Van Den Einden, Wilhelmus Theodorus Anthonius Johannes
Van Der Woord, Ties Wouter
Wondergem, Hendrikus Jan
Zdravkov, Aleksandar Nikolov
Abrégé
A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.
G03F 1/64 - Pellicules, p.ex. assemblage de pellicules ayant une membrane sur un cadre de support; Leur préparation caractérisés par les cadres, p.ex. du point de vue de leur structure ou de leur matériau
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
2.
METHODS AND COMPUTER PROGRAMS FOR DATA MAPPING FOR LOW DIMENSIONAL DATA ANALYSIS
Methods, systems, and apparatus for mapping high dimensional data related to a lithographic apparatus, etch tool, metrology tool or inspection tool to a lower dimensional representation of the data. High dimensional data is obtained related to the apparatus. The high dimensional data has first dimensions N greater than two. A nonlinear parametric model is obtained, which has been trained to map a training set of high dimensional data onto a lower dimensional representation. The lower dimensional representation has second dimensions M, wherein Mis less than N. The model has been trained using a cost function configured to make the mapping preserve local similarities in the training set of high dimensional data. Using the model, the obtained high dimensional data is mapped to the corresponding lower dimensional representation.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A method for operating a charged particle-optical apparatus, the method comprising: scanning, with the charged particle-optical apparatus, a sample comprising a series of locations with a charged particle beam, so as to generate scan data; changing a setting of at least one charged particle-optical parameter of the charged particle-optical apparatus from location to location, wherein the at least one charged particle-optical parameter affects a charged particle-optical grid distortion of the scan data; and compensating for the charged particle-optical grid distortion, based on the changed setting of the at least one charged particle-optical parameter.
A method for reducing sticking of an object to a surface used in a lithography process includes receiving, at a control computer, instructions for a tool configured to modify the surface and forming, in a deterministic manner based on the instructions received at the control computer, a modified surface having a furrow and a ridge, wherein the ridge reduces the sticking by reducing a contact surface area of the modified surface. Another apparatus includes a modified surface that includes furrows and ridges forming a reduced contact surface area to reduce a sticking of an object to the modified surface, the ridges having an elastic property that causes the reduced contact surface area to increase when the plurality of ridges is elastically deformed.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p.ex. mandrins, pièces de serrage, pinces
An inspection apparatus for adjusting a working height for a substrate for multiple target heights is disclosed. The inspection apparatus includes a radiation source configured to provide a radiation beam and a beam splitter configured to split the radiation beam into multiple beamlets that each reflect off a substrate. Each beamlet contains light of multiple wavelengths. The inspection apparatus includes multiple light reflecting components, wherein each light reflecting component is associated with one of the beamlets reflecting off the substrate and is configured to support a different target height for the substrate by detecting a height or a levelness of the substrate based on the beamlet reflecting off the substrate.
G01B 15/08 - Dispositions pour la mesure caractérisées par l'utilisation d'ondes électromagnétiques ou de radiations de particules, p.ex. par l'utilisation de micro-ondes, de rayons X, de rayons gamma ou d'électrons pour mesurer la rugosité ou l'irrégularité des surfaces
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériau; Moyens de réglage de diaphragmes ou de lentilles associées au support
A patterning device for a lithographic apparatus arranged to project a pattern from the patterning device onto a substrate, the patterning device comprising: an imaging area having opposing first sides extending parallel to a scanning direction of the lithographic apparatus and opposing second sides extending perpendicularly to the scanning direction, and at least one sensing mark located adjacent to at least one second side of the imaging area; wherein the at least one sensing mark is located a predetermined distance in the scanning direction away from the at least one second side of the imaging area and extends a width in the scanning direction such that the at least one sensing mark, when projected onto the substrate, fits within a scribe line on the substrate.
G03F 1/42 - Aspects liés à l'alignement ou au cadrage, p.ex. marquages d'alignement sur le substrat du masque
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p.ex. masques pour rayons X, masques en extrême ultra violet [EUV]; Leur préparation
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
Selecting an optimized, geometrically diverse subset of clips for a design layout for a semiconductor wafer is described. A complete representation of the design layout is received. A set of representative clips of the design layout is determined such that individual representative clips comprise different combinations of one or more unique patterns of the design layout. A subset of the representative clips is selected based on the one or more unique patterns. The subset of the representative clips is configured to include: (1) each geometrically unique pattern in a minimum number of representative clips; or (2) as many geometrically unique patterns of the design layout as possible in a maximum number of representative clips. The subset of representative clips is provided as training data for training an optical proximity correction or source mask optimization semiconductor process machine learning model, for example.
G06F 30/392 - Conception de plans ou d’agencements, p.ex. partitionnement ou positionnement
G06F 111/20 - CAO de configuration, p.ex. conception par assemblage ou positionnement de modules sélectionnés à partir de bibliothèques de modules préconçus
8.
PATTERN SELECTION FOR SOURCE MASK OPTIMIZATION AND TARGET OPTIMIZATION
Apparatuses, systems, and methods for selecting a subset of critical patterns from a plurality of patterns of a design layout. In some embodiments, the method includes accessing diffraction order data based on the plurality of patterns that represent features to be formed on at least a portion of a substrate, the diffraction order data including a plurality of peaks corresponding to the plurality of patterns. The method also includes identifying a subset of representative peaks from the plurality of peaks according to one or more grouping criteria, the identifying including identifying a first representative peak that covers another peak colinear with the first representative peak, wherein the first representative peak is a discrete peak having a frequency that is an integer multiple of frequency of another discrete peak. The method further includes selecting the subset of critical patterns corresponding to the subset of representative peaks.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 1/36 - Masques à correction d'effets de proximité; Leur préparation, p.ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
9.
METHOD FOR DETERMINING A STOCHASTIC METRIC RELATING TO A LITHOGRAPHIC PROCESS
A method of determining a stochastic metric, the method including: obtaining a trained model having been trained to correlate training optical metrology data to training stochastic metric data, wherein the training optical metrology data includes a plurality of measurement signals relating to distributions of an intensity related parameter across a zero or higher order of diffraction of radiation scattered from a plurality of training structures, and the training stochastic metric data includes stochastic metric values relating to the plurality of training structures, wherein the plurality of training structures have been formed with a variation in one or more dimensions on which the stochastic metric is dependent; obtaining optical metrology data including a distribution of the intensity related parameter across a zero or higher order of diffraction of radiation scattered from a structure; and using the trained model to infer a value of the stochastic metric from the optical metrology data.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A thermal conditioning unit to thermally condition a substrate, the thermal conditioning unit including: a top surface; a plurality of gas inlets and gas outlets provided in the top surface; a plurality of pressure valves connected to the plurality of gas inlets and gas outlets, wherein each of the plurality of pressure valves is configured to, during use, be connected to a pressure supply to generate a spatial pressure distribution across the top surface of the thermal conditioning unit; and a control device configured to control the plurality of pressure valves to generate, during use, the spatial pressure distribution, wherein the control device is configured to receive substrate shape data representing a shape of the substrate to be conditioned, and wherein the control device is configured to control the plurality of pressure valves to adapt the spatial pressure distribution based on the substrate shape data.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
11.
CONTEXT-BASED METROLOGY IMPUTATION FOR IMPROVED PERFORMANCE OF COMPUTATIONAL GUIDED SAMPLING
A method to identify a location on a wafer with a computational model to scan using an inspection tool is disclosed. More particularly, a method of correlating metrology data and context data to impute missing metrology data necessary to train as well as apply a computational model for guided inspection is disclosed. A computational probability prediction model is disclosed to generate defective die probability estimates with improved accuracy and versatility to guide different wafers for inspection.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
The invention relates to a method for evaluating measurement values (50) of at least one aberration of a projection lens (22) of a projection exposure system (10) for microlithography. The measurement values were determined at a plurality of field points (52) in a field plane of the projection lens, wherein the projection lens comprises a plurality of optical elements (E1-E4) for guiding an exposure radiation (14) and comprises a manipulator system (M1-M4) by means of which at least one of the optical elements can be manipulated in at least one degree of freedom (68) in order to move a rigid body. The method comprises the following steps: providing a fit function (62) which comprises a polynomial function (64) depending on two variables in the form of location coordinates defining a field plane and a further term (66), wherein the further term comprises rigid-body sensitivities (70) for a plurality of locations in the field plane which each describe a dependency of the at least one aberration (63) on a degree of freedom (68) at the relevant locations, said degree of freedom being able to be controlled by the manipulator system; and extrapolating the measurement values (50) determined at the plurality of field points (52) to further field points (56) of the projection lens by fitting the fit function to the determined measurement values.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
An apparatus includes: a vacuum sealing device chemically reactive to a target material in an environment, the vacuum sealing device fixed between a first fitting and a second fitting; and a protective device chemically non-reactive to the target material, the protective device positioned between the environment and the vacuum sealing device. When the apparatus is in a first mode of operation, the protective device defines one or more test pathways between the environment and the vacuum sealing device, the one or more test pathways including one or more through pathways within the protective device. When the apparatus is in a second mode of operation, the protective device blocks passage of target material from the environment to the vacuum sealing device.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p.ex. utilisant la génération d'un plasma
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 6/122 - Elements optiques de base, p.ex. voies de guidage de la lumière
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
15.
METHOD AND APPARATUS TO DETERMINE A PATTERNING PROCESS PARAMETER
A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A plate for use in an imaging system to determine at least two optical properties of an illumination beam of the imaging system, the imaging system configured to illuminate an illumination region with the illumination beam, the plate including a plurality of markers, wherein a first subset of the plurality of markers includes a first type of markers for determining a first optical property of the illumination beam, and a second subset of the plurality of markers includes a second type of markers for determining a second optical property of the illumination beam, wherein the plurality of markers are located within a marker region of the plate and the marker region generally corresponds to the illumination region.
Disclosed is a dark-field interferometric microscope and associated microscopy method. The microscope comprises an object branch being operable to propagate object radiation onto a sample and collect resultant scattered radiation from said sample and a reference branch being operable to propagate reference radiation. The object radiation and said reference radiation are mutually pointwise spatially coherent. A filter arrangement removes a zeroth order component from said scattered radiation to provide filtered scattered radiation; and a detection arrangement detects an interferometric image from interference of said filtered scattered radiation and reference radiation.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 21/10 - Condensateurs donnant un éclairage sur fond noir
Disclosed is an apparatus for and method of detecting a droplet of target material in a system for generating EUV radiation in which an illumination system is used to illuminate the droplet of a target material and a detector is arranged to detect radiation from the illumination system that has been forward or side scattered by the droplet of target material.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p.ex. utilisant la génération d'un plasma
A method of controlling an image positioning error in an optical system is described. The optical system comprises a first component, a second component and a third component arranged in an optical path of the optical system. The method comprises: - determining an image positioning error of the first component and feeding through of the image positioning error of the first component to a control loop of the second component to at least partly compensate the image positioning error of the first component; and - determining an image positioning error of the second component and feeding through of the image positioning error of the second component to a control loop of the third component to at least partly compensate the image positioning error of the second component.
The present disclosure provides a method of controlling a position of an optical element for projecting an image, the method comprising the steps of: - providing the optical element having at least one actuator to allow movement of the optical element in at least a first degree of freedom and at least a second degree of freedom; - determining a movement error of the optical element in at least the second degree of freedom; - correcting an image projection error caused by the movement error in the second degree of freedom using a movement of the optical element in the first degree of freedom.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/182 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour miroirs pour miroirs
21.
LITHOGRAPHIC APPARATUS WITH A FLUID HANDLING STRUCTURE
Disclosed herein is a lithographic apparatus comprising a fluid handling structure that is separated from a substrate and/or substrate support by a separation distance; a positioning device configured to move the substrate support and thereby the substrate; and a control system configured to control the positioning device so that the substrate support is moved along a route comprising one or more preparatory movements and one or more scanning movements; wherein: the control system is further configured to control the position of the fluid handling structure and/or substrate support so as to change the separation distance in dependence of whether a preparatory movement or a scanning movement is being performed; each preparatory movement is for moving the substrate to a position from which a new scanning movement may be started; and each scanning movement is for moving and/or positioning the substrate during one or more exposure processes.
An exposure apparatus comprises a first structure extending in a second direction and a first actuator to move the first structure in a first direction and a second structure extending in the first direction and a second actuator configured to move the second structure in the second direction, the second direction being substantially perpendicularly to the first direction. A first and a second substrate table are connected to the first and second structures. The first actuator is configured to rotate the first structure around a third direction to determine a rotation of the first substrate table around the third direction, the third direction being substantially perpendicular to the first and to the second direction. The second actuator is configured to rotate the second structure around the third direction to determine a rotation of the second substrate table around the third direction.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
09 - Appareils et instruments scientifiques et électriques
37 - Services de construction; extraction minière; installation et réparation
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Semiconductor manufacturing machines and semiconductor
machinery. Electronic imaging hardware and software in the field of
inspection of semiconductor materials, namely, semiconductor
wafers and reticles; computer hardware and software for
inspection of semiconductor materials, namely, semiconductor
wafers and reticles. Machinery maintenance and repair in the field of
semiconductor industry; installation of semiconductor
machines and semiconductor instruments and apparatus;
installation of machines, instruments and apparatus for the
manufacture of semiconductors. Technology supervision and inspection in the field of
quality control of semiconductor wafers and reticles.
25.
A POSITION MEASUREMENT SYSTEM, A POSITIONING SYSTEM, A LITHOGRAPHIC APPARATUS, AND A DEVICE MANUFACTURING METHOD
The invention provides a position measurement system to measure a position of an object in a movement direction relative to a reference, said position measurement system comprising: —a diffraction grating, and —an interferometer, wherein the interferometer is configured to direct a measurement beam to the diffraction grating in a measuring direction that is orthogonal to the movement direction of the object, and wherein the diffraction grating is oriented relative to the interferometer such that the measurement beam is substantially at a Littrow angle of the diffraction grating so that a diffracted beam to be received by the interferometer is substantially parallel to the measuring direction.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A vacuum system configured to provide a vacuum to a heat transfer fluid of a fluid-conditioned lithographic system element, the vacuum system comprising: a venturi, configured to generate a partial vacuum; and a buffer vessel, configured to contain a partial vacuum. The buffer vessel is in fluid communication with a constriction of the venturi, and the buffer vessel is further configured to be in fluid communication with a heat transfer fluid of a fluid-conditioned lithographic system element.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
27.
METROLOGY METHOD AND APPARATUS AND COMPUTER PROGRAM BACKGROUND
Disclosed is a method of metrology, comprising: obtaining metrology data relating to one or more targets on a substrate, the metrology data comprising intensity metric data relating to one or more intensity metrics, and phase difference metric data relating to a phase difference metric; determining intensity asymmetry metric data from said intensity metric data, said intensity asymmetry metric data describing, for each said intensity metric, an asymmetry in said intensity metric data between diffraction orders of a complementary pair of diffraction orders following diffraction by said one or more targets; obtaining one or more pre-calibrated asymmetry coefficients; and determining a value for a parameter of interest from said phase difference metric data, and said intensity asymmetry metric data as weighted by said pre-calibrated asymmetry coefficients.
An apparatus for determining one or more characteristics of an object for use in an EUV lithographic apparatus comprises: a support; a radiation system; a detector system; and a radiation adjustment module. The support is for supporting an object (for example, a pellicle, a reticle or a reticle and pellicle assembly). The radiation system is operable to produce and deliver a radiation beam so as to be incident on an object when supported by the support. The detector system is operable to receive radiation that has interacted with an object when supported by the support. The radiation adjustment module is operable to adjust one or more characteristics of the radiation beam delivered to the object or the radiation received by the detector system so as to allow characteristics of a plurality of different objects, each having different characteristics, to be determined, which may provide control over a EUV radiation dose.
Systems, apparatuses, and methods are provided for adjusting illumination slit uniformity in a lithographic apparatus. An example method can include determining whether an exposure field for a wafer exposure operation is less than a maximum exposure field of a uniformity correction system. In response to determining that the exposure field is less than the maximum exposure field, the example method can include modifying illumination slit uniformity calibration data associated with the maximum exposure field to generate modified illumination slit uniformity calibration data associated with the exposure field. Subsequently, the example method can include determining an optimal position of a finger assembly of the uniformity correction system based on the modified illumination slit uniformity calibration data.
Systems, apparatuses, and methods are provided for correcting an alignment measurement or overlay error. An example method can include measuring an observable in response to an illumination of a region of a surface by a radiation beam, such as interference between radiation diffracted from the region. The example method can further include generating a measurement signal indicative of the observable. In some aspects, the measurement signal can include interference fringe pattern data indicative of the measured interference. The example method can further include determining a correction to a measurement value based on measurement signal. Optionally, the correction can include a correction to an alignment measurement of an alignment sensor, a correction to an overlay error of an overlay sensor, or both.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
31.
METHODS, SOFTWARE, AND SYSTEMS FOR DETERMINATION OF CONSTANT-WIDTH SUB-RESOLUTION ASSIST FEATURES
Methods, software, and systems are disclosed for determining mask patterns. The determination can include obtaining a mask pattern including sub-resolution assist features (SRAFs) each having constant widths. The widths are set as continuous variables and so can be optimized along with other variables during a mask optimization process of the mask pattern. Based on their population and/or statistics, the optimized continuous widths are then discretized to a limited number of global width levels. Further mask optimization be performed with the SRAFs having discretized optimized global width levels, where the width assigned to an individual SRAF may be adjusted to a different level of the global width levels.
G03F 1/36 - Masques à correction d'effets de proximité; Leur préparation, p.ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
32.
BEAM MANIPULATOR IN CHARGED PARTICLE-BEAM APPARATUS
Disclosed herein is a manipulator or an array of manipulator. A manipulator manipulates a charged particle beam in a projection system. The manipulator comprising a substrate with major surfaces and a through-passage between associated apertures in the major surfaces. The through passage configured for passage of a path of a charged particle beam. An inner wall of the through-passage between the major surfaces comprises a plurality of electrodes configured to manipulate the charged particle beam. Each electrode comprises doped substrate. The through-passage comprises recesses that extend away from the path of the charged particle beam. Each recess defines a gap between the adjacent electrodes and further comprising an electrically insulating region between the adjacent electrodes. The recesses extend behind at least one of the adjacent electrodes relative to the path of the charged particle beam and comprising at least part of the electrically insulating region.
A method and apparatus for cleaning vacuum ultraviolet (VUV) optics (e.g., one or more mirrors of a VUV) of a substrate inspection system is disclosed. The cleaning system ionizes or disassociates hydrogen gas in a VUV optics environment to generate hydrogen radicals (e.g., H*) or ions (e.g., H+, H2+, H3+), which remove water or hydrocarbons from the surface of the one or more mirrors. The one or more VUV mirrors may include a reflective material, such as aluminum. The one or more VUV mirrors may have a protective coating to protect the reflective material from any detrimental reaction to the hydrogen radicals or ions. The protective coating may include a noble metal.
Corrections and/or other adjustments to an optical system of a lithography, metrology, and/or other apparatuses are typically based on information from a prior manufacturing and/or metrology operation, user experience with the lithography and/or metrology system and/or process, basic optical physics principles, and/or other information. Advantageously, the present systems and methods use 5 reinforcement learning to optimize the alignment of tens, hundreds, thousands, or millions of optical system components (along with associated settings and/or other characteristics), and make corrections and/or other adjustments that optimize adjustment and/or processing time, and/or costs.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 7/00 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques
G02B 27/62 - Appareils optiques spécialement adaptés pour régler des éléments optiques pendant l'assemblage de systèmes optiques
TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING GMBH (Allemagne)
Inventeur(s)
Janssen, Toni, Wil, Mathijs
Alvarez Alonso, Diego, Alejandro
Schweikert, Sven
Abrégé
An optical amplifier comprises: an amplification chamber; a first pump; a first heat exchanger; a second pump; and a new catalyst module. The amplification chamber is configured to receive a laser beam and output an amplified laser beam. The first pump is configured to pump a gain medium around a gain medium system. The second pump is configured to pump a cooling fluid through the first heat exchanger. The first heat exchanger is arranged to transfer heat from the gain medium to a cooling fluid after the gain medium has passed through the amplification chamber. The new catalyst module comprises: a body and a catalyst disposed within the body. The body forms part of the gain medium system and is disposed downstream of the amplification chamber and upstream of the first heat exchanger. In use, the gain medium is adjacent to, or in contact with, the catalyst.
H01S 3/03 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet - Détails de structure des tubes laser à décharge dans le gaz
H01S 3/04 - Dispositions pour la gestion thermique
H01S 3/036 - Moyens pour obtenir ou maintenir la pression désirée du gaz à l'intérieur du tube, p.ex. au moyen d'un getter ou d'une réactivation; Moyens pour faire circuler le gaz, p.ex. pour uniformiser la pression à l'intérieur du tube
H01S 3/041 - Dispositions pour la gestion thermique pour des lasers à gaz
H01S 3/104 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p.ex. commutation, ouverture de porte, modulation ou démodulation par commande du milieu actif, p.ex. par commande des procédés ou des appareils pour l'excitation dans des lasers à gaz
H01S 3/223 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet caractérisés par le matériau utilisé comme milieu actif à gaz le gaz actif étant polyatomique, c. à d. contenant plusieurs atomes
36.
METHOD AND SYSTEM FOR SIMULATING OVERLAY CORRECTION INDUCED IMAGING IMPACT IN LITHOGRAPHY
Described herein is a method and system for obtaining fading data related to prescribed overlay correction performed by a lithographic apparatus during a lithography process. The lithography process may be simulated based on the fading data to predict imaging of patterns from the lithography process. The simulation predicts a set of patterning parameters that is indicative of imaging impact due to the overlay correction. Based on the predicted impact, the patterning parameters or the overlay correction terms may be adjusted to minimize the imaging impact prior to patterning the substrate.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A lithographic method comprises forming an image of a reticle on a substrate a plurality of times. Each such image formation process comprises: illuminating a first portion of a reticle and pellicle assembly with a radiation beam; and collecting radiation scattered by the reticle and projecting it onto a target region of a substrate using projection optics. The lithographic method further comprises periodically illuminating a second portion of the reticle and pellicle assembly with a radiation beam, the second portion of the reticle and pellicle assembly at least partially surrounding the first portion. Some pellicles are susceptible to hydrogen etching and such pellicles tend to fail in a region surrounding a central portion. Advantageously, by periodically illuminating a second portion of the reticle and pellicle assembly with a radiation beam, hydrogen etching of the second portion of the reticle and pellicle assembly can be suppressed.
Disclosed are non-transitory computer-readable media, systems, and computer-implemented methods that describe obtaining hot spot (HS) location information with respect to a printed pattern; obtaining LFP search criteria for searching the printed pattern to determine a local focus point (LFP) for an imaging device; selecting a HS area in the printed pattern that contains a HS; and determining the LFP proximate to the HS area based on the LFP search criteria, the LFP not containing the HS.
A modular autoencoder model is described. The modular autoencoder model comprises input models configured to process one or more inputs to a first level of dimensionality suitable for combination with other inputs: a common model configured to: reduce a dimensionality of combined processed inputs to generate low dimensional data in a latent space; and expand the low dimensional data in the latent space into one or more expanded versions of the one or more inputs suitable for generating one or more different outputs; output models configured to use the one or more expanded versions of the one or more inputs to generate the one or more different outputs, the one or more different outputs being approximations of the one or more inputs; and a prediction model configured to estimate one or more parameters based on the low dimensional data in the latent space.
A photonic crystal fiber (10) comprising a core region and a cladding region surrounding the core region. The core region and the cladding region comprise a material (12) having a first refractive index, the cladding region additionally comprising a plurality of microstructures (14) extending from an input end of the fiber along a longitudinal axis of the fiber to an output end of the fiber, the plurality of microstructures (14) having a second refractive index which less than the first refractive index. The plurality of microstructures in the cladding region are arranged in a cross-sectional pattern comprising at least one ring of microstructures surrounding the core region, wherein a diameter of the maximum extent of the core region is at least 16 µm, the photonic crystal fiber having a transmission bandwidth of 200 nm or more.
A method of evaluating the flatness of a substrate support, the method comprising: clamping a substrate having an upper surface and a lower surface to the substrate support such that the lower surface of the substrate is in contact with the substrate support; and performing interferometric measurement of the lower surface of the substrate using an interferometer.
G01B 5/00 - Dispositions pour la mesure caractérisées par l'utilisation de techniques mécaniques
G01B 9/02017 - Interféromètres caractérisés par la configuration du parcours du faisceau avec plusieurs interactions entre l’objet ciblé et les faisceaux lumineux, p.ex. les réflexions des faisceaux provenant de positions différentes
G01B 11/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la rugosité ou l'irrégularité des surfaces
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The present invention relates to a method for processing a substrate comprising: a) providing a substrate on a support; b) measuring a property of the substrate and/or of a rinsing liquid; c) controlling the addition of one or more additives to the rinsing liquid based on the measurement, to adjust the pH value and/or the conductivity of the rinsing liquid to a predetermined value; and d) providing the rinsing liquid to a first surface of the substrate via one or more nozzles. The present invention also relates to a system for processing a substrate and to a method for manufacturing a device.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
B08B 3/04 - Nettoyage impliquant le contact avec un liquide
G03F 1/00 - Originaux pour la production par voie photomécanique de surfaces texturées, p.ex. masques, photomasques ou réticules; Masques vierges ou pellicules à cet effet; Réceptacles spécialement adaptés à ces originaux; Leur préparation
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.
G05B 19/418 - Commande totale d'usine, c.à d. commande centralisée de plusieurs machines, p.ex. commande numérique directe ou distribuée (DNC), systèmes d'ateliers flexibles (FMS), systèmes de fabrication intégrés (IMS), productique (CIM)
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G05B 13/02 - Systèmes de commande adaptatifs, c. à d. systèmes se réglant eux-mêmes automatiquement pour obtenir un rendement optimal suivant un critère prédéterminé électriques
G06N 3/044 - Réseaux récurrents, p.ex. réseaux de Hopfield
44.
SYSTEMS AND METHODS OF CLEANING ELECTRON SOURCES IN CHARGED-PARTICLE BEAM SYSTEMS
Systems and methods of removing a contaminant from an emitter tip of an electron source in an electron beam apparatus are disclosed. An electron beam apparatus may include an electron source comprising an emitter tip configured to emit electrons and an optical source configured to generate an optical beam illuminating a portion of the emitter tip to excite a surface mode of the optical beam, wherein the excited surface mode facilitates removal of a contaminant from a surface of the illuminated portion of the emitter tip. The excited surface mode may comprise a propagating surface wave or a localized surface wave. The emitter tip may comprise a grating structure, wherein a characteristic of the grating structure matches a wavevector of the optical beam.
Disclosed is a metrology device operable to measure a sample with measurement radiation and associated method. The metrology device comprises: an illumination branch operable to propagate measurement radiation to a sample, a detection branch operable to propagate one or more components of scattered radiation, scattered from said sample as a result of illumination of the sample by said measurement radiation; and a dispersive arrangement in either of said illumination branch or said detection branch. The dispersive arrangement is arranged to maintain one or more components of said scattered radiation at substantially a same respective location in a detection pupil plane over a range of wavelength values for said measurement radiation.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A lithographic apparatus having an electrostatic clamp system comprising: a plurality of electrodes configured to exert an electrostatic clamping force on a component; a power source connected to the plurality of electrodes; and a controller configured to control the potential applied to the plurality of electrodes to alternate between a first mode and a second mode, in synchronism with the generation of pulses of radiation in the lithographic apparatus, wherein: in the first mode, the average potential of the plurality of electrodes is a first potential; and in the second mode, the average potential of the plurality of electrodes is a second potential; and the first potential is more positive than the second potential.
A method to generate an inspection tool sampling plan is disclosed. More, particularly, a method to generate an inspection tool sampling plan for more accurate die loss projection assuming non-uniform defect density or distribution on a wafer is disclosed. A method to optimize an inspection tool sampling plan is disclosed. More particularly, a method of optimizing a wafer region definition and sampling budget distribution for improved die loss projection without relying on pre-determined wafer region definition and sampling budget distribution variables is disclosed. A computational probability prediction model, sampling plan optimizer, and die loss projection formula are disclosed to project die loss with improved accuracy and versatility to guide different wafers for inspection.
Apparatuses and systems for stabilizing electron sources in charged particle beam inspection systems are provided. In some embodiments, a system may include an electron source comprising an emitting tip electrically connected to two electrodes and configured to emit an electron; and a base coupled to the emitting tip, wherein the base is configured to stabilize the emitting tip via the coupling.
A computer implemented method of determining a placement metric relating to placement of one or more features on a substrate in a lithographic process. The method includes obtaining setup data including placement error contributor data relating to a plurality of placement error contributor parameters and yield data representative of yield and defining a statistical model for predicting a yield metric, the statistical model being based on a placement metric, the placement metric being a function of the placement error contributor parameters, and associated model coefficients. The model coefficients are fitted based on the setup data, and the placement metric determined from the fitted model coefficients.
G06F 30/17 - Conception mécanique paramétrique ou variationnelle
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p.ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
A sensor system for measuring a shape of a substrate, the sensor system include: a substrate support to support a surface of the substrate; at least one sensor device, each sensor device including an optical emitter to emit radiation onto the surface of the substrate, and an optical receiver to receive the radiation reflected from the surface; and a controller. The controller is configured to: determine at least one measurement height of the surface of the substrate above each of the at least one sensor device, based on the received radiation; compensate for gravitational sag of the substrate relative to a calibration height; and determine the shape of the substrate based on a comparison of the calibration height and the at least one measurement height.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
G01B 11/245 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes en utilisant plusieurs transducteurs fixes fonctionnant simultanément
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
51.
AN OBJECT GRIPPER, A METHOD OF HOLDING AN OBJECT AND A LITHOGRAPHIC APPARATUS
A gripper for an object handler includes an engaging surface for engaging a surface of an object, and a first channel connected to a first outlet, the first outlet being configured to operate, during use, as a vacuum clamp arranged to secure the engaging surface to the surface of the object. The gripper further includes a second channel arranged to be connected to a pressure source, and at least one second outlet arranged adjacent to the engaging surface and connected to the second channel.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
B25J 15/06 - Têtes de préhension avec moyens de retenue magnétiques ou fonctionnant par succion
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
Disclosed is a method of metrology relating to measurement of a structure on a substrate, said structure being subject to process variation. The method comprises obtaining first measurement data relating to a phase of measurement radiation having been scattered from one or more marks, and relating to a plurality of measurement conditions; obtaining second measurement data relating to an intensity of said measurement radiation and relating to said plurality of measurement conditions; obtaining a weighting for said first measurement data and second measurement data, said weighting comprising a modulus component relating to a modulus of complex weights and an argument component relating to an argument of the complex weights; and determining a first parameter value for a first parameter from said first measurement data and said second measurement data, as weighted by said weighting.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
A patterning device (e.g., a reticle) is typically clamped to a chuck in a lithography apparatus by vacuum clamps to drive the patterning device in a scan direction. Acceleration of the patterning device for a scan often causes deformation of the patterning device in an corkscrew like and/or twisting shape. A new clamping system is described, which comprises a vacuum clamp configured to apply a clamping force to the patterning device, and an actuator configured to apply an actuation force to the patterning device to reduce or eliminate deformation (e.g., twist deformation) imparted to the patterning device during the acceleration. The actuator is configured to apply the actuation force responsive to the acceleration.
A charged-particle optical apparatus configured to project a multi-beam of charged particles, the apparatus comprising: a charged particle device switchable between (i) an operational configuration in which the device is configured to project the multi-beam to a sample along an operational beam path extending from a source of the multi-beam to the sample and (ii) a monitoring configuration in which the device is configured to project the multi-beam to a detector along a monitoring beam path extending from the source to the detector; wherein the monitoring beam path diverts from the inspection beam path part way along the operational beam path.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p.ex. implantation d'ions
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/244 - Détecteurs; Composants ou circuits associés
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
56.
METHOD OF GENERATING A SAMPLE MAP, COMPUTER PROGRAM PRODUCT, CHARGED PARTICLE INSPECTION SYSTEM, METHOD OF PROCESSING A SAMPLE, ASSESSMENT METHOD
Methods are disclosed for generating a sample map and processing a sample. In one arrangement, a method comprises measuring a position of a first mark in each of a plurality of field regions on sample. A first model is fitted to the measured positions of the first marks. The fitted first model represents positions of the field regions. The method comprises measuring positions of a plurality of second marks in one field region or in each of a plurality of field regions. A second model is fitted to the measured positions of the second marks. The fitted second model represents a shape of each field region. A sample map is output using the fitted first and second models.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p.ex. implantation d'ions
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
H01J 37/244 - Détecteurs; Composants ou circuits associés
H01J 37/26 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
57.
METHOD OF PROCESSING A SAMPLE, AND CHARGED PARTICLE ASSESSMENT SYSTEM
Methods of processing a sample and charged particle assessment systems are disclosed. In one arrangement, a sample is processed using a multi-beam of sub-beams of charged particles. At least a portion of a sub-beam processable area is processed with each sub-beam. The sub-beam processable area comprising an array of sections having rows of sections and columns of sections. Each row of sections defines an elongate region that is substantially equal to or smaller than a pitch at the sample surface of the sub-beams in the multi-beam. A plurality of the sections are processed.
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériau; Moyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/304 - Commande des tubes par une information en provenance des objets, p.ex. signaux de correction
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p.ex. implantation d'ions
58.
NOZZLE FOR PROVIDING A GAS FLOW AND METHOD OF MAKING THE NOZZLE
The present disclosure provides a nozzle for providing a gas outflow, the nozzle comprising: a main channel; the main channel opening into at least one flow restriction section at a downstream end of the main channel, each flow restriction section having a plurality of parallel vanes for creating a uniform gas flow; the at least one flow restriction section opening into a respective outflow section having an increasing cross-sectional area towards an open end thereof adapted to provide the gas outflow.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
59.
SILENCER FOR THERMAL CONDITIONING SYSTEM AND LITHOGRAPHIC APPARATUS
A silencer is configured to silence an acoustic wave in a thermal conditioning fluid in a thermal conditioning fluid duct and comprises an open inlet configured to be connected to the thermal conditioning fluid duct to be in fluid communication with the thermal conditioning fluid in the thermal conditioning fluid duct, a silencer housing comprising an inner cavity connected to the open inlet, a compliant member which divides the inner cavity into a thermal conditioning fluid cavity and a substantially closed gas cavity, wherein the thermal conditioning fluid cavity is connected to the inlet, an inlet duct configured to receive the thermal conditioning fluid, and an outlet duct wherein the silencer further comprises a plurality of parallel ducts each forming a fluid channel, the plurality of parallel ducts arranged in at least one of the inlet duct and the outlet duct.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
F01N 1/00 - Silencieux caractérisés par leur principe de fonctionnement
F16L 55/00 - Dispositifs ou accessoires à utiliser avec, ou en liaison avec, les tuyaux ou les systèmes de tuyaux
F16L 55/027 - Absorbeurs d'énergie; Absorbeurs de bruit Étranglements
Measuring overlay using a microscope based sensor is described. This provides the ability to measure alignment and overlay with a single system, among other advantages. The signal from the sensor is an intensity modulated fringe pattern (e.g., an interference pattern). The sensor is configured to generate the intensity modulated fringe pattern based on diffracted radiation received from a first metrology mark in a first layer of a patterned substrate and a second metrology mark in a second layer of the patterned substrate. The intensity modulated fringe pattern is filtered for an expected fringe period. An amplitude, phase, and/or other parameters of fringes of the filtered fringe pattern are used to determine an overlay value.
A silencer is configured to silence an acoustic wave in a thermal conditioning fluid at a target frequency. The silencer comprises an open inlet to be connected to a thermal conditioning fluid duct to be in fluid communication with the thermal conditioning fluid in the duct, a closed end to reflect the acoustic wave in the thermal conditioning fluid, and a silencer duct forming a thermal conditioning fluid passage therebetween. The silencer is configured to silence the acoustic wave. The silencer duct comprises a three dimensional shape configured to provide at least one revolution in the thermal conditioning fluid passage The silencer duct comprises a viscoelastic material.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
F16L 55/027 - Absorbeurs d'énergie; Absorbeurs de bruit Étranglements
The invention provides a coil to be fluid-cooled for use in electromagnetic actuators of lithography apparatuses, the coil comprising: - a coil, formed of a plurality of electrically-insulated flat wire coil conductors and configured to conduct an electric current to generate an electromagnetic field during use, and - at least one cooling fluid channel in heat-conducting contact with the coil, for guiding a flow of cooling fluid to withdraw heat from the coil, characterized in that, the cooling fluid channel is provided across the coil, crossing through multiple of the coil conductors.
H02K 3/24 - Enroulements caractérisés par la configuration, la forme ou le genre de construction du conducteur, p.ex. avec des conducteurs en barre avec des canaux ou des conduits pour un agent de refroidissement entre les conducteurs
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A method of assembling an EUV-transmissive barrier, the EUV-transmissive barrier comprising: a film assembly and a frame. The film assembly comprises a film under tensile stress and a border extending about the perimeter of the film. The method comprises: subjecting the border to a force and/orsubjecting the frame to a force, mating the border and the frame with glue being provided between the border and the frame, curing the glue, and relaxing the force or forces.
G03F 1/62 - Pellicules, p.ex. assemblage de pellicules ayant une membrane sur un cadre de support; Leur préparation
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
64.
A METHOD OF MONITORING A MEASUREMENT RECIPE AND ASSOCIATED METROLOGY METHODS AND APPARATUSES
Disclosed is a method of determining a reliability metric describing a reliability of metrology signal and/or a parameter of interest value derived therefrom and associated apparatuses. The method comprises obtaining a trained inference model for inferring a value for a parameter of interest from a measurement signal and one or more measurement signals and/or respective one or more values of a parameter of interest derived therefrom using said trained inference model. At least one reliability metric value is determined for the one or more measurement signals and/or respective one or more values of a parameter of interest, the reliability metric describing a reliability of one or more measurement signals and/or respective one or more values of a parameter of interest with respect to an accurate prediction space associated with the trained inference model.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
65.
APPARATUS AND METHOD FOR PREPARING AND CLEANING A COMPONENT
An apparatus for cleaning a component for use in a lithographic apparatus, the apparatus including at least one cleaning module or a plurality of cleaning modules, wherein the at least one cleaning module or the plurality of cleaning modules include a plurality of cleaning mechanisms, and wherein the plurality of cleaning mechanisms include: at least one preparing mechanism for reducing adhesion of the particles to the component and at least one removing mechanism for removing particles from the component, or a plurality of removing mechanisms for removing particles from the component.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 1/62 - Pellicules, p.ex. assemblage de pellicules ayant une membrane sur un cadre de support; Leur préparation
66.
DETECTOR INSPECTION DEVICE, DETECTOR ASSEMBLY, DETECTOR ARRAY, APPARATUS, AND METHOD
The embodiments of the present disclosure provides a detector inspection device for interrogating at least part of a detector comprised in a charged particle-optical assessment apparatus, the detector inspection device comprising: a coupler configured to be positioned proximate to a detector element of a detector; and a device controller configured to apply a stimulating signal to the coupler to stimulate a response signal in the detector for interrogating at least part of the detector.
There is provided a charged particle device for a charged particle inspection apparatus for projecting an array of sub-beams towards a sample, the charged particle device comprising: a charged particle optical element and a detector. The charged particle optical element has an up-beam surface having a plurality of openings to generate an array of sub-beams from a charged particle beam. In the charged particle optical element are defined: sub-beam apertures and monitoring apertures. The sub-beam aperture extend through the charged particle element for paths of the array of sub-beams towards a sample. The monitoring aperture extends through the charged particle element. The detector is in the monitoring aperture. At least part of the detector is down-beam of the up-beam surface. The detector measures a parameter of a portion of the charged particle beam incident on the detector.
Disclosed herein is a cover ring for use in a substrate support, the cover ring comprising: a flexible structure with an opening for receiving a substrate; an enclosed region within the cover ring; and a fluid conduit configured provide fluid to and/or receive fluid from the enclosed region; wherein the flexible structure is configured to change between a first state and a second state in response to a fluid flow into, or a fluid flow out of, the enclosed region; and in the first state the diameter of the opening is larger than in the second state.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p.ex. mandrins, pièces de serrage, pinces
69.
FLUID HANDLING SYSTEM AND METHOD, AND METHOD OF MANUFACTURING DEVICES
A fluid handling system for a lithographic system, comprising: a liquid supply configured to supply an immersion liquid to fill at least a portion of an immersion space between a substrate and a projection system of the lithographic system, wherein the projection system is configured project a patterned radiation beam onto the substrate; a gas supply configured to generate a gas jet for confining the immersion liquid within the immersion space, wherein the gas jet comprises a medium; and an evacuation system comprising an evacuation passage, wherein the evacuation system is configured to draw a two- phase fluid comprising the medium and the immersion liquid into the evacuation passage, and the two-phase fluid comprises a gas phase and a liquid phase; a recycling system configured to receive the two-phase fluid from the evacuation passage, and to extract the medium from the two-phase fluid as a product fluid for further use.
Disclosed is a method of predicting performance of a lithographic apparatus. The method comprises: providing calibration data relating to a plurality of fields that have been exposed by the lithographic apparatus on one or more substrates, wherein a field exposure time or a related parameter is varied for at least two said fields of said plurality of fields; generating a performance model based on the calibration data; and using the performance model to determine a set of parameter of interest data for a first plurality of product fields based at least upon field exposure time data describing field exposure times or a related parameter for said plurality of product fields.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
71.
METHOD AND SYSTEM FOR CONTEXT AWARE OVERLAY ADJUSTMENT
Described herein are systems and methods for determining overlay between features of a pattern. The method includes obtaining a representation of an image having multiple features. A context area of the image that does not contain any target features defined in a corresponding design layout is determined and an overlay of the features is determined based on a characteristic of the context area. The overlay is compared with an initial overlay determined using another process based on a non-context area of the image. The initial overlay is then adjusted or "fine-tuned" by adjusting parameters of the other process based on the comparison result.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
72.
SILENCER FOR THERMAL CONDITIONING SYSTEM AND LITHOGRAPHIC APPARATUS
A silencer is configured to silence an acoustic wave in a thermal conditioning fluid in a thermal conditioning fluid duct. The silencer comprises an open inlet configured to be connected to the thermal conditioning fluid duct to be in fluid communication with the thermal conditioning fluid, a silencer housing comprising an inner cavity connected to the open inlet, a compliant member arranged in the inner cavity, wherein the compliant member divides the inner cavity into a thermal conditioning fluid cavity and a gas cavity, wherein the thermal conditioning fluid cavity is connected to the open inlet and wherein the gas cavity forms a substantially closed space, wherein the gas cavity comprises a plurality of gas channels extending in a direction substantially perpendicular to a surface of the compliant member facing the gas cavity.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
F16L 55/04 - Dispositifs amortisseurs de vibrations ou de pulsations dans les fluides
F16L 55/027 - Absorbeurs d'énergie; Absorbeurs de bruit Étranglements
A charged particle assessment apparatus comprising: a charged particle beam device; an actuated sample stage; a hot component and a thermal compensator. The actuated sample stage is configured to hold a sample. The hot component is configured to operate such that, during operation, heat is radiated toward a sample held on the sample holder. The hot component is smaller than the sample. The thermal compensator is configured to heat the sample so as to reduce thermal gradients therein.
Systems and methods for detecting a defect on a sample include receiving a first image and a second image associated with the first image; determining, using a clustering technique, N first feature descriptor(s) for L first pixel(s) in the first image and M second feature descriptor(s) for L second pixel(s) in the second image, wherein each of the L first pixel(s) is co-located with one of the L second pixel(s), and L, M, and N are positive integers; determining K mapping probability between a first feature descriptor of the N first feature descriptor(s) and each of K second feature descriptor(s) of the M second feature descriptor(s), wherein K is a positive integer; and providing an output for determining whether there is existence of an abnormal pixel representing a candidate defect on the sample based on a determination that one of the K mapping probability does not exceed a threshold value.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
G06T 7/73 - Détermination de la position ou de l'orientation des objets ou des caméras utilisant des procédés basés sur les caractéristiques
77.
A METHOD FOR MODELING METROLOGY DATA OVER A SUBSTRATE AREA AND ASSOCIATED APPARATUSES
Disclosed is method for modeling metrology data over a substrate area relating to a substrate in a lithographic process. The method comprises obtaining first layer model data, said first layer model data relating to a first model fitted to first layer metrology data for exposure of a first layer on said substrate and second layer metrology data relating to a second layer on said substrate, said second layer being exposed subsequent to exposure of said first layer. Metrology content is subtracted from the second layer metrology data, said metrology content being obtained from said first layer model data or a component thereof and/or said first layer metrology data to obtain corrected second layer metrology data. A second model is fitted to said corrected second layer metrology data or a component thereof, said second model being different to said first model and an output model is determined from at least said second model, said output model being corrected for a model mismatch resultant from said first model and said second model.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
A substrate storage module for use as an integral part of a lithographic apparatus comprising a controllable environment for protecting a plurality of substrates from ambient air. The substrate storage module comprises a plurality of substrate supports for receiving the substrates, and a vacuum system fluidly coupled to the plurality of substrate supports. The vacuum system is configured to individually clamp and release the substrates.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
A lithographic apparatus that includes an illumination system, a patterning system, a projection system, and a reticle stage. The illumination system produces a beam of radiation. The patterning system imparts a pattern on the beam. The patterning system includes a reticle. The projection system projects the patterned beam on a substrate. The reticle stage includes a reticle clamp for supporting the reticle and a chuck for supporting the reticle clamp. The chuck includes a patterned internal structure. A portion of the patterned internal structure is an auxetic structure. The auxetic structure is thicker or thinner than other portions of the patterned internal structure.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
B29D 99/00 - Matière non prévue dans les autres groupes de la présente sous-classe
80.
GAS FLOW APPARATUS AND METHOD FOR EUV LIGHT SOURCE
A liner for a source vessel for extreme ultraviolet (EUV) light production includes a wall having an inner surface extending away from a collector end of the inner surface toward an intermediate focus end of the inner surface. The inner surface has an exhaust opening extending therethrough beginning at a distance D along the inner surface from the collector end toward the intermediate focus end and respective gas flow inlets disposed at respective locations, from near the collector end to near the distance D along the inner surface, wherein at least some of the gas flow inlets are configured to supply gas flow rates that vary with their respective location along the distance D to reduce deposition on the inner surface. A process or method of operating an EUV light source is also disclosed.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p.ex. utilisant la génération d'un plasma
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
81.
IMAGE DISTORTION CORRECTION IN CHARGED PARTICLE INSPECTION
An improved systems and methods for correcting distortion of an inspection image are disclosed. An improved method for correcting distortion of an inspection image comprises acquiring an inspection image, aligning a plurality of patches of the inspection image based on a reference image corresponding to the inspection image, evaluating, by a machine learning model, alignments between each patch of the plurality of patches and a corresponding patch of the reference image, determining local alignment results for the plurality of patches of the inspection image based on a reference image corresponding to the inspection image, determining an alignment model based on the local alignment results, and correcting a distortion of the inspection image based on the alignment model.
G06T 7/33 - Détermination des paramètres de transformation pour l'alignement des images, c. à d. recalage des images utilisant des procédés basés sur les caractéristiques
82.
LITHOGRAPHY SYSTEM, SUBSTRATE SAG COMPENSATOR, AND METHOD
A system includes a support table having one or more protrusions and a pressure device. The one or more protrusions contact and support a substrate such that the substrate is suspended with respect to the support table. Sagging of the substrate when supported by the support table is based on a material and/or dimensions of the substrate. The pressure adjusts a pressure on a side of the substrate such that the sagging is reduced.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
83.
CHARGED-PARTICLE APPARATUS, MULTI-DEVICE APPARATUS, METHOD OF USING CHARGED-PARTICLE APPARATUS AND CONTROL METHOD
A charged-particle apparatus generates a plurality of sub-beams from a source beam of charged particles and direct the sub-beams downbeam toward a sample position. The charged-particle apparatus comprises a charged particle source, an aperture array, and a charged particle optical component. The charged-particle source comprises an emitter to emit a source beam of charged particles along a divergent path. The aperture array is positioned in the divergent path so the aperture array generates sub-beams from the source beam. The charged-particle-optical component acts on the source beam upbeam of the aperture array. The charged-particle-optical component comprises a multipole and/or a charged-particle lens. The multipole operates on the source beam to vary the position of the divergent path at the aperture array. The multipole may vary a cross-sectional shape of the divergent path at the aperture array. The charged-particle-optical lens compensates for variations in distance between the emitter and the aperture array.
Systems and methods are disclosed for stabilizing an optical column. One system can include an optical column; a frame configured to support the optical column, the frame having a first coefficient of thermal expansion (CTE); and a subframe configured to be coupled to the optical column in at least two places by a first anchor and a second anchor to stabilize the optical column against a displacement or a rotation caused by thermal expansion in the frame or the optical column, the subframe having a second CTE lower than the first CTE.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
85.
METHOD AND APPARATUS FOR REPLACING GAS MIXTURE IN A GAS DISCHARGE CHAMBER
A method of replacing a gas mixture in a gas discharge chamber in a light source includes determining a performance of the light source and/or gas discharge chamber based on one or more light source and/or gas discharge chamber performance metrics, determining a next refill pressure based on the determined performance and a current operating pressure of the gas discharge chamber, removing the gas mixture from the gas discharge chamber; and filling the gas discharge chamber with a replacement gas mixture to the determined next refill pressure. An apparatus for replacing the gas mixture is also disclosed.
H01S 3/104 - Commande de l'intensité, de la fréquence, de la phase, de la polarisation ou de la direction du rayonnement, p.ex. commutation, ouverture de porte, modulation ou démodulation par commande du milieu actif, p.ex. par commande des procédés ou des appareils pour l'excitation dans des lasers à gaz
H01S 3/036 - Moyens pour obtenir ou maintenir la pression désirée du gaz à l'intérieur du tube, p.ex. au moyen d'un getter ou d'une réactivation; Moyens pour faire circuler le gaz, p.ex. pour uniformiser la pression à l'intérieur du tube
H01S 3/038 - Electrodes, p.ex. forme, configuration ou composition particulières
H01S 3/225 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet caractérisés par le matériau utilisé comme milieu actif à gaz le gaz actif étant polyatomique, c. à d. contenant plusieurs atomes comprenant un excimer ou un exciplex
H01S 3/23 - Agencement de plusieurs lasers non prévu dans les groupes , p.ex. agencement en série de deux milieux actifs séparés
86.
LASER CHAMBER HAVING DISCHARGE GAP WITH ACOUSTIC CONTROL
An apparatus for generating laser radiation from discharges in a gap, in a discharge chamber in which the discharges cause acoustic waves that reflect off of internal surfaces in the discharge chamber. The gap is angled with respect to the surfaces of structures in the chamber proximate to the gap so that acoustic waves reflected by those surfaces are less likely to reflect back to their origin and interfere with the operation of the laser especially at high repetition rates.
H01S 3/038 - Electrodes, p.ex. forme, configuration ou composition particulières
H01S 3/0971 - Procédés ou appareils pour l'excitation, p.ex. pompage par décharge dans le gaz d'un laser à gaz excité transversalement
H01S 3/225 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet caractérisés par le matériau utilisé comme milieu actif à gaz le gaz actif étant polyatomique, c. à d. contenant plusieurs atomes comprenant un excimer ou un exciplex
An apparatus for generating laser radiation from discharges in a discharge chamber in which the discharges produce acoustic waves which would disrupt operation of the apparatus at certain repetition rates if reflected back to their origin in which the surface of a preionizer tube positioned in the discharge chamber is provided with acoustic scattering features which scatter acoustic waves impinging on the preionizer tube surface. The preionizer tube may also be configured to have a transverse cross section that presents an angled surface to the region in which discharges are produced.
H01S 3/03 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet - Détails de structure des tubes laser à décharge dans le gaz
H01S 3/038 - Electrodes, p.ex. forme, configuration ou composition particulières
H01S 3/0971 - Procédés ou appareils pour l'excitation, p.ex. pompage par décharge dans le gaz d'un laser à gaz excité transversalement
H01S 3/036 - Moyens pour obtenir ou maintenir la pression désirée du gaz à l'intérieur du tube, p.ex. au moyen d'un getter ou d'une réactivation; Moyens pour faire circuler le gaz, p.ex. pour uniformiser la pression à l'intérieur du tube
H01S 3/225 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet caractérisés par le matériau utilisé comme milieu actif à gaz le gaz actif étant polyatomique, c. à d. contenant plusieurs atomes comprenant un excimer ou un exciplex
H01S 3/23 - Agencement de plusieurs lasers non prévu dans les groupes , p.ex. agencement en série de deux milieux actifs séparés
An electrical connector comprising a block of non-conductive flexible polymer, an electrical conductor which extends through the non-conductive flexible polymer from a first end to a second end of the non- conductive flexible polymer block, and a conductive flexible polymer sleeve which extends around a side of the non-conductive flexible polymer block.
H01R 12/91 - Dispositifs de couplage autorisant un mouvement relatif entre les pièces de couplage, p.ex. un flottement ou un auto-alignement
H01R 13/631 - Moyens additionnels pour faciliter l'engagement ou la séparation des pièces de couplage, p.ex. moyens pour aligner ou guider, leviers, pression de gaz pour l'engagement uniquement
H01R 13/6594 - Caractéristiques ou dispositions spécifiques de raccordement du blindage aux organes conducteurs le blindage étant monté sur une carte de circuits imprimés et raccordé à des organes conducteurs
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H01R 12/71 - Dispositifs de couplage pour circuits imprimés rigides ou structures similaires
Disclosed is a method for modeling measurement data over a substrate area and associated apparatus. The method comprises obtaining substrate measurement data describing spatial variation of a substrate parameter; and fitting a model to said substrate measurement data to obtain a fitted model; wherein said fitting step comprises regularizing the fitting using a plurality of regularization parameters, said plurality of regularization parameters having been individually optimized to penalize spatial components of said substrate measurement data in accordance with their effect on a parameter of interest.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
90.
GAS MIXTURE FOR HOLLOW CORE FIBER USED IN GENERATING BROADBAND RADIATION
A hollow core fiber and source assembly for broadband generation, wherein a hollow core of the hollow core fiber is filled with a gas composition comprising a working gas. The fiber is configured to receive pulsed pump radiation at an input end of the hollow core fiber, the pulsed pump power having a pulse power exceeding an ionization threshold of the gas composition. The fiber is configured to confine and guide the pulsed pump radiation through the fiber such that it interacts with the working gas for generating broadband radiation through nonlinear broadening of the pulsed pump radiation. The gas composition comprises a hydrogen component which is less than 1% of the total gas composition in the hollow core fiber.
The present disclosure relates to a charged particle-optical plate for a charged particle-optical device for projecting charged particle beams along beam paths to a sample location. The charged particle-optical plate comprises: a substrate having a crystalline structure with crystalline lines of symmetry; a plurality of channels configured for passage of a plurality of beam paths of a beam grid through the substrate; and a plurality of multipoles associated with respective channels, each multipole comprising a plurality of electrodes for the associated channel, wherein the electrodes are arranged such that geometrical lines of symmetry of the multipole are parallel to respective crystalline lines of symmetry of the crystalline structure.
A method of determining a substrate height measurement error, the method comprising providing a laser beam that is modulated at a given frequency, the laser beam having a wavelength and a polarization, directing the modulated laser beam onto the substrate at an acute angle relative to a normal extending from the substrate, detecting a position of the modulated laser beam after it has been reflected from the substrate, using detection based upon the frequency of the modulation applied to the laser beam to measure a modulation of the detected position of the modulated laser beam, and determining the height measurement error based upon the measured modulation of the detected position of the modulated laser beam, wherein the wavelength or the polarization is modulated.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
93.
A METHOD TO MONITOR THE CGI MODEL PERFORMANCE WITHOUT GROUND TRUTH INFORMATION
An apparatus to perform a method for detecting a change in computational model behavior is disclosed. The method comprises monitoring a contribution of a selected sample feature to a defective die probability evaluation over a time interval, determining whether the contribution of the selected sample feature exceeds a drift threshold in the time interval, and based on the determination that the drift threshold is exceeded, retraining the computational model.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
94.
ELECTROMAGNETIC MOTOR AND METHOD OF DETERMINING A POSITION DEPENDENT MOTOR CONSTANT FOR AN ELECTROMAGNETIC MOTOR
The invention provides a method of determining a position dependent motor constant of an electromagnetic motor, the electromagnetic motor comprising a magnet assembly and a coil assembly that are configured to displace relative to each other in a direction of movement, the method comprising: - causing a displacement of the magnet assembly relative to the coil assembly along a predetermined trajectory of interest in the direction of movement, at a substantially constant velocity; - applying a disturbance having a predetermined frequency to the electromagnetic motor, during the displacement of the magnet assembly relative to the coil assembly; - determining a position error of the magnet assembly relative to the coil assembly and an electromagnetic motor force, along the predetermined trajectory of interest; - determining a position dependent motor constant of the electromagnetic motor along the predetermined trajectory of interest, based on the determined position error and the electromagnetic motor force.
H02P 6/00 - Dispositions pour commander les moteurs synchrones ou les autres moteurs dynamo-électriques utilisant des commutateurs électroniques en fonction de la position du rotor; Commutateurs électroniques à cet effet
H02P 23/14 - Estimation ou adaptation des paramètres des moteurs, p.ex. constante de temps du rotor, flux, vitesse, courant ou tension
A charged particle-optical module for a charged particle-optical device configured to direct a charged particle beam along a beam path towards a sample location, the charged particle-optical module comprising: a stack comprising charged particle-optical plates arranged across the beam path and configured to operate on the charged particle beam; and a shield arrangement comprising an upbeam electrostatic shield arranged across the beam path upbeam of the charged particle-optical plates; a downbeam electrostatic shield arranged across the beam path downbeam of the charged particle- optical plates; and at least one side shield located to a side of the charged particle-optical plates in a direction in a plane across the beam path; wherein the shield arrangement is configured to deter electrical breakdown between the charged particle-optical module and a component external to the charged particle-optical module and/ or to confine an electrostatic field within the charged particle-optical module, the electrostatic field for example generated in operation of the charged particle-optical plates on the charged particle beam along the beam path.
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p.ex. pour y subir un examen ou un traitement - Détails
H01J 37/09 - Diaphragmes; Ecrans associés aux dispositifs électronoptiques ou ionoptiques; Compensation des champs perturbateurs
96.
SYSTEM AND METHOD FOR CALIBRATION OF INSPECTION TOOLS
Systems, apparatuses, and methods for calibration of inspection tools. Systems, apparatuses, and methods may include, after a replaceable reference sample is affixed to a stage of an imaging system: calibrating a parameter of the imaging system based on a scan of the reference sample by the imaging system; and after calibrating the parameter of the imaging system, scanning a sample, 5 wherein the sample comprises a duplicate of a feature of the reference sample.
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
G01N 23/00 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou
09 - Appareils et instruments scientifiques et électriques
37 - Services de construction; extraction minière; installation et réparation
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Semiconductor manufacturing machines and semiconductor machinery. Electronic imaging hardware and software in the field of inspection of semiconductor materials, namely, semiconductor wafers and reticles; computer hardware and software for inspection of semiconductor materials, namely, semiconductor wafers and reticles. Machinery maintenance and repair in the field of semiconductor industry; installation of semiconductor machines and semiconductor instruments and apparatus; installation of machines, instruments and apparatus for the manufacture of semiconductors. Technology supervision and inspection in the field of quality control of semiconductor wafers and reticles.
98.
LITHOGRAPHIC APPARATUS, LOCKING DEVICE, AND METHOD
A lithographic apparatus includes an illumination system to illuminate a pattern of a patterning device, a projection system to project an image of the pattern onto a substrate, a movable stage to support the patterning device or the substrate, a slotted object, and a locking device (700) to prevent a motion of the movable stage. The locking device comprises an actuator (702) and a wheel device (704) comprising a ring feature (708) and coupled to the actuator. The actuator rotates the wheel device about a rotation axis (706). The ring feature has a width (710) defined parallel to the rotation axis. The width is variable with respect to azimuthal direction of the wheel device. The ring feature engages a slot of the slotted object. The rotating adjusts the width of the ring feature within the slot such that a relative motion between the device and the slotted object is prevented.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
99.
METROLOGY SYSTEMS WITH PHASED ARRAYS FOR CONTAMINANT DETECTION AND MICROSCOPY
A metrology system includes a radiation source (708), a phased array (722a,b;724a,b;726;734), a detector, and a comparator. The phased array includes optical elements (706), waveguides (704), and phase modulators (702). The phased array generates a beam of radiation and directs the beam toward a surface of an object. The optical elements radiate radiation waves. The waveguides guide radiation from the radiation source to the optical elements. The phase modulators adjust phases of the radiation waves such that the radiation waves combine to form the beam. The detector receives radiation scattered from the surface and generates a detection signal based on the received radiation. The comparator analyzes the detection signal and determines a location of a defect on the surface based on the analyzing.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01N 21/956 - Inspection de motifs sur la surface d'objets
G02F 1/295 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de la position ou de la direction des rayons lumineux, c. à d. déflexion dans une structure de guide d'ondes optique
100.
METROLOGY SYSTEM AND METHOD FOR DETERMINING A CHARACTERISTIC OF ONE OR MORE STRUCTURES ON A SUBSTRATE
Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01B 11/02 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
G01N 21/47 - Dispersion, c. à d. réflexion diffuse
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique