Sandisk Technologies LLC

États‑Unis d’Amérique

 
Quantité totale PI 5 745
Rang # Quantité totale PI 169
Note d'activité PI 4,1/5.0    2 782
Rang # Activité PI 222
Parent SanDisk Corporation

Brevets

Marques

4 952 0
0 0
793 0
0
 
Dernier brevet 2023 - Three-dimensional memory device ...
Premier brevet 1988 - Highly compact eprom and flash e...

Derniers inventions, produits et services

2023 Invention Bonded semiconductor die assembly containing through-stack via structures and methods for making ...
Invention Three-dimensional memory device including discrete charge storage elements and methods of forming...
Invention Modelling and prediction system with auto machine learning in the production of memory devices. ...
2022 Invention Three dimensional memory device containing resonant tunneling barrier and high mobility channel a...
Invention Wafer surface chemical distribution sensing system and methods for operating the same. A CMP syst...
Invention Non-volatile memory with staggered ramp down at the end of pre-charging. In order to inhibit memo...
Invention Soft erase process during programming of non-volatile memory. Programming a plurality of non-vola...
Invention Three-dimensional memory device with word-line etch stop liners and method of making thereof. A t...
Invention Three-dimensional memory device with orthogonal memory opening and support opening arrays and met...
Invention High aspect ratio via fill process employing selective metal deposition and structures formed by ...
Invention Field effect transistors with reduced gate fringe area and method of making the same. A semicondu...
Invention Non-volatile memory with adjusted bit line voltage during verify. A control circuit connected to ...
2021 Invention Memory device that is optimized for operation at different temperatures. A plurality of memory p...
Invention Three-dimensional memory device and method of making the same using differential thinning of vert...
Invention Soft erase process during programming of non-volatile memory. Programming a plurality of non-vol...
Invention Techniques for erasing the memory cells of edge word lines. A method of erasing memory cells in ...
Invention Wafer surface chemical distribution sensing system and methods for operating the same. A CMP sys...
Invention Field effect transistors with reduced gate fringe area and method of making the same. A semicond...
Invention Non-volatile memory with staggered ramp down at the end of pre-charging. In order to inhibit mem...
Invention Three-dimensional memory device with word-line etch stop liners and method of making thereof. A ...
Invention Systems and methods for staggering read operation of sub-blocks. A memory device with one or mor...
Invention Edge word line data retention improvement for memory apparatus with on-pitch semi-circle drain si...
Invention Proactive edge word line leak detection for memory apparatus with on-pitch semi-circle drain side...
Invention Adaptive semi-circle select gate bias. A memory apparatus and method of operation are provided. ...
Invention Data conversion with data path circuits for use in double sense amp architecture with fractional ...
Invention Systems and methods for retaining inflight data during a power loss event. Memory devices, or me...
Invention Pseudo multi-plane read methods and apparatus for non-volatile memory devices. An apparatus incl...
Invention Systems and methods for dynamically sensing a memory block. A memory device that dynamically adj...
Invention Computation of discrete fourier transformation (dft) using non-volatile memory arrays. A non-vol...
Invention Transfer latch tiers. Read and write circuitry, described herein, comprises data latches, each d...
Invention Positive tco voltage to dummy select transistors in 3d memory. Technology is disclosed for apply...
Invention Three-dimensional memory device with discrete charge storage elements and methods for forming the...
Invention Non-volatile memory with adjusted bit line voltage during verify. A control circuit connected to...
Invention Variable programming voltage step size control during programming of a memory device. The memory...
Invention Smart re-use of parity buffer. Technology is disclosed herein for efficient use of volatile memo...
Invention Double sense amp and fractional bit assignment in non-volatile memory structures. A method for p...