The present disclosure concerns overtemperature protection circuit formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, comprising:
a first resistor having a first positive temperature coefficient and being arranged in said gallium nitride layer; and
a second resistor having a second temperature coefficient different from the first coefficient.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
The present disclosure concerns a driver of a first e-mode type HEMT power transistor adapted to receiving a maximum voltage of 650 V between its drain and its source, the circuit being formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, and comprising at least a second e-mode type transistor adapted to directly transmitting a control voltage to the gate of the first transistor and having an area greater than 5 mm2.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
The present disclosure concerns a voltage regulation circuit formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, comprising: between a first terminal and a second terminal, a first resistor and a first d-mode type HEMT transistor; and between the first terminal and the third terminal, a second d-mode type HEMT transistor; wherein the midpoint between the first resistor and the first transistor is coupled to the gates of the first and second transistors.
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
The present disclosure concerns an electronic device formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, comprising at least one e-mode type HEMT power transistor adapted to receiving a maximum voltage of 650 V between its drain and its source, and an analog circuit for controlling said power transistor.
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
A device includes a memory and cryptographic processing circuitry coupled to the memory. The memory, in operation, stores one or more lookup tables. The cryptographic processing circuitry, in operation, processes masked data and protects the processing of masked data against side channel attacks. The protecting includes applying masked binary logic operations to masked data using lookup tables of the one or more lookup tables.
In an embodiments a method includes obtaining a neural network (INN), the neural network having a plurality of neural layers, each layer being capable of being executed according to different implementation solutions and impacting a required memory allocation for the execution of the neural network and/or an execution time of the neural network, defining a maximum execution time threshold of the neural network and/or a maximum required memory allocation threshold for the execution of the neural network, determining an optimal required memory allocation size for the execution of the neural network from possible implementation solutions for each layer of the neural network, determining an optimal execution time of the neural network from the possible implementation solutions for each layer of the neural network and estimating a performance loss or a performance gain in terms of execution time and required memory allocation for each implementation solution of each layer of the neural network.
The present disclosure relates to a method comprising: applying, by a control circuit, a first pulsed signal, consisting of sequential first voltage pulses, to the gate of a power transistor supplying a capacitive load of the circuit, the pulses of the first pulsed signal being separated from each other by a first wait time; further to one or more of the pulses of the first signal, making a comparison, by a comparator, of the value of the voltage across the capacitive load with a first voltage threshold value; and, if the first voltage threshold value is exceeded, applying a second pulsed signal, consisting of sequential second voltage pulses, to the gate of the power transistor, the pulses of the second pulsed signal being separated from each other by a second wait time shorter than the first wait time.
G11C 11/4074 - Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
G11C 11/4072 - Circuits for initialization, powering up or down, clearing memory or presetting
G11C 11/4096 - Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
8.
METHOD AND DEVICE FOR MANAGING INFORMATION EXCHANGE BETWEEN NFC CONTROLLER AND AUXILIARY ELEMENTS
A device, including a main element and a set of at least two auxiliary elements, the main element including a master SWP interface, each auxiliary element including a slave SWP interface connected to the master SWP interface of the NFC element through a controllably switchable SWP link and management circuit configured to control the SWP link switching for selectively activating at once only one slave SWP interface on the SWP link.
H04W 4/80 - Services using short range communication, e.g. near-field communication [NFC], radio-frequency identification [RFID] or low energy communication
G06K 7/00 - Methods or arrangements for sensing record carriers
G06K 7/10 - Methods or arrangements for sensing record carriers by corpuscular radiation
H04B 5/00 - Near-field transmission systems, e.g. inductive loop type
The disclosure includes a method of authenticating a processor that includes an arithmetic and logic unit. At least one decoded operand of at least a portion of a to-be-executed opcode is received on a first terminal of the arithmetic and logic unit. A signed instruction is received on a second terminal of the arithmetic and logic unit. The signed instruction combines a decoded instruction of the to-be-executed opcode and a previous calculation result of the arithmetic and logic unit.
A method for managing the consumption of a memory device includes performing a first reading of data in a first portion of a first memory area of the memory device. During a same memory access, error correction code check bits are read from a second portion of a second memory area of the memory device. The error correction check bits include error correction check bits that are associated with the data in the first portion of the first memory area and other error correction code check bits associated with other data. All of the other error correction code check bits are stored in a register, and the other data in the first portion of the first memory area is read. The error correction code bits associated with the other data are extracted from the register.
An artificial neural network includes a unit cell. The unit cell includes a first binary two-dimensional convolution layer configured to receive an input tensor and to generate a first tensor. A first batch normalization layer is configured to receive the first tensor and to generate a second tensor. A concatenation layer is configured to generate a third tensor by concatenating the input tensor and the second tensor. A second binary two-dimensional convolution layer is configured to receive the third tensor and to generate a fourth tensor. A second batch normalization layer is configured to generate an output tensor based on the fourth tensor.
A method of pairing between a first host device and a first peripheral device includes entering by a user of the first host device a verification value, as well as comparing, by the first peripheral device, between the verification value and a first secret value stored in a memory of the first peripheral device. When the verification corresponds to the first secret value, the method of pairing further includes calculating and storing a first pairing key by the first host device and the first peripheral device to perform the pairing.
One embodiment provides a digital-to-analog converter that includes an output amplifier configured to be powered with a controllable power supply voltage and a ground reference voltage. The output amplifier is configured to generate an analog output signal having a dynamic range centered on a common-mode voltage. The output amplifier includes a common-mode adaptation circuit configured to position a level of the common-mode voltage at a level located in a middle portion of an interval of voltages located between the power supply voltage and the ground reference voltage, according to an effective level of the power supply voltage.
A wireless communication device includes a battery, and a platform powered by the battery, with the platform including a processor. The device also includes a voltage regulator powered by the battery, an ultra-wideband communication unit powered by the voltage regulator via the platform when the platform is powered up, and a near-field communication unit powered directly by the battery, and being configured to order the voltage regulator to power the ultra-wideband communication unit when the platform is powered down.
A first near-field communication device detects the presence of a second near-field communication device located within range. In response to that detection, there is an initiation of a near-field communication between the first and second devices. In case of a failure of the initiation of the near-field communication, instead an initiation of a contactless bank transaction between the first and second devices occurs.
A nonvolatile memory device has a “split-voltage” architecture and includes columns of memory words formed on each row by groups of memory cells. All state transistors for memory cells of a memory word are gate controlled by a control element. All control elements of a same row are controlled by a first control signal generated by a first row control circuit in response to a set-reset (SR) latch output signal output for a selected row. In order to write a piece of data in a memory word, the first row control circuit confers onto the first control signal an erasing voltage corresponding to a first logic state of the first control signal and then a programming voltage corresponding to a second logic state of the first control signal without modifying, between erasing and programming the memory word, the state of the latch output signal for the selected row.
A memory cell includes a selection transistor having a control gate and a first conduction terminal connected to a variable-resistance element. The memory cell is formed in a wafer comprising a semiconductor substrate covered with a first insulating layer, the insulating layer being covered with an active layer made of a semiconductor. The gate is formed on the active layer and has a lateral flank covered with a second insulating layer. The variable-resistance element includes a first layer covering a lateral flank of the active layer in a trench formed through the active layer along the lateral flank of the gate and reaching the first insulating layer, and a second layer made of a variable-resistance material.
H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
18.
METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT AND CORRESPONDING INTEGRATED CIRCUIT
An integrated circuit includes transistor. That transistor is manufactured using a process including the following steps: forming a first gate region; depositing dielectric layers accumulating on sides of the first gate region to form regions of spacers having a width; etching to remove a part of the deposited dielectric layers accumulated on the sides of the first gate region to reduce the width of the regions of spacers; performing a first implantation of dopants aligned on the regions of spacers to form first lightly doped conduction regions of the transistor; and performing a second implanting of dopants to form first more strongly doped conduction regions of the transistor.
H01L 29/788 - Field-effect transistors with field effect produced by an insulated gate with floating gate
19.
METHOD FOR GENERATING AN UPDATE FILE AND CORRESPONDING SERVER DEVICE, UPDATING METHOD AND CORRESPONDING CLIENT DEVICE, UPDATING METHOD AND CORRESPONDING SYSTEM
A server builds an update file to update software. The server compiles source code of an updated version of the software, generating a binary file of the updated version of the software. Memory locations are mapped to sections of the binary file based on mappings of sections of a binary file of a prior version of the software. Bits of sections of a plurality of sections of the binary file of the prior version are logically combined, bit-by-bit, with bits of corresponding sections of the binary file of the updated version. The logically combining includes: applying an exclusive or operation; or applying an exclusive nor operation. The update file is built based on the mapping of the memory locations and on results of the logical combining.
A MOSFET transistor includes, on a semiconductor layer, a stack of a gate insulator and of a gate region on the gate insulator. The gate region has a first gate portion and a second gate portion between the first gate portion and the gate insulator. The first gate portion has a first length in a first lateral direction of the transistor. The second gate portion has a second length in the first lateral direction that is shorter than the first length.
The present description concerns a ROM including at least one first rewritable memory cell. In an embodiment, a method of manufacturing a read-only memory (ROM) comprising a plurality of memory cells is proposed. Each of the plurality of memory cells includes a rewritable first transistor and a rewritable second transistor. An insulated gate of the rewritable first transistor is connected to an insulated gate of the rewritable second transistor. The method includes successively depositing, on a semiconductor structure, a first insulating layer and a first gate layer, wherein the first insulating layer is arranged between the semiconductor structure and the first gate layer, wherein the rewritable second transistor further includes a well-formed between an associated first insulating layer and the semiconductor structure, and wherein the rewritable first insulating layer is in direct contact with the semiconductor structure; and successively depositing a second insulating layer and a second gate layer.
A semiconductor device includes a Schottky diode on a substrate. The Schottky diode includes a layer of polysilicon disposed on a dielectric layer within the substrate that is configured to electrically insulate the layer of polysilicon from the substrate. The layer of polysilicon includes an N-type doped first cathode region adjacent to an undoped second anode region. A first metal contact is disposed on a surface of the N-type doped first cathode region and a second metal contact is disposed on a surface of the undoped second anode region. The first metal contact and second metal contact are electrically insulated from each other by an insulating layer on the layer of polysilicon.
An integrated circuit includes a programmable logic block. The programmable logic block includes a programmable logic array (PLA) and a field programmable gate array (FPGA). The PLA includes logic cells having a first architecture. The FPGA includes logic cells having a second architecture more complex than the first architecture. The programmable logic block includes an interface coupled to the PLA and the FPGA. An integrated circuit may also include circuitry for selecting one of plurality of clock signals for logic cells of a PLA.
H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
H03K 19/17736 - Structural details of routing resources
H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
In an embodiment, a phase circuit includes: a bidirectional output stage configured to be coupled between a first battery and a second battery; a memory configured to store a number of active phases, and an identifier; and a synchronization circuit configured to receive a first clock signal and determine a start time of a switching cycle of the bidirectional output stage based on the number of active phases, the identifier, and the first clock signal, where the phase circuit is configured to control the timing of the switching of the bidirectional output stage based on the start time.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
B60L 53/22 - Constructional details or arrangements of charging converters specially adapted for charging electric vehicles
B60L 58/20 - Methods or circuit arrangements for monitoring or controlling batteries or fuel cells, specially adapted for electric vehicles for monitoring or controlling batteries of two or more battery modules having different nominal voltages
In accordance with an embodiment, a circuit for managing a power supply of an electronic module includes: a first state machine configured to receive a first command for disabling the module, and to verify that the first command remains the same for a first minimum time period; and a second state machine configured to cut off a power supply of a first portion of the module when the second state machine receives a second command from the first state machine indicating that the first command has remained the same for the first minimum time period. The first portion of the module is configured to is configured to be powered from a battery via a first power supply voltage.
A switched-mode power supply includes a voltage ramp generation circuit that generates a voltage ramp signal. The voltage ramp generation circuit includes, selectively connected in parallel, at least three capacitors. The selective connection of the capacitors is made according to a value of an internal power supply voltage of the switched-mode power supply.
H02M 3/158 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
27.
PROCESS FOR TRANSFORMING A TRAINED ARTIFICIAL NEURON NETWORK
According to one aspect, there is proposed a method for transforming a trained artificial neural network including a binary convolution layer followed by a pooling layer then a batch normalization layer, the method includes obtaining the trained artificial neural network and transforming the trained artificial neural network such that the order of the layers of the trained artificial neural network is modified by displacing the batch normalization layer after the convolution layer.
The latch device includes an RS type latch flip-flop capable of being supplied between a first supply voltage and a second supply voltage which is lower than the first supply voltage and having first and second flip-flop inputs and a flip-flop output connected to the output terminal. A control module positions the latch flip-flop in a set state or in a reset state when the first supply voltage has a first value which is lower than the low voltage then, the latch flip-flop being positioned, confers the high voltage on the first supply voltage and the low voltage on the second supply voltage and outputs and maintains the high voltage or the low voltage on the flip-flop output while avoiding outputting a prohibited logic state at the two flip-flop inputs.
Disclosed herein is an electronic control unit including a communication circuit designed to receive intelligent transport system (ITS) messages, an authentication circuit for authenticating the received messages, and a secure element containing a hardware-secure non-volatile memory and a continually active clock counter. The secure element is configured to assign a timestamp data item from the clock counter to each of the authenticated received messages and to store the authenticated messages along with their respective timestamp data in the hardware-secure non-volatile memory
The electronic control unit includes a communication circuit adapted to receive intelligent transport system messages, an authentication circuit designed to authenticate the received messages, a non-volatile memory configured to record the authenticated received messages, and a secure element. The secure element includes a blacklist of automatically excluded senders and is configured to directly reject a received message from a sender on the blacklist without authentication using the authentication circuit. Alternatively, the secure element includes a whitelist of automatically allowed senders and is configured to directly record a received message from a sender on the whitelist in the non-volatile memory without authentication using the authentication circuit.
G06F 21/78 - Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data
A transistor is disclosed. In an embodiment a transistor includes a first semiconductor region of a substrate, a first trench delimiting the first semiconductor region on a first side, a first electrically-conductive element located in the first trench, a channel area in contact with the first semiconductor region and a first area of contact with the first semiconductor region, wherein the channel area and the first area of contact are on the same surface side of the substrate.
An integrated circuit includes a programmable logic array. The programmable logic array incudes a plurality of logic elements arranged in rows and columns. Each logic element includes a direct output and a synchronized output. The direct output of each logic element is coupled to all other logic elements of higher rank, but is not coupled to logic elements of lower rank.
H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
H03K 19/17704 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns
A method of manufacturing a PN junction includes successive steps for: forming at least one trench in a semiconductor substrate of a first conductivity type; and filling the at least one trench with a semiconductor material of a second conductivity type, different from the first conductivity type.
A transistor includes a semiconductor layer with a stack of a gate insulator and a conductive gate on the semiconductor layer. A thickness of the gate insulator is variable in a length direction of the transistor. The gate insulator includes a first region having a first thickness below a central region of the conductive gate. The gate insulator further includes a second region having a second thickness, greater than the first thickness, below an edge region of conductive gate.
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
In accordance with an embodiment, a system-on-chip includes: a memory circuit comprising a first memory region accessible with a first access right level and a second memory region accessible with the first access right level or a second access right level, at least one first peripheral having the first access right level, at least one second peripheral having the second access right level; and a direct memory access circuit configured to generate direct memory accesses, wherein the direct memory access circuit includes at least one first direct memory access controller having the first access right level and at least one second direct memory access controller having the second access right level.
A system on chip includes a programmable logic array. The system on chip also includes a signal conditioner coupled to a data input of the programmable logic array and configured to condition a data signal prior to processing the data signal with the programmable logic array. The signal conditioner can selectively condition the signal by one or both of synchronizing the data signal with a clock signal of the programmable logic array and generating a pulse from the data signal with an edge detector.
H03K 19/17736 - Structural details of routing resources
H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
37.
INTEGRATED CIRCUIT INCLUDING A CAPACITIVE ELEMENT AND CORRESPONDING MANUFACTURING METHOD
A semiconductor substrate includes excavations which form trenches sunk. A capacitive element includes: a first dielectric envelope conforming to sides and bottoms of the trenches; a first semiconductor layer conforming to a surface of the first dielectric envelope in the trenches; a second dielectric envelope conforming to a surface of the first semiconductor layer in the trenches; and a second semiconductor layer conforming to a surface of the second dielectric envelope in the trenches.
H01L 29/94 - Metal-insulator-semiconductors, e.g. MOS
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/788 - Field-effect transistors with field effect produced by an insulated gate with floating gate
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
A semiconductor wafer includes first zones containing integrated circuits, each first zone including a substrate and a sealing ring at a periphery of the substrate. The first zones are separated from each other by second zones defining cutting lines or paths. The integrated circuit includes an electrically conductive fuse that extends between a first location inside the integrated circuit and a second location situated outside the integrated circuit beyond one of the cutting lines. This electrically conductive fuse includes a portion that passes through the sealing ring and another portion that straddles the adjacent cutting line. The portion of the fuse that passes through is electrically isolated from the sealing ring and from the substrate. The straddling portion is configured to be sliced, when cutting the wafer along the cutting line, so as to cause the fuse to change from an electrical on state to an electrical off state.
H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
H01H 85/02 - Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive - Details
H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
H01L 21/66 - Testing or measuring during manufacture or treatment
39.
METHOD FOR TRANSFERRING DATA BETWEEN A FIRST DIGITAL DOMAIN AND A SECOND DIGITAL DOMAIN, AND CORRESPONDING SYSTEM ON A CHIP
The system on a chip includes at least a first digital domain configured to be reinitialized by a first reinitialization signal, a second digital domain and an interface circuit. The interface circuit includes a starting register in the first digital domain, a destination register in the second digital domain and a synchronization circuit in the first digital domain. The interface circuit is configured to transfer data from the starting register to the destination register upon command of a control signal transmitted by the synchronization circuit. The starting register and the synchronization circuit are configured to not be reinitialized by the first reinitialization signal.
An ultralong time constant time measurement device includes elementary capacitive elements that are connected in series. Each elementary capacitive element is formed by a stack of a first conductive region, a dielectric layer having a thickness suited for allowing charge to flow by direct tunnelling effect, and a second conductive region. The first conductive region is housed in a trench extending from a front face of a semiconductor substrate down into the semiconductor substrate. The dielectric layer rests on the first face of the semiconductor substrate and in particular on a portion of the first conductive region in the trench. The second conductive region rests on the dielectric layer.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
G04F 1/00 - Apparatus which can be set and started to measure-off predetermined or adjustably-fixed time intervals without driving mechanisms, e.g. egg timers
H01L 21/70 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
H01L 27/01 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
H01L 27/10 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
41.
A VOLTAGE REGULATOR DEVICE, CORRESPONDING METHOD AND DATA STORAGE SYSTEM
In an embodiment a device includes a supply node configured to receive a supply voltage, an output node configured to provide an output voltage, a plurality of switching stages coupled to the supply node and to the output node, a sensing circuit coupled to the supply node and configured to provide at least one sensing signal based on the supply voltage and a driver circuit coupled to the sensing circuit and to the plurality of switching stages, wherein the driver circuit is configured to provide the drive signal based on at least one sensing signal exceeding or failing to exceed at least one reference voltage level and to selectively bypass a selected number of the plurality of switching stages based on the drive signal thereby varying an output voltage level at the output node.
H02M 3/07 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
An integrated circuit memory includes a state transistor having a floating gate which stores a respective data value. A device for protecting the data stored in the memory includes a capacitive structure having a first electrically-conducting body coupled to the floating gate of the state transistor, a dielectric body, and a second electrically-conducting body coupled to a ground terminal. The dielectric body is configured, if an aqueous solution is brought into contact with the dielectric body, to electrically couple the floating gate and the ground terminal so as to modify the charge on the floating gate and to lose the corresponding data. Otherwise, the dielectric body is configured to electrically isolate the floating gate and the ground terminal.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 29/788 - Field-effect transistors with field effect produced by an insulated gate with floating gate
G06F 21/75 - Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure computing or processing of information by inhibiting the analysis of circuitry or operation, e.g. to counteract reverse engineering
G06F 21/79 - Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data in semiconductor storage media, e.g. directly-addressable memories
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
43.
CIRCUITS AND METHODS FOR DEBOUNCING SIGNALS PRODUCED BY A ROTARY ENCODER
A first input node receives a first input signal and a second input node receives a second input signal. The first and second input signals are in phase quadrature. An edge detector circuit senses the first input signal and produces a pulsed signal indicative of edges detected in the first input signal. A pulse skip and reset circuit senses the pulsed signal and the second input signal, and produces a reset signal indicative of pulses detected in the pulsed signal while the second input signal is de-asserted. A sampling circuit senses the second input signal and the reset signal, and produces an output signal that is deasserted in response to assertion of the second input signal and is asserted in response to a pulse being detected in the reset signal.
H03K 5/1254 - Suppression or limitation of noise or interference specially adapted for pulses generated by closure of switches, i.e. anti-bouncing devices
G01D 5/347 - Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales
H03K 3/013 - Modifications of generator to prevent operation by noise or interference
A memory cell is disclosed. In an embodiment a programmable read-only memory cell includes a first insulating layer located between a semiconductor body and a second conductive or semi-conductive layer, wherein the first insulating layer comprises a peripheral portion and a central portion, and wherein the peripheral portion has a greater thickness than the central portion.
An EEPROM memory integrated circuit includes memory cells arranged in a memory plane. Each memory cell includes an access transistor in series with a state transistor. Each access transistor is coupled, via its source region, to the corresponding source line and each state transistor is coupled, via its drain region, to the corresponding bit line. The floating gate of each state transistor rests on a dielectric layer having a first part with a first thickness, and a second part with a second thickness that is less than the first thickness. The second part is located on the source side of the state transistor.
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
An electronic device includes a near-field communication module and a powering circuit for delivering a power supply voltage to the near-field communication module. When the near-field communication module is in a low power mode, the powering circuit is configured for an operational mode where it is periodically started to provide the power supply voltage.
The integrated circuit comprises at least one transistor including a separate gate structure and field plate, disposed on a front face of a semiconductor substrate, and a doped conduction region in the semiconductor substrate located plumb with an edge of the gate structure and plumb with an edge of the field plate.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
A circuit monitors a first voltage delivered by a battery. The monitored first voltage is compared with a second voltage. When the comparator detects that the first voltage is smaller than the second voltage, a counter starts counting. If the value of the counter during said counting exceeds a limiting value, an interruption signal is generated to control an operating mode of an electronic device power by said battery.
STMicroelectronics International N.V. (Switzerland)
STMicroelectronics (Rousset) SAS (France)
Inventor
La Rosa, Francesco
Bildgen, Marco
Abstract
An integrated circuit comprises a memory device including a memory plane having non-volatile memory cells and being non-observable in read mode from outside the memory device, a controller, internal to the memory device, configured to detect the memorized content of the memory plane, and when the memorized content contains locking content, automatically lock any access to the memory plane from outside the memory device, the integrated circuit then being in a locked status, and authorize delivery outside the memory device of at least one sensitive datum stored in the memory plane.
G11C 16/22 - Safety or protection circuits preventing unauthorised or accidental access to memory cells
G11C 16/16 - Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
G06F 21/78 - Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data
50.
ELECTRONIC DEVICE INCLUDING AN ELECTRONIC MODULE AND A COMPENSATION CIRCUIT
According to one aspect, an electronic device includes a power supply terminal, a voltage regulator connected to the power supply terminal, an electronic module connected to the voltage regulator, and a compensation circuit configured to receive an auxiliary current generated by the voltage regulator and being equal to a first fraction of the electronic module current. The compensation circuit includes a current source configured to supply a source current to a cold point, and a compensation stage connected to the power supply terminal and being traversed by an intermediate current equal to a difference between the source current and the auxiliary current and by a complementary current equal to the intermediate current multiplied by an inverse multiplication factor of the first fraction.
G06F 21/81 - Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer by operating on the power supply, e.g. enabling or disabling power-on, sleep or resume operations
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H02M 3/155 - Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
A method of manufacturing a contact on a semiconductor region includes a step of forming a stack of layers on lateral walls and at a bottom of an orifice (aligned with the semiconductor region) crossing a dielectric region along a longitudinal direction. The step of forming step is carried out from a first surface of the dielectric region and includes forming a polysilicon layer and a layer of a first metal in contact with the polysilicon layer. The first metal is preferably a metal selected from the group of transition metals and is well suited to forming with the polysilicon layer a metal silicide. The method further includes a step of performing thermal anneal causing a reaction between the first metal and the polysilicon layer to produce a layer of metal silicide. At least a portion of that layer of metal silicide extends in the longitudinal direction of the orifice.
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
52.
CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-CHANGE MATERIAL
An integrated circuit includes a substrate with an active area, a first insulating layer, a second insulating layer, and a phase-change material. The integrated circuit further includes a heating element in an L-shape, with a long side in direct physical contact with the phase-change material and a short side in direct physical contact with a via. The heating element is surrounded by first, second, and third insulating spacers, with the first insulating spacer having a planar first sidewall in contact with the long side of the heating element, a convex second sidewall, and a planar bottom face in contact with the short side of the heating element. The second and third insulating spacers are in direct contact with the first insulating spacer and the long side of the heating element.
H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or
Centre National De La Recherche Scientifique (France)
STMicroelectro (Crolles 2) SAS (France)
STMicroelectronics (Rousset) SAS (France)
Inventor
Portal, Jean-Michel
Della Marca, Vincenzo
Walder, Jean-Pierre
Gasquez, Julien
Boivin, Philippe
Abstract
Memory devices such as phase change memory (PCM) devices utilizing Ovonic Threshold Switching (OTS) selectors may be used to fill the gap between dynamic random-access memory (DRAM) and mass storage and may be incorporated in high-end microcontrollers. Since the programming efficiency and reading phase efficiency of such devices is directly linked to the leakage current of the OTS selector as well as sneak-path management, a sense amplifier disclosed herein generates an auto-reference that takes into account the leakage currents of unselected cells and includes a regulation loop to compensate for voltage drop due to read current sensing. This auto-referenced sense amplifier, built utilizing the principle of charge-sharing, may be designed on a 28 nm fully depleted silicon-on-insulator (FDSOI) technology, provides robust performance for a wide range of sneak-path currents and consequently for a large range of memory array sizes, and is therefore suitable for use in embedded memory in high-end microcontroller.
A contactless communication device includes an electronic integrated circuit chip and an antenna coupled to the electronic integrated circuit chip to supply an electric signal for powering the electronic integrated circuit chip. An ambient luminosity detection element is coupled to the electronic integrated circuit chip. An ambient luminosity level measured by the ambient luminosity detection element is supplied to the electronic integrated circuit chip for comparison to a darkness threshold. A contactless communication is authorized only when the measured ambient luminosity level is greater than the darkness threshold.
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
A first integrated circuit chip is assembled to a second integrated circuit chip with a back-to-back surface relationship. The back surfaces of the integrated circuit chips are attached to each other using one or more of an adhesive, solder or molecular bonding. The back surface of at least one the integrated circuit chips is processed to include at least one of a trench, a cavity or a saw cut.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
H01L 23/528 - Layout of the interconnection structure
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
56.
INTEGRATED CIRCUIT INCLUDING A PHYSICALLY UNCLONABLE FUNCTION DEVICE AND CORRESPONDING METHOD FOR IMPLEMENTING A PHYSICALLY UNCLONABLE FUNCTION
Unclonable function circuitry includes a plurality of pairs of phase-change memory cells in a virgin state, and sensing circuitry coupled to the plurality of pairs of phase-change memory cells in the virgin state. The sensing circuitry identifies a subset of the plurality of pairs of phase-change memory cells in the virgin state based on a reliability mask. Signs of differences of effective resistance values of the identified subset of the plurality of pairs of phase-change memory cells in the virgin state are sensed by the sensing circuitry. The sensing circuitry generates a string of bits based on the sensed signs of differences in the effective resistance values of the identified subset of the plurality of pairs of phase-change memory cells in the virgin state. Processing circuitry coupled to the unclonable function circuitry, in operation, executes one or more operations using the generated string of bits.
A device includes an application processor and a hardware signal processor coupled to the application processor. The hardware signal processor, in operation: receives a command pre-list during an initialization phase of the hardware signal processor, the command pre-list including a plurality of function describers, each of the plurality of function describers being associated with a respective plurality of parameter describers; generates a command list based on the command pre-list during the initialization phase; and stores the command list in memory circuitry.
Trenches of different depths in an integrated circuit are formed by a process utilizes a dry etch. A first stop layer is formed over first and second zones of the substrate. A second stop layer is formed over the first stop layer in only the second zone. A patterned mask defines the locations where the trenches are to be formed. The dry etch uses the mask to etch in the first zone, in a given time, through the first stop layer and then into the substrate down to a first depth to form a first trench. This etch also, at the same time, etch in the second zone through the second stop layer, and further through the first stop layer, and then into the substrate down to a second depth to form a second trench. The second depth is shallower than the first depth.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
59.
RESISTIVE MEMORY CELL HAVING AN OVONIC THRESHOLD SWITCH
The disclosure concerns a resistive memory cell, including a stack of a selector, of a resistive element, and of a layer of phase-change material, the selector having no physical contact with the phase-change material. In one embodiment, the selector is an ovonic threshold switch formed on a conductive track of a metallization level.
H10N 70/00 - Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
H10N 70/20 - Multistable switching devices, e.g. memristors
60.
MEMORY ARCHITECTURE OF A NEAR-FIELD COMMUNICATION DEVICE
A near-field communication device operates to transmit data by near-field communications techniques to another device. The near-field communication device includes a memory that stores a message to be transmitted in an ASCII format. The message is retrieved from the memory and transmitted using the near-field communications techniques in an ASCII format.
First and second wells are formed in a semiconductor substrate. First and second trenches in the first second wells, respectively, each extend vertically and include a central conductor insulated by a first insulating layer. A second insulating layer is formed on a top surface of the semiconductor substrate. The second insulating layer is selectively thinned over the second trench. A polysilicon layer is deposited on the second insulating layer and then lithographically patterned to form: a first polysilicon portion over the first well that is electrically connected to the central conductor of the first trench to form a first capacitor plate, a second capacitor plate formed by the first well; and a second polysilicon portion over the second well forming a floating gate electrode of a floating gate transistor of a memory cell having an access transistor whose control gate is formed by the central conductor of the second trench.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
62.
Method of producing triggering signals for a control of a multimedia interface
A system includes an electronic module and an integrated circuit outside the electronic module. The integrated circuit is configured to generate a digital timing signal that emulates a first synchronization signal internal to the module and not available outside the module and to generate trigger signals based on the digital timing signal. A controller is configured to independently and autonomously perform control operations of the electronic module at times triggered by the trigger signals.
A contactless transponder includes an autonomous power supply and a non-volatile memory device. In a first mode of operation, an apparatus external to the transponder transmits to the transponder, according to a contactless communication protocol, module command information associated with a module external to the transponder and module data information relating to data to be written to or to be read from the module. The transponder stores the module command information and module data information in a first area of the non-volatile memory device. In response to an activation signal, the transponder autonomously communicates, according to a first communication protocol, with the module by using the module command information and module data information.
G06K 7/10 - Methods or arrangements for sensing record carriers by corpuscular radiation
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
A method of manufacturing a radio frequency switch includes the steps of: forming a first silicide layer on a second conductive or semiconductor layer; forming a third insulating layer on the first layer; forming a cavity in the third insulating layer reaching the first silicide layer; forming a fourth metal layer in the cavity in contact with the first silicide layer; performing a non-oxidizing annealing; and filling the cavity with a conductive material. The first silicide layer is provided on one or more of the gate, source, and drain of a transistor forming the radio frequency switch.
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
65.
METHOD FOR MANUFACTURING INTEGRATED CIRCUITS FROM A SEMICONDUCTOR SUBSTRATE WAFER
Integrated circuits are supported by a semiconductor substrate wafer. Each integrated circuit includes an electrically active area. A thermally conductive protective structure is formed around the active areas of the various integrated circuits along scribe paths. The protective structure is located between the electrically active areas of the integrated circuits and a laser ablation area of the scribe paths. Separation of the integrated circuits is performed by scribing the semiconductor substrate wafer along the scribe paths. The process for scribing includes performing a laser ablation in the laser ablation area and then performing one of an etching or a physical scribing.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
H01L 23/58 - Structural electrical arrangements for semiconductor devices not otherwise provided for
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
STMicroelectronics Razvoj Polprevodnikov D.O.O. (Slovenia)
Inventor
Tramoni, Alexandre
Kovacic, Kosta
Sibille, Florent
Cordier, Nicolas
Tornambe, Anthony
Ruiz, Jean Remi
Jaunet, Guillaume
Abstract
A near-field communication circuit of a first NFC device alternates, in low power mode, between: first phases of emission of field bursts and second phases spanning an entire duration separating two successive first phases. Each second phase includes a field detector enabling phase. In one implementation, the field detector enabling phase extends all along a duration of the second phase. In an alternate implementation, the field detector enabling phase is interrupted by field detector disabling phases. Each field detector disabling phase has a duration shorter than a minimum duration of each first phase.
A semiconductor region includes an isolating region which delimits a working area of the semiconductor region. A trench is located in the working area and further extends into the isolating region. The trench is filled by an electrically conductive central portion that is insulated from the working area by an isolating enclosure. A cover region is positioned to cover at least a first part of the filled trench, wherein the first part is located in the working area. A dielectric layer is in contact with the filled trench. A metal silicide layer is located at least on the electrically conductive central portion of a second part of the filled trench, wherein the second part is not covered by the cover region.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 27/08 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
The present disclosure relates to a device comprising a first transistor and a first circuit comprising first and second terminals, the first circuit being configured to generate a first voltage representing the temperature of the first transistor, a first terminal of the first circuit being coupled to the drain of the first transistor.
H03K 17/0812 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (France)
STMICROELECTRONICS (CROLLES 2) SAS (France)
STMICROELECTRONICS S.R.L. (Italy)
STMICROELECTRONICS (ROUSSET) SAS (France)
UNIVERSITE D'AIX MARSEILLE (France)
Inventor
Della Marca, Vincenzo
Melul, Franck
La Rosa, Francesco
Niel, Stephan
Regnier, Arnaud
Conte, Antonino
Miridi, Nadia
Abstract
The present disclosure relates to a memory cell (1) and to a method of erasing the memory cell (1). The memory cell comprises a doped well (100) of a first conductivity type and a transistor (T). Transistor (T) comprises a doped first region (106) of a second conductivity type opposite to the first conductivity type, the first doped region extending in the doped well (100); a buried doped channel (118) of the second conductivity type extending in the doped well (100); and a gate stack (108) resting on the doped well (100), above the buried doped channel (118). The gate stack (108) comprises a first layer (110) adapted to trap charges, a second insulating layer (112) resting on the first layer and a third conductive layer (114) resting on the second layer.
H01L 27/11521 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L 29/788 - Field-effect transistors with field effect produced by an insulated gate with floating gate
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
In an embodiment a method for implementing a NFC transaction between a mobile terminal and a distant module is disclosed. The terminal includes a processor hosting an application configured to establish the NFC transaction and an interface software configured to execute instructions of the application, a near-field communication module and a secure element distinct from the processor. The method includes requesting, by the application via the interface software, which verifies whether the application is authorized to communicate with the secure element, authorization to implement the NFC transaction from the secure element, sending, by the secure element, a first temporary authorization to the interface software, verifying, by the interface software, at least for a first time when the near-field communication module receives first data from the distant module, whether the interface software has received the first temporary authorization and transmitting, by the interface software, the first data to the application when the interface software has received the first temporary authorization.
G06Q 20/32 - Payment architectures, schemes or protocols characterised by the use of specific devices using wireless devices
G06Q 20/40 - Authorisation, e.g. identification of payer or payee, verification of customer or shop credentials; Review and approval of payers, e.g. check of credit lines or negative lists
In an embodiment a method for implementing a NFC transaction between a mobile terminal and a distant module is disclosed. The terminal includes a processor hosting an application configured to establish the NFC transaction, a near-field communication module, and a secure element distinct from the processor. The method includes storing, by the near-field communication module in the secure element, first data from the distant module, sending, by the near-field communication module, second data to the application notifying it that the first data have been stored in the secure element and requesting, by the application, the first data from the secure element.
The present description concerns a method of implementation of an NFC transaction between a mobile terminal and a distant module. The terminal includes a processor hosting an application establishing the NFC transaction, a near-field communication module, and a secure element distinct from the processor. The method includes at least the following successive steps: (a) the near-field communication module ciphers first data sent by the distant module by using a first key supplied by the secure element and (b) the first application deciphers the first data by using a second key supplied by the secure elements.
The present description concerns a method of implementation of an NFC transaction between a mobile terminal and a distant module. The terminal includes a processor hosting an application establishing the NFC transaction, a near-field communication module, and a secure element distinct from the processor. The method includes at least the following successive steps: (a) the near-field communication module sends, to the first application, first data sent by the distant module and ciphered by the secure element; and (b) the first application asks the secure element to decipher the first data.
G06Q 20/32 - Payment architectures, schemes or protocols characterised by the use of specific devices using wireless devices
G06Q 20/40 - Authorisation, e.g. identification of payer or payee, verification of customer or shop credentials; Review and approval of payers, e.g. check of credit lines or negative lists
Embodiments are directed to electronic fuse devices and systems. One such electronic fuse includes current sensing circuitry that senses a current in a conductor coupled between a power supply and a load, and generates a current sensing signal indicative of the sensed current. I2t circuitry receives the current sensing signal and determines whether the sensed current exceeds an I2t curve of the conductor. The electronic fuse further includes at least one of external MOSFET temperature sensing circuitry that senses a temperature of an external MOSFET coupled to the conductor, low current bypass circuitry that supplies a reduced current to the load in a low power consumption mode during which the external MOSFET is in a non-conductive state, or desaturation sensing circuitry that senses a drain-source voltage of the external MOSFET.
H02H 3/08 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess current
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
In the case of a potential detection, by a first near field communication (NFC) device, of a second NFC device, a validation of this detection is performed according to the time variation gradient of at least one environmental condition of the first device. A value of one of an amplitude and an phase of a signal across an oscillating circuit of the first NFC device is compared to first thresholds to potentially detect the second NFC device. Validation of detection occurs when one of the amplitude and the phase of the signal is outside the first thresholds adjusted as a function of the time variation gradient. Validation detection also occurs when one of the amplitude and the phase of the signal adjusted as a function of the time variation gradient is outside the first thresholds.
A system-on-chip includes a processor, a memory and a memory interface coupled to the processor and to the memory. The processor, in operation, generates memory access requests. The memory includes one or more physical banks divided into a succession of sectors, each sector having a size equal to a smallest erasable size of the memory. The memory interface, in operation, responds to receiving memory configuration information by storing logical memory bank configuration information in the one or more configuration registers, the logical memory bank configuration information assigning each sector of the one or more physical banks of the memory to a respective logical memory bank of one or more logical memory banks. The memory interface, in operation, controls access to the memory by the processor based on the logical memory bank configuration information stored in the one or more configuration registers.
The present disclosure relates to a method for aligning a smartphone providing NFC wireless power for charging a battery of a device, the method comprising: emitting, with a first NFC antenna of the smartphone, an NFC field for wirelessly charging the battery of the device comprising a second NFC antenna; obtaining, with the smartphone, a measured value of a signal representative of the NFC field strength between the smartphone and the device; determining, by the smartphone, a range of values of a plurality of ranges of values the measured value belongs; and emitting, by the smartphone, at least one notification signal to a user with a frequency determined by the determined range of values.
H04B 5/00 - Near-field transmission systems, e.g. inductive loop type
H02J 50/10 - Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
H02J 50/80 - Circuit arrangements or systems for wireless supply or distribution of electric power involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices
H02J 50/90 - Circuit arrangements or systems for wireless supply or distribution of electric power involving detection or optimisation of position, e.g. alignment
A device includes a first circuit that includes a near-field emission circuit, a second circuit, and a hardware connection linking the first circuit to the second circuit. The hardware connection is dedicated to a priority management between the first circuit and the second circuit. In addition, priority management information can be communicated between a near-field emission circuit and a second circuit. The communicating occurs between a dedicated hardware connection connecting the near-field emission circuit to the second circuit.
A wobulated signal generator includes a chain of delay elements and control circuitry. The chain of delay elements includes first delay elements, second delay elements, and third delay elements. The control circuitry, in operation, enables a number of the first delay elements, disables a number of the third delay elements, and enables a selected number of the second delay elements, defining a period of time between two consecutive rising edges of a digital wobulated signal at an output of the wobulated signal generator. The control circuitry monitors an average frequency of the digitally wobulated signal, and selectively modifies the number of enabled first delay elements and the number of disabled third delay elements based on the monitored average frequency of the digitally wobulated signal.
H03K 5/133 - Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active-delay devices
H03K 5/156 - Arrangements in which a continuous pulse train is transformed into a train having a desired pattern
G11C 7/22 - Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
G11C 8/18 - Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
80.
EVENT MANAGEMENT METHOD AND CORRESPONDING INTEGRATED CIRCUIT
In an embodiment an integrated circuit includes a digital-signal processing unit having an event management device configured to associate respective event data items with respective trigger signals and a digital-signal processor configured to associate a respective task with an respective event data item, wherein the event management device is configured to receive the trigger signals at input terminals and, when a trigger signal is received, store the event data item associated with the received trigger signal in an event register, and wherein the digital-signal processor is configured execute the task associated with the event data item stored in the event register.
An integrated circuit includes a substrate, an interconnection part, and an isolating region located between the substrate and the interconnection part. A decoy structure is located within the isolating region and includes a silicided sector which is electrically isolated from the substrate.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A circuit for a communication device and a method for switching a communication device are disclosed. In an embodiment, a method includes activating at least one first antenna and at least one second antenna of a near-field communication (NFC) device for switching the NFC device between first field detection phases and second card detection phases.
H04B 5/00 - Near-field transmission systems, e.g. inductive loop type
G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
H01Q 1/24 - Supports; Mounting means by structural association with other equipment or articles with receiving set
H01Q 1/52 - Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
H01Q 1/22 - Supports; Mounting means by structural association with other equipment or articles
The present description concerns an electronic device including: a first input configured to receive a clock signal, coupled by a first input buffer to a first circuit; and at least an output coupled by an output buffer to the first circuit, the output buffer being synchronized on first edges of the clock signal, wherein the first input buffer includes a data input coupled to the first input and is configured to maintain the value on its output constant whatever the value on its data input during a duration following each first edge of the clock signal.
G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
G11C 7/22 - Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
H03K 5/135 - Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals by the use of time reference signals, e.g. clock signals
An embodiment of the present disclosure relates to a method of detection of a touch contact by a sensor including a first step of comparison of a voltage with a first voltage threshold; and a second step of comparison of the voltage with a second voltage threshold, the second step being implemented if the first voltage threshold has been reached within a duration shorter than a first duration threshold, the second voltage threshold being higher than the first voltage threshold.
G01D 5/24 - Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
STMicroelectronics International N.V. (Switzerland)
Inventor
Kumar, Manoj
Kumar, Ravinder
Demange, Nicolas
Abstract
An integrated circuit includes an overvoltage protection circuit. The overvoltage protection circuit detects overvoltage events at a pad of the integrated circuit. The overvoltage protection circuit generates a max voltage signal that is the greater of the voltage at the pad and a supply voltage of the integrated circuit. The overvoltage protection circuit disables a PMOS transistor coupled to the pad by supplying the max voltage signal to the gate of the PMOS transistor when an overvoltage event is present at the pad.
H02H 3/20 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess voltage
The present disclosure relates to a cryptographic method including the execution, by a cryptographic circuit, of an algorithm applied to a scalar in order to generate an output vector, of length L+n, which digits are d0, . . . , dL+n−1, the algorithm comprising iterations i, each iteration i taking an input data value, initially equal to said scalar and an input vector of length c, which digits are d′i, . . . , d′i+c−1, where for each j∈{i, . . . , i+c−1}, the digit d′j is such that:
The present disclosure relates to a cryptographic method including the execution, by a cryptographic circuit, of an algorithm applied to a scalar in order to generate an output vector, of length L+n, which digits are d0, . . . , dL+n−1, the algorithm comprising iterations i, each iteration i taking an input data value, initially equal to said scalar and an input vector of length c, which digits are d′i, . . . , d′i+c−1, where for each j∈{i, . . . , i+c−1}, the digit d′j is such that:
d
j
′
=
{
d
j
if
j
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Provided is a voltage regulator supplying a first voltage on a first output node and comprising a first input transistor of a non-inverting stage and a second biasing transistor of the non-inverting stage. The first and second transistors are coupled in series, in this order, between the first node and a second node of application of a second reference voltage. The second transistor is being configured to be controlled by a third voltage depending on the first voltage.
G05F 1/59 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load
G05F 1/575 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
G05F 1/46 - Regulating voltage or current wherein the variable actually regulated by the final control device is dc
The present description concerns an electronic device having an antenna configured to receive a radio frequency signal. The electronic device further includes a control unit. The control unit is off, and the antenna receives a radio frequency signal. The antenna is configured to deliver a first voltage representative of the radio frequency signal to power the control unit with the voltage for the duration of the booting of the control unit.
The present description concerns an electronic device comprising a semiconductor substrate, transistors having their gates contained in first trenches extending in the substrate, and at least one electronic component, different from a transistor, at least partly formed in a first semiconductor region contained in a second trench extending in the semiconductor substrate parallel to the first trenches.
According to one aspect, a method is proposed for detecting events or elements in physical signals by implementing an artificial neural network. The method includes an assessment of a probability of the presence of the event or the element by an implementation of the neural network. The implementation of the neural network according to a nominal mode takes as input a physical signal having a first resolution, called nominal resolution, when the probability of presence of the event or the element is greater than a threshold. The implementation of the neural network according to a low power mode takes as input a physical signal having a second resolution, called reduced resolution, lower than the first resolution, when the probability of presence of the event or the element is below the threshold.
According to one aspect, the disclosure proposes a method for detecting events or features in physical signals by implementing an artificial neural network. The method includes evaluating the probability of presence of the event or feature by implementing the artificial neural network. The method includes implementing the artificial neural network in a nominal mode and to which a physical signal having a first so-called nominal resolution is fed, as long as the probability of the presence of the event or feature is below a threshold. The method further includes implementing the artificial neural network in a reduced consumption mode with a reduced resolution, as long as the probability of the presence of the event or feature is above the threshold. The reduced resolution is lower than the first resolution.
G06V 10/62 - Extraction of image or video features relating to a temporal dimension, e.g. time-based feature extraction; Pattern tracking
G06V 10/44 - Local feature extraction by analysis of parts of the pattern, e.g. by detecting edges, contours, loops, corners, strokes or intersections; Connectivity analysis, e.g. of connected components
G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
92.
PROCESS FOR DETECTION OF EVENTS OR ELEMENTS IN PHYSICAL SIGNALS BY IMPLEMENTING AN ARTIFICIAL NEURON NETWORK
According to one aspect, a method is provided for detecting events or elements in physical signals, including at least one implementation of a reference artificial neural network, at least one implementation of an auxiliary artificial neural network distinct from the reference artificial neural network. The auxiliary artificial neural network being simplified relative to the reference artificial neural network. At least one assessment of a probability of presence of the event or the element by the implementation of the reference artificial neural network or by the implementation of the auxiliary artificial neural network, where the reference artificial neural network is implemented when the probability of presence of the event or the element is greater than a threshold, and wherein the auxiliary artificial neural network is implemented when the probability of presence of the event or the element is below the threshold.
In an embodiment a computer system includes at least one master module configured to process data having a format of N bits, a framebuffer configured to store pixel color component values of an image, the framebuffer having a resolution of N bits, each pixel being coded on P bits in the framebuffer and the pixels being stored one after another in the framebuffer and a memory management unit configured to control memory accesses of the at least one master module to the framebuffer, wherein the memory management unit is further configured to receive read memory access requests from the at least one master module, read at least one pixel in the framebuffer saved on P bits, and modify the format of the at least one read pixel by adding Q additional bits equal to a difference between N and P so as to format the at least one pixel on N bits before transmitting the at least one pixel to the at least one master module.
A semiconductor substrate includes a buried semiconductor layer and semiconductor wells. A device for detecting a possible thinning of the semiconductor substrate via the rear face thereof is formed on and in the semiconductor wells. The device is a non-inverting buffer including an input terminal and an output terminal, the device being powered between a supply terminal and a reference terminal where the buried semiconductor layer provides the supply terminal. A control circuit delivers an input signal in a first state to the input terminal and outputs a control signal indicating a detection of a thinning of the substrate if a signal generated at the output terminal in response to the input signal is in a second state different from the first state.
The present disclosure relates to an electronic device comprising a semiconductor substrate and transistors having their gates contained in trenches extending in the semiconductor substrate, each transistor comprising a doped semiconductor well of a first conductivity type, the well being buried in the semiconductor substrate and in contact with two adjacent trenches among said trenches, a first doped semiconductor region of a second conductivity type, covering the well, in contact with the well, and in contact with the two adjacent trenches, a second doped semiconductor region of the second conductivity type more heavily doped than the first semiconductor region, extending in the first semiconductor region, and a third doped semiconductor region of the first conductivity type, more heavily doped than the well, covering the well, in contact with the first region, and extending in the semiconductor substrate in contact with the well.
H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
A device includes a memory, which, in operation, stores one or more look-up tables, and cryptographic circuitry coupled to the memory. The cryptographic circuitry, in operation, multiplies first data masked with a first mask by second data masked with a second mask, and protects the first data and the second data during the multiplying. The multiplying and protecting includes remasking the first data with a third mask, remasking the second data with a fourth mask, executing one or more compensation operations using one or more of the one or more look-up tables, and generating third data masked with a fifth mask. The fifth mask is independent of the first, second, third, and fourth masks. The third data corresponds to the first data multiplied by the second data.
A method for synchronizing a first time domain with a second time domain of a system on chip includes a detection of at least one periodic trigger event generated in the first time domain, the second time domain or in a third time domain; acquisitions, made at the instants of the at least one trigger event, of the current timestamp values representative of the instantaneous states of the time domain(s) other than the trigger time domain; a comparison, made in the third time domain, between differential durations between current timestamp values which are respectively acquired successively; and a synchronization of the second time domain with the first time domain, on the basis of the comparison.
In an embodiment a non-volatile memory device includes a memory array having a plurality of memory cells, a control unit operatively coupled to the memory array, a biasing stage controllable by the control unit and configured to apply a biasing configuration to the memory cells to perform a memory operation and a reading stage coupled to the memory array and controllable by the control unit, the reading stage configured to verify whether the memory operation has been successful based on a verify level, wherein the control unit is configured to adaptively modify a value of the verify level based on an ageing of the memory cells.
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
H01L 27/11526 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the peripheral circuit region
G11C 16/26 - Sensing or reading circuits; Data output circuits
G11C 16/14 - Circuits for erasing electrically, e.g. erase voltage switching circuits
H01L 27/11521 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region
The present disclosure relates to an electronic device comprising a first capacitor and a quartz crystal coupled in series between a first node and a second node; an inverter coupled between the first and second nodes; a first variable capacitor coupled between the first node and a third node; and a second variable capacitor coupled between the second node and the third node.
H03F 3/24 - Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
H03B 5/36 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
H03L 1/02 - Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
H03L 7/099 - Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
The integrated circuit includes a logic part including standard cells arranged in parallel rows along a first direction and in an alternation of complementary semiconductor wells. Among the standard cells, at least one capacitive filling structure belongs to two adjacent rows and includes a capacitive interface between a conductive armature and the first well, the extent of the second well in the first direction being interrupted over the length of the capacitive filling structure so that the first well occupies in the second direction the width of the two adjacent rows of the capacitive filling structure. A conductive structure electrically connects the second well on either side of the capacitive filling structure.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
patents
