Abstract

An electronic device is obtained in such a way that a MEMS substrate having a MEMS element mounted thereon and a CMOS substrate are bonded together at bonding surfaces and with a bonding material M having fluidity, wherein the MEMS substrate has a bonding projection part provided to project from a substrate main body and having the bonding surface and a gap formation part disposed between the bonding projection part and the MEMS element, and the gap formation part is supported by the bonding projection part via a plurality of support pieces extending from the bonding projection part and forms reception gaps, which are capable of receiving the bonding material M extruded from the bonding surface to the side of the MEMS element, between the wall surface thereof and the bonding projection part.

IPC Classes  ?

• H01L 29/40 - Electrodes
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
• B81B 7/00 - Microstructural systems

Abstract

An actuator (1) is provided with: a movable part (120); a support part (110, 210) which supports the movable part; and a plurality of torsion bars (230) (i) each of which connects the movable part and the support part along a long direction such that the movable part is capable of swinging around a rotational axis which is along the long direction and (ii) which are arranged along a short direction; the farther each torsion bar is from the rotational axis, the smaller a spring constant of each torsion bar is.

IPC Classes  ?

• B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
• G02B 26/10 - Scanning systems
• G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
• G02B 27/01 - Head-up displays

Abstract

An electrostatic actuator includes: a fixed driving electrode that is disposed on a silicon substrate; a movable driving electrode that is disposed so as to face the fixed driving electrode and approaches the fixed driving electrode with an electrostatic force generated between the movable driving electrode and the fixed driving electrode; and a pair of spacers that comes in contact with the movable driving electrode in an approaching state in which the fixed driving electrode and the movable driving electrode approach each other and forms a prescribed air gap between the fixed driving electrode and the movable driving electrode, wherein each of the spacers has a spacer electrode portion that comes in contact with the movable driving electrode via an insulator and has the same potential as one of the electrodes at least in the approaching state.

IPC Classes  ?

• H01G 5/16 - Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
• H02N 1/00 - Electrostatic generators or motors using a solid moving electrostatic charge carrier
• B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
• H01H 59/00 - Electrostatic relays; Electro-adhesion relays

Abstract

An electronic device 1 has a first semiconductor substrate 2 on which a bonding projection section 42 is projected via an insulation film 41, a second semiconductor substrate 3 that is bonded by welding the bonding projection section 42 of the first semiconductor substrate 2 via conductive bonding material, a through hole 54 that is formed to penetrate the bonding projection section 42 and the insulation film 41 in a bonding direction, and a conduction wiring section 44 that is formed by the conductive bonding material filled in the through hole 54 at a time of bonding by welding and conducts the first semiconductor substrate 2 with the second semiconductor substrate 3 to have same electric potential.

IPC Classes  ?

• H01L 23/52 - Arrangements for conducting electric current within the device in operation from one component to another
• H01L 21/30 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

a of the aluminum containing layer 31.

IPC Classes  ?

• H01L 29/84 - Types of semiconductor device controllable by variation of applied mechanical force, e.g. of pressure