A system and a method for volume inspection of semiconductor wafers with increased throughput are configured for milling and imaging a reduced number or areas of appropriate cross-sections surfaces in an inspection volume and determining inspection parameters of the 3D objects from the cross-section surface images. The method and device can be utilized for quantitative metrology, defect detection, process monitoring, defect review, and inspection of integrated circuits within semiconductor wafers.
G01N 23/2206 - Combinaison de plusieurs mesures, l'une au moins étant celle d’une émission secondaire, p.ex. combinaison d’une mesure d’électrons secondaires [ES] et d’électrons rétrodiffusés [ER]
G01N 23/2255 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’ions incidents, p.ex. des faisceaux de protons
2.
METHOD AND APPARATUS FOR PRODUCING AT LEAST ONE HOLLOW STRUCTURE, MIRROR, EUV LITHOGRAPHY SYSTEM, FLUID FEED APPARATUS AND METHOD FOR FEEDING A FLUID
A hollow structure (28) is produced in a workpiece (25) to form a substrate for a mirror through material-removing processing with pulsed laser radiation (35). The pulsed laser radiation is focused into a focal region (39), forming a removal front (46) for the areal removal of material of the workpiece (25) by moving the focal region (39) along a movement pattern (41), and producing the hollow structure (28) by moving the removal front (46) within the workpiece (25). The removal front is not aligned perpendicular to an incoming radiation direction (Z) of the pulsed laser radiation (35) at the radiation entrance side (27) of the workpiece at least intermittently during the production. The hollow structure is produced in the form of a channel through which a fluid is able to flow.
B23K 26/55 - Travail par transmission du faisceau laser à travers ou dans la pièce à travailler pour créer des vides dans la pièce à travailler, p.ex. pour former des passages ou des configurations de flux
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
3.
3D VOLUME INSPECTION OF SEMICONDUCTOR WAFERS WITH INCREASED ACCURACY
A system and a method for volume inspection of semiconductor wafers are configured for milling and imaging of reduced number or areas of appropriate cross-sections surfaces in an inspection volume and determining inspection parameters of the 3D objects from the cross-section surface images. The system and method can be utilized for quantitative metrology, defect detection, process monitoring, defect review, and inspection of integrated circuits within semiconductor wafers.
G06T 7/55 - Récupération de la profondeur ou de la forme à partir de plusieurs images
G01N 1/28 - Préparation d'échantillons pour l'analyse
G01N 23/203 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux en mesurant la rétrodiffusion
G01N 23/2206 - Combinaison de plusieurs mesures, l'une au moins étant celle d’une émission secondaire, p.ex. combinaison d’une mesure d’électrons secondaires [ES] et d’électrons rétrodiffusés [ER]
A method for calibrating a manipulable optical module for a microlithographic projection exposure apparatus, which comprises at least one manipulation element for setting an at least one-dimensional local variation profile of an optical property of the optical module is provided. The method comprises: applying a temporally varying excitation signal to the at least one manipulation element; determining a raw measurement data set via a measurement device measuring the respective local variation profile resulting at different times during the variation of the excitation signal; estimating a temporally varying scaling, caused by the temporal variation of the excitation signal, in the variation profiles of the raw measurement data set; determining a full effect profile of the optical property by fitting the temporally varying scaling to the variation profiles of the raw measurement data set; and determining calibration data of the manipulable optical module on the basis of the full effect profile.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
5.
METHOD FOR OPTIMIZING A PUPIL STOP SHAPE FOR SIMULATING ILLUMINATION AND IMAGING PROPERTIES OF AN OPTICAL PRODUCTION SYSTEM DURING THE ILLUMINATION AND IMAGING OF AN OBJECT BY MEANS OF AN OPTICAL MEASUREMENT SYSTEM
In order to simulate properties of an optical production system, use is made of an optical measurement system comprising an illumination optical unit for an object to be imaged having a pupil stop in the region of an illumination pupil and an imaging optical unit for imaging the object. In order to optimize a pupil stop shape of the pupil stop, firstly a starting stop shape of the pupil stop is predefined as an initial design candidate for the simulation. The starting stop shape is modified and at least one fabrication boundary condition of the corresponding modification stop shape is checked. The steps “modifying” and “checking” are repeated until the checking reveals compliance with the boundary conditions. A match quality between the properties of the optical production system and those of the optical measurement system is determined and the steps “modifying”, “checking” and “determining” are repeated until the match quality attains a predefined optimization criterion, which is queried. A target stop shape resulting from the target stop shape that occurred with the smallest merit function value E in the optimization is fabricated as an optimized pupil stop shape after attaining the optimization criterion. This results in simulation—as free of deviations as possible—of the illumination and imaging properties of the optical production system during the illumination and imaging of the object by use of the optical measurement system.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 7/025 - Composés photopolymérisables non macromoléculaires contenant des triples liaisons carbone-carbone, p.ex. composés acétyléniques
6.
APPARATUS AND METHOD FOR AVOIDING A DEGRADATION OF AN OPTICAL USED SURFACE OF A MIRROR MODULE, PROJECTION SYSTEM, ILLUMINATION SYSTEM AND PROJECTION EXPOSURE APPARATUS
Mirror module for a projection exposure apparatus that includes an optical used surface, an optical measurement surface, a measurement apparatus for determining the degradation state of the measurement surface, characterized in that: the mirror module comprises a temperature control apparatus configured such that the temperature of the optical measurement surface is lower than the temperature of the optical used surface.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
7.
METHOD AND APPARATUS FOR CALIBRATING AN OPERATION ON A PHOTOMASK
The present invention relates to a method and an apparatus for calibrating an operation on a mask. A method for producing correction marks on an object for lithography, in particular for calibrating an operation, using a particle beam includes: (a.) producing a first group of correction marks; and (b.) producing a second group of correction marks; (c.) wherein the separations of the correction marks within the first and within the second group are smaller than the separations between correction marks from the first group and correction marks from the second group.
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p.ex. réparation ou correction de défauts par un faisceau d'ions focalisé
G03F 1/44 - Aspects liés au test ou à la mesure, p.ex. motifs de grille, contrôleurs de focus, échelles en dents de scie ou échelles à encoches
A system and a method for measuring of parameter values of semiconductor objects within wafers with increased throughput include using a modified machine learning algorithm to extract measurement results from instances of semiconductor objects. A training method for training the modified machine learning algorithm includes reducing a user interaction. The method can be more flexible and robust and can involve less user interaction than conventional methods. The system and method can be used for quantitative metrology of integrated circuits within semiconductor wafers.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
9.
METHODS AND APPARATUSES FOR PROCESSING A LITHOGRAPHIC OBJECT
The present invention relates to methods and apparatuses for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object. In addition, the present invention relates to computer programs for controlling such apparatuses to perform such methods.
The present invention relates to methods and apparatuses for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object. In addition, the present invention relates to computer programs for controlling such apparatuses to perform such methods.
A method for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object, comprises the following steps: (a.) dividing the working region into a set of partial regions, and (b.) positioning a first quantity of first reference markings over the working region so that the first quantity of first reference markings lie within the working region.
The present invention relates to methods and apparatuses for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object. In addition, the present invention relates to computer programs for controlling such apparatuses to perform such methods.
A method for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object, comprises the following steps: (a.) dividing the working region into a set of partial regions, and (b.) positioning a first quantity of first reference markings over the working region so that the first quantity of first reference markings lie within the working region.
A further method for examining and/or processing a lithographic object, in particular a photomask, with a beam of charged particles in a working region on the object, comprises the following steps: (a.) assigning at least one reference marking from a first quantity of first reference markings, which are distributed over the working region and lie within the working region, to at least one partial region from a set of partial regions into which the working region is divided, and (b.) performing the examination and/or processing of the object in the at least one partial region while taking into account the position of the assigned at least one reference marking.
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p.ex. réparation ou correction de défauts par un faisceau d'ions focalisé
G03F 1/42 - Aspects liés à l'alignement ou au cadrage, p.ex. marquages d'alignement sur le substrat du masque
H01J 37/302 - Commande des tubes par une information d'origine externe, p.ex. commande par programme
An electron microscope serves for examining a specimen. An electron optical unit serves for passing an image of a specimen region of interest to a detection device. A removal device serves for removing material from the specimen, in the specimen region of interest, in preparation for imaging of the specimen region. A stop serves for separating the specimen region of interest from a specimen environment. The result is an electron microscope in which undesired effects of the removal device on the specimen to be examined are reduced.
G01N 23/2202 - Préparation d’échantillons à cet effet
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
11.
METHOD FOR DEPOSITING A COVER LAYER, EUV LITHOGRAPHY SYSTEM AND OPTICAL ELEMENT
A method of depositing a cover layer onto an optical element (M1) for reflection of EUV radiation. In the method, a cover layer containing phosphorus (P) is deposited onto the optical element (M1). The optical element (M1) in the course of deposition of the cover layer (35) is disposed in an interior (39) of a housing (36) of an EUV lithography system, and, for the deposition of the cover layer, phosphorus (P) is released from at least one phosphorus source (42, 43) disposed outside the interior (39) or within the interior (39). Also disclosed are an EUV lithography system and an optical element (M1) for reflecting EUV radiation.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A sensor arrangement for arrangement on a measurement chamber, wherein the sensor arrangement comprises: a sensor; an intake opening; an outlet; and a fluid connection between the intake opening and the outlet.
A method for checking an interface for the wired transmission of electrical signals to an electronics unit, arranged in a vacuum-tight housing, of an optics module comprises: a) coupling a first bundle of the interface to the electronics unit; b) connecting a test device to a free end of the first bundle; c) applying an electrical test signal generated by the test device to a specific pair of electrical lines of the first bundle; d) acquiring an electrical response signal from the specific pair of electrical lines; e) comparing the acquired response signal with a response signal predetermined for the specific pair, and f) determining whether a defect is present in one of the electrical lines of the pair on the basis of the comparison.
G01R 31/58 - Test de lignes, de câbles ou de conducteurs
G01R 27/16 - Mesure de l'impédance d'un élément ou d'un réseau dans lequel passe un courant provenant d'une autre source, p.ex. câble, ligne de transport de l'énergie
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
14.
OPTICAL SYSTEM, TEST DEVICE, LITHOGRAPHY APPARATUS, ARRANGEMENT AND METHOD
An optical system comprises a number of optics modules, wherein the respective optics module comprises: a number of displaceable optical elements for guiding radiation in the optical system; a number of actuator/sensor devices, wherein at least one of the actuator/sensor devices is assigned to the respective optical element, wherein the respective actuator/sensor device is configured to displace the assigned optical element and/or to acquire a position of the assigned optical element; a vacuum-tight housing; and an electronics unit in the vacuum-tight housing and configured to actuate the respective actuator/sensor device on the basis of received actuation data, wherein the electronics unit has a first electronics region containing a number of electrical and/or electronic component parts and that generates, and a second electronics region containing a number of electrical and/or electronic component parts.
G01R 31/28 - Test de circuits électroniques, p.ex. à l'aide d'un traceur de signaux
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
15.
APPARATUS AND METHOD FOR REMOVING A SINGLE PARTICULATE FROM A SUBSTRATE
The present application relates to an apparatus and to a method for removing at least a single particulate from a substrate, especially an optical element for extreme ultraviolet (EUV) photolithography, wherein the apparatus comprises: (a) an analysis unit designed to determine at least one constituent of a material composition of the at least one single particulate; and (b) at least one gas injection system designed to provide a gas matched to the particular constituent in an environment of the at least one single particulate; (c) wherein the matched gas contributes to removing the at least one single particulate from the substrate.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a Peltier module, to an assembly and to an apparatus for mask inspection. A Peltier module according to the invention has a plurality of Peltier pellets, which are made of a semiconductor material and are arranged between a first plate forming a hot side and a second plate forming a cold side, wherein the first plate and the second plate are each made of a metallic material, and wherein a vacuum seal component is provided on the second plate.
H04N 23/52 - Caméras ou modules de caméras comprenant des capteurs d'images électroniques; Leur commande - Détails de structure Éléments optimisant le fonctionnement du capteur d'images, p. ex. pour la protection contre les interférences électromagnétiques [EMI] ou la commande de la température par des éléments de transfert de chaleur ou de refroidissement
H01L 23/38 - Dispositifs de refroidissement utilisant l'effet Peltier
An imaging optical arrangement serves to image an object illuminated by X-rays. An imaging optics serves to image a transfer field in a field plane into a detection field in a detection plane. A layer of scintillator material is arranged at the transfer field. A stop is arranged in a pupil plane of the imaging optics. The imaging optics has an optical axis. A center of a stop opening of the stop is arranged at a decentering distance with respect to the optical axis. Such imaging optical arrangement ensures a high quality imaging of the object irrespective of a tilt of X-rays entering the transfer field. The imaging optical arrangement is part of a detection assembly further comprising a detection array and an object mount. Such detection assembly is part of a detection system further comprising an X-ray source.
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X
18.
METHOD AND MEASURING DEVICE FOR INSPECTING PHOTOMASKS, AND EUV CAMERA
A method for inspecting photomasks, in which a photomask is illuminated by EUV radiation emitted by an EUV radiation source). EUV radiation reflected at the photomask is guided via a projection lens to an image sensor of an EUV camera such that the photomask is imaged on the image sensor. The EUV radiation passes through a pellicle which is arranged between the projection lens and the image sensor. The invention also relates to an EUV camera and to a measuring device for inspecting photomasks.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
19.
SYSTEM TO INSPECT, MODIFY OR ANALYZE A REGION OF INTEREST OF A SAMPLE BY CHARGED PARTICLES, SET OF SYSTEMS TO INSPECT, MODIFY OR ANALYZE A REGION OF INTEREST OF A SAMPLE AND METHOD TO INSPECT, MODIFY OR ANALYZE A REGION OF INTEREST OF A SAMPLE BY CHARGED PARTICLES
A system inspects, modifies or analyzes a region of interest of a sample via charged particles. A detector device of the system produces a pixel image having horizontal and vertical pixel resolutions. A charged particle deflection device produces a scanning charged particle beam in a scanning region. The deflection device has horizontal and vertical deflection units controlled by a digital to analog converter having a digital resolution larger than the horizontal pixel resolution and/or the vertical pixel resolution. An operator control interface of the system selects an assignment between respective image pixels of a desired pixel image and digital inputs of the DAC to produce horizontal and/or vertical deflection signals to guide the charged particle beam to the location of the respective image pixel. A reliable image of a sample can be obtained even when there is zooming or panning within an accessible region of the sample.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
G01N 23/2202 - Préparation d’échantillons à cet effet
A lithography optical system comprises: actuatable individual mirrors; a vacuum-tight housing; and an electronics arrangement integrated in the vacuum-tight housing and configured for individual actuation of each individual mirror. The electronics arrangement has a plurality of electronics modules releasably installed in the vacuum-tight housing and which each have a plurality of interconnected electronic and/or electrical components. A specific electronic module has a PCB, on which the electronic and/or electrical components of the specific electronics module are arranged. The PCB is arranged on a frame of the specific electronics module. The frame has a fastening section to releasably install the specific electronics module in the vacuum-tight housing and/or to connect the specific electronics module to a further electronics module of the electronics arrangement. When installed, the fastening section of the specific electronics module is in contact with a corresponding fastening section of the vacuum-tight housing and/or of the further electronics module.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
21.
OPTICAL SYSTEM, PROJECTION EXPOSURE SYSTEM AND METHOD
An optical system for a projection exposure apparatus comprises: an obscuration stop, a stop for the numerical aperture or an extraneous light stop, at least portions of which are arranged in a beam path of the optical system to shade at least portions of the beam path; a heating device for introducing heat into the stop, the stop being deformable from an initial geometry into a design geometry with the aid of the introduction of the heat; and a temperature sensor, a photo element and/or an infrared camera.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
22.
METHOD FOR IMAGING WITH A SCANNING ELECTRON MICROSCOPE AND SCANNING ELECTRON MICROSCOPE FOR CARRYING OUT THE METHOD
In the context of imaging with a scanning electron microscope, a sample to be imaged is first positioned in a vacuum chamber of the scanning electron microscope (SEM), such that an imaging field of the SEM arrives at a section of the sample to be imaged. Water is added to the vacuum chamber, such that the water is precipitated as an H2O layer on the sample in the region of the imaging field. The sample in the vacuum chamber is then cooled to a temperature below −10° C. Then a sample cleaning operation is performed with the aid of at least one electron cleaning scan within a cleaning field within which the imaging field lies. The H2O layer is removed during the cleaning scan. Then the imaging field is imaged with the aid of an electron imaging scan after the at least one cleaning scan has ended. The result is an imaging method in which a sample surface of the sample to be imaged in the imaging of an imaging field is reliably clean.
An optical system comprises: a plurality of optical components for guiding radiation in the optical system; a plurality of assemblies, each assembly comprising at least one actuator/sensor device assigned to one of the optical components; and a number of actuating units for actuating the plurality of assemblies. Each actuating unit is assigned at least two of the assemblies. An interface is provided for electrically coupling the respective actuating unit to the assemblies assigned to the actuating unit to transmit respective electrical signals between the actuating unit and the respective assemblies assigned to the actuating unit. The respective electrical signals comprise a data signal and/or electrical energy for operating the respective assembly. The interface for each assembly assigned to the actuating unit has a respective bundle of electrical cables.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
24.
3D VOLUME INSPECTION METHOD AND METHOD OF CONFIGURING OF A 3D VOLUME INSPECTION METHOD
A method of 3D-inspection of a semiconductor object inside of an inspection volume of a wafer or wafer sample comprises a 3D data processing and a step for acquiring a plurality of two-dimensional images. The acquiring step comprises a monitoring step for determining whether a two-dimensional image is in conformity with a desired property of the 3D data processing. The disclosure further comprises a method of configuring the method of 3D-inspection and a system configured to execute the method of 3D-inspection as well as the method of configuring the method of 3D-inspection.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/304 - Commande des tubes par une information en provenance des objets, p.ex. signaux de correction
H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper
25.
METHOD FOR MEASURING PHOTOMASKS FOR SEMICONDUCTOR LITHOGRAPHY
A method for measuring photomasks for semiconductor lithography, includes the following steps:
loading a photomask into a recording unit of a measuring apparatus,
recording images of individual measurement regions on the photomask by means of an image capturing unit,
comparing at least one recorded image of a measurement region with a simulated image of this measurement region using specific simulation parameters. In the process, the comparison of at least one of the recorded images with the corresponding simulated image is used to carry out an adjustment of at least one portion of the simulation parameters.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The present invention relates to methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope. In particular, the invention relates to a method for hardening a measuring tip for a scanning probe microscope, comprising the step of: Processing the measuring tip with a beam of an energy beam source, the energy beam source being part of a scanning electron microscope.
H01J 37/305 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour couler, fondre, évaporer ou décaper
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p.ex. implantation d'ions
27.
HIGH RESOLUTION, LOW ENERGY ELECTRON MICROSCOPE FOR PROVIDING TOPOGRAPHY INFORMATION AND METHOD OF MASK INSPECTION
A corrected scanning electron microscope (CSEM) and a method of operating the CSEM for selectively separating a material contrast from a topography contrast is presented. The microscope and the method enable high imaging resolution with backscattered electrons generated from low energy primary electrons. The CSEM and the method is applicable to mask repair and circuit editing processes with resolution requirements in the low nm range or even below.
G01N 23/203 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux en mesurant la rétrodiffusion
G01N 23/20058 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux en mesurant la diffraction des électrons, p.ex.la diffraction d’électrons lents [LEED] ou la diffraction d’électrons de haute énergie en incidence rasante [RHEED]
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/244 - Détecteurs; Composants ou circuits associés
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
28.
APPARATUS AND METHOD FOR ANALYZING AN ELEMENT OF A PHOTOLITHOGRAPHY PROCESS WITH THE AID OF A TRANSFORMATION MODEL
The present invention relates to an apparatus for analyzing an element of a photolithography process, said apparatus comprising: (a) a first measuring apparatus for recording first data of the element; and (b) means for transforming the first data into second, non-measured data, which correspond to measurement data of a measurement of the element with a second measuring apparatus; (c) wherein the means comprise a transformation model, which has been trained using a multiplicity of first data used for training purposes and second data corresponding therewith, which are linked to the second measuring apparatus.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
Disclosed is a method for examining samples pertaining to microlithography, comprising the following steps:
generating an aerial image of at least one considered region of the sample and generating image structures from the aerial image,
determining distances between a plurality of starting structures present in the aerial image and respective neighboring structures, determining the distances being effected by firstly determining intersection structures intersected by a predetermined intersection line proceeding to from the respective starting structure; in this case, rectangle structures are defined in the considered region for the determination of the intersection structures.
An optical component group, in particular for use in an illumination device of a microlithographic projection exposure apparatus, includes a first reflective component having a first reflection layer system, and a second reflective component having a second reflection layer system. The first reflective component and the second reflective component correspond in terms of the geometry of their optically effective surface. The spectral reflection profiles (r1s(λ), r1p(λ)) of the first reflection layer system differ from the corresponding spectral reflection profiles (r2s(λ), r2p(λ)) of the second reflection layer system for a given wavelength interval and a given angle of incidence of incident electromagnetic radiation. The spectral reflection profiles of the first reflection layer system describe the respective wavelength dependence of the reflectivity in the case of s-polarized and in the case of p-polarized radiation.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
31.
MEASUREMENT APPARATUS, METHOD FOR OPERATING A MASK-METROLOGY MEASUREMENT APPARATUS, AND COMPUTER PROGRAM PRODUCT
Method for operating a mask-metrology measurement apparatus, wherein an image of a section of a photomask is recorded with a first image sensor and wherein an aerial image is generated by virtue of the image raw data obtained with the image sensor being subjected to a clear normalization. The aerial image is subjected to a non-linearity adaptation, which comprises the following steps. In step a., the aerial image is mathematically combined with a clear image (CT2T). In step b., linearity correction (Plin1) is applied to the image data generated in step a. to correct a linearity error of the first image sensor. In step c., a non-linearity adaptation (P−1lin2) is applied to the linearity-corrected image data obtained in step b. to imprint a linearity signature of a second image sensor not arranged in the beam path of the measurement apparatus on the image data. In step d., a clear normalization is applied to the linearity-adapted image data generated in step c. The invention also relates to a mask-metrology measurement apparatus and to a computer program product.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 1/36 - Masques à correction d'effets de proximité; Leur préparation, p.ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G06T 5/50 - Amélioration ou restauration d'image en utilisant plusieurs images, p.ex. moyenne, soustraction
A method for determining a position of a mirror of an optical system comprises: a) providing at least one parameter from a mechanical model of the mirror, b) interferometrically detecting a temporal change in a distance of a point of a curved mirror effective surface; and c) ascertaining an amplitude and a phase of N eigenmodes from the temporal change in the distance and the at least one parameter to determine the position of the mirror.
G01D 5/28 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens optiques, c. à d. utilisant de la lumière infrarouge, visible ou ultraviolette avec déviation des rayons lumineux, p.ex. pour une indication optique directe
G01D 5/26 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens optiques, c. à d. utilisant de la lumière infrarouge, visible ou ultraviolette
G02B 26/00 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
33.
EUV ILLUMINATION DEVICE AND METHOD FOR OPERATING A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS DESIGNED FOR OPERATION IN THE EUV
An EUV illumination device and related method for operating a microlithographic projection exposure apparatus designed for operation in the EUV. An EUV illumination device comprises a first reflective component, a second reflective component and an exchange apparatus by which the first reflective component and the second reflective component in the optical beam path are exchangeable for one another. A polarization degree, defined as a ratio between the reflectivities for s-polarized and p-polarized radiation, for the first reflective component is at least 1.5 times greater than for the second reflective component.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A multi-mirror array comprises a carrier structure and a multiplicity of mirror units arranged next to one another in a grid arrangement on the carrier structure. Each mirror unit comprises a base element and a mirror element. Each mirror element is mounted individually movably relative to the base element. Each mirror element has a mirror substrate, which, on a front surface facing away from the base element, bears a reflection coating, which can be designed for EUV radiation or for DUV radiation. The mirror surfaces are arranged next to one another to substantially fill the surface area. Between directly adjacent mirror elements there is a gap delimited by side surfaces of the adjoining mirror substrates to ensure a collision-free relative movement of the adjacent mirror elements.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
35.
DEVICE AND METHOD FOR OPERATING A BENDING BEAM IN A CLOSED CONTROL LOOP
The present invention relates to a device for operating at least one bending beam in at least one closed control loop, wherein the device has: (a) at least one first interface designed to receive at least one controlled variable of the at least one control loop; (b) at least one programmable logic circuit designed to process a control error of the at least one control loop using a bit depth greater than the bit depth of the controlled variable; and (c) at least one second interface designed to provide a manipulated variable of the at least one control loop.
The present invention refers to a method for determining at least one optical property of at least one deposition material used for a lithographic mask which comprises the steps: (a) determining a height value of the at least one deposition material deposited on a substrate for each of at least three different deposition heights of the deposition material, wherein the at least three different deposition heights are in a nanoscale range; (b) determining a reflectivity value of the at least one deposition material for each of the at least three different deposition heights, wherein determining the reflectivity values comprises using photons generated by an optical inspection system; and (c) determining the at least one optical property of the at least one deposition material by adapting simulated reflectivity data to the measured reflectivity values for each of the at least three different deposition heights.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
An optical element (M2) for reflecting radiation includes: a substrate (31) formed from quartz glass or from a glass ceramic and having a first part-body (26a) and a second part-body (26b) that are joined along a bonding face (27) by hot bonding, a plurality of cooling channels (25) that run within the substrate (31) in the region of the bonding face (27) and are separated from one another by lands (35), and a reflective coating (33) applied to a surface (32) of the first part-body. In the substrate, a respective cooling channel (25) has a channel wall (36) which, at at least one position (PS) adjoining a respective land (35), has a zero crossing temperature (TZC,S) that deviates by less than 3.0 K from a zero crossing temperature (TZC,M) at a middle (M) of the land. Also disclosed is an associated optical arrangement e.g. for an EUV lithography system.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
38.
APPARATUS FOR ANALYSING AND/OR PROCESSING A SAMPLE WITH A PARTICLE BEAM AND METHOD
What is proposed is an apparatus for analysing and/or processing a sample with a particle beam, comprising:
What is proposed is an apparatus for analysing and/or processing a sample with a particle beam, comprising:
a providing unit for providing the particle beam; and
What is proposed is an apparatus for analysing and/or processing a sample with a particle beam, comprising:
a providing unit for providing the particle beam; and
a test structure attached to the providing unit;
What is proposed is an apparatus for analysing and/or processing a sample with a particle beam, comprising:
a providing unit for providing the particle beam; and
a test structure attached to the providing unit;
wherein the apparatus is configured for implementing an etching process and/or a deposition process on the test structure using the particle beam.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
39.
INTERCHANGEABLE-OBJECT HOLDING APPARATUS FOR AN EUV METROLOGY SYSTEM, METHOD FOR CALIBRATING SUCH AN INTERCHANGEABLE-OBJECT HOLDING APPARATUS AND EUV METROLOGY SYSTEM HAVING SUCH AN INTERCHANGEABLE-OBJECT HOLDING APPARATUS
An interchangeable-object holding apparatus for an EUV metrology system serves for holding and providing an interchangeable object, which is intended to be used interchangeably within the EUV metrology system. An interchangeable-object holder is drivably displaceable via at least one holding drive. A calibration device serves for calibrating a relative position of the interchangeable object in the interchangeable-object holder with respect to a calibration object of the interchangeable-object holding apparatus. The calibration device has a plurality of holder abutment bodies, secured to the interchangeable-object holder, and a plurality of calibration-object counter-abutment bodies, secured to the calibration object. At least one contact sensor of the calibration device serves for detecting a contact between the respective holder abutment body and the respective calibration-object counter-abutment body. An evaluation unit is in signal communication with the holder drive and the contact sensor. The evaluation unit serves for determining the relative position of the interchangeable object in the interchangeable-object holder with respect to the calibration object from captured position and measurement data of the holder drive and of the contact sensor. The result is an interchangeable-object holding apparatus with which the interchangeable-object holder can be positioned relative to the calibration object with a specified level of accuracy and with less metrological complexity of the calibration device compared with the prior art.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
40.
EUV LITHOGRAPHY SYSTEM COMPRISING A GAS-BINDING COMPONENT IN THE FORM OF A FOIL
An EUV lithography system (1) including: a housing (26), at least one reflective optical element (M1, M2) disposed within an interior (27) of the housing (26), and at least one gas-binding component (31a-c) having a gas-binding material for binding gaseous contaminating substances (29) present in the interior (27). The gas-binding component is formed as a foil (31a-c) and a coating (33, 33a,b) containing the gas-binding material is applied on at least one side (32a, 32b) of the foil (31a-c).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A DUV lithography apparatus comprises: a light source for generating DUV radiation at at least one operating wavelength in the DUV wavelength range; a photomask; and an optical element which transmits the DUV radiation and is spaced apart from the photomask and to which an absorbent coating is applied. The absorbent coating has absorbent microstructures which cover a surface region to which the absorbent coating is applied with a surface area proportion of less than 0.1% and optionally more than 0.01%.
This disclosure relates to a method for producing a mirror of a microlithographic projection exposure apparatus, a first mirror part and a second mirror part being provided, which are in contact in the region of a first connecting surface of the first mirror part and a second connecting surface of the second mirror part. For forming a durable connection between the first mirror part and the second mirror part, the first mirror part and the second mirror part are heated up to a holding temperature of at least 400° C. and are kept at the holding temperature during a holding time. After the holding time has elapsed, the first mirror part and the second mirror part are cooled down to a first cooling temperature at a first cooling rate of less than or equal to 100 K/h.
An optical system for a projection exposure apparatus comprises: a first component; a second component which is actuable within an actuation region relative to the first component; and an end stop device which permits a movement of the second component relative to the first component within the actuation region and which blocks it outside the actuation region. The end stop device comprises a bending element having a stiffness which increases abruptly upon reaching a limit of the actuation region to block the movement of the second component relative to the first component.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
44.
METHOD AND APPARATUS FOR REPAIRING A DEFECT OF A SAMPLE USING A FOCUSED PARTICLE BEAM
The present invention relates to a method for repairing at least one defect of a sample using a focused particle beam, comprising the steps of: (a) producing at least one first local, electrically conductive sacrificial layer on the sample, wherein the first local, electrically conductive sacrificial layer has a first portion and at least one second portion, wherein the first portion is adjacent to the at least one defect and wherein the first portion and the at least one second portion are electrically conductively connected to one another; and (b) producing at least one first reference mark on the at least one second portion of the first local, electrically conductive sacrificial layer for the purposes of correcting a drift of the focused particle beam in relation to the at least one defect while the at least one defect is being repaired.
A positioning system for moving or positioning a moveable object, the system including: a dynamic support system including a reaction mass, a first support, a first spring system to support the reaction mass from the first support, a second support, a second spring system to support the first support from the second support, and a damping system to provide damping to the dynamic support system; and an actuator for generating a driving force between the moveable object and the reaction mass for moving or position the object, wherein a first eigenfrequency and a second eigenfrequency of the dynamic support system are substantially the same.
F16F 15/08 - Suppression des vibrations dans les systèmes non rotatifs, p.ex. dans des systèmes alternatifs; Suppression des vibrations dans les systèmes rotatifs par l'utilisation d'organes ne se déplaçant pas avec le système rotatif utilisant des moyens élastiques avec ressorts en caoutchouc
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
46.
OPTICAL ELEMENT, PROJECTION OPTICAL UNIT AND PROJECTION EXPOSURE APPARATUS
An optical element for a projection exposure apparatus comprises a mirror body having an optically active surface. The mirror body comprises a base portion which carries a sensor system. The mirror body comprises an edge portion on which actuator connectors for connecting actuators to the optical element are provided. The base portion has greater stiffness than the edge portion. A stiffening rib structure is attached to the back side of the edge portion, which faces away from the optically active surface. The rib structure supports the edge portion on the base portion.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
47.
METHOD FOR DEPOSITING A LAYER OPTICAL ELEMENT, AND OPTICAL ASSEMBLY FOR THE DUV WAVELENGTH RANGE
A method for depositing a layer (2) of a coating which is reflective or anti-reflective to DUV radiation onto a surface (3a) of a substrate (3) for a DUV optical element includes: transferring a coating material (M) into the gas phase in a coating source (4′), moving the substrate relative to the coating source along a predetermined movement path (5), and varying a coating rate (RB) and/or a rotation speed (ω(t)) of a spin axis (7) of the substrate during the movement along the movement path. A covering element (6) is arranged between the coating source (4′) and the surface and covers the surface at least partially during the movement of the substrate. Also disclosed is an optical element for the DUV wavelength range, with a substrate and a reflective or anti-reflective coating (B) applied to the substrate, having at least one layer deposited by the disclosed method.
A projection exposure apparatus for semiconductor lithography comprises a connecting element for connecting two components of the projection exposure apparatus. The connecting element comprises at least two mechanical decoupling elements, which each decouple in two mutually orthogonal rotational degrees of freedom. Overall a decoupling in all three rotational degrees of freedom is achieved by the at least two decoupling elements.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A connection arrangement for connecting a first component and a second component of an imaging device for micro lithography, such as for using light in the extreme UV range (EUV), includes a connection unit having a first contact portion, a second contact portion and a coupling portion.
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
G02B 17/06 - Systèmes catoptriques, p.ex. systèmes redressant et renversant une image utilisant uniquement des miroirs
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A method for operating an optical system comprises the following steps: (a) using sensors to measure values of at least one physical quantity at a plurality of different sensor positions in the optical system; and (b) diagnosing an existing or expected malfunction of the optical system on the basis of this measurement. The values measured in step (a) are used to perform model-based determination of at least one parameter at other positions, none of which correspond to the sensor positions. The diagnosis in step (b) also being carried out on the basis of this model-based determination.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
51.
TEMPERATURE MEASURING DEVICE, LITHOGRAPHY APPARATUS AND METHOD FOR MEASURING A TEMPERATURE
A temperature measuring device for measuring a temperature at or in an optical system of a lithography apparatus comprises: an activation source for generating a measurement current or a measurement voltage between a first and a second connection point of the activation source; a plurality of temperature resistors which comprise at a temperature resistor and a measurement temperature resistor, each temperature resistor between first and second line nodes; a first switching unit for selectively connecting the first connection point to a first line node; a voltage detection unit for detecting a voltage at the temperature resistors; a first line which electrically connects the second line node of the at least one reference temperature resistor and the second line node of the at least one measurement temperature resistor to a first connection point of the voltage detection unit; and a temperature determination unit.
G01K 7/20 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs l'élément étant une résistance linéaire, p.ex. un thermomètre à résistance de platine dans un circuit spécialement adapté, p.ex. un circuit en pont
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
G01R 19/155 - Indication de l'existence d'une tension
G01R 27/02 - Mesure de résistances, de réactances, d'impédances réelles ou complexes, ou autres caractéristiques bipolaires qui en dérivent, p.ex. constante de temps
52.
APPARATUS AND METHOD FOR CHARACTERIZING A MICROLITHOGRAPHIC MASK
The invention relates to an apparatus and a method for characterizing a microlithographic mask. According to one aspect, an apparatus according to the invention comprises at least one light source which emits coherent light, an illumination optical unit which produces a diffraction-limited light spot on the mask from the coherent light of the at least one light source, a scanning device, by use of which it is possible to implement a scanning movement of the diffraction-limited light spot relative to the mask, a sensor unit, and an evaluation unit for evaluating the light that is incident on the sensor unit and has come from the mask, an output coupling element for coupling out a portion of the coherent light emitted by the at least one light source, and an intensity sensor for capturing the intensity of this output coupled portion.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01N 21/956 - Inspection de motifs sur la surface d'objets
53.
BEARING SYSTEM, LITHOGRAPHY SYSTEM, AND METHOD FOR PRODUCING A BEARING SYSTEM
A bearing system (200) for supporting a first component (202) on a second component (204) of a lithography system (100A, 100B) has an adhesive (212, 212′) which secures the first and second component (202, 204) against each other. The first component (202) has at least two surfaces (216) inclined towards each other and a first adhesive surface (218) which connects the two surfaces (216), and the second component (204) has at least one ball section (220) which is received between the at least two mutually inclined surfaces (216). The ball section includes a ball surface section (226) and a second adhesive surface (230), which is arranged between two sub-sections (232, 234) of the ball surface section (226) when viewed in cross-section, and the adhesive (212, 212′) is arranged between the first and the second adhesive surface (218, 230).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
54.
METHOD, APPARATUS AND COMPUTER PROGRAM FOR PROCESSING A SURFACE OF AN OBJECT
Described are a method for processing a surface of an object, in particular of a lithographic mask, an apparatus for carrying out such a method and a computer program containing instructions for carrying out such a method.
Described are a method for processing a surface of an object, in particular of a lithographic mask, an apparatus for carrying out such a method and a computer program containing instructions for carrying out such a method.
A method for processing a surface of an object, in particular of a lithographic mask, includes the following steps: (a.) supplying a gas mixture containing at least a first gas and a second gas to a reaction site at the surface of the object; (b.) inducing a reaction, which includes at least a first partial reaction and a second partial reaction, at the reaction site by exposing the reaction site to a beam of energetic particles in a plurality of exposure intervals, wherein the first partial reaction is promoted primarily by the first gas and the second partial reaction is promoted primarily by the second gas, and wherein a gas refresh interval lies between the respective exposure intervals; (c.) setting a first time duration for the gas refresh interval, as a result of which the process rate of the first partial reaction and the process rate of the second partial reaction are present; (d.) setting a second time duration for the gas refresh interval, which brings about a relative increase in the process rate of the first partial reaction in comparison with the process rate of the second partial reaction.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
A method of depositing an outer layer (35) on a surface (36) of a reflective optical element (30) for the EUV wavelength range, wherein the depositing is effected in at least one macro cycle (37). The macro cycle (37) includes: at least partly depositing the outer layer (35) with an atomic layer deposition (ALD) process in at least one ALD cycle and partly back-etching the outer layer (35). Also disclosed is a reflective optical element (30) for the extreme ultraviolet (EUV) wavelength range which includes a surface (36) having an outer layer (35), wherein the outer layer (35) is deposited by the above-described method, and to an EUV lithography system having at least one such reflective optical element (30).
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
A projection exposure apparatus for semiconductor lithography includes component having a fluid channel and a device for providing a fluid for flowing through the fluid channel. The fluid channel is connected to the device via a supply line and an outgoing line. The supply line and the outgoing line are connected to one another in parallel with the fluid channel via a short circuit.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
57.
METHOD AND DEVICE FOR QUALIFYING A MASK OF A LITHOGRAPHY SYSTEM
A method for qualifying a mask for a lithography system, the mask having measurement points for detecting critical dimensions of the mask, comprising: first detection of critical dimensions of the mask at the measurement points, the first detection taking place sequentially and the duration of the first detection defining a measurement time period; determining reference measurement points from the measurement points, the number of reference measurement points being less than the number of measurement points; second detection of the at least one critical dimension of the mask at the reference measurement points; determining a deviation between the first and the second detected critical dimension at each of the reference measurement points; and applying a determined temporal profile of the correction factor to the at least one critical dimension to obtain a corrected critical dimension of the mask, and also a corresponding device for qualifying a mask for a lithography system.
G03F 1/72 - Réparation ou correction des défauts dans un masque
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
58.
METHOD FOR ANALYZING DEFECTS OF A STRUCTURED COMPONENT
An analysis of the defects of a structured component includes a check of a local deviation between an actual structure dimension of the component and a target structure dimension of the component. In this context, the local deviation is checked at a location of a test path along a deviation coordinate which extends across the test path. The test is repeated at a plurality of different test path locations within a test region of the test path. A summed local deviation between the actual structure dimension and the target structure dimension over the test region is determined. The local deviation is compared with a local deviation tolerance value. The summed local deviation is compared with a summation deviation tolerance value. This results in a defect analysis with enhanced significance, which is implementable using a metrology system in particular.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention relates to a device (100) for supporting one or more MEMS components (160), comprising a base component (110), which substantially consists of a first material with a first coefficient of expansion α1, an interposer (120), which is integrally bonded to the base component (110) in one or more first connection regions (140) and substantially consists of a second material with a second coefficient of expansion α2, and a support substrate (130), which is integrally bonded to the interposer (120) in one or more second connection regions (150) and substantially consists of a third material with a third coefficient of expansion α3, wherein the support substrate (130) is configured to support the one or more MEMS components (160), and for the coefficients of expansion the following holds true: α1>α2≥α3, preferably α1>α2=α3. The invention also relates to a system (105) comprising a device (100) according to the invention and the one or more MEMS components (160), and to a method for producing a device (100) according to the invention.
An optical apparatus for a lithography system has at least one optical element comprising an optical surface. The optical apparatus also has one or more actuators for deforming the optical surface. The optical element comprises a strain gauge device for determining the deformation of the optical surface. The gauge device comprises: a) at least one path length device for generating a measurement spectrum of a measurement radiation, wherein the path length device comprises a grating device for the measurement radiation and/or a resonator device for the measurement radiation; and/or b) at least one waveguide, wherein the at least one waveguide and/or the at least one grating device and/or the at least one resonator device are formed by the substrate element.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
An imaging optical unit comprises a plurality of minors for imaging an object field into an image field. The imaging optical unit has an image-side numerical aperture greater than 0.55. Each mirror is configured so that it can be measured by a testing optical unit having at least one DOE with a predetermined maximum diameter for test wavefront generation. For the complete measurement of all reflection surfaces of the minors, a maximum number of DOEs of the testing optical unit and/or a maximum number of DOE test positions of the at least one DOE of the testing optical unit comes into play, which is no more than five times the number of minors in the imaging optical unit. The result is an imaging optical unit in which a testing-optical measurement remains manageable even in the case of a design with an image-side numerical aperture which is relatively large.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 17/06 - Systèmes catoptriques, p.ex. systèmes redressant et renversant une image utilisant uniquement des miroirs
An imaging optical unit comprises a plurality of mirrors for imaging an object field in an object plane into an image field in an image plane. An image-side numerical aperture is greater than 0.55. A ratio between an object/image offset and a meridional transverse direction is at least 0.5. A ratio between a working distance between the object plane and a reflection portion, closest to the object plane, of one of the mirrors and the meridional transverse dimension is at least 0.05. The working distance is at least 270 mm. This can yield an imaging optical unit, the use of which is relatively manageable in a projection exposure apparatus, such as for EUV projection lithography.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A method for qualifying a mask for use in lithography is proposed. The method includes the following steps: a provision of an apparatus for qualifying a mask, the apparatus comprising an optical system and an evaluation and control device; a detection of at least one first phase difference of light at the mask by use of the optical system and the evaluation and control device; loading the mask; detecting at least one second phase difference of light at the mask by use of the optical system and the evaluation and control device; and implementing a comparison of the first phase difference with the second phase difference by use of the evaluation and control device.
A component for a projection exposure apparatus for semiconductor lithography, comprises an optical element and an actuator, which are force-fittingly connected to each other. The actuator at least locally deforms the optical element. The actuator can be configured to minimize the loss in rigidity at the peripheries delimiting the actuator on the imaging quality. A method for designing a component of projection exposure apparatus is provided.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The present application relates to a method for characterizing a shielding element of a particle beam device for shielding an electric field between a sample position and a particle beam source. The method comprises positioning a means for characterizing the shielding element on a side of the shielding element which is facing the sample position.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
H01J 37/09 - Diaphragmes; Ecrans associés aux dispositifs électronoptiques ou ionoptiques; Compensation des champs perturbateurs
66.
Microelectromechanical Apparatus with Heating Element
The invention relates to a microelectromechanical apparatus (100, 200) comprising one or more microelectromechanical devices (130) each having a mirror element (134), an actuator (132) for moving the respective mirror element (134), and a heating element (138, 240) for heating the respective mirror element (134), wherein the microelectromechanical apparatus (100) comprises one or more temperature sensors (135, 145, 210, 212) and an electronic system (125, 225), wherein the control electronic system (125, 225) is configured to determine a temperature value of the respective mirror element (134) using the one or more temperature sensors (135) for each mirror element (134), and the electronic system (125, 225) is further configured to adjust a heating power for each of the heating elements (138, 240). The invention further relates to an illumination optical unit (172), to an illumination system (174) and to a projection exposure apparatus (170), each having a microelectromechanical apparatus (100, 200) according to the invention, and to a method for controlling temperatures of a microelectromechanical apparatus (100, 200) in a closed-loop.
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
67.
Method for Operating an Optical Component, and Optical Component
The invention relates to a method for operating an optical component (100) having a mirror element (20), a substrate (30) for carrying the mirror element (20), an actuator device (40) for tilting the mirror element (20) about one or two tilt axes (28), which actuator device has a first actuator electrode structure (42) and a second actuator electrode structure (44), and a sensor device (50) for detecting a tilt angle (θ) of the mirror element (20). The first actuator electrode structure (42) in this case comprises a plurality of first active actuator electrodes (421) and at least one first passive actuator electrode (422). The second actuator electrode structure (44) in this case comprises a plurality of second active actuator electrodes (441) and at least one second passive actuator electrode (442). At least one of the first active actuator electrodes (421) is subjected to a first voltage (U1) and at least one of the second active actuator electrodes (442) is subjected to a second voltage (U2). In order to tilt the mirror element (20), the first and the second voltage (U1, U2) are changed with different rates of change.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
68.
SEGMENTATION OR CROSS SECTIONS OF HIGH ASPECT RATIO STRUCTURES
A method identifies ring structures in pillars of high aspect ratio (HAR) structures. For segmentation of rings, a machine learning-logic is used. A two-step training method for the machine learning logic is described.
An optical apparatus for a lithography system comprises at least one optical element comprising an optical surface. The optical apparatus also comprises one or more actuators for deforming the optical surface. A strain gauge device is provided for determining the deformation of the optical surface. The strain gauge device comprises at least one optical fiber that maintains polarization.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01L 1/22 - Mesure des forces ou des contraintes, en général en faisant usage des cellules électrocinétiques, c. à d. des cellules contenant un liquide, dans lesquelles un potentiel électrique est produit ou modifié par l'application d'une contrainte en utilisant des jauges de contrainte à résistance
G01L 1/24 - Mesure des forces ou des contraintes, en général en mesurant les variations des propriétés optiques du matériau quand il est soumis à une contrainte, p.ex. par l'analyse des contraintes par photo-élasticité
G02B 6/293 - Moyens de couplage optique ayant des bus de données, c. à d. plusieurs guides d'ondes interconnectés et assurant un système bidirectionnel par nature en mélangeant et divisant les signaux avec des moyens de sélection de la longueur d'onde
G02B 6/38 - Moyens de couplage mécaniques ayant des moyens d'assemblage fibre à fibre
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
70.
METHOD AND APPARATUS FOR REMOVING A PARTICLE FROM A PHOTOLITHOGRAPHIC MASK
The present application relates to a method for removing a particle from a photolithographic mask, including the following steps: (a) positioning a manipulator, which is movable relative to the mask, in the vicinity of the particle to be removed; (b) connecting the manipulator to the particle by depositing a connecting material on the manipulator and/or the particle from the vapor phase; (c) removing the particle by moving the manipulator relative to the photolithographic mask; and (d) separating the removed particle from the manipulator by carrying out a particle-beam-induced etching process which removes at least a portion of the manipulator.
G03F 1/82 - Procédés auxiliaires, p.ex. nettoyage ou inspection
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
71.
MEASUREMENT DEVICE FOR INTERFEROMETRIC MEASUREMENT OF A SURFACE SHAPE
A measurement apparatus (10) for interferometrically measuring a shape of a surface (12) of a test object (14) in relation to a reference shape includes a diffractive optical element (30) generating a test wave (32) from measurement radiation (22), whereas a wavefront of the test wave is adapted to a target shape of the surface of the test object and the target shape is configured as a first non-spherical surface, and a reference element (38) with a reference surface (40) having the reference shape, the reference shape being configured as a further non-spherical surface and the reference element including a low thermal expansion material with a mean coefficient of thermal expansion having an absolute value of no more than 200×10−6 K−1 in the temperature range from 5° C. to 35° C.
A method for particle beam-induced processing of a defect of a microlithographic photomask, including the steps of:
a) providing an image of at least a portion of the photomask,
b) determining a geometric shape of a defect in the image as a repair shape, with the repair shape comprising a number n of pixels,
c) subdividing, in computer-implemented fashion, the repair shape into a number k of sub-repair shapes, with an i-th of the k sub-repair shapes having a number mi of pixels, which are a subset of the n pixels of the repair shape,
d) providing an activating particle beam and a process gas at each of the mi pixels of a first of the sub-repair shapes for the purposes of processing the first of the sub-repair shapes,
e) repeating step d) for the first of the sub-repair shapes over a number j of repetition cycles, and
f) repeating steps d) and e) for each further sub-repair shape.
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p.ex. réparation ou correction de défauts par un faisceau d'ions focalisé
A heating arrangement, for example for use in a microlithographic projection exposure apparatus, comprises: at least one beam shaping unit for beam shaping of the electromagnetic radiation steered from a radiation source to the at least one optical element; and a sensor arrangement having at least one intensity sensor. The at least one beam shaping unit comprises at least one microstructured element for steering some the electromagnetic radiation to the sensor arrangement when the heating arrangement is in operation. Methods are provided.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 27/10 - Systèmes divisant ou combinant des faisceaux
74.
DEVICE FOR IMAGING AND PROCESSING A SAMPLE USING A FOCUSED PARTICLE BEAM
The present application relates to a device for imaging and processing a sample using a focused particle beam, comprising: (a) at least one particle source which is configured to create a particle beam in an ultrahigh vacuum environment; (b) at least one sample chamber which serves to accommodate the sample and which is configured to image the sample in a high vacuum environment and process the sample in a medium vacuum environment; (c) at least one column which is arranged in a high vacuum environment and which has at least one particle-optical component configured to shape a focused particle beam from the particle beam and direct said focused particle beam at the sample; (d) at least one detection unit which is arranged within the at least one column and which is configured to detect particles emanating from the sample; (e) at least one gas line system which terminates at the outlet of the focused particle beam from the column and which is configured to locally provide at least one process gas at the sample with a pressure such that the focused particle beam is able to induce a particle beam-induced local chemical reaction for processing the sample; and (f) at least one pressure adjustment unit through which the particle beam and the particles emanating from the sample pass and which is configured to limit a pressure increase caused at the at least one detection unit as a result of processing the sample to a factor of 10 or less, preferably to a factor of 5 or less, more preferably to a factor of 3 or less, and most preferably to a factor of 2 or less, without impeding access of the particles emanating from the sample to the at least one detection unit.
The invention relates to a method and an apparatus for characterizing a microlithography mask. In one aspect, in a method according to the invention, the mask to be characterized is illuminated with light from a light source via an illumination optics unit, said light having a wavelength of less than 30 nm, wherein light that passes in a used beam path from the light source via the mask to a sensor unit is evaluated, wherein, at least intermittently, a portion of the light emitted by the light source is outcoupled from the used beam path by use of a mirror array having a multitude of independently adjustable mirror elements, and wherein, intermittently by use of the mirror array, all light is outcoupled from the used beam path for establishment of a defined illumination time of the sensor unit.
The disclosed techniques relate to a method for depositing at least one layer composed of an ionically bonded solid on a substrate, comprising the following steps: converting a coating material to the gas phase and depositing the coating material converted to the gas phase on the substrate. The layer is irradiated with UV/VIS light during the deposition. The disclosed techniques also relate to an apparatus for implementing the disclosed method and optical elements and devices created using the disclosed method.
C23C 16/48 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement par irradiation, p.ex. par photolyse, radiolyse ou rayonnement corpusculaire
C23C 16/513 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c. à d. procédés de dépôt chimique en phase vapeur (CVD) caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des jets de plasma
C23C 16/52 - Commande ou régulation du processus de dépôt
A method for electron beam-induced processing of a defect of a microlithographic photomask, including the steps of:
a) providing an activating electron beam at a first acceleration voltage (EHT1) and a process gas in the region of a defect of the photomask for the purpose of repairing the defect, and
b) producing at least one image of the photomask, in which the region of the defect is captured at least in part, by providing an electron beam at at least one second acceleration voltage (e.g., EHT2, EHT3, EHT4) which differs from the first acceleration voltage (EHT1), for the purpose of determining a quality of the repaired defect.
G03F 1/20 - Masques ou masques vierges d'imagerie par rayonnement d'un faisceau de particules chargées [CPB charged particle beam], p.ex. par faisceau d'électrons; Leur préparation
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
H01J 37/30 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
78.
MEASUREMENT APPARATUS, METHOD FOR MEASURING BY INTERFEROMETRY, PROCESSING METHOD, OPTICAL ELEMENT AND LITHOGRAPHY SYSTEM
A measurement apparatus (1) for measuring a shape of a surface (2) of a test object (3), in particular an optical surface (2) by interferometry, has:
an illumination device (4) with an illumination source (5) for generating an illumination wave (6),
an interferometer device (7) with a splitting element (8) for splitting the illumination wave into a test wave (9) directed at the surface (2) and into a reference wave (10), and for combining the returning test wave (9), having interacted with the surface to be measured, with the reference wave (10),
a registration device (11) for registering and evaluating an interference pattern to determine a deviation of the measured surface shape from a target shape, and
a control device (12) configured to split the surface (2) to be measured into a plurality of individual areas (13) to be measured.
G01B 11/24 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes
G01B 11/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la rugosité ou l'irrégularité des surfaces
79.
CHARGED PARTICLE BEAM SYSTEM, METHOD OF OPERATING A CHARGED PARTICLE BEAM SYSTEM, METHOD OF RECORDING A PLURALITY OF IMAGES AND COMPUTER PROGRAMS FOR EXECUTING THE METHODS
The present invention relates to a charged particle beam system comprising a deflection subsystem configured to deflect a charged particle beam in a deflection direction based on a sum of analog signals generated by separate digital to analog conversion of a first digital signal and a second digital signal. The present invention further relates to a method of configuring the charged particle beam system so that each of a plurality of regions of interest can be scanned by varying only the first digital signal while the second digital signal is held constant at a value associated with the respective region of interest. The present invention further relates to a method of recording a ci plurality of images of the regions of interest at the premise of reduced interference due to charge accumulation.
A method for optical contact bonding components includes: placing a first surface (2a) of a first component (2) onto a second surface (3a) of a second component (3), to form an air film, and pressing the first surface against the second surface for optical contact bonding of the two components. Placing and pressing the first component is carried out by a robot (4). A laminar gas flow (10) is generated between the first and second surfaces with a ventilation device (9). A related apparatus (1) includes: the robot, configured to place the first surface onto the second surface thereby forming an air film. The robot presses the first surface against the second surface, to optically contact bond the first and second components. A holding device (8) holds the second component during the placing and pressing. A ventilation device generates the laminar gas flow between the first and second surfaces.
A method of producing an optical element for a lithography apparatus, comprising the steps of: a) detecting a height profile of a surface of a crystal substrate of the optical element, and b) ascertaining, using the height profile detected, an installed orientation (δ2, δ4, δ6) of the optical element in an optical system of the lithography apparatus in relation to a stress-induced birefringence on incidence of polarized radiation, where the installed orientation (δ2, δ4, δ6) is an orientation in relation to a rotation of the optical element about a center axis of the optical element that runs through the surface.
B24B 13/06 - Meulage de lentilles, l'outil ou la pièce étant commandé par des supports d'informations, p.ex. des gabarits, des bandes perforées ou magnétiques
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
An actuator-sensor device for an optics module of a lithography apparatus comprises: an actuator-sensor unit having an actuator and a sensor; a control unit electrically connected to the actuator-sensor unit; and a support element which on a first supporting side of same supports the actuator-sensor unit and which on a second supporting side of same supports the control unit, with the second supporting side being opposite to the first supporting side.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
83.
METHOD FOR PRODUCING A MIRROR OF A LITHOGRAPHY SYSTEM
A method for producing a mirror of a lithography system includes providing first and second mirror parts. Cooling channels having elongate cooling channel openings in the region of a first connecting surface of the first mirror part are formed in the first mirror part, and/or cooling channels having elongate cooling channel openings in the region of a second connecting surface of the second mirror part are formed in the second mirror part. The method also includes bringing together the first and second mirror parts so that initially a partial region of the first connecting surface and a partial region of the second connecting surface come into contact and form a common contact surface. The common contact surface is enlarged by continuing to bring the first and second mirror parts together in a direction along the longitudinal extents of the cooling channel openings.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
84.
METHOD FOR PRODUCING A MIRROR OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
A method for producing a mirror of a microlithographic projection exposure apparatus comprises providing a first mirror part having a first connecting surface and a second mirror part having a second connecting surface is provided. Cooling channels and/or auxiliary channels are formed in the second mirror part. The method also includes bringing together the first and second mirror parts so that initially a partial region of the first connecting surface and a partial region of the second connecting surface come into contact and form a common contact surface. The method further includes enlarging the contact surface by continuing to bring the first and second mirror parts together in a transverse direction with respect to the cooling channels or auxiliary channels.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A facet system for a lithography apparatus comprises: a facet element with an optically effective surface; a first piezoactuator arrangement for tilting the facet element about a first spatial direction; and a second piezoactuator arrangement for tilting the facet element about a second spatial direction oriented at right angles to the first spatial direction. The first piezoactuator arrangement and the second piezoactuator arrangement are arranged in a common plane which is spanned by the first spatial direction and the second spatial direction.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
86.
PROJECTION EXPOSURE APPARATUS FOR SEMICONDUCTOR LITHOGRAPHY
A projection exposure apparatus comprises an optical element. The optical element comprises a main body and an actuator for deforming an optically effective surface formed on the main body. The actuator is in a recess in the rear side of the main body.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/185 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs avec des moyens pour régler la forme de la surface du miroir
87.
MEASURING DEVICE FOR INTERFEROMETRICALLY MEASURING A SURFACE FORM
An apparatus (10) for interferometrically measuring a surface shape (12) of a test object (14) in relation to a reference shape (41) includes (a) a diffractive optical element (30) generating a test wave (32) from measurement radiation (22), whereas a wavefront (42) of the test wave is adapted to a target shape (43) of the surface (12) of the test object (14) and the target shape is configured as a first non-spherical surface, (b) a reference element (38) with a reference surface (40) having the reference shape (41), the reference shape being configured as a further non-spherical surface, (c) a first holder (60) configured to arrange the test object (14) in the beam path of the test wave (32) in a measurement configuration, and (d) a further holder (62) configured to arrange the reference element (38) in the beam path of a reference wave (34) in the measurement configuration.
G01B 11/24 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes
G01B 11/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la rugosité ou l'irrégularité des surfaces
88.
OPTICAL SYSTEM FOR A LITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
An illumination optical unit serves for use in a lithographic projection exposure apparatus. The illumination optical unit serves to guide illumination light from a light source toward an object field. A structured object is arranged in the object field. The illumination optical unit is embodied such that the object field illuminated by the illumination optical unit has a field extent along a first field coordinate and a field extent, shorter in comparison, along a second field coordinate perpendicular thereto. The illumination optical unit is embodied such that the illumination light which impinges on the object field is polarized in a polarization direction that extends parallel to the shorter field extent along the second field coordinate. This yields an illumination optical unit which, firstly, can offer a high structure resolution and, secondly, can impose manageable properties on the optical design.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
89.
MOUNTING FOR A LITHOGRAPHY SYSTEM, AND LITHOGRAPHY SYSTEM
A mounting for a lithography system comprises: a mounted element; a mounting element; and fastening elements which together secure the mounted element relative to the mounting element in at least one degree of freedom. A spacing is provided between the mounted element and the mounting element in the direction of the at least one degree of freedom, and each fastening element exerts a force on the mounted element exclusively in the direction of the at least one degree of freedom.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
90.
OPTICAL ELEMENT, OPTICAL ARRANGEMENT AND INSERT COMPONENT
An optical element for reflecting radiation, such as EUV radiation, comprises: a substrate; a reflective coating applied to a surface of the substrate; a plurality of cooling channels, which run in the substrate below the surface on which the reflective coating is applied; a distributor for connecting at least one cooling fluid inlet to the plurality of cooling channels; and a collector for connecting the plurality of cooling channels to at least one cooling fluid outlet. The distributor and/or the collector are integrated into at least one, optionally rod-like insert component which is introduced into at least one to cavity formed in the substrate. An optical arrangement, such as an EUV lithography system, comprises: at least one optical element formed in the manner described further above; and a cooling device which is designed for the flowing of a cooling fluid through the plurality of cooling channels.
G02B 7/18 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The invention proposes a method for processing a sample with a processing arrangement, comprising the steps of:
taking up a particle adhering on a sample surface of the sample with a measuring tip of the processing arrangement;
modifying a physical and/or chemical nature of a surface section on the sample or on a deposition unit for providing an activated surface section; and
moving the measuring tip into an interaction region of the activated surface section in which an attractive interaction acts between the particle taken up by the measuring tip and the activated surface section in order to transfer the particle from the measuring tip to the activated surface section.
Production techniques of a reflective optical element for the extreme ultraviolet wavelength range having a multilayer system reflective coating arranged on a substrate. The multilayer system has mutually alternating layers of at least two different materials with different real parts of their refractive indexes at a wavelength in the extreme ultraviolet wavelength range. A layer of one of the at least two materials forms a stack with the layer or layers arranged between the former and the closest layer of the same material with increasing distance from the substrate. At least one layer of the multilayer system is polished during or after deposition thereof, such roughness of the reflective optical element rises significantly less over all layers than in a corresponding reflective optical element with a reflective coating in the form of a multilayer system composed of unpolished layers. The multilayer system may have more than 50 layer stacks.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
B24B 13/00 - Machines ou dispositifs conçus pour meuler ou polir les surfaces optiques des lentilles ou les surfaces de forme similaire d'autres pièces; Accessoires à cet effet
G21K 1/06 - Dispositions pour manipuler des particules ou des rayonnements ionisants, p.ex. pour focaliser ou pour modérer utilisant la diffraction, la réfraction ou la réflexion, p.ex. monochromateurs
A system for a projection exposure apparatus which comprises a first component, a second component, and a decoupling device configured to decouple the second component in more than one degree of freedom from mechanical excitations of the first component. The decoupling device comprises first decoupling elements which have a positive stiffness. The decoupling device also comprises second decoupling elements, which have a negative stiffness. The decoupling device further comprises a third component, which is arranged between the first and second components.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
F16F 15/04 - Suppression des vibrations dans les systèmes non rotatifs, p.ex. dans des systèmes alternatifs; Suppression des vibrations dans les systèmes rotatifs par l'utilisation d'organes ne se déplaçant pas avec le système rotatif utilisant des moyens élastiques
F16F 15/03 - Suppression des vibrations dans les systèmes non rotatifs, p.ex. dans des systèmes alternatifs; Suppression des vibrations dans les systèmes rotatifs par l'utilisation d'organes ne se déplaçant pas avec le système rotatif utilisant des moyens électromagnétiques
94.
METHOD AND APPARATUS FOR EVALUATING AN UNKNOWN EFFECT OF DEFECTS OF AN ELEMENT OF A PHOTOLITHOGRAPHY PROCESS
The present invention relates to a method and an apparatus for determining at least one unknown effect of defects of an element of a photolithography process. The method comprises the steps of: (a) providing a model of machine learning for a relationship between an image, design data associated with the image and at least one effect of the defects of the element of the photolithography process arising from the image; (b) training the model of machine learning using a multiplicity of images used for training purposes, design data associated with the images used for training purposes and corresponding effects of the defects; and (c) determining the at least one unknown effect of the defects by applying the trained model to a measured image and the design data associated with the measured image.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G06V 10/75 - Appariement de motifs d’image ou de vidéo; Mesures de proximité dans les espaces de caractéristiques utilisant l’analyse de contexte; Sélection des dictionnaires
G06V 10/774 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant l’intégration et la réduction de données, p.ex. analyse en composantes principales [PCA] ou analyse en composantes indépendantes [ ICA] ou cartes auto-organisatrices [SOM]; Séparation aveugle de source méthodes de Bootstrap, p.ex. "bagging” ou “boosting”
A method for swapping an optical system, such as a DUV mirror, of a projection exposure apparatus, comprises: a) raising the optical system along a centre axis of the optical system so that mount struts of the optical system pass out of contact with frame struts of a frame carrying the optical system; b) rotating the optical system about the centre axis so that the mount struts are arranged between the frame struts; c) lowering the optical system along the centre axis; and d) shifting the optical system perpendicularly to the centre axis so that the optical system is moved out of a housing.
G21K 1/06 - Dispositions pour manipuler des particules ou des rayonnements ionisants, p.ex. pour focaliser ou pour modérer utilisant la diffraction, la réfraction ou la réflexion, p.ex. monochromateurs
G02B 27/62 - Appareils optiques spécialement adaptés pour régler des éléments optiques pendant l'assemblage de systèmes optiques
96.
GAS INJECTION SUBSYSTEM FOR USE IN AN INSPECTION SYSTEM TO INSPECT A SAMPLE BY USE OF CHARGED PARTICLES AND INSPECTION SYSTEM HAVING SUCH GAS INJECTION SUBSYSTEM
A gas injection subsystem for use in an inspection system serves to inspect a sample by use of charged particles. At least one gas duct of the gas injection subsystem guides a gas flow from a gas reservoir to a sample inspection region. The gas duct has in the vicinity of the sample inspection region a diameter which is less than 5 mm. At least one flow control valve of the gas injection subsystem controls the gas flow through the gas duct. The valve is switchable between an open valve state in which a nominal gas flow through the gas duct is enabled and a closed valve state in which the gas duct is closed to inhibit a gas flow through the gas duct. The valve is designed such that a switching time between the open and the closed state is 100 ms at most. A gas injection subsystem results which facilitates a reproducible gas injection to the sample inspection region.
An optical assembly has an optical element for influencing the beam path in a projection exposure apparatus and an actuator device for deforming the optical element. The actuator device has at least one photostrictive component and at least one light source. The photostrictive component is mechanically coupled to the optical element for the transmission of a tensile and/or compressive force in order to deform the optical element. The light source is configured for targeted illumination of the photostrictive component in order to induce the tensile and/or compressive force in the photostrictive component.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
98.
METHOD FOR REGISTERING STRUCTURES ON MICROLITHOGRAPHIC MASKS, COMPUTER PROGRAM PRODUCT AND MICROLITHOGRAPHIC METHOD
The invention relates to a method for registering structures on microlithographic masks comprising the comparison of a recorded measurement image of a mask and the target design underlying the mask, wherein the target design underlying the mask is converted into a simulated reference image that is directly comparable with the measurement image with the aid of an optical simulation, wherein the optical simulation is fully automatically differentiable in such a manner that a metric that is determined from the recorded measurement image and the reference image simulated in the forward mode and represents the differences allows in the backward mode a representation of the actual design of the mask that is directly comparable with the target design for the purpose of determining possible defects of the mask.
The invention relates to a method for registering structures on microlithographic masks comprising the comparison of a recorded measurement image of a mask and the target design underlying the mask, wherein the target design underlying the mask is converted into a simulated reference image that is directly comparable with the measurement image with the aid of an optical simulation, wherein the optical simulation is fully automatically differentiable in such a manner that a metric that is determined from the recorded measurement image and the reference image simulated in the forward mode and represents the differences allows in the backward mode a representation of the actual design of the mask that is directly comparable with the target design for the purpose of determining possible defects of the mask.
The invention furthermore relates to a corresponding computer program product and to the use of the above method in the course of a microlithographic process.
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p.ex. correction par deuxième itération d'un motif de masque pour l'imagerie
A field facet system for a lithography apparatus comprises: an optical element which comprises an elastically deformable facet portion having a light-reflecting optically active surface; and at least one actuating element for introducing a bending moment into the facet portion to deform the facet portion to change a radius of curvature of the optically active surface. The facet portion is curved in an arched manner in a plan view of the optically active surface. The rigidity of the facet portion as viewed along a longitudinal direction of the facet portion is variable so that a normal vector oriented perpendicularly to the optically active surface tilts exclusively about a spatial direction when the bending moment is introduced into the facet portion.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
100.
OPTICAL COMPONENT AND OPTICAL SYSTEM, IN PARTICULAR FOR MICROLITHOGRAPHY
An optical component comprises a first layer system exhibiting a first wavelength-dependent reflectivity curve when electromagnetic radiation impinges thereon, and at least one second layer system exhibiting a second wavelength-dependent reflectivity curve when electromagnetic radiation impinges thereon. The first layer system and the second layer system are arranged on different optical surfaces. The wavelength dependencies of the first and the second reflectivity curve at least partially compensate one another so that the relative deviation from a desired reflectivity curve which is linear or constant with respect to the wavelength is no more than 5% within the specified wavelength range for a resultant summated reflectivity for the first layer system and the at least one second layer system. An optical system, such as a microlithography projection exposure apparatus, can include such an optical component.
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