A method and apparatus in which a data stream is received that includes constant bit rate (CBR) carrier streams, at least one of which comprises frames, a cumulative phase offset report (CPOR) and a client rate report (CRR). A counter accumulating a PHY-scaled stream clock (IPSCk) is sampled at a nominal sampling period (Tps) to obtain a cumulative PHY-scaled count (CPSC). A PHY-scaled stream phase offset (PSPO) is calculated that indicates phase difference between PHY-scaled stream nominal bit count (LPSD) and an incoming PHY-scaled count delta (IPSD). The data stream is demultiplexed to obtain CBR carrier streams. Respective CBR carrier streams include a previous network node CPOR (CPOR-P) and a previous network node CPO (CPO-P). A CPO is calculated that is a function of CPO-P and PSPO. CPO-P is replaced with the calculated CPO. The CBR carrier streams are multiplexed into intermediate-network-node data streams that are transmitted from the intermediate-network-node.
One or more examples relate to voltage level shifting. An example apparatus may include first and second inputs, an output, and a circuit. The first and second inputs may receive compliments of a signal represented by first voltage levels. The output may provide the signal represented by second voltage levels. The circuit may change voltage levels utilized to represent the signal from first voltage levels to second voltage levels. The circuit may include cross-coupled first high voltage switches, a pair of series coupled switches, and a pair of voltage clamping switches. The cross-coupled first high voltage switches may selectively couple the output to a high voltage node responsive to a high voltage level of the signal. The pair of series coupled switches may comprising respective second high voltage switches, and the pair of series coupled switches may selectively couple the output to a first voltage supply. The pair of voltage clamping switches may increase OFF-resistance of the respective second high voltage switches of the pair of series coupled switches responsive to a low voltage level at the respective input.
One or more examples relate to voltage level shifting. An example apparatus (100) may include first and second inputs (102, 104), an output (106), and a circuit. The first and second inputs may receive compliments (VIN+, VIN-) of a signal represented by first voltage levels. The output may provide the signal represented by second voltage levels. The circuit may change voltage levels utilized to represent the signal from first voltage levels to second voltage levels. The circuit may include cross-coupled first high voltage switches (HV MP1, HV MP2), a pair of series coupled switches (114, 116), and a pair of voltage clamping switches (108, 110). The cross-coupled first high voltage switches may selectively couple the output to a high voltage node (Vnode) responsive to a high voltage level of the signal. The pair of series coupled switches may comprising respective second high voltage switches, and the pair of series coupled switches may selectively couple the output to a first voltage supply. The pair of voltage clamping switches may increase OFF-resistance of the respective second high voltage switches of the pair of series coupled switches responsive to a low voltage level at the respective input.
An apparatus having a substrate having first and second substrate contacts; a chip having a front-side chip contact and first and second back-side chip contacts, the front-side chip contact electrically connected to the first substrate contact; a chiplet having a chiplet contact electrically connected the first back-side chip contact; and a lead electrically connected to the second back-side chip contact and electrically connected to the second substrate contact.
5.
SWITCHING DATA BASED ON A BUS IDENTIFIER AND A DEVICE IDENTIFIER
One or more examples relate to an apparatus to switch data based on a bus identifier and a device identifier. Such an apparatus may include an upstream port for a respective peripheral component interconnect express (PCIe)-compliant communicative connection with a host; a downstream port for a respective PCIe-compliant communicative connection with an endpoint; and a switching logic. The switching logic may store a bus identifier and a device identifier for the endpoint; and switch data at least partially responsive to the bus identifier and the device identifier of the endpoint.
6.
SUPPLY VOLTAGE BASED OR TEMPERATURE BASED FINE CONTROL OF A TUNABLE OSCILLATOR OF A PLL
One or more examples relate, generally to supply voltage based or temperature based fine control of a tunable oscillator of a PLL. An associated method includes: receiving one or more values indicative of temperature or supply voltage of a phase-locked loop (PLL); setting a digital fine-tuning control code to an initialization code, the initialization code at least partially based on the received one or more values indicative of temperature or supply voltage of the PLL, wherein the digital fine-tuning control code for setting a number of tuning-elements within a fine bank of a tunable oscillator; and starting, with the set digital fine-tuning control code, a process to set an initial frequency of the oscillator at or close to a target frequency. The process may be a calibration process performed before initially acquiring lock or re-acquiring lock.
H03L 7/099 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
7.
EMI Reduction in PLCA-Based Networks Through Beacon Temporal Spreading
An apparatus may be communicatively coupled to other nodes in a network. The apparatus may include a control circuit configured to repeatedly issue transmission cycles to the other nodes. A given transmission cycle may include a least one send slot for each of the other nodes to send data. The control circuit may be configured to initiate transmission cycles by issuing beacon signals to the other nodes. The control circuit may be configured to determine when to issue a beacon signal in a given transmission cycle by determining that all of the other nodes have completed all associated send slots in an immediately previous transmission cycle and based upon a determination of the completion of the other nodes' transmission, delaying transmission of the beacon signal for the given transmission cycle.
H04L 12/413 - Réseaux à ligne bus avec commande décentralisée avec accès aléatoire, p.ex. accès multiple avec détection de porteuse et détection de collision (CSMA-CD)
8.
INTEGRATED CIRCUIT PACKAGE WITH BACKSIDE LEAD FOR CLOCK TREE OR POWER DISTRIBUTION NETWORK CIRCUITS
An apparatus having a substrate having first and second substrate contacts; a chip having a front-side chip contact and first and second back-side chip contacts, the front-side chip contact electrically connected to the first substrate contact; a chiplet having a chiplet contact electrically connected the first back-side chip contact; and a lead electrically connected to the second back-side chip contact and electrically connected to the second substrate contact.
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs sous-groupes différents du même groupe principal des groupes , ou dans une seule sous-classe de ,
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans le même sous-groupe des groupes , ou dans une seule sous-classe de , , p.ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
9.
METHOD OF FORMING MEMORY CELLS, HIGH VOLTAGE DEVICES AND LOGIC DEVICES ON A SEMICONDUCTOR SUBSTRATE
A method includes recessing an upper surface of a substrate in first and second areas relative to a third area, forming a first conductive layer in the first area, forming a second conductive layer in the three areas, selectively removing the first and second conductive layers in the first area, while maintaining the second conductive layer in the second and third areas, leaving pairs of stack structures in the first area respectively having a control gate of the second conductive layer and a floating gate of the first conductive layer, forming a third conductive layer in the three areas, recessing the upper surface of the third conductive layer below tops of the stack structures and removing the third conductive layer from the second and third areas, removing the second conductive layer from the second and third areas, and forming blocks of metal material in the second and third areas.
H01L 27/11531 - Fabrication simultanée de périphérie et de cellules de mémoire
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
H01L 29/66 - Types de dispositifs semi-conducteurs
10.
APPARATUS AND METHOD FOR ACTIVE INDUCTOR MODULATION
An active inductor modulator circuit is provided. The active inductor modulator circuit may include a circuit to receive an input signal and provide an output signal at an output terminal of the circuit based on a clock signal, a modulated active inductor coupled to the circuit to improve a time delay between the input signal and the provided output signal, and a modulation clock circuit to generate a delayed clock signal to enable the modulated active inductor prior to a transition of the output signal from a first logic state to a second logic state.
One or more examples relate, generally to supply voltage based or temperature based fine control of a tunable oscillator of a PLL. An associated method includes: receiving one or more values indicative of temperature or supply voltage of a phase-locked loop (PLL); setting a digital fine-tuning control code to an initialization code, the initialization code at least partially based on the received one or more values indicative of temperature or supply voltage of the PLL, wherein the digital fine-tuning control code for setting a number of tuning-elements within a fine bank of a tunable oscillator; and starting, with the set digital fine-tuning control code, a process to set an initial frequency of the oscillator at or close to a target frequency. The process may be a calibration process performed before initially acquiring lock or re-acquiring lock.
H03L 7/099 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
H03L 1/00 - Stabilisation du signal de sortie du générateur contre les variations de valeurs physiques, p.ex. de l'alimentation en énergie
H03L 1/02 - Stabilisation du signal de sortie du générateur contre les variations de valeurs physiques, p.ex. de l'alimentation en énergie contre les variations de température uniquement
12.
Apparatus and Method for Active Inductor Modulation
An active inductor modulator circuit is provided. The active inductor modulator circuit may include a circuit to receive an input signal and provide an output signal at an output terminal of the circuit based on a clock signal, a modulated active inductor coupled to the circuit to improve a time delay between the input signal and the provided output signal, and a modulation clock circuit to generate a delayed clock signal to enable the modulated active inductor prior to a transition of the output signal from a first logic state to a second logic state.
A USB control method comprising: counting errors encountered by a USB connection; comparing a number of counted errors to an error count threshold within a set time frame; identifying a port speed configuration for the USB connection; and changing the port speed configuration for the USB connection to a slower port speed configuration than the identified port speed configuration.
A method of forming a device on a silicon substrate having first, second and third areas includes recessing an upper substrate surface in the first and third areas, forming an upwardly extending silicon fin in the second area, forming first source, drain and channel regions in the first area, forming second source, drain and channel regions in the fin, forming third source, drain and channel regions in the third area, forming a floating gate over a first portion of the first channel region using a first polysilicon deposition, forming an erase gate over the first source region and a device gate over the third channel region using a second polysilicon deposition, and forming a word line gate over a second portion of the first channel region, a control gate over the floating gate, and a logic gate over the second channel region using a metal deposition.
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 27/11556 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs avec grilles flottantes caractérisées par des agencements tridimensionnels, p.ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p.ex. avec des canaux inclinés les canaux comprenant des parties verticales, p.ex. des canaux en forme de U
15.
AUTOMATIC USB3 HUB FOR DETECTING AND CHANGING LINK SPEED
A USB control method comprising: counting errors encountered by a USB connection; comparing a number of counted errors to an error count threshold within a set time frame (404); identifying a port speed configuration for the USB connection (408); and changing the port speed configuration for the USB connection to a slower port speed configuration than the identified port speed configuration (414)
One or more examples relate, generally, to providing timing signals to gate drivers of a converter. An example apparatus for providing timing signals to gate drivers of a converter includes a circuit that includes a timing input, and a plurality of outputs. The timing input may receive an incoming timing signal. The plurality of outputs may couple to a respective plurality of gate drivers to control an output voltage of a converter. The circuit may provide respective timing signals, at respective ones of the plurality of outputs at least partially responsive to the incoming timing signal, the respective timing signals synchronized such that like edges of the respective timing signals coincide.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p.ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H02M 1/088 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques pour la commande simultanée de dispositifs à semi-conducteurs connectés en série ou en parallèle
H03K 17/28 - Modifications pour introduire un retard avant commutation
H03K 17/64 - Commutation ou ouverture de porte électronique, c. à d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors bipolaires à charges inductives
17.
METHOD OF FORMING A DEVICE WITH PLANAR SPLIT GATE NON-VOLATILE MEMORY CELLS, PLANAR HV DEVICES, AND FINFET LOGIC DEVICES ON A SUBSTRATE
A method of forming a device on a silicon substrate having first, second and third areas includes recessing an upper substrate surface in the first and third areas, forming an upwardly extending silicon fin in the second area, forming first source, drain and channel regions in the first area, forming second source, drain and channel regions in the fin, forming third source, drain and channel regions in the third area, forming a floating gate over a first portion of the first channel region using a first polysilicon deposition, forming an erase gate over the first source region and a device gate over the third channel region using a second polysilicon deposition, and forming a word line gate over a second portion of the first channel region, a control gate over the floating gate, and a logic gate over the second channel region using a metal deposition.
H01L 21/8238 - Transistors à effet de champ complémentaires, p.ex. CMOS
H01L 27/11546 - Fabrication simultanée de périphérie et de cellules de mémoire incluant différents types de transistors périphériques
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
18.
METHOD OF FORMING MEMORY CELLS, HIGH VOLTAGE DEVICES AND LOGIC DEVICES ON A SEMICONDUCTOR SUBSTRATE
A method includes recessing an upper surface of a substrate in first and second areas relative to a third area, forming a first conductive layer in the first area, forming a second conductive layer in the three areas, selectively removing the first and second conductive layers in the first area, while maintaining the second conductive layer in the second and third areas, leaving pairs of stack structures in the first area respectively having a control gate of the second conductive layer and a floating gate of the first conductive layer, forming a third conductive layer in the three areas, recessing the upper surface of the third conductive layer below tops of the stack structures and removing the third conductive layer from the second and third areas, removing the second conductive layer from the second and third areas, and forming blocks of metal material in the second and third areas.
H01L 27/11546 - Fabrication simultanée de périphérie et de cellules de mémoire incluant différents types de transistors périphériques
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
An apparatus includes two PHY circuits, each including a PHY transmitter circuit and connected to a universal serial bus (USB)-C connector. The apparatus includes a USB circuit to issue a receiver detect signal through one of the PHY transmitters circuit to the USB-C connector, issue another receiver detect signal through the other PHY transmitter circuit to the USB-C connector, determine which receiver detect signal resulted in a termination in a USB-C element, and consequently determine an orientation of a USB plug connected between the apparatus and the USB-C element.
An apparatus includes two PHY circuits, each including a PHY transmitter circuit and connected to a universal serial bus (USB)-C connector. The apparatus includes a USB circuit to issue a receiver detect signal through one of the PHY transmitters circuit to the USB-C connector, issue another receiver detect signal through the other PHY transmitter circuit to the USB-C connector, determine which receiver detect signal resulted in a termination in a USB-C element, and consequently determine an orientation of a USB plug connected between the apparatus and the USB-C element.
A device with one-time-programmable (OTP) memory, boot code, volatile memory, and non-volatile memory. Boot code may use information in OTP to authenticate code of an implicit owner of the electronic device; receive a first create owner container request; create a first owner container comprising a first signed data image; store the first owner container; and use the first signed data image to authenticate first executable code associated with the first owner. Boot code may transfer ownership from the first owner to a second owner, including authenticating a signed transfer of ownership command using a key stored in the first owner container and creating a second owner container comprising a second signed data image associated with the second owner; storing the second owner container; revoking the first owner container; and using the second signed data image to authenticate second executable code associated with the second owner of the electronic device.
A metal-insulator-metal (MIM) capacitor module includes an outer electrode, an insulator, an inner electrode, an outer electrode extension structure, an inner electrode contact element, and an outer electrode contact element. The outer electrode includes a plurality of vertically-extending outer electrode sidewalls. The insulator is formed in an opening defined by the vertically-extending outer electrode sidewalls, and includes a plurality of vertically-extending insulator sidewalls. The inner electrode formed in an interior opening defined by the insulator. The outer electrode extension structure extends laterally from a particular vertically-extending outer electrode sidewall. The inner electrode contact element and outer electrode contact element are formed in a metal layer. The inner electrode contact element is electrically connected to the inner electrode, and the outer electrode contact element is electrically connected to the outer electrode extension structure.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 49/02 - Dispositifs à film mince ou à film épais
23.
METAL-INSULATOR-METAL (MIM) CAPACITOR MODULE WITH DIELECTRIC SIDEWALL SPACER
A metal-insulator-metal (MIM) capacitor includes a bottom electrode cup, an insulator cup, and a top electrode. The bottom electrode cup includes a laterally-extending bottom electrode cup base, and a bottom electrode cup sidewall extending upwardly from the laterally-extending bottom electrode cup base. The insulator cup is formed in an opening defined by the bottom electrode cup, and includes a laterally-extending insulator cup base formed over the laterally-extending bottom electrode cup base, and an insulator cup sidewall extending upwardly from the laterally-extending insulator cup base. A dielectric sidewall spacer is located between the insulator cup sidewall and the bottom electrode cup sidewall. The top electrode is formed in an opening defined by the insulator cup.
This description relates, generally, to protecting a circuit from an input voltage. Various examples include an apparatus including one or more circuits to draw current from, or provide current to, a pair of connectors for an input circuit. The connectors may be for electrical coupling to first and second terminals of a twisted pair. The one or more circuits may be at least partially responsive to positive and negative biasing signals. The apparatus may additionally include an operational amplifier to generate the positive and negative biasing signals. The operational amplifier may include: a first input terminal at least partially responsive to a reference voltage and a second input terminal at least partially responsive to a common-mode voltage of the input circuit. Related systems and methods are also disclosed.
A device with one-time-programmable (OTP) memory, boot code, volatile memory, and non- volatile memory. Boot code may use information in OTP to authenticate code of an implicit owner of the electronic device; receive a first create owner container request; create a first owner container comprising a first signed data image; store the first owner container; and use the first signed data image to authenticate first executable code associated with the first owner. Boot code may transfer ownership from the first owner to a second owner, including authenticating a signed transfer of ownership command using a key stored in the first owner container and creating a second owner container comprising a second signed data image associated with the second owner; storing the second owner container; revoking the first owner container; and using the second signed data image to authenticate second executable code associated with the second owner of the electronic device.
G06F 21/57 - Certification ou préservation de plates-formes informatiques fiables, p.ex. démarrages ou arrêts sécurisés, suivis de version, contrôles de logiciel système, mises à jour sécurisées ou évaluation de vulnérabilité
Disclosed are systems, methods, and devices for communicating a source of a 10SPE wake. Such a communication may be performed over a low-pin count hardware interface of a 10SPE physical layer (PHY) module having a split arrangement. A controller side of a 10SPE PHY may perform a local or remote 10SPE wake forward in response to a communicated source of a wake. Also disclosed is a digital interface for operatively coupling a PHY controller to PHY transceiver over a low-pin count connection, where the digital interface includes circuitry for checking the integrity of circuitry of the digital interface. Also disclosed is a PHY transceiver of a 10SPE PHY, where the transceiver includes a circuitry for controlling a starting polarity of frames.
H04L 69/28 - Minuteurs ou mécanismes de chronométrage utilisés dans les protocoles
H04L 69/323 - Protocoles de communication intra-couche entre entités paires ou définitions d'unité de données de protocole [PDU] dans la couche physique [couche OSI 1]
This description relates, generally, to protecting a circuit from an input voltage. Various examples include an apparatus including one or more circuits to draw current from, or provide current to, a pair of connectors for an input circuit. The connectors may be for electrical coupling to first and second terminals of a twisted pair. The one or more circuits may be at least partially responsive to positive and negative biasing signals. The apparatus may additionally include an operational amplifier to generate the positive and negative biasing signals. The operational amplifier may include: a first input terminal at least partially responsive to a reference voltage and a second input terminal at least partially responsive to a common-mode voltage of the input circuit. Related systems and methods are also disclosed.
A metal-insulator-metal (MIM) capacitor includes a bottom electrode cup, an insulator cup, and a top electrode. The bottom electrode cup includes a laterally-extending bottom electrode cup base, and a bottom electrode cup sidewall extending upwardly from the laterally-extending bottom electrode cup base. The insulator cup is formed in an opening defined by the bottom electrode cup, and includes a laterally-extending insulator cup base formed over the laterally-extending bottom electrode cup base, and an insulator cup sidewall extending upwardly from the laterally-extending insulator cup base. A dielectric sidewall spacer is located between the insulator cup sidewall and the bottom electrode cup sidewall. The top electrode is formed in an opening defined by the insulator cup.
A metal-insulator-metal (MIM) capacitor module includes an outer electrode, an insulator, an inner electrode, an outer electrode extension structure, an inner electrode contact element, and an outer electrode contact element. The outer electrode includes a plurality of vertically-extending outer electrode sidewalls. The insulator is formed in an opening defined by the vertically-extending outer electrode sidewalls, and includes a plurality of vertically-extending insulator sidewalls. The inner electrode formed in an interior opening defined by the insulator. The outer electrode extension structure extends laterally from a particular vertically-extending outer electrode sidewall. The inner electrode contact element and outer electrode contact element are formed in a metal layer. The inner electrode contact element is electrically connected to the inner electrode, and the outer electrode contact element is electrically connected to the outer electrode extension structure.
H01L 49/02 - Dispositifs à film mince ou à film épais
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
30.
SETTING LEVELS FOR A PROGRAMMING OPERATION IN A NEURAL NETWORK ARRAY
In one example, a method comprises determining a program resolution current value; and setting levels for a programming operation of a plurality of non-volatile memory cells in a neural network array such that a delta current between levels of each pair of adjacent cells in the plurality is a multiple of the program resolution current value.
G11C 16/10 - Circuits de programmation ou d'entrée de données
G11C 16/04 - Mémoires mortes programmables effaçables programmables électriquement utilisant des transistors à seuil variable, p.ex. FAMOS
G11C 16/34 - Détermination de l'état de programmation, p.ex. de la tension de seuil, de la surprogrammation ou de la sousprogrammation, de la rétention
G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p.ex. de tension, de courant, de phase, de fréquence
G11C 16/14 - Circuits pour effacer électriquement, p.ex. circuits de commutation de la tension d'effacement
Disclosed are systems, methods, and devices for communicating a source of a 10SPE wake. Such a communication may be performed over a low-pin count hardware interface of a 10SPE physical layer (PHY) module having a split arrangement. A controller side of a 10SPE PHY may perform a local or remote 10SPE wake forward in response to a communicated source of a wake. Also disclosed is a digital interface for operatively coupling a PHY controller to PHY transceiver over a low-pin count connection, where the digital interface includes circuitry for checking the integrity of circuitry of the digital interface. Also disclosed is a PHY transceiver of a 10SPE PHY, where the transceiver includes a circuitry for controlling a starting polarity of frames.
An electronic device may have a plurality of defined life cycle stages and a one-time-programmable (OTP) memory comprising a plurality of life cycle bits, wherein respective bit patterns of the life cycle bits may correspond with respective life cycle stages of the defined life cycle stages. The electronic device may also have a boot code stored in read only memory and executable by a processor to receive a request to transition from a current life cycle stage to a next life cycle stage and, in response to the received request, automatically generate a bit pattern corresponding to the next life cycle stage of the plurality of defined life cycle stages and program the bit pattern corresponding to the next life cycle stage of the plurality of defined life cycle stages in the OTP memory during a time when the OTP memory is not user-accessible.
G06F 21/71 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du calcul ou du traitement de l’information
G06F 21/62 - Protection de l’accès à des données via une plate-forme, p.ex. par clés ou règles de contrôle de l’accès
A low-resistance thick-wire integrated inductor may be formed in an integrated circuit (IC) device. The integrated inductor may include an elongated inductor wire defined by a metal layer stack including an upper metal layer, middle metal layer, and lower metal layer. The lower metal layer may be formed in a top copper interconnect layer, the upper metal layer may be formed in an aluminum bond pad layer, and the middle metal layer may comprise a copper tub region formed between the aluminum upper layer and copper lower layer. The wide copper region defining the middle layer of the metal layer stack may be formed concurrently with copper vias of interconnect structures in the IC device, e.g., by filling respective openings using copper electrochemical plating or other bottom-up fill process. The elongated inductor wire may be shaped in a spiral or other symmetrical or non-symmetrical shape.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
H01F 27/32 - Isolation des bobines, des enroulements, ou de leurs éléments
An electronic device may have a plurality of defined life cycle stages and a one-time-programmable (OTP) memory comprising a plurality of life cycle bits, wherein respective bit patterns of the life cycle bits may correspond with respective life cycle stages of the defined life cycle stages. The electronic device may also have a boot code stored in read only memory and executable by a processor to receive a request to transition from a current life cycle stage to a next life cycle stage and, in response to the received request, automatically generate a bit pattern corresponding to the next life cycle stage of the plurality of defined life cycle stages and program the bit pattern corresponding to the next life cycle stage of the plurality of defined life cycle stages in the OTP memory during a time when the OTP memory is not user-accessible.
G06F 21/57 - Certification ou préservation de plates-formes informatiques fiables, p.ex. démarrages ou arrêts sécurisés, suivis de version, contrôles de logiciel système, mises à jour sécurisées ou évaluation de vulnérabilité
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
35.
INTEGRATED CIRCUIT BOND PAD WITH MULTI-MATERIAL TOOTHED STRUCTURE
An integrated circuit device may include a multi-material toothed bond pad including (a) an array of vertically-extending teeth formed from a first material, e.g., aluminum, and (b) a fill material, e.g., silver, at least partially filling voids between the array of teeth. The teeth may be formed by depositing and etching aluminum or other suitable material, and the fill material may be deposited over the array of teeth and extending down into the voids between the teeth, and etched to expose top surfaces of the teeth. The array of teeth may collectively define an abrasive structure. The multi-material toothed bond pad may be bonded to another bond pad, e.g., using an ultrasonic or thermosonic bonding process, during which the abrasive teeth may abrade, break, or remove unwanted native oxide layers formed on the respective bond pad surfaces, to thereby create a direct and/or eutectic bonding between the bond pads.
H01L 23/00 - DISPOSITIFS À SEMI-CONDUCTEURS NON COUVERTS PAR LA CLASSE - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
A memory device includes a non-volatile memory cells, source regions and drain regions arranged in rows and columns. Respective ones of the columns of drain regions include first drain regions and second drain regions that alternate with each other. Respective ones of first lines electrically connect together the source regions in one of the rows of the source regions and are electrically isolated from the source regions in other rows of the source regions. Respective ones of second lines electrically connect together the first drain regions of one of the columns of drain regions and are electrically isolated from the second drain regions of the one column of drain regions. Respective ones of third lines electrically connect together the second drain regions of one of the columns of drain regions and are electrically isolated from the first drain regions of the one column of drain regions.
G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
G11C 11/54 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments simulateurs de cellules biologiques, p.ex. neurone
G11C 16/34 - Détermination de l'état de programmation, p.ex. de la tension de seuil, de la surprogrammation ou de la sousprogrammation, de la rétention
G11C 29/38 - Dispositifs de vérification de réponse
G11C 16/08 - Circuits d'adressage; Décodeurs; Circuits de commande de lignes de mots
G11C 16/12 - Circuits de commutation de la tension de programmation
G11C 16/16 - Circuits pour effacer électriquement, p.ex. circuits de commutation de la tension d'effacement pour effacer des blocs, p.ex. des réseaux, des mots, des groupes
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
37.
INITIATING SOFTAP MODE PROVISIONING OF WIFI DEVICE VIA CUSTOM DATA FIELD
One or more examples relate to a method, which includes sending, from a provisioner WiFi device to a provisionee WiFi device in an idle mode, a probe request frame including a random data in a custom data field; powering up the provisionee WiFi device in a SoftAp mode at least partially responsive to receiving the probe request frame; sending, from the provisioner WiFi device to the provisionee WiFi device in the SoftAp mode, a further probe request frame including the random data in a custom data field; sending, from the provisionee WiFi device in the SoftAp mode to the provisioner WiFi device, a probe response frame; establishing a secure WiFi connection between the provisioner WiFi device and the provisionee WiFi device utilizing passphrases respectively generated by the provisioner WiFi device and the provisionee WiFi device; and sending provisioning data, from the provisioner WiFi device to the provisionee WiFi device in SoftAp mode, via the secure WiFi connection.
Numerous examples are disclosed for performing calibration of various electrical parameters in a deep learning artificial neural network. In one example, a method comprises adjusting a bias voltage applied to one or more non-volatile memory cells in an artificial neural network, performing a performance target check on the one or more non-volatile memory cells in the artificial neural network, and repeating the adjusting and performing until the performance target check indicates an electrical parameter is within a predetermined range.
A method of forming a device on a semiconductor substrate having first, second, third and dummy areas, includes recessing the substrate upper surface in the first, second and dummy areas, forming a first conductive layer over the substrate, removing the first conductive layer from the third area and a second portion of the dummy area, forming a first insulation layer over the substrate, forming first trenches through the first insulation layer and into the substrate in the third area and the second portion of the dummy area, forming second trenches through the first insulation layer, the first conductive layer and into the substrate in the first and second areas and a first portion of the dummy area, and filling the first and second trenches with insulation material. Then, memory cells are formed in the first area, HV devices in the second area and logic devices in the third area.
H01L 27/11546 - Fabrication simultanée de périphérie et de cellules de mémoire incluant différents types de transistors périphériques
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
40.
DIGITAL-TO-ANALOG CONVERTER (DAC) DATA GENERATOR CIRCUIT
A device having a digital-to-analog converter (DAC) data generator circuit to perform a function upon an event and generate digital DAC data based on the function and the event, and a DAC circuit to generate an analog waveform signal from the digital DAC data.
A method of forming a device on a semiconductor substrate having first, second, third and dummy areas, includes recessing the substrate upper surface in the first, second and dummy areas, forming a first conductive layer over the substrate, removing the first conductive layer from the third area and a second portion of the dummy area, forming a first insulation layer over the substrate, forming first trenches through the first insulation layer and into the substrate in the third area and the second portion of the dummy area, forming second trenches through the first insulation layer, the first conductive layer and into the substrate in the first and second areas and a first portion of the dummy area, and filling the first and second trenches with insulation material. Then, memory cells are formed in the first area, HV devices in the second area and logic devices in the third area.
H01L 27/11546 - Fabrication simultanée de périphérie et de cellules de mémoire incluant différents types de transistors périphériques
H01L 27/11524 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs avec grilles flottantes caractérisées par la région noyau de mémoire avec transistors de sélection de cellules, p.ex. NON-ET
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 27/11529 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs avec grilles flottantes caractérisées par la région de circuit périphérique de régions de mémoire comprenant des transistors de sélection de cellules, p.ex. NON-ET
42.
CALIBRATION OF ELECTRICAL PARAMETERS IN A DEEP LEARNING ARTIFICIAL NEURAL NETWORK
A system and method of testing an integrated circuit provide a first clock signal to a first flip-flop with an output to a functional circuit, provide a second clock signal to a second flip-flop with an input from the functional circuit, wherein the second flip-flip has a minimum hold time, provide a test input to the first flip-flop, observe a signal propagation time through the functional circuit, determine the signal propagation time is less than the minimum hold time of the second flip-flop, and increasing a timing separation by adding a unit of delay to the first clock signal or subtracting a unit of delay from the second clock signal.
An apparatus includes a database with device profiles, and a device programmer. The device programmer includes instructions. The instructions, when read and executed by a processor, cause the device programmer to identify a device identifier of an electronic device. The device programmer is further caused to, based upon the device identifier, access device data from the database. The device programmer is further caused to, based upon the device data, determine an area of memory of the electronic device that can be written. The device programmer is further caused to, based on the determination of the area of memory of the electronic device that can be written, write data to the area of memory.
One or more examples relate to a method, which includes sending, from a provisioner WiFi device to a provisionee WiFi device in an idle mode, a probe request frame including a random data in a custom data field; powering up the provisionee WiFi device in a SoftAp mode at least partially responsive to receiving the probe request frame; sending, from the provisioner WiFi device to the provisionee WiFi device in the SoftAp mode, a further probe request frame including the random data in a custom data field; sending, from the provisionee WiFi device in the SoftAp mode to the provisioner WiFi device, a probe response frame; establishing a secure WiFi connection between the provisioner WiFi device and the provisionee WiFi device utilizing passphrases respectively generated by the provisioner WiFi device and the provisionee WiFi device; and sending provisioning data, from the provisioner WiFi device to the provisionee WiFi device in SoftAp mode, via the secure WiFi connection.
H04L 9/06 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité l'appareil de chiffrement utilisant des registres à décalage ou des mémoires pour le codage par blocs, p.ex. système DES
46.
Method Of Scanning An Image Using Non-volatile Memory Array Neural Network Classifier
A method of scanning N×N pixels using a vector-by-matrix multiplication array by (a) associating a filter of M×M pixels adjacent first vertical and horizontal edges, (b) providing values for the pixels associated with different respective rows of the filter to input lines of different respective N input line groups, (c) shifting the filter horizontally by X pixels, (d) providing values for the pixels associated with different respective rows of the horizontally shifted filter to input lines, of different respective N input line groups, which are shifted by X input lines, (e) repeating steps (c) and (d) until a second vertical edge is reached, (f) shifting the filter horizontally to be adjacent the first vertical edge, and shifting the filter vertically by X pixels, (g) repeating steps (b) through (e) for the vertically shifted filter, and (h) repeating steps (f) and (g) until a second horizontal edge is reached.
G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
G11C 11/54 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments simulateurs de cellules biologiques, p.ex. neurone
G11C 16/34 - Détermination de l'état de programmation, p.ex. de la tension de seuil, de la surprogrammation ou de la sousprogrammation, de la rétention
G11C 29/38 - Dispositifs de vérification de réponse
G11C 16/08 - Circuits d'adressage; Décodeurs; Circuits de commande de lignes de mots
G11C 16/12 - Circuits de commutation de la tension de programmation
G11C 16/16 - Circuits pour effacer électriquement, p.ex. circuits de commutation de la tension d'effacement pour effacer des blocs, p.ex. des réseaux, des mots, des groupes
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
47.
SWITCHING DATA BASED ON A BUS IDENTIFIER AND A DEVICE IDENTIFIER
One or more examples relate to an apparatus to switch data based on a bus identifier and a device identifier. Such an apparatus may include an upstream port for a respective peripheral component interconnect express (PCIe)-compliant communicative connection with a host; a downstream port for a respective PCIe-compliant communicative connection with an endpoint; and a switching logic. The switching logic may store a bus identifier and a device identifier for the endpoint; and switch data at least partially responsive to the bus identifier and the device identifier of the endpoint.
Numerous examples are disclosed for performing calibration of various electrical parameters in a deep learning artificial neural network. In one example, a system comprises a digital-to-analog converter for receiving an input of k bits and generating a first analog output, a mapping scalar for converting the first analog output into a second analog output, and an analog-to-digital converter for generating an output of n bits from the second analog output, where n is a different value than k.
G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
G06F 17/12 - Opérations mathématiques complexes pour la résolution d'équations d'équations simultanées
H03M 1/14 - Conversion par étapes, avec pour chaque étape la mise en jeu de moyens de conversion identiques ou différents et délivrant plus d'un bit
49.
SYSTEM AND METHOD TO FIX MIN-DELAY VIOLATION POST FABRICATION
A system and method of testing an integrated circuit provide a first clock signal to a first flip-flop with an output to a functional circuit, provide a second clock signal to a second flip-flop with an input from the functional circuit, wherein the second flip-flip has a minimum hold time, provide a test input to the first flip-flop, observe a signal propagation time through the functional circuit, determine the signal propagation time is less than the minimum hold time of the second flip-flop, and increasing a timing separation by adding a unit of delay to the first clock signal or subtracting a unit of delay from the second clock signal.
G01R 31/3193 - Matériel de test, c. à d. circuits de traitement de signaux de sortie avec une comparaison entre la réponse effective et la réponse connue en l'absence d'erreur
A device having a digital-to-analog converter (DAC) data generator circuit to perform a function upon an event and generate digital DAC data based on the function and the event, and a DAC circuit to generate an analog waveform signal from the digital DAC data.
An apparatus includes a sampling circuit (204) to sample input from a sensor circuit (202). The input includes a cosine coil waveform and a sine coil waveform. The sampling circuit is to generate a cosine coil sampled data stream and a sine coil sampled data stream. The apparatus includes an adjustment circuit (206) to, based upon a characterization of the sensor circuit, delay the cosine coil sampled data stream or the sine coil sampled data stream.
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p.ex. une armature mobile
G01D 3/02 - Dispositions pour la mesure prévues pour les objets particuliers indiqués dans les sous-groupes du présent groupe avec dispositions pour changer ou corriger la fonction de transfert
52.
ARTIFICIAL NEURAL NETWORK COMPRISING AN ANALOG ARRAY AND A DIGITAL ARRAY
Numerous examples are described for providing an artificial neural network system comprising an analog array and a digital array. In certain examples, an analog array and a digital array are coupled to shared bit lines. In other examples, an analog array and a digital array are coupled to separate bit lines.
G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
G11C 11/54 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments simulateurs de cellules biologiques, p.ex. neurone
G11C 11/56 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments d'emmagasinage comportant plus de deux états stables représentés par des échelons, p.ex. de tension, de courant, de phase, de fréquence
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
53.
ARTIFICIAL NEURAL NETWORK COMPRISING AN ANALOG ARRAY AND A DIGITAL ARRAY
Numerous examples are described for providing an artificial neural network system comprising an analog array and a digital array. In certain examples, an analog array and a digital array are coupled to shared bit lines. In other examples, an analog array and a digital array are coupled to separate bit lines.
Sensorless field-oriented control (FOC) of permanent magnet synchronous motor (PMSM) using saliency based estimator is generating an error due to the sensitivity in the calculation of error in estimated angular position to q-axis current due to effects of stator magnetic saliency. The solution is to generate An error correction signal combined with the estimation to generate a correct signal
An electronic device includes a transaction host, first and second peripherals, memory, an access control register, and first and second access controllers. The memory stores access control identifier management instructions, a first task related to the first peripheral, and a first bitmask indicating respective access settings for the first and second peripherals for performing the first task. The access control register includes a first access control identifier for the first peripheral and a second access control identifier for the second peripheral. The transaction host executes the access control identifier management instructions to program the first and second access control identifiers based on the first bitmask, and subsequently executes the first task. The first and second access controllers control access to the first and second peripherals, respectively, based on the respective first and second access control identifiers programmed based on the first bitmask.
G06F 21/62 - Protection de l’accès à des données via une plate-forme, p.ex. par clés ou règles de contrôle de l’accès
G06F 13/10 - Commande par programme pour dispositifs périphériques
G06F 13/28 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus d'entrée/sortie utilisant le transfert par rafale, p.ex. acces direct à la mémoire, vol de cycle
56.
Calibration of Sine-Cosine Coil Mismatches in Inductive Sensors
An apparatus includes a sampling circuit to sample input from a sensor circuit. The input includes a cosine coil waveform and a sine coil waveform. The sampling circuit is to generate a cosine coil sampled data stream and a sine coil sampled data stream. The apparatus includes an adjustment circuit to, based upon a characterization of the sensor circuit, delay the cosine coil sampled data stream or the sine coil sampled data stream.
G01D 18/00 - Test ou étalonnage des appareils ou des dispositions prévus dans les groupes
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensible; Moyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminé; Transducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p.ex. une armature mobile
G01B 7/00 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques
57.
REDUCING ERROR IN ESTIMATED ANGULAR POSITION OF A ROTOR OF A MOTOR
A simplified method for forming pairs of non-volatile memory cells using two polysilicon depositions. A first polysilicon layer is formed on and insulated from the semiconductor substrate in a first polysilicon deposition process. A pair of spaced apart insulation blocks are formed on the first polysilicon layer. Exposed portions of the first poly silicon layer are removed while maintaining a pair of polysilicon blocks of the first polysilicon layer each disposed under one of the pair of insulation blocks. A second polysilicon layer is formed over the substrate and the pair of insulation blocks in a second polysilicon deposition process. Portions of the second polysilicon layer are removed while maintaining a first polysilicon block (disposed between the pair of insulation blocks), a second polysilicon block (disposed adjacent an outer side of one insulation block), and a third polysilicon block (disposed adjacent an outer side of the other insulation block).
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
H01L 27/07 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration non répétitive les composants ayant une région active en commun
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
An EtherCAT device is disclosed. The EtherCAT device comprises a data input port to receive a signal representing data, the signal representing one of a plurality of possible logical values; and a degradation calculation circuit. The degradation calculation circuit is to read, demodulate, and convert the received signal into a digital domain representation; process the digital domain representation into slices, where the value of the received signal at a respective time is represented in a respective one of the slices; determine differences between the respective slices and reference slices; identify an intended logical value of the received signal responsive to the determined differences; determine a quantification of error at the respective time responsive to the identified logical value and the determined differences; and determine a signal quality index responsive to the determined quantification of error.
Object detection for wireless power transmitters and related systems, methods, and devices are disclosed. A controller for a wireless power transmitter is configured to receive a measurement voltage potential responsive to a tank circuit signal at a tank circuit, provide an alternating current (AC) signal to each of the plurality of transmit coils one at a time, and determine at least one of a resonant frequency and a quality factor (Q-factor) of the tank circuit responsive to each selected transmit coil of the plurality of transmit coils. The controller is also configured to select a transmit coil to use to transmit wireless power to a receive coil of a wireless power receiver responsive to the determined at least one of the resonant frequency and the Q-factor for each transmit coil of the plurality of transmit coils.
H02J 50/60 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique sensibles à la présence d’objets étrangers, p.ex. détection d'êtres vivants
H02J 50/12 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif du type couplage à résonance
H02J 50/40 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant plusieurs dispositifs de transmission ou de réception
G01R 27/26 - Mesure de l'inductance ou de la capacitance; Mesure du facteur de qualité, p.ex. en utilisant la méthode par résonance; Mesure de facteur de pertes; Mesure des constantes diélectriques
61.
OUTPUT CIRCUITRY FOR NON-VOLATILE MEMORY ARRAY IN NEURAL NETWORK
Numerous examples are disclosed for an output block coupled to a non-volatile memory array in a neural network and associated methods. In one example, a circuit for converting a current in a neural network into an output voltage comprises a non-volatile memory cell comprises a word line terminal, a bit line terminal, and a source line terminal, wherein the bit line terminal receives the current; and a switch for selectively coupling the word line terminal to the bit line terminal; wherein when the switch is closed, the current flows into the non-volatile memory cell and the output voltage is provided on the bit line terminal.
G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
G11C 11/54 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments simulateurs de cellules biologiques, p.ex. neurone
G11C 16/34 - Détermination de l'état de programmation, p.ex. de la tension de seuil, de la surprogrammation ou de la sousprogrammation, de la rétention
G11C 29/38 - Dispositifs de vérification de réponse
G11C 16/08 - Circuits d'adressage; Décodeurs; Circuits de commande de lignes de mots
G11C 16/12 - Circuits de commutation de la tension de programmation
G11C 16/16 - Circuits pour effacer électriquement, p.ex. circuits de commutation de la tension d'effacement pour effacer des blocs, p.ex. des réseaux, des mots, des groupes
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
62.
PARALLELED TRANSISTOR CELLS OF POWER SEMICONDUCTOR DEVICES
An apparatus is disclosed that includes a common drain, a common source, and a common gate, respectively, of the power semiconductor device, and paralleled transistor cells of the power semiconductor device. In various examples, a configuration of a gate structure of a first respective transistor cell coupled with the common gate is different than a configuration of a gate structure of a second respective transistor cell coupled with the common gate. Alternatively or additionally, in various examples, a configuration of a structure coupled between a first portion of the paralleled transistor cells and the common gate is different than a configuration of a structure coupled between the second portion of the paralleled transistor cells and the common gate.
An EtherCAT device with a node for use in an EtherCAT network is disclosed. The EtherCAT device includes: a clock circuit; a clock input to receive an input clock signal; a clock output to send an output clock signal; and control logic. The control logic is to determine whether to operate the EtherCAT device in a clock generation mode or a clock propagation mode, wherein in the clock generation mode, the clock circuit is to drive an oscillator to generate the input clock signal; and in the clock propagation mode, the clock circuit is to receive the input clock signal from another node in the EtherCAT network. The control logic is further to control the clock circuit to output the output clock signal for a subsequent node in the EtherCAT network based upon the input clock signal.
A charge pump cell for a charge pump is disclosed that may exhibit improved latch-up immunity. A circuit may be arranged at the charge pump cell to apply a voltage to a bulk contact of a charge transfer transistor of such a charge pump cell at least partially responsive to a relationship between a voltage at a first terminal of the charge transfer transistor and a voltage at a second terminal of the charge transfer transistor. A charge pump including one or more such charge pump cells may include a control loop that is configured to control a pumping signal at least partially responsive to a state of an output voltage of the charge pump.
H02M 3/07 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des résistances ou des capacités, p.ex. diviseur de tension utilisant des capacités chargées et déchargées alternativement par des dispositifs à semi-conducteurs avec électrode de commande
Numerous examples of summing circuits for a neural network are disclosed. In one example, a circuit for summing current received from a plurality of synapses in a neural network comprises a voltage source; a load coupled between the voltage source and an output node; a voltage clamp coupled to the output node for maintaining a voltage at the output node; and a plurality of synapses coupled between the output node and ground; wherein an output current flows through the output node, the output current equal to a sum of currents drawn by the plurality of synapses.
G06N 3/063 - Réalisation physique, c. à d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens électroniques
G11C 11/54 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments simulateurs de cellules biologiques, p.ex. neurone
G11C 16/34 - Détermination de l'état de programmation, p.ex. de la tension de seuil, de la surprogrammation ou de la sousprogrammation, de la rétention
G11C 29/38 - Dispositifs de vérification de réponse
G11C 16/08 - Circuits d'adressage; Décodeurs; Circuits de commande de lignes de mots
G11C 16/12 - Circuits de commutation de la tension de programmation
G11C 16/16 - Circuits pour effacer électriquement, p.ex. circuits de commutation de la tension d'effacement pour effacer des blocs, p.ex. des réseaux, des mots, des groupes
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
66.
SPLIT ARRAY ARCHITECTURE FOR ANALOG NEURAL MEMORY IN A DEEP LEARNING ARTIFICIAL NEURAL NETWORK
Numerous embodiments are disclosed for splitting a physical array into multiple arrays for separate vector-by-matrix multiplication (VMM) operations. In one example, a system comprises an array of non-volatile memory cells arranged into rows and columns; and a plurality of sets of output lines, where each column contains a set of output lines; wherein each row is coupled to only one output line in the set of output lines for each column.
G11C 7/12 - Circuits de commande de lignes de bits, p.ex. circuits d'attaque, de puissance, de tirage vers le haut, d'abaissement, circuits de précharge, circuits d'égalisation, pour lignes de bits
67.
PARALLELED TRANSISTOR CELLS OF POWER SEMICONDUCTOR DEVICES
An apparatus is disclosed that includes a common drain, a common source, and a common gate, respectively, of the power semiconductor device, and paralleled transistor cells of the power semiconductor device. In various examples, a configuration of a gate structure of a first respective transistor cell coupled with the common gate is different than a configuration of a gate structure of a second respective transistor cell coupled with the common gate. Alternatively or additionally, in various examples, a configuration of a structure coupled between a first portion of the paralleled transistor cells and the common gate is different than a configuration of a structure coupled between the second portion of the paralleled transistor cells and the common gate.
H03K 3/012 - Modifications du générateur pour améliorer le temps de réponse ou pour diminuer la consommation d'énergie
H01L 29/16 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, mis à part les matériaux de dopage ou autres impuretés, seulement des éléments du groupe IV de la classification périodique, sous forme non combinée
H01L 29/06 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
68.
NEURAL NETWORK CLASSIFIER USING ARRAY OF THREE-GATE NON-VOLATILE MEMORY CELLS
A neural network device with synapses having memory cells each having a floating gate and a first gate over first and second portions of a channel region disposed between source and drain regions, and a second gate over the floating gate or the source region. First lines each electrically connect the first gates in one of the memory cell rows, second lines each electrically connect the second gates in one of the memory cell rows, third lines each electrically connect the source regions in one of the memory cell columns, and fourth lines each electrically connect the drain regions in one of the memory cell columns. The synapses receive a first plurality of inputs as electrical voltages on the first or second lines, and provide a first plurality of outputs as electrical currents on the third or fourth lines.
G11C 11/54 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliers; Eléments d'emmagasinage correspondants utilisant des éléments simulateurs de cellules biologiques, p.ex. neurone
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
G11C 16/14 - Circuits pour effacer électriquement, p.ex. circuits de commutation de la tension d'effacement
H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
G11C 16/10 - Circuits de programmation ou d'entrée de données
G11C 16/04 - Mémoires mortes programmables effaçables programmables électriquement utilisant des transistors à seuil variable, p.ex. FAMOS
An apparatus and method including a command input to receive a command with a macro identifier from a channel processor, a macro memory storing a plurality of flash control commands, each comprising a corresponding duration and a corresponding plurality of target control values to control a flash target; and a second finite state machine comprising a plurality of control outputs each corresponding to control inputs on the flash target, wherein in response to a received command, the first finite state machine locates in the macro memory a sequence of flash control commands associated with the macro identifier and sequentially outputs the flash control commands to the second finite state machine; and wherein the second finite state machine drives each of the plurality of control outputs based on corresponding values in the first flash control command for the duration specified in the current flash control command.
An electronic device includes a transaction host, first and second peripherals, memory, an access control register, and first and second access controllers. The memory stores access control identifier management instructions, a first task related to the first peripheral, and a first bitmask indicating respective access settings for the first and second peripherals for performing the first task. The access control register includes a first access control identifier for the first peripheral and a second access control identifier for the second peripheral. The transaction host executes the access control identifier management instructions to program the first and second access control identifiers based on the first bitmask, and subsequently executes the first task. The first and second access controllers control access to the first and second peripherals, respectively, based on the respective first and second access control identifiers programmed based on the first bitmask.
G06F 21/85 - Protection des dispositifs de saisie, d’affichage de données ou d’interconnexion dispositifs d’interconnexion, p.ex. les dispositifs connectés à un bus ou les dispositifs en ligne
71.
ELECTRONIC DEVICE INCLUDING ACCESS CONTROL IDENTIFIERS FOR CONTROLLING ACCESS TO PERIPHERALS
An electronic device includes a transaction host, a first peripheral, a second peripheral, a first access controller connected to the first peripheral, a second access controller connected to the second peripheral, and an access control register storing a first access control identifier for the first peripheral and a second access control identifier for the second peripheral. The first access controller to receive an access request for access to the first peripheral by the transaction host, perform an access determination for the first peripheral based at least on the first access control identifier for the first peripheral, and allow or prevent the transaction host access to the first peripheral based on the access determination.
An apparatus and method including a command input to receive a command with a macro identifier from a channel processor, a macro memory storing a plurality of flash control commands, each comprising a duration and a plurality of target control values to control a flash target; and a second finite state machine comprising a plurality of control outputs each corresponding control inputs on the flash target, wherein in response to a received command, the first finite state machine locates in the macro memory a sequence of flash control commands associated with the macro identifier and sequentially outputs the flash control commands to the second finite state machine; and wherein the second finite state machine drives each of the plurality of control outputs based on corresponding values in the first flash control command for the duration specified in the current flash control command.
Some examples may relate to an object-recognition system. The object-recognition system may generate an object identifier when an object having detectable elements in a predetermined spatial pattern is in proximity to a capacitive sensor. The object-recognition system may include a capacitive sensor and a reader to capture channel-capacitance measurements at least partially responsive to the capacitive sensor in proximity of the detectable elements. The object-recognition system may include a recognizer to generate an object identifier at least partially responsive the captured channel-capacitance measurements.
G06F 3/044 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction par des moyens capacitifs
H04L 9/32 - Dispositions pour les communications secrètes ou protégées; Protocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système
G06F 3/041 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction
74.
METAL-INSULATOR-METAL (MIM) CAPACITOR INCLUDING AN INSULATOR CUP AND LATERALLY-EXTENDING INSULATOR FLANGE
A metal-insulator-metal (MIM) capacitor includes a bottom electrode cup, an insulator, and a top electrode. The bottom electrode cup includes a laterally-extending bottom electrode cup base and a bottom electrode cup sidewall extending upwardly from the laterally-extending bottom electrode cup base. The insulator includes an insulator cup formed in an opening defined by the bottom electrode cup, and an insulator flange extending laterally outwardly from the insulator cup sidewall and extending laterally over an upper surface of the bottom electrode cup sidewall. The top electrode is formed in an opening defined by the insulator cup. The top electrode is insulated from the upper surface of the bottom electrode cup sidewall by the insulator flange.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 49/02 - Dispositifs à film mince ou à film épais
75.
METAL-INSULATOR-METAL (MIM) CAPACITOR MODULE INCLUDING A CUP-SHAPED STRUCTURE WITH A ROUNDED CORNER REGION
A metal-insulator-metal (MIM) capacitor includes a bottom electrode cup, an insulator, and a top electrode. The bottom electrode cup includes a laterally-extending bottom electrode cup base and a bottom electrode cup sidewall extending upwardly from the laterally-extending bottom electrode cup base. The insulator includes an insulator cup formed in an opening defined by the bottom electrode cup, and a rounded insulator flange extending laterally outwardly and curving upwardly from the insulator cup, the rounded insulator flange covering an upper surface of the bottom electrode cup sidewall. The top electrode is formed in an opening defined by the insulator cup. The top electrode is insulated from the upper surface of the bottom electrode cup sidewall by the rounded insulator flange.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 49/02 - Dispositifs à film mince ou à film épais
76.
ELECTRONIC DEVICE INCLUDING ACCESS CONTROL IDENTIFIERS FOR CONTROLLING ACCESS TO PERIPHERALS
G06F 21/85 - Protection des dispositifs de saisie, d’affichage de données ou d’interconnexion dispositifs d’interconnexion, p.ex. les dispositifs connectés à un bus ou les dispositifs en ligne
77.
METAL-INSULATOR-METAL (MIM) CAPACITOR MODULE INCLUDING A CUP-SHAPED STRUCTURE WITH A ROUNDED CORNER REGION
A metal-insulator-metal (MIM) capacitor includes a bottom electrode cup, an insulator, and a top electrode. The bottom electrode cup includes a laterally-extending bottom electrode cup base and a bottom electrode cup sidewall extending upwardly from the laterally-extending bottom electrode cup base. The insulator includes an insulator cup formed in an opening defined by the bottom electrode cup, and a rounded insulator flange extending laterally outwardly and curving upwardly from the insulator cup, the rounded insulator flange covering an upper surface of the bottom electrode cup sidewall. The top electrode is formed in an opening defined by the insulator cup. The top electrode is insulated from the upper surface of the bottom electrode cup sidewall by the rounded insulator flange.
H01L 49/02 - Dispositifs à film mince ou à film épais
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
Examples may include an apparatus including a circuit coupled between a supply line, a return line, and a terminal. The circuit may provide an oscillating signal to the terminal. The circuit may include a first switch to couple the supply line with the terminal. The circuit may also include a second switch to couple the return line with the terminal. The circuit may also include a first inductor coupled between the first switch and the terminal. The circuit may also include a second inductor coupled between the second switch and the terminal. The circuit may also include a first diode coupled between the return line and an internal node of the first switch and the first inductor. The circuit may also include a second diode coupled between the supply line and an internal node of the second switch and the second inductor. Related systems and methods are also disclosed.
H02P 27/08 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs avec modulation de largeur d'impulsions
H02M 1/12 - Dispositions de réduction des harmoniques d'une entrée ou d'une sortie en courant alternatif
H02M 7/537 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p.ex. onduleurs à impulsions à un seul commutateur
79.
METAL-INSULATOR-METAL (MIM) CAPACITOR INCLUDING AN INSULATOR CUP AND LATERALLY-EXTENDING INSULATOR FLANGE
A metal-insulator-metal (MIM) capacitor includes a bottom electrode cup, an insulator, and a top electrode. The bottom electrode cup includes a laterally-extending bottom electrode cup base and a bottom electrode cup sidewall extending upwardly from the laterally-extending bottom electrode cup base. The insulator includes an insulator cup formed in an opening defined by the bottom electrode cup, and an insulator flange extending laterally outwardly from the insulator cup sidewall and extending laterally over an upper surface of the bottom electrode cup sidewall. The top electrode is formed in an opening defined by the insulator cup. The top electrode is insulated from the upper surface of the bottom electrode cup sidewall by the insulator flange.
H01L 49/02 - Dispositifs à film mince ou à film épais
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
Examples may include an apparatus including a circuit coupled between a supply line, a return line, and a terminal. The circuit may provide an oscillating signal to the terminal. The circuit may include a first switch to couple the supply line with the terminal. The circuit may also include a second switch to couple the return line with the terminal. The circuit may also include a first inductor coupled between the first switch and the terminal. The circuit may also include a second inductor coupled between the second switch and the terminal. The circuit may also include a first diode coupled between the return line and an internal node of the first switch and the first inductor. The circuit may also include a second diode coupled between the supply line and an internal node of the second switch and the second inductor. Related systems and methods are also disclosed.
H02P 27/06 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p.ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs
H02M 7/537 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p.ex. onduleurs à impulsions à un seul commutateur
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
81.
CIRCUITRY FOR AUTONOMOUSLY MEASURING ANALOG SIGNALS AND RELATED SYSTEMS, METHODS, AND DEVICES
Analog signal measurement and related apparatus, systems, and methods are disclosed. Such an apparatus may include a signal analyzing circuitry to enable responsive to the assertion of the first enable signal, compare the amplified analog input signal to one or more threshold values responsive to the assertion of the second enable signal, and generate an alert signal responsive to a determination that the amplified analog input signal falls outside of the one or more threshold values.
One or more examples relate to a knob-on-display. An apparatus of such a knob-on-display includes a touch surface, a dome switch pad, a dome switch, a rotation electrode pad, and an electrically conductive structure. The touch surface may include an electrically conductive material, the touch surface movable to a released position and to a depressed position. The dome switch may include an electrically conductive material. The dome switch may be physically mounted to and electrically connected to the dome switch pad. The rotation electrode pad may be in engagement proximity to a touch sensor of a touch screen device in both the released position and the depressed position. The electrically conductive structure may be physically and electrically connected to the dome switch pad and the rotation electrode pad, the electrically conductive structure defining a continuous electrically conductive path from the rotation electrode pad, through the dome switch, to the electrically conductive material of the touch surface in both the released position and the depressed position.
G06F 1/16 - TRAITEMENT ÉLECTRIQUE DE DONNÉES NUMÉRIQUES - Détails non couverts par les groupes et - Détails ou dispositions de structure
G05G 9/047 - Mécanismes de commande manuelle équipés d'un seul organe de commande travaillant avec plusieurs organes commandés, p.ex. en sélection ou simultanément l'organe de commande étant manœuvré de différentes manières indépendantes, chacune de ces manœuvres individuelles entraînant un seul organe commandé dans lesquels la manœuvre de l'organe de commande peut être effectuée de plusieurs manières simultanément l'organe de commande étant manœuvré à la main autour d'axes orthogonaux, p.ex. manches à balai
G06F 3/0354 - Dispositifs de pointage déplacés ou positionnés par l'utilisateur; Leurs accessoires avec détection des mouvements relatifs en deux dimensions [2D] entre le dispositif de pointage ou une partie agissante dudit dispositif, et un plan ou une surface, p.ex. souris 2D, boules traçantes, crayons ou palets
G06F 3/0362 - Dispositifs de pointage déplacés ou positionnés par l'utilisateur; Leurs accessoires avec détection des translations ou des rotations unidimensionnelles [1D] d’une partie agissante du dispositif de pointage, p.ex. molettes de défilement, curseurs, boutons, rouleaux ou bandes
G06F 3/041 - Numériseurs, p.ex. pour des écrans ou des pavés tactiles, caractérisés par les moyens de transduction
83.
VERIFICATION OF OFF-CHIP COMPUTER-READABLE INSTRUCTIONS AND RELATED SYSTEMS, METHODS, AND APPARATUSES
An apparatus may comprise an off-chip data storage device and a semiconductor device package including processing circuitry and an on-chip memory device, the off-chip data storage device including master data and portions of the computer-readable instructions. The processing circuitry may retrieve a master data that includes a digital signature that may be used to verify the master data and a hash table that may include hash information for others of the portions. The processing circuitry may also verify the master instructions responsive to the digital signature, retrieve a portion, calculate a hash value of the retrieved portion, and determine whether the calculated hash value correlates to hash information of the hash table.
G06F 21/79 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du stockage de données dans les supports de stockage à semi-conducteurs, p.ex. les mémoires adressables directement
G06F 21/54 - Contrôle des usagers, programmes ou dispositifs de préservation de l’intégrité des plates-formes, p.ex. des processeurs, des micrologiciels ou des systèmes d’exploitation au stade de l’exécution du programme, p.ex. intégrité de la pile, débordement de tampon ou prévention d'effacement involontaire de données par ajout de routines ou d’objets de sécurité aux programmes
G06F 21/57 - Certification ou préservation de plates-formes informatiques fiables, p.ex. démarrages ou arrêts sécurisés, suivis de version, contrôles de logiciel système, mises à jour sécurisées ou évaluation de vulnérabilité
84.
SYSTEMS AND METHODS FOR MANAGING INTERRUPT PRIORITY LEVELS
G06F 9/48 - Lancement de programmes; Commutation de programmes, p.ex. par interruption
G06F 13/26 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus d'entrée/sortie utilisant l'interruption avec commande prioritaire
85.
VERIFICATION OF OFF-CHIP COMPUTER-READABLE INSTRUCTIONS AND RELATED SYSTEMS, METHODS, AND APPARATUSES
An apparatus may comprise an off-chip data storage device and a semiconductor device package including processing circuitry and an on-chip memory device, the off-chip data storage device including master data and portions of the computer-readable instructions. The processing circuitry may retrieve a master data that includes a digital signature that may be used to verify the master data and a hash table that may include hash information for others of the portions. The processing circuitry may also verify the master instructions responsive to the digital signature, retrieve a portion, calculate a hash value of the retrieved portion, and determine whether the calculated hash value correlates to hash information of the hash table.
A method of forming memory cells, high voltage devices and logic devices on fins of a semiconductor substrate's upper surface, and the resulting memory device formed thereby. The memory cells are formed on a pair of the fins, where the floating gate is disposed between the pair of fins, the word line gate wraps around the pair of fins, the control gate is disposed over the floating gate, and the erase gate is disposed over the pair of fins and partially over the floating gate. The high voltage devices include HV gates that wrap around respective fins, and the logic devices include logic gates that are metal and wrap around respective fins.
H10B 41/42 - Fabrication simultanée de périphérie et de cellules de mémoire
H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
H10B 41/30 - Dispositifs de mémoire morte reprogrammable électriquement [EEPROM] comprenant des grilles flottantes caractérisés par la région noyau de mémoire
A computer system includes a non-transitory computer-readable memory to store (a) a vector table including an exception vector pointing to an exception handler and (b) a vector fail address of a vector fetch bus error handler, and a processor to identify an exception, initiate an exception vector fetch in response to the identified exception to read the exception vector from the vector table, identify a vector fetch bus error associated with the exception vector fetch, access the vector fail address of the vector fetch bus error handler in response to the vector fetch bus error, and execute the vector fetch bus error handler.
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p.ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p.ex. contrôle de parité, exclusion des 9 ou des 11
An article of manufacture includes a non-transitory machine-readable medium. The medium includes instructions that cause a processor to execute a shift instruction. The shift instruction is to cause a source data in memory to be shifted left or shifted right. The shift instruction is to include a source parameter and a bit size parameter. The processor is to execute the shift instruction through a shift of a first source word of the source data by the bit size parameter to yield a first intermediate word, a shift of a second source word of the source data by the bit size parameter to yield a second intermediate word and a first set of shifted-out bits, and through execution of a logical OR operation on the first intermediate word and the first set of shifted-out bits to yield a first result word.
An article of manufacture includes a non-transitory machine-readable medium. The medium includes instructions. The instructions, when read and executed by a processor, cause the processor to determine that a first input instruction in a code stream to be executed is to perform a read-modify-write operation, determine that the first input instruction is to target a memory location, and, based on a determination that the first input instruction is to perform the read-modify-write operation and the determination that the first input instruction is to target the memory location, convert the first input instruction to a second input instruction to target the memory location with a mask to cause an atomic operation to implement the read-modify-write operation.
A computer system includes a non-transitory computer-readable memory to store (a) a vector table including an exception vector pointing to an exception handler and (b) a vector fail address of a vector fetch bus error handler, and a processor to identify an exception, initiate an exception vector fetch in response to the identified exception to read the exception vector from the vector table, identify a vector fetch bus error associated with the exception vector fetch, access the vector fail address of the vector fetch bus error handler in response to the vector fetch bus error, and execute the vector fetch bus error handler.
One or more examples relate, generally, to an apparatus. The apparatus includes a charged particle source and a charged particle pointer. The charged particle pointer urges charged particles emitted by the charged particle source in a predetermined direction. The charged particle pointer comprises a repeller, and an isolator positioned along a path extending from the repeller in the predetermined direction.
Various embodiments are disclosed for performing address fault detection in a memory system using a hierarchical ROM encoding system. In one embodiment, a hierarchical ROM encoding system comprises two levels of ROM encoders that are used to detect an address fault. In another embodiment, a hierarchical ROM encoding system comprises three levels of ROM encoders that are used to detect an address fault.
One or more examples relate, generally, to an apparatus. The apparatus includes a charged particle source and a charged particle pointer. The charged particle pointer urges charged particles emitted by the charged particle source in a predetermined direction. The charged particle pointer comprises a repeller, and an isolator positioned along a path extending from the repeller in the predetermined direction.
A system includes non-transitory computer readable memory and a processor. The non-transitory computer readable memory stores a current processor interrupt priority level and a current disable interrupt control (DISICTL) interrupt priority level. The processor to update the current processor interrupt priority level based on respective interrupt priority levels associated with respective exceptions, and update the current DISICTL interrupt priority level based on a respective DISICTL instruction, wherein the respective DISICTL instruction specifies a respective user-definable DISICTL interrupt priority level. The processor determines a highest interrupt priority level between the current processor interrupt priority level and the current DISICTL interrupt priority level, and apply the highest interrupt priority level during execution of respective code.
One or more examples relate to an apparatus includes an error detector, an oscillator, an analog proportional path, and a digital integral path. The oscillator includes an analog proportional input, a digital integral input, and an analog integral input. The analog proportional path to provide a control signal for the analog proportional input of the oscillator. The digital integral path to provide a control for the digital integral input and the analog integral input of the oscillator. A first signal path of an interface includes a direct coupling between the digital phase detector and integrator and the digital integral input of the oscillator. A second signal path of the interface includes a digital-to-analog converter (DAC) with a filtered delta-sigma modulator (DSM) input between the digital phase detector and integrator and the analog integral input of the oscillator.
H03L 7/099 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
H03L 7/091 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence y compris le filtrage ou l'amplification de son signal de sortie le détecteur de phase ou de fréquence utilisant un dispositif d'échantillonnage
An article of manufacture includes a non-transitory machine-readable medium. The medium includes instructions that cause a processor to execute a shift instruction. The shift instruction is to cause a source data in memory to be shifted left or shifted right. The shift instruction is to include a source parameter and a bit size parameter. The processor is to execute the shift instruction through a shift of a first source word of the source data by the bit size parameter to yield a first intermediate word, a shift of a second source word of the source data by the bit size parameter to yield a second intermediate word and a first set of shifted-out bits, and through execution of a logical OR operation on the first intermediate word and the first set of shifted-out bits to yield a first result word.
An article of manufacture includes a non-transitory machine-readable medium. The medium includes instructions that cause a processor to execute a shift instruction. The shift instruction is to cause a source data in memory to be shifted left or shifted right. The shift instruction is to include a source parameter and a bit size parameter. The processor is to execute the shift instruction through a shift of a first source word of the source data by the bit size parameter to yield a first intermediate word, a shift of a second source word of the source data by the bit size parameter to yield a second intermediate word and a first set of shifted-out bits, and through execution of a logical OR operation on the first intermediate word and the first set of shifted-out bits to yield a first result word.
An article of manufacture includes a non-transitory machine-readable medium. The medium includes instructions. The instructions, when read and executed by a processor, cause the processor to determine that a first input instruction in a code stream to be executed is to perform a read-modify-write operation, determine that the first input instruction is to target a memory location, and, based on a determination that the first input instruction is to perform the read-modify-write operation and the determination that the first input instruction is to target the memory location, convert the first input instruction to a second input instruction to target the memory location with a mask to cause an atomic operation to implement the read-modify-write operation.
One or more examples relate to an apparatus includes an error detector, an oscillator, an analog proportional path, and a digital integral path. The oscillator includes an analog proportional input, a digital integral input, and an analog integral input. The analog proportional path to provide a control signal for the analog proportional input of the oscillator. The digital integral path to provide a control for the digital integral input and the analog integral input of the oscillator. A first signal path of an interface includes a direct coupling between the digital phase detector and integrator and the digital integral input of the oscillator. A second signal path of the interface includes a digital-to-analog converter (DAC) with a filtered delta-sigma modulator (DSM) input between the digital phase detector and integrator and the analog integral input of the oscillator
H03L 7/093 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'agencement de détection de phase ou de fréquence y compris le filtrage ou l'amplification de son signal de sortie utilisant des caractéristiques de filtrage ou d'amplification particulières dans la boucle
H03L 7/099 - Commande automatique de fréquence ou de phase; Synchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
100.
Hierarchical ROM Encoder System For Performing Address Fault Detection In A Memory System
Various embodiments are disclosed for performing address fault detection in a memory system using a hierarchical ROM encoding system. In one embodiment, a hierarchical ROM encoding system comprises two levels of ROM encoders that are used to detect an address fault. In another embodiment, a hierarchical ROM encoding system comprises three levels of ROM encoders that are used to detect an address fault.
