A layered structure for an automobile emblem, includes: a first member containing a first resin material; a second member containing the first resin material and facing the first member; and a filling member containing a second resin material provided between the first member and the second member.
B32B 27/08 - Produits stratifiés composés essentiellement de résine synthétique comme seul composant ou composant principal d'une couche adjacente à une autre couche d'une substance spécifique d'une résine synthétique d'une sorte différente
B32B 25/08 - Produits stratifiés composés essentiellement de caoutchouc naturel ou synthétique comprenant du caoutchouc comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique de résine synthétique
B32B 25/16 - Produits stratifiés composés essentiellement de caoutchouc naturel ou synthétique comprenant des polydiènes ou poly-halodiènes
B32B 27/36 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyesters
B32B 27/38 - Produits stratifiés composés essentiellement de résine synthétique comprenant des résines époxy
B32B 27/40 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyuréthanes
B60R 13/00 - Eléments pour habiller la carrosserie, l'identifier ou la décorer; Aménagements ou adaptations pour la publicité
G01S 7/02 - DÉTERMINATION DE LA DIRECTION PAR RADIO; RADIO-NAVIGATION; DÉTERMINATION DE LA DISTANCE OU DE LA VITESSE EN UTILISANT DES ONDES RADIO; LOCALISATION OU DÉTECTION DE LA PRÉSENCE EN UTILISANT LA RÉFLEXION OU LA RERADIATION D'ONDES RADIO; DISPOSITIONS ANALOGUES UTILISANT D'AUTRES ONDES - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
G01S 13/931 - Radar ou systèmes analogues, spécialement adaptés pour des applications spécifiques pour prévenir les collisions de véhicules terrestres
A welding film includes a phenoxy resin, in which a z average molecular weight of the phenoxy resin is 70,000 or more, and a ratio [Mz/Mn] between the z average molecular weight and a number average molecular weight of the phenoxy resin is 5.0 or more.
A positive electrode mixture layer for a lithium-ion secondary battery suitable for producing a lithium-ion secondary battery with high rate characteristics at an ordinary temperature and low temperatures and low internal resistance (DCR) at low temperatures, characterized by including a positive electrode active material, a binder, and a conductive additive, in which the conductive additive includes carbon black, a carbon nanotube (1) having an average fiber diameter of 80 to 400 nm, and a carbon nanotube (2) having an average fiber diameter of 0.4 to 3.0 nm, the content rates of the carbon black, the carbon nanotube (1), and the carbon nanotube (2) in the conductive additive are 40 to 80% by mass, 10 to 50% by mass, and 1 to 30% by mass, respectively, and the content rate of the conductive additive in the positive electrode mixed layer is 0.1 to 5.0% by mass.
H01M 4/58 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs de structures polyanioniques, p.ex. phosphates, silicates ou borates
H01M 4/62 - Emploi de substances spécifiées inactives comme ingrédients pour les masses actives, p.ex. liants, charges
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
4.
NEGATIVE ELECTRODE MATERIAL FOR LITHIUM-ION SECONDARY BATTERY, METHOD OF EVALUATING SAME, AND METHOD OF PRODUCING SAME, NEGATIVE ELECTRODE FOR LITHIUM-ION SECONDARY BATTERY, AND LITHIUM-ION SECONDARY BATTERY
A negative electrode material for a lithium-ion secondary battery includes graphite particles satisfying the following Formula (1):
A negative electrode material for a lithium-ion secondary battery includes graphite particles satisfying the following Formula (1):
[Springback rate×7.6]+[Compressive load (kN/cm2)]≥4.2 (1).
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
The present disclosure relates to a photosensitive resin film containing a binder polymer, a photopolymerizable compound, a photopolymerization initiator, and a polymerization inhibitor and having a thickness of 35 to 300 μm.
Disclosed is a method for manufacturing an electronic component device, the method including, in the stated order: a step of disposing an IC chip and a chip-type passive component on a temporary fixing material layer of a carrier substrate, the passive component having a main body part and a connection part provided on an outer surface of the main body part, the connection part being interposed between the main body part and the temporary fixing material layer to form a gap between the main body part and the temporary fixing material layer; a step of forming a sealing layer sealing the IC chip and the passive component on the temporary fixing material layer by a sealing material containing a curable resin and a filler; a step of curing the sealing layer to form a sealed structure; and a step of peeling off the carrier substrate from the sealed structure. When a top cut particle diameter of the filler is designated as D and a width of the gap between the main body part and the temporary fixing material layer is designated as G, D/G is 1.5 or less.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des groupes principaux , ou dans une seule sous-classe de , , p.ex. circuit hybrides
A magnetic sensor includes: at least one sensitive element including a soft magnetic material and having a longitudinal direction and a transverse direction and a uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction, the at least one sensitive element being configured to sense a magnetic field by a magnetic impedance effect; at least one protruding portion including a soft magnetic material and protruding in the longitudinal direction from a longitudinal end of the at least one sensitive element; and a guiding member disposed opposite the at least one protruding portion and made of a soft magnetic material, the guiding member being configured to guide magnetic field lines toward the at least one protruding portion.
G01R 33/06 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
8.
LITHIUM-ION SECONDARY-BATTERY NEGATIVE ELECTRODE MATERIAL AND METHOD FOR MANUFACTURING SAME, LITHIUM-ION SECONDARY-BATTERY NEGATIVE ELECTRODE, AND LITHIUM ION SECONDARY BATTERY
A lithium-ion secondary-battery negative electrode material, consisting of graphite particles satisfying the following (1) to (3): (1) having a specific surface area of 2.7 m2/g or less; (2) having a compression pressure of 2.8 kN/cm2 or more; and (3) having a value, representing elastic energy/plastic deformation energy, or 4 or more.
H01M 4/133 - PROCÉDÉS OU MOYENS POUR LA CONVERSION DIRECTE DE L'ÉNERGIE CHIMIQUE EN ÉNERGIE ÉLECTRIQUE, p.ex. BATTERIES Électrodes Électrodes composées d'un ou comprenant un matériau actif Électrodes pour accumulateurs à électrolyte non aqueux, p.ex. pour accumulateurs au lithium; Leurs procédés de fabrication Électrodes à base de matériau carboné, p.ex. composés d'intercalation du graphite ou CFx
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
9.
OPTICAL CELL FOR SEDIMENTATION ANALYSIS, CENTRIFUGAL SEDIMENTATION ANALYSIS DEVICE, AND CENTRIFUGAL SEDIMENTATION ANALYSIS METHOD
This optical cell for sedimentation analysis has a pair of opposing surfaces through which light is transmitted, and two polarizing plates, in which each of the two polarizing plates is disposed in a crossed Nicols state on each of the inner surfaces of the pair of opposing surfaces.
A method for forming a pattern of metal oxide capable of selectively etching an etching object containing metal oxide relative to a non-etching object and forming a pattern of the metal oxide along a pattern of the non-etching object serving as a template. Metal oxide containing oxide of at least one of tin and indium is etched using an etching gas to form the pattern of the metal oxide. An etching gas containing halon is brought into contact with a member to be etched in the presence of plasma, and etching is performed while a bias power is applied to a lower electrode (2) supporting the member to be etched to selectively etch a metal oxide layer (22) relative to a silicon substrate (24), a template layer (21), and an underlying layer (23), and the predetermined pattern of the template layer (21) is transferred to the metal oxide layer (22).
H01L 21/3213 - Gravure physique ou chimique des couches, p.ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
A method for forming solder bumps by using a solder paste containing solder particles, a flux, and a volatile dispersion medium, the method including: applying the solder paste on a member having a plurality of electrodes on the surface; heating the member and the solder paste at a temperature below the melting point of solder constituting the solder particles to form a solder particle-containing layer; heating the member and the solder particle-containing layer at a temperature equal to or higher than the melting point of the solder constituting the solder particles to form solder bumps; and removing, by cleaning, a residue of the solder particle-containing layer remaining between adjacent solder bumps, in which the solder particles have an average particle size of 10 μm or less, and the content of the dispersion medium in the solder paste is 30% by mass or more.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
12.
NEGATIVE ELECTRODE MATERIAL FOR LITHIUM-ION SECONDARY BATTERY, NEGATIVE ELECTRODE MATERIAL COMPOSITION FOR LITHIUM-ION SECONDARY BATTERY, NEGATIVE ELECTRODE FOR LITHIUM-ION SECONDARY BATTERY, AND LITHIUM-ION SECONDARY BATTERY
A negative electrode material for a lithium-ion secondary battery comprising graphite particles satisfying x≥2.0 when a compressive load required to consolidate to 1.7 g/cm3 in autograph measurement is x (kN/cm2), 5.0≤y≤20.0 when, a particle size at which a cumulative volume from a small diameter side of a volume-based particle size distribution measured by a laser diffraction method reaches 50% is y, the above mentioned x and y satisfy the following Formula (1), and a degree of graphitization satisfies 90.0% or more:
A negative electrode material for a lithium-ion secondary battery comprising graphite particles satisfying x≥2.0 when a compressive load required to consolidate to 1.7 g/cm3 in autograph measurement is x (kN/cm2), 5.0≤y≤20.0 when, a particle size at which a cumulative volume from a small diameter side of a volume-based particle size distribution measured by a laser diffraction method reaches 50% is y, the above mentioned x and y satisfy the following Formula (1), and a degree of graphitization satisfies 90.0% or more:
11.3x−0.66y+1.4≥14.5 (1).
H01M 4/583 - Matériau carboné, p.ex. composés au graphite d'intercalation ou CFx
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
13.
FLUORINE-CONTAINING ETHER COMPOUND, LUBRICANT FOR MAGNETIC RECORDING MEDIUM, AND MAGNETIC RECORDING MEDIUM
The present invention provides a fluorine-containing ether compound represented by the following Formula. R1-[B]-[A]-CH2—R2—CH2-[C]-[D]-R3 (R2 is a perfluoropolyether chain; [A] is Formula (2-1); [B] is Formula (2-2); [C] is Formula (3-1); [D] is Formula (3-2); R3 is Formula (4); and R1 is a terminal group.)
The present invention provides a fluorine-containing ether compound represented by the following Formula. R1-[B]-[A]-CH2—R2—CH2-[C]-[D]-R3 (R2 is a perfluoropolyether chain; [A] is Formula (2-1); [B] is Formula (2-2); [C] is Formula (3-1); [D] is Formula (3-2); R3 is Formula (4); and R1 is a terminal group.)
A heat conducting composition containing a curable silicone resin (A) and 70 to 98% of a thermally conductive powder (B) containing 30 to 75% of aluminum nitride particles (B-1) having a 50% particle size of 50 to 150 μm, 10 to 30% by mass of aluminum nitride particles (B-2) having a 50% particle size of 15 to less than 50 μm, 5 to 15% of a metal oxide (B-3) other than zinc oxide having a 50% particle size of 1 to less than 20 μm, and 10 to 40% of zinc oxide (B-4) having a 50% particle size of 0.1 to less than 1 μm and a BET specific surface area of less than 9.0 m2/g. The metal oxide (B-3) and the zinc oxide (B-4) are both surface treated with a surface treatment agent selected from a silane coupling agent having an C10-C22 alkyl group and α-butyl-ω-(2-trimethoxysilylethyl)polydimethylsiloxane.
A thermosetting resin composition containing a maleimide compound (a) having at least one N-substituted maleimide group, and a compound (b) represented by the following general formula (1) exhibiting no reactivity with the maleimide group of the component (a) (Xb1 represents a single bond or a substituted or unsubstituted aliphatic hydrocarbon group having 1 to 5 carbon atoms; Rb1 and Rb2 each independently represent a substituted or unsubstituted aliphatic hydrocarbon group having 1 to 10 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 18 ring carbon atoms, a substituted or unsubstituted heterocyclic aromatic hydrocarbon group having 5 to 20 ring atoms, an oxygen atom-containing group, or a group containing a combination of these groups; and m and n each independently represent an integer of 0 to 5).
A thermosetting resin composition containing a maleimide compound (a) having at least one N-substituted maleimide group, and a compound (b) represented by the following general formula (1) exhibiting no reactivity with the maleimide group of the component (a) (Xb1 represents a single bond or a substituted or unsubstituted aliphatic hydrocarbon group having 1 to 5 carbon atoms; Rb1 and Rb2 each independently represent a substituted or unsubstituted aliphatic hydrocarbon group having 1 to 10 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 18 ring carbon atoms, a substituted or unsubstituted heterocyclic aromatic hydrocarbon group having 5 to 20 ring atoms, an oxygen atom-containing group, or a group containing a combination of these groups; and m and n each independently represent an integer of 0 to 5).
C08J 5/24 - Imprégnation de matériaux avec des prépolymères pouvant être polymérisés en place, p.ex. fabrication des "prepregs"
C08F 283/04 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères prévus par la sous-classe sur des polycarbonamides, des polyesteramides ou des polyimides
A SiC epitaxial wafer according to the present embodiment includes: a SiC substrate; and a SiC epitaxial layer laminated on the SiC substrate, in which a carrier concentration uniformity of the SiC epitaxial layer is less than 3.8%, and the carrier concentration uniformity is a value obtained by dividing, by an average value, a difference between a maximum value and a minimum value of carrier concentrations of the SiC epitaxial layer measured along a straight line passing through a center of the SiC epitaxial layer when seen in a plan view.
A heating element configuration that can maintain heat dissipation performance when a configuration of a thermally conductive member is changed is proposed. A proposal device includes a reference performance calculation unit that calculates heat dissipation performance based on a reference model representing a configuration of a semiconductor device with a multi-layered thermally conductive member includes a heating element; a comparative performance calculation unit that calculates heat dissipation performance based on a comparative model in which a configuration of the thermally conductive member of the reference model is changed; a proposed configuration generation unit that generates a proposed model in which a configuration of the heating element of the comparative model is changed such that the heat dissipation performance based on the comparative model is equivalent to the heat dissipation performance based on the reference model; and a result output unit that outputs information based on the proposed model.
A resin molded product includes a main body including a design face and a opposite face opposite to the design face and having a first foamed layer formed inside the main body, and a protruding portion located at a periphery of the main body, having a second foamed layer formed inside the protruding portion, and protruding to a thickness direction of the main body and a side opposite to the design face, the protruding portion includes a tip end portion disposed so that a protruding tip portion on the design face extends to a protruding direction of the protruding portion more than a protruding tip portion on the opposite face, and a thickness of the tip end portion is 1.2 mm or less.
B32B 5/18 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches contient un matériau sous forme de mousse ou essentiellement poreux
B32B 1/00 - Produits stratifiés ayant essentiellement une forme générale autre que plane
B32B 3/04 - Caractérisés par des caractéristiques de forme en des endroits déterminés, p.ex. au voisinage des bords caractérisés par une couche pliée au bord, p.ex. par-dessus une autre couche
B32B 7/02 - Propriétés physiques, chimiques ou physicochimiques
19.
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, CURABLE RESIN COMPOSITION FOR TEMPORARY FIXATION MATERIAL, FILM FOR TEMPORARY FIXATION MATERIAL, AND LAMINATED FILM FOR TEMPORARY FIXATION MATERIAL
Disclosed is a semiconductor device manufacturing method, including a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.
C09J 4/06 - Adhésifs à base de composés non macromoléculaires organiques ayant au moins une liaison non saturée carbone-carbone polymérisable en combinaison avec un composé macromoléculaire autre qu'un polymère non saturé des groupes
B32B 7/12 - Liaison entre couches utilisant des adhésifs interposés ou des matériaux interposés ayant des propriétés adhésives
B32B 17/06 - Produits stratifiés composés essentiellement d'une feuille de verre ou de fibres de verre, de scorie ou d'une substance similaire comprenant du verre comme seul composant ou comme composant principal d'une couche adjacente à une autre couche d'une substance spécifique
B32B 37/12 - Procédés ou dispositifs pour la stratification, p.ex. par polymérisation ou par liaison à l'aide d'ultrasons caractérisés par l'usage d'adhésifs
B32B 43/00 - Opérations spécialement adaptées aux produits stratifiés et non prévues ailleurs, p.ex. réparation; Appareils pour ces opérations
C09J 7/30 - Adhésifs sous forme de films ou de pellicules caractérisés par la composition de l’adhésif
C09J 11/04 - Additifs non macromoléculaires inorganiques
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
A SiC epitaxial wafer including: a SiC substrate; and a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein a diameter of the SiC substrate is 195 mm or more, and a warp is 50 μm or less.
A method for manufacturing a semiconductor device is disclosed. The method for manufacturing a semiconductor device includes preparing a base material, preparing a plurality of semiconductor elements each having a connection terminal, preparing a wiring board provided with a first wiring, arranging the plurality of semiconductor elements on the base material, covering the plurality of semiconductor elements on the base material with an insulating material, arranging the wiring board on at least one of the plurality of semiconductor elements so that the first wiring is connected to at least some of the connection terminals of the plurality of semiconductor elements covered with the insulating material, and forming a second wiring around the first wiring. The first wiring has finer wiring than the second wiring.
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
22.
LITHIUM ION CONDUCTIVE SOLID ELECTROLYTE AND ALL-SOLID-STATE BATTERY
Provided is a novel solid electrolyte having excellent lithium ion conductivity.
Provided is a novel solid electrolyte having excellent lithium ion conductivity.
The lithium ion conductive solid electrolyte of the present invention includes a chalcogenide having a monoclinic crystal structure, wherein
the monoclinic crystal has an a-axis length of 9.690 to 9.711 Å, a b-axis length of 11.520 to 11.531 Å, a c-axis length of 10.680 to 10.695 Å, and an axis angle β in the range of 90.01 to 90.08°. The all-solid-state battery of the present invention includes a positive electrode having a positive electrode active material, a negative electrode having a negative electrode active material, and a solid electrolyte layer between the positive electrode and the negative electrode, wherein the solid electrolyte layer includes the lithium ion conductive solid electrolyte.
H01M 4/505 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de manganèse d'oxydes ou d'hydroxydes mixtes contenant du manganèse pour insérer ou intercaler des métaux légers, p.ex. LiMn2O4 ou LiMn2OxFy
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p.ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p.ex. batteries à insertion ou intercalation de lithium dans les deux électrodes; Batteries à l'ion lithium
A recording and reproducing device of the present invention includes, a case; at least one recording medium having a disk-shape, a motor configured to rotate the at least one recording medium, a head configured to read or write information from or to the at least one recording medium, and an actuator configured to drive the head to scan in a radial direction of the at least one recording medium which are provided in the case; and a regulating portion configured to, when an external shock is applied to the at least one recording medium, contact an outer peripheral edge of the at least one recording medium to regulate displacements of the at least one recording medium due to bending of the at least one recording medium, wherein the regulating portion includes a regulating member which is rotatable about an axis parallel to a rotation axis of the at least one recording medium.
A recording and reproducing device includes, a case; at least one recording medium having a disk-shape, a motor configured to rotate the at least one recording medium, a head configured to read or write information from or to the at least one recording medium, and an actuator configured to drive the head to scan in a radial direction of the at least one recording medium which are provided in the case; and a regulating portion configured to, when an external shock is applied to the at least one recording medium, contact an outer peripheral edge of the at least one recording medium to regulate displacements of the at least one recording medium due to bending of the at least one recording medium, wherein the regulating portion has a regulating member displaced between a position away from the outer peripheral edge of the at least one recording medium and a contact-possible position or a contacting position.
A conductive member includes an adhesive layer and a metal foil layer. The adhesive layer consists of an adhesive composition containing conductive particles. The metal foil layer is disposed on the adhesive layer. The conductive member can be used to form, for example, a predetermined metal film.
H01L 23/552 - Protection contre les radiations, p.ex. la lumière
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
A recording and reproducing device of the present invention includes, a case; at least one recording medium having a disk-shape, a motor configured to rotate the at least one recording medium, a head configured to read or write information from or to the at least one recording medium, and an actuator configured to drive the head to scan in a radial direction of the at least one recording medium which are provided in the case; and a regulating portion configured to, when an external shock is applied to the at least one recording medium, contact an outer peripheral edge of the at least one recording medium to regulate displacements of the at least one recording medium due to bending of the at least one recording medium, wherein the regulating portion includes a regulating member which is movable in an axial direction parallel to a rotation axis of the at least one recording medium.
To provide a means removing chlorine gas, which can remove chlorine gas contained in, for example, exhaust gas with high efficiency and does not require frequent exchange. A chlorine gas decomposition catalyst including a metal oxide (X), wherein the metal oxide (X) includes an oxide (X1) of at least one element selected from the group consisting of Ce and Co.
METHOD FOR MEASURING ORIENTATION OF SILVER NANOWIRE, POLYVINYL ALCOHOL FILM, METHOD FOR PROCESSING POLYVINYL ALCOHOL FILM, AND METHOD FOR PRODUCING POLYVINYL ALCOHOL FILM
The present method for evaluating an orientation of silver nanowires is a method for measuring an orientation of silver nanowires included in a polyvinyl alcohol film, the method including measuring, using linearly polarized near-infrared light, a first transmittance T1 for polarized light perpendicular to an orientation direction of silver nanowires and a second transmittance T0 for polarized light parallel to the orientation direction of the silver nanowires in a polyvinyl alcohol film including the silver nanowires, and determining an orientation to be high in a case where a ratio (T1/T0) of the first transmittance T1 to the second transmittance T0 is greater than 1, and determining the orientation to be low in a case where the ratio is close to 1.
G01N 21/84 - Systèmes spécialement adaptés à des applications particulières
B29C 55/06 - Façonnage par étirage, p.ex. étirage à travers une matrice; Appareils à cet effet de plaques ou de feuilles suivant un seul axe, p.ex. étirage oblique parallèle à la direction d'alimentation
Provided is a transparent conducting film laminate suitable for three-dimensional molding having a curved surface. A transparent conducting film laminate comprising: a transparent substrate made of a transparent thermoplastic resin film, a transparent conducting film formed on at least one main face of the transparent substrate, and containing a binder resin and a metal nanowire, and a protection film formed on the transparent conducting film, and containing a resin component, wherein the binder resin contains at least on kind of poly-N-vinylacetamide, a copolymer containing 70 mol % or more of N-vinylacetamide (NVA) as a monomer unit, and a cellulose-based resin, and 94% by mass or more of the resin component constituting the protection film is derived from a thermoplastic resin.
Provided is a method for producing a surface-treated thermally conductive filler, the method including treating the surface of the thermally conductive filler with an alkoxysilane having a specific structure by the chemical vapor deposition method.
A molded body, comprising a foamed portion in which a skin layer A, a foamed layer and a skin layer B are disposed in this order in a thickness direction, wherein in the foamed portion, the foamed layer has a ratio of thickness, with respect to a total thickness of the skin layer A, the foamed layer and the skin layer B, of from 73% to 88%.
B32B 5/14 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par une couche différant en certains endroits du fait de sa constitution ou de sa structure physique, p.ex. plus dense superficiellement
B32B 5/18 - Produits stratifiés caractérisés par l'hétérogénéité ou la structure physique d'une des couches caractérisés par le fait qu'une des couches contient un matériau sous forme de mousse ou essentiellement poreux
B29C 44/08 - Moulage par pression interne engendrée dans la matière, p.ex. par gonflage ou par moussage pour la fabrication d'objets de longueur définie, c.à d. d'objets séparés en plusieurs étapes d'expansion
B32B 27/32 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyoléfines
32.
THERMALLY CONDUCTIVE URETHANE RESIN COMPOSITION AND CURED PRODUCT
A thermally conductive urethane resin composition comprising a castor oil-based polyol, a polyisocyanate compound, and a filler, wherein
an equivalent ratio [NCO/OH] of isocyanato groups of the polyisocyanate compound to hydroxyl groups of the castor oil-based polyol is from 0.8 to 1.6,
the filler comprises a filler (A) having an average particle diameter of 0.03 to 10 μm, and
the filler (A) has been surface-treated with a specific surface treatment agent.
C08G 18/10 - Procédés mettant en œuvre un prépolymère impliquant la réaction d'isocyanates ou d'isothiocyanates avec des composés contenant des hydrogènes actifs, dans une première étape réactionnelle
C08K 9/02 - Ingrédients traités par des substances inorganiques
C08K 9/08 - Ingrédients agglomérés par traitement avec un liant
A negative electrode for an all-solid-state battery, the negative electrode comprising a negative-electrode active material and a solid electrolyte,
the negative-electrode active material comprising a carbon material that has an interplanar spacing (d002) of from 0.336 nm to less than 0.350 nm and a spring-back ratio of 13% or more.
A method for manufacturing a wiring board including: providing a laminate including an insulating material layer and a copper layer provided on a surface of the insulating material layer, and in which the copper layer is an electroless copper plating layer; forming a resist pattern including a groove reaching a surface of the copper layer on the surface of the copper layer; and filling the groove with a conductive material containing copper by electrolytic copper plating. The thickness of the electroless copper plating layer is, for example, 20 nm to 200 nm.
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
H05K 3/10 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché
H05K 3/02 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué à la surface du support isolant et est ensuite enlevé de zones déterminées de la surface, non destinées à servir de conducteurs de courant ou d'éléments de blindage
35.
POLISHING LIQUID, POLISHING LIQUID SET AND POLISHING METHOD
A polishing liquid containing abrasive grains including a hydroxide of a tetravalent metal element, a polymer including a structure unit represented by Formula (1) below, and a liquid medium.
A polishing liquid containing abrasive grains including a hydroxide of a tetravalent metal element, a polymer including a structure unit represented by Formula (1) below, and a liquid medium.
A polishing liquid containing abrasive grains including a hydroxide of a tetravalent metal element, a polymer including a structure unit represented by Formula (1) below, and a liquid medium.
[in Formula (1), * represents a bonding hand.]
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
The present invention relates to a polychloroprene latex composition, a dip-molded product, a pressure-sensitive adhesive, an adhesive, and an adhesive product. The polychloroprene latex composition contains a chloroprene (co)polymer (A) and an aromatic compound (B) having 7 to 10 carbon atoms, and the polychloroprene latex composition has a proportion of the aromatic compound (B) having 7 to 10 carbon atoms of 0.0012 to 0.15 parts by mass based on 100 parts by mass of solid content of the polychloroprene latex composition.
Provided is a method for easily manufacturing a metal-polyolefin bonded body having high bonding strength. This method for manufacturing a metallic member-resin member bonded body comprises: preparing a film that includes at least one modified polyolefin layer selected from the group consisting of a layer containing a reaction product 1 of a maleic anhydride-modified polyolefin, a bifunctional epoxy resin, and a bifunctional phenol compound, a layer containing a reaction product 2 of a maleic anhydride-modified polyolefin and a thermoplastic epoxy resin, and a layer containing a mixture of a polyolefin and a thermoplastic epoxy resin; disposing the film on at least a part of the surface of a metallic substrate so as to expose the modified polyolefin layer, thereby forming a metallic member in which a resin coating layer is laminated on the metallic substrate; and bonding a resin member onto the resin coating layer of the metallic member.
A thermally conductive composition comprising: a filler; and a polymer component, wherein the filler comprises at least one surface-treated filler selected from the group consisting of the following filler (A) and filler (B):
Filler (A): A filler surface-treated by a chemical vapor deposition method using a siloxane having one SiH group
Filler (B): A filler surface-treated by a chemical vapor deposition method using a siloxane having two or more SiH groups, wherein at least one group selected from the group consisting of an unsubstituted alkyl group having 6 to 20 carbon atoms, an alkyl group having 2 to 20 carbon atoms having a substituent, and a group having a specific structure is further bonded to a silicon atom on a surface of the filler and introduced.
C09K 5/14 - Substances solides, p.ex. pulvérulentes ou granuleuses
C09C 3/00 - Traitement, en général, de substances inorganiques, autres que des charges fibreuses, pour améliorer leurs propriétés de pigmentation ou de charge
C09C 3/12 - Traitement par des composés organiques du silicium
C09C 3/08 - Traitement par des composés organiques de bas poids moléculaire
A thermally conductive resin composition includes an epoxy resin and a thermally conductive powder. The thermally conductive powder includes aluminum nitride having a silicon-containing oxide coating on a surface thereof and another thermally conductive powder. The content of the epoxy resin is 1% by mass or more and 20% by mass or less based on the total amount of the thermally conductive resin composition. The content of the thermally conductive powder is 80% by mass or more and 99% by mass or less based on the total amount of the thermally conductive resin composition. The content of the aluminum nitride having a silicon-containing oxide coating on a surface thereof is 10% by mass or more and 70% by mass or less based on the total amount of the thermally conductive resin composition. The content of the other thermally conductive powder is 10% by mass or more and 89% by mass or less based on the total amount of the thermally conductive resin composition.
C08G 59/68 - Macromolécules obtenues par polymérisation à partir de composés contenant plusieurs groupes époxyde par molécule en utilisant des agents de durcissement ou des catalyseurs qui réagissent avec les groupes époxyde caractérisées par les catalyseurs utilisés
C08K 9/02 - Ingrédients traités par des substances inorganiques
Disclosed is a film-shaped adhesive. An embodiment of the film-shaped adhesive contains metal particles and has a shear viscosity at 110° C. of 30000 Pa·s or less. Another embodiment of the film-shaped adhesive contains metal particles and has a loss modulus at 110° C. of 200 kPa or less. Another embodiment of the film-shaped adhesive contains metal particles, a thermosetting resin, a curing agent, and an elastomer, in which a content of the metal particles based on the total amount of the metal particles, thermosetting resin, curing agent, and elastomer is 70.0% by mass or more, and a total content of the thermosetting resin and the curing agent is 13.0% by mass or more.
H01L 21/82 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
A heat conducting composition including:
a polymer component (A);
a surface-treated filler (B) obtained by surface-treating a filler with α-butyl-ω-(2-trimethoxysilylethyl)polydimethylsiloxane having a weight average molecular weight of 500 to 5,000, with the α-butyl-ω-(2-trimethoxysilylethyl)polydimethylsiloxane having an adhesion percentage to the filler of from 20.0 to 50.0% by mass; and
a silicon-containing oxide-coated nitride (C) having a nitride and a silicon-containing oxide coating that coats the nitride.
A fluorine-containing ether compound represented by the following formula is provided. R1—CH2—R2—CH2—R3—CH2—R4—CH2—R5
A fluorine-containing ether compound represented by the following formula is provided. R1—CH2—R2—CH2—R3—CH2—R4—CH2—R5
(In the formula, R3 is a divalent organic group containing at least one polar group and an alicyclic structure having 3 to 13 carbons, and does not contain a perfluoropolyether chain, R2 and R4 are perfluoropolyether chains, and R1 and R5 are terminal groups containing two or three polar groups, in which individual polar groups are bound to different carbon atoms and the carbon atoms to which the polar groups are bound are bound to each other via a linking group containing a carbon atom to which the polar groups are not bound.)
An information processing system according to an embodiment includes at least one processor. The at least one processor is configured to acquire a numerical representation and a combination ratio for each of a plurality of component objects, execute machine learning based on a plurality of the numerical representations to calculate a plurality of regression parameters corresponding to the plurality of component objects, and apply a plurality of the combination ratios to a regression model defined by the plurality of regression parameters to calculate a predicted value indicating characteristics of a composite object obtained by combining plurality of component objects.
A method for manufacturing a semiconductor device, the method including: a step of disposing an adhesive thermal insulation material on a semiconductor device; a step of performing reflow of the semiconductor device having the thermal insulation material disposed thereon; and a step of detaching the thermal insulation material from the semiconductor device.
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A composition containing first hollow particles being thermally expandable hollow particles; second hollow particles being hollow particles other than the first hollow particles; and a polymerizable compound.
C08F 265/08 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères d'acides monocarboxyliques non saturés ou de leurs dérivés tels que définis dans le groupe sur des polymères de nitriles
A composition containing a compound represented by the following Formula (1):
A composition containing a compound represented by the following Formula (1):
A composition containing a compound represented by the following Formula (1):
[in the Formula (1), R11 and R12 each independently represent a hydrogen atom or a methyl group; and R13 represents a divalent group having a polyoxyalkylene chain.]; and hollow particles.
C08F 299/02 - Composés macromoléculaires obtenus par des interréactions de polymères impliquant uniquement des réactions entre des liaisons non saturées carbone-carbone, en l'absence de monomères non macromoléculaires à partir de polycondensats non saturés
47.
LAYERED PLATE AND WIRING BASE BOARD PRODUCTION METHOD
A layered plate including a copper layer having a thickness of 5 μm or less, and a resin layer provided on a surface of the copper layer, in which a water absorption rate of the resin layer is 1% or less after being left in an environment of 130° C. in temperature and 85% in relative humidity for 200 hours.
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H05K 3/02 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué à la surface du support isolant et est ensuite enlevé de zones déterminées de la surface, non destinées à servir de conducteurs de courant ou d'éléments de blindage
The present invention provides a fullerene production device that enables improving fullerene yields. The fullerene production device includes: a reacting furnace (2) in which fullerenes are generated through incomplete combustion of a raw material gas containing a hydrocarbon; a first injection unit (23c) configured to incompletely combust the raw material gas while injecting the raw material gas into the reacting furnace (2) to form a first combustion flame; and a second injection unit (25a) configured to combust an auxiliary gas containing a hydrocarbon that is the same as or different from that in the raw material gas while injecting the auxiliary gas into the reacting furnace (2) to form a second combustion flame.
A fluorine-containing ether compound represented by the following formula (1) is provided.
A fluorine-containing ether compound represented by the following formula (1) is provided.
R2—CH2—R1—CH2OCH2CH(OH)—(CH2)n—CH(OH)CH2OCH2—R1—CH2—R2 (1)
A fluorine-containing ether compound represented by the following formula (1) is provided.
R2—CH2—R1—CH2OCH2CH(OH)—(CH2)n—CH(OH)CH2OCH2—R1—CH2—R2 (1)
(in the formula (1), n is an integer of 2 to 6, R1 is a perfluoropolyether chain, R2 is —OCH2CH(OH)CH2O(CH2)mOH (m in the formula is an integer of 2 to 4)).
There is provided a plasma etching method capable of selectively etching an etching object containing oxide of at least one of tin and indium compared to a non-etching object. The plasma etching method includes: an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule thereof into contact with a member to be etched including an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas in the presence of plasma, performing etching while applying a bias power exceeding 0 W to a lower electrode supporting the member to be etched, and selectively etching the etching object compared to the non-etching object. The etching object contains oxide of at least one of tin and indium and the non-etching object contains at least one of a silicon-containing compound and a photoresist.
H01L 21/3213 - Gravure physique ou chimique des couches, p.ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
G03F 7/36 - Dépouillement selon l'image non couvert par les groupes , p.ex. utilisant un courant gazeux, un plasma
C09K 13/00 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage
51.
RESIN COMPOSITION FOR MOLDING AND ELECTRONIC COMPONENT DEVICE
A resin composition for molding and an electronic component device are provided. The resin composition for molding includes: a curable resin; and an inorganic filler including a calcium titanate particle.
C08G 59/68 - Macromolécules obtenues par polymérisation à partir de composés contenant plusieurs groupes époxyde par molécule en utilisant des agents de durcissement ou des catalyseurs qui réagissent avec les groupes époxyde caractérisées par les catalyseurs utilisés
C09K 3/10 - Substances non couvertes ailleurs pour sceller ou étouper des joints ou des couvercles
52.
SURFACE-TREATED FILLER, METHOD FOR PRODUCING SURFACE-TREATED FILLER, AND HEAT CONDUCTING COMPOSITION
A surface-treated filler obtained by surface-treating a surface of a filler with α-butyl-ω-(2-trimethoxysilylethyl)polydimethylsiloxane having a weight average molecular weight of 500 to 5,000, wherein an adhesion percentage of the α-butyl-ω-(2-trimethoxysilylethyl)polydimethylsiloxane to the filler is from 20.0 to 50.0% by mass.
A method for manufacturing a semiconductor device includes preparing a plurality of semiconductor elements each including a first surface on which a connection terminal is formed and a second surface on a side opposite to the first surface, preparing a support member in which a curable bonding adhesive layer is formed on a carrier, attaching the plurality of semiconductor elements to the support member such that the second surface of each of the plurality of semiconductor elements is directed toward the curable bonding adhesive layer, fixing the plurality of semiconductor elements to the support member by curing the curable bonding adhesive layer, encapsulating the plurality of semiconductor elements with an encapsulant material, and removing the carrier.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
54.
DESIGN ASSITANCE DEVICE, DESIGN ASSITANCE METHOD, AND DESIGN ASSITANCE PROGRAM
A design assistance device, includes: a data acquisition unit acquiring performance data including a design parameter group and an observation value of a characteristic item; a model construction unit constructing a prediction model for predicting the observation value as a probability distribution, on the basis of the design parameter group; an acquisition function construction unit constructing an acquisition function for each of the characteristic items; a design parameter group candidate generation unit generating a plurality of design parameter group candidates by multi-objective optimization of a plurality of acquisition functions; and a selection unit calculating a total achievement probability with respect to target values of all of the characteristic items, on the basis of the probability distribution of the observation value obtained by inputting the design parameter group candidate to the prediction model, to select at least one design parameter group candidate with the highest total achievement probability.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p.ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
55.
DESIGN ASSISTANCE DEVICE, DESIGN ASSISTANCE METHOD, AND DESIGN ASSISTANCE PROGRAM
A design assistance device, includes: a data acquisition unit acquiring performance data including a design parameter group and an observation value of a characteristic item; a model construction unit constructing a prediction model for predicting the observation value as a probability distribution, on the basis of the design parameter group; an acquisition function construction unit constructing a single target-oriented acquisition function having the design parameter group as input and an index value relevant to improvement of characteristics of all of the characteristic items as output, the single target-oriented acquisition function including a target achievement probability term including a total achievement probability calculated on the basis of each of the prediction models, in which target values of all of the characteristic items are achieved; and a design parameter group acquisition unit acquiring at least one design parameter group by optimization of the target-oriented acquisition function.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p.ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
Provided are a maleimide resin composition containing (A) one or more selected from the group consisting of a maleimide compound having two or more N-substituted maleimide groups and a derivative thereof, (B) a modified conjugated diene polymer, and (C) a thermoplastic elastomer other than the above component (B), wherein the component (B) is one resulting from modification of (b1) a conjugated diene polymer having a vinyl group in the side chain with (b2) a maleimide compound having two or more N-substituted maleimide groups; and a prepreg, a resin film, a laminated board, a printed wiring board and a semiconductor package, each using the maleimide resin composition.
C08L 39/04 - Homopolymères ou copolymères de monomères contenant des hétérocycles possédant de l'azote dans le cycle
H05K 3/12 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de l'impression pour appliquer le matériau conducteur
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
H01L 23/498 - Connexions électriques sur des substrats isolants
57.
METHOD FOR MANUFACTURING WIRING BOARD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RESIN SHEET
A method for manufacturing a wiring board includes preparing a structure body in which a resin sheet having a glass cloth arranged in an organic resin is attached onto a support body having a metal layer provided on a surface thereof or onto a built-in wiring layer provided on the support body, forming a recess by excimer laser in a first resin layer region in which the glass cloth does not exist on a surface side of the resin sheet, forming an opening portion reaching the metal layer on the support body from the surface of the resin sheet, and forming a wiring layer in the recess and the opening portion.
H01L 21/48 - Fabrication ou traitement de parties, p.ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes
H01L 23/498 - Connexions électriques sur des substrats isolants
58.
INSPECTION CONDITION PRESENTATION APPARATUS, SURFACE INSPECTION APPARATUS, INSPECTION CONDITION PRESENTATION METHOD AND PROGRAM
To present an inspection condition for efficiently detecting a scatterer present on a surface of an inspection target depending on type. An inspection condition presentation apparatus includes an intensity calculation part configured to calculate an intensity distribution of scattered light when inspection light is irradiated on a surface of an inspection target on which scatterers of different types are present according to a plurality of incidence condition candidates, and an incidence condition presentation part configured to present, to a user, an incidence condition candidate with which an intensity of the scattered light becomes a maximum.
A molding resin composition includes: an epoxy resin; a curing agent; and an inorganic filler containing at least one selected from the group consisting of calcium titanate particles and strontium titanate particles, in which a total content of the calcium titanate particles and the strontium titanate particles is 60% by volume to 80% by volume with respect to a total amount of the inorganic filler.
Provided is a method for storing a fluorobutene by which polymerization is unlikely to proceed during storage. A fluorobutene represented by general formula C4HxFy where x is 0 or more and 7 or less, y is 1 or more and 8 or less, and x+y is 8 contains or does not contain at least one of sodium, potassium, magnesium, and calcium as a metal impurity. The fluorobutene is stored in a container in which the total concentration of sodium, potassium, magnesium, and calcium is 1,000 ppb by mass or less when containing at least one of sodium, potassium, magnesium, and calcium.
A resin composition that contains (A) at least one of a polyimide precursor, which is at least one resin selected from the group consisting of a polyamide acid, a polyamide acid ester, a polyamide acid salt, and a polyamide acid amide, or a polyimide resin, and (B) a solvent, and that is used for preparing an insulating film for at least one of a first organic insulating film or a second organic insulating film in a method for producing a semiconductor device including processes (1) to (5).
C08G 73/10 - Polyimides; Polyester-imides; Polyamide-imides; Polyamide-acides ou précurseurs similaires de polyimides
62.
CURABLE RESIN FILM, FILM MATERIAL FOR SEMICONDUCTOR DEVICE PRODUCTION, CURABLE RESIN COMPOSITION FOR SEMICONDUCTOR DEVICE PRODUCTION, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
A method for producing a semiconductor device, including forming a temporary fixing laminated body including a carrier, and a sealing structure body provided on a main surface of the carrier, and removing the carrier from the temporary fixing laminated body. The temporary fixing laminated body is formed by a method including adhering the curable resin film and the carrier. The carrier is removed from the temporary fixing laminated body by separating a protective layer that is the curable resin film that is cured from the carrier. The curable resin film exhibits a transmittance of 20% or less with respect to light at a wavelength of 355 nm when cured.
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/29 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par le matériau
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 23/31 - Capsulations, p.ex. couches de capsulation, revêtements caractérisées par leur disposition
63.
BUMPER REINFORCEMENT, METHOD FOR MANUFACTURING SAME, AND RESIN REINFORCEMENT MEMBER FOR BUMPER REINFORCEMENT
Provided are: a lightweight bumper reinforcement which, with respect to the load during a collision, exhibits high rigidity against a light load and, against a heavy load, is capable of plastic deformation to absorb collision energy while effectively transferring unabsorbed energy to a crash box; a method for manufacturing the same; and a resin reinforcement member for a bumper reinforcement. The bumper reinforcement of the present disclosure comprises a body portion extending along a vehicle width direction, and a resin reinforcement portion extending along the vehicle width direction and disposed on the vehicle body side relative to the body portion. The body portion has at least one first joint portion on the vehicle body side. The resin reinforcement portion has at least one second joint portion joined to the first joint portion, and one or more reinforcement ribs projecting on the vehicle body side and extending along the vehicle width direction.
A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron is less than 1.0×1014 cm−3 at any position in the plane of the epitaxial layer.
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/36 - Corps semi-conducteurs caractérisés par la concentration ou la distribution des impuretés
A method for producing a wiring board, including: a step of pretreating the surface of a metal layer exposed into an opening by bringing the surface into contact with a pretreatment liquid at a predetermined pretreatment temperature; and a step of forming a copper plating layer on the metal layer by electrolytic plating. The resist layer and the pretreatment liquid are selected such that a mass change rate of the resist layer when the resist layer before being exposed and developed is immersed in the pretreatment liquid is −2.0% by mass or more. The mass change rate is a value calculated by Expression: Mass change rate (% by mass)={(W1−W0)/W0}×100. W1 is the mass of the resist layer after a laminated body including a resist layer 3 and a copper foil is immersed in the pretreatment liquid at the pretreatment temperature for 30 minutes.
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H05K 3/12 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de l'impression pour appliquer le matériau conducteur
H05K 3/18 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de la précipitation pour appliquer le matériau conducteur
H05K 3/02 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué à la surface du support isolant et est ensuite enlevé de zones déterminées de la surface, non destinées à servir de conducteurs de courant ou d'éléments de blindage
There is provided a gas analyzing method capable of analyzing impurities in a sample gas with high accuracy by reducing the influence of water present in a gas cell. The gas analyzing method is a method for analyzing the impurities contained in the sample gas, and includes: a pretreatment step of reducing the partial pressure of water in a gas cell (10) into which the sample gas is introduced to 10 Pa or less; and an analysis step of introducing the sample gas into the gas cell (10) in which the pretreatment step has been carried out and detecting the impurities by Raman spectroscopy.
In a SiC substrate of the present invention, in a case where the SiC substrate is supported on an inner periphery by an inner peripheral support surface positioned to overlap a circumference having a radius of 17.5 mm from a center, in a case where a plane connecting first points of an upper surface overlapping the inner peripheral support surface when seen in a thickness direction is defined as a first reference plane, and an upper side of the first reference plane is defined as a positive side, a bow is less than 40 μm.
What is provided is a fluorine-containing ether compound represented by the following formula. R1—R2—O—CH2—R3—CH2—O—R4—R5
What is provided is a fluorine-containing ether compound represented by the following formula. R1—R2—O—CH2—R3—CH2—O—R4—R5
(R3 is a perfluoropolyether chain; R2 is represented by Formula (2), R4 is represented by Formula (3), R1 and R5 are hydrogen atoms or Formula (4); a and b in Formula (2) are an integer of 0 to 2, c in Formula (2) is an integer of 2 to 5, d and e in Formula (3) are an integer of 0 to 2, f in Formula (3) is an integer of 2 to 5; at least one of b in Formula (2) and e in Formula (3) is 1 or more; and k in Formula (4) is an integer of 3 to 6.)
What is provided is a fluorine-containing ether compound represented by the following formula. R1—R2—O—CH2—R3—CH2—O—R4—R5
(R3 is a perfluoropolyether chain; R2 is represented by Formula (2), R4 is represented by Formula (3), R1 and R5 are hydrogen atoms or Formula (4); a and b in Formula (2) are an integer of 0 to 2, c in Formula (2) is an integer of 2 to 5, d and e in Formula (3) are an integer of 0 to 2, f in Formula (3) is an integer of 2 to 5; at least one of b in Formula (2) and e in Formula (3) is 1 or more; and k in Formula (4) is an integer of 3 to 6.)
A mold for continuous casting includes a cylindrical mold body with one end serving as a molten metal supply port and the other end serving as an ingot outlet, and a carbon ring arranged on the inner peripheral surface of the cylindrical mold body, wherein the carbon ring is configured by stacking a first ring member arranged on the one end side and a second ring member arranged on the other end side.
A method for manufacturing a semiconductor device including forming a temporary fixing laminated body including a carrier, and a sealing structure body provided on a main surface of the carrier and including a plurality of semiconductor chips and a sealing portion sealing the plurality of semiconductor chips, and removing the carrier from the temporary fixing laminated body. The semiconductor chip includes a chip main body including a first surface and a second surface, and a connection terminal provided on the first surface. The sealing portion includes an integrated protective layer adjacent to the carrier in the temporary fixing laminated body, covering the second surface. The protective layer is a cured curable resin film. The protective layer and the carrier are separated by irradiating the temporary fixing laminated body with incoherent light to remove the carrier from the temporary fixing laminated body.
A method for manufacturing a semiconductor device includes preparing a temporary fixing structure body in which semiconductor elements each including a first surface on which a connection terminal is formed and a second surface are attached to a temporary fixing material, forming a curable bonding adhesive layer on the second surface of each of the semiconductor elements, attaching a carrier to one surface of the curable bonding adhesive layer opposite to the semiconductor elements, fixing the semiconductor elements to the carrier by curing the curable bonding adhesive layer, and removing the temporary fixing material. The semiconductor elements are attached onto the temporary fixing material such that the first surface of each of the semiconductor elements is directed toward the temporary fixing material, and are encapsulated with an encapsulant material such that the second surface of each of the semiconductor elements is exposed from an encapsulant material layer.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01L 21/56 - Capsulations, p.ex. couches de capsulation, revêtements
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
72.
MAGNETIC SENSOR, METHOD OF MANUFACTURING MAGNETIC SENSOR, AND SENSITIVE ELEMENT ASSEMBLY
A magnetic sensor includes: a substrate; and a sensitive portion disposed on the substrate and having a longitudinal direction and a transverse direction. The sensitive portion senses a magnetic field by a magnetic impedance effect. The sensitive portion includes a soft magnetic material layer composed of a soft magnetic material having uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction and sensing the magnetic field. The sensitive portion also includes a secondary soft magnetic material layer laminated between the substrate and the soft magnetic material layer. The secondary soft magnetic material layer is composed of a soft magnetic material with large saturation magnetization compared to the soft magnetic material constituting the soft magnetic material layer.
An aluminum alloy for automobile wheels which contains Si in a range of 8.0% to 11.5% by mass, Cu in a range of 0.7% to 1.2% by mass, Mg in a range of 0.2% to 0.6% by mass, Mn in a range of 0.30% to 0.60% by mass, Fe in a range of 0.10% to 0.30% by mass, Cr in a range of 0.01% to 0.03% by mass, and balance Al with inevitable impurities. The aluminum alloy does not contain, per 1182 μm2, two or more crystallized products containing 1% by mass or more of Cu and having a circle equivalent diameter exceeding 5 μm, does not contain, per 1182 μm2, two or more Cr-containing intermetallic compounds having a length of 8 μm or more, and does not contain, per 4726 μm2, two or more primary crystal Si particles having a circle equivalent diameter exceeding 10 μm.
The present invention relates to a chloroprene copolymer latex, a chloroprene copolymer latex composition, a chloroprene copolymer rubber molded article, a dip-molded product, and a method for producing a chloroprene copolymer latex. The method for producing a chloroprene copolymer latex has a step of emulsion polymerizing 2-chloro-1,3-butadiene (A-1) and 2-methyl-1,3-butadiene (A-2) in the presence of sulfur (A-3).
C08F 236/18 - Copolymères de composés contenant plusieurs radicaux aliphatiques non saturés et l'un au moins contenant plusieurs liaisons doubles carbone-carbone le radical ne contenant que deux doubles liaisons carbone-carbone conjuguées contenant des éléments autres que le carbone et l'hydrogène contenant des halogènes contenant du chlore
C08K 13/02 - Ingrédients organiques et inorganiques
C09D 201/06 - Compositions de revêtement à base de composés macromoléculaires non spécifiés caractérisés par la présence de groupes déterminés contenant des atomes d'oxygène
C09D 7/63 - Adjuvants non macromoléculaires organiques
Adsorbent particles including: porous carrier particles containing an organic polymer; polyethylenimine attached to a surface of the porous carrier particles; and a diglycolic acid residue bonded to an amino group of the polyethylenimine. A most frequent pore size of the porous carrier particles exceeds 10 nm.
B01J 20/28 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation caractérisées par leur forme ou leurs propriétés physiques
B01J 20/30 - Procédés de préparation, de régénération ou de réactivation
77.
ALUMINUM ALLOY FOR SLIDING COMPONENT, AND SLIDING COMPONENT
An aluminum alloy for a sliding component containing 8.0% to 12.0% by mass of Si, 0.8% to 1.1% by mass of Cu, 0.4% to 0.6% by mass of Mg, 0.30% to 0.60% by mass of Mn, 0.01% to 0.03% by mass of Cr, 0.10% to 0.30% by mass of Fe, 0.0005% to 0.0050% by mass of Ca, 0.00005% to 0.03000% by mass of Sr, and balance Al with inevitable impurities, in which a ratio Sr/Ca of a Sr content to a Ca content is in a range of 0.01 to 30, a tensile strength at 25° C. is within a range of 330 MPa to 380 MPa, the aluminum alloy does not contain, per 1182 μm2, two or more crystallized products containing 1% by mass or more of Cu and having a circle equivalent diameter exceeding 5 μm, and the aluminum alloy does not contain, per 1182 μm2, two or more Cr-containing intermetallic compounds having a length of 8 μm or more.
C22C 21/02 - Alliages à base d'aluminium avec le silicium comme second constituant majeur
C22F 1/043 - Modification de la structure physique des métaux ou alliages non ferreux par traitement thermique ou par travail à chaud ou à froid de l'aluminium ou de ses alliages d'alliages avec le silicium comme second constituant majeur
F04C 18/02 - Pompes à piston rotatif spécialement adaptées pour les fluides compressibles du type à engrènement, c. à d. avec un mouvement de translation circulaire des organes coopérants, chaque organe possédant le même nombre de dents ou de parties équivalentes de prise
78.
METHOD FOR MANUFACTURING CATALYST FOR MANUFACTURE OF VINYL ACETATE AND METHOD FOR MANUFACTURING VINYL ACETATE
A method for producing a vinyl acetate production catalyst containing a carrier, copper, palladium, gold, and an acetate, the method including in the following order: step 1) a step for impregnating the carrier with an alkaline solution; step 2) a step for contact-impregnating the carrier with a solution containing a compound containing copper, a compound containing palladium, and a compound containing gold; step 3) a step for performing reduction treatment; and step 4) a step for causing the carrier to carry the acetate.
B01J 23/89 - Catalyseurs contenant des métaux, oxydes ou hydroxydes métalliques non prévus dans le groupe du cuivre ou des métaux du groupe du fer combinés à des métaux nobles
B01J 31/04 - Catalyseurs contenant des hydrures, des complexes de coordination ou des composés organiques contenant des composés organiques ou des hydrures métalliques contenant des acides carboxyliques ou leurs sels
B01J 37/02 - Imprégnation, revêtement ou précipitation
C07C 67/055 - Préparation d'esters d'acides carboxyliques par réaction d'acides carboxyliques ou d'anhydrides symétriques sur des liaisons carbone-carbone non saturées avec oxydation en présence des métaux du groupe du platine ou de leurs composés
A thermally conductive composition contains a resin composition and a thermally conductive filler, wherein the resin composition contains a vinyl group-containing silicone resin having a viscosity ranging from 40,000 mPa·s to 200,000,000 mPa·s at 25° C. and a polysiloxane compound having at least one hydroxy group at an end, having no vinyl group, and having a weight-average molecular weight (Mw) of 10,000 or more and 20,000 or less, the mass ratio of the vinyl group-containing silicone resin to the polysiloxane compound [the vinyl group-containing silicone resin/the polysiloxane compound] is 50/50 or more and less than 90/10, the content of the thermally conductive filler ranges from 300 parts by mass to 5,000 parts by mass with respect to 100 parts by mass of the resin composition, and a cured product of the thermally conductive composition has a thermal conductivity of 1.0 W/mk or more.
A method for manufacturing a substrate with built-in components includes providing an intermediate member including an electronic component with a first electrode provided on a first surface thereof, and a first electrically conductive layer provided on the first surface of the electronic component so as to cover the first electrode, and forming a first insulating resin layer on a first surface of the intermediate member. The first electrically conductive layer includes a first curable adhesive layer formed from a curable adhesive layer including electrically conductive particles and a cured adhesive composition, and a first metal foil layer disposed on the first curable adhesive layer that is a surface on a side opposite to the electronic component. The electrically conductive particles of the first curable adhesive layer electrically connect the first electrode of the electronic component and the first metal foil layer.
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
H05K 3/12 - Appareils ou procédés pour la fabrication de circuits imprimés dans lesquels le matériau conducteur est appliqué au support isolant de manière à former le parcours conducteur recherché utilisant la technique de l'impression pour appliquer le matériau conducteur
A photosensitive element according to the present disclosure can be produced by a method including a step of forming a photosensitive layer on a support film using a photosensitive resin composition and a step of bonding a winding outer surface of a protective film having a roll shape onto the photosensitive layer, and includes a support film, a photosensitive layer provided on one surface of the support film, and a protective film provided on a surface of the photosensitive layer opposite to the support film, and the protective film has a weld line on a surface opposite to the photosensitive layer.
G03F 7/11 - Matériaux photosensibles - caractérisés par des détails de structure, p.ex. supports, couches auxiliaires avec des couches de recouvrement ou des couches intermédiaires, p.ex. couches d'ancrage
82.
ETCHING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
An etching method including an etching step of bringing an etching gas which contains nitrosyl fluoride and has been converted into plasma into contact with a member to be etched (9) having an etching object and a non-etching object, and selectively etching the etching object as compared with the non-etching object. The etching step is performed in a chamber (7) containing the member to be etched (9) using a remote plasma generation device (16) provided outside the chamber (7) as a plasma generation source. The concentration of nitrosyl fluoride in the etching gas is 0.3 vol % or more, the temperature condition of the etching step is 0° C. to 250° C., and the pressure condition of the etching step is 100 Pa or more and 3 kPa or less. The etching object includes silicon nitride. Also disclosed is a method for producing a semiconductor device using the etching method.
The present invention relates to a maleimide resin composition containing (A) one or more selected from the group consisting of a maleimide compound having one or more N-substituted maleimide groups and a derivative thereof; and (B) a polymer having a hydrocarbon chain or a polyether chain in a main chain thereof, wherein the component (A) contains (A1) a maleimide compound having one or more N-substituted maleimide groups and a molecular weight of less than 600 and (A2) a maleimide compound having one or more N-substituted maleimide groups and a molecular weight of 600 or more. The present invention also relates to a prepreg, a laminated board, a resin film, a printed wiring board, and a semiconductor package that are obtained by using the maleimide resin composition.
C08L 35/00 - Compositions contenant des homopolymères ou des copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone l'un au moins étant terminé par un radical carboxyle ; Compositions contenant des dérivés de tels polymères
C08J 5/24 - Imprégnation de matériaux avec des prépolymères pouvant être polymérisés en place, p.ex. fabrication des "prepregs"
In the SiC substrate, when resistivities at a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end thereof and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [−1-120] direction from the center, and at two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [−1-120] direction from the center are measured, a difference between the maximum resistivity and the minimum resistivity among the resistivities of each of the plurality of first measurement points and the two second measurement points is 2 mΩ·cm or less, and a region other than a high nitrogen concentration region called a facet is included.
B32B 3/00 - Produits stratifiés caractérisés essentiellement par le fait qu'une des couches comporte des discontinuités ou des rugosités externes ou internes, ou bien qu'une des couches est de forme générale non plane; Produits stratifiés caractérisés essentiellement par des particularismes de forme
Provided is a paste including: a metallic element-containing powder; an epoxy group-containing compound; and a curing agent, wherein a thermogravimetric reduction rate is 5% or less after heat curing at 180° C. The paste can be suitably used as a material for a magnetic core of an inductor or as a material for filling between conductors of a coil, and is capable of easily providing a formed body having excellent insulation properties.
FILM ADHESIVE AND METHOD FOR MAKING SAME; DICING/DIE BONDING INTEGRATED FILM AND METHOD FOR MAKING SAME; AND SEMICONDUCTOR DEVICE AND METHOD FOR MAKING SAME
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor chip; a support member having the semiconductor chip mounted thereon; and a bonding adhesive member provided between the semiconductor chip and the support member and adhering the semiconductor chip and the support member. The bonding adhesive member includes a sintered body of silver particles.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
C08L 61/04 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols
H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs
C09J 161/04 - Polymères de condensation obtenus uniquement à partir d'aldéhydes ou de cétones avec des phénols
The present invention relates to a resin composition containing (A) at least one selected from the group consisting of a maleimide compound including a fused ring of an aromatic ring and an aliphatic ring in the molecular structure thereof, and having two or more N-substituted maleimide groups, and its derivative, and (B) a resin having a tensile elastic modulus of 10 GPa or less at 25° C., and a prepreg, a laminated plate, a resin film, a printed wiring board, and a semiconductor package which use the resin composition.
C08F 257/02 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères de monomères aromatiques tels que définis dans le groupe sur des polymères de styrène ou de styrène substitué par des groupes alkyle
C08L 51/06 - Compositions contenant des polymères greffés dans lesquels le composant greffé est obtenu par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone; Compositions contenant des dérivés de tels polymères greffés sur des homopolymères ou des copolymères d'hydrocarbures aliphatiques ne contenant qu'une seule liaison double carbone-carbone
C08J 5/24 - Imprégnation de matériaux avec des prépolymères pouvant être polymérisés en place, p.ex. fabrication des "prepregs"
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
A SiC single crystal substrate of an embodiment is a SiC single crystal substrate wherein the main plane of the SiC single crystal substrate has an off angle of 0° to 6° to the (0001) plane in the <11-20> direction and an off angle of 0° to 0.5° to the (0001) plane in the <1-100> direction, and includes non-MP defects wherein when the Si surface is etched in molten KOH at 500° C. for 15 minutes, the non-MP defects that appear by etching are hexagonal and have no core, the area of the observed etch pit of the non-MP defect is more than 10% larger than that of the observed etch pit of the TSD and is less than 110% of that of the observed etch pit of the micropipe (MP), and a transmission X-ray topography image of the non-MP defect is distinguishable from the transmission X-ray topography image of the micropipe (MP), wherein etch pits, which are identified as the non-MP defects, appear in the range of 0.1/cm2 to 50/cm2.
C30B 29/60 - Monocristaux ou matériaux polycristallins homogènes de structure déterminée caractérisés par leurs matériaux ou par leur forme caractérisés par la forme
C30B 33/10 - Gravure dans des solutions ou des bains fondus
A SiC single crystal substrate of an embodiment has a diameter being 199 mm or more, wherein the density of threading dislocations per area of 0.25 mm2 arbitrarily selected in the main surface of the SiC single crystal substrate is 5×104/cm2 or less, and the threading dislocations include a threading edge dislocation.
A packing material, wherein to a porous organic polymer carrier including 60 to 95 mol % of a repeating unit derived from glycidyl methacrylate and 5 to 40 mol % of a repeating unit derived from a polyfunctional monomer, one end of at least one alkylene group selected from a linear alkylene group, a cycloalkylene group, and a linear alkylcycloalkylene group, having 4 to 9 carbon atoms is bonded by a glycidyl group derived from glycidyl methacrylate, and an other end of the alkylene group is bonded to any one end of a polyol via an ether bond.
B01J 20/28 - Compositions absorbantes ou adsorbantes solides ou compositions facilitant la filtration; Absorbants ou adsorbants pour la chromatographie; Procédés pour leur préparation, régénération ou réactivation caractérisées par leur forme ou leurs propriétés physiques
B01J 20/285 - Absorbants ou adsorbants poreux à base de polymères
Provided are a polyimide precursor which contains a diamine-derived structural unit and a tetracarboxylic dianhydride-derived structural unit, contains a dimer diamine-derived structural unit in an amount of at least 10 mol % but not more than 80 mol % relative to total units of the diamine-derived structural unit, has a weight average molecular weight of at least 15,000 but not more than 130,000, and is used for a base film of a flexible printed circuit board, as well as a resin composition containing the polyimide precursor, and a polyimide obtained using the resin composition.
The present invention relates to a maleimide resin composition containing (A) one or more selected from the group consisting of a maleimide compound having one or more N-substituted maleimide groups and a derivative thereof, and (B) a polymer having a hydrocarbon chain or a polyether chain in a main chain thereof, wherein the component (A) dissolves in an alcohol-based solvent, a ketone-based solvent, an aromatic hydrocarbon-based solvent, an ester-based solvent, or a nitrogen atom-containing solvent in an amount of 30% by mass or more at 25° C. The present invention also relates to a prepreg, a laminate, a resin film, a printed wiring board, and a semiconductor package that are obtained by using the maleimide resin composition.
C08F 279/02 - Composés macromoléculaires obtenus par polymérisation de monomères sur des polymères de monomères contenant plusieurs liaisons doubles carbone-carbone tels que définis dans le groupe sur des polymères de diènes conjugués
C08J 5/24 - Imprégnation de matériaux avec des prépolymères pouvant être polymérisés en place, p.ex. fabrication des "prepregs"
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
C08L 51/06 - Compositions contenant des polymères greffés dans lesquels le composant greffé est obtenu par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone; Compositions contenant des dérivés de tels polymères greffés sur des homopolymères ou des copolymères d'hydrocarbures aliphatiques ne contenant qu'une seule liaison double carbone-carbone
H01L 23/14 - Supports, p.ex. substrats isolants non amovibles caractérisés par le matériau ou par ses propriétés électriques
93.
WATER FILM EVALUATION METHOD, AND ANTIFOGGING AGENT EVALUATION METHOD
A method for evaluating water film is a method for evaluating water film uniformity, and the method includes: a first step of preparing a base material for water film formation having a principal surface for forming a water film thereon; a second step of capturing an image of an object having a pattern in which a plurality of regions having predetermined brightness are disposed in a predetermined area, through the base material for water film formation having a water film formed on the principal surface, to obtain an image for evaluation; and a third step of deriving a water film uniformity index indicating uniformity of the water film based on the area distribution of the regions having predetermined brightness in the image for evaluation.
In a SiC substrate according to the present embodiment, a proportion of a first region in which a difference between a maximum value and a minimum value of absorption coefficient for light having a wavelength of 1064 nm is 0.25 cm−1 or less is 70% or more of the total area.
In a SiC substrate according to the present embodiment, between any two adjacent measurement points among a plurality of first measurement points including a center and a plurality of measurement points separated from the center by 10 mm in an [11-20] direction or [−1-120] direction, a difference in absorption coefficient for light having a wavelength of 1064 nm is 0.25 cm−1 or less.
An 8 inch n-type SiC single crystal substrate of an embodiment has a diameter in the range of 195 to 205 mm, a thickness in the range of 300 μm to 650 μm, thicknesses of work-affected layers on both the front and back sides are 0.1 nm or less, and the dopant concentration is 2×1018/cm3 or more and 6×1019/cm3 or less at least five arbitrarily selected points in the plane within 5% of the thickness of the substrate in the depth direction from the main surface of the substrate.
An 8-inch SiC single crystal substrate of an embodiment has a diameter in a range of 195 mm to 205 mm, a thickness in a range of 300 μm to 650 μm, a SORI of 50 μm or less, and an in-plane variation of the thickness of the substrate, which is the difference between the maximum and minimum substrate thickness at the center of the substrate and four points on the circumference of a circle having a radius half the radius of the substrate, is 1.5 μm or less.
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
A slurry containing: abrasive grains; a compound X; and water, in which the abrasive grains contain cerium oxide, and a hydrogen bond term dH in Hansen solubility parameters of the compound X is 15.0 MPa1/2 or more. A polishing method including polishing a surface to be polished by using this slurry.
H01L 21/784 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs qui consistent chacun en un seul élément de circuit le substrat étant un corps semi-conducteur
99.
METHOD FOR EVALUATING COMPATIBILITY OF THERMOSETTING RESIN COMPOSITION, THERMOSETTING RESIN COMPOSITION, PREPREG, RESIN FILM, LAMINATED PLATE, MULTILAYER PRINTED WIRING BOARD, AND SEMICONDUCTOR PACKAGE
A method for evaluating the compatibility of a thermosetting resin composition containing at least two kinds of resins and an inorganic filler, the method including the following steps 1A and 2A: Step 1A: a step of obtaining a reflected electronic image of the cross section of a cured product of the thermosetting resin composition using a scanning electron microscope at an observation magnification of 50 to 250 times; and Step 2A: a step in which, in the reflected electronic image, a phase-separated resin region is referred to as a separation part and the remaining region is referred to as a non-separation part, and the image is binarized such that the separation part has one value and the non-separation part has the other value, and the area ratio of the region of the non-separation part of the resultant binarized image to the total region of the binarized image (area of the region of the non-separation part×100/area of the total region of the binarized image) is calculated as the area ratio Rw of the non-separation part.
C08L 35/00 - Compositions contenant des homopolymères ou des copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone l'un au moins étant terminé par un radical carboxyle ; Compositions contenant des dérivés de tels polymères
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
A method for removing an oxygen molecule from a carbon-monoxide-containing gas which includes removing water from a platinum catalyst by heat treating the platinum catalyst in a heat treatment vessel until the concentration of water contained in inert gas discharged from the heat treatment vessel after being supplied to the heat treatment vessel and used in the heat treatment is less than 1000 vol ppm; and bringing the carbon-monoxide-containing gas into contact with the platinum catalyst to remove an oxygen molecule from the carbon-monoxide-containing gas. Also disclosed is a step of removing carbon dioxide from gas after removing an oxygen molecule using a carbon dioxide adsorbent, as well as a pressure swing adsorption step of recovering carbon monoxide from gas after removing carbon dioxide by a pressure swing adsorption method, to obtain purified carbon monoxide having a purity of 99.95 vol % or more.
brevets
