Toshiba Materials Co., Ltd.

Japon

 
Quantité totale PI 600
Rang # Quantité totale PI 2 117
Note d'activité PI 3,2/5.0    298
Rang # Activité PI 2 390
Parent Toshiba Corporation

Brevets

Marques

228 0
5 0
367 0
0
 
Dernier brevet 2024 - Silicon nitride sintered body, w...
Premier brevet 1988 - Sputtering target

Derniers inventions, produits et services

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Invention Tungsten wire, and tungsten wire processing method and electrolytic wire using the same. Accordi...
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Invention Scintillator array, method for manufacturing scintillator array, radiation detector, and radiatio...
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Invention Silicon nitride sintered body and wear-resistant member using the same. A silicon nitride sinter...
Invention Silicon nitride sintered body, wear-resistant member, substrate for semiconductor devices, and me...
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Invention Method for producing a heat regenerating material particle. A method may produce a heat regenera...
Invention Method for producing a two-stage heat regenerating cryogenic refrigerator. A method may produce ...
Invention Method for manufacturing ceramic circuit board. According to the embodiment, in a method for man...
Invention Silicon nitride sintered body, wear-resistant member, and method for producing silicon nitride si...
Invention Silicon nitride sintered body, wear-resistant member, and method for manufacturing silicon nitrid...
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Invention Insulating circuit board and semiconductor device in which same is used. According to an embodim...
Invention Insulating circuit board and semiconductor device using same. According to the embodiment, in an...
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2022 Invention Ceramic scribe circuit substrate, ceramic circuit substrate, method for manufacturing ceramic scr...