A semiconductor device includes a bridging device having an external data interface, an external status interface, and a plurality of internal data interfaces. A plurality of memory devices are each connected to the bridging device via one of the internal data interfaces. Each of the memory devices has a ready/busy output connected to an input of the bridging device. The bridging device is configured to output a current state of each ready/busy output in a packetized format on the external status interface in response to a status request command received on the external status interface; and read information from a status register of a selected memory device over one of the internal data interfaces and provide the information on the external data interface in response to a status read command received on the external data interface. A method of operating a semiconductor device is also disclosed.
An apparatus and method for delivering power to a hybrid vehicle including a powertrain including an engine and having a power take-off is disclosed. The apparatus includes an electric motor operable to generate a torque, the motor being coupled to transmit a starting torque through the power take-off of the powertrain for starting the engine.
B60K 17/28 - Agencement ou montage des transmissions sur les véhicules caractérisées par la disposition, l'emplacement ou le type de prise de force
B60K 1/00 - Agencement ou montage des ensembles de propulsion électriques
B60K 6/20 - Agencement ou montage de plusieurs moteurs primaires différents pour une propulsion réciproque ou commune, p.ex. systèmes de propulsion hybrides comportant des moteurs électriques et des moteurs à combustion interne les moteurs primaires étant constitués de moteurs électriques et de moteurs à combustion interne, p.ex. des VEH
B60K 6/40 - Agencement ou montage de plusieurs moteurs primaires différents pour une propulsion réciproque ou commune, p.ex. systèmes de propulsion hybrides comportant des moteurs électriques et des moteurs à combustion interne les moteurs primaires étant constitués de moteurs électriques et de moteurs à combustion interne, p.ex. des VEH caractérisés par des appareils, des organes ou des moyens spécialement adaptés aux VEH caractérisés par l'assemblage ou la disposition relative des organes
B60K 6/42 - Agencement ou montage de plusieurs moteurs primaires différents pour une propulsion réciproque ou commune, p.ex. systèmes de propulsion hybrides comportant des moteurs électriques et des moteurs à combustion interne les moteurs primaires étant constitués de moteurs électriques et de moteurs à combustion interne, p.ex. des VEH caractérisés par l'architecture du véhicule électrique hybride
B60L 11/14 - avec possibilité de propulsion mécanique directe
3.
METHOD AND APPARATUS FOR CONNECTING MEMORY DIES TO FORM A MEMORY SYSTEM
A method, system and apparatus for connecting multiple memory device dies (51-54) to a substrate (56) which requires no trace between dies. A first embodiment assigns the connections of a memory device die (51) to be matched with other memory device dies (52-54) when mounted in staggered formation on the both sides of a substrate. The result is a daisy chained array connecting multiple integrated circuits with reduced capacitive loading. The capacitive loadings on the buses (57,58) between memory device dies (51,52,53) are reduced. The number of vias (57,58,59) is reduced because two stubs on the both sides of the substrate share one via. Another embodiment FIG 7 arranges the dies in a closed loop.
H01L 21/58 - Montage des dispositifs à semi-conducteurs sur des supports
G11C 11/34 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs
G11C 5/02 - Disposition d'éléments d'emmagasinage, p.ex. sous la forme d'une matrice
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
4.
DEVICE SELECTION SCHEMES IN MULTI CHIP PACKAGE NAND FLASH MEMORY SYSTEM
Device selection schemes in multi-chip package NAND flash memory systems are provided. A memory system is provided that has a memory controller, and a number of memory devices connected to the controller via a common bus with a multi-drop connection. The memory controller performs device selection by command. A corresponding memory controller is provided which performs device selection by command. Alternatively, device selection is performed by address. A memory device is provided use in memory system comprising a memory controller, and a number of memory devices inclusive of the memory device connected to the controller via a common bus with a multi-drop connection. The memory device has a register containing a device identifier, and a device identifier comparator that compares selected bits of a received input address to contents of the register to determine if there is a match. The memory device is selected if the device identifier comparator determines there is a match.
G11C 8/12 - Circuits de sélection de groupe, p.ex. pour la sélection d'un bloc de mémoire, la sélection d'une puce, la sélection d'un réseau de cellules
G11C 16/06 - Circuits auxiliaires, p.ex. pour l'écriture dans la mémoire
G11C 16/10 - Circuits de programmation ou d'entrée de données
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
A solid-state drive architecture and arrangement for standardized disk drive form factors, PCI type memory cards and general motherboard memory. The solid-state drive architecture is modular in that a main printed circuit board (PCB) of the memory system includes a host interface connector, a memory controller, and connectors. Each connector can removably receive a memory blade, where each memory blade includes a plurality of memory devices serially connected to each other via a serial interface. Each memory blade includes a physical serial interface for providing data and control signals to a first memory device in the serial chain and for receiving data and control signals from a last memory device in the serial chain. Each memory blade can be sized in length and width to accommodate any number of memory devices on either side thereof.
A memory device, comprising a first control input port, a second control input port, a third control input port, a data input port, a data output port, an internal memory and control circuitry. The control circuitry is responsive to a control signal on the first control input port to capture command and address information via the data input port. When the command is a read command, the control circuitry is further responsive to a read control signal on the second control input port to transfer data associated with the address information from the internal memory onto the data output port. When the command is a write command, the control circuitry is responsive to a write control signal on the third control input port to write data captured via the data input port into the internal memory at a location associated with the address information.
A multi-chip package has a substrate with electrical contacts for connection to an external device. A CPU die is disposed on the substrate and is in communication with the substrate. The CPU die has a plurality of processor cores occupying a first area of the CPU die, and an SRAM cache occupying a second area of the CPU die. A DRAM cache is disposed on the CPU die and is in communication with the CPU die. The DRAM cache has a plurality of stacked DRAM die. The plurality of stacked DRAM dies are substantially aligned with the second area of the CPU die, and substantially do not overlap the first area of the CPU die. A multi-chip package having a DRAM cache disposed on the substrate and a CPU die disposed on the DRAM cache is also disclosed.
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,
G06F 15/78 - Architectures de calculateurs universels à programmes enregistrés comprenant une seule unité centrale
G11C 11/401 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs utilisant des transistors formant des cellules nécessitant un rafraîchissement ou une régénération de la charge, c. à d. cellules dynamiques
A semiconductor device is disclosed, comprising a substrate having at least one substrate bonding pad. A plurality of semiconductor dies are stacked on the substrate. Each semiconductor die has at least one die bonding pad located on an active surface of the die. A plurality of interposers are each mounted on a corresponding one of the semiconductor dies. Each interposer has an aperture formed therethrough in alignment with the at least one die bonding pad. An electrical connection between the at least one die bonding pad and the at least one substrate bonding pad is formed at least in part by the interposer. The electrical connection includes at least one wire bond.
A semiconductor device comprising (i) internal circuitry for outputting at least one internal clock signal and at least one internal data/control signal for transmission to a next device in a chain of semiconductor devices; (ii) data/control output circuitry for outputting at least one output data/control signal from the at least one internal data/control signal and for releasing the at least one output data/control signal towards the next device via at least one output data/control signal line, the at least one output data/control signal having a first dynamic range; and (iii) clock output circuitry for generating at least one output clock signal from the at least one internal clock signal and for releasing the at least one output clock signal towards the next device via at least one output clock signal line, the at least one output clock signal having a dynamic range different than the first dynamic range.
G11C 11/4074 - Circuits d'alimentation ou de génération de tension, p.ex. générateurs de tension de polarisation, générateurs de tension de substrat, alimentation de secours, circuits de commande d'alimentation
G11C 11/4093 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. mémoires tampon de données
10.
PACKAGE HAVING STACKED MEMORY DIES WITH SERIALLY CONNECTED BUFFER DIES
A multi-chip package has a substrate, and a plurality of memory dies stacked on the substrate. A plurality of buffer dies each has an input and an output. The input of a first buffer die is connectable to an external input. The output of a last buffer die of the plurality of buffer dies is connectable to an external output. Each of the remaining inputs and outputs is connected respectively to an output or an input of another of the plurality of buffer dies to form a serial connection between the plurality of buffer dies. Each of the memory dies is connected to one of the buffer dies, such that each buffer die is connected to its respective memory dies in parallel arrangement. A memory device having multiple serially interconnected MCPs and a controller is also described.
H01L 25/11 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
A mass storage memory module system including a memory module having memory holding members which can be connected to each other, and removably connected to a memory controller. One or more modular memory holding members can be connected to each other to expand the overall storage capacity of the memory module. The presently described expandable memory module does not have a storage capacity limit. A memory holding member includes a plate, a plane, a board and another material having at least one memory device, or, on which at least one memory device is held or to which at least one memory device is mounted.
A dynamic random access memory device is described. A first array has a first plurality of bitlines, each coupled to a column of memory cells. A second has a second plurality of bitlines, each coupled to a column of memory cells. Sense amplifiers are selectively connectable in an open bitline configuration to at least one bitline of the first plurality of bitlines and at least one complementary bitline of the second plurality of bitlines. A voltage supply having a voltage VBL corresponding to a bitline precharge voltage is selectively connectable to each bitline. Logic selectively connects each bitline and the complementary bitline to one of a sense amplifier and the voltage supply during a read operation. Each bitline connected to the sense amplifier is adjacent to a bitline concurrently connected to the voltage supply. A method is also described.
G11C 11/4094 - Circuits de commande ou de gestion de lignes de bits
G11C 11/4091 - Amplificateurs de lecture ou de lecture/rafraîchissement, ou circuits de lecture associés, p.ex. pour la précharge, la compensation ou l'isolation des lignes de bits couplées
G11C 11/4097 - Organisation de lignes de bits, p.ex. configuration de lignes de bits, lignes de bits repliées
A method and system for controlling an MBC configured flash memory device to store date in an SBC storage mode, or a partial MBC storage mode less than a full MBC storage mode capacity. In a full MBC storage mode, pages of data are programmed sequentially from a first page to an Nth page for each physical row of memory cells, where N is the total number of pages than can be stored a physical row. Up to N virtual page addresses per physical row of memory cells accompany each page to be programmed for designating the virtual position of the page in the physical row. For SBC or partial MBC data storage, a flash memory controller issues program command(s) to the MBC memory device using less than the maximum N virtual page addresses for each physical row. The MBC memory device sequentially executes programming operations up to the last received virtual page address for the physical row.
A method and apparatus for mounting microchips (3) into Printed Circuit Boards (PCB) 1 is described. The PCB 1 is provided with a cavity (2) into which the microchip (3) is mounted. Connections (28) are made to signal lines in the PCB 1 and the cavity (2) filled with molding compound (30). In some embodiments one (4) or two (5) inlaid metal layers are thermally connected to microchip (3) to improve thermal conductivity. Thermal panels (8) and (9) or heat sinks (18) and (19) are attached to the inlaid metal layers (4) and (5) to further increase thermal conductivity depending upon the embodiment.
H05K 1/16 - Circuits imprimés comprenant des composants électriques imprimés incorporés, p.ex. une résistance, un condensateur, une inductance imprimés
H05K 3/30 - Assemblage de circuits imprimés avec des composants électriques, p.ex. avec une résistance
15.
VOLTAGE REGULATION FOR 3D PACKAGES AND METHODS OF MANUFACTURING SAME
Disclosed herein are structures and related processes for effectively regulating power among slave chips in a 3D memory multichip package that employs TSVs for interlevel chip connections. The disclosed techniques employ individual voltage regulators on one or more of the slave chips for accurate level control of internal voltages, for example, word line driver voltage (VPP), back bias voltage (VBB), data line voltage (VDL), and bit line pre-charge voltage /cell plate voltage (VBLP/VPL). Employing regulators on one or more of the slave chips not only allows for precise regulation of power levels during typical memory stack operation, but also provides tolerance in small variations in power levels caused, for example, by manufacturing process variations. Moreover, less chip real estate is used as compared to techniques that provide complete power generators on each chip of a multichip stack.
G11C 7/12 - Circuits de commande de lignes de bits, p.ex. circuits d'attaque, de puissance, de tirage vers le haut, d'abaissement, circuits de précharge, circuits d'égalisation, pour lignes de bits
16.
MEMORY SYSTEM WITH A LAYER COMPRISING A DEDICATED REDUNDANCY AREA
Systems and methods are disclosed that may include a first layer comprising a first redundant memory element, an input/output interface, a first layer fuse box, and a fuse blowing control. These systems and methods also may include a second layer coupled to the first layer through a first connection comprising a second layer memory element and a second layer fuse box coupled to the first redundant memory element. In addition, these systems and methods may further include a redundancy register coupled to the first layer, wherein upon the failure of part of the second layer memory element, the redundancy register provides information to the fuse blowing control that allocates part of the first redundant memory element to provide redundancy for the failed part of the second layer memory element by blowing elements in the first layer fuse box and the second layer fuse box.
G11C 29/00 - Vérification du fonctionnement correct des mémoires; Test de mémoires lors d'opération en mode de veille ou hors-ligne
G11C 11/4063 - Circuits auxiliaires, p.ex. pour l'adressage, le décodage, la commande, l'écriture, la lecture ou la synchronisation
G11C 17/16 - Mémoires mortes programmables une seule fois; Mémoires semi-permanentes, p.ex. cartes d'information pouvant être replacées à la main dans lesquelles le contenu est déterminé en établissant, en rompant ou en modifiant sélectivement les liaisons de connexion par une modification définitive de l'état des éléments de couplage, p.ex. mémoires PROM utilisant des liaisons électriquement fusibles
17.
METHOD AND APPARATUS FOR SHARING INTERNAL POWER SUPPLIES IN INTEGRATED CIRCUIT DEVICES
A method, system and apparatus for sharing internal power supplies in integrated circuit devices is described. A multiple device integrated circuit (200) including multiple integrated circuits (202-205) each having internal power supplies is contained in an enclosure (201). Integrated circuits (202-205) are described showing how to make external connection to internal power supplies. Connections (208-212) are provided to the internal power supplies of each of devices (202-205). Another embodiment (500) of the system provides for disablement of regulators in multiple integrated circuits (502), (503), and (504) by another integrated circuit (501) for power consumption reduction. The method includes providing devices and connecting the internal power supplies together. An integrated circuit (501) with a power supply (400) adapted to the system and method with additional circuitry (308), (404) and (402) for disabling a regulator (306) is described.
G11C 11/4074 - Circuits d'alimentation ou de génération de tension, p.ex. générateurs de tension de polarisation, générateurs de tension de substrat, alimentation de secours, circuits de commande d'alimentation
A channel has a first and a second end. The first end of the channel is coupled to a transmitter. The channel is capable of transmitting symbols selected from a symbol set from the first end to the second end. The channel exhibits incomplete error introduction properties. A code comprises a set of code words. The elements of the set of code words are one or more code symbols long. The code symbols are members of the symbol set. The minimum modified Hamming separation between the elements of the set of code words in light of the error introduction properties of the channel is greater than the minimum Hamming distance between the elements of the set of code words. A memory device, a method of using the channel, and a method of generating the code are also described.
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p.ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p.ex. contrôle de parité, exclusion des 9 ou des 11
H03M 13/49 - Détection ou correction d'erreurs unidirectionnelles
19.
METHOD, SYSTEM AND APPARATUS FOR MULTI-LEVEL PROCESSING
A Multi-Level Processor (200) for reducing the cost of synchronization overhead including an upper level processor (201) for taking control and issuing the right to use shared data and to enter critical sections directly to each of a plurality of lower level processors (202, 203...20n) at processor speed. In one embodiment the instruction registers of lower level parallel processors are mapped to the data memory of upper level processor (201). Another embodiment (1300) incorporates three levels of processors. The method includes mapping the instructions of lower level processors into the memory of an upper level processor and controlling the operation of lower level processors. A variant of the method and apparatus facilitates the execution of Single Instruction Multiple Data (SIMD) and single to multiple instruction and multiple data (SI>MIMD). The processor includes the ability to stretch the clock frequency to reduce power consumption.
A circuit and method for programming multiple bits of data to flash memory cells in a single program operation cycle. Multiple pages of data to be programmed into one physical page of a flash memory array are stored in page buffers or other storage means on the memory device. The selected wordline connected to the cells to be programmed is driven with predetermined program profiles at different time intervals, where each predetermined program profile is configured for shifting an erase threshold voltage to a specific threshold voltage corresponding to a specific logic state. A multi-page bitline controller biases each bitline to enable or inhibit programming during each of the time intervals, in response to the combination of specific logic states of the bits belonging to each page of data that are associated with that respective bitline.
A semiconductor device includes a substrate having a plurality of substrate bonding pads disposed on a bonding surface thereof. A plurality of semiconductor dice are stacked on the bonding surface of the substrate to form a die stack. Each die has a plurality of die bonding pads arranged along at least one bonding edge thereof. The remaining edges of each die are non-bonding edges. A plurality of bonding wires each electrically connects one of the die bonding pads to one of the substrate bonding pads. At least one thermally conductive layer is disposed between two adjacent semiconductor dice. At least one thermally conductive lateral portion is in thermal contact with the at least one layer of thermally conductive material. Each thermally conductive lateral portion is arranged along a non-bonding edge of the die stack.
H01L 23/367 - Refroidissement facilité par la forme du dispositif
H01L 23/488 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes formées de structures soudées
Disclosed is a semiconductor device that comprises a plurality of through-silicon vias (TSVs), a signal line and a selective connector for causing the signal line to be either electrically connected to one of the TSVs or electrically isolated from all of the TSVs, based on a control signal. Also disclosed is a semiconductor device with through-silicon vias (TSVs) that comprises a primary TSV group, a plurality of signal lines connected to the primary TSV group, a redundant TSV group and connection circuitry responsive to a control signal having a predetermined value to electrically connect the signal lines to the redundant TSV group.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
H01L 23/488 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes formées de structures soudées
H03K 17/56 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs
H05K 10/00 - Dispositions pour améliorer la sécurité de fonctionnement d'un équipement électronique, p.ex. en prévoyant une unité de réserve similaire
G01R 31/30 - Tests marginaux, p.ex. en faisant varier la tension d'alimentation
23.
SEMICONDUCTOR MEMORY DEVICE WITH SENSE AMPLIFIER AND BITLINE ISOLATION
A semiconductor memory device, including: a memory cell connected to a first bitline and associated with a second bitline; a sense amplifier, including a first input/output node and a second input/output node; and an isolator connected to the bitlines and to the input/output nodes, the isolator being configured to carry out bitline isolation during a refresh operation of the memory cell, where the bitline isolation includes electrically disconnecting the first bitline from the first input/output node and electrically disconnecting the second bitline from the second input/output node, followed by: electrically re-connecting the first bitline to the first input/output node while the second bitline remains electrically disconnected from the second input/output node.
G11C 11/4091 - Amplificateurs de lecture ou de lecture/rafraîchissement, ou circuits de lecture associés, p.ex. pour la précharge, la compensation ou l'isolation des lignes de bits couplées
G11C 11/406 - Organisation ou commande des cycles de rafraîchissement ou de régénération de la charge
G11C 11/4094 - Circuits de commande ou de gestion de lignes de bits
A semiconductor device has a substrate having a first plurality of substrate bonding pads disposed on a bonding surface thereof. A plurality of semiconductor dice is disposed on the substrate. Each die of the plurality of dice has a first plurality of die bonding pads arranged along at least one first edge thereof. A plurality of bonding pillars extends substantially vertically from the substrate bonding pads. Each bonding pillar electrically connects one of the first plurality of substrate bonding pads to a corresponding one of the first plurality of die bonding pads. A method of assembling a semiconductor device is also described.
H01L 23/488 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes formées de structures soudées
A plurality of devices are operated by storing at a device a first ID number received at a first port of the device and a second ID number received at a second port of the device. The device receives a data command through at least one of the first and second ports. The data command has a command ID number. The device executes the data command when at least one of the command ID number is equal to the first ID number when the data command is received at the first port and the command ID number is equal to the second ID number when the data command is received at the second port.
A bridge device, for receiving read data from a first page buffer source and a second buffer source, includes a data buffer, an arbitrator circuit and a controller. The data buffer has a predetermined size for receiving first read data from the first page buffer source and the second read data from the second page buffer source. The arbitrator circuit generates a first read transfer signal when the first page buffer source is ready to provide the first read data, and it inhibits generation of a second read transfer signal when the first page buffer is ready to provide the first read data. The controller issues a data transfer command to the first page buffer source in response to the first read transfer signal for transferring the first read data from the first page buffer source to the data buffer.
A phase change memory is disclosed. The phase change memory has a plurality of block units. The block units are alternately selected. The alternate block unit selection suppresses peak current ground bouncing on sub-wordline and connected ground line through sub-wordline driver transistor. An alternate bitline selection avoids adjacent cell heating interference in the selected block unit.
G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou
G11C 7/00 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique
G11C 7/12 - Circuits de commande de lignes de bits, p.ex. circuits d'attaque, de puissance, de tirage vers le haut, d'abaissement, circuits de précharge, circuits d'égalisation, pour lignes de bits
G11C 7/18 - Organisation de lignes de bits; Disposition de lignes de bits
28.
SERIALLY CONNECTED MEMORY HAVING SUBDIVIDED DATA INTERFACE
A memory system has a controller. A plurality of memory devices are serially interconnected with the controller via an n-bit data interface. The memory system is configurable in a first mode to communicate each read and write operation between the controller and the memory devices using all n bits of the data interface. The memory system is configurable in a second mode to concurrently: communicate data associated with a first operation between the controller and a first target memory device using only m bits of the data interface, where m is less than n; and communicate data associated with a second operation between the controller and a second target memory device using the remaining n-m bits of the data interface. A memory device, a memory controller, and a method are also described.
In a phase change memory, an input data corresponding to a plurality of memory cells is received and a previous data is read from the plurality of memory cells. The input data is compared with the previous data. In the case where the input data is different from the previous data for one or more of the plurality of memory cells and a write count is less than a maximum value, one or more of the plurality of memory cells is programmed with the input data and the write count is updated or incremented. Such operations of data comparison and update of the write count are repeated. If the write count reaches the maximum value, it will be determined that the writing is falied.
G11C 7/00 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique
G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]; Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
30.
STATUS INDICATION IN A SYSTEM HAVING A PLURALITY OF MEMORY DEVICES
Status indication in a system having a plurality of memory devices is disclosed. A memory device in the system includes a plurality of data pins for connection to a data bus. The memory device also includes a status pin for connection to a status line that is independent from the data bus. The memory device also includes first circuitry for generating, upon completion of a memory operation having a first duration, a strobe pulse of a second duration much shorter than the first duration. The strobe pulse provides an indication of the completion of the memory operation. The memory device also includes second circuitry for outputting the strobe pulse onto the status line via the status pin.
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 11/4096 - Circuits de commande ou de gestion d'entrée/sortie [E/S, I/O] de données, p.ex. circuits pour la lecture ou l'écriture, circuits d'attaque d'entrée/sortie ou commutateurs de lignes de bits
G11C 16/06 - Circuits auxiliaires, p.ex. pour l'écriture dans la mémoire
A Phase Change Memory (PCM) having double write drivers. A PCM apparatus includes a memory array having a bitline with a first end and a second end for accessing a PCM cell coupled to the bitline between the first end and the second end of the bitline, a first write driver and a second write driver coupled to the first end of the bitline and the second end of the bitline respectively for simultaneously supplying current to the PCM cell when writing to the PCM cell, and a sense amplifier coupled to the second end of the bitline for sensing a resistance of the PCM cell when reading from the PCM cell. Embodiments of the present invention provide apparatuses, methods, and systems having reduced writing current requirements.
G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou
G11C 7/06 - Amplificateurs de lecture; Circuits associés
G11C 7/12 - Circuits de commande de lignes de bits, p.ex. circuits d'attaque, de puissance, de tirage vers le haut, d'abaissement, circuits de précharge, circuits d'égalisation, pour lignes de bits
A memory system comprises a memory including a plurality of bits arranged as one or more words. Each bit in each word is capable of being programmed either to a particular logical state or to another logical state. A variable data width controller is in communication with the memory. The variable data width controller comprises an adder to determine a programming number of bits in a word to be programmed into a memory. Each bit to be programmed is in the particular logical state. A partitioning block divides the word in to two or more sub-words when the programming number exceeds a maximum number. A switch is in communication with the partitioning block. The switch sequentially provides one or more write pulses. Each write pulse enables a separate communication path between the memory and one of the word and the sub-words.
A three-dimensional memory device includes a stack of semiconductor layers. Phase change memory (PCM) cell arrays are formed on each layer. Each PCM cell includes a variable resistor as storage element, the resistance of which varies. On one layer, formed is peripheral circuitry which includes row and column decoders, sense amplifiers and global column selectors to control operation of the memory. Local bitlines and worldliness are connected to the memory cells. The global column selectors select global bitlines to be connected to local bit lines. The row decoder selects wordlines. Applied current flows through the memory cell connected to the selected local bitline and wordline. In write operation, set current or reset current is applied and the variable resistor of the selected PCM cell stores "data". In read operation, read current is applied and voltage developed across the variable resistor is compared to a reference voltage to provide as read data.
G11C 11/34 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs
G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou
G11C 7/12 - Circuits de commande de lignes de bits, p.ex. circuits d'attaque, de puissance, de tirage vers le haut, d'abaissement, circuits de précharge, circuits d'égalisation, pour lignes de bits
A composite semiconductor memory device, comprising: a plurality of nonvolatile memory devices; and an interface device connected to the plurality of nonvolatile memory devices and for connection to a memory controller, the interface device comprising an error correction coding (ECC) engine. Also, a memory system, comprising: a memory controller; and at least one composite semiconductor memory device configured for being written to and read from by the memory controller and comprising a built-in error correction coding (ECC) engine. Also, a memory system, comprising: a composite semiconductor memory device comprising a plurality of nonvolatile memory devices; and a memory controller connected to the at least one composite semiconductor memory device, for issuing read and write commands to the composite semiconductor memory device to cause data to be written to or read from individual ones of the nonvolatile memory devices; the composite semiconductor memory device providing error-free writing and reading of the data.
A semiconductor device has a plurality of stacked semiconductor dice mounted on a substrate. Each die has similar dimensions. Each die has a first plurality of bonding pads arranged along a bonding edge of the die. A first group of the dice are mounted to the substrate with the bonding edge oriented in a first direction. A second group of the dice are mounted to the substrate with the bonding edge oriented in a second direction opposite the first direction. Each die is laterally offset in the second direction relative to the remaining dice by a respective lateral offset distance such that the bonding pads of each die are not disposed between the substrate and any portion of the remaining dice in a direction perpendicular to the substrate. A plurality of bonding wires connects the bonding pads to the substrate. A method of manufacturing a semiconductor device is also disclosed.
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
H01L 21/58 - Montage des dispositifs à semi-conducteurs sur des supports
H01L 27/10 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive
36.
SEMICONDUCTOR MEMORY DEVICE WITH PLURAL MEMORY DIE AND CONTROLLER DIE
A semiconductor memory device including a plurality of memory die and a controller die. The controller die is connected to an internal control bus. The controller die is configured to provide to a selected one of the memory die an internal read command responsive to an external read command. The selected memory die is configured to provide read data to the controller in response to the internal read command; wherein latency between receipt by the controller die of the external read command and receipt of the read data from the selected memory die differs for at least two of the memory die when selected as the selected memory die.
Through silicon vias (TSVs) in a stacked multi-die integrated circuit package are controlled to assume different connection configurations as desired during field operation of the package in its normal mission mode. TSV connections may be reconfigured to connect an affected die in a manner different from, for example, a factory default connection of that die. TSV connections to the inputs and/or outputs of a die's native circuitry may be changed. A die may be disconnected altogether from an interface that interconnects dice in the stack, or a die that was originally disconnected from such an interface may be connected to the interface.
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
38.
SYSTEM AND METHOD PROVIDING INTEROPERABILITY BETWEEN CELLULAR AND OTHER WIRELESS SYSTEMS
A method and corresponding apparatus for providing a cellular subscriber with access to a WLAN are provided. They involve identifying a multimode mobile terminal, which corresponds to the subscriber and the WLAN from an access request. Based on the identification, the WLAN is authorized to provide the mobile terminal with access. The mobile terminal is then provided with access to the WLAN as a cellular subscriber and enables interoperability between the two networks. For example, the subscriber does not have to supply a credit card to pay for WLAN access directly. Instead, the subscriber pays a cellular network provider, and, in turn, the cellular network provider pays a WLAN provider for the access.
In an integrated circuit (IC) adapted for use in a stack of interconnected ICs, interrupted through-silicon-vias (TSVs) are provided in addition to uninterrupted TSVs. The interrupted TSVs provide signal paths other than common parallel paths between the ICs of the stack. This permits IC identification schemes and other functionalities to be implemented using TSVs, without requiring angular rotation of alternate ICs of the stack.
H01L 23/488 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes formées de structures soudées
H01L 21/71 - Fabrication de parties spécifiques de dispositifs définis en
H01L 21/98 - Assemblage de dispositifs consistant en composants à l'état solide formés dans ou sur un substrat commun; Assemblage de dispositifs à circuit intégré
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
H03K 17/56 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs
G11C 5/06 - Dispositions pour interconnecter électriquement des éléments d'emmagasinage
40.
A BRIDGING DEVICE HAVING A FREQUENCY CONFIGURABLE CLOCK DOMAIN
A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices. A configurable clock controller receives a system clock and generates a memory clock having a frequency that is a predetermined ratio of the system clock. The system clock frequency is dynamically variable between a maximum and a minimum value, and the ratio of the memory clock frequency relative to the system clock frequency is set by loading a frequency register with a Frequency Divide Ratio (FDR) code any time during operation of the composite memory device. In response to the FDR code, the configurable clock controller changes the memory clock frequency.
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 16/06 - Circuits auxiliaires, p.ex. pour l'écriture dans la mémoire
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]; Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
A configurable memory subsystem includes a memory module with a circuit board having a first and a second memory-containing device (MCD) pair mounted thereto. Each MCD pair has a first MCD in communication with a second MCD. Each MCD has an input port, an output port, and a memory each communicating with a bridge. In response to a command, the bridge transfers at least one of a portion of a data packet from the input port to the output port or to the memory, or transfers a portion of a memory packet from the memory to the output port. A loop-back device receives the command and the data packet form the first MCD pair and transmits the command and data packet to the second MCD pair.
A NAND flash memory device is disclosed. The NAND flash memory device includes a NAND flash memory array defined as a plurality of sectors. Row decoding is performed in two levels. The first level is performed that is applicable to all of the sectors. This can be used to select a block, for example. The second level is performed for a particular sector, to select a page within a block in the particular sector, for example. Read and program operations take place to the resolution of a page within a sector, while erase operation takes place to the resolution of a block within a sector.
The present invention discloses a system comprising a stack which includes a first non-volatile memory chip, and a second non-volatile memory chip, the second non- volatile memory chip lacking in at least some non-core circuitries, and a plurality of electrical paths extending between the first non-volatile memory chip and the second non-volatile memory chip, the electrical paths facilitating the first non-volatile memory chip in providing the second non-volatile memory chip with signals and voltages needed for device operations.
In a semiconductor device having a terminal connected to an internal portion, a termination circuit for providing on-die termination for the terminal of the device. The termination circuit comprises a plurality of transistors, including at least one NMOS transistor and at least one PMOS transistor, connected between the terminal and a power supply; and control circuitry for driving a gate of each of NMOS transistor with a corresponding NMOS gate voltage and for driving a gate of each PMOS transistor with a corresponding PMOS gate voltage, the control circuitry being configured to control the NMOS and PMOS gate voltages so as to place the transistors in an ohmic region of operation when on-die termination is enabled. The power supply supplies a voltage that is less than each said NMOS gate voltage and greater than each said PMOS gate voltage.
G11C 5/06 - Dispositions pour interconnecter électriquement des éléments d'emmagasinage
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
45.
SEMICONDUCTOR DEVICE WITH MAIN MEMORY UNIT AND AUXILIARY MEMORY UNIT REQUIRING PRESET OPERATION
A semiconductor device for transferring input data to a non-volatile memory device. The semiconductor device comprises a virtual page buffer including a plurality of data elements; a mask buffer including a corresponding plurality of data elements; control logic circuitry for (i) setting each of the mask buffer data elements to a first logic state upon receipt of a trigger; (ii) causing input data to be written to selected virtual page buffer data elements; and (iii) causing those mask buffer data elements corresponding to the selected virtual page buffer data elements to be set to a different logic state; mask logic circuitry configured to generate masked output data by combining, for each of the virtual page buffer data elements, data read therefrom together with the logic state of the corresponding mask buffer data element; and an output interface configured to release the masked output data towards the non¬ volatile memory device.
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 16/06 - Circuits auxiliaires, p.ex. pour l'écriture dans la mémoire
G11C 7/20 - Circuits d'initialisation de cellules de mémoire, p.ex. à la mise sous ou hors tension, effacement de mémoire, mémoire d'image latente
G11C 8/08 - Circuits de commande de lignes de mots, p.ex. circuits d'attaque, de puissance, de tirage vers le haut, d'abaissement, circuits de précharge, pour lignes de mots
A system including one or more memory devices, and an error detection and correction method are disclosed. A memory device of the system includes an input for receiving a packet. A first portion of the packet may include at least one command byte, and a second portion of the packet may include parity bits to facilitate command error detection. The memory device may include an error manager configured to detect, based on the parity bits, whether an error exists in the at least one command byte, and circuitry configured to provide the packet to the error manager.
G11C 29/52 - Protection du contenu des mémoires; Détection d'erreurs dans le contenu des mémoires
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p.ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p.ex. contrôle de parité, exclusion des 9 ou des 11
47.
SOLID STATE DRIVE OR OTHER STORAGE APPARATUS THAT INCLUDES A PLURALITY OF ENCAPSULATED SEMICONDUCTOR CHIPS
A solid state drive is disclosed. The solid state drive includes a circuit board having opposing first and second surfaces. A plurality of semiconductor chips are attached to the first surface of the circuit board of the solid state drive, and the plurality of semiconductor chips of the solid state drive include at least one memory chip that is at least substantially encapsulated in a resin. An in-line memory module-type form factor circuit board is also disclosed. The in-line memory module-type form factor circuit board has opposing first and second surfaces. A plurality of semiconductor chips are attached to the first surface of the in-line memory module-type form factor circuit board, and these semiconductor chips include at least one memory chip that is at least substantially encapsulated in a resin.
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices. The bridge device has a virtual page buffer corresponding to each discrete memory device for storing read data from the discrete memory device, or write data from an external device. The virtual page buffer is configurable to have a size up to the maximum physical size of the page buffer of a discrete memory device. The page buffer is then logically divided into page segments, where each page segment corresponds in size to the configured virtual page buffer size. By storing read or write data in the virtual page buffer, both the discrete memory device and the external device can operate to provide or receive data at different data rates to maximize the performance of both devices.
A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices. The bridge device has memory organized as banks, where each bank is configured to have a virtual page size that is less than the maximum physical size of the page buffer. Therefore only a segment of data corresponding to the virtual page size stored in the page buffer is transferred to the bank. The virtual page size of the banks is provided in a virtual page size (VPS) configuration command having an ordered structure where the position of VPS data fields containing VPS configuration codes in the command correspond to different banks which are ordered from a least significant bank to a most significant bank. The VPS configuration command is variable in size, and includes only the VPS configuration codes for the highest significant bank being configured and the lower significant banks.
G11C 11/34 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]; Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G11C 8/18 - Circuits de synchronisation ou d'horloge; Génération ou gestion de signaux de commande d'adresse, p.ex. pour des signaux d'échantillonnage d'adresse de ligne [RAS] ou d'échantillonnage d'adresse de colonne [CAS]
A method of data mirroring in a serial-connected memory system between a first and a second memory device. A bypass command is issued to the first memory device, then a write data packet is provided to the first and second memory devices, and then a write data packet command is provided to the first and second memory devices by wherein the write data packet is passed to the second memory device through the first memory device. Mirroring of the write data packet into the first and second memory devices is thereby achieved. ECC (error correction codes) within spare fields provide means for recovering data after failure. The serial- connected memory system is especially useful for implementing SSD (solid-state disk) memory systems.
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 16/06 - Circuits auxiliaires, p.ex. pour l'écriture dans la mémoire
G11C 29/52 - Protection du contenu des mémoires; Détection d'erreurs dans le contenu des mémoires
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]; Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
51.
A COMPOSITE MEMORY HAVING A BRIDGING DEVICE FOR CONNECTING DISCRETE MEMORY DEVICES TO A SYSTEM
A composite memory device including discrete memory devices and a bridge device for controlling the discrete memory devices in response to global memory control signals having a format or protocol that is incompatible with the memory devices. The discrete memory devices can be commercial off-the-shelf memory devices or custom memory devices which respond to native, or local memory control signals. The global and local memory control signals include commands and command signals each having different formats. The composite memory device includes a system in package including the semiconductor dies of the discrete memory devices and the bridge device, or can include a printed circuit board having packaged discrete memory devices and a packaged bridge device mounted thereto.
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 16/06 - Circuits auxiliaires, p.ex. pour l'écriture dans la mémoire
G11C 5/06 - Dispositions pour interconnecter électriquement des éléments d'emmagasinage
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]; Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
52.
SERIAL-CONNECTED MEMORY SYSTEM WITH OUTPUT DELAY ADJUSTMENT
Systems and methods for correcting clock duty cycle and/or performing output delay adjustment are provided for application in serial- connected devices operating as slave devices. A master device provides a clock to the first slave device. Each slave device passes the clock to the next slave device in turn. The last slave device returns the clock to the master device. The master device compares the outgoing and returned clocks and determines if a duty cycle correction and/or an output delay adjustment is needed. If so, the master device generates and outputs commands for slave devices to perform duty cycle and/or output delay adjustment. The slave devices each have a circuit for performing duty cycle correction and/or output delay adjustment. In some implementations, each slave device is a memory device, and the master device is a memory controller.
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]; Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
A method and apparatus used within memory and data processing that reduces the number of references allowed in processor cache by using active rows to reject references that are less frequently used from the cache. Comparators within a memory controller are used to generate a signal indicative of a row hit or miss, which signal is then applied to one or more demultiplexers to enable or disable transfer of a memory reference to processor cache locations. The cache may be level one (L1) or level two (L2) caches including data and or instructions or some combination of L1, L2, data, and instructions.
A mass data storage system, which comprises: a controller for issuing and receiving signals to carry out memory operations; a motherboard comprising at least one first connector and providing signal pathways for establish a ring from the controller via each of the at least one first connector and back to the controller; and at least one non¬ volatile memory module comprising a second connector electrically connected to a chain of non-volatile memory devices, wherein mating of the second connector with a given one of the at least one first connector causes the chain of non- volatile memory devices to be inserted into the ring, thereby to allow the controller to carry out the memory operations on the non- volatile memory devices in the chain.
A reference circuit and method for mitigating switching jitter and delay-locked loop (DLL) using same are provided. The reference circuit and method determine a number of steps of a fine delay line (FDL) that are equivalent to a step of a coarse delay line (CDL). Switching jitter of the DLL is reduced since the delay of the step of the CDL that is switched when on an underflow or overflow condition of the FDL is detected is equivalent to the delay of the provided number of steps of the FDL.
H03K 5/135 - Dispositions ayant une sortie unique et transformant les signaux d'entrée en impulsions délivrées à des intervalles de temps désirés par l'utilisation de signaux de référence de temps, p.ex. des signaux d'horloge
H03K 5/14 - Dispositions ayant une sortie unique et transformant les signaux d'entrée en impulsions délivrées à des intervalles de temps désirés par l'utilisation de lignes à retard
56.
MULTIPLE-BIT PER CELL (MBC) NON-VOLATILE MEMORY APPARATUS AND SYSTEM HAVING POLARITY CONTROL AND METHOD OF PROGRAMMING SAME
A Multiple-bit per Cell (MBC) non-volatile memory apparatus, method, and system wherein a controller for writing/reading data to/from a memory array controls polarity of data by selectively inverting data words to maximize a number of bits to be programmed within (M-1) virtual pages and selectively inverts data words to minimize a number of bits to be programmed in an Mth virtual page where M is the number of bits per cell. A corresponding polarity control flag is set when a data word is inverted. Data is selectively inverted according the corresponding polarity flag when being read from the M virtual pages. A number of the highest threshold voltage programming states in reduced. This provides tighter distribution of programmed cell threshold voltage, reduced power consumption, reduced programming time, and enhanced device reliability.
G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p.ex. de tension, de courant, de phase, de fréquence
G11C 16/10 - Circuits de programmation ou d'entrée de données
G11C 16/26 - Circuits de détection ou de lecture; Circuits de sortie de données
57.
NON-VOLATILE MEMORY DEVICE HAVING CONFIGURABLE PAGE SIZE
A flash memory device having at least one bank, where the each bank has an independently configurable page size. Each bank includes at least two memory planes having corresponding page buffers, where any number and combination of the memory planes are selectively accessed at the same time in response to configuration data and address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank. By selectively adjusting a page size the memory bank, the block size is correspondingly adjusted.
A flash memory device having at least two bank, where the each bank has an independently configurable page size and core controller. The core controller is local to each bank, and governs memory access operations for the bank that include read, program and erase operations. Each core controller controls timing and activation of row circuits, column circuits, voltage generators, and local input/output path circuits for a corresponding memory access operation of the bank. Concurrent operations are executable in multiple banks to improve performance. Each bank has a page size that is configurable with page size configuration data such that only selected wordlines are activated in response to address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank.
A method and system for the selective broadcasting of commands to a subset of a plurality of devices connected in series to a memory controller, where each of the plurality of devices has a unique identification number (ID). The memory controller designates the subset of devices to execute the command, excluding the non-selected devices from executing the command. The memory controller encodes the ID numbers of the designated devices into a single coded address, and sends the command along with the coded address in a packet to the series connected devices. Each device receives the packet in a serial bitstream and decodes the coded address using its ID number in order to determine whether it is selected or not. If the device is selected, the command is executed. Otherwise, the packet is forwarded without executing the command.
Power supplies in flash memory devices are disclosed. A first section of a flash memory device includes non-volatile memory for storing data. A second section of the flash memory device includes at least first and second pumping circuits. The first pumping circuit receives a first voltage and produces, at an output of the first pumping circuit, a second voltage at a second voltage level that is higher than the first voltage level. The second pumping circuit has an input coupled to the first pumping circuit output for cooperatively employing the first pumping circuit to pump up from a voltage greater than the first voltage to produce a third voltage at a third voltage level that is higher than the second voltage level.
Timing constraints on data transfers during access of a NAND flash memory can be relaxed by providing a plurality of data paths that couple the NAND flash memory to a buffer that provides external access to the memory. The buffer defines a bit width associated with the external access, and each of the data paths accommodates that bit width.
Applying an adapted block isolation method to serial-connected memory components may mitigate the effects of leakage current in serial-connected non- volatile memory devices. Responsive to determining that a given memory component is not an intended destination of a command, a plurality of core components of the given memory component may be placed in a low power consumption mode, while maintaining input/output components in an active operational mode. Conveniently, aspects of the disclosed system reduce off current without adding many logic blocks into the memory devices.
A nonvolatile memory having a non-power of two memory capacity is disclosed. The nonvolatile memory device includes at least one plane. The plane includes a plurality of blocks with each of the blocks divided into a number of pages and each of the blocks defined along a first dimension by a first number of memory cells for storing data, and along a second dimension of by a second number of memory cells for storing data. The nonvolatile memory has a non-power of two capacity proportionally related to a total number of memory cells in said plane. The nonvolatile memory also includes a plurality of row decoders. An at least substantially one-to-one relationship exists, in the memory device, for number of row decoders to number of pages. Each of the row decoders is configured to facilitate a read operation on an associated page of the memory device.
H04L 12/28 - Réseaux de données à commutation caractérisés par la configuration des liaisons, p.ex. réseaux locaux [LAN Local Area Networks] ou réseaux étendus [WAN Wide Area Networks]
In a ring-of-clusters network topology, groups of slave devices are accessed in parallel, such that the latency around the ring is proportional to the number of clusters and not proportional to the number of integrated circuits. The devices of a cluster share input and output ring segments such that packets arriving on the input segment are received and interpreted by all the devices in a cluster. In other embodiments, none, some or all but one slaves per cluster are asleep or otherwise disabled so that they do not input and interpret incoming packets. Regardless, in all embodiments, the slaves of a cluster cooperate, potentially under the controller's direction, to ensure that at most one of them is actively driving the output segment at any given time. The devices may be addressed through a device ID, a cluster ID, or a combination thereof. Embodiments of the invention are suited to exploit multi-chip module implementations and forms of vertical circuit stacking.
A NAND flash memory bank having a plurality of bitlines of a memory array connected to a page buffer, where NAND cell strings connected to the same bitline are formed in at least two well sectors. At least one well sector can be selectively coupled to an erase voltage during an erase operation, such that unselected well sectors are inhibited from receiving the erase voltage. When the area of the well sectors decrease, a corresponding decrease in the capacitance of each well sector results. Accordingly, higher speed erasing of the NAND flash memory cells relative to a single well memory bank is obtained when the charge pump circuit drive capacity remains unchanged. Alternately, a constant erase speed corresponding to a single well memory bank is obtained by matching a well segment having a specific area to a charge pump with reduced drive capacity. A reduced drive capacity charge pump will occupy less semiconductor chip area, thereby reducing cost.
A multi-chip device and method of stacking a plurality substantially identical chips to produce the device are provided. The multi-chip device, or circuit, includes at least one through-chip via providing a parallel connection between signal pads from at least two chips, and at least one through-chip via providing a serial or daisy chain connection between signal pads from at least two chips. Common connection signal pads are arranged symmetrically about a center line of the chip with respect to duplicate common signal pads. Input signal pads are symmetrically disposed about the center line of the chip with respect to corresponding output signal pads. The chips in the stack are alternating flipped versions of the substantially identical chip to provide for this arrangement. At least one serial connection is provided between signal pads of stacked and flipped chips when more than two chips are stacked.
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 23/50 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes pour des dispositifs à circuit intégré
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
67.
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE WITH POWER SAVING FEATURE
A non-volatile semiconductor memory device, which comprises (i) an interface having an input for receiving an input clock and a set of data lines for receiving commands issued by a controller including an erase command; (ii) a module having circuit components in a feedback loop configuration and being driven by a reference clock; (iii) a clock control circuit capable of controllably switching between a first state in which the reference clock tracks the input clock and a second state in which the reference clock is decoupled from the input clock; and (iv) a command processing unit configured to recognize the commands and to cause the clock control circuit to switch from the first state to the second state in response to recognizing the erase command. The module consumes less power when the reference clock is decoupled from the input clock than when the reference clock tracks the input clock.
G11C 11/413 - Circuits auxiliaires, p.ex. pour l'adressage, le décodage, la commande, l'écriture, la lecture, la synchronisation ou la réduction de la consommation
G11C 11/4193 - Circuits auxiliaires spécifiques aux types particuliers de dispositifs de stockage à semi-conducteurs, p.ex. pour l'adressage, la commande, la lecture, la synchronisation, l'alimentation, la propagation du signal
G11C 7/20 - Circuits d'initialisation de cellules de mémoire, p.ex. à la mise sous ou hors tension, effacement de mémoire, mémoire d'image latente
A first memory device and second memory device have a same input/output layout configuration. To form a stack, the second memory device is secured to the first memory device. To facilitate connectivity, the second memory device is rotationally offset with respect to the first memory device in the stack to align outputs of the first memory device with corresponding inputs of the second memory device. The rotational offset of the second memory device with respect to the first memory device aligns one or more outputs of the first memory device with one or more respective inputs of the second memory device. Based on links between outputs and inputs from one memory device to another in the stack, the stack of memory devices can include paths facilitating one or more series connection configurations through he memory devices.
G11C 5/02 - Disposition d'éléments d'emmagasinage, p.ex. sous la forme d'une matrice
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
H01L 23/52 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre
H01L 23/535 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions internes, p.ex. structures d'interconnexions enterrées
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
69.
DUAL FUNCTION COMPATIBLE NON-VOLATILE MEMORY DEVICE
A dual function memory device architecture compatible with asynchronous operation and synchronous serial operation. The dual function memory device architecture includes one set of physical ports having two different functional assignments. Coupled between the physical ports and core circuits of the memory device are asynchronous and synchronous input and output signal paths or circuits. The signal paths include shared or dedicated buffers coupled to the ports, asynchronous and synchronous command decoders, a network of switches, and a mode detector. The mode detector determines the operating mode of the dual function memory device from a port, and provides the appropriate switch selection signal. The network of switches routes the input or output signals through the asynchronous or synchronous circuits in response to the switch selection signal. The appropriate command decoder interprets the input signals and provides common control logic with the necessary signals for initiating the corresponding operation.
Each memory cell string in a generic NAND flash cell block connects to a Common Source Line (CLS). A value for applying to the CSL is centrally generated and distributed to a local switch logic unit corresponding to each NAND flash cell block. For source-line page programming, the distribution line may be called a Global Common Source Line (GCSL). In an array of NAND flash cell blocks, only one NAND flash cell block is selected at a time for programming. To reduce power consumption, only the selected NAND flash cell block receives a value on the CSL that is indicative of the value on the GCSL. Additionally, the CSLs of non-selected NAND flash cell blocks may be disabled through an active connection to ground.
A system includes a memory controller and a plurality of semiconductor devices connected in-series. Each device stores data. The controller provides a clock for synchronizing the device operations. Each device includes a phase-locked loop (PLL) selectively enabled or disabled by an enable signal. PLLs of selected devices are enabled by enable signals and the other devices are disabled. The enabled PLL provides a plurality of reproduced clocks with a phase shift of a multiple of 90°. The data transfer is synchronized with at least one of the reproduced clocks. In the devices of disabled PLLs, the data transfer is synchronized with the input clock. The enabled and disabled PLLs cause the devices to be the source and the common synchronous clocking, respectively. The least significant bit of a device identifier assigned to the last device determines clock alignment: edge- or center-aligned clock with data produced by the controller.
H03K 5/135 - Dispositions ayant une sortie unique et transformant les signaux d'entrée en impulsions délivrées à des intervalles de temps désirés par l'utilisation de signaux de référence de temps, p.ex. des signaux d'horloge
G11C 5/02 - Disposition d'éléments d'emmagasinage, p.ex. sous la forme d'une matrice
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]; Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
H03K 5/15 - Dispositions dans lesquelles des impulsions sont délivrées à plusieurs sorties à des instants différents, c. à d. distributeurs d'impulsions
H03L 7/06 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase
72.
SEMICONDUCTOR MEMORY DEVICE SUITABLE FOR INTERCONNECTION IN A RING TOPOLOGY
A semiconductor memory device, which comprises: memory; a plurality of inputs for receiving a command latch enable signal, an address latch enable signal, an information signal and a select signal indicative of whether the memory device has been selected by a controller; a plurality of outputs for releasing a set of output signals towards a next device; control circuitry; and bypass circuitry. When the select signal is indicative of the memory device having been selected by the controller, the control circuitry is configured to interpret the information signal based on the command latch enable signal and the address latch enable signal. When the select signal is indicative of the memory device not having been selected by the controller, the bypass circuitry is configured to transfer the command latch enable signal, the address latch enable signal and the information signal to the outputs of the memory device.
G11C 5/02 - Disposition d'éléments d'emmagasinage, p.ex. sous la forme d'une matrice
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]; Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G11C 8/18 - Circuits de synchronisation ou d'horloge; Génération ou gestion de signaux de commande d'adresse, p.ex. pour des signaux d'échantillonnage d'adresse de ligne [RAS] ou d'échantillonnage d'adresse de colonne [CAS]
A system includes a plurality of devices that are connected in series and a controller that communicates with the devices. Each of the devices has a plurality of input ports and corresponding output ports. The outputs of one device and the inputs of a next device are interconnected. The controller is coupled to the first device and the last device of the series-connection. The controller applies a test pattern to the plurality of input ports at the first device connected in series, by the controller. Each data channel defines a data path between corresponding pairs of input and output ports of the first and last devices. A data channel is enabled if the test pattern is detected at its corresponding output port.
G01R 31/3193 - Matériel de test, c. à d. circuits de traitement de signaux de sortie avec une comparaison entre la réponse effective et la réponse connue en l'absence d'erreur
G01R 31/319 - Matériel de test, c. à d. circuits de traitement de signaux de sortie
G11C 29/08 - Test fonctionnel, p.ex. test lors d'un rafraîchissement, auto-test à la mise sous tension [POST] ou test réparti
74.
METHODS AND SYSTEMS FOR FAILURE ISOLATION AND DATA RECOVERY IN A CONFIGURATION OF SERIES-CONNECTED SEMICONDUCTOR DEVICES
A method of identifying at least one anomalous device in a configuration of series- connected semiconductor devices, comprising: selecting a device in the configuration; sending a command to the selected device, the command for placing the selected device into a recovery mode of operation; attempting to elicit identification data from the selected device while in the recovery mode of operation; if the attempt is successful, selecting a next device in the configuration of series-connected semiconductor devices and repeating the sending and the attempting to elicit; and if the attempt is unsuccessful, concluding that the selected device is an anomalous device. Also, a method of recovering data from a configuration of series-connected semiconductor memory devices having undergone a failure, comprising: placing an operable device of the configuration into a recovery mode of operation; while the operable device is in the recovery mode of operation, retrieving data currently stored by the operable device; and storing the retrieved data in an alternate memory facility.
G11C 29/08 - Test fonctionnel, p.ex. test lors d'un rafraîchissement, auto-test à la mise sous tension [POST] ou test réparti
G06F 11/00 - Détection d'erreurs; Correction d'erreurs; Contrôle de fonctionnement
G06F 11/07 - Réaction à l'apparition d'un défaut, p.ex. tolérance de certains défauts
G06F 11/22 - Détection ou localisation du matériel d'ordinateur défectueux en effectuant des tests pendant les opérations d'attente ou pendant les temps morts, p.ex. essais de mise en route
G11C 29/10 - Algorithmes de test, p.ex. algorithmes par balayage de mémoire [MScan]; Configurations de test, p.ex. configurations en damier
Memory access in data processing is provided using a time-based technique in which memory locations are mapped to respectively corresponding periods of time during which they are made available for access.
G06F 12/00 - Accès à, adressage ou affectation dans des systèmes ou des architectures de mémoires
G06F 13/38 - Transfert d'informations, p.ex. sur un bus
G11C 11/401 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs utilisant des transistors formant des cellules nécessitant un rafraîchissement ou une régénération de la charge, c. à d. cellules dynamiques
G11C 11/406 - Organisation ou commande des cycles de rafraîchissement ou de régénération de la charge
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
An arrangement of memory devices and a controller is based on an interface with a reduced pin count relative to a known memory device and controller arrangement. Facilitating the reduced pin count interface the reduction of multiple strobe signal to a single strobe signal. In addition, a packet header transmitted on the data bus followed by a payload, includes an encoded indication of the type of the payload. Aspects of the present application relate to providing a traditional memory device with external logic devices, where the logic devices handle the single strobe and the packet header, thereby permitting single strobe operation.
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 5/02 - Disposition d'éléments d'emmagasinage, p.ex. sous la forme d'une matrice
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]; Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G11C 8/18 - Circuits de synchronisation ou d'horloge; Génération ou gestion de signaux de commande d'adresse, p.ex. pour des signaux d'échantillonnage d'adresse de ligne [RAS] ou d'échantillonnage d'adresse de colonne [CAS]
77.
INTERLOCK OF READ COLUMN SELECT AND READ DATABUS PRECHARGE CONTROL SIGNALS
A column select and databus precharge signal interlock scheme for a DRAM memory. The signal interlock system includes column read enable circuits associated with each bank of a DRAM memory for generating column select signals for coupling data to a common read databus, and a read databus precharge disable signal for disabling read databus precharge devices. Each column read enable circuit includes pulse generator circuits with tunable components for generating at least one column select signal pulse and the read databus precharge disable pulse in a read operation. The pulse generator circuits ensure that the column select pulse is always nested with respect to the read databus precharge disable pulse. Therefore, there is no overlap between active column select devices and active read databus precharge devices.
G11C 8/08 - Circuits de commande de lignes de mots, p.ex. circuits d'attaque, de puissance, de tirage vers le haut, d'abaissement, circuits de précharge, pour lignes de mots
G11C 11/401 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs utilisant des transistors formant des cellules nécessitant un rafraîchissement ou une régénération de la charge, c. à d. cellules dynamiques
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 7/18 - Organisation de lignes de bits; Disposition de lignes de bits
G11C 8/18 - Circuits de synchronisation ou d'horloge; Génération ou gestion de signaux de commande d'adresse, p.ex. pour des signaux d'échantillonnage d'adresse de ligne [RAS] ou d'échantillonnage d'adresse de colonne [CAS]
78.
AN APPARATUS AND A METHOD OF PRODUCING A BOOSTED VOLTAGE USING A PLURALITY OF CHARGE PUMP CIRCUITS
An apparatus and a method for producing a boosted voltage using a plurality of charge pumps circuits, charge pump control signals and an active capacitive element of an active charge pump, wherein the capacitive element of the activated charge pump is charged in response to the input voltage to the charge pump and the charge pump signal.
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p.ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
G11C 11/4063 - Circuits auxiliaires, p.ex. pour l'adressage, le décodage, la commande, l'écriture, la lecture ou la synchronisation
G11C 7/12 - Circuits de commande de lignes de bits, p.ex. circuits d'attaque, de puissance, de tirage vers le haut, d'abaissement, circuits de précharge, circuits d'égalisation, pour lignes de bits
Daisy-chain memory configuration and usage is disclosed. According to one configuration, a memory system includes a controller and corresponding string of multiple successive memory devices coupled in a daisy-chain manner. The controller communicates commands over the serial control link to configure a first memory device to write a block of data to a second memory device in the chain. For example, the controller initiates copying a block of data by communicating over the daisy-chain control link to configure a first memory device of the multiple memory devices to be a source for outputting data, communicating over the daisy-chain control link to configure a second memory device to be a destination for receiving data, and communicating over the daisy-chain control link to initiate a transfer of the data from the first memory device to the second memory device.
An arrangement of memory devices and a controller is based on an interface with a reduced pin count relative to a known memory device and controller arrangement. Facilitating the reduced pin count interface are some operations performed by the controller. Through repeated transmission, and eventual receipt, of a patterned instruction, the controller determines a width for a Data bus while assigning a target device address to each of the memory devices.
G11C 21/00 - Mémoires numériques dans lesquelles l'information circule
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]; Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
A memory system circuit and method therefor are disclosed. The circuit is adapted to detect a transition in a data timing signal from an indeterminate logic level to a selected one of a high logic level and a low logic level. The circuit includes a comparator having a first input, a second input and an output. The first and second inputs receive the data timing signal and a reference voltage respectively. The output changes logic levels in response to a change in polarity of a voltage difference between the voltage of the timing signal and the reference voltage. The reference voltage is sufficiently closer to the selected one of the logic levels as compared to the other of the logic levels so as to at least substantially prevent potential false positive detections.
H03K 5/1534 - Détecteurs de transition ou de front
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]; Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
In an embodiment, a memory device comprises memory, a first data link, a first input, a second input, a second data link, a first output and a second output. The first data link is configured to input one or more packets into the memory device. The first input is configured to input command strobe signals into the memory device that delineate command packets that are input into the memory device via the first data link. The second input is configured to input data strobe signals into the memory device that delineate data packets that are input into the memory device via the first data link. The first and second outputs are configured to output the command strobe signal and data strobe signal, respectively. The second data link is configured to output packets from the memory device.
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 16/06 - Circuits auxiliaires, p.ex. pour l'écriture dans la mémoire
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]; Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G11C 8/00 - Dispositions pour sélectionner une adresse dans une mémoire numérique
83.
BIAS GENERATOR PROVIDING FOR LOW POWER, SELF-BIASED DELAY ELEMENT AND DELAY LINE
An improved bias generator incorporates a reference voltage and/or a reference current into the generation of bias voltages. In some cases, the output of a biased delay element has a constant voltage swing. A delay line of such constant output voltage swing delay elements may be shown to provide reduced power consumption compared to some known self-biased delay lines. Furthermore, in other cases, careful selection of parameters for providing the reference voltage and/or providing the reference current to a novel bias generator allows a delay line of delay elements biased by such a novel bias generator to show reduced sensitivity to operating conditions, reduced sensitivity to variation in process parameters and improved signal quality, thereby providing more robust operation.
H03K 5/14 - Dispositions ayant une sortie unique et transformant les signaux d'entrée en impulsions délivrées à des intervalles de temps désirés par l'utilisation de lignes à retard
H03L 1/00 - Stabilisation du signal de sortie du générateur contre les variations de valeurs physiques, p.ex. de l'alimentation en énergie
H03L 7/06 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase
84.
DYNAMIC IMPEDANCE CONTROL FOR INPUT/OUTPUT BUFFERS
A system and method of performing off chip drive (OCD) and on-die termination (ODT) are provided A common pull-up network composed of transistors and a common pull-down network composed of transistors are employed to implement both of these functions. In drive mode, the pull-up network is configured to produce a calibrated drive impedance when an 'on' output is to be generated, and the pull-down network is configured to produce a calibrated drive impedance when an 'off' output is to be generated. In termination mode, the pull- up network and the pull-down network are configured to produce a calibrated pull-up resistance and pull-down resistance, respectively, such that together they form a split termination.
G11C 11/407 - Circuits auxiliaires, p.ex. pour l'adressage, le décodage, la commande, l'écriture, la lecture ou la synchronisation pour des cellules de mémoire du type à effet de champ
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 7/12 - Circuits de commande de lignes de bits, p.ex. circuits d'attaque, de puissance, de tirage vers le haut, d'abaissement, circuits de précharge, circuits d'égalisation, pour lignes de bits
H03K 19/0175 - Dispositions pour le couplage; Dispositions pour l'interface
An access buffer, such as page buffer, for writing to non-volatile memory, such as Flash, using a two-stage MLC (multi-level cell) operation is provided. The access buffer has a first latch for temporarily storing the data to be written. A second latch is provided for reading data from the memory as part of the two-stage write operation. The second latch has an inverter that participates in the latching function when reading from the memory. The same inverter is used to produce a complement of an input signal being written to the first latch with the result that a double ended input is used to write to the first latch.
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 11/40 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs utilisant des transistors
G11C 11/41 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs utilisant des transistors formant des cellules avec réaction positive, c. à d. des cellules ne nécessitant pas de rafraîchissement ou de régénération de la charge, p.ex. multivibrateur bistable, déclencheur de Schmitt
G11C 11/413 - Circuits auxiliaires, p.ex. pour l'adressage, le décodage, la commande, l'écriture, la lecture, la synchronisation ou la réduction de la consommation
G11C 7/12 - Circuits de commande de lignes de bits, p.ex. circuits d'attaque, de puissance, de tirage vers le haut, d'abaissement, circuits de précharge, circuits d'égalisation, pour lignes de bits
86.
A BUFFER COMPRISING A VOLTAGE LEVEL SHIFTING CIRCUIT
A voltage level shifter with an input transistor pair, a cross-coupled load chain transistor pair and a pair of current sources, effects reduced power consumption through the use of the cross-coupled load chain transistor pair to minimize the DC current component present in known voltage level shifters. In specific embodiments, feedback elements may be used to minimize delays in signal transitions. A reference voltage that corresponds to a current capability of the input transistor pair may be used to regulate the current sources in the load chain. Changes in a swing of the input signal voltage received by the input transistor pair may be reflected in corresponding changes to the reference voltage. The voltage level shifter may be of particular use in a buffer.
H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
A method and system for increasing the lifespan of a flash memory device by selectively erasing sub-blocks of a memory block. Each physical memory block of the flash memory device is dividable into at least two logical sub-blocks, where each of the at least two logical sub-blocks is erasable. Therefore, only the data of the logical sub-block is erased and reprogrammed while unmodified data in the other logical sub-block avoids unnecessary program/erase cycles. The logical sub-blocks to be erased are dynamically configurable in size and location within the block. A wear leveling algorithm is used for distributing data throughout the physical and logical sub-blocks of the memory array to maximize the lifespan of the physical blocks during programming and data modification operations.
G11C 16/16 - Circuits pour effacer électriquement, p.ex. circuits de commutation de la tension d'effacement pour effacer des blocs, p.ex. des réseaux, des mots, des groupes
Circuits and methods are provided for controlling multi-page erase operations in flash memory. The page address of each address of a multi-page erase operation is latched in wordline decoders. A page select reset generator circuit processes the block addresses of each address of the multi-page erase operation. In the event the addresses relate to pages in different blocks, then previously latched page addresses are reset. This avoids the incorrect circuit operation that will result should a multi-page erase operation include multiple pages in different blocks.
G11C 8/12 - Circuits de sélection de groupe, p.ex. pour la sélection d'un bloc de mémoire, la sélection d'une puce, la sélection d'un réseau de cellules
G11C 7/24 - Circuits de protection ou de sécurité pour cellules de mémoire, p.ex. dispositions pour empêcher la lecture ou l'écriture par inadvertance; Cellules d'état; Cellules de test
G11C 8/20 - Circuits de sécurité ou de protection d'adresse, c. à d. dispositions pour empêcher un accès non autorisé ou accidentel
89.
APPARATUS AND METHOD OF PAGE PROGRAM OPERATION FOR MEMORY DEVICES WITH MIRROR BACK-UP OF DATA
An apparatus and method of page program operation is provided. When performing a page program operation with a selected memory device, a memory controller loads the data into the page buffer of one selected memory device and also into the page buffer of another selected memory device in order to store a back-up copy of the data. In the event that the data is not successfully programmed into the memory cells of the one selected memory device, then the memory controller recovers the data from the page buffer of the other memory device. Since a copy of the data is stored in the page buffer of the other memory device, the memory controller does not need to locally store the data in its data storage elements.
G11C 7/24 - Circuits de protection ou de sécurité pour cellules de mémoire, p.ex. dispositions pour empêcher la lecture ou l'écriture par inadvertance; Cellules d'état; Cellules de test
G11C 19/00 - Mémoires numériques dans lesquelles l'information est déplacée par échelons, p.ex. registres à décalage
90.
SYSTEM AND METHOD OF PAGE BUFFER OPERATION FOR MEMORY DEVICES
Systems and methods are provided for using page buffers of memory devices connected to a memory controller through a common bus. A page buffer of a memory device is used as a temporary cache for data which is written to the memory cells of the memory device. This can allow the memory controller to use memory devices as temporary caches so that the memory controller can free up space in its own memory.
An apparatus and method are provided for using a page buffer of a memory device as a temporary cache for data. A memory controller writes data to the page buffer and later reads out the data without programming the data into the memory cells of the memory device. This allows the memory controller to use the page buffer as temporary cache so that the data does not have to occupy space within the memory controller's local data storage elements. Therefore, the memory controller can use the space in its own storage elements for other operations.
A system includes a plurality of memory devices connected in-series that communicate with a memory controller. A memory device designated by an ID number performs operations at a normal power consumption level. The other devices not designated perform signal forwarding operations at a reduced power consumption level. The designated memory device enables its internal clock generator to generate all clocks necessary for operations. The non-designated memory devices generate clocks to perform partial operations for forwarding commands to next memory devices. In another example, memory devices do not forward the input command to the next memory device when there is no ID match. In another example, a memory device transmits the command replacing the content thereof with a static output when there is an ID match. Such partial clock generation, non-forwarding of commands and replacing the command contents will cause the system to operate at the reduced power consumption level.
G11C 19/00 - Mémoires numériques dans lesquelles l'information est déplacée par échelons, p.ex. registres à décalage
G11C 8/12 - Circuits de sélection de groupe, p.ex. pour la sélection d'un bloc de mémoire, la sélection d'une puce, la sélection d'un réseau de cellules
93.
NON-VOLATILE SEMICONDUCTOR MEMORY HAVING MULTIPLE EXTERNAL POWER SUPPLIES
A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.
A method and system for extending the life span of a flash memory device. The flash memory device is dynamically configurable to store data in the single bit per cell (SBC) storage mode or the multiple bit per cell (MBC) mode, such that both SBC data and MBC data co-exist within the same memory array. One or more tag bits stored in each page of the memory is used to indicate the type of storage mode used for storing the data in the corresponding subdivision, where a subdivision can be a bank, block or page. A controller monitors the number of program-erase cycles corresponding to each page for selectively changing the storage mode in order to maximize lifespan of any subdivision of the multi-mode flash memory device.
G06F 9/06 - Dispositions pour la commande par programme, p.ex. unités de commande utilisant des programmes stockés, c. à d. utilisant un moyen de stockage interne à l'équipement de traitement de données pour recevoir ou conserver les programmes
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
A system having serially connected memory devices in a ring topology organization to realize high speed performance. The memory devices have dynamically configurable data widths such that the system can operate with up to a maximum common number of active data pads to maximize performance, or to operate with a single active data pad to minimize power consumption. Therefore the system can include a mix of memory devices having different data widths. The memory devices are dynamically configurable through the issuance of a single command propagated serially through all the memory devices from the memory controller in a broadcast operation. Robust operation of the system is ensured by implementing a data output inhibit algorithm, which prevents valid data from being provided to the memory controller when read output control signal is received out of its proper sequence.
A system includes a plurality of memory devices connected in-series that communicate with a memory controller. When a memory device receives a command strobe signal indicating the start of a command having an ID number, the memory device is placed in a de-selected state and the ID number is compared to the memory device's device address. Delayed versions of the command strobe signal and the command are forwarded while the memory device is in the de-selected state. If the ID number matches the device address with reference to the ID number, the memory device is placed in a selected state. In the selected state, the memory device may refrain from forwarding the delayed versions of the command strobe signal and the command, such that if there is a match, a truncated part of the command is forwarded before the memory device is placed in the selected state.
G11C 8/18 - Circuits de synchronisation ou d'horloge; Génération ou gestion de signaux de commande d'adresse, p.ex. pour des signaux d'échantillonnage d'adresse de ligne [RAS] ou d'échantillonnage d'adresse de colonne [CAS]
G06F 1/04 - Génération ou distribution de signaux d'horloge ou de signaux dérivés directement de ceux-ci
G11C 11/34 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs
G11C 19/00 - Mémoires numériques dans lesquelles l'information est déplacée par échelons, p.ex. registres à décalage
G11C 8/12 - Circuits de sélection de groupe, p.ex. pour la sélection d'un bloc de mémoire, la sélection d'une puce, la sélection d'un réseau de cellules
A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.
H03K 17/296 - Modifications pour permettre un choix d'intervalles de temps pour exécuter plusieurs opérations de commutation et arrêtant automatiquement leur fonctionnement lorsque le programme est terminé
G11C 11/34 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs
G11C 7/06 - Amplificateurs de lecture; Circuits associés
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]; Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
H03K 5/13 - Dispositions ayant une sortie unique et transformant les signaux d'entrée en impulsions délivrées à des intervalles de temps désirés
H03L 7/06 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase
98.
SIMPLIFIED BIAS CIRCUITRY FOR DIFFERENTIAL BUFFER STAGE WITH SYMMETRIC LOADS
A biasing circuit for biasing differential delay elements is provided. The circuit is a feedback-free circuit consisting of a CMOS output stage having a P-type transistor and an N-type transistor, with a diode connected transistor between the P- type transistor and the N-type transistor, the output stage receiving the control voltage as input, and producing the Vnb蹡as between the P-type transistor and the diode connected transistor. The circuit is simpler than conventional biasing circuits that employ feedback and operational amplifiers.
H03K 5/13 - Dispositions ayant une sortie unique et transformant les signaux d'entrée en impulsions délivrées à des intervalles de temps désirés
H03L 7/085 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence y compris le filtrage ou l'amplification de son signal de sortie
H03L 7/089 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence y compris le filtrage ou l'amplification de son signal de sortie le détecteur de phase ou de fréquence engendrant des impulsions d'augmentation ou de diminution
99.
SOURCE SIDE ASYMMETRICAL PRECHARGE PROGRAMMING SCHEME
A method for programming NAND flash cells to minimize program stress while allowing for random page programming operations. The method includes asymmetrically precharging a NAND string from a positively biased source line while the bitline is decoupled from the NAND string, followed by the application of a programming voltage to the selected memory cell, and then followed by the application of bitline data. After asymmetrical precharging and application of the programming voltage, all the selected memory cells will be set to a program inhibit state as they will be decoupled from the other memory cells in their respective NAND strings, and their channels will be locally boosted to a voltage effective for inhibiting programming. A VSS biased bitline will discharge the locally boosted channel to VSS, thereby allowing programming of the selected memory cell to occur. A VDD biased bitline will have no effect on the precharged NAND string, thereby maintaining a program inhibited state of that selected memory cell.
G11C 7/18 - Organisation de lignes de bits; Disposition de lignes de bits
G11C 8/12 - Circuits de sélection de groupe, p.ex. pour la sélection d'un bloc de mémoire, la sélection d'une puce, la sélection d'un réseau de cellules
The disclosure relates to phase shifting in Delay Locked Loops (DLLs) and Phase-Locked Loops (PLLs). A charge pump in the DLL or PLL includes a capacitor connected in parallel to an output node. A primary current switching circuit charges the capacitor with a source current and discharges the capacitor with a sink current. A supplemental source circuit sources a positive phase shift producing current which has a range of magnitudes. A magnitude of the positive phase shift producing current is determined by at least one source selection signal. A supplemental sink circuit for sources a negative phase shift producing current which has a range of magnitudes. A magnitude of the negative phase shift producing current is determined by at least one sink selection signal.
H03L 7/08 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase
H03L 7/089 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence y compris le filtrage ou l'amplification de son signal de sortie le détecteur de phase ou de fréquence engendrant des impulsions d'augmentation ou de diminution
H03K 5/134 - Dispositions ayant une sortie unique et transformant les signaux d'entrée en impulsions délivrées à des intervalles de temps désirés utilisant une chaîne de dispositifs actifs de retard avec des transistors à effet de champ
H03L 7/099 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
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