A system and a method for volume inspection of semiconductor wafers with increased throughput are configured for milling and imaging a reduced number or areas of appropriate cross-sections surfaces in an inspection volume and determining inspection parameters of the 3D objects from the cross-section surface images. The method and device can be utilized for quantitative metrology, defect detection, process monitoring, defect review, and inspection of integrated circuits within semiconductor wafers.
G01N 23/2206 - Combinaison de plusieurs mesures, l'une au moins étant celle d’une émission secondaire, p.ex. combinaison d’une mesure d’électrons secondaires [ES] et d’électrons rétrodiffusés [ER]
G01N 23/2255 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’ions incidents, p.ex. des faisceaux de protons
2.
METHOD AND APPARATUS FOR PRODUCING AT LEAST ONE HOLLOW STRUCTURE, MIRROR, EUV LITHOGRAPHY SYSTEM, FLUID FEED APPARATUS AND METHOD FOR FEEDING A FLUID
A hollow structure (28) is produced in a workpiece (25) to form a substrate for a mirror through material-removing processing with pulsed laser radiation (35). The pulsed laser radiation is focused into a focal region (39), forming a removal front (46) for the areal removal of material of the workpiece (25) by moving the focal region (39) along a movement pattern (41), and producing the hollow structure (28) by moving the removal front (46) within the workpiece (25). The removal front is not aligned perpendicular to an incoming radiation direction (Z) of the pulsed laser radiation (35) at the radiation entrance side (27) of the workpiece at least intermittently during the production. The hollow structure is produced in the form of a channel through which a fluid is able to flow.
B23K 26/55 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour créer des vides dans la pièce à travailler, p.ex. pour former des passages ou des configurations de flux
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
3.
3D VOLUME INSPECTION OF SEMICONDUCTOR WAFERS WITH INCREASED ACCURACY
A system and a method for volume inspection of semiconductor wafers are configured for milling and imaging of reduced number or areas of appropriate cross-sections surfaces in an inspection volume and determining inspection parameters of the 3D objects from the cross-section surface images. The system and method can be utilized for quantitative metrology, defect detection, process monitoring, defect review, and inspection of integrated circuits within semiconductor wafers.
G06T 7/55 - Récupération de la profondeur ou de la forme à partir de plusieurs images
G01N 1/28 - Préparation d'échantillons pour l'analyse
G01N 23/203 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux en mesurant la rétrodiffusion
G01N 23/2206 - Combinaison de plusieurs mesures, l'une au moins étant celle d’une émission secondaire, p.ex. combinaison d’une mesure d’électrons secondaires [ES] et d’électrons rétrodiffusés [ER]
The invention relates to a method for irradiating a lithographic object (14, 40, 50), in which the lithographic object (14, 40, 50) is coated with a lacquer layer (20). The irradiation properties of the lacquer are determined in a spatially resolved manner. According to the irradiation properties determined for a first surface region of the lithographic object (14, 40, 50), an irradiation device (21, 52) is set to a first irradiation state in order to irradiate the first surface region. According to the irradiation properties determined for a second surface region of the lithographic object (14, 40, 50), the irradiation device (21, 52) is set to a second irradiation state in order to irradiate the second surface region. The lithographic object (14, 40, 50) is irradiated by guiding a spot, which is generated using an irradiation beam path (23), along a specified path over the lithographic object (14, 40, 50) in order to generate an irradiation track (25) in the lacquer layer (20). The invention also relates to a system for irradiating a lithographic object (14, 40, 50).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
5.
METHOD FOR CALIBRATING A MANIPULABLE OPTICAL MODULE
A method for calibrating a manipulable optical module for a microlithographic projection exposure apparatus, which comprises at least one manipulation element for setting an at least one-dimensional local variation profile of an optical property of the optical module is provided. The method comprises: applying a temporally varying excitation signal to the at least one manipulation element; determining a raw measurement data set via a measurement device measuring the respective local variation profile resulting at different times during the variation of the excitation signal; estimating a temporally varying scaling, caused by the temporal variation of the excitation signal, in the variation profiles of the raw measurement data set; determining a full effect profile of the optical property by fitting the temporally varying scaling to the variation profiles of the raw measurement data set; and determining calibration data of the manipulable optical module on the basis of the full effect profile.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
6.
METHOD FOR OPTIMIZING A PUPIL STOP SHAPE FOR SIMULATING ILLUMINATION AND IMAGING PROPERTIES OF AN OPTICAL PRODUCTION SYSTEM DURING THE ILLUMINATION AND IMAGING OF AN OBJECT BY MEANS OF AN OPTICAL MEASUREMENT SYSTEM
In order to simulate properties of an optical production system, use is made of an optical measurement system comprising an illumination optical unit for an object to be imaged having a pupil stop in the region of an illumination pupil and an imaging optical unit for imaging the object. In order to optimize a pupil stop shape of the pupil stop, firstly a starting stop shape of the pupil stop is predefined as an initial design candidate for the simulation. The starting stop shape is modified and at least one fabrication boundary condition of the corresponding modification stop shape is checked. The steps “modifying” and “checking” are repeated until the checking reveals compliance with the boundary conditions. A match quality between the properties of the optical production system and those of the optical measurement system is determined and the steps “modifying”, “checking” and “determining” are repeated until the match quality attains a predefined optimization criterion, which is queried. A target stop shape resulting from the target stop shape that occurred with the smallest merit function value E in the optimization is fabricated as an optimized pupil stop shape after attaining the optimization criterion. This results in simulation—as free of deviations as possible—of the illumination and imaging properties of the optical production system during the illumination and imaging of the object by use of the optical measurement system.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a projection objective of a microlithographic projection exposure system, having a plurality of EUV mirrors (20) by means of which a reticle (13) is imaged in an image plane (21). A heating device (24) comprises a radiation source (28) for issuing a heating radiation (31). The heating radiation (31) is guided to a surface (32) of the EUV mirror (20). The radiation source (28) comprises a plurality of radiation elements (34) formed in a semiconductor substrate (33). Heating radiation emitted from the radiation elements (34) is guided onto the surface (32) of the EUV mirror (20) through a multi-lens array (35). The invention also relates to a method for heating an EUV mirror (20).
H01L 27/15 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des composants semi-conducteurs avec au moins une barrière de potentiel ou une barrière de surface, spécialement adaptés pour l'émission de lumière
8.
APPARATUS AND METHOD FOR AVOIDING A DEGRADATION OF AN OPTICAL USED SURFACE OF A MIRROR MODULE, PROJECTION SYSTEM, ILLUMINATION SYSTEM AND PROJECTION EXPOSURE APPARATUS
Mirror module for a projection exposure apparatus that includes an optical used surface, an optical measurement surface, a measurement apparatus for determining the degradation state of the measurement surface, characterized in that: the mirror module comprises a temperature control apparatus configured such that the temperature of the optical measurement surface is lower than the temperature of the optical used surface.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
9.
CONTROL DEVICE, OPTICAL SYSTEM, LITHOGRAPHY INSTALLATION AND METHOD
The invention relates to a control device (100) for controlling an actuator (200) for actuating an optical element (310) of an optical system (300), having a control unit (110) which is designed to provide a control voltage (A) for controlling the actuator (200) depending on a provided control signal (S), and a control unit (120) which is designed to provide the control signal (S) depending on a target position signal (P) for setting a position of the optical element (310) and on a correction signal (K) which depends on a determined impedance (Z) of the actuator (200).
G02B 7/185 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs avec des moyens pour régler la forme de la surface du miroir
H02N 2/06 - Circuits d'entraînement; Dispositions pour la commande
10.
METHOD AND APPARATUS FOR CALIBRATING AN OPERATION ON A PHOTOMASK
The present invention relates to a method and an apparatus for calibrating an operation on a mask. A method for producing correction marks on an object for lithography, in particular for calibrating an operation, using a particle beam includes: (a.) producing a first group of correction marks; and (b.) producing a second group of correction marks; (c.) wherein the separations of the correction marks within the first and within the second group are smaller than the separations between correction marks from the first group and correction marks from the second group.
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p.ex. réparation ou correction de défauts par un faisceau d'ions focalisé
G03F 1/44 - Aspects liés au test ou à la mesure, p.ex. motifs de grille, contrôleurs de focus, échelles en dents de scie ou échelles à encoches
A system and a method for measuring of parameter values of semiconductor objects within wafers with increased throughput include using a modified machine learning algorithm to extract measurement results from instances of semiconductor objects. A training method for training the modified machine learning algorithm includes reducing a user interaction. The method can be more flexible and robust and can involve less user interaction than conventional methods. The system and method can be used for quantitative metrology of integrated circuits within semiconductor wafers.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
12.
METHODS AND APPARATUSES FOR PROCESSING A LITHOGRAPHIC OBJECT
The present invention relates to methods and apparatuses for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object. In addition, the present invention relates to computer programs for controlling such apparatuses to perform such methods.
The present invention relates to methods and apparatuses for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object. In addition, the present invention relates to computer programs for controlling such apparatuses to perform such methods.
A method for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object, comprises the following steps: (a.) dividing the working region into a set of partial regions, and (b.) positioning a first quantity of first reference markings over the working region so that the first quantity of first reference markings lie within the working region.
The present invention relates to methods and apparatuses for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object. In addition, the present invention relates to computer programs for controlling such apparatuses to perform such methods.
A method for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object, comprises the following steps: (a.) dividing the working region into a set of partial regions, and (b.) positioning a first quantity of first reference markings over the working region so that the first quantity of first reference markings lie within the working region.
A further method for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object, comprises the following steps: (a.) assigning at least one reference marking from a first quantity of first reference markings, which are distributed over the working region and lie within the working region, to at least one partial region from a set of partial regions into which the working region is divided, and (b.) performing the examination and/or processing of the object in the at least one partial region while taking into account the position of the assigned at least one reference marking.
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p.ex. réparation ou correction de défauts par un faisceau d'ions focalisé
G03F 1/42 - Aspects liés à l'alignement ou au cadrage, p.ex. marquages d'alignement sur le substrat du masque
H01J 37/302 - Commande des tubes par une information d'origine externe, p.ex. commande par programme
13.
DEVICE AND METHOD FOR MEASURING A COMPONENT, AND LITHOGRAPHY SYSTEM
The invention relates to a device (1) for measuring a component (2), in particular an optical component (2) of a lithography system, having at least one vibration isolator device (3), a measuring system (4) mounted on the at least one vibration isolator device (3) and a supply device (5) for supplying the measuring system (4) at least via – a data connection (6) for transferring data between the supply device (5) and the measuring system (4) and/or – a current connection (7) for transferring electrical energy between the supply device (5) and the measuring system (4) and/or – a gas connection (8) for transferring at least one gas between the supply device (5) and the measuring system (4) and/or – a liquid connection (9) for transferring at least one liquid between the supply device (5) and the measuring system (4) and/or – a vacuum connection (10) for transferring a vacuum between the supply device (5) and the measuring system (5). According to the invention, a decoupling device (11) is provided and is configured to mechanically at least partially decouple the measuring system (4) from the supply device (5) at least during the measuring of the component (2).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
14.
MEASURING MODULE FOR DETERMINING THE POSITION OF A COMPONENT IN AN OPTICAL SYSTEM FOR MICROLITHOGRAPHY
The invention relates to a measuring module (10) for determining the position of a component (126) in an optical system (100) for microlithography, comprising a first optical resonator (18-1) for measuring a distance by irradiating a first measuring target (16-1) paired with the component with a first measuring beam (28-1) and a second optical resonator (18-2) for measuring a distance by irradiating a second measuring target (16-2) paired with the component with a second measuring beam (28-2). The optical resonators (18-1, 18-2) are configured so as to emit the two measuring beams onto the corresponding measuring target (16-1, 16-2) from different directions.
G01B 9/02001 - Interféromètres caractérisés par la commande ou la génération des propriétés intrinsèques du rayonnement
G01B 11/14 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la distance ou la marge entre des objets ou des ouvertures espacés
15.
ADAPTIVE OPTICAL ELEMENT HAVING AN INSERTION ELEMENT
The invention relates to an adaptive optical element (100) for a microlithographic projection exposure apparatus (600, 700), having a substrate (101), having an optically effective surface (102) and having at least one solid-state actuator (103) for at least partial deflection or deformation of the optically effective surface (102). At least one drilled hole (104) extends through at least part of the substrate (101). An insertion element (105) comprising the at least one solid-state actuator (103) is present. The insertion element (105) is accommodated in the drilled hole (104) and designed such that the at least one solid-state actuator (103) is arranged and affixed at a specified position within the drilled hole (104).
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
An electron microscope serves for examining a specimen. An electron optical unit serves for passing an image of a specimen region of interest to a detection device. A removal device serves for removing material from the specimen, in the specimen region of interest, in preparation for imaging of the specimen region. A stop serves for separating the specimen region of interest from a specimen environment. The result is an electron microscope in which undesired effects of the removal device on the specimen to be examined are reduced.
G01N 23/2202 - Préparation d’échantillons à cet effet
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
17.
METHOD FOR DEPOSITING A COVER LAYER, EUV LITHOGRAPHY SYSTEM AND OPTICAL ELEMENT
A method of depositing a cover layer onto an optical element (M1) for reflection of EUV radiation. In the method, a cover layer containing phosphorus (P) is deposited onto the optical element (M1). The optical element (M1) in the course of deposition of the cover layer (35) is disposed in an interior (39) of a housing (36) of an EUV lithography system, and, for the deposition of the cover layer, phosphorus (P) is released from at least one phosphorus source (42, 43) disposed outside the interior (39) or within the interior (39). Also disclosed are an EUV lithography system and an optical element (M1) for reflecting EUV radiation.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A method of preparing a sample for charged particle beam inspecting is provided. The method comprises providing a semiconductor structure sample and identifying electrically isolated regions in an area of the sample to be examined. The method further comprises providing an electrical connection to the at least one electrically isolated region.
A sensor arrangement for arrangement on a measurement chamber, wherein the sensor arrangement comprises: a sensor; an intake opening; an outlet; and a fluid connection between the intake opening and the outlet.
A method for checking an interface for the wired transmission of electrical signals to an electronics unit, arranged in a vacuum-tight housing, of an optics module comprises: a) coupling a first bundle of the interface to the electronics unit; b) connecting a test device to a free end of the first bundle; c) applying an electrical test signal generated by the test device to a specific pair of electrical lines of the first bundle; d) acquiring an electrical response signal from the specific pair of electrical lines; e) comparing the acquired response signal with a response signal predetermined for the specific pair, and f) determining whether a defect is present in one of the electrical lines of the pair on the basis of the comparison.
G01R 31/58 - Test de lignes, de câbles ou de conducteurs
G01R 27/16 - Mesure de l'impédance d'un élément ou d'un réseau dans lequel passe un courant provenant d'une autre source, p.ex. câble, ligne de transport de l'énergie
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
21.
OPTICAL SYSTEM, TEST DEVICE, LITHOGRAPHY APPARATUS, ARRANGEMENT AND METHOD
An optical system comprises a number of optics modules, wherein the respective optics module comprises: a number of displaceable optical elements for guiding radiation in the optical system; a number of actuator/sensor devices, wherein at least one of the actuator/sensor devices is assigned to the respective optical element, wherein the respective actuator/sensor device is configured to displace the assigned optical element and/or to acquire a position of the assigned optical element; a vacuum-tight housing; and an electronics unit in the vacuum-tight housing and configured to actuate the respective actuator/sensor device on the basis of received actuation data, wherein the electronics unit has a first electronics region containing a number of electrical and/or electronic component parts and that generates, and a second electronics region containing a number of electrical and/or electronic component parts.
G01R 31/28 - Test de circuits électroniques, p.ex. à l'aide d'un traceur de signaux
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
22.
DEVICE AND METHOD FOR HEATING A MIRROR, ASSEMBLY COMPOSED OF A HEATING DEVICE AND AN EUV MIRROR, PROJECTION LENS OF A MICROLITHOGRAPHIC PROJECTION PRINTING SYSTEM
The invention relates to a heating device for a mirror (20) of a microlithographic projection printing system, comprising a radiation source (28) for emitting heating radiation. The heating radiation is directed in a plurality of heating channels (31, 32, 33) onto a surface of the mirror (20). The heating radiation in the first heating channel (31) is directed onto a first surface region (34) of the mirror (20); the heating radiation in the second heating channel (32) is directed onto a second surface region (35) of the mirror. The heating device has an operating mode in which a portion of the heating radiation in the first heating channel (31) is directed onto the second surface region (35). The proportion of the heating radiation in the first heating channel (31) that is directed onto the second surface region (35) is adjustable.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
23.
METHOD AND SYSTEMS FOR BALANCING CHARGES ON A SURFACE OF AN OBJECT COMPRISING INTEGRATED CIRCUIT PATTERNS IN A SCANNING ELECTRON MICROSCOPE
The invention relates to a method (22) for balancing charges on a surface (32) of an object (64) comprising integrated circuit patterns in a scanning electron microscope (27, 27'), the method (22) comprising: scanning an area (34) on the surface (32) of the object (64) with a first electron beam with a first landing energy one or more times to generate a scanning electron microscopy image of the area (34) and subsequently scanning the area (34) on the surface (32) of the object (64) with a second electron beam with a second landing energy one or more times such that the charges accumulated on the surface (32) of the object (34) are at least partially balanced. The invention also relates to scanning electron microscopes (27, 27') with a single or dual beam column setup for imaging and erasing the accumulated charges.
H01J 37/244 - Détecteurs; Composants ou circuits associés
H01J 37/26 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
G01N 23/225 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériau; Moyens de réglage de diaphragmes ou de lentilles associées au support
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
24.
ADAPTIVE OPTICAL MODULE FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
An adaptive optical module (38; 138; 538) for a microlithographic projection exposure apparatus (10; 610) comprises at least one actuator (36; 36-1) for altering an optical surface (32) of the optical module, the actuator comprising a dielectric medium (48), which is deformable by means of an electric field, and electrodes (54a, 54b) for generating the electric field in the dielectric medium by application of an electrical working voltage (161). Furthermore, the adaptive optical module comprises a measuring device (162) configured to measure an electrical charge (188) situated on the electrodes when the working voltage is present, and a processing device (196; 596) configured to ascertain from the charge measurement a variable (42-1; 594) relating to a deflection (42-1) of the actuator, the measuring device (162) comprising a measuring capacitor (164) and a voltage measuring unit (176) and being configured to determine the electrical charge on the electrodes by voltage measurement, the voltage measuring unit being configured to carry out the voltage measurement at the measuring capacitor (164).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/185 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs avec des moyens pour régler la forme de la surface du miroir
H02N 2/00 - Machines électriques en général utilisant l'effet piézo-électrique, l'électrostriction ou la magnétostriction
H02N 2/06 - Circuits d'entraînement; Dispositions pour la commande
The invention relates to an optical system (100A, 100B) for a projection exposure system (1), having an optical element (102, 102', 212), a support structure (134, 214) for supporting the optical element (102, 102', 212), and an interface (128A, 128B, 128C, 128D, 128E), which is used to couple the optical element (102, 102', 212) to the support structure (134, 214), wherein the interface (128A, 128B, 128C, 128D, 128E) has a first Hirth-type toothing (152), which is paired with the optical element (102, 102', 212), and a second Hirth-type toothing (166), which is paired with the support structure (134, 214), and the first Hirth-type toothing (152) and the second Hith-type toothing (166) mesh with each other in a form-fitting manner in order to fix the position of the optical element (102, 102', 212) in a reference coordinate system (K).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
G02B 7/198 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs avec des moyens pour régler la position du miroir par rapport à son support
G02B 27/62 - Appareils optiques spécialement adaptés pour régler des éléments optiques pendant l'assemblage de systèmes optiques
26.
OPTICAL ASSEMBLY, OPTICAL SYSTEM AND PROJECTION EXPOSURE APPARATUS
An optical assembly (102) for a projection exposure apparatus (1), comprising an optical element (104), a support structure (106), which carries the optical element (104), and a plurality of decoupling devices (134) which are arranged between the optical element (104) and the support structure (106) in order to mechanically decouple the optical element (104) from the support structure (106), with each decoupling device (134) comprising a first decoupling element (136) and a second decoupling element (140) connected to the first coupling element (136), the first decoupling element (136) being connected to the optical element (104) and the second decoupling element (140) being connected to the support structure (106).
The invention relates to a method for aligning two components, comprising: measuring the relative positions of the components which have been introduced into an alignment device, more particularly an optical contact bonding device, and aligning a first face of the first component relative to a second face of the second component in the alignment device in accordance with the result of measurement. The invention also relates to a method for optical contact bonding two components, comprising: aligning the two components according to the described method, and tilting the first component relative to the second component in order to bring the first face of the first component in contact with the second face of the second component.
C03C 27/06 - Liaison verre-verre par des procédés autres que la fusion
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
28.
OPTICAL MODULES FOR THE ULTRAVIOLET WAVELENGTH RANGE
The invention relates to an optical module (300) comprising an optical element (301) for a working wavelength range in the ultraviolet wavelength range and a holder (303), wherein the optical element (301) is bonded to the holder (303) by means of irradiation (309) with an adhesive (305) curable at a curing wavelength range in the ultraviolet wavelength range, and wherein the module (300) has a protective adhesive coating (307), wherein the protective adhesive coating (307) is multi-layered and is highly reflective and slightly absorbent in the working wavelength range. Furthermore, an optical module is proposed in which the adhesive protective coating that absorbs at the working wavelength has an anti-reflective coating, as well as an optical module that has a diffractive structure in the region of the adhesive.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
G02B 1/10 - Revêtements optiques obtenus par application sur les éléments optiques ou par traitement de la surface de ceux-ci
The invention relates to processing of an optical lithography object with a particle beam, comprising: application of a first voltage to the object with respect to a reference potential, in order to influence the particle beam. The invention also relates to a testing of a positionable contact element, comprising: provision of a particle beam with a predetermined particle beam current on an object; determination of a contact quality of the positionable contact element based at least in part on the particle beam current and an electric current which flows through the positionable contact element.
30.
METHOD FOR THE INTERFEROMETRIC DETERMINATION OF THE SURFACE SHAPE OF A TEST OBJECT
The invention relates to a method for the interferometric determination of the surface shape of a test object. According to one aspect, in the test arrangement (100) a test wave, which is generated from electromagnetic radiation and is reflected from the test object (110), is overlaid with a reference wave, which is split in reflection from the test wave at a reference surface (121) of a reference element (120) before said test wave hits the test object (110), wherein the test object is designed for installation in a predefined installation position in an optical system (700), wherein the reference surface is designed based on a measurement previously carried out on the reference element (120) in a predefined installation position in a measuring system (800), and wherein the surface shape of the test object in the test arrangement (100) is determined taking account of both the installation position of the test object in the optical system (700) and the installation position of the reference element (120) in the measuring system (800).
The present application relates to an apparatus and to a method for removing at least a single particulate from a substrate, especially an optical element for extreme ultraviolet (EUV) photolithography, wherein the apparatus comprises: (a) an analysis unit designed to determine at least one constituent of a material composition of the at least one single particulate; and (b) at least one gas injection system designed to provide a gas matched to the particular constituent in an environment of the at least one single particulate; (c) wherein the matched gas contributes to removing the at least one single particulate from the substrate.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a Peltier module, to an assembly and to an apparatus for mask inspection. A Peltier module according to the invention has a plurality of Peltier pellets, which are made of a semiconductor material and are arranged between a first plate forming a hot side and a second plate forming a cold side, wherein the first plate and the second plate are each made of a metallic material, and wherein a vacuum seal component is provided on the second plate.
H04N 23/52 - Caméras ou modules de caméras comprenant des capteurs d'images électroniques; Leur commande - Détails de structure Éléments optimisant le fonctionnement du capteur d'images, p. ex. pour la protection contre les interférences électromagnétiques [EMI] ou la commande de la température par des éléments de transfert de chaleur ou de refroidissement
H01L 23/38 - Dispositifs de refroidissement utilisant l'effet Peltier
An imaging optical arrangement serves to image an object illuminated by X-rays. An imaging optics serves to image a transfer field in a field plane into a detection field in a detection plane. A layer of scintillator material is arranged at the transfer field. A stop is arranged in a pupil plane of the imaging optics. The imaging optics has an optical axis. A center of a stop opening of the stop is arranged at a decentering distance with respect to the optical axis. Such imaging optical arrangement ensures a high quality imaging of the object irrespective of a tilt of X-rays entering the transfer field. The imaging optical arrangement is part of a detection assembly further comprising a detection array and an object mount. Such detection assembly is part of a detection system further comprising an X-ray source.
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X
34.
METHOD AND MEASURING DEVICE FOR INSPECTING PHOTOMASKS, AND EUV CAMERA
A method for inspecting photomasks, in which a photomask is illuminated by EUV radiation emitted by an EUV radiation source). EUV radiation reflected at the photomask is guided via a projection lens to an image sensor of an EUV camera such that the photomask is imaged on the image sensor. The EUV radiation passes through a pellicle which is arranged between the projection lens and the image sensor. The invention also relates to an EUV camera and to a measuring device for inspecting photomasks.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
35.
SYSTEM TO INSPECT, MODIFY OR ANALYZE A REGION OF INTEREST OF A SAMPLE BY CHARGED PARTICLES, SET OF SYSTEMS TO INSPECT, MODIFY OR ANALYZE A REGION OF INTEREST OF A SAMPLE AND METHOD TO INSPECT, MODIFY OR ANALYZE A REGION OF INTEREST OF A SAMPLE BY CHARGED PARTICLES
A system inspects, modifies or analyzes a region of interest of a sample via charged particles. A detector device of the system produces a pixel image having horizontal and vertical pixel resolutions. A charged particle deflection device produces a scanning charged particle beam in a scanning region. The deflection device has horizontal and vertical deflection units controlled by a digital to analog converter having a digital resolution larger than the horizontal pixel resolution and/or the vertical pixel resolution. An operator control interface of the system selects an assignment between respective image pixels of a desired pixel image and digital inputs of the DAC to produce horizontal and/or vertical deflection signals to guide the charged particle beam to the location of the respective image pixel. A reliable image of a sample can be obtained even when there is zooming or panning within an accessible region of the sample.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
G01N 23/2202 - Préparation d’échantillons à cet effet
36.
MASK-METROLOGY MEASURING DEVICE AND METHOD FOR EXAMINING A PHOTOMASK
The invention relates to a mask-metrology measuring device comprising a radiation source (14), an illuminating system (16), an imaging system (19) and an image sensor (20). The illuminating system (16) is designed to illuminate, in a first measurement state, a first illumination field (22) on a photomask (17) using radiation emitted by the radiation source (14). The imaging system (19) is designed to image an image on the image sensor (20) from the first illumination field (22). The measuring device can be switched between a first measurement state and a second measurement state. In the second measurement state, a second illumination field (23) on the photomask (17) is illuminated, the first illumination field (22) being located within the second illumination field (23). In the second measurement state, the first illumination field (22) is not illuminated. In the second measurement state, generated scattered light is sensed by means of the image sensor (20).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A method of 3D-inspection of a semiconductor object inside of an inspection volume of a wafer or wafer sample comprises a 3D data processing and a step for acquiring a plurality of two-dimensional images. The acquiring step comprises a monitoring step for determining whether a two-dimensional image is in conformity with a desired property of the 3D data processing. The disclosure further comprises a method of configuring the method of 3D-inspection and a system configured to execute the method of 3D-inspection as well as the method of configuring the method of 3D-inspection.
A lithography optical system comprises: actuatable individual mirrors; a vacuum-tight housing; and an electronics arrangement integrated in the vacuum-tight housing and configured for individual actuation of each individual mirror. The electronics arrangement has a plurality of electronics modules releasably installed in the vacuum-tight housing and which each have a plurality of interconnected electronic and/or electrical components. A specific electronic module has a PCB, on which the electronic and/or electrical components of the specific electronics module are arranged. The PCB is arranged on a frame of the specific electronics module. The frame has a fastening section to releasably install the specific electronics module in the vacuum-tight housing and/or to connect the specific electronics module to a further electronics module of the electronics arrangement. When installed, the fastening section of the specific electronics module is in contact with a corresponding fastening section of the vacuum-tight housing and/or of the further electronics module.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
39.
OPTICAL SYSTEM, PROJECTION EXPOSURE SYSTEM AND METHOD
An optical system for a projection exposure apparatus comprises: an obscuration stop, a stop for the numerical aperture or an extraneous light stop, at least portions of which are arranged in a beam path of the optical system to shade at least portions of the beam path; a heating device for introducing heat into the stop, the stop being deformable from an initial geometry into a design geometry with the aid of the introduction of the heat; and a temperature sensor, a photo element and/or an infrared camera.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
40.
METHOD FOR IMAGING WITH A SCANNING ELECTRON MICROSCOPE AND SCANNING ELECTRON MICROSCOPE FOR CARRYING OUT THE METHOD
In the context of imaging with a scanning electron microscope, a sample to be imaged is first positioned in a vacuum chamber of the scanning electron microscope (SEM), such that an imaging field of the SEM arrives at a section of the sample to be imaged. Water is added to the vacuum chamber, such that the water is precipitated as an H2O layer on the sample in the region of the imaging field. The sample in the vacuum chamber is then cooled to a temperature below −10° C. Then a sample cleaning operation is performed with the aid of at least one electron cleaning scan within a cleaning field within which the imaging field lies. The H2O layer is removed during the cleaning scan. Then the imaging field is imaged with the aid of an electron imaging scan after the at least one cleaning scan has ended. The result is an imaging method in which a sample surface of the sample to be imaged in the imaging of an imaging field is reliably clean.
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériau; Moyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/26 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions
41.
COMPUTER IMPLEMENTED METHOD FOR THE DETECTION OF DEFECTS IN AN OBJECT COMPRISING INTEGRATED CIRCUIT PATTERNS AND CORRESPONDING COMPUTER PROGRAM PRODUCT, COMPUTER-READABLE MEDIUM AND SYSTEM MAKING USE OF SUCH METHODS
The invention relates to a computer implemented method (26) for defect detection comprising: obtaining an imaging dataset (22) of an object (98) comprising integrated circuit patterns; obtaining a reference dataset (36) of the object (98); registering the imaging dataset (22) and the reference dataset (36) by obtaining at least one transformation field pair (37) comprising an input transformation field (33) and a corresponding reference transformation field (35), wherein the input transformation field (33) or the reference transformation field (35) can be zero; and detecting defects in the imaging dataset (22) using the at least one obtained transformation field pair (37). The invention also relates to a computer-readable medium, a computer program product and a system (96) for detecting defects (24).
An optical system comprises: a plurality of optical components for guiding radiation in the optical system; a plurality of assemblies, each assembly comprising at least one actuator/sensor device assigned to one of the optical components; and a number of actuating units for actuating the plurality of assemblies. Each actuating unit is assigned at least two of the assemblies. An interface is provided for electrically coupling the respective actuating unit to the assemblies assigned to the actuating unit to transmit respective electrical signals between the actuating unit and the respective assemblies assigned to the actuating unit. The respective electrical signals comprise a data signal and/or electrical energy for operating the respective assembly. The interface for each assembly assigned to the actuating unit has a respective bundle of electrical cables.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
43.
3D VOLUME INSPECTION METHOD AND METHOD OF CONFIGURING OF A 3D VOLUME INSPECTION METHOD
A method of 3D-inspection of a semiconductor object inside of an inspection volume of a wafer or wafer sample comprises a 3D data processing and a step for acquiring a plurality of two-dimensional images. The acquiring step comprises a monitoring step for determining whether a two-dimensional image is in conformity with a desired property of the 3D data processing. The disclosure further comprises a method of configuring the method of 3D-inspection and a system configured to execute the method of 3D-inspection as well as the method of configuring the method of 3D-inspection.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/304 - Commande des tubes par une information en provenance des objets, p.ex. signaux de correction
H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper
44.
SYSTEM HAVING A LITHOGRAPHY APPARATUS AND A NUMBER OF ELECTRONICS MODULES, AND METHOD FOR OPERATING A SYSTEM
The invention relates to a system having a lithography apparatus (1) and a number N of electronics modules (100) for a number of actuator/sensor devices (200) of the lithography apparatus (1), where N ≥ 1, wherein the electronics module (100) comprises a software component (400) having a plurality of software functionalities, wherein the software component (400) is operable in a plurality of different operating modes (N, S, S1, S2, S3) at least comprising a standard mode (N) and at least one service mode (S, S1, S2, S3), wherein a first set of the software functionalities, the first set being designed as a subset, is implementable in the standard mode (N) and a second set of the software functionalities, the second set being larger than the first set, is implementable in the service mode (S, S1, S2, S3).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
45.
METHOD FOR MEASURING PHOTOMASKS FOR SEMICONDUCTOR LITHOGRAPHY
A method for measuring photomasks for semiconductor lithography, includes the following steps:
loading a photomask into a recording unit of a measuring apparatus,
recording images of individual measurement regions on the photomask by means of an image capturing unit,
comparing at least one recorded image of a measurement region with a simulated image of this measurement region using specific simulation parameters. In the process, the comparison of at least one of the recorded images with the corresponding simulated image is used to carry out an adjustment of at least one portion of the simulation parameters.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a mechatronic element which comprises a mechatronic arrangement and a protective layer. The mechatronic element is characterised in that the protective layer is at least partially applied to at least one surface and/or at least partially within at least one cavity. The invention also relates to an individual mirror for reflecting DUV and/or VUV and/or EUV radiation which comprises the mechatronic element according to the invention and a reflective coating, wherein the reflective coating is applied at least partially on a surface. The invention also relates to a micromirror array with at least two individual mirrors according to the invention. The invention also relates to a facet mirror with at least two micromirror arrays according to the invention. The invention also relates to a semiconductor technology system comprising at least one facet mirror according to the invention. The invention also relates to a method for producing a mechatronic element according to the invention, and to a method for producing an individual mirror according to the invention.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
47.
METHODS AND DEVICES FOR EXTENDING A TIME PERIOD UNTIL CHANGING A MEASURING TIP OF A SCANNING PROBE MICROSCOPE
The present invention relates to methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope. In particular, the invention relates to a method for hardening a measuring tip for a scanning probe microscope, comprising the step of: Processing the measuring tip with a beam of an energy beam source, the energy beam source being part of a scanning electron microscope.
H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p.ex. implantation d'ions
48.
HIGH RESOLUTION, LOW ENERGY ELECTRON MICROSCOPE FOR PROVIDING TOPOGRAPHY INFORMATION AND METHOD OF MASK INSPECTION
A corrected scanning electron microscope (CSEM) and a method of operating the CSEM for selectively separating a material contrast from a topography contrast is presented. The microscope and the method enable high imaging resolution with backscattered electrons generated from low energy primary electrons. The CSEM and the method is applicable to mask repair and circuit editing processes with resolution requirements in the low nm range or even below.
G01N 23/203 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux en mesurant la rétrodiffusion
G01N 23/20058 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux en mesurant la diffraction des électrons, p.ex.la diffraction d’électrons lents [LEED] ou la diffraction d’électrons de haute énergie en incidence rasante [RHEED]
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/244 - Détecteurs; Composants ou circuits associés
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
49.
OPTICAL ELEMENT HAVING A POLISHING LAYER, LITHOGRAPHY APPARATUS COMPRISING THE OPTICAL ELEMENT, AND METHOD FOR PRODUCING THE OPTICAL ELEMENT
The invention relates to an optical component (100) comprising a mirror element (120), a substrate (130) for supporting the mirror element (120), and an actuator unit (140) for tilting the mirror element (120) about at least one tilt axis (128), wherein the actuator unit (140) has a plurality of active actuator electrodes (145) and one or more passive actuator electrodes (144) and the active actuator electrodes (145) and the passive actuator electrodes (144) are in the form of comb electrodes and each have multiple comb fingers with a free end, wherein the free ends of at least one portion of the comb fingers have a differing surface geometry to one another and/or, in a non-tilted neutral position of the actuator unit (140), they do not form parallel surfaces relative to a surface of the substrate (130), wherein the free ends of the comb fingers of the active actuator electrodes (145) and/or the passive actuator electrodes (144) at least partially have a uniform or varying gradation.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
B81B 3/00 - Dispositifs comportant des éléments flexibles ou déformables, p.ex. comportant des membranes ou des lamelles élastiques
51.
METHOD FOR PRODUCING A SYSTEM COMPRISING TWO SUB-ASSEMBLIES
The invention relates to a method for producing a system (100, 100a, 100b, 100c) comprising two sub-assemblies (120, 130, 160, 190) by integrally bonding the two sub-assemblies (120, 130, 150, 160), thus forming one or more joins (150, 194, 196), by means of a joining material, and by at least partially coating the bonded two sub-assemblies (120, 130, 150, 160, 190, 194, 196) from outside in the area (135, 155, 165) of the joins (150, 194, 196) in order to produce a coating (140), wherein a coating material is used at least in part which produces a vacuum-tight layer (146) for insulating one or more underlying layers (142, 144, 198) of the coating (140) and/or of the joins (150, 194, 196) with respect to a vacuum environment (110) surrounding the system (100, 100a, 100b, 100c).
B81C 1/00 - Fabrication ou traitement de dispositifs ou de systèmes dans ou sur un substrat
52.
COMPUTER IMPLEMENTED METHOD FOR THE DETECTION OF DEFECTS IN AN IMAGING DATASET OF AN OBJECT COMPRISING INTEGRATED CIRCUIT PATTERNS, COMPUTER-READABLE MEDIUM, COMPUTER PROGRAM PRODUCT AND A SYSTEM MAKING USE OF SUCH METHODS
The invention relates to a computer implemented method (14) for the detection of defects (12) in an imaging dataset (10) of an object comprising integrated circuit patterns, the method comprising: obtaining an imaging dataset (10) of the object; applying an autoencoder neural network to the imaging dataset (10) to obtain a reconstruction (26) of the imaging dataset (10); obtaining an anomaly dataset (28) by comparing the imaging dataset (10) to the reconstruction (26) of the imaging dataset (10); applying a defect identification method to the anomaly dataset (28) to obtain defect detections (73) by means of a defect criterion, wherein the defect identification method comprises generating an irregularity mask indicating irregular patterns in the inte- grated circuit patterns of the object. The invention also relates to a corresponding computer-readable medium, computer program product and a system.
The present invention relates to an apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a test system (1) comprising a test chamber (2) in which a test object can be arranged, wherein the test chamber (2) has at least one chamber wall (3) delimiting the test chamber (2), wherein the test chamber (2) is assigned a first vacuum generator (12) in order to generate a vacuum in the test chamber (2), and wherein the chamber wall (3) has an opening (4) that is assigned a sensor module (5), wherein the sensor module (5) has a support element (6) arranged on the chamber wall (3) such that it closes the opening (4), as well as a sensor (10), in particular an optical sensor, temperature sensor, pressure sensor, gas sensor or camera sensor, arranged on a side of the support element (6) facing the test chamber (2). According to the invention, a negative-pressure chamber (17) associated with the opening (4) is formed on the side of the chamber wall (3) facing away from the test chamber (2), and the negative-pressure chamber (17) is assigned a negative pressure generator (19) in order to be able to generate a negative pressure in the negative-pressure chamber (17) independently of a vacuum in the test chamber (2).
The invention relates to a method for producing a mirror assembly, as well as a coating system. The mirror assembly can be, in particular, a mirror assembly for microlithography, e.g. for a microlithographic projection exposure system. In a method according to the invention, in a coating process of a plurality of mirror substrates (106, 206, 306, 406) carried out in a coating system, coating material is supplied by at least one target (103, 203, 303, 403, 503) for the deposition of at least one respective layer system on each of the mirror substrates (106, 206, 306, 406), wherein the mirror substrates (106, 206, 306, 406) are each tilted by a tilt angle that can be individually adjusted for each mirror substrate in order to individually adjust the respective thickness profile generated in the coating process.
C23C 14/04 - Revêtement de parties déterminées de la surface, p.ex. au moyen de masques
C23C 14/22 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le procédé de revêtement
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
56.
CHROMATICALLY CORRECTED IMAGING ILLUMINATION OPTICAL UNIT FOR USE IN A LITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
A chromatically corrected imaging illumination optical unit (20) serves for use in a lithographic projection exposure apparatus and in particular for imaging, in a manner adapted to a downstream projection optical unit, an illumination conditioning field (16a) via an imaging beam path (23) into an object field (14) of the downstream projection optical unit. The illumination optical unit (20) has at least seven and at most twelve lens elements (L1 to L9) in the imaging beam path (23). The illumination optical unit (20) has an overall transmission for illumination light of at least 85%. The result is an illumination optical unit which can be used to improve a throughput of a projection exposure apparatus equipped therewith and achieve a high illumination quality.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 13/14 - Objectifs optiques spécialement conçus pour les emplois spécifiés ci-dessous à utiliser avec des radiations infrarouges ou ultraviolettes
57.
METHODS AND DEVICES FOR THE CONTACTLESS SETTING OF AN ELECTRO-STATIC CHARGE OF A SAMPLE
The present application relates to a method (1400) and to a device (1300) for setting an electrostatic charge (200, 300) of a sample (100, 600, 1000, 1325). The method (1400) comprises the following steps: (a) adjusting (1420) at least one parameter of at least one particle beam (120, 420, 720, 1315) such that, on average, each particle (125), incident on the sample (100, 600, 1000, 1315), of the at least one particle beam (120, 420, 720, 1315) releases a predefined average number of electrons from the sample (100, 600, 1000, 1315); and (b) irradiating (1430) the sample (100, 600, 1000, 1315) with the at least one adjusted particle beam (720) in order to set the electrostatic charge (200, 300) of the sample (100, 600, 1000, 1315).
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p.ex. pour y subir un examen ou un traitement - Détails
58.
METHOD FOR EXAMINING SAMPLES PERTAINING TO MICROLITHOGRAPHY
Disclosed is a method for examining samples pertaining to microlithography, comprising the following steps:
generating an aerial image of at least one considered region of the sample and generating image structures from the aerial image,
determining distances between a plurality of starting structures present in the aerial image and respective neighboring structures, determining the distances being effected by firstly determining intersection structures intersected by a predetermined intersection line proceeding to from the respective starting structure; in this case, rectangle structures are defined in the considered region for the determination of the intersection structures.
An optical component group, in particular for use in an illumination device of a microlithographic projection exposure apparatus, includes a first reflective component having a first reflection layer system, and a second reflective component having a second reflection layer system. The first reflective component and the second reflective component correspond in terms of the geometry of their optically effective surface. The spectral reflection profiles (r1s(λ), r1p(λ)) of the first reflection layer system differ from the corresponding spectral reflection profiles (r2s(λ), r2p(λ)) of the second reflection layer system for a given wavelength interval and a given angle of incidence of incident electromagnetic radiation. The spectral reflection profiles of the first reflection layer system describe the respective wavelength dependence of the reflectivity in the case of s-polarized and in the case of p-polarized radiation.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
60.
MEASUREMENT APPARATUS, METHOD FOR OPERATING A MASK-METROLOGY MEASUREMENT APPARATUS, AND COMPUTER PROGRAM PRODUCT
Method for operating a mask-metrology measurement apparatus, wherein an image of a section of a photomask is recorded with a first image sensor and wherein an aerial image is generated by virtue of the image raw data obtained with the image sensor being subjected to a clear normalization. The aerial image is subjected to a non-linearity adaptation, which comprises the following steps. In step a., the aerial image is mathematically combined with a clear image (CT2T). In step b., linearity correction (Plin1) is applied to the image data generated in step a. to correct a linearity error of the first image sensor. In step c., a non-linearity adaptation (P−1lin2) is applied to the linearity-corrected image data obtained in step b. to imprint a linearity signature of a second image sensor not arranged in the beam path of the measurement apparatus on the image data. In step d., a clear normalization is applied to the linearity-adapted image data generated in step c. The invention also relates to a mask-metrology measurement apparatus and to a computer program product.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 1/36 - Masques à correction d'effets de proximité; Leur préparation, p.ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G06T 5/50 - Amélioration ou restauration d'image en utilisant plusieurs images, p.ex. moyenne, soustraction
A method for determining a position of a mirror of an optical system comprises: a) providing at least one parameter from a mechanical model of the mirror, b) interferometrically detecting a temporal change in a distance of a point of a curved mirror effective surface; and c) ascertaining an amplitude and a phase of N eigenmodes from the temporal change in the distance and the at least one parameter to determine the position of the mirror.
G01D 5/28 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens optiques, c. à d. utilisant de la lumière infrarouge, visible ou ultraviolette avec déviation des rayons lumineux, p.ex. pour une indication optique directe
G01D 5/26 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens optiques, c. à d. utilisant de la lumière infrarouge, visible ou ultraviolette
G02B 26/00 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
62.
EUV ILLUMINATION DEVICE AND METHOD FOR OPERATING A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS DESIGNED FOR OPERATION IN THE EUV
An EUV illumination device and related method for operating a microlithographic projection exposure apparatus designed for operation in the EUV. An EUV illumination device comprises a first reflective component, a second reflective component and an exchange apparatus by which the first reflective component and the second reflective component in the optical beam path are exchangeable for one another. A polarization degree, defined as a ratio between the reflectivities for s-polarized and p-polarized radiation, for the first reflective component is at least 1.5 times greater than for the second reflective component.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a module for a projection exposure apparatus (1, 101) for semiconductor lithography, comprising a heating device having at least one radiation source (53) for emitting electromagnetic heating radiation for heating at least regions of a component (Mx, 117) of the module. In this context, the heating device comprises at least one heating element (51) which is built into the component (Mx, 117) and configured to convert radiant energy into heat. The invention also comprises a corresponding method and a projection exposure apparatus, equipped with a module according to the invention, for semiconductor lithography.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A multi-mirror array comprises a carrier structure and a multiplicity of mirror units arranged next to one another in a grid arrangement on the carrier structure. Each mirror unit comprises a base element and a mirror element. Each mirror element is mounted individually movably relative to the base element. Each mirror element has a mirror substrate, which, on a front surface facing away from the base element, bears a reflection coating, which can be designed for EUV radiation or for DUV radiation. The mirror surfaces are arranged next to one another to substantially fill the surface area. Between directly adjacent mirror elements there is a gap delimited by side surfaces of the adjoining mirror substrates to ensure a collision-free relative movement of the adjacent mirror elements.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
65.
DEVICE AND METHOD FOR REDUCING CONTAMINATION IN AN OPTICAL SYSTEM FOR MICROLITHOGRAPHY
The invention relates to a device and to a method for reducing contamination in an optical system for microlithography. A contamination reduction device according to the invention has: a carrier component (13, 23) that carries at least one getter material; and a drive mechanism (14, 24) for driving the carrier component (13, 23) in such a way that the getter material located on the carrier component (13, 23) can be transported between a first position, in which contaminants present in an internal region of the optical system can be absorbed by the getter material in order to reduce contamination, and a second position, in which contaminants can be removed from the getter material for regeneration.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
F04B 37/02 - Pompes spécialement adaptées aux fluides compressibles et ayant des caractéristiques pertinentes non prévues dans les groupes ou présentant un intérêt autre que celui visé par ces groupes pour l'évacuation, par absorption ou adsorption
66.
OPTICAL SYSTEM, LITHOGRAPHY APPARATUS, AND METHOD FOR PRODUCING AN OPTICAL SYSTEM
The invention relates to an optical system (200) for a lithography apparatus (1), comprising a number of optical elements (202) for guiding radiation (204), a carrier device (208) for carrying the number of optical elements (202), the carrier device comprising a contacting unit (214), and a printed circuit board (218) that is electrically connectable to the contacting unit (214).
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
The invention relates to an optical system (200) for a lithography system (1), comprising: a number of optical elements (202) for guiding radiation (204), a support device (208) for supporting the optical elements (202), and a plurality N of active and/or passive components (214, 252, 700, 702, 1000, 1002, 1004, 1005, 1006, 1008, 1112, 1114), wherein the active and/or passive components (214, 252, 700, 702, 1000, 1002, 1004, 1005, 1006, 1008, 1112, 1114) are arranged on the support device (208) in at least two different planes (E1 – E9), wherein the active and/or passive components (214, 252, 700, 702, 1000, 1002, 1004, 1005, 1006, 1008, 1112, 1114) are arranged on one side (212) of the support device (208).
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
68.
DEVICE AND METHOD FOR OPERATING A BENDING BEAM IN A CLOSED CONTROL LOOP
The present invention relates to a device for operating at least one bending beam in at least one closed control loop, wherein the device has: (a) at least one first interface designed to receive at least one controlled variable of the at least one control loop; (b) at least one programmable logic circuit designed to process a control error of the at least one control loop using a bit depth greater than the bit depth of the controlled variable; and (c) at least one second interface designed to provide a manipulated variable of the at least one control loop.
COMPUTER IMPLEMENTED METHOD, COMPUTER-READABLE MEDIUM, COMPUTER PROGRAM PRODUCT AND CORRESPONDING SYSTEMS FOR GENERATING AERIAL IMAGES OF PHOTOLITHOGRAPHY MASKS
The invention relates to a computer implemented method (54, 54', 54'', 54''') for generating an aerial image (64) of a model of a photolithography mask (14) under illumination by incident electromagnetic waves (22), the method comprising: a) Approximately simulating the propagation of the incident electromagnetic waves (22) within a first section (25) of the photolithography mask (14) that comprises multiple structures; b) Simulating the propagation of the simulated electromagnetic waves (22) from step a) within a second section (27) of the photolithography mask (14) analytically or numerically; c) Simulating a representation of an electromagnetic near field (20) of the model of the photolithography mask (14) by propagating the simulated electromagnetic waves (22) from step b) to a near field plane (52); and d) Generating an aerial image (64) of the photolithography mask (14).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
70.
METHOD AND APPARATUS FOR DETERMINING OPTICAL PROPERTIES OF DEPOSITION MATERIALS USED FOR LITHOGRAPHIC MASKS
The present invention refers to a method for determining at least one optical property of at least one deposition material used for a lithographic mask which comprises the steps: (a) determining a height value of the at least one deposition material deposited on a substrate for each of at least three different deposition heights of the deposition material, wherein the at least three different deposition heights are in a nanoscale range; (b) determining a reflectivity value of the at least one deposition material for each of the at least three different deposition heights, wherein determining the reflectivity values comprises using photons generated by an optical inspection system; and (c) determining the at least one optical property of the at least one deposition material by adapting simulated reflectivity data to the measured reflectivity values for each of the at least three different deposition heights.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
An optical element (M2) for reflecting radiation includes: a substrate (31) formed from quartz glass or from a glass ceramic and having a first part-body (26a) and a second part-body (26b) that are joined along a bonding face (27) by hot bonding, a plurality of cooling channels (25) that run within the substrate (31) in the region of the bonding face (27) and are separated from one another by lands (35), and a reflective coating (33) applied to a surface (32) of the first part-body. In the substrate, a respective cooling channel (25) has a channel wall (36) which, at at least one position (PS) adjoining a respective land (35), has a zero crossing temperature (TZC,S) that deviates by less than 3.0 K from a zero crossing temperature (TZC,M) at a middle (M) of the land. Also disclosed is an associated optical arrangement e.g. for an EUV lithography system.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
An EUV collector (34) is used to collect EUV usable light (10) emitted from a source region (21). A diffraction grating (24) for the EUV usable light (10) is applied to a reflective surface (30, 31, 35) of the collector (34). The EUV usable light (10) emitted from the source region (21) is diffracted by the diffraction grating (24) toward a collecting region (25). The reflective surface (30, 31, 35) is designed, at least in some sections, as a planar reflective surface (30), as a parabolic reflective surface, as a rotationally symmetrical, frustoconical reflective surface (35), or as a hollow-cylindrical reflective surface (31). It is also possible to design the reflective surface with elliptical reflective surface sections having first focal points located in the source region (21), and having second focal points (59, 60) that are spaced apart from one another and from the collecting region (25). This results in an EUV collector which makes possible, with reasonable production cost, an effective separation between EUV usable light that is intended to be collected with the aid of the collector and extraneous light having a wavelength that differs from a usable light wavelength.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
73.
APPARATUS FOR ANALYSING AND/OR PROCESSING A SAMPLE WITH A PARTICLE BEAM AND METHOD
What is proposed is an apparatus for analysing and/or processing a sample with a particle beam, comprising:
What is proposed is an apparatus for analysing and/or processing a sample with a particle beam, comprising:
a providing unit for providing the particle beam; and
What is proposed is an apparatus for analysing and/or processing a sample with a particle beam, comprising:
a providing unit for providing the particle beam; and
a test structure attached to the providing unit;
What is proposed is an apparatus for analysing and/or processing a sample with a particle beam, comprising:
a providing unit for providing the particle beam; and
a test structure attached to the providing unit;
wherein the apparatus is configured for implementing an etching process and/or a deposition process on the test structure using the particle beam.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
The invention relates to an optical system (100) for a projection exposure apparatus (1), comprising a first component (102), a second component (110) and a fastening device (118), by means of which the second component (110) is fastened to the first component (102), wherein the fastening device (118) has a decoupling bushing (200A, 200B, 200C, 200D) for mechanically decoupling the second component (110) from the first component (102), and wherein the decoupling bushing (200A, 200B, 200C, 200D) has a decoupling groove (228, 230), which reduces the stiffness of the decoupling bushing (200A, 200B, 200C, 200D).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
The invention relates to a method and a device for mask inspection, wherein the mask is designed for operation in reflection at an operating wavelength of less than 30 nm and is intended to be illuminated in a lithography process in a projection exposure apparatus for exposing a wafer. In a method according to the invention, an object field (1260) situated in an object plane (OP) and illuminated with EUV radiation having a wavelength of less than 30 nm by way of an illumination system (1310) is imaged by a projection lens (1220, 1320) onto an image field (230, 330, 430, 530, 630, 730, 930, 1030, 1 130) situated in an image plane (IP), wherein a sensor arrangement (200, 300, 400, 500, 600, 700, 900, 1000, 1 100, 1340) having a plurality of sensors (201, 202,..., 301, 302,...) is situated in the image plane, wherein the mask (1330) is guided over the object field in the object plane in a scanning operation, and wherein an image of the mask is formed by combining sensor images captured by each of the individual sensors in the scanning operation.
An optical system (100) for a projection exposure apparatus (1), comprising an optical element (108), and a mount (116), which carries the optical element (108), wherein the mount (116) comprises an outer ring (118), in which the optical element (108) is accommodated at least in portions, wherein the outer ring (118) comprises securing portions (134) which are cohesively connected to the optical element (108), wherein the securing portions (134) are pivotably connected to the outer ring (118) with the aid of joint portions (142, 146), and wherein the mount (116) comprises a tool interface (172) for releasably securing a tool for swapping the optical system (100) from an illumination optical unit (4).
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
77.
INTERCHANGEABLE-OBJECT HOLDING APPARATUS FOR AN EUV METROLOGY SYSTEM, METHOD FOR CALIBRATING SUCH AN INTERCHANGEABLE-OBJECT HOLDING APPARATUS AND EUV METROLOGY SYSTEM HAVING SUCH AN INTERCHANGEABLE-OBJECT HOLDING APPARATUS
An interchangeable-object holding apparatus for an EUV metrology system serves for holding and providing an interchangeable object, which is intended to be used interchangeably within the EUV metrology system. An interchangeable-object holder is drivably displaceable via at least one holding drive. A calibration device serves for calibrating a relative position of the interchangeable object in the interchangeable-object holder with respect to a calibration object of the interchangeable-object holding apparatus. The calibration device has a plurality of holder abutment bodies, secured to the interchangeable-object holder, and a plurality of calibration-object counter-abutment bodies, secured to the calibration object. At least one contact sensor of the calibration device serves for detecting a contact between the respective holder abutment body and the respective calibration-object counter-abutment body. An evaluation unit is in signal communication with the holder drive and the contact sensor. The evaluation unit serves for determining the relative position of the interchangeable object in the interchangeable-object holder with respect to the calibration object from captured position and measurement data of the holder drive and of the contact sensor. The result is an interchangeable-object holding apparatus with which the interchangeable-object holder can be positioned relative to the calibration object with a specified level of accuracy and with less metrological complexity of the calibration device compared with the prior art.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
78.
INTERFEROMETER DEVICE FOR MEASURING A SURFACE, METHOD FOR INTERFEROMETRICALLY MEASURING A SURFACE, AND LITHOGRAPHY SYSTEM
The invention relates to an interferometer device (1) for measuring a surface (2) of an optical element (3), comprising: - a radiation source (4) for generating measurement radiation (5); - an illuminating apparatus (6) for influencing the measurement radiation (5); and - a camera apparatus (7) for recording an interferogram of the measurement radiation (5). According to the invention: - the radiation source (4) has a first operating mode and a second operating mode, which differ with respect to a coherence and/or a wavelength spectrum (8) of the generated measurement radiation (5); - and a delay apparatus (9), which can be operated depending on each operating mode, is provided for influencing an interference capability of the measurement radiation (5), wherein: - a switching apparatus (10) is provided and designed to measure the surface (2) in the first operating mode when the surface (2) has a curved shape and to measure the surface (2) in the second operating mode when the surface (2) has a planar shape.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a cooling device (100, 200, 300, 400, 500, 600) for a lithography system (1) comprising an optical element (102), a cooling channel (106) through which a coolant can flow and which is coupled to the optical element (102) for heat transfer, a coolant supply line (104, 204, 304, 404) that is fluidically connected upstream of the cooling channel (106), and a coolant discharge line (108) that is fluidically connected downstream of the cooling channel (106), wherein at least two respective line sections (110, 112, 210, 214, 218, 310, 314, 318, 410, 414, 418, 422, 426, 510, 512, 610, 612, 614) are connected one after another in the coolant supply line (104, 204, 304, 404, 504, 604) and/or in the coolant discharge line (108), wherein in the coolant the waves propagate at different speeds (c) in the at least two line sections (110, 112, 210, 214, 218, 310, 314, 318, 410, 414, 418, 422, 426, 510, 512, 610, 612, 614).
An EUV lithography system (1) including: a housing (26), at least one reflective optical element (M1, M2) disposed within an interior (27) of the housing (26), and at least one gas-binding component (31a-c) having a gas-binding material for binding gaseous contaminating substances (29) present in the interior (27). The gas-binding component is formed as a foil (31a-c) and a coating (33, 33a,b) containing the gas-binding material is applied on at least one side (32a, 32b) of the foil (31a-c).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A DUV lithography apparatus comprises: a light source for generating DUV radiation at at least one operating wavelength in the DUV wavelength range; a photomask; and an optical element which transmits the DUV radiation and is spaced apart from the photomask and to which an absorbent coating is applied. The absorbent coating has absorbent microstructures which cover a surface region to which the absorbent coating is applied with a surface area proportion of less than 0.1% and optionally more than 0.01%.
The invention relates to a method for producing a mirror (26) of a microlithographic projection exposure apparatus (1), a first mirror part (27) and a second mirror part (28) being provided, which are in contact in the region of a first connecting surface (29) of the first mirror part (27) and a second connecting surface (30) of the second mirror part (28). For forming a durable connection between the first mirror part (27) and the second mirror part (28), the first mirror part (27) and the second mirror part (28) are heated up to a holding temperature of at least 400°C and are kept at the holding temperature during a holding time. After the holding time has elapsed, the first mirror part (27) and the second mirror part (28) are cooled down to a first cooling temperature at a first cooling rate of a maximum of 100 K/h.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G21K 1/06 - Dispositions pour manipuler des particules ou des rayonnements ionisants, p.ex. pour focaliser ou pour modérer utilisant la diffraction, la réfraction ou la réflexion, p.ex. monochromateurs
The invention relates to a method (80) for interferometrically measuring a shape of a surface (12) of a test object (14). The method (80) comprises taking measurements of the surface shape by means of an interferometric measuring device (10) in each of at least two different measuring configurations. Furthermore, the method (80) comprises a differencing (92) of the measurement results (82, 84) and a separation (96) of measurement artefacts (88, 90) attributable to each measurement configuration, as well as a subtraction (98) of the associated measurement artefacts (88, 90) from at least one of the measurement results (82, 84). The invention also relates to a measuring device (10) for measuring a shape of a surface (12) of a test object (14).
The invention relates to a mirror arrangement, in particular for a lithography system, comprising: a plurality of mirror elements (21), in particular in the form of MEMS mirror modules, for reflecting radiation, a plurality of carrier elements (24), which each have a head region (27) for receiving one of the mirror elements (21), a mounting arrangement (25), which has insert openings, which are designed to receive a seat portion (28) of the carrier elements (24), wherein the seat portions (28) of the plurality of carrier elements (24) are received in the insert openings of the mounting arrangements (25). The carrier elements (24) each have a channel device (32) for conveying a cooling medium (31), said channel device comprising an inlet (33) for the cooling medium (31) and an outlet (34) for the cooling medium (31).
This disclosure relates to a method for producing a mirror of a microlithographic projection exposure apparatus, a first mirror part and a second mirror part being provided, which are in contact in the region of a first connecting surface of the first mirror part and a second connecting surface of the second mirror part. For forming a durable connection between the first mirror part and the second mirror part, the first mirror part and the second mirror part are heated up to a holding temperature of at least 400° C. and are kept at the holding temperature during a holding time. After the holding time has elapsed, the first mirror part and the second mirror part are cooled down to a first cooling temperature at a first cooling rate of less than or equal to 100 K/h.
A mirror socket (112, 112A, 112B, 112C, 112D, 112E, 112F, 112G, 112H, 112I, 112 J, 112K, 112L, 112M, 112N, 112O, 114, 116) for an optical element (102, 102'), comprising a centre axis (126), a first spatial direction (x) oriented perpendicular to the centre axis (126) and a second spatial direction (y) oriented perpendicular to the centre axis (126) and perpendicular to the first spatial direction (x), wherein the mirror socket (112, 112A, 112B, 112C, 112D, 112E, 112F, 112G, 112H, 112I, 112 J, 112K, 112L, 112M, 112N, 112O, 114, 116) has a first stiffness viewed in the first spatial direction (x) and a second stiffness viewed in the second spatial direction (y) and wherein the first stiffness and the second stiffness have different magnitudes.
The invention relates to a mirror arrangement, in particular for a lithography system (1), comprising: a plurality of mirror elements (23) for reflecting radiation (16), a plurality of carrier elements (24), which each carry one of the mirror elements (23), and a mount arrangement (25) having insert openings (26) formed in each case to accommodate a respective one of the carrier elements (24), with the plurality of carrier elements (24), which each carry one of the mirror elements (23), being accommodated in the insert openings (26) of the mount arrangement (25). For absorbing radiation (16), at least one of the insert openings (26) does not accommodate a carrier element (24) and/or, for absorbing radiation (16), at least one of the insert openings (26) accommodates a dummy carrier element (24') which does not carry a mirror element (23).
An optical system for a projection exposure apparatus comprises: a first component; a second component which is actuable within an actuation region relative to the first component; and an end stop device which permits a movement of the second component relative to the first component within the actuation region and which blocks it outside the actuation region. The end stop device comprises a bending element having a stiffness which increases abruptly upon reaching a limit of the actuation region to block the movement of the second component relative to the first component.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
89.
METHOD FOR THREE-DIMENSIONAL DETERMINATION OF AN AERIAL IMAGE OF A MEASUREMENT OBJECT WITH THE AID OF A METROLOGY SYSTEM AND METROLOGY SYSTEM FOR CARRYING OUT THE DETERMINATION METHOD
For the three-dimensional determination of an aerial image of a measurement object with the aid of a metrology system, a 3D aerial image of the measurement object is measured as a measurement intensity result in an image field in a plurality of measurement operating situations (35), each of which corresponds to a defocus value of an imaging optical unit of the metrology system. Furthermore, a model intensity result of the 3D aerial image in the image field in corresponding model operating situations is specified (36). A complex-valued diffraction spectrum of the measurement object, calculated in a pupil plane of the imaging optical unit on the basis of a measurement object location function, of an object field illumination angle distribution and of a complex-valued imaging optical unit transfer function, are included in the specified model intensity result. A deviation of the measurement intensity result from the model intensity result is minimized (37) by adapting the model intensity result via a variation of the complex-valued diffraction spectrum. The location function of the measurement object is calculated back (38) from the diffraction spectrum for which the deviation is minimized, which is then output (39). The result is an aerial image determination method in which a noise level of an aerial image result is reduced during the measurement.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
90.
METHOD AND APPARATUS FOR REPAIRING A DEFECT OF A SAMPLE USING A FOCUSED PARTICLE BEAM
The present invention relates to a method for repairing at least one defect of a sample using a focused particle beam, comprising the steps of: (a) producing at least one first local, electrically conductive sacrificial layer on the sample, wherein the first local, electrically conductive sacrificial layer has a first portion and at least one second portion, wherein the first portion is adjacent to the at least one defect and wherein the first portion and the at least one second portion are electrically conductively connected to one another; and (b) producing at least one first reference mark on the at least one second portion of the first local, electrically conductive sacrificial layer for the purposes of correcting a drift of the focused particle beam in relation to the at least one defect while the at least one defect is being repaired.
A positioning system for moving or positioning a moveable object, the system including: a dynamic support system including a reaction mass, a first support, a first spring system to support the reaction mass from the first support, a second support, a second spring system to support the first support from the second support, and a damping system to provide damping to the dynamic support system; and an actuator for generating a driving force between the moveable object and the reaction mass for moving or position the object, wherein a first eigenfrequency and a second eigenfrequency of the dynamic support system are substantially the same.
F16F 15/08 - Suppression des vibrations dans les systèmes non rotatifs, p.ex. dans des systèmes alternatifs; Suppression des vibrations dans les systèmes rotatifs par l'utilisation d'organes ne se déplaçant pas avec le système rotatif utilisant des moyens élastiques avec ressorts en caoutchouc
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
92.
OPTICAL ELEMENT, PROJECTION OPTICAL UNIT AND PROJECTION EXPOSURE APPARATUS
An optical element for a projection exposure apparatus comprises a mirror body having an optically active surface. The mirror body comprises a base portion which carries a sensor system. The mirror body comprises an edge portion on which actuator connectors for connecting actuators to the optical element are provided. The base portion has greater stiffness than the edge portion. A stiffening rib structure is attached to the back side of the edge portion, which faces away from the optically active surface. The rib structure supports the edge portion on the base portion.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
Projection exposure apparatus with manipulators A microlithographic projection exposure apparatus (10) comprises a projection lens (22) having a plurality of optical elements (R1-R4) for imaging mask structures and a plurality of manipulators (M1-M7), each of which is assigned to one of the optical elements and configured to change an optical effect of the assigned optical element by manipulating a property of the optical element along a travel. Furthermore, the projection exposure apparatus comprises a manipulator controller (42), which comprises an algorithm (46) for ascertaining a travel command (44) with travel specifications for the manipulators for correcting a wavefront deviation (48) of the projection lens. The algorithm is configured to ascertain an associated wavefront change (58) of the projection lens from a travel vector (56) with a set of manipulator travels by means of a neural network (52) and to determine the travel command (44) using an ascertainment result (59) of the neural network from the wavefront deviation (48).
The invention relates to an optical system (100) for a lithography unit (1), comprising: an optical element (104); a plurality of actuators (144), coupled to the optical element (104), for adjusting a position (P) of the optical element (104) in a first number (NF) of rigid-body degrees of freedom; a sensor frame (122) having a second number (NS) of sensor elements (124) for capturing sensor data (A, B, C, D) from the optical element (104), wherein the second number (NS) is greater than the first number (NF); and a determination device (132) for determining, on the basis of the captured sensor data (A, B, C, D), a deformation-corrected actual position (PIST) of the optical element (104) relative to the sensor frame (122) in the first number (NF) of rigid-body degrees of freedom, wherein, in the deformation-corrected actual position (PIST), a deformation of the sensor frame (122) is corrected.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
95.
OPTICAL SYSTEM, LITHOGRAPHY APPARATUS COMPRISING AN OPTICAL SYSTEM, AND ARRANGEMENT COMPRISING AN OPTICAL SYSTEM
The invention relates to an optical system (100) for a lithography apparatus (1), comprising: a vacuum housing (200) under vacuum (V), in which a number of optical elements (210) for guiding radiation in the optical system and a number of actuator/sensor devices (220) assigned to the optical elements (210) are arranged, a vacuum-tight housing (300) under atmospheric pressure (A), which is separated from the vacuum housing (200), and an electrical vacuum bushing (400) connecting the vacuum housing (200) and the vacuum-tight housing (300), for guiding at least one electrical connection (410) connected to at least one of the actuator/sensor devices (220) from the vacuum-tight housing (300) into the vacuum housing (200), wherein an optical transceiver module (310) connectable to a control device (600) via at least one optical waveguide (500), for converting optical signals into electrical signals, is arranged in the interior (320) of the vacuum-tight housing (300) and is electrically connected to the electrical vacuum bushing (400).
A method for depositing a layer (2) of a coating which is reflective or anti-reflective to DUV radiation onto a surface (3a) of a substrate (3) for a DUV optical element includes: transferring a coating material (M) into the gas phase in a coating source (4′), moving the substrate relative to the coating source along a predetermined movement path (5), and varying a coating rate (RB) and/or a rotation speed (ω(t)) of a spin axis (7) of the substrate during the movement along the movement path. A covering element (6) is arranged between the coating source (4′) and the surface and covers the surface at least partially during the movement of the substrate. Also disclosed is an optical element for the DUV wavelength range, with a substrate and a reflective or anti-reflective coating (B) applied to the substrate, having at least one layer deposited by the disclosed method.
The invention relates to a method for determining image errors of high-resolution imaging systems by wave front measurement and to a corresponding computer program product. According to the invention, in order to determine image errors of an imaging system, a design matrix is used that takes into consideration diffractions of the second order and/or higher orders in addition to diffractions of the zero and first order. Imaging errors can then be determined more accurately on the basis of imaging system images recorded by an interferogram sensor of known, twice-diffracted illumination beams.
An EUV optics module (35) for an EUV projection exposure apparatus (1) has at least one optical component (19, 21, 23, 7, M1 to M6, 13) having an optical surface for guiding of used EUV radiation (16) from an EUV source (3) along an illuminating and/or imaging beam path of the projection exposure apparatus (1). The optical component (19, 21, 23, 7, M1 to M6, 13) is accommodated in a reduced-pressure chamber (36). A gas source (37) is fluidically connected via at least one valve to the reduced-pressure chamber (36). The gas source (37) is designed such that it provides at least the following gas: hydrogen. The result is an EUV optics module having elevated operating time.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
99.
PROJECTION EXPOSURE APPARATUS FOR SEMICONDUCTOR LITHOGRAPHY HAVING A CONNECTING ELEMENT
A projection exposure apparatus for semiconductor lithography comprises a connecting element for connecting two components of the projection exposure apparatus. The connecting element comprises at least two mechanical decoupling elements, which each decouple in two mutually orthogonal rotational degrees of freedom. Overall a decoupling in all three rotational degrees of freedom is achieved by the at least two decoupling elements.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
100.
IMPROVED EDITING OF DEEP, MULTI-LAYERED STRUCTURES
An improved system and method for circuit edit or repair within multilayer structures comprising a large number of layers including layers with thicknesses below 20nm or even less, for example below 10nm or 8nm is provided. The system and method of operation is capable of an advanced end- pointing of a milling operation within the large number of layers, including of end-pointing of the thin layers without unnecessarily damaging the multilayer structure.
