This optical cell for sedimentation analysis has a pair of opposing surfaces through which light is transmitted, and two polarizing plates, in which each of the two polarizing plates is disposed in a crossed Nicols state on each of the inner surfaces of the pair of opposing surfaces.
A method for forming a pattern of metal oxide capable of selectively etching an etching object containing metal oxide relative to a non-etching object and forming a pattern of the metal oxide along a pattern of the non-etching object serving as a template. Metal oxide containing oxide of at least one of tin and indium is etched using an etching gas to form the pattern of the metal oxide. An etching gas containing halon is brought into contact with a member to be etched in the presence of plasma, and etching is performed while a bias power is applied to a lower electrode (2) supporting the member to be etched to selectively etch a metal oxide layer (22) relative to a silicon substrate (24), a template layer (21), and an underlying layer (23), and the predetermined pattern of the template layer (21) is transferred to the metal oxide layer (22).
H01L 21/3213 - Gravure physique ou chimique des couches, p.ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
This laminate comprises, in the following order, a first resin layer, a first conductive layer, an insulating layer, a second conductive layer, and a second resin layer, wherein the first resin layer has an accommodation section, and the first conductive layer is disposed inside the accommodation section of the first resin layer. This conductive laminate comprises, in the following order, a first conductive layer, an insulating layer, and a second conductive layer, and comprises adhesion layers respectively between the first conductive layer and the insulating layer and between the second conductive layer and the insulating layer.
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p.ex. fils de connexion ou bornes
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,
[Problem] To provide a laminate with excellent thermal durability, and a laminate production method. [Solution] A laminate, etc., comprising a first resin layer, a first conductive layer, an insulation layer, a second conductive layer, and a second resin layer in the stated order, in which the first resin layer has a housing section.
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,
5.
COMPOSITE PARTICLES, BINDER COMPOSITION FOR NON-AQUEOUS SECONDARY BATTERY AND NON-AQUEOUS SECONDARY BATTERY ELECTRODE
The composite particles contain a copolymer and a tackifier, wherein: the copolymer has a first structural unit derived from monomer (a1) and a second structural unit derived from monomer (a2); the monomer (a1) is a nonionic compound having only one ethylenically unsaturated bond; and the monomer (a2) is a compound having a carboxy group and only one ethylenically unsaturated bond.
C08L 101/08 - Compositions contenant des composés macromoléculaires non spécifiés caractérisées par la présence de groupes déterminés contenant des atomes d'oxygène des groupes carboxyle
C08L 65/00 - Compositions contenant des composés macromoléculaires obtenus par des réactions créant une liaison carbone-carbone dans la chaîne principale; Compositions contenant des dérivés de tels polymères
H01M 4/13 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication
The present invention makes it possible to acquire a spheroid region with high accuracy from an image that includes a spheroid having a non-uniform contour as an object to be imaged. An image processing method according to the present invention comprises: an image acquisition step for acquiring an image including a spheroid as an object to be imaged; a binarization step for obtaining a binarized image by binarizing the acquired image; a region segmentation step for obtaining a candidate spheroid region by performing region segmentation on the binarized image; and an ellipse fitting step for applying ellipse fitting to the candidate spheroid region.
NEGATIVE ELECTRODE MATERIAL FOR LITHIUM-ION SECONDARY BATTERY, NEGATIVE ELECTRODE MATERIAL COMPOSITION FOR LITHIUM-ION SECONDARY BATTERY, NEGATIVE ELECTRODE FOR LITHIUM-ION SECONDARY BATTERY, AND LITHIUM-ION SECONDARY BATTERY
A negative electrode material for a lithium-ion secondary battery comprising graphite particles satisfying x≥2.0 when a compressive load required to consolidate to 1.7 g/cm3 in autograph measurement is x (kN/cm2), 5.0≤y≤20.0 when, a particle size at which a cumulative volume from a small diameter side of a volume-based particle size distribution measured by a laser diffraction method reaches 50% is y, the above mentioned x and y satisfy the following Formula (1), and a degree of graphitization satisfies 90.0% or more:
A negative electrode material for a lithium-ion secondary battery comprising graphite particles satisfying x≥2.0 when a compressive load required to consolidate to 1.7 g/cm3 in autograph measurement is x (kN/cm2), 5.0≤y≤20.0 when, a particle size at which a cumulative volume from a small diameter side of a volume-based particle size distribution measured by a laser diffraction method reaches 50% is y, the above mentioned x and y satisfy the following Formula (1), and a degree of graphitization satisfies 90.0% or more:
11.3x−0.66y+1.4≥14.5 (1).
H01M 4/583 - Matériau carboné, p.ex. composés au graphite d'intercalation ou CFx
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
8.
SOLDER PASTE, METHOD FOR FORMING SOLDER BUMPS, AND METHOD FOR PRODUCING MEMBER WITH SOLDER BUMPS
A method for forming solder bumps by using a solder paste containing solder particles, a flux, and a volatile dispersion medium, the method including: applying the solder paste on a member having a plurality of electrodes on the surface; heating the member and the solder paste at a temperature below the melting point of solder constituting the solder particles to form a solder particle-containing layer; heating the member and the solder particle-containing layer at a temperature equal to or higher than the melting point of the solder constituting the solder particles to form solder bumps; and removing, by cleaning, a residue of the solder particle-containing layer remaining between adjacent solder bumps, in which the solder particles have an average particle size of 10 μm or less, and the content of the dispersion medium in the solder paste is 30% by mass or more.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
9.
HEAT CONDUCTING COMPOSITION AND CURED PRODUCT THEREOF
A heat conducting composition containing a curable silicone resin (A) and 70 to 98% of a thermally conductive powder (B) containing 30 to 75% of aluminum nitride particles (B-1) having a 50% particle size of 50 to 150 μm, 10 to 30% by mass of aluminum nitride particles (B-2) having a 50% particle size of 15 to less than 50 μm, 5 to 15% of a metal oxide (B-3) other than zinc oxide having a 50% particle size of 1 to less than 20 μm, and 10 to 40% of zinc oxide (B-4) having a 50% particle size of 0.1 to less than 1 μm and a BET specific surface area of less than 9.0 m2/g. The metal oxide (B-3) and the zinc oxide (B-4) are both surface treated with a surface treatment agent selected from a silane coupling agent having an C10-C22 alkyl group and α-butyl-ω-(2-trimethoxysilylethyl)polydimethylsiloxane.
The present invention provides a fluorine-containing ether compound represented by the following Formula. R1-[B]-[A]-CH2—R2—CH2-[C]-[D]-R3 (R2 is a perfluoropolyether chain; [A] is Formula (2-1); [B] is Formula (2-2); [C] is Formula (3-1); [D] is Formula (3-2); R3 is Formula (4); and R1 is a terminal group.)
The present invention provides a fluorine-containing ether compound represented by the following Formula. R1-[B]-[A]-CH2—R2—CH2-[C]-[D]-R3 (R2 is a perfluoropolyether chain; [A] is Formula (2-1); [B] is Formula (2-2); [C] is Formula (3-1); [D] is Formula (3-2); R3 is Formula (4); and R1 is a terminal group.)
Provided are an information search device, a method, and a program which acquire a link to unstructured data matched to structure data. The information search device comprises: a graph drawing unit which performs drawing as the structured data; a graph extraction range acquisition unit which extracts one or a plurality of data points in the drawn graph; and an in-graph extraction range data acquisition unit which acquires a table including the structured data including the extracted data points and the link to the unstructured data.
G06F 3/0481 - Techniques d’interaction fondées sur les interfaces utilisateur graphiques [GUI] fondées sur des propriétés spécifiques de l’objet d’interaction affiché ou sur un environnement basé sur les métaphores, p.ex. interaction avec des éléments du bureau telles les fenêtres ou les icônes, ou avec l’aide d’un curseur changeant de comport
G06F 16/248 - Présentation des résultats de requêtes
12.
DESIGN ASSISTANCE DEVICE, DESIGN ASSISTANCE METHOD, PROGRAM, AND INFORMATION PROCESSING SYSTEM
Provided is a design assistance device which uses a machine-learning model in which a correspondence relation between design condition information about a material for blending a plurality of raw materials and the characteristic information about the material has been trained, and assists in designing the material for blending the plurality of raw materials, wherein the design assistance device comprises: a raw material information storage unit which is configured to store the names of and a plurality of pieces of attribute information about a plurality of registered raw materials; a registration reception unit which is configured to receive inputs of the name of and attribute information about a raw material to be newly registered and store the inputs in the raw material information storage unit; and a feature amount generation unit which is configured to generate feature amounts, which can be input to the machine-learning model, of the raw material from the pieces of attribute information about the plurality of raw materials, the pieces of attribute information being stored in the raw material information storage unit and selected as the design condition information.
G16C 60/00 - Science informatique des matériaux, c. à d. TIC spécialement adaptées à la recherche des propriétés physiques ou chimiques de matériaux ou de phénomènes associés à leur conception, synthèse, traitement, caractérisation ou utilisation
13.
THERMOSETTING RESIN COMPOSITION, PREPREG, LAMINATE, METAL-CLAD LAMINATE, PRINTED WIRING BOARD, AND HIGH-SPEED COMMUNICATION COMPATIBLE MODULE
A thermosetting resin composition containing a maleimide compound (a) having at least one N-substituted maleimide group, and a compound (b) represented by the following general formula (1) exhibiting no reactivity with the maleimide group of the component (a) (Xb1 represents a single bond or a substituted or unsubstituted aliphatic hydrocarbon group having 1 to 5 carbon atoms; Rb1 and Rb2 each independently represent a substituted or unsubstituted aliphatic hydrocarbon group having 1 to 10 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 18 ring carbon atoms, a substituted or unsubstituted heterocyclic aromatic hydrocarbon group having 5 to 20 ring atoms, an oxygen atom-containing group, or a group containing a combination of these groups; and m and n each independently represent an integer of 0 to 5).
A thermosetting resin composition containing a maleimide compound (a) having at least one N-substituted maleimide group, and a compound (b) represented by the following general formula (1) exhibiting no reactivity with the maleimide group of the component (a) (Xb1 represents a single bond or a substituted or unsubstituted aliphatic hydrocarbon group having 1 to 5 carbon atoms; Rb1 and Rb2 each independently represent a substituted or unsubstituted aliphatic hydrocarbon group having 1 to 10 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 18 ring carbon atoms, a substituted or unsubstituted heterocyclic aromatic hydrocarbon group having 5 to 20 ring atoms, an oxygen atom-containing group, or a group containing a combination of these groups; and m and n each independently represent an integer of 0 to 5).
C08J 5/24 - Imprégnation de matériaux avec des prépolymères pouvant être polymérisés en place, p.ex. fabrication des "prepregs"
C08F 283/04 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères prévus par la sous-classe sur des polycarbonamides, des polyesteramides ou des polyimides
A SiC epitaxial wafer according to the present embodiment includes: a SiC substrate; and a SiC epitaxial layer laminated on the SiC substrate, in which a carrier concentration uniformity of the SiC epitaxial layer is less than 3.8%, and the carrier concentration uniformity is a value obtained by dividing, by an average value, a difference between a maximum value and a minimum value of carrier concentrations of the SiC epitaxial layer measured along a straight line passing through a center of the SiC epitaxial layer when seen in a plan view.
Provided is a film-form adhesive configured from a resin composition that has thermal curing properties and contains a filler, the film-form adhesive being of a single-layer structure that has a first surface and a second surface, wherein the film-form adhesive has a region in which the filler content decreases from the second-surface side toward the first-surface side, the region being near the first surface of the film-form adhesive.
C09J 133/00 - Adhésifs à base d'homopolymères ou de copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un seul radical carboxyle, o; Adhésifs à base de dérivés de tels polymères
C09J 201/00 - Adhésifs à base de composés macromoléculaires non spécifiés
H01L 23/29 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par le matériau
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
16.
FILM-LIKE ADHESIVE AGENT, ADHESIVE FILM, DICING/DIE-BONDING INTEGRATED FILM, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
This film-like adhesive agent is formed of a resin composition having thermosetting properties and containing a filler, and has a single-layer structure including a first surface and a second surface. The film-like adhesive agent has a region A which is near the first surface and in which the contained amount of the filler decreases from the second surface side toward the first surface side, and a region B in which the contained amount of the filler does not substantially change in a direction toward the first surface side from the second surface side of the film-like adhesive agent. When the film-like adhesive agent is cured by heating, formula (1) is satisfied where a (nm) represents the thickness of the region A of the film-like adhesive agent after heat curing, and b (Pa) represents the elastic modulus of the region B, and c (Pa) represents the elastic modulus of mica. (1): a × (b/c) > 50
C09J 133/00 - Adhésifs à base d'homopolymères ou de copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un seul radical carboxyle, o; Adhésifs à base de dérivés de tels polymères
C09J 201/00 - Adhésifs à base de composés macromoléculaires non spécifiés
H01L 23/29 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par le matériau
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
17.
METHOD FOR PRODUCING PROTECTED GLYCOSIDE DERIVATIVE
Provided is a method for producing a protected glycoside in which a phenol compound is bonded to the anomeric position of a saccharide and other hydroxyl groups in the saccharide are protected, the method comprising reacting a saccharide, in which all hydroxyl groups of the saccharide are protected by protecting groups and protecting groups for the hydroxyl group at the 1-position and the hydroxyl group at the 2-position are acyl groups, and a phenol compound in the presence of at least one type of catalyst selected from the group consisting of trifluoromethanesulfonic acid and copper (II) trifluoromethanesulfonate.
Disclosed is a resin member including: a resin component which develops adhesive properties due to being irradiated with light; and a light radical generating agent. The storage modulus at 25°C of the resin member is 400 kPa or more. The storage modulus at 25°C of the resin member after being irradiated with exposure light of 30 J/cm2 is 200 kPa or less.
The present disclosure relates to a resin material which contains a compound A that has a (meth)acryloyl group, a compound B that has two or more thiol groups, and photoradical generator that has a 5% weight loss temperature of 200°C or more, wherein: the compound A contains a compound A-1 that has three or more (meth)acryloyl groups; and at least one of the compound A and the compound B has a disulfide bond.
Disclosed is a resin material. The resin material contains a compound A having two or more isocyanate groups, a compound B having two or more thiol groups, and a photoradical generator having a 5% weight loss temperature of 200°C or more. At least one of compound A and compound B has a disulfide bond in the molecule.
A resin molded product includes a main body including a design face and a opposite face opposite to the design face and having a first foamed layer formed inside the main body, and a protruding portion located at a periphery of the main body, having a second foamed layer formed inside the protruding portion, and protruding to a thickness direction of the main body and a side opposite to the design face, the protruding portion includes a tip end portion disposed so that a protruding tip portion on the design face extends to a protruding direction of the protruding portion more than a protruding tip portion on the opposite face, and a thickness of the tip end portion is 1.2 mm or less.
B32B 5/18 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches contient un matériau sous forme de mousse ou essentiellement poreux
B32B 1/00 - Produits stratifiés ayant essentiellement une forme générale autre que plane
B32B 3/04 - Caractérisés par des caractéristiques de forme en des endroits déterminés, p.ex. au voisinage des bords caractérisés par une couche pliée au bord, p.ex. par-dessus une autre couche
B32B 7/02 - Propriétés physiques, chimiques ou physicochimiques
A heating element configuration that can maintain heat dissipation performance when a configuration of a thermally conductive member is changed is proposed. A proposal device includes a reference performance calculation unit that calculates heat dissipation performance based on a reference model representing a configuration of a semiconductor device with a multi-layered thermally conductive member includes a heating element; a comparative performance calculation unit that calculates heat dissipation performance based on a comparative model in which a configuration of the thermally conductive member of the reference model is changed; a proposed configuration generation unit that generates a proposed model in which a configuration of the heating element of the comparative model is changed such that the heat dissipation performance based on the comparative model is equivalent to the heat dissipation performance based on the reference model; and a result output unit that outputs information based on the proposed model.
G06F 30/20 - Optimisation, vérification ou simulation de l’objet conçu
H01L 23/12 - Supports, p.ex. substrats isolants non amovibles
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p.ex. dissipateurs de chaleur
24.
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, CURABLE RESIN COMPOSITION FOR TEMPORARY FIXATION MATERIAL, FILM FOR TEMPORARY FIXATION MATERIAL, AND LAMINATED FILM FOR TEMPORARY FIXATION MATERIAL
Disclosed is a semiconductor device manufacturing method, including a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.
C09J 4/06 - Adhésifs à base de composés non macromoléculaires organiques ayant au moins une liaison non saturée carbone-carbone polymérisable en combinaison avec un composé macromoléculaire autre qu'un polymère non saturé des groupes
B32B 7/12 - Liaison entre couches utilisant des adhésifs interposés ou des matériaux interposés ayant des propriétés adhésives
B32B 17/06 - Produits stratifiés composés essentiellement d'une feuille de verre ou de fibres de verre, de scorie ou d'une substance similaire comprenant du verre comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 37/12 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par l'usage d'adhésifs
B32B 43/00 - Opérations spécialement adaptées aux produits stratifiés et non prévues ailleurs, p.ex. réparation; Appareils pour ces opérations
C09J 7/30 - Adhésifs sous forme de films ou de pellicules caractérisés par la composition de l’adhésif
C09J 11/04 - Additifs non macromoléculaires inorganiques
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
A SiC epitaxial wafer including: a SiC substrate; and a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein a diameter of the SiC substrate is 195 mm or more, and a warp is 50 μm or less.
Provided is a mold release film including a mold release layer and a base material layer, the elongation rate at break of the mold release layer being 120% or greater, and the average thickness of the mold release layer being 5 μm or greater.
B29C 43/18 - Moulage par pressage, c. à d. en appliquant une pression externe pour faire couler la matière à mouler; Appareils à cet effet pour la fabrication d'objets de longueur définie, c. à d. d'objets séparés en incorporant des parties ou des couches préformées, p.ex. moulage par pressage autour d'inserts ou sur des objets à recouvrir
B29C 45/02 - Moulage par transfert, c. à d. en transférant par un piston le volume déterminé de matière à mouler d'une cavité de charge à une cavité de moulage
B29C 45/14 - Moulage par injection, c. à d. en forçant un volume déterminé de matière à mouler par une buse d'injection dans un moule fermé; Appareils à cet effet en incorporant des parties ou des couches préformées, p.ex. moulage par injection autour d'inserts ou sur des objets à recouvrir
B32B 27/00 - Produits stratifiés composés essentiellement de résine synthétique
27.
METHOD FOR PRODUCING CATALYST FOR VINYL ACETATE PRODUCTION AND METHOD FOR PRODUCING VINYL ACETATE
A method for producing a catalyst for vinyl acetate production comprising a support, copper, palladium, gold, and an acetic acid salt, the method comprising, in the following order, step 1, in which an alkali solution is infiltrated into the support, step 2, in which the support is brought into contact and impregnated with a solution in which a copper-containing compound, a palladium-containing compound, and a gold-containing compound are contained in excess with respect to desired deposition amounts of the catalyst components, step 3, in which, after the catalyst components have been deposited in the desired deposition amounts, the support is separated from the solution, step 4, in which the support is brought into contact with water or an aqueous solution each having a pH of 7.0-11.5, step 5, in which a reduction treatment is conducted, and step 6, in which the acetic acid salt is deposited on the support.
B01J 31/28 - Catalyseurs contenant des hydrures, des complexes de coordination ou des composés organiques contenant en outre des composés métalliques inorganiques non prévus dans les groupes du groupe du platine, du cuivre ou du groupe du fer
B01J 37/02 - Imprégnation, revêtement ou précipitation
C07C 67/055 - Préparation d'esters d'acides carboxyliques par réaction d'acides carboxyliques ou d'anhydrides symétriques sur des liaisons carbone-carbone non saturées avec oxydation en présence des métaux du groupe du platine ou de leurs composés
A method for manufacturing a catalyst for manufacture of vinyl acetate, the catalyst containing a carrier, copper, palladium, gold, and an acetate, wherein the method comprises, in the following order: step 1) a step for impregnating the carrier with an alkaline solution; step 2) a step for contact-impregnating the carrier with a solution that contains a copper-containing compound, a palladium-containing compound, and a gold-containing compound, the amount of the solution exceeding a desired amount of carried catalyst components; step 3) a step for separating the carrier from the solution once the desired amount of carried catalyst components is carried by the carrier; step 4) a step for performing reduction treatment; and step 5) a step for causing the carrier to carry the acetate.
B01J 31/28 - Catalyseurs contenant des hydrures, des complexes de coordination ou des composés organiques contenant en outre des composés métalliques inorganiques non prévus dans les groupes du groupe du platine, du cuivre ou du groupe du fer
B01J 37/02 - Imprégnation, revêtement ou précipitation
C07C 67/055 - Préparation d'esters d'acides carboxyliques par réaction d'acides carboxyliques ou d'anhydrides symétriques sur des liaisons carbone-carbone non saturées avec oxydation en présence des métaux du groupe du platine ou de leurs composés
Provided is a method for producing a glycoside having such a structure that a phenolic compound is bound to the anomeric position in a sugar, the method comprising a step (1) for reacting a peracetylated sugar with a phenolic compound in the presence of an acid catalyst and a step (2) for directly adding a deacetylating agent and a deacetylation solvent selected from the group consisting of water and an alcohol to a reaction mixture produced in the step (1) to perform a deacetylation reaction.
Provided is a polymerizable composition containing a polymerizable compound, said polymerizable composition comprising: (A) a borate anion; and (B) at least one selected from the group consisting of aromatic carboxylic acids having two or more hydroxy groups, salts of the aromatic carboxylic acids, and hydrates of the aromatic carboxylic acids.
An adhesive agent composition comprising: a radical-polymerizable compound; a radical polymerization initiator; a compound having a nitrogen-containing aromatic heterocyclic ring; and particles containing at least one metal compound selected from the group consisting of metal hydroxides and metal oxides.
This simulation method comprises: preparing a simulation model of a semiconductor device including a substrate, an element, a connecting part which electrically connects the substrate and the element, and a reinforcing material which is disposed on a peripheral part of the element; and calculating an amount of strain applied to the connection part in the simulation model.
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H01L 23/28 - Capsulations, p.ex. couches de capsulation, revêtements
33.
LAMINATED FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
This laminated film comprises in the order given: an adhesive layer containing a thermoplastic resin, a thermosetting resin, a curing agent, and a flux compound having two carboxyl groups; a pressure-sensitive adhesive layer; and a base material layer, wherein the flux compound contains at least one compound selected from the group consisting of compounds having an aromatic ring, compounds having an aliphatic ring, and compounds for which the number of constituent atoms in the main chain is 4, 6, 8 or more.
C09J 7/35 - Adhésifs sous forme de films ou de pellicules caractérisés par la composition de l’adhésif activés par chauffage
C09J 11/06 - Additifs non macromoléculaires organiques
C09J 163/00 - Adhésifs à base de résines époxy; Adhésifs à base de dérivés des résines époxy
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,
34.
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, WIRING BOARD, AND SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device is disclosed. The method for manufacturing a semiconductor device includes preparing a base material, preparing a plurality of semiconductor elements each having a connection terminal, preparing a wiring board provided with a first wiring, arranging the plurality of semiconductor elements on the base material, covering the plurality of semiconductor elements on the base material with an insulating material, arranging the wiring board on at least one of the plurality of semiconductor elements so that the first wiring is connected to at least some of the connection terminals of the plurality of semiconductor elements covered with the insulating material, and forming a second wiring around the first wiring. The first wiring has finer wiring than the second wiring.
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
35.
LITHIUM ION CONDUCTIVE SOLID ELECTROLYTE AND ALL-SOLID-STATE BATTERY
Provided is a novel solid electrolyte having excellent lithium ion conductivity.
Provided is a novel solid electrolyte having excellent lithium ion conductivity.
The lithium ion conductive solid electrolyte of the present invention includes a chalcogenide having a monoclinic crystal structure, wherein
the monoclinic crystal has an a-axis length of 9.690 to 9.711 Å, a b-axis length of 11.520 to 11.531 Å, a c-axis length of 10.680 to 10.695 Å, and an axis angle β in the range of 90.01 to 90.08°. The all-solid-state battery of the present invention includes a positive electrode having a positive electrode active material, a negative electrode having a negative electrode active material, and a solid electrolyte layer between the positive electrode and the negative electrode, wherein the solid electrolyte layer includes the lithium ion conductive solid electrolyte.
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p.ex. LiMn2O4 ou LiMn2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
36.
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, STRUCTURE, AND SEMICONDUCTOR DEVICE
Disclosed is a method for manufacturing a semiconductor device. This method for manufacturing a semiconductor device comprises the steps for: preparing a structure that has an interposer that including a first main surface and a second main surface opposite to the first main surface and having formed therein a groove portion dividing the first main surface into a plurality of regions, and a plurality of semiconductor elements arranged at least one by one on each region; sealing at least a part of each of the plurality of semiconductor elements with a sealing member in such a manner that the sealing member is arranged in at least the groove portion; grinding the interposer from the second main surface toward the first main surface so as to expose the sealing member arranged in the groove portion; and dividing the structure into a plurality of individual regions by cutting the sealing member along the groove portion, to acquire a plurality of semiconductor devices.
H01L 23/12 - Supports, p.ex. substrats isolants non amovibles
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p.ex. cloisonnement en zones séparées
37.
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND STRUCTURE
The present invention discloses a method for producing a semiconductor device. This method for producing a semiconductor device comprises: a step for preparing a structure that comprises an interposer which has a first main surface and a second main surface that is opposite to the first main surface, while being provided with a plurality of grooves that divide the first main surface into a plurality of mounting regions, and a plurality of semiconductor elements, at least one of which is arranged on each mounting region, with the grooves including at least two grooves that are parallel to each other; a step in which at least a part of each one of the plurality of semiconductor elements is sealed with a sealing material such that the sealing material is arranged at least in the plurality of grooves; a step in which the interposer is polished from the second main surface toward the first main surface so that the sealing material arranged in the plurality of grooves is exposed; and a step in which a plurality of semiconductor devices are obtained by cutting the sealing material along the grooves, thereby separating the plurality of regions of the structure into individual pieces.
H01L 23/12 - Supports, p.ex. substrats isolants non amovibles
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p.ex. cloisonnement en zones séparées
38.
ELECTRODE MATERIAL, ELECTRODE FOR ENERGY STORAGE DEVICES, AND ENERGY STORAGE DEVICE
An electrode material containing composite particles that include: particles which include a substance capable of occluding and releasing alkali metal ions; and a coating portion which covers at least a portion of the surfaces of the particles and includes a polymer material and a conduction aid.
H01M 4/13 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
39.
ELECTRODE MATERIAL, ELECTRODE FOR ENERGY STORAGE DEVICES, AND ENERGY STORAGE DEVICE
An electrode material containing composite particles that include: particles A which include a substance capable of occluding and releasing alkali metal ions; and particles B which have an aspect ratio of 10 or higher.
H01M 4/13 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
40.
SEMICONDUCTOR DEVICE PRODUCTION METHOD AND STRUCTURE
This semiconductor device production method is for preparing a structure 200 including: an interposer 60 divided into a plurality of installation areas 65 by groove sections 61 formed therein; and semiconductor elements 202a, 202b arranged on the individual installation areas 65. The semiconductor element 202a is a processor, and the semiconductor element 202a is memory. Each of the groove sections 61 includes two parallel grooves 61a. The semiconductor elements 202a, 202b are sealed in the structure 200 so that a sealing material 80b enters into each of the grooves 61a. The rear surface of the interposer 60 is polished so as to expose the sealing material 80b that has entered into each of the grooves 61a. The sealing material 80b is subsequently cut along the groove sections 61 and a plurality of semiconductor devices 201 are obtained. This method makes it possible to eliminate blade changes and improve production efficiency because only the sealing material 80b is cut when dividing into individual pieces.
H01L 23/12 - Supports, p.ex. substrats isolants non amovibles
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p.ex. cloisonnement en zones séparées
H01L 25/04 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,
41.
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, STRUCTURE, AND SEMICONDUCTOR DEVICE
In this semiconductor device manufacturing method, first a structure 200 is prepared, said structure 200 having an interposer 60, in which a plurality of groove sections 61 for dividing a front surface into a plurality of placement regions 65 are formed, and semiconductor elements 202a, 202b that are positioned on each of the placement regions 65. The semiconductor elements 202a are processors, and the semiconductor elements 202b are memory. In this structure 200, an encapsulant 8 encapsulates the semiconductor elements 202a, 202b so as to penetrate into each groove section 61. A back surface of the interposer 60 is then polished so as to expose the encapsulant 8 that has penetrated into each groove section 61. Afterward, dicing is performed by cutting the encapsulant 8 along the groove sections 61, to obtain a plurality of semiconductor devices 201. With this method, only the encapsulant 8 is cut during dicing, and thus a blade change can be omitted and manufacturing efficiency can be increased.
H01L 23/12 - Supports, p.ex. substrats isolants non amovibles
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p.ex. cloisonnement en zones séparées
H01L 25/04 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,
The present invention provides a method for producing a hydrogen fluoride adsorbent that has a high hydrogen fluoride adsorption capacity. This method for producing a hydrogen fluoride adsorbent comprises: an adsorption step in which a hydrogen fluoride-containing gas that contains hydrogen fluoride and a diluent gas for diluting the hydrogen fluoride, with the hydrogen fluoride concentration being 0.5% by volume to 60% by volume, is brought into contact with a metal fluoride, thereby having the hydrogen fluoride in the hydrogen fluoride-containing gas adsorbed on the metal fluoride so that the proportion of the hydrogen fluoride in the metal fluoride, on which the hydrogen fluoride is adsorbed, is 2% by mass to 25% by mass; and a desorption step in which the metal fluoride, on which hydrogen fluoride has been adsorbed in the adsorption step, is heated at a temperature of 240°C or less in a heat treatment atmosphere gas, thereby having the adsorbed hydrogen fluoride desorbed from the metal fluoride.
B01J 20/04 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation contenant une substance inorganique contenant des composés des métaux alcalins, des métaux alcalino-terreux ou du magnésium
B01J 2/00 - Procédés ou dispositifs pour la granulation de substances, en général; Traitement de matériaux particulaires leur permettant de s'écouler librement, en général, p.ex. en les rendant hydrophobes
B01J 20/30 - Procédés de préparation, de régénération ou de réactivation
A recording and reproducing device of the present invention includes, a case; at least one recording medium having a disk-shape, a motor configured to rotate the at least one recording medium, a head configured to read or write information from or to the at least one recording medium, and an actuator configured to drive the head to scan in a radial direction of the at least one recording medium which are provided in the case; and a regulating portion configured to, when an external shock is applied to the at least one recording medium, contact an outer peripheral edge of the at least one recording medium to regulate displacements of the at least one recording medium due to bending of the at least one recording medium, wherein the regulating portion includes a regulating member which is rotatable about an axis parallel to a rotation axis of the at least one recording medium.
Provided is a method for manufacturing a semiconductor package such as CoWoS-L, the method including: preparing an intermediate structure having a base material with a first main surface and a second main surface on the rear side of the first main surface, and a rewiring layer provided on the first main surface and having an insulating resin layer and wiring, the base material having a resin part that includes a through-hole penetrating from the first main surface to the second main surface, and the rewiring layer forming a trench having a bottom surface where the through-hole is exposed; and cutting the through-hole along the trench to thereby form a plurality of wiring structures having split base materials.
Disclosed is a method for manufacturing a semiconductor package of InFO-L or the like, the method comprising: preparing an intermediate structure that comprises a base material having a first main surface and a second main surface on the back side thereof, and a rewiring layer that is provided on the first main surface and includes an insulating resin layer and wiring, the base material having a resin portion including a through-portion penetrating through the base material from the first main surface to the second main surface, and the rewiring layer forming a trench with a bottom surface on which the through-portion is exposed; and cutting the through-portion along the trench to form a plurality of wiring structures having the base material divided by the cutting.
Disclosed is a method for manufacturing a semiconductor package, the method comprising: preparing an intermediate structure that has a base material having a first main surface and a second main surface on a back side of the first main surface, and a re-wiring layer having an insulating resin layer and a wiring line, the base material having a resin portion that includes a through-hole passing from the first main surface to the second main surface, and the wiring layer forming a trench having a bottom surface exposed by the through-hole; and cutting a through-hole along the trench and forming a plurality of wiring line structures having a base material divided by the cutting.
A recording and reproducing device includes, a case; at least one recording medium having a disk-shape, a motor configured to rotate the at least one recording medium, a head configured to read or write information from or to the at least one recording medium, and an actuator configured to drive the head to scan in a radial direction of the at least one recording medium which are provided in the case; and a regulating portion configured to, when an external shock is applied to the at least one recording medium, contact an outer peripheral edge of the at least one recording medium to regulate displacements of the at least one recording medium due to bending of the at least one recording medium, wherein the regulating portion has a regulating member displaced between a position away from the outer peripheral edge of the at least one recording medium and a contact-possible position or a contacting position.
A conductive member includes an adhesive layer and a metal foil layer. The adhesive layer consists of an adhesive composition containing conductive particles. The metal foil layer is disposed on the adhesive layer. The conductive member can be used to form, for example, a predetermined metal film.
H01L 23/552 - Protection contre les radiations, p.ex. la lumière
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
A recording and reproducing device of the present invention includes, a case; at least one recording medium having a disk-shape, a motor configured to rotate the at least one recording medium, a head configured to read or write information from or to the at least one recording medium, and an actuator configured to drive the head to scan in a radial direction of the at least one recording medium which are provided in the case; and a regulating portion configured to, when an external shock is applied to the at least one recording medium, contact an outer peripheral edge of the at least one recording medium to regulate displacements of the at least one recording medium due to bending of the at least one recording medium, wherein the regulating portion includes a regulating member which is movable in an axial direction parallel to a rotation axis of the at least one recording medium.
The present invention discloses a method for manufacturing an electronic component, the method comprising: preparing an intermediate structure comprising a substrate having a first main surface and a second main surface on the rear side of the first main surface and a wiring layer provided on the first main surface and having an insulating resin layer and wiring, the substrate having a resin portion including a penetration portion extending through the substrate from the first main surface to the second main surface, the wiring layer forming a trench having a bottom surface where the penetration portion is exposed; and cutting the penetration portion along the trench to form a plurality of wiring structures having the substrate divided through the cutting.
Provided is a method for producing iodine heptafluoride, whereby it becomes possible to produce iodine heptafluoride having a reduced iodine gas content with high yield. The method for producing iodine heptafluoride comprises: a preparation step for preparing a liquid mixture containing iodine pentafluoride and hydrogen fluoride, in which the content of hydrogen fluoride is 0.1% by mass to 20% by mass inclusive relative to the content of iodine pentafluoride; a vaporization step for mixing a fluorine gas with the liquid mixture to vaporize the liquid mixture, thereby producing a raw material mixture gas containing a iodine pentafluoride gas, a hydrogen fluoride gas and a fluorine gas; and a reaction step for reacting the raw material mixture gas in the presence of a catalyst to produce iodine heptafluoride.
Provided is a fluorine-containing ether compound represented by the following formula. R122-R2a22-R3a22-R2b22-R3b22-R2c22-R3c22-R2d22-R4(R2a, R2b, R2c,and R2dare perfluoropolyether chains. R3a, R3b, and R3care divalent linking groups having at least one polar group. At least one among R3a, R3b, and R3c222O-. R1and R4 are C1-C50 terminal groups having at least one polar group, and may be the same as or different from each other.)
C07C 43/13 - Ethers saturés contenant des groupes hydroxyle ou O-métal
B32B 33/00 - Produits stratifiés caractérisés par des propriétés particulières ou des caractéristiques de surface particulières, p.ex. par des revêtements de surface particuliers; Produits stratifiés conçus pour des buts particuliers non couverts par une seule autre classe
C07C 41/03 - Préparation d'éthers à partir d'oxiranes par réaction d'un cycle oxirane avec un groupe hydroxyle
C10M 105/54 - Compositions lubrifiantes caractérisées en ce que le matériau de base est un composé organique non macromoléculaire contenant des halogènes contenant du carbone, de l'hydrogène, des halogènes et de l'oxygène
C10N 30/00 - Propriétés physiques ou chimiques particulières améliorées par l'additif caractérisant la composition lubrifiante, p.ex. additifs multifonctionnels
C10N 30/12 - Inhibition de la corrosion, p.ex. agents antirouille, agents anticorrosifs
C10N 40/18 - Usages électriques ou magnétiques en relation avec des enregistrements sur bandes ou disques magnétiques
53.
CHLORINE GAS DECOMPOSITION CATALYST, EXHAUST GAS TREATMENT DEVICE, AND METHOD FOR DECOMPOSING CHLORINE GAS
To provide a means removing chlorine gas, which can remove chlorine gas contained in, for example, exhaust gas with high efficiency and does not require frequent exchange. A chlorine gas decomposition catalyst including a metal oxide (X), wherein the metal oxide (X) includes an oxide (X1) of at least one element selected from the group consisting of Ce and Co.
An adhesive film for circuit connection comprising a first adhesive layer having thermosettability, conductive particles partially embedded in one side of the first adhesive layer, and a second adhesive layer that has thermosettability and contacts one side of the first adhesive layer, the embedding rate of conductive particles in the first adhesive layer being 30-90% and the ratio of the flow rate of the second adhesive layer to the flow rate of the first adhesive layer being 1.20-4.00.
C09J 11/04 - Additifs non macromoléculaires inorganiques
C09J 201/00 - Adhésifs à base de composés macromoléculaires non spécifiés
H01B 1/00 - Conducteurs ou corps conducteurs caractérisés par les matériaux conducteurs utilisés; Emploi de matériaux spécifiés comme conducteurs
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H01R 11/01 - CONNEXIONS CONDUCTRICES DE L'ÉLECTRICITÉ; ASSOCIATION STRUCTURELLE DE PLUSIEURS ÉLÉMENTS DE CONNEXION ÉLECTRIQUE ISOLÉS LES UNS DES AUTRES; DISPOSITIFS DE COUPLAGE; COLLECTEURS DE COURANT Éléments de connexion individuels assurant plusieurs emplacements de connexion espacés pour des organes conducteurs qui sont ou qui peuvent être interconnectés de cette façon, p.ex. pièces d'extrémité pour fils ou câbles supportées par le fil ou par caractérisés par la forme ou par la disposition de l'interconnexion entre leurs emplacements de connexion
H05K 3/32 - Connexions électriques des composants électriques ou des fils à des circuits imprimés
55.
CONNECTED BODY OF METAL MATERIALS AND METHOD FOR CONNECTING METAL MATERIALS
A connected body of metal materials having an overlapping portion where an end A of a metal material A and an end B of a metal material B are overlapped via a film composed mainly of a thermoplastic resin, wherein the film is one that has been melted and solidified at the overlapping portion.
B29C 65/42 - Application d'une matière plastique fondue, p.ex. application d'un "hot melt" entre des éléments pré-assemblés
B29C 65/64 - Assemblage d'un élément en matière autre que plastique avec un élément en matière plastique, p.ex. à force
B32B 15/08 - Produits stratifiés composés essentiellement de métal comprenant un métal comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
B65H 37/04 - Appareils délivrant des articles ou des bandes, comportant des dispositifs pour exécuter des opérations auxiliaires particulières pour fixer ensemble des articles ou des bandes, p.ex. par adhésifs, piqûre ou brochage
C09J 7/30 - Adhésifs sous forme de films ou de pellicules caractérisés par la composition de l’adhésif
C09J 163/00 - Adhésifs à base de résines époxy; Adhésifs à base de dérivés des résines époxy
C09J 171/10 - Polyéthers dérivés de composés hydroxylés ou de leurs dérivés métalliques de phénols
56.
METHOD FOR MEASURING ORIENTATION OF SILVER NANOWIRE, POLYVINYL ALCOHOL FILM, METHOD FOR PROCESSING POLYVINYL ALCOHOL FILM, AND METHOD FOR PRODUCING POLYVINYL ALCOHOL FILM
The present method for evaluating an orientation of silver nanowires is a method for measuring an orientation of silver nanowires included in a polyvinyl alcohol film, the method including measuring, using linearly polarized near-infrared light, a first transmittance T1 for polarized light perpendicular to an orientation direction of silver nanowires and a second transmittance T0 for polarized light parallel to the orientation direction of the silver nanowires in a polyvinyl alcohol film including the silver nanowires, and determining an orientation to be high in a case where a ratio (T1/T0) of the first transmittance T1 to the second transmittance T0 is greater than 1, and determining the orientation to be low in a case where the ratio is close to 1.
G01N 21/84 - Systèmes spécialement adaptés à des applications particulières
B29C 55/06 - Façonnage par étirage, p.ex. étirage à travers une matrice; Appareils à cet effet de plaques ou de feuilles suivant un seul axe, p.ex. étirage oblique parallèle à la direction d'alimentation
Provided is a transparent conducting film laminate suitable for three-dimensional molding having a curved surface. A transparent conducting film laminate comprising: a transparent substrate made of a transparent thermoplastic resin film, a transparent conducting film formed on at least one main face of the transparent substrate, and containing a binder resin and a metal nanowire, and a protection film formed on the transparent conducting film, and containing a resin component, wherein the binder resin contains at least on kind of poly-N-vinylacetamide, a copolymer containing 70 mol % or more of N-vinylacetamide (NVA) as a monomer unit, and a cellulose-based resin, and 94% by mass or more of the resin component constituting the protection film is derived from a thermoplastic resin.
Provided is a protective sheet for semiconductor processing. The protective sheet can accurately follow irregularities on an adherend surface and adhere thereto and can be peeled without leaving paste after irradiation with active energy rays, even when the irregularities on the surface are large (large bump height) and also after undergoing a step for conducting high temperature treatment at 200°C, for example. This protective sheet for semiconductor processing has a base material, an intermediate layer, and an adhesive layer, wherein the intermediate layer and the adhesive layer are provided above one principal surface of the base material in the stated order; the intermediate layer is a cured product of a resin composition that contains a cross-linking agent (B1) and a (meth)acrylic resin (A1) containing no ethylenically unsaturated group; the adhesive layer is a cured product of an adhesive composition that contains an ethylenically unsaturated group-containing (meth)acrylic resin (A2), a cross-linking agent (B2), and a photopolymerization initiator (C); and the ethylenically unsaturated group-containing (meth)acrylic resin (A2) is an adduct in which an epoxy group-containing ethylenically unsaturated compound (a2-3) is added to a copolymer of a monomer group (M2) that contains an alkyl (meth)acrylate (a2-1) and a carboxylic group-containing ethylenically unsaturated compound (a2-2).
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p.ex. cloisonnement en zones séparées
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
59.
PROTECTIVE SHEET FOR SEMICONDUCTOR PROCESSING, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Provided is a protective sheet for semiconductor processing, the protective sheet comprising a substrate, and an intermediate layer and an adhesive layer in this order on one main surface of the substrate. The intermediate layer is a cured product of a resin composition comprising a (meth)acrylic resin (A1) not containing an ethylenically unsaturated group, and a crosslinking agent (B1), and the adhesive layer is a cured product of an adhesive composition comprising an ethylenically unsaturated group-containing (meth)acrylic resin (A2), a crosslinking agent (B2), and a photopolymerization initiator (C). The (meth)acrylic resin (A1) not containing an ethylenically unsaturated group has a plurality of functional groups that react with functional groups of the crosslinking agent (B1), and the ethylenically unsaturated group-containing (meth)acrylic resin (A2) has a plurality of functional groups that react with functional groups of the crosslinking agent (B2). The ethylenically unsaturated group-containing (meth)acrylic resin (A2) is an adduct of an epoxy group-containing ethylenically unsaturated compound (a2-3) added to a copolymer of a monomer group (M2) containing an alkyl(meth)acrylate (a2-1) and a carboxyl group-containing ethylenically unsaturated compound (a2-2).
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p.ex. cloisonnement en zones séparées
H01L 21/304 - Traitement mécanique, p.ex. meulage, polissage, coupe
One aspect of the present disclosure relates to a modified styrene elastomer having, on a side chain, an N-substituted succinimide group containing a phenolic hydroxyl group, an isocyanate group, a blocked isocyanate group, a maleimide group, or a benzoxazine group.
C08F 8/30 - Introduction d'atomes d'azote ou de groupes contenant de l'azote
C08F 297/04 - Composés macromoléculaires obtenus en polymérisant successivement des systèmes différents de monomère utilisant un catalyseur de type ionique ou du type de coordination sans désactivation du polymère intermédiaire utilisant un catalyseur du type anionique en polymérisant des monomères vinylaromatiques et des diènes conjugués
61.
MALEIMIDE-MODIFIED STYRENIC ELASTOMER, AND METHOD FOR PRODUCING MALEIMIDE-MODIFIED STYRENIC ELASTOMER
The present disclosure relates to: a maleimide-modified styrenic elastomer which is obtained by reacting a modified styrenic elastomer having a group represented by formula (1), a diamine compound, and maleic anhydride, and which has a group represented by the following formula (3) (in the formulae, A1 represents a residue of a diamine compound, and * represents a bonding portion.); and a method for producing a maleimide-modified styrenic elastomer.
Provided is a method for producing a surface-treated thermally conductive filler, the method including treating the surface of the thermally conductive filler with an alkoxysilane having a specific structure by the chemical vapor deposition method.
A molded body, comprising a foamed portion in which a skin layer A, a foamed layer and a skin layer B are disposed in this order in a thickness direction, wherein in the foamed portion, the foamed layer has a ratio of thickness, with respect to a total thickness of the skin layer A, the foamed layer and the skin layer B, of from 73% to 88%.
B32B 5/14 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par une couche différant en certains endroits du fait de sa constitution ou de sa structure physique, p.ex. plus dense superficiellement
B32B 5/18 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches contient un matériau sous forme de mousse ou essentiellement poreux
B29C 44/08 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage pour la fabrication d'objets de longueur définie, c.à d. d'objets séparés en plusieurs étapes d'expansion
B32B 27/32 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyoléfines
64.
MATERIAL DESIGNING DEVICE, MATERIAL DESIGNING METHOD, AND PROGRAM
The present invention performs local search, which tends to lead to a local solution, while maintaining initial value dependency. This material designing device comprises: a peripheral composition generation unit configured to generate a peripheral composition in which each of factors included in a composition candidate for a target substance is varied in a predetermined search range; a property prediction unit configured to predict the material properties of the target substance on the basis of the peripheral composition; a composition candidate updating unit configured to update the composition candidate with a peripheral composition if the peripheral composition improves the material properties; a search range expanding unit configured to expand the search range in the absence of the peripheral composition that improves the material properties; and a factor exchange unit configured to exchange the factors of the composition candidate when the search range exceeds a predetermined range.
G16C 60/00 - Science informatique des matériaux, c. à d. TIC spécialement adaptées à la recherche des propriétés physiques ou chimiques de matériaux ou de phénomènes associés à leur conception, synthèse, traitement, caractérisation ou utilisation
The present disclosure relates to a resin composition that contains a thermosetting resin and a modified styrene elastomer having an N-substituted succinimide group in a side chain.
C08L 101/00 - Compositions contenant des composés macromoléculaires non spécifiés
C08C 19/22 - Incorporation d'atomes d'azote dans la molécule
C08L 53/02 - Compositions contenant des copolymères séquencés possédant au moins une séquence d'un polymère obtenu par des réactions ne faisant intervenir que des liaisons non saturées carbone-carbone; Compositions contenant des dérivés de tels polymères contenant des monomères vinylaromatiques et des diènes conjugués
One aspect of the present disclosure relates to a modified styrene-based elastomer having, in a side chain thereof, an N-substituted succinimide group containing a fluorine atom or a phosphorus atom.
C08F 8/32 - Introduction d'atomes d'azote ou de groupes contenant de l'azote par réaction avec des amines
C08F 8/40 - Introduction d'atomes de phosphore ou de groupes contenant du phosphore
C08F 8/42 - Introduction d'atomes métalliques ou de groupes contenant des atomes métalliques
C08F 297/04 - Composés macromoléculaires obtenus en polymérisant successivement des systèmes différents de monomère utilisant un catalyseur de type ionique ou du type de coordination sans désactivation du polymère intermédiaire utilisant un catalyseur du type anionique en polymérisant des monomères vinylaromatiques et des diènes conjugués
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Aqueous synthetic resin emulsion for use as a biding agent for electrode of lithium-ion batteries; synthetic resin emulsion for use in the manufacture of electronic materials; synthetic resin emulsion for use as a binding agent for electrode of lithium-ion batteries; synthetic resin emulsion for use in the manufacture of lithium-ion batteries; synthetic resin emulsion for use in the manufacture of paints; synthetic resin emulsion for use in the manufacture of civil engineering material such as paints for paving, mortar, concrete and cement; synthetic resin emulsion for use in fiber processing; synthetic resin emulsion as raw materials for chemical agents used during manufacturing process of paper products; synthetic resin emulsion as raw materials for chemical agents used in ceramic industry; adhesives for industrial purposes; adhesive substances for use in industry; synthetic resin emulsion; adhesives for industrial use; unprocessed synthetic resin.
68.
THERMALLY CONDUCTIVE URETHANE RESIN COMPOSITION AND CURED PRODUCT
A thermally conductive urethane resin composition comprising a castor oil-based polyol, a polyisocyanate compound, and a filler, wherein
an equivalent ratio [NCO/OH] of isocyanato groups of the polyisocyanate compound to hydroxyl groups of the castor oil-based polyol is from 0.8 to 1.6,
the filler comprises a filler (A) having an average particle diameter of 0.03 to 10 μm, and
the filler (A) has been surface-treated with a specific surface treatment agent.
C08G 18/10 - Procédés mettant en œuvre un prépolymère impliquant la réaction d'isocyanates ou d'isothiocyanates avec des composés contenant des hydrogènes actifs, dans une première étape réactionnelle
C08K 9/02 - Ingrédients traités par des substances inorganiques
C08K 9/08 - Ingrédients agglomérés par traitement avec un liant
A negative electrode for an all-solid-state battery, the negative electrode comprising a negative-electrode active material and a solid electrolyte,
the negative-electrode active material comprising a carbon material that has an interplanar spacing (d002) of from 0.336 nm to less than 0.350 nm and a spring-back ratio of 13% or more.
A method for manufacturing a wiring board including: providing a laminate including an insulating material layer and a copper layer provided on a surface of the insulating material layer, and in which the copper layer is an electroless copper plating layer; forming a resist pattern including a groove reaching a surface of the copper layer on the surface of the copper layer; and filling the groove with a conductive material containing copper by electrolytic copper plating. The thickness of the electroless copper plating layer is, for example, 20 nm to 200 nm.
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
H05K 3/10 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché
H05K 3/02 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué à la surface du support isolant et est ensuite enlevé de zones déterminées de la surface, non destinées à servir de conducteurs de courant ou d'éléments de blindage
71.
POLISHING LIQUID, POLISHING LIQUID SET AND POLISHING METHOD
A polishing liquid containing abrasive grains including a hydroxide of a tetravalent metal element, a polymer including a structure unit represented by Formula (1) below, and a liquid medium.
A polishing liquid containing abrasive grains including a hydroxide of a tetravalent metal element, a polymer including a structure unit represented by Formula (1) below, and a liquid medium.
A polishing liquid containing abrasive grains including a hydroxide of a tetravalent metal element, a polymer including a structure unit represented by Formula (1) below, and a liquid medium.
[in Formula (1), * represents a bonding hand.]
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
The present invention relates to a polychloroprene latex composition, a dip-molded product, a pressure-sensitive adhesive, an adhesive, and an adhesive product. The polychloroprene latex composition contains a chloroprene (co)polymer (A) and an aromatic compound (B) having 7 to 10 carbon atoms, and the polychloroprene latex composition has a proportion of the aromatic compound (B) having 7 to 10 carbon atoms of 0.0012 to 0.15 parts by mass based on 100 parts by mass of solid content of the polychloroprene latex composition.
Provided is a method for easily manufacturing a metal-polyolefin bonded body having high bonding strength. This method for manufacturing a metallic member-resin member bonded body comprises: preparing a film that includes at least one modified polyolefin layer selected from the group consisting of a layer containing a reaction product 1 of a maleic anhydride-modified polyolefin, a bifunctional epoxy resin, and a bifunctional phenol compound, a layer containing a reaction product 2 of a maleic anhydride-modified polyolefin and a thermoplastic epoxy resin, and a layer containing a mixture of a polyolefin and a thermoplastic epoxy resin; disposing the film on at least a part of the surface of a metallic substrate so as to expose the modified polyolefin layer, thereby forming a metallic member in which a resin coating layer is laminated on the metallic substrate; and bonding a resin member onto the resin coating layer of the metallic member.
A method for producing a joined object that is formed through joining of a columnar base material A, a thermoplastic film B, and a resin C in this sequence, said method sequentially comprising: step 1 for circumferentially winding the thermoplastic film B around at least a portion of the outer circumference of the columnar base material A; and step 2 for sealing the thermoplastic film B by joining, through insert molding, the resin C with the portion of the columnar base material A in which the thermoplastic film B has been wound.
Disclosed is an adhesive film for circuit connection. This adhesive film for circuit connection comprises: a first adhesive layer containing conductive particles and a thermoplastic resin; and a second adhesive layer provided on the first adhesive layer. The thermoplastic resin includes a resin in which at least some of hydroxy groups in a phenoxy resin are modified with a group represented by formula (1) or formula (1A). [In formula (1), R1represents a hydrogen atom or a methyl group, x represents an integer of 2-6, and y represents an integer of 1-6. * represents a bonding position that is bonded to an oxygen atom derived from a hydroxy group.] [In formula (1A), R1, x, y, and * have the same meanings as above. *1 and *2 each represent a bonding position that is bonded to a carbon atom of another radically polymerizable group.]
C09J 11/06 - Additifs non macromoléculaires organiques
C09J 163/00 - Adhésifs à base de résines époxy; Adhésifs à base de dérivés des résines époxy
C09J 171/10 - Polyéthers dérivés de composés hydroxylés ou de leurs dérivés métalliques de phénols
H01R 11/01 - CONNEXIONS CONDUCTRICES DE L'ÉLECTRICITÉ; ASSOCIATION STRUCTURELLE DE PLUSIEURS ÉLÉMENTS DE CONNEXION ÉLECTRIQUE ISOLÉS LES UNS DES AUTRES; DISPOSITIFS DE COUPLAGE; COLLECTEURS DE COURANT Éléments de connexion individuels assurant plusieurs emplacements de connexion espacés pour des organes conducteurs qui sont ou qui peuvent être interconnectés de cette façon, p.ex. pièces d'extrémité pour fils ou câbles supportées par le fil ou par caractérisés par la forme ou par la disposition de l'interconnexion entre leurs emplacements de connexion
76.
POLYMER EMULSION, AND SINGLE-LIQUID TYPE THERMOSETTING RESIN COMPOSITION, TWO-LIQUID TYPE THERMOSETTING RESIN COMPOSITION, COATING MATERIAL, RESIN CURED FILM, AND COATING FILM USING SAID POLYMER EMULSION
Provided are: a polymer emulsion having excellent preservation stability; and a thermosetting resin composition and the like that contain said polymer emulsion and that have excellent curability at a low temperature. The present invention contains a polymer emulsion (B) that contains water and a polymer (A) including a structural unit (A-1) represented by formula (1). [In formula (1), R1represents a hydrogen atom or a methyl group, R2represents a linear or branched aliphatic saturated hydrocarbon group having 1-20 carbon atoms and a valence of 2-4, and optionally having an ether bond, or an aromatic hydrocarbon group or an alicyclic hydrocarbon group having 6-20 carbon atoms and a valence of 2, and optionally having a urethane bond, R3represents a hydrogen atom, an alkyl group having 1-10 carbon atoms, or a cycloalkyl group or an arylalkyl group having 6-20 carbon atoms, R4 represents a hydrogen atom, an alkyl group having 1-10 carbon atoms, or a cycloalkyl group or an arylalkyl group having 6-20 carbon atoms, and n represents 1 or 2.]
C08F 220/36 - Esters contenant de l'azote contenant de l'oxygène en plus de l'oxygène de la fonction carboxyle
C08L 33/14 - Homopolymères ou copolymères des esters d'esters contenant des atomes d'halogène, d'azote, de soufre ou d'oxygène en plus de l'oxygène du radical carboxyle
C09D 133/14 - Homopolymères ou copolymères d'esters d'esters contenant des atomes d'halogène, d'azote, de soufre ou d'oxygène en plus de l'oxygène du radical carboxyle
A thermally conductive composition comprising: a filler; and a polymer component, wherein the filler comprises at least one surface-treated filler selected from the group consisting of the following filler (A) and filler (B):
Filler (A): A filler surface-treated by a chemical vapor deposition method using a siloxane having one SiH group
Filler (B): A filler surface-treated by a chemical vapor deposition method using a siloxane having two or more SiH groups, wherein at least one group selected from the group consisting of an unsubstituted alkyl group having 6 to 20 carbon atoms, an alkyl group having 2 to 20 carbon atoms having a substituent, and a group having a specific structure is further bonded to a silicon atom on a surface of the filler and introduced.
C09K 5/14 - Substances solides, p.ex. pulvérulentes ou granuleuses
C09C 3/00 - Traitement, en général, de substances inorganiques, autres que des charges fibreuses, pour améliorer leurs propriétés de pigmentation ou de charge
C09C 3/12 - Traitement par des composés organiques du silicium
C09C 3/08 - Traitement par des composés organiques de bas poids moléculaire
A thermally conductive resin composition includes an epoxy resin and a thermally conductive powder. The thermally conductive powder includes aluminum nitride having a silicon-containing oxide coating on a surface thereof and another thermally conductive powder. The content of the epoxy resin is 1% by mass or more and 20% by mass or less based on the total amount of the thermally conductive resin composition. The content of the thermally conductive powder is 80% by mass or more and 99% by mass or less based on the total amount of the thermally conductive resin composition. The content of the aluminum nitride having a silicon-containing oxide coating on a surface thereof is 10% by mass or more and 70% by mass or less based on the total amount of the thermally conductive resin composition. The content of the other thermally conductive powder is 10% by mass or more and 89% by mass or less based on the total amount of the thermally conductive resin composition.
C08G 59/68 - Macromolécules obtenues par polymérisation à partir de composés contenant plusieurs groupes époxyde par molécule en utilisant des agents de durcissement ou des catalyseurs qui réagissent avec les groupes époxyde caractérisées par les catalyseurs utilisés
C08K 9/02 - Ingrédients traités par des substances inorganiques
The present invention provides a method for producing a wiring board, the method comprising: a step for forming a resist layer on a seed layer that contains a metal and is arranged on a main surface of a substrate; a step for exposing the resist layer to light and developing the resist layer so as to provide the resist layer with a pattern that comprises an opening from which the seed layer is exposed; and a step for forming a copper plating layer on the seed layer, which is exposed in the opening, by means of electrolytic plating. The copper plating layer is formed so that the BP occupancy, which is the occupancy of a black part in the width direction of the copper plating layer, the black part being observed in a cross-section of a metal part that contains the seed layer and the copper plating layer, is 45% or less. The resist layer is selected. The BP occupancy is a value that is determined by a method that comprises a calculation of the BP occupancy by the formula.
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
This non-aqueous secondary battery binder polymer has a first structural unit derived from a monomer (a1), a second structural unit derived from a monomer (a2) and a third structural unit derived from a monomer (a3). The monomer (a1) is a non-ionic compound having only one ethylenically unsaturated bond. The monomer (a2) is a compound which has a carboxyl group and has only one ethylenically unsaturated bond. The monomer (a3) is a polyrotaxane having: cyclic molecules each having a cyclic skeleton to which a group having an ethylenically unsaturated bond is bonded; and a chain-like molecule which passes through open parts of the cyclic molecules and has a stopper group at both terminals.
H01M 4/13 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication
The present invention provides a polishing liquid which contains: abrasive grains; an ether compound which has at least one group that is selected from the group consisting of a carboxy group and a carboxylate group; and water. The present invention also provides a polishing liquid set which is obtained by separating the constituents of the above-described polishing liquid into a first liquid and a second liquid for storage, so that the first liquid contains the abrasive grains and water, while the second liquid contains water and the ether compound which has at least one group that is selected from the group consisting of a carboxy group and a carboxylate group. The present invention also provides a polishing method which comprises a step for polishing a surface to be polished with use of the above-described polishing liquid, the surface to be polished containing silicon oxide.
Provided is a method for manufacturing a wiring board, said method comprising: providing a resist layer on a seed layer that includes a metal and that is provided on a main surface of a board; exposing the resist layer to light and developing the same so as to form, on the resist layer, a pattern including an opening from which the seed layer is exposed; and using electrolytic plating to form, on the seed layer exposed in the opening, a copper plating layer including a part having a width of less than 10 μm. The copper plating layer is formed such that a BP occupancy, which is the percent occupied, in the width direction of the copper plating layer, by a black part as observed in a cross section of a metal part including the seed layer and the copper plating layer, is 45% or less. The resist layer is selected. The BP occupancy is a value determined by a method including calculating the BP occupancy by the following expression (expression 1).
H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
83.
FILM-LIKE ADHESIVE AGENT, DICING/DIE-BONDING ALL-IN-ONE FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME
Disclosed is a film-shaped adhesive. An embodiment of the film-shaped adhesive contains metal particles and has a shear viscosity at 110° C. of 30000 Pa·s or less. Another embodiment of the film-shaped adhesive contains metal particles and has a loss modulus at 110° C. of 200 kPa or less. Another embodiment of the film-shaped adhesive contains metal particles, a thermosetting resin, a curing agent, and an elastomer, in which a content of the metal particles based on the total amount of the metal particles, thermosetting resin, curing agent, and elastomer is 70.0% by mass or more, and a total content of the thermosetting resin and the curing agent is 13.0% by mass or more.
H01L 21/82 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
A heat conducting composition including:
a polymer component (A);
a surface-treated filler (B) obtained by surface-treating a filler with α-butyl-ω-(2-trimethoxysilylethyl)polydimethylsiloxane having a weight average molecular weight of 500 to 5,000, with the α-butyl-ω-(2-trimethoxysilylethyl)polydimethylsiloxane having an adhesion percentage to the filler of from 20.0 to 50.0% by mass; and
a silicon-containing oxide-coated nitride (C) having a nitride and a silicon-containing oxide coating that coats the nitride.
In the present invention, a method for manufacturing a negative electrode material for a lithium-ion secondary battery comprises: (a) a step of obtaining a mixture that includes a graphitizable aggregate and a graphitizable binder; (b) a step of molding the mixture to obtain a molded article; (c) a step of graphitizing the molded article to obtain a graphitized article; and (d) a step of pulverizing the graphitized article to obtain a pulverized article, wherein the binder includes an aqueous binder that contains a macromolecular compound that has water solubility or water absorbency.
A fluorine-containing ether compound represented by the following formula is provided. R1—CH2—R2—CH2—R3—CH2—R4—CH2—R5
A fluorine-containing ether compound represented by the following formula is provided. R1—CH2—R2—CH2—R3—CH2—R4—CH2—R5
(In the formula, R3 is a divalent organic group containing at least one polar group and an alicyclic structure having 3 to 13 carbons, and does not contain a perfluoropolyether chain, R2 and R4 are perfluoropolyether chains, and R1 and R5 are terminal groups containing two or three polar groups, in which individual polar groups are bound to different carbon atoms and the carbon atoms to which the polar groups are bound are bound to each other via a linking group containing a carbon atom to which the polar groups are not bound.)
An information processing system according to an embodiment includes at least one processor. The at least one processor is configured to acquire a numerical representation and a combination ratio for each of a plurality of component objects, execute machine learning based on a plurality of the numerical representations to calculate a plurality of regression parameters corresponding to the plurality of component objects, and apply a plurality of the combination ratios to a regression model defined by the plurality of regression parameters to calculate a predicted value indicating characteristics of a composite object obtained by combining plurality of component objects.
A method for manufacturing a semiconductor device, the method including: a step of disposing an adhesive thermal insulation material on a semiconductor device; a step of performing reflow of the semiconductor device having the thermal insulation material disposed thereon; and a step of detaching the thermal insulation material from the semiconductor device.
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A composition containing first hollow particles being thermally expandable hollow particles; second hollow particles being hollow particles other than the first hollow particles; and a polymerizable compound.
C08F 265/08 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères d'acides monocarboxyliques non saturés ou de leurs dérivés tels que définis dans le groupe sur des polymères de nitriles
A composition containing a compound represented by the following Formula (1):
A composition containing a compound represented by the following Formula (1):
A composition containing a compound represented by the following Formula (1):
[in the Formula (1), R11 and R12 each independently represent a hydrogen atom or a methyl group; and R13 represents a divalent group having a polyoxyalkylene chain.]; and hollow particles.
C08F 299/02 - Composés macromoléculaires obtenus par des interréactions de polymères impliquant uniquement des réactions entre des liaisons non saturées carbone-carbone, en l'absence de monomères non macromoléculaires à partir de polycondensats non saturés
91.
LAYERED PLATE AND WIRING BASE BOARD PRODUCTION METHOD
A layered plate including a copper layer having a thickness of 5 μm or less, and a resin layer provided on a surface of the copper layer, in which a water absorption rate of the resin layer is 1% or less after being left in an environment of 130° C. in temperature and 85% in relative humidity for 200 hours.
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H05K 3/02 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué à la surface du support isolant et est ensuite enlevé de zones déterminées de la surface, non destinées à servir de conducteurs de courant ou d'éléments de blindage
The present invention provides a fullerene production device that enables improving fullerene yields. The fullerene production device includes: a reacting furnace (2) in which fullerenes are generated through incomplete combustion of a raw material gas containing a hydrocarbon; a first injection unit (23c) configured to incompletely combust the raw material gas while injecting the raw material gas into the reacting furnace (2) to form a first combustion flame; and a second injection unit (25a) configured to combust an auxiliary gas containing a hydrocarbon that is the same as or different from that in the raw material gas while injecting the auxiliary gas into the reacting furnace (2) to form a second combustion flame.
A negative electrode material for a lithium ion secondary battery, said negative electrode material including graphite particles, wherein the graphite particles satisfy conditions in which, with regard to an R value which is the intensity ratio Id/Ig of the intensity Ig of the maximum peak in the range 1580 cm–1to 1620 cm–1and the intensity Id of the maximum peak in the range 1300 cm–1to 1400 cm–1in a Raman spectrum obtained through Raman spectroscopy, the percentage of particles for which R≥0.2 is greater than or equal to 10% by number, and the average value of the half-value width of Id in the R-value top 10 spectrum is less than or equal to 60 cm–1.
The present invention comprises: a rewiring layer; an electronic circuit chip and an optical circuit chip disposed on the rewiring layer; and a first sealing layer for sealing the electronic circuit chip and the optical circuit chip, wherein the first sealing layer has an opening on a side opposite from the rewiring layer side of the first sealing layer, the position of the opening and the position of the optical circuit chip overlapping at least partially.
A method for producing a (meth)acrylic resin having an ethylenically unsaturated group comprising a step (i) that reversible addition-fragmentation chain transfer (RAFT) polymerizes a raw material monomer group (M) containing a hydroxy group-containing (meth)acrylate (m-1) and an alkyl (meth)acrylate (m-2) to obtain a copolymer (A-0) and a step (ii) that adds an isocyanate group-containing ethylenically unsaturated compound (a) to some of the side chain hydroxy groups of the copolymer (A-0) to obtain a (meth)acrylic resin.
C09J 163/00 - Adhésifs à base de résines époxy; Adhésifs à base de dérivés des résines époxy
C09J 175/00 - Adhésifs à base de polyurées ou de polyuréthanes; Adhésifs à base de dérivés de tels polymères
H01L 21/301 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour subdiviser un corps semi-conducteur en parties distinctes, p.ex. cloisonnement en zones séparées
96.
PLASMA ETCHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
There is provided a plasma etching method capable of selectively etching an etching object containing oxide of at least one of tin and indium compared to a non-etching object. The plasma etching method includes: an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule thereof into contact with a member to be etched including an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas in the presence of plasma, performing etching while applying a bias power exceeding 0 W to a lower electrode supporting the member to be etched, and selectively etching the etching object compared to the non-etching object. The etching object contains oxide of at least one of tin and indium and the non-etching object contains at least one of a silicon-containing compound and a photoresist.
H01L 21/3213 - Gravure physique ou chimique des couches, p.ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
G03F 7/36 - Dépouillement selon l'image non couvert par les groupes , p.ex. utilisant un courant gazeux, un plasma
C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
97.
FLUORINE-CONTAINING ETHER COMPOUND, LUBRICANT FOR MAGNETIC RECORDING MEDIUM, AND MAGNETIC RECORDING MEDIUM
A fluorine-containing ether compound represented by the following formula (1) is provided.
A fluorine-containing ether compound represented by the following formula (1) is provided.
R2—CH2—R1—CH2OCH2CH(OH)—(CH2)n—CH(OH)CH2OCH2—R1—CH2—R2 (1)
A fluorine-containing ether compound represented by the following formula (1) is provided.
R2—CH2—R1—CH2OCH2CH(OH)—(CH2)n—CH(OH)CH2OCH2—R1—CH2—R2 (1)
(in the formula (1), n is an integer of 2 to 6, R1 is a perfluoropolyether chain, R2 is —OCH2CH(OH)CH2O(CH2)mOH (m in the formula is an integer of 2 to 4)).
Provided are a photosensitive resin composition and a photosensitive coloring composition which exhibit excellent developability and favorable low-temperature curability, and which can be used to form a cured resin film having sufficient hardness and solvent resistance. This photosensitive resin composition contains a resin (A), a reactive diluent (B), a photopolymerization initiator (C), and a solvent (D). The resin (A) is a product of an addition reaction between: a hydroxyl group-containing (meth)acrylic resin (a-0); a compound (a-4) having an isocyanate group and an ethylenically unsaturated group; and a polybasic acid or anhydride thereof (a-5). Component (a-0) is a copolymer that contains a structural unit derived from a hydroxyl group-containing (meth)acrylate (m-1) and a structural unit derived from a (meth)acrylate (m-2) having one or more groups selected from the group consisting of an active methylene group, an active methine group, an epoxy group, an oxetanyl group, a blocked isocyanate group and a silyl group.
A thermosetting resin composition containing (A) a thermosetting resin, (B) an ethylenically unsaturated monomer, (C) an ethylenically unsaturated group-containing phosphoric acid ester compound, (D) a low shrinkage agent, (E) an inorganic filler, and (F) a thermal polymerization initiator.
C08L 101/00 - Compositions contenant des composés macromoléculaires non spécifiés
C08F 283/01 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères prévus par la sous-classe sur des polyesters non saturés
100.
RESIST PATTERN INSPECTION METHOD, RESIST PATTERN MANUFACTURING METHOD, SUBSTRATE SELECTION METHOD, AND MANUFACTURING METHOD FOR SEMICONDUCTOR PACKAGE SUBSTRATE OR PRINTED CIRCUIT BOARD
This resist pattern inspection method comprises an appearance inspection step for inspecting the appearance of a resist pattern on the basis of light emitted from a substrate whereon the resist pattern is formed. This resist pattern manufacturing method comprises: a resist pattern formation step for forming a resist pattern on a substrate; and a light-emitting material adhering step for adhering a light-emitting material to a surface of a conductor of the substrate. This substrate selection method comprises: the appearance inspection step for inspecting the appearance of the resist pattern on the basis of the light emitted from the substrate whereon the resist pattern is formed; and an evaluation step for evaluating the resist pattern on the basis of the appearance inspection in the appearance inspection step. This manufacturing method for a semiconductor package substrate or a printed circuit board comprises a conductor pattern formation step for forming a conductor pattern by etching or plating the substrate, the resist pattern of the substrate having been evaluated in the substrate selection method as meeting a standard.
H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
H05K 3/06 - Elimination du matériau conducteur par voie chimique ou électrolytique, p.ex. par le procédé de photo-décapage
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur