An electronic device includes a doped semiconductor substrate of a first conductivity type. First and second doped wells are provided, separated from each other by trench isolation, within the doped semiconductor substrate. At least one first region and at least one second region are respectively located in the first and second doped wells, with each first and second region having a doping level higher than a doping level of the first and second doped wells. The trench isolation penetrates into the first and second doped wells and extends laterally between the first region and second region. A third region laterally extends between the first and second doped wells at a location under the insulating trench. The third region has a doping level lower than the doping level of the first and second doped wells.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 29/74 - Thyristor-type devices, e.g. having four-zone regenerative action
An electronic device includes a doped semiconductor substrate of a first conductivity type. A first doped well of a second conductivity type opposite to the first conductivity type extends into the doped semiconductor substrate from a surface thereof. A second doped well of the first conductivity type is located in the first well. A third electrically-insulating well is located in the second well. A fourth doped well of the first conductivity type is located in the third well. First, second, and third doped regions of the first conductivity type are respectively located in the doped semiconductor substrate, the second doped well and the fourth doped well. The first, second, and third doped regions have doping levels greater than a doping level of the doped semiconductor substrate. A fourth doped region the second conductivity type is located in the fourth doped well adjacent the second doped region.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
An embodiment method for estimating a missing or incorrect value in a table of values generated by a photosite matrix comprises a definition of a zone of the table comprising the value to be estimated and other values, referred to as neighboring values, and an estimation of the value to be estimated based on the primary neighboring values and the weight associated with these primary neighboring values, wherein a weight of each neighboring value, referred to as primary neighboring value, of the same colorimetric component as that of the missing or incorrect value to be estimated, is determined according to differences between neighboring values disposed on an axis and neighboring values disposed parallel with this axis and positioned in relation to this axis on the same side as the primary neighboring value for which the weight is determined.
A clock generator circuit includes an oscillator circuit coupled to a bias circuit. The bias circuit includes a current mirror, third and fourth transistors, and a cascode transistor. The current mirror includes a reference transistor and a set of copy transistors that are programmable. The third transistor has a source connected to a cold spot, a drain and a gate connected to this drain. The fourth transistor has a source connected to the drain of the third transistor, a drain, and a gate connected to that drain. The cascode transistor has a source connected to a drain of at least one of the copy transistors, a drain, and a gate connected to the gate of the fourth transistor. The gates of the fourth transistor and the cascode transistor are thicker than the gates of the reference transistor, each copy transistor, and the third transistor.
An OFDM (orthogonal frequency division multiplexing) transmitter includes an inverse fast Fourier transform circuit, which, in operation, generates, based on digital input data, a complex time-varying digital signal having real and imaginary components; and a multiplexer adapted to generate a time-multiplexed digital signal by time-multiplexing one or more of the real components with one or more of the imaginary components.
The present description concerns a method of manufacturing a first wafer, intended to be assembled to a second wafer by molecular bonding, including the successive steps of: forming a stack of layers at the surface of a substrate; and successive chemical etchings of the edges of said layers from the layer of the stack most distant from the substrate, across a smaller and smaller width.
G06T 5/50 - Image enhancement or restoration by the use of more than one image, e.g. averaging, subtraction
H04N 23/741 - Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
8.
Method, system and device to test a plurality of devices by comparing test results of test chains of the plurality of devices
A method tests a plurality of devices, each device including a test chain having a plurality of positions storing test data. The testing includes comparing test data in a last position of the test chain of each of the devices. The test data in the test chains of the devices is shifted forward by one position. The shifting includes writing test data in the last position of a test chain to a first position in the test chain. The comparing and the shifting are repeated until the test data in the last position of each test chain when the testing is started is shifted back into the last position of the respective test chain. The plurality of devices may have a same structure and a same functionality.
G01R 31/3185 - Reconfiguring for testing, e.g. LSSD, partitioning
G01R 31/3177 - Testing of logic operation, e.g. by logic analysers
G06F 11/267 - Reconfiguring circuits for testing, e.g. LSSD, partitioning
G06F 11/16 - Error detection or correction of the data by redundancy in hardware
G06F 11/18 - Error detection or correction of the data by redundancy in hardware using passive fault-masking of the redundant circuits, e.g. by quadding or by majority decision circuits
A method tests at least three devices, each device including a test chain having a plurality of positions storing test data. The testing includes comparing test data in a last position of the test chain of each of the devices, and shifting test data in the test chains of each of the devices and storing a result of the comparison in a first position of the test chains of each of the devices. The comparing and the shifting and storing are repeated until all the stored test data has been compared. The at least three devices may have a same functionality and a same structure.
G01R 31/3185 - Reconfiguring for testing, e.g. LSSD, partitioning
G06F 11/16 - Error detection or correction of the data by redundancy in hardware
G06F 11/267 - Reconfiguring circuits for testing, e.g. LSSD, partitioning
G01R 31/319 - Tester hardware, i.e. output processing circuits
G01R 31/3193 - Tester hardware, i.e. output processing circuits with comparison between actual response and known fault-free response
G06F 11/18 - Error detection or correction of the data by redundancy in hardware using passive fault-masking of the redundant circuits, e.g. by quadding or by majority decision circuits
10.
Method of adjusting a read margin of a memory and corresponding device
Methods and devices for adjusting a read threshold voltage of bitlines are provided. One such method includes adjusting a read threshold voltage of bitlines coupled to memory points of a memory circuit. The read threshold voltage is initially set to a first value. First data are written in the memory points and second data are read from the memory points. The second data are compared to the first data, and the threshold voltage is decreased by a second value in response to a comparison error of one of the second data with the corresponding first data.
A system has an array of pixels including a plurality of active pixels and a plurality of dark reference pixels and processing circuitry coupled to the array of pixels. The processing circuitry sequentially computes, for each of a plurality of pairs of sets of dark reference pixels of the plurality of dark reference pixels, absolute differences in dark signal levels of the pair of sets of dark reference pixels. The absolute differences in dark signal levels are accumulated and a noise level of the dark reference pixels of the array of pixels is estimated based on the accumulated absolute differences. The system may be employed in, for example, a back-up camera of an automobile or a mobile phone.
STMicroelectronics Razvoj Polprevodnikov d.o.o. (Slovenia)
Inventor
Stiglic, Maksimiljan
Suhadolnik, Nejc
Houdebine, Marc
Abstract
A transponder communicates with a reader using active load modulation. The transponder includes a digital phase locked loop (DPLL), which, in operation, generates an active load modulation (ALM) carrier clock synchronized to carrier clock of the reader. Between transmission of data frames, the DPLL is placed in a lock mode of operation in which a feedback loop of the DPLL is closed. Within a transmitted data frame having a duration, the DPLL is placed, for the duration of the transmitted data frame, in a hold mode of operation in which the feedback loop is opened. A phase of the ALM carrier clock is adjusted at least once during the duration of the transmitted data frame.
H03D 3/24 - Modifications of demodulators to reject or remove amplitude variations by means of locked-in oscillator circuits
H04L 7/033 - Speed or phase control by the received code signals, the signals containing no special synchronisation information using the transitions of the received signal to control the phase of the synchronising-signal- generating means, e.g. using a phase-locked loop
H04B 5/00 - Near-field transmission systems, e.g. inductive loop type
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
H03C 3/09 - Modifications of modulator for regulating the mean frequency
H03L 7/099 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
A reader is adapted to wirelessly exchanging information with a wireless apparatus. The reader includes a signal generator configured to generate a modulation signal. An emitter/receptor stage is configured to be driven by the modulation signal. A switched-mode power supply is configured to power the emitter/receptor stage. The switched-mode power supply includes a power switch controlled in function of the modulation signal.
H04B 5/00 - Near-field transmission systems, e.g. inductive loop type
G08C 17/02 - Arrangements for transmitting signals characterised by the use of a wireless electrical link using a radio link
H02M 3/335 - Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
A connector includes a first antenna configured to transmit first signals in a first direction and with a first polarization, a second antenna coupled to the first antenna and configured to transmit second signals in a second direction that is parallel to the first direction and with a second polarization that is orthogonal to the first polarization, and a third antenna coupled to the first and second antennas and configured to transmit third signals in a third direction that is parallel to the first direction and with the first polarization, wherein the second antenna is positioned between the first and third antennas.
H01Q 21/06 - Arrays of individually energised antenna units similarly polarised and spaced apart
H01Q 21/24 - Combinations of antenna units polarised in different directions for transmitting or receiving circularly and elliptically polarised waves or waves linearly polarised in any direction
H04B 5/00 - Near-field transmission systems, e.g. inductive loop type
H01P 5/02 - Coupling devices of the waveguide type with invariable factor of coupling
H01Q 21/08 - Arrays of individually energised antenna units similarly polarised and spaced apart the units being spaced along, or adjacent to, a rectilinear path
H01Q 21/28 - Combinations of substantially independent non-interacting antenna units or systems
H01Q 1/52 - Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
STMICROELECTRONICS INTERNATIONAL N.V. (Netherlands)
STMICROELECTRONICS SA (France)
STMICROELECTRONICS (CROLLES 2) SAS (France)
Inventor
Urard, Pascal
Cacho, Florian
Huard, Vincent
Tripathi, Alok Kumar
Abstract
A flip flop includes a data input, a clock input, a test chain input, a test chain output, a monitoring circuit, and an alert transmission circuit. The monitoring circuit is adapted to generate an alert if the time between arrival of a data bit and a clock edge is less than a threshold. The alert transmission circuit is adapted to apply during a monitoring phase an alert level to the test chain output in the event of an alert generated by the monitoring circuit, and to apply the alert level to the test chain output when an alert level is received at the test chain input.
Commissariat à I'Energie Atomique et aux Energies Alternatives (France)
STMicroelectronics (Crolles 2) SAS (France)
STMicroelectronics SA (France)
Inventor
Trochut, Séverin
Monfray, Stéphane
Boisseau, Sébastien
Abstract
The invention concerns a measurement unit including: an electric ambient energy recovery generator; an element of capacitive storage of the electric energy generated by the generator; an electric battery; a first branch coupling an output node of the generator to a first electrode of the capacitive storage element; a second branch coupling a first terminal of the battery to the first electrode of the capacitive storage element; and an active circuit capable of transmitting a radio event indicator signal each time the voltage across the capacitive storage element exceeds a first threshold, wherein, in operation, the capacitive storage element simultaneously receives a first charge current originating from the generator via the first branch and a second charge current originating from the battery via the second branch.
A photonic integrated circuit includes a first insulating region encapsulating at least one metallization level, a second insulating region at least partially encapsulating a gain medium of a laser source, and a stacked structure placed between the two insulating regions. The stacked structure includes a first polycrystalline or single-crystal silicon layer, a second polycrystalline or single-crystal silicon layer, an intermediate layer optically compatible with the wavelength of the laser source and selectively etchable relative to silicon and that separates the first layer from a first portion of the second layer, and the gain medium facing at least one portion of the first layer. The first layer, the intermediate layer, and the first portion of the second layer form an assembly containing a resonant cavity and a waveguide, which are optically coupled to the gain medium, and a second portion of the second layer containing at least one other photonic component.
An OFDM (orthogonal frequency division multiplexing) transmitter includes an inverse fast Fourier transform circuit, which, in operation, generates, based on digital input data, a complex time-varying digital signal having real and imaginary components; and a multiplexer adapted to generate a time-multiplexed digital signal by time-multiplexing one or more of the real components with one or more of the imaginary components.
Methods and systems for scrubbing confidential insurance account information are provided. According to embodiments, a scrubbing server can receive a request to scrub confidential insurance data that includes the contents of an insurance account information database and an indication of the category of confidential data stored in the database. The scrubbing server can scrub the valid data contained in the received database, replacing confidential information with “scrambled” data that is not confidential. The scrubbing server can transmit the contents of the scrubbed database back to the requesting party.
H04L 9/06 - Arrangements for secret or secure communications; Network security protocols the encryption apparatus using shift registers or memories for blockwise coding, e.g. D.E.S. systems
20.
Method for estimating the diffusion length of metallic species within a three-dimensional integrated structure, and corresponding three-dimensional integrated structure
A three-dimensional integrated structure may include two assembled integrated circuits respectively including two metallic lines, and at least two cavities passing through one of the integrated circuits and opening onto two locations respectively in electrical contact with the two metallic lines. The cavities may be sized to place a measuring apparatus at the bottom of the cavities, and in electrical contact with the two locations.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
A Silicon On Insulator current source array includes input control for receiving a control voltage, a first reference input for receiving a first reference voltage, and a second reference input for receiving a second reference voltage. A chain of several Silicon On Insulator MOS transistors, of the same type, have control electrodes all connected to the input control, first conduction electrodes are all connected to the first reference input, and second conduction electrodes are respectively connected to the second reference input through several load circuits respectively configured to be traversed by several currents when the several transistors are ON upon application of the control voltage on the input control. An input bias is coupled to a semiconductor well located below an insulating buried layer located below the chain of transistors for receiving a biasing voltage difference.
H03K 3/012 - Modifications of generator to improve response time or to decrease power consumption
H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
22.
Power management circuit for a self-powered sensor
A power management circuit including, between a first terminal intended to be connected to an electric power generation source and a second terminal intended to be connected to a load to be powered, a linear regulator and a circuit capable of activating the linear regulator when the power supplied by said source is greater than a first threshold.
A reconfigurable hierarchical computer architecture having N levels, where N is an integer value greater than one, wherein said N levels include a first level including a first computation block including a first data input, a first data output and a plurality of computing nodes interconnected by a first connecting mechanism, each computing node including an input port, a functional unit and an output port, the first connecting mechanism capable of connecting each output port to the input port of each other computing node; and a second level including a second computation block including a second data input, a second data output and a plurality of the first computation blocks interconnected by a second connecting means for selectively connecting the first data output of each of the first computation blocks and the second data input to each of the first data inputs and for selectively connecting each of the first data outputs to the second data output.
G06F 15/78 - Architectures of general purpose stored program computers comprising a single central processing unit
G06F 13/36 - Handling requests for interconnection or transfer for access to common bus or bus system
G06F 15/173 - Interprocessor communication using an interconnection network, e.g. matrix, shuffle, pyramid, star or snowflake
G06F 15/80 - Architectures of general purpose stored program computers comprising an array of processing units with common control, e.g. single instruction multiple data processors
G06F 9/38 - Concurrent instruction execution, e.g. pipeline, look ahead
G06F 13/368 - Handling requests for interconnection or transfer for access to common bus or bus system with decentralised access control
STMicroelectronics International N.V. (Netherlands)
STMicroelectronics SA (France)
Inventor
Kohli, Nishu
Wilson, Robin M.
Abstract
Memory circuitry includes memory components operable in response to first edges of an internal clock. The memory circuitry also includes internal clock generating circuitry to generate the internal clock in response to a system clock. The first edges of the internal clock are generated in response to both a rising and a falling edge of the system clock.
G11C 8/00 - Arrangements for selecting an address in a digital store
G11C 8/18 - Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
25.
Radio frequency signal transmission method and device
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
UNIVERSITE DE BORDEAUX (France)
Inventor
Belot, Didier
Deval, Yann
Rivet, Francois
Abstract
A method for generating a radio frequency signal, wherein a signal to be transmitted is decomposed into a weighted sum of periodic basic signals of different frequencies.
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
UNIVERSITE DE BORDEAUX (France)
Inventor
Belot, Didier
Deval, Yann
Rivet, Francois
Abstract
A device for generating a signal, including: a balun; and a circuit capable of summing up, on a first access terminal of the balun, currents representative of signals received on first input terminals of the device, and on a second access terminal of the balun, currents representative of signals received on second input terminals of the device.
An integrated circuit may include at least one MOS transistor having a sigmoid response. The at least one MOS transistor may include a substrate, a source region, a drain region, a gate region, and insulating spacer regions on either side of the gate region. The substrate may include a first region situated under the gate region between the insulating spacer regions. At least one of the source and drain regions may be separated from the first region of the substrate by a second region of the substrate situated under an insulating spacer region, which may be of a same type of conductivity as the first region of the substrate.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
H01L 27/07 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
28.
Adaptive multi-stage slack borrowing for high performance error resilient computing
STMicroelectronics International N.V. (Netherlands)
STMicroelectronics SA (France)
Inventor
Parthasarathy, Chittoor
Chawla, Nitin
Chatterjee, Kallol
Urard, Pascal
Abstract
Adaptive scaling digital techniques attempt to place the system close to the timing failure so as to maximize energy efficiency. Rapid recovery from potential failures is usually by slowing the system clock and/or providing razor solutions (instruction replay.) These techniques compromise the throughput. This application presents a technique to provide local in-situ fault resilience based on dynamic slack borrowing. This technique is non-intrusive (needs no architecture modification) and has minimal impact on throughput.
Commissariate a l'energie atomique et aux energies alternatives (France)
STMicroelectronics SA (France)
Inventor
Fenouillet-Beranger, Claire
Fonteneau, Pascal
Abstract
An integrated circuit includes a transistor, an UTBOX buried insulating layer disposed under it and a ground plane disposed under the layer. A well is disposed under the plane and a first trench is at the periphery of the transistor and extends through the layer into the well. There is a substrate under the well and a p-n diode on a side of the transistor. The diode comprises first and second zones of opposite doping and the first zone is configured for electrical connection to a first electrode of the transistor. The first and second zones are coplanar with the plane and a second trench for separating the first and second zones. The second trench extends through the layer into the plane to a depth less than an interface between the plane and the well. There is a third zone under the second trench forming a junction between the zones.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
30.
ON-SOI integrated circuit comprising a thyristor (SCR) for protection against electrostatic discharges
COMMISSARIAT Á L'ÉNERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (France)
STMicroelectronics SA (France)
Inventor
Fenouillet-Beranger, Claire
Fonteneau, Pascal
Abstract
An integrated circuit includes an UTBOX insulating layer under and plumb with first and second electronic components, and corresponding ground planes and oppositely-doped wells made plumb with them. The wells contact with corresponding ground planes. A pair of oppositely doped bias electrodes, suitable for connecting corresponding bias voltages, contacts respective wells and ground planes. A third electrode contacts the first well. A first trench isolates one bias electrode from the third electrode and extends through the layer and into the first well. A second trench isolates the first bias electrode from one component. This trench has an extent that falls short of reaching an interface between the first ground plane and the first well.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
31.
Method for producing an electronic device by assembling semi-conducting blocks and corresponding device
At least three electrically conducting blocks are disposed within an isolating region; and at least two of them are mutually separated and capacitively coupled by a part of the isolating region. At least two of them, being semiconductor, have opposite types of conductivity or identical types of conductivity, but with different concentrations of dopants, and these are in mutual contact by one of their sides. The mutual arrangement of these blocks within the isolating region, their type of conductivity and their concentration of dopants form at least one electronic module. Some of the blocks define input and output blocks.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 21/77 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/43 - Electrodes characterised by the materials of which they are formed
32.
Method for estimating the diffusion length of metallic species within a three-dimensional integrated structure, and corresponding three-dimensional integrated structure
A three-dimensional integrated structure may include two assembled integrated circuits respectively including two metallic lines, and at least two cavities passing through one of the integrated circuits and opening onto two locations respectively in electrical contact with the two metallic lines. The cavities may be sized to place a measuring apparatus at the bottom of the cavities, and in electrical contact with the two locations.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
33.
Process for producing at least one deep trench isolation
A method for producing at least one deep trench isolation in a semiconductor substrate including silicon and having a front side may include forming at least one cavity in the semiconductor substrate from the front side. The method may include conformally depositing dopant atoms on walls of the cavity, and forming, in the vicinity of the walls of the cavity, a silicon region doped with the dopant atoms. The method may further include filling the cavity with a filler material to form the at least one deep trench isolation.
A device and corresponding fabrication method includes a vertical stack having an intermediate layer between a lower region and an upper region. The intermediate layer is extended by a protection layer. The vertical stack has a free lateral face on which the lower region, the upper region and the protection layer are exposed.
An integrated capacitive device includes an electrically conducting comb, at least some of whose teeth form first electrodes of capacitors, and electrically conducting fingers extending between the teeth of the comb so as to form second electrodes of the capacitors. The device includes a first finger-teeth set having a single reference finger forming a reference capacitor having a reference capacitive value, at least one second finger-teeth set including several fingers, the reference finger and the number of fingers of the second finger-teeth set or sets forming a geometric series with ratio two. At least one additional set includes a single additional finger forming, with at least one tooth of the comb, an additional capacitor having an additional capacitive value substantially equal to half the reference capacitive value.
A link device for three-dimensional integrated structure may include a module having a first end face designed to be in front of a first element of the structure, and a second end face designed to be placed in front of a second element of the structure. The two end faces may be substantially parallel, and the module including a substrate having a face substantially perpendicular to the two end faces and carrying an electrically conducting pattern formed in a metallization level on top of the face and enclosed in an insulating region. The electrically conducting pattern may include a first end part emerging onto the first end face and a second end part emerging onto the second end face and connected to the first end part.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
37.
Matrix imaging device comprising at least one set of photosites with multiple integration times
A method for controlling a pixel may include first and second photosites, each having a photodiode and a charge-transfer transistor, a read node, and an electronic read element, all of which are common to all the photosites. The method may include an accumulation of photogenerated charges in the photodiode of the first photosite during a first period, an accumulation of photogenerated charges in the photodiode of the second photosite during a second period shorter than the first period, a selection of the signal corresponding to the quantity of charges accumulated in the photodiode of a photosite having the highest unsaturated intensity or else a saturation signal, and a digitization of the selected signal.
Centre National de la Recherche Scientifique (CNRS) (France)
Inventor
Voicila, Adrian
Declercq, David
Fossorier, Marc
Verdier, François
Urard, Pascal
Abstract
i), each intermediate node being linked to a single first node and to several second nodes by way of a connection scheme. The string of K initial symbols is encoded by using the said code characteristics and a string of N encoded symbols is obtained, respectively subdivided into NI sub-symbols belonging respectively to mathematical sets whose orders are less than q, according to a subdivision scheme representative of the connection scheme (Π).
Switch including a terminal of a first type and at least two terminals of a second type, and a number of circuits capable of ensuring exclusive connection of one of the terminals of the second type to the terminal of the first type as a function of a set of control orders wherein the terminal of the first type is connected to a common point by a first circuit; each terminal of the second type is connected to the common point by a second circuit, with each second circuit including a portion that is magnetically coupled to the first circuit, a static switch mounted in parallel with the portion and capable of being controlled in the “off” state in order to connect the terminal of the first type to the terminal of the second type associated with the second circuit in question.
H04B 1/48 - Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
An integrated circuit (IC) cell may include first and second semiconductor regions, and parallel electrically conductive lines extending above the first and second semiconductor regions. The IC cell may further include electrically conductive line contacts electrically connected to the parallel electrically conductive lines, and may include at least one first line contact between the first semiconductor region and a corresponding end of the IC cell, and at least one second line contact between the first semiconductor region and the second semiconductor region. Adjacent ones of the electrically conductive lines may be respectively coupled to one of the at least one first line contact and to one of the at least one second line contact.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 23/528 - Layout of the interconnection structure
41.
Device and method for processing an analogue signal
Device for processing an analogue signal, comprising an analogue-digital converter with a pipelined architecture having an offset, and compensation means configured to compensate for the said offset, the said compensation means comprising digital correction means configured to correct the integer portion of the offset based on the digital signal delivered by the analogue-digital converter, and analogue correction means included in the last stage of the analogue-digital converter and configured to correct the decimal portion of the offset.
A dynamic biasing circuit of the substrate of a MOS power transistor may include a first switch configured to connect the substrate to a current source which forward biases the intrinsic source-substrate diode of the transistor, when the gate voltage of the transistor turns the transistor on. The current source may include a stack of diodes in the same conduction direction as the intrinsic diode between the substrate and a supply voltage.
A controlled oscillator includes, connected in parallel, a capacitor configured to be tuneable based upon a first signal, an inductor, and an active impedance. The active impedance is formed by a pair of cross-coupled transistors connected so as to produce a negative resistive component at the terminals of the active impedance. Circuitry produces a degeneracy tuneable by a second signal in the cross-coupled pair, such that the cross-coupled pair produces a capacitive component tuneable based upon the second signal at the terminals of the active impedance.
H03B 5/12 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
H03K 3/282 - Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator astable
Centre National de la Recherche Scientifique (CNRS) (France)
Inventor
Cathelin, Andrea
Thuries, Stéphane
Godet, Sylvain
Tournier, Eric
Graffeuil, Jacques
Abstract
i-1, processing means (MT) able to receive said phases and arranged so as to deliver an amplitude-modulated output signal (SG) whose envelope exhibits a succession of regions respectively delimited by zones of zero amplitude (ZA, ZB), each amplitude-modulated signal part situated in one of said regions forming a pulse of the ultra wideband type (IMP) whose central frequency is equal to said first frequency and whose width depends on the value of the phase increment, and control means (MC) able to regulate the operation of the digital synthesis device so as to selectively deliver one or more pulses of the ultra wideband type.
A low-pass filter, including: between a first terminal and a second terminal, a series association of a first resistor, of a second resistor, and of a first amplifier; in parallel with the second resistor, a series association of a second amplifier and of a first capacitor; a second capacitor between an input of the first amplifier and a third terminal of application of a reference voltage; and a third capacitor between the second terminal and the third terminal.
A logarithmic analog to digital conversion method for an analog input signal includes a logarithmic amplification with progressive compression of the input signal delivering a sequence of several secondary analog signals. The trend of the values of at least some of the secondary signals is a function of the values of the analog input signal including regions corresponding to a linear trend of the secondary signals as a function of that of the input signal expressed in a logarithmic scale. The method also includes a comparison of at least some of the secondary signals of the sequence with a common reference signal whose value lies within each of regions, supplying a thermometric code information item, and a generation of a first digital word from the thermometric code information item.
An electronic device may include a controlled generator configured to generate an adjustable frequency clock signal at at least one part of an integrated circuit coupled to the output of the controller generator and including at least one transistor having a gate of less than forty-five nanometers in length. The electronic device may include determination circuitry configured to determine the temperature of the at least one part of the integrated circuit, and drive circuitry coupled to the determination circuitry and configured to control the generator to increase the frequency of the clock signal when the temperature increases.
A method for capturing a sequence of video images, using an imager including an estimation of the parameters of a model of global motion between successive images. The method may include measurement of local motions on edges of the images, with the estimation of the parameters of the global motion model performed using the result of the measurement of local motions on the edges of the images.
STMicroelectronics Asia Pacific Pte Ltd. (Singapore)
Inventor
Lebowsky, Fritz
Huang, Yong
Abstract
A method of processing a digital image which includes at least one contour zone, including a contour zone sharpness processing. The sharpness processing includes a conversion of the cues regarding level of pixels of the contour zone into initial main cues, lying between zero and a main value dependent on the amplitude of the contour, a sharpness sub-processing performed on these initial main cues so as to obtain final main cues, and a conversion of the final main cues into final cues regarding levels.
A resistive element having two vertical resistive portions placed in two holes formed in the upper portion of a substrate and a horizontal resistive portion placed in a buried cavity connecting the bottoms of the holes.
A method is for decoding a block of N information items encoded with an error correction code and mutually correlated. The method includes carrying out a first decorrelation of the N information items of a block is carried out, and storing the block decorrelated. The method also includes a performing a processing for decoding a group of P information items of the block, and decorrelating at least part of the P decoded information items. The processing for decoding the group of P information items and the decorrelation are repeated with different successive groups of P information items of the block until the N information items of the block have been processed, until a decoding criterion is satisfied.
H03M 13/03 - Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
52.
Integrated circuit and corresponding method of processing a multitype radio frequency digital signal
An integrated circuit includes input circuitry for receiving a radio frequency digital signal, output circuitry capable of delivering a radio frequency analog signal, and a processing stage coupled between the input circuitry and the output circuitry and including several processing channels in parallel. Each processing channel may include a voltage switching block the input of which is coupled to the input circuitry and a transmission line substantially of the quarter-wave type at the frequency of the radio frequency analog signal coupled in series between the output of the voltage switching block and the output circuitry.
A flip-flop may include a first master stage for latching data, a second slave stage for latching data, and an input multiplexer circuit receiving, as input, data to be latched in the flip-flop. The multiplexer may have single clock phase. The first master stage may be clocked based upon a clock phase, whereas the second stage may be clocked based upon another clock phase.
H03K 3/289 - Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable of the master-slave type
54.
Method for manufacturing a monolithic oscillator with bulk acoustic wave (BAW) resonators
A method of adjustment on manufacturing of a monolithic oscillator including circuit elements and a BAW resonator, this method including the steps of: a) forming the circuit elements and the resonator and electrically connecting them; b) covering the resonator with a frequency adjustment layer; c) measuring the output frequency of the oscillator; d) modifying the thickness of the frequency adjustment layer to modify the output frequency of the oscillator.
The generation of a chip identifier supporting at least one integrated circuit, which includes providing a cutout of at least one conductive path by cutting the chip, the position of the cutting line relative to the chip conditioning the identifier.
H01L 23/58 - Structural electrical arrangements for semiconductor devices not otherwise provided for
56.
Circuit for discharging an electrical load, power output stage comprising such a discharge circuit for the control of plasma display cells; and related system and method
An embodiment of a discharge circuit comprises an output circuit with one output connected to an electrical load to absorb a discharge current given by the load when a logic signal commands a discharge of the load. The discharge circuit also comprises a control circuit to give the output circuit an appropriate control signal so that a slope of an output potential of the output circuit diminishes gradually when the logic signal commands a discharge of the load. Limiting the slope of the output potential gradually (and not suddenly) may limit the electromagnetic radiation generated by these variations.
H03B 1/00 - GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS - Details
57.
Non-volatile memory comprising means for distorting the output of memory cells
The present invention relates to a non-volatile memory comprising a memory array comprising functional memory cells and non-functional memory cells linked to at least one non-functional word line. A word line address decoder comprises a special decoding section linked to the non-functional word line, for selecting the non-functional word line when a functional word line is read-selected, such that non-functional memory cells are selected simultaneously with the functional memory cells, and distort the reading of the functional memory cells. Application particularly to integrated circuits for smart cards.
H03M 13/00 - Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
A support wafer made of silicon wafer comprising, on a first surface a porous silicon layer having protrusions, porous silicon pillars extending from the porous silicon layer to the second surface of the wafer, in front of each protrusion. Layers constituting a fuel cell can be formed on the support wafer.
a of the collector. The substrate includes a lightly doped lateral zone and a highly doped central zone. The dopant species in the zone of the substrate are electrically inactive.
Centre National de la Recherche Scientifique (France)
Inventor
Cathelin, Andreia
Frappe, Antoine
Kaiser, Andreas
Abstract
The digital delta-sigma modulator includes a signal input for receiving digital samples of N bits, and a digital filter connected to the signal input. The digital filter performs addition/subtraction and integration operations according to a redundant arithmetic coding for delivering digital filtered samples. A quantizer performs a nonexact quantization operation so as to deliver digital output samples of n bits, with n being less than N. The input of the quantizer is connected within the digital filter.
The integrated circuit may include at least one electronic protection circuit for protecting against at least one electrostatic discharge and being able to discharge the overvoltage current generated by the electrostatic discharge. The electronic protection circuit includes a controlled short-circuiting switch embodied in CMOS technology including a CMOS technology TRIAC or a CMOS technology thyristor arranged in anti-parallel with a CMOS technology diode, and a triggering circuit for controlling the short-circuiting switch.
H02H 3/22 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage of short duration, e.g. lightning
63.
Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor
A region is locally modified so as to create a zone that extends as far as at least part of the surface of the region and is formed from a material that can be removed selectively with respect to the material of the region. The region is then covered with an insulating material. An orifice is formed in the insulating material emerging at the surface of the zone. The selectively removable material is removed from the zone through the orifice so as to form a cavity in place of the zone. The cavity and the orifice are then filled with at least one electrically conducting material so as to form a contact pad.
A self-cooled electronic component comprising a vertical monolithic circuit, in which the vertical monolithic circuit is electrically connected in series with a Peltier cooler so that the D.C. current flowing through the circuit supplies the cooler and in which the circuit and the cooler are placed against each other so that the cold surface of the cooler is in thermal contact with the circuit.
A Micro Electro Mechanical Systems resonance device includes a substrate, and an input electrode, connected to an alternating current source having an input frequency. The device also includes an output electrode, and at least one anchoring structure, connected to the substrate. The device further includes a vibratile structure connected to an anchoring structure by at least one junction, having a natural acoustic resonant frequency. The vibration under the effect of the input electrode, when it is powered, generates, on the output electrode, an alternating current wherein the output frequency is equal to the natural frequency. The vibratile structure and/or the anchoring structure includes a periodic structure. The periodic structure includes at least first and second zones different from each other, and corresponding respectively to first and second acoustic propagation properties.
A memory structure has an access transistor connected in series with a programmable resistive element, wherein the programmable resistive element comprises on a semiconductor substrate; an insulated layer with a cavity comprising: a first layer lining the lateral surfaces and the bottom of the said cavity and impermeable to the diffusion of metal; a second layer made of porous material on the said first layer; a third layer of metallic material allowing to realize a contact electrode susceptible to spread within the said formed porous material of the second layer. Diffusion of metallic ions within the said second layer is controlled by the joint action of an electric field and temperature. A manufacturing process is also described.
H01L 45/00 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
67.
Video surveillance method and system based on average image variance
The present disclosure relates to a video surveillance method comprising steps of a video camera periodically capturing an image of a zone to be monitored, analyzing the image to detect a presence therein, and of the video camera transmitting the image only if a presence has been detected in the image.
A channel equalizer arranged to receive a data signal encoded by a plurality of amplitude levels, the circuitry including a filter having a plurality of taps, each tap generating an output signal based on a coefficient, an input for receiving an error signal for adapting the coefficients, and an output for outputting a filtered signal; and blind error generation circuitry arranged to generate the error signal, the blind error generation circuitry including: error estimating circuitry arranged to estimate the error of the filtered signal based on maximum likelihood; and adding circuitry coupled to the error estimating circuitry and to the output of the filter and arranged to add at least part of the filtered signal to the error estimated by the error estimating circuitry to generate the error signal.
An image sensor formed of an array of pixels, each pixel including a photodiode coupled between a first reference voltage and a first switch, the first switch being operable to connect the photodiode to a first node; a capacitor arranged to store a charge accumulated by the photodiode, the capacitor being coupled between a second reference voltage and a second node; a second switch coupled between the first and second nodes, the second switch being operable to connect the capacitor to the first node; and read circuitry coupled for reading the voltage at the second node.
A method and a circuit for controlling a power recovery stage of a plasma display panel including a resonant circuit of at least one inductive element and one capacitive element, wherein the capacitive element is precharged to half a supply voltage of the display panel.
A method of reading voltages from an image sensor having an array of pixels, each pixel having at least one photodiode connectable to a storage node, the method having: controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode above a first threshold to the storage node at the start and end of a first integration period and reading a first voltage at the storage node of each pixel in the row at the end of the first integration period; controlling of the pixels in the row to transfer charge accumulated in the photodiode above a second threshold to the storage node at the start and end of a second integration period longer than the first integration period, and reading a second voltage value at the storage node of each pixel in the row at the end of the second integration period; controlling each pixel in a row of pixels to transfer charge accumulated in the photodiode to the storage node at the end of a third integration period longer than the first and second integration periods; comparing for each pixel in the row, the first voltage values with a reference voltage; and based on the comparison, for each pixel in the row, performing one of: determining a pixel output value based on the first and/or second voltage values; and reading a third voltage value at the end of the third integration period, and determining a pixel output value based on the second and/or third voltage values.
A micro scale includes one substrate forming a first zone constituting a first terminal, one conducting vibrating beam which has two opposite ends affixed on two supporting areas on the substrate, the conductive beam forming a second terminal; wherein the conductive beam is made of polymer gel having metallic microparticles in low quantity so as to avoid any contamination of a biological material to measure, the density of the metallic microparticles being high enough to achieve electrical conduction of the second terminal. A manufacturing process of such a micro scale circuit is also provided.
G01N 9/02 - Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity by measuring weight of a known volume
Centre National de la Recherche Scientifique (France)
Inventor
Belot, Didier
Cathelin, Andreia
Shirakawa, Alexandre Augusto
Pham, Jean-Marie
Jary, Pierre
Kerherve, Eric
Abstract
A Lamb wave resonator includes a piezoelectric layer, and a first electrode against a first face of the piezoelectric layer. The first electrode includes fingers and a contact arm, with each finger including a first side in contact with the contact arm and two other sides parallel to one another. Portions of the piezoelectric layer are at least partially etched between the two fingers to form a recess. The fingers are spaced apart from one another by a distance W calculated according to the following equation:
f is a resonance frequency of the Lamb wave resonator.
H01L 41/04 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details of piezo-electric or electrostrictive elements
74.
Method for notch filtering a digital signal, and corresponding electronic device
An electronic device, includes sigma-delta modulation circuit to operate with a clock signal and having output circuitry to deliver a digital data signal. First circuitry delivers a radiofrequency transposition signal. A notch filter includes radiofrequency digital-to-analog conversion blocks, having first input circuitry coupled to the output circuitry. Second input circuitry receives the radiofrequency transposition signal. Second output circuitry delivers a radiofrequency analog signal. Digital delay circuitry is controlled by the clock signal and includes a delay block between the two first input circuits. The frequency of a notch of the notch filter is related to the value of the delay from the delay block. Summation circuitry sums the radiofrequency signals.
A passive contactless integrated circuit includes an electrically programmable non-volatile data memory (MEM), a charge accumulation booster circuit for supplying a high voltage necessary for writing data in the memory. The integrated circuit includes a volatile memory point for memorizing an indicator flag, and circuitry for modifying the value of the indicator flag when the high voltage reaches a critical threshold for the first time after activating the booster circuit.
H04Q 5/22 - Selecting arrangements wherein two or more subscriber stations are connected by the same line to the exchange with indirect connection, i.e. through subordinate switching centre the subordinate centre not permitting interconnection of subscribers connected thereto
A spiral structure having at least one planar winding in at least one first conductive level to form at least one inductive element, wherein the winding is surrounded with a conductive plane and at least one track is formed in a second conductive level and has two ends connected by conductive vias to the plane of the first level, at diametrically opposite positions with respect to the center of the winding.
Embodiments of the invention concern a method for transmitting digital messages through a microprocessor monitoring circuit of specific type and integrated to a microprocessor, each message including an identifier and consisting of several groups of successive and juxtaposed bits divided into segments. The method consists in successively transmitting segments associated with a first group corresponding to the identifier and comprising a fixed number of bits; with second groups, at least one of the second group comprising a fixed number of bits depending on the type of monitoring circuit, the number of other second groups being independent of the type of monitoring circuit; with a third group comprising a number of bits greater than one; and with fourth groups comprising each a number of bits greater than one, the number of fourth groups depending on the identifier and on the type of monitoring circuit.
A method is for transferring data from a source target to a destination target in a network. The method includes sending at least one request packet for the destination target, with the request packet containing information relating to a first address where data are located and a second address where data are to be stored. Moreover, at least one transaction request is sent to the source target, with the read request being elaborated from information contained in the request packet. The source target transfers the data located at the first address to the second address.
G06F 15/16 - Combinations of two or more digital computers each having at least an arithmetic unit, a program unit and a register, e.g. for a simultaneous processing of several programs
G06F 15/167 - Interprocessor communication using a common memory, e.g. mailbox
79.
Electrolytic organic glass, its manufacturing process and device comprising it
The invention relates to a solid electrolyte, to a process for its manufacture and also to devices comprising it.
z, in which v, w, x, y and z are atomic percentages with 0≦v≦40, 5≦w≦50, x>12, 10≦y≦40, 1≦z≦70, and 95%≦v+w+x+y+z≦100%.
The electrolyte of the invention finds application in the field of electronics and microbatteries in particular.
An electronic device includes N inputs to receive R input data, R being able to take values from 1 to N, and N outputs. A configurable shift circuit is coupled between the N inputs and N outputs and has a cascade of shift stages, each shift stage comprising at least N controllable multiplexers. Each multiplexer includes first and second elementary inputs respectively coupled to a first input and a second input taken from among the N inputs so as to, on command, not shift a data item present on the first elementary input and shift a data item present on the second elementary input by an elementary shift value dependent on a rank of the shift stage, a direction of the shift being identical for each multiplexer. Control circuitry controls the multiplexers to deliver the R input data on R outputs.
4, and of oxygen into the plasma reactor, the flow rate of the gases in the plasma reactor being on the order of from 10% to 25% of the gas flow rate during the etch step.
A digitizer for a digital receiver system includes an input terminal to receive a modulated analog input voltage signal, and an output terminal to provide an output voltage signal being a digital conversion of the input voltage signal. A comparator circuit has an output coupled to the output terminal and includes an operational amplifier having a first input terminal coupled to the input terminal. A threshold generator circuit is between the input terminal and a second input terminal of the at least one operational amplifier, to provide a tunable voltage reference signal thereto. The threshold generator circuit includes a thresholding circuit to determine a threshold voltage value of the modulated analog input voltage signal, and a tunable voltage reference circuit coupled to the thresholding circuit to generate the tunable voltage reference signal as a function of the threshold voltage value of the modulated analog input voltage signal.
Metal contacts are self-positioned on a wafer of semiconductor product. Respective placement areas for a metal contact are determined by a selective deposition of a growth material over a region of the substrate surface (for example, through epitaxial growth). The growth material is surrounded by an insulating material. The grown material is then removed to form a void in the insulating material which coincides with the desired location of the metal contact. This removal of the grown material exposes the region on the substrate surface. Conductive material is then deposited to fill the void and thus form the metal contact directly with the region of the substrate surface.
A method is for fabricating an integrated circuit formed from a substrate and including several metallic interconnection levels in which, in a same plane parallel to the main plane of the substrate, is a plurality of thick horizontal metallic interconnection lines, as well as one or several MIM capacitors fitted with metallic electrodes that are orthogonal to the main plane of the substrate.
An image processing system includes a memory for storing data associated with pixels of images, with the pixels having spatial coordinates in an image coordinate system having first and second axes; a processing device including a processor which processes the associated data; and an interface device which accesses in memory addresses associated with pixels of a block of pixels. In the interface device, access information is received indicating a base memory address, information regarding the dimensions of the block along the axes of the image coordinate system, and a storage method. At least one access rule is selected from multiple rules as a function of the storage method. The memory is accessed at the addresses associated with the pixels in the block, by applying the selected rule starting from the base address and taking into account the dimensions of the block.
A system is for transmitting data in a network and includes emitter nodes, each including a transmitter for transmitting requests for data transmission. The system may also include a receiver node receiving the data transmission from the emitter nodes and including a first memory for storing data transmitted by each emitter node, a second memory for storing the requests, and a transmitter. The data may be transmitted from the emitter nodes to the receiver node when memory space is available in the first memory to receive data. The transmitter of the receiver node may transmit to each emitter node an acknowledgement message when memory space is available in the first memory to receive at least a portion of the data transmitted. Each emitter node may establish a communication link with the receiver node and transmits the data based upon the acknowledgement message. The communication link may be locked until all data is transmitted.
A system for transmitting data includes a transmitter module, a receiver module and a channel provided with a flow control link between the transmitter and receiver modules. The channel provides a first control signal from the transmitter module to the receiver module, and a second control signal from the receiver module to the transmitter module for initiating data transmission. The transmitter or receiver module includes a synchronizer for synchronizing the first and second control signals.
G06F 3/00 - Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
H03K 11/00 - Transforming types of modulation, e.g. position-modulated pulses into duration-modulated pulses
88.
Method and device for decoding blocks encoded with an LDPC code
A method is for decoding a succession of blocks of data encoded with an LDPC code. The method includes storing the blocks temporarily and successively in an input memory before decoding the blocks successively in an iterative manner, the input memory having a memory size for storage of at least two blocks, and defining a current indication representative of a threshold number of iterations for decoding a current block. The method includes decoding the current block until a decoding criterion is satisfied or so long as a number of iterations performed for decoding the current block has not reached the current indication while at least one of a first subsequent block and a part of a second subsequent block are stored in the input memory, and updating the current indication for decoding the first subsequent block as a function of the number of iterations performed for decoding the current block.
H03M 13/00 - Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
89.
Method and device for layered decoding of a succession of blocks encoded with an LDPC code
The metrics matrix may include at least one particular layer including at least one particular column having several metrics cues, respectively, situated in different rows. For the particular layer, the updating of the channel cue is associated with the particular column involving at each iteration one updated metric cue selected from all the metrics cues of the particular column. The row of the selected metric cues may change at each iteration.
H03M 13/00 - Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
A coupled Lamb wave resonator filter includes first and second Lamb wave resonators. The first Lamb wave resonator includes a first resonant layer, and first and second electrodes on opposite sides of the first resonant layer. The second Lamb wave resonator includes a second resonant layer, and third and fourth electrodes on opposite sides of the second resonant layer. One of the sides of the first resonant layer belongs to a plane parallel to a plane corresponding to one of the sides of the second resonant layer. Both planes pass through the third and fourth electrodes of the second Lamb wave resonator. A periodic lattice acoustically couples the first and second resonant layers.
A system comprises a memory storing data at addresses associated with pixels in images, each address being linked by a function to coordinates of a pixel in an ordered image reference frame, a device for processing the data associated with the pixels, where a pixel being processed is referenced by an associated vector relative to a reference pixel, and an interface device providing data to the processing device. A data request indicates a vector associated with a pixel being processed. The coordinates of the reference pixel are determined by applying the function to an address associated with the reference pixel. Next the coordinates of the pixel being processed are obtained based on the coordinates of the reference pixel and on the vector. Then the address of the data associated with the pixel being processed is determined by applying the inverse function of the function to the coordinates of the pixel being processed.
An electronic circuit includes configurable cells each having a test input and an output. The configurable cells are connected to one another in a chain in a predefined order via their test input and their output to form a test register based on receiving a chaining command signal. The electronic circuit also includes a detection circuit activated by the chaining command signal to produce a state signal representing a state of initialization of a first set of configurable cells A multiplexing circuit selectively connects the test input of each configurable cell to a second set of the configurable cells either to the output of a preceding configurable cell or to an output of a decoy data generator based on the state signal.
A method and a system for qualifying an integrated circuit according to a parasitic supply peak detector that it contains, including: supply of the integrated circuit to be tested under at least a first voltage; checking of a starting of the circuit; application of at least one first noise peak on the circuit power supply, while respecting an amplitude and time gauge; and comparison of average currents consumed by the circuit before and after the peak.
G01R 27/02 - Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
94.
Method and device for the reduction of the DC component of a signal transposed into baseband, in particular in a receiver of the direct conversion type
A method is for reducing a DC component of an input signal transposed into baseband and being generated by a first frequency transposition stage starting from an initial signal and from a transposition signal. The method includes amplifying the transposed input signal in a first amplifier. The first amplifier receives at a DC offset compensation input, a compensation signal extracted from an output signal of a second amplifier subjected to a compensation of a offset DC voltage of the second amplifier. The method also included alternating between receiving at an input of the second amplifier, a first auxiliary signal from an auto-transposition of a transposition signal in a second frequency transposition stage and a second auxiliary signal from a transposition of the initial signal in the second frequency transposition stage with the transposition signal.
The present invention relates to a memory on a silicon microchip, having a serial input/output, an integrated memory array addressable under N bits, and at least one register that is read accessible, after applying a command for reading the register to the memory. The memory stores a most significant address allocated to the memory within an extended memory array wherein the memory is incorporated or intended to be incorporated. A master memory signal is generated based on the most significant address allocated to the memory. A central processing unit executes a command for reading the register and supplies the content of the register to the serial input/output of the memory only if the memory is the master memory within the extended memory array. The memory includes slave memories whose operation depends upon the read/write status of the master memory.
The control of a plasma display panel, successively comprises, at least for all the cells of a current line having to switch state for the next line: a connection of a terminal of application of an intermediary supply voltage to output terminals of column control stages corresponding to the junction points of first and second switches between two terminals of application of a supply voltage, to perform a precharge or a predischarge of the screen cells; a disconnection of said output terminals from this intermediary voltage; and a connection of each output terminal to a first or to a second power supply voltage by the turning-on of the first or second switch of the corresponding stage, according to a luminance reference value, delayed with respect to the disconnection of the corresponding output terminal from the terminal of application of the intermediary voltage.
G09G 3/28 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using luminous gas-discharge panels, e.g. plasma panels
97.
Production of an improved color filter on a microelectronic imaging device comprising a cavity
A microelectronic device includes a color filter equipped with a plurality of filtering elements, including several filtering elements. The device includes at least one first zone located inside a cavity and includes a first group of filtering elements having a first critical dimension, and at least one second zone at the periphery of the cavity, including a second group of filtering elements having a second critical dimension that is different from the first critical dimension.
A pump having: a cavity formed inside an insulating substrate, the upper part of the substrate being situated near the cavity having an edge; a conductive layer covering the inside of the cavity up to the edge and optionally covering the edge itself; a flexible membrane made of a conductive material placed above the cavity and resting against the edge; a dielectric layer covering the conductive layer or the membrane whereby insulating the portions of the conductive layer and of the membrane that are near one another; at least one aeration line formed in the insulating substrate that opens into the cavity via an opening in the conductive layer, and; terminals for applying a voltage between the conductive layer and the membrane.
An electronic circuit includes configurable cells capable of being functionally linked to logic cells with which they cooperate to form at least one logic circuit if a chaining command signal is in a first (inactive) state. The electronic circuit also includes a logic interconnection circuit for performing the following functions if the chaining command signal is in a second (active) state. Functionally connecting the configurable cells in a linear feedback shift register if an authentication signal is in a first state, or functionally connecting the configurable cells in a chain in a predefined order to form a shift register if the authentication signal is in a second state.
An electronic circuit includes configurable cells with a test input and an output. The configurable cells are capable of being connected to one another in a chain in a predefined order via the test inputs and the outputs to form a test shift register if they receive a chaining command signal. A connection control module disconnects the test input from at least one configurable cell if the connection control module receives an invalid identification key. The connection control module leaves disconnected the test input from the at least one configurable cell, or applies a constant potential on the test input of the at least one configurable cell, or connects the test input of the at least one configurable cell at an output of a random-data generator.
patents
