Silanna UV Technologies Pte Ltd

Singapour

 
Quantité totale PI 92
Rang # Quantité totale PI 14 156
Note d'activité PI 2,9/5.0    113
Rang # Activité PI 6 118

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Dernier brevet 2024 - Metal oxide semiconductor-based ...
Premier brevet 2014 - Optical tuning of light emitting...

Derniers inventions, produits et services

2024 Invention Metal oxide semiconductor-based light emitting device. The techniques described herein relate to...
Invention Methods and material deposition systems for forming semiconductor layers. In embodiments, method...
Invention Epitaxial oxide transistor. The techniques described herein relate to a transistor including a s...
Invention Epitaxial oxide transistor. The techniques described herein relate to a transistor, including a ...
Invention Buried contact layer for uv emitting device. In some embodiments, a light emitting structure com...
Invention Material deposition system equipment maintenance. A material deposition system comprises a growt...
Invention Epitaxial oxide transistor. In some embodiments, the techniques described herein relate to an ep...
2023 Invention Semiconductor device. In some embodiments, the techniques described herein relate to a multilayer...
Invention Semiconductor structure with superlattices. In some embodiments, a semiconductor structure inclu...
Invention Material deposition system equipment maintenance. Methods and systems for material deposition sys...
Invention Oxide compositions and methods of depositing epitaxial layers. In some embodiments, a compositio...
Invention Oxide semiconductor structures and devices. In some embodiments, an optoelectronic semiconductor...
Invention Ultrawide bandgap semiconductor devices including magnesium germanium oxides. Various forms of ...
Invention Epitaxial oxide materials, structures, and devices. The present disclosure provides techniques f...
Invention Semiconductor structure with chirp layer. A semiconductor structure can comprise a plurality of ...
Invention Surface characterization of materials using cathodoluminescence. Methods and systems include gen...
Invention Surface characterization of materials using cathodoluminescence. Methods and systems include gene...
Invention Buried contact layer for uv emitting device. In some embodiments, a light emitting structure comp...
Invention Methods and systems for heating a wide bandgap substrate. Methods and systems of heating a subst...
Invention Epitaxial oxide materials, structures, and devices. In some embodiments, a semiconductor structu...
Invention Optoelectronic device including a superlattice. (1-x)O.
Invention Led with small mesa width. A light emitting device includes a first active layer on a substrate,...
Invention Advanced electronic device structures using semiconductor structures and superlattices. Semicond...
2022 Invention Material deposition system equipment maintenance. Methods and systems for material deposition sy...
Invention Impact ionization light-emitting diodes. Embodiments disclose LEDs that operate using impact ioni...
Invention Epitaxial oxide device with impact ionization. The present disclosure describes epitaxial oxide d...
Invention Method and epitaxial oxide device with impact ionization. The present disclosure describes metho...
Invention Metal oxide semiconductor-based light emitting device. In some embodiments, an optoelectronic se...
Invention Method for heating a wide bandgap substrate by providing a resistive heating element which emits ...
Invention Epitaxial oxide high electron mobility transistor. The present disclosure describes epitaxial ox...
Invention Epitaxial oxide high electron mobility transistor. z comprises a first conductivity type formed v...
Invention Epitaxial oxide integrated circuit. The present disclosure describes epitaxial oxide integrated c...
Invention Epitaxial oxide field effect transistor. n, wherein 0
Invention Epitaxial oxide materials, structures, and devices. In some embodiments, a semiconductor structur...
Invention Epitaxial oxide materials, structures, and devices. z2, wherein x2 is from 0 to 1, wherein y2 is ...
Invention Epitaxial oxide materials, structures, and devices. z1, wherein x1 is from 0 to 1, wherein y1 is ...
Invention Epitaxial oxide materials, structures, and devices. 4 wherein 0≤x2≤1, 0≤y2≤1 and 0≤q2≤1. In some ...
Invention Epitaxial oxide materials, structures, and devices. 3 wherein 0≤x2≤1.
Invention Epitaxial oxide materials, structures, and devices. 4 wherein 0≤x2≤1 and 0≤y2≤1.
Invention Ultrawide bandgap semiconductor devices including magnesium germanium oxides. 2-x are disclosed, ...
Invention Methods and material deposition systems for forming semiconductor layers. Systems and methods for...
2021 Invention Epitaxial oxide materials, structures, and devices. A semiconductor structure can include two or ...
Invention Epitaxial oxide materials, structures, and devices. x1-xyzz where 0≤x≤1, 1≤y≤3, and 2≤z≤4. The se...
Invention Ultrawide bandgap semiconductor devices including magnesium germanium oxides. x1-x2-xx1-x2-xx1-x2...
Invention Methods and systems for heating a wide bandgap substrate. Methods and systems of heating a substr...