in a depth direction of the region.
H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
A vacuum processing apparatus SM of this invention has: a vacuum chamber which performs a predetermined processing on a to-be-processed substrate that is set in position in the vacuum chamber. Inside the vacuum chamber there is disposed a deposition preventive plate) which is made up of a fixed deposition preventive plate and a moveable deposition preventive plate which is moveable in one direction. Further provided are: a metal block body disposed in a vertical posture on an inner wall surface of the vacuum chamber; and a cooling means for cooling the block body. In a processing position in which a predetermined vacuum processing is performed on the to-be-processed substrate, a top surface of the block body is arranged to be in proximity to or in contact with the moveable deposition preventive plate.
To provide an electrostatic chuck that stably supports a substrate while suppressing a rapid increase in the volume of a gas, a vacuum processing apparatus, and a substrate processing method.
To provide an electrostatic chuck that stably supports a substrate while suppressing a rapid increase in the volume of a gas, a vacuum processing apparatus, and a substrate processing method.
An electrostatic chuck according to an embodiment of the present invention includes: a chuck plate that has a first surface supporting a substrate and a second surface opposite to the first surface. The chuck plate includes an exhaust passage that exhausts a gas from between the substrate and the first surface, the gas being emitted from the substrate between the substrate and the first surface when the substrate is supported by the first surface.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
A film formation apparatus of the present invention is a film formation apparatus which performs deposition on a substrate to be processed, and includes a supply device that is disposed in an evacuable vacuum chamber and supplies a deposition material, and a holding device that holds the substrate to be processed during deposition. The holding device includes a deposition preventing plate that covers a region to which the deposition material is adhered in the holding device, a holder that holds the substrate to be processed, and a position setter that sets a position of the substrate to be processed when the deposition preventing plate and the holder sandwich and hold the substrate to be processed. The position setter includes a roller that comes into contact with a peripheral edge end surface portion of the substrate to be processed.
A sputtering apparatus (SM) has a vacuum chamber in which is disposed a target. A plasma atmosphere is formed inside the vacuum chamber to thereby sputter the target. The sputtered particles splashed from the target are caused to get adhered to, and deposited on, a surface of a substrate disposed in the vacuum chamber, thereby forming a predetermined thin film thereon. At such a predetermined position inside the vacuum chamber as is subject to adhesion of the sputtered particles splashed from the target, there is disposed an adhesion body whose at least the surface of adhesion of the sputtered particles is made of a material equal in kind to that of the target. The adhesion body has connected thereto a bias power supply for applying a bias voltage having negative potential at the time of forming the plasma atmosphere.
A sputtering apparatus of the present invention is an apparatus performing deposition on a substrate to be processed using a sputtering method and includes a vacuum chamber, a target provided on a surface of a cathode provided in the vacuum chamber, a substrate holder provided in the vacuum chamber to face the target, and a swing unit that causes the substrate holder to be swingable with respect to the target. A swing region of the substrate to be processed in the substrate holder is set to be smaller than an erosion region of the target.
A substrate guide of the present invention is provided on a carrier frame of a carrier which holds a substrate substantially vertically so that a surface of the substrate is in a substantially vertical direction and supports the substrate by being in contact with at least a peripheral edge end surface portion of the substrate. The substrate guide includes a base attached to the carrier frame, a substrate support which comes into contact with the peripheral edge end surface portion of the substrate held by the carrier and is attached to the base to be movable in a normal direction of the peripheral edge end surface portion in a direction parallel to the surface of the substrate, and a force-applying member which applies a force to the substrate support toward the substrate with respect to the base.
B65G 49/06 - Systèmes transporteurs caractérisés par leur utilisation à des fins particulières, non prévus ailleurs pour des matériaux ou objets fragiles ou dommageables pour des feuilles fragiles, p.ex. en verre
Embodiments of the present invention are directed to forming a sub-stoichiometric metal-oxide film using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor can include a metal and a first ligand. The second precursor can include the same metal and a second ligand. A substrate can be exposed to the first precursor during a first pulse of an ALD cycle. The substrate can be exposed to the second precursor during a second pulse of the ALD cycle. The second pulse can occur directly after the first pulse without an intervening thermal oxidant. The substrate can be exposed to the thermal oxidant during a third pulse of the ALD cycle.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 29/51 - Matériaux isolants associés à ces électrodes
44.
Oxide semiconductor thin film, thin film transistor, method producing the same, and sputtering target
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
A housing case for a crystal oscillator monitors a film thickness of a thin film to be formed on a surface of the crystal oscillator, the monitoring being performed by measuring a resonance frequency during film formation in a vacuum atmosphere. The housing case has: a case main body having disposed on an upper surface thereof a plurality of first recessed parts each being capable of housing therein a crystal oscillator in a horizontal posture with a main surface thereof facing in an up-and-down direction; a first cap body detachably mounted on the case main body from an upper side thereof; and an engaging means for engaging the first cap body relative to the case main body. The engaging means is so constructed and arranged that, in a state in which the first cap body is engaged with the case main body, the crystal oscillators housed in the first recessed parts are restrained from jumping out of position.
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
A magnet unit for a magnetron sputtering apparatus is disposed above the target has: a yoke made of magnetic material and is disposed to lie opposite to the target; and plural pieces of magnets disposed on a lower surface of the yoke, wherein a leakage magnetic field in which a line passing through a position where the vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on such a lower space of the target as is positioned between the center of the target and a periphery thereof, the magnet unit being driven for rotation about the center of the target. In a predetermined position of the yoke there is formed a recessed groove in a circumferentially elongated manner along an imaginary circle with the center of the target serving as a center.
A magnet unit for a magnetron sputtering apparatus is disposed above the target has: a yoke made of magnetic material and is disposed to lie opposite to the target; and plural pieces of magnets disposed on a lower surface of the yoke, wherein a leakage magnetic field in which a line passing through a position where the vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on such a lower space of the target as is positioned between the center of the target and a periphery thereof, the magnet unit being driven for rotation about the center of the target. In a predetermined position of the yoke there is formed a recessed groove in a circumferentially elongated manner along an imaginary circle with the center of the target serving as a center.
A contact-type power supply apparatus includes: a first cylindrical body; a second cylindrical body configured to surround the first cylindrical body, be disposed concentrically to the first cylindrical body, and be rotatable around a central axis of the first cylindrical body; an annular body configured to surround the first cylindrical body, be disposed concentrically to the first cylindrical body, be in non-contact with the second cylindrical body, and have an end surface being an inclined surface having a tapered shape; and a contact body configured to face the annular body in an axial direction of the first cylindrical body, be electrically connected to the second cylindrical body, rotate around the central axis around the first cylindrical body together with the second cylindrical body, have a contact surface that is in contactable with the inclined surface, and receive an electric potential of the annular body by sliding with the annular body.
[Object] It is an object of the present invention to provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor including the aluminum alloy film.
[Solving Means] In order to achieve the above-mentioned object, an aluminum alloy film according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. Such an aluminum alloy film has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.
C22F 1/04 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid de l'aluminium ou de ses alliages
C23C 14/14 - Matériau métallique, bore ou silicium
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
A plasma CVD device (10) includes a vacuum container (21) including a space accommodating a film formation subject (S), a storage (30) storing hydrogen-free isocyanate silane and heating the isocyanate silane to generate an isocyanate silane gas supplied to the vacuum container (21), a pipe (11) connecting the storage (30) to the vacuum container (21) to supply the isocyanate silane gas generated by the storage (30) to the vacuum container (21), a temperature adjuster (12) adjusting a temperature of the pipe (11) to 83° C. or higher and 180° C. or lower, an electrode (22) disposed in the vacuum container (21), and a power supply (23) supplying high-frequency power to the electrode (22). When a silicon oxide film is formed on the film formation subject (S) in the vacuum container (21), pressure of the vacuum container (21) is greater than or equal to 50 Pa and less than 500 Pa.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/509 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes internes
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
A sputtering apparatus SM has: a vacuum chamber in which a substrate and a target are disposed to lie opposite to each other; a plasma generating means generating a plasma inside the vacuum chamber; and a magnet unit disposed above the target. The magnet unit has a plurality of magnets with different polarities on a substrate side. A leakage magnetic field in which a line passing through a position where a vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on such a space below the target as is positioned between the center of the target and a periphery thereof. The magnet unit is divided, on an imaginary line extending from the center of the target toward a periphery thereof, into a plurality of segments each having a plurality of magnets.
A laterally switching cell structure including a metal-insulator-metal stack includes an active metal oxide layer including one or more sub-stoichiometric regions. The metal oxide layer includes one or more metal-oxides deposited conformally using a mixed precursor atomic layer deposition process. A graded oxygen profile in the metal oxide layer(s) of the stack including a mirrored impurity density may be formed wherein the sub-stoichiometric region(s) include a relatively high density of impurities obtained as reaction by-products. Arrays of cell structures can be formed with no requirement for a thick active electrode, allowing for more space for a metal fill and optional selector, thereby reducing access resistance.
H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
Provided is a vacuum processing apparatus which is capable of performing baking processing of a deposition preventive plate without impairing the function of being capable of cooling the deposition preventive plate disposed inside a vacuum chamber. The vacuum processing apparatus has a vacuum chamber for performing a predetermined vacuum processing on a to-be-processed substrate that is set in position inside the vacuum chamber. A deposition preventive plate is disposed inside the vacuum chamber. Further disposed are: a metallic-made block body vertically disposed on an inner surface of the lower wall of the vacuum chamber so as to lie opposite to a part of the deposition preventive plate with a clearance thereto; a cooling means for cooling the block body; and a heating means disposed between the part of the deposition preventive plate and the block body to heat the deposition preventive plate by heat radiation.
[Object] To provide a sputtering target with further improved sputtering efficiency, and a method of producing the sputtering target.
(004)) of X-ray diffraction peaks corresponding to a (100) plane, a (002) plane, a (101) plane, a (102) plane, a (110) plane, a (103) plane, a (112) plane, and a (004) plane of a hexagonal close-packed lattice structure along the sputtering surface is 0.85 or more.
C22C 19/07 - Alliages à base de nickel ou de cobalt, seuls ou ensemble à base de cobalt
C22F 1/10 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du nickel ou du cobalt ou de leurs alliages
H01F 41/18 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateurs; Appareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour appliquer des pellicules magnétiques sur des substrats par pulvérisation cathodique
The sputtering apparatus has a vacuum chamber in which is disposed a target. While rotating a circular substrate at a predetermined rotational speed with a center of the substrate, the target is sputtered to form the thin film on the surface. The sputtering apparatus has: a stage for rotatably holding the substrate in a state in which the center of the substrate is offset by a predetermined distance to radially one side from the center of the target; and a shielding plate disposed between the target and the substrate on the stage. The shielding plate has an opening part allowing to pass sputtered particles scattered out of the target as a result of sputtering the target. The opening part has a contour in which, with a central region of the substrate serving as an origin, the area of the opening part gradually increases from the origin toward radially outward.
Inside a main chamber there are provided: first partition walls partitioning a deposition chamber having a deposition unit; and second partition walls disposed in continuation to the first partition walls so as to cover outer cylinder parts of a can-roller while leaving a first gap that curves at a curvature coinciding with an outer peripheral surface of the can-roller. The deposition chamber and an adjacent chamber are in communication with each other with the first gap such that a conductance between the deposition chamber and the adjacent chamber is determined by the second partition walls. At least one of the second partition walls is arranged to be rotatable, with a rotary shaft of the can-roller, between a shielding position which shields such a part of the can-roller as is lying opposite to the deposition unit, and a withdrawn position which is circumferentially away from the deposition unit.
[Object] It is an object of the present invention to provide an aluminum alloy target capable of forming an aluminum alloy film having excellent bending resistance and heat resistance, and a method of producing the aluminum alloy target.
[Object] It is an object of the present invention to provide an aluminum alloy target capable of forming an aluminum alloy film having excellent bending resistance and heat resistance, and a method of producing the aluminum alloy target.
[Solving Means] In order to achieve the above-mentioned object, an aluminum alloy target according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. The aluminum alloy film formed using such an aluminum alloy target has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.
A substrate transport device includes an arm, an end effector coupled to the arm, a driver configured to lift the arm so that the end effector receives a substrate, and a controller configured to control an output of the driver to set a lifting speed of the arm. A difference in height between the end effector and the arm is a position difference. A period from when the end effector contacts the substrate until the end effector completes reception of the substrate is a transition period. The controller sets an upper limit value of the lifting speed that decreases an amplitude of one of acceleration or jerk of the position difference in the transition period as compared to before the transition period to an upper limit value of the lifting speed for the transition period.
A substrate transport device includes an arm, an end effector coupled to the arm, a driver configured to lift the arm so that the end effector receives a substrate, and a controller configured to control an output of the driver to change a lifting speed of the arm. While lifting the arm at a first speed to lift the end effector toward the substrate, the controller changes the lifting speed to a second speed that is lower than the first speed when the end effector starts to raise a height position of the substrate.
A sputtering target according to an embodiment of the present invention includes: a plate-shaped target body formed of a metal material. The target body includes a target portion and a base portion. The target portion has a sputtering surface. The base portion has a cooling surface and includes a gradient strength layer, the cooling surface being positioned on a side opposite to the sputtering surface and having hardness higher than that of the sputtering surface, the gradient strength layer having tensile strength that gradually decreases from the cooling surface toward the target portion.
A freeze vacuum drying apparatus includes: a spraying unit; a pipe unit; a heating unit; and a collection unit. The spraying unit sprays a raw material liquid into a vacuum chamber. The pipe unit has a non-linear shape, includes a first opening end and a second opening end, and traps frozen particles via the first opening end, the frozen particles being formed by self-freezing of liquid droplets formed by spraying the raw material liquid into the vacuum chamber. The heating unit heats the frozen particles in the pipe unit for sublimation drying, the frozen particles moving in the pipe unit from the first opening end toward the second opening end by kinetic energy produced during spraying. The collection unit collects dried particles that are formed by sublimation drying of the frozen particles in the pipe unit and released from the second opening end of the pipe unit.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
A23L 3/00 - Conservation des aliments ou produits alimentaires, en général, p.ex. pasteurisation ou stérilisation, spécialement adaptée aux aliments ou produits alimentaires
A gate valve has a communication block with a communication passage and a valve unit having a valve plate movable between a partitioning position and an open position. A lower end part of the valve plate comes into pressurized contact with a surface of a band-shaped base material transferred through the communication passage between a first chamber and a second chamber. Due to a force of this pressurized contact, a back surface of the base material is seated on a seating surface provided in the communication passage. A groove is formed in the lower end of the valve plate, and a roller-shaped sealing member with a central shaft is inserted into the groove. Opening parts are formed in both axial side-wall surfaces of the groove such that the end parts of the central shaft of the sealing member are inserted into the opening parts and pivotally supported with a clearance.
F16K 3/24 - Robinets-vannes ou tiroirs, c. à d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation en forme de surfaces de solides de révolution avec corps de tiroir cylindrique
F16K 3/02 - Robinets-vannes ou tiroirs, c. à d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planes; Garnitures d'étanchéité à cet effet
F16K 39/04 - Dispositifs pour relâcher la pression sur les faces d'un joint d'étanchéité dans le cas de tiroirs
F16K 51/02 - Autres détails non particuliers aux types de soupapes ou clapets ou autres appareils d'obturation spécialement conçus pour les installations de vide poussé
F16K 31/122 - Moyens de fonctionnement; Dispositifs de retour à la position de repos actionnés par un fluide le fluide agissant sur un piston
A gate valve comprising a plurality of first force-applying units built in a valve box; a second force-applying unit disposed between a first movable valve and a second movable valve; and a third force-applying unit. The first force-applying units are driven by incompressible fluid and have a function of applying a force to the first movable valve to be directed to the first opening portion in the flow passage direction and thereby causing the seal portion to be in close contact with a valve box inner surface located at the periphery of the first opening portion. The gate valve includes an incompressible-fluid driver that drives, the first force-applying units by incompressible fluid.
F16K 3/10 - Robinets-vannes ou tiroirs, c. à d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planes; Garnitures d'étanchéité à cet effet avec éléments de fermeture articulés à pivot et dispositions particulières pour tenir écartées les faces d'obturation ou pour les presser l'une contre l'autre
F16K 3/18 - Robinets-vannes ou tiroirs, c. à d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planes; Garnitures d'étanchéité à cet effet avec dispositions particulières pour tenir écartées les faces d'obturation ou pour les presser l'une contre l'autre du fait du mouvement des éléments de fermeture
F16K 51/02 - Autres détails non particuliers aux types de soupapes ou clapets ou autres appareils d'obturation spécialement conçus pour les installations de vide poussé
F16K 3/06 - Robinets-vannes ou tiroirs, c. à d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planes; Garnitures d'étanchéité à cet effet avec éléments de fermeture articulés à pivot en forme de plaques disposées entre l'alimentation et l'évacuation
64.
Deep ultraviolet LED and method for producing the same
2Deff is the effective refractive index of two-dimensional photonic crystals, and a is the period of the two-dimensional photonic crystals) satisfies 2≤m≤4, and the radius of each void is R, R/a satisfies 0.30≤R/a≤0.40.
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
Embodiments of the present invention are directed to forming a ternary compound using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor includes a first metal and a first ligand. The second precursor includes a second metal and a second ligand. The second ligand is selected based on the first ligand to target a second metal uptake. A substrate is exposed to the first precursor during a first pulse of an ALD cycle and the substrate is exposed to the second precursor during a second pulse of the ALD cycle, the second pulse occurring after the first pulse. The substrate is exposed to a third precursor (e.g., an oxidant) during a third pulse of the ALD cycle. The ternary compound can include a ternary oxide film.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
66.
Ion source, ion implantation apparatus, and ion source operating method
d) of the vacuum chamber. The main body of the shielding member has a plurality of protruding support portions that is in contact with the inner wall of the vacuum chamber for supporting the main body in a manner such that the main body is fitted at a distance from the inner wall of the vacuum chamber.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p.ex. implantation d'ions
A cathode device includes a rotation plate to which a magnetic circuit is fixed, a rotation mechanism including a rotation shaft that rotates the rotation plate when receiving power from a motor, and a linear motion parallel link mechanism. The parallel link mechanism includes an end effector, six links each having a distal end and a proximal end, and three linear motion mechanisms. The end effector rotationally supports the rotation shaft, the distal ends of the links are connected to the end effector, the links radially extend from the end effector, and the linear motion mechanisms move the proximal ends of adjacent two of the links in one direction when receiving power from respective linear actuators. A controller controls a change in position of the rotation shaft performed by a cooperative operation of the linear actuators, and controls rotation of the rotation shaft operated by the motor.
x)Ge as a main component and crystalizing the amorphous magnetic film by heating the amorphous magnetic film. The crystalizing includes heating the amorphous magnetic film to a temperature that is greater than or equal to 225° C. and less than or equal to 400° C.
A method of the invention is a method of processing a wiring substrate that includes a configuration in which conductors locally disposed on a substrate are coated with resin having inorganic members that form a filler and are dispersed in an organic member, the method including: removing the organic member from a surface layer side of the resin by use of an ashing method; and removing, by use of a wet cleaning method, the inorganic members remaining the surface layer side of the resin from which the organic member is removed.
Provided is a deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength λ. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
H01L 33/14 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure contrôlant le transport des charges, p.ex. couche semi-conductrice fortement dopée ou structure bloquant le courant
H01L 33/20 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
[Object] To efficiently supply lubricant oil to a bearing member with a simple mechanism.
[Solving Means] A vacuum pump includes a first housing, a second housing, a rotor shaft, a lubricant oil-stirring plate, and a bearing member. The second housing is attached to the first housing and forms a space that stores lubricant oil together with the first housing. The rotor shaft passes through the first housing. The lubricant oil-stirring plate is housed in the space and is attached to the rotor shaft. The bearing member is fixed to the first housing and rotatably supports the rotor shaft. The first housing includes a supply port that enables lubricant oil to be supplied to the bearing member. The second housing includes an inner-wall upper portion which the lubricant oil stirred by the lubricant oil-stirring plate hits against. The inner-wall upper portion of the second housing includes a recess portion that enables the lubricant oil to move above the supply port.
The reactive ion etching apparatus of this invention has a stage provided with an electrostatic chuck having a pair of electrodes. At the time of etching a to-be-processed substrate, by applying DC voltage to the pair of electrodes, the to-be-processed substrate is electrostatically absorbed to the electrostatic chuck. In this reactive ion etching apparatus, a radio-frequency power source connected to the stage, through a first output line, applies bias potential to the to-be-processed substrate. The radio-frequency power source is also arranged to be connected through a second output line to the pair of electrodes so as to apply radio-frequency potential in a manner to be superposed on the DC voltage. The first capacitor and the second capacitor are respectively interposed in the first output line and the second output line. A capacitance ratio of the first capacitor to the second capacitor is set to a range of 2.5 to 25.
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p.ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
A vacuum pump according to an embodiment of the present invention includes a pump housing and a cooling pipe. The pump housing is constituted by cast iron. The cooling pipe includes an outer circumferential surface and an inner circumferential surface and is constituted by stainless steel. The cooling pipe passes through the pump housing and the outer circumferential surface which is in close contact with the pump housing, is constituted by a sensitized layer. This vacuum pump is formed such that the pump housing constituted by cast iron is casted around the cooling pipe constituted by stainless steel. The sensitized layer is provided on the outer circumferential surface of the cooling pipe, the sensitized layer is in contact with the pump housing, and the pump housing is efficiently cooled.
F04C 2/18 - Machines ou pompes à piston rotatif du type à engrènement extérieur, c. à d. avec un engagement des organes coopérants semblable à celui d'engrenages dentés d'un autre type qu'à axe interne avec des pistons rotatifs dentés à formes de dents semblables
F04C 25/02 - Adaptations de pompes pour utilisation spéciale pour les fluides compressibles pour produire un vide élevé
F04C 15/00 - "MACHINES" À LIQUIDES À DÉPLACEMENT POSITIF, À PISTON ROTATIF OU OSCILLANT; POMPES À DÉPLACEMENT POSITIF, À PISTON ROTATIF OU OSCILLANT - Parties constitutives, détails ou accessoires des "machines", des pompes ou installations de pompage non couverts par les groupes
74.
Pressure measurement system for judging power supply from terminal device to control section
Pressure measurement system has inside a main body to be mounted on an object to be measured: a sensor section; a control section processing an input from the sensor section and outputting a predetermined signal; a vacuum gauge provided with power supply circuit sections for providing the control section and the sensor section with power; and a terminal device being connectable to the control section, through a communication line, in a manner to be freely communicated with each other and being capable of supplying the power circuit section with power. The vacuum gauge is arranged to be able to judge the power supply from the terminal device to the control section. When power is supplied from the terminal device to the control section, the control section and the terminal device are connected together through the communication line so as to be freely communicated with each other.
G01L 21/12 - Mesure des modifications de la résistance électrique des organes de mesure, p.ex. des filaments; Indicateurs de vide du type Pirani
75.
Method of manufacturing substrate with a transparent conductive film, manufacturing apparatus of substrate with transparent conductive film, substrate with transparent conductive film, and solar cell
A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01J 37/34 - Tubes à décharge en atmosphère gazeuse fonctionnant par pulvérisation cathodique
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p.ex. entre différents postes de travail
H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
H01L 31/0376 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur structure cristalline ou par l'orientation particulière des plans cristallins comprenant des semi-conducteurs amorphes
H01L 31/075 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type PIN, p.ex. cellules solaires PIN en silicium amorphe
H01L 31/20 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - les dispositifs ou leurs parties constitutives comprenant un matériau semi-conducteur amorphe
76.
Method for manufacturing semiconductor device using plasma CVD process
A vacuum pump includes a pump main body and a sound muffling device. The pump main body includes a housing including an intake port and an exhaust port, and a rotor that is rotatably arranged inside the housing and transports gas from the intake port to the exhaust port. The sound muffling device includes a casing, a first passage portion, and a second passage portion. The casing includes an opening end portion that is airtightly connected to an outer wall surface of the housing, a bottom wall portion that faces the opening end portion, and a peripheral wall portion, the casing defining an expansion chamber by the outer wall surface of the housing and respective inner wall surfaces of the bottom wall portion and the peripheral wall portion.
F04B 39/00 - "MACHINES" À LIQUIDES À DÉPLACEMENT POSITIF; POMPES - Parties constitutives, détails ou accessoires de pompes ou de systèmes de pompage spécialement adaptés aux fluides compressibles, non prévus dans les groupes ou présentant un intérêt autre que celui visé par ces groupes
F04B 37/14 - Pompes spécialement adaptées aux fluides compressibles et ayant des caractéristiques pertinentes non prévues dans les groupes ou présentant un intérêt autre que celui visé par ces groupes pour utilisation particulière pour obtenir un vide élevé
A sensor head has: a sensor head main body which has disposed therein the stepping motor; a holder which has disposed on an upper surface thereof a plurality of crystal oscillators and which is driven for rotation by the stepping motor; and a mask body which is mounted on the sensor head main body so as to cover an upper surface of the holder and which has opened therein a film-forming window faced by one of the crystal oscillators. The sensor head also has: a first electrode fixed to that portion of the sensor head main body which is located right under the film-forming window; and second electrodes which are in electrical conduction with each of the crystal oscillators and which are disposed to protrude under a lower surface of the holder.
A sputtering apparatus is provided with: a vacuum chamber having a target manufactured by sintering raw material powder; a magnet unit having a plurality of magnets disposed on the same surface above the target which is mounted on the vacuum chamber in a non-rotatable manner, in order to cause leakage magnetic field penetrating the target to function in uneven distribution on the sputtering surface; a rotary shaft which is disposed on the center line passing through the center of the target and is coupled to the magnet unit; and a drive motor for driving the rotary shaft to rotate, thereby rotating the magnet unit such that a function region of the leakage magnetic field on the sputtering surface revolves about an imaginary circle with the center of the target serving as the center.
3, yielding an aluminum (Al) content up to 57 atomic % (at. %) and work function setting from 3.9 eV to 5.0 eV at thicknesses below 25 Å. Such structures can present metal gate length scaling and resistance benefit below 25 nm compared to state of the art work function electrodes.
H01L 29/49 - Electrodes du type métal-isolant-semi-conducteur
H01L 29/43 - Electrodes caractérisées par les matériaux dont elles sont constituées
H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/8238 - Transistors à effet de champ complémentaires, p.ex. CMOS
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
B82Y 10/00 - Nanotechnologie pour le traitement, le stockage ou la transmission d’informations, p.ex. calcul quantique ou logique à un électron
NATIONAL UNIVERSITY CORPORATION, IWATE UNIVERSITY (Japon)
Inventeur(s)
Miura, Makoto
Morikawa, Takuya
Takada, Norihisa
Yoshimoto, Tsuyoshi
Hanamoto, Takashi
Ohinata, Yoichi
Abrégé
A vacuum drying apparatus includes a chamber, a steam supply line, an evacuation line, a circulation line, and a pressurizing and heating unit. The chamber includes an inlet, an outlet, and a treatment space capable of accommodating food. The steam supply line is connected to the inlet and is configured to be capable of supplying steam into the treatment space. The evacuation line is connected to the outlet and is configured to be capable of evacuating the treatment space. The circulation line is provided outside the chamber and causes steam to circulate from the outlet to the inlet. The pressurizing and heating unit is provided in the circulation line. The pressurizing and heating unit includes a pressurizer which includes a first pump and a flow channel diameter restrictor and pressurizes the steam, a heater which is provided between the first pump and the flow channel diameter restrictor and heats steam pressurized by the pressurizer, and a controller that controls at least one of the first pump or the flow channel diameter restrictor in accordance with a pressure of the heater.
F26B 5/04 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide
F26B 3/06 - Procédés de séchage d'un matériau solide ou d'objets impliquant l'utilisation de chaleur par convection, c. à d. la chaleur étant transférée d'une source de chaleur au matériau ou aux objets à sécher par un gaz ou par une vapeur, p.ex. l'air le gaz ou la vapeur s'écoulant à travers le matériau ou les objets à sécher
F26B 21/10 - Commande, p.ex. régulation des paramètres de l'alimentation en gaz de la pression
2Cl. The first step and the second step are alternately repeated to form an aluminum carbide film on the film formation subject such that a content rate of aluminum atoms is 20 atomic percent or greater.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
83.
Composition control of chemical vapor deposition nitrogen doped germanium antimony tellurium
3/Ar. The method may include providing a flow modulated chemical vapor deposition apparatus. The method may further include flowing gas precursors into the flow modulated chemical vapor deposition apparatus to provide the base material components of the phase change material. The method further includes flowing a co-reactant precursor and an inert gas into the flow modulated chemical vapor deposition, wherein adjusting ratio of the co-reactant precursor to the inert gas adjusts the crystalline state resistance of the phase change material.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/30 - Dépôt de composés, de mélanges ou de solutions solides, p.ex. borures, carbures, nitrures
H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou
84.
Device, method of manufacturing the device, and method of manufacturing array type of ultrasound probe
A ultrasound probe according to this invention is provided with: a first dry film resist having a plurality of first apertures formed in an array shape, and respectively supporting the piezoelectric elements in close contact with a rim part of each of the first apertures in a state of partly exposing the function elements; a second dry film resist laminated on the first dry film resist, and also having second apertures respectively enclosing each of the function elements, the second dry film resist being of a thickness equivalent to that of each of the function elements; and a third dry film resist laminated on the second dry film resist, and also having third apertures, and respectively sandwiching each of the piezoelectric elements with the first dry film resist in a state of partly exposing the piezoelectric elements in close contact with a rim part of each of the third apertures.
[Object] To make it difficult for components other than films to be contained in a lamination interface.
[Solving Means] In a deposition apparatus, a vacuum chamber includes a partition wall which defines a plasma formation space and includes quartz. An deposition preventive plate is provided between at least a part of the partition wall and the plasma formation space and includes at least one of yttria, silicon nitride, or silicon carbide. On a support stage, a substrate including a trench or hole including a bottom portion and a side wall is capable of being disposed. A plasma generation source generates first plasma of deposition gas including silicon introduced into the plasma formation space to thereby form a semiconductor film including silicon on the bottom portion and the side wall. The plasma generation source generates second plasma of etching gas including halogen introduced into the plasma formation space to thereby selectively remove the semiconductor film formed on the side wall. A controller is capable of switching between generation of the first plasma and generation of the second plasma.
C23C 16/505 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence
C23C 16/04 - Revêtement de parties déterminées de la surface, p.ex. au moyen de masques
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques
An ion source having an ion generation container configured to generate ions by reacting ionized gas introduced into the container via a tubular gas introduction pipe with an ion source material emitted in the container. The gas introduction pipe is configured to introduce the ionized gas into an inner space of the gas introduction pipe via a gas supply pipe. In the inner space of the gas introduction pipe, a detachable cooling trap member is disposed and includes a cooling trap portion configured to cool and trap a byproduct produced in the ion generation container. The cooling trap portion is disposed near a supply-side leading end of the gas supply pipe in the inner space of the gas introduction pipe and is not contact with an interior wall face of the gas introduction pipe.
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p.ex. implantation d'ions
A vacuum processing apparatus having a small installation area is provided. A lifting plate is arranges inside a vacuum chamber, and a substrate holding device is arranged on the lifting plate to be able to be lifted up and down. An upper side processing device and a lower side processing device are provided in a processing region located beside a lifting region where the lifting plate moves up and down. An upper side moving device and a lower side moving device make the substrate holding device pass through the processing region, and a transfer device transfers the substrate holding device between the upper side moving device or the lower side moving device and the lifting plate. Because vacuum processing can be performed on the upper side and the lower side, the installation area of the vacuum processing apparatus is small.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p.ex. entre différents postes de travail
A gate valve of the invention includes a valve box, a neutral valve body, and a rotation shaft. The neutral valve body includes a neutral valve and a movable valve. The movable valve includes a first movable valve and a second movable valve. The gate valve includes a plurality of first force-applying units, a second force-applying unit, and a third force-applying unit. The third force-applying unit applies a force to the first movable valve. The first force-applying units apply a force to the first movable valve and thereby causing the seal portion to be in close contact with a valve box inner surface located at a periphery of the first opening portion. The second force-applying unit drives the first movable valve and the second movable valve so that thicknesses thereof in the flow passage direction are adjustable.
F16K 3/10 - Robinets-vannes ou tiroirs, c. à d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planes; Garnitures d'étanchéité à cet effet avec éléments de fermeture articulés à pivot et dispositions particulières pour tenir écartées les faces d'obturation ou pour les presser l'une contre l'autre
F16K 3/18 - Robinets-vannes ou tiroirs, c. à d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planes; Garnitures d'étanchéité à cet effet avec dispositions particulières pour tenir écartées les faces d'obturation ou pour les presser l'une contre l'autre du fait du mouvement des éléments de fermeture
F16K 51/02 - Autres détails non particuliers aux types de soupapes ou clapets ou autres appareils d'obturation spécialement conçus pour les installations de vide poussé
F16K 3/06 - Robinets-vannes ou tiroirs, c. à d. dispositifs obturateurs dont l'élément de fermeture glisse le long d'un siège pour l'ouverture ou la fermeture à faces d'obturation planes; Garnitures d'étanchéité à cet effet avec éléments de fermeture articulés à pivot en forme de plaques disposées entre l'alimentation et l'évacuation
In a film forming unit (FU) for a sputtering apparatus according to this invention, a supporting plate is provided with: a target having bonded thereto a backing plate; a magnet unit; and driving device for reciprocating the target along the supporting plate relative to the magnet unit. The backing plate is provided, in a protruded manner, with a supply pipe and a discharge pipe in communication with a coolant passage for the backing plate. A slit hole, which is elongated in the reciprocating direction of the target and through which the supply pipe and the discharge pipe penetrate, is formed in the supporting plate. The supporting plate has on its lower surface a cap body which hermetically encloses those portions of the supply pipe and the discharge pipe, inclusive of the slit hole, which are protruded downward from the slit hole.
There is provided a cathode unit for a sputtering apparatus, having a construction in which a target can be replaced without opening a vacuum chamber to the atmosphere. The cathode unit having targets and being adapted to be mounted on a vacuum chamber has: a supporting frame mounted on an external wall of the vacuum chamber; an annular moveable base supported by the supporting frame in a manner to be movable toward or away from the vacuum chamber; a rotary shaft body rotatably supported by the movable base in a manner to be elongated through an inner space of the movable base in parallel with a sputtering surface of the target; provided an axial direction of the rotary shaft body is defined to be an X-axis direction, and a forward or backward direction orthogonal to the X-axis direction of the movable base is defined to be a Z-axis direction.
A manufacturing method for an electronic component according to an aspect of the present invention includes: forming a first metal layer on a substrate; forming a second metal layer on the first metal layer; forming a mask made of an organic resin layer on the second metal layer; performing plasma etching on the second metal layer by using a reactant gas including fluorine via the mask to thereby form a recess portion in a layered film of the organic resin layer and the second metal layer; performing oxygen ashing treatment on an inner surface of the recess portion; and forming a third metal layer in the recess portion by electroplating treatment after the oxygen ashing treatment.
C25D 5/34 - Prétraitement des surfaces métalliques à revêtir de métaux par voie électrolytique
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 21/3205 - Dépôt de couches non isolantes, p.ex. conductrices ou résistives, sur des couches isolantes; Post-traitement de ces couches
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
C23F 4/00 - Procédés pour enlever des matériaux métalliques des surfaces, non couverts par le groupe ou
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
A current fluctuating due to a load fluctuation is limited to protect a semiconductor switch. A protection circuit includes a switch circuit that turns on when a predetermined conduction voltage is applied thereto, and a sub-reactance circuit having a predetermined reactance value is connected in parallel to a main reactance circuit through which a high frequency current generated by a semiconductor switch flows. When the switch circuit is turned on, the main reactance circuit and the sub-reactance circuit are connected in parallel, and a high frequency current flows through this parallel connection circuit. The impedance value of the parallel connection circuit is set to be larger than the impedance value of the main reactance circuit so that the current is limited due to the turning on of the switch circuit, and thus, the semiconductor switch is protected.
H03K 17/0812 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande
H02H 9/02 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de courant
H02J 7/00 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries
H03F 1/52 - Circuits pour la protection de ces amplificateurs
H03F 3/193 - Amplificateurs à haute fréquence, p.ex. amplificateurs radiofréquence comportant uniquement des dispositifs à semi-conducteurs comportant des dispositifs à effet de champ
H02J 7/34 - Fonctionnement en parallèle, dans des réseaux, de batteries avec d'autres sources à courant continu, p.ex. batterie tampon
There is provided a holding apparatus which is capable of rotatably holding, while cooling to a cryogenic temperature, a to-be-processed object in a vacuum chamber. A holding apparatus for rotatably holding, while cooling, a to-be-processed object in a vacuum chamber Vc, has a stage on which the to-be-processed object is placed, a rotary drive device for rotatably supporting the stage, and a cooling device for cooling the stage. Provided that a stage surface side on which the to-be-processed object is placed is defined as an upside, the rotary drive device has: a tubular rotary shaft body which is mounted on a wall surface of the vacuum chamber, in a penetrating manner, through a first vacuum seal; a connection member for connecting an upper end part of the rotary shaft body and a lower surface of the stage in a manner to define a space below the stage; and a driving motor for driving to rotate the rotary shaft body.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p.ex. mandrins, pièces de serrage, pinces
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01J 37/34 - Tubes à décharge en atmosphère gazeuse fonctionnant par pulvérisation cathodique
A method of forming an internal stress control film on one surface of an object to be processed by a sputtering method, includes selecting a pressure of a process gas at the time of forming the internal stress control film from a pressure region higher than a threshold value of 5 (Pa) so that stress of the object to be processed when a bias is applied to the object to be processed becomes larger stress on a tensile side and the internal stress control film has higher density, as compared with stress in a case in which a bias is not applied thereto.
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
C23C 14/00 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
C23C 14/35 - Pulvérisation cathodique par application d'un champ magnétique, p.ex. pulvérisation au moyen d'un magnétron
H01L 21/3205 - Dépôt de couches non isolantes, p.ex. conductrices ou résistives, sur des couches isolantes; Post-traitement de ces couches
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01L 21/033 - Fabrication de masques sur des corps semi-conducteurs pour traitement photolithographique ultérieur, non prévue dans le groupe ou comportant des couches inorganiques
The present invention provides a technique to enable sufficient space saving in a transit-type vacuum processing device. The vacuum processing device 1 of the present invention has: a vacuum chamber 2 where a single vacuum ambience is formed; first and second processing regions 4 and 5 that are provided in the vacuum chamber 2 and have a processing source that performs processing on a planar process surface of a substrate 10; and a conveyance drive member 33 that forms a conveyance path for conveying the substrate 10 so as to pass through the first and second processing regions 4 and 5. The conveyance path is formed as a single annular path when the conveyance path is projected onto a plane (vertical plane) containing: a normal line of an arbitrary point on a process surface of the substrate 10 conveyed through the conveyance path, and a trajectory line drawn by the arbitrary point on the process surface of the substrate 10 when the substrate 10 passes straight through the first and second processing regions 4 and 5.
B65G 17/12 - Transporteurs comportant un élément de traction sans fin, p.ex. une chaîne transmettant le mouvement à une surface porteuse de charges continue ou sensiblement continue, ou à une série de porte-charges individuels; Transporteurs à chaîne sans fin dans lesquels des chaînes constituent la surface portant la charge comprenant une série de porte-charges individuels fixés ou normalement fixés à l'élément de traction
C23C 14/56 - Appareillage spécialement adapté au revêtement en continu; Dispositifs pour maintenir le vide, p.ex. fermeture étanche
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p.ex. entre différents postes de travail
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
B65G 49/06 - Systèmes transporteurs caractérisés par leur utilisation à des fins particulières, non prévus ailleurs pour des matériaux ou objets fragiles ou dommageables pour des feuilles fragiles, p.ex. en verre
A film formation apparatus includes a target containing a magnetic material, a support that supports a substrate and locates the substrate in an arrangement region opposing the target, and a magnetic field formation unit located at a side of the arrangement region opposite to the target. The magnetic field formation unit forms a horizontal magnetic field parallel to an oscillation direction, which is one direction extending along the substrate, at a side of the arrangement region where the target is located. The magnetic field formation unit oscillates the horizontal magnetic field in the oscillation direction at least between one end of the arrangement region and another end of the arrangement region in the oscillation direction.
C23C 14/35 - Pulvérisation cathodique par application d'un champ magnétique, p.ex. pulvérisation au moyen d'un magnétron
H01F 41/18 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateurs; Appareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour appliquer des pellicules magnétiques sur des substrats par pulvérisation cathodique
H01J 37/34 - Tubes à décharge en atmosphère gazeuse fonctionnant par pulvérisation cathodique
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
97.
Film formation apparatus, film formation method, and manufacturing method of solar battery
The present invention provides a technique for performing film formation at low cost without causing a short-circuit between sputtered films formed on opposite surfaces of a film-formation target substrate. According to the present invention, in a substrate-holder conveyance mechanism 3, a substrate holder 11 is conveyed by a first conveyance portion so that the substrate holder 11 passes through a first film formation region; film formation is performed by sputtering on a first surface of a film-formation target substrate 50 held by the substrate holder 11; the substrate holder 11 is conveyed from the first conveyance portion to a second conveyance portion in such a manner as to make a turn with the up/down orientation of the substrate holder 11 maintained; the substrate holder 11 is conveyed by the second conveyance portion in a direction opposite to the direction of conveyance by the first conveyance portion so that the substrate holder 11 passes through a second film formation region; and film formation is performed by sputtering on a second surface of the film-formation target substrate 50. The substrate holder 11 has openings 14 and 15 through which first and second surfaces of the film-formation target substrate 50 are exposed, and includes a shield portion 16 for shielding an edge portion of the film-formation target substrate 50 from a film formation material supplied from a second sputtering source.
C23C 14/56 - Appareillage spécialement adapté au revêtement en continu; Dispositifs pour maintenir le vide, p.ex. fermeture étanche
H01L 31/0747 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type PN à hétérojonction comprenant uniquement une hétérojonction AIVBIV, p.ex. cellules solaires Si/Ge, SiGe/Si ou Si/SiC comprenant une hétérojonction avec des matériaux cristallins et amorphes, p.ex. cellules solaires avec une couche mince intrinsèque ou HIT®
C23C 14/54 - Commande ou régulation du processus de revêtement
H01L 31/20 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - les dispositifs ou leurs parties constitutives comprenant un matériau semi-conducteur amorphe
C23C 14/04 - Revêtement de parties déterminées de la surface, p.ex. au moyen de masques
98.
Thin-film transistor, oxide semiconductor film, and sputtering target
A thin-film transistor according to an embodiment of the present invention includes: a gate electrode; an active layer formed of an oxide containing indium, zinc, and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and a drain electrode that are electrically connected to the active layer. Atomic proportions of elements relative to the total quantity of indium, zinc, and titanium that constitute the oxide may be not less than 24 at. % and not more than 80 at. % for indium, not less than 16 at. % and not more than 70 at. % for zinc, and not less than 0.1 at. % and not more than 20 at. % for titanium.
According to a mode of the present invention, a method of manufacturing an electronic component includes: preparing a component main-body 110 including a first surface having an electrode-formed region having a plurality of bump electrodes 103, a second surface opposite to the first surface, and side peripheral surfaces connecting the first surface and the second surface; forming a mask section M1 on at least a peripheral portion of the first surface, the mask section surrounding the electrode-formed region, a height of the mask section being equal to or more than a height of the plurality of bump electrodes; bonding the mask section of the first surface to an adhesive layer 30 on a holder for holding a component; forming a protective film 105 on the component main-body, the protective film covering the second surface and the side peripheral surfaces; and removing the mask section M1 from the first surface.
H01L 21/32 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches en utilisant des masques
H01L 23/29 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par le matériau
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
100.
Deep ultraviolet LED and method for manufacturing the same
Provided is a deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength λ. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01L 33/06 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure à effet quantique ou un superréseau, p.ex. jonction tunnel au sein de la région électroluminescente, p.ex. structure de confinement quantique ou barrière tunnel
H01L 33/14 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure contrôlant le transport des charges, p.ex. couche semi-conductrice fortement dopée ou structure bloquant le courant
H01L 33/20 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une forme particulière, p.ex. substrat incurvé ou tronqué
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
brevets
