A head suspension assembly includes a supporting plate, a wiring member that has a gimbal portion and is provided on the supporting plate, and a magnetic head that has a slider having a bonding face opposing the gimbal portion across a gap and a head portion provided on the slider, and is fixed to the gimbal portion with an adhesive positioned between the bonding face and the gimbal portion. A gap region between the bonding face and the gimbal portion includes a first region in which the adhesive is disposed, a second region enclosing the first region, and a third region enclosing the second region. A distance between the bonding face and the gimbal portion in the second region is bigger than a distance between the bonding face and the gimbal portion in the first region and the third region.
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Hirano, Tatsuma
Uchida, Daisuke
Takaya, Satoshi
Tandai, Tomoya
Nishikawa, Hiroyuki
Abrégé
According to one embodiment, a radio wave information management system includes an information stored unit, a radio wave information determination unit, and a route setting unit. The information stored unit stores radio wave information, and location information and time information associated with the radio wave information. The radio wave information determination unit sets reliability information for the radio wave information based on at least one of the location information and the time information. The route setting unit sets a route of a mobile object based on the reliability information.
According to one embodiment, when a predetermined context is established in the communication area, the user of the reception or transmission side can receive or provide service information, in unconsciously. The system broadcasts a packet as a beacon signal, the packet consists of a header area containing communication standard data and a user area in which the device ID being used and context data can be written. When the beacon signal is received and detection data indicating that the data is a corresponding relationship with the context data set by its own device, service information is output.
H04L 67/63 - Ordonnancement ou organisation du service des demandes d'application, p.ex. demandes de transmission de données d'application en utilisant l'analyse et l'optimisation des ressources réseau requises en acheminant une demande de service en fonction du contenu ou du contexte de la demande
H04L 67/52 - Services réseau spécialement adaptés à l'emplacement du terminal utilisateur
According to one embodiment, a sensor includes a base including a first base region and a second base region, and an element section. The element section includes a fixed electrode fixed to the second base region, a first fixed member fixed to the first base region, a first intermediate member supported by the first fixed member, a first connecting member supported by the first intermediate member, a movable portion, and a first support member. The first connecting member includes a first connecting portion, a second connecting portion, and a third connecting portion. The movable portion is connected to the second connecting portion. The movable portion includes a movable electrode. A first gap is provided between the fixed electrode and the movable portion. The first support member is fixed to the base. The first support member supports the third connecting portion.
G01N 27/22 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la capacité
According to one embodiment, among a plurality of magnetic heads, the larger the magnetic pole width of the magnetic pole of the magnetic head in the width direction of a recording track formed in a recording layer or the larger an area width of the magnetic head capable of reading the magnetic characteristics of an area of the recording layer on which magnetic recording has been carried out by means of the magnetic head, the farther is the magnetic head arranged outwardly from the vicinity of the center in the parallel arrangement direction of the magnetic disks.
G11B 5/012 - Enregistrement, reproduction ou effacement sur des disques magnétiques
G11B 5/00 - Enregistrement par magnétisation ou démagnétisation d'un support d'enregistrement; Reproduction par des moyens magnétiques; Supports d'enregistrement correspondants
G11B 5/31 - Structure ou fabrication des têtes, p.ex. têtes à variation d'induction utilisant des films minces
G11B 5/39 - Structure ou fabrication de têtes sensibles à un flux utilisant des dispositifs magnétorésistifs
G11B 5/48 - Disposition ou montage des têtes par rapport aux supports d'enregistrement
G11B 25/04 - Appareils caractérisés par la forme du support d'enregistrement employé mais non spécifiques du procédé d'enregistrement ou de reproduction utilisant des supports d'enregistrement plats, p.ex. disques, cartes
An electrochemical device includes a housing, a first member and a second member provided between the housing and the first member. The housing has a first through hole including a first opening that faces the first member. The second member has a second through hole including a second opening.
According to one embodiment, a production pallet control system comprises a plurality of magnetic disk devices configured to execute a plurality of processes, and the magnetic disk devices configured to output status information related to the process based on a requires from the outside and a controller connected to the magnetic disk devices in a mutually communicable manner, the controller configured to inquire the status information of each of the magnetic disk devices.
G11B 7/24097 - Structures de détection, de commande, d’enregistrement ou permettant de rejouer; Formes ou structures spéciales de centrage ou pour empêcher le décentrage ; Dispositions de test, d’inspection ou d’évaluation; Réceptacles, cartouches ou cassettes
G11B 5/55 - Changement, sélection ou acquisition de la piste par déplacement de la tête
G11B 23/00 - Supports d'enregistrement, non spécifiques du procédé d'enregistrement ou de reproduction; Accessoires, p.ex. réceptacles, spécialement adaptés pour coopérer avec des appareils d'enregistrement ou de reproduction
According to an embodiment, a magnetic disk is provided with a first area including a plurality of blocks and a second area designated as a write destination by a host. The first memory is a volatile memory that receives write data received from the host. A controller estimates a degree of influence of ATI for each of the plurality of blocks, and sets a first block in which the degree of influence of ATI reaches the first threshold value and two blocks adjacent thereto to be unwritable. The controller selects one of one or more blocks which are not set to be unwritable and have free space among the plurality of blocks, and stores a copy of write data in the first memory in the selected one block at least for a period until the write data is written to the second area.
According to one embodiment, a sensor includes a base and an element section. The element section includes a fixed electrode, a first support structure, and a movable member. The first support structure includes, a first fixed member, a first intermediate member supported by the first fixed member, a first connecting member, a first support member, a first cross fixed member, a first cross intermediate member, and a first cross connecting member. The first connecting member includes a first connecting portion, a first support connecting portion, and a first intermediate connecting portion provided between the first connecting portion and the first support connecting portion. The first cross connecting member is supported by the first cross intermediate member. The movable member includes a
G01N 27/22 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la capacité
A ceramic circuit substrate according to an embodiment includes a ceramic substrate, a metal circuit, and a metal member. The metal circuit is located at one surface of the ceramic substrate. The thickness of the metal circuit is not less than 1 mm. The metal member is located at another surface of the ceramic substrate. The thickness of the metal member is not less than 1 mm. A ratio Vf/Vb of a total volume Vf of the metal circuit to a total volume Vb of the metal member is not less than 0.80 and not more than 1.20.
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
According to an embodiment, upon a failure in detection of a servo mark from servo data recorded in a first normal servo sector in a write operation, a controller of a magnetic disk device stops a write operation. Then, the controller demodulates the servo data including the servo mark, for the servo data recorded in a first short servo sector being a short servo sector immediately before the first normal servo sector, and resumes the write operation from a data area immediately after the first normal servo sector.
According to one embodiment, a sensor includes an element section including a first base and a first element. The first element includes a first fixed member fixed to the first base, a first connecting member supported by the first fixed member, and a first film portion supported by the first connecting member. A first gap is provided between the first base and the first film portion. The first film portion includes a first resistance layer, a first conductive layer, and a first conductive member. The first resistance layer does not overlap the first conductive layer in a first direction from the first base to the first fixed member. The first conductive member overlaps the first resistance layer and the first conductive layer in the first direction. A first electrical resistance of the first resistance layer changes according to a state of a detection target around the first element.
G01N 27/04 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance
14.
MAGNETIC HEAD WITH MULTILAYER CONFIGURATION BETWEEN MAGNETIC POLES AND MAGNETIC RECORDING DEVICE
According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a magnetic element provided between the first and the second magnetic poles. The magnetic element includes first to fourth magnetic layers, and first to fifth non-magnetic layers. The fourth magnetic layer includes a first element and at least one of Fe, Co or Ni. The first element including at least one selected from the group consisting of Cr, V, Mn, Ti, N and Sc. The fourth non-magnetic layer including at least one selected from the group consisting of Cu, Au, Cr, Al, V and Ag. The fifth non-magnetic layer includes at least one selected from the group consisting of Cu, Au, Cr, Al, V and Ag.
G11B 5/187 - Structure ou fabrication de la surface de la tête en contact physique avec le milieu d'enregistrement ou immédiatement adjacente à celui-ci; Pièces polaires; Entrefers
G11B 5/127 - Structure ou fabrication des têtes, p.ex. têtes à variation d'induction
G11B 5/31 - Structure ou fabrication des têtes, p.ex. têtes à variation d'induction utilisant des films minces
According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a magnetic element provided between the first and the second magnetic poles. The magnetic element includes first to fifth magnetic layers. A differential electric resistance of the magnetic element when a voltage between the first magnetic pole and the second magnetic pole being changed includes a first positive peak and a second positive peak. The voltage corresponding to the first positive peak is a first positive peak voltage. The voltage corresponding to the second positive peak is a second positive peak voltage. The second positive peak voltage is higher than the first positive peak voltage. An element voltage applied between the first magnetic pole and the second magnetic pole in a recording operation is higher than the second positive peak voltage.
A semiconductor device according to an embodiment includes a first electrode, a second electrode, a silicon carbide layer provided between the first electrode and the second electrode and including a first silicon carbide region of n type, a titanium nitride layer provided between the first electrode and the first silicon carbide region, and an intermediate layer provided between the titanium nitride layer and the first silicon carbide region and containing silicon nitride.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
According to one embodiment, a power conversion device includes: a plurality of DC-DC converter circuits configured to generate AC voltages at both ends of a plurality of first inductors by switching on a DC voltage and rectifies the AC voltages to output DC voltages; and a plurality of second inductors respectively magnetically coupled to the plurality of first inductors of the plurality of DC-DC converter circuits, wherein inputs and outputs of the plurality of DC-DC converter circuits are respectively connected in series and the plurality of second inductors are connected in parallel between two nodes.
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Jimbo, Tomohiko
Debasish, Biswas
Majima, Amane
Inoue, Tooru
Abrégé
The gas-circuit-breaker includes a container, opposing part, movable-part, and nozzle. An arc-extinguishing gas fills the container. The opposing-part is housed in the container and includes an opposing-arc-contact and an exhaust stack. The movable-part is housed in the container and includes a movable-arc-contact coming in contact with the opposing-arc-contact in a connected-state and separating from the opposing-arc-contact in an open-state; and a pressure-accumulation-part where an arc-extinguishing gas pressure increases. The nozzle is housed in the container and includes a space where arc-discharge occurs between the movable-arc-contact and the opposing-arc-contact. The nozzle includes a middle-part where the opposing-arc-contact is inserted and one or more jet-holes that eject, toward the space, partial arc-extinguishing gas flowing in from a flow-passage between the pressure-accumulation-part and the middle-part. The arc-extinguishing gas whose pressure increases in the pressure-accumulation-part flows into the space via the flow-passage and the jet-holes to extinguish the arc-discharge.
H01H 33/91 - Interrupteurs comportant des moyens séparés pour diriger, obtenir ou augmenter l'écoulement du fluide extincteur d'arc l'écoulement du fluide extincteur d'arc étant produit ou augmenté par le mouvement de pistons ou d'autres organes produisant une pression ce mouvement étant réalisé par ou conjointement avec le mécanisme qui actionne les contacts le fluide extincteur d'arc étant de l'air ou un gaz
A semiconductor chip includes a semiconductor layer, a first electrode located between a first conductive member and the semiconductor layer, a first gate pad located between the first conductive member and the semiconductor layer, a second gate pad located between the first conductive member and the semiconductor layer, and a second electrode located between the semiconductor layer and a second conductive member. A plurality of terminals includes a first gate terminal electrically connected to the first gate pad via the interconnection member, a second gate terminal electrically connected to the second gate pad via the interconnection member, and a sense terminal electrically connected to the first conductive member via the interconnection member. The sense terminal is located between the first gate terminal and the second gate terminal in a plan view perpendicular to a first direction.
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
20.
SONIC INSPECTION DEVICE, SONIC INSPECTION METHOD, AND CONTACT MEMBER FOR SONIC INSPECTION DEVICE
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Hirao, Akiko
Yamamoto, Noriko
Ono, Tomio
Nakai, Yutaka
Abrégé
A sonic inspection device of an embodiment includes: a sonic probe including a transducer configured to execute at least one of transmission and reception of a sound wave; and a contact member including: a first sheet-like member containing an elastomer and having a first surface that comes into contact with a sonic function surface of the sonic probe directly or with an intermediate member therebetween and a second surface opposite the first surface; and a second sheet-like member having a plurality of openings and provided in contact with the second surface of the first sheet-like member. The second sheet-like member includes a high-hardness member provided in at least a part in contact with the second surface and containing at least one selected from a polymer, a metal member, and a ceramic member higher in Young's modulus at room temperature than the first sheet-like member.
A semiconductor device includes first and second electrodes, first to sixth semiconductor regions, and a gate electrode. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region. The second semiconductor region includes a first part and a second part. The second part is located on a portion of the first part. The third semiconductor region is located on an other portion of the first part. The fourth semiconductor region separated from the third semiconductor region with the second part interposed. The fifth semiconductor region is located on the third semiconductor region. The sixth semiconductor region is located on the fifth semiconductor region. The gate electrode faces the portion of the fifth semiconductor region via a gate insulating layer. The second electrode is located on the fifth and sixth semiconductor regions.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
22.
PURCHASE DATA ANALYSIS APPARATUS, METHOD AND STORAGE MEDIUM
A purchase data analysis apparatus includes processing circuitry. The processing circuitry is configured to: acquire, on a customer-by-customer basis, customer information including an action time of a purchase-related action relating to purchase; generate, on a customer-by-customer basis, a customer representation representing an action pattern of a customer, based on the action time; generate, on a store-by-store basis, a store representation representing a representation of a customer coming to a store, based on the customer representation; and cluster stores by using the store representation.
According to the embodiment, an HDC receives a plurality of data segments from a host, and executes generation and addition of a first code and output of a data segment to which the first code is added to each data segment. An HDC calculates exclusive OR with respect to the first codes, and outputs obtained first information. The RWC performs data conversion and calculation of exclusive OR on the plurality of data segments to which the first code is added, and outputs the plurality of data segments after the data conversion and a track parity obtained by the calculation of the exclusive OR. The RWC acquires the first code from the plurality of data segments. The RWC calculates exclusive OR with respect to a group of the second codes which are the acquired first codes to acquire second information. The RWC compares the first information with the second information.
G11B 19/04 - Dispositions prévenant, évitant ou signalant la surimpression sur le même support, ou d'autres fonctionnements défectueux de l'enregistrement ou de la reproduction
G11B 20/12 - Mise en forme, p.ex. disposition du bloc de données ou de mots sur les supports d'enregistrement
G11B 20/18 - Détection ou correction d'erreurs; Tests
According to one embodiment, an antenna tuning IC includes a power level detection circuit, a signal level determination circuit, and a consumption current control circuit. The power level detection circuit detects a power level of an antenna line through which a high-frequency signal received by an antenna is transmitted. The signal level determination circuit determines a signal level detected by the power level detection circuit. The consumption current control circuit generates a switch gate control signal for controlling an ON/OFF operation of an RF switch circuitry, and reduces a first consumption current generated when the power level is a low input voltage more than a second consumption current generated when the power level is a high input voltage based on a determination result of the signal level determination circuit.
H01Q 3/24 - Dispositifs pour changer ou faire varier l'orientation ou la forme du diagramme de directivité des ondes rayonnées par une antenne ou un système d'antenne faisant varier l'orientation, par commutation de l'énergie fournie, d'un élément actif rayonnant à un autre, p.ex. pour commutation du lobe
A semiconductor device includes a semiconductor layer, first and second electrodes, a control electrode, and a connection region. The semiconductor layer includes first to third semiconductor regions. The connection region is positioned between the first electrode and the first semiconductor region. The connection region includes a compound of a first metallic element and Si, and a compound of Pt and Si. The first metallic element is at least one selected from the group consisting of Ti, V, Cr, Zr, Mo, Hf, Ta, and W. The connection region includes a first part adjacent to an n-type region of the semiconductor layer in a first direction. A peak position of a concentration distribution of the first metallic element in the first direction of the first part is between the n-type region and a peak position of a concentration distribution of Pt in the first direction of the first part.
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
According to one embodiment, a sensor includes an element portion including a first base and a first element. The first element includes, a first fixed member fixed to the first base, a first resistance connecting member supported by the first fixed member, a first conductive connecting member supported by the first fixed member, and a first film portion supported by the first resistance connecting member and the first conductive connecting member. A first gap is provided between the first base and the first film portion. The first film portion includes a first resistance layer and a first conductive layer. The first resistance connecting member includes a first resistance wiring electrically connected to the first resistance layer. The first conductive connecting member includes a first conductive wiring electrically connected to the first conductive layer.
G01N 27/12 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps solide dépendant de la réaction avec un fluide
G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
27.
MAGNETIC HEAD WITH MULTIPLE LAYERS AND MAGNETIC RECORDING DEVICE
According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a magnetic element provided between the first and the second magnetic poles. The magnetic element includes first to fifth magnetic layers, and first to sixth non-magnetic layers. The fifth magnetic layer includes a first element and at least one of Fe, Co or Ni. The first element includes at least one selected from the group consisting of Cr, V, Mn, Ti, N and Sc. The fifth non-magnetic layer includes at least one selected from the group consisting of Ru, Ir, Ta, Rh, Pd, Pt and W. The sixth non-magnetic layer includes at least one selected from the group consisting of Cu, Au, Cr, Al, V and Ag.
According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a magnetic element provided between the first and the second magnetic poles. The magnetic element includes first to fifth magnetic layers, and first to sixth non-magnetic layers. The sixth non-magnetic layer is provided between the fifth magnetic layer and the second magnetic pole. The sixth non-magnetic layer includes at least one selected from the group consisting of Ru, Ir, Ta, Rh, Pd, Pt and W.
According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a magnetic element provided between the first and the second magnetic poles. The magnetic element includes first to fifth magnetic layers, and first to sixth non-magnetic layers. The sixth non-magnetic layer is provided between the fifth magnetic layer and the second magnetic pole. The sixth non-magnetic layer includes at least one selected from the group consisting of Cu, Au, Cr, Al, V and Ag.
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Shiino, Keisuke
Shimotori, Soichiro
Mizuguchi, Koji
Abrégé
A cell degradation level calculation device for electrochemical cell stack according to an embodiment includes: a first calculation unit that calculates a first target voltage value based on first characteristics data; a second calculation unit that calculates a second target voltage value based on second characteristics data; and a third calculation unit that calculates a cell degradation level showing a degradation level of a cell based on the first target voltage value and the second target voltage value. The first target voltage value is the voltage value at which a voltage-value decrease rate reaches a first threshold value in a second time slot of the first characteristics data. The second target voltage value is the voltage value at which the voltage-value decrease rate reaches a second threshold value in a fourth time slot of the second characteristics data.
According to one embodiment, a sensor includes an element section including a first base and a first element. The first element includes a first fixed member fixed to the first base, a first connecting member supported by the first fixed member, and a first film portion supported by the first connecting member. A first gap is provided between the first base and the first film portion. The first film portion includes a first resistance layer, a first conductive layer, and a first conductive member provided between the first resistance layer and the first conductive layer. A potential of the first conductive member is fixed. A first electrical resistance of the first resistance layer is configured to change according to a state of a detection target around the first element.
G01N 27/04 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance
32.
KEY MANAGEMENT DEVICE, QUANTUM CRYPTOGRAPHY COMMUNICATION SYSTEM, KEY MANAGEMENT METHOD, AND COMPUTER PROGRAM PRODUCT
According to one embodiment, a key management device includes an acquiring circuitry and a processor. The acquiring circuitry is configured to: acquire identity verification data of a remote QKD key generated by a remote QKD device, and remote QKD device identification information identifying the remote QKD device, from another key management device via a classical communication channel. The processor is configured to: collect a local QKD key generated by a local QKD device and local QKD device identification information identifying the local QKD device; generate identity verification data of the local QKD key; and map, when the identity verification data of the remote QKD key matches the identity verification data of the local QKD key, the remote QKD device identification information to the local QKD device identification information.
A solid-state imaging device includes a semiconductor substrate that includes a first region in which a plurality of first photodiodes are arranged along a first direction, and a second region in which a plurality of second photodiodes are arranged along the first direction, and an insulating film that is disposed on the semiconductor substrate to cover the first region and the second region. The insulating film includes an optical path changing portion that changes an optical path of light incident on the insulating film on the first region and directed to the second region in at least an intermediate region between a first edge photodiode closest to the second region among the plurality of first photodiodes and a second edge photodiode closest to the first region among the plurality of second photodiodes.
A neural network device according to an embodiment includes a plurality of neuron circuits, a plurality of synapse circuits, and a plurality of random number circuits. Each of the random number circuits outputs a random signal. Each of the synapse circuits receives the random signal from one of the random number circuits and updates a synaptic weight with a probability generated on the basis of the received random signal. The synapse circuits are divided into synapse groups. Each of two or more synapse circuits belonging to a first synapse group receives the random signal output from a first random number circuit. Each of two or more synapse circuits outputting output signals to a first neuron circuit belongs to a synapse group differing from a synapse group, to which other synapse circuits outputting the output signal to the first neuron circuit, belong.
G06N 3/047 - Réseaux probabilistes ou stochastiques
G06N 3/049 - Réseaux neuronaux temporels, p.ex. éléments à retard, neurones oscillants ou entrées impulsionnelles
G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
A semiconductor device includes first and second electrodes, a first interconnect, a semiconductor layer, first and second control electrodes. The second electrode is disposed in an element region. The first interconnect is disposed in a first interconnect region. The semiconductor layer is provided between the first electrode and the second electrode and between the first electrode and the first interconnect. The semiconductor layer includes first to seventh semiconductor regions. The second semiconductor region is provided between the first electrode and the first semiconductor region. The first semiconductor region includes a first semiconductor portion disposed in the first interconnect region and a second semiconductor portion disposed in the element region. The seventh semiconductor region is disposed in the element region. The first control electrode is arranged with the first and second semiconductor regions. The second control electrode is arranged with the first, second and seventh semiconductor regions.
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
According to one embodiment, a sensor includes a fixed member, a movable member, a first counter electrode, a second counter electrode, a first resistance element, a second resistance element, and a control device. The control device includes a controller. The controller performs a first correction operation in a state where the movable member does not receive an external force. In the first correction operation, the controller causes the movable member to generate a first vibration. In the first correction operation, the controller derives a first correction value based on a first detection result of a first component and a second detection result of a second component. The first correction value includes at least one of a first resistance correction value, a second resistance correction value, a first voltage correction value, or a second voltage correction value such that the movable member vibrates along the first direction.
G01C 19/5712 - Dispositifs sensibles à la rotation utilisant des masses vibrantes, p.ex. capteurs vibratoires de vitesse angulaire basés sur les forces de Coriolis utilisant des masses entraînées dans un mouvement de rotation alternatif autour d'un axe les dispositifs comportant une structure micromécanique
According to one embodiment, a magnetic disk device comprises a control part configured to execute a cache control based on accompanying information included in a command wherein the command includes a data write command to a disk or a data read command from the disk.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G06F 12/0802 - Adressage d’un niveau de mémoire dans lequel l’accès aux données ou aux blocs de données désirés nécessite des moyens d’adressage associatif, p.ex. mémoires cache
38.
HEAT STORAGE POWER GENERATION SYSTEM AND POWER GENERATION CONTROL SYSTEM
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Watanabe, Hironori
Shimizu, Keiko
Nakagawa, Naoto
Shirakawa, Masakazu
Matsuzaki, Atsushi
Miki, Hiromutsu
Akebi, Toyohiro
Tawab, Taufiq Hilal
Mori, Takahiro
Fukamachi, Yusuke
Abe, Syuntaro
Iwaki, Chikako
Mawatari, Takashi
Abrégé
In one embodiment, a heat storage power generation system includes a heater to heat first fluid, and a heat storage to be heated by the first fluid, and heat second fluid with heat stored in the heat storage. The system further includes a generator to generate electric power by using the second fluid, and one or more first path switchers provided on a first path through which the first fluid is circulated between the heater and heat storage. The system further includes one or more second path switchers provided on a second path through which the second fluid is circulated between the heat storage and generator, one or more third path switchers provided on a third path through which at least one of the first and second fluids is circulated between the heater and generator, and a switching controller to control the first, second and third path switchers.
F28D 20/00 - Appareils ou ensembles fonctionnels d'accumulation de chaleur en général; Appareils échangeurs de chaleur de régénération non couverts par les groupes ou
F28D 20/02 - Appareils ou ensembles fonctionnels d'accumulation de chaleur en général; Appareils échangeurs de chaleur de régénération non couverts par les groupes ou utilisant la chaleur latente
39.
GRANULATED PARTICLE FOR COLD STORAGE MATERIAL PARTICLE, COLD STORAGE MATERIAL PARTICLE, COLD STORAGE DEVICE, REFRIGERATOR, CRYOPUMP, SUPERCONDUCTING MAGNET, NUCLEAR MAGNETIC RESONANCE IMAGING APPARATUS, NUCLEAR MAGNETIC RESONANCE APPARATUS, MAGNETIC FIELD APPLICATION TYPE SINGLE CRYSTAL PULLING APPARATUS, AND HELIUM RE-CONDENSING DEVICE
A granulated particle for cold storage material particle according to an embodiment includes: a rare earth oxysulfide containing at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, or a rare earth oxide containing at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; and carbon having a concentration of 0.001 wt % or more and 50 wt % or less, in which the granulated particle has a relative density of 10% or more and 50% or less.
C09K 5/14 - Substances solides, p.ex. pulvérulentes ou granuleuses
A61B 5/055 - Détection, mesure ou enregistrement pour établir un diagnostic au moyen de courants électriques ou de champs magnétiques; Mesure utilisant des micro-ondes ou des ondes radio faisant intervenir la résonance magnétique nucléaire [RMN] ou électronique [RME], p.ex. formation d'images par résonance magnétique
F28D 20/00 - Appareils ou ensembles fonctionnels d'accumulation de chaleur en général; Appareils échangeurs de chaleur de régénération non couverts par les groupes ou
G01R 33/38 - Systèmes pour produire, homogénéiser ou stabiliser le champ magnétique directeur ou le champ magnétique à gradient
A semiconductor device includes first and second electrodes, first to fourth semiconductor regions, first and second control electrodes, and first and second electrode pads. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The fourth semiconductor region is located on a portion of the third semiconductor region. The first control electrode faces the second, third, and fourth semiconductor regions via a first insulating film. The second control electrode faces the second and third semiconductor regions via a second insulating film. The first electrode pad is electrically connected with the first control electrode. The second electrode pad is electrically connected with the second control electrode. The second electrode pad has a different planar shape from the first electrode pad.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
A semiconductor device includes a semiconductor layer including an element region, and a termination region; a first electrode; a second electrode; a semi-insulating film located on the termination region; an insulating film located between the semiconductor layer and the semi-insulating film; and a protective film located on the semi-insulating film. The insulating film includes an inner perimeter portion, the inner perimeter portion being located between an end portion of the first electrode positioned at the termination region side and an end portion of the second semiconductor part positioned at the termination region side, an outer perimeter portion located between the second electrode and the semiconductor layer, and an intermediate portion located between the inner perimeter portion and the outer perimeter portion. A thickness of the intermediate portion is less than a thickness of the inner perimeter portion and a thickness of the outer perimeter portion.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
According to one embodiment, a semiconductor device includes a first transistor, a first circuit, and a second circuit. A source of the first transistor is coupled to a first terminal. A gate of the first transistor is coupled to a first node. The first circuit includes a first comparator and a current limiting circuit. The second circuit includes a second comparator, a second transistor, a third transistor, and a third circuit. A source of the second transistor is grounded. A drain of the second transistor is coupled to the first node. The third circuit is configured to turn on the second transistor and the third transistor for a first time period based on an output of the second comparator.
H02H 3/20 - Circuits de protection de sécurité pour déconnexion automatique due directement à un changement indésirable des conditions électriques normales de travail avec ou sans reconnexion sensibles à un excès de tension
H02H 1/00 - CIRCUITS DE PROTECTION DE SÉCURITÉ - Détails de circuits de protection de sécurité
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORP. (Japon)
Inventeur(s)
Nakamura, Shingo
Fujii, Hideki
Abrégé
According to an embodiment, in an air-cooled cooling structure that cools the heating element with air, the air-cooled cooling structure includes a support member that supports the heating element on the inner face and an air guide portion. The air guide portion generates a spiral air flow with the extension direction of the support member as an axis. Furthermore, the air guide portion may include a fan that forcibly generates the air flow.
According to one embodiment, an emotion estimation apparatus includes processing circuitry. The processing circuitry is configured to acquire medium data of a target user in which a medium of the target user is recorded, extract medium features from the medium data of the target user, calculate an emotion feature based on the extracted medium features and an emotion feature extraction model denoting a reference for the medium features of the target user, and estimate an emotion of the target user based on the calculated emotion feature.
G10L 25/63 - Techniques d'analyses de la parole ou de la voix qui ne se limitent pas à un seul des groupes spécialement adaptées pour un usage particulier pour comparaison ou différentiation pour estimer un état émotionnel
G10L 15/02 - Extraction de caractéristiques pour la reconnaissance de la parole; Sélection d'unités de reconnaissance
According to one embodiment, an encoder includes a first element part and a controller. The first element part includes a first qubit, a second qubit couplable with the first qubit, a third qubit couplable with the second qubit, a fourth qubit couplable with the third qubit, a fifth qubit couplable with the fourth qubit, a sixth qubit couplable with the fifth qubit, a seventh qubit couplable with the sixth qubit, an eighth qubit couplable with the seventh qubit, and a ninth qubit couplable with the eighth qubit. The controller is configured to perform a first control. The first control includes encoding a surface code having a code distance of 3.
G06N 10/40 - Réalisations ou architectures physiques de processeurs ou de composants quantiques pour la manipulation de qubits, p.ex. couplage ou commande de qubit
H03M 13/31 - Codage, décodage ou conversion de code pour détecter ou corriger des erreurs; Hypothèses de base sur la théorie du codage; Limites de codage; Méthodes d'évaluation de la probabilité d'erreur; Modèles de canaux; Simulation ou test des codes combinant le codage pour la détection ou pour la correction d'erreurs avec une utilisation efficace du spectre
46.
SECONDARY BATTERY, BATTERY PACK, VEHICLE, AND STATIONARY POWER SUPPLY
According to one embodiment, a secondary battery provided with a negative electrode including a negative electrode active material-containing layer, a positive electrode including a positive electrode active material-containing layer, a separator located between the negative electrode and the positive electrode, and an aqueous electrolyte is provided. The separator includes a composite layer containing inorganic solid particles and a polymeric material. A particle size distribution of the inorganic solid particles in the composite layer has at least two peaks. A frequency FPS of a peak top PS of a peak on a smallest particle diameter side and a frequency FPL of a peak top PL of a peak on a largest particle diameter side in the particle size distribution have a relationship of 0.9≤FPS/FPL≤5. A porosity of the composite layer is less than both of a porosity of the negative electrode active material-containing layer and a porosity of the positive electrode active material-containing layer, and is 1% or more and less than 15%.
H01M 50/451 - Séparateurs, membranes ou diaphragmes caractérisés par le matériau ayant une structure en couches comprenant des couches de matériau organique uniquement et des couches comprenant un matériau inorganique
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
According to one embodiment, a training method computes a first feature map and a first attention map from a first image, and computes a second feature map and a second attention map from a second image, by inputting the first image, which does not include a defective area of a target, and the second image, which includes the defective area of the target, to a machine learning model. The training method computes a first loss, based on the first attention map. The training method computes a class classification of the target, based on the second feature map and the second attention map. The training method computes a second loss, based on the class classification. The training method computes a total loss, based on the first loss and the second loss. The training method updates a parameter of the machine learning model so as to minimize the total loss.
G06V 10/771 - Sélection de caractéristiques, p.ex. sélection des caractéristiques représentatives à partir d’un espace multidimensionnel de caractéristiques
G06V 10/764 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant la classification, p.ex. des objets vidéo
48.
LEARNING SYSTEM, METHOD AND NON-TRANSITORY COMPUTER READABLE MEDIUM
According to one embodiment, a learning system includes a plurality of local devices and a server. The plurality of local devices each includes processing circuitry configured to determine a federated local training condition indicating a training condition in federated learning of a local model based on preliminary local training information including a preliminary local training condition and a preliminary local training result in a case where a model is preliminarily trained using local data. The server includes processing circuitry configured to determine a global training condition of a global model based on the preliminary local training information.
An anomaly detection device according to an embodiment includes a parameter set storage unit, a detection unit, an information input unit, and a processing unit. The parameter set storage unit stores a plurality of parameter sets used for detecting an anomaly in at least one piece of target data. The detection unit detects an anomaly in the at least one piece of target data using at least one parameter set selected from the parameter sets, and acquires at least one detection result. The information input unit receives an input of teaching information corresponding to the at least one detection result. The processing unit performs at least one of update, addition, and deletion of the parameter set based on the teaching information.
According to one embodiment, a carbon dioxide adsorbent is provided. The carbon dioxide adsorbent is capable of adsorbing and desorbing carbon dioxide and includes one or more cyclic disulfide structures.
B01J 20/22 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation contenant une substance organique
B01D 53/02 - SÉPARATION Épuration chimique ou biologique des gaz résiduaires, p.ex. gaz d'échappement des moteurs à combustion, fumées, vapeurs, gaz de combustion ou aérosols par adsorption, p.ex. chromatographie préparatoire en phase gazeuse
According to one embodiment, an image encoding method includes selecting a motion reference block from an already-encoded pixel block. The method includes selecting an available block including different motion information from the motion reference block, and selecting a selection block from the available block. The method includes generating a predicted image of the encoding target block using motion information of the selection block. The method includes encoding a prediction error between the predicted image and an original image. The method includes encoding selection information identifying the selection block by referring to a code table decided according to a number of the available block.
H04N 19/105 - Sélection de l’unité de référence pour la prédiction dans un mode de codage ou de prédiction choisi, p.ex. choix adaptatif de la position et du nombre de pixels utilisés pour la prédiction
H04N 19/109 - Sélection du mode de codage ou du mode de prédiction parmi plusieurs modes de codage prédictif temporel
H04N 19/119 - Aspects de subdivision adaptative, p.ex. subdivision d’une image en blocs de codage rectangulaires ou non
H04N 19/137 - Mouvement dans une unité de codage, p.ex. différence moyenne de champs, de trames ou de blocs
H04N 19/139 - Analyse des vecteurs de mouvement, p.ex. leur amplitude, leur direction, leur variance ou leur précision
H04N 19/15 - Débit ou quantité de données codées à la sortie du codeur par contrôle de la taille réelle des données compressées au niveau de la mémoire avant de décider du stockage dans la mémoire tampon de transmission
H04N 19/159 - Type de prédiction, p.ex. prédiction intra-trame, inter-trame ou de trame bidirectionnelle
H04N 19/176 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant le codage adaptatif caractérisés par l’unité de codage, c. à d. la partie structurelle ou sémantique du signal vidéo étant l’objet ou le sujet du codage adaptatif l’unité étant une zone de l'image, p.ex. un objet la zone étant un bloc, p.ex. un macrobloc
H04N 19/182 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant le codage adaptatif caractérisés par l’unité de codage, c. à d. la partie structurelle ou sémantique du signal vidéo étant l’objet ou le sujet du codage adaptatif l’unité étant un pixel
H04N 19/52 - Traitement de vecteurs de mouvement par encodage par encodage prédictif
H04N 19/61 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant un codage par transformée combiné avec un codage prédictif
H04N 19/70 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques caractérisés par des aspects de syntaxe liés au codage vidéo, p.ex. liés aux standards de compression
H04N 19/96 - Codage au moyen d'une arborescence, p.ex. codage au moyen d'une arborescence quadratique
According to one embodiment, a control circuit includes a capacitive element connected between an output terminal of an output-switching transistor circuit and a control electrode, and a charge circuit charges the capacitive element when the ON/OFF switching signal is switched from an OFF command to an ON command, delay improvement circuit shortens a delay time from OFF to ON of the transistor circuit by setting the ON/OFF control voltage of the transistor circuit to the first switching threshold in conjunction with the operation of the charge circuit.
H03K 17/0412 - Modifications pour accélérer la commutation sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
H03K 19/0185 - Dispositions pour le couplage; Dispositions pour l'interface utilisant uniquement des transistors à effet de champ
A measurement method includes determining a first relationship by measuring a reverse recovery charge of a semiconductor element at a plurality of conditions of a measurement device. The measurement device has mutually-different parasitic inductances at the plurality of conditions. The semiconductor element includes a diode component. The first relationship is between the parasitic inductance and a measured value of the reverse recovery charge. The method includes estimating a true value of the reverse recovery charge when the parasitic inductance is zero based on the first relationship.
According to one embodiment, an information processing apparatus includes a processor configured to acquire information indicating a position of an antenna that radiates a control signal for controlling a moving vehicle using a radio wave, information indicating a position of an object in a space, and information indicating radio wave transmittance of the object, the radio wave transmittance indicating a degree of transmission of the radio wave through the object, and to evaluate a propagation environment of the radio wave in the space based on the information indicating the position of the antenna, the information indicating the position of the object, and the information indicating the radio wave transmittance of the object.
G05D 1/02 - Commande de la position ou du cap par référence à un système à deux dimensions
G01S 13/931 - Radar ou systèmes analogues, spécialement adaptés pour des applications spécifiques pour prévenir les collisions de véhicules terrestres
H04W 4/44 - Services spécialement adaptés à des environnements, à des situations ou à des fins spécifiques pour les véhicules, p.ex. communication véhicule-piétons pour la communication entre véhicules et infrastructures, p.ex. véhicule à nuage ou véhicule à domicile
55.
ELECTRONIC CIRCUITRY, METHOD, COMPUTER PROGRAM, AND ELECTRONIC SYSTEM
An electronic circuitry includes: a comparison circuit to detect a first voltage at a first node relating to a first end of a semiconductor switching element and output a first signal in response to the first voltage larger than a predetermined voltage or equal to; a first filter including a first switch between the first node and a second end of the element, the first filter turning on the first switch for a first time based on a control signal indicating conduction of the element; and a second filter to, in response to the first signal output for at least a second time, generate a second signal indicating an overcurrent of the element, wherein the electronic circuitry changes at least one of: a first waveform related to driving of the semiconductor switching element based on the control signal; the second time; the first time; or the predetermined voltage.
H02H 7/122 - Circuits de protection de sécurité spécialement adaptés pour des machines ou appareils électriques de types particuliers ou pour la protection sectionnelle de systèmes de câble ou ligne, et effectuant une commutation automatique dans le cas d'un chan pour redresseurs pour convertisseurs ou redresseurs statiques pour onduleurs, c. à d. convertisseurs de courant continu en courant alternatif
H02H 1/00 - CIRCUITS DE PROTECTION DE SÉCURITÉ - Détails de circuits de protection de sécurité
56.
CHEMICAL SENSOR, REAGENT, AND METHOD FOR DETECTING BENZOIC ACID AND BENZOIC ACID DERIVATIVE
A chemical sensor includes a sensor element; a first electrode electrically connected to the sensor element; a second electrode electrically connected to the sensor element; an aptamer located on a surface of the sensor element; a solution covering the surface of the sensor element and the aptamer; and a tropane derivative having a tropane skeleton and contained in the solution.
According to one embodiment, a troubleshooting support apparatus includes processing circuitry. The processing circuitry acquires multiple pieces of document data which describe content of a problem relating to multiple articles or services. The processing circuitry extracts, from the multiple pieces of document data, multiple first keywords relating to the multiple articles or services together with attribute information. The processing circuitry records the multiple first keywords in a memory for the respective pieces of attribute information. The processing circuitry determines, based on a rate of occurrence of each of multiple second keywords relating to predetermined attribute information among the first keywords recorded in the memory, a display manner of first data relating to each of the multiple second keywords.
G06Q 30/016 - Fourniture d’une assistance aux clients, p. ex pour assister un client dans un lieu commercial ou par un service d’assistance après-vente
According to one embodiment, a processing device includes a processor. The processor is configured to acquire first radar echoes from a plurality of first antennas, generate a first radar image by calculating a spatial correlation between the first radar echoes represented by complex numbers, acquire second radar echoes from a plurality of second antennas, generate a second radar image by calculating a spatial correlation between the second radar echoes represented by complex numbers, and generate a third radar image by applying at least one of a first synthesis method by synthesis of pixel values represented by complex numbers or a second synthesis method by image synthesis to the generated first and second radar images.
G01S 13/90 - Radar ou systèmes analogues, spécialement adaptés pour des applications spécifiques pour la cartographie ou la représentation utilisant des techniques d'antenne synthétique
A semiconductor device includes first to third conductive portions, a first insulating portion, and a semiconductor portion. The semiconductor portion includes a first semiconductor region provided between the first conductive portion and the second conductive portion, and a second semiconductor region provided between the second conductive portion and the first insulating region. The second conductive portion includes a first conductive region in Schottky junction with the first semiconductor region, and a second conductive region in Schottky junction with the second semiconductor region. When the first conductivity-type is an n-type, a work function of the first conductive region is smaller than a work function of the second conductive region. When the first conductivity-type is a p-type, the work function of the first conductive region is larger than the work function of the second conductive region.
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
According to one embodiment, a communication control device included in a first communication device is provided. The communication control device includes an acquisition unit, a first processing unit, a request unit and a first memory unit. The acquisition unit acquires data transmitted from the first communication device to a second communication device or data transmitted from the second communication device to the first communication device. The first processing unit performs an encryption process or a decryption process on the data by using key data in a case where the data belongs to a flow. The request unit requests transfer of key data for each flow via an internal bus. The first memory unit stores the key data transferred in response to the request.
G06F 21/79 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du stockage de données dans les supports de stockage à semi-conducteurs, p.ex. les mémoires adressables directement
G06F 21/82 - Protection des dispositifs de saisie, d’affichage de données ou d’interconnexion
61.
INFORMATION PROCESSING APPARATUS, SYSTEM, MOBILE OBJECT, METHOD AND STORAGE MEDIUM
According to one embodiment, an information processing apparatus includes a first processing circuit. The first processing circuit is configured to specify a first route along which a first mobile object is moving in a case where a state signal regarding a state of the first mobile object moving based on a first control signal regarding movement of the first mobile object is not received, specify a second mobile object different from the first mobile object based on the specified first route, and generate a second control signal regarding movement of the specified second mobile object.
According to one embodiment, a control system includes first and second control devices. The first control device includes a management unit that manages global time, a first generation unit that generates local time, a control unit that controls an operation of the first control device based on the global time, the local time, and operation control information, and a second generation unit that generates time error information based on the global time and the local time. The second control device includes an acquisition unit that acquires the time error information, and a correction unit that corrects the operation control information based on the time error information.
A semiconductor device of embodiments includes: a transistor region including a semiconductor layer having a first face and a second face opposite to the first face, a first transistor having a first gate electrode provided on a first face side of the semiconductor layer, and a second transistor having a second gate electrode provided on a second face side of the semiconductor layer; and an adjacent region adjacent to the transistor region and including the semiconductor layer and a third transistor having a third gate electrode electrically connected to the second gate electrode and provided on the second face side of the semiconductor layer and the third transistor having an absolute value of a threshold voltage smaller than an absolute value of a threshold voltage of the second transistor.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0≤x1<1). The second semiconductor region includes Alx2Ga1-x2N (0
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 29/66 - Types de dispositifs semi-conducteurs
65.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING METHOD, AND COMPUTER PROGRAM PRODUCT
An information processing device according to an embodiment includes a risky vulnerability detection unit, a technical similarity calculation unit, a risk score calculation unit, and an output unit. The risky vulnerability detection unit detects, as a risky vulnerability, a vulnerability having the possibility of being attacked for an object system executing information processing. For each vulnerability registered in advance, the technical similarity calculation unit calculates a technical similarity representing a technical similarity to the risky vulnerability. For each vulnerability, the risk score calculation unit calculates a risk score representing the level of the risk of attack on each vulnerability in the object system, based on the technical similarity. The output unit determines at least one of the vulnerabilities as a target vulnerability to be dealt with, based on the risk score for each vulnerability, and outputs identification information for identifying the target vulnerability.
G06F 21/57 - Certification ou préservation de plates-formes informatiques fiables, p.ex. démarrages ou arrêts sécurisés, suivis de version, contrôles de logiciel système, mises à jour sécurisées ou évaluation de vulnérabilité
66.
INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND STORAGE MEDIUM
According to one embodiment, an information processing apparatus includes a processor. The processor modifies graph data to generate two pieces of new graph data. The processor extracts, by an extraction model, features of respective nodes in the graph data. The processor calculates a contrastive loss by using similarity between the extracted features. The processor calculates a structural loss by using between the extracted features. The processor updates the extraction model using the contrastive loss and the structural loss.
G06Q 50/00 - Systèmes ou procédés spécialement adaptés à un secteur particulier d’activité économique, p.ex. aux services d’utilité publique ou au tourisme
An axial fan includes: an impeller including a rotating part, and a blade part connected to the rotating part; a bellmouth including a flat part orthogonal to an extension direction of a rotation axis of the rotating part; a rising part rising from the flat part; and an opening along which the rising part extends, the impeller being located in the opening, the rising part surrounding the impeller, the bellmouth including a plurality of grooves located at a surface of the bellmouth, the surface of the bellmouth being connected to an inner surface of the rising part, the inner surface of the rising part facing the blade part of the impeller, the plurality of grooves being located in at least a corner portion connecting the flat part and the rising part, the plurality of grooves extending in a direction crossing the flat part.
A driver circuitry includes first-fifth inverters which have lower withstand voltage, and first-sixth transistors which have higher withstand voltage. In the first transistor, a first voltage is applied to a first end, and a second end is connected to the high withstand voltage element. The second transistor is connected to the first transistor. The second inverter is connected to the first inverter and the first transistor. The third inverter is connected to the first inverter. The third transistor is connected to the second inverter. The fourth transistor is connected to the third transistor. The fifth transistor is connected to the third inverter. The sixth transistor is connected to the fifth transistor. The fourth inverter is connected to the sixth transistor and the second transistor. The fifth inverter is connected to the fourth transistor, the fourth inverter, and the fourth inverter.
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
H03K 17/0412 - Modifications pour accélérer la commutation sans réaction du circuit de sortie vers le circuit de commande par des dispositions prises dans le circuit de commande
H03K 19/0185 - Dispositions pour le couplage; Dispositions pour l'interface utilisant uniquement des transistors à effet de champ
H03K 19/0948 - Circuits logiques, c. à d. ayant au moins deux entrées agissant sur une sortie; Circuits d'inversion utilisant des éléments spécifiés utilisant des dispositifs à semi-conducteurs utilisant des transistors à effet de champ utilisant des transistors MOSFET utilisant des dispositifs CMOS
69.
ABNORMAL NOISE DETECTION DEVICE, ELEVATOR DEVICE, METHOD, AND STORAGE MEDIUM
According to one embodiment, an abnormal noise detection device includes a first processing circuit. The first processing circuit is configured to collect an operating noise of a moving body by a first microphone installed in the moving body; detect an abnormal noise in the operating noise; input position information of the moving body; and store history information in which a detection result of detecting the abnormal noise and the position information are associated with each other in a first memory. The first processing circuit is configured to determine presence or absence of abnormality of the moving body by integrating the detection result for each piece of the position information on a basis of the history information.
B66B 5/00 - Utilisation de dispositifs de vérification, de rectification, de mauvais fonctionnement ou de sécurité des ascenseurs
B66B 1/34 - Systèmes de commande des ascenseurs en général - Détails
B66B 3/00 - Utilisation de dispositifs pour indiquer ou signaler les conditions du fonctionnement des ascenseurs
H04R 1/02 - Boîtiers; Meubles; Montages à l'intérieur de ceux-ci
H04R 1/40 - Dispositions pour obtenir la fréquence désirée ou les caractéristiques directionnelles pour obtenir la caractéristique directionnelle désirée uniquement en combinant plusieurs transducteurs identiques
According to one embodiment, an information processing apparatus includes a processor configured to acquire first reception power of a first signal radiated from an antenna when the first signal is received at a first point, acquire second reception power of a second signal radiated from the antenna, the second signal being different from the first signal, when the second signal is received at a second point, and determine, based on a difference between periodicity of the acquired first reception power and periodicity of the acquired second reception power, presence or absence of an object in a space facing the antenna with the second point interposed between the antenna and the space.
G01V 3/12 - Prospection ou détection électrique ou magnétique; Mesure des caractéristiques du champ magnétique de la terre, p.ex. de la déclinaison ou de la déviation fonctionnant par ondes électromagnétiques
According to one embodiment, a sensing system includes a reflective optical element, and an optical device. The reflective optical element includes a plurality of optical structures arranged along a first plane. The optical device includes an element face. The optical device is configured to perform a first operation and a second operation. The optical device is configured to emit infrared rays from the element face in the first operation. The optical device is configured to detect the infrared rays reflected by the reflective optical element and incident on the element face in the second operation.
G01N 21/3504 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse des gaz, p.ex. analyse de mélanges de gaz
G02B 1/00 - OPTIQUE ÉLÉMENTS, SYSTÈMES OU APPAREILS OPTIQUES Éléments optiques caractérisés par la substance dont ils sont faits; Revêtements optiques pour éléments optiques
G02B 17/00 - Systèmes avec surfaces réfléchissantes, avec ou sans éléments de réfraction
H01S 5/34 - Structure ou forme de la région active; Matériaux pour la région active comprenant des structures à puits quantiques ou à superréseaux, p.ex. lasers à puits quantique unique [SQW], lasers à plusieurs puits quantiques [MQW] ou lasers à hétérostructure de confinement séparée ayant un indice progressif [GRINSCH]
72.
WIRELESS COMMUNICATION APPARATUS, AUTHENTICATION APPARATUS, WIRELESS COMMUNICATION METHOD AND AUTHENTICATION METHOD
According to one embodiment, when a control unit is notified of information in at least one second signal received by one of first and second wireless communication units after the control unit provides the second wireless communication unit with a command to transmit a first signal containing first address information and before a waiting time elapses and when the at least one second signal contains second address information assigned to an authentication apparatus having received the first signal, then the control unit provides the first wireless communication unit with a command to transmit a third signal for a connection request with the second address information set in a destination address.
G07C 9/27 - Enregistrement de l’entrée ou de la sortie d'une entité isolée comportant l’utilisation d’un laissez-passer une station centrale gérant l’enregistrement
G07C 9/20 - Enregistrement de l’entrée ou de la sortie d'une entité isolée comportant l’utilisation d’un laissez-passer
H04L 5/00 - Dispositions destinées à permettre l'usage multiple de la voie de transmission
The RNN training apparatus includes a storage and processing circuitry. The storage stores a hidden state of an RNN for the N sequences. The processing circuitry selects M (M
According to one embodiment, a semiconductor device includes a base, a first silicon carbide region, and a second silicon carbide region. The first silicon carbide region includes at least one selected from the group consisting of nitrogen, phosphorus and arsenic. The second silicon carbide region includes at least one selected from the group consisting of boron, aluminum and gallium. The first silicon carbide region is provided between the base and the second silicon carbide region. At least a part of the first silicon carbide region includes fluorine.
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
According to one embodiment, a sound absorption apparatus includes a front plate, a back plate, a diaphragm, a supporting member, a second frame, and a third frame. The front plate has a sound hole. The back plate faces the front plate. The diaphragm is provided between the front plate and the back plate. The supporting member supports the diaphragm. The supporting member includes a first frame attached to the diaphragm, a first member located inside the first frame and attached to the diaphragm, and a connecting member connecting the first frame and the first member. The second frame forms a first space between the front plate and the diaphragm. The third frame forms a second space between the back plate and the diaphragm.
G10K 11/172 - Procédés ou dispositifs de protection contre le bruit ou les autres ondes acoustiques ou pour amortir ceux-ci, en général utilisant des effets de résonance
A semiconductor device includes a semiconductor layer, an insulating film, a first conductive portion, and a second conductive portion. The first conductive portion is provided in the semiconductor layer. The insulating film is provided in the semiconductor layer. The insulating film is provided between the semiconductor layer and the first conductive portion. The second conductive portion is provided in the semiconductor layer. The second conductive portion is disposed such that the first conductive portion is located between the second conductive portion and the insulating film. The second conductive portion is electrically connected to the first conductive portion. The second conductive portion has residual stress with force components in directions opposite to directions of force components of residual stress of the first conductive portion.
According to one embodiment, a solar module system includes: a support member that has a principal surface; a solar module arranged on the principal surface; a first terminal arranged on the support member and electrically connected with an electrode of the solar module; a frame member configured to hold the support member such that the solar module opposes to a transparent member; and a second terminal arranged on the frame member and electrically connected with the first terminal of the support member being held by the frame member.
An information processing apparatus includes processing circuitry configured to specify a first consent record that includes an identifier for a first business operator, which identifies the related party and which is assigned exclusively to the first business operator, and consent of the related party allowing the first business operator to execute a first handling of the data of the related party, and detect a related party identifier corresponding to the identifier for the first business operator included in the first consent record; and searching circuitry configured to search the first storage system for a second consent record that includes consent of the related party allowing a second business operator to execute a second handling of the data, wherein the processing circuitry is configured to generate an audit record including a record identifier that identifies the first consent record and information regarding the presence or absence of the second consent record.
A magnetic component of an embodiment has a resin-made hollow container that houses a doughnut-shaped magnetic core, and the resin forming the hollow container exhibits a white color to gray color having a chromatic value C of 0 (achromatic) to 2 and a lightness V or 8 or higher as defined by JIS Z8721 “Color specification—Specification according to their three attributes”. The hollow container has an inner wall portion formed to form a hollow portion, an outer wall portion formed to surround the inner wall portion, and a bottom portion provided at one end of each of the inner wall portion and the outer wall portion to close a space between the inner wall portion and the outer wall portion, and houses the doughnut-shaped magnetic core between the inner wall portion and the outer wall portion.
According to one embodiment, a signal processing circuit includes a first voltage setting circuit that sets a reference voltage on an input side of an isolator, a variable gain amplifier circuit that amplifies an output signal of the isolator, a DC offset adjustment circuit that adjusts an offset of the variable gain amplifier circuit, a second voltage setting circuit that sets a reference voltage on an output side of the isolator, and a control circuit that controls the DC offset adjustment circuit in response to a result of comparison of an output voltage of the variable gain amplifier circuit with an output voltage of the second voltage setting circuit.
H03G 3/30 - Commande automatique dans des amplificateurs comportant des dispositifs semi-conducteurs
H03K 5/24 - Circuits présentant plusieurs entrées et une sortie pour comparer des impulsions ou des trains d'impulsions entre eux en ce qui concerne certaines caractéristiques du signal d'entrée, p.ex. la pente, l'intégrale la caractéristique étant l'amplitude
81.
INDOOR POSITION INFORMATION STORAGE PROCESSING SYSTEM, INDOOR POSITION INFORMATION DETECTION SYSTEM, ELECTRIC POWER APPARATUS, INDOOR POSITION INFORMATION PROCESSING DEVICE, INDOOR POSITION INFORMATION PROCESSING METHOD, AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM
An indoor position information storage processing system of an embodiment includes an electric power apparatus, a first transmitter, a first receiver, a position detector, and a first information processing device. The first information processing device processes information based on the distance-measurement waves and a position of the first receiver. The first distance calculation unit calculates a distance between the first transmitter and the first receiver on the basis of distance-measurement waves received by the first receiver. The first position calculation unit calculates a position of the first transmitter on the basis of the calculated distance and a position of the first receiver. The first storage processing unit stores the calculated position of the first transmitter in a storage unit as a position of the electric power apparatus.
G01S 5/14 - Localisation par coordination de plusieurs déterminations de direction ou de ligne de position; Localisation par coordination de plusieurs déterminations de distance utilisant les ondes radioélectriques déterminant des distances absolues à partir de plusieurs points espacés d'emplacement connu
According to one embodiment, a magnetic head includes first to fourth shields, first to fourth terminals, and first magnetic member. The third shield includes a first partial region and a second partial region. The fourth shield includes a third partial region and a fourth partial region. The first magnetic member is provided between a portion of the first shield and a portion of the second shield in a first direction from the first shield to the second shield. The first magnetic member is provided between the first partial region and the third partial region in a second direction crossing the first direction. The portion of the first shield is located between the second partial region and the fourth partial region in the second direction.
In a device, a first transistor has a gate connected to an input. A first resistance is connected between one end of the first transistor and a first power supply line. A second resistance is connected between the other end of the first transistor and the second power supply line. A second transistor has a gate connected to a first node between the first transistor and the first resistance, and one end thereof is connected to the first power supply line. A current source is connected to the other end of the second transistor and the second power supply line. An inverter circuit has an input part connected to a second node between the second transistor and the current source, has an output part connected to an output, and outputs a voltage on any of the first power supply line or the second power supply line from the output.
H03K 3/012 - Modifications du générateur pour améliorer le temps de réponse ou pour diminuer la consommation d'énergie
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
85.
LASER CLEANING METHOD, LASER PROCESSING APPARATUS, AND LASER PROCESSING SYSTEM
A laser cleaning process for removing a foreign matter from a processing portion of a base material includes: determining that the foreign matter is on the processing portion; determining a state of the foreign matter; determining whether the foreign matter can be removed from the processing portion; and removing from the processing portion the foreign matter that has been determined to be removable from the processing portion.
B08B 7/00 - Nettoyage par des procédés non prévus dans une seule autre sous-classe ou un seul groupe de la présente sous-classe
B23K 26/03 - Observation, p.ex. surveillance de la pièce à travailler
B23K 26/064 - Mise en forme du faisceau laser, p.ex. à l’aide de masques ou de foyers multiples au moyen d'éléments optiques, p.ex lentilles, miroirs ou prismes
86.
COMPUTER PROGRAM PRODUCT, INFORMATION PROCESSING APPARATUS, AND INFORMATION PROCESSING METHOD
A computer program product includes a computer-readable recording medium on which programmed instructions causing a computer to perform the following processing are recorded. The computer specifies a reference coordinate system of a three-dimensional position. The computer detects, from an image data, an area in which a designated target object is included. The computer extracts, from three-dimensional point cloud data, extraction point cloud data representing a three-dimensional position of an object in a target area. The computer generates target object information. A shape and an orientation of a first portion of the designated target object are defined. The orientation is defined for one of coordinate axes in the reference coordinate system. The computer generates the target object information by fitting the target object model to the extraction point cloud data under a condition that an orientation of the target object model matches an orientation defined for the first portion.
According to an embodiment, a magnetic disk device includes: a magnetic disk; an arm; a support member provided at a distal end of the arm; a magnetic head provided on the support member and configured to access the magnetic disk; a first actuator configured to rotate the arm; a second actuator configured to drive the support member; and one or more processors configured to implement a controller configured to perform seek control of the magnetic head. The controller includes: a feedback controller configured to control a first command value for driving the first actuator so as to reduce an error between a position of the magnetic head and a target position; and an iterative learning controller configured to receive an input value based on the error and output a second command value for driving the second actuator by iterative learning.
G11B 5/48 - Disposition ou montage des têtes par rapport aux supports d'enregistrement
G11B 5/56 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de régler la position relative de la tête et du support d'enregistrement, p.ex. réglage manuel pour la correction d'azimuth ou pour le centrage de la piste
An analysis method may determine the presence of affection of at least any one of breast cancer, pancreatic cancer, lung cancer, gastric cancer, and colorectal cancer. The analysis method may include quantifying at least any one of hsa-miR-205-5p, hsa-miR-30e-5p, hsa-miR-106b-5p, hsa-miR-3613-5p, hsa-miR-483-5p, hsa-miR-574-3p, hsa-miR-125b-5p, hsa-miR-223-5p, hsa-miR-3613-3p, hsa-miR-941, hsa-miR-324-3p, hsa-miR-193a-5p, hsa-miR-4433a-3p, hsa-miR-29c-3p, hsa-miR-190a-5p, hsa-miR-885-5p, hsa-miR-194-5p, hsa-miR-29a-3p, hsa-miR-142-5p, hsa-miR-142-3p, hsa-miR-122-5p, hsa-miR-34a-5p, and hsa-miR-375-3p in a sample derived from an object.
C12Q 1/6886 - Produits d’acides nucléiques utilisés dans l’analyse d’acides nucléiques, p.ex. amorces ou sondes pour les maladies provoquées par des altérations du matériel génétique pour le cancer
A ceramic copper circuit board according to an embodiment includes a ceramic substrate, and a copper circuit part bonded to at least one surface of the ceramic substrate via a brazing material layer. The brazing material layer includes one or two selected from Cu, Ti, Sn, or In. The brazing material layer includes a bonding part located between the ceramic substrate and the copper circuit part, and a first jutting part located at a periphery of the bonding part; and a titanium content of the first jutting part is within a range of not less than 70 mass % and not more than 100 mass %. It is favorable for the total of the titanium content and the nitrogen content of the first jutting part to be not less than 99 mass % and not more than 100 mass %.
H05K 3/02 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué à la surface du support isolant et est ensuite enlevé de zones déterminées de la surface, non destinées à servir de conducteurs de courant ou d'éléments de blindage
A semiconductor device of embodiments includes: a semiconductor layer having a first face and a second face opposite to the first face and including a first trench, a second trench, and a third trench provided on a first face side; a first gate electrode in the first trench; a second gate electrode in the second trench; a third gate electrode in the third trench; a fourth gate electrode and a fifth gate electrode provided on a second face side; a first electrode contacting the first face; a second electrode contacting the second face; a first electrode pad electrically connected to the first gate electrode; a second electrode pad electrically connected to the second gate electrode; a third electrode pad electrically connected to the third gate electrode; a fourth electrode pad electrically connected to the fourth gate electrode; and a fifth electrode pad electrically connected to the fifth gate electrode.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H03K 17/567 - Circuits caractérisés par l'utilisation d'au moins deux types de dispositifs à semi-conducteurs, p.ex. BIMOS, dispositifs composites tels que IGBT
A voltage of a third gate electrode of a first semiconductor device transitions from a first off-voltage that is not more than a threshold voltage to a second off-voltage lower than the first off-voltage during a period from when a pulse signal for turning off a first gate electrode and a second gate electrode of the first semiconductor device is input to a drive device to when any one of a first gate electrode, a second gate electrode, and a third gate electrode of a second semiconductor device reaches an on-voltage.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
An inductor includes a magnetic member comprising a first core, a second core, a third core, and a connecting portion connecting the first core, the second core and the third core; a first winding wound around the first core; a second winding wound around the second core; and a third winding wound around the third core and connected between the first winding and the second winding. A direction of a magnetic flux generated in the third core by a current flowing through the first winding and a direction of a magnetic flux generated in the third core by a current flowing through the second winding are opposite to each other.
H01F 27/30 - Fixation ou serrage de bobines, d'enroulements ou de parties de ceux-ci entre eux; Fixation ou montage des bobines ou enroulements sur le noyau, dans l'enveloppe ou sur un autre support
H01F 27/26 - Fixation des parties du noyau entre elles; Fixation ou montage du noyau dans l'enveloppe ou sur un support
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
93.
TRAY FOR PHYSICAL DISTRIBUTION SORTER AND ARTICLE SORTING APPARATUS
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (Japon)
Inventeur(s)
Tobayama, Kyouichi
Abrégé
According to an embodiment, a tray for a physical distribution sorter includes a frame body, first and second pulleys, first and second rotating plates, and a wire. The frame body moves in a predetermined direction on a track of the physical distribution sorter. The first and second pulleys rotate about a predetermined axis with respect to the frame body. The first rotating plates rotate with rotation of the first pulley. The second rotating plate rotates with rotation of the second pulley. The wire is wound around the first and second pulleys. When the wire is unwound from the second pulley and wound around the first pulley, the first and second rotating plates rotate and close. When the wire is unwound from the first pulley and wound around the second pulley, the first and second rotating plates rotate and open in a double-open manner.
B65G 47/51 - Dispositifs pour décharger les objets ou matériaux des transporteurs avec distribution, p.ex. automatique, aux points voulus selon des signaux non programmés, p.ex. répondant à la situation de l'approvisionnement au point de destination
B65G 47/61 - Dispositifs pour transférer objets ou matériaux entre transporteurs, p.ex. pour décharger ou alimenter vers des transporteurs du type suspendu, p.ex. à trolley ou à partir de ces transporteurs pour objets
94.
MAGNETIC HEAD WITH A MULTILAYER BETWEEN A MAIN POLE AND AN AUXILIARY POLE AND MAGNETIC RECORDING/REPRODUCING DEVICE
According to one embodiment, a magnetic head comprises a main pole, an auxiliary magnetic pole provided with the main pole with a write gap therebetween, and a multi-layer provided between the main pole and the auxiliary magnetic pole, by which electric conductivity is enabled from the main pole to the auxiliary magnetic pole. The multi-layer includes a first cooling layer and a first conductive layer, orderly provided on a surface of the main pole opposed to the auxiliary magnetic pole, and the first cooling layer cools the main pole by Peltier effect when electric current is applied, and a length thereof in a track width is longer than a length in a track width of the main pole.
G11B 5/127 - Structure ou fabrication des têtes, p.ex. têtes à variation d'induction
G11B 5/00 - Enregistrement par magnétisation ou démagnétisation d'un support d'enregistrement; Reproduction par des moyens magnétiques; Supports d'enregistrement correspondants
According to an embodiment, a magnetic disk is provided with a servo sector in which a preamble and a burst pattern are recorded. A recording frequency of the preamble is different from an even multiple of a recording frequency of the burst pattern. A controller determines a demodulation period of the burst pattern while a magnetic head passes through the servo sector. The controller acquires a first phase of a demodulation signal of the burst pattern and acquires first position information of the magnetic head, by demodulating the burst pattern in the demodulation period. The controller corrects the first position information on the basis of the first phase. The controller executes positioning control of the magnetic head on the basis of second position information that is post-correction first position information.
G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p.ex. pour compenser les irrégularités de surface ou pour suivre les pistes pour suivre les pistes d'un disque
96.
PROCESSING SYSTEM, CALCULATING DEVICE, PROCESSING METHOD, TRACKING METHOD, AND STORAGE MEDIUM
A processing system includes an imaging part, a detecting part, an identifying part, a tracking part, and a calculator. The imaging part acquires an image by imaging a work site from above. The detecting part detects a person visible in the image and acquires a coordinate of the person in the image. The identifying part identifies the person and associates identification information with the detected person. The tracking part tracks the person associated with the identification information by using the coordinate. The calculator calculates a dwell time of the person in a work area set in the work site by using a result of the tracking.
A communication device includes a storage, and one or more hardware processors. The storage stores, for each of a plurality of servers, setting information including identification information of the server, authentication information used for connecting to the server, permission information indicating permitted communication with the server, and a priority. The hardware processors select, based on the priority, a first server that is one of the servers. The hardware processors perform, according to the permission information for the first server, communication with the first server that is connected based on the identification information and the authentication information.
H04L 69/40 - Dispositions, protocoles ou services de réseau indépendants de la charge utile de l'application et non couverts dans un des autres groupes de la présente sous-classe pour se remettre d'une défaillance d'une instance de protocole ou d'une entité, p.ex. protocoles de redondance de service, état de redondance de protocole ou redirection de service de protocole
98.
PROCESSING METHOD, PROCESSING APPARATUS AND PROCESSING SYSTEM FOR BATTERY, AND NON-TRANSITORY STORAGE MEDIUM
In an embodiment, in a processing method for a battery, whether a target battery is regenerable without separating an electrode active material serving as a positive electrode active material and an electrode active material serving as a negative electrode active material of the target battery from an electrode group, based on the analysis result of measurement data for the target battery.
According to one embodiment, a radar device includes an oscillator configured to generate a reference signal, a first unit group, and a second unit group. The first unit group includes first and second units configured to transmit/receive based on a reference signal. The second unit group includes third and fourth units configured to transmit/receive based on the reference signal. The first and third units are connected to the oscillator via first and second signal lines, respectively. The second and fourth units are connected to the first and third units via third and fourth signal lines, respectively.
A semiconductor device includes a conductive member, a solder layer, a chip, a coating film, an insulating part, and a sealing resin. The solder layer is located on the conductive member. The chip is located on the solder layer. The coating film is insulative. The coating film is located on the chip. The coating film includes a first covering part. The first covering part covers an outer perimeter edge of an upper surface of the chip. The insulating part is located on the coating film. The sealing resin seals the solder layer, the chip, the coating film, and the insulating part.
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 21/784 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs qui consistent chacun en un seul élément de circuit le substrat étant un corps semi-conducteur
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
