Abrégé

According to one embodiment, a condition monitoring apparatus includes a processing circuitry. The processing circuitry is configured to collect a sensor signal output from a sensor that monitors a condition of a mechanical device that is at least partially mobile. The processing circuitry is configured to diagnose a presence or absence of an anomaly in the mechanical device based on the sensor signal. The processing circuitry is configured to cut out the sensor signal in a time width according to any one or more of a speed, an acceleration, and a jerk of the mechanical device. The processing circuitry is configured to determine the presence or absence of an anomaly based on the cut out sensor signal.

Classes IPC  ?

• G01M 13/00 - Test des pièces de machines
• G01P 15/00 - Mesure de l'accélération; Mesure de la décélération; Mesure des chocs, c. à d. d'une variation brusque de l'accélération
• G01P 3/00 - Mesure de la vitesse linéaire ou angulaire; Mesure des différences de vitesses linéaires ou angulaires

Abrégé

According to one embodiment, a voice activity detection apparatus includes a processing circuit. The processing circuit acquires an acoustic signal and a non-acoustic signal, calculates an acoustic feature based on the acoustic signal, calculates a non-acoustic feature based on the non-acoustic signal, calculates a voice emphasized feature based on the acoustic signal and the non-acoustic signal, calculates a voice existence/non-existence feature on the basis of the acoustic feature and the non-acoustic feature, calculates a voice existence score based on the voice emphasized feature and the voice existence/non-existence feature, detects a voice section and/or a non-voice section based on comparison of the voice existence score with a threshold.

Classes IPC  ?

• G10L 25/78 - Détection de la présence ou de l’absence de signaux de voix
• G10L 25/30 - Techniques d'analyses de la parole ou de la voix qui ne se limitent pas à un seul des groupes caractérisées par la technique d’analyse utilisant des réseaux neuronaux
• G10L 15/02 - Extraction de caractéristiques pour la reconnaissance de la parole; Sélection d'unités de reconnaissance 

Abrégé

An ultrasonic welding diagnostic method includes: applying a pressing force to an object to be joined so as to generate a surface pressure on a joint surface of the object to be joined; inputting ultrasonic waves to the joint surface; detecting an elastic wave propagating through the object to be joined by at least one sensor at a plurality of different positions; analyzing a signal detected by the sensor to generate an envelope of the signal and calculating information about the envelope; and determining a joint state on the joint surface based on the calculation result of the information.

Classes IPC  ?

• B23K 31/12 - Procédés relevant de la présente sous-classe, spécialement adaptés à des objets ou des buts particuliers, mais non couverts par un seul des groupes principaux relatifs à la recherche des propriétés, p.ex. de soudabilité, des matériaux
• B23K 20/10 - Soudage non électrique par percussion ou par une autre forme de pression, avec ou sans chauffage, p.ex. revêtement ou placage utilisant des vibrations, p.ex. soudage ultrasonique
• G01N 29/04 - Analyse de solides

Abrégé

According to one embodiment, a data protection apparatus includes a processor configured to execute an encryption process on log data including a data frame including a plurality of pieces of data generated along a time sequence. The processor is configured to encrypt each of the pieces of data with a corresponding encryption key among a first initial key and a first encryption keys generated in a forward direction to a time sequence of the pieces of data. The processor is configured to encrypt each of a plurality of pieces of data encrypted with the corresponding encryption key with a corresponding encryption key among a second initial key and a second encryption keys generated in a backward direction to a time sequence of the pieces of data.

Classes IPC  ?

• H04L 9/32 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système
• H04L 9/08 - Répartition de clés
• H04L 9/14 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité utilisant plusieurs clés ou algorithmes

Abrégé

An integrated circuit of an embodiment includes a plurality of AD conversion circuits including a first AD conversion circuit and a second AD conversion circuit, and a control circuit configured to delay a start time of sampling processing of the second AD conversion circuit as compared with a usual start time such that the first AD conversion circuit is not influenced by noise generated by the sampling processing of the second AD conversion circuit, and to shorten a sampling time period to control a termination time of the sampling processing of the second AD conversion circuit to be concurrent with a termination time in a case of performing usual sampling processing.

Classes IPC  ?

• H03M 1/06 - Compensation ou prévention continue de l'influence indésirable de paramètres physiques

Abrégé

A semiconductor device according to the embodiment includes: a frame body having a wall surface; an insulating substrate surrounded by the frame body, the insulating substrate having a first metal layer and a second metal layer on a surface, the second metal layer being located between the first metal layer and the wall surface; a semiconductor chip including an electrode and provided on the first metal layer; and a bonding wire having a first bond portion connected to the electrode, a second bond portion connected to the second metal layer, and an intermediate portion between the first bond portion and the second bond portion; wherein a second angle formed between a second direction in which the second bond portion extends and the wall surface is smaller than a first angle formed between a first direction in which the intermediate portion extends and the wall surface.

Classes IPC  ?

• H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
• H01L 23/047 - Conteneurs; Scellements caractérisés par la forme le conteneur étant une structure creuse ayant une base conductrice qui sert de support et en même temps de connexion électrique pour le corps semi-conducteur les autres connexions étant parallèles à la base
• H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
• H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
• H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide

Abrégé

According to one embodiment, a learning apparatus includes a processor. The processor divides target data into pieces of partial data. The processor inputs the pieces of partial data into a first network model to output a first prediction result and calculates a first confidence indicating a degree of contribution to the first prediction result. The processor inputs the target data into a second network model to output a second prediction result and calculates a second confidence indicating a degree of contribution to the second prediction result. The processor updates a parameter of the first network model, based on the first prediction result, the second prediction result, the first confidence and the second confidence.

Classes IPC  ?

• G06N 3/04 - Architecture, p.ex. topologie d'interconnexion
• G06N 3/08 - Méthodes d'apprentissage

Abrégé

A light detector according to one embodiment, includes an element region, a light concentrator, a structure part and a light-shielding part. The element region includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type. The light concentrator is separated from the element region in a first direction. The light concentrator is configured to concentrate light incident on the light concentrator. The structure part is arranged with the element region in a direction crossing the first direction. The structure part has a different refractive index from the element region. The light-shielding part is located between the element region and the light concentrator. The light-shielding part includes an opening. At least a portion of the light incident on the light concentrator is able to be incident on the element region by passing through the opening.

Classes IPC  ?

• H01L 27/146 - Structures de capteurs d'images
• G01S 17/89 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour la cartographie ou l'imagerie

Abrégé

A semiconductor device includes a semiconductor part including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. The second semiconductor layer is provided in the first semiconductor layer. The semiconductor part includes first and second interfaces of the first semiconductor layer and the second semiconductor layer. The first interface intersects the second interface. The second semiconductor layer includes a plurality of sub-layers stacked in a direction orthogonal to the first interface. The second interface includes interfaces of the sub-layers of the second semiconductor layer and the first semiconductor layer. The second interface extending in a second direction inclined with respect to a first direction orthogonal to the first interface.

Classes IPC  ?

• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
• H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
• H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
• H01L 29/66 - Types de dispositifs semi-conducteurs

Abrégé

A gas detection device according to an embodiment includes a first light source irradiating infrared, a second light source irradiating visible light, a low-pass filter that transmits the infrared irradiated from the first light source, reflects the visible light irradiated from the second light source, and aligns an optical axis of the visible light with an optical axis of the infrared, a first retroreflector on which the infrared and the visible light having the aligned optical axes are incident, a first detecting part detecting the infrared reflected by the first retroreflector, and a scattering body located at a center of the first retroreflector.

Classes IPC  ?

• G01N 21/3504 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse des gaz, p.ex. analyse de mélanges de gaz

Abrégé

According to one embodiment, a semiconductor device includes a semiconductor circuit having an electrode on a first surface. A case part surrounds the semiconductor circuit. A matching part is provided including a signal terminal on an outside of the matching part and a lead on the inside of the matching part that is electrically connected to the signal terminal. The case part and matching part are configured to engage one another and be attached to one another when pressed together. The lead includes a contact portion that is in contact with the electrode when the matching part is attached to the case part, a first portion connecting between the signal terminal and the contact portion, and a spring portion between the first portion and the contact portion.

Classes IPC  ?

• H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide

Abrégé

According to one embodiment, an analysis apparatus includes processing circuitry. The processing circuitry acquires sensor data from a measurement target, calculates a state value based on the sensor data, sets, based on time-series data of the state value and predetermined criteria, a plurality of noticed sections in the time-series data, performs clustering using the state value regarding each of the noticed sections and generates a clustering result, and generates, based on the clustering result, stress information including characteristic information of each of a plurality of clusters.

Classes IPC  ?

• G06V 10/762 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant le regroupement, p.ex. de visages similaires sur les réseaux sociaux
• G06V 10/62 - Extraction de caractéristiques d’images ou de vidéos relative à une dimension temporelle, p.ex. extraction de caractéristiques axées sur le temps; Suivi de modèle
• G06V 10/74 - Appariement de motifs d’image ou de vidéo; Mesures de proximité dans les espaces de caractéristiques
• G06V 10/80 - Fusion, c. à d. combinaison des données de diverses sources au niveau du capteur, du prétraitement, de l’extraction des caractéristiques ou de la classification

Abrégé

A semiconductor device includes a semiconductor part, first and second electrodes and first-third and second-third electrodes. The semiconductor part is provided between the first and second electrodes. The semiconductor part includes a first semiconductor layer of a first conductivity type, second and third semiconductor layers of a second conductivity type. The second and third semiconductor layers are arranged between the first layer and the second electrode. The first-third and second-third electrodes are provided in the semiconductor part. The second semiconductor layer is provided between the first-third electrode and the second-third electrode. The second electrode includes a contact portion extending into the second semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer between the contact portion and the second-third electrode. The second semiconductor layer includes a first portion facing the third semiconductor layer via the contact portion.

Classes IPC  ?

• H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
• H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
• H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ

Abrégé

According to an embodiment, an information processing device includes a reception unit and a determination unit. The reception unit receives a plurality of pieces of rack data including first identification information of one or more kinds of products to be housed in a plurality of racks, and a plurality of pieces of order data including second identification information of one or more kinds of products to be picked from at least part of the plurality of racks. The determination unit, based on the rack data, determines a processing sequence of the plurality of pieces of order data such that a ratio of picking products assigned to pieces of the order data from a single rack is increased. The plurality of racks are able to be moved to a work station where housing containers corresponding to at least part of the plurality of pieces of order data are disposed.

Classes IPC  ?

• G06Q 10/08 - Logistique, p.ex. entreposage, chargement ou distribution; Gestion d’inventaires ou de stocks
• G06F 16/28 - Bases de données caractérisées par leurs modèles, p.ex. des modèles relationnels ou objet

Abrégé

A semiconductor device of embodiments includes: a silicon carbide layer having a first face parallel to a first direction and a second direction crossing the first direction and a second face facing the first face; a first trench on a side of the first face extending in the first direction; a second trench extending in the first direction; a third trench extending in the second direction and continuous with the first trench and the second trench; a fourth trench extending in the first direction, disposed between the first trench and the second trench, and spaced from the third trench in the first direction; a gate electrode in the first to fourth trench; a gate insulating layer; a first conductive layer crossing the third trench and connected to the gate electrode; a first electrode disposed on the first face; and a second electrode disposed on the second face.

Classes IPC  ?

• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter

Abrégé

A carbon dioxide electrolytic device includes: a carbon dioxide electrolysis cell having a cathode and an anode flow path, a cathode, an anode, and a first diaphragm; a first current regulator to supply a first current; a first gas/liquid separator to separate a first fluid from the anode flow path into a first liquid and gas; an electrodialysis cell having, first and second electrodes, first to fourth rooms, and second to fourth diaphragms; a second current regulator to supply a second current; at least one detector out of a first detector to detect a flow rate of the first gas or a concentration of carbon dioxide in the first gas, and a second detector to detect a pH or a concentration of at least one ion in the first fluid; and a first controller to regulate a second current, in accordance with at least one detection signal.

Classes IPC  ?

• C25B 1/23 - Oxyde de carbone ou gaz de synthèse
• C25B 9/19 - Cellules comprenant des électrodes fixes de dimensions stables; Assemblages de leurs éléments de structure avec des diaphragmes
• C25B 13/00 - PROCÉDÉS ÉLECTROLYTIQUES OU ÉLECTROPHORÉTIQUES POUR LA PRODUCTION DE COMPOSÉS ORGANIQUES OU MINÉRAUX, OU DE NON-MÉTAUX; APPAREILLAGES À CET EFFET Éléments d'espacement
• C25B 15/029 - Concentration
• C25B 3/07 - Composés contenant au moins un atome d’oxygène
• C25B 3/26 - Réduction du dioxyde de carbone
• C25B 9/65 - Dispositifs pour l'alimentation en courant; Connexions d'électrodes; Connexions électriques intercellulaires

Abrégé

According to one embodiment, a semiconductor device includes an n-layer and a p-layer arranged in a vertical trench structure in a drift layer. A depletion layer is formed to a depth of a trench of the vertical trench structure after a depletion layer spreads in a lateral direction between the n-layer and the p-layer when a voltage is applied between a drain and a source. A method for controlling the semiconductor device comprises detecting a voltage value between the drain and the source of the semiconductor device at turn-off and reducing a current value of a gate discharge current discharged from a gate in a first period. The first period starting before the detected voltage value greatly changes.

Classes IPC  ?

• H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ

Abrégé

In general, according to one embodiment, there is provided a method of manufacturing a structure. The method includes forming a recess in a semiconductor substrate; oxidizing at least a bottom inner surface of the recess; and providing at least the bottom inner surface of the recess with a liquid capable of dissolving an oxide of a semiconductor substrate material.

Classes IPC  ?

• H01L 21/62 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs n'ayant ni barrière de potentiel ni barrière de surface
• H01G 4/33 - Condensateurs à film mince ou à film épais

Abrégé

According to one embodiment, a semiconductor device includes first and second electrodes, first to fifth semiconductor regions, and a gate electrode. The first semiconductor region is located on the first electrode. The first semiconductor region includes a first region. The gate electrode is located on the first semiconductor region with a gate insulating layer interposed. The second semiconductor region faces the gate electrode via the gate insulating layer in a second direction perpendicular to a first direction. The third semiconductor region is located between the first and second semiconductor regions. A length in the second direction of a lower portion of the third semiconductor region is greater than a length in the second direction of an upper portion of the third semiconductor region. The fourth semiconductor region is located between the third semiconductor region and the gate electrode. The fifth semiconductor region is located on the second semiconductor region.

Classes IPC  ?

• H01L 29/36 - Corps semi-conducteurs caractérisés par la concentration ou la distribution des impuretés

Abrégé

According to one embodiment, an information processing device includes an acquisition part, and a processor. The acquisition part is configured to acquire a reproduction signal obtained from a recording part. The recording part includes a recording medium. The reproduction signal includes a first signal corresponding to information recorded in the recording medium. The processor is configured to derive a first output and a second output. The first output is obtained by first information being processed by a first processing model. The first information includes the first signal. The second output is obtained by the first information being processed by a second processing model. The processor is configured to output a result of processing the first information based on a third output. The third output is obtained based on the first output, the second output, and the first information.

Classes IPC  ?

• G11B 5/012 - Enregistrement, reproduction ou effacement sur des disques magnétiques
• G11B 5/127 - Structure ou fabrication des têtes, p.ex. têtes à variation d'induction

Abrégé

According to one embodiment, a photomask includes a plurality of unit regions arranged in a first direction and a second direction crossing the first direction. Each of the unit regions includes a first region having a first light-shielding rate, and a second region having a second light-shielding rate different from the first light-shielding rate. The second region is provided around the first region. The unit regions include a first unit region and a second unit region having same size each other. A distance between the first unit region and a center of a range in which the unit regions are arranged is different from a distance between the second unit region and the center. A light-shielding rate of the first unit region is different from a light-shielding rate of the second unit region.

Classes IPC  ?

• G03F 1/38 - Masques à caractéristiques supplémentaires, p.ex. marquages pour l'alignement ou les tests, ou couches particulières; Leur préparation
• H01L 27/146 - Structures de capteurs d'images

Abrégé

According to one embodiment, provided is an air battery including a negative electrode, an air electrode to which oxygen is supplied, a solid electrolyte layer positioned between the negative electrode and the air electrode, an aqueous electrolyte layer positioned between the solid electrolyte layer and the air electrode, and a proton conduction layer positioned between the aqueous electrolyte layer and the air electrode. The aqueous electrolyte layer includes an aqueous electrolyte including a polyprotic acid having two or more carboxyl groups, an electrolyte salt, and water.

Classes IPC  ?

• H01M 12/08 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Éléments hybrides; Leur fabrication composés d'un demi-élément du type élément à combustible et d'un demi-élément du type à élément secondaire
• H01M 10/0562 - Matériaux solides
• H01M 4/40 - Alliages à base de métaux alcalins

Abrégé

According to an embodiment, a quantum cryptographic communication system includes a first quantum key distribution (QKD) device, and a first key management device. The first QKD device that shares a quantum encryption key with a second QKD device through QKD. The first key management device includes a reception unit and a first hardware security module (HSM). The reception unit receives the quantum encryption key from the first QKD device. The first HSM includes a storage unit, a generation unit, and a first encryption unit. The storage unit stores a first encryption key therein. The generation unit generates an application key used in an encryption process by a cryptographic application. The first encryption unit that encrypts, with the first encryption key, the application key transmitted to a second key management device connected to the second QKD device.

Classes IPC  ?

• H04L 9/08 - Répartition de clés
• H04L 9/06 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité l'appareil de chiffrement utilisant des registres à décalage ou des mémoires pour le codage par blocs, p.ex. système DES

Abrégé

A semiconductor chip includes a semiconductor substrate, a plurality of first wirings extending in a first direction parallel to the upper surface of the semiconductor substrate and disposed entirely above the upper surface of the semiconductor substrate, a second wiring disposed between two of the first wirings that are adjacent to each other and entirely below the upper surface of the semiconductor substrate such that an upper surface of the second wiring is below a lower surface of the two first wirings, and a first insulating film provided on the second wiring and spaced apart from the two first wirings in a second direction that is perpendicular to the first direction, the first insulating film having an upper surface that is above the lower surface of the two first wirings.

Classes IPC  ?

• H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
• H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
• H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices

Abrégé

According to one embodiment, a light detection device includes a first region, a second region, a first electrode, and a second electrode. The first region includes a plurality of first semiconductor light detection elements, and a plurality of first lenses respectively located on the plurality of first semiconductor light detection elements. The second region includes a plurality of second semiconductor light detection elements. No lens is located directly above the plurality of second semiconductor light detection elements. The first electrode is electrically connected with the plurality of first semiconductor light detection elements. The second electrode is electrically connected with the plurality of second semiconductor light detection elements.

Classes IPC  ?

• G01S 17/89 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour la cartographie ou l'imagerie
• H01L 31/107 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet caractérisés par une seule barrière de potentiel ou de surface la barrière de potentiel fonctionnant en régime d'avalanche, p.ex. photodiode à avalanche
• H01L 27/144 - Dispositifs commandés par rayonnement

Abrégé

An adhesion/peeling method according to an embodiment includes adhering a first surface side of an electrically peelable adhesive sheet to a predetermined position of a fixation target object, wherein the electrically peelable adhesive sheet is formed of an electro-peeling adhesive having adhesiveness on the first surface side and a second surface side thereof, and the adhesiveness of the electro-peeling adhesive is lowered due to an input of a voltage; adhering a first electrode of an adherend including the first electrode formed of a conductor to the second surface side of the electrically peelable adhesive sheet; containing a liquid at the predetermined position of the fixation target object to temporarily form a second electrode with conductivity on a surface of the fixation target object; and inputting a predetermined voltage between the first electrode and the second electrode to peel of the electrically peelable adhesive sheet from the fixation target object.

Classes IPC  ?

• C09J 9/02 - Adhésifs conducteurs de l'électricité

Abrégé

A semiconductor device includes a first electrode, a plurality of unit element regions, and a partitioning region. Each of the unit element regions includes a first semiconductor part, a second electrode, and a first conductive part. The first semiconductor part includes first to third semiconductor regions. The first semiconductor region is located above the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The second electrode is located on the second and third semiconductor regions. The first conductive part faces the second semiconductor region via a first insulating film. At least a portion of the plurality of unit element regions includes a common pattern. The partitioning region includes a second semiconductor part and partitions the plurality of unit element regions. The second semiconductor part is continuous with the first semiconductor part.

Classes IPC  ?

• H01L 29/66 - Types de dispositifs semi-conducteurs
• H01L 29/36 - Corps semi-conducteurs caractérisés par la concentration ou la distribution des impuretés
• H01L 21/78 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels
• H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/872 - Diodes Schottky

Abrégé

A LiDAR device according to an embodiment includes a rotating mirror having reflective surfaces, first/second light emitters each emitting light toward the rotating mirror, and first/second light receivers each receiving light reflected by the rotating mirror and converting the received light into an electrical signal. The first light emitter emits light in an orientation where an upper section of a distance measurement range is scanned. The second light emitter emits light in an orientation where a lower section of the distance measurement range is scanned. The first light receiver is provided at a position where light emitted by the first light emitter and reflected at the distance measurement range is received via the rotating mirror. The second light receiver is provided at a position where light emitted by the second light emitter and reflected at the distance measurement range is received via the rotating mirror.

Classes IPC  ?

• G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
• G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues

Abrégé

In an embodiment, an information processing apparatus relating to soldering of a component onto a substrate is provided. The information processing apparatus includes a determination unit determining, using a machine learning model that outputs an inspection result of a post-reflow inspection from an input of image data based on one or more pre-reflow images, whether or not defectiveness will occur in the post-reflow inspection from the image data based on the pre-reflow images acquired in real time.

Classes IPC  ?

• G06T 7/00 - Analyse d'image
• G06V 10/25 - Détermination d’une région d’intérêt [ROI] ou d’un volume d’intérêt [VOI]
• G06V 10/56 - Extraction de caractéristiques d’images ou de vidéos relative à la couleur
• G06V 10/70 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique

Abrégé

An analog switch circuit of an embodiment includes a CMOS analog switch, a first gate drive circuit, and a second gate drive circuit, a gate operating withstand voltage of the CMOS analog switch being VGT, an enable signal and a control signal being inputted to the first gate drive circuit and the second gate drive circuit. Assuming that VGT

Classes IPC  ?

• H03K 17/06 - Modifications pour assurer un état complètement conducteur
• H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites

Abrégé

A superconducting coil according to an embodiment includes: a winding frame; a superconducting wire wound around the winding frame and having a first region and a second region facing the first region in a coil radial direction; and a resin layer located between the first region and the second region and including particles, an epoxy resin surrounding the particles, and a region existing between the particle and the epoxy resin, the region including silane containing a phenylamino group. The average particle diameter of the particles is equal to or more than 1 μm and equal to or less than 5 μm, and the volume ratio of the particles in the resin layer is equal to or more than 50% and equal to or less than 66%.

Classes IPC  ?

• H01F 6/06 - Bobines, p.ex. dispositions pour l'enroulement, l'isolation, les enveloppes ou les bornes des bobines
• H01L 39/12 - Dispositifs utilisant la supraconductivité ou l'hyperconductivité; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives - Détails caractérisés par le matériau
• H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateurs; Appareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
• H01F 41/12 - Isolement d'enroulements

Abrégé

A method of analyzing an antimony ion of an embodiment, the method includes using a first analysis solution or a second analysis solution, the first analysis solution containing trivalent antimony ions and pentavalent antimony ions, the second analysis solution being a solution obtained by mixing a first acid and the first analysis solution, and mixing the first analysis solution or the second analysis solution with a second acid to obtain a third analysis solution in which the pentavalent antimony ions are chlorinated and which contains [SbCl6]− ions, mixing the third analysis solution and a first organic solvent and phase-separating the mixture into a fourth analysis solution as an organic phase and an aqueous phase to obtain the fourth analysis solution, mixing the fourth analysis solution and a coloring liquid containing rhodamine B to obtain a fifth analysis solution, and evaluating a concentration of the pentavalent antimony ions in the first analysis solution from color of the fifth analysis solution. A total concentration of nitric acid, cerium (IV) nitrate, and cerium (IV) sulfate contained in the first analysis solution is 0.00 mol/L or more and 0.1 mol/L or less. The total concentration of nitric acid, cerium (IV) nitrate, and cerium (IV) sulfate contained in the first acid is 0.00 mol/L or more and 0.1 mol/L or less. The total concentration of nitric acid, cerium (IV) nitrate, and cerium (IV) sulfate contained in the second acid is 0.00 mol/L or more and 0.1 mol/L or less.

Classes IPC  ?

• G01N 21/78 - Systèmes dans lesquels le matériau est soumis à une réaction chimique, le progrès ou le résultat de la réaction étant analysé en observant l'effet sur un réactif chimique produisant un changement de couleur

Abrégé

A spark discharge detection device includes a discharge detector, a waveform extension circuit, and determination circuit. The discharge detector includes a metal electrode that detects discharge between an electrode and a sliding body that is in contact with and sliding surface of the electrode. The waveform extension circuit configured to extend a discharge waveform output from the discharge detector in a time direction. The determination circuit configured to determine that discharge has occurred in the sliding body when a signal value exceeds a first threshold and a time during which the signal value exceeds the first threshold is held for a time longer than a first time for the output of the waveform extension circuit.

Classes IPC  ?

• G01R 31/34 - Tests de machines dynamoélectriques
• G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée

Abrégé

A key management device according to an embodiment is for managing an application key used for encrypting communication of a user network including cryptographic applications. The key management device includes a plan acquisition unit, a plan execution unit, a communication unit, and a provision unit. The plan acquisition unit acquires a key distribution plan formulated based on state information indicating a state of the user network. The plan execution unit determines a distribution amount of the application key for each key sharing destination corresponding to a destination cryptographic application based on the key distribution plan. The communication unit encrypts the application key using a link key generated by QKD, and transmits the encrypted application key to the key sharing destination. The provision unit provides the application key in response to a request from the cryptographic application.

Classes IPC  ?

• H04L 9/08 - Répartition de clés
• H04L 9/40 - Protocoles réseaux de sécurité

Abrégé

According to one embodiment, a disk device includes magnetic disks, a spindle motor, and a housing. The magnetic disks are arranged in an axial direction. The spindle motor rotates the magnetic disks about a first rotation axis extending in the axial direction. The housing includes a first wall, an inner surface of the first wall, an outer surface of the first wall, and a second wall. The spindle motor is attached to the first wall. The first wall is apart from the magnetic disks in the axial direction. The second wall protrudes from the first wall and surrounds the plurality of magnetic disks in a direction orthogonal to the axial direction. In the axial direction a maximum distance between the inner surface and the outer surface is 1.5% or more and 8% or less of a maximum dimension of the housing.

Classes IPC  ?

• G11B 17/02 - Guidage des supports d'enregistrement n'ayant pas spécifiquement la forme d'un fil ou d'une bande ainsi que de leurs supports - Détails

Abrégé

A semiconductor device of embodiments includes: a silicon carbide layer having a first face and a second face; a trench in the silicon carbide layer extending in a first direction; a gate electrode disposed in the trench; a first silicon carbide region of n-type; a second silicon carbide region of p-type between the first silicon carbide region and the first face being shallower than the trench; a third silicon carbide region of n-type disposed between the second silicon carbide region and the first face; a fourth silicon carbide region of n-type disposed between the third silicon carbide region and the first face, a width of the fourth silicon carbide region in a second direction perpendicular to the first direction being smaller than a width of the third silicon carbide region in the second direction; and a first electrode in contact with the fourth silicon carbide region.

Classes IPC  ?

• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
• H01L 29/66 - Types de dispositifs semi-conducteurs

Abrégé

A semiconductor device includes a semiconductor substrate of a first conductivity type; a semiconductor layer located on the semiconductor substrate, the semiconductor layer being of the first conductivity type and including a first device part; a buried layer located between the semiconductor substrate and the first device part, the buried layer being of a second conductivity type; a guard region located at a first-direction side of the first device part, the guard region being of the second conductivity type, a lower end of the guard region contacting the buried layer, an upper end of the guard region reaching an upper surface of the semiconductor layer, the guard region not being located at a second-direction side of the first device part, the second direction being opposite to the first direction; and a first semiconductor region located inside the first device part and being of the second conductivity type.

Classes IPC  ?

• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices

Abrégé

A distance measuring device has a plurality of light receiving elements each of which receives a reflected optical signal reflected by an object, and an image processor that generates a distance image in accordance with distances to the object, based on signal intensities and light reception timings of the reflected optical signal received by the plurality of light receiving elements, wherein the image processor detects a direction of the object, based on at least either the signal intensities of the reflected optical signal received by the light receiving elements or the distances to the object measured based on the reflected optical signal, and divides at least one or some of pixels included in the distance image, based on the direction of the detected object.

Classes IPC  ?

• G01S 17/42 - Mesure simultanée de la distance et d'autres coordonnées
• G01S 7/51 - Dispositions pour l'affichage
• G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p.ex. caméras à temps de vol ou lidar flash
• G01S 7/486 - Récepteurs
• G01S 7/4863 - Réseaux des détecteurs, p.ex. portes de transfert de charge

Abrégé

In one embodiment, electronic circuitry includes a driving circuit that is configured to: supply a driving current to a control terminal of a first switching element; and increase the driving current in accordance with a first time at which a current flowing through a second switching element connected to a first terminal or a second terminal of the first switching element becomes 0.

Classes IPC  ?

• H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
• H02M 7/5387 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p.ex. onduleurs à impulsions à un seul commutateur dans une configuration en pont
• H02P 27/06 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs

Abrégé

According to one embodiment, an inspection system includes an infrared imaging device and a controller. The infrared imaging device is for acquiring an image of a thermocompression-bonded tape package with infrared light. The tape package comprises a first tape covering a second tape. The second tape can have a pocket for an electronic component. The controller is configured to receive the image of the thermocompression-bonded tape package and detect a state of thermocompression bonding in a predetermined region of the tape package based on the received image. For example, the inspection system may detect when the bonding of the first tape to the second tape is unsatisfactory or abnormal.

Classes IPC  ?

• G06T 7/00 - Analyse d'image
• G06T 7/73 - Détermination de la position ou de l'orientation des objets ou des caméras utilisant des procédés basés sur les caractéristiques
• H04N 5/225 - Caméras de télévision
• G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
• G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser

Abrégé

According to an embodiment, a sound emitting apparatus includes a vibrator, a holding part, and a fixing part. The holding part is configured to hold the vibrator. The fixing part is configured to fix the holding part. A stiffness of the fixing part is lower than a stiffness of the holding part.

Classes IPC  ?

• H04R 17/00 - Transducteurs piézo-électriques; Transducteurs électrostrictifs
• H04R 1/28 - Supports de transducteurs ou enceintes conçus pour réponse de fréquence spécifique; Enceintes de transducteurs modifiées au moyen d'impédances mécaniques ou acoustiques, p.ex. résonateur, moyen d'amortissement
• H04R 1/02 - Boîtiers; Meubles; Montages à l'intérieur de ceux-ci

Abrégé

An information processing device is disclosed. In the information processing device, a derivation unit derives, for each of sensors, a constraint expression obtained by substituting an observation value for a term of an observation value variable in an error model. The observation value indicates the number of present objects observed by the sensors. The error model represents correspondence between: the number of present objects in an observation range represented by the observation value variable and an error term related to an assumed detection error range of the sensor, and the number of present objects in an observation range represented by a variable indicating the number of present objects in an observation unit space. A range calculation unit calculates a possible range of the number of present objects. A reliability calculation unit calculates reliability of an estimation value of the number of present objects for each of the areas.

Classes IPC  ?

• G06F 11/07 - Réaction à l'apparition d'un défaut, p.ex. tolérance de certains défauts

Abrégé

A semiconductor device includes a first electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a fifth semiconductor layer, and a second electrode. The fourth semiconductor layer is located in a second region on the first semiconductor layer. The fourth semiconductor layer is separated from the second semiconductor layer with a portion of the first semiconductor layer interposed. An impurity concentration of the fourth semiconductor layer is greater than an impurity concentration of the first semiconductor layer and less than an impurity concentration of the second semiconductor layer.

Classes IPC  ?

• H01L 29/872 - Diodes Schottky
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus

Abrégé

According to one embodiment, provided is an electrode including an active material-containing layer that includes an active material, inorganic solid particles having lithium ion conductivity, and a carbon material. The active material-containing layer has a first peak corresponding to a maximum log differential intrusion in a log differential intrusion distribution curve according to mercury porosimetry. A pore size diameter D1 at the first peak is 0.05 μm to 10 μm. A first pore volume corresponding to the first peak is 20% to 50% with respect to a total pore volume within the active material-containing layer. A ratio of a second pore volume in a range of 0.005 μm to 0.02 μm relative to the first pore volume is 0.1% to 5%.

Classes IPC  ?

• H01M 4/583 - Matériau carboné, p.ex. composés au graphite d'intercalation ou CFx
• H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
• H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
• H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
• H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p.ex. LiMn2O4 ou LiMn2OxFy

Abrégé

A gas detection device according to an embodiment includes a first irradiation part configured to irradiate a first light having a first wavelength on a gas released into a space, a second irradiation part configured to irradiate, on the gas, a second light having a second wavelength that is less than the first wavelength, an irradiation position adjustment part configured to control an irradiation position of the first light on the gas, a gas analysis part configured to analyze a component of the gas based on the first light having passed through the gas, and a gas visualization part configured to visualize a concentration distribution of the gas based on the second light having passed through the gas. The irradiation position adjustment part controls the irradiation position of the first light on the gas based on the visualized concentration distribution of the gas.

Classes IPC  ?

• G01N 21/3504 - Couleur; Propriétés spectrales, c. à d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p.ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse des gaz, p.ex. analyse de mélanges de gaz

Abrégé

A semiconductor device of an embodiment includes a lead frame; a first bonding material; a semiconductor chip including a lower surface, an upper surface, a first electrode connected to the first bonding material, a second electrode provided on the upper surface, and electrode pads connected to the second electrode; second bonding materials provided on each of the electrode pads; and a first connector connected to at least one of the second bonding materials, wherein the second bonding material which is not connected to the first connector is not connected to a connector or a wire.

Classes IPC  ?

• H01L 23/495 - Cadres conducteurs
• H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide

Abrégé

An acoustic control apparatus includes a processor with hardware. The processor calculates a first relational expression between acoustic filter coefficients of acoustic filters to be applied to voice signals containing information of sounds played back by two or more sound sources, based on an amplification magnification in a sound amplification control point with respect to the sounds played back by the two or more sound sources, and on transfer functions between the sound amplification control point and the two or more sound sources. The processor calculates a second relational expression between the acoustic filter coefficients, based on information of a frequency of the voice signals, and on an interval between the two or more sound sources. The processor calculates the acoustic filter coefficients based on the first relational expression and the second relational expression.

Classes IPC  ?

• G06F 3/16 - Entrée acoustique; Sortie acoustique
• G10L 15/22 - Procédures utilisées pendant le processus de reconnaissance de la parole, p.ex. dialogue homme-machine 

Abrégé

A semiconductor device includes first to second electrodes, and first to fifth semiconductor regions. The second semiconductor region is located on the first semiconductor region and is of the first conductivity type. The third semiconductor region is located on a portion of the second semiconductor region and is of the first conductivity type. The third semiconductor region has a higher first-conductivity-type impurity concentration than the second semiconductor region. The fourth semiconductor region is located on the second and third semiconductor regions and is of a second conductivity type. The fifth semiconductor region is located on a portion of the fourth semiconductor region and is of the second conductivity type. The fifth semiconductor region has a higher second-conductivity-type impurity concentration than the fourth semiconductor region. At least a portion of the fifth semiconductor region is positioned above at least a portion of the third semiconductor region.

Classes IPC  ?

• H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/861 - Diodes

Abrégé

According to one embodiment, a communication system comprises a transmitter device and receiver devices. The transmitter device transmits data and identification information. The identification information comprises first information indicative of a communication mode and second information indicative of a receiver device of a transmission destination data. Each of the receiver devices determines whether the receiver device receives the data based on at least a part of the second information.

Classes IPC  ?

• H04W 56/00 - Dispositions de synchronisation
• H04W 72/00 - Gestion des ressources locales

Abrégé

In one embodiment, electronic circuitry comprises a first circuit capable of transmitting and receiving signals, a second circuit capable of transmitting and receiving signals, and an insulation element. The first circuit has a first terminal to which a first clock signal is input, increases the frequency of the first clock signal to generate a second clock signal, and transmits the second clock signal. The insulation element transmits the second clock signal obtained from the first circuit to the second circuit as a third clock signal. The second circuit receives the third clock signal from the insulation element, and transmits a first data signal in response to the third clock signal. The insulation element transmits the first data signal obtained from the second circuit as a second data signal. The first circuit receives the second data signal from the insulation element.

Classes IPC  ?

• G06F 1/12 - Synchronisation des différents signaux d'horloge
• H03K 17/691 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ avec une isolation galvanique entre le circuit de commande et le circuit de sortie utilisant un couplage par transformateur
• G06F 1/10 - Répartition des signaux d'horloge

Abrégé

According to one embodiment, a read and write (RW) parameter adjustment method includes changing conditions of RW parameters to determine a capacity and characteristics for each of various heads of a test device to measure the characteristics and creating, for each of the heads, a database in which the measured characteristics are registered, and changing the conditions of the RW parameters for each of heads of a device to be adjusted to measure characteristics, searching the database created for each of the heads for a database having similar characteristics, and setting the capacity and characteristics in an appropriate balance based on the similar characteristics of the database obtained by the searching.

Classes IPC  ?

• G11B 5/012 - Enregistrement, reproduction ou effacement sur des disques magnétiques

Abrégé

According to one embodiment, electronic circuitry includes a transmission circuit to output a waveform including a plurality of pulse waveforms in response to an input signal. The pulse waveforms include a first transmit pulse waveform, and a second transmit pulse waveform following the first transmit pulse waveform, and the first transmit pulse waveform is larger in amplitude than the second transmit pulse waveform.

Classes IPC  ?

• H03K 3/012 - Modifications du générateur pour améliorer le temps de réponse ou pour diminuer la consommation d'énergie
• H03H 11/04 - Réseaux sélectifs en fréquence à deux accès

Abrégé

A method of synchronizing clocks of a secondary node and primary node, the method comprising: the primary node transmitting a first message and an indication of that message’s transmission time to the secondary node; the secondary node transmitting a second message to the primary node; the primary node transmitting a third message and an indication of that message’s transmission time to the secondary node; the secondary node calculating a rate of its clock relative to the clock of the primary node using a ratio of times between the transmission and reception times of the first and third messages; and the secondary node calculating a time offset of its clock relative to the clock of the primary node using the calculated rate, a propagation delay and one of the indications of the transmission times of the first or third message.

Classes IPC  ?

• H04W 56/00 - Dispositions de synchronisation

Abrégé

A magnetic material according to an embodiment includes at least one first element X selected from the group consisting of Fe, Co and Ni; a matrix phase; and a particle including C and at least one second element Y selected from Ta, W, Nb and Mo.

Classes IPC  ?

• H01F 1/147 - Alliages caractérisés par leur composition
• H02K 1/02 - MACHINES DYNAMO-ÉLECTRIQUES - Détails du circuit magnétique caractérisés par le matériau magnétique
• C22C 38/10 - Alliages ferreux, p.ex. aciers alliés contenant du cobalt
• C22C 38/02 - Alliages ferreux, p.ex. aciers alliés contenant du silicium 
• C22C 38/12 - Alliages ferreux, p.ex. aciers alliés contenant du tungstène, du tantale, du molybdène, du vanadium ou du niobium

Abrégé

According to one embodiment, an active material is provided. The active material includes a primary particle including an Nb10Ti2O29 phase and at least one Nb-rich phase selected from an Nb14TiO37 phase and an Nb24TiO64 phase. In the primary particle, a ratio MNb/MTi of substance amount of niobium to titanium satisfies 5.0

Classes IPC  ?

• H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p.ex. LiTi2O4 ou LiTi2OxFy
• H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
• H01M 50/296 - Montures; Boîtiers secondaires ou cadres; Bâtis, modules ou blocs; Dispositifs de suspension; Amortisseurs; Dispositifs de transport ou de manutention; Supports caractérisés par les bornes des blocs de batterie
• H01M 50/284 - Montures; Boîtiers secondaires ou cadres; Bâtis, modules ou blocs; Dispositifs de suspension; Amortisseurs; Dispositifs de transport ou de manutention; Supports comprenant l’insertion de cartes de circuits, p.ex. de cartes de circuits imprimés

Abrégé

According to one embodiment, a sensor includes an element part. The element part includes a base body, a first detection support part fixed to the base body, a first detection connection part including a first connection resistance layer and supported by the first detection support part, a first support part fixed to the base body, a first structure body, a first connection part, and a film part. The first structure body includes a first end part and a first other end part. The first end part is supported by the first support part. The first connection part is supported by the first other end part. The film part includes a first detection part and a first part. The first detection part is supported by the first detection connection part. The first part is supported by the first connection part. The film part includes a film part resistance layer.

Classes IPC  ?

• G01L 1/14 - Mesure des forces ou des contraintes, en général en mesurant les variations de la capacité ou de l'inductance des éléments électriques, p.ex. en mesurant les variations de fréquence des oscillateurs électriques
• G01L 9/00 - Mesure de la pression permanente, ou quasi permanente d’un fluide ou d’un matériau solide fluent par des éléments électriques ou magnétiques sensibles à la pression; Transmission ou indication par des moyens électriques ou magnétiques du déplacement des éléments mécaniques sensibles à la pression, utilisés pour mesurer la pression permanente ou quasi permanente d’un fluide ou d’un matériau solide fluent
• B81B 3/00 - Dispositifs comportant des éléments flexibles ou déformables, p.ex. comportant des membranes ou des lamelles élastiques

Abrégé

According to one embodiment, a sensor includes a first element including a first resistance member and a first conductive member, a second element including a second resistance member, and a third resistance member connected in series with the second resistance member. An absolute value of a third temperature coefficient of a third resistance of the third resistance member is smaller than an absolute value of a first temperature coefficient of a first resistance of the first resistance member. The absolute value of the third temperature coefficient is smaller than an absolute value of a second temperature coefficient of the second resistance member. The third resistance is lower than the second resistance.

Classes IPC  ?

• G01N 25/18 - Recherche ou analyse des matériaux par l'utilisation de moyens thermiques en recherchant la conductivité thermique
• G01K 7/16 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs

Abrégé

According to one embodiment, a sensor includes a first detection element, and a controller. The first detection element includes a base body, a first support portion, a first movable member, a first detection electrode, and a first counter detection electrode. The first support portion is fixed to the base body. The first movable member is supported by the first support portion. The first detection electrode and the first counter detection electrodes are fixed to the base body. The first movable member includes a first movable portion. The first movable portion includes a first beam, a first conductive extending portion, and a first connecting portion. The first conductive extending portion includes a first extending portion, a first extending other portion, and a first extending intermediate. The first extending portion is between the first detection electrode and the first counter detection electrodes. The controller includes a first differential circuit.

Classes IPC  ?

• G01C 19/5712 - Dispositifs sensibles à la rotation utilisant des masses vibrantes, p.ex. capteurs vibratoires de vitesse angulaire basés sur les forces de Coriolis utilisant des masses entraînées dans un mouvement de rotation alternatif autour d'un axe les dispositifs comportant une structure micromécanique

Abrégé

A neural network apparatus according to an embodiment includes neuron circuits, synaptic circuits, and a control circuit. A firing circuit of each neuron circuit outputs a firing signal when absolute value of the internal potential is larger than a firing threshold. A firing threshold adjustment circuit of each neuron circuit changes the firing threshold in accordance with frequency of the firing signal. When the firing signal is output from a pre-synaptic neuron circuit, the synaptic circuit changes the synaptic weight in accordance with a contrast between a learning threshold and the absolute value of the internal potential held in a post-synaptic neuron circuit. The control circuit changes the learning threshold in accordance with frequency of the firing signal from a target neuron circuit. The learning threshold is used for changing the synaptic weight stored in one or more synaptic circuits each outputting the output signal to the target neuron.

Classes IPC  ?

• G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
• G06N 3/08 - Méthodes d'apprentissage

Abrégé

According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including Alx1Ga1-×1N (0 < x1 ≤ 1), a second nitride region including Alx2Ga1-x2N (0 ≤ x2 < 1), and an intermediate region being between the first nitride region and the second nitride region. In a first direction from the first nitride region to the second nitride region, an oxygen concentration in the nitride member has a peak value at a first position included in the intermediate region. The peak value is 4.9 times or more a first oxygen concentration in the first nitride region. A second carbon concentration in the second nitride region is higher than a first carbon concentration in the first nitride region.

Classes IPC  ?

• H01L 29/66 - Types de dispositifs semi-conducteurs
• H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
• H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT

Abrégé

According to one embodiment, a semiconductor device includes a first transistor, a first circuit, a second circuit, and a third circuit. The first transistor has one end connected to a power supply voltage terminal, the other end connected to a first node, and a gate connected to a first output terminal. The first circuit is configured to control a voltage of the first node based on a voltage of a ground voltage terminal. The second circuit is configured to control a voltage of the first output terminal based on the voltage of the ground voltage terminal and a voltage of an input terminal. The third circuit is configured to control switching between connection and disconnection between the ground voltage terminal and the first circuit.

Classes IPC  ?

• H03K 17/06 - Modifications pour assurer un état complètement conducteur
• H03K 17/081 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension sans réaction du circuit de sortie vers le circuit de commande

Abrégé

A parallel receiver module includes a plurality of signal transmission lines arranged in a first direction; and a receiving semiconductor chip including a plurality of receiving channels arranged in the first direction. The plurality of receiving channels includes receiving circuits configured to receive signals from the signal transmission lines. At least one receiving channel among the plurality of receiving channels further includes a monitor circuit monitoring a receiving level of the signal from the signal transmission line. The at least one receiving channel is connectable with the signal transmission line by switching between the receiving circuit and the monitor circuit.

Classes IPC  ?

• H04B 10/2507 - Dispositions spécifiques à la transmission par fibres pour réduire ou éliminer la distorsion ou la dispersion
• H04B 10/079 - Dispositions pour la surveillance ou le test de systèmes de transmission; Dispositions pour la mesure des défauts de systèmes de transmission utilisant un signal en service utilisant des mesures du signal de données
• H04Q 11/00 - Dispositifs de sélection pour systèmes multiplex
• H04B 10/60 - Récepteurs

Abrégé

According to one embodiment, a first region surrounded by a bridge inner circumferential edge, a bridge center line, a circumscribed circle of a rotor core, and an inner wall of a first magnet hole and a second region surrounded by the bridge inner circumferential edge, the bridge center line, the circumscribed circle of the rotor core, and an inner wall of a second magnet hole are asymmetrical with respect to a d-axis, and the rotor core has a structure satisfying the following equation. According to one embodiment, a first region surrounded by a bridge inner circumferential edge, a bridge center line, a circumscribed circle of a rotor core, and an inner wall of a first magnet hole and a second region surrounded by the bridge inner circumferential edge, the bridge center line, the circumscribed circle of the rotor core, and an inner wall of a second magnet hole are asymmetrical with respect to a d-axis, and the rotor core has a structure satisfying the following equation. ∑ S km r m r bm   sin θ bkm − θ km = ∑ S jn R n R bn   sin θ bjn − θ jn

Classes IPC  ?

• H02K 1/276 - Aimants encastrés dans le noyau magnétique, p.ex. aimants permanents internes [IPM]

Abrégé

According to one embodiment, a source device generates a multistream signal transmitted to a plurality of sink devices which are connected by daisy-chaining and generates the multistream signal by associating daisy chain stage numbers of the sink devices with contents streams for the sink devices.

Classes IPC  ?

• H04N 21/438 - Interfaçage de la voie descendante du réseau de transmission provenant d'un serveur, p.ex. récupération de paquets MPEG d'un réseau IP

Abrégé

According to an embodiment, an information processing device includes one or more processors. The processors calculate a first degree of influence of a plurality of variables on output data, and a frequency at which the plurality of variables are selected as a variable influencing the output data, based on K first models. The K first models are models estimated using a plurality of pieces of input data including the plurality of variables. The plurality of input data are obtained in K periods. K is an integer of 2 or more. The first model receives input of the input data including the plurality of variables and outputs the output data. The processors output the first degree of influence and the frequency in association with each other.

Classes IPC  ?

• G05B 19/4155 - Commande numérique (CN), c.à d. machines fonctionnant automatiquement, en particulier machines-outils, p.ex. dans un milieu de fabrication industriel, afin d'effectuer un positionnement, un mouvement ou des actions coordonnées au moyen de données d'u caractérisée par le déroulement du programme, c.à d. le déroulement d'un programme de pièce ou le déroulement d'une fonction machine, p.ex. choix d'un programme

Abrégé

According to the present embodiment, a light receiving device includes a plurality of pixels. Each of the pixels includes a photoelectric conversion element configured to be able to detect incidence of a photon and a power supply portion configured to change an applied voltage applied across both ends of the photoelectric conversion element.

Classes IPC  ?

• G01S 7/4863 - Réseaux des détecteurs, p.ex. portes de transfert de charge
• G01S 17/931 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour prévenir les collisions de véhicules terrestres
• G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
• H01L 31/02 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails - Détails

Abrégé

A semiconductor device includes: a drain electrode including a plurality of drain finger parts; a source electrode including a plurality of source finger parts and a Kelvin source part electrically connected with the source finger parts; a sense electrode positioned between a drain finger part and the Kelvin source part, which are next to each other in a particular direction; and a gate electrode positioned between a drain finger part and a source finger part, which are next to each other in the particular direction, and between a drain finger part and the sense electrode, which are next to each other in the particular direction. The sense electrode and the Kelvin source part are electrically connected via a sense resistance due to a spacing between the sense electrode and the Kelvin source part in the particular direction.

Classes IPC  ?

• H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
• H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
• H01L 29/205 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV comprenant plusieurs composés dans différentes régions semi-conductrices
• H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
• G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe

Abrégé

A semiconductor device includes a substrate; a holding member located on the substrate, the holding member including an optical fiber holding part and a module placement part arranged in a first direction; an optical module located in the module placement part and mounted on the substrate; an optical fiber passing through the optical fiber holding part, the optical fiber being connected with the optical module; and a first leaf spring and a second leaf spring located in the optical fiber holding part, the first leaf spring and the second leaf spring holding the optical fiber between the first leaf spring and the second leaf spring in a direction crossing the first direction.

Classes IPC  ?

• G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
• H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides

Abrégé

A semiconductor device includes an insulating layer, a semiconductor layer on the insulating layer, and a control electrode on the semiconductor layer. The semiconductor layer includes first and second semiconductor parts and a separation trench between the first and second semiconductor parts. The first and second semiconductor parts extending along the insulating film. The first semiconductor part includes first and second regions of a first conductivity type, and a fifth region of a second conductivity type between the first and second regions. The second semiconductor part includes third and fourth regions of the second conductivity type, and a sixth region of the second conductivity type between the third and fourth regions. The control electrode extends over the fifth and sixth regions. The semiconductor layer further including a seventh region of the second conductivity type at a bottom of the separation trench and electrically connecting the fifth and sixth regions.

Classes IPC  ?

• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/66 - Types de dispositifs semi-conducteurs
• H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
• H01L 23/66 - Adaptations pour la haute fréquence

Abrégé

According to one embodiment, a semiconductor device includes first and second electrodes, first to fifth semiconductor regions, and a gate electrode. The first semiconductor region is provided on the first electrode, and electrically connected to the first electrode. The second semiconductor region is provided on a part of the first semiconductor region. The third semiconductor region is provided on another part of the first semiconductor region. The third semiconductor region includes first and second regions. The fourth semiconductor region is provided on the second semiconductor region. The fifth semiconductor region is provided on a part of the fourth semiconductor region. The gate electrode faces the fourth semiconductor region with a gate insulating layer interposed between the gate electrode and the fourth semiconductor region. The second electrode is provided on the fourth and fifth semiconductor regions. The second electrode is electrically connected to the fourth and fifth semiconductor regions.

Classes IPC  ?

• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/66 - Types de dispositifs semi-conducteurs

Abrégé

According to one embodiment, a sensor includes a stage, a driver, and a detector. The stage includes a first portion and a second portion. The driver is configured to rotate the stage. A rotation axis of the stage passes through the first portion and is along a first direction. A second direction from the first portion to the second portion crosses the first direction. The second portion is configured to rotate along a circumferential direction with the rotation axis as a center when the stage rotating. The detector is provided at the second portion. The detector includes a first detection element configured to detect a first acceleration including a component along the second direction, and a second detection element configured to detect a second acceleration including a component along the first direction.

Classes IPC  ?

• G01P 15/093 - Mesure de l'accélération; Mesure de la décélération; Mesure des chocs, c. à d. d'une variation brusque de l'accélération en ayant recours aux forces d'inertie avec conversion en valeurs électriques ou magnétiques au moyen de capteurs photo-électriques

Abrégé

A semiconductor device includes a substrate, a first chip, a second chip, a first connector, and a second connector. The substrate has a second thickness. The first chip includes a first surface facing the substrate, a second surface positioned at a side opposite to the first surface, a first electrode located at the first surface and electrically connected to the substrate, and a second electrode located at the second surface. The second connector includes a first part positioned above the second chip. A difference between the second thickness and a first thickness of the first part is not more than 20% of the greater of the first thickness or the second thickness.

Classes IPC  ?

• H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide

Abrégé

According to one embodiment, an optical test apparatus includes a light convergence element, an optical filter, and an image sensor. The light convergence element converges light from a subject. The optical filter is arranged on an optical axis of the light convergence element. The image sensor is arranged in an effective region not crossing the optical axis of the light convergence element, and receives light passing through the light convergence element and the optical filter.

Classes IPC  ?

• G02B 5/20 - Filtres
• H04N 5/911 - Traitement du signal de télévision pour l'enregistrement pour la suppression du bruit

Abrégé

A carbon dioxide electrolytic device in an embodiment includes: an electrochemical reaction cell including: a first accommodation part that accommodates gas or a first electrolytic solution containing CO2; a second accommodation part that accommodates a second electrolytic solution containing H2O; a diaphragm provided between the first and second accommodation parts; a cathode that is in contact with the gas or the first electrolytic solution; and an anode that is in contact with the second electrolytic solution; a first supply part that supplies the gas or the first electrolytic solution to the first accommodation part; a second supply part that supplies the second electrolytic solution to the second accommodation part; and a carbon dioxide separation part that is connected to a discharge portion of a discharge containing O2 and CO2 from the second accommodation part and includes a cryogenic separation device to separate CO2 from a gas component in the discharge.

Classes IPC  ?

• C25B 15/08 - Alimentation ou vidange des réactifs ou des électrolytes; Régénération des électrolytes
• C25B 9/19 - Cellules comprenant des électrodes fixes de dimensions stables; Assemblages de leurs éléments de structure avec des diaphragmes
• C25B 1/04 - Hydrogène ou oxygène par électrolyse de l'eau
• C25B 1/23 - Oxyde de carbone ou gaz de synthèse
• C25B 3/26 - Réduction du dioxyde de carbone
• C12M 1/00 - Appareillage pour l'enzymologie ou la microbiologie

Abrégé

According to one embodiment, a semiconductor device includes first and second electrodes, first to sixth semiconductor regions, a gate electrode, and a conductive part. The first semiconductor region is located on the first electrode. The first semiconductor region includes first and second regions. The second semiconductor region is located on the first region. The gate electrode is located on the second semiconductor region with a gate insulating layer interposed. The third semiconductor region is located on the first region and is separated from the second semiconductor region. The conductive part is located on the third semiconductor region with an insulating layer interposed. The fourth semiconductor region is located on the second region. The fifth semiconductor region is located on a portion of the fourth semiconductor region. The sixth semiconductor region contacts the third semiconductor region. The second electrode is located on the fourth and fifth semiconductor regions.

Classes IPC  ?

• H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
• H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
• H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants

Abrégé

A semiconductor device includes a holding member including a component placement part; a back plate; a substrate including a mounting surface facing the holding member, and a back surface facing the back plate; a plurality of mounting pads located at the mounting surface; a package component including a terminal placement surface facing the mounting surface; and a plurality of package terminals located at the terminal placement surface. The substrate is held between the holding member and the back plate. The package component is located in the component placement part, and held between the holding member and the substrate. The package terminals are in direct contact with the mounting pads.

Classes IPC  ?

• H01L 23/12 - Supports, p.ex. substrats isolants non amovibles
• H01L 23/40 - Supports ou moyens de fixation pour les dispositifs de refroidissement ou de chauffage amovibles
• H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
• H01L 23/528 - Configuration de la structure d'interconnexion
• G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques

Abrégé

A semiconductor device includes a substrate; a holding member located on the substrate, the holding member including a module placement part and an opening arranged in a first direction; an optical module located in the module placement part and mounted on the substrate; and an optical fiber passing through the opening, the optical fiber being connected with the optical module. The holding member includes a first corner part and a second corner part. The opening is between the first corner part and the second corner part in a direction crossing the first direction. The first corner part and the second corner part are beveled.

Classes IPC  ?

• G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
• H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides

Abrégé

According to one embodiment, a magnetic disk device comprises a disk, a head that writes data to the disk and reads data from the disk, and a controller that controls a position of the head so as to write a first spiral servo pattern to the disk, and overwrite a second spiral servo pattern different from the first spiral servo pattern by shifting in a radial direction of the disk from the first spiral servo pattern.

Classes IPC  ?

• G11B 5/596 - Disposition ou montage des têtes par rapport aux supports d'enregistrement comportant des dispositions pour déplacer la tête dans le but de maintenir l'alignement relatif de la tête et du support d'enregistrement pendant l'opération de transduction, p.ex. pour compenser les irrégularités de surface ou pour suivre les pistes pour suivre les pistes d'un disque

Abrégé

A distance between outermost parts of alignment chips in a direction normal to a surface of a substrate is different between a first direction and a second direction along terminal placement surfaces. The plurality of alignment chips include a first alignment chip fixed to a first metal pad, and a second alignment chip fixed to a second metal pad. The first alignment chip and the second alignment chip are oriented in different directions on the surface of the substrate. A semiconductor module includes a first side surface part extending in the second direction and facing the first alignment chip, and a groove part formed in a portion of the first side surface part. A portion of the second alignment chip is positioned in the groove part.

Classes IPC  ?

• H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide

Abrégé

According to one embodiment, a photodetector includes a first conductive layer, a second conductive layer, and an organic layer provided between the first conductive layer and the second conductive layer. The organic layer includes a first region and a second region. The second region is provided between the first region and the second conductive layer. The first region includes a first compound and a second compound. The first compound includes a first mother skeleton. The second region includes the first compound and a third compound. The third compound includes the first mother skeleton. The third compound is different from the first compound. The second region does not include the second compound, or a concentration of the second compound in the second region is lower than a concentration of the second compound in the first region.

Classes IPC  ?

• G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation
• C07F 5/02 - Composés du bore

Abrégé

According to an embodiment, an inference system includes a recurrent neural network circuit, an inference neural network, and a control circuit. The recurrent neural network circuit receives M input signals and outputs N intermediate signals, where M is an integer of 2 or more and N is an integer of 2 or more. The inference neural network circuit receives the N intermediate signals and outputs L output signals, where L is an integer of 2 or more. The control circuit adjusts a plurality of coefficients that are set to the recurrent neural network circuit and adjusts a plurality of coefficients that are set to the inference neural network circuit. The control circuit adjusts the coefficients set to the recurrent neural network circuit according to a total delay time period from timing for applying the M input signals until timing for firing the L output signals.

Classes IPC  ?

• G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
• G06N 3/08 - Méthodes d'apprentissage
• G06N 3/049 - Réseaux neuronaux temporels, p.ex. éléments à retard, neurones oscillants ou entrées impulsionnelles
• G06N 3/044 - Réseaux récurrents, p.ex. réseaux de Hopfield

Abrégé

According to an embodiment, a reading system includes a reader and a calculator. The reader reads, from a character image, a character that is displayed by a segment display. The calculator performs one of first, second, third, or fourth processing. In the first processing, the calculator calculates a first score based on a state of pixels of the character. In the second processing, the calculator calculates a second score based on a match ratio between the pixels and the extracted pixels. In the third processing, the calculator calculates a third score based on a ratio of a length of the character image in first and second direction. In the fourth processing, the calculator calculates a fourth score based on a comparison result between the detected result and preset patterns. The calculator calculates a certainty of the reading by using one of the first, second, third, or fourth score.

Classes IPC  ?

• G06V 20/62 - Texte, p.ex. plaques d’immatriculation, textes superposés ou légendes des images de télévision
• G06F 18/22 - Critères d'appariement, p.ex. mesures de proximité
• G06V 30/168 - Lissage ou élagage de la forme; Squelettisation

Abrégé

A semiconductor device includes a semiconductor part, first to third electrodes, a control electrode and first to third insulating films. The semiconductor part is provided between the first and second electrodes. The third electrode extends in a first direction inside a trench of the semiconductor part. The control electrode is provided inside the trench at an opening side thereof. The control electrode includes first and second control portions arranged in a second direction crossing the first direction. The third electrode has an end portion between the first and second control portions. The first insulating film is provided between the semiconductor part and the third electrode. The second insulating film is provided between the semiconductor part and the control electrode. The third insulating film covers the end portion of the third electrode. The first insulating film includes an extending portion extending between the third insulating film and the control electrode.

Classes IPC  ?

• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/40 - Electrodes
• H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter

Abrégé

A semiconductor device includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a gate wiring provided on the first insulating film, and a source electrode provided on the first insulating film. The device further includes a second insulating film provided on the gate wiring and the source electrode and including a portion sandwiched between the gate wiring and the source electrode, and a drain electrode provided below the semiconductor layer. Further, an upper surface of the first insulating film includes a first region having a first concentration of phosphorus and a second region having a second concentration of phosphorus that is higher than the first concentration. The first region is present between the semiconductor layer and the gate wiring or the source electrode, and the second region is present between the semiconductor layer and the portion of the second insulating film.

Classes IPC  ?

• H01L 29/49 - Electrodes du type métal-isolant-semi-conducteur
• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/40 - Electrodes
• H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
• H01L 29/66 - Types de dispositifs semi-conducteurs

Abrégé

According to one embodiment, a detector includes an element portion. The element portion includes a first detection portion and a wiring portion. The first detection portion includes a first electrode, a first counter electrode, and a first organic semiconductor layer. At least a part of the first organic semiconductor layer is between the first electrode and the first counter electrode. The wiring part includes a first electrode layer electrically connected with the first electrode, a first counter electrode layer electrically connected with the first counter electrode, and a first conductive layer. The first counter electrode layer is between the first electrode layer and the first detection portion in a first direction from the first electrode layer to the first counter electrode layer. The first conductive layer is between the first electrode layer and the first counter electrode layer in the first direction.

Classes IPC  ?

• G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
• H01L 51/44 - Dispositifs à l'état solide qui utilisent des matériaux organiques comme partie active, ou qui utilisent comme partie active une combinaison de matériaux organiques et d'autres matériaux; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de tels dispositifs ou de leurs parties constitutives spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement en énergie électrique, soit comme dispositifs de commande de l'énergie électrique par ledit rayonnement - Détails des dispositifs
• G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation

Abrégé

A microcontroller with a slew-rate control circuit according to an embodiment includes a pre-drive circuit configured to charge and discharge a gate of an output power transistor with a constant current, a measuring circuit configured to measure a transition time period during which a drain-to-source voltage of the output power transistor makes a transition between a first voltage and a second voltage, and a microprocessor. The microprocessor controls a constant current set value of the pre-drive circuit such that the transition time period is a predetermined time period.

Classes IPC  ?

• H02M 1/00 - APPAREILS POUR LA TRANSFORMATION DE COURANT ALTERNATIF EN COURANT ALTERNATIF, DE COURANT ALTERNATIF EN COURANT CONTINU OU VICE VERSA OU DE COURANT CONTINU EN COURANT CONTINU ET EMPLOYÉS AVEC LES RÉSEAUX DE DISTRIBUTION D'ÉNERGIE OU DES SYSTÈMES D'ALI; TRANSFORMATION D'UNE PUISSANCE D'ENTRÉE EN COURANT CONTINU OU COURANT ALTERNATIF EN UNE PUISSANCE DE SORTIE DE CHOC; LEUR COMMANDE OU RÉGULATION - Détails d'appareils pour transformation
• H02M 1/088 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques pour la commande simultanée de dispositifs à semi-conducteurs connectés en série ou en parallèle
• H02M 1/36 - Moyens pour mettre en marche ou arrêter les convertisseurs

Abrégé

The super junction structure part includes a plurality of n-type pillars having higher impurity concentrations than the second layer, a plurality of p-type pillars having higher impurity concentrations than the second layer, and a boundary region positioned between the n-type pillar and the p-type pillar in a second direction orthogonal to the first direction, the boundary region extending in the first direction continuously from the second layer, the boundary region having a lower impurity concentration than the n-type pillars and the p-type pillars.

Classes IPC  ?

• H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
• H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter

Abrégé

According to one embodiment, a calculation device includes a processing device configured to perform a processing procedure. The processing procedure includes a first update of a first vector, a second update of a second vector, and a third update of a third vector. The first update includes updating the first vector using the second vector and the third vector. The second update includes updating the second vector using the first vector. The processing device is configured to output an output of at least one of the first vector obtained after repeating the processing procedure or a function of the first vector obtained after the repeating the processing procedure.

Classes IPC  ?

• G06F 17/16 - Calcul de matrice ou de vecteur
• G06F 7/509 - Addition; Soustraction en mode parallèle binaire, c. à d. ayant un circuit de maniement de chiffre différent pour chaque position pour opérandes multiples, p.ex. intégrateurs numériques
• G06F 7/483 - Calculs avec des nombres représentés par une combinaison non linéaire de nombres codés, p.ex. nombres rationnels, système de numération logarithmique ou nombres à virgule flottante

Abrégé

According to one embodiment, a sensor includes a base body, a first fixed portion, a movable portion, and first and second fixed electrodes. The first fixed portion is fixed to the base body. The movable portion is supported by the first fixed portion. The movable portion includes annular portions and connecting portions. The annular portions are concentric with the first fixed portion as a center in a first plane. One of the connecting portions connects one of the annular portions and an other one of the annular portions. The annular portions include first to third annular portions. The second annular portion includes a first movable portion electrode. The first fixed electrode is fixed to the base body and faces a part of the first annular portion. The second fixed electrode is fixed to the base body and faces the first movable portion electrode.

Classes IPC  ?

• G01C 19/60 - Gyromètres à résonance magnétique nucléaire ou électronique

Abrégé

A solid-state imaging device includes a substrate having a major surface, a photodiode for near infrared light disposed on the major surface and configured to detect near infrared light, and a stacked filter disposed on the photodiode for near infrared light and configured to remove visible light. The stacked filter includes a red filter configured to transmit red light and the near infrared light and remove light other than the red light and the near infrared light, a green filter configured to transmit green light and the near infrared light and remove light other than the green light and the near infrared light, and a blue filter configured to transmit blue light and the near infrared light and remove light other than the blue light and the near infrared light. The red filter, the green filter, and the blue filter are stacked above the photodiode for near infrared light.

Classes IPC  ?

• H01L 27/146 - Structures de capteurs d'images
• H04N 5/33 - Transformation des rayonnements infrarouges

Abrégé

An image processing apparatus has a light source that emits a light signal at a predetermined time interval, a scanner capable of changing at least one of a scanning range or a scanning timing of the light signal for each of frames, a light receiver that receives a reflected light signal reflected on an object by irradiating the object with the light signal, processing circuitry that generates a distance image for each of the frames based on the reflected light signal received by the light receiver, and synthesizes the distance images of a plurality of the frames to generate a high-resolution distance image.

Classes IPC  ?

• G06T 5/50 - Amélioration ou restauration d'image en utilisant plusieurs images, p.ex. moyenne, soustraction
• G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p.ex. caméras à temps de vol ou lidar flash
• G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
• G01S 7/4865 - Mesure du temps de retard, p.ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
• G06T 5/00 - Amélioration ou restauration d'image
• G06T 7/246 - Analyse du mouvement utilisant des procédés basés sur les caractéristiques, p.ex. le suivi des coins ou des segments
• G06V 10/40 - Extraction de caractéristiques d’images ou de vidéos

Abrégé

According to one embodiment, a magnetic disk device comprising a magnetic disk, a magnetic head, and a controller that registers an address and a positioning error, determines whether or not a positioning error of a second sector that is two tracks ahead in a radial direction of a first sector to which a data is written is registered, and when the positioning error of the second sector is registered, sets a first threshold that allows a write operation for a positioning error of the first sector based on the positioning error of the second sector, and determines whether or not the positioning error of the first sector exceeds the first threshold, and stops the write operation when the positioning error of the first sector exceeds the first threshold.

Classes IPC  ?

• G11B 5/012 - Enregistrement, reproduction ou effacement sur des disques magnétiques
• G11B 21/10 - Recherche de la piste ou alignement par déplacement de la tête

Abrégé

According to one embodiment, a magnetic disk device includes a magnetic disk, a magnetic head, an actuator, a controller, and a ramp. The magnetic head is configured to record data on and reproduce data from the magnetic disk. The actuator is configured to move the magnetic head relative to the magnetic disk. The controller is configured to control the actuator. The ramp is configured to hold the magnetic head. The controller is configured to, in a retract operation for causing the actuator to retract the magnetic head to the ramp, alternate detection of a back electromotive force of the actuator and application of a voltage corresponding to the back electromotive force to the actuator, and skip the detection of the back electromotive force a predetermined number of times in response to an event that the magnetic head moves at a speed outside a predetermined range.

Classes IPC  ?

• G11B 21/08 - Changement ou sélection de piste

Abrégé

Systems and methods for scheduling the execution of disk access commands in a split-actuator hard disk drive are provided. In some embodiments, while a first actuator of the split actuator is in the process of performing a first disk access command (a victim operation), a second disk access command (an aggressor operation) is selected for and executed by a second actuator of the split actuator. The aggressor operation is selected from a queue of disk access commands for the second actuator, and is selected based on being the disk access command in the queue that can be initiated sooner than any other disk access command in the queue without disturbing the victim operation.

Classes IPC  ?

• G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement

Abrégé

A quantum communication system comprising: an transmitter and a receiver, the transmitter comprising transmitter components the transmitter components comprising a source of pulsed radiation and a modulation unit, the modulation unit being configured to randomly encode pulses of radiation; and a receiver comprising receiver components, the receiver components comprising a demodulator and detector configured to decode and detect said randomly encoded pulses, the system further comprising a control unit and an optimisation unit, the control unit being configured to apply a plurality of control signals defined by a set of control parameters to at least one of said transmitter components and receiver components, the optimization unit being configured to tune the set of control parameters, wherein the optimisation unit sets the control parameters by: obtaining a score indicating the quality of the system corresponding to a first set of control parameters; and estimating a further set of control parameters suitable via an iterative process to obtain a tuned set of control parameters.

Classes IPC  ?

• H04B 10/079 - Dispositions pour la surveillance ou le test de systèmes de transmission; Dispositions pour la mesure des défauts de systèmes de transmission utilisant un signal en service utilisant des mesures du signal de données
• H04B 10/50 - Systèmes de transmission utilisant des ondes électromagnétiques autres que les ondes hertziennes, p.ex. les infrarouges, la lumière visible ou ultraviolette, ou utilisant des radiations corpusculaires, p.ex. les communications quantiques Émetteurs
• H04B 10/60 - Récepteurs
• H04L 9/08 - Répartition de clés

Abrégé

A cold storage material particle of an embodiment includes at least one first element selected from the group consisting of a rare earth element, silver (Ag), and copper (Cu) and a second element that is different from the first element and forms a multivalent metal ion in an aqueous solution, in which an atomic concentration of the second element is 0.001 atomic % or more and 60 atomic % or less, and a maximum value of volume specific heat at a temperature of 20K or less is 0.3 J/cm3·K or more.

Classes IPC  ?

• C09K 5/14 - Substances solides, p.ex. pulvérulentes ou granuleuses
• F28D 20/00 - Appareils ou ensembles fonctionnels d'accumulation de chaleur en général; Appareils échangeurs de chaleur de régénération non couverts par les groupes ou
• G01R 33/38 - Systèmes pour produire, homogénéiser ou stabiliser le champ magnétique directeur ou le champ magnétique à gradient
• C04B 35/50 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base de composés de terres rares
• C04B 35/45 - Produits céramiques mis en forme, caractérisés par leur composition; Compositions céramiques; Traitement de poudres de composés inorganiques préalablement à la fabrication de produits céramiques à base d'oxydes à base d'oxyde de cuivre ou de ses solutions solides avec d'autres oxydes
• C04B 35/626 - Préparation ou traitement des poudres individuellement ou par fournées
• C04B 35/636 - Polysaccharides ou leurs dérivés
• C04B 35/624 - Traitement sol-gel
• C04B 35/64 - Procédés de cuisson ou de frittage
• H01F 6/00 - Aimants supraconducteurs; Bobines supraconductrices

Abrégé

According to one embodiment, a rotating electric machine rotor includes a shaft rotating about the center axis line, a rotor core coaxially fixed to the shaft, and a polyhedral permanent magnet housed in a slot portion passing through the rotor core in a direction along the center axis line. The permanent magnet has a face portion through which adjacent magnets can face and contact each other in the slot portion in which the permanent magnet is housed. The face portion is provided with a surface layer portion having an electric resistance value that is two or more times the electric resistance value of the face portion of the permanent magnet.

Classes IPC  ?

• H02K 1/276 - Aimants encastrés dans le noyau magnétique, p.ex. aimants permanents internes [IPM]
• H02K 21/16 - Moteurs synchrones à aimants permanents; Génératrices synchrones à aimants permanents avec des induits fixes et des aimants tournants avec des aimants tournant à l'intérieur des induits avec des noyaux d'induits annulaires à pôles saillants

Abrégé

According to one embodiment, a rotor includes a rotor iron core, a plurality of first magnet accommodation, a plurality of first permanent magnets, a pair of first inner circumferential side magnetic voids, a pair of first outer circumferential side magnetic voids, a pair of first bridge portions, a pair of second magnet accommodation areas, a plurality of second permanent magnets, a pair of second outer circumferential side magnetic voids, a pair of second inner circumferential side magnetic voids, a third magnetic void, and a pair of second bridge portions.

Classes IPC  ?

• H02K 1/276 - Aimants encastrés dans le noyau magnétique, p.ex. aimants permanents internes [IPM]

Abrégé

According to one embodiment, a semiconductor device, includes first to third electrodes, first to third layers, and an insulating member. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first layer includes first to fifth partial regions. The fourth partial region is located between the first and third partial regions. The fifth partial region is located between the third and second partial regions. The second layer includes a first compound region provided between the third partial region and the third electrode. The third layer includes first to third portions. The third portion is located between the third partial region and the first compound region. The insulating member includes a first insulating region. The first insulating region is located between the first compound region and the third electrode.

Classes IPC  ?

• H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
• H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV

Abrégé

According to one embodiment, an electrochemical device includes an electrochemical element, and a controller. The electrochemical element includes a first electrode, a second electrode, and a first member provided between the first electrode and the second electrode. The controller is electrically connected to the first electrode and the second electrode. The controller is configured to supply a first signal between the first electrode and the second electrode. The first signal includes a waveform repeating in a first period. The waveform includes a first duration of a first voltage of a first polarity, and a second duration of a second voltage of the first polarity. An absolute value of the second voltage is smaller than an absolute value of the first voltage.

Classes IPC  ?

• G01N 27/416 - Systèmes
• H02J 7/00 - Circuits pour la charge ou la dépolarisation des batteries ou pour alimenter des charges par des batteries