Sandisk Technologies LLC

États‑Unis d’Amérique

 
Quantité totale PI 5 683
Rang # Quantité totale PI 177
Note d'activité PI 4/5.0    2 603
Rang # Activité PI 247
Parent SanDisk Corporation

Brevets

Marques

4 839 0
0 0
844 0
0
 
Dernier brevet 2024 - Memory device containing composi...
Premier brevet 1988 - Highly compact eprom and flash e...

Derniers inventions, produits et services

2023 Invention Three-dimensional memory device including low-k drain-select-level isolation structures and metho...
Invention Transistor circuits including fringeless transistors and method of making the same. A lateral ex...
Invention Three-dimensional memory device containing laterally-undulating lateral isolation trenches and me...
Invention Three-dimensional memory device containing etch stop metal plates for backside via structures and...
Invention Three-dimensional memory array with dual-level peripheral circuits and methods for forming the sa...
Invention Three-dimensional memory device including trench bridges and methods of forming the same. A three...
Invention Dynamic word line reconfiguration for nand structure. Technology is disclosed herein reconfigurin...
Invention Non-volatile memory with early dummy word line ramp down after precharge. Non-volatile memory cel...
Invention Non-volatile memory with narrow and shallow erase. In a non-volatile memory, to achieve a shallow...
Invention Early detection of programming failure for non-volatile memory. An apparatus is provided that inc...
Invention Non-volatile memory with one sided phased ramp down after program-verify. In a non-volatile memor...
Invention Non-volatile memory with optimized erase verify sequence. An erase process for a group of non-vol...
Invention Adaptive fail bits threshold number for erasing non-volatile memory. An apparatus is provided tha...
Invention Read pass voltage dependent recovery voltage setting between program and program verify. A memory...
Invention Techniques for checking vulnerability to cross-temperature read errors in a memory device. The me...
Invention A hybrid precharge select scheme to save program icc. A storage device comprises: a non-volatile ...
Invention Memory device containing ferroelectric-spacer-ferroelectric memory elements and method of making ...
2022 Invention Non-volatile memory with optimized operation sequence. A non-volatile memory system separately p...
Invention Loop dependent word line ramp start time for program verify of multi-level nand memory. To reduce...
Invention Field effect transistor with contact via structures that are laterally spaced by a sub-lithograph...
Invention Memory device containing composition-controlled ferroelectric memory elements and method of makin...
Invention Dynamic word line reconfiguration for nand structure. Technology is disclosed herein reconfiguri...
Invention Three-dimensional memory device including trench bridges and methods of forming the same. A thre...
Invention Non-volatile memory with early dummy word line ramp down after precharge. Non-volatile memory ce...
Invention Non-volatile memory with narrow and shallow erase. In a non-volatile memory, to achieve a shallo...
Invention Non-volatile memory with optimized erase verify sequence. An erase process for a group of non-vo...
Invention Three-dimensional memory device including a drain contact etch-stop dielectric layer and methods ...
Invention Early detection of programming failure for non-volatile memory. An apparatus is provided that in...
Invention Non-volatile memory with one sided phased ramp down after program-verify. In a non-volatile memo...
Invention Memory die having a unique storage capacity. The memory die that includes a plurality of memory ...
Invention Adaptive fail bits threshold number for erasing non-volatile memory. An apparatus is provided th...
Invention Three-dimensional memory device including variable thickness semiconductor channels and method of...
Invention Three-dimensional memory device with high contact via density and methods of forming the same. A...
Invention Three-dimensional memory device containing templated crystalline ferroelectric memory elements an...
Invention Non-volatile memory with suspension period during programming. To remedy short term data retenti...
Invention Semiconductor structures including auxetic microstructures and method of forming the same. A sem...
Invention Systems and methods for non-destructive inspection of semiconductor devices using reflective x-ra...
Invention Three-dimensional memory device including capped molybdenum word lines and method of making the s...
Invention Non-volatile memory with short prevention. To prevent loss of data due to a word line to memory ...
Invention Reliability improvement through delay between multi-stage programming steps in non-volatile memor...
Invention Memory device with unique read and/or programming parameters. The memory device includes a plura...
Invention Techniques for checking vulnerability to cross-temperature read errors in a memory device. The m...