Provided is an optical element in which two or more liquid crystal cells are layered. The two or more liquid crystal cells each include: a first substrate provided with a first connection pad which is electrically connected to a first electrode, and a second connection pad which is electrically connected to a second electrode; and a second substrate provided with a third connection pad which is electrically connected to a third electrode, and a fourth connection pad which is electrically connected to a fourth electrode. The first connection pads, the second connection pads, the third connection pads, and the fourth connection pads, of the two or more liquid crystal cells, are respectively mutually connected, in an electrical manner, via an inter-cell conductive electrode.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
Provided are a communication system, illumination system, and communication method allowing realization of a device connection environment ensuring security without relying on a communication platform or user operation. A slave device (illumination device) generates a security code (A) to which a plurality of random data corresponding to address data are allocated, and a key code (A). In a first process after a communication connection has been established between the slave device and a master device (control device), the slave device transmits the key code (A) and the security code (A) to the master device, and the master device retains the key code (A) as a key code (B) and the security code (A) as a security code (B). In a second process after the first process, the master device transmits to the slave device an address code generated on the basis of the security code (B) and an XOR code (B) generated on the basis of the address code and a second key code, and the slave device cancels the communication connection with the master device if an XOR code (A) generated on the basis of the address code, the key code (A), and the security code (A) does not match the XOR code (B) received from the master device.
H04L 9/32 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système
The present invention improves practicality in subject depth estimation through encoded image capturing. Provided is a liquid crystal optical shutter 1 comprising: a first transparent electrode layer; a second transparent electrode layer 58 which is disposed so as to face the first transparent electrode layer and which has a plurality of transparent segment electrodes; a liquid crystal layer which is disposed between the first transparent electrode layer and the second transparent electrode layer 58; and a light shielding layer 53 in which an opening K2 that includes a light entering region RL of an optical system used for encoded image capturing and that corresponds to a region wider than the light entering region RL is formed and which shields light in a region on the outside of the opening K2, wherein the plurality of segment electrodes include an outer circumferential segment electrode CR5 which corresponds to the outer circumferential region of the light entering region RL and which includes the contour of the opening K2, and a mask is formed by control of electric signals applied to the first transparent electrode layer and the plurality of segment electrodes.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
The present invention improves practicality in estimating subject depth through encoded imaging. A computation control unit 30: captures an encoded image of a subject 90 using a first imaging system 10 having a first field angle α; obtains a first captured image P1; detects a specific object 92 on the basis of the first captured image P1, the specific object 92 being included in the subject 90 and being at a distance equal to or greater than a threshold value from the first imaging system 10; captures an encoded image of the detected specific object 92 using a second imaging system 20 having a second field angle β that is narrower than the first field angle α; obtains a second captured image P2; decodes the first captured image P1 and the second captured image P2; and obtains depth information D1 pertaining to the subject 90 and depth information D2 pertaining to the specific object 92.
H04N 23/95 - Systèmes de photographie numérique, p. ex. systèmes d'imagerie par champ lumineux
G06T 7/557 - Récupération de la profondeur ou de la forme à partir de plusieurs images à partir des champs de lumière, p.ex. de caméras plénoptiques
H04N 23/55 - Pièces optiques spécialement adaptées aux capteurs d'images électroniques; Leur montage
H04N 23/58 - Moyens permettant de modifier le champ de vision de la caméra sans déplacer le corps de la caméra, p. ex. par nutation ou pivotement des optiques ou des capteurs d'images
H04N 23/60 - Commande des caméras ou des modules de caméras
Provided is a fluorescence detection device having improved fluorescence detection sensitivity. The fluorescence detection device comprises a light source that irradiates a sample with circularly polarized excitation light, a sample holding part that holds the sample, a cholesteric liquid crystal layer that transmits fluorescence emitted by the sample due to the excitation light and reflects the excitation light, and a sensor that detects fluorescence transmitted through the cholesteric liquid crystal layer.
This light-emitting element comprises: a substrate that includes amorphous glass; a first buffer layer; a second buffer layer; a gallium nitride layer; a laminated body; and a negative electrode and a positive electrode. The first buffer layer is positioned over the substrate and includes aluminum and oxygen. The second buffer layer is positioned over the first buffer layer and includes aluminum and nitrogen. The gallium nitride layer is positioned over the second buffer layer. The laminated body is positioned over the gallium nitride layer and includes an n-type cladding layer, a p-type cladding layer, and a light-emitting layer between the n-type cladding layer and the p-type cladding layer. The negative electrode and the positive electrode are respectively positioned over the n-type cladding layer and the p-type cladding layer. Each of the n-type cladding layer, the p-type cladding layer, and the light-emitting layer includes elements of Group 13 and elements of Group 15.
H01L 33/12 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les corps semi-conducteurs ayant une structure de relaxation des contraintes, p.ex. couche tampon
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
This radio wave reflection device includes: a plurality of first patch electrodes; a plurality of second patch electrodes that are different in size from the plurality of first patch electrodes; a ground electrode that is provided opposite and at a distance from the plurality of first patch electrodes and the plurality of second patch electrodes; and a liquid crystal layer that is provided between the ground electrode and the plurality of first patch electrodes and the plurality of second patch electrodes. As seen in plan view, the plurality of first patch electrodes and the plurality of second patch electrodes are arranged in a first direction and in a second direction. With a distance between the centers of two adjacent first patch electrodes defined as a distance W1, the second patch electrodes are arranged at positions that are spaced apart from the first patch electrodes by a distance W1/2 parallel to the first direction and a distance W1/2 parallel to the second direction.
A radio wave reflection device equipped with a plurality of reflection elements, a first signal wire which supplies a control signal and extends in a first direction, and a second signal wire which supplies a scanning signal and extends in a second direction which differs from the first direction, wherein each of the plurality of reflection elements has: a plurality of patch electrodes which have different sizes and are electrically connected to one another; a conductive layer which faces the plurality of patch electrodes and is positioned at a distance from the plurality of patch electrodes; a liquid crystal layer positioned between the conductive layer and each of the plurality of patch electrodes; and a switching element which is connected to the first signal wire and the second signal wire, and electrically connects the first signal wire and the plurality of patch electrodes to one another on the basis of the control signal.
This display-panel-integrated electrical wave reflection device includes: a plurality of first patch electrodes; a plurality of second patch electrodes facing the plurality of first patch electrodes, the plurality of second patch electrodes being provided set apart from the plurality of first patch electrodes; an electrode layer located on the side of the plurality of second patch electrodes that is opposite from the side where the plurality of first patch electrodes are provided, the electrode layer facing the plurality of second patch electrodes and being provided set apart from the plurality of second patch electrodes; a first liquid crystal layer provided between the plurality of first patch electrodes and the plurality of second patch electrodes; a first substrate provided between the plurality of second patch electrodes and the electrode layer; an array substrate provided to the side of the electrode layer that is opposite from the side where the first substrate is provided, the array substrate including a plurality of transistors; and a second liquid crystal layer provided between an array layer and the electrode layer.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
G02F 1/1333 - Dispositions relatives à la structure
This radio wave reflection device has: a first substrate (120); a second substrate (122) facing the first substrate; a liquid crystal layer (116) between the first substrate and the second substrate; a first reflective electrode (102) disposed on a surface on the liquid crystal layer side of the first substrate; a ground electrode (104) that overlaps the first reflective electrode while sandwiching the first substrate; and a liquid crystal control element (106) adjacent to the reflective electrode and containing a common electrode (1064) and a first liquid crystal control electrode (1062) disposed to sandwich the liquid crystal layer.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
Disclosed is an inspection method comprising: forming a buffer layer on an amorphous substrate; forming an n-type clad layer, a luminescent layer, and a p-type clad layer each including an inorganic semiconductor, on the buffer layer to thereby form a plurality of semiconductor layers disposed in a matrix arrangement having a plurality of lines and a plurality of rows; forming an anode and a cathode on each of the plurality of semiconductor layers, thereby forming a plurality of luminescent elements; and using a first detector and a second detector to acquire the photoluminescent properties and/or the electroluminescent properties of the plurality of luminescent elements. The buffer layer has the function of accelerating the crystallization of the semiconductor layers. The photoluminescent properties and the electroluminescent properties are each acquired before and after the formation of the anodes and cathodes.
This lighting device comprises: a first holding member that holds a light source; a second holding member including a rotary support that provides support so as enable rotation relative to the first holding member, a panel-holding cover that holds a liquid crystal panel, and a coupling unit that couples the rotary support and the panel-holding cover; a control board; and wiring that extends along a first direction and electrically connects the liquid crystal panel and the control board. The second holding member has a wiring support that supports a portion of the wiring.
This illumination system comprises: a light source; a liquid crystal cell that changes the light distribution angle of light emitted from the light source; and a control device that controls the gradation of the light distribution angle. The liquid crystal cell comprises a first substrate on which first transparent electrodes and second transparent electrodes each extending in a first direction are alternately provided, a second substrate on which third transparent electrodes and fourth transparent electrodes each extending in a second direction crossing the first direction are alternately provided, and a liquid crystal layer between the first substrate and the second substrate. The control device comprises a communication unit that receives gradation information of the light distribution angle from an information communication terminal, a storage unit that stores weighting coefficients associating the amounts of change of the light distribution angle with changes in the gradation of the light distribution angle, and a control unit that, on the basis of the gradation information and the weighting coefficients, calculates first voltage to fourth voltage to be inputted to the first transparent electrode to the fourth transparent electrode.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
F21V 9/40 - CARACTÉRISTIQUES FONCTIONNELLES OU DÉTAILS FONCTIONNELS DES DISPOSITIFS OU SYSTÈMES D'ÉCLAIRAGE; COMBINAISONS STRUCTURALES DE DISPOSITIFS D'ÉCLAIRAGE AVEC D'AUTRES OBJETS, NON PRÉVUES AILLEURS Éléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p.ex. filtres avec des dispositions pour commander les propriétés spectrales, p.ex. la couleur, ou l’intensité
G02F 1/133 - Dispositions relatives à la structure; Excitation de cellules à cristaux liquides; Dispositions relatives aux circuits
This lighting device comprises: a heat sink; a light source that is disposed on one side in the axial direction relative to the heat sink and is cooled by the heat sink; an optical member that is disposed on the one side in the axial direction relative to the light source; and a first attaching member that attaches the light source and the optical member to the heat sink.
F21V 29/77 - Dispositions de refroidissement caractérisées par des éléments passifs de dissipation de chaleur, p.ex. puits thermiques avec ailettes ou lames avec ailettes ou lames en plans divergents essentiellement identiques, p.ex. avec une section en forme d’éventail ou d’étoile
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p.ex. à construction modulaire
F21V 19/00 - Montage des sources lumineuses ou des supports de sources lumineuses sur ou dans les dispositifs d'éclairage
F21V 29/503 - Dispositions de refroidissement caractérisées par l’adaptation au refroidissement de composants spécifiques de sources lumineuses
15.
LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME
This laminated structure comprises: an amorphous substrate that has an insulating surface; an alignment layer that has a pattern on the amorphous substrate; and a semiconductor layer that includes gallium nitride, the semiconductor layer having a pattern on the upper surface of the alignment layer. The angle of a corner that is constituted by the bottom surface and the side surface of the alignment layer is 60-90 degrees. In addition, between the bottom surface and the upper surface of the alignment layer, the width of a cross-section of the alignment layer taken along a plane that is parallel to the bottom surface may be less than the width of the bottom surface of the alignment layer. Furthermore, between the bottom surface and the upper surface of the alignment layer, the width of the cross-section of the alignment layer taken along the plane that is parallel to the bottom surface may be less than the width of the bottom surface of the semiconductor layer.
This layered structure comprises: an amorphous substrate that has an insulating surface; an orientation layer that has a pattern on the amorphous substrate having the insulating surface; a semiconductor layer that contains a gallium nitride and has a pattern disposed on the upper surface of the orientation layer; and a side-surface protection part that contains a gallium nitride and is disposed on a side surface of the orientation layer, the semiconductor layer and the side-surface protection part being spaced apart from each other on the side surface of the orientation layer. A first angle formed by the bottom surface and the side surface of the orientation layer may be 60°-90°. Furthermore, the semiconductor layer contains a gallium nitride having the same composition as the side-surface protection part. The crystallinity of the gallium nitride of the semiconductor layer may be higher than the crystallinity of the gallium nitride of the side-surface protection part.
The present invention provides an optical element capable of arbitrarily processing light incident from a light source and an illumination apparatus including the optical element. An optical element (120) comprises a liquid crystal cell (130), a λ/4 film (150) on the liquid crystal cell, and a reflective plate (160) on the λ/4 film. The liquid crystal cell includes a plurality of first electrodes (136), a first alignment film (142) on the first electrodes, a liquid crystal layer (140) located on the first alignment film, a second alignment film (144) on the liquid crystal layer, and a plurality of second electrodes (138) located on the second alignment film. The plurality of first electrodes extend in a first extension direction and are arranged in a stripe form. The liquid crystal layer contains liquid crystal molecules. The plurality of second electrodes are arranged in a stripe form and extend in a second extension direction that intersects the first extension direction at an angle of 80°-90° inclusive.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
G02F 1/13363 - Association structurelle de cellules avec des dispositifs optiques, p.ex. des polariseurs ou des réflecteurs Éléments à biréfringence, p.ex. pour la compensation optique
G02F 1/1337 - Orientation des molécules des cristaux liquides induite par les caractéristiques de surface, p.ex. par des couches d'alignement
G02F 1/1347 - Disposition de couches ou de cellules à cristaux liquides dans lesquelles un faisceau lumineux est modifié par l'addition des effets de plusieurs couches ou cellules
18.
MULTILAYER STRUCTURE, METHOD FOR PRODUCING MULTILAYER STRUCTURE AND SEMICONDUCTOR DEVICE
This multilayer structure comprises an amorphous substrate that has an insulating surface, an alignment layer that is arranged on the amorphous substrate, and a semiconductor pattern that contains gallium nitride and is arranged on the alignment layer; and the alignment layer has a first region that overlaps with the semiconductor pattern and a second region that does not overlap with the semiconductor pattern. The upper surface of the second region is positioned below the upper surface of the first region. The alignment layer has a groove part in the second region, the groove part extending from the vicinity of the lower end of the semiconductor pattern toward the first region; and when viewed in plan, the groove part overlaps with the semiconductor pattern. The alignment layer has a lateral surface in the first region, the lateral surface being connected to the upper surface of the second region.
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
H01L 21/338 - Transistors à effet de champ à grille Schottky
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H01L 29/812 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à grille Schottky
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
19.
LAMINATED STRUCTURE, MANUFACTURING METHOD FOR LAMINATED STRUCTURE, AND SEMICONDUCTOR DEVICE
The present invention includes: an amorphous substrate having an insulating surface; an alignment pattern formed on the amorphous substrate; an insulating layer that is in contact with a side surface of the alignment pattern and that surrounds a peripheral edge section of the alignment pattern; and a gallium nitride-containing semiconductor pattern formed on the alignment pattern. The insulating layer has a first region that overlaps with the semiconductor pattern, and a second region that does not overlap with the semiconductor pattern. An upper surface of the second region is located below an upper surface of the first region. The insulating layer has, in the second region, a side surface that is continuous with the upper surface of the first region.
H01L 21/338 - Transistors à effet de champ à grille Schottky
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H01L 29/812 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à grille Schottky
H01L 33/22 - Surfaces irrégulières ou rugueuses, p.ex. à l'interface entre les couches épitaxiales
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
20.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
This semiconductor device comprises: an amorphous substrate having an insulating surface; an orientation pattern located on the amorphous substrate; and a semiconductor pattern including gallium nitride and located on the upper surface of the orientation pattern, wherein the orientation pattern includes: a first pattern part in which the angle of the side face relative to the bottom face is a first angle; and a second pattern part in which the angle of the side face relative to the bottom face is a second angle smaller than the first angle, the second pattern part being positioned below the first pattern part.
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
H01L 21/338 - Transistors à effet de champ à grille Schottky
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H01L 29/812 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à grille Schottky
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
Provided is a lighting device capable of more appropriately controlling the change of the light distribution shape of light. This lighting device includes: a light source unit that emits light; a light distribution shape setting unit for setting the light distribution shape of light from the light source unit; a storage unit that stores light distribution shape data relating to the light distribution shape; and a control unit that controls the light distribution shape setting unit on the basis of the light distribution shape data. The light distribution shape setting unit sets the light distribution shape according to a signal level inputted from the control unit, and when changing the signal level inputted to the light distribution shape setting unit from a first level to a second level, the control unit changes the signal level from the first level to a third level between the first level and the second level, and after maintaining the third level for a predetermined time, changes the signal level from the third level to the second level.
H05B 47/105 - Commande de la source lumineuse en réponse à des paramètres détectés
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p.ex. à construction modulaire
F21V 9/40 - CARACTÉRISTIQUES FONCTIONNELLES OU DÉTAILS FONCTIONNELS DES DISPOSITIFS OU SYSTÈMES D'ÉCLAIRAGE; COMBINAISONS STRUCTURALES DE DISPOSITIFS D'ÉCLAIRAGE AVEC D'AUTRES OBJETS, NON PRÉVUES AILLEURS Éléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p.ex. filtres avec des dispositions pour commander les propriétés spectrales, p.ex. la couleur, ou l’intensité
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
G02F 1/1347 - Disposition de couches ou de cellules à cristaux liquides dans lesquelles un faisceau lumineux est modifié par l'addition des effets de plusieurs couches ou cellules
H05B 47/16 - Commande de la source lumineuse par des moyens de minutage
An oxide semiconductor film according to the present invention has a polycrystalline structure and is provided on a substrate; the crystal structure of the oxide semiconductor film is a bixbyite structure; and with respect to the out-of-plane XRD diffraction pattern of the oxide semiconductor film as obtained using a Cu-Kα ray, the ratio of the peak intensity of the (222) plane to the peak intensity of the (422) plane is 3.0 or less. The crystallite diameter as calculated from the peak of the (222) plane may be 10 nm or more.
The present invention provides an illumination system and a control device that can change various settings of a plurality of illumination devices all at once. This illumination system comprises: a light source; a plurality of illumination devices provided on the optical axis of the light source, and provided with an optical element that can set the state of distribution of light emitted from the light source in a first direction, and a second direction intersecting the first direction; and a control device that controls the plurality of illumination devices so as to change the light distribution state. The control device comprises: a touch sensor having a detection region on which a plurality of detection elements are provided; a display panel on which a display region is provided overlapping the touch sensor detection region in plan view; and a first memory circuit that stores setting information including at least the setting value of the light distribution state. When the setting value has been changed, the control device transmits setting information to some or all of the plurality of illumination devices, and each illumination device is provided with a second memory circuit that stores setting information transmitted from the control device.
This optical device includes: a light source; and an optical element that includes a plurality of liquid crystal cells which are layered and that controls distribution of light emitted from the light source. The plurality of liquid crystal cells each include: a first substrate (110-1) in which first electrodes (120-1) and second electrodes (120-2) are arranged alternatingly; a second substrate in which third electrodes and fourth electrodes are arranged alternatingly; and a liquid crystal layer between the first substrate and the second substrate. The first electrodes and the second electrodes each include: a first linear section (LP11) that extends at an angle α° with respect to a first direction; and a second linear section (LP 12) that extends at an angle β° with respect to the first direction. The third electrodes and the fourth electrodes each include: a third linear section that extends at an angle (90+α)° with respect to the first direction; and a fourth linear section that extends at an angle (90+β)° with respect to the first direction.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
G02F 1/1347 - Disposition de couches ou de cellules à cristaux liquides dans lesquelles un faisceau lumineux est modifié par l'addition des effets de plusieurs couches ou cellules
This detection device (1) comprises: a housing (200) which has a light-blocking first surface and a translucent second surface facing the first surface; a light source (60) which is provided within a first region (200A) of the housing (200) and which emits light such that the light is outputted from the second surface in contact with a measurement subject and travels toward the measurement subject; first light sensors (10A) that are provided within the first region (200A) of the housing (200) and are capable of receiving the light from the second surface; and second light sensors (10B) that are provided within a second region (200B), different from the first region (200A), of the housing (200). The housing (200) has openings (230) which are formed in the first surface in the second region (200B) and which allow light from the outside of the housing (200) to pass therethrough to the interior of the housing (200). The second light sensors (10B) receive light from the openings (230) and block light on the side facing the second surface.
A61B 5/02 - Mesure du pouls, du rythme cardiaque, de la pression sanguine ou du débit sanguin; Détermination combinée du pouls, du rythme cardiaque, de la pression sanguine; Evaluation d'un état cardio-vasculaire non prévue ailleurs, p.ex. utilisant la combinaison de techniques prévues dans le présent groupe et des techniques d'électrocardiographie; Sondes cardiaques pour mesurer la pression sanguine
A61B 5/0245 - Mesure du pouls ou des pulsations cardiaques utilisant des capteurs engendrant des signaux électriques
A61B 5/1171 - Identification des personnes basée sur la morphologie ou l’aspect de leur corps ou de parties de celui-ci
A61B 5/1172 - Identification des personnes basée sur la morphologie ou l’aspect de leur corps ou de parties de celui-ci utilisant des empreintes digitales
A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p.ex. de la concentration des gaz dans le sang, de la valeur du pH du sang en utilisant des capteurs optiques, p.ex. des oxymètres à photométrie spectrale
According to this method for testing a radio wave reflecting device, which has a plurality of reflection elements arranged in a row direction and in a column direction, the plurality of reflection elements each has: a patch electrode; a common electrode lying on the side of the back surface of the patch electrode; and a liquid crystal layer located between the patch electrode and the common electrode. A voltage V1 is applied between each of the plurality of patch electrodes and the common electrode, thereby determining whether the reflection elements are good or bad on the basis of the change of a frame-shaped area appearing around the plurality of patch electrodes seen in a plan view when the voltage is applied between the plurality of patch electrodes and the common electrode.
H01Q 3/36 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante faisant varier la phase par des moyens électriques avec des déphaseurs variables
This transistor includes: an amorphous substrate; a first buffer layer on the amorphous substrate; a first nitride semiconductor layer that is provided in an island shape on the first buffer layer; a second nitride semiconductor layer that is on the first nitride semiconductor layer and covers the first nitride semiconductor layer; and a gate electrode layer that is on the second nitride semiconductor layer and overlaps with the first nitride semiconductor layer.
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 21/338 - Transistors à effet de champ à grille Schottky
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H01L 29/812 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à grille Schottky
This laminate structure has an underlying insulating layer, a metal oxide layer disposed on the underlying insulating layer, and an oxide semiconductor layer disposed in contact with the metal oxide layer. The oxide semiconductor layer has a region in which a metal element, this metal element being the same as a metal element contained in the metal oxide layer, exhibits a concentration gradient, wherein the concentration gradient of the metal element exhibits an increase as the metal oxide layer/oxide semiconductor layer interface is approached.
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
This thin-film transistor comprises: a substrate; a metal oxide layer provided on the substrate; an oxide semiconductor layer that is provided in contact with the metal oxide layer and that contains a plurality of crystal grains; a gate electrode provided on the oxide semiconductor layer; and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode. The plurality of crystal grains include a crystal boundary in which the crystal orientation difference between two adjacent measurement points obtained by EBSD (electron beam backscatter diffraction) method exceeds 5°, and the average value of KAM values calculated using the EBSD method is 1.4° or greater.
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
30.
OXIDE SEMICONDUCTOR FILM, THIN-FILM TRANSISTOR, AND ELECTRONIC DEVICE
This oxide semiconductor film is provided on a substrate and includes a plurality of crystal grains. The oxide semiconductor film includes indium (In), and a first metal element selected from the group consisting of aluminum (Al), gallium (Ga), yttrium (Y), scandium (Sc), and lanthanide elements. The plurality of crystal grains include a crystal grain boundary that is defined when the crystal orientation difference of two adjacent measurement points, as obtained by an electron backscatter diffraction (EBSD) method, exceeds 5°, and the average KAM value as calculated by the EBSD method is 1.0° or greater. The average value of change in the crystal grain boundary orientation as calculated by the EBSD method may be 40° or less.
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale
H01L 21/203 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
H01L 21/336 - Transistors à effet de champ à grille isolée
31.
FILM FORMATION DEVICE AND METHOD FOR FORMING GALLIUM NITRIDE FILM
This film formation device includes a vacuum chamber, a substrate support part that supports a substrate, a target support part that supports a target including nitrogen and gallium, a sputtering gas supply unit that supplies a sputtering gas to the vacuum chamber, a sputtering power source that applies a voltage to the target, a first radical supply source that is capable of supplying a nitrogen radical and a hydrogen radical to the vacuum chamber, and a control unit, the control unit controlling the sputtering gas supply unit, the sputtering power source, and the first radical supply source so that a first period in which the sputtering gas, the nitrogen radical, and the hydrogen radical are supplied to the vacuum chamber and a voltage is applied to the target, and a second period in which a voltage is applied to the target without the nitrogen radical and the hydrogen radical being supplied to the vacuum chamber, are repeated.
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
2233radical; and a control part that controls the sputtering gas supply part, the sputtering power supply, the first radical supply source, and the second radical supply source.
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01L 21/203 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
A display device according to the present invention comprises a substrate, and a plurality of pixels and at least one reflective element positioned on the substrate. Each of the plurality of pixels comprises a pixel circuit and a light-emitting element, and the light-emitting element comprises a pixel electrode electrically connected with the pixel circuit, a first laminated structure on the pixel electrode, and a common electrode on the first laminated structure. The at least one reflective element has a lower electrode, a second laminated structure on the lower electrode, and a reflective film that overlaps the second laminated structure. The first laminated structure and the second laminated structure each include a plurality of inorganic semiconductor layers.
G09F 9/00 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p.ex. à diodes
H01L 33/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails
H01L 33/60 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique Éléments réfléchissants
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
H05B 33/10 - Appareils ou procédés spécialement adaptés à la fabrication des sources lumineuses électroluminescentes
H05B 33/12 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions
H05B 33/14 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition du matériau électroluminescent
H05B 33/22 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition des couches auxiliaires diélectriques ou réfléchissantes
H05B 33/26 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition ou la disposition du matériau conducteur utilisé comme électrode
H05B 33/28 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition ou la disposition du matériau conducteur utilisé comme électrode des électrodes translucides
H10K 59/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière couvert par le groupe
The present invention provides an illumination device and an illumination system with which it is possible to realize dynamic light distribution control using 1/f fluctuation. The present invention comprises: a light source; an optical element that is provided on an optical axis of the light source, and that controls the light distribution status of light emitted from the light source in two directions, a first direction and a second direction different from the first direction; and a processing circuit that executes at least light distribution control processing of the optical element. The processing circuit dynamically controls the light distribution status of at least one of the first direction and the second direction using 1/f fluctuation on the basis of the light distribution setting value which is the setting value for executing light distribution control processing.
H05B 47/105 - Commande de la source lumineuse en réponse à des paramètres détectés
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p.ex. à construction modulaire
F21V 9/40 - CARACTÉRISTIQUES FONCTIONNELLES OU DÉTAILS FONCTIONNELS DES DISPOSITIFS OU SYSTÈMES D'ÉCLAIRAGE; COMBINAISONS STRUCTURALES DE DISPOSITIFS D'ÉCLAIRAGE AVEC D'AUTRES OBJETS, NON PRÉVUES AILLEURS Éléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p.ex. filtres avec des dispositions pour commander les propriétés spectrales, p.ex. la couleur, ou l’intensité
H05B 47/16 - Commande de la source lumineuse par des moyens de minutage
H05B 47/165 - Commande de la source lumineuse en suivant une séquence programmée pré-assignée; Commande logique [LC]
A detection device according to the present invention has a plurality of photodiodes that are provided to a substrate, a light source that is arranged opposite the photodiodes, and a liquid crystal panel that is arranged between the photodiodes and the light source in the direction perpendicular to the substrate. The liquid crystal panel has a plurality of pixels. As seen in plan view, the photodiodes are larger than each of the pixels and are arranged at positions that coincide with pluralities of pixels. The liquid crystal panel puts at least one pixel of the plurality of pixels that coincide with a photodiode in a transmission state and puts the other pixels in a non-transmission state.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
This detection device has: a plurality of photodiodes provided on a substrate; a plurality of light emission parts arranged opposite to the plurality of photodiodes; and a collimating lens that is arranged between the plurality of photodiodes and the light emission parts and that enables emission of parallel light toward the plurality of photodiodes. Among the plurality of light emission parts, at least one light emission part is set to a lighting state, and the other light emission parts are set to a non-lighting state. The emission angle of parallel light from the collimating lens differs according to the position of the light emission part in the lighting state.
Provided is a fluorescence detection device with improved fluorescence detection sensitivity. The fluorescence detection device comprises: a light source that irradiates a sample with a circularly polarized excitation light; a cholesteric liquid crystal layer that transmits fluorescence emitted by the sample due to irradiation with the excitation light and reflects the excitation light; and a detection circuit that detects fluorescence transmitted by the cholesteric liquid crystal layer.
A detection device (1) comprises: a light source (60); a plurality of optical sensors (10) arranged to be able to receive light from the light source (60) and having different sizes of light receiving areas; a detection circuit (112) that is electrically connected to each of the plurality of optical sensors (10) and detects waveform data that can identify the amount of light received by each of the plurality of optical sensors (10); and a control circuit (121) that selects at least one piece of waveform data of which the waveform amplitude satisfies a selection condition, from among a plurality of pieces of waveform data detected from the plurality of optical sensors (10).
H01L 31/12 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails structurellement associés, p.ex. formés dans ou sur un substrat commun, avec une ou plusieurs sources lumineuses électriques, p.ex. avec des sources lumineuses électroluminescentes, et en outre électriquement ou optiquement couplés avec lesdites sour
A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p.ex. de la concentration des gaz dans le sang, de la valeur du pH du sang en utilisant des capteurs optiques, p.ex. des oxymètres à photométrie spectrale
This light control device (100) comprises a panel unit in which a plurality of light control panels are layered. The light control panels have a first substrate, a second substrate, a liquid crystal layer (4), a first seal material (5) which extends along edges of the liquid crystal layer (4) and in which an injection opening (50) is provided, and a second seal material (6) that seals the injection opening (50), and the second seal material (6) protrudes to the outside from the edge of the light control panel as viewed from a first direction. When each of the plurality of light control panels is considered in sequence as a single light control panel, the second seal material (6) in each single light control panel is positioned inside of the edges of the light control panels other than the single light control panel as viewed from the first direction.
G02F 1/1347 - Disposition de couches ou de cellules à cristaux liquides dans lesquelles un faisceau lumineux est modifié par l'addition des effets de plusieurs couches ou cellules
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
G02F 1/1339 - Dispositions relatives à la structure Éléments d'espacement; Scellement des cellules
G02F 1/1341 - Remplissage ou fermeture des cellules
This driving method is for a radio wave reflection device, which has a plurality of reflecting elements arrayed in a row direction and a column direction and which controls an amount of phase change in reflected waves with a voltage applied to the plurality of reflecting elements, and is characterized by: dividing the arrays of the plurality of reflecting elements into a first region for controlling the amount of phase change for every column of each of a plurality of reflecting elements arrayed in the column direction, and a second region for controlling the amount of phase change for every two adjacent columns of a plurality of reflecting elements arrayed in the column direction; and simultaneously driving each of the plurality of reflecting elements belonging to the first region and the second region.
Provided is a technology for detecting a neutron ray or an X-ray with low illuminance while reducing the pixel area of sensor pixels and maintaining a layout symmetry. This detection device has a plurality of photo sensors and signal read-out lines, and each of the plurality of photo sensors has a photodiode and an amplification circuit. The plurality of amplification circuits provided to the plurality of photo sensors are connected in series, the output of each of the plurality of photodiodes is connected to the input of each of the plurality of amplification circuits via a selective switch circuit, and the outputs of the plurality of amplification circuits are respectively connected to the signal read-out lines via read-out switch circuits.
Provided are a detection apparatus and a wearable device which are capable of acquiring desired biological information. The detection apparatus comprises: a plurality of optical sensors (PD) arranged on a detection surface; a light source that irradiates light onto the optical sensors (PD); an AFE circuit that acquires a detection value from each of the plurality of optical sensors (PD); and a signal processing circuit that acquires prescribed biological information on the basis of first time domain data obtained by acquiring detection values in a time series. The signal processing circuit converts the first time domain data to a time domain matrix, subjects the time domain matrix to singular value decomposition, inversely calculates second time domain data on the basis of a prescribed singular value from among a plurality of singular values obtained as the results of the singular value decomposition, and uses the second time domain data to acquire, as image information, biological information that changes in a time series.
A61B 5/02 - Mesure du pouls, du rythme cardiaque, de la pression sanguine ou du débit sanguin; Détermination combinée du pouls, du rythme cardiaque, de la pression sanguine; Evaluation d'un état cardio-vasculaire non prévue ailleurs, p.ex. utilisant la combinaison de techniques prévues dans le présent groupe et des techniques d'électrocardiographie; Sondes cardiaques pour mesurer la pression sanguine
A61B 5/0245 - Mesure du pouls ou des pulsations cardiaques utilisant des capteurs engendrant des signaux électriques
The present invention addresses the problem of realizing a large-screen display device by disposing a plurality of display devices in parallel. The specific means are as described below. Provided is a display device including a first display device 1 and a second display device 2 that are disposed in parallel. The display device is characterized in that: the first display device 1 has a configuration in which a first transparent display panel 6 is sandwiched between a first transparent protection plate 500 and a second transparent protection plate 600; an end of the first transparent display panel 6 is retreated more inward than ends of the first transparent protection plate 500 and the second transparent protection plate 600; the second display device 2 has a configuration in which a second transparent display panel 7 is sandwiched between a third transparent protection plate 500 and a fourth transparent protection plate 600; the second transparent display panel 7 includes a protrusion protruding more outward than ends of the third transparent protection plate 500 and the fourth transparent protection plate 600; and the protrusion of the second transparent display panel 7 is sandwiched between the first transparent protection plate 500 and the second transparent protection plate 600.
G09F 9/40 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le caractère désiré est sélectionné parmi plusieurs caractères disposés les uns à coté des autres, p.ex. sur une plaque support commune
G02F 1/1333 - Dispositions relatives à la structure
G09F 9/00 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
44.
IMAGE-CAPTURING DEVICE, SUBJECT DEPTH ESTIMATION METHOD, AND PROGRAM
The present invention improves practicality in subject depth estimation through encoded image-capturing. Provided is a subject depth estimation method which involves: acquiring captured unmasked images by capturing a subject in a state where a mask is not present; determining a representative edge direction on the basis of an edge image included in the captured unmasked image; selecting, from among a plurality of masks prepared in advance, a combination of masks of which depth estimation accuracies for an object, which corresponds to an image that represents an edge in the same direction as the representative edge, are relatively the highest; using each mask included in the selected combination of masks to capture the subject and acquire a plurality of captured masked images; and calculating depth estimation values at a plurality of positions in the subject by performing, on the plurality of captured masked images, decoding processes based on point spread functions that are unique to the selected masks, respectively.
This radio wave reflection device includes: a plurality of first patch electrodes; a plurality of second patch electrodes different in size from the plurality of first patch electrodes; a ground electrode provided opposite and at a distance from the plurality of first patch electrodes and the plurality of second patch electrodes; and a liquid crystal layer provided between the ground electrode and the plurality of first patch electrodes and plurality of second patch electrodes. The plurality of first patch electrodes and the plurality of second patch electrodes are arranged alternately in a first direction or in a second direction intersecting the first direction. The first patch electrodes are adjacent to the second patch electrodes, respectively, in the first direction or in the second direction.
H01Q 3/44 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier les caractéristiques électriques ou magnétiques des dispositifs de réflexion, de réfraction ou de diffraction associés à l'élément rayonnant
A camera module according to an embodiment of the present invention comprises: an imaging element; and a liquid crystal panel. The liquid crystal panel includes an opening disposed at a position for causing light to enter the imaging element, a liquid crystal layer disposed at a position overlapping the opening, an electrode disposed at a position overlapping the liquid crystal layer, and a driver that drives the liquid crystal layer by applying a voltage to the electrode. The driver drives the liquid crystal layer on the basis of a first control value, and drives the liquid crystal layer on the basis of a second control value. A first image captured by driving the liquid crystal layer on the basis of the first control value is used for calculating the distance to an object having a first luminance. A second image captured by driving the liquid crystal layer on the basis of the second control value is used for calculating the distance to an object having a second luminance.
G03B 11/00 - Filtres ou autres intercepteurs spécialement adaptés pour les besoins photographiques
G03B 15/00 - Procédés particuliers pour prendre des photographies; Appareillage à cet effet
G03B 30/00 - Modules photographiques comprenant des objectifs et des unités d'imagerie intégrés, spécialement adaptés pour être intégrés dans d'autres dispositifs, p.ex. des téléphones mobiles ou des véhicules
H04N 23/55 - Pièces optiques spécialement adaptées aux capteurs d'images électroniques; Leur montage
H04N 23/57 - Caméras ou modules de caméras comprenant des capteurs d'images électroniques; Leur commande - Détails mécaniques ou électriques de caméras ou de modules de caméras spécialement adaptés pour être intégrés dans d'autres dispositifs
H04N 23/73 - Circuits de compensation de la variation de luminosité dans la scène en influençant le temps d'exposition
H04N 23/75 - Circuits de compensation de la variation de luminosité dans la scène en agissant sur la partie optique de la caméra
47.
ILLUMINATION DEVICE CONTROL DEVICE AND ILLUMINATION SYSTEM
Provided are an illumination device control device with which it is possible to intuitively set the diffusibility of light in two directions, and an illumination system. The illumination device control device is capable of controlling the diffusibility of light in a first direction and a second direction. An optical diffusibility setting screen for performing an optical diffusibility setting process for the illumination device is displayed in a display region (DA). The display region (DA) overlaps a touch sensor detection region (FA). In the optical diffusibility setting screen, an XY plane is defined in which the X-direction corresponds to the first direction and the Y-direction corresponds to the second direction, with a predetermined position in the optical diffusibility setting screen being located at the origin (O). The optical diffusibility setting screen is provided with: an optical-distribution shape object (OBJ) that has a central point at the origin (O) of the XY plane; a first slider (first optical diffusibility setting object S1) that has a central point at the position (x0) of an intersection point of the X-axis of the XY plane and the outline of the optical-distribution shape object (OBJ); and a second slider (second optical diffusibility setting object S2) that has a central point at the position (y0) of an intersection point of the Y-axis of the XY plane and the outline of the optical-distribution shape object (OBJ).
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p.ex. à construction modulaire
F21V 9/40 - CARACTÉRISTIQUES FONCTIONNELLES OU DÉTAILS FONCTIONNELS DES DISPOSITIFS OU SYSTÈMES D'ÉCLAIRAGE; COMBINAISONS STRUCTURALES DE DISPOSITIFS D'ÉCLAIRAGE AVEC D'AUTRES OBJETS, NON PRÉVUES AILLEURS Éléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p.ex. filtres avec des dispositions pour commander les propriétés spectrales, p.ex. la couleur, ou l’intensité
F21V 14/00 - Commande de la distribution de la lumière émise par réglage d’éléments constitutifs
F21V 14/08 - Commande de la distribution de la lumière émise par réglage d’éléments constitutifs par un mouvement d'écrans
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
G02F 1/1333 - Dispositions relatives à la structure
G02F 1/1337 - Orientation des molécules des cristaux liquides induite par les caractéristiques de surface, p.ex. par des couches d'alignement
G02F 1/1347 - Disposition de couches ou de cellules à cristaux liquides dans lesquelles un faisceau lumineux est modifié par l'addition des effets de plusieurs couches ou cellules
G06F 3/0481 - Techniques d’interaction fondées sur les interfaces utilisateur graphiques [GUI] fondées sur des propriétés spécifiques de l’objet d’interaction affiché ou sur un environnement basé sur les métaphores, p.ex. interaction avec des éléments du bureau telles les fenêtres ou les icônes, ou avec l’aide d’un curseur changeant de comport
G06F 3/0488 - Techniques d’interaction fondées sur les interfaces utilisateur graphiques [GUI] utilisant des caractéristiques spécifiques fournies par le périphérique d’entrée, p.ex. des fonctions commandées par la rotation d’une souris à deux capteurs, ou par la nature du périphérique d’entrée, p.ex. des gestes en fonction de la pression exer utilisant un écran tactile ou une tablette numérique, p.ex. entrée de commandes par des tracés gestuels
This radio wave reflection device is provided with a patch electrode, a common electrode, a liquid crystal layer sandwiched between the patch electrode and the common electrode, and a metal film disposed on the opposite side of the common electrode from the liquid crystal layer side, wherein the metal film is disposed to be separate from the common electrode and the patch electrode is disposed to overlap the metal film. Provided that a value obtained by multiplying the distance T between the common electrode and the metal film by a wavelength λ of a radio wave radiated to the patch electrode is x, x may be 0.02-0.34. Further, x may be 0.10-0.22.
This gallium nitride-based semiconductor device comprises: an amorphous substrate; an orientation control layer on the amorphous substrate; a gallium nitride-based semiconductor layer on the orientation control layer; and at least one electrode in contact with the gallium nitride-based semiconductor layer. The at least one electrode uses a metal material as a vapor deposition material, and has the metal material formed on a crystalline gallium nitride-based semiconductor layer using a vacuum vapor deposition method using a resistance heating vapor source.
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/203 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
A semiconductor device according to the present invention comprises: a metal oxide layer provided on an insulating surface and having aluminum as a main component; an oxide semiconductor layer provided on the metal oxide layer; a gate electrode facing the oxide semiconductor layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode. The water contact angle at the top surface of the metal oxide layer is less than 20°.
The purpose of the present embodiment is to provide an electronic device in which the occurrence of lines can be suppressed, and a decrease in precision can be suppressed. This electronic device comprises a first lower electrode connected to a first upper electrode, a second lower electrode connected to a second upper electrode, a third lower electrode connected to a third upper electrode, a fourth lower electrode connected to a fourth upper electrode, and a fifth lower electrode connected to a fifth upper electrode, the second lower electrode overlapping the first upper electrode and the second upper electrode, the third lower electrode overlapping the first upper electrode and the third upper electrode, the fourth lower electrode overlapping the second upper electrode, the third upper electrode, and the fourth upper electrode, and the fifth lower electrode overlapping the second upper electrode, the third upper electrode, and the fifth upper electrode.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
G02F 1/1333 - Dispositions relatives à la structure
A thin-film transistor (10) includes: an oxide semiconductor layer (140) provided on a substrate (100) and having a polycrystalline structure; a gate electrode (160) provided on the oxide semiconductor layer; and a gate insulation layer (150) provided between the oxide semiconductor layer and the gate electrode. The oxide semiconductor layer includes: a first region (141) which overlaps the gate electrode and has a first carrier concentration (n1); a second region (142) which does not overlap the gate electrode and has a second carrier concentration (n2); and a third region (143) which is between the first region and the second region and overlaps the gate electrode. The second carrier concentration is greater than the first carrier concentration, the carrier concentration in the third region decreases in a channel length direction running from the second region toward the first second region, and the length of the third region in the channel length direction is 0.00 μm or more and 0.60 μm or less.
This optical element comprises a first liquid crystal cell, a second liquid crystal cell, a third liquid crystal cell, and a fourth liquid crystal cell, which are disposed in order so as to overlap each other. The first, second, third, and fourth liquid crystal cells each include a plurality of first electrodes arranged like stripes and extending in a first extension direction, a first orientation film located on the plurality of first electrodes, a liquid crystal layer located on the first orientation film, a second orientation film located on the liquid crystal layer, and a plurality of second electrodes located on the second orientation film, arranged like stripes, extending in a second extension direction, and intersecting the plurality of first electrodes. Further detailed structures are described in the description.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
G02F 1/1337 - Orientation des molécules des cristaux liquides induite par les caractéristiques de surface, p.ex. par des couches d'alignement
G02F 1/1347 - Disposition de couches ou de cellules à cristaux liquides dans lesquelles un faisceau lumineux est modifié par l'addition des effets de plusieurs couches ou cellules
54.
LAMINATE STRUCTURE, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR DEVICE INCLUDING LAMINATE STRUCTURE
This laminate structure (100) comprises a buffer layer (106), a first semiconductor layer (108), and a second semiconductor layer (110). The buffer layer and the first semiconductor layer overlap one another in a vertical direction. The second semiconductor layer is in contact with a side surface of the first semiconductor layer and surrounds at least part of the first semiconductor layer in a plan view perpendicular to the vertical direction. The first semiconductor layer and the second semiconductor layer each contain a group III-V material or a group III nitride material. The crystallinity of the first semiconductor layer is higher than the crystallinity of the second semiconductor layer. The buffer layer is exposed from the second semiconductor layer in the vertical direction.
C09K 11/62 - Substances luminescentes, p.ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant du gallium, de l'indium ou du thalium
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale
A semiconductor device (10) including: a metal oxide layer (130) that includes aluminum and is on an insulating surface; and an oxide semiconductor layer (140) that is on the metal oxide layer, wherein the oxide semiconductor layer includes a first crystal region (144) that is in contact with the metal oxide layer, and a second crystal region (145) that is in contact with the first crystal region and has a larger area than the first crystal region in a cross-sectional view of the oxide semiconductor layer, and the first crystal region and the second crystal region differ with regard to at least one of crystal structure and crystal orientation. The oxide semiconductor layer includes two or more metals that include indium, and the proportion of indium among the two or more metals in the oxide semiconductor layer may be 50% or more.
This detection device comprises: a light sensor; a light source that projects light to the light sensor; a detection signal amplifying circuit that coverts, to voltage, the fluctuations in the current supplied from the light sensor; and an A/D conversion circuit that converts the voltage-converted output voltage signal to a digital-value detection value (Raw). In a state where the light source is off, the A/D conversion circuit operates so that the detection value (Raw) is limited to the maximum gradient (Raw_max) or the minimum gradient (Raw_min) of the digital value.
A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p.ex. de la concentration des gaz dans le sang, de la valeur du pH du sang en utilisant des capteurs optiques, p.ex. des oxymètres à photométrie spectrale
A61B 5/02 - Mesure du pouls, du rythme cardiaque, de la pression sanguine ou du débit sanguin; Détermination combinée du pouls, du rythme cardiaque, de la pression sanguine; Evaluation d'un état cardio-vasculaire non prévue ailleurs, p.ex. utilisant la combinaison de techniques prévues dans le présent groupe et des techniques d'électrocardiographie; Sondes cardiaques pour mesurer la pression sanguine
This method for manufacturing semiconductor device includes: forming an oxide semiconductor layer on a substrate through the sputtering method; placing the substrate having the oxide semiconductor layer formed thereon in a heating furnace with a heating medium maintained at a set temperature in advance to apply first heating processing to the oxide semiconductor layer; forming a gate insulation layer on the oxide semiconductor layer after the first heating processing; and forming a gate electrode on the gate insulation layer. During the placement of the substrate in the heating furnace, a temperature decrease of the heating medium is suppressed within 15% of the set temperature.
The camera module according to an embodiment of the present invention comprises: an imaging element; a liquid crystal panel which is provided with an incident light control area including first to fourth light transmissive areas, a liquid crystal layer, and a driver for driving the liquid crystal layer; and a lens. The sizes of the third and fourth light transmissive areas are smaller than the sizes of the first and second light transmissive areas. A first distance to a subject is calculated on the basis of a first image based on light which has passed through the first light transmissive area and the lens and is made incident to the imaging element and a second image based on light which has passed through the second light transmissive area and the lens and is made incident to the imaging element. A second distance to the subject is calculated on the basis of a third image based on light which has passed through the third light transmissive area and the lens and is made incident to the imaging element and a fourth image based on light which has passed through the fourth light transmissive area and the lens and is made incident to the imaging element.
G03B 15/00 - Procédés particuliers pour prendre des photographies; Appareillage à cet effet
G01C 3/06 - Utilisation de moyens électriques pour obtenir une indication finale
G02B 7/36 - Systèmes pour la génération automatique de signaux de mise au point utilisant des techniques liées à la netteté de l'image
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
H04N 23/55 - Pièces optiques spécialement adaptées aux capteurs d'images électroniques; Leur montage
H04N 23/60 - Commande des caméras ou des modules de caméras
A detection device (1) comprises: a housing (200); a light source (60) that is provided to the housing (200) so as to enable an irradiation side which is outside of the housing (200) to be irradiated; a light sensor (10) that is provided in the housing (200) so as to be aligned with the light source (60) in a first direction of the housing (200) and that is capable of detecting light incident from the irradiation side of the light source (60); and a reflection member (80) that is provided in the housing (200) so as to be positioned between the light source (60) and the light sensor (10) and that is capable of reflecting the incident light towards the irradiation side of the light source (60).
Provided is a gallium nitride semiconductor device comprising: an amorphous glass substrate; a gallium nitride semiconductor layer on a first surface of the amorphous glass substrate; and a compensation layer on a second surface of the amorphous glass substrate. The coefficient of thermal expansion of the compensation layer is greater than the coefficient of thermal expansion of the amorphous glass substrate, and less than the coefficient of thermal expansion of the gallium nitride semiconductor layer.
H01L 21/203 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 21/337 - Transistors à effet de champ à jonction PN
H01L 21/338 - Transistors à effet de champ à grille Schottky
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H01L 29/808 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à jonction PN
H01L 29/812 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à grille Schottky
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
This detection device comprises a substrate and a photodiode disposed on the substrate in which a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode are stacked in this order. In a plan view, the lower electrode is provided extending from a region overlapping an organic semiconductor layer including the lower buffer layer, the active layer, and the upper buffer layer, to a region outside a side surface of the organic semiconductor layer. Further, a detection device comprises a plurality of the photodiodes, wherein a plurality of the lower electrodes are arrayed respectively corresponding to the plurality of photodiodes and extend to a region outside the side surface of the organic semiconductor layer in at least a first direction. A plurality of the photodiodes are arrayed in a second direction intersecting the first direction, and the upper electrode is provided extending across the plurality of photodiodes in the second direction.
Provided is a gallium nitride film formation method comprising disposing a substrate in a vacuum chamber so as to be opposite from a target including nitrogen and gallium, heating the substrate, supplying a sputtering gas to the vacuum chamber, supplying nitrogen radicals and hydrogen radicals to the vacuum chamber, and applying a voltage to the target to generate a plasma of the sputtering gas. Deposited on the substrate are gallium nitride which is produced by a recombination reaction between the nitrogen radicals and gallium released from the gallium of the target, and gallium nitride which is produced by a recombination reaction between gallium positive ions produced from the gallium of the target and nitrogen negative ions produced from the nitrogen radicals.
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
H01L 21/203 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
H01L 33/32 - Matériaux de la région électroluminescente contenant uniquement des éléments du groupe III et du groupe V de la classification périodique contenant de l'azote
A dimmer device according to the present invention comprises an annular first frame, second frame, third frame, and plurality of dimmer panels laminated in a first direction. The first frame has a first tab which protrudes to one side in the first direction, and the second frame has a first notch which engages the first tab, and a second tab protruding to one side in the first direction. The third frame has a second notch which engages the second tab. The dimmer panels are disposed between the first frame and the second frame and between the second frame and the third frame.
G02F 1/1333 - Dispositions relatives à la structure
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
G02F 1/1347 - Disposition de couches ou de cellules à cristaux liquides dans lesquelles un faisceau lumineux est modifié par l'addition des effets de plusieurs couches ou cellules
A detection device (1) comprises: a ring-shaped housing (200); a light source (60) provided in the housing (200); a first light sensor (10A) provided in the housing (200) so as to be adjacent to one end (61) of the light source (60) in the circumferential direction of the housing (200); and a second light sensor (10B) provided in the housing (200) so as to be adjacent to an opposite end (62) of the light source (60) in the circumferential direction (200C) of the housing (200). At least the first light sensor (10A) is an organic photodiode including a sensor substrate, a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode.
A61B 5/1171 - Identification des personnes basée sur la morphologie ou l’aspect de leur corps ou de parties de celui-ci
A61B 5/02 - Mesure du pouls, du rythme cardiaque, de la pression sanguine ou du débit sanguin; Détermination combinée du pouls, du rythme cardiaque, de la pression sanguine; Evaluation d'un état cardio-vasculaire non prévue ailleurs, p.ex. utilisant la combinaison de techniques prévues dans le présent groupe et des techniques d'électrocardiographie; Sondes cardiaques pour mesurer la pression sanguine
A61B 5/0245 - Mesure du pouls ou des pulsations cardiaques utilisant des capteurs engendrant des signaux électriques
A61B 5/1172 - Identification des personnes basée sur la morphologie ou l’aspect de leur corps ou de parties de celui-ci utilisant des empreintes digitales
G01N 21/49 - Dispersion, c. à d. réflexion diffuse dans un corps ou dans un fluide
H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails
H01L 31/10 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
H01L 31/12 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails structurellement associés, p.ex. formés dans ou sur un substrat commun, avec une ou plusieurs sources lumineuses électriques, p.ex. avec des sources lumineuses électroluminescentes, et en outre électriquement ou optiquement couplés avec lesdites sour
Provided is a small size detection device that can easily house, in an annular housing thereof, a battery, a light source, and a light sensor having multiple photodiodes. This detection device comprises: an annular housing; a first flexible substrate provided along the shape of the annular housing; a battery provided to the first flexible substrate; a light source provided to the first flexible substrate; a coil for charging the battery provided to the first flexible substrate; a second flexible substrate; multiple photodiodes provided to a detection region of the second flexible substrate; and a sheet-like light sensor. In the light sensor, one end of the second flexible substrate is laid over one end of the first flexible substrate so as to have the first and second flexible substrates electrically connected with each other. The coil is disposed at a position that is different from those of the light source and the one end of the first flexible substrate and that is located between the light source and the one end of the first flexible substrate.
A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p.ex. de la concentration des gaz dans le sang, de la valeur du pH du sang en utilisant des capteurs optiques, p.ex. des oxymètres à photométrie spectrale
A61B 5/02 - Mesure du pouls, du rythme cardiaque, de la pression sanguine ou du débit sanguin; Détermination combinée du pouls, du rythme cardiaque, de la pression sanguine; Evaluation d'un état cardio-vasculaire non prévue ailleurs, p.ex. utilisant la combinaison de techniques prévues dans le présent groupe et des techniques d'électrocardiographie; Sondes cardiaques pour mesurer la pression sanguine
H10K 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un composant organique sensible aux rayonnements couvert par le groupe
This detection device includes an annular casing and a sheet-shaped optical sensor including a first flexible substrate provided along the shape of the annular casing, a battery provided on a first surface of the first flexible substrate, a light source provided to the first flexible substrate, a second flexible substrate, and a plurality of photodiodes provided to a detection region of the second flexible substrate. In the optical sensor, one end section of the second flexible substrate is overlapped with one end section of the first flexible substrate, and the second flexible substrate and the first flexible substrate are electrically connected.
A61B 5/02 - Mesure du pouls, du rythme cardiaque, de la pression sanguine ou du débit sanguin; Détermination combinée du pouls, du rythme cardiaque, de la pression sanguine; Evaluation d'un état cardio-vasculaire non prévue ailleurs, p.ex. utilisant la combinaison de techniques prévues dans le présent groupe et des techniques d'électrocardiographie; Sondes cardiaques pour mesurer la pression sanguine
A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p.ex. de la concentration des gaz dans le sang, de la valeur du pH du sang en utilisant des capteurs optiques, p.ex. des oxymètres à photométrie spectrale
Provided is a compact detection device which can easily accommodate, in the interior of an annular housing thereof, a light source, a battery, and an optical sensor having a plurality of photodiodes. This detection device includes: an annular housing; a first flexible substrate disposed following the shape of the annular housing; a battery provided on a first surface of the first flexible substrate; a light source provided in a first region of a second surface of the first flexible substrate, the second surface being on the side opposite to the first surface; and an optical sensor provided in a second region different from the first region of the second surface of the first flexible substrate, the optical sensor having a plurality of photodiodes.
A61B 5/02 - Mesure du pouls, du rythme cardiaque, de la pression sanguine ou du débit sanguin; Détermination combinée du pouls, du rythme cardiaque, de la pression sanguine; Evaluation d'un état cardio-vasculaire non prévue ailleurs, p.ex. utilisant la combinaison de techniques prévues dans le présent groupe et des techniques d'électrocardiographie; Sondes cardiaques pour mesurer la pression sanguine
A61B 5/1455 - Mesure des caractéristiques du sang in vivo, p.ex. de la concentration des gaz dans le sang, de la valeur du pH du sang en utilisant des capteurs optiques, p.ex. des oxymètres à photométrie spectrale
This reflective element includes a plurality of patch electrodes arrayed in a first direction and a second direction intersecting the first direction, and common wires that connect the plurality of patch electrodes in series in an array along the first direction, and each of the patch electrodes has a first length along the first direction and a second length along the second direction, and the first length is longer than the second length.
H01Q 3/34 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier la distribution de l’énergie à travers une ouverture rayonnante faisant varier la phase par des moyens électriques
H01Q 13/08 - Terminaisons rayonnantes de lignes de transmission micro-ondes à deux conducteurs, p.ex. lignes coaxiales ou lignes micro-rayées
H01Q 21/08 - Réseaux d'unités d'antennes, de même polarisation, excitées individuellement et espacées entre elles les unités étant espacées le long du trajet rectiligne ou adjacent à celui-ci
A camera module according to an embodiment of the present invention comprises an image pickup element and a liquid crystal panel. The liquid crystal panel comprises: an opening portion which is disposed at a position for causing light to enter the image pickup element therethrough and in which first and second regions are formed; a liquid crystal layer disposed at a position superimposed on the opening portion; a first electrode disposed at a position superimposed on the first region and a second electrode disposed at a position superimposed on the second region; a driver that drives the liquid crystal layer by applying a voltage to each of the first and second electrodes; a non-opening portion surrounding the opening portion; and a first pad which electrically connects the first electrode and the driver to each other and a second pad which connects the second electrode and the driver to each other, the first pad and second pad each being disposed at a position superimposed on the non-opening portion.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
G02F 1/1345 - Conducteurs connectant les électrodes aux bornes de la cellule
This semiconductor device comprises: a metal oxide layer on an insulating surface; an oxide semiconductor layer on the metal oxide layer; and an insulating layer on the oxide semiconductor layer. The insulating layer includes a first region overlapping the oxide semiconductor layer, and the first region has a first aluminum concentration of at least 1×1017atoms/cm3. The first region may be located at or within 50 nm from the surface of the insulating layer located on the opposite side from the oxide semiconductor layer.
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H10K 50/00 - Dispositifs organiques émetteurs de lumière
This semiconductor device includes a substrate, an insulating layer over the substrate, a metal oxide layer over the insulating layer, and an oxide semiconductor layer over the metal oxide layer. The insulating layer includes a first region that overlaps with the metal oxide layer and a second region that does not overlap with the metal oxide layer. The hydrogen concentration in the first region is greater than the hydrogen concentration in the second region, and the nitrogen concentration in the first region is greater than the nitrogen concentration in the second region. The nitrogen concentration in the first region increases from the substrate toward the metal oxide layer.
This semiconductor device includes: a metal oxide layer which is above an insulating surface; and an oxide semiconductor layer which is above the metal oxide layer. The fluorine concentration of the metal oxide layer is at least 1 × 1018atoms/cm3. In SIMS analysis, the secondary ion intensity of fluorine detected in the metal oxide layer may be at least ten times the secondary ion intensity of fluorine detected in the oxide semiconductor layer. The oxide semiconductor layer may abut the metal oxide layer. The metal oxide layer may include aluminum oxide. The oxide semiconductor layer may include two or more metals that include indium, with the proportion of indium in the two or more metals being 50% or greater.
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
H01L 21/336 - Transistors à effet de champ à grille isolée
H10K 50/00 - Dispositifs organiques émetteurs de lumière
H10K 59/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière couvert par le groupe
This semiconductor device that can realize a highly reliable high-mobility semiconductor device, comprises: a metal oxide layer disposed on a substrate and having aluminum as a main component; an oxide semiconductor layer disposed on the metal oxide layer; a gate electrode facing the oxide semiconductor layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode. The oxide semiconductor layer contains at least two metals that include indium, wherein the ratio of the indium in the at least two metals is at least 50%.
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/49 - Electrodes du type métal-isolant-semi-conducteur
H10K 50/00 - Dispositifs organiques émetteurs de lumière
74.
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
In this method for producing a semiconductor device, a metal oxide layer mainly composed of aluminum is formed on an insulating surface, the surface of the metal oxide layer is subjected to planarization, an oxide semiconductor layer is formed on the planarized surface, a gate insulating layer is formed on the oxide semiconductor layer, and a gate electrode is formed on the gate insulating layer so as to face the oxide semiconductor layer.
G09F 9/00 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H01L 21/306 - Traitement chimique ou électrique, p.ex. gravure électrolytique
H01L 21/3065 - Gravure par plasma; Gravure au moyen d'ions réactifs
H01L 21/336 - Transistors à effet de champ à grille isolée
H10K 50/00 - Dispositifs organiques émetteurs de lumière
H10K 59/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément organique émetteur de lumière couvert par le groupe
A semiconductor device (10) according to the present invention comprises an oxide semiconductor layer (140) that is provided on an insulation surface, a gate insulating layer (150) that is provided on the oxide semiconductor layer, and a gate electrode (160) that is provided on the oxide semiconductor layer with the gate insulating layer being interposed therebetween; the gate electrode sequentially has a titanium-containing layer (162) and a conductive layer (164) from the gate insulating layer side; the gate insulating layer comprises a first region (152) that overlaps with the gate electrode and a second region (154) that does not overlap with the gate electrode; and the thickness (T3) of the titanium-containing layer is 50% or less of the thickness (T1) in the first region.
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/49 - Electrodes du type métal-isolant-semi-conducteur
H10K 50/00 - Dispositifs organiques émetteurs de lumière
This thin-film transistor comprises: a substrate; a metal oxide layer provided on the substrate; an oxide semiconductor layer provided in contact with the metal oxide layer and having crystallinity; a gate electrode provided so as to overlap the oxide semiconductor layer; and an insulating layer provided between the oxide semiconductor layer and the gate electrode. The oxide semiconductor layer contains a plurality of crystal grains, each including at least one of crystal orientation <001>, crystal orientation <101>, and crystal orientation <111> obtained by a electron backscatter diffraction (EBSD) method.
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
A thin film transistor according to the present invention comprises a substrate, an oxide semiconductor layer which is provided on the substrate and has crystallinity, a gate electrode which is superposed on the oxide semiconductor layer, and an insulating layer which is arranged between the oxide semiconductor layer and the gate electrode. The oxide semiconductor layer contains a plurality of crystal grains, each of which has at least one of crystal orientation <001>, crystal orientation <101> and crystal orientation <111> as obtained by an electron backscattered diffraction (EBSD) method; and with respect to the occupancies of the crystal orientations as calculated on the basis of measurement points that have crystal orientations having a crystal misorientation of 0° to 15° with respect to the normal direction of the surface of the substrate, the occupancy of crystal orientation <111> is higher than the occupancy of crystal orientation <001> and the occupancy of crystal orientation <101>.
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
78.
RADIO WAVE REFLECTIVE ELEMENT USING LIQUID CRYSTAL MATERIAL
This reflective element comprises common electrodes that are arrayed in a matrix shape at intervals in one direction and in a direction intersecting the one direction, bias electrodes that are arrayed so as to overlap with the common electrodes in a plan view, a liquid crystal layer between the common electrodes and the bias electrodes, and common wires that connect adjacent common electrodes in the array of common electrodes, and the length of the common wires is half the apparent wavelength λg of a radio wave having a specific wavelength λ when the radio wave having the specific wavelength λ propagates through the liquid crystal layer.
This display device comprises: a substrate on which a drive circuit is provided; an adhesive layer that covers the substrate; a first LED chip that is provided on the adhesive layer; a pixel circuit that is provided on the adhesive layer separately from the first LED chip; a light-shielding layer that is provided on the adhesive layer and that has a first opening which is substantially the same shape as the first LED chip in a plan view of the first LED chip, and a second opening which is substantially the same shape as the pixel circuit in a plan view of the pixel circuit; an insulation layer that covers the drive circuit and the pixel circuit; and first wiring that is provided on the insulation layer and the connects the first LED chip and the pixel circuit, wherein the first wiring overlaps with the light-shielding layer.
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p.ex. à diodes
G09F 9/00 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H01L 33/58 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les éléments du boîtier des corps semi-conducteurs Éléments de mise en forme du champ optique
This detection device comprises: a substrate; photodiodes that are arranged on the substrate and are each obtained by stacking, in order, on the substrate, a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode; signal lines that are each provided between the substrate and a photodiode in a direction orthogonal to the substrate and are electrically connected to the lower electrode of the photodiode; a detection circuit that is electrically connected to the photodiodes via the signal lines; and shielding layers that are each disposed between a signal line and a lower buffer layer in the direction orthogonal to the substrate and are supplied with a reference voltage.
This oxide semiconductor film has crystalline properties and is provided on a substrate, the oxide semiconductor film including an indium (In) element, and a first metal (M1) element selected from the group consisting of an aluminum (Al) element, a gallium (Ga) element, an yttrium (Y) element, a scandium (Sc) element, and the lanthanide elements. The oxide semiconductor film includes a plurality of crystal grains, each including at least one of a crystal orientation <001>, a crystal orientation <101>, and a crystal orientation <111>, acquired by electron backscatter diffraction (EBSD). In an occupancy rate of crystal orientations calculated on the basis of a measuring point having crystal orientations in which the crystal orientation difference relative to the normal direction of the surface of the substrate is not less than 0 degrees and not more than 15 degrees, the occupancy rate of the crystal orientation <111> is greater than the occupancy rate of the crystal orientation <0001> and the occupancy rate of the crystal orientation <101>.
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 21/363 - Dépôt de matériaux semi-conducteurs sur un substrat, p.ex. croissance épitaxiale en utilisant un dépôt physique, p.ex. dépôt sous vide, pulvérisation
This detection device includes: a light source which irradiates, with light, an object to be detected; a plurality of photodiodes each including a sensor electrode and an organic semiconductor layer, and arranged in a detection region; and one or more detection circuits respectively connected to the plurality of photodiodes. The plurality of photodiodes include a first photodiode and a second photodiode having a shorter distance from the light source than the first photodiode, and the first photodiode has a larger light-receiving area than the second photodiode.
H04N 25/70 - Architectures de capteurs SSIS; Circuits associés à ces dernières
A61B 5/02 - Mesure du pouls, du rythme cardiaque, de la pression sanguine ou du débit sanguin; Détermination combinée du pouls, du rythme cardiaque, de la pression sanguine; Evaluation d'un état cardio-vasculaire non prévue ailleurs, p.ex. utilisant la combinaison de techniques prévues dans le présent groupe et des techniques d'électrocardiographie; Sondes cardiaques pour mesurer la pression sanguine
H10K 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un composant organique sensible aux rayonnements couvert par le groupe
This reflect array comprises: a plurality of patch electrodes that are mutually connected but arranged apart from each other on an incident surface for electronic waves; a plurality of control electrodes arranged apart from each other so as to correspond to the patch electrodes and disposed on the back surface side of the patch electrodes; a liquid crystal layer provided between the patch electrodes and the control electrodes; and an auxiliary electrode disposed so as to overlap a region by which the control electrodes are separated from each other.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
This radio wave reflecting panel comprises a plurality of radio wave reflecting devices, an adjusting substrate on the plurality of radio wave reflecting devices, and an antireflective film which is positioned on the adjusting substrate to absorb radio waves. Each of the plurality of radio wave reflecting devices includes a pair of substrates and a plurality of radio wave reflecting elements between the pair of substrates. The antireflective film has a lattice shape as a whole. In each of the plurality of radio wave reflecting devices, an edge portion is covered by the antireflective film, and a part enclosed by the end portion is exposed from the antireflective film. The radio waves have a frequency of 400 MHz or more and 50 GHz or less, for example.
Provided is a detection device capable of suppressing a reduction in detection accuracy due to time-varying changes in a reverse bias characteristic. This detection device comprises: a sensor unit that has a first photodiode and a second photodiode; and a detection circuit that detects the output of the first photodiode and the output of the second photodiode alternately. A first potential is supplied to anodes of the first photodiode and the second photodiode, a second potential lower than the first potential is supplied to a cathode of the second photodiode during a first period (1F_odd) when the output of the first photodiode is detected, and the second potential is supplied to a cathode of the first photodiode during a second period (1F_even) when the output of the second photodiode is detected.
A liquid crystal optical element according to one embodiment comprises: a substrate having a first main surface; a plurality of structures aligned at a prescribed pitch in each of a plurality of first areas arranged in a first direction of the first main surface and in a second direction intersecting the first direction; and a liquid crystal layer arranged across the plurality of first areas and a second area surrounding each of the plurality of first areas. The liquid crystal layer comprises: first liquid crystal molecules arranged in the first areas between the adjacent structures and aligned along the structures; and second liquid crystal molecules having the long axes aligned in the same direction in the second area. Further, the liquid crystal layer is cured in a state in which the orientation directions of the first liquid crystal molecules and the second liquid crystal molecules are fixed.
A detection device provided with: a substrate; a plurality of photodiodes, which are arranged on the substrate and in each of which a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode are laminated in said order on the substrate; a plurality of signal lines that are electrically connected respectively to the lower electrodes of the plurality of photodiodes; a detection circuit that is connected to the plurality of photodiodes via the plurality of signal lines; and a shield layer that is arranged between the plurality of signal lines in plan view.
H04N 1/028 - Balayage, transmission ou reproduction de documents ou similaires, p.ex. transmission de fac-similés; Leurs détails - Détails des têtes de balayage pour la lecture d'images
H04N 1/10 - Dispositions de balayage employant des supports d'images plans
H10K 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un composant organique sensible aux rayonnements couvert par le groupe
88.
LIQUID CRYSTAL OPTICAL ELEMENT AND METHOD FOR MANUFACTURING SAME
The purpose of one embodiment is to provide a liquid crystal optical element that can have an increased area. According to one embodiment, the liquid crystal optical element comprises a substrate, an alignment film disposed on the substrate, and a liquid crystal layer disposed on the alignment film, wherein: the alignment film has a plurality of first regions subjected to an alignment treatment, and a second region surrounding each of the plurality of first regions; the liquid crystal layer has a first alignment region that overlaps the first region and has a plurality of first liquid crystal molecules forming an alignment pattern in which the major axes of the respective liquid crystal molecule continuously change, and a second alignment region that overlaps the second region and has a plurality of second liquid crystal molecules in which the major axes of the respective liquid crystal molecule are arranged side by side in the same direction; and the liquid crystal layer is cured in a state in which alignment directions of the first liquid crystal molecules and second liquid crystal molecules are fixed.
The purpose of an embodiment of the present invention is to provide a liquid crystal optical element that is capable of having an enlarged area. The liquid crystal optical element according to an embodiment of the present invention comprises: a substrate; an alignment film disposed on the substrate; a first liquid crystal layer disposed on the alignment film; a second liquid crystal layer disposed on the alignment film and separated from the first liquid crystal layer; and an organic film that covers each of the first and second liquid crystal layers, and covers the alignment film around the first and second liquid crystal layers. Each of the first and second liquid crystal layers includes a plurality of liquid crystal molecules, and is cured in a state where the alignment orientations of the liquid crystal molecules are fixed.
The objective of the present invention is to make the inside of a room uniformly bright regardless of the time of day. This lighting device includes: a light source unit for emitting light toward a floor surface of a room; a storage unit for storing light distribution zone data relating to a zone in the room into which the light is shone, in association with time information; a time information acquiring unit for acquiring time information relating to the current time; a light distribution zone setting unit for setting a light distribution zone for the light from the light source unit; and a control unit for reading the light distribution zone data corresponding to the time information acquired by the time information acquiring unit from the storage unit, and controlling the light distribution zone setting unit on the basis of the light distribution zone data. The brightness inside the room can be made uniform, regardless of the time of day, by setting the light distribution zone data appropriately.
This lighting device comprises a light source including at least two types of light emitting elements different in color temperature, an optical element which includes a plurality of liquid crystal cells stacked sequentially and which controls the light distribution of light emitted from the light source, and a control unit which controls the light source. The control unit controls the optical element to change from a first light distribution state to a second light distribution state, which is different from the first light distribution state in light distribution state, and controls the light source to maintain the same color temperature of the light emitted in a direction perpendicular to a surface of the optical element between the first light distribution state and the second light distribution state.
H05B 47/155 - Commande coordonnée de plusieurs sources lumineuses
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p.ex. à construction modulaire
F21V 9/40 - CARACTÉRISTIQUES FONCTIONNELLES OU DÉTAILS FONCTIONNELS DES DISPOSITIFS OU SYSTÈMES D'ÉCLAIRAGE; COMBINAISONS STRUCTURALES DE DISPOSITIFS D'ÉCLAIRAGE AVEC D'AUTRES OBJETS, NON PRÉVUES AILLEURS Éléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p.ex. filtres avec des dispositions pour commander les propriétés spectrales, p.ex. la couleur, ou l’intensité
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
G02F 1/1333 - Dispositions relatives à la structure
The present invention illuminates a location, such as the four corners of a room, that is distant from the position right under a lighting device. This lighting device is provided with: a light source for emitting light onto the floor surface of a room; a light distribution area setting unit for setting the light distribution of light from the light source to a first light distribution area or a second light distribution area, which is different from the first light distribution area; and a control unit for controlling the light distribution area setting unit such that the first light distribution area and the second light distribution area are illuminated in a time-division manner, wherein the second light distribution area set by the light distribution area setting unit includes a portion closer to the corner of the floor surface than the first light distribution area.
H05B 47/155 - Commande coordonnée de plusieurs sources lumineuses
F21S 8/04 - Dispositifs d'éclairage destinés à des installations fixes destinés uniquement au montage sur un plafond ou sur une structure similaire en porte-à-faux
H05B 47/165 - Commande de la source lumineuse en suivant une séquence programmée pré-assignée; Commande logique [LC]
This lighting device is provided with: a light source that emits light; a dimmer device that has at least one liquid-crystal panel on the light-output side of the light source, and that controls the transmittance of light transmitted through the liquid crystal panel and the transmission range of the light transmitted through the liquid crystal panel, thereby adjusting the light distribution range of light emitted externally from the liquid crystal panel; a temperature sensor that acquires information indicating the temperature of the liquid crystal panel; a heating unit that heats the liquid crystal panel; and a control unit that causes the heating unit to operate if information that indicates a temperature below a prescribed temperature is acquired by the temperature sensor.
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p.ex. à construction modulaire
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
H05B 45/10 - Commande de l'intensité de la lumière
H05B 45/325 - Modulation de la largeur des impulsions [PWM]
The present invention provides a detection device which is capable of suppressing the occurrence of a short circuit between a second electrode and a first electrode that is on the outermost periphery. This detection device comprises a substrate and a plurality of photodiodes which are provided in a detection region of the substrate. The photodiodes each comprise a first electrode, a second electrode, a first carrier transport layer, an active layer and a second carrier transport layer, while comprising an organic photodiode layer that is provided so as to extend across a plurality of photodiodes. In the detection region, the first electrode, the first carrier transport layer, the active layer, the second carrier transport layer and the second electrode are sequentially stacked. On the outside of the detection region, a third electrode, to which the reference potential is applied, is arranged between the second electrode, which is provided so as to cover the lateral surface of the organic photodiode layer, and the first electrode, which is arranged on the outermost periphery.
H01L 31/10 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails dans lesquels le rayonnement commande le flux de courant à travers le dispositif, p.ex. photo-résistances caractérisés par au moins une barrière de potentiel ou une barrière de surface, p.ex. photo-transistors
H04N 25/76 - Capteurs adressés, p.ex. capteurs MOS ou CMOS
Provided is a detection device having a highly reliable ultrasonic conversion element with low cost. The detection device comprises a laminated body and a frame layer that is laminated on at least one of a first surface and second surface of the laminated body, the second surface being positioned on the opposite side of the first surface. The laminated body comprises a flexible substrate, a circuit layer including a plurality of first electrodes and laminated on the flexible substrate, and a piezoelectric layer laminated on the circuit layer. One ultrasonic conversion element comprises at least one first electrode contacting the piezoelectric layer and at least one second electrode contacting the piezoelectric layer. The frame layer has a cavity at a position overlapping with the first electrode in a plan view.
G06F 3/041 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction
G06F 3/043 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction utilisant la propagation d'ondes acoustiques
This light control device comprises: a panel unit in which a plurality of light control panels are layered in a first direction, each of the light control panels being polygonal and having a light-transmitting first substrate and a light-transmitting second substrate superposed on the first substrate; and a light source disposed on one side of the panel unit in the first direction, the first substrate or second substrate in each of the light control panels having a light control region irradiated by light from the light source, first wiring disposed on the periphery of the light control region, and second wiring, the first wiring serving as a first light-shielding region that covers between the light control region and at least one of a plurality of sides of the polygon, the second wiring serving as a second light-shielding region that covers between the light control region and a non-light-shielding region at edge sections of the other sides among the plurality of sides, and the first wiring of each of the plurality of light control panels being disposed in all the sides of the panel unit and shielding the non-light-shielding region of each of the plurality of light control panels when the panel unit is viewed from the first direction.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
F21V 9/00 - CARACTÉRISTIQUES FONCTIONNELLES OU DÉTAILS FONCTIONNELS DES DISPOSITIFS OU SYSTÈMES D'ÉCLAIRAGE; COMBINAISONS STRUCTURALES DE DISPOSITIFS D'ÉCLAIRAGE AVEC D'AUTRES OBJETS, NON PRÉVUES AILLEURS Éléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p.ex. filtres
F21V 9/40 - CARACTÉRISTIQUES FONCTIONNELLES OU DÉTAILS FONCTIONNELS DES DISPOSITIFS OU SYSTÈMES D'ÉCLAIRAGE; COMBINAISONS STRUCTURALES DE DISPOSITIFS D'ÉCLAIRAGE AVEC D'AUTRES OBJETS, NON PRÉVUES AILLEURS Éléments modifiant les caractéristiques spectrales, la polarisation ou l’intensité de la lumière émise, p.ex. filtres avec des dispositions pour commander les propriétés spectrales, p.ex. la couleur, ou l’intensité
G02F 1/1345 - Conducteurs connectant les électrodes aux bornes de la cellule
G02F 1/1347 - Disposition de couches ou de cellules à cristaux liquides dans lesquelles un faisceau lumineux est modifié par l'addition des effets de plusieurs couches ou cellules
F21Y 107/70 - Sources lumineuses comprenant des éléments générateurs de lumière disposés en trois dimensions sur des supports ou des substrats souples ou déformables, p.ex. pour transformer la source lumineuse dans une forme désirée
The present invention addresses the problem of using a plurality of display devices to seamlessly form a large screen. To solve said problem, the present invention has the following configuration. That is, the display devices are characterized in that: a first display device 1000 has a first display area 10 and a first frame edge area 20 disposed outside the first display area 10; a second display device 2000 has a second display area 10 and a second frame edge area 20 disposed outside the second display area 10; the first display device 1000 and the second display device 2000 are disposed in parallel in a state of partially overlapping each other; the first frame edge area 20 of the first display device 1000 overlaps the second display area 10 of the second display device 2000; the second frame edge area 20 of the second display device 2000 overlaps the first display area 10 of the first display device 1000; and when viewed in a plan view, the first display area 10 and the second display area 10 are continuous to each other.
G02F 1/1333 - Dispositions relatives à la structure
G02F 1/1334 - Dispositions relatives à la structure basées sur des cristaux liquides dispersés dans un polymère, p.ex. cristaux liquides micro-encapsulés
The present invention provides a lighting device that can realize energy saving without a troublesome operation, and without wasteful energy consumption. The lighting device comprises: a light source; a position data acquisition unit that acquires position data indicating the respective positions of a plurality of people; a position data processing unit that calculates ellipse data corresponding to the positions of the plurality of people on the basis of the position data; a light quantity setting unit that sets the light quantity of a light source on the basis of the ellipse data calculated by the position data processing unit; an irradiation shape setting unit that sets the irradiation shape of light from the light source on the basis of the ellipse data calculated by the position data processing unit; and an irradiation angle setting unit that sets the irradiation angle of the light from the light source on the basis of the ellipse data calculated by the position data processing unit.
H05B 47/105 - Commande de la source lumineuse en réponse à des paramètres détectés
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
This lighting device comprises: a light source that emits light; a light control device that has at least one liquid crystal panel on the light emitting side of the light source and adjusts the light distribution range of light emitted from the liquid crystal panel to the outside by controlling the transmittance of light passing through the liquid crystal panel and the transmittance range of light passing through the liquid crystal panel; and a heating unit that heats the liquid crystal panel.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p.ex. cellules d'affichage individuelles à cristaux liquides
F21S 2/00 - Systèmes de dispositifs d'éclairage non prévus dans les groupes principaux ou , p.ex. à construction modulaire
According to the present invention, a wiring line 31 and a wiring line 32 of a display device DSP2 each comprise: a metal wiring part 30A which is formed of a first metal material that is copper or a copper alloy; and a metal wiring part 30B which is electrically connected to the metal wiring part 30A and is formed of a second metal material that is different from the first metal material. The metal wiring part 30B is arranged but the metal wiring part 30A is not arranged in a region R1 that overlaps with a semiconductor layer 50. The metal wiring part 30A and the metal wiring part 30B are arranged in a region R2 which is arranged so as to surround the region R1 without overlapping with the semiconductor layer 50. The metal wiring part 30B arranged in the region R1 is covered with an organic insulating film 40.
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p.ex. à diodes
H01L 21/3205 - Dépôt de couches non isolantes, p.ex. conductrices ou résistives, sur des couches isolantes; Post-traitement de ces couches
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
H01L 29/41 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative
H01L 29/43 - Electrodes caractérisées par les matériaux dont elles sont constituées
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
brevets
