Sandisk Technologies LLC

États‑Unis d’Amérique

 
Quantité totale PI 5 686
Rang # Quantité totale PI 180
Note d'activité PI 4/5.0    2 616
Rang # Activité PI 246
Parent SanDisk Corporation

Brevets

Marques

4 829 0
0 0
857 0
0
 
Dernier brevet 2024 - Multi-tier memory device with di...
Premier brevet 1988 - Highly compact eprom and flash e...

Derniers inventions, produits et services

2023 Invention Three-dimensional memory device with backside support pillar structures and methods of forming th...
Invention Persistent memory management. Apparatuses, systems, methods, and computer program products are d...
Invention Method of making a three-dimensional memory device using dual water vapor flow oxidation and appa...
Invention Three-dimensional memory device containing discrete charge storage elements and methods for formi...
Invention Multi-tier memory device with different width central staircase regions in different vertical tie...
Invention Three-dimensional memory device with source line isolation and method of making the same. A memor...
Invention Loop dependent word line ramp start time for program verify of multi-level nand memory. To reduce...
Invention Non-volatile memory with different word line to word line pitches. In a multi-tiered non-volatile...
Invention Three-dimensional memory device containing memory opening monitoring area and methods of making t...
Invention Word line dependent pass voltage ramp rate to improve performance of nand memory. To reduce spike...
Invention Nand memory with different pass voltage ramp rates for binary and multi-state memory. To reduce s...
Invention Erase method for non-volatile memory with multiple tiers. A non-volatile memory system comprises ...
Invention Non-volatile memory with tier-wise ramp down after program-verify. Memory cells are arranged as N...
Invention Nand string read voltage adjustment. An apparatus includes a control circuit configured to connec...
Invention Adaptive gidl voltage for erasing non-volatile memory. An apparatus is provided that includes a b...
2022 Invention Non-volatile memory with reduced word line switch area. A three dimensional non-volatile memory ...
Invention High performance verify techniques in a memory device. The memory device includes at least one m...
Invention Gate-induced drain leakage pre-charge in sub-block mode for three or more tier non-volatile memor...
Invention Non-volatile memory with different word line to word line pitches. In a multi-tiered non-volatil...
Invention Bit line modulation to compensate for cell source variation. Systems and methods for bit line mo...
Invention Preventing erase disturb in nand. Technology is disclosed herein for preventing erase disturb in...
Invention Non-volatile memory with programmable resistance non-data word line. In order to lower the peak ...
Invention Non-volatile memory with sub-planes having individually biasable source lines. To reduce data di...
Invention Erase method for non-volatile memory with multiple tiers. A non-volatile memory system comprises...
Invention Three-dimensional memory device with source line isolation and method of making the same. A memo...
Invention Ppa improvement for voltage mode driver and on-die termination (odt). Systems and methods for im...
Invention High density semiconductor device including integrated controller, logic circuit and memory dies....
Invention Apparatus and methods for bonding pad redistribution layers in integrated circuits. An apparatus...
Invention Semiconductor device having edge seal and method of making thereof without metal hard mask arcing...
Invention Three-dimensional memory device and method of making thereof using selective metal nitride deposi...
Invention Nand fast cyclic redundancy check. The present disclosure relates generally to a method of detec...
Invention End point detection method and apparatus for anisotropic etching using variable etch gas flow. A...
Invention Three-dimensional memory device containing a pillar contact between channel and source and method...
Invention Zq calibration circuit and method for memory interfaces. Systems and methods disclosed herein pr...
Invention Nand string read voltage adjustment. An apparatus includes a control circuit configured to conne...
Invention Sub-block status dependent device operation. A storage device is disclosed herein. The storage d...
Invention Method for dual wavelength overlay measurement with focus at a photoresist top surface and appara...
Invention Dynamic word line boosting during programming of a memory device. The memory device includes a m...
Invention Dual-way sensing scheme for better neighboring word-line interference. A storage device is discl...
Invention Current reference circuit with process, voltage, and wide-range temperature compensation. System...
Invention Precharge scheme during programming of a memory device. The memory device includes at least one ...
Invention Low line-sensitivity and process-portable reference voltage generator circuit. Systems and metho...
Invention Bundle multiple timing parameters for fast slc programming. Technology is disclosed herein for m...
Invention Foggy-fine drain-side select gate re-program for on-pitch semi-circle drain side select gates. A...
Invention Hybrid smart verify for qlc/tlc die. Technology is disclosed herein for smart verify in a memory...