A vacuum processing apparatus of this invention having a stage on which is disposed the to-be-processed substrate further has a lifting/rotation mechanism capable of lifting the to-be-processed substrate lying on the stage off from an upper surface of the stage to a predetermined height position so that, at this lifted position, the to-be-processed substrate is capable of rotation about a substrate center by a predetermined rotational angle. The lifting/rotation mechanism has: a driving rod built into the stage so as to be moveable up and down and also be rotatable; and a substrate supporting body having a base end plate part capable of contacting a central region, including the substrate center, of the to-be-processed substrate. The substrate supporting body further has at least two arm plate parts elongated from the base end plate part outward thereof.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p.ex. mandrins, pièces de serrage, pinces
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
2.
SPUTTERING TARGET FOR OXIDE SEMICONDUCTOR THIN FILM FORMATION, METHOD FOR PRODUCING SPUTTERING TARGET FOR OXIDE SEMICONDUCTOR THIN FILM FORMATION, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
C04B 35/01 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes
C04B 35/453 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de zinc, d'étain ou de bismuth ou de leurs solutions solides avec d'autres oxydes, p.ex. zincates, stannates ou bismuthates
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
SPUTTERING TARGET FOR FORMATION OF OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING SPUTTERING TARGET FOR FORMATION OF OXIDE SEMICONDUCTOR THIN FILM, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
XYVwZZ, X is within the range of 0.4 to 0.8, Y is within the range of 0 to 0.1 and Z is within the range of 0.2 to 0.6, while satisfying X + Y + Z = 1, V/(V + W + X + Y + Z) is 0.01 to 0.22 and W/(V + W + X + Y + Z) is 0.01 to 0.06.
C04B 35/01 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes
C04B 35/453 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de zinc, d'étain ou de bismuth ou de leurs solutions solides avec d'autres oxydes, p.ex. zincates, stannates ou bismuthates
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
The specific embodiments of the present invention provide: dried plasma that is characterized by having excellent particle uniformity, retaining the activity of the various blood clotting factors, and having a D50 of 200–400 μm on a volume-based particle size distribution obtained by laser diffraction/scattering particle size distribution measurement; and a production method, etc. for the dried plasma.
B01J 2/04 - Procédés ou dispositifs pour la granulation de substances, en général; Traitement de matériaux particulaires leur permettant de s'écouler librement, en général, p.ex. en les rendant hydrophobes par division du produit liquide en gouttelettes, p.ex. par pulvérisation, et solidification des gouttelettes en milieu gazeux
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
F26B 17/10 - Machines ou appareils à mouvement progressif pour le séchage d'un matériau en vrac, à l'état plastique ou sous forme fluidisée, p.ex. granulés, fibres brutes le mouvement étant réalisé par des courants de fluides, p.ex. provenant d'une tuyère
5.
VACUUM TREATMENT APPARATUS AND VACUUM TREATMENT METHOD
In a present vacuum treatment apparatus, a controller controls an auxiliary roller, a thermometer, a power source, and a temperature control mechanism, in which the controller detects a temperature of a base material wound and conveyed by a main roller, starts film deposition to form a film deposition material on the base material when the temperature of the base material is in a film deposition temperature range, adjusts, when the temperature of the base material is out of a threshold range after starting film deposition on the base material, the temperature of the main roller so that the temperature of the base material falls within the threshold range and adjusts an adhesion force between the main roller and the base material, and continues the film deposition of the film deposition material on the base material with the temperature of the base material in the film deposition temperature range.
B65H 18/20 - Mécanismes d'enroulage des bandes dans lesquels l'énergie est appliquée à la bobine, p.ex. pour faire avancer la bande d'un mouvement continu la bobine étant portée sur deux rouleaux parallèles dont l'un au moins est entraîné
B65H 23/038 - Commande du positionnement transversal de la bande par des rouleaux
6.
SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING SYSTEM, AND METHOD FOR PROCESSING SUBSTRATE
A substrate processing device reduces a surface of a substrate. The surface includes a metal layer. The substrate processing device includes a chamber body, a hot plate, a plasma supply unit, and a controller. The hot plate is accommodated in the chamber body and configured to set the substrate. The plasma supply unit is configured to supply plasma of a hydrogen gas to the chamber body. The controller is configured to execute a degassing process and a reducing process. In the degassing process, the controller drives the hot plate to remove an adsorbate from the surface before driving the plasma supply unit. In the reducing process, the controller drives the plasma supply unit after driving the hot plate to supply the plasma to the surface that has undergone the degassing process.
An information processing device of the present invention includes a first acquisition unit, a second acquisition unit, and a machine learning processing unit. The first acquisition unit acquires total event status information. The second acquisition unit acquires time-series detection result information. The machine learning processing unit performs one or both of learning processing and determination processing. In the learning processing, a learning model is generated by performing machine learning with the time-series detection result information acquired by the second acquisition unit as an input for each piece of the total event status information acquired by the first acquisition unit. In the determination processing, a determination is performed on the generated learning model by inputting the time-series detection result information acquired by the second acquisition unit for each piece of the total event status information acquired by the first acquisition unit.
A vacuum treatment apparatus including: a first wind-off roller paying out a first base material; a first wind roller winding the first base material; a main roller having an outer circumferential surface in contact with a non-film deposition surface, and winding and conveying the first base material, at least a part of the outer circumferential surface, which is uncovered with the first base material, being coated with an insulating material; a deposition source facing the outer circumferential surface of the main roller; a second wind-off roller paying out a second base material that is wound and conveyed by the main roller and covers a part of a film deposition surface of the first base material on the outer circumferential surface of the main roller; a second wind roller winding the second base material; and a power source applying a bias potential to the main roller.
B05D 1/28 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces par transfert de liquides ou d'autres matériaux fluides, à partir de la surface d'éléments porteurs, p.ex. de pinceaux, tampons, rouleaux
9.
METHOD OF DEPOSITING SILICON NITRIDE FILM, APPARATUS FOR DEPOSITING FILM, AND SILICON NITRIDE FILM
In a method in which inside a vacuum chamber, a silicon target and a to-be-deposited object are disposed in a positional relationship to face each other; a sputtering gas, containing therein nitrogen gas, is introduced into the vacuum chamber which is in a vacuum atmosphere; a negative potential is applied to the silicon target such that a silicon nitride film having a tensile stress is deposited in a reactive sputtering on a surface of the to-be-deposited object that is placed in an electrically floated state. The method includes steps: in which the to-be-deposited object is made to a state in which a bias potential is free from being applied thereto; and at least one of a flow ratio of the nitrogen gas to the sputtering gas, and the potential to be applied to the silicon target is controlled such that the surface of the silicon target can be maintained in a transition mode.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01J 37/34 - Tubes à décharge en atmosphère gazeuse fonctionnant par pulvérisation cathodique
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
C23C 14/54 - Commande ou régulation du processus de revêtement
[Object] To improve step coverage of a coating film
[Object] To improve step coverage of a coating film
[Solving Means] A deposition apparatus that includes a first electrode, a second electrode, a first power supply source, a second power supply source, and a phase adjuster is used. The first power supply source includes a first high-frequency power source and a first matching circuit, the first high-frequency power source outputting first high-frequency power, the first matching circuit being connected between the first high-frequency power source and the first electrode. The second power supply source includes a second matching circuit that outputs second high-frequency power, the second high-frequency power having the same period as the first high-frequency power and being lower than the first high-frequency power. A second high-frequency power source is caused to output the second high-frequency power and the phase adjuster is caused to operate to provide a phase difference θ between a phase of the first high-frequency power and a phase of the second high-frequency power. A voltage value Vpp of the second high-frequency power and a capacitance value C1 of a first variable capacitor that correspond to the phase difference θ in a state where output impedance of the second high-frequency power source and load-side impedance connected to the second high-frequency power source match are detected. The voltage value Vpp and the capacitance value C1 are selected in combination in a predetermined range of the phase difference θ.
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Japon)
ULVAC, INC. (Japon)
Inventeur(s)
Miyata, Noriyuki
Asanuma, Shutaro
Sumita, Kyoko
Miyaguchi, Yuusuke
Saito, Kazuya
Jinbo, Takehito
Horita, Kazumasa
Masuda, Takeshi
Abrégé
[PROBLEM] An object of the present invention is to provide a nonvolatile memory device having an excellent information retention characteristic, exhibiting high performance, and achieving practical mass-production, and a manufacturing method therefor.
[PROBLEM] An object of the present invention is to provide a nonvolatile memory device having an excellent information retention characteristic, exhibiting high performance, and achieving practical mass-production, and a manufacturing method therefor.
[SOLUTION] A nonvolatile memory device 1 has a laminated structure part including a plurality of Al2O3 layers 4 and a plurality of SiO2 layers 6 formed as two types of insulating layers formed with different compositions and disposed alternately, and an O-M1-O layer 5 of a 0.5 molecular layer to a 2.0 molecular layer, formed by a chemical bond between a metal element M1 and oxygen, and disposed on each joining interface between the insulating layers, the metal element M1 being an element other than elements constituting the insulating layers, and the nonvolatile memory device stores information by modulating an interface dipole induced in the vicinity of the O-M1-O layer 5 by external electrical stimulation.
H10B 43/35 - Dispositifs EEPROM avec des isolants de grille à piégeage de charge caractérisés par la région noyau de mémoire avec transistors de sélection de cellules, p.ex. NON-ET
H10B 43/23 - Dispositifs EEPROM avec des isolants de grille à piégeage de charge caractérisés par les agencements tridimensionnels, p ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p.ex. avec des canaux inclinés
H10B 41/23 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par les agencements tridimensionnels, p ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p.ex. avec des canaux inclinés
H10B 41/35 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la région noyau de mémoire avec un transistor de sélection de cellules, p.ex. NON-ET
The present invention provides a tungsten target and a method for manufacturing the same that suppresses the occurrence of particle-causing pores, controlling the size and distribution thereof to high precision. The tungsten target is formed from sintered tungsten powders, wherein, in a 0.15 mm2observation area having a relative density of 99% or more, there are no more than 20 pores that are 0.01 μm2or more and less than 0.2 μm2in size, no more than five pores that are 0.2 μm2or more and less than 1.8 μm2in size, and no more than one pore that is 1.8 μm2 or more in size.
A plasma processing apparatus according to the invention includes a chamber, an inner electrode, an outer electrode, a plasma generating power source, and a gas introduction part. The plasma generating power source applies alternating-current power to the outer electrode. The outer electrode includes a first electrode, a second electrode, and a third electrode. The plasma generating power source includes a first high-frequency power source, a second high-frequency power source, and a power splitter. The first high-frequency power source applies alternating-current power having a first frequency λ1 to the first electrode and the second electrode. The second high-frequency power source applies alternating-current power having a second frequency λ2 to the third electrode. A relationship of λ1>λ2 is satisfied. The power splitter is configured to split the alternating-current power into the first electrode and the second electrode with a predetermined split ratio.
The present invention relates to a method for forming a tungsten (W) film in a semiconductor device, by using a physical vapor deposition (PVD) sputtering method on a semiconductor substrate, the tungsten film forming method comprising: a) a first deposition step of depositing a tungsten film on the semiconductor substrate by using magnetron sputtering with a power density of less than 0.5 W/㎠ ; b) a step of modifying the surface of the deposited tungsten by performing RF bias processing under an inert gas atmosphere; and c) a second deposition step of additionally depositing a tungsten film on the deposited tungsten film by using magnetron sputtering of a power density of 0.5 W/㎠ or more.
There is provided an evaporation source adapted for use in a vapor deposition apparatus in which by heating, in an induction heating method, a crucible filled with a vapor deposition material, the entire crucible including a cap body attains a top-heat state. An evaporation source is provided with: a crucible filled with the vapor deposition material; a cap body to close an upper surface opening of the crucible; and an induction heating coil disposed around the crucible and the cap body. Further, the cap body is provided with a discharge part which allows the passage of the vapor deposition material evaporated or sublimated by heating. The cap body is provided on an external surface thereof with projections each having a corner part.
According to the present invention, particles are inhibited from infiltrating a vacuum processing device. To achieve the abovementioned purpose, a vacuum processing device according to one mode of the present invention comprises a vacuum vessel, a charged particle generation source, an exhaust mechanism, and a particle removal mechanism. Charged particles are generated inside the charged particle generation source. The exhaust mechanism exhausts gas that is inside the vacuum vessel. The particle removal mechanism includes an intermediate tank that is disposed between the vacuum vessel and the charged particle generation source and that connects the vacuum vessel and the charged particle generation source, and the particles generated by the charged particle generation source are discharged using a gas stream to outside the intermediate tank in front of the vacuum vessel.
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériau; Moyens de réglage de diaphragmes ou de lentilles associées au support
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p.ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
C23C 14/00 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
17.
PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
A method for processing a subject with plasma includes repeatedly outputting first pulses from a pulse generator to a first high-frequency power supply, intermittently outputting first high-frequency power from the first high-frequency power supply to a first electrode based on the first pulses to generate the plasma, detecting start of plasma generation caused by a present first pulse with a detector, calculating a delay period, being from rise of the present first pulse until the detector detects start of plasma generation, repeatedly outputting second pulses from the pulse generator to a second high-frequency power supply based on time at which the delay period has elapsed from rise of a first pulse output after the delay period is calculated, and outputting second high-frequency power from the second high-frequency power supply to a second electrode based on the second pulses to draw ions from the plasma to the subject.
A vapor deposition source for a vacuum vapor deposition apparatus according to the present invention disposed in a vacuum chamber to evaporate a solid vapor deposition material to be vapor-deposited on an object to be subjected to vapor deposition includes: a crucible configured to accommodate the vapor deposition material therein and having a discharge port through which the evaporated vapor deposition material is discharged toward the object to be subjected to vapor deposition; and a heating means configured to heat the vapor deposition material in the crucible. In the crucible, an evaporation facilitator is provided, a partial portion of the evaporation facilitator being immersed in the vapor deposition material liquefied by heating, with a gap between the remaining portion of the evaporation facilitator and an inner surface of the crucible.
C04B 35/01 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
A display device of the present invention is provided with a display control unit which executes a display control process for controlling the operation of a prescribed display destination and for displaying multiple N-dimensional graphs on the display destination. In the N-dimensional graphs, predetermined multiple types of explanatory variables are each defined as a display candidate explanatory variable, and predetermined multiple types of objective variables are each defined as a display candidate objective variable, and each of the graphs shows a relationship between a Q-1 type (Q is an integer of 2 or more) explanatory variable among the display candidate explanatory variables and one type objective variable among the display candidate objective variables. The multiple N-dimensional graphs include a first graph and a second graph that have a common explanatory variable and different objective variables. The display control process includes a process which involves, when a prescribed condition is satisfied regarding acquisition of fixed-value change information including auxiliary explanatory variable information for designating one or more of auxiliary explanatory variables as values to be changed and information indicating current variable values, updating the first graph and the second graph to be displayed on the display destination to changed graphs in which the values of the auxiliary explanatory variables indicated by the auxiliary explanatory variable information have been changed to the current variable values indicated by the fixed-value change information.
A cathode unit includes first and second magnet units that are driven to rotate around an axis on a side opposed to a sputtering surface of a target. The first magnet unit is configured to cause a first leakage magnetic field to act on a space in front of the sputtering surface including a target center inward. The second magnet unit is configured to cause a second leakage magnetic field to act locally in the space in front of the sputtered surface located between the target center and the outer edge of the target and to enable self-holding discharge under low pressure of plasma confined by the second leakage magnetic field.
Provided is a silicon nitride film forming method with which a silicon nitride film having a relatively strong tensile stress can be formed by reactive sputtering. In this silicone nitride film forming method, a silicon target 3 and a film-forming object Sw are disposed opposing each other within a vacuum chamber 1, a sputtering gas containing a nitrogen gas is introduced into the vacuum chamber under a vacuum atmosphere, and a negative potential is applied to the silicon target to form a silicon nitride film having a tensile stress by reactive sputtering on the surface of the film-forming object which is disposed in an electrically floating state, wherein the method includes a step in which the film-forming object is placed in a state in which a bias potential is not being applied, and β-type silicon nitride is deposited on the surface of the film-forming object by controlling the flow amount ratio of the nitrogen gas relative to the sputtering gas and/or the potential to be applied to the silicon target so that the surface of the silicon target is maintained in a transition mode between a metal mode and a compound mode.
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
H01L 21/318 - Couches inorganiques composées de nitrures
Provided is a vacuum processing device that holds a stage configured so as to be able to offset the phase of a substrate to be treated without causing positional deviation of the substrate. A vacuum processing device SM, according to the present invention, which comprises a stage 4 on which a substrate Sw to be processed is installed, is characterized by further comprising a lifting/lowering rotation mechanism Rm that lifts the substrate to be processed on the stage to a prescribed height position from the stage top surface and can rotate the substrate to be processed at this lifted position every prescribed rotation angle about the substrate center, the lifting/lowering rotation mechanism including: a drive rod 5 that is incorporated into the stage and can freely move up/down and freely rotate; and a substrate support body 6 including a proximal end plate part 61 that can contact a center region of the substrate to be processed including the substrate center, and at least two arm plate parts 62 that extend outward from the proximal end plate part and can contact a portion of the substrate to be processed along the radial direction, the substrate support body normally being immersed within the stage, and the proximal end plate part and the arm plate parts being lifted up by upward movement of the drive rod to support the substrate to be processed.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
24.
VACUUM FREEZE-DRYING METHOD, INJECTION NOZZLE FOR A VACUUM FREEZE-DRYING APPARATUS, AND VACUUM FREEZE-DRYING APPARATUS
[Object] To freeze droplets of a raw material liquid in a shorter drop distance while maintaining a cooling velocity, which is a super high speed, without deteriorating a solute or dispersoid.
[Object] To freeze droplets of a raw material liquid in a shorter drop distance while maintaining a cooling velocity, which is a super high speed, without deteriorating a solute or dispersoid.
[Solving Means] A vacuum freeze-drying method according to an embodiment of the present invention is a vacuum freeze-drying method that includes steps of injecting a raw material liquid from an injection nozzle inside a vacuum chamber, generating frozen particles by self-freezing of the raw material liquid, and drying the generated frozen particles to thereby produce a dry powder, including: injecting the raw material liquid from the injection nozzle in a state in which the vacuum chamber is maintained at water vapor partial pressure corresponding to a self-freezing temperature of the raw material liquid, such that an injection initial velocity of the raw material liquid from the injection nozzle is 6 m/s or more and 33 m/s or less; and adjusting, when the maximum diameter of the generated frozen particle exceeds a predetermined value or droplets of the raw material liquid are unfrozen, an injection flow rate of the raw material liquid from the injection nozzle or properties of the injection nozzle such that frozen particles having a maximum diameter equal to or smaller than the predetermined value are generated.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
This sputtering device is provided with a cathode unit for emitting sputter particles toward a surface to be treated of a substrate on which a film is to be formed. The cathode unit has a target, a magnet unit, a magnet scanning unit, and an auxiliary magnet. The auxiliary magnet causes magnetic field lines formed by a magnet positioned at a first oscillation end to tilt toward a second oscillation end along the magnet positioned at the first oscillation end.
[Problem] To provide a vacuum pump and a control method therefor with which it is possible to improve vacuum evacuation performance while protecting a motor from overheating. [Solution] A vacuum pump according to one embodiment of the present invention comprises a positive-displacement pump body, a motor, and a control unit. The pump body has a pump rotor. The motor rotates the pump rotor. When a load torque is equal to or lower than a first predetermined torque, the control unit executes a first control mode in which the motor is driven at a predetermined rotation speed or lower. When the load torque exceeds the first predetermined torque, the control unit executes a second control mode in which the motor is driven at the predetermined rotation speed or lower using a second predetermined torque or lower, the second predetermined torque being higher than the first predetermined torque, with a first predetermined power set as the upper limit of motor output.
A cathode unit for a magnetron sputtering apparatus includes a backing plate joined to an upper side opposed to a sputtering surface of a target set in a posture facing an inside of a vacuum chamber and a magnet unit disposed above the backing plate at an interval, a refrigerant passage through which a refrigerant can flow being formed in the backing plate, in which a surface pressure applying unit is provided, the surface pressure applying unit applying, toward an upper outer surface of the backing plate from above the backing plate, a surface pressure equivalent to pressure applied to an upper inner surface of the backing plate when the refrigerant is circulated.
Provided is a film forming method by which a metal film having a high melting point can be formed in a state where a stress difference is as small as possible and which is suitable in the case of using a cylindrical target. A film forming method according to the present invention, which forms a metal film having a high melting point on an opposite surface to each target 5 of a substrate Sw disposed in a vacuum treatment room 1a, comprises: a first step for taking, as a first target group 50a, starting point targets 5a, 5b at which both outer edge parts of the substrate face each other and targets 5c, 5d that are positioned outward in a target aligned direction from the starting point targets, for taking, as a second target group 50b, targets 5e–5h that are positioned inward in the target aligned direction from the starting point targets, and for supplying power to each of the targets of the second target group by means of a sputter power supply 7 and forming a film when the metal film having a high melting point starts to be formed on the substrate; and a second step for supplying power to each of the targets of the first target group by means of the sputter power supply and forming a film simultaneously with or prior to the stopping of supplying power to each target of the second target group.
H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
H01L 21/365 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c. à d. un dépôt chimique
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/15 - Structures avec une variation de potentiel périodique ou quasi périodique, p.ex. puits quantiques multiples, superréseaux
H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
A freeze-drying device includes a controller configured to control depressurization of containers filled with a liquid including a raw material and a medium to freeze the liquid from a liquid surface. The freeze-drying device also includes a gas capture pump configured to exhaust a freeze-drying chamber accommodating the containers, and a positive-displacement pump configured to discharge gas from a space accommodating the gas capture pump. The controller executes an exhaust mitigation process that performs the depressurization at an exhaust capability that is less than a rated exhaust capability of the freeze-drying device. The controller uses a partial pressure value of the medium to determine when the exhaust mitigation process ends. The controller maintains an exhaust speed of the gas capture pump and decreases an exhaust speed of the positive-displacement pump in the exhaust mitigation process.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
Provided is a freeze-drying device that can evenly measure water quality flow rate serving as a management indicator for the drying state of an object to be dried. This freeze-drying device (FM) comprises: a freeze-drying chamber (1a) in which is disposed an object (Ds) to be dried having water as a solvent; and a collection chamber (2a) that communicates with the freeze-drying chamber and in which a cold trap (4) is provided for condensing and collecting water vapor generated from the object to be dried. The freeze-drying device further comprises a plurality of measurement means (Pg11 to Pg23) allowing measurement of state quantities of at least one among the object to be dried, the inside of the freeze-drying chamber, and the inside of the collection chamber, associated with sublimation of water from the object to be dried, and a measurement means (5) for measuring the water quality flow rate on the basis of the state quantities measured by the respective measurement means. The measurement means has a plurality of measurement models corresponding to the measurement of the water quality flow rate and, while the state quantities are being measured by the respective measurement means, the measurement model that is dominant at the time of measurement and with which it is possible to measure the water quality flow rate is selected from a set in which measurement values measured by the respective measurement means and the respective measurement models corresponding thereto are combined. The water quality flow rate is obtained from the selected measurement values and the measurement model corresponding thereto.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
[Problem] To improve step coverage of a coating film. [Solution] To use a film formation device equipped with a first electrode, a second electrode, a first power supply source, a second power supply source, and a phase adjuster. The first power supply source includes a first high-frequency power source that outputs first high-frequency power, and a first matching circuit that is connected between the first high-frequency power source and the first electrode. The second power supply source includes a second matching circuit that outputs a second high-frequency power lower than a first high-frequency power with the same period as the first high-frequency power. The second high-frequency power is caused to be output from the second high-frequency power source, and the phase adjuster is operated to provide a phase difference θ to a phase of the first high-frequency power and a phase of the second high-frequency power. A voltage value Vpp of the second high-frequency power and a capacitance value C1 of a first variable capacitor are detected that correspond to the phase difference θ in a state where the output impedance of the second high-frequency power source and the load-side impedance connected to the second high-frequency power source are matched to each other. The voltage value Vpp and the capacitance value C1 are selected in combination in a prescribed range of the phase difference θ.
Provided is a substrate holding device capable of smoothly discharging assist gas without deteriorating a function of improving sealing between an annular wall and a process-target substrate. This substrate holding device SH comprises: a susceptor 6 in which a first annular wall 61 in contact with the outer circumferential part of a process-target substrate Sw and a second annular wall 62 disposed inward of the first annular wall are protruded; a surface pressure applying means 51 for applying surface pressure, toward the first and second annular walls, to the process-target substrate in contact with the first and second annular walls; and gas introduction means 71, 72, 71a, 72a for introducing a predetermined gas to an outward space 63 that is in the susceptor and that is partitioned by the process-target substrate and the first and second annular walls, and to an inward space 64 that is in the susceptor and that is partitioned by the process-target substrate and the second annular wall, to cause the respective outward and inward spaces to be in a gas atmosphere. At the second annular wall, a connecting path 62a is formed so as to connect the outward space and the inward space with each other, and has a conductance value at which the gas atmosphere can be separated between the outward space and the inward space.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
Provided is a vacuum processing device capable of removing introduced particles to the greatest extent possible while maintaining a vacuum atmosphere. The device has a vacuum chamber 1, 2 in which a processing unit 4 is installed. A vacuum pump 15 is connected to the vacuum chamber, and a stage 3 is provided within the vacuum chamber. An oscillation means to oscillate the stage between a first orientation and a second orientation is provided, the first orientation being the orientation of the stage when a substrate Sw faces the processing unit and is processed, and the second orientation being the orientation of the stage other than during processing. A spraying means 5 for spraying an inert gas toward the stage is provided in the vacuum chamber. The spraying means is configured to allow the flow rate to be switched between a first flow rate that enables particles adhering to at least one of the stage and the substrate to be blown away while the interior of the vacuum chamber is a vacuum atmosphere of prescribed pressure and a second flow rate that enables particles diffused within the vacuum chamber by being blown away to be transferred to the vacuum pump.
C23C 14/00 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
35.
METHOD FOR CONTROLLING RESISTIVITY AND CRYSTALLINITY OF LOW-RESISTANCE MATERIAL THROUGH PVD
22 wafer by using low-temperature magnetron sputtering at a pressure of 1-40 Pa; b) modifying, after formation of the barrier layer, the surface of the barrier layer by applying RF bias in an Ar gas atmosphere without applying DC power; and c) layering a low-resistance material on the barrier layer by using magnetron sputtering, wherein the low-resistance material is at least one selected from the group consisting of tungsten (W), ruthenium (Ru), molybdenum (Mo), cobalt (Co) and rhodium (Rh).
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
C23C 14/16 - Matériau métallique, bore ou silicium sur des substrats métalliques, en bore ou en silicium
C23C 14/35 - Pulvérisation cathodique par application d'un champ magnétique, p.ex. pulvérisation au moyen d'un magnétron
36.
SPUTTERING DEVICE, CONTROL METHOD OF SPUTTERING DEVICE, AND CONTROL DEVICE FOR SPUTTERING DEVICE
A sputtering device according to an embodiment of the present invention is equipped with: one or more targets disposed to face a substrate and made from a film deposition material; one or more magnet units disposed on the rear side of the targets; a control device having an optimum solution calculation unit for calculating an optimum solution for a setting condition pertaining to at least one of the magnet units on the basis of input information which includes at least a setting condition, which includes at least one among the position of each magnet unit, a movement pattern of each magnet unit, and inflow currents to constituent electromagnets of each magnet unit or an inflow current fluctuation pattern, and a measurement value of the film quality of the film deposition material deposited on the substrate by the sputtering device; and an adjustment unit capable of individually adjusting the setting conditions of the magnet units on the basis of the optimum solution.
A plasma processing device includes an inductively coupled plasma antenna including an input end and an output end, a series circuit including an additional inductor and a variable capacitor connected in series, and a controller that varies a capacitance of the variable capacitor. The input terminal is connected via an antenna matching device to an antenna power supply. The output terminal is connected to the additional inductor. The additional inductor is connected via the variable capacitor to ground.
A high-frequency power circuit includes a first antenna circuit and a second antenna circuit that are connected in parallel to a matching box connected to a high-frequency power supply. The first antenna circuit include a first antenna, a first distribution capacitor, and a first variable capacitor. The second antenna circuit includes a second antenna, a second distribution capacitor, and a second variable capacitor. A controller sets a capacitance of the first variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the first antenna and the first variable capacitor during plasma production to reduce this phase difference and sets a capacitance of the second variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the second antenna and the second variable capacitor during plasma production to reduce this phase difference.
1122 that, on the side of a target 5 opposite to a sputtering surface 51, are respectively driven about an axis C1. The first magnet unit is configured such that a first stray magnetic field Mf1 is caused to act on a front space of the sputtering surface which includes a target center Tc therein. The second magnet unit causes a second stray magnetic field Mf2 to locally act on the front space of the sputtering surface located between the target center and an outer edge section of the target, and is configured so as to enable low-pressure self-maintained discharge of plasma contained in the second stray magnetic field.
An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.
Embodiments of the present invention are directed to forming a ternary compound using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor includes a first metal and a first ligand. The second precursor includes a second metal and a second ligand. The second ligand is selected based on the first ligand to target a second metal uptake. A substrate is exposed to the first precursor during a first pulse of an ALD cycle and the substrate is exposed to the second precursor during a second pulse of the ALD cycle, the second pulse occurring after the first pulse. The substrate is exposed to a third precursor (e.g., an oxidant) during a third pulse of the ALD cycle. The ternary compound can include a ternary oxide film.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
42.
EVAPORATION SOURCE FOR VACUUM EVAPORATION APPARATUS
The evaporation source for use in the vacuum evaporation apparatus in vacuum evaporation of a film formation object inside a vacuum chamber has: a main cylindrical body having a crucible part to be filled with an evaporation material Em; a secondary cylindrical body protruded from such a portion of the main cylindrical body as is positioned above the evaporation material; and a heater capable of heating the evaporation material that is filled in the crucible part. The secondary cylindrical body is detachably mountable on the main cylindrical body while shifting a phase of the discharge opening. A lid body is disposed in a manner to open or close an upper-surface opening of the crucible part. In a state in which the upper-surface opening of the crucible part is blocked by the lid body in a vacuum atmosphere, the evaporation material in the crucible part is heated by the heater.
[Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same.
[Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same.
[Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention includes: an oxide sintered body including indium, tin, and germanium, in which an atom ratio of germanium with respect to a total of indium, tin, and germanium is 0.07 or more and 0.40 or less, and an atom ratio of tin with respect to the total of indium, tin, and germanium is 0.04 or more and 0.60 or less. As a result, it is possible to achieve transistor characteristics of having mobility of 10 cm2/Vs or more.
C04B 35/457 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxydes de zinc, d'étain ou de bismuth ou de leurs solutions solides avec d'autres oxydes, p.ex. zincates, stannates ou bismuthates à base d'oxydes d'étain ou de stannates
An ion gun of the invention includes: an anode; a magnetic pole that has an inner surface facing the anode, a slit provided at a position corresponding to the anode, and an inner inclined surface that extends from an end of the inner surface to the slit and that forms a part of the slit; and a cover that covers at least the inner surface and the inner inclined surface, is formed of an electroconductive and non-magnetic material, and is detachable from the magnetic pole.
A vacuum processing apparatus including: a plurality of transport chambers arranged in order along a first direction; a plurality of process chambers connected to the transport chambers along a second direction that is perpendicular to the first direction; and a position conversion chamber connected to a first transport chamber among the transport chambers. The transport chambers include a rotational movement stage that rotates about a rotation axis that is perpendicular to the first direction and the second direction, and moves along a plane formed by the first direction and the second direction.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
46.
VAPOR DEPOSITION SOURCE FOR VACUUM DEPOSITION DEVICES
11 comprises: a crucible 4 in which a vapor deposition material Vm is filled; a cap body 5 which blocks an upper surface opening 4a of the crucible; and an induction heating coil 6 which is disposed around the crucible and the cap body, wherein a discharge portion 51a that allows the passage of vapor deposition material which has been evaporated or sublimated by heating is provided to the cap body, and a ridge 52b that has corners is provided to an outer surface of the cap body.
A control unit (21) performs: a gas discharge mitigation treatment, in which a transient response state of a pressure is switched to a low-speed gas discharge treatment to discharge a gas dissolved in a liquid material (M) from the liquid material (M), and in which the temperature of a liquid surface in the liquid material (M) becomes the lowest; a gas discharge enhancement treatment, in which subsequently the low-speed gas discharge treatment is switched to a high-speed gas discharge treatment to adjust the pressure in a container (C) to a pressure of a gas-phase region in a medium and the liquid surface is further cooled to generate ice nuclei in the liquid surface; and a boiling inhibition treatment, in which subsequently the pressure in the container is adjusted to a triple point of the medium or higher to inhibit the generation and growth of bubble nuclei.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
A freeze-drying device includes a controller configured to control depressurization of containers filled with a liquid including a raw material and a medium to freeze the liquid from a liquid surface. The freeze-drying device also includes a gas capture pump configured to exhaust a freeze-drying chamber accommodating the containers, and a positive-displacement pump configured to discharge gas from a space accommodating the gas capture pump. The controller executes an exhaust mitigation process that performs the depressurization at an exhaust capability that is less than a rated exhaust capability of the freeze-drying device. The controller uses a partial pressure value of the medium to determine when the exhaust mitigation process ends. The controller maintains an exhaust speed of the gas capture pump and decreases an exhaust speed of the positive-displacement pump in the exhaust mitigation process.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
49.
TEMPERATURE MEASUREMENT METHOD, TEMPERATURE MEASUREMENT DEVICE, AND THIN FILM FORMATION METHOD
In the temperature measurement method of this invention, a temperature measurement substrate, on which a phase-change film a physical quantity of which changes due to a change in the arrival temperature is laminated, is subjected to a heat treatment, after the temperature measurement substrate has been subjected to heat treatment, the physical quantity of the phase-change film is measured to obtain a measured physical quantity, and the temperature and temperature distribution of the temperature measurement substrate in the heat treatment of the temperature measurement substrate are obtained on the basis of the measured physical quantity and a predetermined relationship between the physical quantity and the temperature.
B21C 51/00 - Dispositifs de mesure, de calibrage, d'indication, de comptage ou de marquage, spécialement conçus pour être utilisés dans la production ou la manipulation des matériaux concernés par les sous-classes
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
G01K 7/16 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs
G01K 11/12 - Mesure de la température basée sur les variations physiques ou chimiques, n'entrant pas dans les groupes , , ou utilisant le changement de couleur, de translucidité ou de réflectance
50.
CATHODE UNIT FOR MAGNETRON SPUTTERING DEVICE, AND MAGNETRON SPUTTERING DEVICE
14144 disposed inside a vacuum chamber 1 are equipped with a linear center magnet 52 and a peripheral magnet 53 that surrounds the periphery of the center magnet and that has linear parts 53a, 53b and a bridging part 53c bridging between the two free ends of the two linear parts, in such a manner that the polarities on the target side are changed. There is generated a magnetic field Mf leaking from the sputtering surface so that a line passing through positions at which the vertical component of the magnetic field is zero extends in the longitudinal direction of the center magnet and closes in a racetrack shape. In a state in which the attitude of the peripheral magnet is maintained, the two end portions of the center magnet are respectively shifted to the sides of mutually different linear parts of the peripheral magnet in accordance with the target-side polarity of the center magnet.
Provided is an evaporation source for vacuum deposition devices which has a high deposition rate onto a deposition target and makes it possible to evaporate a large amount per unit of time when evaporating an evaporant and depositing the same onto the deposition target. This evaporation source DS for vacuum deposition devices Dm according to the present invention is positioned inside a vacuum chamber 1, and is used to evaporate a solid evaporant and deposit the same onto a deposition target, said evaporation source DS being equipped with: a crucible 4 which is capable of storing an evaporant Ms and has a discharge port 41 through which the evaporated evaporant is discharged toward the deposition target Sw; a heating means 6 capable of heating the evaporant in the crucible; and an evaporation promoter 5 provided inside the crucible in a manner such that one portion 5a thereof is immersed in the evaporant Ml, which has been melted by heating, while a gap D1 exists between the remaining portion 5b thereof and the inner surface 42 of the crucible.
H01L 51/50 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED)
H05B 33/10 - Appareils ou procédés spécialement adaptés à la fabrication des sources lumineuses électroluminescentes
Provided is an etching apparatus for etching a silicon oxide film using a processing gas containing hydrogen fluoride and ammonia, including: a chamber; a gas supply unit; a water vapor supply unit; and a control unit. The chamber is configured such that a substrate having the silicon oxide film on a surface thereof can be disposed therein. The gas supply unit is configured to be capable of supplying one of the processing gas and a precursor gas of the processing gas to the chamber. The water vapor supply unit is capable of supplying water vapor to the chamber. The control unit controls the gas supply unit and the water vapor supply unit to supply the water vapor and one of the processing gas and the precursor gas to the chamber during etching processing.
The invention provides an apparatus that causes film formation particles to adhere to a surface of a substrate moving in a hermetically-sealable chamber and thereby forms a thin film thereon and includes: a plasma generator; a substrate transfer unit; a film-formation source supplier; and a film-formation region limiter. The plasma generator includes a magnet located at the other surface of the substrate and a gas supplier that supplies a film forming gas to near the surface of the substrate. The film-formation region limiter includes a shield that is located close to the surface of the substrate and has an opening. The ratio of a diameter of the opening of the shield to a diameter of the plasma generated by the plasma generator in a direction along the surface of the substrate is in a range of less than or equal to 110/100.
C23C 14/32 - Evaporation sous vide par évaporation suivie d'une ionisation des vapeurs
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
C23C 14/04 - Revêtement de parties déterminées de la surface, p.ex. au moyen de masques
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
H01L 27/115 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs
H01L 27/11507 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs avec condensateurs ferro-électriques de mémoire caractérisées par la région noyau de mémoire
H01L 27/1159 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs les électrodes de grille comprenant une couche utilisée pour ses propriétés de mémoire ferro-électrique, p.ex. semi-conducteur métal-ferro-électrique [MFS] ou semi-conducteur d’isolation métal-ferro-électrique-métal [MFMIS] caractérisées par la région noyau de mémoire
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
H01L 29/792 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à isolant de grille à emmagasinage de charges, p.ex. transistor de mémoire MNOS
55.
HIGH-FREQUENCY POWER CIRCUIT, PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING METHOD
A high-frequency power circuit includes: a first antenna circuit (Lin, VCin1, VCin2); a second antenna circuit (Lo, VCo1, VCo2); and a controller (51). The first antenna circuit includes a first antenna (Lin) for plasma generation; a first distribution capacitor (VCin1); and a first variable capacitor (VCin2). The second antenna circuit includes a second antenna (Lo) for plasma generation; a second distribution capacitor (VCo1); and a second variable capacitor (VCo2). The controller sets the capacitance value of the first variable capacitor so that the phase difference between the current and the voltage of a serial section of the first antenna and the first variable capacitor during plasma generation becomes small, such setting performed on the basis of the result of detecting the phase difference. The controller also sets the capacitance value of the second variable capacitor so that the phase difference between the current and the voltage of a serial section of the second antenna and the second variable capacitor during plasma generation becomes small, such setting performed on the basis of the result of detecting the phase difference.
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p.ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
C23C 16/507 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes externes, p.ex. dans des réacteurs de type tunnel
The vacuum processing apparatus for performing predetermined vacuum processing on a processing surface of a to-be-processed substrate is made up of: a vacuum chamber having disposed therein a to-be-processed substrate and having formed, on an upper wall of the vacuum chamber, a mounting opening facing the processing surface where a direction in which the processing surface looks is defined as an upper side; a processing unit for performing therein vacuum processing; and a communication pipe having a predetermined length and being interposed between the vacuum chamber and the processing unit such that predetermined processing is performed, through the communication pipe, on the to-be-processed substrate inside the vacuum chamber. The processing unit has an engaging means to which is coupled a swing arm for swinging about a rotary shaft extending perpendicularly to a vertical direction for selectively engaging the vacuum chamber and the communication pipe or the processing unit and the communication pipe.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
Provided is a sputtering apparatus which is capable of suppressing a local temperature rise at an outer peripheral part of a to-be-processed substrate. The sputtering apparatus SM has: a vacuum chamber in which a target and the to-be-processed substrate Sw are disposed face-to-face with each other; a shield plate for enclosing a film forming space between the target and the to-be-processed substrate; and a cooling unit for cooling the shield plate. The shield plate has a first shield plate part which is disposed around the to-be-processed substrate and which has a first opening equivalent in contour to the to-be-processed substrate. The cooling unit includes a first coolant passage which is disposed in the first shield plate part and which has a passage portion extending all the way to the first shield plate part positioned around the first opening.
The invention provides a film formation apparatus that includes: a transfer unit that transfers a substrate; a film formation unit that forms an electrolyte film on a film formation region of the substrate transferred by the transfer unit; and an extraneous-material removal unit that comes into contact with the electrolyte film of the substrate transferred by the transfer unit after film formation of the film formation unit and thereby removes extraneous materials contained in the film formation region.
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
C23C 14/56 - Appareillage spécialement adapté au revêtement en continu; Dispositifs pour maintenir le vide, p.ex. fermeture étanche
In a vacuum processing apparatus for performing a predetermined vacuum processing on a surface of a sheet-like base material while keeping the base material to travel inside the vacuum chamber, the can-roller of this invention disposed to lie opposite to a vacuum processing unit has an axial body; an inner cylindrical body to be inserted onto an outside of the axial body; an outer cylindrical body enclosing an outer cylindrical surface of the inner cylindrical body with a gap therebetween, and cover bodies for respectively closing axial both ends of the inner cylindrical body. Each of the cover bodies has a plurality of flow passages. A cross-section of each of the fluid passages overlaps a cross-section of the cover body. A cross-sectional area of the gap between the inner cylindrical body and the outer cylindrical body is set to a size that can obtain a predetermined flow velocity.
A freeze-drying method includes depressurizing containers filled with a liquid including a raw material and a medium with a freeze-drying device to freeze the liquid from a liquid surface. The depressurizing includes executing an exhaust mitigation process that performs the depressurizing at an exhaust capability that is less than a rated exhaust capability of the freeze-drying device, and using a partial pressure value of the medium to determine when the exhaust mitigation process ends. The executing an exhaust mitigation process includes maintaining an exhaust speed of a gas capture pump configured to discharge gas from a freeze-drying chamber accommodating the containers, and decreasing an exhaust speed of a positive-displacement pump configured to discharge gas from a space accommodating the gas capture pump.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
111 connected to a power source circuit, which are mechanically separated. The power receiving unit and the power supply unit are disposed so as to face each other at the axial-direction front end of the inner cylinder and the axial-direction rear end of the straight section.
Provided are: a laminated structure having strong bending-resistance; and a method for manufacturing the laminated structure. A laminated structure LS according to the present invention has a first titanium layer L1, an aluminum layer L2, and a second titanium layer L3 which are sequentially laminated, wherein each of the first and second titanium layers has a crystal structure having diffraction peaks on a (002) plane and a (100) plane, in the Miller index as measured by the X-ray diffraction, the half-value width of the diffraction peak on the (002) plane is at most 1.0 deg, and the half-value width of the diffraction peak on the (100) plane is at most 0.6 deg.
C23C 14/14 - Matériau métallique, bore ou silicium
B32B 15/01 - Produits stratifiés composés essentiellement de métal toutes les couches étant composées exclusivement de métal
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
Provided is a drive block for a rotary cathode unit that is capable of supplying electric power to a component inside an inner cylinder without the need for waterproofing. A drive block DB for a rotary cathode unit Rc comprising a first drive means 92 for driving a target Tg to rotate about an axis is provided with: a hollow cylinder 4 having a straight section axially extending from an inner cylinder 3; a first inner cylinder body 5 inserted over the straight section of the hollow cylinder and defining a first path Fp3 communicating with a refrigerant circulation path Fp2 inside the inner cylinder; a second inner cylinder body 5 inserted over the first inner cylinder body and defining a second path Fp4 communicating with a refrigerant circulation path Fp1 between the target and the inner cylinder; and an outer cylinder body 7 fitted over the second inner cylinder body with a bearing Br2 therebetween, connected to one axial end of the target, and to which motive power from the drive means is transmitted. The drive block is further provided with isolation means Sv1 to Sv3 for isolating an internal space formed by the inner cylinder and the hollow cylinder, which communicate with each other in a state in which the hollow cylinder is connected to one end of the inner cylinder, from a vacuum atmosphere.
This sputtering device is provided with a vacuum chamber, a cathode, a target, a substrate holding unit, and an oscillation unit. The oscillation unit has an oscillation shaft extending in an oscillation direction, an oscillation drive part for causing the substrate holding unit to oscillate in an axial direction of the oscillation shaft, and a rotary drive part disposed on the oscillation shaft and causing the oscillation shaft to turn. The rotary drive part is capable of rotating the substrate holding unit between a horizontal mounting position where a substrate to be processed, which is positioned substantially horizontally, is mounted and dismounted and a vertical processing position where a surface to be processed of the substrate is erected along a substantially vertical direction. The oscillation unit is provided with a deposition-preventing plate arranged around the substrate and oscillating synchronously with the substrate holding unit.
A vacuum processing apparatus of the present invention is a vacuum processing apparatus which performs plasma processing. The vacuum processing apparatus includes an electrode flange, a shower plate, an insulating shield, a processing chamber in which a processing-target substrate is to be disposed, an electrode frame, and a slide plate. The electrode frame and the slide plate are slidable in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered. The shower plate is supported by the electrode frame using a support member penetrating through an elongated hole. The elongated hole is formed so that the support member is relatively movable in the elongated hole in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/505 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence
A silicon dry etching method of the invention, includes: preparing a silicon substrate; forming a mask pattern having an opening on the silicon substrate; forming a deposition layer on the silicon substrate in accordance with the mask pattern while introducing a first gas; carrying out a dry etching process with respect to the silicon substrate in accordance with the mask pattern while introducing a second gas, and thereby forming a recess pattern on a surface of the silicon substrate; and carrying out an ashing process with respect to the silicon substrate while introducing a third gas.
[Problem] To freeze droplets of a raw material liquid while maintaining an ultra-high cooling speed with a short fall distance so as to not alter characteristics of a solute or dispersoid. [Solution] A vacuum freeze-drying method according to an embodiment of the present invention comprises: a step for ejecting a raw material liquid into a vacuum tank from a spray nozzle to produce frozen fine particles due to self-freezing of the raw material liquid, and drying the frozen fine particles thus produced to produce dried powder. The raw material liquid is ejected from the spray nozzle such that the initial ejection speed of the raw material liquid from the spray nozzle is 6-33 m/sec with the inside of the vacuum tank maintained at a partial water vapor pressure corresponding to the spontaneous freezing temperature of the raw material liquid. When the maximum diameter of the frozen fine particles thus produced exceeds a predetermined value, or when the droplets of the raw material liquid are not frozen, the ejection flow rate of the raw material liquid or the properties of the spray nozzle is adjusted such that frozen fine particles are produced so as to have a maximum diameter not more than the predetermined value.
F26B 5/06 - Procédés de séchage d'un matériau solide ou d'objets n'impliquant pas l'utilisation de chaleur par évaporation ou sublimation de l'humidité sous une pression réduite, p.ex. sous vide le procédé impliquant la congélation
F26B 17/10 - Machines ou appareils à mouvement progressif pour le séchage d'un matériau en vrac, à l'état plastique ou sous forme fluidisée, p.ex. granulés, fibres brutes le mouvement étant réalisé par des courants de fluides, p.ex. provenant d'une tuyère
F26B 25/00 - SÉCHAGE DE MATÉRIAUX SOLIDES OU D'OBJETS PAR ÉLIMINATION DU LIQUIDE QUI Y EST CONTENU - Parties constitutives d'application générale non couvertes par un des groupes ou
The present invention provides a technology capable of inhibiting, in a vacuum processing apparatus that conveys a plurality of substrate holders along a conveying path formed to have a projected shape on a vertical surface, the projected shape being a continuous ring shape, dust from being generated during conveyance of a substrate holder. The present invention includes, in a vacuum chamber 2, an anti-sag member 35 assembled to a first drive unit 36 provided on an outer side with respect to a conveying direction of the conveying path, the vacuum chamber 2 including a conveying path formed to have a projected shape on the vertical surface, the projected shape being a continuous ring shape, a single vacuum atmosphere being formed in the vacuum chamber 2. A travel roller 54 of the anti-sag member 35 travels while being guided and supported by a guide unit 17 that is provided below a return-path-side conveying portion 33c positioned on a lower side of a substrate holder conveying mechanism 3 and extends in a second conveying direction P2, and the first drive part 36 is configured to come into contact with a first driven unit 12 of a substrate holder 11 and drive the substrate holder 11 along the conveying path in the second conveying direction P2.
C23C 14/56 - Appareillage spécialement adapté au revêtement en continu; Dispositifs pour maintenir le vide, p.ex. fermeture étanche
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p.ex. entre différents postes de travail
[Problem] To homogenize film thickness distribution. [Solution] This film forming method involves film forming by sputtering on a substrate using a plurality, at least three, of rotary targets that each have a central shaft and a target surface and are provided, in the interior, with a magnet that is able to rotate about the central shaft. The plurality of rotary targets are arranged so that the central shafts are parallel to one another and are also parallel to the substrate. The film forming by sputtering is performed on the substrate as power is being fed to the plurality of rotary targets and the respective magnets of the plurality of rotary targets are being moved over an arc that has an A-point closest to the substrate about the central shafts. Magnets of at least a pair of rotary targets arranged at two ends, among the plurality of rotary targets, have a shorter duration of film forming in a region that is further apart from the center of the substrate than the A-point on the arc than a duration of film forming in a region closer to the center of the substrate than the A-point.
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
70.
METAL WIRING STRUCTURE, MANUFACTURING METHOD FOR METAL WIRING STRUCTURE, AND SPUTTERING TARGET
[Problem] To provide a metal wiring structure that has low electrical resistance, excellent heat resistance, and flexibility, and a manufacturing method for said metal wiring structure. [Solution] To achieve the above objective, a metal wiring structure according to the present invention is equipped with a metal wiring film having a main component comprising aluminum and an additive element that is added to said main component and comprises 0.005 at% to 0.88% of iron, and a first cap layer that is laminated on said metal wiring film. According to such a metal wiring structure, a metal wiring structure is provided that has low electrical resistance, excellent heat resistance, and flexibility.
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/3205 - Dépôt de couches non isolantes, p.ex. conductrices ou résistives, sur des couches isolantes; Post-traitement de ces couches
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
C23C 14/14 - Matériau métallique, bore ou silicium
Machines for the deposition of thin films upon semiconductor wafers; Semiconductor wafer processing equipment, Semiconductor wafer conveying machines, Semiconductor wafer manufacturing machines
Machines and systems for the deposition of thin films upon semiconductor wafers; Semiconductor wafer processing equipment, Semiconductor wafer conveying machines, Semiconductor wafer manufacturing machines and systems.
73.
MAGNETRON SPUTTERING DEVICE, AND FILM FORMING METHOD USING SAID MAGNETRON SPUTTERING DEVICE
11 configured so as to be capable of suppressing damage to an organic layer as much as possible for a case in which a transparent conductive oxide film is formed on a surface of the organic layer. A cathode unit Sc is provided with cylindrical targets Tg1, Tg2 arranged side by side with gap therebetween in the X-axis direction. Driving means Db1, Db2 that rotationally drive each cylindrical target around the Y-axis are provided, and magnet units Mu1, Mu2 are respectively assembled inside each cylindrical target. The magnet units forming a pair respectively have a central magnet 5a and peripheral magnets 5b, and form a tunnel-shaped magnetic field Mf in a space between the cylindrical target and a film formation surface. The magnet units forming a pair are configured such that the magnetic field strength of a Z-axis component becomes zero on the Z-axis passing through a position at which the film thickness is maximized at the film formation surface when a film is formed on an object Sw, on which a film is to be formed, in a state where the object Sw is stationary and opposing the cathode unit.
H01L 51/50 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés pour l'émission de lumière, p.ex. diodes émettrices de lumière organiques (OLED) ou dispositifs émetteurs de lumière à base de polymères (PLED)
H05B 33/10 - Appareils ou procédés spécialement adaptés à la fabrication des sources lumineuses électroluminescentes
74.
Method of manufacturing OTS device, and OTS device
A method of manufacturing an OTS device of the invention is a method of manufacturing OTS device including a first conductor, an OTS portion made of chalcogenide, and a second conductor which are layered in order and disposed on an insulating substrate. The manufacturing method includes: a step D of forming a resist so as to coat part of an upper surface of the second conductor; a step E of dry etching a region which is not coated with the resist; and a step F of ashing the resist. In the step E, the second conductor, all of the OTS portion, and an upper portion of the first conductor are removed by an etching treatment once in a depth direction of the region.
H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
A vacuum processing apparatus SM of this invention has: a vacuum chamber which performs a predetermined processing on a to-be-processed substrate that is set in position in the vacuum chamber. Inside the vacuum chamber there is disposed a deposition preventive plate) which is made up of a fixed deposition preventive plate and a moveable deposition preventive plate which is moveable in one direction. Further provided are: a metal block body disposed in a vertical posture on an inner wall surface of the vacuum chamber; and a cooling means for cooling the block body. In a processing position in which a predetermined vacuum processing is performed on the to-be-processed substrate, a top surface of the block body is arranged to be in proximity to or in contact with the moveable deposition preventive plate.
To provide an electrostatic chuck that stably supports a substrate while suppressing a rapid increase in the volume of a gas, a vacuum processing apparatus, and a substrate processing method.
To provide an electrostatic chuck that stably supports a substrate while suppressing a rapid increase in the volume of a gas, a vacuum processing apparatus, and a substrate processing method.
An electrostatic chuck according to an embodiment of the present invention includes: a chuck plate that has a first surface supporting a substrate and a second surface opposite to the first surface. The chuck plate includes an exhaust passage that exhausts a gas from between the substrate and the first surface, the gas being emitted from the substrate between the substrate and the first surface when the substrate is supported by the first surface.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
A film formation apparatus of the present invention is a film formation apparatus which performs deposition on a substrate to be processed, and includes a supply device that is disposed in an evacuable vacuum chamber and supplies a deposition material, and a holding device that holds the substrate to be processed during deposition. The holding device includes a deposition preventing plate that covers a region to which the deposition material is adhered in the holding device, a holder that holds the substrate to be processed, and a position setter that sets a position of the substrate to be processed when the deposition preventing plate and the holder sandwich and hold the substrate to be processed. The position setter includes a roller that comes into contact with a peripheral edge end surface portion of the substrate to be processed.
A sputtering apparatus (SM) has a vacuum chamber in which is disposed a target. A plasma atmosphere is formed inside the vacuum chamber to thereby sputter the target. The sputtered particles splashed from the target are caused to get adhered to, and deposited on, a surface of a substrate disposed in the vacuum chamber, thereby forming a predetermined thin film thereon. At such a predetermined position inside the vacuum chamber as is subject to adhesion of the sputtered particles splashed from the target, there is disposed an adhesion body whose at least the surface of adhesion of the sputtered particles is made of a material equal in kind to that of the target. The adhesion body has connected thereto a bias power supply for applying a bias voltage having negative potential at the time of forming the plasma atmosphere.
A sputtering apparatus of the present invention is an apparatus performing deposition on a substrate to be processed using a sputtering method and includes a vacuum chamber, a target provided on a surface of a cathode provided in the vacuum chamber, a substrate holder provided in the vacuum chamber to face the target, and a swing unit that causes the substrate holder to be swingable with respect to the target. A swing region of the substrate to be processed in the substrate holder is set to be smaller than an erosion region of the target.
A substrate guide of the present invention is provided on a carrier frame of a carrier which holds a substrate substantially vertically so that a surface of the substrate is in a substantially vertical direction and supports the substrate by being in contact with at least a peripheral edge end surface portion of the substrate. The substrate guide includes a base attached to the carrier frame, a substrate support which comes into contact with the peripheral edge end surface portion of the substrate held by the carrier and is attached to the base to be movable in a normal direction of the peripheral edge end surface portion in a direction parallel to the surface of the substrate, and a force-applying member which applies a force to the substrate support toward the substrate with respect to the base.
B65G 49/06 - Systèmes transporteurs caractérisés par leur utilisation à des fins particulières, non prévus ailleurs pour des matériaux ou objets fragiles ou dommageables pour des feuilles fragiles, p.ex. en verre
Embodiments of the present invention are directed to forming a sub-stoichiometric metal-oxide film using a modified atomic layer deposition (ALD) process. In a non-limiting embodiment of the invention, a first precursor and a second precursor are selected. The first precursor can include a metal and a first ligand. The second precursor can include the same metal and a second ligand. A substrate can be exposed to the first precursor during a first pulse of an ALD cycle. The substrate can be exposed to the second precursor during a second pulse of the ALD cycle. The second pulse can occur directly after the first pulse without an intervening thermal oxidant. The substrate can be exposed to the thermal oxidant during a third pulse of the ALD cycle.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 29/51 - Matériaux isolants associés à ces électrodes
82.
NANOTUBE MEDIATED DELIVERY SYSTEM AND METHODS COMPRISING THE SAME
COMMONWEALTH SCIENTIFIC AND INDUSTRIAL RESEARCH ORGANISATION (Australie)
MONASH UNIVERSITY (Australie)
ULVAC, INC. (Japon)
Inventeur(s)
Voelcker, Nicolas Hans
Elnathan, Roey
Aslanoglou, Stella
Chen, Yaping
Abrégé
The present disclosure relates generally to a molecular delivery system and methods of using the molecular delivery system to deliver biomolecules into cells. In particular, the molecular delivery system comprises a nanotube (NT) array comprising a plurality of nanotubes (NTs) which are used to deliver biomolecules to cells. The NTs can be loaded with molecules that can be delivered into cells following contact (e.g. penetration) by the NTs.
C12N 15/89 - Introduction de matériel génétique étranger utilisant des procédés non prévus ailleurs, p.ex. co-transformation utilisant la micro-injection
B82Y 5/00 - Nanobiotechnologie ou nanomédecine, p.ex. génie protéique ou administration de médicaments
83.
Oxide semiconductor thin film, thin film transistor, method producing the same, and sputtering target
H01L 29/24 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des matériaux semi-conducteurs inorganiques non couverts par les groupes , , ou
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
A housing case for a crystal oscillator monitors a film thickness of a thin film to be formed on a surface of the crystal oscillator, the monitoring being performed by measuring a resonance frequency during film formation in a vacuum atmosphere. The housing case has: a case main body having disposed on an upper surface thereof a plurality of first recessed parts each being capable of housing therein a crystal oscillator in a horizontal posture with a main surface thereof facing in an up-and-down direction; a first cap body detachably mounted on the case main body from an upper side thereof; and an engaging means for engaging the first cap body relative to the case main body. The engaging means is so constructed and arranged that, in a state in which the first cap body is engaged with the case main body, the crystal oscillators housed in the first recessed parts are restrained from jumping out of position.
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
A magnet unit for a magnetron sputtering apparatus is disposed above the target has: a yoke made of magnetic material and is disposed to lie opposite to the target; and plural pieces of magnets disposed on a lower surface of the yoke, wherein a leakage magnetic field in which a line passing through a position where the vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on such a lower space of the target as is positioned between the center of the target and a periphery thereof, the magnet unit being driven for rotation about the center of the target. In a predetermined position of the yoke there is formed a recessed groove in a circumferentially elongated manner along an imaginary circle with the center of the target serving as a center.
A magnet unit for a magnetron sputtering apparatus is disposed above the target has: a yoke made of magnetic material and is disposed to lie opposite to the target; and plural pieces of magnets disposed on a lower surface of the yoke, wherein a leakage magnetic field in which a line passing through a position where the vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on such a lower space of the target as is positioned between the center of the target and a periphery thereof, the magnet unit being driven for rotation about the center of the target. In a predetermined position of the yoke there is formed a recessed groove in a circumferentially elongated manner along an imaginary circle with the center of the target serving as a center.
A contact-type power supply apparatus includes: a first cylindrical body; a second cylindrical body configured to surround the first cylindrical body, be disposed concentrically to the first cylindrical body, and be rotatable around a central axis of the first cylindrical body; an annular body configured to surround the first cylindrical body, be disposed concentrically to the first cylindrical body, be in non-contact with the second cylindrical body, and have an end surface being an inclined surface having a tapered shape; and a contact body configured to face the annular body in an axial direction of the first cylindrical body, be electrically connected to the second cylindrical body, rotate around the central axis around the first cylindrical body together with the second cylindrical body, have a contact surface that is in contactable with the inclined surface, and receive an electric potential of the annular body by sliding with the annular body.
An evaporation source according to the present invention is for being heated by an electron beam in vacuo to evaporate or sublimate an evaporating material, and forming a compound film on a surface of a moving substrate by codeposition, the compound film containing lithium. A hearth liner provided with a cooling part, and a plurality of liners which are housed in the hearth liner, and inside which the evaporating material is put are included.
[Object] It is an object of the present invention to provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor including the aluminum alloy film.
[Solving Means] In order to achieve the above-mentioned object, an aluminum alloy film according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. Such an aluminum alloy film has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.
C22F 1/04 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid de l'aluminium ou de ses alliages
C23C 14/14 - Matériau métallique, bore ou silicium
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
A plasma CVD device (10) includes a vacuum container (21) including a space accommodating a film formation subject (S), a storage (30) storing hydrogen-free isocyanate silane and heating the isocyanate silane to generate an isocyanate silane gas supplied to the vacuum container (21), a pipe (11) connecting the storage (30) to the vacuum container (21) to supply the isocyanate silane gas generated by the storage (30) to the vacuum container (21), a temperature adjuster (12) adjusting a temperature of the pipe (11) to 83° C. or higher and 180° C. or lower, an electrode (22) disposed in the vacuum container (21), and a power supply (23) supplying high-frequency power to the electrode (22). When a silicon oxide film is formed on the film formation subject (S) in the vacuum container (21), pressure of the vacuum container (21) is greater than or equal to 50 Pa and less than 500 Pa.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/509 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes internes
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
A sputtering apparatus SM has: a vacuum chamber in which a substrate and a target are disposed to lie opposite to each other; a plasma generating means generating a plasma inside the vacuum chamber; and a magnet unit disposed above the target. The magnet unit has a plurality of magnets with different polarities on a substrate side. A leakage magnetic field in which a line passing through a position where a vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on such a space below the target as is positioned between the center of the target and a periphery thereof. The magnet unit is divided, on an imaginary line extending from the center of the target toward a periphery thereof, into a plurality of segments each having a plurality of magnets.
A laterally switching cell structure including a metal-insulator-metal stack includes an active metal oxide layer including one or more sub-stoichiometric regions. The metal oxide layer includes one or more metal-oxides deposited conformally using a mixed precursor atomic layer deposition process. A graded oxygen profile in the metal oxide layer(s) of the stack including a mirrored impurity density may be formed wherein the sub-stoichiometric region(s) include a relatively high density of impurities obtained as reaction by-products. Arrays of cell structures can be formed with no requirement for a thick active electrode, allowing for more space for a metal fill and optional selector, thereby reducing access resistance.
H01L 45/00 - Dispositifs à l'état solide spécialement adaptés pour le redressement, l'amplification, la production d'oscillations ou la commutation, sans barrière de potentiel ni barrière de surface, p.ex. triodes diélectriques; Dispositifs à effet Ovshinsky; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
A thin film manufacturing apparatus according to the present invention forms a thin film by adhering film-forming particles to one surface of a substrate moving in a sealable chamber, the apparatus having a plasma generating unit, a substrate moving unit, a film-forming source supply unit, and a film formation region defining unit. The plasma generating unit includes a magnet located on the other surface side of the substrate and a gas supply unit that supplies a film-forming gas to the vicinity of the one surface of the substrate. The film formation region defining unit has a shielding portion that is located near the one surface of the substrate and has an opening. The ratio of the diameter dimension of the opening in the shielding portion to the diameter dimension of the plasma, which is generated by the plasma generating unit, in the direction along the one surface of the substrate is set in the range of 110/100 or less.
C23C 14/32 - Evaporation sous vide par évaporation suivie d'une ionisation des vapeurs
C23C 14/04 - Revêtement de parties déterminées de la surface, p.ex. au moyen de masques
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
A film forming apparatus according to the present invention comprises a transport unit that transports a substrate, a film forming unit for forming an electrolyte film in a film forming region of the substrate transported by the transport unit, and a foreign matter removing unit that comes into contact with the electrolyte film on the substrate transported by the transport unit after the film has been formed in the film forming unit to remove foreign matter contained in the film forming region.
H01M 6/02 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Éléments primaires; Leur fabrication - Détails
H01M 6/18 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Éléments primaires; Leur fabrication Éléments avec électrolytes non aqueux avec électrolyte solide
Provided is a vacuum processing apparatus which is capable of performing baking processing of a deposition preventive plate without impairing the function of being capable of cooling the deposition preventive plate disposed inside a vacuum chamber. The vacuum processing apparatus has a vacuum chamber for performing a predetermined vacuum processing on a to-be-processed substrate that is set in position inside the vacuum chamber. A deposition preventive plate is disposed inside the vacuum chamber. Further disposed are: a metallic-made block body vertically disposed on an inner surface of the lower wall of the vacuum chamber so as to lie opposite to a part of the deposition preventive plate with a clearance thereto; a cooling means for cooling the block body; and a heating means disposed between the part of the deposition preventive plate and the block body to heat the deposition preventive plate by heat radiation.
A measurement abnormality detection device can produce a plurality of specimens from a resonance characteristic value. The plurality of specimens are to be treated as a group of specimens obtained in chronological order, wherein each of the specimens has two or more dimensions that are different from each other. The measurement abnormality detection device is equipped with an abnormality detection unit (24) which utilizes a detection character space that is expressed by all of the dimensions of the specimens to determine whether or not a specimen outside the detection character space is included in a group of specimens obtained by a measurement unit by the theoretical calculation employing the group of specimens and the detection character space.
C23C 14/54 - Commande ou régulation du processus de revêtement
G01B 7/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
G01N 5/02 - Analyse des matériaux par pesage, p.ex. pesage des fines particules séparées d'un gaz ou d'un liquide en absorbant ou adsorbant les constituants d'un matériau et en déterminant la variation de poids de l'adsorbant, p.ex. en déterminant la teneur en eau
97.
ALUMINUM ALLOY TARGET, ALUMINUM ALLOY WIRING FILM, AND METHOD FOR PRODUCING ALUMINUM ALLOY WIRING FILM
[Problem] To provide: an aluminum alloy target having low resistance and excellent heat resistance and flexibility; an aluminum alloy wiring film; and a method for producing an aluminum alloy wiring film. [Solution] In order to achieve the above-mentioned purpose, an aluminum alloy target according to one embodiment comprises a main ingredient which comprises aluminum and an element group which is added to the main ingredient and comprises 0.005 at% to 0.88% inclusive of iron and 0.01 at% to 0.05 at% inclusive of vanadium. By using the aluminum alloy target, an aluminum alloy wiring film having low resistance and excellent heat resistance and flexibility can be formed.
[Object] To provide a sputtering target with further improved sputtering efficiency, and a method of producing the sputtering target.
(004)) of X-ray diffraction peaks corresponding to a (100) plane, a (002) plane, a (101) plane, a (102) plane, a (110) plane, a (103) plane, a (112) plane, and a (004) plane of a hexagonal close-packed lattice structure along the sputtering surface is 0.85 or more.
C22C 19/07 - Alliages à base de nickel ou de cobalt, seuls ou ensemble à base de cobalt
C22F 1/10 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid du nickel ou du cobalt ou de leurs alliages
H01F 41/18 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateurs; Appareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour appliquer des pellicules magnétiques sur des substrats par pulvérisation cathodique
Provided is a film formation method in which, when a dielectric film is formed by target sputtering, it is possible to minimize the number of particles adhered immediately after film formation to a substrate surface that has been treated, without compromising the function of effectively suppressing the induction of abnormal discharge. This film formation method is for forming a dielectric film on a substrate Sw surface that is subjected to treatment by sputtering a target 2 in a vacuum chamber 1, and the method is configured so that a negative potential is applied in a pulsed form to a target during the sputtering of the target, the frequency at which the negative potential is applied in the pulsed form is set to 100-150 kHz, and the duration Ton of the negative potential application is set to a range which is longer than 5 μsec but shorter than 8 μsec.
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p.ex. pour masquer ou en utilisant des techniques photolithographiques; Post-traitement de ces couches; Emploi de matériaux spécifiés pour ces couches
H01L 21/318 - Couches inorganiques composées de nitrures
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p.ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
The sputtering apparatus has a vacuum chamber in which is disposed a target. While rotating a circular substrate at a predetermined rotational speed with a center of the substrate, the target is sputtered to form the thin film on the surface. The sputtering apparatus has: a stage for rotatably holding the substrate in a state in which the center of the substrate is offset by a predetermined distance to radially one side from the center of the target; and a shielding plate disposed between the target and the substrate on the stage. The shielding plate has an opening part allowing to pass sputtered particles scattered out of the target as a result of sputtering the target. The opening part has a contour in which, with a central region of the substrate serving as an origin, the area of the opening part gradually increases from the origin toward radially outward.
