Systems and methods for detecting a defect on a sample include receiving a first image and a second image associated with the first image; determining, using a clustering technique, N first feature descriptor(s) for L first pixel(s) in the first image and M second feature descriptor(s) for L second pixel(s) in the second image, wherein each of the L first pixel(s) is co-located with one of the L second pixel(s), and L, M, and N are positive integers; determining K mapping probability between a first feature descriptor of the N first feature descriptor(s) and each of K second feature descriptor(s) of the M second feature descriptor(s), wherein K is a positive integer; and providing an output for determining whether there is existence of an abnormal pixel representing a candidate defect on the sample based on a determination that one of the K mapping probability does not exceed a threshold value.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
G06T 7/73 - Détermination de la position ou de l'orientation des objets ou des caméras utilisant des procédés basés sur les caractéristiques
A charged particle assessment apparatus comprising: a charged particle beam device; an actuated sample stage; a hot component and a thermal compensator. The actuated sample stage is configured to hold a sample. The hot component is configured to operate such that, during operation, heat is radiated toward a sample held on the sample holder. The hot component is smaller than the sample. The thermal compensator is configured to heat the sample so as to reduce thermal gradients therein.
An improved systems and methods for correcting distortion of an inspection image are disclosed. An improved method for correcting distortion of an inspection image comprises acquiring an inspection image, aligning a plurality of patches of the inspection image based on a reference image corresponding to the inspection image, evaluating, by a machine learning model, alignments between each patch of the plurality of patches and a corresponding patch of the reference image, determining local alignment results for the plurality of patches of the inspection image based on a reference image corresponding to the inspection image, determining an alignment model based on the local alignment results, and correcting a distortion of the inspection image based on the alignment model.
G06T 7/33 - Détermination des paramètres de transformation pour l'alignement des images, c. à d. recalage des images utilisant des procédés basés sur les caractéristiques
4.
CHARGED-PARTICLE APPARATUS, MULTI-DEVICE APPARATUS, METHOD OF USING CHARGED-PARTICLE APPARATUS AND CONTROL METHOD
A charged-particle apparatus generates a plurality of sub-beams from a source beam of charged particles and direct the sub-beams downbeam toward a sample position. The charged-particle apparatus comprises a charged particle source, an aperture array, and a charged particle optical component. The charged-particle source comprises an emitter to emit a source beam of charged particles along a divergent path. The aperture array is positioned in the divergent path so the aperture array generates sub-beams from the source beam. The charged-particle-optical component acts on the source beam upbeam of the aperture array. The charged-particle-optical component comprises a multipole and/or a charged-particle lens. The multipole operates on the source beam to vary the position of the divergent path at the aperture array. The multipole may vary a cross-sectional shape of the divergent path at the aperture array. The charged-particle-optical lens compensates for variations in distance between the emitter and the aperture array.
A system includes a support table having one or more protrusions and a pressure device. The one or more protrusions contact and support a substrate such that the substrate is suspended with respect to the support table. Sagging of the substrate when supported by the support table is based on a material and/or dimensions of the substrate. The pressure adjusts a pressure on a side of the substrate such that the sagging is reduced.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
6.
SYSTEMS AND METHODS FOR THERMALLY STABLE MOUNTING OF OPTICAL COLUMNS
Systems and methods are disclosed for stabilizing an optical column. One system can include an optical column; a frame configured to support the optical column, the frame having a first coefficient of thermal expansion (CTE); and a subframe configured to be coupled to the optical column in at least two places by a first anchor and a second anchor to stabilize the optical column against a displacement or a rotation caused by thermal expansion in the frame or the optical column, the subframe having a second CTE lower than the first CTE.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A method of designing a target includes obtaining a model of an initial dataset, performing a Bayesian optimization using the model which provides an improved model, and performing an optimization of the target design using the improved model.
Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01B 11/02 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
G01N 21/47 - Dispersion, c. à d. réflexion diffuse
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
9.
SYSTEM AND METHOD FOR INSPECTION BY FAILURE MECHANISM CLASSIFICATION AND IDENTIFICATION IN A CHARGED PARTICLE SYSTEM
Apparatuses, systems, and methods for providing beams for classifying and identifying failure mechanisms associated with a sample of charged particle beam systems. In some embodiments, a method may include analyzing a first plurality of voltage contrast images of a sample to identify a plurality of defects; and analyzing a pattern of a subset of the plurality of defects to determine a failure mechanism for the subset of the plurality of defects.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
10.
MATCH THE ABERRATION SENSITIVITY OF THE METROLOGY MARK AND THE DEVICE PATTERN
Generating a design (e.g., a metrology mark or a device pattern to be printed on a substrate) that is optimized for aberration sensitivity related to an optical system of a lithography system. A metrology mark (e.g., a transmission image sensor (TIS) mark) is optimized for a given device pattern by matching the aberration sensitivity of the metrology mark with the aberration sensitivity of the device pattern. A cost function that includes the aberration sensitivity difference between the metrology mark and the device pattern is evaluated based on an imaging characteristic response (e.g., a critical dimension (CD) response to focus) obtained from a simulation model that simulates lithography. The cost function is evaluated by modifying the metrology mark until the cost function is minimized and an optimized metrology mark is output when the cost function is minimized.
G03F 1/36 - Masques à correction d'effets de proximité; Leur préparation, p.ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
Charged-particle optical devices are disclosed. In one arrangement, a device includes a charged particle column and a light sensor. An objective lens array projects a plurality of beams towards a sample and has a plurality of electrodes arranged along a path of the plurality of beams. A plurality of scintillators receives signal particles emitted from the sample. Light is generated in response to the received signal particles. A light guiding arrangement guides light generated by the scintillators to the light sensor. The light guiding arrangement includes a mirror defining a plurality of apertures to allow passage of the plurality of beams through the mirror towards the sample.
H01J 37/147 - Dispositions pour diriger ou dévier la décharge le long d'une trajectoire déterminée
H01J 37/244 - Détecteurs; Composants ou circuits associés
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p.ex. implantation d'ions
A contamination reduction system for reducing contamination of a patterning system in a plasma environment, comprising: a support arranged to hold a patterning system in a radiation beam; a shutter configured to shield a portion of the radiation beam from the patterning system; and an electrode positioned between the shutter and the support, the electrode connected to a voltage source and configured to generate an electric field between the electrode and the patterning system held by the support.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
13.
METHOD OF DETERMINING A CORRECTION FOR AT LEAST ONE CONTROL PARAMETER IN A SEMICONDUCTOR MANUFACTURING PROCESS
A method and associated computer program and apparatuses for determining a correction for at least one control parameter, the at least one control parameter for controlling a semiconductor manufacturing process so as to manufacture semiconductor devices on a substrate. The method includes: obtaining metrology data relating to the semiconductor manufacturing process or at least part thereof; obtaining associated data relating to the semiconductor manufacturing process or at least part thereof, the associated data providing information for interpreting the metrology data; and determining the correction based on the metrology data and the associated data, wherein the determining is such that the determined correction depends on a degree to which a trend and/or event in the metrology data should be corrected based on the interpretation of the metrology data.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
14.
SYSTEM AND METHOD FOR ADJUSTING BEAM CURRENT USING A FEEDBACK LOOP IN CHARGED PARTICLE SYSTEMS
Apparatuses, systems, and methods for adjusting beam current using a feedback loop are provided. In some embodiments, a system may include a first anode aperture configured to measure a current of an emitted beam during inspection of a sample, wherein the first anode aperture is positioned in an environment that is configured to support a vacuum pressure of less than 3×10−10 torr and a controller including circuitry configured to cause the system to perform: generating a feedback signal when a difference between the measured current and a setpoint current exceeds a threshold value and adjusting a voltage of an extractor voltage supply based on the feedback signal during inspection of the sample such that a difference between an adjusted current of the emitted beam and the setpoint current is below the threshold value.
H01J 37/24 - Circuits non adaptés à une application particulière du tube et non prévus ailleurs
H01J 37/065 - Montage des canons ou de leurs éléments constitutifs
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
15.
ELECTROMAGNETIC MOTOR SYSTEM, POSTION CONTROL SYSTEM, STAGE APPARATUS, LITHOGRAPHIC APPARATUS, METHOD OF DETERMINING A MOTOR-DEPENDENT COMMUTATION MODEL FOR AN ELECTROMAGNETIC MOTOR
The invention provides a method of determining a motor-dependent commutation model for an electromagnetic motor, whereby the electromagnetic motor comprises a first member comprising a coil array comprising at least M coils, and a second member comprising a magnet array configured to generate a spatially alternating magnetic field, whereby the first member and the second member are configured to displace relative to each other in N degrees of freedom, N
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H02P 23/00 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par un procédé de commande autre que la commande par vecteur
16.
PLATFORM FOR CHARGED PARTICLE APPARATUS AND COMPONENTS WITHIN A CHARGED PARTICLE APPARATUS
Disclosed herein is a platform for a charged particle apparatus, the platform comprising: a base frame; a chamber arranged to comprise a substrate; a metrology frame arranged to support a charged particle beam generator for irradiating a substrate in the chamber with a charged particle beam; and a bellow arranged between the metrology frame and the chamber; wherein: the chamber is rigidly connected to the base frame; the bellow comprises a flexible material such that the metrology frame is substantially isolated from any vibrations that are generated in the chamber; and the bellow is air tight so that a substantial vacuum may be established in the chamber.
A method for generating a mask pattern for a lithographic process. The method involves generating a smoothed representation of a segmented mask pattern by applying a first smoothing function and adjusting the segmented mask pattern by with a set of changes to one or more of the plurality of segmented features. Further, a patterning process simulation is performed in an iterative manner by using the smoothed mask pattern of an adjusted segmented mask pattern until a termination condition is satisfied. In each iteration, upon adjusting the segmented mask pattern, a smoothed mask pattern is generated and used by process models to simulate the patterning process. Once the termination condition is satisfied, a resultant segmented mask pattern is obtained. Then, a final mask pattern is generated by applying a second smoothing function to a resultant segmented mask pattern.
G03F 1/36 - Masques à correction d'effets de proximité; Leur préparation, p.ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p.ex. correction par deuxième itération d'un motif de masque pour l'imagerie
18.
LITHOGRAPHIC APPARATUS, TEMPERATURE SENSOR, AND FIBER BRAGG GRATING SENSOR
A lithographic apparatus includes an illumination system, a projection system, a temperature-sensitive object, and a temperature sensor that includes a detector and waveguide device that is thermally coupled to the temperature-sensitive object and includes an input end, a downstream end, and first and second scattering features. The illumination system illuminates a pattern of a patterning device. The projection system projects an image of the pattern onto a substrate. Based on temperature, the first scattering feature reflects a first spectrum. Radiation not reflected by the first scattering feature is allowed downstream. Based on temperature, the second scattering feature reflects a second spectrum different from the first spectrum. Radiation not reflected by the second scattering feature is allowed downstream. The detector is disposed to receive radiation including the reflected first and second spectra from the input end and generates a measurement signal based on the received radiation.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01K 1/02 - Moyens d’indication ou d’enregistrement spécialement adaptés aux thermomètres
G01K 7/22 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs l'élément étant une résistance non linéaire, p.ex. une thermistance
G01K 11/3206 - Mesure de la température basée sur les variations physiques ou chimiques, n'entrant pas dans les groupes , , ou utilisant des changements dans la transmittance, la diffusion ou la luminescence dans les fibres optiques en des endroits distincts de la fibre, p.ex. utilisant la diffusion de Bragg
An optical element, and a metrology tool or system employing the optical element for measurements of structures on a substrate. The optical element includes a first portion configured to reflect the light received from an illumination source towards the substrate, and a second portion configured to transmit the light redirected from the substrate or a desired location, the first portion having a higher coefficient of reflectivity than the second portion, and the second portion having a higher coefficient of transmissivity than the first portion. A metrology tool may include the optical elements and a sensor configured to receive a diffraction pattern caused by radiation redirected from a substrate, and a processor configured to receive a signal relating to the diffraction pattern from the sensor, and determine overlay associated with the substrate by analyzing the signal.
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
A wafer including a mask on one face and at least one layer on an opposite face, wherein the mask has at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle, the method including: providing a wafer having a mask on one face and at least one layer on an opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle, the method including: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidizing environment. In any aspect, the pellicle may include a metal nitride layer.
G03F 1/64 - Pellicules, p.ex. assemblage de pellicules ayant une membrane sur un cadre de support; Leur préparation caractérisés par les cadres, p.ex. du point de vue de leur structure ou de leur matériau
G03F 1/62 - Pellicules, p.ex. assemblage de pellicules ayant une membrane sur un cadre de support; Leur préparation
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
22.
SYSTEMS, METHODS, AND DEVICES FOR THERMAL CONDITIONING OF RETICLES IN LITHOGRAPHIC APPARATUSES
Embodiments herein describe systems, methods, and devices for thermal conditioning of patterning devices at a litho-graphic apparatus. A patterning device cooling system for thermally conditioning a patterning device (202) of a lithographic apparatus is described, the cooling system including a thermal conditioner that thermally conditions the patterning device, and a controller that controls the thermal conditioner to determine a temperature state of the patterning device, determine a production state of the litho-graphic apparatus, and thermally condition the patterning device for exposures based on the temperature state and a production state of the lithographic apparatus.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
Disclosed herein is a non-transitory computer readable medium that has stored therein a computer program, wherein the computer program comprises code that, when executed by a computer system, instructs the computer system to perform a method of determining the charging induced distortion of a SEM image, the method comprising: determining, at each of a plurality of locations in a SEM image of at least part of a sample, a deflection of an illuminating charged particle beam caused by a charging of the sample at the location; and determining the charging induced distortion of the SEM image in dependence on the determined deflections at each of the plurality of locations in the SEM image.
Identification of error clusters in an image predicted by a simulation model (e.g., a machine learning model), and training or adjusting the simulation model by feeding the error cluster information back to the simulation model to improve the prediction in regions of the image having the error clusters. Further, embodiments are disclosed for scoring the predicted images, or the simulation models generating those predicted images, based on a severity of errors in the error clusters. The score may be used in evaluating the simulation models to select a specific simulation model for generating a predicted image that may be used in manufacturing a mask to print a desired pattern on a substrate.
G03F 1/36 - Masques à correction d'effets de proximité; Leur préparation, p.ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
The embodiments of the present disclosure provide a charged particle assessment system for projecting a beam of charged particles towards a sample. The system comprises a sample holder configured to hold a sample; a charged particle optical system configured to project a beam of charged particles from a charged particle source downbeam towards the sample and comprising a cleaning target; and a cleaning device. The cleaning device is configured to supply cleaning medium in a cleaning flow towards the cleaning target incident on the cleaning target so that the cleaning flow approaches the cleaning target from downbeam of the cleaning target, and to stimulate the cleaning medium at or near the cleaning target such that the cleaning medium cleans at least a portion of the surface of the cleaning target.
G01N 23/2202 - Préparation d’échantillons à cet effet
B08B 5/00 - Nettoyage par des procédés impliquant l'utilisation d'un courant d'air ou de gaz
B08B 7/00 - Nettoyage par des procédés non prévus dans une seule autre sous-classe ou un seul groupe de la présente sous-classe
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
A method of measuring an overlay or focus parameter from a target and associated metrology apparatus. The method includes configuring measurement radiation to obtain a configured measurement spectrum of the measurement radiation by: imposing an intensity weighting on individual wavelength bands of the measurement radiation such that the individual wavelength bands have an intensity according to the intensity weighting, the intensity weighting being such that a measured value for the overlay or focus parameter is at least partially corrected for the effect of target imperfections; and/or imposing a modulation on a measurement spectrum of the measurement radiation. The configured measurement radiation is used to measure the target. A value for the overlay or focus parameter is determined from scattered radiation resultant from measurement of the target.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
Systems, apparatuses, and methods are provided for removing heat from a reticle. An example method can include generating, by a cooling controller, a cooling control signal based on timing data for a projection of a patterned radiation beam formed by illuminating an exposed area on a reticle supported by a reticle table, absorption data for the exposed area, and a target heat transfer rate. The cooling control signal can instruct a reticle cooling apparatus to actuate actuators to modify a distance between the reticle and a roof of the reticle cooling apparatus. The method can further include modifying, by the actuators based on the cooling control signal, the distance between the reticle and the roof to modify a heat transfer rate associated with a removal of heat from the reticle towards the target heat transfer rate.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
28.
APPARATUS AND METHOD FOR PRODUCING DROPLETS OF TARGET MATERIAL IN AN EUV SOURCE
Apparatus for and method of accelerating droplets used to generate EUV radiation that comprise an arrangement producing a laser beam directed to an irradiation region and a droplet source. The droplet source includes a fluid exiting a nozzle (200) in a stream that breaks up into droplets that then undergo coalescence. A gas provided for the purpose of accelerating the droplets is caused to flow past the nozzle in a streamwise direction.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p.ex. utilisant la génération d'un plasma
29.
IMPROVED BROADBAND RADIATION GENERATION IN PHOTONIC CRYSTAL OR HIGHLY NON-LINEAR FIBRES
Radiation source assembly and method for generating broadband radiation by spectral broadening. The radiation source assembly includes a pump assembly configured to provide broadband input radiation. The pump assembly includes a pump source configured to provide first radiation at a pump wavelength, and a broadband assembly configured to provide second radiation including a continuous wavelength range, wherein the first radiation and the second radiation form the broadband input radiation. The radiation source assembly further includes an optical fibre configured to receive the broadband input radiation. The optical fibre includes a core configured along at least a part of the length of the fibre to guide the received broadband input radiation during propagation through the fibre, so as to generate broadband radiation by spectral broadening to be output by the fibre.
A method for determining thermally-induced deformation of a structure in a lithographic apparatus, the method including: obtaining timing data for a structure in a lithographic apparatus, wherein the timing data includes timing data for the current state of the structure and timing history data that includes timing data for at least one previous state of the structure; and using one or more models to determine thermally-induced deformation data for the structure in dependence on the timing history data and the timing data for the current state of the structure.
A deformable mirror system (300, 400, 500), comprising a monolithic support structure (310, 410, 510), comprising a first side (311) configured to receive a mirror (350, 450, 550); and a second side (312) configured to receive a plurality of actuators (460, 560) such that the actuators are positioned to enable selective deformation of a reflective surface (351, 451, 551) of the mirror.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
A detector for use in a charged particle device for an assessment apparatus to detect charged particles from a sample, wherein the detector includes: a backscatter detector component set to a backscatter bias electric potential and configured to detect higher energy charged particles; and a secondary detector component set to a secondary bias electric potential and configured to detect lower energy charged particles, wherein there is a potential difference between the backscatter bias electric potential and the secondary bias electric potential.
G01N 23/2206 - Combinaison de plusieurs mesures, l'une au moins étant celle d’une émission secondaire, p.ex. combinaison d’une mesure d’électrons secondaires [ES] et d’électrons rétrodiffusés [ER]
G01N 23/203 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux en mesurant la rétrodiffusion
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
33.
DETERMINING ROUNDED CONTOURS FOR LITHOGRAPHY RELATED PATTERNS
A methods and systems for determining rounded contours of target contours or other lithography related contour for mask design. The method includes converting a contour representation to (i) a first set of contour point locations in a first dimension (e.g., x) and (ii) a second set of contour point locations in a second dimension (e.g., y). A signal function is determined based on the first and second sets of contour point locations, the signal function indicative of different segments of the contour representation. The first set of contour point locations is updated based on a first filter function and the signal function, and the second set of contour point locations is updated based on a second filter function and the signal function. Based on the updated contour point locations, a rounded contour of the contour representation is generated.
G03F 1/36 - Masques à correction d'effets de proximité; Leur préparation, p.ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
34.
COMPUTER IMPLEMENTED METHOD FOR DIAGNOSING A SYSTEM COMPRISING A PLURALITY OF MODULES
A computer implemented method for diagnosing a system includes: receiving a causal graph, the causal graph defining (i) a plurality of nodes each representing a module of a plurality of modules of a system, wherein each module is characterized by one or more signals; and (ii) edges connected between the nodes, the edges representing propagation of performance between modules; generating a reasoning tool by augmenting the causal graph with diagnostics knowledge based on historically determined relations between performance, statistical and causal characteristics of at least one module out of the plurality of modules; obtaining a health metric of the at least one module, wherein the health metric is associated with the one or more signals associated with the at least one module; and using the health metric as an input to the reasoning tool to identify a module that is the most likely cause of the behavior.
G06F 30/398 - Vérification ou optimisation de la conception, p.ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
35.
INSPECTION SYSTEM FOR RETICLE PARTICLE DETECTION USING A STRUCTURAL ILLUMINATION WITH APERTURE APODIZATION
An inspection system includes a projection system including a radiation source configured to transmit an illumination beam along an illumination path and an aperture stop configured to select a portion of the illumination beam. The inspection system also includes an aperture stop that selects a portion of the illumination beam and an optical system that transmits the selected portion of the illumination beam towards an object and transmit a signal beam scattered from the object. The inspection system also includes a detector that detects the signal beam.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A detector assembly for use in a charged particle device for an assessment tool to detect signal particles emitted by a sample in response to a charged particle beam, the detector assembly including: a scintillator element configured to generate photons on interaction with signal particles above a first energy threshold; a charge based element configured to detect signal particles below a second energy threshold, wherein the charge based element is positioned so that at least some of the signal particles above a first energy threshold pass through the charged based element to the scintillator element.
G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
37.
HOLDING DEVICE FOR HOLDING A STRUCTURAL PART AND METHOD FOR MANUFACTURING THE HOLDING DEVICE
A holding device (100) for holding a structural part, in particular a semiconductor wafer (1) or a lithography mask, comprises a base body (10), which is formed from at least one board (11) with an upper side, and a plurality of protruding studs (12), which are arranged on the upper side of the board (11) and form a contact surface (13) with a predetermined flatness for contacting the structural part, wherein on the upper side of the board (11) a notch absorption layer (21) is provided, which has such a low volume density that the notch absorption layer (21) can be compressed by a compaction in the layer volume in the case of mechanical actions by foreign particles (2), without compromising the flatness of the contact surface (13). A method for manufacturing a holding device (100) for holding a structural part is also described.
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
B25B 11/00 - Porte-pièces ou dispositifs de mise en position non couverts par l'un des groupes , p.ex. porte-pièces magnétiques, porte-pièces utilisant le vide
38.
A SEED LASER OPTICAL ISOLATOR, SEED ISOLATOR MODULE, EUV RADIATION SOURCE, LITHOGRAPHIC APPARATUS AND OPTICAL ISOLATOR OPERATING METHOD
The present invention relates to an optical isolator for a seed laser, comprising: an acousto-optic modulator crystal configured to manipulate laser light incident thereto, and at least one cooling system configured to regulate a temperature of the crystal, said cooling system comprising: a cooling element including one or more channels for a fluidic cooling medium, a heat transfer assembly arranged between the crystal and the cooling element to transfer heat from the crystal to the cooling element, wherein the heat transfer assembly includes an active heat transfer element.
H01S 3/00 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet
G02F 1/11 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p.ex. commutation, ouverture de porte ou modulation; Optique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des éléments acousto-optiques, p.ex. en utilisant la diffraction variable par des ondes sonores ou des vibrations mécaniques analogues
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H01S 3/04 - Dispositions pour la gestion thermique
H01S 3/223 - Lasers, c. à d. dispositifs utilisant l'émission stimulée de rayonnement électromagnétique dans la gamme de l’infrarouge, du visible ou de l’ultraviolet caractérisés par le matériau utilisé comme milieu actif à gaz le gaz actif étant polyatomique, c. à d. contenant plusieurs atomes
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p.ex. utilisant la génération d'un plasma
39.
AN ILLUMINATION SOURCE AND ASSOCIATED METHOD APPARATUS
An assembly for receiving a pump radiation to interact with a gas medium at an interaction space to generate an emitted radiation. The assembly comprising: an object with a hollow core, wherein the hollow core has an elongated volume through the object, wherein the interaction space is located inside the hollow core, and a heat conductive structure that connects at multiple locations of an outside wall of the object for transferring heat generated at the interaction space away from the object.
Apparatuses, systems, and methods for transferring fluid to a stage in a charged particle beam system are disclosed. In some embodiments, a stage may be configured to secure a wafer; a chamber may be configured to house the stage; and a tube may be provided within the chamber to transfer fluid between the stage and outside of the chamber. The tube may include a first tubular layer of first material, wherein the first material is a flexible polymer; and a second tubular layer of second material, wherein the second material is configured to reduce permeation of fluid or gas through the tube. In some embodiments, a system may include a degasser system outside of the chamber, where the degasser system may be configured to remove gases from the transfer fluid before the transfer fluid enters the tube.
F16L 11/04 - Manches, c. à d. tuyaux flexibles en caoutchouc ou en matériaux plastiques flexibles
F16L 11/12 - Manches, c. à d. tuyaux flexibles en caoutchouc ou en matériaux plastiques flexibles avec agencements pour usages particuliers, p.ex. spécialement profilés, avec couche protectrice, chauffés, conducteurs d'électricité
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
41.
HYBRID PHOTORESIST COMPOSITION FOR EXTREME ULTRAVIOLET PHOTOLITHOGRAPHY APPLICATIONS
A resist composition for use in the fabrication of integrated circuits, the use of a resist composition, and a lithographic method utilizing a resist composition, wherein the resist composition includes an alkyltin-oxo cage having a counterion selected from tetrakis(pentafluorophenyl) borate, tetrakis[3,5-bis(trifluoromethyl)phenyl]borate, tetrakis[3,5-bis(tert-butyl)phenyl]borate, or tetrakis[(3,5-bis(1,1,1,3,3,3-hexafluoro-2-methoxypropan-2-yl)phenyl)phenyl]borate. A lithographic method including: providing a resist composition including an alkyltin-oxo cage having a counterion selected from the above borate groups; exposing the resist composition to a patterned radiation beam or an electron beam to form a pattern in the resist composition; and developing the exposed resist composition to form a circuit pattern.
To monitor semiconductor manufacturing process variation, contours of identical pattern features are determined based on SEM images, and the contours are aggregated and statistically analyzed to determine the variation of the feature. Some of the contours are outliers, and the aggregation and averaging of the contours “hides” these outliers. The present disclosure describes filtering certain outlier contours before they are aggregated and statistically analyzed. The filtering can be performed at multiple levels, such as based on individual points on the contours in the set of inspection contours, or based on overall geometrical shapes of the contours in the set of inspection contours.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A substrate holder for holding a substrate comprising a frame and a surface clamping device arranged on an underside of the frame configured to electrostatically attract an upper surface of the substrate from above the substrate. The substrate holder can be used to contactlessly hold and deform the substrate and thereby control a shape of the substrate. The substrate holder is suitable for use in a semiconductor processing apparatus and can operate in a vacuum or near-vacuum environment, such as in an EUV lithographic apparatus.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
A method of producing photonic crystal fibers (PCFs) is disclosed, the method includes: 1) obtaining an intermediate PCF having an initial outer fiber diameter of less than 1 mm; and 2) elongating the intermediate PCF so as to controllably reduce at least one dimension of the intermediate PCF.
The present application discloses detector assembly for a charged particle assessment apparatus, the detector assembly comprising a plurality of electrode elements, each electrode element having a major surface configured to be exposed to signal particles emitted from a sample, wherein between adjacent electrode elements is a recess that is recessed relative to the major surfaces of the electrode elements, and wherein at least one of the electrode elements is a detection element configured to detect signal particles and the recess extends laterally behind the detection element. Charged particle assessment devices and apparatus, and corresponding methods are also provided.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
46.
METROLOGY METHOD FOR MEASURING AN EXPOSED PATTERN AND ASSOCIATED METROLOGY APPARATUS
Disclosed is a method for performing a measurement of an exposed pattern in photoresist on a substrate and an associated metrology device. The method comprises imparting a beam of measurement radiation on said exposed pattern over a measurement area of a size which prevents or mitigates photoresist damage from the measurement radiation; capturing scattered radiation comprising said measurement radiation subsequent to it having been scattered from said exposed pattern and detecting the scattered radiation on at least one detector. A value for a parameter of interest is determined from the scattered radiation.
Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to accurately expose patterns on the substrate. An example method can include receiving a measurement signal including a combined intensity signal corresponding to first and second diffracted light beams diffracted from first and second alignment targets having different orientations. The example method can further include fitting the combined intensity signal using templates to determine weight values and determining, based on the templates and weight values, first and second intensity sub-signals corresponding to the first and second diffracted light beams. The method can further include determining first and second intensity imbalance signals based on the first and second intensity sub-signals and determining a set of corrections to the measurement signal based on the first and second intensity imbalance signals.
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
48.
SUBSTRATE HOLDER, LITHOGRAPHIC APPARATUS, DEVICE MANUFACTURING METHOD, AND METHOD OF MANUFACTURING A SUBSTRATE HOLDER
A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
B05D 3/06 - Traitement préalable des surfaces sur lesquelles des liquides ou d'autres matériaux fluides doivent être appliqués; Traitement ultérieur des revêtements appliqués, p.ex. traitement intermédiaire d'un revêtement déjà appliqué, pour préparer les applications ultérieures de liquides ou d'autres matériaux fluides par exposition à des rayonnements
B05D 5/00 - Procédés pour appliquer des liquides ou d'autres matériaux fluides aux surfaces pour obtenir des effets, finis ou des structures de surface particuliers
B22F 7/06 - Fabrication de couches composites, de pièces ou d'objets à base de poudres métalliques, par frittage avec ou sans compactage de pièces ou objets composés de parties différentes, p.ex. pour former des outils à embouts rapportés
B22F 10/00 - Fabrication additive de pièces ou d’objets à partir de poudres métalliques
B23K 26/354 - Travail par rayon laser, p.ex. soudage, découpage ou perçage pour le traitement de surface par fusion
B23Q 3/18 - Dispositifs permettant de maintenir, supporter ou positionner les pièces ou les outils, ces dispositifs pouvant normalement être démontés de la machine pour positionner uniquement
Disclosed is a method for modeling alignment data over a substrate area relating to a substrate being exposed in a lithographic process. The method comprises obtaining alignment data relating to said substrate and separating the alignment data into systematic component which is relatively stable between different substrates and a non-systematic component which is not relatively stable between different substrates. The systematic component and the non-systematic component are individually modeled and a process correction for the substrate determined based on the modeled systematic component and modeled non-systematic component.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
G06F 30/398 - Vérification ou optimisation de la conception, p.ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved load lock unit is disclosed. An improved load lock system may comprise a plurality of supporting structures configured to support a wafer and a conditioning plate including a heat transfer element configured to adjust a temperature of the wafer. The load lock system may further comprise a gas vent configured to provide a gas between the conditioning plate and the wafer and a controller configured to assist with the control of the heat transfer element.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
Disclosed is a method of measuring a target on a substrate using a metrology tool comprising an illumination source operable to emit an illumination beam for illuminating the target and a metrology sensor for collecting the scattered radiation having been scattered by the target. The method comprises calculating a target angle based on cell dimensions of a unit cell of said target in a first direction and a second direction orthogonal to said first direction; and order numbers of a selected pair of complementary diffraction orders in said first direction and second direction. At least one pair of measurement acquisitions is performed at a first target orientation and a second target orientation with respect to the illumination beam, wherein said target angle for at least one of said at least one pair of measurement acquisitions is an oblique angle.
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
52.
METHOD FOR GENERATING ASSIST FEATURES USING MACHINE LEARNING MODEL
Described herein is a method of determining assist features for a mask pattern. The method includes obtaining (i) a target pattern comprising a plurality of target features, wherein each of the plurality of target features comprises a plurality of target edges, and (ii) a trained sequence-to-sequence machine leaning (ML) model (e.g., long short term memory, Gated Recurrent Units, etc.) configured to determine sub-resolution assist features (SRAFs) for the target pattern. For a target edge of the plurality of target edges, geometric information (e.g., length, width, distances between features, etc.) of a subset of target features surrounding the target edge is determined. Using the geometric information as input, the ML model generates SRAFs to be placed around the target edge.
G03F 1/36 - Masques à correction d'effets de proximité; Leur préparation, p.ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
A method of determining offsets between a plurality of data sets, each data set representing a sampling area of a pattern formed on a sample, wherein each sampling area derives from a predetermined portion of a mask pattern, the method comprising: detecting a fingerprint of the mask pattern in noise of the data sets; and determining offsets based on the fingerprint of the mask pattern.
G06T 7/33 - Détermination des paramètres de transformation pour l'alignement des images, c. à d. recalage des images utilisant des procédés basés sur les caractéristiques
G06T 7/32 - Détermination des paramètres de transformation pour l'alignement des images, c. à d. recalage des images utilisant des procédés basés sur la corrélation
54.
MODULAR WAFER TABLE AND METHODS OF MANUFACTURING THEREOF
The present disclosure is directed to a modular wafer table and methods for refurbishing a scrapped wafer to manufacture the modular wafer table. The method comprises removing one or more burls from a surface of a wafer table; polishing the surface of the wafer table after removing the one or more burls to form a core module; forming a burl module having a plurality of burls thereon; and bonding the core module to the burl module.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p.ex. mandrins, pièces de serrage, pinces
A charged particle assessment tool includes: an objective lens configured to project a plurality of charged particle beams onto a sample, the objective lens having a sample-facing surface defining a plurality of beam apertures through which respective ones of the charged particle beams are emitted toward the sample; and a plurality of capture electrodes adjacent respective ones of the beam apertures and configured to capture charged particles emitted from the sample.
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p.ex. implantation d'ions
A fluid handling system for a lithographic apparatus, the fluid handling system configured to confine immersion liquid to a liquid confinement space between a part of a projection system and a surface of a substrate in the lithographic apparatus wherein a radiation beam projected from the projection system can irradiate the surface of the substrate by passing through the immersion liquid, the fluid handling system including: a liquid extraction member, having an inlet side and an outlet side, that is arranged to extract the immersion liquid from the liquid confinement space by a fluid flow from the inlet side to the outlet side; and a further liquid supply to the outlet side of the liquid extraction member arranged so that the outlet side receives liquid from a different source than the liquid confinement space.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
57.
FIBER ALIGNMENT MONITORING TOOL AND ASSOCIATED FIBER ALIGNMENT METHOD
Disclosed is fiber alignment monitoring tool for monitoring of beam alignment of a beam generated by a source module with respect to an optical fiber. The fiber alignment monitoring tool comprises a coupling arrangement for coupling the fiber alignment monitoring tool to a beam adjustment tool of said source module; and a beam alignment sensor operable to sense beam alignment and provide a beam alignment signal indicating beam alignment status, said beam alignment status describing a position status and/or angle status of said beam.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
Disclosed is a parallel metrology sensor system comprising a reference frame and a plurality of integrated optics sensor heads, each integrated optics sensor head configured to perform an independent measurement. Each of the integrated optics sensor heads is operable to measure its position with respect to the reference frame.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
59.
DETERMINING MASK RULE CHECK VIOLATIONS AND MASK DESIGN
Methods and systems for determining a mask rule check violation (MRC) associated with a mask feature using a detector having geometric properties corresponding to the MRC. The detector (e.g., elliptical shaped) is configured to include a curved portion to detect a curvature violation, include an enclosed area (e.g., a fully enclosed area or a partially enclosed area having an opening), include a predefined orientation axis configured to guide relative positioning of the detector with a mask feature, and include a length to detect a critical dimension violation. The orientation axis of the detector is aligned with a normal axis at a location on the mask feature. Based on the orientation axis aligned with the normal axis of the mask feature, an MRC violation is determined corresponding to a region of the mask feature that intersects the enclosed area.
G03F 1/36 - Masques à correction d'effets de proximité; Leur préparation, p.ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G06F 30/20 - Optimisation, vérification ou simulation de l’objet conçu
60.
MANIPULATION OF CARRIER TRANSPORT BEHAVIOR IN DETECTOR
A charged particle detector may include a plurality of sensing elements formed in a substrate, wherein a sensing element of the plurality of sensing elements is formed of a first region on a first side of the substrate, and a second region on a second side of the substrate, the second side being opposite to the first side. The detector may also include a plurality of third regions formed on the second side of the substrate, the third regions including one or more circuit components. The detector may also include an array of fourth regions formed on the second side of the substrate, the array of fourth regions being between adjacent third regions.
H01J 37/244 - Détecteurs; Composants ou circuits associés
G01T 1/24 - Mesure de l'intensité de radiation avec des détecteurs à semi-conducteurs
G01T 1/29 - Mesure effectuée sur des faisceaux de radiations, p.ex. sur la position ou la section du faisceau; Mesure de la distribution spatiale de radiations
A charged particle apparatus configured to project a multi-beam of charged particles along a multi-beam path toward a sample, the charged particle apparatus comprising: a charged particle source configured to emit a charged particle beam toward a sample; a charged particle-optical device configured to project sub-beams of a multi-beam of charged particles along the multi-beam path toward the sample, the sub-beams of the multi-beam of charged particles derived from the charged particle beam; a tube surrounding the multi-beam path configured to operate at a first potential difference from a ground potential; and a support configured to support the sample at a second potential difference from the ground potential, the first potential difference and the second potential difference having a difference so as to accelerate the multi-beam of charged particles towards the sample; wherein the first potential difference is greater than the second potential difference.
Disclosed is a method for measuring a parameter of interest from a target and associated apparatuses. The method comprises obtaining measurement acquisition data relating to measurement of a target on a production substrate during a manufacturing phase; obtaining a calibration correction database and/or a trained model having been trained on said calibration correction database, operable to correct for effects in the measurement acquisition data; correcting for effects in the measurement acquisition data using first correction data from said calibration correction database and/or using said trained model so as to obtain corrected measurement data and/or a corrected parameter of interest which is/are corrected for at least said effects; and updating said calibration correction data and/or said trained model with said corrected measurement data and/or corrected parameter of interest.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
63.
OPERATING A METROLOGY SYSTEM, LITHOGRAPHIC APPARATUS, AND METHODS THEREOF
A method includes detecting data associated with a patterning device and/or a lithographic apparatus, performing an action from a plurality of actions when a determination not to proceed is made, and performing the action on the patterning device and/or a lithographic apparatus.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
Disclosed is a pupil shaping arrangement for obtaining a defined pupil intensity profile for a metrology illumination beam configured for use in a metrology application. The pupil shaping arrangement comprises an engineered diffuser (ED) having a defined far-field profile configured to impose said defined pupil intensity profile on said metrology illumination beam. The pupil shaping arrangement may further comprise a multimode fiber (MMF) and be configured to reduce spatial coherence of coherent radiation.
Methods and apparatus for characterizing a semiconductor manufacturing process performed on a substrate. First data is obtained associated with fingerprint data of the substrate measured after a first processing step. Second data is obtained associated with fingerprint data of the substrate measured after a second processing step. A statistical model is used to decompose the first and second data into a first class of fingerprint components mutually correlating between the first and second data and a second class of fingerprint components not mutually correlating between the first and second data. At least one of the first class fingerprint of components and the second class of fingerprint components are used to characterize the semiconductor manufacturing process.
Disclosed herein is a non-transitory computer readable medium that has stored therein a computer program, wherein the computer program comprises code that, when executed by a computer system, instructs the computer system to perform a method for generating synthetic distorted images, the method comprising: obtaining an input set that comprises a plurality of distorted images; determining, using a model, distortion modes of the distorted images in the input set; generating a plurality of different combinations of the distortion modes; generating, for each one of the plurality of combinations of the distortion modes, a synthetic distorted image in dependence on the combination; and including each of the synthetic distorted images in an output set.
The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.
A substrate restraining system comprising: a substrate table and a plurality of circumferentially arranged restrainers each comprising a spring, wherein the spring has a proximal end and a distal end, wherein the distal end of the spring is radially displacable, and wherein a base of the proximal end of the spring is fixed to the substrate table at a fixing location.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p.ex. mandrins, pièces de serrage, pinces
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
69.
CHARGED PARTICLE-OPTICAL DEVICE, CHARGED PARTICLE APPARATUS AND METHOD
A method for projecting a charged particle multi-beam toward a sample comprises manipulating respective sub-beams of a charged particle multi-beam using a control lens array comprising a plurality of control lenses for the respective sub-beams; controlling the control lens array to manipulate the sub-beams such that the sub-beams are shaped by respective apertures of a beam shaping aperture array such that less than a threshold current of charged particles of each sub-beam passes through the respective apertures of the beam shaping aperture array, down-beam of the control lens array, comprising a plurality of apertures for the respective sub-beams; and controlling the control lens array to manipulate the sub-beams such that at least the threshold current of at least a proportion of the sub-beams passes through the respective apertures of the beam shaping aperture array.
Disclosed is a method for measuring alignment on an alignment mark, and associated apparatuses. The method comprises illuminating the alignment mark with illumination comprising at least one wavelength; capturing the scattered radiation scattered from the alignment mark as a result of said illumination step, and determining at least one position value for said alignment mark from an angularly resolved representation of said scattered radiation, wherein said alignment mark, or a feature thereof, is smaller than said at least one wavelength in at least one dimension of a substrate plane.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
A dark field metrology device includes an objective lens arrangement and a zeroth order block to block zeroth order radiation. The objective lens arrangement directs illumination onto a specimen to be measured and collects scattered radiation from the specimen, the scattered radiation including zeroth order radiation and higher order diffracted radiation. The dark field metrology device is operable to perform an illumination scan to scan illumination over at least two different subsets of the maximum range of illumination angles; and simultaneously perform a detection scan which scans the zeroth order block and/or the scattered radiation with respect to each other over a corresponding subset of the maximum range of detection angles during at least part of the illumination scan.
G02B 21/10 - Condensateurs donnant un éclairage sur fond noir
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
72.
LIGHT SOURCES AND METHODS OF CONTROLLING; DEVICES AND METHODS FOR USE IN MEASUREMENT APPLICATIONS
Provided are light sources and methods of controlling them, and devices and methods for use in measurement applications, particularly in metrology, for example in a lithographic apparatus. The methods and devices provide mechanisms for detection and/or correction of variations in the light source, in particular stochastic variations. Feedback or feedforward approaches can be used for the correction of the source and/or the metrology outputs. An exemplary method of controlling the spectral output of a light source which emits a time-varying spectrum of light includes the steps of: determining at least one characteristic of the spectrum of light emitted from the light source; and using said determined characteristic to control the spectral output.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
An improved method of defect classification is disclosed. An improve method comprises obtaining an inspection image, obtaining layout data associated with the image, obtaining a probability map derived from the layout data, wherein the probability map identifies a probability of a first type of defect occurring in a region of the layout data, identifying a defect in the inspection image occurring at a first location, and classifying the defect based on the probability map and the first location.
G06V 10/22 - Prétraitement de l’image par la sélection d’une région spécifique contenant ou référençant une forme; Localisation ou traitement de régions spécifiques visant à guider la détection ou la reconnaissance
A laser beam metrology system (500) configured to co-operate with a laser beam system that is configured to sequentially direct a first laser beam pulse and a second laser beam pulse (430) to a target along two independent optical paths, the laser beam metrology system comprising a beam steering device (470) and a detection system (510). A laser beam system comprising the laser beam metrology system and a EUV source is also described.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01B 11/02 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur
76.
HIERARCHICAL CLUSTERING OF FOURIER TRANSFORM BASED LAYOUT PATTERNS
Apparatuses, systems, and methods for grouping a plurality of patterns extracted from image data are disclosed. In some embodiments, the method for grouping the patterns comprises receiving the image data including the plurality of patterns that represent features to be formed on a portion of a wafer. The method also comprises separating the plurality of patterns after Fourier Transform into multiple sets of patterns. The method further comprises performing, to a respective set of patterns, a hierarchical clustering to obtain a plurality of subsets of patterns by recursively evaluating features related to similarity between patterns within the respective set of patterns.
G06V 10/762 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant le regroupement, p.ex. de visages similaires sur les réseaux sociaux
G06T 5/10 - Amélioration ou restauration d'image en utilisant le filtrage dans le domaine non spatial
G06V 10/44 - Extraction de caractéristiques locales par analyse des parties du motif, p.ex. par détection d’arêtes, de contours, de boucles, d’angles, de barres ou d’intersections; Analyse de connectivité, p.ex. de composantes connectées
G06V 10/74 - Appariement de motifs d’image ou de vidéo; Mesures de proximité dans les espaces de caractéristiques
77.
PATTERNING DEVICE DEFECT DETECTION SYSTEMS AND METHODS
Since a mask check wafer can utilize a different process than a production wafer, a high-contrast illumination setting with lower pupil fill ratio (PFR) that leads to a reduction of the productivity of the scanner can be utilized. By selecting a high-contrast illumination setting, which is different than that used on a production wafer, an improved ratio of particle printability to stochastic defects can be achieved. In combination, or instead higher dose resist can be utilized. This allows longer exposure of the wafer, such that the impact of photon shot noise is reduced, also resulting in an improved ratio of particle printability to stochastic defects. As a result, the particle printability can be enhanced further without leading to an excessive amount of stochastic defects. Because of this, the number of sites, and therefore the throughput, of a charged particle inspection and analysis can be significantly improved.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
Disclosed herein is a method of reducing a sample charging effect in a scanning electron microscope (SEM) image, the method comprising: obtaining a first SEM image of a target feature on a sample from a first electron beam scan in a first scanning direction; obtaining a second SEM image of the target feature on the sample from a second electron beam scan in a second scanning direction different from the first scanning direction; aligning the first SEM image and the second SEM image; and generating an output image based a combination of the first SEM image and the second SEM image.
G06T 7/33 - Détermination des paramètres de transformation pour l'alignement des images, c. à d. recalage des images utilisant des procédés basés sur les caractéristiques
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
79.
PATTERNING PARAMETER DETERMINATION USING A CHARGED PARTICLE INSPECTION SYSTEM
A method of obtaining focus and dose data that requires no special marks and that uses images of in-die features is described. A focus/dose matrix wafer is created. Dimensions such as critical dimension (CD), CD uniformity (CDU), edge placement error (EPE), etc., at in-die locations are measured using a charged particle inspection system having a large field of view. Machine learning or regression methods are used to determine a relationship between focus and dose and the measured data. The same dimensions can then be measured on a production wafer and the relationship can be utilized to determine the focus and dose for the production wafer.
Disclosed is a method of determining a substrate deformation metric relating to at least one substrate, the substrate deformation metric describing deformation across the at least one substrate. The method comprises obtaining alignment data relating to measurement of a plurality of structures on said substrate using a plurality of illumination conditions; and determining substrate deformation metric values for the substrate deformation metric which minimizes the number of basis vectors which are required to expand dispersion due to structure deformation of said plurality of structures.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
81.
CONTROLLING ABERRATION IN AN OPTICAL SYSTEM, A METROLOGY SYSTEM, LITHOGRAPHIC APPARATUS, AND METHODS THEREOF
A method includes determining optical aberrations of an optical system, identifying an illumination profile that compensates for the optical aberrations of the optical system, and curing a layer of optical cement of an optical device using a modulated energy beam to achieve the identified illumination profile.
G02B 27/00 - Systèmes ou appareils optiques non prévus dans aucun des groupes ,
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G03F 7/16 - Procédés de couchage; Appareillages à cet effet
82.
SYSTEM AND METHOD FOR DISTRIBUTED IMAGE RECORDING AND STORAGE FOR CHARGED PARTICLE SYSTEMS
Apparatuses, systems, and methods for distributed image recording and storage for charged particle tools are provided. In some embodiments, a system may include a first storage of a data center, the first storage configured to store a plurality of images acquired from a plurality of scanning charged particle microscope (SCPM) tools; an image hub server of the data center, the image hub server configured to: receive a first query from an application for a location of a first image generated by a first SCPM tool of the plurality of SCPM tools; determine that the location of the first image is the first storage; and transfer the first image from the first storage to the application for inspection analysis of the first image.
An optical apparatus is disclosed, the apparatus comprising an optical element having a reflective surface for reflecting incident radiation in a beam path, and at least one sensor configured to sense radiation corresponding to a temperature of a respective portion of a backside surface of the optical element. Also disclosed is a method of controlling a temperature of a reflective surface of an optical element in a lithographic apparatus.
G01K 11/12 - Mesure de la température basée sur les variations physiques ou chimiques, n'entrant pas dans les groupes , , ou utilisant le changement de couleur, de translucidité ou de réflectance
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
84.
OPTICAL ELEMENT FOR GENERATION OF BROADBAND RADIATION
A monolithic optical element for generating broadband radiation upon receiving input radiation at an input end of the optical element is disclosed, the optical element including: a hollow core region for guiding the input radiation along a longitudinal axis of the optical element towards an output end of the optical element; a cladding region surrounding the core region along the longitudinal axis and including transversally arranged micro-structures configured to provide non-linear optical behavior to the optical element causing the generation of the broadband radiation; and a supporting region surrounding the cladding region along the longitudinal axis of at least part of the optical element, wherein the supporting region has a transversal dimension which is sufficiently large to render the at least part of the optical element substantially rigid.
A fluid handling system for wetting a substrate irradiated by radiation. The fluid handling system include a first device to confine a first liquid to a first space between the first device and the substrate. The first device includes a first liquid supply member to provide the first liquid to the first space and an extraction member to remove liquid. The fluid handling system further includes a second device including a second liquid supply member to provide a second liquid to a second space between the second device and the substrate, wherein there is a gap on the surface of the substrate between the first and second liquids. The fluid handling system is configured to provide the second liquid to the second space without removing any liquid from the second space to form a liquid layer, and is configured to provide the first and second liquids on the substrate simultaneously.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
There is described a connection assembly (24) for a high-pressure liquid metal supply system used in an EUV light source comprising a monolithic block, wherein the monolithic block includes: at least one connection (21) for connecting to a reservoir (18,19) configured to hold liquid metal: interior passages (25) configured to fluidly connect the at least one connection with at least two liquid metal outlets/inlets (22, 23): at least two freeze valves (15,16,17) configured to block a passage by solidifying liquid metal therein. Also described is a liquid metal storage assembly including such a connection assembly, a lithography apparatus including such a liquid metal storage assembly or such a connection assembly, as well as the use of such assemblies or apparatus in a lithographic apparatus or method.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p.ex. utilisant la génération d'un plasma
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
87.
AN INSPECTION TOOL, METHOD AND LITHOGRAPHIC APPARATUS
A tool for assessing a hole property of one or more holes in a component of a lithographic apparatus, the tool including: an assessment substrate; a fluid supply configured to supply a jet of fluid from each of the one or more holes to a first surface of the assessment substrate, wherein the fluid is supplied at a fluid temperature such that the one or more jets of fluid cause local temperature variations in at least part of the assessment substrate; and an infrared sensor configured to sense a temperature distribution of the assessment substrate in dependence on the local temperature variations.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
88.
METHOD FOR MODELING MEASUREMENT DATA OVER A SUBSTRATE AREA AND ASSOCIATED APPARATUSES
Disclosed is a method for determining a process correction for at least a first process of a lithographic process, comprising at least the first process performed on at least a first substrate using at least a first apparatus and a second process performed on at least said first substrate using at least a second apparatus, where a correction actuation capability of the first apparatus differs from the second apparatus, comprising: obtaining metrology data relating to said first substrate; modeling said metrology data using a first model, the model being related to said first apparatus; and controlling said first process based on the modeled metrology data; the modeling step and/or an additional processing step comprises distributing a penalty in a performance parameter across said first process and said second process such that the distributed penalties in the performance parameter are within their respective specifications of the performance parameter.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
89.
METHOD OF PATTERN SELECTION FOR A SEMICONDUCTOR MANUFACTURING RELATED PROCESS
A method and apparatus for selecting patterns for training or calibrating models related to semiconductor manufacturing. The method includes obtaining a first set of patterns; representing each pattern of the first set of patterns in a representation domain, the representation domain corresponding to electromagnetic functions; and selecting a second set of patterns from the first set of patterns based on the representation domain.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G06F 30/39 - Conception de circuits au niveau physique
A measuring apparatus has at least two radiation sources arranged to illuminate a measuring region of a surface of a sample, the at least two sources configured to illuminate the measuring region along at least two illumination beam paths at different angles of incidence relative to a surface normal of the surface, a detector device configured to detect at least two scattered radiation images of surface sections in the illuminated measuring region at a predetermined viewing angle relative to the surface normal of the surface, portions of the scattered radiation received by the detector device, which portions are formed in each case by the illumination in one of the illumination beam paths, in each case having a common spatial frequency, and an evaluation device configured to determine at least one roughness feature of the surface sections from the at least two scattered radiation images.
G01B 11/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la rugosité ou l'irrégularité des surfaces
G01N 21/47 - Dispersion, c. à d. réflexion diffuse
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
G01N 21/94 - Recherche de souillures, p.ex. de poussières
91.
SYSTEM AND METHOD FOR DETERMINING LOCAL FOCUS POINTS DURING INSPECTION IN A CHARGED PARTICLE SYSTEM
Apparatuses, systems, and methods for determining local focus points (LFPs) on a sample are provided. In some embodiments, a controller including circuitry may be configured to cause a system to perform selecting a first plurality of resist pattern designs; performing a plurality of process simulations using the first plurality of resist pattern designs; identifying a hotspot that corresponds to a resist pattern design based on results of the performed process simulations; determining focus-related characteristics that correspond to a plurality of candidate resist patterns, wherein the plurality of candidate resist pattern designs is a subset of the first plurality of resist pattern designs and the subset is selected based on the identified hotspot; and determining locations of a plurality of LFPs based on the generated focus-related characteristics.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p.ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p.ex. la microscopie électronique à balayage [SEM]
A method for configuring a semiconductor manufacturing process, the method comprising: obtaining a plurality of first values of a first parameter based on successive measurements associated with a first operation of a process step in the semiconductor manufacturing process; using a causal convolutional neural network to determine a predicted value of a second parameter based on the first values; and using the predicted value of the second parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.
G05B 13/02 - Systèmes de commande adaptatifs, c. à d. systèmes se réglant eux-mêmes automatiquement pour obtenir un rendement optimal suivant un critère prédéterminé électriques
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns, the actuator system including a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.
H01J 37/26 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions
H01J 37/02 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p.ex. pour y subir un examen ou un traitement - Détails
H01J 37/15 - Réglage mécanique externe de composants électronoptiques ou ionoptiques
H01J 37/22 - Dispositifs optiques ou photographiques associés au tube
H01J 37/244 - Détecteurs; Composants ou circuits associés
H01J 37/28 - Microscopes électroniques ou ioniques; Tubes à diffraction d'électrons ou d'ions avec faisceaux de balayage
A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
G01N 21/956 - Inspection de motifs sur la surface d'objets
95.
ALIGNMENT METHOD AND ASSOCIATED ALIGNMENT AND LITHOGRAPHIC APPARATUSES
A method of identifying one or more dominant asymmetry modes relating to asymmetry in an alignment mark, the method includes obtaining alignment data relating to measurement of alignment marks on at least one substrate using a plurality of alignment conditions; identifying one or more dominant orthogonal components of the alignment data, the one or more dominant orthogonal components including a number of orthogonal components which together sufficiently describes variance in the alignment data; and determining an asymmetry mode as dominant if it corresponds to an expected asymmetry mode shape which best matches one of the one or more dominant orthogonal components. Alternatively, the method includes, for each known asymmetric mode: determining a sensitivity metric; and determining an asymmetry mode as dominant if the sensitivity metric is above a sensitivity threshold.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
96.
ON SYSTEM SELF-DIAGNOSIS AND SELF-CALIBRATION TECHNIQUE FOR CHARGED PARTICLE BEAM SYSTEMS
An improved method of performing a self-diagnosis of a charged particle inspection system is disclosed. An improved method comprises triggering a self-diagnosis based on output data of the charged particle inspection system; in response to the triggering of the self-diagnosis, receiving diagnostic data of a sub-system of the charged particle inspection system; identifying an issue associated with the output data based on the diagnostic data of the sub-system; and generating a control signal to adjust an operation parameter of the sub-system according to the identified issue.
Methods and systems for determining a model configured to predict values of physical characteristics (e.g., overlay, CD) associated with a patterned substrate measured using different measurement tools. The method involves obtaining a first set of measured data for a first one or more patterned substrates using a first one or more measurement tools, and reference measurements of a physical characteristic. Also, a second set of measured data and virtual data for a second one or more patterned substrates measured using a second one or more measurement tools is obtained. A set of mapping functions between the second set and the virtual data are generated. The set of mapping functions is used to convert the first set. Then, a model is determined based on the reference measurements and the converted data such that the model predicts values of the physical characteristic that are within an acceptable threshold of the reference measurements.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
98.
METROLOGY TOOL CALIBRATION METHOD AND ASSOCIATED METROLOGY TOOL
Disclosed is a method of determining a correction for a measurement of a target and an associated apparatus. The measurement is subject to a target-dependent correction parameter which has a dependence the target and/or a stack on which the target is comprised. The method comprises obtaining first measurement data relating to a measurement of a fiducial target, said first measurement data comprising at least a first and second set of intensity parameter values: and second measurement data relating to a measurement of the fiducial target, the second measurement data comprising a third set of intensity parameter values. A target-invariant correction parameter is determined from said first measurement data and second measurement data. the target-invariant correction parameter being a component of the target-dependent correction parameter which is not dependent on the target and/or a stack: and the correction is determined from said target-in-variant correction parameter.
G03F 7/00 - Production par voie photomécanique, p.ex. photolithographique, de surfaces texturées, p.ex. surfaces imprimées; Matériaux à cet effet, p.ex. comportant des photoréserves; Appareillages spécialement adaptés à cet effet
A surface treatment device for treating a surface of a substrate support, wherein the surface treatment device comprises a contacting surface that is configured to contact the surface of the substrate support. The contacting surface is configured with at least a first contour with a first centre of curvature and a second contour with a second centre of curvature, wherein the first centre of curvature and the second centre of curvature are non-coincident points.
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p.ex. condensation
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/673 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitement; Appareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants utilisant des supports spécialement adaptés
Disclosed is a method for measuring a target located on a substrate beneath at least one layer. The method comprises exciting said at least one layer with pump radiation comprising at least one pump wavelength, so as to generate an acoustic wave within said at least one layer which reflects of said target thereby generating an acoustic replica of said target at a surface of said substrate and illuminating said acoustic replica with probe radiation comprising at least one probe wavelength and capturing the resultant scattered probe radiation, scattered from the acoustic replica. One or both of said exciting step and said illuminating step comprises generating Surface Plasmon Polaritons (SPPs) on residual topography of said at least one layer resultant from said target.
G03F 9/00 - Mise en registre ou positionnement d'originaux, de masques, de trames, de feuilles photographiques, de surfaces texturées, p.ex. automatique
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