The purpose of the present invention is to provide an optical scanner that allows the reflection within a scanning range from a region outside a mirror to be suitably reduced. A MEMS mirror (100) according to the present invention scans the light reflected from a mirror part (3) within a prescribed angle range by causing the mirror part (3) that reflects light incident thereon to pivot. The MEMS mirror includes a fixed frame (1), a frame part (2), and a protrusion pattern (7). The frame part (2) is coupled to the mirror part (3) and causes the mirror part (3) to pivot. The fixed frame (1) movably supports the frame part (2). The protrusion pattern (7) is provided on the surfaces of the fixed frame (1) and the frame part (2) at which incident light enters, reflects the incident light, and creates first order diffracted light caused by the reflection outside of the range of scanning angle.
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
The present invention addresses the problem of providing an optical filter manufacturing method whereby a sputter mask can be easily and accurately aligned with a workpiece, and an optical filter constituting a plurality of filter sections can be easily and accurately formed. The present invention is characterized by performing: a spacer layer film-forming step for film-forming a spacer layer 61 on a light receiving element array 15; a mask layer film-forming step for film-forming a mask layer 62 on the spacer layer 61; an opening forming step for forming a plurality of openings 33 in the mask layer 62; a part removing step for removing spacer layer 61 parts corresponding to the openings 33; and a multilayer film-growing step for vapor-growing a dielectric multilayer film 16a on the light receiving element array 15 via the mask layer 62.
SCHOOL JURIDICAL PERSON OF FUKUOKA KOGYO DAIGAKU (Japan)
Inventor
Katayama, Ryuichi
Yoshizawa, Katsumi
Sugiura, Satoshi
Kasuya, Takayuki
Abstract
To suitably select a combination of a semiconductor member and a metal member in terms of improving the enhancement degree of near-field light. A device (1) is provided with a semiconductor substrate (101) and a metal end (102), and generates near-field light at the metal end when energy is supplied to the semiconductor substrate. The metal end is configured from an alloy containing a first metal and a second metal, and when the resonance wavelength of the first metal is represented by Rm1, the resonance wavelength of the second metal is represented by Rm2, and the resonance wavelength of the semiconductor substrate is represented by Rs, the conditions of Rm1
A drive device (100) is provided with a first base section (111), a second base section (112), a third base section (113), a first elastic section (122) which connects the first base section and the second base section, a second elastic section (124) which connects the second base section and the third base section, a first driven section (131) which is supported by the first base section so as to be capable of being driven, and a second driven section (132) which is supported by the third base section so as to be capable of being driven.
An actuator (1) is provided with: a planar movable section (120); a supporting section (210) for supporting the movable section; and a torsion bar (230) which connects the movable section and the supporting section to each other in the longitudinal direction such that the movable section can swing with a rotation axis in the longitudinal direction at the center. On one surface of the movable section, a reflecting section (121) is formed, and on the other movable section surface on the reverse side of the one surface, one or a plurality of ribs (123) that maintain planarity of the movable section are formed. A first rib included in the one or the plurality of ribs extend in the lateral direction on the other surface. On the other surface in a planar view, a first rib side surface on the torsion bar side has a recessed shape at a portion at a distance from the rotation axis, and the degree of the recess of the side surface portion at a distance from the rotation axis is large compared with the degree of the side surface recess close to the rotation axis.
This steel body structure (101) is provided with: a first steel body section (110) having a laminate structure of a first support layer (10) and a first active layer (20); a second steel body section (120) having a laminate structure of a second support layer and a second active layer; and a spring section (210) that elastically links the first steel body section and second steel body section to each other. The spring section is formed including a layer identical to the first support layer and the second support layer. As a result, it is possible to increase the breakage resistance of the spring section and it is possible to achieve of highly reliable device.
This drive device (101) is provided with: a first base section (110); a second base section (120); an elastic section (210) that links the first base section and the second base section; and a driven section (400) that is supported by the second base section in a drivable manner. By means of such a drive device, when, for example, driving force is imparted to the first base section, the driving force is transmitted to the second base section via the elastic section. Thus, it is possible to appropriately drive the driven section supported by the second base section.
The present invention is an electron emission element that can increase resolution without requiring movable parts, and an image-capturing device provided with said electron emission element. The image-capturing device (1) comprises: an electron emission unit (2) in which a plurality of electron emission sources (23) are arranged in a matrix; a plurality of row-direction electrodes (52) that are arranged so as to be separated from the electron emission unit (2) in the electron emission direction, and that are provided so as to correspond to respective row-direction arrays in the plurality of electron emission sources (23); a plurality of column-direction electrodes (54) that are arranged so as to be separated from the electron emission unit (2) in the electron emission direction, and that are provided so as to correspond to respective column-direction arrays in the plurality of electron emission sources (23); and an electric-field control unit (57) that selectively applies a voltage to the plurality of row-direction electrodes (52) and the plurality of column-direction electrodes (54).
Provided is a variable capacitor array which excels in capacitance linearity without the chip area becoming larger. N variable capacitor elements (10) are disposed on the same silicon substrate (2). Each variable capacitor element (10) has the following: a fixed capacitor electrode (11); a movable capacitor electrode (12) facing the fixed capacitor electrode (11); and electrostatic actuators (13) that cause the movable capacitor electrode (12) to disjoin with respect to the fixed capacitor electrode (11). At least one fixed-side projection part (14) is formed projecting on the fixed capacitor electrode (11) on an opposing movement facing-surface that faces the movable capacitor electrode (12). Among the n variable capacitor elements (10), each of the fixed-side projection parts (14) are formed to have the same shape and size, and the number of the fixed-side projection parts (14) differs.
H01G 5/16 - Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
H01L 29/84 - Types of semiconductor device controllable by variation of applied mechanical force, e.g. of pressure
10.
ELECTROSTATIC ACTUATOR AND VARIABLE CAPACITANCE DEVICE
The present invention provides an electrostatic actuator capable of causing one section of a swaying beam to sway definitively in a direction approaching a substrate while the other section is caused to sway in a direction towards the substrate. The electrostatic actuator comprises: a swaying beam (22) supported to be able to sway like a seesaw by a support (21) on a silicon substrate (2) and made to sway by an electrostatic force; and a movable beam (25) opposed on the silicon substrate (2) side to an outer section (22a), relative to the support (21), of the swaying beam (22) to generate an electrostatic force between itself and the outer section (22a) and also having one end on a side opposite the support (21) connected to an end of the outer section (22a) and the other end on the support (21) side secured to the silicon substrate (2).
Provided is an electrostatic actuator, etc. of simple configuration, said actuator being capable of obtaining a strong pull-away force when a first movable beam is pulled away from a fixed electrode. A static actuator (4) has a fixed driving electrode (21) and a fixed part (22). The fixed driving electrode (21) is provided on a silicon substrate (2). The fixed part (22) has a first movable beam (31) and a second movable beam (32) connected together in a folded-over structure and configured to be expandable in an accordion configuration. An electrostatic force between the first movable beam (31) and the fixed driving electrode (21) causes the movable beams to expand in an accordion configuration so that the first movable beam (31) approaches the fixed driving electrode (21). An electrostatic force between the moveable beams causes the movable beams to contract in an accordion configuration so that the first movable beam (31) moves away from the fixed driving electrode (21). At least one of the movable beams includes an insulator section forming a main body and a conductor layer formed on a surface of the insulator section on a fixed driving electrode (21) side and/or the opposite surface thereto.
Provided is a semiconductor device, or the like, that is capable of effectively preventing light from leaking into a light-receiving element from a light-emitting element, while being compact and easy to manufacture. The semiconductor device (10) is formed by mounting a light-emitting element (12) and a light-receiving element (13) on a common package substrate (11). At least one of the light-emitting element (12) and the light-receiving element (13) is mounted at the bottom (15a) of an inverse truncated cone-shaped groove (15), which is formed in the package substrate (11), so as to be set in said groove (15).
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
G01V 8/12 - Detecting, e.g. by using light barriers using one transmitter and one receiver
13.
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, PROXIMITY SENSOR EQUIPPED WITH SAME, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Provided is a semiconductor device, or the like, that is capable of effectively preventing light from leaking into a light-receiving element from a light-emitting element, while supporting flexibility in positioning a light-blocking wall section and ease of manufacturing. The semiconductor device (10) is formed by mounting a light-emitting element (12) and a light-receiving element (13) on a common package substrate (11). The semiconductor device is equipped with a light-blocking wall section (15) that is formed between the light-emitting element (12) and the light-receiving element (13) by potting the package substrate (11) with a high-viscosity resin at a height exceeding the light-emitting element (12) and the light-receiving element (13).
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
G01V 8/12 - Detecting, e.g. by using light barriers using one transmitter and one receiver
14.
SEMICONDUCTOR DEVICE, PROXIMITY SENSOR EQUIPPED WITH SAME, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Provided is a semiconductor device or the like, which, of the light that wraps around to a light-receiving element from a light-emitting element, is capable of preventing light reflected from a panel body or the like from reaching the light-receiving element. The semiconductor device (10) is formed by mounting the light-emitting element (12) and the light-receiving element (13) on a common package substrate (11). The light-emitting element (12) and/or the light-receiving element (13) are/is mounted on the bottom (15a) of an inverse truncated cone-shaped groove (15) formed in the package substrate (11) so as to be set in said groove (15). Furthermore, a surface (14a) of an encapsulating resin (14) is formed on the package substrate (11) by a sloped surface that slopes down toward the light-receiving element (13) from the light-emitting element (12).
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
G01V 8/12 - Detecting, e.g. by using light barriers using one transmitter and one receiver
15.
SEMICONDUCTOR DEVICE, PROXIMITY SENSOR EQUIPPED WITH SAME, AND SEMICONDUCTOR MANUFACTURING METHOD
Provided is a semiconductor device, or the like, that is capable of effectively preventing light from a light-emitting element from leaking onto a light-receiving element, while being easy to manufacture. The semiconductor device (10) is formed by mounting a light-emitting element (12) and a light-receiving element (13) on a common package substrate (11). At least one of the light-emitting element (12) and the light-receiving element (13) is mounted at the bottom (15a) of an inverse truncated cone-shaped groove (15), which is formed in the package substrate (11), so as to be set in said groove (15). A V-shaped optical groove (16), which is positioned between the light-emitting element (12) and the light-receiving element (13) and refracts light emitted from the light-emitting element (12) forward toward the light-receiving element, is formed in an encapsulating resin (14).
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
G01V 8/12 - Detecting, e.g. by using light barriers using one transmitter and one receiver
16.
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCING METHOD
The present invention addresses the problem of providing a semiconductor device in which preferable sealing resins can be used for sealing lead frames and for sealing light receiving-emitting areas, respectively, and which can be produced easily with inexpensive facilities. The present invention is characterized in including: a light receiving element (12) having a light receiving area (21); a lead frame (11) that has the light receiving element (12) installed on a top surface thereof and has a back surface thereof as a solder surface; a first sealing resin (13) that is made of a potting resin material and is filled in at least frame interstices (35) of the lead frame (11) in such a manner that the light receiving area (21) is exposed; and a second sealing resin (14) that is made of a potting resin material different from that of the first sealing resin (13), and is formed by potting so as to seal at least the light receiving area (21).
The problem addressed by the present invention is easily and by means of a simple configuration to form a filter layer having a different film thickness at each position. The present invention is a method for producing a variable-transmission-wavelength interference filter (16) configuring a plurality of filter units (28), and is characterized by: using a mask member (75) that is interposed between a sputtering target (73) and a light reception element array (15) and that has an aperture ratio that differs at the positions corresponding to each filter unit (28); and causing the vapor phase growth of a dielectric multi-layer film (16a) on the light reception element array (15) with the mask member (75) therebetween.
The problem addressed by the present invention is to measure the strength distribution of the wavelength of each color in a precise manner and by means of a simple configuration. The present invention is characterized by being provided with: 18 filter units (28) respectively having the wavelength of each of 18 colors as a transmission peak; 18 light reception elements (25) that respectively receive incoming light that has passed through the 18 filter units (28), and output a photoelectric current value; a recording unit (31) that records a correction matrix resulting from converting to an inverse matrix a coefficient matrix of transmission coefficients that are for each color and for each filter unit (28) and that are obtained by causing 18 types of calibration light having differing specific strength distributions to enter each; and a calculation unit (32) that calculates a strength distribution by means of a multiplication process between the correction matrix and each photoelectric current value of the 18 light reception elements.
The purpose of the present invention is to provide a dry etching device whereby the surface of a substrate can be etched on the vertical, with good accuracy. The means for solving the problem is to provide the device with: an electrostatic chuck (13) by which a substrate (W) to undergo a dry etching process is held through electrostatic attraction on a chucking surface (23), and having a coolant gas injection aperture (25) for injecting a coolant gas into a gap (26) at the back side of the substrate, situated between the back surface of the substrate (W) and the chucking surface (23); and a mass flow controller (33) for controlling the pressure of the coolant gas within the gap (26) at the back side of the substrate, bringing the substrate (W) into a flat shape or an arcuate shape of downwardly depressed cross section. The chucking surface (23) is formed to downwardly depressed shape, accommodating the downwardly depressed cross sectional shape of the substrate (W) when held thereon through electrostatic attraction.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
The present invention addresses the problem of preventing contact of bonding material with the functional element or the peripheral circuitry thereof without narrowing the area in which the functional element or the peripheral circuitry thereof is disposed. The present invention is an electronic device (1) obtained by bonding a MEMS substrate (3) on which a MEMS element (2) has been loaded with a CMOS substrate (4) at the reciprocal bonding surfaces (12, 41) using a fluid bonding material (M) and is characterized in that: the MEMS substrate (3) comprises a bonding projection (31), which protrudes from the main substrate body (21) and has a bonding surface (41), and a gap-forming section (33) disposed between the bonding projection and the MEMS element; and the gap-forming section is supported by the bonding projection by means of multiple support pieces (42) that extend from the bonding projection and, between the wall surface thereof and the bonding projection, forms a receiving gap capable of receiving bonding material extruded from the bonding surface towards the MEMS element side.
B81B 7/02 - Microstructural systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
An actuator (101) is provided with a moving part (120), a support part (110) for supporting the moving part, a torsion bar (130) connecting the moving part and the support part such that the moving part can swing, and a processing circuit (140) formed in the moving part and used for performing processing related to the swinging of the moving part. The torsion bar includes (i) a first bar portion (131) in which wiring (15) connected to the processing circuit is formed, and (ii) a second bar portion (132) in which no wiring is formed. The maximum stress applied to the first bar portion when the moving part swings is smaller than the maximum stress applied to the second bar portion when the moving part swings. The first bar portion and the second bar portion are coplanar.
H02K 33/18 - Motors with reciprocating, oscillating or vibrating magnet, armature or coil system with coil systems moving upon intermittent or reversed energisation thereof by interaction with a fixed field system, e.g. permanent magnets
22.
ELECTROSTATIC ACTUATOR AND VARIABLE-CAPACITY DEVICE
The present invention allows an electrostatic force to be effectively generated during a separating operation and allows a high separating force to be obtained with a simple configuration. This electrostatic actuator is equipped with: a fixed drive electrode (21) that is fixedly provided with respect to a silicon substrate (2); a movable drive electrode (22), the bottom surface of which being placed so as to face the fixed drive electrode (21), that approaches the fixed drive electrode (21) by means of an electrostatic force generated between the movable drive electrode and the fixed drive electrode (21); and a separation electrode (24) that faces the top surface of the movable drive electrode (22) and separates the movable drive electrode (22) from the fixed drive electrode (21) by means of an electrostatic force generated between the separation electrode and the movable drive electrode (22). The separation electrode (24) partially fixes the movable drive electrode (22), and the movable drive electrode (22) and the separation electrode (24) deform so as to open with respect to the part where the movable drive electrode (22) and the separation electrode (24) are fixed together in order to accommodate the movements of the movable drive electrode (22) closer to and away from the fixed drive electrode (21).
The present invention enables stiction to be prevented by means of a simple configuration. This electrostatic actuator is equipped with: a fixed drive electrode (21) that is provided on a silicon substrate (2); a movable drive electrode (22) that is provided so as to face the fixed drive electrode (21), and is brought close to the fixed drive electrode (21) by means of an electrostatic force generated between the movable drive electrode and the fixed drive electrode (21); and a pair of spacers (25) that contact the movable drive electrode (22) when in a state in which the fixed drive electrode (21) and the movable drive electrode (22) are in proximity of each other, and form a prescribed air gap between the fixed drive electrode (21) and the movable drive electrode (22). Each spacer (25) has a spacer electrode (31) that comes into contact with the movable drive electrode (22) via an insulator and has the same potential as that of one of the electrodes at least in the state of proximity.
The present invention addresses the problem of providing: an electron emitter array which is capable of sufficiently and efficiently converging electron beams emitted from an electron emitting layer; and an imaging device which is provided with the electron emitter array. As a means for solving the above-mentioned problem, this electron emitter array is provided with: an electron emitting part that has a plurality of emission sites on the surface; and an electric field function part that is arranged above the electron emitting part. The electric field function part comprises: separate focusing electrode layers that are arranged to correspond to the respective emission sites so as to separately converge the electron beams emitted from the plurality of emission sites; and a collective focusing electrode layer that is arranged to correspond to the plurality of emission sites so as to collectively converge all of the electron beams emitted from the plurality of emission sites.
This method for producing a substrate device comprises: a first step (S102) wherein a substrate (100) having a specific surface is provided with a junction layer, which blocks the propagation of electrons, on a surface other than the specific surface; a second step (S103, S104) wherein an insulating layer (101) having an opening (110) is formed on the specific surface; a third step (S105) wherein a first conductive layer (102) is formed in a region that corresponds to the opening; a fourth step (S107) wherein a second conductive layer (104) is formed on the first conductive layer; and a fifth step (S109) wherein a part of the first conductive layer is etched.
An actuator (1) is provided with a movable part (120), a support part (110, 210) that supports said movable part, and a plurality of torsion bars (230) that: (i) each connect the movable part and the support part to each other in a long direction such that the movable part can swing about an axis of rotation in said long direction; and (ii) are arranged in a short direction. The farther each torsion bar is from the axis of rotation, the lower the spring constant of that torsion bar is.
B06B 1/04 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy operating with electromagnetism
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
An actuator (1) is provided with a movable part (120), a support part (110) that supports said movable part, and a torsion bar (230) that connects the movable part and the support part to each other in a long direction such that the movable part can swing about an axis of rotation in said long direction. A first part of the torsion bar, said first part being comparatively far from the axis of rotation, is less dense than a second part of the torsion bar, said second part being comparatively close to the axis of rotation.
B06B 1/04 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy operating with electromagnetism
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
An actuator (101) is provided with a movable section (120), a supporting section (110) surrounding the movable section, a torsion bar (130) for connecting the movable section and the supporting section so that the movable section is able to swing, and a processing circuit (140) formed on the movable section for processing related to the rocking motion of the movable section. The torsion bar comprises (i) a first bar part (131) having wiring (150) formed to establish a connection to the processing circuit and (ii) a second bar part (132) devoid of wiring. The maximum value of stress applied to the first bar part when the movable section rocks is smaller than the maximum value of stress applied to the second bar part when the movable section rocks.
H02K 33/18 - Motors with reciprocating, oscillating or vibrating magnet, armature or coil system with coil systems moving upon intermittent or reversed energisation thereof by interaction with a fixed field system, e.g. permanent magnets
A method for manufacturing an actuator equipped with a movable part (120) on which a reflective film (170) is formed, a support part (110) surrounding the movable part (120), and torsion bars (130) connecting the movable part and the support part such that the movable part is capable of oscillating, said method being equipped with: a first step (S106), wherein the movable part, the support part, and the torsion bars are formed on a substrate (201); a second step (S105), wherein the reflective film is formed on the movable part; and a third step (S103), wherein a protruding part (180), which (i) has sufficient height to protrude from the surface of the reflective film and (ii) prevents other structures from making contact with the reflective film, is formed on the side of the movable part on which the reflective film is formed.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
30.
ELECTROSTATIC ACTUATOR, VARIABLE CAPACITOR, AND ELECTRIC SWITCH
Stiction can be prevented using a simple structure in the present invention. Provided are: a pair of low-resistance layers (21a, 22a) for generating an electrostatic attractive force provided respectively to a lower drive electrode (21) and an upper drive electrode (22) and disposed so as to face each other across a gap; a pair of contact sections for forming, when approaching each other, an energizing path (A) for a charge through the pair of low-resistance layers (21a, 22a) on the lower drive electrode (21) and the upper drive electrode (22), the pair of contact sections provided respectively to the lower drive electrode (21) and the upper drive electrode (22); and a high-resistance layer (22a) for generating a potential difference disposed on the upper drive electrode (22) and provided along the connecting path (A), the high resistance layer adapted for imparting an electrostatic attractive force to the pair of low resistance layers (21a, 22a) when a specified drive voltage is applied.
In the present invention, the following are provided: a first conducting semiconductor layer (12) formed on top of a semiconductor substrate; a drain region (13) formed on the semiconductor layer (12) and having a second conducting drain electrode layer (21); a source region (14) formed on the semiconductor layer (12) and having a second conducting source offset layer (32) and a source electrode layer (31); a gate oxide film (15) formed between the drain region (13) and the source region (14) on an active region on the surface of the semiconductor layer (12); a LOCOS oxide film (16) formed between the drain region (13) and the gate oxide film (15) on the surface of the semiconductor layer (12); and a gate electrode (18) formed on top of the gate oxide film (15) so as to straddle the LOCOS oxide film (16). The source offset layer (32) is formed adjacent to the gate oxide film (15), and the concentration of impurities in the source offset layer (32) is higher than that of the semiconductor layer (12) and lower than that of the source electrode layer (31). The source electrode layer (31) is formed within the source offset layer (32) at a distance from the gate oxide film (15).
A rotational vibration gyro is provided which is able to properly remove erroneous vibrations caused by quadrature errors. A rotational vibration gyro vibrates a movable mass released on a substrate both reciprocatingly and rotationally via driving electrodes, and detects via detection electrodes displacement of the movable mass as it swings around a detection axis due to the Coriolis effect. This rotational vibration gyro has an error correcting means for imparting electrostatic force to the movable mass to correct the erroneous vibrations caused by the reciprocating and rotational vibration in a state that does not cause angular velocity, and the error correcting means has a plurality of correcting units arranged circumferentially with respect to the movable mass and centred on an axis orthogonal to the detection axis around at least one half of the movable mass as defined by the detection axis for applying voltage to generate the electrostatic force.
A reader (12) is provided with: a near-field optical device (122), which has (i) one or a plurality of quantum dots and (ii) an output end (224) that is laminated on the upper layer of the one or plurality of quantum dots; and a light-receiving means (124) which, when recorded information on a recording medium is played back, receives light attributable to near-field light formed by the near-field optical device. The reader enables information recorded by heat-assisted magnetic recording to be played back without providing a separate magnetic circuit.
G11B 11/105 - Recording on, or reproducing from, the same record carrier wherein for these two operations the methods or means are covered by different main groups of groups or by different subgroups of group ; Record carriers therefor using recording by magnetisation or demagnetisation using a beam of light or a magnetic field for recording and a beam of light for reproducing, e.g. light-induced thermomagnetic recording or Kerr effect reproducing
G01Q 60/18 - SNOM [Scanning Near-Field Optical Microscopy] or apparatus therefor, e.g. SNOM probes
G01Q 80/00 - Applications, other than SPM, of scanning-probe techniques
G11B 5/02 - Recording, reproducing or erasing methods; Read, write or erase circuits therefor
G11B 5/31 - Structure or manufacture of heads, e.g. inductive using thin film
A near-field optical device (100) is provided with a quantum dots (113, 116) that generate near-field light on the basis of light emitted from outside, and an output end (118) that is capable of outputting at least some energy from the near-field light that is generated to the outside. The output end is formed in such a manner that the length in one direction, as viewed in a plane from above the output end, is longer than the length in another direction that intersects said one direction. The near-field optical device enables information to be appropriately recorded by heat-assisted magnetic recording.
G11B 9/14 - Recording or reproducing using a method or means not covered by one of the main groups ; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means
G11B 5/02 - Recording, reproducing or erasing methods; Read, write or erase circuits therefor
G11B 5/31 - Structure or manufacture of heads, e.g. inductive using thin film
G11B 7/135 - Means for guiding the beam from the source to the record carrier or from the record carrier to the detector
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
G01Q 60/18 - SNOM [Scanning Near-Field Optical Microscopy] or apparatus therefor, e.g. SNOM probes
G01Q 80/00 - Applications, other than SPM, of scanning-probe techniques
35.
NEAR-FIELD OPTICAL DEVICE PRODUCTION METHOD AND NEAR-FIELD OPTICAL DEVICE
A method for producing a near-field optical device is provided with: a step for forming a near-field light generation unit (10) on one surface of a transparent substrate (32); a step for forming a light source (20); and a step for adhering the transparent substrate on which the near-field light generation unit is formed, with the light source. Thereby, a method for producing a near-field optical device suited for mass production can be provided.
G11B 5/31 - Structure or manufacture of heads, e.g. inductive using thin film
G11B 5/02 - Recording, reproducing or erasing methods; Read, write or erase circuits therefor
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
36.
SEMICONDUCTOR CHIP, SEMICONDUCTOR DEVICE PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP
The present invention addresses the issue of providing a semiconductor chip, wherein influence of stress to the semiconductor chip is reduced by means of simple process, said stress being generated due to secondary mounting, a semiconductor device provided with the semiconductor chip, and a method for manufacturing the semiconductor chip. A semiconductor chip of the present invention is fixed on a chip supporting substrate by bonding using a die bond material, and the semiconductor chip is characterized in that the rear surface side of the semiconductor chip, which is fixed to the chip supporting substrate by the bonding, is formed in a recessed and projected shape that is configured of a bonding portion and a non-bonding portion.
H01L 21/52 - Mounting semiconductor bodies in containers
H01L 21/301 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to subdivide a semiconductor body into separate parts, e.g. making partitions
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
37.
ELECTRON EMISSION ELEMENT AND IMAGE PICKUP APPARATUS PROVIDED WITH SAME
An electron emission element is provided with: an electron emission layer (3) that emits electrons from a surface-emitting section (9) thereof; a gate electrode layer (6) that is film-formed upon the surface of the electron emission layer (3) with a first insulator layer (5) interposed therebetween; a focusing electrode layer (8) that is film-formed upon the surface of the gate electrode layer (6) with a second insulator layer (7) interposed therebetween, and that focuses the emitted electrons; and an electron emission recess section (10) that penetrates the focusing electrode layer (8), the second insulator layer (7), the gate electrode layer (6), and the first insulator layer (5), and that is opened in recess form on the surface of the surface-emitting section (9). The layer-end of the focusing electrode layer (8) is positioned so as to be within an angle of θ ± 10° with respect to a perpendicular line extending from the center of the surface-emitting section (9), where θ is the angle between the aforementioned perpendicular line and a virtual line extending from the center of the surface-emitting section (9) so as to come in contact with the layer-end of the gate electrode layer (6).
This recording device records information in recording media (60, 601). The recording device comprises: a near-field optical device (1); and a control unit (70) for controlling the near-field optical device. The near-field optical device comprises: a light source (1); a quantum dot structure layered on the light source; a plurality of quantum dots (15) in the quantum dot structure that respectively emit near-field lights on the basis of a light emitted from the light source; and an output end (17) capable of outputting at least a part of energy of the near-field lights outside the quantum dot structure. The control unit of the recording device increases the temperature of an area of the recording medium based on the amount at the output end by controlling the light source to emit a light when information is recorded.
G11B 5/02 - Recording, reproducing or erasing methods; Read, write or erase circuits therefor
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
G11B 5/31 - Structure or manufacture of heads, e.g. inductive using thin film
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
39.
NEAR-FIELD OPTICAL DEVICES AND METHOD FOR CONTROLLING ENERGY TRANSFER
The present invention addresses the problem of providing near-field optical devices and an energy transfer control method, which enable quantum dots to be used to increase energy conversion efficiency, and enable high-density recording and high resolution to be achieved. These near-field optical devices (1, 100, 200, 300, 400, 500) are provided with light sources (11, 101, 204, 303, 402, 503), quantum dots (15, 105a, 105b, 108, 201, 202, 203, 301, 302, 401, 501, 502) that generate near-field light on the basis of light emitted from the light sources, and output terminals (17, 110, 205, 304, 403, 504) that are capable of outputting at least a portion of the energy of the near-field light to the outside.
A recording device records information to a recording medium (60, 601). This recording device is equipped with a near-field light device (1) and a control unit (70) that controls the near-field light device (1). The near-field light device has a light source (11), quantum dots (15) that generate a first near-field light when light emitted from the light source is received, and a metal end (17) to which at least a portion of the energy of the first near-field light is imparted. When information is recorded, the control unit controls the light source so as to emit light, and thus the metal end and a portion of the recording medium emit a second near-field light together, causing a portion of the recording medium to emit heat.
Provided is a rotational vibration gyro capable of accurately detecting the angular velocity. Disclosed is a rotational vibration gyro (1) characterized by being provided with a disc-shaped movable weight (4) which is released above a substrate (2), a drive electrode (3) which rotationally vibrates the movable weight (4) around the Z axis that passes the center of gravity thereof, a detection electrode (9) which detects the displacement of the movable weight (4) that is swung around a detection axis by Coriolis force, an anchor (6) which is provided so as to project from the substrate and supports the movable weight (4), and a support spring (7) which is hung between the anchor (6) and the movable weight (4), has a function of absorbing rotational vibration, and functions as a hinge of the detection axis, the extension direction of the support spring (7) being parallel to the axial direction of the detection axis.
Provided is a rotational vibration gyro which achieves improvement in the degree of freedom of design regarding flexural and torsional characteristics of a support spring. Disclosed is a rotational vibration gyro (1) characterized by being provided with a movable weight (4) which is released above a substrate (2) and has a slit (8) passing the center of gravity and extending in the axial direction of a detection axis, a drive electrode (3) which rotationally vibrates the movable weight (4) around the Z axis that passes the center of gravity thereof, a detection electrode (9) which detects the displacement of the movable weight (4) that is swung around the detection axis by Coriolis force, an anchor (6) which is provided so as to project from the substrate (2) and inserted into the slit (8) concentrically with center of gravity and supports the movable weight (4), and two rows of support springs (7) which are hung between the anchor (6) and the movable weight (4), are parallel in the detection axis direction, and are disposed line-symmetrically with respect to the detection axis.
Disclosed is an electronic device, which achieves a reduced thickness, and has conductive wiring easily formed on two semiconductor substrates bonded to each other. Also disclosed is a method for manufacturing the electronic device. The electronic device (1) is provided with: a first semiconductor substrate (2), from which a bonding protrusion (42) protrudes with an insulating film (41) therebetween; a second semiconductor substrate (3), which is bonded, by welding, to the bonding protrusion (42) of the first semiconductor substrate (2) with a conductive bonding material therebetween; a through hole (54), which is formed, in the bonding direction, so as to penetrate the bonding protrusion (42) and the insulating film (41); and a conductive wiring section (44), which is configured of the conductive bonding material applied to the through hole (54) when the bonding by welding is performed, and which carries a current such that the first semiconductor substrate (2) and the second semiconductor substrate (3) have a same potential.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
B81C 3/00 - Assembling of devices or systems from individually processed components
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different subgroups of the same main group of groups , or in a single subclass of ,
44.
METHOD OF INSPECTING ANGULAR VELOCITY SENSOR AND APPARATUS FOR INSPECTING ANGULAR VELOCITY SENSOR
Disclosed are a method of inspecting an angular velocity sensor and an apparatus for inspecting an angular velocity sensor capable of efficiently inspecting in a short time an angular velocity sensor that has at least two detection axes. The method of inspecting an angular velocity sensor is provided with a sensor-setting step of setting an angular velocity sensor (2) in a given orientation, a sensor-rotating step of rotating the set angular velocity sensor (2) about one arbitrary rotary shaft (11), and a sensitivity measuring step of measuring the axis sensitivity for each of at least two detection axes of three detection axes orthogonal to each other in the rotating angular velocity sensor (2). In the sensor-setting step the angular velocity sensor (2) is set in an orientation such that each axis line of the at least two detection axes is set at an angle that is non-orthogonal to the axis line of the rotary shaft (11).
Disclosed is a surface emission type electron-emitting element (1), wherein even when a focusing electrode layer (8) is provided therein, a gate electrode layer (6) and the focusing electrode layer are not electrically connected by a carbon layer (11). Also disclosed is an image pickup device which is provided with the electron-emitting element. Specifically disclosed is an electron-emitting element which is provided with: an electron-emitting layer (3) for emitting electrons from a surface emission part (9); a gate electrode layer which is formed on the surface of the electron-emitting layer with a first insulating layer (5) interposed therebetween; a focusing electrode layer which is formed on the surface of the gate electrode layer with a second insulating layer (7) interposed therebetween, and focuses emitted electrons; an emission recess (10) which penetrates the focusing electrode layer, the second insulating layer, the gate electrode layer and the first insulating layer, and forms a recess-shaped opening to the surface of the surface emission part; and a carbon layer which is formed from the surface of the focusing electrode layer to the inner surface of the emission recess. The carbon layer has an annular discontinuous part (11a) at a film formation part of the emission recess to which a layer end of the second insulating layer faces.
Disclosed is a surface emission type electron-emitting element (1), wherein even when a focusing electrode layer (6) is provided therein, a gate electrode layer (8) and the focusing electrode layer are not electrically connected by a carbon layer (11). Also disclosed is an image pickup device which is provided with the electron-emitting element. Specifically disclosed is an electron-emitting element which is provided with: an electron-emitting layer (3) for emitting electrons from a surface emission part (9); a focusing electrode layer which is formed on the surface of the electron-emitting layer with a first insulating layer (5) interposed therebetween and focuses the emitted electrons; a gate electrode layer which is formed on the surface of the focusing electrode layer with a second insulating layer (7) interposed therebetween; an emission recess (10) which penetrates the gate electrode layer, the second insulating layer, the focusing electrode layer and the first insulating layer and forms a recess-shaped opening to the surface of the surface emission part; a carbon layer which is formed from the surface of the gate electrode layer to the inner surface of the emission recess; and a partial insulation part (12b) for insulating the focusing electrode layer from the carbon layer.
Provided is an image pick-up device capable of appropriately deflecting an electron beam while suppressing the reduction of an aperture ratio. The image pick-up device (1) comprises: a plurality of electron emission sources (23) arranged in a matrix in a horizontal scanning direction and in a vertical scanning direction, each constituting a pixel, and emitting electron beams; a first deflection electrode (52) and a second deflection electrode (53) having a plurality of first strip-shaped electrodes (54) and a plurality of second strip-shaped electrodes (56) disposed alternately in the vertical scanning direction on mutually opposite sides of each pixel line in the horizontal scanning direction and deflecting the electron beams in the vertical scanning direction on a per each pixel line basis; and a vertical deflection power supply unit (58) for variably applying a deflection voltage to each of the first deflection electrode (52) and the second deflection electrode (53) so that a forward/reverse voltage difference occurs at least between the first deflection electrode (52) and the second deflection electrode (53).
Disclosed is a method for bonding semiconductor substrates, by which bonding with high encapsulation rate and high bonding strength is achieved. Also disclosed is an MEMS device which is obtained by bonding semiconductor substrates by this method. Specifically, in a case of semiconductor substrate bonding where a first semiconductor substrate and a second semiconductor substrate are eutectically bonded with each other by interposing an aluminum-containing layer and a germanium layer between the bonding surface of the first semiconductor substrate and the bonding surface of the second semiconductor substrate in such a manner that the aluminum-containing layer and the germanium layer are in contact with each other and by pressing and heating the resulting, the weight ratio of the germanium layer relative to the aluminum-containing layer to be eutectically alloyed together is set to be within the range of 27-52 wt%.
Disclosed is a method for bonding semiconductor substrates, wherein an eutectic alloy does run off the bonding surfaces during the eutectic bonding. Also disclosed is an MEMS device which is obtained by bonding semiconductor substrates by this method. Specifically, a substrate (11) and a substrate (21) are eutectically bonded with each other by pressing and heating the substrate (11) and the substrate (21), while interposing an aluminum-containing layer (31) and a germanium layer (32) between a bonding part (30a) of the substrate (11) and a bonding part (30b) of the substrate (21) in such a manner that the aluminum-containing layer (31) and the germanium layer (32) overlap each other, with an outer edge (32a) of the germanium layer (32) being inwardly set back from the an outer edge (31a) of the aluminum-containing layer (31).
Disclosed is a method for bonding semiconductor substrates, by which a semiconductor substrate that is provided with an MEMS structure and a semiconductor substrate that is provided with integrated circuits can be bonded together by simple processes, while suppressing adverse effects on the MEMS structure. Also disclosed is an MEMS device which is obtained by bonding semiconductor substrates by this method. Specifically a substrate (11), on which an MEMS sensor is fabricated, and a substrate (21), which has a bonding part (30b) on either the front surface or the back surface and is provided with integrated circuits for controlling the MEMS sensor, are laminated such that either the front surface or the back surface of the substrate (11) is in direct contact with the bonding part (30b) of the substrate (21), and pressed and heated to be eutectically bonded together, said bonding part (30b) being a film which is formed so as to have an aluminum-containing layer (31) and a germanium layer (32) in contact with each other.
Disclosed is a light-quantity detecting device (1) comprising: a photoelectric conversion element (10) for converting the quantity of light inputted, into an electric current; a current-voltage converting means (100) including a positive input terminal (In+) connected with the first terminal (P-terminal) of the photoelectric conversion element, a negative input terminal (In-) connected with the second terminal (N-terminal) of the photoelectric conversion element, a negative output terminal (Out-) for reversing the polarity of an electric current inputted to the positive input terminal, to output same as a voltage, a positive output terminal (Out+) for reversing the polarity of an electric current inputted to the negative input terminal, to output same as a voltage, a first negative-feedback resistor connected between the positive input terminal and the negative output terminal, and a second negative-feedback resistor connected between the negative input terminal and the positive output terminal, thereby to zero-bias the photoelectric conversion element and to convert the converted current into a voltage; and an amplifying means (300) for amplifying the converted voltage.
H01L 31/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
A capacitance detection type sensor in which the size of a gap and parallelism between a movable detection electrode portion of a movable weight portion and a fixed detection electrode portion facing the movable detection electrode portion can be precisely formed. The capacitance detection type sensor comprises a conductive movable weight portion (10) which is physically displaced by applied external force, a substrate (2) which supports the movable weight portion (10), a movable detection electrode portion (31) which is provided integrally with the movable weight portion (10) and detects a change in capacitance based on the displacement, a fixed detection electrode portion (32) which faces the movable detection electrode portion (31) and is disposed on the side opposite to the substrate (2) across the movable detection electrode portion (31), and an electrode support portion (11) which is provided in a protruding manner on the substrate (2) and supports the fixed detection electrode portion (32).
G01C 19/56 - Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
G01P 15/125 - Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces with conversion into electric or magnetic values by capacitive pick-up
A rotational vibration gyro in which detection sensitivity in the direction of one detection axis is not affected by detection sensitivity in the direction of the other axis. The rotational vibration gyro has a drive weight (4), drive electrodes (3) for rotatinally vibrating the drive weight (4), a detection weight (5) composed of a pair of flat plate-like detection weights (5A) split along the X-axis and a pair of flat plate-like detection weights (5B) split along the Y-axis, the pairs of detection weights (5A, 5B) vibrating together with the drive weight (4) in response to Coriolis force, an anchor (6) for supporting the drive weight (4) and the detection weight (5), a pair of X-axis weight support springs (7A) and a pair of Y-axis weight support springs (7B), the pairs of support springs (7A, 7B) being arranged to straddle between the anchor (6) and the detection weight (5), a pair of X-axis weight connection springs (8A) and a pair of Y-axis weight connection springs (8B), the pairs of connection springs (8A, 8B) having a function to absorb rotational vibration and a function to transmit Coriolis force and interconnecting the drive weight (4) and the detection weight (5), a pair of X-axis detection electrodes (9A) for detecting displacement of the vibrating pair of detection weights (5A) split along the X-axis, and a pair of Y-axis detection electrodes (9B) for detecting displacement of the vibrating pair of detection weights (5B) split along the Y-axis.
A driving method of a circuit device which comprises a cold cathode electron emission element (21), a MOS transistor (11) in which either of a source region (11s) and a drain region (11d) thereof is electrically connected to one electrode (211) of the cold cathode electron emission element, a first voltage source (71) electrically connected to another electrode (212) of the cold cathode electron emission element, and a second voltage source (72) electrically connected to a semiconductor well region (11w) in which the MOS transistor is formed. The driving method of the circuit device comprising a step of, while forming an electron emission section (21a) within the cold cathode electron emission element, outputting a first potential signal from the first voltage source as well as a second potential signal from the second voltage source, which is different from the first potential signal, so as to allow forward current to flow within a pn junction between the semiconductor well region and the either region (source or drain).
patents
