According to an embodiment, a transistor driver circuit includes a driving force limitation circuit and a delay-time adjustment circuit. The driving force limitation circuit operates to maintain a gate potential of a transistor to be driven at a driving force limitation potential when the transistor to be driven is driven. The driving force limitation potential corresponds to a threshold voltage of the transistor to be driven. The delay-time adjustment circuit operates to cause the gate potential to transition to the driving force limitation potential when the driving force limitation circuit is in operation.
According to one embodiment, an operating system acquires an image signal from a first device that is an operation object. The operating system causes a display device to display a screen based on the image signal. The operating system generates an operation command corresponding to an input operation from a user in response to the input operation. The operating system generates an operation signal compatible with the first device based on the operation command, and transmits the operation signal to the first device.
G06F 3/0484 - Techniques d’interaction fondées sur les interfaces utilisateur graphiques [GUI] pour la commande de fonctions ou d’opérations spécifiques, p.ex. sélection ou transformation d’un objet, d’une image ou d’un élément de texte affiché, détermination d’une valeur de paramètre ou sélection d’une plage de valeurs
G09G 5/391 - Circuits pour modifier la résolution, p.ex. des formats variables de l'écran
3.
IMAGE PROCESSING SYSTEM AND MEDICAL INFORMATION PROCESSING SYSTEM
In one embodiment, an image processing system includes a memory and processing circuitry. The memory is configured to store a predetermined program. The processing circuitry is configured, by executing the predetermined program, to perform processing on an input image by exploiting a neural network having an input layer, an output layer, and an intermediate layer provided between the input layer and the output layer, the input image being inputted to the input layer, and adjust an internal parameter based on data related to the input image, while performing the processing on the input image after training of the neural network, the internal parameter being at least one internal parameter of at least one node included in the intermediate layer, and the input parameter having been calculated by the training of the neural network.
According to one embodiment, a disk device includes a magnetic disk, a magnetic head, a flexure, a piezoelectric element, a first bonding material, a second bonding material, and a protrusion. The flexure includes a first outer surface, a first pad, and a second pad. The first pad and the second pad are on the first outer surface. The piezoelectric element includes a second outer surface, a first electrode, and a second outer surface. The first electrode and the second electrode are on the second outer surface. The first bonding material, which is conductive, bonds the first pad and the first electrode. The second bonding material, which is conductive, bonds the second pad and the second electrode. The protrusion is provided on the flexure, is located at least partially between the first bonding material and the second bonding material, and protrudes from the first outer surface.
G11B 5/48 - Disposition ou montage des têtes par rapport aux supports d'enregistrement
H10N 30/87 - Dispositifs piézo-électriques ou électrostrictifs - Détails de structure Électrodes ou interconnexions, p.ex. connexions électriques ou bornes
5.
CLEANING LIQUID AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
In general, according to one embodiment, a cleaning liquid includes a glycol ether-based cleaning agent and a compound represented by chemical formula (1) below, where R is an NH2 group or H, and n is 1 or more.
In general, according to one embodiment, a cleaning liquid includes a glycol ether-based cleaning agent and a compound represented by chemical formula (1) below, where R is an NH2 group or H, and n is 1 or more.
C11D 11/00 - Méthodes particulières pour la préparation de compositions contenant des mélanges de détergents
C11D 17/00 - Détergents ou savons caractérisés par leur forme ou leurs propriétés physiques
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/29 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par le matériau
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Monden, Yukitaka
Yamazaki, Shuji
Kobayashi, Takenori
Abrégé
An energy storage system according to an embodiment includes first and second power storage devices and performs charge/discharge control for the power storage devices based on a charge/discharge command value. The first power storage device performs discharging for one or more devices as destination via a power line or performs charging of power supplied from one or more devices as source via the power line, and the second power storage device performs charging and discharging for the first power storage device. The energy storage system also includes a control system that controls charge/discharge power of the second power storage device so that a power storage rate of the first power storage device falls within a predetermined power storage rate range and controls charge/discharge power of the first power storage device based on charge/discharge power corresponding to the charge/discharge command value and the charge/discharge power of the second power storage device.
An electrochemical reaction device in an embodiment includes: an electrochemical reaction cell including a first accommodation part for accommodating carbon dioxide, a second accommodation part for accommodating an electrolytic solution containing water, or water vapor, a diaphragm provided between the first accommodation part and the second accommodation part, a reduction electrode arranged in the first accommodation part, and an oxidation electrode arranged in the second accommodation part, a detection unit detecting a reaction amount in the electrochemical reaction cell; a regulation unit regulating an amount of the carbon dioxide to be supplied to the first accommodation part, and a control unit controlling the regulation unit based on a detection signal of the detection unit.
Toshiba Infrastructure Systems & Solutions Corporation (Japon)
Inventeur(s)
Sato, Masataka
Aoki, Takashi
Abrégé
According to an embodiment, an article conveyance sorting apparatus includes a distributing section, a first conveyance section, a second conveyance section, and a conveyance sorting section. The distributing section distributes an article in a first direction or a second direction based on a first distribution control signal or a second distribution control signal corresponding to a distinguishing result of the article distinguished based on article information. The first conveyance section receives the article distributed in the first direction. The second conveyance section receives the article distributed in the second direction. The conveyance sorting section sorts each of articles conveyed by the plurality of trays to a designated sorting destination.
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Sakauchi, Yoko
Akiyama, Yukina
Kudo, Yuki
Kawachi, Shunsuke
Toba, Koji
Abrégé
A startup method and startup program for microgrid that enable to stably start up the microgrid without producing frequency fluctuation is provided. An embodiment of the present disclosure is a startup method for microgrid configured by a plurality of inverter power supplies independently sharing a load and divided into a master that starts up first and a slave that starts up secondly and later, the startup method comprising: a master initial startup step of initially starting up the master in a CVCF mode; a slave initial startup step of initially starting up the slave in a grid interconnection mode; and a control mode changing step of the master and the slave changing control modes thereof when output fluctuation of the master and the slave becomes a predetermined threshold or less or when the master and the slave or other inverter power supplies become a predetermined operation state while output voltage of said master and said slave becomes a predetermined threshold or less.
H02J 3/24 - Dispositions pour empêcher ou réduire les oscillations de puissance dans les réseaux
H02J 3/32 - Dispositions pour l'équilibrage de charge dans un réseau par emmagasinage d'énergie utilisant des batteries avec moyens de conversion
H02J 3/46 - Dispositions pour l’alimentation en parallèle d’un seul réseau, par plusieurs générateurs, convertisseurs ou transformateurs contrôlant la répartition de puissance entre les générateurs, convertisseurs ou transformateurs
H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande
According to one embodiment, a semiconductor structure includes a substrate including silicon crystal, a first layer including AlN crystal, and an intermediate region provided between the silicon crystal and the AlN crystal. The intermediate region includes Al and nitrogen. A direction from the silicon crystal to the AlN crystal is along a first direction. A third lattice plane spacing in the first direction of a lattice of Al atoms in the intermediate region is longer than a first lattice plane spacing in the first direction of the silicon crystal and longer than a second lattice plane spacing in the first direction of the AlN crystal.
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
H01L 29/15 - Structures avec une variation de potentiel périodique ou quasi périodique, p.ex. puits quantiques multiples, superréseaux
11.
MOLECULAR SENSOR, MOLECULAR DETECTION DEVICE, AND MOLECULAR DETECTION METHOD
A molecular sensor of an embodiment includes a sensitive film including a plurality of metal organic framework particles, and a detector configured to be capable of measuring a change in physical quantity due to adsorption of a target molecule to the sensitive film. Pores are present between the plurality of metal organic framework particles, and the pores are any of mesopores of 2 nm or more and 50 nm or less, micropores smaller than the mesopores, and macropores larger than the mesopores. A sum of areas of the micropores is defined as Smi, a sum of areas of the mesopores is defined as Sme, a sum of areas of the macropores is defined as Sma, and an area of an entire image analysis area is defined as Stotal, in an image analysis area by two-dimensional image analysis on a cross section of the sensitive film in a thickness direction. Pore distribution satisfies 0.35≤Sme/(Smi+Sme+Sma), 0.01≤Smi+Sme+Sma)/Stotal≤0.5.
An electrolytic device includes: an electrolysis cell including: an anode; a cathode; a first flow path plate facing on the anode, the first flow path plate having a first recess defining an anode flow path through which a first liquid flows; a second flow path plate facing on the cathode, the second flow path plate having a second recess defining a cathode flow path through which a first gas flows; and a separator provided between the anode and the cathode. The second flow path plate has an uneven surface on an inner surface of the second recess. An arithmetic mean roughness of the uneven surface is 0.03 μm or more and 50 μm or less.
C25B 9/23 - Cellules comprenant des électrodes fixes de dimensions stables; Assemblages de leurs éléments de structure avec des diaphragmes comprenant des membranes échangeuses d'ions dans ou sur lesquelles est incrusté du matériau pour électrode
13.
ELECTRODE FOR ELECTROCHEMICAL REACTION DEVICE, MEMBRANE ELECTRODE ASSEMBLY, AND ELECTROCHEMICAL REACTION DEVICE
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Ono, Akihiko
Yoshinaga, Norihiro
Sugano, Yoshitsune
Abrégé
An electrode for an electrochemical reaction device, includes: a substrate; and a stack provided on the substrate. The stack includes catalyst layers and gap layers, and each catalyst layer and each gap layer are alternately stacked. One of the gap layers has a first region and a second region, the first region having a first thickness, the second region having a first gap, and the first gap having a second thickness, and the second thickness is 3 times or more and 10 times or less the first thickness.
C25B 11/032 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par la configuration ou la forme perforées ou foraminées Électrodes poreuses Électrodes à diffusion de gaz
C25B 1/04 - Hydrogène ou oxygène par électrolyse de l'eau
C25B 9/19 - Cellules comprenant des électrodes fixes de dimensions stables; Assemblages de leurs éléments de structure avec des diaphragmes
C25B 11/054 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par le matériau Électrodes comportant des électro-catalyseurs sur un substrat ou un support Électrodes comportant des électro-catalyseurs sur un support
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Fukazawa, Taishi
Nakano, Yoshihiko
Yoshinaga, Norihiro
Abrégé
A membrane electrode assembly of an embodiment includes: a first electrode including a first diffusion layer, and a first catalyst layer; a second electrode for generating hydrogen, the second electrode including a second diffusion layer, a second catalyst layer including a porous catalyst layer including a porous precious metal or sheet-like precious metal, and a hydrophobic moisture management layer provided between the second catalyst layer and the second diffusion layer, the hydrophobic moisture management layer including carbon particles and carbon fibers, a weight of the carbon fibers being between 1 wt % and 20 wt % of a weight of the second diffusion layer; and an electrolyte membrane provided between the first electrode and the second electrode, the first catalyst layer being provided between the first diffusion layer and the electrolyte membrane, and the second catalyst layer being provided between the second diffusion layer and the electrolyte membrane.
C25B 11/032 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par la configuration ou la forme perforées ou foraminées Électrodes poreuses Électrodes à diffusion de gaz
C25B 11/052 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par le matériau Électrodes comportant des électro-catalyseurs sur un substrat ou un support Électrodes comportant un substrat et un ou plusieurs revêtements électro-catalytiques
15.
ELECTRODE, MEMBRANE ELECTRODE ASSEMBLY, ELECTROCHEMICAL CELL, STACK, AND ELECTROLYZER
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Yoshinaga, Norihiro
Jung, Hyangmi
Fukazawa, Taishi
Nakano, Yoshihiko
Hirazawa, Hiroaki
Sugano, Yoshitsune
Kudo, Yuki
Ono, Akihiko
Abrégé
An electrode according to an embodiment includes a support, and a catalyst layer including a sheet layer and a gap layer stacked, alternately on the support. The catalyst layer includes noble oxide and non-noble oxide. 4 [wt %] or more and 8 [wt %] or less of metal elements included in the catalyst layer is non-noble metal. An average thickness of the gap layer is 6 [nm] or more and 50 [nm] or less.
H01M 4/86 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes inertes ayant une activité catalytique, p.ex. pour piles à combustible
H01M 8/1004 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Éléments à combustible; Leur fabrication Éléments à combustible avec électrolytes solides caractérisés par les ensembles membrane-électrodes [MEA]
16.
POWER CONVERSION DEVICE AND CONTROL METHOD FOR POWER CONVERSION DEVICE
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Fujita, Tsunehito
Baba, Toshiyuki
Nozaki, Yuichiro
Suzuki, Hiroomi
Abrégé
A power conversion device according to an embodiment includes: a voltage regulator circuit configured to regulate power from a power source to a desired voltage; an inverter configured to convert the power output from the voltage regulator circuit into an alternate current power; a resonant circuit having inductance and capacitance; a high frequency transformer configured to convert the alternate current power of the inverter; a rectifier configured to convert the alternate current power output from the high frequency transformer into a direct current power; a temperature detector configured to detect a temperature of the resonant circuit; and a controller configured to detect an anomalous resonant frequency when the temperature is equal to or higher than a predetermined temperature threshold to control an anomalous state.
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
H02M 1/36 - Moyens pour mettre en marche ou arrêter les convertisseurs
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02M 7/48 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Miki, Hiromutsu
Shimizu, Keiko
Shiraishi, Hiroki
Iwata, Yoshihiro
Oota, Yukitoshi
Abrégé
A power generation facility in an embodiment includes: a boiler; a high-pressure turbine to which steam generated in the boiler is introduced; a low-pressure turbine provided downstream of the high-pressure turbine; and a condenser that condenses steam discharged from the low-pressure turbine. The power generation facility further includes: a feed pipe that leads feedwater in the condenser to the boiler; a heat storage and steam generation device that has a heat storage function that uses surplus energy generated in an own system to store heat, and a steam generation function that has part of feedwater led by the feed pipe introduced thereinto and turns the feedwater into steam by the stored heat; and a steam supply pipe that supplies steam generated in the heat storage and steam generation device to an own system.
F01K 3/16 - Disposition commune de l'accumulateur et du réchauffeur
F01K 3/06 - Emploi d'accumulateurs et de machines motrices d'un type particulier; Leur commande la machine motrice étant du type à soutirage ou sans condensation
F01K 7/40 - Emploi de plusieurs réchauffeurs d’eau d’alimentation en série
F22D 1/32 - Appareils de chauffage d'eau d'alimentation, p.ex. préchauffeurs disposés pour un chauffage par la vapeur, p.ex. prélevée dans la turbine
18.
MEMBRANE ELECTRODE ASSEMBLY, ELECTROCHEMICAL CELL, STACK, ELECTROLYZER, AND MANUFACTURING METHOD OF MEMBRANE ELECTRODE ASSEMBLY
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Nakano, Yoshihiko
Yoshinaga, Norihiro
Abrégé
A membrane electrode assembly according to an embodiment includes a first diffusion layer; a second diffusion layer; an electrolyte membrane provided between the first diffusion layer and the second diffusion layer; a first catalyst layer provided between the first diffusion layer and the electrolyte membrane; and a second catalyst layer provided between the second diffusion layer and the electrolyte membrane, wherein the first diffusion layer includes a first surface facing the first catalyst layer, and the first surface includes a chamfered portion, and a second surface provided on an opposing side of the first surface, and the second surface includes a protrusion protruding from the side of the first surface toward the side of the second surface.
C25B 11/032 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par la configuration ou la forme perforées ou foraminées Électrodes poreuses Électrodes à diffusion de gaz
C25B 11/056 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par le matériau Électrodes comportant des électro-catalyseurs sur un substrat ou un support caractérisées par le matériau du substrat ou du support constitué d'une matière textile ou non tissée
C25B 11/063 - Métal valve, c. à d. dont l’oxyde est semi-conducteur, p.ex. titane
An electrolytic device includes: a humidifier to humidify a cathode gas; a cathode discharge flow path through which a cathode fluid flows; an anode collector to separate an anode fluid into an anode discharge liquid and an anode exhaust gas; a first cooler to cool the anode exhaust gas to condense water vapor in the anode exhaust gas to produce a anode condensed water; a first flow path connecting the anode collector and an anode supply flow path, the first flow path through which the anode solution flows from the anode collector to the anode supply flow path; a second flow path through which the anode condensed water flows from the condensed water collector to the humidifier; and a first heat exchange structure to exchange heat between the anode solution through the first flow path and the anode condensed water through the second flow path.
According to one embodiment, a semiconductor device includes: a first nitride semiconductor layer provided on a substrate; a second nitride semiconductor layer provided on the first nitride semiconductor layer and having a band gap wider than that of the first nitride semiconductor layer; a source electrode and a drain electrode, being provided on the second nitride semiconductor layer separately from each other; a gate electrode provided on the second nitride semiconductor layer and arranged between the source electrode and the drain electrode; a first field plate electrode provided on the second nitride semiconductor layer, arranged between the gate electrode and the drain electrode, and electrically coupled to the source electrode; and a second field plate electrode provided on the first field plate electrode and formed to project toward the gate electrode.
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
21.
MAGNETIC DISK DRIVE AND METHOD OF SETTING A NOTCH FILTER OF THE DRIVE
According to one embodiment, a magnetic disk drive includes a notch filter, a parameter storage unit and a computation unit, when the sampling period changes from a first sampling period to a second sampling period, the computation unit computes a damping ratio parameter related to the damping ratio in a second set of parameters at the second sampling period, based on a first absolute value at a first angular frequency of a first transfer function computed from a first set of parameters at the first sampling period and a second absolute value at the first angular frequency of a second transfer function computed from the first set of parameters at the second sampling period, and the notch filter is set with the second set of parameters at the second sampling period is computed.
G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p.ex. pour compenser les irrégularités de surface ou pour suivre les pistes pour suivre les pistes d'un disque
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Yuminamochi, Mitsunori
Matsuzaki, Akihiro
Saito, Masaoki
Katayama, Hitoshi
Sato, Fumio
Nozaki, Dai
Abrégé
An inspection apparatus of an embodiment includes a rotor image-pickup unit for picking up an image of a rotor using a rotor image-pickup device in the air gap between the rotor and a stator. The rotor image-pickup device includes: a carriage casing; a camera; an image-pickup position changing part; and an image-pickup direction changing part. The camera is installed in the carriage casing, and picks up an image of a ventilation hole of the rotor in the air gap. The image-pickup position changing part is installed in the carriage casing, and changes an image-pickup position of the camera by moving the carriage casing in a circumferential direction of the rotor in the air gap. The image-pickup direction changing part is installed in the carriage casing, and changes an image-pickup direction of the camera to an inclined angle to a radial direction of the rotor in the air gap.
H04N 23/50 - Caméras ou modules de caméras comprenant des capteurs d'images électroniques; Leur commande - Détails de structure
H04N 23/66 - Commande à distance de caméras ou de parties de caméra, p. ex. par des dispositifs de commande à distance
H04N 23/695 - Commande de la direction de la caméra pour modifier le champ de vision, p. ex. par un panoramique, une inclinaison ou en fonction du suivi des objets
According to the present embodiment, a semiconductor switch includes a switching transistor, a transmission element, a receiving element, and a power supply circuit. The switching transistor is connected between a pair of output terminals. An input signal is input to the transmission element. The receiving element is configured to generate a first current based on input of an input signal to the transmission element, wherein the receiving element is isolated from the transmission element. The power supply circuit is configured to supply a power supply current to a control electrode of the switching transistor in response to generation of the first current.
H03K 17/082 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension par réaction du circuit de sortie vers le circuit de commande
24.
ELECTRODE FOR ELECTROCHEMICAL REACTION DEVICE, MEMBRANE ELECTRODE ASSEMBLY, AND ELECTROCHEMICAL REACTION DEVICE
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Sugano, Yoshitsune
Ono, Akihiko
Yoshinaga, Norihiro
Abrégé
An electrode for electrochemical reaction device of an embodiment includes: a substrate; and a catalyst lamination provided on the substrate, and having a plurality of catalyst layers, and void layers respectively arranged between the plurality of catalyst layers adjacent to each other. The plurality of catalyst layers include a first catalyst layer arranged at a position close to the substrate and having a first thickness, and a second catalyst layer arranged at a position separated from the substrate and having a second thickness that is smaller than the first thickness.
C25B 11/053 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par le matériau Électrodes comportant des électro-catalyseurs sur un substrat ou un support Électrodes comportant un substrat et un ou plusieurs revêtements électro-catalytiques caractérisées par des revêtements électro-catalytiques multicouches
25.
ELECTROSPINNING APPARATUS AND ELECTROSPINNING METHOD
In an embodiment, an electrospinning apparatus includes a transfer unit, a spinning head and an air ejection unit. In the transfer unit, a transfer target is transferred along a transfer direction, and a spinning head is capable of ejecting a material liquid toward the transfer unit from a first direction, which intersects the transfer direction. The air ejection unit forms an air flow that flows across the transfer unit toward an area located on an opposite side across the transfer unit in a second direction, which intersects both the transfer direction and the first direction, by ejecting air against the transfer unit from one side of the second direction.
According to one embodiment, a rotary electric machine includes a rotor and a stator. The rotor includes a rotary shaft, a first core, a permanent magnet, and an intermediate member. The rotary shaft extends in a first direction. The first core is provided around the rotary shaft in a first plane perpendicular to the first direction. The permanent magnet is provided around the first core in the first plane. The intermediate member is provided between the rotary shaft and the first core. The intermediate member includes a first portion containing a carbon fiber, and a second portion aligned with the first portion in the first direction and containing a metal. The stator is provided around the rotor in the first plane.
According to one embodiment, a sensor device is a sensor device that detects an acetyl compound in a sample and includes a storage unit that stores a sample, a sensor section that comes into contact with the sample in the storage unit and detects a change in ion density, and an amino compound fixed to the sensor section.
According to one embodiment, a chemical sensor including a nucleic acid probe for capturing a target substance, a sensor element that has a surface on which the nucleic acid probe is immobilized, and a liquid film that covers the sensor element is provided.
According to one embodiment, a magnetic disk device comprises a feedforward control unit, which includes a plant model processing unit including a plurality of submodel processing units. Each of the submodel processing units generates a submodel output value that is an output value for an input value to be input, and the feedforward control unit generates the output value based on a plurality of the submodel output values.
An ammonia manufacturing apparatus of an embodiment includes: an electrochemical reaction cell including: a first reaction tank in which a reduction electrode is arranged and gaseous nitrogen is supplied; a second reaction tank in which an oxidation electrode is arranged and an electrolytic solution containing water or water vapor is supplied; and a diaphragm provided between the first reaction tank and the second reaction tank. In the ammonia manufacturing apparatus of the embodiment, the reduction electrode includes a reduction catalyst that reduces nitrogen to produce ammonia, a porous carbon material that supports the reduction catalyst, and an organic polymer material that binds the porous carbon material. The porous carbon material has pores with a BET average pore size of 1 nm or more and 15 nm or less.
B01J 31/18 - Catalyseurs contenant des hydrures, des complexes de coordination ou des composés organiques contenant des complexes de coordination contenant de l'azote, du phosphore, de l'arsenic ou de l'antimoine
C25B 9/19 - Cellules comprenant des électrodes fixes de dimensions stables; Assemblages de leurs éléments de structure avec des diaphragmes
C25B 9/70 - Assemblages comprenant plusieurs cellules
C25B 11/031 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par la configuration ou la forme perforées ou foraminées Électrodes poreuses
31.
WATER ELECTROLYSIS DEVICE AND METHOD OF CONTROLLING WATER ELECTROLYSIS DEVICE
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Ono, Akihiko
Yoshinaga, Norihiro
Sugano, Yoshitsune
Abrégé
A water electrolysis device includes: an anode; a cathode; an electrolyte membrane between the anode and the cathode; a first circulation flow path connecting a anode supply flow path and a anode discharge flow path; a second circulation flow path connected in parallel with the first circulation flow path; an ion filter in a middle of the second circulation flow path and to remove metal ions in the anode solution; a metal supply source to supply metal ions into the anode solution; a first valve in a middle of the first circulation flow path; a second valve in a middle of the second circulation flow path; a third valve in a middle of the metal supply flow path; a sensor to measure concentration of metal ions in the anode solution; and a controller to control opening and closing of each valve, according to the measured concentration of the metal ions.
C25B 1/04 - Hydrogène ou oxygène par électrolyse de l'eau
C25B 9/21 - Cellules comprenant des électrodes fixes de dimensions stables; Assemblages de leurs éléments de structure avec des diaphragmes avec plusieurs diaphragmes
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Yoshinaga, Norihiro
Nakano, Yoshihiko
Fukazawa, Taishi
Kanai, Yuta
Sugano, Yoshitsune
Ono, Akihiko
Abrégé
An electrode according to an embodiment includes a support, an intermediate layer including carbon particles and resin on the support, and a catalyst layer on the intermediate layer. A thickness of the intermediate layer is 70 [μm] or more and 300 [μm] or less.
C25B 11/069 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par le matériau Électrodes comportant des électro-catalyseurs sur un substrat ou un support caractérisées par le matériau du substrat ou du support formé de plusieurs composés
C25B 9/19 - Cellules comprenant des électrodes fixes de dimensions stables; Assemblages de leurs éléments de structure avec des diaphragmes
C25B 11/032 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par la configuration ou la forme perforées ou foraminées Électrodes poreuses Électrodes à diffusion de gaz
C25B 11/052 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par le matériau Électrodes comportant des électro-catalyseurs sur un substrat ou un support Électrodes comportant un substrat et un ou plusieurs revêtements électro-catalytiques
33.
ELECTRODE, MEMBRANE ELECTRODE ASSEMBLY, ELECTROCHEMICAL CELL, STACK, AND ELECTROLYZER
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Jung, Hyangmi
Fukazawa, Taishi
Yoshinaga, Norihiro
Ono, Akihiko
Sugano, Yoshitsune
Yamagiwa, Masakazu
Kudo, Yuki
Abrégé
An electrode according to an embodiment includes a support and a catalyst layer including a sheet layer and a gap layer stacked alternately. Cracks or/and holes exist in the catalyst layer.
C25B 11/056 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par le matériau Électrodes comportant des électro-catalyseurs sur un substrat ou un support caractérisées par le matériau du substrat ou du support constitué d'une matière textile ou non tissée
C25B 9/19 - Cellules comprenant des électrodes fixes de dimensions stables; Assemblages de leurs éléments de structure avec des diaphragmes
C25B 11/063 - Métal valve, c. à d. dont l’oxyde est semi-conducteur, p.ex. titane
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Yamagiwa, Masakazu
Yoshinaga, Norihiro
Sugano, Yoshitsune
Abrégé
A support according to an embodiment includes fibers. A first arithmetic mean roughness of the fibers observed from in-plane direction of the support is 7 [μm] or more and 40 [μm] or less. A first sampling length of the first arithmetic mean roughness is one fifth of an average diameter of the fibers observed from the in-plane direction of the support.
C25B 11/063 - Métal valve, c. à d. dont l’oxyde est semi-conducteur, p.ex. titane
C25B 11/031 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par la configuration ou la forme perforées ou foraminées Électrodes poreuses
C25B 11/052 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Électrodes; Leur fabrication non prévue ailleurs caractérisées par le matériau Électrodes comportant des électro-catalyseurs sur un substrat ou un support Électrodes comportant un substrat et un ou plusieurs revêtements électro-catalytiques
35.
SURFACE EMITTING QUANTUM CASCADE LASER AND CONTROL METHOD THEREOF
According to one embodiment, a surface emitting quantum cascade laser includes: a first surface that emits laser light; a second surface opposite to the first surface; an active layer provided between the first surface and the second surface; a photonic crystal provided between the active layer and the first surface or between the active layer and the second surface, the photonic crystal having a predetermined periodicity; a first electrode located on the first surface outside a region where the laser light is emitted; a second electrode provided on the second surface, the photonic crystal being located between the first surface and the second electrode; and a third electrode provided on the second surface and separated from the second electrode, the active layer extending between the first surface and the second electrode and between the first surface and the third electrode.
H01S 5/18 - Lasers à émission de surface [lasers SE], p.ex. comportant à la fois des cavités horizontales et verticales
H01S 5/065 - Accrochage de modes; Suppression de modes; Sélection de modes
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
36.
TEMPORARY SUBSTRATE ADHESIVE AND SUBSTRATE PROCESSING METHOD
According to one embodiment, a semiconductor device includes: a first frame, a second frame spaced apart from the first frame in a first direction, and a first joint terminal provided above a second chip provided on the second frame. The first frame includes a first terminal portion extending toward the second frame. The first joint terminal includes a second terminal portion extending toward the first frame. The second terminal portion includes a plane portion, a first projecting portion and a second projecting portion each branching out from the plane portion. An end portion of the first projecting portion and an end portion of the second projecting portion are respectively joined on the first terminal portion. The first projecting portion is different in a length in a first direction from the second projecting portion.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
According to one embodiment, an inrush current suppression circuit includes a normally-on transistor, a normally-off transistor connected in series with the normally-on transistor, a first drive circuit that drives the normally-on transistor, a second drive circuit that drives the normally-off transistor, a diode connected between an output of the first drive circuit and an output terminal of the normally-off transistor, a first power source smoothing circuit that performs smoothing of a source current to be supplied to the first drive circuit and the second drive circuit, and a switch circuit that switches connection/disconnection of a current path passing through the first power source smoothing circuit.
H03K 17/0812 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
H03K 17/74 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de diodes
39.
SENSE AMPLIFIER CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE
According to one embodiment, a complementary and latching sense amplifier circuit includes a sense amplifier main unit that receives an input signal input from each of a pair of input terminals to a corresponding gate terminal. The sense amplifier circuit includes: separation gates configured to electrically disconnect the input terminals and the corresponding respective gate terminals from each other before the sense amplifier main unit is effectively put into an enabled state; and capacitive elements having a same capacitance, each of the capacitive elements being connected between the corresponding gate terminal and a power supply.
G11C 11/4091 - Amplificateurs de lecture ou de lecture/rafraîchissement, ou circuits de lecture associés, p.ex. pour la précharge, la compensation ou l'isolation des lignes de bits couplées
G11C 11/4094 - Circuits de commande ou de gestion de lignes de bits
G11C 11/4099 - Traitement de cellules factices; Générateurs de tension de référence
According to one embodiment, a magnetic disk device includes a magnetic disk, a motor, a magnetic head, and a controller. A first area, and a second area located on an inner diameter side of the first area are provided in the magnetic disk. The motor rotates the magnetic disk. The controller receives a write command. In a case where a first position that is a position designated as a write destination of data by the write command is included in the first area, the controller writes the data to the first position by the magnetic head while rotating the magnetic disk at a rotational speed of a first value. In a case where the first position is included in the second area, the controller writes the data to the first position by the magnetic head while rotating the magnetic disk at a rotational speed of a second value larger than the first value.
According to one embodiment, provided is an active material including a niobium titanium-containing oxide phase and a carbon coating layer. The niobium titanium-containing oxide phase contains a niobium titanium-containing oxide having a monoclinic structure and Na, and a Na content therein is 0 ppm or more and 100 ppm or less. The carbon coating layer coats at least a part of the niobium titanium-containing oxide phase, and contains 0.001% or more of carboxyl group.
H01M 4/131 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base d'oxydes ou d'hydroxydes mixtes, ou de mélanges d'oxydes ou d'hydroxydes, p.ex. LiCoOx
H01M 4/133 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de matériau carboné, p.ex. composés d'intercalation du graphite ou CFx
H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p.ex. LiTi2O4 ou LiTi2OxFy
H01M 4/587 - Matériau carboné, p.ex. composés au graphite d'intercalation ou CFx pour insérer ou intercaler des métaux légers
H01M 50/574 - Dispositifs ou dispositions pour l’interruption du courant
42.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device of an embodiment includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a first electrode film provided on the first insulating film, a second electrode film provided on the first electrode film, and a first field plate electrode provided on the second electrode film. A lower end of the first field plate electrode is located on a second surface of the first electrode film, the second surface being in contact with the second electrode film, rather than a first surface of the first electrode film, the first surface being in contact with the first insulating film.
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
A semiconductor device includes an insulating layer, a semiconductor layer and a control electrode. The semiconductor layer is provided on the insulating layer and includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type and a third semiconductor region of a second conductivity type. The third semiconductor region is located between the first semiconductor region and the second semiconductor region. The first to third semiconductor regions are arranged in a first direction along an interface between the insulating layer and the semiconductor layer. The control electrode is provided on the semiconductor layer and includes first to third control parts arranged in the first direction. The first control part is located between the second control part and the third control part. The third semiconductor region is positioned between the insulating layer and the first control part.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
An isolator includes a substrate; a first insulating film on the substrate; a second insulating film on the first insulating film, a third insulating film on the second insulating film, a first interconnect in the second insulating film, and first and second coils. The first interconnect has a thickness equal to a film thickness of the second insulating film. The first coil extends in the first and second insulating films. The first coil has a length in the extending direction greater than the thickness of the first interconnect. The third insulating film is provided on the second insulating film, and covers the first interconnect and the first coil. The second coil is provided on the third insulating film, and faces the first coil via the third insulating film.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
According to one embodiment, in a disk device, a controller adjusts a correction value of a radial position of servo track according to a ratio between amplitude of a correction value spectrum of a radial position of the servo track at a first circumferential position and at a second circumferential position when positioning control of the head to a target data track is performed on a basis of servo information read from the servo track. At the first circumferential position, a relative speed of a change in the radial position of the servo track with respect to a radial position of the target data track becomes a first speed. At the second circumferential position, a relative speed of a change in the radial position of the servo track with respect to the radial position of the target data track becomes a second speed.
G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p.ex. pour compenser les irrégularités de surface ou pour suivre les pistes pour suivre les pistes d'un disque
According to one embodiment, a magnetic disk device comprises a magnetic head including a main pole, an auxiliary magnetic pole, side shields disposed on both sides of the main pole in a track width direction with a side gap therebetween, a high frequency oscillation element disposed in the write gap between the main pole and the auxiliary magnetic pole, and a magnetic flux control element disposed in the side gap between the main pole and the side shield to control oscillation frequency of the high frequency oscillation element, an oscillation element controller configured to control bias current supplied to the high frequency oscillation element, and a magnetic flux control element controller configured to control bias current supplied to the magnetic flux control element.
A semiconductor device includes: a semiconductor chip having a first surface, a second surface, a first electrode provided on the first surface, a second electrode provided on the second surface, and a third electrode provided on the second surface; a first conductor including a fourth conductor and a fifth conductor; a conductive first connector provided between the first conductor and the first electrode; a second conductor including a sixth conductor and a seventh conductor; a conductive second connector provided between the second electrode and the sixth conductor; a third conductor including an eighth conductor, an intermediate conductor, and a ninth conductor, the intermediate conductor being provided between the eighth conductor and the ninth conductor, the eighth conductor being provided between the semiconductor chip and the intermediate conductor, and the intermediate conductor having a through hole; and a conductive third connector.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
A superconducting layer joint structure of embodiments includes: a first superconducting layer; a second superconducting layer; and a joint layer provided between the first superconducting layer and the second superconducting layer and containing a plurality of crystal particles containing a rare earth element (RE), barium (Ba), copper (Cu), and oxygen (O). The plurality of crystal particles includes at least one first particle. The at least one first particle has a first inner region and a first outer region. The first inner region is disposed inside the first superconducting layer. The first outer region is disposed outside the first superconducting layer.
According to one embodiment, a radar system for inspecting a target, includes transmit antennas, receive antennas, and a processing unit. The processing unit is configured to select at least one transmit antenna among the transmit antennas and at least one receive antennas among the receive antennas, based on a shape of the target, make the at least one transmit antenna transmit an electromagnetic wave, and make the at least one receive antenna receive the electromagnetic wave.
G01S 13/86 - Combinaisons de systèmes radar avec des systèmes autres que radar, p.ex. sonar, chercheur de direction
G01S 7/35 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe - Détails de systèmes non impulsionnels
A method of producing a light water reactor fuel assembly may include: setting conditions at least concerning an operation cycle period and burnup; setting an initial enrichment of enriched uranium; calculating excess reactivity of a light water reactor core where light water reactor fuel assemblies including the enriched uranium are burned until an end stage of a final operation cycle; determining whether a condition where excess reactivity at an end of a first operation cycle in the burnup calculation step is close to a predetermined positive value is true or not; and returning to the setting of the initial enrichment, when it is determined at the determining that the situation is not true, or deciding an enrichment of the enriched uranium when it is determined that the situation is true.
G21C 3/328 - Disposition relative des éléments dans le réseau
G21C 3/326 - Faisceaux d'éléments combustibles en forme d'aiguilles, de barres ou de tubes parallèles comprenant, en plus des éléments combustibles, d'autres éléments en forme d'aiguille, de barre ou de tube, p.ex. barres de commande, barres de support de grilles, barres fertiles, barres à poison ou barres factices
According to one embodiment, there is provided a semiconductor device including a chip, a drain electrode arranged on a first surface of the chip, a source electrode arranged on a second surface provided on a back side of the first surface of the chip and having a front surface on a device bottom surface, a gate electrode having a front surface on the device bottom surface, and a wire connecting a first region of the gate electrode to a second region on the second surface of the chip.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
According to one embodiment, an isolator includes a first electrode, a second electrode, a conductive body, and a first insulating layer. The second electrode is provided on the first electrode and separated from the first electrode. The conductive body is provided around the first and second electrodes along a first plane perpendicular to a first direction. The first direction is from the first electrode toward the second electrode. The first insulating layer is provided on the second electrode. The first insulating layer includes silicon, carbon, and nitrogen.
Toshiba Infrastructure Systems & Solutions Corporation (Japon)
Inventeur(s)
Doi, Toshinori
Abrégé
A communication relay system of an embodiment includes a master unit capable of transmitting/receiving a signal to/from a base station of a mobile communication system, and a plurality of remote units transmitting/receiving a signal to/from the master unit and performing radio communication with a mobile station of the mobile communication system. The master unit includes a detector, a determiner, and an allocator. The detector detects that the mobile station is located at a position where wireless communication with the plurality of remote units is possible. The determiner determines to which of the plurality of remote units a communication resource for performing radio communication with the mobile station located at a position where radio communication is possible is to be allocated. The allocator allocates a communication resource to the remote unit according to the determination result of the determiner.
In general, according to one embodiment, protection circuit includes first to third power supply lines, a first resistor, a first capacitor, a first transistor, and first to third inverters. The first resistor is coupled between the first power supply line and a first node. The first capacitor is coupled between the first node and the third power supply line. The first inverter includes a first power supply end, a second power supply end, and an input end. The first power supply end of the first inverter is coupled to the second power supply line. The second power supply end of the first inverter is coupled to the third power supply line. The input end of the first inverter is coupled to the first node.
According to one embodiment, semiconductor device includes a first terminal, a second terminal, a first transistor, a second transistor, a third transistor, a fourth transistor, and a control circuit. The control circuit is configured to control the first transistor, the second transistor, the third transistor, and the fourth transistor. The control circuit is configured to, when supply of the first voltage to the third node is stopped, turn the second transistor from an off state to an on state, turn the third transistor and the fourth transistor from an on state to an off state, and after a first period passes, turn the first transistor from an off state to an on state.
H03K 17/0812 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande
H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
56.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device according to an embodiment includes a semiconductor substrate, a cell region, and a termination region. The termination region surrounds the cell region and includes a plurality of first diffusion layers containing a first conductivity type impurity. In a cross-section of the termination region in a first direction perpendicular to the first face, at least one of the plurality of first diffusion layers includes a first region extending in the first direction from the first face toward a second face of the semiconductor substrate, and a second region extending in a second direction orthogonal to the first direction from the first region. The concentration of the first conductivity type impurity contained in the second region is lower than the concentration of the first conductivity type impurity contained in the first region.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
According to one embodiment, there is provided a semiconductor device including a chip, and a gate electrode connected to a gate electrode pad provided on the chip. The gate electrode includes an external exposed portion having an external exposed surface that is flush with an external exposed surface of a sealing resin, and a gate electrode pad connection portion continuous with the external exposed portion and connected to the gate electrode pad, the gate electrode pad connection portion including a portion sandwiched between the gate electrode pad and a part of the sealing resin.
A power supply circuit of an embodiment includes a first transistor including a source connected to an input terminal, and a gate connected to a first node; a second transistor including a drain connected to a drain of the first transistor, and a source connected to an output terminal; a third transistor including a source connected to the input terminal, a drain connected to the first node, and a gate connected to a second node; and a Zener diode including an anode connected to the input terminal, and a cathode connected to the second node.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
A controller of a magnetic disk device obtains, for each of a plurality of first position sets, a first distribution that is a radial distribution of differences between a target orbit of the magnetic head and an actual position of the magnetic head while correcting a disturbance synchronized with rotation of the magnetic disk by using correction amounts at a plurality of positions included in one of the plurality of first position sets. The controller performs weighting the first distribution according to a position in the radial direction and calculating an evaluation value based on the weighted first distribution for each of the plurality of first position sets. The controller selects a second position set from the plurality of first position sets based on the evaluation value. The controller records correction amounts at a plurality of positions included in the second position set by the magnetic head.
G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p.ex. pour compenser les irrégularités de surface ou pour suivre les pistes pour suivre les pistes d'un disque
60.
METHOD OF CALCULATING THREE-DIMENSIONAL SHAPE INFORMATION OF OBJECT SURFACE, OPTICAL SYSTEM, NON-TRANSITORY STORAGE MEDIUM, AND PROCESSING APPARATUS FOR OPTICAL SYSTEM
According to an embodiment, a method of calculating three-dimensional shape information of an object surface comprising: acquiring, color-mapping, and calculating. The acquiring includes acquiring an image captured through an anisotropic wavelength selection portion having at least two different regions configured to select a wavelength to be shielded and a wavelength to be passed from reflected light from the object surface illuminated with light. The color-mapping includes color-mapping light beam directions based on the image. The calculating includes calculating three-dimensional shape information of the object surface from a geometric optics relational expression between an inclination angle of the object surface and the light beam direction.
G01B 11/25 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes en projetant un motif, p.ex. des franges de moiré, sur l'objet
A solid-state imaging device according to the present embodiment includes a semiconductor region and an antireflection film. In the semiconductor region, a blue photodiode that detects blue light, a green photodiode that detects green light, and a red photodiode that detects red light are arranged. The antireflection film includes a first insulating film disposed on the semiconductor region and a second insulating film disposed on the first insulating film and having a refractive index higher than a refractive index of the first insulating film. At least one of the first insulating film and the second insulating film has a film thickness in a region through which light received by the blue photodiode is transmitted thinner than a film thickness in a region through which light received by the green photodiode is transmitted.
A semiconductor device can include: a semiconductor chip including a first and second surface, a first electrode on the first surface, an active area on the second surface, a second electrode on the second surface, and a third electrode on the second surface; a first conductive member in the active area of the semiconductor chip and electrically connected to the semiconductor chip; a second conductive member in a second area and isolated from the first conductive member, the second area an area in which, when viewed from above, with respect to a first area of the active area in which the first conductive member is not provided, circles sharing centers of shortest distances between an outer periphery of the first conductive member and an outer periphery of the active area can be drawn largest in the first area; and a lead terminal connected to the first conductive member.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
According to one embodiment, a semiconductor device includes: a semiconductor chip including a first surface, a second surface, a first electrode, a second electrode, and a third electrode; a first conductor including a first portion and a first intermediate portion, a second conductor including a third portion, a second intermediate portion, and a fourth portion, and a length of the first intermediate portion in a second direction being longer than a length of the third portion in the second direction; a third conductor provided on a first surface side of the semiconductor chip; a conductive first connector provided between the first intermediate portion of the first conductor and the third portion of the second conductor; a conductive second connector provided between the second electrode and the first portion; and a conductive third connector provided between the third conductor and the first electrode.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A semiconductor device includes an input-side lead, a light-emitting element on the input-side lead, an output-side lead, a switching element on the output-side lead, and a light-receiving element on the switching element. The switching element is provided between the light-emitting element and the output-side lead. The switching element includes a front-side electrode and a control pad arranged along a front surface side thereof. The light-receiving element is provided on the front-side electrode of the switching element via an insulative connection member. The light-receiving element is positioned between the first switching element and the light-emitting element. The light-receiving element includes first and second bonding pads; the first bonding pad is electrically connected to the control pad of the switching element via a first conductive member; and the second bonding pad is electrically connected to the front-side electrode of the switching element via a second conductive member.
H01L 33/56 - Matériaux, p.ex. résine époxy ou silicone
H01L 33/38 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails caractérisés par les électrodes ayant une forme particulière
H01L 33/62 - Dispositions pour conduire le courant électrique vers le corps semi-conducteur ou depuis celui-ci, p.ex. grille de connexion, fil de connexion ou billes de soudure
A semiconductor device includes a nitride semiconductor element, a first diode, and a second diode; the nitride semiconductor element includes a conductive mounting bed, a semiconductor substrate formed on the mounting bed, a first nitride semiconductor layer, a second nitride semiconductor layer, a first major electrode, a second major electrode, a first gate electrode, and a second gate electrode; the first diode includes a first anode electrode electrically connected to the mounting bed, and a first cathode electrode electrically connected to the first major electrode; and the second diode includes a second anode electrode electrically connected to the mounting bed, and a second cathode electrode electrically connected to the second major electrode.
A semiconductor device includes a first conductive layer, a semiconductor layer, first to second control electrodes, and first to second electrode pads. The first conductive layer includes first to second conductive regions. The second conductive region is thinner than the first conductive region. The semiconductor layer is located on the first conductive layer, and includes first to fifth semiconductor regions. The first control electrode faces the first, second, and third semiconductor regions via a first insulating film. The second control electrode faces the first, fourth, and fifth semiconductor regions via a second insulating film. The first electrode pad is located above the semiconductor layer and electrically connected with the third semiconductor region. The second electrode pad is located above the semiconductor layer and electrically connected with the fifth semiconductor region. At least a portion of the first conductive region is positioned below the first and second electrode pads.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/482 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes formées de couches conductrices inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
According to one embodiment, a magnetic disk device comprises a JIT seek control unit, which uses second time series data of a current indication value of a VCM that sets a slope having an absolute value smaller than an absolute value of a slope of a first time series data in at least one of a monotonically decreasing interval of an acceleration interval and a monotonically decreasing interval of a deceleration interval of a head or an operation acceleration of the head.
A molecular sensor includes: a base; and a sensitive film provided above the base and containing a metal organic framework and a hydrophobic polymer, a contact angle respect to water of the hydrophobic polymer being larger than that of the metal organic framework. The metal organic framework is on the base side of the sensitive film, and the hydrophobic polymer is above the metal organic framework in the sensitive film.
MANUFACTURING METHOD FOR ELECTROLYTE MEMBRANE INCLUDING NOBLE METAL PARTICLES, ELECTROLYTE MEMBRANE INCLUDING NOBLE METAL PARTICLES, MEMBRANE ELECTRODE ASSEMBLY, ELECTROCHEMICAL CELL, STACK, AND ELECTROLYZER
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Nakano, Yoshihiko
Yoshinaga, Norihiro
Abrégé
A manufacturing method for a electrolyte membrane including noble metal particles according to an embodiment includes a step of impregnating cationic noble metal complex ions with a first region of a surface of a cation exchange membrane by spraying solution containing the cationic noble metal complex ions on the cation exchange membrane and drying the sprayed member, and a step of applying a reducing treatment to the cation exchange membrane impregnated with the cationic noble metal complex ions.
C25B 13/05 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Éléments d'espacement caractérisés par le matériau à base de matériaux inorganiques
C25B 9/19 - Cellules comprenant des électrodes fixes de dimensions stables; Assemblages de leurs éléments de structure avec des diaphragmes
According to one embodiment, an image encoding method includes selecting a motion reference block from an encoded pixel block to which an inter prediction is applied. The method includes selecting one or more available blocks from the motion reference block. The method includes selecting a selection block from the available blocks. The method includes generating a predicted image of the encoding target block using motion information of the selection block. The method includes encoding a prediction error between the predicted image and an original image. The method includes encoding selection information specifying the selection block by referring to a code table decided according to a number of the available blocks.
H04N 19/105 - Sélection de l’unité de référence pour la prédiction dans un mode de codage ou de prédiction choisi, p.ex. choix adaptatif de la position et du nombre de pixels utilisés pour la prédiction
H04N 19/109 - Sélection du mode de codage ou du mode de prédiction parmi plusieurs modes de codage prédictif temporel
H04N 19/119 - Aspects de subdivision adaptative, p.ex. subdivision d’une image en blocs de codage rectangulaires ou non
H04N 19/137 - Mouvement dans une unité de codage, p.ex. différence moyenne de champs, de trames ou de blocs
H04N 19/139 - Analyse des vecteurs de mouvement, p.ex. leur amplitude, leur direction, leur variance ou leur précision
H04N 19/15 - Débit ou quantité de données codées à la sortie du codeur par contrôle de la taille réelle des données compressées au niveau de la mémoire avant de décider du stockage dans la mémoire tampon de transmission
H04N 19/159 - Type de prédiction, p.ex. prédiction intra-trame, inter-trame ou de trame bidirectionnelle
H04N 19/176 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant le codage adaptatif caractérisés par l’unité de codage, c. à d. la partie structurelle ou sémantique du signal vidéo étant l’objet ou le sujet du codage adaptatif l’unité étant une zone de l'image, p.ex. un objet la zone étant un bloc, p.ex. un macrobloc
H04N 19/182 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant le codage adaptatif caractérisés par l’unité de codage, c. à d. la partie structurelle ou sémantique du signal vidéo étant l’objet ou le sujet du codage adaptatif l’unité étant un pixel
H04N 19/52 - Traitement de vecteurs de mouvement par encodage par encodage prédictif
H04N 19/61 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant un codage par transformée combiné avec un codage prédictif
H04N 19/70 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques caractérisés par des aspects de syntaxe liés au codage vidéo, p.ex. liés aux standards de compression
71.
Determining absolute position on HDD spiral patterns using dual TDMR readers
A method of determining radial position of a magnetic head that includes a first read sensor and a second read sensor includes: with the first read sensor, detecting a servo spiral formed on a disk; with the second read sensor, detecting the servo spiral; measuring a time interval between when the servo spiral is detected by the first read sensor and when the servo spiral is detected by the second read sensor; and based on the time interval, determining a radial position of the magnetic head relative to the disk.
G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p.ex. pour compenser les irrégularités de surface ou pour suivre les pistes pour suivre les pistes d'un disque
G01D 5/248 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques produisant des impulsions ou des trains d'impulsions en faisant varier la fréquence de répétition de l'impulsion
G11B 5/56 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de régler la position relative de la tête et du support d'enregistrement, p.ex. réglage manuel pour la correction d'azimuth ou pour le centrage de la piste
72.
Measuring VCM radial location using flex circuit shape during spiral write
In a disk drive that includes a magnetic head and a flexible printed circuit board (FPCB) coupled to an actuator for the magnetic head, a method of writing servo information includes: receiving a signal based on an electrical property of a material included in the FPCB, wherein the electrical property of the material changes as the actuator moves; determining a radial position of the magnetic head relative to a disk of the disk drive based on the signal; and controlling a radial velocity of the magnetic head relative to the disk of the disk drive based on the radial position.
G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p.ex. pour compenser les irrégularités de surface ou pour suivre les pistes pour suivre les pistes d'un disque
73.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes: a semiconductor part including a first semiconductor layer and a second semiconductor layer in contact with the first semiconductor layer; a first electrode electrically connected to the first semiconductor layer on a front surface side or a back surface side of the semiconductor part; a second electrode electrically connected to the second semiconductor layer on the front surface side of the semiconductor part; a gate electrode; an interlayer insulating film electrically insulating the gate electrode and the second electrode on the front surface side of the semiconductor part; and a third semiconductor layer having: a first region in contact with the second semiconductor layer and the second electrode on the front surface side of the semiconductor part; and a second region provided between the interlayer insulating film and the second electrode in a second direction perpendicular to a first direction.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
A semiconductor device includes a semiconductor part, first to fourth electrodes and a control electrode. The first and second electrodes are provided respectively on back and front surfaces of the semiconductor part. The third electrode is provided between the first and second electrodes, and provided in the semiconductor part with a first insulating film interposed. The fourth and control electrodes are provided between the second and third electrodes. The fourth and control electrodes extends into the semiconductor part from the front side and faces the third electrode with a second insulating film interposed. The fourth electrode is positioned between the semiconductor part and the control electrode. The first insulating film extends between the semiconductor part and the control electrode and between the semiconductor part and the fourth electrode. The fourth electrode faces the control electrode with a third insulating film interposed, and is electrically connected to the third electrode.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
According to one embodiment, a flexure for use in a suspension assembly includes: a supporting plate; a wiring member including a metal plate and a wiring substrate placed on the metal plate and has a tip-side portion placed on the supporting plate, a base end-side portion extending to an outside of the supporting plate, and a first end provided at an extension end of the base end-side portion; and a piezoelectric element mounted on the wiring member. The wiring substrate includes an insulating layer and a conductive layer stacked on the insulating layer, the conductive layer having a plurality of connecting pads including a ground pad to which a ground electrode of the piezoelectric element is connected, a plurality of connecting terminals provided at the first end and including a ground terminal, and a plurality of traces including a ground trace connecting the ground pad and the ground terminal.
G11B 33/14 - Diminution de l'influence des paramètres physiques, p.ex. changements de température, humidité, poussière
G11B 5/48 - Disposition ou montage des têtes par rapport aux supports d'enregistrement
H10N 30/20 - Dispositifs piézo-électriques ou électrostrictifs à entrée électrique et sortie mécanique, p.ex. fonctionnant comme actionneurs ou comme vibrateurs
H10N 30/50 - Dispositifs piézo-électriques ou électrostrictifs avec une structure empilée ou multicouche
H10N 30/87 - Dispositifs piézo-électriques ou électrostrictifs - Détails de structure Électrodes ou interconnexions, p.ex. connexions électriques ou bornes
According to one embodiment, a semiconductor device includes: a chip; a first electrode provided on the chip; a first connector provided above the first electrode, extending in a first direction, and provided with a joint portion to be joined to the first electrode, on an end portion in the first direction of the first connector; and a joint member for use in joint between the first electrode and the joint portion. The joint portion is provided with a notch portion on at least one end portion in the first direction of an upper surface of the joint portion. The joint member is in contact with the first electrode, a lower surface of the joint portion facing the first electrode, and at least, part of the notch portion.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A digital isolator includes: an edge detection circuit configured to output a first detection signal and a second detection signal; a driving buffer circuit configured to output a first edge signal and a second edge signal; an isolation element configured to output a first edge signal and a second edge signal; a receiving inverter circuit configured to output a first reception signal and a second reception signal; a latch circuit configured to latch data based on the pulse of the first received signal and the pulse of the second received signal, and to output an output signal to an output terminal according to the data; a switch circuit configured to switch a state of conduction between the reference potential and the first output and a state of conduction between the reference potential and the second output; and a control circuit configured to control a switching operation.
H03K 19/20 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion caractérisés par la fonction logique, p.ex. circuits ET, OU, NI, NON
According to one embodiment, an electronic device includes a wall and a substrate. The substrate is provided with an opening. The substrate includes an organic compound layer, a first surface of the organic compound layer, a second surface of the organic compound layer opposite the first surface, first wiring on the second surface, second wiring on the second surface, a first pad, and a second pad. The first surface is attached to the wall. The first pad is connected to the first wiring. The second pad is connected to the second wiring away from the first pad. The opening penetrates the organic compound layer to open to the first surface and the second surface between the first pad and the second pad.
According to one embodiment, a magnetic disk device includes a magnetic disk, a magnetic head including a write head, a read head, a heater which adjusts a flying height of the read head and a detection portion which detects a flying height of the read head, and a controller which controls a power value supplied to the heater in accordance with the flying height, and, when a read error occurs, detects, with the detection portion, the flying height of the read head in an error occurrence region, determines an assist amount to bring the flying height in the error occurrence region to a pre-set reference flying height, and executes re-try read of the error occurrence region while inputting a power value corresponding to the assist amount to the heater.
According to one embodiment, there is provided a disk device including a first connector, a second connector and a controller. The first connector is connectable to a host. The first connector includes a first pin that is electrically connectable to a light emitting device in the host. The second connector is connectable to the host. The second connector includes a second pin that is receivable with data from the host. The controller is communicable with predetermined information with the host via the first pin.
A semiconductor device according to the present embodiment includes a drain electrode, a source electrode, a semiconductor region disposed between the drain electrode and the source electrode, a gate electrode disposed in the semiconductor region via a first insulation film, and a second insulation film disposed between the gate electrode and the source electrode and having a specific dielectric constant higher than a specific dielectric constant of the first insulation film.
A semiconductor device includes a first electrode, a second electrode, a third electrode located between the first electrode and the second electrode, a first semiconductor layer connected to the first electrode, a second semiconductor layer connected to the second electrode, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of the second conductivity type. The third electrode includes first and second portions. The first semiconductor layer faces the first portion via an insulating layer. The first and second semiconductor layers are of a first conductivity type and include silicon and carbon. A carrier concentration of the fourth semiconductor layer is greater than a carrier concentration of the third semiconductor layer.
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
A level shift circuitry includes a first impedance, a second impedance, a first transistor, a second transistor, a current source, and a first capacitor. The first impedance and the second impedance have a first end connected to a positive-side power supply voltage. The first transistor has a control terminal and a first end connected to a second end of the first impedance. The second transistor has a control terminal, a first end connected to a second end of the second impedance, and a second end connected to a second end of the first transistor. The current source has a first end connected to the second end of the first transistor and a second end connected to a negative-side power supply voltage. The first capacitor has a first end connected to the second end of the second impedance and a second end.
A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.
A semiconductor device according to the present embodiment includes: a first electrode; a first semiconductor region of a first conductivity type disposed above the first electrode; a second semiconductor region of a second conductivity type disposed on the first semiconductor region; a third semiconductor region of the first conductivity type disposed on the second semiconductor region; a second electrode disposed in the first semiconductor region; a third electrode facing the second semiconductor region via a second insulating film; a fourth electrode having a portion adjacent to a part of the second semiconductor region and the third semiconductor region in the second direction, the second semiconductor region, and the third semiconductor region; and a fifth electrode disposed in the first insulating film, having a bottom located closer to the first electrode than a bottom of the portion, having a top located on an upper surface of the first insulating film.
According to one embodiment, a disk device includes a rotatable magnetic disk, an actuator which supports and moves a head, a ramp which holds the head at an unloaded position, a motor which rotates the magnetic disk, and a controller which performs a load operation and a seek operation. When a radial travel speed of the head during the load operation is referred to as Vr1, a circumferential travel speed of the head is referred to as Vt1, a radial travel speed of the head during the seek operation is referred to as Vrs, and a circumferential travel speed is referred to as Vts, the controller controls at least one of the radial travel speed of the head and number of revolutions of the magnetic disk to satisfy a relationship (Vr1/Vt1)<(Vrs/Vts).
A light detector according to one embodiment, includes a substrate. The substrate includes a first semiconductor layer, an insulating layer, and a second semiconductor layer. The insulating layer is located on the first semiconductor layer. The second semiconductor layer is located on the insulating layer. The second semiconductor layer includes a photoelectric conversion part. The photoelectric conversion part includes a first semiconductor region and a second semiconductor region. The substrate includes a void and a trench. The void is positioned below the photoelectric conversion part and between the first semiconductor layer and the second semiconductor layer. The trench surrounds the photoelectric conversion part. A lower end of the trench is positioned in the second semiconductor layer. The photoelectric conversion part is electrically connected with an upper surface side of the substrate via a portion below the trench.
According to one embodiment, a radar device comprises a panel including clusters and a controller. The controller is configured to cause a first cluster of the clusters to transmit an electromagnetic wave to a target, cause the first cluster and at least one second cluster adjacent to the first cluster to receive a reflected wave from the target, and cause the first cluster and the at least one second cluster to output a reception signal. At least one cluster other than the first cluster and other than the at least one second cluster does not output the reception signal.
G01S 13/34 - Systèmes pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées utilisant la transmission d'ondes continues modulées en fréquence, tout en faisant un hétérodynage du signal reçu, ou d’un signal dérivé, avec un signal généré localement, associé au signal transmis simultanément
G01S 7/35 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe - Détails de systèmes non impulsionnels
89.
MANUFACTURING DATA ANALYSIS DEVICE, SYSTEM, AND METHOD
According to one embodiment, a manufacturing data analysis device includes processing circuitry. The processing circuitry acquires manufacturing data including a manufacturing condition data group and a quality data group. The processing circuitry calculates one or more degrees of influence exerted by first manufacturing condition data included in the manufacturing condition data group on respective pieces of quality data included in the quality data group by analyzing the manufacturing data. The processing circuitry, in a case where one or more degrees of influence satisfy a determination condition, generates output data related to at least one of the first manufacturing condition data, one or more pieces of quality data on which the first manufacturing condition data has exerted the degrees of influence satisfying the determination condition, or the degrees of influence satisfying the determination condition.
According to one embodiment, a structure evaluation system according to an embodiment includes a plurality of sensors, a position locator, a corrector, and an evaluator. The plurality of sensors detect elastic waves generated from a structure. The position locator is configured to locate positions of sources of a plurality of elastic waves detected by the plurality of sensors on the basis of the plurality of elastic waves. The corrector is configured to correct information based on the position location in the position locator using a correction value which is determined according to a temperature of the structure. The evaluator is configured to evaluate a deterioration state of the structure on the basis of the corrected information.
G01N 29/14 - Recherche ou analyse des matériaux par l'emploi d'ondes ultrasonores, sonores ou infrasonores; Visualisation de l'intérieur d'objets par transmission d'ondes ultrasonores ou sonores à travers l'objet utilisant des techniques d'émission acoustique
In general, according to one embodiment, a recycling method is provided. The method includes dispersing an electrode containing a niobium titanium oxide in water; separating the niobium titanium oxide from the electrode dispersed in the water; and applying a first heat treatment to the separated niobium titanium oxide.
According to one embodiment, a structure evaluation system of an embodiment includes one or more sensors, a signal processing apparatus, and an evaluator. The plurality of sensors detect elastic waves generated from a structure. The signal processing apparatus calculates information on a frequency distribution by amplitude scale based on the plurality of elastic waves detected by each of the one or more sensors, and transmits the calculated information on the frequency distribution by amplitude scale in a wireless manner. The evaluator evaluates a state of deterioration of the structure based on the information on the frequency distribution by amplitude scale which is transmitted from the signal processing apparatus.
According to an embodiment, a non-transitory storage medium stores an optical inspection program. The optical inspection program causes a processor to execute generating a wavelength selection portion-removed image by removing, from a captured image of an object surface imaged through a wavelength selection portion configured to select at least two different wavelength spectra from incident light, an image of the wavelength selection portion included in the captured image.
G01N 21/31 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique
A molecular structure optimization system includes a quantum computer and a classical computer. The quantum computer uses a parameterized quantum circuit to calculate a loss function from a coordinate parameter of a target molecule. The classical computer updates the coordinate parameter and the circuit parameter based on the loss function, and determines optimum values of the circuit parameter and the coordinate parameter. The classical computer updates a provisional value of the circuit parameter while fixing the coordinate parameter and changing the circuit parameter. The classical computer updates a provisional value of the coordinate parameter while fixing the circuit parameter and changing the coordinate parameter.
G16C 10/00 - Chimie théorique computationnelle, c. à d. TIC spécialement adaptées aux aspects théoriques de la chimie quantique, de la mécanique moléculaire, de la dynamique moléculaire ou similaires
According to an embodiment, an optical inspection apparatus includes: an illumination portion, a wavelength selection portion and an imaging portion. The illumination portion irradiates a first object point of a surface of an object with first illumination light, and a second object point of the surface of the object with second illumination light. The imaging portion images light from the first object point through the wavelength selection portion when a normal direction at the first object point and a direction of the first illumination light have an opposing relationship, and images light from the second object point through the wavelength selection portion when a normal direction at the second object point and a direction of the second illumination light have an opposing relationship.
G01N 21/25 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
G01N 21/29 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en utilisant la détection visuelle
A sequestration system includes: an electrolysis part having an electrolysis cell having an anode, a cathode, an anode flow path facing on the anode, and a cathode flow path facing on the cathode; and a reaction part configured to switch a first operation and a second operation, the first operation including producing solid carbon using a catalyst from a first raw material containing a first fluid to be introduced from the cathode flow path, and the second operation including performing a reaction of a second raw material containing a second fluid to be introduced from the anode flow path and solid carbon to be deposited on the catalyst to remove at least a part of the deposited solid carbon from the catalyst.
C25B 9/19 - Cellules comprenant des électrodes fixes de dimensions stables; Assemblages de leurs éléments de structure avec des diaphragmes
C25B 15/021 - Commande ou régulation des opérations de chauffage ou de refroidissement
C25B 15/08 - Alimentation ou vidange des réactifs ou des électrolytes; Régénération des électrolytes
97.
Charging Method of Battery Pack, Management Method of Storage System, Management Apparatus of Battery Pack, Storage System, and Non-Transitory Storage Medium
In one embodiment, there is provided a charging method of a battery pack in which a plurality of aqueous battery cells are electrically connected in series. In this charging method, in a case where the battery pack reaches a reference voltage by a constant-current charging at a first charging rate, constant-current charging is performed on the battery pack at the second charging rate lower than the first charging rate and being from 0.01 C or more to 0.05 C or less. Then, this constant-current charging at the second charging rate is continued until a charged electric charge amount from a start timing of the constant-current charging at the second charging rate reaches a reference electric charge amount set from 1% or more to 5% or less of the nominal capacity of the battery pack.
An information processing apparatus according to one embodiment, includes: a vulnerability database storing vulnerability information including a vulnerability identifier for uniquely specifying vulnerability, a software identifier for uniquely specifying software including the vulnerability, and vulnerability description indicating content of the vulnerability; a matching processor to specify, in the vulnerability database, vulnerability information matching a software identifier of a target software provided in target equipment; a causal component specifier to specify, from the vulnerability description in the vulnerability information specified by the matching processor, a causal component that is a cause of the vulnerability; a type determiner to determine a type of the causal component from a name of the specified causal component; and an output processor to determine, based on the software identifier of the target software and the type of the causal component, an investigation procedure concerning vulnerability of the target software and output information indicating the investigation procedure.
G06F 21/57 - Certification ou préservation de plates-formes informatiques fiables, p.ex. démarrages ou arrêts sécurisés, suivis de version, contrôles de logiciel système, mises à jour sécurisées ou évaluation de vulnérabilité
G06F 21/54 - Contrôle des usagers, programmes ou dispositifs de préservation de l’intégrité des plates-formes, p.ex. des processeurs, des micrologiciels ou des systèmes d’exploitation au stade de l’exécution du programme, p.ex. intégrité de la pile, débordement de tampon ou prévention d'effacement involontaire de données par ajout de routines ou d’objets de sécurité aux programmes
99.
SECONDARY BATTERY, BATTERY PACK, VEHICLE, AND STATIONARY POWER SUPPLY
In general, according to one embodiment, a secondary battery includes a positive electrode, a negative electrode, an aqueous electrolyte, and a gas treatment structure. The gas treatment structure is configured to be capable of treating hydrogen gas using an electrical conduction between the gas treatment structure and the positive electrode.
H01M 10/52 - Enlèvement des gaz situés à l'intérieur de l'élément secondaire, p.ex. par absorption
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
According to one embodiment, a noise reduction system includes a microphone, a loudspeaker, and processing circuitry. The processing circuitry switches an operating mode between a control mode and a path characteristic measurement mode, includes a control filter that generates a control signal that causes the loudspeaker to output a control sound for reducing noise, based on a detection signal obtained by detecting a first sound including the noise with the microphone, measures a path characteristic including an acoustic characteristic between the loudspeaker and the microphone, and generates the control filter by using a measurement result of the path characteristic and a noise feature signal including a feature of the noise.
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