SiCrystal GmbH

Allemagne

 
Quantité totale PI 37
Rang # Quantité totale PI 37 614
Note d'activité PI 2,4/5.0    37
Rang # Activité PI 20 347
Classe Nice dominante Produits chimiques destinés à l'...

Brevets

Marques

28 1
0 0
7 1
0
 
Dernier brevet 2024 - Method and apparatus for the the...
Premier brevet 2001 - Method for growing sic single cr...
Dernière marque 2021 - SICRYSTAL
Première marque 2021 - SICRYSTAL

Industrie (Classification de Nice)

Derniers inventions, produits et services

2024 Invention Method and apparatus for the thermal post-treatment of at least one sic volume monocrystal. Ther...
Invention Sublimation system and method of growing at least one single crystal of a semiconductor material....
Invention Sublimation system and method of growing at least one single crystal. The present invention rela...
Invention System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing...
2023 Invention Production method for an sic volume monocrystal of inhomogeneous screw dislocation distribution a...
Invention Production method for an sic volume monocrystal of homogeneous screw dislocation distribution and...
Invention Method for producing a bulk sic single crystal with improved quality using a sic seed crystal wit...
Invention Silicon carbide substrate and method of growing sic single crystal boules. The present invention...
2022 Invention System for efficient manufacturing of a plurality of high-quality semiconductor single crystals, ...
Invention Chamfered silicon carbide substrate and method of chamfering. The present invention relates to a...
Invention Monocrystalline sic substrates having an asymmetrical geometry and method of producing same. The...
Invention Monocrystalline sic substrates having an asymmetrical geometry and method of producing same. The ...
Invention Method for producing an sic volume single crystal, homogenous screw dislocation distribution, and...
Invention Production process for a sic bulk single crystal having inhomogenous screw dislocation distributi...
2021 Invention Silicon carbide substrate and method of growing sic single crystal boules. −3, from the mean conc...
Invention Sic crystalline substrates with an optimal orientation of lattice planes for fissure reduction an...
Invention Sic crystals with an optimal orientation of lattice planes for fissure reduction and method of pr...
Invention Crystal structure orientation in semiconductor semi-finished products and semiconductor substrate...
P/S Chemicals for industrial and scientific purposes, namely, polycrystalline or monocrystalline mate...
P/S Chemical products for industrial and scientific purposes, namely polycrystalline or monocrystall...
2020 Invention System for horizontal growth of high-quality semiconductor single crystals by physical vapor tran...
Invention System for efficient manufacturing of a plurality of high-quality semiconductor single crystals b...
Invention Production method and growth arrangement for producing a bulk sic single crystal by arranging at ...
2019 Invention Chamfered silicon carbide substrate and method of chamfering. The present invention relates to a ...
2018 Invention Silicon carbide substrate and method of growing sic single crystal boules. 3 from the mean concen...
Invention Silicon carbide substrate and method of growing sic single crystal boules. The present invention ...
2015 Invention Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped sili...
2014 Invention Monocrystalline sic substrate with a non-homogeneous lattice plane course. A method is used for p...
2013 Invention Physical vapor transport growth system for simultaneously growing more than one sic single crysta...
2011 Invention Production method for an sic volume monocrystal with a non-homogeneous lattice plane course and a...
Invention Production method for an sic volume monocrystal with a homogeneous lattice plane course and a mon...
2010 Invention Production method for a bulk sic single crystal with a large facet and monocrystalline sic substr...
2002 Invention Device having a foil-lined crucible for the sublimation growth of an sic single crystal. A device...
Invention Seed crystal holder with lateral mount for an sic seed crystal. A seed crystal holder holds a SiC...
Invention Method for the sublimation growth of an sic single crystal, involving heating under growth pressu...
2001 Invention Method for growing an α-sic bulk single crystal. An α-SiC bulk single crystal is formed from an S...
Invention Method for growing sic single crystals. A method is described for growing at least one silicon ca...
Invention Device and method for producing at least one sic single crystal. A device for producing a silicon...