SPUTTERING TARGET FOR OXIDE SEMICONDUCTOR THIN FILM FORMATION, METHOD FOR PRODUCING SPUTTERING TARGET FOR OXIDE SEMICONDUCTOR THIN FILM FORMATION, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
C04B 35/01 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes
C04B 35/453 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de zinc, d'étain ou de bismuth ou de leurs solutions solides avec d'autres oxydes, p.ex. zincates, stannates ou bismuthates
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
SPUTTERING TARGET FOR FORMATION OF OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING SPUTTERING TARGET FOR FORMATION OF OXIDE SEMICONDUCTOR THIN FILM, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
XYVwZZ, X is within the range of 0.4 to 0.8, Y is within the range of 0 to 0.1 and Z is within the range of 0.2 to 0.6, while satisfying X + Y + Z = 1, V/(V + W + X + Y + Z) is 0.01 to 0.22 and W/(V + W + X + Y + Z) is 0.01 to 0.06.
C04B 35/01 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes
C04B 35/453 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de zinc, d'étain ou de bismuth ou de leurs solutions solides avec d'autres oxydes, p.ex. zincates, stannates ou bismuthates
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
The specific embodiments of the present invention provide: dried plasma that is characterized by having excellent particle uniformity, retaining the activity of the various blood clotting factors, and having a D50 of 200–400 μm on a volume-based particle size distribution obtained by laser diffraction/scattering particle size distribution measurement; and a production method, etc. for the dried plasma.
B01J 2/04 - Procédés ou dispositifs pour la granulation de substances, en général; Traitement de matériaux particulaires leur permettant de s'écouler librement, en général, p.ex. en les rendant hydrophobes par division du produit liquide en gouttelettes, p.ex. par pulvérisation, et solidification des gouttelettes en milieu gazeux
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
F26B 17/10 - Machines ou appareils à mouvement progressif pour le séchage d'un matériau en vrac, à l'état plastique ou sous forme fluidisée, p.ex. granulés, fibres brutes le mouvement étant réalisé par des courants de fluides, p.ex. provenant d'une tuyère
The present invention provides a tungsten target and a method for manufacturing the same that suppresses the occurrence of particle-causing pores, controlling the size and distribution thereof to high precision. The tungsten target is formed from sintered tungsten powders, wherein, in a 0.15 mm2observation area having a relative density of 99% or more, there are no more than 20 pores that are 0.01 μm2or more and less than 0.2 μm2in size, no more than five pores that are 0.2 μm2or more and less than 1.8 μm2in size, and no more than one pore that is 1.8 μm2 or more in size.
The present invention relates to a method for forming a tungsten (W) film in a semiconductor device, by using a physical vapor deposition (PVD) sputtering method on a semiconductor substrate, the tungsten film forming method comprising: a) a first deposition step of depositing a tungsten film on the semiconductor substrate by using magnetron sputtering with a power density of less than 0.5 W/㎠ ; b) a step of modifying the surface of the deposited tungsten by performing RF bias processing under an inert gas atmosphere; and c) a second deposition step of additionally depositing a tungsten film on the deposited tungsten film by using magnetron sputtering of a power density of 0.5 W/㎠ or more.
According to the present invention, particles are inhibited from infiltrating a vacuum processing device. To achieve the abovementioned purpose, a vacuum processing device according to one mode of the present invention comprises a vacuum vessel, a charged particle generation source, an exhaust mechanism, and a particle removal mechanism. Charged particles are generated inside the charged particle generation source. The exhaust mechanism exhausts gas that is inside the vacuum vessel. The particle removal mechanism includes an intermediate tank that is disposed between the vacuum vessel and the charged particle generation source and that connects the vacuum vessel and the charged particle generation source, and the particles generated by the charged particle generation source are discharged using a gas stream to outside the intermediate tank in front of the vacuum vessel.
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériau; Moyens de réglage de diaphragmes ou de lentilles associées au support
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p.ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
C23C 14/00 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
7.
SPUTTERING TARGET, METHOD FOR PRODUCING SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
C04B 35/01 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
A display device of the present invention is provided with a display control unit which executes a display control process for controlling the operation of a prescribed display destination and for displaying multiple N-dimensional graphs on the display destination. In the N-dimensional graphs, predetermined multiple types of explanatory variables are each defined as a display candidate explanatory variable, and predetermined multiple types of objective variables are each defined as a display candidate objective variable, and each of the graphs shows a relationship between a Q-1 type (Q is an integer of 2 or more) explanatory variable among the display candidate explanatory variables and one type objective variable among the display candidate objective variables. The multiple N-dimensional graphs include a first graph and a second graph that have a common explanatory variable and different objective variables. The display control process includes a process which involves, when a prescribed condition is satisfied regarding acquisition of fixed-value change information including auxiliary explanatory variable information for designating one or more of auxiliary explanatory variables as values to be changed and information indicating current variable values, updating the first graph and the second graph to be displayed on the display destination to changed graphs in which the values of the auxiliary explanatory variables indicated by the auxiliary explanatory variable information have been changed to the current variable values indicated by the fixed-value change information.
Provided is a silicon nitride film forming method with which a silicon nitride film having a relatively strong tensile stress can be formed by reactive sputtering. In this silicone nitride film forming method, a silicon target 3 and a film-forming object Sw are disposed opposing each other within a vacuum chamber 1, a sputtering gas containing a nitrogen gas is introduced into the vacuum chamber under a vacuum atmosphere, and a negative potential is applied to the silicon target to form a silicon nitride film having a tensile stress by reactive sputtering on the surface of the film-forming object which is disposed in an electrically floating state, wherein the method includes a step in which the film-forming object is placed in a state in which a bias potential is not being applied, and β-type silicon nitride is deposited on the surface of the film-forming object by controlling the flow amount ratio of the nitrogen gas relative to the sputtering gas and/or the potential to be applied to the silicon target so that the surface of the silicon target is maintained in a transition mode between a metal mode and a compound mode.
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
H01L 21/318 - Couches inorganiques composées de nitrures
Provided is a vacuum processing device that holds a stage configured so as to be able to offset the phase of a substrate to be treated without causing positional deviation of the substrate. A vacuum processing device SM, according to the present invention, which comprises a stage 4 on which a substrate Sw to be processed is installed, is characterized by further comprising a lifting/lowering rotation mechanism Rm that lifts the substrate to be processed on the stage to a prescribed height position from the stage top surface and can rotate the substrate to be processed at this lifted position every prescribed rotation angle about the substrate center, the lifting/lowering rotation mechanism including: a drive rod 5 that is incorporated into the stage and can freely move up/down and freely rotate; and a substrate support body 6 including a proximal end plate part 61 that can contact a center region of the substrate to be processed including the substrate center, and at least two arm plate parts 62 that extend outward from the proximal end plate part and can contact a portion of the substrate to be processed along the radial direction, the substrate support body normally being immersed within the stage, and the proximal end plate part and the arm plate parts being lifted up by upward movement of the drive rod to support the substrate to be processed.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
This sputtering device is provided with a cathode unit for emitting sputter particles toward a surface to be treated of a substrate on which a film is to be formed. The cathode unit has a target, a magnet unit, a magnet scanning unit, and an auxiliary magnet. The auxiliary magnet causes magnetic field lines formed by a magnet positioned at a first oscillation end to tilt toward a second oscillation end along the magnet positioned at the first oscillation end.
[Problem] To provide a vacuum pump and a control method therefor with which it is possible to improve vacuum evacuation performance while protecting a motor from overheating. [Solution] A vacuum pump according to one embodiment of the present invention comprises a positive-displacement pump body, a motor, and a control unit. The pump body has a pump rotor. The motor rotates the pump rotor. When a load torque is equal to or lower than a first predetermined torque, the control unit executes a first control mode in which the motor is driven at a predetermined rotation speed or lower. When the load torque exceeds the first predetermined torque, the control unit executes a second control mode in which the motor is driven at the predetermined rotation speed or lower using a second predetermined torque or lower, the second predetermined torque being higher than the first predetermined torque, with a first predetermined power set as the upper limit of motor output.
Provided is a film forming method by which a metal film having a high melting point can be formed in a state where a stress difference is as small as possible and which is suitable in the case of using a cylindrical target. A film forming method according to the present invention, which forms a metal film having a high melting point on an opposite surface to each target 5 of a substrate Sw disposed in a vacuum treatment room 1a, comprises: a first step for taking, as a first target group 50a, starting point targets 5a, 5b at which both outer edge parts of the substrate face each other and targets 5c, 5d that are positioned outward in a target aligned direction from the starting point targets, for taking, as a second target group 50b, targets 5e–5h that are positioned inward in the target aligned direction from the starting point targets, and for supplying power to each of the targets of the second target group by means of a sputter power supply 7 and forming a film when the metal film having a high melting point starts to be formed on the substrate; and a second step for supplying power to each of the targets of the first target group by means of the sputter power supply and forming a film simultaneously with or prior to the stopping of supplying power to each target of the second target group.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
H01L 21/365 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/15 - Structures avec une variation de potentiel périodique ou quasi périodique, p.ex. puits quantiques multiples, superréseaux
H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
Provided is a freeze-drying device that can evenly measure water quality flow rate serving as a management indicator for the drying state of an object to be dried. This freeze-drying device (FM) comprises: a freeze-drying chamber (1a) in which is disposed an object (Ds) to be dried having water as a solvent; and a collection chamber (2a) that communicates with the freeze-drying chamber and in which a cold trap (4) is provided for condensing and collecting water vapor generated from the object to be dried. The freeze-drying device further comprises a plurality of measurement means (Pg11 to Pg23) allowing measurement of state quantities of at least one among the object to be dried, the inside of the freeze-drying chamber, and the inside of the collection chamber, associated with sublimation of water from the object to be dried, and a measurement means (5) for measuring the water quality flow rate on the basis of the state quantities measured by the respective measurement means. The measurement means has a plurality of measurement models corresponding to the measurement of the water quality flow rate and, while the state quantities are being measured by the respective measurement means, the measurement model that is dominant at the time of measurement and with which it is possible to measure the water quality flow rate is selected from a set in which measurement values measured by the respective measurement means and the respective measurement models corresponding thereto are combined. The water quality flow rate is obtained from the selected measurement values and the measurement model corresponding thereto.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
[Problem] To improve step coverage of a coating film. [Solution] To use a film formation device equipped with a first electrode, a second electrode, a first power supply source, a second power supply source, and a phase adjuster. The first power supply source includes a first high-frequency power source that outputs first high-frequency power, and a first matching circuit that is connected between the first high-frequency power source and the first electrode. The second power supply source includes a second matching circuit that outputs a second high-frequency power lower than a first high-frequency power with the same period as the first high-frequency power. The second high-frequency power is caused to be output from the second high-frequency power source, and the phase adjuster is operated to provide a phase difference θ to a phase of the first high-frequency power and a phase of the second high-frequency power. A voltage value Vpp of the second high-frequency power and a capacitance value C1 of a first variable capacitor are detected that correspond to the phase difference θ in a state where the output impedance of the second high-frequency power source and the load-side impedance connected to the second high-frequency power source are matched to each other. The voltage value Vpp and the capacitance value C1 are selected in combination in a prescribed range of the phase difference θ.
Provided is a substrate holding device capable of smoothly discharging assist gas without deteriorating a function of improving sealing between an annular wall and a process-target substrate. This substrate holding device SH comprises: a susceptor 6 in which a first annular wall 61 in contact with the outer circumferential part of a process-target substrate Sw and a second annular wall 62 disposed inward of the first annular wall are protruded; a surface pressure applying means 51 for applying surface pressure, toward the first and second annular walls, to the process-target substrate in contact with the first and second annular walls; and gas introduction means 71, 72, 71a, 72a for introducing a predetermined gas to an outward space 63 that is in the susceptor and that is partitioned by the process-target substrate and the first and second annular walls, and to an inward space 64 that is in the susceptor and that is partitioned by the process-target substrate and the second annular wall, to cause the respective outward and inward spaces to be in a gas atmosphere. At the second annular wall, a connecting path 62a is formed so as to connect the outward space and the inward space with each other, and has a conductance value at which the gas atmosphere can be separated between the outward space and the inward space.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
Provided is a vacuum processing device capable of removing introduced particles to the greatest extent possible while maintaining a vacuum atmosphere. The device has a vacuum chamber 1, 2 in which a processing unit 4 is installed. A vacuum pump 15 is connected to the vacuum chamber, and a stage 3 is provided within the vacuum chamber. An oscillation means to oscillate the stage between a first orientation and a second orientation is provided, the first orientation being the orientation of the stage when a substrate Sw faces the processing unit and is processed, and the second orientation being the orientation of the stage other than during processing. A spraying means 5 for spraying an inert gas toward the stage is provided in the vacuum chamber. The spraying means is configured to allow the flow rate to be switched between a first flow rate that enables particles adhering to at least one of the stage and the substrate to be blown away while the interior of the vacuum chamber is a vacuum atmosphere of prescribed pressure and a second flow rate that enables particles diffused within the vacuum chamber by being blown away to be transferred to the vacuum pump.
C23C 14/00 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
19.
METHOD FOR CONTROLLING RESISTIVITY AND CRYSTALLINITY OF LOW-RESISTANCE MATERIAL THROUGH PVD
22 wafer by using low-temperature magnetron sputtering at a pressure of 1-40 Pa; b) modifying, after formation of the barrier layer, the surface of the barrier layer by applying RF bias in an Ar gas atmosphere without applying DC power; and c) layering a low-resistance material on the barrier layer by using magnetron sputtering, wherein the low-resistance material is at least one selected from the group consisting of tungsten (W), ruthenium (Ru), molybdenum (Mo), cobalt (Co) and rhodium (Rh).
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
C23C 14/16 - Matériau métallique, bore ou silicium sur des substrats métalliques, en bore ou en silicium
C23C 14/35 - Pulvérisation cathodique par application d'un champ magnétique, p.ex. pulvérisation au moyen d'un magnétron
20.
SPUTTERING DEVICE, CONTROL METHOD OF SPUTTERING DEVICE, AND CONTROL DEVICE FOR SPUTTERING DEVICE
A sputtering device according to an embodiment of the present invention is equipped with: one or more targets disposed to face a substrate and made from a film deposition material; one or more magnet units disposed on the rear side of the targets; a control device having an optimum solution calculation unit for calculating an optimum solution for a setting condition pertaining to at least one of the magnet units on the basis of input information which includes at least a setting condition, which includes at least one among the position of each magnet unit, a movement pattern of each magnet unit, and inflow currents to constituent electromagnets of each magnet unit or an inflow current fluctuation pattern, and a measurement value of the film quality of the film deposition material deposited on the substrate by the sputtering device; and an adjustment unit capable of individually adjusting the setting conditions of the magnet units on the basis of the optimum solution.
1122 that, on the side of a target 5 opposite to a sputtering surface 51, are respectively driven about an axis C1. The first magnet unit is configured such that a first stray magnetic field Mf1 is caused to act on a front space of the sputtering surface which includes a target center Tc therein. The second magnet unit causes a second stray magnetic field Mf2 to locally act on the front space of the sputtering surface located between the target center and an outer edge section of the target, and is configured so as to enable low-pressure self-maintained discharge of plasma contained in the second stray magnetic field.
11 comprises: a crucible 4 in which a vapor deposition material Vm is filled; a cap body 5 which blocks an upper surface opening 4a of the crucible; and an induction heating coil 6 which is disposed around the crucible and the cap body, wherein a discharge portion 51a that allows the passage of vapor deposition material which has been evaporated or sublimated by heating is provided to the cap body, and a ridge 52b that has corners is provided to an outer surface of the cap body.
A control unit (21) performs: a gas discharge mitigation treatment, in which a transient response state of a pressure is switched to a low-speed gas discharge treatment to discharge a gas dissolved in a liquid material (M) from the liquid material (M), and in which the temperature of a liquid surface in the liquid material (M) becomes the lowest; a gas discharge enhancement treatment, in which subsequently the low-speed gas discharge treatment is switched to a high-speed gas discharge treatment to adjust the pressure in a container (C) to a pressure of a gas-phase region in a medium and the liquid surface is further cooled to generate ice nuclei in the liquid surface; and a boiling inhibition treatment, in which subsequently the pressure in the container is adjusted to a triple point of the medium or higher to inhibit the generation and growth of bubble nuclei.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
24.
TEMPERATURE MEASUREMENT METHOD, TEMPERATURE MEASUREMENT DEVICE, AND THIN FILM FORMATION METHOD
In the temperature measurement method of this invention, a temperature measurement substrate, on which a phase-change film a physical quantity of which changes due to a change in the arrival temperature is laminated, is subjected to a heat treatment, after the temperature measurement substrate has been subjected to heat treatment, the physical quantity of the phase-change film is measured to obtain a measured physical quantity, and the temperature and temperature distribution of the temperature measurement substrate in the heat treatment of the temperature measurement substrate are obtained on the basis of the measured physical quantity and a predetermined relationship between the physical quantity and the temperature.
B21C 51/00 - Dispositifs de mesure, de calibrage, d'indication, de comptage ou de marquage, spécialement conçus pour être utilisés dans la production ou la manipulation des matériaux concernés par les sous-classes
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
G01K 7/16 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs
G01K 11/12 - Mesure de la température basée sur les variations physiques ou chimiques, n'entrant pas dans les groupes , , ou utilisant le changement de couleur, de translucidité ou de réflectance
25.
CATHODE UNIT FOR MAGNETRON SPUTTERING DEVICE, AND MAGNETRON SPUTTERING DEVICE
14144 disposed inside a vacuum chamber 1 are equipped with a linear center magnet 52 and a peripheral magnet 53 that surrounds the periphery of the center magnet and that has linear parts 53a, 53b and a bridging part 53c bridging between the two free ends of the two linear parts, in such a manner that the polarities on the target side are changed. There is generated a magnetic field Mf leaking from the sputtering surface so that a line passing through positions at which the vertical component of the magnetic field is zero extends in the longitudinal direction of the center magnet and closes in a racetrack shape. In a state in which the attitude of the peripheral magnet is maintained, the two end portions of the center magnet are respectively shifted to the sides of mutually different linear parts of the peripheral magnet in accordance with the target-side polarity of the center magnet.
Provided is an evaporation source for vacuum deposition devices which has a high deposition rate onto a deposition target and makes it possible to evaporate a large amount per unit of time when evaporating an evaporant and depositing the same onto the deposition target. This evaporation source DS for vacuum deposition devices Dm according to the present invention is positioned inside a vacuum chamber 1, and is used to evaporate a solid evaporant and deposit the same onto a deposition target, said evaporation source DS being equipped with: a crucible 4 which is capable of storing an evaporant Ms and has a discharge port 41 through which the evaporated evaporant is discharged toward the deposition target Sw; a heating means 6 capable of heating the evaporant in the crucible; and an evaporation promoter 5 provided inside the crucible in a manner such that one portion 5a thereof is immersed in the evaporant Ml, which has been melted by heating, while a gap D1 exists between the remaining portion 5b thereof and the inner surface 42 of the crucible.
H01L 51/50 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED)
H05B 33/10 - Appareils ou procédés spécialement adaptés à la fabrication des sources lumineuses électroluminescentes
27.
NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR
H01L 27/115 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs
H01L 27/11507 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs avec condensateurs ferro-électriques de mémoire caractérisées par la région noyau de mémoire
H01L 27/1159 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs les électrodes de grille comprenant une couche utilisée pour ses propriétés de mémoire ferro-électrique, p.ex. semi-conducteur métal-ferro-électrique [MFS] ou semi-conducteur d’isolation métal-ferro-électrique-métal [MFMIS] caractérisées par la région noyau de mémoire
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
H01L 29/792 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à isolant de grille à emmagasinage de charges, p.ex. transistor de mémoire MNOS
28.
HIGH-FREQUENCY POWER CIRCUIT, PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING METHOD
A high-frequency power circuit includes: a first antenna circuit (Lin, VCin1, VCin2); a second antenna circuit (Lo, VCo1, VCo2); and a controller (51). The first antenna circuit includes a first antenna (Lin) for plasma generation; a first distribution capacitor (VCin1); and a first variable capacitor (VCin2). The second antenna circuit includes a second antenna (Lo) for plasma generation; a second distribution capacitor (VCo1); and a second variable capacitor (VCo2). The controller sets the capacitance value of the first variable capacitor so that the phase difference between the current and the voltage of a serial section of the first antenna and the first variable capacitor during plasma generation becomes small, such setting performed on the basis of the result of detecting the phase difference. The controller also sets the capacitance value of the second variable capacitor so that the phase difference between the current and the voltage of a serial section of the second antenna and the second variable capacitor during plasma generation becomes small, such setting performed on the basis of the result of detecting the phase difference.
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p.ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
C23C 16/507 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes externes, p.ex. dans des réacteurs de type tunnel
111 connected to a power source circuit, which are mechanically separated. The power receiving unit and the power supply unit are disposed so as to face each other at the axial-direction front end of the inner cylinder and the axial-direction rear end of the straight section.
Provided are: a laminated structure having strong bending-resistance; and a method for manufacturing the laminated structure. A laminated structure LS according to the present invention has a first titanium layer L1, an aluminum layer L2, and a second titanium layer L3 which are sequentially laminated, wherein each of the first and second titanium layers has a crystal structure having diffraction peaks on a (002) plane and a (100) plane, in the Miller index as measured by the X-ray diffraction, the half-value width of the diffraction peak on the (002) plane is at most 1.0 deg, and the half-value width of the diffraction peak on the (100) plane is at most 0.6 deg.
C23C 14/14 - Matériau métallique, bore ou silicium
B32B 15/01 - Produits stratifiés composés essentiellement de métal toutes les couches étant composées exclusivement de métal
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
Provided is a drive block for a rotary cathode unit that is capable of supplying electric power to a component inside an inner cylinder without the need for waterproofing. A drive block DB for a rotary cathode unit Rc comprising a first drive means 92 for driving a target Tg to rotate about an axis is provided with: a hollow cylinder 4 having a straight section axially extending from an inner cylinder 3; a first inner cylinder body 5 inserted over the straight section of the hollow cylinder and defining a first path Fp3 communicating with a refrigerant circulation path Fp2 inside the inner cylinder; a second inner cylinder body 5 inserted over the first inner cylinder body and defining a second path Fp4 communicating with a refrigerant circulation path Fp1 between the target and the inner cylinder; and an outer cylinder body 7 fitted over the second inner cylinder body with a bearing Br2 therebetween, connected to one axial end of the target, and to which motive power from the drive means is transmitted. The drive block is further provided with isolation means Sv1 to Sv3 for isolating an internal space formed by the inner cylinder and the hollow cylinder, which communicate with each other in a state in which the hollow cylinder is connected to one end of the inner cylinder, from a vacuum atmosphere.
This sputtering device is provided with a vacuum chamber, a cathode, a target, a substrate holding unit, and an oscillation unit. The oscillation unit has an oscillation shaft extending in an oscillation direction, an oscillation drive part for causing the substrate holding unit to oscillate in an axial direction of the oscillation shaft, and a rotary drive part disposed on the oscillation shaft and causing the oscillation shaft to turn. The rotary drive part is capable of rotating the substrate holding unit between a horizontal mounting position where a substrate to be processed, which is positioned substantially horizontally, is mounted and dismounted and a vertical processing position where a surface to be processed of the substrate is erected along a substantially vertical direction. The oscillation unit is provided with a deposition-preventing plate arranged around the substrate and oscillating synchronously with the substrate holding unit.
[Problem] To freeze droplets of a raw material liquid while maintaining an ultra-high cooling speed with a short fall distance so as to not alter characteristics of a solute or dispersoid. [Solution] A vacuum freeze-drying method according to an embodiment of the present invention comprises: a step for ejecting a raw material liquid into a vacuum tank from a spray nozzle to produce frozen fine particles due to self-freezing of the raw material liquid, and drying the frozen fine particles thus produced to produce dried powder. The raw material liquid is ejected from the spray nozzle such that the initial ejection speed of the raw material liquid from the spray nozzle is 6-33 m/sec with the inside of the vacuum tank maintained at a partial water vapor pressure corresponding to the spontaneous freezing temperature of the raw material liquid. When the maximum diameter of the frozen fine particles thus produced exceeds a predetermined value, or when the droplets of the raw material liquid are not frozen, the ejection flow rate of the raw material liquid or the properties of the spray nozzle is adjusted such that frozen fine particles are produced so as to have a maximum diameter not more than the predetermined value.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
F26B 17/10 - Machines ou appareils à mouvement progressif pour le séchage d'un matériau en vrac, à l'état plastique ou sous forme fluidisée, p.ex. granulés, fibres brutes le mouvement étant réalisé par des courants de fluides, p.ex. provenant d'une tuyère
F26B 25/00 - SÉCHAGE DE MATÉRIAUX SOLIDES OU D'OBJETS PAR ÉLIMINATION DU LIQUIDE QUI Y EST CONTENU - Parties constitutives d'application générale non couvertes par un des groupes ou
[Problem] To homogenize film thickness distribution. [Solution] This film forming method involves film forming by sputtering on a substrate using a plurality, at least three, of rotary targets that each have a central shaft and a target surface and are provided, in the interior, with a magnet that is able to rotate about the central shaft. The plurality of rotary targets are arranged so that the central shafts are parallel to one another and are also parallel to the substrate. The film forming by sputtering is performed on the substrate as power is being fed to the plurality of rotary targets and the respective magnets of the plurality of rotary targets are being moved over an arc that has an A-point closest to the substrate about the central shafts. Magnets of at least a pair of rotary targets arranged at two ends, among the plurality of rotary targets, have a shorter duration of film forming in a region that is further apart from the center of the substrate than the A-point on the arc than a duration of film forming in a region closer to the center of the substrate than the A-point.
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
35.
METAL WIRING STRUCTURE, MANUFACTURING METHOD FOR METAL WIRING STRUCTURE, AND SPUTTERING TARGET
[Problem] To provide a metal wiring structure that has low electrical resistance, excellent heat resistance, and flexibility, and a manufacturing method for said metal wiring structure. [Solution] To achieve the above objective, a metal wiring structure according to the present invention is equipped with a metal wiring film having a main component comprising aluminum and an additive element that is added to said main component and comprises 0.005 at% to 0.88% of iron, and a first cap layer that is laminated on said metal wiring film. According to such a metal wiring structure, a metal wiring structure is provided that has low electrical resistance, excellent heat resistance, and flexibility.
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/3205 - Dépôt de couches non isolantes, p.ex. conductrices ou résistives, sur des couches isolantes; Post-traitement de ces couches
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
C23C 14/14 - Matériau métallique, bore ou silicium
11 configured so as to be capable of suppressing damage to an organic layer as much as possible for a case in which a transparent conductive oxide film is formed on a surface of the organic layer. A cathode unit Sc is provided with cylindrical targets Tg1, Tg2 arranged side by side with gap therebetween in the X-axis direction. Driving means Db1, Db2 that rotationally drive each cylindrical target around the Y-axis are provided, and magnet units Mu1, Mu2 are respectively assembled inside each cylindrical target. The magnet units forming a pair respectively have a central magnet 5a and peripheral magnets 5b, and form a tunnel-shaped magnetic field Mf in a space between the cylindrical target and a film formation surface. The magnet units forming a pair are configured such that the magnetic field strength of a Z-axis component becomes zero on the Z-axis passing through a position at which the film thickness is maximized at the film formation surface when a film is formed on an object Sw, on which a film is to be formed, in a state where the object Sw is stationary and opposing the cathode unit.
H01L 51/50 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED)
H05B 33/10 - Appareils ou procédés spécialement adaptés à la fabrication des sources lumineuses électroluminescentes
37.
NANOTUBE MEDIATED DELIVERY SYSTEM AND METHODS COMPRISING THE SAME
COMMONWEALTH SCIENTIFIC AND INDUSTRIAL RESEARCH ORGANISATION (Australie)
MONASH UNIVERSITY (Australie)
ULVAC, INC. (Japon)
Inventeur(s)
Voelcker, Nicolas Hans
Elnathan, Roey
Aslanoglou, Stella
Chen, Yaping
Abrégé
The present disclosure relates generally to a molecular delivery system and methods of using the molecular delivery system to deliver biomolecules into cells. In particular, the molecular delivery system comprises a nanotube (NT) array comprising a plurality of nanotubes (NTs) which are used to deliver biomolecules to cells. The NTs can be loaded with molecules that can be delivered into cells following contact (e.g. penetration) by the NTs.
C12N 15/89 - Introduction de matériel génétique étranger utilisant des procédés non prévus ailleurs, p.ex. co-transformation utilisant la micro-injection
B82Y 5/00 - Nanobiotechnologie ou nanomédecine, p.ex. génie protéique ou administration de médicaments
An evaporation source according to the present invention is for being heated by an electron beam in vacuo to evaporate or sublimate an evaporating material, and forming a compound film on a surface of a moving substrate by codeposition, the compound film containing lithium. A hearth liner provided with a cooling part, and a plurality of liners which are housed in the hearth liner, and inside which the evaporating material is put are included.
A thin film manufacturing apparatus according to the present invention forms a thin film by adhering film-forming particles to one surface of a substrate moving in a sealable chamber, the apparatus having a plasma generating unit, a substrate moving unit, a film-forming source supply unit, and a film formation region defining unit. The plasma generating unit includes a magnet located on the other surface side of the substrate and a gas supply unit that supplies a film-forming gas to the vicinity of the one surface of the substrate. The film formation region defining unit has a shielding portion that is located near the one surface of the substrate and has an opening. The ratio of the diameter dimension of the opening in the shielding portion to the diameter dimension of the plasma, which is generated by the plasma generating unit, in the direction along the one surface of the substrate is set in the range of 110/100 or less.
C23C 14/32 - Evaporation sous vide par évaporation suivie d'une ionisation des vapeurs
C23C 14/04 - Revêtement de parties déterminées de la surface, p.ex. au moyen de masques
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
A film forming apparatus according to the present invention comprises a transport unit that transports a substrate, a film forming unit for forming an electrolyte film in a film forming region of the substrate transported by the transport unit, and a foreign matter removing unit that comes into contact with the electrolyte film on the substrate transported by the transport unit after the film has been formed in the film forming unit to remove foreign matter contained in the film forming region.
H01M 6/02 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Éléments primaires; Leur fabrication - Détails
H01M 6/18 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Éléments primaires; Leur fabrication Éléments avec électrolytes non aqueux avec électrolyte solide
A measurement abnormality detection device can produce a plurality of specimens from a resonance characteristic value. The plurality of specimens are to be treated as a group of specimens obtained in chronological order, wherein each of the specimens has two or more dimensions that are different from each other. The measurement abnormality detection device is equipped with an abnormality detection unit (24) which utilizes a detection character space that is expressed by all of the dimensions of the specimens to determine whether or not a specimen outside the detection character space is included in a group of specimens obtained by a measurement unit by the theoretical calculation employing the group of specimens and the detection character space.
C23C 14/54 - Commande ou régulation du processus de revêtement
G01B 7/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
G01N 5/02 - Analyse des matériaux par pesage, p.ex. pesage des fines particules séparées d'un gaz ou d'un liquide en absorbant ou adsorbant les constituants d'un matériau et en déterminant la variation de poids de l'adsorbant, p.ex. en déterminant la teneur en eau
42.
ALUMINUM ALLOY TARGET, ALUMINUM ALLOY WIRING FILM, AND METHOD FOR PRODUCING ALUMINUM ALLOY WIRING FILM
[Problem] To provide: an aluminum alloy target having low resistance and excellent heat resistance and flexibility; an aluminum alloy wiring film; and a method for producing an aluminum alloy wiring film. [Solution] In order to achieve the above-mentioned purpose, an aluminum alloy target according to one embodiment comprises a main ingredient which comprises aluminum and an element group which is added to the main ingredient and comprises 0.005 at% to 0.88% inclusive of iron and 0.01 at% to 0.05 at% inclusive of vanadium. By using the aluminum alloy target, an aluminum alloy wiring film having low resistance and excellent heat resistance and flexibility can be formed.
Provided is a film formation method in which, when a dielectric film is formed by target sputtering, it is possible to minimize the number of particles adhered immediately after film formation to a substrate surface that has been treated, without compromising the function of effectively suppressing the induction of abnormal discharge. This film formation method is for forming a dielectric film on a substrate Sw surface that is subjected to treatment by sputtering a target 2 in a vacuum chamber 1, and the method is configured so that a negative potential is applied in a pulsed form to a target during the sputtering of the target, the frequency at which the negative potential is applied in the pulsed form is set to 100-150 kHz, and the duration Ton of the negative potential application is set to a range which is longer than 5 μsec but shorter than 8 μsec.
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
H01L 21/318 - Couches inorganiques composées de nitrures
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p.ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
[Problem] To stably control a vapor deposition rate. [Solution] A film forming device includes a vacuum container, a film forming source, an accommodation container, a film thickness sensor, and a film thickness controller. The film forming source is accommodated in the vacuum vessel. The accommodation container is accommodated in the vacuum container and can be maintained at a pressure higher than the pressure in the vacuum container. The film thickness sensor includes a vibrator having a resonance frequency, and a film forming material released from the film forming source is deposited on the vibrator in the film thickness sensor. The film thickness controller is accommodated in the accommodation container, and calculates the amount of the film forming material released from the film forming source on the basis of a change in the oscillation frequency due to the deposition of the film forming material.
C23C 14/52 - Dispositifs pour observer le processus de revêtement
H03H 3/02 - Appareils ou procédés spécialement adaptés à la fabrication de réseaux d'impédance, de circuits résonnants, de résonateurs pour la fabrication de résonateurs ou de réseaux électromécaniques pour la fabrication de résonateurs ou de réseaux piézo-électriques ou électrostrictifs
122 for a vacuum evaporation system DM for vapor deposition on a film formation object Sw within a vacuum chamber Vc is provided with: a main cylindrical body 6 having a crucible part 61 which is filled with an evaporation material Em; a secondary cylindrical body 7 which is provided on a part of the main cylindrical body positioned above the evaporation material so as to protrude from a main cylindrical body, while having a discharge opening 75; and a heating means 8a which is capable of heating the evaporation material filled in the crucible part. This evaporation source is configured such that: a secondary cylindrical body is able to be attached to the main cylindrical body in a freely attachable and detachable manner, while changing the phase of the discharge opening; a cover member 62 that openably/closably covers an upper opening 61a of the crucible part is provided; the evaporation material is sublimated or vaporized by heating the evaporation material within the crucible part by means of the heating means in a vacuum atmosphere, while closing the upper opening of the crucible part by means of the cover member; and the sublimated or vaporized evaporation material is transferred to the secondary cylindrical body, while maintaining the vapor pressure, and is subsequently discharged from the discharge opening.
[Problem] To curb blockage of an ejection nozzle by a vapor deposition material. [Solution] A vapor deposition source, in which a vaporization vessel comprises: a vessel body including a bottom section and a side wall section that is provided continuously from the bottom section; and a top plate which faces the bottom section and to which an ejection nozzle is disposed. A vapor deposition material is accommodated in a space surrounded by the vessel body and the top plate. A first heating mechanism faces the side wall section. A second heating mechanism is provided so as to face respective side sections of the top plate and the ejection nozzle, and so as to be spaced apart from the first heating mechanism in the direction from the bottom section toward the top plate. A first reflector faces the first heating mechanism and is disposed to the side opposite the side wall section. A second reflector faces the second heating mechanism and is disposed to the side opposite the side sections, and is disposed so as to be spaced apart in the above-mentioned direction from the first reflector.
This ion gun is provided with: an anode; a magnetic pole that includes an inner surface facing the anode, a slit disposed at a position corresponding to the anode, and an inner oblique surface extending from one end of the inner surface toward the slit and forming a part of the slit; and a cover that covers at least part of the inner surface and the inner oblique surface, that is formed from an electrically conductive and non-magnetic material, and that can be removed from and attached to the magnetic pole.
Provided is a vacuum treatment device which can have a structure having good maintenance performance even when a communicating tube is arranged between a vacuum chamber and a treatment unit. A vacuum treatment device SM according to the present invention, which can subject a surface to be treated of a substrate Sw of interest to a specific vacuum treatment, is provided with: a vacuum chamber Pc3 in which the substrate of interest is placed and an installation opening 12 that faces the surface to be treated is formed in an upper wall wherein the direction that the surface to be treated faces is defined as an upper direction; a treatment unit CU for performing a vacuum treatment; and a communicating tube 3 which is arranged between the vacuum chamber and the treatment unit and has a specified length. The vacuum treatment device is so configured that the substrate of interest which is placed in the vacuum chamber under a vacuum atmosphere can be subjected to a specific vacuum treatment via the communicating tube, a rotary arm 74 which can slide around a rotary shaft 72 that extends vertically intersecting the rotary arm is connected to the treatment unit, and the vacuum treatment device is further provided with engaging means 41 to 44 and 5 each for engaging the vacuum chamber and the communicating tube with each other or the treatment unit and the communicating tube with each other in a selective manner.
A method of depositing a sub-stoichiometric metal-oxide, the method comprising: selecting a first precursor comprising a metal and a first ligand; selecting a second precursor comprising the metal and a second ligand; exposing a substrate(102) to the first precursor during a first pulse of an atomic layer deposition cycle; exposing the substrate(102) to the second precursor during a second pulse of the atomic layer deposition cycle, the second pulse occurring directly after the first pulse; and exposing the substrate(102) to an oxidant during a third pulse of the atomic layer deposition cycle.
In this suction device for cooling a substrate using a cooling gas, there is provided a technique for improving the cooling efficiency of the substrate by preventing a leak of the cooling gas. In the present invention, in a state in which a substrate 10 is not supported, raising and lowering members 15 are configured so that connection sections 15a are each disposed inside a guide section 53 of a guide through-hole 52, and substrate support sections 15b are each disposed inside an accommodation section 54 of the guide through-hole 52. O-rings 17 are provided between the connection sections 15a and the substrate support sections 15b of the raising and lowering members 15, the O-rings each sealing the accommodation section 54 of the guide through-hole 52 with respect to the guide section 53 by bringing the connection section 15a of each raising and lowering member 15 into close contact with a support wall section 55 provided to the accommodation section 54 of the guide through-hole 52, and supporting the connection section.
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
51.
SPUTTERING TARGET AND SPUTTERING TARGET PRODUCTION METHOD
[Problem] To provide: a sputtering target for producing a high performance oxide semiconductor thin film that serves as a substitute for IGZO; and a method for producing such a sputtering target. [Solution] In order to achieve the objective, the sputtering target according to one mode of the present invention is formed of an oxide sintered body including indium, tin, and germanium, wherein the atom ratio of germanium with respect to the total of indium, tin, and germanium is 0.07-0.40, and the atom ratio of tin with respect to the total of indium, tin, and germanium is 0.04-0.60. Accordingly, it is possible to obtain a transistor characteristic of having a mobility of 10 cm2/Vs or more.
C04B 35/01 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
52.
SPUTTERING TARGET AND SPUTTERING TARGET MANUFACTURING METHOD
[Problem] To more reliably suppress the intrusion of a bonding material into a gap that is formed between adjacent target members. [Solution] A backing tube is cylindrical, and a plurality of recesses are formed in the outer circumferential surface of the backing tube. A target body includes a plurality of cylindrical target members that surround the outer circumferential surface of the backing tube, and the plurality of target members are arranged so as to be separated from each other. A gap which is formed between adjacent target members when the plurality of target members are aligned in a central axis direction extends around the central axis of the backing tube, and the gap intersects the plurality of recesses. A bonding material is provided between the backing tube and the target body so as to bond the backing tube and the plurality of target members to each other. A shielding member is disposed between the bonding material and the target body so as to lay across the plurality of recesses, and the shielding member shields the gap from the bonding material side.
C04B 35/01 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
53.
SPUTTERING TARGET AND SPUTTERING TARGET MANUFACTURING METHOD
[Problem] To suppress peeling of a shielding member. [Solution] A sputtering target wherein a target body comprises a plurality of cylindrical target members that surround the outer circumferential surface of a cylindrical backing tube, and the plurality of target members are arranged so as to be separated from each other in a central axis direction of the backing tube. A gap which is formed between adjacent target members when the plurality of target members are aligned in the central axis direction extends around the central axis of the backing tube, and recesses which are in communication with the gap are formed on the backing tube side. A bonding material is provided between the backing tube and the target body so as to bond the backing tube and the plurality of target members to each other. A shielding member is disposed between the bonding material and the target body, is accommodated in the recesses, and shields the gap from the bonding material side.
C04B 35/01 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
54.
SPUTTERING TARGET AND SPUTTERING TARGET MANUFACTURING METHOD
[Problem] To provide a sputtering target with which particles and abnormal discharge can be suppressed even if the sputtering target is long and cylindrical. [Solution] A sputtering target, wherein a target body comprises a plurality of target members that are arranged along the outer circumferential surface of a cylindrical backing tube, and that have a circular arc-shaped cross section. The plurality of target members are each disposed so as to be separated from each other around a central axis of the backing tube. A gap that is formed between the target members which are aligned around the central axis extends in the central axis direction of the backing tube. A bonding material is interposed between the backing tube and the target body so as to bond the backing tube and the plurality of target members to each other. A shielding member is provided between the bonding material and the target body so as to shield the gap from the bonding material side.
C04B 35/01 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
55.
SPUTTERING APPARATUS AND METHOD FOR PRODUCING THIN FILM
114211422; the polarity and the magnetic field strength of the magnetic pole formed in the electromagnet part 73 are controlled by controlling the direction and the magnitude of the excitation current flowing through the electromagnet part 73; the magnetic field strength formed by the variable magnets 47 is decreased by means of increase of a film formation object 13 due to the sputtering; and consequently, the magnetic field strength on a sputtering surface 24 is evened out.
12122. Cross-sections of the flow paths along an axial direction thereof overlap with cross-sections of the cover bodies, and the cross-sectional area of the space formed between the inner cylinder body and the outer cylinder body and communicating with the flow paths is set so as to obtain a predetermined flow rate.
A deposition unit with high versatility and excellent maintainability is provided. This deposition unit VU is provided with a storage box 3 in which a deposition material Vm is stored, and a heating means 4 which heats the deposition material in the storage box; a discharge opening 34c formed on one side of the storage box discharges deposition material that has been sublimated or vaporized by heating. The deposition unit VU is further provided with a moving means 5 which is disposed inside of a storage chamber 30 open on one side, and which, defining the direction in which the opening in the storage chamber faces as up, advances and retracts the deposition unit up and down, the deposition unit being provided in the storage chamber in an attitude in which the discharge opening is in phase with the opening in the storage chamber.
[Problem] To provide a vapor deposition source and a vapor deposition device capable of long-term continuous production of a thin film having a uniform film thickness distribution. [Solution] A vapor deposition source is equipped with a housing box, a first nozzle group, and a second nozzle group. The housing box houses a vapor deposition material for forming a film on an object on which a vapor deposition is to be performed. The first nozzle group comprises multiple first nozzles disposed in a center region of the housing box in one direction and each having a first nozzle hole. The second nozzle group comprises multiple second nozzles disposed in side regions located on both outer sides of the center region of the housing box in the one direction and each having a second nozzle hole. The interval between second nozzles respectively positioned on both ends of the housing box in the one direction is longer than the length of the object in the one direction. The open ends of the second nozzles through which a vaporized substance of the vapor deposition material is discharged are configured so that the height of the second nozzles from an imaginary reference plane orthogonal to a hole axis of the second nozzle holes is lower at a part positioned on the outer side in the one direction than at a part positioned on the center region side.
H05B 33/10 - Appareils ou procédés spécialement adaptés à la fabrication des sources lumineuses électroluminescentes
H01L 51/50 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED)
In the present invention, electrode films 32, 51, 52 and a wiring film 35 are each obtained by providing a Cap film 38, 48 upon a base film 39, 49, and the resistance value of the base film 39, 49 is lower than that of the Cap film. The Cap film 38, 48 is formed by sputtering a Cu alloy target 88c according to the present invention, which is composed of a Cap film alloy. The Cap film alloy contains more than 50 at% Cu per 100 at% of the number of atoms in the Cap film alloy, and if the Al content is 0.5 at% or higher, the Cap film alloy contains an additive metal including at least one among three metal materials, i.e. at least 0.5 at% Mg, at least 0.5 at% Si and/or at least 3 at% Ni, or contains 0.5 at% Ca as the additive metal. The Cap film 38, 48 and a Si oxide thin film formed upon the cap film 38, 48 by CVD have a high adhesive strength and do not delaminate.
In the present invention, an adhesion film 37 is formed on the surface of a substrate 31 composed of glass and/or resin by sputtering using a Cu alloy target created from an adhesion film alloy obtained by including additive metals in Cu. The additive metals include at least two metals among 0.5-6 at% Mg, 1-15 at% Al and 0.5-10 at% Si. The adhesion film 37 strongly adheres to the substrate 31, and delamination does not occur.
The present invention provides a method for producing a back contact solar cell, which is able to be carried out with fewer steps than conventional production methods. The present invention is a method for producing a back contact solar cell, which sequentially comprises: a step (A) for forming an oxide film (20) on the back surface of a crystal silicon substrate (10); a step (B) for forming a silicon thin film layer (30A) on the exposed surface of the oxide film (20); a step (C) for forming an n+layer (40) partially in the silicon thin film layer (30A) by an ion implantation method using a mechanical hard mask and activation annealing; a step (D) for forming passivation films (50) on both surfaces of the crystal silicon substrate (10) obtained in the step (C), said crystal silicon substrate (10) having the oxide film (20), the silicon thin film layer (30B) and the n+layer (40); and a step (E) for forming one or more aluminum electrodes (60B) on the silicon thin film layer (30B), which is exposed by removing a part of a region of the passivation film (50) that is formed on the back surface of the crystal silicon substrate (10), said region not covering the n+ layer (40).
H01L 31/068 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type homojonction PN, p.ex. cellules solaires à homojonction PN en silicium massif ou cellules solaires à homojonction PN en couches minces de silicium polycristallin
Provided is a vacuum vapor deposition device in which, when vapor deposition is being performed on a part of a sheet-like substrate wound around a can roller, atmosphere can be separated between a vapor deposition chamber having a vapor deposition unit disposed therein and an adjacent chamber that is adjacent to the vapor deposition chamber and that is in a main chamber. The present invention is provided with: a main chamber 1 having a substrate traveling means and a can roller 2; and a vapor deposition unit Vu that performs vapor deposition on a part of the sheet-like substrate Sw wound around the can roller. Further provided in the main chamber are: first partition walls 75 for demarcating the vapor deposition chamber in which the vapor deposition unit is stored; and second partition walls 7a, 7b that are disposed contiguous to the first partition walls and that cover outer cylinder parts of the can roller located on both sides, in the circumferential direction, of the vapor deposition unit with a first gap Gp1 interposed between the second partition walls 7a, 7b and the outer cylinder parts of the can roller, the first gap Gp1 being curved at a certain curvature. The vapor deposition chamber Vs and the adjacent chamber As that is in the main chamber and that is adjacent to the vapor deposition chamber are connected to each other with the first gap as a boundary therebetween. The second partition walls are configured such that conductance between the vapor deposition chamber and the adjacent chamber is determined.
This film forming device comprises a chamber having a film forming room; a stage supporting a substrate; a light source unit; a gas supplying unit; and a heating unit. The light source unit includes an irradiation source that irradiates energy rays, and is disposed opposite the film forming room. The gas supplying unit includes a shower plate and a gas diffusion chamber. The shower plate includes a first surface opposite the light source unit, a second surface opposite the stage, and a plurality of through-holes penetrating the first surface and the second surface, and allows the energy rays to pass through. The gas diffusion chamber faces the first surface and diffuses a raw material gas including an energy ray curing resin that cures as a result of being irradiated by the energy rays. The gas supplying unit supplies the raw material gas from the gas diffusion chamber to the film forming room. The heating unit heats the first surface of the shower plate.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
A plasma CVD apparatus (10) includes: a vacuum chamber (21) that defines a space that accommodates a film-forming subject (S); a storage part (30) that stores an isocyanate silane that does not contain hydrogen the storage part (30) generating an isocyanate silane gas to be supplied to the vacuum chamber (21) by heating the isocyanate silane in the storage part (30); piping (11) that connects the storage part (30) to the vacuum chamber (21) and that supplies the isocyanate silane gas generated in the storage part (30) to the vacuum chamber (21); a temperature controller (12) that adjusts the temperature of the piping (11) to be 83-180ºC; an electrode (22) that is disposed in the vacuum chamber (21); and a power source (23) that supplies high-frequency power to the electrode (22). In the vacuum chamber (21), the pressure in the vacuum chamber (21) is equal to or greater than 50 Pa and less than 500 Pa when forming a silicon oxide film on the film-forming subject (S).
C23C 16/509 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes internes
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
H01L 21/336 - Transistors à effet de champ à grille isolée
Provided is a compact mass-producible vacuum-freeze drying device capable of freezing droplets of a raw material liquid at a short falling distance in a short time. The vacuum-freeze drying method according to the present invention comprises a step for producing a dry powder by: spaying droplets of a raw material liquid through an injection nozzle (20) in a freezing chamber (2) which is a vacuum tank; generating frozen fine particles (35) through self-freezing in low-temperature vacuum; and drying the generated frozen fine particles (35). In the present invention, the diameters of the droplets of the raw material liquid discharged downward through the injection nozzle (20) are adjusted to 1000 µm or less and the initial speed of the droplets is adjusted to 8-22 m/second, in a state where the partial pressure of water vapor in the freezing chamber (2) is maintained at 60 Pa or lower.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
F26B 17/10 - Machines ou appareils à mouvement progressif pour le séchage d'un matériau en vrac, à l'état plastique ou sous forme fluidisée, p.ex. granulés, fibres brutes le mouvement étant réalisé par des courants de fluides, p.ex. provenant d'une tuyère
The present invention provides a technique whereby dust generation during conveyance of a substrate holder can be suppressed in a vacuum processing apparatus for conveying a plurality of substrate holders along a conveyance path formed so that the projected shape thereof on a vertical surface is a continuous ring shape. The present invention has, in a vacuum tank 2 which has a conveyance path formed so that the projected shape thereof on a vertical surface is a continuous ring shape, and in which in which a single vacuum atmosphere is formed, an anti-sag member 35 assembled to a first drive part 36 provided on the outside with respect to the conveyance direction of the conveyance path. A travel roller 54 of the anti-sag member 35 travels while being guided and supported by a guide part 17 which is provided below a return-path-side conveyance part 33c positioned on the lower side of a substrate holder conveyance mechanism 3 and which extends in a second conveyance direction P2, and the first drive part 36 is configured so as to come in contact with a first driven part 12 of a substrate holder 11 and drive the substrate holder 11 along the conveyance path in the second conveyance direction P2.
C23C 14/56 - Appareillage spécialement adapté au revêtement en continu; Dispositifs pour maintenir le vide, p.ex. fermeture étanche
B65G 17/06 - Transporteurs comportant un élément de traction sans fin, p.ex. une chaîne transmettant le mouvement à une surface porteuse de charges continue ou sensiblement continue, ou à une série de porte-charges individuels; Transporteurs à chaîne sans fin dans lesquels des chaînes constituent la surface portant la charge avec une surface portante formée par une série de maillons, de plaques ou plates-formes reliés entre eux, p.ex. longitudinaux
B65G 17/48 - Contrôle de l'assiette des porte-charges durant leur déplacement
B65G 49/07 - Systèmes transporteurs caractérisés par leur utilisation à des fins particulières, non prévus ailleurs pour des matériaux ou objets fragiles ou dommageables pour des plaquettes semi-conductrices
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p.ex. entre différents postes de travail
[Problem] To provide a vapor deposition device that suppresses the effect of a large spreading angle of a vapor deposition material. [Solution] A substrate holding device according to one mode of the present invention comprises an evaporation source, a supporting mechanism, limiting plates, and a chamber. The evaporation source is equipped with a heating mechanism that houses a vapor deposition material and heats the vapor deposition material. The supporting mechanism supports the vapor deposition target at a position facing the evaporation source. The limiting plates are disposed on the vapor deposition target side relative to the midpoint between the evaporation source and the vapor deposition target and limits the spreading path of the vapor deposition material. The chamber houses the evaporation source, the supporting mechanism, and the limiting plates.
H01L 51/50 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED)
H05B 33/10 - Appareils ou procédés spécialement adaptés à la fabrication des sources lumineuses électroluminescentes
This vacuum processing device performs plasma processing. The vacuum processing device has: an electrode flange connected to a high-frequency power supply; a shower plate that is set apart from and faces the electrode flange, the shower plate serving as a cathode together with the electrode flange; an insulation shield provided around the shower plate; a processing chamber in which a substrate being processed is disposed on the side of the shower plate that is opposite from the electrode flange; an electrode frame attached to the shower-plate side of the electrode flange; and a slide plate attached to the peripheral edge part, on the electrode-frame side, of the shower plate. The shower plate is formed so as to have a substantially rectangular outline. The electrode frame and the slide plate can be made to slide in correspondence with thermal deformation occurring when the temperature of the shower plate increases or decreases, and the space surrounded by the shower plate, the electrode flange, and the electrode frame can be sealed. The electrode frame has: a frame-shaped upper plate surface section attached to the electrode flange; a vertical plate surface section provided upright toward the shower plate from the entire periphery of the outside of the outline of the upper plate surface section; and a lower plate surface section extending, substantially parallel to the upper plate surface section, from the lower end of the vertical plate surface section toward the inside edge of the outline of the upper plate surface section.
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p.ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques
70.
VACUUM PROCESSING DEVICE, CLEANING METHOD FOR VACUUM PROCESSING DEVICE
This vacuum processing device is for performing plasma processing. A vacuum processing device that has an electrode flange that is connected to a high-frequency power supply, a shower plate that is opposite the electrode flange with a gap therebetween and that acts as a cathode with the electrode flange, an insulating shield that is provided around the shower plate, a processing chamber in which a substrate to be processed is arranged on the opposite side of the shower plate from the electrode flange, an electrode frame that is attached to the shower plate side of the electrode flange, and a slide plate that is attached to a peripheral edge part of the shower plate that is on the electrode frame side. The electrode frame and the slide plate can slide in accordance with thermal deformation that occurs when the temperature of the shower plate rises/falls, and a space that is enclosed by the shower plate, the electrode flange, and the electrode frame can be sealed. The shower plate is supported on the electrode frame by a support member that passes through a long hole that is provided in the peripheral edge part of the shower plate. The long hole is formed such that the support member is capable of relative movement inside the long hole in accordance with thermal deformation that occurs when the temperature of the shower plate rises/falls. The long hole is provided with a gas hole that communicates with and supplies a purge gas to the long hole. The gas hole communicates with a space that is enclosed by the shower plate, the electrode flange, the electrode frame, and the slide plate.
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques
Provided is a vacuum processing apparatus capable of baking a deposition preventive plate provided within a vacuum chamber, without compromising a function for cooling the deposition preventive plate. A vacuum processing apparatus SM according to the present invention includes a vacuum chamber 1, and performs predetermined vacuum processing on a substrate Sw to be processed which is set within the vacuum chamber. The vacuum processing apparatus SM further includes a deposition preventive plate 82 provided within the vacuum chamber, a metal block 9 disposed vertically on a lower wall inner surface 13 of the vacuum chamber and facing a portion of the deposition preventive plate with a gap therebetween, a cooling means 11 that cools the block, and a heating means 10 which is disposed between the portion of the deposition preventive plate and the block and capable of heating the deposition preventive plate through radiation of heat, wherein the block and a surface portion of the deposition preventive plate facing each other include high emissivity layers 93 and 84, respectively, each having an emissivity increased by surface-treating respective base metals of the block and the deposition preventive plate.
C23C 14/00 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement
H01L 21/203 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
Provided is a sputtering device with which it is possible to improve the utilization efficiency of a target without detriment to the function of being able to symmetrically form a predetermined thin film with good coverage on the bottom surface and side surfaces of holes and trenches formed on the surface of the substrate to be treated. This sputtering device SM comprises a vacuum chamber 1 in which a target 21 is positioned, a plasma atmosphere is formed in the interior of the vacuum chamber and the target is subjected to sputtering, and sputter particles splashed from the target are adhered to and deposited on the surface of a substrate Sw positioned within the vacuum chamber, forming a predetermined thin film. An adhesion body 61 made from the same material as the target is provided, and at least the adhesion body 61a of the adhesion body 61, onto which sputter particles sprayed from the target are adhered, is positioned at a predetermined position within the vacuum chamber, and a bias power supply 62 which applies a bias voltage having a negative potential when forming a plasma atmosphere is connected to the adhesion body.
[Problem] A film is formed on a substrate with high productivity and a more uniform film thickness distribution. [Solution] In this film forming device, a substrate holder supports at least one substrate facing a first target, rotates about a first central axis, and is configured such that the substrate can rotate about a second central axis deviated from the first central axis. A vacuum container accommodates the first target and the substrate holder. The power source supplies discharge power to the first target. A gas supply mechanism supplies discharge gas to the vacuum container. When the distance between the first central axis and the second central axis in a direction orthogonal to the first central axis is Ds, the distance between the first central axis and the center of the first target in the direction orthogonal to the first central axis is Dt, the radius of the first target is R, the distance between the first target and the substrate in a direction of the first central axis is H, and the absolute value of the difference between Ds and Dt is A, the relational expressions of Ds + Dt ≥ H, A ≥ R, and H ≥ R are satisfied.
H01L 21/203 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
74.
DEPOSITION PREVENTING MEMBER AND VACUUM PROCESSING DEVICE
The present invention provides a feature capable of suppressing particles which are generated from a deposition preventing member positioned in an electrical discharge space during vacuum processing. The deposition preventing member 30 according to the present invention comprises a frame-shaped deposition preventing main member 10, and a frame-shaped holding member 20 which holds the deposition preventing main member 10 in a state in which the same is attached to an electrical discharge space 9 side inside a vacuum chamber 6. The deposition preventing main member 10 is affixed by a plurality of supporting bolts 23 from a surface on an opposite side to an electrical discharge space 9 side surface, or in other words, a rear side surface 20R of the holding member 20, and, said supporting bolts 23 are configured such that respective tip parts thereof are not exposed on the electrical discharge space 9 side from an electrical discharge space 9 side surface, or in other words, a front side surface 10F of the deposition preventing main member 10.
222effeffeff represents an effective refractive index of the two-dimensional photonic crystal, and a represents a two-dimensional photonic crystal cycle) satisfies m=3, and a R/a ratio satisfies 0.3≤R/a≤0.4 when R represents the radius of the hole; an aluminum nitride ceramic package that has a surface having the deep ultraviolet LED element mounted thereon, that has an inorganic paint coating film having a reflection rate of 91% or higher, and that has an angle of the inner side wall of the package of 60-75°; and a quartz window that is provided to the outermost surface of the aluminum nitride ceramic package and that seals the deep ultraviolet LED element.
H01L 33/10 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure réfléchissante, p.ex. réflecteur de Bragg en semi-conducteur
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
H01L 33/54 - Encapsulations ayant une forme particulière
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
76.
VACUUM GAUGE AND PRESSURE MEASUREMENT SYSTEM COMPRISING VACUUM GAUGE
Provided are a vacuum gauge that makes it possible to simply set and change a setting value and a pressure measurement system comprising the vacuum gauge. The vacuum gauge PG has a body 1 attached to an object Vc under measurement and measures the internal pressure of the body 1. Provided inside the body are: a sensor unit 20 that operates by receiving supplied power; a control unit 30 that controls the operation of the sensor unit, processes input from the sensor unit, and outputs a prescribed signal; and a first power supply circuit unit 40 that receives power supplied from an external power supply 41 and supplies power to the control unit and sensor unit. Further provided inside the body are: a second power supply circuit unit 50 that is connected to a terminal device Mt through wiring or wirelessly, receives power from the terminal device, and at least supplies power to the control unit and a communication circuit unit 60 that, if power is supplied to the control unit through the first power supply circuit unit or second power supply circuit unit, connects the control unit to the terminal device via a communication line 61 such that the terminal device and control unit can communicate freely.
G01L 9/00 - Mesure de la pression permanente, ou quasi permanente d’un fluide ou d’un matériau solide fluent par des éléments électriques ou magnétiques sensibles à la pression; Transmission ou indication par des moyens électriques ou magnétiques du déplacement des éléments mécaniques sensibles à la pression, utilisés pour mesurer la pression permanente ou quasi permanente d’un fluide ou d’un matériau solide fluent
This film-forming apparatus according to one embodiment comprises: a chamber; a stage; a light source unit; a gas supply unit; and a cleaning unit. The chamber includes a chamber body having a film-forming chamber, and a top plate that has a window section and that is attached to the chamber body. The stage includes a support surface that is disposed in the film-forming chamber and that supports a substrate. The light source unit includes an irradiation source that is installed at the top plate and that irradiates an energy beam onto the support surface via the window section. The gas supply unit supplies, to the film-forming chamber, a raw material gas containing an energy beam-curable resin that is cured by being irradiated with the energy beam. The cleaning unit is connected to the chamber and introduces, to the film-forming chamber, a cleaning gas that removes the energy beam-curable resin that has adhered to the top plate and to the chamber.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
78.
ELECTROSTATIC CHUCK, VACUUM PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
The present invention provides: an electrostatic chuck which stably supports a substrate, while suppressing a rapid increase in the volume of a gas; a vacuum processing apparatus; and a substrate processing method. An electrostatic chuck according to the present invention is provided with a chuck plate which has a first surface that supports a substrate and a second surface that is on the reverse side of the first surface. The chuck plate is provided with an exhaust passage which releases a gas from a space between the substrate and the first surface, said gas being discharged from the substrate in the space between the substrate and the first surface when the substrate is supported by the first surface.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
[Problem] To form a resin layer on a substrate with a good film thickness distribution. [Solution] A cooling stage of a film forming apparatus according to the present invention has a supporting surface that supports a substrate and a lateral part that is continuous with the supporting surface; and the cooling stage is configured such that the outer edge of the substrate supported by the supporting surface protrudes beyond the lateral part. A deposition prevention frame unit has an annular shape and is arranged so as to surround the lateral part of the cooling stage, while being provided with a recess in a position facing the outer edge of the substrate; and the lateral part is surrounded by the recess. A gas supply unit supplies a starting material gas that contains an energy ray-curable resin toward the supporting surface. An irradiation source faces the supporting surface and irradiates the supporting surface with an energy ray that cures the energy ray-curable resin. A vacuum tank contains the cooling stage, the deposition prevention frame unit, the gas supply unit and the irradiation source.
B05C 9/12 - Appareillages ou installations pour appliquer des liquides ou d'autres matériaux fluides aux surfaces par des moyens non prévus dans l'un des groupes , ou dans lesquels le moyen pour déposer le liquide ou autre matériau fluide n'est pas important pour appliquer un liquide ou autre matériau fluide et exécuter une opération auxiliaire l'opération auxiliaire étant exécutée après l'application
B05C 11/10 - Stockage, débit ou réglage du liquide ou d'un autre matériau fluide; Récupération de l'excès de liquide ou d'un autre matériau fluide
B05D 3/00 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliqués; Traitement ultérieur des revêtements appliqués, p.ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides
B05D 3/06 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliqués; Traitement ultérieur des revêtements appliqués, p.ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par exposition à des rayonnements
Provided is a vacuum heating device having a reflector device for which damage due to thermal expansion does not occur. A plurality of unit reflectors 31 arranged in a matrix are mounted on a mounting surface 19 of a vacuum chamber 17 by a fixing device 21 and holding devices 11a to 11d. When the unit reflectors 31 are irradiated with infrared rays, along with the deformation of the deformable portions 64 of the holding devices 11a to 11d, each of the unit reflectors 31 thermally expand around the place where the fixing device 21 is mounted. Due to the thermal expansion, the force applied to each of the unit reflectors 31 is reduced and damage to the portion where each of the unit reflectors 31 is mounted on the mounting surface 19 is prevented.
Provided is a vacuum processing apparatus configured so that a movable deposition-preventing plate provided inside a vacuum chamber can be cooled with a simple structure. This vacuum processing apparatus SM, which has a vacuum chamber 1 and performs a prescribed vacuum processing on a substrate Sw to be processed that has been set inside said vacuum chamber, is provided with deposition-preventing plates 8 inside the vacuum chamber, the deposition-preventing plates being configured from a fixed deposition-preventing plate 81, which is fixedly disposed in the vacuum chamber, and a movable deposition-preventing plate 82, which moves freely in one direction, and also comprises: a metal block member 9, which is erected on an inner wall surface 13 of the vacuum chamber; and a cooling means 11 for cooling the block member. The apparatus is configured so that the top surface 91 of the block member approaches or contacts the movable deposition-preventing plate at the processing position of the movable deposition-preventing plate at which the prescribed vacuum processing is performed on the substrate on which a film is being formed.
The present invention provides a vacuum treatment device in which it is possible to control a substrate to be treated to a prescribed temperature even when heat enters the substrate to be treated from sources other than a hot plate during vacuum treatment. This vacuum treatment device SM is equipped with a vacuum chamber 1 that is capable of forming a vacuum environment, and a stage 4 that supports, inside the vacuum chamber, a substrate Sw to be treated, wherein the stage has a base 41 that is selectively cooled, a chuck plate 42 that is provided above the base and electrostatically attracts the substrate to be treated, and a hot plate 43 that is interposed between the base and the chuck plate, and the substrate to be treated, which is electrostatically attracted to the surface of the chuck plate, can be controlled to a prescribed temperature that is room temperature or higher. The vacuum treatment device further comprises, between the base and the hot plate, a heat insulating plate 44 that inhibits the transfer of heat from the hot plate to the base, and a high-emissivity layer 45 having a higher emissivity than the top surface of the base is provided between the base and the heat insulating plate.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
The present invention provides a vacuum treatment device which, when vacuum treatment is performed in a vacuum chamber while using a hot plate to control, to a prescribed temperature above room temperature, a substrate to be treated that is placed on a stage, is capable of limiting to the extent possible negative effects from the vacuum treatment such as causing film quality deterioration. A stage 4 has a base 41 and a hot plate 43 installed upon the base and capable of heating a substrate Sw to be treated, and additionally provided are a deposition preventing plate 8 and a metal platen ring 7 surrounding the hot plate with a prescribed gap therebetween. The surface portion of the platen ring facing the hot plate is formed from a low-emissivity layer 73, the emissivity thereof being reduced by applying surface treatment to the parent metal of the platen ring.
H01L 21/203 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
The present invention is a method for producing an OTS device in which a first conduction part, an OTS part that is formed of a chalcogenide, and a second conduction part are sequentially stacked on an insulating substrate. This production method comprises: a step A wherein the first conduction part is formed on the entire area of one surface of the substrate; a step B wherein the OTS part is formed on the entire area of the first conduction part; a step C wherein the second conduction part is formed on the entire area of the OTS part; a step D wherein a resist is formed so as to cover a part of the upper surface of the second conduction part; a step E wherein the region that is not covered by the resist is dry etched; and a step F wherein the resist is subjected to ashing. In the step E, all of the second conduction part, all of the OTS part and the upper part of the first conduction part are removed in the depth direction of the above-described region by a single etching.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
A cathode device (20) comprises: a rotating plate (26) to which a magnetic circuit (27) is secured; a rotation mechanism (21) that receives motive power from a motor (21M) and causes the rotating plate (26) to rotate about a rotating shaft (25); a linear-motion parallel link mechanism (22-24) provided with an end effector (24) that rotatably supports the rotating shaft (25), six links (23) the tip ends of which are connected to the end effector (24) and which radially extend from the end effector (24), and three linear motion mechanisms (22) that each receive the motive power of a linear motion actuator (22M) and cause the base ends of two adjacent links (23) to move along one direction; and a control unit (30) that controls changes in position of the rotating shaft (25) by means of a cooperative operation with each of the linear motion actuators (22M) and that controls the rotation of the rotating shaft (25) through operation of the motor (21M).
[Problem] To provide: a contact-type power supply device which has a simple structure but is capable of passing a steady electric current between cylindrical bodies over a prolonged period of time; and a contact unit which is disposed in a contact-type power supply device. [Solution] This contact-type power supply device is provided with a first cylindrical body, a second cylindrical body, an annular body, and a contact body. The second cylindrical body encloses the first cylindrical body so as to be disposed concentrically therewith, and is configured to be rotatable about the central axis of the first cylindrical body. The annular body encloses the first cylindrical body so as to be disposed concentrically therewith, is configured to be not in contact with the second cylindrical body, and has an end face that is a tapered sloping surface. The contact body is disposed so as to face the annular body in the axial direction of the first cylindrical body, is electrically connected to the second cylindrical body, rotates, together with the second body, about the aforementioned central axis around the first cylindrical body, has a contact surface that abuts the sloping surface, and slides on the annular body so as to accept the electric potential of the annular body.
Provided is a magnet unit for a magnetron sputtering device capable of, when forming a prescribed thin film on a substrate, achieving more uniform film thickness distribution over the entire surface thereof. With the sputtering surface-side of a target 3 being a lower side, the magnet unit 4 for the magnetron sputtering device is disposed on the upper side of the target. The magnet unit has a yoke 41 made of a magnetic material and disposed so as to face the target and multiple magnets 42 disposed on the lower surface of the yoke, causes a leakage magnetic field, in which a line passing a position where a vertical component of the magnetic field becomes zero is closed in an endless manner, to locally act on a space formed below the target at a position between the center and the periphery of the target, and is driven to rotate about the center of the target. A recessed groove 41a, which circumferentially extends along a virtual circumference about the center of the target and is recessed or penetrates downward from the upper surface of the yoke, is formed at a predetermined position on the yoke, and an auxiliary yoke 44 is disposed in the recessed groove in a detachable manner.
Provided is a sputtering machine capable of, when forming a thin film on a substrate, achieving more uniform film thickness distribution over the entire surface thereof. The sputtering machine SM is provided with: a vacuum chamber 1 in which a substrate W and a target 3 are disposed face-to-face; a plasma generation means for generating plasma inside the vacuum chamber; and a magnet unit 4 disposed above the target. The magnet unit has multiple magnets the polarities of which on the substrate side differ from each other, and a leakage magnetic field, in which a line passing a position where a vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on a space formed below the target at a position between the center and the periphery of the target. The magnet unit is divided, on a virtual line extending from the center to the periphery of the target, into multiple segments 40a, 40b each having multiple magnets 42a, 42b. There are further provided drive means 5, 6 for driving the segments to rotate about the center of the target and an angular velocity control means 72 for controlling the angular velocity of the segments within a range in which the endless state of the leakage magnetic field is maintained.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
Inventeur(s)
Kashima Yukio
Matsuura Eriko
Kokubo Mitsunori
Tashiro Takaharu
Hirayama Hideki
Maeda Noritoshi
Kamimura Ryuichiro
Osada Yamato
Furuta Kanji
Iwai Takeshi
Aoyama Yohei
Iwaisako Yasushi
Nagano Tsugumi
Takagi Hideki
Kurashima Yuuichi
Matsumae Takashi
Abrégé
effeffeff: effective refractive index of two-dimensional photonic crystal, and a: period of two-dimensional photonic crystal) satisfies 3≤m≤4, and the ratio of R/a (R is the radius of the vacancies) satisfies 0.30≤R/a≤0.40.
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/22 - Surfaces irrégulières ou rugueuses, p.ex. à l'interface entre les couches épitaxiales
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
H01L 33/36 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
This spattering device has a plate-shaped regulator that is provided between a target and a substrate, that has an opening corresponding to a magnetic circuit, and that covers a portion not corresponding to the magnetic circuit. The regulator covers at least half the area of the substrate. The outline of the opening is substantially fan-shaped. The opening is disposed so as to substantially match the magnetic circuit when viewed from the direction of the rotational axis of the target, and the rotational axis of the target and the rotational axis of the substrate are disposed substantially in parallel.
(002)(004)(100)(002)(101)(102)(110)(103)(112)(004)(004)) of the X-ray diffraction peaks corresponding to the (100) plane, (002) plane, (101) plane, (102) plane, (110) plane, (103) plane, (112) plane, and (004) plane of a hexagonal closely packed lattice structure along the sputtering surface is at least 0.85.
C22F 1/10 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du nickel ou du cobalt ou de leurs alliages
C22F 1/00 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid
92.
ALUMINUM ALLOY TARGET AND METHOD FOR PRODUCING SAME
[Problem] The purpose of the present invention is to provide: an aluminum alloy target which enables the formation of an aluminum alloy film having excellent bending resistance and heat resistance; and a method for producing an aluminum alloy target. [Solution] For the purpose of achieving the purpose, an aluminum alloy target according to one embodiment of the present invention comprises Al pure metal and at least one first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb and Ti which is contained in the Al pure metal. The content of the first additive element is 0.01 to 1.0 at.% inclusive. An aluminum alloy film produced using the aluminum alloy target has excellent bending resistance and also has excellent heat resistance. The aluminum alloy film can be etched.
H01L 21/203 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
[Problem] To provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor which is provided with said aluminum alloy film. [Solution] To solve the problem, an aluminum alloy film according to an embodiment of the present invention contains at least one first additive element selected from the group of Zr, Sc, Mo, Y, Nb, and Ti added to pure Al. The content of the first additive element is 0.01-1.0 atom%. As a result, this aluminum alloy film has excellent bending resistance and heat resistance. Furthermore, the aluminum alloy film is allowed to be etched.
C22F 1/04 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid de l'aluminium ou de ses alliages
C23C 14/14 - Matériau métallique, bore ou silicium
C23C 26/00 - Revêtements non prévus par les groupes
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/49 - Electrodes du type métal-isolant-semi-conducteur
This film-forming method involves disposing, on a reverse surface side of a target, a plurality of magnetic circuits configured so as to be able to move in a first direction parallel to the reverse surface of the target, and disposing a substrate on a front surface side of the target and performing film-forming by magnetron sputtering, wherein: each of the magnetic circuits is provided with an annular magnet and a central magnet that is disposed on the inner side of the annular magnet, the polarity of a surface opposing the reverse surface of the target being different from the polarity of the annular magnet; a magnetic field, where a perpendicular component of the magnetic field generated from the magnetic circuits relative to the front surface of the substrate is 0, is formed in an annular shape on the front surface side of the target and between the annular magnets and the central magnets; and in the first direction, the magnetic circuits swing with a first movement distance L1 and a second movement distance L2 different from the first movement distance L1, the proportion of L1 and L2 per unit time where the magnetic circuits are moving being controlled.
A sputtering apparatus according to an embodiment may comprise: a stage rotatable while supporting a substrate having a fine pattern; a target facing the substrate; and a blocking member including a blocking body arranged between the stage and the target, and a through hole which is formed in the blocking body and through which at least a portion of film-forming materials that are separated from the target and proceed to the substrate passes.
The film-forming device according to one embodiment of the present invention has a first transfer mechanism, a second transfer mechanism, and a film-forming part. The first transfer mechanism transfers an elongated base material. The second transfer mechanism transfers, at a film-forming position, a pair of tape-like masks that covers both widthwise ends of a film-forming surface of the base material. The film-forming part has a film deposition source disposed so as to face the film-forming position, and forms a thin film on the film-forming surface and the pair of tape-like masks.
The present invention can suppress the occurrence of an uneroded region at the outer periphery of a sputtering target during film deposition by magnetron sputtering. The present invention is a sputtering deposition device for depositing a film onto a single object for film formation in a vacuum by using a magnetron sputtering method. The present invention has: a magnet device 10 for generating a magnetron beam, which is disposed on the opposite side from a sputtering surface 7a of a single sputtering target 7 and which moves in a direction along the sputtering surface 7a of the sputtering target 7 at the time of discharge; an inner shield section 21 which is disposed around and in close proximity to the outer periphery of the sputtering target 7 and has a floating potential; and an outer shield section 22 which is disposed around the inner shield section 21, has a ground potential, and is made of an electroconductive material.
The present invention provides a technology that enables suppressing particle generation from a deposition-preventing member disposed in an electric discharge space at the time of vacuum processing. The present invention pertains to a deposition-preventing member 30 that prevents a substance generated during vacuum processing from adhering to the interior of a vacuum chamber and that is provided with a frame-like deposition-prevention body member 10 and a holding member 20 for holding the deposition-prevention body member 10. The deposition-prevention body member 10 has plate-like first to fourth components 1-4 that are disposed around a substrate, and the first to fourth components 1-4 are respectively provided with first to fourth grappling parts that are provided to a surface on the side opposite to a surface facing an electric discharge space inside the vacuum chamber so as to be mounted by grappling with first to fourth hooks provided to the holding member 20.
This vacuum processing apparatus for performing plasma treatment comprises: an electrode flange, which is connected to a high frequency power source in a chamber; a shower plate, which has a first surface facing the electrode flange and a second surface on the reverse side from the first surface, faces the electrode flange separated by a gap, and forms a cathode together with the electrode flange; a processing chamber, which faces the second surface of the shower plate and in which a substrate to be processed is disposed; and a support shaft, which is connected to the first surface of the shower plate and supports the shower plate. In the shower plate, multiple gas flow channels, which connect the space between the electrode flange and the first surface to the processing chamber and have a specified conductance, are formed. Shaft gas flow channels extending in the axial direction of the support shaft are provided for preventing variations in the conductance in the in-plane direction of the shower plate, at the portion where the support shaft is connected to the shower plate.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p.ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
The ionization vacuum gauge according to one embodiment of the present invention is provided with a gauge head and a control unit. The control unit has a drive circuit, a grid power source, an ionic current detection circuit, and a potential restriction circuit. The drive circuit includes a drive power source for driving an electron emission source, and controls the drive power source such that an emission current flowing between the electron emission source and the grid becomes constant. The grid power source maintains a grid at a prescribed grid potential. The ionic current detection circuit detects an ionic current flowing into a collector. The potential restriction circuit is connected between the drive circuit and the grid power source, and maintains the potential of the electron emission source within a prescribed range from a first potential that is higher than the potential of the collector to a second potential that is lower than the grid potential.
H01J 41/04 - Tubes à décharge et moyens structurellement associés pour la mesure de la pression de gaz avec ionisation au moyen de cathodes thermo-ioniques
G01L 21/32 - Indicateurs de vide en faisant usage des effets d'ionisation en utilisant des tubes électriques à décharge à cathodes thermioniques
brevets
