A semiconductor device includes a semiconductor die comprising a radio frequency (RF) circuit, a first dielectric layer disposed over a first surface of the semiconductor die, an antenna layer disposed over a surface of the first dielectric layer, and an antenna feeding structure coupling the antenna layer to the RF circuit of the semiconductor die, wherein the semiconductor die comprises a via, and the antenna feeding structure comprises a first portion arranged within the opening of the semiconductor die and extending to the first surface of the semiconductor die, and a second portion arranged through the first dielectric layer.
H01Q 1/22 - Supports; Moyens de montage par association structurale avec d'autres équipements ou objets
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 23/498 - Connexions électriques sur des substrats isolants
The disclosure is directed to the use of an externally-supplied control current to control the adjustment of an internal supply voltage generated via voltage regulator circuitry, which may be identified with an integrated circuit (IC) chip. The configuration of the voltage regulator circuitry functions to establish a linear relationship between the control current and the internal voltage supply. This configuration enables setting the control current to a predetermined value, causing the supply voltage to deviate in a predictable and controllable manner, and thus facilitating verification of the IC chip's internal voltage supply test circuitry. Furthermore, because the control current used for this purpose is relatively small (e.g. on the order of microamps), existing on chip test architecture, which may accommodate such low level currents, may be re-used for the selective routing of the control current for such IC testing.
G05F 1/46 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu
G05F 1/565 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final sensible à une condition du système ou de sa charge en plus des moyens sensibles aux écarts de la sortie du système, p.ex. courant, tension, facteur de puissance
3.
ELECTRONIC DEVICE AND ELECTRONIC SYSTEM WITH CRITICAL CONDITION DETECTION AND CONTROL CAPABILITY FOR POWER ELECTRONIC DEVICES
An electronic device includes an interface configured to receive telemetry information for one or more power semiconductor devices and a data acquisition and processing unit. The data acquisition and processing unit may be configured to increase a gate voltage above a maximum permitted level for each of the one or more power semiconductor devices having a current slew rate that exceeds a predetermined level as determined by the telemetry information. The data acquisition and processing unit may be configured to increase a gate voltage above a maximum permitted level for each of the one or more power semiconductor devices having a temperature that exceeds a predetermined level as determined by the telemetry information. An electronic system that includes the electronic device is also described.
H04Q 9/00 - Dispositions dans les systèmes de commande à distance ou de télémétrie pour appeler sélectivement une sous-station à partir d'une station principale, sous-station dans laquelle un appareil recherché est choisi pour appliquer un signal de commande ou
A transistor device includes: a semiconductor substrate having a doping concentration of a first dopant type; a highly doped source region of a second dopant type formed in a first surface of the semiconductor substrate; a first highly doped drain region of the second dopant type formed in the first surface; a gate structure arranged on the first surface and including a gate electrode formed on the first surface; and a first lightly doped region formed in the first surface and extending from the highly doped source region under the gate electrode. A channel region extends between the first lightly doped region and the highly doped drain region. The channel region has an average doping level of the first dopant type of n×10x that varies by less than 0.5×n×10X between the first lightly doped region and the highly doped drain region along the lateral direction parallel to the first surface.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
5.
ULTRASONIC TOUCH SENSORS AND CAPACITIVE PRESSURE SENSING MICROELECTROMECHANICAL SYSTEM FUSION
A touch sensor includes a touch structure including a touch interface and an inner interface arranged opposite to the touch interface; a capacitive ultrasonic transmitter arranged inside an enclosed interior volume and configured to transmit an ultrasonic transmit wave towards the touch structure; a capacitive ultrasonic receiver arranged inside the enclosed interior volume and configured to receive at least one ultrasonic reflected wave produced from the ultrasonic transmit wave via internal reflection; a coupling medium that fills an area between the inner interface and the capacitive ultrasonic receiver, wherein an external force applied to the touch interface is configured to impart an internal pressure onto the capacitive ultrasonic receiver through the coupling medium; and a sensor circuit configured to convert the at least one ultrasonic reflected wave into a measurement signal and detect the external force based on the measurement signal.
G06F 3/041 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction
G06F 3/043 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction utilisant la propagation d'ondes acoustiques
G06F 3/044 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction par des moyens capacitifs
6.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
A semiconductor device includes a transistor. The transistor includes gate trenches formed in a semiconductor substrate, extending in a first horizontal direction and patterning the semiconductor substrate into ridges. The ridges are arranged between two adjacent gate trenches, respectively. The transistor further includes a gate electrode arranged in at least one of the gate trenches, a source region of a first conductivity type, a channel region, and a drift region of the first conductivity type. The source region, channel region and a part of the drift region are arranged in the ridges. The gate electrode is insulated from the channel region and the drift region. The channel region includes a doped portion of a second conductivity type. A doping concentration of the doped portion decreases in a second horizontal direction intersecting the first horizontal direction from a region close to the gate electrode to a central portion of the ridge.
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
7.
MULTIPLE COBALT IRON BORON LAYERS IN A FREE LAYER OF A MAGNETORESISTIVE SENSING ELEMENT
A tunnel magnetoresistive (TMR) sensing element may include a free layer. The free layer of the TMR sensing element may include a first cobalt iron boron (CoFeB) layer, an interlayer over the first CoFeB layer, a second CoFeB layer over the interlayer, and a nickel iron (NiFe) layer over the second CoFeB layer.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A silicon-controlled rectifier includes a semiconductor body including a first main surface, an active device region, a first, a second, a third and a fourth surface contact area at the first main surface and arranged directly one after another along a first lateral direction, wherein the semiconductor body is electrically contacted at each of the first to fourth surface contact areas, and a first, a second, a third and a fourth SCR region, wherein the first and third SCR regions are of a first conductivity type and directly adjoin the first and third surface contact areas, respectively, and wherein the second and fourth SCR regions are of a second conductivity type and directly adjoin the second and fourth surface contact areas, respectively, wherein the first SCR region is electrically connected to the fourth SCR region, and the second SCR region is electrically connected to the third SCR region.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H01L 29/74 - Dispositifs du type thyristor, p.ex. avec un fonctionnement par régénération à quatre zones
9.
SEMICONDUCTOR DEVICE WITH GATE STRUCTURE AND CURRENT SPREAD REGION
According to some embodiments, a method for manufacturing a semiconductor device is provided. One or more first implantation processes are performed to form an implanted region, of a first conductivity type, in a semiconductor body. A trench is formed in the semiconductor body. After forming the trench, a second implantation process is performed to form a current spread region, of a second conductivity type, in the semiconductor body. The second implantation process includes implanting first dopants, through a top surface of the semiconductor body, to form a first portion of the current spread region, and implanting second dopants, through a bottom of the trench, to form a second portion of the current spread region. A gate structure is formed in the trench. A vertical position of the first portion of the current spread region matches a vertical position of the gate structure. The second portion of the current spread region underlies the gate structure.
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
H01L 29/10 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode ne transportant pas le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
An antenna structure for a contactless wearable structure having a plurality of antenna tracks on the substrate, the opposite ends of which are connectable to form an antenna when the substrate is bent, a plurality of capacitor elements on the substrate that are couplable to the antenna for adjusting the resonance frequency of the antenna, and at least one predefined separation region, by means of which it is possible to adjust which of the plurality of capacitor elements are electrically conductively connectable to the antenna when the substrate is bent, in order to form at least one capacitor with a predetermined total capacitance that is electrically conductively coupled to the antenna.
A touch sensor includes a touch structure; a signal generator configured to generate an excitation signal; a transmitter configured to receive the excitation signal and transmit an ultrasonic transmit wave towards the touch structure based on the excitation signal; a receiver configured to receive an ultrasonic reflected wave produced by a reflection of the ultrasonic transmit wave at the touch structure, wherein the transmitter and the receiver are coupled by a capacitive path, the receiver is configured to be influenced by the excitation signal whereby the excitation signal induces a capacitive cross-talk on the capacitive path, and the receiver is configured to generate a measurement signal representative of the capacitive cross-talk; and a measurement circuit coupled to the receiver and configured to perform a comparison of the measurement signal with a threshold to determine whether a no-touch event or a touch event has occurred at the touch interface.
G06F 3/043 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction utilisant la propagation d'ondes acoustiques
G06F 3/041 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction
G06F 3/044 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction par des moyens capacitifs
12.
MOLDED PACKAGE HAVING AN ELECTRICALLY CONDUCTIVE CLIP WITH A CONVEX CURVED SURFACE ATTACHED TO A SEMICONDUCTOR DIE
A molded package includes: a semiconductor die; a substrate attached to a bottom side of the semiconductor die; an electrically conductive clip attached to a top side of the semiconductor die; and a mold compound encapsulating the semiconductor die. A top side of the electrically conductive clip faces away from the semiconductor die and has an exposed flat surface that overlays the semiconductor die and is not covered by the mold compound. A bottom side of the electrically conductive clip faces the semiconductor die and has a convex curved surface that is attached to the top side of the semiconductor die. Along a vertical cross-section of the electrically conductive clip from the exposed flat surface to the convex curved surface, the electrically conductive clip has a plano-convex shape delimited by the exposed flat surface and the convex curved surface. A method of producing the molded package is also described.
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
13.
CHIP PACKAGE, CHIP SYSTEM, METHOD OF FORMING A CHIP PACKAGE, AND METHOD OF FORMING A CHIP SYSTEM
A chip package is provided. The chip package includes a first chip, a second chip, an electrically conductive structure to which the first chip and the second chip are mounted, at least one contact terminal for electrically contacting the first chip and/or the second chip, and encapsulation material at least partially encapsulating the first chip, the second chip, and the electrically conductive structure. The encapsulation material forms a chip package body from which the at least one contact terminal protrudes. At least a portion of the electrically conductive structure forms a portion of an outer surface of the chip package body.
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
14.
SENSOR DEVICES HAVING AN ACOUSTIC COUPLING MEDIUM, AND ASSOCIATED MANUFACTURING METHODS
A sensor device contains at least one sensor chip having at least one MEMS structure arranged at a main surface of the at least one sensor chip, wherein the at least one sensor chip is configured to transmit ultrasonic signals and/or to receive ultrasonic signals. The sensor device further contains an acoustic coupling medium arranged selectively on the at least one MEMS structure, wherein the acoustic coupling medium is configured to decouple an ultrasonic signal to be emitted from the at least one MEMS structure and/or to inject a received ultrasonic signal into the at least one MEMS structure. The acoustic coupling medium only partially covers the main surface of the at least one sensor chip.
G06F 3/043 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction utilisant la propagation d'ondes acoustiques
B06B 1/02 - Procédés ou appareils pour produire des vibrations mécaniques de fréquence infrasonore, sonore ou ultrasonore utilisant l'énergie électrique
15.
System and Method for Fast Mode Change of a Digital Microphone Using Digital Cross-Talk Compensation
A circuit includes a cross-talk compensation component including a power profile reconstruction component for reconstructing the power profile of a digital microphone coupled to a microelectromechanical (MEMS) device, wherein the power profile represents power consumption of the digital microphone over time between at least two operational modes of the digital microphone, and a reconstruction filter for modeling thermal and/or acoustic properties of the digital microphone; and a subtractor having a first input for receiving a signal from the digital microphone, a second input coupled to the cross-talk compensation component, and an output for providing a digital output signal.
B81B 7/02 - Systèmes à microstructure comportant des dispositifs électriques ou optiques distincts dont la fonction a une importance particulière, p.ex. systèmes micro-électromécaniques (SMEM, MEMS)
H04R 3/06 - Circuits pour transducteurs pour corriger la fréquence de réponse des transducteurs électrostatiques
The described techniques address issues associated with hybrid current or magnetic field sensors used to detect both low- and high-frequency magnetic field components. The hybrid sensor implements a DC component rejection path in the high-frequency magnetic field component path. Both digital and analog implementations are provided, each functioning to generate a DC component cancellation signal to at least partially cancel a DC component of a current signal generated via the high-frequency magnetic field component path. The hybrid sensor provides a high-bandwidth, high-accuracy, and low DC offset hybrid current solution that also eliminates the need for DC decoupling capacitors in the high-frequency path. A modification is also described for implementing a Sigma-Delta (ΣΔ) quantization noise reduction path to reduce the quantization noise and to improve accuracy.
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H03M 3/00 - Conversion de valeurs analogiques en, ou à partir d'une modulation différentielle
17.
TEST ARRANGEMENT AND METHOD FOR TESTING AN INTEGRATED CIRCUIT
A test arrangement for testing an integrated circuit is described wherein the test arrangement comprises a test pattern generator configured to generate a sequence of test patterns, a memory storing an indication for each of a plurality of groups of one or more of the test patterns, whether to use the group of test patterns for testing an integrated circuit and a controller configured to, for each of the test patterns, control the test pattern generator to feed the test pattern to the integrated circuit if the test pattern belongs to a group that should be used for testing the integrated circuit and to skip the test pattern in the testing of the integrated circuit if the test pattern belongs to a group that should not be used for testing the integrated circuit.
A semiconductor device includes a semiconductor body having an upper surface, a group of first upper-level metal fingers and second upper-level metal fingers that are arranged alternatingly with one another, wherein each of the first upper-level metal fingers is electrically connected to the semiconductor body by the first lower-level conductive fingers, wherein each of the second upper-level metal fingers is electrically connected to the semiconductor body by the second lower-level conductive fingers, wherein the group of first lower-level conductive fingers and second lower-level conductive fingers defines a connection area over the upper surface, and wherein in the connection area the first upper-level metal fingers are at least partially non-overlapping with the second upper-level metal fingers.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H01L 23/528 - Configuration de la structure d'interconnexion
19.
PIEZORESISTIVE TRANSISTOR DEVICE AND POWER ELECTRONIC MODULE INCLUDING A PIEZORESISTIVE TRANSISTOR DEVICE
A piezoresistive transistor device includes a first transistor cell having a first piezoelectric material body and a first piezoresistive material body arranged in a stacked configuration. A first electrical resistance of the first piezoresistive material body is dependent upon a voltage applied across the first piezoelectric material body by way of a pressure applied by the first piezoelectric material body to the first piezoresistive material body. A second transistor cell includes a second piezoelectric material body and a second piezoresistive material body arranged in a stacked configuration. A second electrical resistance of the second piezoresistive material body is dependent upon a voltage applied across the second piezoelectric material body by way of a pressure applied by the second piezoelectric material body to the second piezoresistive material body. An internal electrical interconnect is configured to electrically connect the first electrical resistance and the second electrical resistance in series or in parallel.
A method of monitoring a thermal impedance of at least a portion of a thermal path between a semiconductor device having at least two output terminals and a heat sink s provided. The method includes causing power dissipation in the semiconductor device by reloading parasitic capacitances of the semiconductor device such that the at least two output terminals are at the same voltage level, measuring a first temperature in response to the power dissipation at a first end of the portion of the thermal path, measuring a second temperature in response to the power dissipation at a second end of the portion of the thermal path, and determining a measure of the thermal impedance based on the first temperature and the second temperature.
An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/482 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes formées de couches conductrices inséparables du corps semi-conducteur sur lequel elles ont été déposées
A method of driving a transistor between switching states includes controlling a transition of a gate voltage at a gate terminal of a transistor during each of a plurality of turn-off switching events to turn off the transistor, wherein the transistor is configured to be turned off according to a desaturation time during each of the plurality of turn-off switching events; measuring a transistor parameter indicative of a voltage slew rate of the transistor for a first turn-off switching event during which the transistor is transitioned from an on state to an off state; and regulating a duration of the desaturation time for a next turn-off switching event based on the measured transistor parameter.
H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
23.
Semiconductor Package and Passive Element with Interposer
A method includes providing an interposer that includes an electrically insulating substrate, upper contact pads disposed on an upper surface, and lower contact pads disposed on a lower surface, providing a semiconductor package that includes a semiconductor die embedded within a package body and a plurality of package terminals exposed from the package body, providing a first passive electrical element that comprises first and second terminals, forming a first electrical connection between the first terminal of the first passive electrical element and a first one of the lower contact pads via the interposer, forming a second electrical connection between the second terminal of the first passive electrical element and a first one of the package terminals, and forming a third electrical connection between a second one of the package terminals and a second one of the lower contact pads via the interposer.
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
24.
CHIP ASSEMBLY, METHOD FOR FORMING A CHIP ASSEMBLY, AND METHOD FOR USING A CHIP ARRANGEMENT
A chip arrangement including a chip module which includes a chip, a contact-based interface in accordance with ISO 7816 which is electrically conductively connected to the chip, and an antenna structure which is electrically conductively connected to the chip and provides a contactless interface, and a carrier which comprises a chip module receptacle and a booster antenna structure which, when the chip module is arranged in the chip module receptacle of the carrier, inductively couples to the antenna structure of the chip module, wherein the chip module is arranged releasably in the chip module receptacle.
G06K 19/077 - Supports d'enregistrement avec des marques conductrices, des circuits imprimés ou des éléments de circuit à semi-conducteurs, p.ex. cartes d'identité ou cartes de crédit avec des puces à circuit intégré - Détails de structure, p.ex. montage de circuits dans le support
H01L 23/498 - Connexions électriques sur des substrats isolants
25.
MULTI-BEAM LASER BEAM SCANNER IN A PICTURE GENERATION UNIT
A picture generation system includes a plurality of red-green-blue (RGB) light transmitters configured to synchronously generate respective pixel light beams and transmit the respective pixel light beams along respective transmission paths to be projected into a full field of view (FOV). The full FOV is divided into a plurality of FOV sections that are respectively paired with a different one of the plurality of RGB light transmitters such that each of the plurality of RGB light transmitters transmits light into a respective area defined by its respective FOV section. The picture generation system further includes a scanning system arranged on each of the respective transmission paths of the plurality of RGB light transmitter. The scanning system includes a scanning structure that enables the scanning system to simultaneously steer the respective pixel light beams into the plurality of FOV sections.
G02B 26/12 - Systèmes de balayage utilisant des miroirs à facettes multiples
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
H04B 10/50 - Systèmes de transmission utilisant des ondes électromagnétiques autres que les ondes hertziennes, p.ex. les infrarouges, la lumière visible ou ultraviolette, ou utilisant des radiations corpusculaires, p.ex. les communications quantiques Émetteurs
26.
Real-Time Chirp Signal Frequency Linearity Measurement
A frequency linearity measurement circuit configured to measure a frequency linearity of a frequency signal includes: a first measurement circuit configured to generate a first estimate of an integer number of clock cycles of the frequency signal within a respective gate signal period of a gate signal; a second measurement circuit comprising a time-to-digital converter (TDC) configured to generate a second estimate of a fractional number of clock cycle of the frequency signal within the respective gate signal period; a reference measurement circuit configured to generate a third estimate of an expected number of clock cycles within the respective gate signal period; and a closed-loop frequency tracking circuit configured to track a frequency error between an expected frequency and a measured frequency, where the expected frequency and the measured frequency are determined based on the third estimate and on a sum of the first estimate and the second estimate, respectively.
G01S 7/35 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe - Détails de systèmes non impulsionnels
27.
Real-Time Chirp Signal Frequency Linearity Measurement
A frequency linearity measurement circuit configured to measure a frequency linearity of a frequency signal includes: a first measurement circuit having a counter, where the counter is controlled by a gate signal having a gate signal period, where the first measurement circuit is configured to generate a first estimate of an integer number of clock cycles of the frequency signal within a respective gate signal period of the gate signal; a second measurement circuit having a time-to-digital converter (TDC), where the TDC is controlled by the gate signal, and is configured to generate a second estimate of a fractional number of clock cycle of the frequency signal within the respective gate signal period of the gate signal; and a reference measurement circuit configured to generate a third estimate of an expected number of clock cycles within the respective gate signal period of the gate signal.
H03L 7/099 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
G01S 13/34 - Systèmes pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées utilisant la transmission d'ondes continues modulées en fréquence, tout en faisant un hétérodynage du signal reçu, ou d’un signal dérivé, avec un signal généré localement, associé au signal transmis simultanément
H03L 7/091 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence y compris le filtrage ou l'amplification de son signal de sortie le détecteur de phase ou de fréquence utilisant un dispositif d'échantillonnage
28.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
A semiconductor device includes a transistor including transistor cells. Each transistor cells has a gate electrode arranged in gate trenches formed in a first portion of a silicon carbide substrate and extending in a first horizontal direction, a source region, a channel region, and a current-spreading region. The source region, channel region, and at least part of the current-spreading region are arranged in ridges patterned by the gate trenches. The transistor cells further include a body contact portion of the second conductivity type arranged in a second portion of the silicon carbide substrate and electrically connected to the channel region. The transistor cells further include a shielding region of the second conductivity type. A first portion of the shielding region is arranged below the gate trenches, respectively, and a second portion of the shielding region is arranged adjacent to a sidewall of the gate trenches, respectively.
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
29.
RE-CONFIGURABLE SENSOR DEVICE AND METHOD FOR RECONFIGURING A SENSOR DEVICE USING A PULSE MODULATED SIGNAL
Disclosed is a re-configurable sensor arrangement (100) including a sensor device (110) and a controller device (120), both being configured to communicate with each other, wherein the controller device (120) is configured to transmit a pulse modulated signal (130) to the sensor device (110) via a one-wire voltage interface (140), and wherein the sensor device (110) is configured to receive the pulse modulated signal (130) via the one-wire voltage interface (140) and to re-configure its internal configuration in response to the received pulse modulated signal (130).
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
30.
Power Semiconductor Module Comprising a First and a Second Compartment and Method for Fabricating the Same
A power semiconductor module includes a power semiconductor die arranged on a power substrate, a housing enclosing the power semiconductor die and the power substrate, wherein an interior volume formed by the housing is divided by interior walls into at least a first compartment and a second compartment, wherein the power semiconductor die is arranged within the first compartment, a first encapsulation material encapsulating the power semiconductor die and at least partially filling the first compartment, and a second encapsulation material different from the first encapsulation material, the second encapsulation material encapsulating the first encapsulation material and at least partially filling the second compartment, wherein the first encapsulation material is arranged within the first compartment but not within the second compartment.
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/053 - Conteneurs; Scellements caractérisés par la forme le conteneur étant une structure creuse ayant une base isolante qui sert de support pour le corps semi-conducteur
H01L 25/11 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
31.
ENCAPSULATED MEMS DEVICE AND METHOD FOR MANUFACTURING THE MEMS DEVICE
An encapsulated MEMS device and a method for manufacturing the MEMS device are provided. The method comprises providing a cavity structure having an inner volume comprising a plurality of MEMS elements, which are relatively displaceable with respect to each other, and having an opening structure to the inner volume, depositing a Self-Assembled Monolayer (SAM) through the opening structure onto exposed surfaces within the inner volume of the cavity structure, and closing the cavity structure by applying a layer structure on the opening structure for providing a hermetically closed cavity.
A magnetic sensor apparatus includes a magnetic field generating circuit which is configured to generate a magnetic field, a magnetic field sensor circuit which is configured to output a sensor signal in response to the magnetic field, which sensor signal has a signal amplitude dependent on a sensitivity of the magnetic field sensor circuit, an amplifier circuit which is configured to amplify the sensor signal and to output an amplified sensor signal with an amplified signal amplitude, and a control circuit which is configured to use a setting signal to set a supply signal of the magnetic field sensor circuit and/or a gain of the amplifier circuit such that the amplified signal amplitude corresponds to a target amplitude.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
33.
MOSFET-BASED RF SWITCH WITH IMPROVED ESD ROBUSTNESS
An RF switch device includes transistors coupled in series forming an RF conductive current path; a first resistive bias network forming a DC conductive bias path between gate nodes of the plurality of transistors; and a first ESD bias component coupled between the RF conductive current path and the first resistive bias network, wherein the first ESD bias component provides a DC conductive path between the RF conductive current path of the RF switch device and the first resistive bias network during an ESD event.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
H02H 9/04 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension
34.
FAST LISSAJOUS LOCK CONTROL AND SYNCHRONIZATION OF SCANNING AXES OF MICROELECTROMECHANICAL SYSTEM
A method of synchronizing a first oscillation about a first axis with a second oscillation about a second axis includes: generating a first position signal that indicates a position of the first oscillation about the first axis; generating a second position signal that indicates a position of the second oscillation about the first axis; determining a phase difference between the first and the second position signals; comparing the phase difference to a threshold value to generate a comparison result; generating a first reference signal having a first frequency and a second reference signal having a second frequency; synchronizing the first oscillation to the first frequency and synchronizing the second oscillation to the second frequency; monitoring the comparison result; and synchronously triggering a start of the first reference signal and the second reference signal responsive to the comparison result indicating that the phase difference is less than the threshold value.
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G01S 7/481 - Caractéristiques de structure, p.ex. agencements d'éléments optiques
H03L 7/099 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
A semiconductor device includes: a transistor formed in a first semiconductor layer stack; a diode formed in a second semiconductor layer stack, the diode including an anode metal layer; and a carrier. The transistor and the diode are mounted to the carrier. A terminal of the transistor is electrically connected to the carrier, and the anode metal layer is in direct contact with the carrier.
H01L 27/06 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
36.
DEVICE WITH ULTRASONIC TRANSDUCER AND METHOD FOR MANUFACTURING SAME
Device with ultrasonic transducer and method for manufacturing same. A device is provided, having an ultrasonic transducer, which includes a membrane and a cover element. A coupling medium entirely fills an interspace between the membrane and the cover element, and extends from the interspace into a reservoir space which communicates with the interspace.
B06B 1/02 - Procédés ou appareils pour produire des vibrations mécaniques de fréquence infrasonore, sonore ou ultrasonore utilisant l'énergie électrique
A current sensor includes a current rail and a magnetic field sensor. The magnetic field sensor is configured to measure a magnetic field induced by a current flowing through the current rail. A first insulation layer and a second insulation layer are arranged between the current rail and the magnetic field sensor. An interface between the first insulation layer and the second insulation layer is free of a contact with the current rail and/or is free of a contact with the magnetic field sensor. A portion of the current rail extends into the second insulation layer and the portion of the current rail is encapsulated by the second insulation layer.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A circuit is configured to generate a first switching signal and a second switching signal. During a first portion of a first switching period, both the first switching signal and the second switching signal indicate to turn-on and turn-off. During a second portion of the first switching period, the first switching signal indicates to turn-on and the second switching signal indicates to turn-off. In response to a determination that a measurement time threshold exceeds the first switching period, the circuit is configured to generate a first adapted switching signal that extends the turn-on portion by a time value in the first switching period and to generate a second adapted switching signal that extends the turn-on time by the time value in a second switching period. The circuit is further configured to control switching circuitry using the first adapted switching signal and the second adapted switching signal to operate a motor.
H02P 23/14 - Estimation ou adaptation des paramètres des moteurs, p.ex. constante de temps du rotor, flux, vitesse, courant ou tension
H02P 27/08 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs avec modulation de largeur d'impulsions
39.
Excess Loop Delay Compensation for a Delta-Sigma Modulator
In accordance with an embodiment, a delta-sigma modulator includes: an analog loop filter comprising an outer portion and an inner portion having an input coupled to the outer portion; a quantizer coupled to an output of the inner portion of the analog loop filter; an outer feedback path coupled between an output of the quantizer and an input to the outer portion of the analog loop filter; and a compensation filter coupled between an output of the quantizer and an input of the inner portion of the analog loop filter. The compensation filter has a transfer function configured to correct for an effect of excess loop delay (ELD) on the delta-sigma modulator.
A sensor system may include a magnet arranged such that a linear position of the magnet corresponds to a position of a trigger element on a substantially linear trajectory, and such that an angular position of the magnet corresponds to a selected position of a selection element, the selected position being one of a plurality of selected positions. The sensor system may include a magnetic sensor to determine the position of the trigger element based on a strength of a first magnetic field component and a strength of a second magnetic field component, and determine the selected position of the selection element based on a strength of a third magnetic field component and the strength of the second magnetic field component. The first magnetic field component, the second magnetic field component, and the third magnetic field component may be perpendicular to each other.
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
41.
BROADBAND HIGH POWER TRANSMIT/RECEIVE SWITCH SYSTEM
A switch system includes a first hybrid coupler having a first node coupled to a termination terminal, a second node coupled to an antenna terminal, a third node coupled to a quadrature terminal, and a fourth node coupled to an in-phase terminal; and a radio frequency (RF) switch having a first switch coupled between the quadrature terminal and ground, and a second switch coupled between the in-phase terminal and ground, wherein the termination terminal is configured for coupling to a load, wherein the load and the RF switch dissipate RF power due to a transmit mode insertion loss, and wherein a majority of the RF power is reflected into the load by the first hybrid coupler.
A transceiver hybrid includes a multi-layer laminated hybrid comprising a coupler, the coupler including a first metal layer in a first layer of the multi-layer laminated hybrid having a first end coupled to a termination terminal and a second end coupled to a quadrature terminal; and a second metal layer in a second layer of the multi-layer laminated hybrid having a first end coupled to an antenna terminal, and a second end coupled to an in-phase terminal, wherein a width of the first metal layer is greater than a width of the second metal layer, such that a registration error margin is formed between the first metal layer and the second metal layer.
H04B 1/58 - Dispositions hybrides, c. à d. dispositions pour la transition d’une transmission bilatérale sur une voie à une transmission unidirectionnelle sur chacune des deux voies ou vice versa
H04B 1/3888 - Dispositions pour le transport ou la protection d’émetteurs-récepteurs
43.
CHEMO-RESISTIVE GAS SENSING DEVICE COMPRISING A CATALYTIC GAS FILTER ARRANGEMENT
A sensor chip includes a substrate and one or more chemo-resistive gas sensing elements attached to the substrate. Each gas sensing element provides a signal depending on one or more gases to be sensed. A catalytic gas filter arrangement includes one or more filter sections, each filter section including a cavity covered with at least one membrane. The at least one membrane is supported by a support structure and includes gas permeable pores. A surface defining the pores includes a catalytic material for degrading one or more of the gases. The gas filter arrangement is arranged so at least one of the chemo-resistive gas sensing elements is exposed to a filtered mixture of the gases in the cavity of one of the filter sections. The filtered mixture of gases is obtained by filtering the ambient mixture of the one or more gases with the one of the filter sections.
G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
G01N 27/16 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant l'impédance en recherchant la résistance d'un corps chauffé électriquement dépendant de variations de température produite par l'oxydation par combustion ou catalyse d'un matériau de l'espace environnant à tester, p.ex. d'un gaz
44.
Apparatus, Electronic Device and Method for Target Motion Detection
An apparatus includes interface circuitry configured to receive data indicating a measurement signal of a radar sensor. The apparatus further includes processing circuitry configured to determine a rate at which the measurement signal crosses a predefined value based on the data and determine presence of at least one of an interference signal and a target motion in a field of view of the radar sensor based on the rate.
A sensor system may include a first magnet arranged such that a position of the first magnet corresponds to a position of a trigger element on a linear trajectory. The sensor system may include a second magnet arranged such that a position of the second magnet corresponds to a selected position of a selection element. The sensor system may include a magnetic sensor to detect a strength of a first magnetic field component, a strength of a second magnetic field component, and a strength of a third magnetic field component. The magnetic sensor may be further to determine the position of the trigger element based on the strength of the first magnetic field component and the strength of the second magnetic field component, and to determine the selected position of the selection element based on the strength of the third magnetic field component.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
46.
METHODS AND SYSTEMS FOR ACCELERATING PIXEL PROCESSING
An image processing system, includes an image sensor, a bus structure coupled to the image sensor, and a system memory coupled to the image sensor via the bus structure. A direct memory access (DMA) controller is coupled to the bus structure. The DMA controller includes in-line logic hardware configured to retrieve raw pixel data from the image sensor, and internally process the retrieved raw pixel data thereby providing processed pixel data.
G06F 13/28 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus d'entrée/sortie utilisant le transfert par rafale, p.ex. acces direct à la mémoire, vol de cycle
G06K 7/10 - Méthodes ou dispositions pour la lecture de supports d'enregistrement par radiation corpusculaire
47.
Digital coarse locking in digital phase-locked loops
A digital phase-locked loop (DPLL) circuit includes: a first time-to-digital converter (TDC) and a first digital loop filter (DLF) that are configured to be coupled between a reference clock source and a digitally controlled oscillator (DCO), where the first TDC is configured to, during an acquisition mode, generate a phase error by: receiving a reference clock signal from the reference clock source; receiving a clock signal that is based on an output of the DCO divided by a dividing factor, computing a phase error using the reference clock signal and the clock signal; detecting cycle slipping in the computed phase error; and in response to detecting the cycle slipping, modifying the computed phase error to reduce the impact of cycle slipping on the DPLL circuit; and a first frequency divider circuit configured to generate the clock signal by dividing the output of the DCO by the dividing factor.
H03L 7/093 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence y compris le filtrage ou l'amplification de son signal de sortie utilisant des caractéristiques de filtrage ou d'amplification particulières dans la boucle
H03L 7/18 - Synthèse de fréquence indirecte, c. à d. production d'une fréquence désirée parmi un certain nombre de fréquences prédéterminées en utilisant une boucle verrouillée en fréquence ou en phase en utilisant un diviseur de fréquence ou un compteur dans la boucle
H03L 7/099 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
48.
POWER CONVERTER CONTROL IN AN ISOLATED POWER DOMAIN
In accordance with an embodiment, an electronic control unit (ECU) includes: a high voltage domain and a low voltage domain galvanically isolated from each other; a bus interface circuit in the low voltage domain; a controller in the high voltage domain, the controller being configured to receive data from and transmit data to the bus interface circuit; a first isolation device that couples the controller and the bus interface circuit; a DC/DC converter in the high voltage domain configured to receive a first battery voltage and configured to generate an output voltage therefrom for supplying the controller; and a second isolation device configured to receive an enable signal from a first circuit node in the low voltage domain and to provide the enable signal to the DC/DC converter in the high voltage domain.
B60L 53/22 - PROPULSION DES VÉHICULES À TRACTION ÉLECTRIQUE; FOURNITURE DE L'ÉNERGIE ÉLECTRIQUE À L'ÉQUIPEMENT AUXILIAIRE DES VÉHICULES À TRACTION ÉLECTRIQUE; SYSTÈMES DE FREINS ÉLECTRODYNAMIQUES POUR VÉHICULES, EN GÉNÉRAL; SUSPENSION OU LÉVITATION MAGNÉTIQUES POUR VÉHICULES; CONTRÔLE DES PARAMÈTRES DE FONCTIONNEMENT DES VÉHICULES À TRACTION ÉLECTRIQUE; DISPOSITIFS ÉLECTRIQUES DE SÉCURITÉ POUR VÉHICULES À TRACTION ÉLECTRIQUE Échange d'éléments d’emmagasinage d'énergie dans les véhicules électriques caractérisés par des convertisseurs situés dans le véhicule - Détails de structure ou aménagements des convertisseurs de charge spécialement adaptés pour recharger des véhicules électriques
B60L 58/10 - Procédés ou agencements de circuits pour surveiller ou commander des batteries ou des piles à combustible, spécialement adaptés pour des véhicules électriques pour la surveillance et la commande des batteries
49.
METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE
The disclosure relates to a method for manufacturing a contact on a silicon carbide semiconductor substrate and to a silicon carbide semiconductor device comprising a crystalline silicon carbide semiconductor substrate and a contact layer directly in contact with the silicon carbide semiconductor substrate surface and having, at an interface to the semiconductor substrate, a contact phase portion comprising at least a metal, silicon, and carbon. The method comprises the acts of providing a crystalline silicon carbide semiconductor substrate, depositing a metallic contact material layer onto the crystalline silicon carbide semiconductor substrate, and irradiating at least a part of the silicon carbide semiconductor substrate and at least a part of the metallic contact material layer at their interface with at least one thermal annealing laser beam, thereby generating a contact phase portion at the interface, wherein the contact phase portion comprises at least a metal, silicon, and carbon.
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
The disclosure relates to a method for manufacturing a contact on a SiC substrate, wherein the method includes: providing a crystalline SiC substrate; modifying a crystal structure in a surface area of the SiC substrate such that a carbon-enriched SiC portion is generated in the surface area; forming a contact layer on the SiC substrate by depositing a metallic contact material onto the surface area that includes the carbon-enriched SiC portion; and thermal annealing of at least a part of the carbon-enriched SiC portion of the SiC substrate and at least a part of the contact layer, such that a ternary metallic phase portion including at least the metallic contact material, silicon, and carbon is generated. Furthermore, SiC semiconductor devices are described, which include a crystalline SiC substrate and a contact layer including a ternary metallic phase portion directly in contact with the SiC substrate surface.
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
51.
METHOD OF SOLDERING A SEMICONDUCTOR CHIP TO A CHIP CARRIER
A method of soldering a semiconductor chip to a chip carrier includes arranging a solder deposit including solder and solder flux between a contact portion of the carrier and a contact portion of a chip pad arranged at a surface of the semiconductor chip. Arranging a dielectric layer at the surface of the semiconductor chip. The dielectric layer includes an opening within which the contact portion of the chip pad is exposed. The dielectric layer further includes arranging a solder flux outgassing trench separate from the opening and intersecting with the solder deposit. The method further includes melting the solder deposit which causes liquid solder to be moved over the solder flux outgassing trench for extraction of flux gas.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
52.
Phase Change Switch Device Having a Set of Heaters Arranged to Heat a Phase Change Material and Method of Operating the Phase Change Switch Device
In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material, and a switch arrangement. The switch arrangement includes a plurality of switches, and is configured to selectively provide electrical power to the set of the heaters.
H03K 17/56 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs
53.
SEMICONDUCTOR PACKAGE HAVING A METAL CLIP AND RELATED METHODS OF MANUFACTURING
A semiconductor package includes: a semiconductor die attached to a lead frame and having a first bond pad at a side of the semiconductor die facing away from the lead frame; a metal clip having a first bonding region attached to the first bond pad by a solder joint, the metal clip providing an electrical pathway to the first bond pad; and an additional electrical pathway to the first bond pad. A first end of the additional electrical pathway is attached to the first bond pad. At one or more locations between the first end and a second end of the additional electrical pathway, the additional electrical pathway is attached to a surface of the first bonding region of the metal clip that faces away from the first bond pad. Methods of producing the semiconductor package are also described.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A current sensor system includes a magnetic field sensor including a chip plane, a first set of sensor elements sensitive to a first magnetic field component that is aligned in a first direction that is parallel to the chip plane, and a second set of sensor elements sensitive to a second magnetic field component that is aligned in a second direction that is perpendicular to the chip plane; and three conductor structures arranged in parallel to each other and configured to carry a current parallel or antiparallel to a third direction that is perpendicular to the first direction and to the second direction. The three conductor structures generate three magnetic fields based on the current flowing therethrough, where the three magnetic fields produce a first magnetic field distribution of the first magnetic field component and a second magnetic field distribution of the second magnetic field component.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p.ex. des dispositifs à effet Hall
G01R 19/10 - Mesure d'une somme, d'une différence, ou d'un rapport
55.
ERROR PROCESSING AND CORRECTION OF ADJACENT 2-BIT ERRORS
What is proposed is a solution for processing errors in a sequence of bits, wherein the sequence of bits, in the error-free case, forms a codeword of an error code, wherein the error code is based on an H-matrix or is able to be determined thereby, wherein an error syndrome is determined for the sequence of bits, wherein a link is determined between components of the error syndrome and parts of the H-matrix, and wherein two adjacent bits in the sequence of bits are corrected if the link adopts a predefined value.
H03M 13/11 - Détection d'erreurs ou correction d'erreurs transmises par redondance dans la représentation des données, c.à d. mots de code contenant plus de chiffres que les mots source utilisant un codage par blocs, c.à d. un nombre prédéterminé de bits de contrôle ajouté à un nombre prédéterminé de bits d'information utilisant plusieurs bits de parité
H03M 13/00 - Codage, décodage ou conversion de code pour détecter ou corriger des erreurs; Hypothèses de base sur la théorie du codage; Limites de codage; Méthodes d'évaluation de la probabilité d'erreur; Modèles de canaux; Simulation ou test des codes
56.
Antenna Package with Via Structure and Method of Formation Thereof
A semiconductor device comprises a semiconductor chip comprising a radio frequency (RF) circuit, a feedline structure coupled to the RF circuit, and an antenna structure comprising a main body stretching along a direction orthogonal to at least one side of a front side and a backside of the semiconductor device, wherein the antenna structure is coupled to the RF circuit through the feedline structure.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
57.
SYSTEMS, DEVICES AND METHODS FOR POWER MANAGEMENT AND POWER ESTIMATION
A microcontroller includes a plurality of (Intellectual Property) IP blocks each configured to perform one or more functions; a hardware power estimator circuit for estimating power of the microcontroller, the hardware power estimator including a hardware artificial neural network inlcuding a plurality of interconnected nodes arranged in one or more stages, wherein each individual stage comprises: a first input layer including values indicating activities of the microcontroller and/or indicating active cells of the microcontroller; a second input layer including a weighted set of values; an output layer including values calculated for the individual node stage; and at least one intermediate layer situated between the input layer and the output layer, wherein each node of the at least one intermediate layer comprises a multiply and adder (MADD) circuit that is configured to calculate a value for the respective node using values received from the first and second input layers.
In accordance with an embodiment, a method for digital-to-analog conversion includes: mapping a uniformly distributed input code to a non-uniformly distributed input code of a switched capacitor digital-to-analog converter (DAC), the non-uniformly distributed input code including a most significant code (MSC) and a least significant code (LSC); transferring a first charge from a set of DAC capacitors to a charge accumulator based on the MSC; forming a second charge based on the LSC; and transferring the second charge from the set of DAC capacitors to the charge accumulator, where each capacitor of the set of DAC capacitors is used for each value of the non-uniformly distributed input code, each capacitor of the set of DAC capacitors provides a same corresponding nominal charge within each value of the non-uniformly distributed input code, and where the same nominal charge is proportional to a value of the non-uniformly distributed input code.
A power module includes: a first substrate having a patterned first metallization; a second substrate vertically aligned with the first substrate and having a patterned second metallization that faces the patterned first metallization; first vertical power transistor dies having a drain pad attached to a first island of the patterned first metallization and a source pad electrically connected to a first island of the patterned second metallization via first spacers; and second vertical power transistor dies having a source pad electrically connected to the first island of the patterned first metallization via second spacers. A first subset of the second vertical power transistor dies has a drain pad attached to a second island of the patterned second metallization. A second subset of the second vertical power transistor dies has a drain pad attached to a third island of the patterned second metallization. A method of producing the module is described.
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/373 - Refroidissement facilité par l'emploi de matériaux particuliers pour le dispositif
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
60.
MOLDED POWER SEMICONDUCTOR MODULE AND METHOD FOR FABRICATING THE SAME
A molded power semiconductor module includes: one or more power semiconductor dies; a molded body at least partially encapsulating each power semiconductor die and having opposing first and second sides, and lateral sides connecting the first and second sides; and first and second power contacts arranged laterally next to each other at a first one of the lateral sides of the molded body and electrically coupled to the power semiconductor die(s). The power contacts each have opposing first and second sides, each first side having an exposed part exposed from the molded body, each second side having a part that is arranged in a vertical direction below an outline of the respective exposed part of the first side and that is at least partially covered by a protrusion part of the molded body. The vertical direction is perpendicular to the first and second sides of the power contacts.
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
A power semiconductor device includes at a first side and electrically isolated from first and second load terminals, first control electrodes for controlling a load current in first semiconductor channel structures formed in an active region at the first side, and at a second side and electrically isolated from the first and second load terminals, second control electrodes for controlling the load current in second semiconductor channel structures formed in the active region at the second side. At the second side and in a contiguous area of modified control (AMC) belonging to the active region and having a lateral extension of at least 30% of a thickness of a semiconductor body of the device, either no second control electrodes are provided or the second control electrodes are less effective in removing free charge carriers out of the power semiconductor device than the second control electrodes outside the AMC.
H01L 27/088 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type comprenant uniquement des composants à effet de champ les composants étant des transistors à effet de champ à porte isolée
H01L 21/822 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant un semi-conducteur, en utilisant une technologie au silicium
62.
Batch Soldering of Different Elements in Power Module
An electronic device includes a substrate including first and second metal regions, a first passive device that includes a metal joining surface and is arranged on the substrate with the metal joining surface of the first passive device facing first metal region, a semiconductor die that includes a metal joining surface and is arranged on the substrate with the metal joining surface of the semiconductor die facing the second metal region, a first soldered joint between the metal joining surface of the first passive device and the first metal region; and a second soldered joint between the metal joining surface of the semiconductor die and the second metal region, wherein a minimum thickness of the first soldered joint is greater than a maximum thickness of the second soldered joint.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
63.
Technique for Forming Cubic Silicon Carbide and Heterojunction Silicon Carbide Device
A method of forming a semiconductor device includes providing a base substrate comprising SiC and a growth surface extending along a plane that is angled relative to a first crystallographic plane of the SiC from the base substrate, forming first and second trenches in the base substrate that extend from the growth surface into the base substrate, epitaxially forming a first SiC layer on the growth surface of the base substrate by a step-controlled epitaxy technique, and epitaxially forming a second SiC layer on the first SiC layer, wherein the first SiC layer is a layer of α-SiC, and wherein the second SiC layer is a layer of β-SiC.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
C30B 25/20 - Croissance d'une couche épitaxiale caractérisée par le substrat le substrat étant dans le même matériau que la couche épitaxiale
An integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch, wherein at least a part of the phase change switch is provided below the first metallization layer, wherein the first metallization layer is provided laterally adjacent to the phase change switch, wherein the phase change switch comprises a heater, and wherein the heater and a part of the transistor are each provided in a lower-level interconnect layer of the integrated circuit.
H10B 63/00 - Dispositifs de mémoire par changement de résistance, p.ex. dispositifs RAM résistifs [ReRAM]
H10N 70/00 - Dispositifs à l’état solide sans barrière de potentiel ni de surface, spécialement adaptés au redressement, à l'amplification, à la production d'oscillations ou à la commutation
H10N 70/20 - Dispositifs de commutation multistables, p.ex. memristors
65.
PACKAGE WITH ELECTRICALLY INSULATED CARRIER AND AT LEAST ONE STEP ON ENCAPSULANT
A package is disclosed. In one example, the package includes a first main face for mounting a heat sink and an opposing second main face for being mounted on a mounting base. The package comprises a carrier, an electronic component mounted at the carrier, and an encapsulant encapsulating at least part of the electronic component and at least part of the carrier. Electrically insulating material covers electrically conductive material of the carrier at said first main face. The encapsulant comprises at least one step at the first main face.
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/498 - Connexions électriques sur des substrats isolants
A method of fabricating a semiconductor device includes: epitaxially growing a multilayer Group-III nitride structure on a first surface of a substrate; removing portions of the multilayer structure to form a mesa arranged on the first surface; applying insulating material to the first surface of the substrate so that side faces of the mesa are embedded in the insulating material; forming an electrode on a top surface of the mesa; forming a via in the insulating material that extends from the top surface of the insulating material to the first surface of the substrate; inserting conductive material into the via to form a conductive via; applying an electrically conductive redistribution structure to the upper surface and electrically connecting the conductive via to the electrode; and successively removing portions of a second surface of the substrate, to expose the insulating material and form a worked second surface including the insulating material.
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
67.
SECURE COMMUNICATION ACCELERATION USING A FRAME CLASSIFIER
In some implementations, a device may identify a set of characteristics of a frame. The device may compute a first key index associated with the frame based on the set of characteristics and using a first key index function. The device may determine whether the first key index is associated with any collision entries from a set of collision entries. The device may determine a set of security parameters associated with the frame using a particular key index. The particular key index is either the first key index when the first key index is not associated with any collision entries from the set of collision entries, or is a second key index when the first key index is associated with a collision entry from the set of collision entries.
A semiconductor device includes an electronics carrier, an electrically conductive receptacle attached to a first pad of the electronics carrier, and an electrically conductive press-fit connector including a flange and a base portion extending from the flange to a first end of the press-fit connector, wherein the press-fit connector is in a secured position whereby the base portion is disposed within and securely retained by the receptacle, and wherein the base portion of the press-fit connector is configured to maintain vertical separation between the flange and an upper end of the receptacle in the secured position.
H01R 12/58 - Connexions fixes pour circuits imprimés rigides ou structures similaires caractérisées par les bornes bornes pour insertion dans des trous
A semiconductor module includes: a printed circuit board having a first side and an opposite second side; a plurality of power semiconductor packages arranged over and electrically coupled to the first side of the printed circuit board, a first side of the power semiconductor packages facing the first side of the printed circuit board and an opposite second side being configured to be coupled to a heatsink; and at least one bus bar arranged over and electrically coupled to the first side of the printed circuit board. The bus bar is configured to carry a supply current and/or a ground current of at least some of the power semiconductor packages.
An apparatus is provided that includes a substrate. In addition, the apparatus includes a first electrically conductive path arranged in a second layer above the substrate and forming a first connection of the apparatus, and a second electrically conductive pad arranged in the second layer and forming a second connection of the apparatus. An electrically conductive element is arranged in a first layer spaced apart from the second layer. The electrically conductive element forms a first capacitor with either the first pad or the second pad. In addition, a first coil is arranged in the first layer, the second layer, or in both layers. A first end of the first coil is connected to the second pad.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01F 27/32 - Isolation des bobines, des enroulements, ou de leurs éléments
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
Disclosed are a method and apparatus for estimating a rotor position angle of an electric machine, an electric machine control system comprising the apparatus, and a computer-readable storage medium. The method comprises obtaining a back emf of a stator of the electric machine; performing a second-order generalized integrator operation on the back emf, to obtain a signal with a phase lag of 90 degrees with respect to the back emf; dividing the phase-lagging signal by a resonant frequency of the back emf to obtain a stator flux linkage of the stator, then subtracting an inductive magnetic flux of the stator from the stator flux linkage to obtain a rotor flux linkage; and computing a rotor position angle based on the rotor flux linkage.
H02P 21/18 - Estimation de la position ou de la vitesse
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p.ex. une armature mobile
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
A light control module (LCM) in accordance with one embodiment, includes terminals configured to receive a supply voltage, and a switching converter configured to receive the supply voltage and to provide an output voltage at an output node, wherein the output voltage and the supply voltage have different polarities. Further, the LCM includes an output terminal coupled to the output node of the switching converter and configured to sink a load current from a LED module.
H05B 45/54 - Circuits pour faire fonctionner des diodes électroluminescentes [LED] sensibles à la vie des LED; Circuits de protection dans un ensemble sériel de LED
H05B 45/3725 - Alimentation du circuit à découpage [SMPS]
In an embodiment, a method includes: receiving a global trigger with a first millimeter-wave radar; receiving the global trigger with a second millimeter-wave radar; generating a first internal trigger of the first millimeter-wave radar after a first offset duration from the global trigger; generating a second internal trigger of the second millimeter-wave radar after a second offset duration from the global trigger; start transmitting first millimeter-wave radar signals with the first millimeter-wave radar based on the first internal trigger; and start transmitting second millimeter-wave radar signals with the second millimeter-wave radar based on the second internal trigger, where the second offset duration is different from the first offset duration, and where the first and second millimeter-wave radar signals are transmitted sequentially so as to exhibit no temporal overlap.
G01S 7/00 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , ,
G01S 13/87 - Combinaisons de plusieurs systèmes radar, p.ex. d'un radar primaire et d'un radar secondaire
In an embodiment, a method includes: receiving raw data from a millimeter-wave radar sensor; generating a first radar-Doppler image based on the raw data; generating a first radar point cloud based on the first radar-Doppler image; using a graph encoder to generate a first graph representation vector indicative of one or more relationships between two or more parts of the target based on the first radar point cloud; generating a first cadence velocity diagram indicative of a periodicity of movement of one or more parts of the target based on the first radar-Doppler image; and classifying an activity of a target based on the first graph representation vector and the first cadence velocity diagram.
G06V 10/764 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant la classification, p.ex. des objets vidéo
G06V 10/82 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant les réseaux neuronaux
G06V 10/84 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant les modèles graphiques de probabilités à partir de caractéristiques d’images ou de vidéos, p.ex. les modèles de Markov ou les réseaux bayésiens
G06V 40/20 - Mouvements ou comportement, p.ex. reconnaissance des gestes
G01S 13/89 - Radar ou systèmes analogues, spécialement adaptés pour des applications spécifiques pour la cartographie ou la représentation
A touch sensor includes: a transmitter configured to transmit an ultrasonic transmit wave towards a touch structure; a receiver configured to receive an ultrasonic reflected wave produced from the ultrasonic transmit signal being at least partially reflecting by the touch structure; a receiver circuit configured to convert the ultrasonic reflected wave into a measurement signal; the receiver circuit configured to generate an error value representative of a difference between a measured value of the measurement signal and a reference value; a programmable voltage source configured to provide a bias voltage to the transmitter or to the receiver; a controller configured to adjust the bias voltage based on the error value; a measurement circuit configured to measure the DC bias voltage and determine whether a no-touch event or a touch event has occurred at the touch structure based on at least one measurement of the bias voltage.
G06F 3/043 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction utilisant la propagation d'ondes acoustiques
G06F 3/041 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction
76.
METHOD FOR MANUFACTURING A CONTACT ON A SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE
The present disclosure generally relates to a method of manufacturing a contact on a silicon carbide semiconductor substrate wherein the method comprises providing a 4H—SiC semiconductor substrate, irradiating a surface area of the 4H—SiC semiconductor substrate with a first thermal annealing laser beam, thereby generating a phase separation of the surface area comprising at least a 3C—SiC layer, and depositing a contact material onto the 3C—SiC layer to form a contact layer on the semiconductor substrate. The disclosure further relates to a silicon carbide semiconductor device with an Ohmic contact comprising a 4H—SiC semiconductor substrate, a 3C—SiC layer, and a contact layer directly in contact with the 3C—SiC layer at the semiconductor surface.
H01L 21/04 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs présentant au moins une barrière de potentiel ou une barrière de surface, p.ex. une jonction PN, une région d'appauvrissement, ou une région de concentration de porteurs de charges
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p.ex. des rayons laser
77.
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THEREOF
A semiconductor device and method is disclosed. In one example, the semiconductor device includes a single first row of leads and a first chip carrier comprising a first electrically insulating layer arranged on the single first row of leads. At least one first semiconductor chip is mounted on the first electrically insulating layer, wherein the at least one first semiconductor chip is arranged over only the single first row of leads.
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
78.
TRAINING OF MACHINE-LEARNING ALGORITHM USING EXPLAINABLE ARTIFICIAL INTELLIGENCE
In accordance with an embodiment, a method of training of a machine-learning algorithm includes: obtaining a training dataset comprising multiple training feature vectors and associated ground-truth labels, the multiple training feature vectors representing respective radar measurement datasets; determining, for each one of the multiple training feature vectors, a respective weighting factor by employing an explainable artificial-intelligence analysis of the machine-learning algorithm in a current training state; and training the machine-learning algorithm based on loss values that are determined based on a difference between respective classification predictions made by the machine-learning algorithm in the current training state for each one of the multiple training feature vectors and the ground-truth labels, wherein the loss values are weighted using the respective weighting factors associated with each training feature vector.
What is disclosed is a hydrogen sensor (100) having a housing (101) that includes a cavity (102) and has a passage opening (103) from the cavity (102) to a gas connection of the hydrogen sensor (100) or an environment, having a first hydrogen sensor element (104), disposed in the cavity (102), for measurement of a hydrogen content in the cavity (102), having a first sorption element (105) for sorption of water and/or water vapor, especially an adsorption element (105) for adsorption of water and/or water vapor, and having a first heater (106) for bakeout of the first sorption element (105), wherein the first sorption element (105) has open pores and is disposed in the passage opening (103).
A phase change material switch device is provided. In one implementation, the phase change material switch device includes a phase change material and a heater device thermally coupled to the phase change material. During heating phases, a coupling device provides a first electrical impedance between a power source and the heater device. Outside the heating phases, the coupling device provides a second, higher, impedance.
H10N 70/20 - Dispositifs de commutation multistables, p.ex. memristors
H10N 70/00 - Dispositifs à l’état solide sans barrière de potentiel ni de surface, spécialement adaptés au redressement, à l'amplification, à la production d'oscillations ou à la commutation
In an embodiment, a method includes: receiving a range-Doppler image (RDI) based on raw data from a radar sensor; performing moving target indication (MTI) filtering on the RDI to generate a first filtered radar image; performing constant false alarm rate (CFAR) detection on the first filtered radar image to generate a second filtered radar image; performing minimum variance distortionless response (MVDR) beamforming on the second filtered radar image to generate a range-angle image (RAI); performing CFAR detection on the RAI to generate a third filtered radar image; generating a point set based on the third filtered radar image; clustering targets of the point set; and tracking at least one of the clustered targets using a Kalman filter.
G01S 13/90 - Radar ou systèmes analogues, spécialement adaptés pour des applications spécifiques pour la cartographie ou la représentation utilisant des techniques d'antenne synthétique
G01S 13/58 - Systèmes de détermination de la vitesse ou de la trajectoire; Systèmes de détermination du sens d'un mouvement
82.
RADIO FREQUENCY DEVICES INCLUDING RADIO FREQUENCY ABSORBENT FEATURES
A device includes a radio frequency chip and a heat sink arranged over the radio frequency chip. The device further includes a layer stack arranged between the radio frequency chip and the heat sink. The layer stack includes a first layer including a first material, a thermal interface material, and a metal layer arranged between the first material and the thermal interface material.
In an embodiment, a Group III nitride-based semiconductor device includes: a multilayer Group III nitride-based structure including a first major surface; and a source electrode, a gate electrode and a drain electrode arranged on the first major surface. The gate electrode is laterally arranged between the source electrode and the drain electrode and a metallization structure arranged on the first major surface. The metallization structure includes an electrically insulating layer arranged on the source electrode, the gate electrode and the drain electrode and a conductive redistribution structure electrically connected to the source electrode, the gate electrode and the drain electrode. One or more cavities are located in the electrically insulating layer of the metallization structure.
H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 29/417 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative transportant le courant à redresser, à amplifier ou à commuter
84.
Power Semiconductor Device and Method of Producing a Power Semiconductor Device
A power semiconductor device and a method of producing a power semiconductor device are presented. The power semiconductor device is, for example, embodied as an IGBT and includes a deep cross trench which extends below trenches that include, e.g., control and source trench electrodes.
H01L 29/739 - Dispositifs du type transistor, c.à d. susceptibles de répondre en continu aux signaux de commande appliqués commandés par effet de champ
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
85.
MODULAR POWER DEVICE PACKAGE EMBEDDED IN CIRCUIT CARRIER
A power semiconductor module arrangement includes a circuit carrier including an electrically insulating substrate and an upper metallization layer disposed on upper side of the electrically insulating substrate, and a plurality of power stage inlays that each include first and second transistor dies and a driver die configured to control switching of the first and second transistor dies. Each of the power stage inlays are modular units comprising terminals that are electrically connected to the first and second transistor dies and the driver die. Each of the power stage inlays is embedded within the electrically insulating substrate. The upper metallization layer comprises conductive connectors that extend over the power stage inlays and connect with the terminals of the terminals of each of the power stage inlays.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
H02M 3/157 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation avec commande numérique
H02M 3/335 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu avec transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrodes de commande pour produire le courant alternatif intermédiaire utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
86.
Core computing device for detecting error conditions in light emitting diode (LED) driver circuit
In some examples, this disclosure describes a light-emitting diode (LED) driver circuit comprising a set of LED drivers, wherein each LED driver of the set of LED drivers is configured to control one or more LEDs of a set of LEDs. Additionally, the LED driver circuit comprises a core computing device configured to receive LED control information, compare primary path LED driver control output data with secondary path LED driver control output data to detect whether one or more error conditions are present in the core computing device, receive channel status feedback information, compare the secondary path LED driver control output data with the channel status feedback information to detect whether one or more error conditions are present in the set of LED drivers or in the set of LEDs, and trigger, based on determining that one or more error conditions are present, one or more remedial actions.
A computer-implemented method of monitoring a process includes obtaining a sample data distribution. The sample data represents one or more parameters of a process. The sample data is collected by one or a plurality of sampling units. The method further includes calculating a control limit based on an evaluation of at least one difference of percentiles near an upper edge of the sample data distribution or a lower edge of the sample data distribution.
A current sensor is provided. The current sensor includes an electromagnetic coil configured to output a voltage induced by a current to be measured. The current sensor further includes a transistor coupled to the electromagnetic coil. The transistor is configured to control an output voltage of the transistor based on the voltage. The output voltage is indicative of the current to be measured.
G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p.ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p.ex. des transformateurs
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
89.
MULTI-FUNCTIONAL MAGNETIC TEST STRUCTURE FOR XMR SENSORS
A sensor die may include a set of sensing elements and a test structure associated with determining a magnetic sensitivity of the set of sensing elements. The test structure includes a first test sensing element sensitive in a direction in a plane defined by a surface of the sensor die, a second test sensing element sensitive in the direction in the plane defined by the surface of the sensor die, and a wire on chip (WoC) associated with applying a magnetic field to the first test sensing element and the second test sensing element. The first test sensing element, the second test sensing element, and the WoC may be arranged such that, when current flows through the WoC, the first test sensing element senses a component of the magnetic field in the direction, and the second test sensing element senses a component of the magnetic field in a perpendicular direction.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
90.
MEMS Device and Method for Manufacturing a MEMS Device
A MEMS device comprises a first membrane structure having a reinforcement region formed from one piece of the first membrane structure, wherein the reinforcement region has a larger layer thickness than an adjoining region of the first membrane structure. The MEMS device includes an electrode structure, wherein the electrode structure is vertically spaced apart from the first membrane structure.
A die package and method is disclosed. In one example, the die package includes a die having a first die contact on a first side and a second die contact on a second side opposite the first side, and insulating material laterally adjacent to the die. A metal structure substantially directly contacts the surface of the second die contact, wherein the metal structure is made of the same material as the second die contact. A first pad contact on the first side of the die electrically contacts the first die contact, and a second pad contact on the first side of the die electrically contacts the second die contact via the metal structure. The insulating material electrically insulates the metal structure from the first die contact.
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
92.
Voltage regulator and circuits with a voltage regulator
A circuit includes: a first load circuit and a second load circuit coupled in parallel between a first node and a reference voltage node, where the first load circuit and the second load circuit are configured to receive a first input signal and a second input signal, respectively; a first pass device and a first switch coupled in series between a voltage supply node and the first node; a second pass device and a second switch coupled in series between the voltage supply node and the first node; and an amplifier, where a first input terminal and a second input terminal of the amplifier are configured to be coupled to a reference input voltage and the first node, respectively, where an output terminal of the amplifier is coupled to a first control terminal of the first pass device and a second control terminal of the second pass device.
G05F 1/46 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu
G05F 3/24 - Régulation de la tension ou du courant là où la tension ou le courant sont continus utilisant des dispositifs non commandés à caractéristiques non linéaires consistant en des dispositifs à semi-conducteurs en utilisant des combinaisons diode-transistor dans lesquelles les transistors sont uniquement du type à effet de champ
G05F 1/575 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final caractérisé par le circuit de rétroaction
A method of driving a transistor between switching states includes controlling a transition of a gate voltage at a gate terminal of a transistor during each of a plurality of turn-off switching events to turn off the transistor, wherein the transistor is configured to be turned off according to a desaturation time during each of the plurality of turn-off switching events; measuring a transistor parameter indicative of a voltage slew rate of the transistor for a first turn-off switching event during which the transistor is transitioned from an on state to an off state; and regulating a duration of the desaturation time for a next turn-off switching event based on the measured transistor parameter.
H03K 17/00 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts
H03K 17/16 - Modifications pour éliminer les tensions ou courants parasites
H03K 17/687 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
A device is configured to receive, from a controller, an instruction requesting data for the device and determine a comparison result value based on a comparison of the data for the device and a reference value. The device is further configured to determine whether to respond to the instruction based on the comparison result value and, in response to a determination to respond to the instruction, output, to the controller, the comparison result value, wherein, to output the comparison result value, the device is configured to refrain from outputting the data for the device.
G06F 13/42 - Protocole de transfert pour bus, p.ex. liaison; Synchronisation
G01R 31/396 - Acquisition ou traitement de données pour le test ou la surveillance d’éléments particuliers ou de groupes particuliers d’éléments dans une batterie
B60L 58/00 - Procédés ou agencements de circuits pour surveiller ou commander des batteries ou des piles à combustible, spécialement adaptés pour des véhicules électriques
95.
Method for Executing a Program on a Data Processing Device
A method for executing a program on a data processing device, the method comprising storing multiple program instructions and data to be processed by a processor of the data processing device in one or more memories of the data processing device; receiving, from an external data processing device, a reference value for a check of the multiple program instructions; computing a check value from the multiple program instructions for the check by way of the data processing device when the program instructions are loaded from the one or more memories into an instruction buffer memory of the data processing device or by way of read access to the instruction buffer memory after the program instructions have been loaded into the instruction buffer memory from the one or more memories; and executing at least some of the program instructions if the check value matches the received reference value.
G06F 21/51 - Contrôle des usagers, programmes ou dispositifs de préservation de l’intégrité des plates-formes, p.ex. des processeurs, des micrologiciels ou des systèmes d’exploitation au stade du chargement de l’application, p.ex. en acceptant, en rejetant, en démarrant ou en inhibant un logiciel exécutable en fonction de l’intégrité ou de la fiabilité de la source
A regression suite apparatus for semiconductor IP having a plurality of functional blocks provides a knowledge graph defining, for each pair of first and second functional blocks, an indication of whether the second functional block depends on the first functional block; in case of a dependency, the knowledge graph comprises a weight representing a degree of dependency of the second functional block on the first functional block; an input for indicating functional blocks changed in an updated design; a selector arranged to select a subset of the tests by selecting numbers of tests of each of a plurality of different levels, wherein a first level selects tests corresponding to an input functional block and a second level selects tests corresponding to the input functional block in combination with second level blocks dependent on the input functional block; and apparatus for running the selected subset of tests on the updated design.
A battery cell circuit of a battery management system configured to receive, from a previous battery cell circuit of a plurality of battery cell circuits connected in a daisy chain configuration or ring configuration, an instruction requesting a value for the battery cell circuit and determine a comparison result value based on a comparison of the value for the battery cell circuit and a reference value. The battery cell circuit is further configured to output, to a controller, the comparison result value, wherein, to output the comparison result value, the battery cell circuit is configured to refrain from outputting the value for the battery cell circuit.
H01M 10/42 - Procédés ou dispositions pour assurer le fonctionnement ou l'entretien des éléments secondaires ou des demi-éléments secondaires
H01M 10/48 - Accumulateurs combinés à des dispositions pour mesurer, tester ou indiquer l'état des éléments, p.ex. le niveau ou la densité de l'électrolyte
G01R 31/396 - Acquisition ou traitement de données pour le test ou la surveillance d’éléments particuliers ou de groupes particuliers d’éléments dans une batterie
98.
Electronic device and electronic system that receives and processes telemetry information
An electronic device includes: an interface configured to receive telemetry information for one or more power semiconductor devices; and a data acquisition and processing unit. The data acquisition and processing unit may be configured to periodically update an estimate of a remaining lifetime of the one or more power semiconductor devices, based on the telemetry information collected during use of the one or more power semiconductor devices and received at the interface. The data acquisition and processing unit may be configured to adjust one or more operating parameters for each of the one or more power semiconductor devices that has reached a predetermined level of degradation as determined by the telemetry information. An electronic system that includes the electronic device is also described.
H04Q 9/00 - Dispositions dans les systèmes de commande à distance ou de télémétrie pour appeler sélectivement une sous-station à partir d'une station principale, sous-station dans laquelle un appareil recherché est choisi pour appliquer un signal de commande ou
99.
Techniques for measuring voltage over a power switch using zero current detection point
A method may comprise: controlling ON/OFF switching of a power switch via a driver circuit; receiving a first signal on a detection pin associated with the power switch, wherein the first signal corresponds to a first point in time when current is not passing through the power switch and wherein the first signal indicates a first voltage drop over one or more other circuit elements; receiving a second signal on the detection pin, wherein the second signal, wherein the second signal corresponds to a second point in time when current is passing through the power switch and wherein the second signal indicates a voltage drop over the power elements; and determining the voltage drop over the power switch based on a difference between the first signal and the second signal.
A method of manufacturing a semiconductor device in a semiconductor body is proposed. The method includes processing a semiconductor body at a first surface of the semiconductor body. The method further includes attaching the semiconductor body to a carrier via the first surface. The carrier includes an inner part and an outer part at least partly surrounding the inner part. The method further includes processing the semiconductor body at a second surface opposite to the first surface. The method further includes detaching the inner part of the carrier from the semiconductor body.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe