Provided is a voltage regulator capable of suppressing a current consumption in a non-regulation state with a simple circuit configuration. The voltage regulator includes an output transistor supplying an output voltage based on a control voltage, an error amplifier circuit supplying an amplified signal obtained by amplifying a difference between a voltage based on the output voltage and a reference voltage, a common source amplifier circuit supplying the control voltage to the output transistor based on the amplified signal, and a non-regulation state detection circuit supplying a detection signal to the common source amplifier circuit. The common source amplifier circuit includes a current control circuit including a plurality of parallel paths connecting between a control terminal of the output transistor and a power supply terminal, the plurality of parallel paths including a path to be closed in the non-regulation state and a path to be opened in the non-regulation state.
G05F 1/565 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final sensible à une condition du système ou de sa charge en plus des moyens sensibles aux écarts de la sortie du système, p.ex. courant, tension, facteur de puissance
2.
SEMICONDUCTOR DEVICE WITH REFERENCE VOLTAGE CIRCUIT
Provided is a semiconductor device with a reference voltage circuit including an enhancement type transistor having P-type polycrystalline silicon as a first gate electrode, and a depletion type transistor having N-type polycrystalline silicon as a second gate electrode, in which the enhancement type transistor has an impermeable film that is locally provided to cover the first gate electrode via an interlayer insulating film disposed on the first gate electrode, and a nitride film that has an opening portion which is provided larger than the first gate electrode and smaller than the impermeable film, and is provided to cover a periphery of the impermeable film, and the depletion type transistor has a nitride film that is directly provided on an interlayer insulating film disposed on the second gate electrode and covers the depletion type transistor without a gap.
G05F 3/24 - Régulation de la tension ou du courant là où la tension ou le courant sont continus utilisant des dispositifs non commandés à caractéristiques non linéaires consistant en des dispositifs à semi-conducteurs en utilisant des combinaisons diode-transistor dans lesquelles les transistors sont uniquement du type à effet de champ
H01L 27/088 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type comprenant uniquement des composants à effet de champ les composants étant des transistors à effet de champ à porte isolée
H01L 29/49 - Electrodes du type métal-isolant-semi-conducteur
Provided is a semiconductor storage apparatus having a storage apparatus driving circuit which can efficiently perform screening tests for the semiconductor memory device. A semiconductor memory device includes a wright-voltage supply circuit, a wright-voltage switching circuit, a bit line discharge control circuit, a bit line discharge circuit, and a memory array. The wright-voltage supply circuit is connected to the memory array through the wright-voltage switching circuit. The bit line discharge control circuit is connected to the memory array through the bit line discharge circuit.
A power generation sensor includes: a housing body in which a module receiving a generated power is housed; a module with a first connector electrode disposed on a front face; a second connector electrode disposed on an inner face of the housing body connected to the first connector electrode; and a power generation electrode connected to the second connector electrode.
A power generation sensor, generating electric power using a liquid, includes: a base; a positive electrode for power generation disposed in a first direction of the base and containing a first material; a negative electrode for power generation disposed in the first direction and containing a second material; a first connector electrode connected to a one-side end of the positive electrode in the first direction and to a sensor module; and a second connector electrode connected to a one-side end of the negative electrode in the first direction and to the sensor module. The first connector electrode contains the first material and has a larger width in a second direction orthogonal to the first direction than the positive electrode in the second direction. The second connector electrode contains the second material and has a larger width in the second direction than the negative electrode in the second direction.
G01V 3/08 - Prospection ou détection électrique ou magnétique; Mesure des caractéristiques du champ magnétique de la terre, p.ex. de la déclinaison ou de la déviation fonctionnant au moyen de champs magnétiques ou électriques produits ou modifiés par les objets ou les structures géologiques, ou par les dispositifs de détection
6.
ELECTROSTATIC PROTECTION CIRCUIT AND SEMICONDUCTOR DEVICE
An electrostatic protection circuit and a semiconductor device include: a first diode whose anode is connected to a signal terminal; a second diode whose cathode is connected to a cathode of the first diode and whose anode is connected to a GND terminal; and a depletion type MOS transistor connected in parallel with the first diode.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H02H 9/04 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension
A battery voltage monitoring device includes a clock generation circuit; a switch circuit including first and second N-type transistors and first and second P-type transistors of which sources and back gates are connected to each other, with a drain of one of the first N-type transistor and the first P-type transistor connected to the other source, one source connected to a signal input unit, and the other drain connected to a signal output unit, and a source of one of the second N-type transistor and the second P-type transistor connected to the other source, one source connected to a signal input unit, and the other drain connected to a signal output unit; a first generation circuit generating first and second control signals for the first and second P-type transistors, respectively; and a second generation circuit generating third and fourth control signals for the first and second N-type transistors, respectively.
G01R 31/3835 - Dispositions pour la surveillance de variables des batteries ou des accumulateurs, p.ex. état de charge ne faisant intervenir que des mesures de tension
H02J 7/00 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries
8.
VOLTAGE DETECTION CIRCUIT, CHARGE CONTROL CIRCUIT, CHARGE AND DISCHARGE CONTROL CIRCUIT, AND SEMICONDUCTOR DEVICE
A voltage detection circuit, a charge control circuit, a charge and discharge control circuit, and a semiconductor device are provided. The voltage detection circuit includes: an input port; a plurality of transistors connected in series and including at least an input transistor including a gate connected to the input port, a source connected to a first power supply terminal, and a drain, and a first transistor including a drain connected to a second power supply terminal, a gate, and a source connected to the gate of the first transistor; and an output port configured to be one of connection points of the plurality of transistors.
Provided is a semiconductor device. The semiconductor device includes a first circuit that includes a plurality of fixed resistance elements connected in series; a second circuit that includes a plurality of variable resistance elements connected in series and that is connected in series to the first circuit; a first cover portion that is provided on an upper layer side of the first circuit and that covers the first circuit; and a second cover portion that is provided on an upper layer side of the second circuit and that covers the second circuit. The first cover portion included two or more first metal films electrically connected, correspondingly, to units having any number of the fixed resistance elements, and the second cover portion includes a second metal film electrically connected to the plurality of the variable resistance elements.
H01L 27/08 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type
A bipolar transistor is capable of reducing variations in electrical characteristics. A bipolar transistor 100 includes: a collector region 150 which is a predetermined region in a P-type semiconductor substrate 110; a base region 140 which is formed within the collector region 150 and is an N-type well region; a polysilicon 130 formed on the base region 140 via an insulating film 131 and having an outer periphery, as viewed in a plan view, in a rectangular ring shape; and a P-type emitter region 120 surrounded by the polysilicon 130 and formed within the base region 140. The polysilicon 130 includes an extension portion 130a extending inside a contact region 141 of the base region 140 and electrically connected to the base region 140.
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
The ESD protection circuit includes an off transistor including: a P-type semiconductor substrate; an N-type well region formed in an upper portion of the semiconductor substrate; an N-type drain region formed in an upper portion of the well region and having a higher impurity concentration than the well region; an N-type source region formed apart from the drain region in the upper portion of the well region and having a higher impurity concentration than the well region; a gate insulating film formed between the drain region and the source region; a gate electrode formed on a surface of the gate insulating film; and a P-type high-concentration region formed in the upper portion of the well region to be in contact with at least the drain region near a corner portion of a channel region and having a higher impurity concentration than the well region.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H02H 9/00 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion
H02H 9/04 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension
The present invention provides a ΔΣ AD converter and a sensor device having a small circuit scale and high conversion accuracy. A ΔΣ AD converter includes a ΔΣ AD modulator, an accumulator, a counter, an adjustment value storage part, a first adder, a cumulative value latch part, and a control circuit. The control circuit outputs to the adjustment value storage part a signal designating a temperature range according to the adjustment cumulative value received from the first adder in a case where the count value received from the counter reaches a predetermined value. The adjustment value storage part outputs the adjustment value of the offset value and the adjustment value of the count value according to the signal to the first adder and the counter. The control circuit outputs the latch signal to the cumulative value latch part in response to completion of counting by the counter.
An ESD protection circuit is connected in parallel with an internal circuit operating at a predetermined operating voltage between a VDD terminal and a VSS terminal, and includes an NMOS transistor in which an N type high concentration drain region is connected to the VDD terminal and an N type high concentration source region is connected to the VSS terminal. A threshold voltage and a trigger voltage of a parasitic bipolar transistor of the NMOS transistor are higher than the operating voltage and lower than a breakdown voltage of the internal circuit and a breakdown voltage of a gate insulating film of the NMOS transistor.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H02H 9/04 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension
14.
SENSOR DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
A sensor device includes: a sensor element, outputting a signal; a first determination circuit, outputting an initialization signal containing a signal level corresponding to a determination result as to whether detection of a physical quantity has matched two consecutive times; a second determination circuit, including a counter which is able to, while initializing a count value if the detection of the physical quantity does not occur two consecutive times, continue counting if the detection of the physical quantity occurs two consecutive times until a set number of times is reached, the second determination circuit outputting an output latch signal containing a signal level corresponding to whether a consecutive match occurs until the set number of times is reached; and an output register, switching a signal level of an output signal supplied to an output terminal according to a change in the signal level of the output latch signal.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
A voltage fluctuation detection circuit includes: a source voltage decrease detection circuit configured to detect a decrease in voltage of a first power supply which outputs a first voltage and to output the result of detection as a voltage decrease detection signal using a second voltage which is lower than the voltage of the first power supply; an erroneous detection prevention circuit configured to detect an increase in voltage of the first power supply and to output the result of detection as a voltage increase detection signal using the second voltage; and a transistor configured to mask outputting of the voltage decrease detection signal in a period in which the increase in voltage of the first power supply is being detected based on the voltage increase detection signal.
An ESD protection circuit is connected between a VDD terminal and a Vss terminal and is connected in parallel with an internal circuit which operates at an operating voltage and is damaged at a damage voltage or higher to protect the internal circuit from electrostatic discharge. The ESD protection circuit includes ESD protection elements connected in series. The ESD protection elements are transistors, diode elements, or a combination thereof. A sum of current-voltage characteristics of the ESD protection elements at a voltage higher than the operating voltage is higher than the operating voltage and lower than the damage voltage, until reaching a discharge current value or higher capable of protecting the internal circuit.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
17.
CHARGE AND DISCHARGE CONTROL CIRCUIT AND BATTERY DEVICE INCLUDING THE SAME
A charge and discharge control circuit includes an external terminal voltage input port, a positive electrode power supply terminal, a negative electrode power supply terminal, a detector and an external terminal voltage detector connected to the external terminal voltage input port, and a control circuit. The external terminal voltage input port is connected to an external terminal via an external resistor. The positive electrode power supply terminal and the negative electrode power supply terminal are respectively connected to positive and negative electrodes of a secondary cell. The detector outputs a power-down detection signal to the control circuit in a case where the external terminal voltage input port receives a power-down control signal according to turn-on of an external FET, and outputs a power-down release signal to the control circuit in a case where the external FET is turned off and a charger is connected to the external terminal.
A current detection device includes a main busbar and a semiconductor chip. A detected current flows through the main busbar. The semiconductor chip is spaced apart from the main busbar. The semiconductor chip includes a branch busbar, a detection part, and an output part. The branch busbar is connected in parallel with the main busbar. The detection part is arranged adjacent to the branch busbar and detects a first magnetic field generated based on a branch current flowing from the main busbar to the branch busbar. The output part calculates and outputs a current value based on the first magnetic field detected by the detection part.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
19.
LAYOUT DESIGN SUPPORT APPARATUS, LAYOUT DESIGN SUPPORT METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A layout design support apparatus 100 determines, in a circuit element connected to a first external terminal P1 to which a first potential identification label is added, whether to short-circuit one terminal connected to the first external terminal P1 and another terminal based on a determination criterion according to element type information and breakdown voltage information, adds the first potential identification label to the circuit components on a path from the first external terminal P1 to the one terminal of the circuit element to identify a first equipotential region according to determining not to short-circuit, repeatedly performs determination for the circuit element connected to the another terminal and identifies the first equipotential region according to determining to short-circuit, and identifies a second equipotential region when receiving a second potential identification label to be added to a second external terminal P2.
G06F 30/398 - Vérification ou optimisation de la conception, p.ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
An electronic device with a boost circuit includes: a first capacitor including a first terminal connected to an input terminal and a second terminal connected to a reference potential terminal; a first rectification element; a second capacitor including a first terminal connected to the first terminal of the first capacitor through the first rectification element and a second terminal connected to the reference potential terminal; a voltage detection circuit including a voltage detection terminal connected to the first terminal of the second capacitor and a detection signal output terminal; and a boost circuit including a detection signal input terminal connected to the detection signal output terminal, a boost power input terminal connected to the first terminal of the first capacitor, and a boost power output terminal connected to a node between the first terminal of the second capacitor and the voltage detection terminal.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
Provided is a sensor having different sensitivities depending on the positions. A sensor 1 is a sensor for detecting the presence of a liquid, and includes a first electrode 11 and a second electrode 12. The first electrode and the second electrode each have a thread-like or band-like structure, and are arranged side by side in a direction intersecting a longitudinal direction. At least one of the first electrode and the second electrode includes a first portion 111 having a first surface area at a first position in the longitudinal direction, and includes a second portion 112 having a second surface area larger than the first surface area at a second position in the longitudinal direction different from the first position.
A61F 13/42 - Garnitures absorbantes, p.ex. serviettes ou tampons hygiéniques pour application externe ou interne au corps; Moyens pour les maintenir en place ou les fixer; Applicateurs de tampons avec un indicateur ou une alarme d'humidité
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
The present invention provides a Schmitt trigger circuit in which chattering does not occur in the output of the Schmitt trigger circuit even when it is connected to a communication bus without impedance matching and reflected noise is superimposed on the input signal. The Schmitt trigger circuit includes: a first signal detection circuit; a second signal detection circuit; a latch circuit; a selection signal generation circuit; a first input port; and a first output port. The first signal detection circuit is connected to the first input port, the latch circuit and the selection signal generation circuit. The second signal detection circuit is connected to the first input port, the latch circuit and the selection signal generation circuit. The latch circuit is connected to the selection signal generation circuit and the output port. The selection signal generation circuit includes a delay circuit.
H03K 3/00 - Circuits pour produire des impulsions électriques; Circuits monostables, bistables ou multistables
H03K 3/3565 - Circuits bistables bistables avec hystérésis, p.ex. déclencheur de Schmitt
H03K 3/013 - Modifications du générateur en vue d'éviter l'action du bruit ou des interférences
H03K 3/2893 - Générateurs caractérisés par le type de circuit ou par les moyens utilisés pour produire des impulsions par l'utilisation, comme éléments actifs, de transistors bipolaires avec réaction positive interne ou externe utilisant un moyen de réaction autre qu'un transformateur utilisant au moins deux transistors couplés de façon que l'entrée de l'un dérive de la sortie de l'autre, p.ex. multivibrateur bistable bistables avec hystérésis, p.ex. déclencheur de Schmitt
An LDMOS transistor includes a P-type body region formed on a main surface of a semiconductor substrate, an N-type source region, an N-type drift region, an N-type drain region, a gate electrode formed via a gate insulating film, a first field plate formed on the drift region via a first insulating film, a plurality of second field plates being in contact with the source region or the gate electrode and formed on the first field plate via a second insulating film, a P-type first buried region, and a P-type second buried region having an impurity concentration lower than an impurity concentration of the first buried region. Distances of the first and second field plates from the drain region in the semiconductor substrate plane direction decrease toward the upper layers, and have a predetermined relationship with the distances between the first and second buried regions and the drain region.
H01L 29/36 - Corps semi-conducteurs caractérisés par la concentration ou la distribution des impuretés
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
Provided is a sensor device being a signal processing device, including: a capacitor; a sensor unit configured to wirelessly transmit, in a case in which electric power of a predetermined amount or more is accumulated in the capacitor, a first signal (SG1) through use of the electric power accumulated in the capacitor; a reception unit configured to receive a radio wave transmitted from a power transmission device being an external device; and a transmission antenna functioning as a second transmission unit, the transmission antenna being configured to wirelessly transmit, in response to reception of the radio wave, a response signal (SG3) being a second signal generated based on the received radio wave without using the electric power accumulated in the capacitor.
H02J 50/12 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif du type couplage à résonance
H02J 50/80 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique mettant en œuvre l’échange de données, concernant l’alimentation ou la distribution d’énergie électrique, entre les dispositifs de transmission et les dispositifs de réception
G01S 13/34 - Systèmes pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées utilisant la transmission d'ondes continues modulées en fréquence, tout en faisant un hétérodynage du signal reçu, ou d’un signal dérivé, avec un signal généré localement, associé au signal transmis simultanément
H02J 50/23 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant des micro-ondes ou des ondes radio fréquence caractérisés par le type d'antennes de transmission, p.ex. les antennes-réseau directives ou les antennes Yagi
Provided is a battery-less sensor circuit including a power generation element, a first switching element, a voltage control circuit, a first storage capacitor, a sensor circuit, and a load. The power generation element is connected to the first storage capacitor via the first switching element. A power supply terminal of the sensor circuit is connected to an input terminal of the first switching element. The voltage control circuit is configured to control a current passing through the first switching element through reception of a voltage of the input terminal of the first switching element. The load is connected to the first storage capacitor and the sensor circuit.
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
H02J 7/00 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries
H02J 7/34 - Fonctionnement en parallèle, dans des réseaux, de batteries avec d'autres sources à courant continu, p.ex. batterie tampon
26.
CELL BALANCE CIRCUIT, CELL BALANCE DEVICE, CHARGE/DISCHARGE CONTROL CIRCUIT, CHARGE/DISCHARGE CONTROL DEVICE, AND BATTERY DEVICE
The cell balance circuit is a circuit connected in parallel to a secondary battery including a battery pack in which a first cell to an nth cell (n is plural) are connected in series in order from a positive electrode to a negative electrode and adjusting individual voltages of n cells. The cell balance circuit includes a switch circuit which can respectively open/close paths connected to n cells, and a cell discharge resistor respectively connected to the first cell to the nth cell via the switch circuit. The switch circuit switches to a cell balance stop state where each of the first cell to the nth cell is not connected to the cell discharge resistor in at least one state of a state where a charger is not connected to an external terminal, or a state where the secondary battery is being discharged to a load.
An oscillation circuit includes first and second constant current circuits, first and second switch circuits, first and second MOS transistors, and an output port. The first constant current circuit is connected to one port of a capacitor. The first MOS transistor has a gate and a drain connected to the second constant current circuit and a source connected to another port of the capacitor. The second MOS transistor has a gate connected to the gate of the first MOS transistor, and a drain connected to the one port of the capacitor. The second switch circuit is connected between a source of the second MOS transistor and a second power supply terminal. The output port outputs a signal based on a voltage of the one port. Turn-on and turn-off of the first and second switch circuits are controlled by the signal of the output port and an inverted signal.
H03B 5/04 - Modifications du générateur pour compenser des variations dans les grandeurs physiques, p.ex. alimentation, charge, température
H03B 5/24 - Elément déterminant la fréquence comportant résistance, et soit capacité, soit inductance, p.ex. oscillateur à glissement de phase l'élément actif de l'amplificateur étant un dispositif à semi-conducteurs
28.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a semiconductor substrate of a first conductivity type, and a vertical Hall element provided on the semiconductor substrate. The vertical Hall element includes an impurity diffusion layer of a second conductivity type and three or more electrodes. The impurity diffusion layer is provided on the semiconductor substrate and has an impurity concentration which increases as a depth increases. The three or more electrodes are provided in a straight line on a surface of the impurity diffusion layer and are composed of an impurity region of the second conductivity type having a higher concentration than the impurity diffusion layer.
H01L 43/14 - Procédés ou appareils spécialement adaptés à la fabrication ou le traitement de ces dispositifs ou de leurs parties constitutives pour dispositifs à effet Hall
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
29.
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device includes: forming a base oxide film on a surface of a silicon semiconductor substrate (P-type well region); forming a thick film portion provided along a boundary C between an activation region A and an element isolation region B and having at least a predetermined width W from the boundary C toward the element isolation region B and a thin film portion having a film thickness smaller than a film thickness ta of the thick film portion in the activation region A and the element isolation region B other than the thick film portion on the base oxide film; forming a silicon nitride film on surfaces of the thick film portion and the thin film portion; and selectively removing the silicon nitride film in the element isolation region B through an over-etching process.
The charge control circuit includes a cell connection detection circuit monitoring a voltage between input ports to which terminals of a cell pack are connected, an overvoltage detection circuit monitoring an overvoltage of the secondary cells, a first latch circuit receiving a signal output by the cell connection detection circuit, a second latch circuit receiving a signal output by the overvoltage detection circuit, a reset circuit outputting a signal to the first latch circuit and the second latch circuit when the charge control circuit is activated, and a control circuit receiving a signal output from the second latch circuit and outputting a signal for protecting the cell pack from the overvoltage. The control circuit does not output a signal for blowing the fuse until the first latch circuit receives a detection signal of the cell connection detection circuit.
H02J 7/00 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries
G01R 31/3835 - Dispositions pour la surveillance de variables des batteries ou des accumulateurs, p.ex. état de charge ne faisant intervenir que des mesures de tension
G01R 31/396 - Acquisition ou traitement de données pour le test ou la surveillance d’éléments particuliers ou de groupes particuliers d’éléments dans une batterie
H01M 50/204 - Bâtis, modules ou blocs de multiples batteries ou de multiples cellules
H01M 50/583 - Dispositifs ou dispositions pour l’interruption du courant en réponse au courant, p.ex. fusibles
H01M 50/296 - Montures; Boîtiers secondaires ou cadres; Bâtis, modules ou blocs; Dispositifs de suspension; Amortisseurs; Dispositifs de transport ou de manutention; Supports caractérisés par les bornes des blocs de batterie
H01M 10/48 - Accumulateurs combinés à des dispositions pour mesurer, tester ou indiquer l'état des éléments, p.ex. le niveau ou la densité de l'électrolyte
H01M 10/46 - Accumulateurs combinés par structure avec un appareil de charge
According to the present invention, an optical latch circuit includes a voltage detector configured to compare a first power generation voltage input from a first input terminal with a preset first threshold voltage and output a set signal from a determination output terminal when the first power generation voltage exceeds the first threshold voltage, a first photovoltaic element connected between the first input terminal and a grounding point in a forward direction and configured to output a first power generation voltage to the first input terminal according to photovoltaic power when light is radiated, and a feedback resistor inserted between the first input terminal and the determination output terminal.
H03K 3/42 - Générateurs caractérisés par le type de circuit ou par les moyens utilisés pour produire des impulsions par l'utilisation, comme éléments actifs, de dispositifs opto-électroniques, c.à d. de dispositifs émetteurs de lumière et de dispositifs photo-électriques couplés électriquement ou optiquement
Provided is a sensor device provided with improved reproducibility of a switching characteristic and reduced average consumption current. A sensor device include: a sensor; a drive circuit configured to drive the sensor; a processing circuit configured to output a binary result signal obtained by binarizing an electrical signal output from the sensor; a determination circuit configured to capture the binary result signal a plurality of times and perform a predetermined logical determination processing; a latch circuit configured to capture an output signal of the determination circuit; an output terminal; and a control circuit configured to output a control signal for intermittently controlling at least one of the drive circuit and the processing circuit such that an operation period and a pause period are repeated with a predetermined cycle. The operation period is interrupted and caused to transition to the pause period in a predetermined case.
G01D 4/14 - Appareils d'indication ou d'enregistrement de demande fixée, c. à d. dont l'indication a lieu lorsqu'une quantité prédéterminée a été consommée pendant un intervalle de temps supérieur ou inférieur à un intervalle de temps prédéterminé
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
33.
SIMULATION DEVICE, SIMULATION METHOD, SIMULATION SYSTEM, AND PROGRAM
A simulation device includes: a model creation unit configured to create a simulation model of a test circuit, the test circuit including a boost circuit configured to receive power from a power generation element and output, to a load circuit, a boosted power obtained by boosting the received power, the power generation element being able to output a power smaller than power consumption of a load circuit, a capacitor provided between the power generation element and the boost circuit and configured to accumulate charge based on the received power from the power generation element and operate the boost circuit for a certain period of time by the accumulated charge, and at least one of the power generation element or the load circuit; and a simulation unit configured to simulate, based on the simulation model, at least one of (A) a charging operation of the capacitor or (B) a discharging operation from the capacitor in the test circuit.
G06F 30/367 - Vérification de la conception, p.ex. par simulation, programme de simulation avec emphase de circuit intégré [SPICE], méthodes directes ou de relaxation
A shunt regulator includes: a capacitor, connected between an output terminal and a ground terminal; a voltage divider circuit and an output transistor, connected between the output terminal and the ground terminal; an error amplifier, controlling the output transistor based on a voltage at an output terminal of the voltage divider circuit and a reference voltage; a non-volatile memory; a memory control circuit, outputting a data read signal to the non-volatile memory; and a voltage detection circuit, detecting that a voltage at the output terminal has reached a predetermined voltage which permits a data reading operation of the non-volatile memory, and outputting a detection signal to the memory control circuit. An operating current of the non-volatile memory is supplied from the capacitor.
G05F 1/613 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en parallèle avec la charge comme dispositifs de réglage final
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p.ex. circuits de commande E/S de données, mémoires tampon de données E/S
A semiconductor device includes a magnetic switch provided on a semiconductor substrate. The magnetic switch includes: a Hall element, first and second power supply terminals; a current source driving the Hall element; a switch circuit switching a differential output voltage supplied from two electrodes of the Hall element to a first or second state based on a control signal supplied from a control terminal; an amplifier amplifying a signal from the switch circuit; a reference voltage circuit generating a reference voltage based on a reference common mode voltage and a control signal; a comparator receiving an output signal of the amplifier and the reference voltage; and a latch circuit latching an output voltage of the comparator. The reference voltage of the reference voltage circuit is controlled by switching from a reference value to a voltage with a high or low adjustment value according to the output voltage of the comparator.
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
H03F 3/04 - Amplificateurs comportant comme éléments d'amplification uniquement des tubes à décharge ou uniquement des dispositifs à semi-conducteurs comportant uniquement des dispositifs à semi-conducteurs
H03K 5/24 - Circuits présentant plusieurs entrées et une sortie pour comparer des impulsions ou des trains d'impulsions entre eux en ce qui concerne certaines caractéristiques du signal d'entrée, p.ex. la pente, l'intégrale la caractéristique étant l'amplitude
Provided is a shunt regulator including: multiple resistors, connected in series between an output terminal and a ground terminal and constituting a voltage divider circuit; an output transistor, connected between the output terminal and the ground terminal; a first drive circuit, including a first reference voltage circuit which outputs a first reference voltage and an error amplifier, and controlling the output transistor based on a voltage of a first output terminal of the voltage divider circuit; a second drive circuit, controlling the output transistor based on a voltage of a second output terminal of the voltage divider circuit; and an activation control circuit, switching operation of the first drive circuit and the second drive circuit based on the first reference voltage. The second drive circuit has a shorter activation time than the first drive circuit.
G05F 1/613 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en parallèle avec la charge comme dispositifs de réglage final
G05F 1/565 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final sensible à une condition du système ou de sa charge en plus des moyens sensibles aux écarts de la sortie du système, p.ex. courant, tension, facteur de puissance
H03K 17/06 - Modifications pour assurer un état complètement conducteur
An electronic device including a boost circuit includes a first boost circuit, a first output circuit, a load, a first storage capacitor, a second storage capacitor, and an input terminal, wherein the input terminal is connected to the first storage capacitor and the first boost circuit, the second storage capacitor is connected to the first boost circuit and the first output circuit, and the load is connected to the first output circuit.
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p.ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
38.
Switching regulator control circuit and DC/DC converter
Provided is a DC/DC converter capable of providing overvoltage protection reliably without being affected by, for example, an external element connected to an output terminal. The DC/DC converter includes a comparator, an RS-FF circuit, a drive circuit, and an ON-timer circuit, and the ON-timer circuit includes: a current source circuit which provides an electric current based on a power supply voltage; a ripple generation circuit which generates a ripple voltage; an averaging circuit which averages the ripple voltage; a timer circuit which generates an ON-timer signal; and an overvoltage protection circuit (clamp circuit).
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
H02H 7/12 - Circuits de protection de sécurité spécialement adaptés pour des machines ou appareils électriques de types particuliers ou pour la protection sectionnelle de systèmes de câble ou ligne, et effectuant une commutation automatique dans le cas d'un chan pour redresseurs pour convertisseurs ou redresseurs statiques
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
A voltage monitoring device 2 includes: a comparator circuit 31; a state determination circuit 32; a pulse pattern setting circuit 33; an output circuit 36; a VDD port 21; a VSS port 22; an input port 24; and an output port 23. The comparator circuit 31 is connected to the state determination circuit 32. The state determination circuit 32 is connected to the pulse pattern setting circuit 33. The pulse pattern setting circuit is connected to the output port 23 via the output circuit 36.
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
Provided a semiconductor device which is covered by an encapsulating resin into a cuboid shape, and has a plurality of lead portions partially exposed from side surfaces and a bottom surface thereof, the semiconductor device having cutout portions formed in the encapsulating resin along edges formed by the side surfaces and the bottom surface, each of the plurality of lead portions having a first exposed surface which is coplanar with one of the side surfaces, and is exposed from the one of the side surfaces; and second exposed surfaces which are surfaces that are adjacent to and on both sides of the first exposed surface, and are exposed from the one of the cutout portions.
Provided is a semiconductor device applicable to both types of packages regardless of whether or not double bonding of a lead frame pad is allowed. The semiconductor device includes: an operational amplifier; a feedback resistor; a reference voltage generation circuit; an output transistor; a first pad which is connected to an output terminal of the output transistor, and is to be selectively connected to a lead frame pad by a bonding wire; a second pad to be selectively connected to the lead frame pad by a bonding wire; and a connection switching element provided between the first pad and the second pad. In a case in which the second pad is connected to the lead frame pad by the bonding wire, the connection switching element interrupts connection between the first pad and the second pad.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
42.
Semiconductor device and manufacturing method thereof
b of the lead 6, and connection between the semiconductor chip 1 and the lead 6 is strengthened, so that the semiconductor device does not require an anchor portion.
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
b). In the off transistor (10), the gate electrode (3) is extensively provided over a portion or entirety of the drain region (5) in addition to a channel region. A capacitance (C2) formed between the gate electrode (3) and the drain region (5) may be greater than a capacitance (C1) generated between the gate electrode (3) and a ground potential.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
44.
Resistance device and current detection circuit including the resistance device
To provide a resistance device which has a small temperature dependence, in which a resistance value is adjustable in a wide range of from a high resistance value to a low resistance value, and which has a small circuit area, and to provide a current detection circuit including the resistance device. The resistance device is to be connected between two terminals, and a resistance value thereof is variable, the resistance device including: a reference resistor; a series variable resistor circuitry including at least one parallel variable resistor circuit which is connected in series to each other, and which each includes a resistor and a trimming element connected in parallel to the resistor; and a parallel variable resistor circuitry including at least one series variable resistor circuit which is connected in parallel to each other, and which each includes a resistor and a trimming element connected in series to the resistor.
H01C 17/23 - Appareils ou procédés spécialement adaptés à la fabrication de résistances adaptés pour ajuster la valeur de la résistance en ouvrant ou en fermant des pistes résistantes d'une valeur prédéterminée
H01C 1/14 - Bornes ou points de prise spécialement adaptés aux résistances; Dispositions de bornes ou points de prise sur les résistances
45.
Overcurrent protection circuit and load driving device
An overcurrent protection circuit configured to limit an output current flowing through an output transistor includes a sense transistor that provides a sense current proportional to the output current, a sense resistor through which the sense current flows, a current limiting circuit that detects a sense voltage generated by the sense resistor and controls a gate voltage of the output transistor, and a current correction circuit that provides the sense resistor with a corrected sense current added to the sense current based on a difference of voltage between a drain voltage of the output transistor and a drain voltage of the sense transistor.
G05F 1/573 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final sensible à une condition du système ou de sa charge en plus des moyens sensibles aux écarts de la sortie du système, p.ex. courant, tension, facteur de puissance à des fins de protection avec détecteur de surintensité
H03K 17/082 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension par réaction du circuit de sortie vers le circuit de commande
H02H 3/08 - Circuits de protection de sécurité pour déconnexion automatique due directement à un changement indésirable des conditions électriques normales de travail avec ou sans reconnexion sensibles à une surcharge
46.
MASK CONTROL CIRCUIT, CONTROLLER INCLUDING THE MASK CONTROL CIRCUIT, CHARGE/DISCHARGE CONTROL CIRCUIT, AND BATTERY DEVICE
Operational instability is prevented without compromising the state transition speed. A mask control circuit is a circuit which generates a mask signal masking a control signal during a period in which a voltage level of a monitoring target terminal to be monitored is transitioning. The mask control circuit includes: a first input port which receives a signal supplied to the monitoring target terminal; a second input port which receives a signal representing the voltage level of the monitoring target terminal; a logic circuit which determines whether the voltage level of the monitoring target terminal is in transition based on signals received from the first input port and the second input port; and an output port which outputs a signal indicating a determination result of whether the voltage level of the monitoring target terminal is in transition as the mask signal.
H02J 7/00 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
47.
CHARGE/DISCHARGE CONTROL CIRCUIT AND BATTERY DEVICE
A charge/discharge control circuit controls charging and discharging using a discharge control FET which opens and closes a discharge path and a charge control FET which opens and closes a charge path. The charge/discharge control circuit includes a charge/discharge monitoring circuit; and a control circuit, turning on and off the discharge control FET connected between a secondary cell and a load and the charge control FET connected between the discharge control FET and a charger in response to a detection signal from the charge/discharge monitoring circuit and a voltage of a negative electrode of the charger, and opening and closing the discharge path and the charge path. The control circuit turns off the discharge control FET and turns on the charge control FET, and then turns off the charge control FET when detecting that the voltage of the negative electrode of the charger reaches a predetermined voltage or higher.
H02J 7/00 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries
H01M 10/46 - Accumulateurs combinés par structure avec un appareil de charge
H01M 10/48 - Accumulateurs combinés à des dispositions pour mesurer, tester ou indiquer l'état des éléments, p.ex. le niveau ou la densité de l'électrolyte
48.
LIGHT RECEIVING ELEMENT, LIGHT DETECTION DEVICE, AND LIGHT DETECTION METHOD
A light receiving element capable of detecting predetermined light among incident light beams with high sensitivity by a simple structure is provided. A light receiving element 100 that detects ultraviolet rays UV in sunlight SL includes an N-type semiconductor substrate 1, a P-type conductive layer 2 formed on the surface of the semiconductor substrate 1, an N-type ultraviolet absorption layer 3 formed on the surface of the conductive layer 2, transmitting visible rays VL in the sunlight SL, and absorbing the ultraviolet rays UV to excite electrons, and an N-type detection layer 4 formed at a position separated from the ultraviolet absorption layer 3 on the surface of the conductive layer 2 and detecting electrons flowing from the ultraviolet absorption layer 3 as a first photocurrent IL1.
A bus arbitration circuit includes a first bus port, a second bus port, a first output circuit connected to the first bus port, a second output circuit connected to the second bus port, a control circuit, and a switch circuit. The control circuit includes a first input port, a second input port, a control signal output port, and an output port. The first input port receives data of the first bus port, the second input port receives data of the second bus port, and data is outputted from the output port to an input port of the first output circuit. The switch circuit has an input port connected to the first bus port, a control port connected to the control signal output port of the control circuit, and an output port from which data of a host bus is outputted to an input port of the second output circuit.
Delay circuit includes: first to fourth transistors; capacitor; constant current source; and resistor. The first transistor has a gate connected to an input terminal, a source connected to the first power supply terminal, and a drain. The second transistor has a gate connected to an input terminal and the gate of the first transistor, a drain connected to the drain of the first transistor and the second terminal of the capacitor, and a source. The third transistor has a gate connected to a node between the drain of the first transistor, the drain of the second transistor, and the second terminal of the capacitor, a source connected to the second power supply terminal, and a drain. The fourth transistor has a gate connected to the node and the gate of the third transistor, a drain connected to the drain of the third transistor and an output terminal, and a source.
A reference voltage circuit includes: a first and a second NPN transistor having a collector and a base shorted and diode-connected, the second NPN transistor having an emitter connected to a first potential node and operating at a higher current density; a first resistor connected in series with the first NPN transistor; a second resistor having one end connected to a circuit with the first NPN transistor and the first resistor connected in series; a third resistor having one end connected to the collector of the second NPN transistor; a connection point to which the other ends of the second and the third resistor are connected; an arithmetic amplifier circuit having an inverting input terminal, a non-inverting input terminal, and an output terminal respectively connected to the second resistor, the third resistor, and the connection point; and a current supply circuit connected to the collector of the first NPN transistor.
G05F 3/30 - Régulateurs utilisant la différence entre les tensions base-émetteur de deux transistors bipolaires fonctionnant à des densités de courant différentes
A DC-DC converter of a synchronous rectification type includes a synchronous rectification transistor and a backflow detection circuit which detects a reverse current based on a voltage across the synchronous rectification transistor. The backflow detection circuit includes a first-stage differential input circuit including a first transistor, a first resistor, a second transistor, a second resistor and a fifth transistor, and a second-stage differential input circuit including a third transistor and a fourth transistor. The fifth transistor is of a same conductive type as the synchronous rectification transistor and contains a drain connected to the other end of the first resistor with respect to an end connected to the first transistor.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
G01R 19/14 - Indication du sens d'un courant; Indication de la polarité d'une tension
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
Provided is a reference voltage circuit configured to supply a reference voltage in which a variation in voltage with respect to a variation in power supply voltage is suppressed. The reference voltage circuit includes a reference voltage generation circuit which includes an output line for supplying a generated reference voltage to an output terminal; and an output control circuit which includes an output transistor and a stabilization transistor, and is configured to control the supply of the reference voltage to the output terminal, the output transistor containing a gate to which a control voltage is to be provided, the stabilization transistor containing a gate to be connected to a source of the output transistor, and a source to be connected to a drain of the output transistor, and having a gate-source voltage that is equal to or more than a dram-source voltage in a saturation region of the output transistor.
There is provided a high withstand voltage LDMOS field-effect transistor that enables the compatibility of an increase of its withstand voltage and a decrease of its ON resistance. The high withstand voltage LDMOS is characterizing in including: a first electroconductive type body region formed on a main surface of a semiconductor substrate; a second electroconductive type source region formed on a surface of the body region; a second electroconductive type drift region formed so as to have contact with the body region; a second electroconductive type drain region formed on the drift region; a first electroconductive type buried region having contact with the body region and formed below the drift region; a gate electrode formed above the body region between the source region and the drift region and above the drift region nearer to the source region via a gate insulating film; a first field plate that extends from the gate electrode toward the drain region and that is formed above the drift region via a first insulating film; and a second field plate that has contact with the source region or the gate electrode and that is formed above the first field plate via a second insulating film, in which a distance between the buried region and the drain region is smaller than a distance between the first field plate and the drain region and larger than a distance between the second field plate and the drain region.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/36 - Corps semi-conducteurs caractérisés par la concentration ou la distribution des impuretés
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
55.
CHARGE/DISCHARGE CONTROL CIRCUIT AND BATTERY DEVICE PROVIDED WITH SAME
Provided is a charge/discharge control circuit controllable by a control signal from a controller that is external. The charge/discharge control circuit includes a control circuit configured to, in response to a power-down control signal for transitioning to a power-down state being input from the controller, latch the power-down control signal and block a discharge path from a secondary cell (SC) to the controller.
Provided is an overheat protection circuit with improved accuracy of overheat detection. The overheat protection circuit includes: an input terminal; an output terminal; a first transistor containing a first terminal, a second terminal, and a control terminal, the first transistor being switchable between ON and OFF; and a first NPN transistor containing a base to be connected to a node between the second terminal of the first transistor and the ground terminal, an emitter to be connected to the ground terminal, and a collector to be supplied with a constant current and connected to the output terminal, the first NPN transistor being switchable between ON and OFF in accordance with a voltage level of a reference voltage to be supplied to the base, the reference voltage having a temperature characteristic of having a temperature coefficient of zero or more.
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
Provided is a magnetic sensor circuit and includes: a magnetic sensor outputting a first sensor signal based on a magnetic flux density in a first direction; a magnetic sensor outputting a second sensor signal based on a magnetic flux density in a second direction orthogonal to the first direction; a signal processing circuit respectively obtaining a first detection signal and a second detection signal which transition between low and high levels based on the first magnetic sensor signal and the second magnetic sensor signal; a driver outputting a first output voltage based on the first detection signal; a driver outputting a second output voltage based on the second detection signal; and a voltage monitoring circuit generating mode signals whose signal levels transition based on transitions of voltage levels of the first output voltage and the second output voltage input thereto.
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
The semiconductor device includes a Hall element, a first differential pair, a second differential pair, an output amplifier circuit, and a voltage divider circuit. The Hall element outputs a signal that is dependent on stress to be applied to a semiconductor substrate to the first differential pair. The voltage divider circuit divides a voltage into a divided voltage having a voltage dividing ratio that is dependent on the stress. The first differential pair outputs a first current based on the signal. The second differential pair outputs a second current based on the divided voltage and a reference voltage. The output amplifier circuit outputs a voltage based on the first and second currents. A gain of the output amplifier circuit is approximated by a sum of a difference between stress dependence coefficients of transconductances of the first and second differential pairs and a stress dependence coefficient of the voltage dividing ratio.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
H03F 1/22 - Modifications des amplificateurs pour réduire l'influence défavorable de l'impédance interne des éléments amplificateurs par utilisation de couplage dit "cascode", c. à d. étage avec cathode ou émetteur à la masse suivi d'un étage avec grille ou base à la masse respectivement
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01D 21/02 - Mesure de plusieurs variables par des moyens non couverts par une seule autre sous-classe
Provided is a magnetic sensor device including: a current input terminal; a voltage input terminal; an output terminal; a magnetic sensor circuit including a first terminal, one of one Hall element and a set of Hall elements connected in parallel to each other, and a pilot signal generating circuit; a chopper modulator/demodulator circuit including a first mixer connected to the magnetic sensor circuit, an amplifier containing an input port connected to the first mixer, a second mixer containing an input port connected to the amplifier, and an output port connected to the output terminal; and a feedback circuit including a second terminal connected to the chopper modulator/demodulator circuit, a third mixer, a voltage-current conversion circuit, and a third terminal connected to the current input terminal and the first terminal, and a fourth terminal connected to the voltage input terminal.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
60.
Semiconductor device and semiconductor device manufacturing method
In the semiconductor device, a high-concentration diffusion layer and a low-concentration diffusion layer are disposed around a drain diffusion layer of an ESD protection element. The high-concentration diffusion layer is separated from a gate electrode, and a medium concentration LDD diffusion layer is disposed in a separation gap. Variations in characteristics are suppressed by reducing thermal treatment on the high-concentration diffusion layer and a medium concentration diffusion layer.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01L 21/225 - Diffusion des impuretés, p.ex. des matériaux de dopage, des matériaux pour électrodes, à l'intérieur ou hors du corps semi-conducteur, ou entre les régions semi-conductrices; Redistribution des impuretés, p.ex. sans introduction ou sans élimination de matériau dopant supplémentaire en utilisant la diffusion dans ou hors d'un solide, à partir d'une ou en phase solide, p.ex. une couche d'oxyde dopée
Provided is a semiconductor device capable of detecting an abnormal state in which two fuses are both short-circuited or cut. The semiconductor device includes: a trimming circuit having a first fuse and a second fuse connected in series; a current source circuit configured to supply current to the trimming circuit; and a determination circuit configured to determine whether a connection state or disconnect state of the first fuse and the second fuse are abnormal or not based upon signals derived from an output signal of the trimming circuit.
H01H 85/02 - Dispositifs de protection dans lesquels le courant circule à travers un organe en matière fusible et est interrompu par déplacement de la matière fusible lorsqu'il devient excessif - Détails
H03K 19/20 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion caractérisés par la fonction logique, p.ex. circuits ET, OU, NI, NON
A semiconductor device formed on a semiconductor substrate of a P type includes: a vertical resistor circuit including a resistor of an N type, the resistor forming a current path in a direction perpendicular to a surface of the semiconductor substrate; a Hall element provided on the semiconductor substrate, the Hall element being configured to supply a voltage proportional to a magnetic flux density in the direction perpendicular to the surface of the semiconductor substrate; an amplifier configured to amplify the voltage supplied from the Hall element, and supply the amplified voltage; a current/voltage conversion circuit configured to supply, as a comparison reference voltage, a voltage containing a product of a reference current IREF flowing through the vertical resistor circuit and a resistance value RREF of the vertical resistor circuit; and a comparator configured to receive the voltage supplied from the amplifier and the comparison reference voltage.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01L 1/00 - Mesure des forces ou des contraintes, en général
G01P 15/12 - Mesure de l'accélération; Mesure de la décélération; Mesure des chocs, c. à d. d'une variation brusque de l'accélération en ayant recours aux forces d'inertie avec conversion en valeurs électriques ou magnétiques par modification d'une résistance électrique
H03K 5/24 - Circuits présentant plusieurs entrées et une sortie pour comparer des impulsions ou des trains d'impulsions entre eux en ce qui concerne certaines caractéristiques du signal d'entrée, p.ex. la pente, l'intégrale la caractéristique étant l'amplitude
H03F 3/04 - Amplificateurs comportant comme éléments d'amplification uniquement des tubes à décharge ou uniquement des dispositifs à semi-conducteurs comportant uniquement des dispositifs à semi-conducteurs
The semiconductor device includes a magnetic switch provided to a semiconductor substrate. The magnetic switch includes: a horizontal Hall element including first electrodes and second electrodes arranged at positions perpendicular to the first electrodes; a switch circuit configured to select a drive current direction of the Hall element from four directions; an SH comparator configured to alternately perform a first operation for sampling a signal transmitted from the Hall element and a second operation for sending a signal which is based on a result of comparing a value of the sampled signal and a reference value; a latch circuit configured to hold this sent signal and send the held signal as a latch output signal; and a control circuit configured to select the drive current direction in each of a period for the first operation and a period for the second operation based on the latch output signal.
H03K 17/90 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
H03K 19/21 - Circuits OU EXCLUSIF, c. à d. donnant un signal de sortie si un signal n'existe qu'à une seule entrée; Circuits à COÏNCIDENCES, c. à d. ne donnant un signal de sortie que si tous les signaux d'entrée sont identiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
A convenient electronic circuit in which a switch is able to be switched through electric power obtained using weak radio waves is provided. An electronic circuit includes: a switch configured to switch a connection state between a power supply configured to output DC electric power and a load; a first antenna capable of receiving radio waves; a second antenna capable of receiving radio waves; a first power conversion circuit configured to convert electric power received by the first antenna into DC electric power and output the converted DC electric power from a first DC power output terminal; a second power conversion circuit configured to convert electric power received by the second antenna into DC electric power and output the converted DC electric power from a second DC power output terminal; and a control circuit configured to switch a connection state of the switch when a difference between electric power input from a first input terminal and electric power input from a second input terminal is larger than a predetermined value.
B60R 25/40 - Caractéristiques de l’alimentation électrique du système antivol, p.ex. batteries électriques, alimentation de secours ou moyens d’économiser les batteries
H02J 50/20 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant des micro-ondes ou des ondes radio fréquence
H02J 50/40 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant plusieurs dispositifs de transmission ou de réception
H05K 5/02 - Enveloppes, coffrets ou tiroirs pour appareils électriques - Détails
H02M 3/04 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques
H02J 9/00 - Circuits pour alimentation de puissance de secours ou de réserve, p.ex. pour éclairage de secours
A convenient electronic circuit in which a switch is able to be switched through electric power obtained using weak radio waves is provided. An electronic circuit includes a switch which is connected between a power supply configured to output direct current (DC) electric power and a load driven through DC electric power supplied from the power supply and which switches a connection state between the power supply and the load from a non-conduction state to a conduction state; a power conversion circuit which includes a power input terminal to which electric power obtained through radio waves received by an antenna is input and a DC power output terminal configured to output DC electric power and which converts electric power input to the power input terminal into DC electric power and outputs the converted DC electric power from the DC power output terminal; and a control circuit configured to control a connection state of the switch to be in a conduction state when the power conversion circuit outputs DC electric power. The power conversion circuit includes at least a first capacitor, a first diode, a second capacitor, and a second diode.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
H02M 1/088 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques pour la commande simultanée de dispositifs à semi-conducteurs connectés en série ou en parallèle
66.
Electronic circuit, module, and system for radio wave powered battery switch
A convenient electronic circuit in which a switch is able to be switched through electric power obtained by weak radio waves is provided. An electronic circuit includes: a power supply configured to output direct current (DC) electric power; a switch connected between the power supply and a load driven by DC electric power supplied from the power supply and configured to switch a connection state between the power supply and the load from a non-conduction state to a conduction state; an power input terminal to which electric power obtained by radio waves received by an antenna capable of receiving the radio waves is input; a DC power output terminal configured to output DC electric power, a power conversion circuit configured to convert electric power input to the power input terminal into DC electric power and output the converted electric power from the DC power output terminal; an input terminal connected to the DC power output terminal of the power conversion circuit; an output terminal connected to the switch and configured to control a connection state of the switch; and a control circuit configured to control a connection state of the switch to be in a conduction state when the power conversion circuit outputs DC electric power due to the reception of radio waves by the antenna.
H02J 50/20 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant des micro-ondes ou des ondes radio fréquence
B60R 25/40 - Caractéristiques de l’alimentation électrique du système antivol, p.ex. batteries électriques, alimentation de secours ou moyens d’économiser les batteries
H02J 9/00 - Circuits pour alimentation de puissance de secours ou de réserve, p.ex. pour éclairage de secours
G06K 19/07 - Supports d'enregistrement avec des marques conductrices, des circuits imprimés ou des éléments de circuit à semi-conducteurs, p.ex. cartes d'identité ou cartes de crédit avec des puces à circuit intégré
A magnetic sensor has a Hall IC that has a Hall element formed on a surface of the Hall IC, and a lead frame that supports the Hall IC. The lead frame includes a first region that is disposed in the vicinity of the Hall element and generates a first magnetic field due to a first eddy current generated when a measurement target magnetic field is applied, and second regions that are disposed away from the first region and generate a second magnetic field having an intensity that cancels the first magnetic field by means of second eddy currents generated when the measurement target magnetic field is applied.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01L 43/04 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails de dispositifs à effet Hall
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
Provided is a water leakage detection device, including: a pair of metal electrodes containing a first end and a second end; a warning device connected to the first end of the pair of metal electrodes, and configured to issue a warning based on a potential difference between the pair of metal electrodes; and a power supply which is connected to the second end of the pair of metal electrodes, and configured to apply a voltage between the pair of metal electrodes.
G01M 3/18 - Examen de l'étanchéité des structures ou ouvrages vis-à-vis d'un fluide par utilisation d'un fluide ou en faisant le vide par détection de la présence du fluide à l'emplacement de la fuite en utilisant des moyens de détection électrique pour soupapes
G08B 21/20 - Alarmes de situation réagissant à l'humidité
69.
Semiconductor device and method of manufacturing same
A semiconductor element is mounted on a die pad, and electrode pads arranged along the outer circumference of an upper surface of the semiconductor element are electrically connected to leads by wires, respectively. The semiconductor element has an element region having a high sensitivity with respect to stress, and an element region having a relatively low sensitivity with respect to stress. A low-stress resin film is provided on the element region having a high sensitivity with respect to stress. The semiconductor element, the low-stress resin film, the die pad, and the leads are covered with an encapsulating resin.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
70.
Plant cultivation system, controller, and plant cultivation method
A plant cultivation system includes: a first sensor configured to output a sensor signal corresponding to an amount of water in a plant; a second sensor configured to output a sensor signal corresponding to a measurement value of an environment condition; and a controller, wherein the controller is configured to, by using a sensor signal from the first sensor obtained by the first sensor measuring a plant to be cultivated and a sensor signal from the second sensor obtained by the second sensor measuring an environment for cultivating the plant to be cultivated, control a specific environment parameter corresponding to the environment condition and measured by the second sensor, in a cultivation environment for the plant to be cultivated.
A01G 27/00 - Dispositifs automatiques d'arrosage, p.ex. pour pots de fleurs
A01G 9/24 - Dispositifs de chauffage, d'aération, de régulation de la température ou d'irrigation dans les serres, les châssis ou les installations similaires
71.
Charge/discharge control circuit and battery device
Provided is a technology capable of protecting a charge/discharge control circuit and a battery device from a reverse connection state without a separately provided protection circuit. The charge/discharge control circuit to be contained in a battery device including a secondary cell, an external positive terminal and an external negative terminal, and FETs which control charging and discharging of the secondary cell, respectively, includes: VDD and VSS terminals; a charge control terminal; a discharge control terminal; a voltage detection terminal to which a voltage applied to the external positive terminal is supplied; an NMOS transistor communicates the discharge control terminal and the voltage detection terminal; and a bipolar transistor having a collector to be connected to a drain of the NMOS transistor, an emitter to be connected to a source of the NMOS transistor, and a base to be connected to a bulk of the NMOS transistor and the VSS terminal.
A semiconductor element is mounted on a die pad, and electrode pads arranged at an outer circumference of a surface of the semiconductor element are electrically connected to leads by wires, respectively. The semiconductor element, the die pad, and the leads are covered with an encapsulating resin. The semiconductor element has an element region having a high sensitivity with respect to stress, and an element region having a relatively low sensitivity with respect to stress. A recessed portion is formed in a surface of the encapsulating resin at a position above the element region having a high sensitivity with respect to stress.
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
Provided is a reference voltage circuit including a first MOS transistor to a sixth MOS transistor, a first resistor and a second resistor, a current source circuit, and an output terminal. Five of the transistors form a differential transconductance amplifier, and an input transistor of the differential transconductance amplifier operates in the manner of weak inversion operation.
A differential amplifier includes first and second MOS transistors of a first conductivity type which constitute a differential input circuit, a bias current source which supplies a bias current to the first and second MOS transistors, and a third MOS transistor of the first conductivity type provided between the bias current source and the first and second MOS transistors and constituted to limit a back-gate voltage of the first and second MOS transistors.
A charge/discharge control circuit includes: an output terminal from which a cell-balance control signal is sent to each of the first and the second cell balance circuits; the first and the second voltage detection circuits; a control circuit configured to send the first and the second control signals in accordance with a detection signal received from at least one of the first and the second voltage detection circuits; and an output circuit configured to select one of a voltage of a power supply terminal, a voltage of an input terminal connected to each of a negative electrode of a first battery and a positive electrode of a second battery, and a voltage of a ground terminal in accordance with the first and second control signals, and send the selected voltage to the output terminal.
An electrostatic protection circuit and a semiconductor device include: a first diode whose anode is connected to a signal terminal; a second diode whose cathode is connected to a cathode of the first diode and whose anode is connected to a GND terminal; and a depletion type MOS transistor connected in parallel with the first diode.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H02H 9/04 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension
77.
CHARGE/DISCHARGE CONTROL DEVICE AND BATTERY APPARATUS
A charge/discharge control device and a battery apparatus which are compatible with a quick-chargeable charging device which changes a charging current stepwise, the charge/discharge control device and a battery apparatus include an alarm output circuit connected to a control circuit, and a timer circuit which counts a preset period according to an output of an alarm signal from the alarm output circuit and supplies a signal which inhibits the charging to the control circuit after counting the preset period.
Provided is an oscillation circuit including: a first current source circuit; a second current source circuit; a resistor between the output terminal of the first current source circuit and a second power source; a first capacitor; a second capacitor; a first comparator circuit having a first input terminal to which is a voltage across the resistor is applied as a reference voltage and a second input terminal to which a voltage of the first capacitor is applied; a second comparator circuit having a first input terminal to which is the reference voltage is applied and a second input terminal to which a voltage of the second capacitor is applied; an RS latch; a first and a second switches switching a destination, of an current supplied from the second current source circuit, selected from the first and the second capacitors.
H03B 5/12 - Eléments déterminant la fréquence comportant des inductances ou des capacités localisées l'élément actif de l'amplificateur étant un dispositif à semi-conducteurs
H03B 5/24 - Elément déterminant la fréquence comportant résistance, et soit capacité, soit inductance, p.ex. oscillateur à glissement de phase l'élément actif de l'amplificateur étant un dispositif à semi-conducteurs
H03B 5/06 - Modifications du générateur pour assurer l'amorçage des oscillations
H03K 5/24 - Circuits présentant plusieurs entrées et une sortie pour comparer des impulsions ou des trains d'impulsions entre eux en ce qui concerne certaines caractéristiques du signal d'entrée, p.ex. la pente, l'intégrale la caractéristique étant l'amplitude
A semiconductor device includes a semiconductor substrate, a field-effect transistor arranged at least partially on the semiconductor substrate and used in an analog circuit, and having a P-type gate electrode, an interlayer insulating film arranged on the field-effect transistor, and a hydrogen shielding metal or metallic film arranged on the interlayer insulting film and covering the P-type gate electrode and configured to shield hydrogen.
H01L 23/528 - Configuration de la structure d'interconnexion
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
H01L 27/088 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type comprenant uniquement des composants à effet de champ les composants étant des transistors à effet de champ à porte isolée
An amplifier includes: a signal polarity inversion circuit which modulates an input signal and outputs a modulation signal; an amplifier circuit which is constituted from an operational transconductance amplifier (OTA) to amplify the modulation signal and output a current; and a sample-hold circuit having a sampling capacitor which is charged and discharged by selective sampling of the output current of the amplifier circuit and a holding capacitor to which the voltage of the sampling capacitor is transferred.
Provided is an optical sensor including: a first photodetector including a first photodiode and having a first wavelength sensitivity characteristic; a first resistor having one end connected to a cathode of the first photodiode, and another end connected to a ground point; a second photodetector including a second photodiode and having a second wavelength sensitivity characteristic; a second resistor having one end connected to a cathode of the second photodiode, and another end connected to the ground point; and an amplifier circuit having a first input terminal connected to the first photodiode, a second input terminal connected to the second photodiode, and an output terminal configured to output a potential based on a potential of the first input terminal and a potential of the second input terminal, and using, as an operating power supply, electric power generated by electromotive force of the first photodetector and the second photodetector.
The analog switch includes: a clock generation circuit configured to generate a first clock and a second clock; a transfer circuit including an NMOS transistor having a source and a back gate connected to each other, and a PMOS transistor having a source and a back gate connected to each other, one of which has a drain connected to the source of the other, and a source connected to a signal input terminal, and the other of which has a drain connected to a signal output terminal; a first control signal generation circuit configured to generate a control signal for switching the PMOS transistor based on a voltage at the signal input terminal and the first clock; and a second control signal generation circuit configured to generate a control signal for switching the NMOS transistor based on the voltage at the signal input terminal and the second clock.
G06F 1/08 - Générateurs d'horloge ayant une fréquence de base modifiable ou programmable
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
83.
Semiconductor device and method of manufacturing the semiconductor device
A semiconductor device, including: a first semiconductor element formed at a first surface on a substrate, and has a first electrode portion formed thereon a first metal silicide film; a second semiconductor element formed at a second surface at a higher position than the first surface, and has a second electrode portion formed thereon a second metal silicide film and a hydrogen supply film configured to cover a part of an upper portion of the second metal silicide film; an interlayer insulating film formed on the first semiconductor element and the second semiconductor element; a first contact hole formed through the interlayer insulating film until the first metal silicide film; a second contact hole formed through the interlayer insulating film and the hydrogen supply film until the second metal silicide film; and a metal wiring embedded in each of the first contact hole and the second contact hole.
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
A magnetic substance detection sensor includes a first support substrate, a magnet disposed on the upper main surface of the first support substrate so that a magnetization direction becomes parallel to the upper main surface of the first support substrate, a semiconductor chip disposed on the upper main surface of the first support substrate and having a magnetic field detection element configured to detect a magnetic field component in a specific direction, and a soft magnetic substance film disposed on the lower main surface of the first support substrate and extending in a direction parallel to the magnetization direction of the magnet.
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
Provided is a booster circuit capable of adjusting a power conversion capacity in accordance with input power and also of stably performing a boost operation. The booster circuit includes a first voltage detection circuit configured to output as a first control signal a result of comparing an input voltage and a first voltage obtained by dividing an output voltage, a first oscillation circuit configured to be controlled to operate based on the first control signal, and a first switched-capacitor booster circuit configured to operate in accordance with a first clock signal provided from the first oscillation circuit.
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p.ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
Provided is a reference voltage circuit including a Zener diode having a cathode connected to a current source via a first node, and an anode connected to a ground point; a first resistor having one end connected to the first node; a second resistor having one end connected to another end of the first resistor; a first diode having an anode connected to another end of the second resistor via a second node, and a cathode connected to the ground point; and a current control circuit configured to generate a control current corresponding to an anode voltage of the first diode so that the current source supplies a reference current corresponding to the control current to the first diode.
G05F 3/24 - Régulation de la tension ou du courant là où la tension ou le courant sont continus utilisant des dispositifs non commandés à caractéristiques non linéaires consistant en des dispositifs à semi-conducteurs en utilisant des combinaisons diode-transistor dans lesquelles les transistors sont uniquement du type à effet de champ
G05F 3/18 - Régulation de la tension ou du courant là où la tension ou le courant sont continus utilisant des dispositifs non commandés à caractéristiques non linéaires consistant en des dispositifs à semi-conducteurs en utilisant des diodes Zener
Provided is a semiconductor device that allows reduction of a measurement time of a PCMTEG and improvement of productivity in an IC manufacturing process. A PCMTEG region 100 formed on a surface of a semiconductor substrate is divided into a main PCMTEG region 101 and a sub-PCMTEG region 102, and TEGs having specifications for their electrical characteristic values are all collectively arranged in the sub-PCMTEG region 102.
A constant voltage circuit includes a depletion transistor having a drain, a gate, and a source, the drain connected to a first power supply terminal, and the gate connected to the source, a voltage division circuit connected between the first power supply terminal and an output terminal, a first enhancement transistor having a drain connected to the source of the depletion transistor, a source connected to the output terminal, and a gate connected to an output terminal of the voltage division circuit, a second enhancement transistor having a source connected to the first power supply terminal, a drain connected to the output terminal, and a gate connected to the drain of the first enhancement transistor, and a pull-down element having one end connected to the output terminal and the other end connected to a second power supply terminal.
G05F 1/575 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final caractérisé par le circuit de rétroaction
G05F 1/59 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de réglage final pour une charge unique
89.
Voltage-current conversion circuit and charge-discharge control device
A voltage-current conversion circuit includes a voltage-current conversion resistor connected to an input terminal, and a current mirror circuit which mirrors a current supplied from the voltage-current conversion resistor, wherein the current mirror circuit is constructed to include a depletion-type transistor whose source voltage is biased to be higher than the substrate voltage.
G05F 1/52 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des tubes à décharge en série avec la charge comme dispositifs de réglage final
G05F 1/56 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final
G05F 3/22 - Régulation de la tension ou du courant là où la tension ou le courant sont continus utilisant des dispositifs non commandés à caractéristiques non linéaires consistant en des dispositifs à semi-conducteurs en utilisant des combinaisons diode-transistor dans lesquelles les transistors sont uniquement du type bipolaire
H02M 3/156 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation
90.
Charge-discharge control circuit including cell balancing circuits, cell balance detection circuits, overcharge detection circuits, and a control circuit
A charge-discharge control circuit includes a first cell balancing circuit having a first switch; a second cell balancing circuit having a second switch; a first cell balance detection circuit having a third switch; a second cell balance detection circuit having a fourth switch; and a control circuit which outputs a control signal to turn on the first switch in a prescribed cycle according to the voltage of a first battery which is higher than or equal to a cell balance detection voltage, or outputs a control signal to turn on the second switch in the prescribed cycle according to the voltage of a second battery which is higher than or equal to the cell balance detection voltage, and outputs a control signal to turn off the third switch and the fourth switch in the prescribed cycle during output of the control signal.
A charge-pump control circuit includes an oscillator which supplies a clock for driving a charge pump driver to supply a first gate voltage to a discharging transistor in order to control discharge from a battery, and driving a charge pump driver to supply a second gate voltage to a charging transistor in order to control charge to the battery, respectively; and a drive control circuit which sets a control target voltage as one of the first gate voltage and the second gate voltage having a lower voltage in order to control generation of the clock by the oscillator according to the control target voltage.
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p.ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
H02J 7/00 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries
92.
Voltage regulator having a phase compensation circuit
A voltage regulator includes an error amplifier which controls the gate of an output transistor so that a feedback voltage based on an output voltage of an output terminal matches a first reference voltage, a first transistor having a gate to which a second reference voltage is supplied, and a first resistor connected between the gate of the output transistor and the source of the first transistor. The first resistor functions as a resistance constituting a phase compensation circuit by a current flowing therethrough in response to a small output current of the output transistor.
G05F 1/575 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final caractérisé par le circuit de rétroaction
G05F 1/59 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de réglage final pour une charge unique
G05F 1/10 - Régulation de la tension ou de l'intensité
H02M 3/156 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
A transmission circuit includes: a resistor with one end connected to a first power supply; an output terminal connected to the other end of the resistor; an inductor with one end connected to the output terminal; a switch with one end connected to the other end of the inductor and the other end connected to a second power supply; a diode in which an anode is connected to the other end of the inductor and one end of the switch and which is conductive when the switch is off and non-conductive when the switch is on; and a load with one end connected to a cathode of the diode and the other end connected to the second power supply.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
94.
Semiconductor device and method of manufacturing the same
A second source portion having an impurity concentration lower than that of a first source portion, both forming a source region, includes a first sub-portion having a depth from a bottom surface of the first source portion down to a second height higher than a first height, and a second sub-portion having an upper surface in contact with a part of a bottom surface of the first sub-portion, one side surface in a second direction perpendicular to a first direction in contact with an outer side surface of the trench, another side surface in the second direction, both side surfaces in the first direction, and a bottom surface in contact with the base layer, and having a depth from a bottom surface of the first sub-portion up to at least the first height.
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 21/266 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions en utilisant des masques
H01L 29/66 - Types de dispositifs semi-conducteurs
A semiconductor device includes a semiconductor substrate having a surface perpendicular to the first direction; a vertical Hall element formed in the semiconductor substrate, and including a magnetosensitive portion having a depth in the first direction, a width in the second direction, and a length in the third direction; and an excitation wiring extending in the third direction and disposed above the semiconductor substrate and at a position that overlaps the center position of the width of the magnetosensitive portion, and the value u derived from Expression (1) is 0.6 or more:
where W is the width of the magnetosensitive portion, Wc/2 is a distance from the center position of the width of the magnetosensitive portion to the first end surface closer thereto, and h is a distance from the center position of the depth of the magnetosensitive portion to the excitation wiring.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
H01L 43/04 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails de dispositifs à effet Hall
A magnetic substance detection sensor includes a support substrate, a semiconductor chip provided on the support substrate and having a magnetic field detection element, a permanent magnet provided on the support substrate, and a resin encapsulation layer covering the semiconductor chip and the permanent magnet. The resin encapsulation layer has a first resin layer exposing the permanent magnet and covering the semiconductor chip, and a second resin layer continuously covering the permanent magnet and the first resin layer, and stress caused by curing contraction of the second resin layer is smaller than that of the first resin layer.
G01R 33/038 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des aimants permanents, p.ex. des balances, des dispositifs à torsion
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
A semiconductor device includes a semiconductor substrate; a vertical Hall element including a magnetosensitive portion, and formed in the semiconductor substrate; and an excitation wiring provided above a surface of the semiconductor substrate and apart from the magnetosensitive portion. The excitation wiring is formed of a single wiring with a plurality of turns. The excitation wiring includes a plurality of main wiring portions arranged side by side, and apart from one another in an overlapping region that overlaps the magnetosensitive portion as viewed in plan view from a direction orthogonal to the surface of the semiconductor substrate; and auxiliary wiring portions connecting each of the plurality of main wiring portions to one another in series.
H01L 43/04 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails de dispositifs à effet Hall
A semiconductor device includes a semiconductor substrate, a trench provided in the semiconductor substrate, a trench gate formed in the trench, a vertical transistor having the trench gate, an active region having the vertical transistor, a field region surrounding the active region and having a protection diode, and a field insulating film formed on a surface of the semiconductor substrate, the protection diode being formed on the field insulating film. The trench gate includes a first polysilicon layer and has an embedded part embedded in the trench and an extension part connected to the embedded part and extending onto the surface of the semiconductor substrate, the protection diode includes a second polysilicon layer thicker than the first polysilicon layer, and an overlapping part having the second polysilicon layer is formed on the extension part.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
A semiconductor device includes a semiconductor substrate: a vertical Hall element formed in the semiconductor substrate, and having a magnetosensitive portion; a first excitation wiring disposed above the magnetosensitive portion, and configured to apply a first calibration magnetic field (M1) to the magnetosensitive portion; and second excitation wirings disposed above the magnetosensitive portion on one side and on another side of the first excitation wiring, respectively, along the first excitation wiring as viewed in plan view from immediately above a front surface of the semiconductor substrate, and configured to apply second calibration magnetic fields (M2) to the magnetosensitive portion.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
H01L 43/04 - Dispositifs utilisant les effets galvanomagnétiques ou des effets magnétiques analogues; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails de dispositifs à effet Hall
This optical latch circuit is provided with: a voltage sensor for making a comparison between a first power generation voltage inputted from a first input terminal and a first threshold voltage set in advance, and outputting a set signal from an assessment output terminal when the first power generation voltage exceeds the first threshold voltage; a first photovoltaic element connected in the forward direction between the first input terminal and a ground point, the first photovoltaic element photovoltaicly outputting, when irradiated with light, a prescribed first power generation voltage to the first input terminal; and a feedback resistor interposed between the first input terminal and the assessment output terminal.
H03K 17/78 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs opto-électroniques, c. à d. des dispositifs émetteurs de lumière et des dispositifs photo-électriques couplés électriquement ou optiquement
