Shin-Etsu Handotai Co., Ltd.

Japon

 
Quantité totale PI 1 284
Rang # Quantité totale PI 1 013
Note d'activité PI 3,4/5.0    515
Rang # Activité PI 1 399
Parent Shin-Etsu Chemical Co., Ltd.
Classe Nice dominante Appareils et instruments scienti...

Brevets

Marques

435 2
0 0
843 4
0
 
Dernier brevet 2024 - Method for manufacturing nitride...
Premier brevet 1983 - Apparatus for chemical etching o...
Dernière marque 2023 - IG-NANA
Première marque 2000 - EP-NANA

Filiales

1 subsidiaries without IP

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Industrie (Classification de Nice)

Derniers inventions, produits et services

2024 Invention Method for manufacturing nitride semiconductor substrate, method for manufacturing hybrid ic, and...
Invention Cylindrical grinding machine and cylindrical grinding method. The present invention provides a cy...
Invention Method for producing joined substrate and method for producing semiconductor device. The present ...
Invention High mobility substrate having δ-doped layer and method for manufacturing high mobility substrate...
Invention Polishing cloth cleaning method. The present invention is a polishing cloth cleaning method in wh...
Invention Method for manufacturing semiconductor substrate, semiconductor substrate, and semiconductor devi...
Invention Epitaxial wafer, soi wafer, and method for manufacturing same. The present invention pertains to ...
Invention Defect evaluation method for semiconductor substrate. The present invention provides a defect eva...
Invention Semiconductor substrate production method, semiconductor substrate, and semiconductor device. The...
2023 Invention Method for producing epitaxial substrate, and epitaxial substrate. The present invention provides...
Invention Micro-led structural body and manufacturing method for same. y1-yx1-x1-xP (0.4≤x≤0.6, 0≤y≤0.5). T...
Invention Method for manufacturing 3c-sic single-crystal epitaxial substrate, method for manufacturing 3c-s...
Invention Substrate for high frequency devices and method for producing same. The present invention provide...
Invention Silicon wafer for epitaxial growth and epitaxial wafer. The present invention is a silicon wafer ...
Invention Micro-led element. y1 − yx1 − x1 − xP (where 0.4 ≤ x ≤ 0.6 and 0 ≤ y ≤ 0.5) is sandwiched between...
Invention Method for evaluating defect position in depth direction of wafer. The present invention is a met...
Invention Heteroepitaxial single-crystal-silicon substrate, epitaxial substrate, semiconductor device, and ...
Invention Method for producing heteroepitaxial substrate. This method for producing a heteroepitaxial subst...
Invention Semiconductor epitaxial substrate manufacturing method, semiconductor epitaxial substrate, and se...
P/S Semiconductor silicon wafers; Semiconductor silicon ingots sold as an integral component of semic...
2022 Invention Nitride semiconductor substrate and manufacturing method therefor. A nitride semiconductor subst...
Invention Epitaxial wafer and production method therefor. An epitaxial wafer production method, including ...
Invention Method for manufacturing nitride semiconductor wafer, and nitride semiconductor wafer. A method ...
Invention Nitride semiconductor substrate and method for manufacturing same. A nitride semiconductor subst...
Invention Method for manufacturing nitride semiconductor substrate. A method for manufacturing a nitride s...
Invention Nitride semiconductor substrate and method for manufacturing the same. A nitride semiconductor s...
Invention Temporarily bonded wafer and method for manufacturing the wafer. A temporarily bonded wafer in w...
Invention Method for producing silicon single crystal. The present invention provides a method for produci...
Invention Substrate for semiconductor device and method for manufacturing the same. The present invention ...
Invention Epitaxial wafer for ultraviolet ray emission device and method for manufacturing the same. An ep...
Invention Method for carrying wafer and wafer-carrying apparatus. The present invention is a method for ca...
Invention Bonded wafer and method for producing bonded wafer. A bonded wafer, wherein an epitaxial wafer h...
Invention Clean room. The present invention is a clean room including a stocker area in which an article m...
Invention Debris determination method. A debris determination method of determining, using an image obtain...
Invention Debris determination method. A debris determination method of determining, from an image obtaine...
Invention Method for forming thermal oxide film on semiconductor substrate and method for producing semicon...
Invention Wafer marking method, method of producing nitride semiconductor device and nitride semiconductor ...
Invention Packaging member for packaging object to be transported between clean rooms, packaging method, an...
Invention Method of manufacturing compound semiconductor bonded substrate and compound semiconductor bonded...
Invention Silicon wafer manufacturing method. The present invention is a silicon wafer manufacturing metho...
Invention Method for producing nitride semiconductor wafer. A method for producing a nitride semiconductor...
Invention Seed substrate for epitaxial growth use and method for manufacturing same, and semiconductor subs...
Invention Method for manufacturing semiconductor wafer. A method for manufacturing a semiconductor wafer, ...
Invention Apparatus for manufacturing single crystal. The present invention is an apparatus for manufactur...
Invention Method for evaluating crystal defects in silicon carbide single crystal wafer. A method for eval...
Invention Method for processing a wafer and wafer. A method for processing a wafer including; surface-grin...
Invention Method for manufacturing epitaxial wafer for ultraviolet ray emission device, method for manufact...
Invention Single crystal pulling apparatus and method for pulling single crystal. The present invention is...
2021 Invention Method for manufacturing bonded wafer, and bonded wafer. A method for manufacturing a bonded waf...
2000 P/S Semiconductor silicon wafers, semiconductor silicon ingots.