LATERAL DIODES IN STACKED TRANSISTOR TECHNOLOGIES

Register USPTO Patent
Application Number 17448384
Status Pending
Filing Date 2021-09-22
First Publication Date 2023-03-23
Publication Date 2023-03-23
Owner INTEL CORPORATION (USA)
Inventor
  • Thomson, Nicholas A.
  • Kar, Ayan
  • Orr, Benjamin
  • Kolluru, Kalyan C.
  • Jack, Nathan D.
  • Morrow, Patrick
  • Huang, Cheng-Ying
  • Kuo, Charles C.

Abstract

Integrated circuits including lateral diodes. In an example, diodes are formed with laterally neighboring source and drain regions (diffusion regions) configured with different polarity epitaxial growths (e.g., p-type and n-type), to provide an anode and cathode of the diode. In some such cases, dopants may be used in the channel region to create or otherwise enhance a PN or PIN junction between the diffusion regions and the semiconductor material of a channel region. The channel region can be, for instance, one or more nanoribbons or other such semiconductor bodies that extend between the oppositely-doped diffusion regions. In some cases, nanoribbons making up the channel region are left unreleased, thereby preserving greater volume through which diode current can flow. Other features include skipped epitaxial regions, elongated gate structures, using isolation structures in place of gate structures, and/or sub-fin conduction paths that are supplemental or alternative to a channel-based conduction path.

IPC Classes  ?

  • H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
  • H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
  • H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
  • H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
  • H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
  • H01L 29/786 - Thin-film transistors
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 29/66 - Types of semiconductor device
  • H01L 21/8238 - Complementary field-effect transistors, e.g. CMOS