A device for moving an object including a substrate through an open side of a processing station of a processing apparatus including a support, placeable at the processing station. The device includes a carrier, guided for movement relative to the support along a path predominantly directed in parallel to a reference axis in a reference co-ordinate system. The device includes a device for controlling movement of the carrier and driving the movement in an opposite direction along the path. The device includes a component for holding the object and a suspension mechanism with which the holding component is connected to the carrier. The suspension mechanism is arranged to guide movement of the holding component relative to the carrier along a holding component path. The device is arranged to drive the movement of the holding component along the holding component path. The holding component path is predominantly directed parallel to the reference axis.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
2.
TIN PLATING BATH AND A METHOD FOR DEPOSITING TIN OR TIN ALLOY ONTO A SURFACE OF A SUBSTRATE
The present invention concerns a tin plating bath comprising tin ions; titanium ions as reducing agent suitable to reduce tin ions to metallic tin; and at least one compound selected from the group consisting sulfites, dithionites, thiosulfates, tetrathionates, polythionates, disulfites, sulfides, disulfide, polysulfide, elemental sulfur or mixtures thereof. The present invention further discloses a method of depositing tin or a tin alloy onto a surface of a substrate. The tin plating bath is particularly suitable to be used in the electronics and semiconductor industry.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
C23C 18/52 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups
3.
A METHOD FOR ACTIVATING A SURFACE OF A NON-CONDUCTIVE OR CARBON-FIBRES CONTAINING SUBSTRATE FOR METALLIZATION
Method for activating a surface of a non-conductive or carbon-fibres containing substrate for metallization, the method including:
(a) providing said substrate,
(b) providing an aqueous, palladium-free activation composition comprising
(i) a first species of dissolved transition metal ions and additionally metal particles thereof,
(ii) at least one complexing agent,
(iii) permanently or temporarily at least one reducing agent,
(iv) optionally one or more second species of dissolved metal ions different from the first species,
(c) contacting the substrate with said activation composition such that a transition metal or a transition metal alloy is deposited on the surface of said substrate and an activated surface for metallization is obtained.
The present invention relates to a method for increasing adhesion strength between a surface of a metal, a metal alloy or a metal oxide and a surface of an organic material comprising as a main step contacting of at least one section of said metal, metal alloy or metal oxide with a specific azole silane compound, a specific azole silane oligomer, or a mixture comprising said compound and/or said oligomer. Furthermore, the present invention relates to a use of said specific azole silane compound, said specific azole silane oligomer, or said mixture in a method for increasing adhesion strength between a surface of a metal, a metal alloy or a metal oxide and a surface of an organic material.
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
B32B 7/12 - Interconnection of layers using interposed adhesives or interposed materials with bonding properties
B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
C09J 4/00 - Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
5.
METHOD FOR OBTAINING INFORMATION ABOUT A LAYER OF AN ORGANIC SOLDERABILITY PRESERVATIVE ON A PRINTED CIRCUIT BOARD
A method for obtaining information about a layer of an organic solderability preservative on a printed circuit board, the method including
Providing or producing a printed circuit board (16) having a copper layer (18) covering a part of an area of the printed circuit board (16),
Providing a fluorescence measuring system (10),
the method including following steps
a) Obtaining (S2) information about the location of the openings (21) on the printed circuit board (16),
b) Selecting (S3) at least one of the openings (21), thereby obtaining at least one selected opening,
c) Moving (S4) the radiation source (11) and the printed circuit board (16) relatively to each other,
d) Detecting (S5) the fluorescent radiation (23).
The present invention is related to an aqueous post treatment composition for providing a post treatment layer on at least a part of a passivation layer, which is covering at least a part of a zinc layer being on at least a part of an iron containing substrate, characterized in that the aqueous post treatment composition comprises at least one chromium (III) ion source and at least one compound containing the chemical element silicon; wherein a molar ratio of silicon versus chromium is given in said composition, with the proviso that said molar ratio is ranging from 2600:1 to 1:1 for the zinc layer obtained by an electrolytic acid zinc deposition process; or that said molar ratio is ranging from 5200:1 to 1:1 for the zinc layer obtained by an electrolytic alkaline zinc deposition process.
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C25D 3/22 - Electroplating; Baths therefor from solutions of zinc
C25D 5/48 - After-treatment of electroplated surfaces
C23C 22/02 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
C25D 7/00 - Electroplating characterised by the article coated
The present invention is related to a membrane anode system for electrolytic zinc-nickel alloy deposition, a method for electrolytic deposition of a zinc-nickel alloy layer on a substrate to be treated using a membrane anode system, and the use of a membrane anode system for acid or alkaline electrolytic deposition of a zinc-nickel alloy layer on a substrate to be treated by such a method.
Galvanic nickel or nickel alloy electroplating bath for depositing a semi-bright nickel or semi-bright nickel alloy coating in which the electroplating bath includes at least one compound having the general formula (1) and/or a salt thereof
wherein the electroplating bath further comprises at least one acetylenic compound and chloral hydrate.
A method for depositing a chromium or chromium alloy layer on at least one substrate, the method comprising the steps (a) providing an aqueous deposition bath with a pH in the range from 4.1 to 6.9, the bath comprising trivalent chromium ions, formate ions, and optionally sulfate ions, (b) providing the at least one substrate and at least one anode, (c) immersing the at least one substrate in the aqueous deposition bath and applying an electrical current such that the chromium or chromium alloy layer is deposited on the substrate, the substrate being the cathode, wherein, if during or after step (c) the trivalent chromium ions have a concentration below a target concentration of trivalent chromium ions, then (d) adding dissolved trivalent chromium formate to the aqueous deposition bath such that trivalent chromium ions are present in a higher concentration than before step (d), with the proviso that solid trivalent chromium formate is dissolved in a separated partial volume taken from the aqueous deposition bath to obtain said dissolved trivalent chromium formate for step (d).
The invention relates to an aqueous alkaline pre-treatment solution for use prior to deposition of a palladium activation layer on a substrate in manufacturing an article with an integrated circuit and a method and use thereof, wherein the solution comprises:
at least one hydroxycarboxylic acid or salt thereof according to the general formula (I)
The invention relates to an aqueous alkaline pre-treatment solution for use prior to deposition of a palladium activation layer on a substrate in manufacturing an article with an integrated circuit and a method and use thereof, wherein the solution comprises:
at least one hydroxycarboxylic acid or salt thereof according to the general formula (I)
[RCH2—(RCH)n—COO−]m Mm+ (I)
The invention relates to an aqueous alkaline pre-treatment solution for use prior to deposition of a palladium activation layer on a substrate in manufacturing an article with an integrated circuit and a method and use thereof, wherein the solution comprises:
at least one hydroxycarboxylic acid or salt thereof according to the general formula (I)
[RCH2—(RCH)n—COO−]m Mm+ (I)
wherein n is integer from 2 to 4 and m is 1 or 2,
R is independently H or OH with proviso that at least one R is OH, and wherein Mm+ with m: 1 is hydrogen, ammonium or alkali metal; or Mm+ with m: 2 is earth alkali metal,
at least one polyoxyethylene sorbitan fatty acid ester,
at least one sulphonated fatty acid or a salt thereof.
An end effector for clamping a slab formed substrate (2) having a rim section (5) that is arranged at least approximately and at least partially in a substrate main plane comprises at least a pressing device (10) providing at least a pressing area (11), and at least a support device (20) providing at least a support area (21). The end effector (1) is configured, in a clamped state of the substrate (2), to clamp the substrate (2) at a first surface (3) by a pressing area (11) of a pressing device (10) and at a second surface (4) that is, in regard to the first surface (3), arranged at the opposite side of the substrate (2) by a support area (21) of a support device (20). The end effector comprises a guide (15) for guiding the pressing device (10) relative to the support device (20).
A method for post-treatment of a chromium finish surface to improve corrosion resistance comprising a) providing a substrate having a chromium finish surface, and at least one intermediate layer between the chromium finish surface and the substrate, selected from the group consisting of nickel, nickel alloys, copper and copper alloys, wherein the chromium finish surface is a surface of a trivalent chromium plated layer, obtained by electroplating the substrate, having the at least one intermediate layer, in a plating bath, the plating bath comprising chromium (III) ions; b) contacting the chromium finish surface with an aqueous solution, comprising a permanganate, at least one compound which is selected from a phosphorus-oxygen compound, a hydroxide, a nitrate, a borate, boric acid, a silicate, or a mixture of two or more of these compounds; c) forming a transparent corrosion protection layer onto the chromium finish surface during step b.
C25D 9/06 - Electrolytic coating other than with metals with inorganic materials by anodic processes
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
The present invention relates to a specific azole silane compound, an oligomer thereof, a mixture comprising said compound and/or said oligomer, as well as a respective storage and working solution. Furthermore, the present invention relates to a synthesis method for said specific azole silane compound, and the use of said working solution as a surface treatment solution.
The present invention relates to a composition comprising one or a mixture of two or more quinoline-polyethylene glycol containing compound, each quinoline-polyethylene glycol containing compound comprising:
one to three quinoline group and
one or more polyethylene glycol group,
wherein, in each said quinoline-polyethylene glycol containing compound, one to three of said one to three quinoline group is connected via one or more oxygen atom of said one or more polyethylene glycol group via carbon 6 or carbon 8 of said one to three quinoline group.
An electroless copper plating bath for depositing a copper or copper alloy layer on a surface of a substrate, including copper ions; a reducing agent; a complexing agent for copper ions; wherein the bath further includes at least one compound according to formula (1):
4 form together an aromatic ring, respectively.
C23C 18/40 - Coating with copper using reducing agents
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
The present invention is related to an acidic zinc or zinc-nickel alloy electroplating bath for depositing a zinc or zinc-nickel alloy layer and a method for zinc or zinc-nickel alloy electroplating making use of such an electroplating bath.
d) at least one phosphonate compound according to formula (1)
The invention further is directed to the use of the bath and a method for depositing a gold layer on a surface of a substrate. The bath is particularly suitable in the manufacture of printed circuit boards, IC substrates, semiconducting devices, interposers made of glass and the like.
wherein in step (i) the outermost layer is electrolytically deposited from aqueous, acidic deposition composition, the composition including trivalent chromium ions, at least one organic acid comprising an isothiureido moiety and/or salts thereof, and chloride ions in amount of 0 wt-% to 0.1 wt-%.
C25D 3/06 - Electroplating; Baths therefor from solutions of chromium from solutions of trivalent chromium
C25D 3/56 - Electroplating; Baths therefor from solutions of alloys
C25D 5/10 - Electroplating with more than one layer of the same or of different metals
C25D 5/12 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
19.
Plating compositions for electrolytic copper deposition, its use and a method for electrolytically depositing a copper or copper alloy layer onto at least one surface of a substrate
The present invention relates to a plating composition for electrolytic copper deposition, comprising copper ions, halide ions and at least one acid, at least one benzothiazole compound, at least one phenazine dye and at least one ethanediamine derivative. The present invention further concerns the use of above plating composition and a method for electrolytically depositing a copper or copper alloy layer onto at least one surface of a substrate.
The present invention concerns a metal or metal alloy deposition composition, particularly a copper or copper alloy deposition composition, for electrolytic deposition of a metal or metal alloy layer, particularly for electrolytic deposition of a copper or copper alloy layer, comprising at least one type of metal ions to be deposited, preferably copper ions, and at least one imidazole based plating compound. The present invention further concerns a method for preparation of the plating compound, the plating compound itself and its use in a metal or metal alloy deposition composition. The inventive metal or metal alloy deposition composition can be preferably used for filling recessed structures, in particular those having higher diameter to depth aspect ratios.
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 3/58 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of copper
C08G 73/06 - Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule; Polyhydrazides; Polyamide acids or similar polyimide precursors
C25D 9/02 - Electrolytic coating other than with metals with organic materials
21.
Method for electrolytically depositing a zinc nickel alloy layer on at least a substrate to be treated
The present invention is related to a method for electrolytically depositing a zinc-nickel alloy layer on a substrate, wherein the method comprises an interrupting of the execution of the electrolytical deposition of a zinc-nickel alloy layer on the surface of a substrate by terminating applying the current from the external current source to each of the soluble zinc anode(s) and to each of the soluble nickel anode(s); and wherein afterwards at least one soluble zinc anode, which is remaining in the electrolysis reaction container, is electrically connected by an electrical connection element to form an electrical connection to at least one soluble nickel anode, which is remaining in the electrolysis reaction container, for at least a part of the defined period of time in which no current from the external current source is applied to each of the soluble zinc anode(s) and to each of the soluble nickel anode(s).
An electroless aqueous gold plating bath, comprising at least one source of gold ions and at least one reducing agent for gold ions, characterized in that it comprises at least one ethylenediamine derivative as plating enhancer compound according to formula (I)
An electroless aqueous gold plating bath, comprising at least one source of gold ions and at least one reducing agent for gold ions, characterized in that it comprises at least one ethylenediamine derivative as plating enhancer compound according to formula (I)
An electroless aqueous gold plating bath, comprising at least one source of gold ions and at least one reducing agent for gold ions, characterized in that it comprises at least one ethylenediamine derivative as plating enhancer compound according to formula (I)
wherein the residues R1 and R2 comprise 2 to 12 carbon atoms and are selected from the group consisting of branched alkyl, unbranched alkyl, cycloalkyl or combinations thereof wherein the individual residues R1 and R2 are the same or different and a method of depositing of gold. The electroless aqueous gold plating bath is suitable to provide soft gold layers useful for wire bonding and soldering applications which are required for electronic components.
C23C 18/44 - Coating with noble metals using reducing agents
23.
Pyridinium compounds, a synthesis method therefor, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths
The present invention concerns pyridinium compounds, a synthesis method for their preparation, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths.
The plating baths are particularly suitable for use in filling of recessed structures in the electronics and semiconductor industry including dual damascene applications.
C07D 401/12 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings linked by a chain containing hetero atoms as chain links
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 3/58 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of copper
at least one of a dimer of a compound of formula (I) or mixtures thereof
a method for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy with said aqueous bath.
C07D 401/10 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings linked by a carbon chain containing aromatic rings
C25D 3/56 - Electroplating; Baths therefor from solutions of alloys
Aqueous acidic copper electroplating bath comprising: copper ions; at least one acid; halide ions; at least one sulfur containing compound selected form the group consisting of sodium 3-mercaptopropylsulfonate, bis(sodiumsulfopropyl)disulfide, 3-(N,N-dimethylthiocarbamoyl)-thiopropanesulfonic acid or the respective sodium salt thereof and mixtures of the aforementioned; at least one amine reaction product of diethylamine with epichlorohydrin or an amine reaction product of isobutyl amine with epichlorohydrin or mixtures of these reaction products; at least one ethylene diamine compound selected from the group having attached EO-PO-block polymers, attached EO-PO-block polymers and sulfosuccinate groups and mixtures thereof; at least one aromatic reaction product of benzylchloride with at least one polyalkylenimine and a method for electrolytically depositing of a copper coating using the electroplating bath.
The present invention refers to a new type of transport roller providing a modified surface to provide improved transport properties for new substrates. Furthermore, it refers to horizontal transport systems beneficially utilizing such transport rollers, especially for providing retaining roller pairs. Additionally, the present invention refers to a treatment device containing such transport roller or horizontal transport system. Furthermore, it refers to a method for treating a substrate and the use of such transport roller.
B65H 5/06 - Feeding articles separated from piles; Feeding articles to machines by rollers
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
The present invention refers to a substrate holder loading device to be used in a clean room and a clean room treatment device containing such substrate holder loading device. Furthermore, the present invention refers to a method of loading a substrate holder with a first substrate, more preferably with a first and a second substrate.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B65G 47/91 - Devices for picking-up and depositing articles or materials incorporating pneumatic, e.g. suction, grippers
C25D 17/06 - Suspending or supporting devices for articles to be coated
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H02K 7/116 - Structural association with clutches, brakes, gears, pulleys or mechanical starters with gears
H02K 37/24 - Structural association with auxiliary mechanical devices
30.
Method for electrolytically passivating an outermost chromium or outermost chromium alloy layer to increase corrosion resistance thereof
with the proviso that during or after the chemical reducing the one or more than one organic acid residue anion is present for the first time in the passivation solution.
The present invention concerns a tin plating bath comprising tin ions; at least one complexing agent selected from the group consisting of pyrophosphate ions, linear polyphosphate ions and cyclic polyphosphate ions and a nitrogen and sulfur containing stabilizing additive and titanium (III) ions as a reducing agent suitable to reduce tin ions to metallic tin. The present invention further discloses a method of depositing tin or a tin alloy onto a surface of a substrate. The tin plating bath is particularly suitable to be used in the electronics and semiconductor industry.
B22F 7/00 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting
C25D 3/32 - Electroplating; Baths therefor from solutions of tin characterised by the organic bath constituents used
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/52 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups
C09D 5/00 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
C09D 5/10 - Anti-corrosive paints containing metal dust
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
C23C 18/00 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
32.
Method of forming a solderable solder deposit on a contact pad
A method of forming a solderable solder deposit on a contact pad, comprising the steps of providing an organic, non-conductive substrate which exposes said contact pad under an opening of a first non-conductive resist layer, depositing a conductive layer inside and outside the opening such that an activated surface results, thereby forming an activated opening, electrolytically depositing nickel or nickel alloy into the activated opening such that nickel/nickel alloy is deposited onto the activated surface, electrolytically depositing tin or tin alloy onto the nickel/nickel alloy, with the proviso that the electrolytic deposition of later steps results in an entirely filled activated opening, wherein the entirely filled activated opening is completely filled with said nickel/nickel alloy, or in the entirely filled activated opening the total volume of nickel/nickel alloy is higher than the total volume of tin and tin alloy, based on the total volume of the entirely filled activated opening.
C25D 5/54 - Electroplating of non-metallic surfaces
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
C25D 7/00 - Electroplating characterised by the article coated
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 3/10 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
The present invention refers to a method for processing a wafer like substrate using a touching gripper and a touchless gripper. Furthermore, the present invention refers to an apparatus for processing a wafer-like substrate containing a touching gripper and a touchless gripper. Additionally, the present invention refers to the use of an inventive apparatus to process a wafer-like substrate.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
C25F 1/00 - Electrolytic cleaning, degreasing, pickling, or descaling
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
34.
Non-aqueous stripping composition and a method of stripping an organic coating from a substrate
30 hydrocarbon group, wherein the high-boiling solvent has a boiling point of at least 100° C.; B—at least one high-boiling co-solvent selected from the group, consisting of high-boiling glycols, glycol ethers and amine compounds, wherein the high-boiling co-solvent has a boiling point of at least 100° C.; and C—at least one pH-active agent either selected from the group, consisting of acid compounds or selected from the group, consisting of hydroxide compounds.
Device for vertical galvanic metal deposition on a substrate comprising a first and a second device, arranged vertically parallel to each other; the first device comprising a first anode having a plurality of through-going conduits and a first carrier having a plurality of through-going conduits; wherein said first anode and said first carrier are connected to each other; wherein the second device comprises a first substrate holder adapted to receive a first substrate to be treated, wherein said first substrate holder at least partially surrounds the first substrate along its outer frame, wherein the first device further comprises a plurality of plugs, each plug comprising a through-going channel, each plug arranged such that it runs from the backside of the first carrier through a through-going conduit of the first carrier and further through the conduit of the first anode element, and the plugs are detachably connected to the first device.
A method for manufacturing a printed circuit board, comprising in order steps (i) providing a non-conductive substrate having on a surface copper circuitry with a copper surface, wherein said surface is chemically treated by (a) oxidation and subsequent reduction reaction and/or (b) organic compound attached to said surface, a permanent, non-conductive, not fully polymerized cover layer covering at least partially said surface, (ii) thermally treating the substrate with the cover layer at temperature from 140° C. to 250° C. in atmosphere containing molecular oxygen at 100000 ppm or less, based on the total volume of the atmosphere, wherein a substrate with a permanent, non-conductive cover layer is obtained, with the provisos that (ii) is after (i) but before any metal or metal alloy is deposited onto the cover layer, and that in (ii) the cover layer is fully polymerized in one thermal treating step, if the cover layer is a solder mask.
The present invention is to provide a chrome-plated part having a corrosion resistance in normal and specific circumstances and not requiring additional treatments after chrome plating, and to provide a manufacturing method of such a chrome-plated part.
a and having at least any one of a microporous structure and a microcrack structure.
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C25D 5/00 - Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
C25D 3/06 - Electroplating; Baths therefor from solutions of chromium from solutions of trivalent chromium
C25D 3/12 - Electroplating; Baths therefor from solutions of nickel or cobalt
38.
Method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor
The present invention relates to a method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor, the use of an acidic palladium plating bath (as defined below) for directly depositing metallic palladium or a palladium alloy onto a non-activated surface of a doped or non-doped gallium nitride semiconductor, and a palladium or palladium alloy coated, doped or non-doped gallium nitride semiconductor.
C23C 18/44 - Coating with noble metals using reducing agents
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
39.
Acidic aqueous composition for electrolytic copper plating
(ii) one or more than one compound of Formula (Ia)
with the definitions given below, the use of the acidic aqueous composition according to the invention for electrolytic copper plating, the use of the compound of Formula (Ia) in an acidic aqueous composition for electrolytic metal plating, a method of electrolytic copper plating using the acidic aqueous composition according to the invention, and specific compounds derived from Formula (Ia) for an acidic aqueous composition for electrolytic metal plating.
A method for post-treatment of a chromium finish surface to improve corrosion resistance comprising a) providing a substrate having a chromium finish surface, and at least one intermediate layer between the chromium finish surface and the substrate, selected from the group consisting of nickel, nickel alloys, copper and copper alloys, wherein the chromium finish surface is a surface of a trivalent chromium plated layer, obtained by electroplating the substrate, having the at least one intermediate layer, in a plating bath, the plating bath comprising chromium (III) ions; b) contacting the chromium finish surface with an aqueous solution, comprising a permanganate, at least one compound which is selected from a phosphorus-oxygen compound, a hydroxide, a nitrate, a borate, boric acid, a silicate, or a mixture of two or more of these compounds; c) forming a transparent corrosion protection layer onto the chromium finish surface during step b.
C25D 9/06 - Electrolytic coating other than with metals with inorganic materials by anodic processes
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
41.
Lead-frame structure, lead-frame, surface mount electronic device and methods of producing same
A lead-frame structure having two faces and exposing a treated silver surface on at least one of said two faces, the treated silver surface(s) serving the wire bonding, which lead-frame structure has a surface which, after applying resin to it, has excellent adhesion even under severe testing conditions, such as the IPC/JEDEC J-STD-20 MSL standard, and a surface mount electronic device comprising a lead-frame or lead-frame entity and at least one semiconductor device mounted thereon, wherein the lead-frame or lead-frame entity exposes a treated silver surface on at least one of the two faces thereof, wherein the treated silver surface(s) serve(s) the wire bonding, and wherein a resin is applied to the lead-frame or lead-frame entity, and which surface mount electronic device has excellent adhesion of the surface of the lead-frame or lead-frame entity even under severe testing conditions.
C25D 3/46 - Electroplating; Baths therefor from solutions of silver
C25D 5/02 - Electroplating of selected surface areas
C25D 5/48 - After-treatment of electroplated surfaces
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
C25D 5/34 - Pretreatment of metallic surfaces to be electroplated
C23C 18/54 - Contact plating, i.e. electroless electrochemical plating
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
C23C 18/18 - Pretreatment of the material to be coated
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
42.
Process for depositing a metal or metal alloy on a surface of a substrate including its activation
A process for depositing metal or metal alloy on a substrate including treating the substrate surface with an activation solution comprising a source of metal ions so the metal ions are adsorbed on the substrate surface, treating the obtained substrate surface with a treatment solution containing an additive selected from thiols, thioethers, disulphides and sulphur containing heterocycles, and a reducing agent suitable to reduce the metal ions adsorbed on the substrate surface selected from boron based reducing agents, hypophosphite ions, hydrazine and hydrazine derivatives, ascorbic acid, iso-ascorbic acid, sources of formaldehyde, glyoxylic acid, sources of glyoxylic acid, glycolic acid, formic acid, sugars, and salts of aforementioned acids; and subsequently treating the substrate surface with a metallizing solution comprising a source of metal ions to be deposited such that a metal or metal alloy is deposited thereon.
C23C 18/20 - Pretreatment of the material to be coated of organic surfaces, e.g. resins
C23C 18/24 - Roughening, e.g. by etching using acid aqueous solutions
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
H05K 3/12 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using printing techniques to apply the conductive material
43.
Composition and process for metallizing nonconductive plastic surfaces
The present invention relates to a process for metallizing electrically nonconductive plastic surfaces of articles using the etching solution. The etching solution is based on a stabilized acidic permanganate solution. After the treatment with the etching solution, the articles can be metallized.
C25D 5/54 - Electroplating of non-metallic surfaces
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
44.
Imidazoyl urea polymers and their use in metal or metal alloy plating bath compositions
The present invention relates to imidazoyl urea polymers and their use in aqueous acidic plating baths for metal or metal alloy deposition such as electrolytic deposition of copper or alloys thereof in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of metal ions and an imidazoyl urea polymer. The plating bath is particularly useful for filling recessed structures and build-up of pillar bump structures.
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C07C 275/22 - Derivatives of urea, i.e. compounds containing any of the groups the nitrogen atoms not being part of nitro or nitroso groups having nitrogen atoms of urea groups bound to acyclic carbon atoms of an unsaturated carbon skeleton containing rings other than six-membered aromatic rings
C07D 233/61 - Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, attached to ring carbon atoms with hydrocarbon radicals, substituted by nitrogen atoms not forming part of a nitro radical, attached to ring nitrogen atoms
45.
Plating bath composition and method for electroless plating of palladium
The present invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the present invention comprises a source for palladium ions, a reducing agent for palladium ions and an aromatic compound. The aqueous plating bath composition has an increased deposition rate for palladium while maintaining bath stability. The aqueous plating bath composition has also a prolonged life time. The aromatic compounds of the present invention allow for adjusting the deposition rate to a constant range over the bath life time and for electrolessly depositing palladium layers at lower temperatures. The aromatic compounds of the present invention activate electroless palladium plating baths having a low deposition rate and reactivate aged electroless palladium plating baths.
C23C 18/44 - Coating with noble metals using reducing agents
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
46.
Lead-frame structure, lead-frame, surface mount electronic device and methods of producing same
A method of producing a lead-frame structure having two faces and exposing a treated silver surface on at least one of the two faces, the treated silver surface(s) serving the wire bonding, which yields a surface which, after applying resin to it, has excellent adhesion even under severe testing conditions, such as the IPC/JEDEC J-STD-20 MSL standard, and a method of producing a surface mount electronic device including a lead-frame or lead-frame entity and at least one semiconductor device mounted thereon, wherein the lead-frame or lead-frame entity exposes a treated silver surface on at least one of the two faces, wherein the treated silver surface(s) serve(s) the wire bonding, and wherein a resin is applied to the lead-frame or lead-frame entity, which method yields excellent adhesion of the surface of the lead-frame or lead-frame entity even under severe testing conditions.
C25D 3/46 - Electroplating; Baths therefor from solutions of silver
C25D 5/02 - Electroplating of selected surface areas
C25D 5/48 - After-treatment of electroplated surfaces
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
C25D 5/34 - Pretreatment of metallic surfaces to be electroplated
C23C 18/54 - Contact plating, i.e. electroless electrochemical plating
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
C23C 18/18 - Pretreatment of the material to be coated
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
47.
Method for monitoring the total amount of brighteners in an acidic copper/copper alloy plating bath and controlled process for plating
The present invention relates to a method for monitoring the total amount of brighteners in an acidic copper/copper alloy plating bath during a copper/copper alloy plating process, the use of such a method for controlling a plating process, a controlled process for electrolytically depositing copper/copper alloy onto a substrate utilizing the method for monitoring according to the present invention, and the use of one or more than one redox active compound for monitoring and/or determining the total amount of brighteners in the acidic copper/copper alloy plating bath.
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
G01N 27/42 - Measuring deposition or liberation of materials from an electrolyte; Coulometry, i.e. measuring coulomb-equivalent of material in an electrolyte
An etching solution for copper and copper alloy surfaces comprising at least one acid, at least one oxidising agent suitable to oxidise copper, at least one source of halide ions and further at least one polyamide containing at least one polymeric moiety according to formula (I)
1 is a monovalent residue independently from each other selected from the group consisting of substituted or unsubstituted C1-C8-alkyl groups and a method for its use are provided. Such etching solution is particularly useful for retaining the shape of treated copper and copper alloy lines.
C23F 1/18 - Acidic compositions for etching copper or alloys thereof
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
C09K 13/06 - Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
49.
Aqueous indium or indium alloy plating bath and process for deposition of indium or an indium alloy
a surfactant according to formula (I)
a dihydroxybenzene derivative according to formula (II)
and a process for deposition of indium or an indium alloy wherein the disclosed bath is used.
This invention concerns a substrate holder reception apparatus (1) for clamping a substrate holder (11) in a substrate holder clamping direction (SHCD) in a predetermined position of the substrate holder (11) and releasing the substrate holder (11), comprising at least one substrate holder connection device (21) for mechanical aligning and electrically contacting of the substrate holder (11), wherein the substrate holder connection device (21) comprises a separate substrate holder alignment device (211) for aligning the substrate holder (11) with the substrate holder connection device (21) in an alignment direction, and a separate substrate holder contact device (212) for electrically contacting the substrate holder (11). Further, the invention concerns an electrochemical treatment apparatus (5) comprising the substrate holder reception apparatus (1).
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
51.
Plating bath composition and method for electroless plating of palladium
The invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the invention comprises a source for palladium ions, a reducing agent for palladium ions and an unsaturated compound. The aqueous plating bath composition according to the invention has an improved stability against undesired decomposition due to the unsaturated compounds while keeping the deposition rate for palladium at the desired satisfying value. The aqueous plating bath composition has also a prolonged life time. The unsaturated compounds of the invention allow for adjusting the deposition rate to a satisfying range over the bath life time and for electrolessly depositing palladium layers at lower temperatures.
C23C 18/44 - Coating with noble metals using reducing agents
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
C25D 7/00 - Electroplating characterised by the article coated
C25F 5/00 - Electrolytic stripping of metallic layers or coatings
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
C25D 5/10 - Electroplating with more than one layer of the same or of different metals
C25D 3/56 - Electroplating; Baths therefor from solutions of alloys
53.
Method for increasing adhesion between a chromium surface and a lacquer
C25D 5/12 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
C25D 5/34 - Pretreatment of metallic surfaces to be electroplated
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C09D 5/00 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
C09D 5/44 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes for electrophoretic applications
This invention concerns a method for galvanic metal deposition of a substrate using an anode and an electrolyte, wherein from each of a plurality of electrolyte nozzles a locally confined electrolyte stream is directed towards a part of a substrate surface which is to be treated, wherein a relative movement is carried out between the substrate and the electrolyte stream during deposition, characterized in that a first movement is carried out along a first path, wherein at least along a part of the first path a second movement is carried out along a second path, wherein the first and the second movement each are relative movements between the electrolyte stream and the substrate. Further, the invention concerns a substrate holder reception apparatus and an electrochemical treatment apparatus.
The present invention relates to aqueous acidic plating baths for copper deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of copper ions, at least one acid and an additive obtainable by a reaction of at least one aminoglycidyl compound comprising at least one amino group which bears at least one glycidyl moiety and at least one second compound selected from ammonia and amine compounds wherein the amine compounds comprise at least one primary or secondary amino group with the proviso that the aminoglycidyl compound contains at least one polyoxyalkylene residue and/or the amine compound contains at least one polyoxyalkylene residue. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.
The present invention relates to bisurea derivatives and their use in aqueous plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of copper ions and a bisurea derivative. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.
C08G 73/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen or carbon, not provided for in groups
The present invention relates to an acidic aqueous composition for treating of zirconium-pretreated metal-based substrate surfaces such as steel metals or aluminium surfaces, a process for treating the substrate surfaces with the composition and the use of the composition as post-treatment of zirconium-pretreated metal-based substrate surfaces for subsequent electrocoating of the surfaces to increase corrosion resistance of said metal-based surfaces prior to electro-coating (e-coat) applications and increases detergent and chemical resistance of treated surfaces used in the white goods industry. The acidic aqueous composition comprises trivalent chromium ions; and hexafluorozirconate ions; characterized in that the source of trivalent chromium ions is a trivalent chromium nitrate salt.
C23C 22/73 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals characterised by the process
C23C 22/80 - Pretreatment of the material to be coated with solutions containing titanium or zirconium compounds
C23C 22/34 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 containing fluorides or complex fluorides
C25D 9/02 - Electrolytic coating other than with metals with organic materials
59.
Electrolytic copper plating bath compositions and a method for their use
The present invention relates to aqueous acidic plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of copper ions, at least one acid and at least one guanidine compound. The plating bath is particularly useful for plating recessed structures with copper and build-up of copper pillar bump structures.
The present invention relates to an activation composition for activation of silicon substrates, which is an aqueous solution comprising a source of palladium ions, a source of fluoride ions and at least two aromatic acids. The present invention further relates to a method for its use and optionally for subsequent metallization of such treated substrates. The method can be employed in semiconductor and solar cell manufacturing.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H01L 21/461 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
C23C 18/36 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents using hypophosphites
61.
Method and apparatus for electroplating a metal onto a substrate
For improving the current transfer during the electrolytic metallization of workpieces, a method is proposed: (a) providing a metal depositing apparatus 17, in which the workpiece, at least one anode 40, 41 and a metal deposition electrolyte AE are arranged and which has a device for electric current generation 60 and at least one current feeding device 31 with in each case at least one electrical contact element 34, 35 for making electrical contact with the workpiece; (b) bringing the at least one electrical contact element 34, 35 into contact with the workpiece; and (c) feeding electric current to the workpiece via the at least one electrical contact element 34, 35 in order that the deposition metal deposits on the workpiece. Before method step (b), in a further method step (d), deposition metal is deposited on the at least one electrical contact element 34, 35.
C25D 17/28 - Apparatus for electrolytic coating of small objects in bulk with means for moving the objects individually through the apparatus during the treatment
C25D 17/00 - Constructional parts, or assemblies thereof, of cells for electrolytic coating
C25D 17/06 - Suspending or supporting devices for articles to be coated
A novel method for the manufacturing of fine line circuitry on a transparent substrates is provided, the method comprises the following steps in the given order providing a transparent substrate, depositing a pattern of light-shielding activation layer on at least a portion of the front side of said substrate, placing a photosensitive composition on the front side of the substrate and on the pattern of light-shielding activation layer, photo-curing the photosensitive composition from the back side of the substrate with a source of electromagnetic radiation, removing any uncured remnants of the photosensitive composition; and thereby exposing recessed structures and deposition of at least one metal into the thus formed recessed structures whereby a transparent substrate with fine line circuitry thereon is formed. The method allows for very uniform and fine line circuitry with a line and space dimension of 0.5 to 10 μm.
G03F 7/09 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers
G03F 7/095 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
G03F 7/11 - Photosensitive materials - characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/18 - Pretreatment of the material to be coated
C23C 18/20 - Pretreatment of the material to be coated of organic surfaces, e.g. resins
C23C 18/40 - Coating with copper using reducing agents
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
64.
Plating bath compositions for electroless plating of metals and metal alloys
The present invention relates to additives which may be employed in electroless metal and metal alloy plating baths and a process for use of said plating baths. Such additives reduce the plating rate and increase the stability of electroless plating baths and therefore, such electroless plating baths are particularly suitable for the deposition of said metal or metal alloys into recessed structures such as trenches and vias in printed circuit boards, IC substrates and semiconductor substrates. The electroless plating baths are further useful for metallization of display applications.
C23C 18/50 - Coating with alloys with alloys based on iron, cobalt or nickel
C23C 18/36 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents using hypophosphites
C23C 18/40 - Coating with copper using reducing agents
65.
Method for electromagnetic shielding and thermal management of active components
The present invention concerns a method for forming a metal layer for electromagnetic shielding and thermal management of active components, preferably by wet chemical metal plating, using an adhesion promotion layer on the layer of molding compound and forming at least one metal layer on the adhesion promotion layer or forming at least one metal layer on the adhesion promotion layer by wet chemical metal plating processes.
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices
H01L 23/552 - Protection against radiation, e.g. light
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/373 - Cooling facilitated by selection of materials for the device
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/36 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents using hypophosphites
C23C 18/40 - Coating with copper using reducing agents
C23C 18/50 - Coating with alloys with alloys based on iron, cobalt or nickel
C23C 18/54 - Contact plating, i.e. electroless electrochemical plating
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
66.
Substrate holder for vertical galvanic metal deposition
A substrate holder for vertical galvanic metal deposition on a substrate, comprising a first substrate holder part and a second substrate holder part, wherein both said parts comprise an inner metal comprising part and an outer non-metallic part in which the substrate holder further comprises a hanging element in each substrate holder part, a first sealing element in each substrate holder part, a second sealing element between the inner metal comprising part and the outer non-metallic part of the substrate holder, a fastening system for detachably fastening both substrate holder parts to each other, a first contact element in each substrate holder part for forwarding current from an outer source through the hanging element to the at least second contact element, and a second contact element in each substrate holder part for forwarding current from the at least first contact element to the substrate to be treated.
C25D 17/06 - Suspending or supporting devices for articles to be coated
C25D 17/00 - Constructional parts, or assemblies thereof, of cells for electrolytic coating
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
67.
3-(carbamoyl) pyridinium-1-YL-propane-1-sulfonates useful in electroplating baths
Disclosed is a chemical compound useful in a galvanic nickel or nickel alloy electroplating bath for depositing a semi-bright nickel or bright nickel alloy coating characterized in that the chemical compound has general formula IA:
4 taken together with the N atom form a pyrrolidine ring or a morpholine ring.
The present invention relates to an acidic zinc or zinc-nickel alloy plating bath composition comprising a source for zinc ions, optionally a source for nickel ions, a source for chloride ions and at least one dithiocarbamyl alkyl sulfonic acid or salt thereof. Said plating bath composition and the corresponding plating method result in zinc or zinc-nickel alloy layers having an improved throwing power and thickness distribution, particularly when plating substrates having a complex shape and/or in rack-and-barrel plating.
The present invention relates to a method for reducing the optical reflectivity of a copper and copper alloy circuitry wherein a thin palladium or palladium alloy layer is deposited by immersion-type plating onto said copper or copper alloy. Thereby, a dull greyish or greyish black or black layer is obtained and the optical reflectivity of said copper or copper alloy circuitry is reduced. The method according to the present invention is particularly suitable in the manufacture of image display devices, touch screen devices and related electronic components.
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/54 - Contact plating, i.e. electroless electrochemical plating
A desmear module for a horizontal galvanic or wet-chemical process line for metal, in particular copper, deposition on a substrate to be treated for a removal of precipitates comprising a desmear container connectable to a desmear unit, a pump and at least a first liquid connection element for connecting said pump with the desmear unit, wherein said pump is in conjunction with said desmear unit by said at least first liquid connection element; and wherein a treatment liquid level is provided inside the desmear module, which is above an intake area of the pump; wherein the desmear module further comprises at least a first liquid area, at least an adjacent second liquid area comprising the intake area of the pump, and at least a first separating element arranged between said at least first liquid area and said at least second liquid area.
The present invention relates to a composition of an etching solution and a process for metallizing electrically nonconductive plastic surfaces of articles using the etching solution. The etching solution is based on a stabilized acidic permanganate solution. After the treatment with the etching solution, the articles can be metallized.
C25D 5/54 - Electroplating of non-metallic surfaces
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
72.
Method of forming a metal layer and method of manufacturing a substrate having such metal layer
In a substrate like a printed circuit board comprising an insulator and a copper layer laminated on part of the insulator, said insulator outer surface and said copper layer outer surface are simultaneously subjected to a process (1) comprising treatment with an alkali metal hydroxide solution, a process (2) comprising treatment with an alkaline aqueous solution containing an aliphatic amine, a process (3) comprising treatment with an alkaline aqueous solution having a permanganate concentration of 0.3 to 3.5 wt % and a pH of 8 to 11, a process (4) comprising treatment with an acidic microemulsion aqueous solution containing a thiophene compound and an alkali metal salt of polystyrenesulphonic acid, and a process (5) comprising copper electroplating, which are implemented sequentially.
An aqueous plating bath for the electroless deposition of iron boron alloy coatings, characterized in that it comprises at least one iron ion source, at least one boron based reducing agent, at least one complexing agent, at least one pH buffer and at least one base wherein its pH value is 11 or higher and the molar ratio of the boron based reducing agents in relation to the iron ions in the aqueous plating bath is at least 6:1. Also, a process for the use of said aqueous plating bath is disclosed. The aqueous plating bath according to the invention shows good stability and plating rate and yields glossy and homogeneous iron boron alloy coatings on various substrates. It is an advantage of the plating bath that it does not require any sacrificial anodes.
C23C 18/50 - Coating with alloys with alloys based on iron, cobalt or nickel
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
74.
Plating bath composition and method for electroless plating of palladium
The present invention relates to a plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous acidic plating bath according to the present invention comprises a source for palladium ions, a reducing agent, a nitrogenated complexing agent for palladium ions and a water-soluble stabilizing agent selected from the group consisting of aromatic compounds comprising at least two residues wherein at least one residue is a hydrophilic residue and at least one residue has a negative mesomeric effect. The plating bath has an increased stability against undesired decomposition while maintaining a sufficient plating rate.
C23C 18/44 - Coating with noble metals using reducing agents
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/54 - Contact plating, i.e. electroless electrochemical plating
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
The present invention relates to methods of treating metal surfaces to enhance adhesion or binding to substrates, and devices formed thereby. In some embodiments of the present invention, methods of achieving improved bonding strength without roughening the topography of a metal surface are provided. The metal surface obtained by this method provides strong bonding to resin layers. The bonding interface between the treated metal and the resin layer exhibits resistance to heat, moisture, and chemicals involved in post-lamination process steps, and therefore can suitably be used in the production of PCB's. Methods according to some embodiments of the present invention are especially useful in the fabrication of high density multilayer PCB's, in particular for PCB's having circuits with line/spacing of equal to and less than 10 microns. Methods according to other embodiments of the present invention are particularly useful in the coating of metal surfaces in a wide variety of applications.
C09J 5/02 - Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
C08J 5/12 - Bonding of a preformed macromolecular material to the same or other solid material such as metal, glass, leather, e.g. using adhesives
C23C 8/40 - Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using liquids, e.g. salt baths, liquid suspensions
The present invention discloses a process for electroless plating of a metal or metal alloy onto copper features of an electronic device such as a printed circuit board which suppresses undesired skip plating and extraneous plating. The process comprises the steps i) providing such a substrate, ii) activating of the copper features with noble metal ions; iii) removing excessive noble metal ions or precipitates formed thereof with an aqueous pre-treatment composition comprising an acid, a source for halide ions and an additive selected from the group consisting of thiourea, thiourea derivatives and polymers comprising thiourea groups, and iv) electroless plating of a metal or metal alloy layer.
B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
C23C 18/32 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals
C23C 18/18 - Pretreatment of the material to be coated
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/50 - Coating with alloys with alloys based on iron, cobalt or nickel
C23F 1/30 - Acidic compositions for etching other metallic material
C23F 1/44 - Compositions for etching metallic material from a metallic material substrate of different composition
H05K 3/26 - Cleaning or polishing of the conductive pattern
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
The present invention relates to a galvanic process for filling through-holes with metals. The process is particularly suitable for filling through-holes of printed circuit boards with copper.
The method for copper electroplating according to the present invention comprises an aqueous acidic copper plating bath containing a leveler additive which forms copper trenches having a cross-sectional round shape under direct current plating conditions, and at least one reverse current pulse cycle consisting of one forward current pulse and one reverse current pulse wherein the fraction of the reverse charge to the forward charge applied to the substrate in said at least one current pulse cycle ranges between 0.1 to 5%. The method is particularly suitable for simultaneously filling blind micro vias and plating trenches with a rectangular cross-sectional shape.
A method is provided for metallisation of non-conductive substrates providing a high adhesion of the deposited metal to the substrate material and thereby forming a durable bond. The method applies a metal oxide adhesion promoter which is activated and then metal plated. The method provides high adhesion of the non-conductive substrate to the plated metal layer.
B05D 3/02 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
B05D 7/00 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C25D 5/50 - After-treatment of electroplated surfaces by heat-treatment
C25D 5/54 - Electroplating of non-metallic surfaces
C23C 18/12 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
C23C 18/18 - Pretreatment of the material to be coated
C23C 18/34 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents
C23C 18/40 - Coating with copper using reducing agents
C03C 17/36 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
C23C 18/14 - Decomposition by irradiation, e.g. photolysis, particle radiation
80.
Device for vertical galvanic metal deposition on a substrate
A method and device for vertical galvanic metal deposition on a substrate, the device including at least first and second device elements arranged vertically parallel to each other, the first device element including at least a first anode element having a plurality of through-going conduits and at least a first carrier element having a plurality of through-going conduits, the at least first anode element and the at least first carrier element firmly connected to each other; and the second device element including at least a first substrate holder adapted to receive at least one substrate to be treated, the at least one substrate holder at least partially surrounding the at least one substrate along its outer frame after receiving it; the distance between the first anode element and the at least first substrate holder ranging from 2 to 15 mm.
The present invention relates to a method for providing a copper seed layer on top of a barrier layer wherein said seed layer is deposited onto said barrier layer from an aqueous electroless copper plating bath comprising a water-soluble source for Cu(II) ions, a reducing agent for Cu(II) ions, at least one complexing agent for Cu(II) ions and at least one source for hydroxide ions selected from the group consisting of RbOH, CsOH and mixtures thereof. The resulting copper seed layer has a homogeneous thickness distribution and a smooth outer surface which are both desired properties.
B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
C23C 18/40 - Coating with copper using reducing agents
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 5/00 - Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
The present invention concerns a method for cathodic corrosion protection of a substrate having a chromium surface and at least one intermediate layer between the substrate and the chromium surface, selected from the group comprising nickel, nickel alloys, copper and copper alloys and wherein said chromium surface is contacted with an aqueous solution comprising at least one compound containing phosphorous while passing an electrical current through said substrate, at least one anode and the aqueous solution wherein said substrate serves as the cathode.
C23F 13/02 - Inhibiting corrosion of metals by anodic or cathodic protection cathodic; Selection of conditions, parameters or procedures for cathodic protection, e.g. of electrical conditions
C25D 5/48 - After-treatment of electroplated surfaces
C25D 9/08 - Electrolytic coating other than with metals with inorganic materials by cathodic processes
C25D 9/04 - Electrolytic coating other than with metals with inorganic materials
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
83.
Method and regeneration apparatus for regenerating a plating composition
A method and apparatus for regenerating a plating composition which is suitable for depositing at least one first metal on a substrate where the plating rate in the plating composition is very low, where the concentration of the at least one first metal in the plating composition cannot be easily set at a constant level, and where plating-out of the at least one first metal from the plating composition takes place. The method and apparatus for regenerating a plating composition is suitable for depositing at least one first metal on a substrate at a sufficiently high plating rate, while offering the opportunity to easily adjust the concentration of the at least one first metal in the plating composition at a constant level and to provide the plating composition with sufficient stability against decomposition thereof in order to safeguard the regeneration cell from plated-out first metal.
The invention relates to methods and plating baths for electrodepositing a dark chromium layer on a workpiece. The trivalent chromium electroplating baths comprise sulphur compounds and the methods for electrodepositing a dark chromium layer employ these trivalent chromium electroplating baths. The dark chromium deposits and workpieces carrying dark chromium deposits are suited for application for decorative purposes.
The present invention is related to a galvanic nickel or nickel alloy electroplating bath for depositing a semi-bright nickel or nickel alloy coating characterized in that the electroplating bath comprises at least one compound having the general formula (I)
n=1-3.
The invention relates to an electroless aqueous copper plating solution, comprising: a source of copper ions, a reducing agent or a source of a reducing agent, and a combination of complexing agents comprising i) polyamino disuccinic acid, polyamino monosuccinic acid, or a combination thereof, and ii) one or more of ethylenediamine tetraacetic acid, N′-(2-Hydroxyethyl)-ethylenediamine-N,N,N′-triacetic acid, and N,N,N′,N′-Tetrakis (2-hydroxypropyl)ethylenediamine, as well as methods for electroless copper plating utilizing the solution and uses of the solution for the plating of various substrates.
C23C 18/40 - Coating with copper using reducing agents
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
88.
Method for activating a copper surface for electroless plating
The present invention relates to method for activating a copper or copper alloy surface for depositing a metal or metal alloy layer by electroless (autocatalytic) plating thereon wherein the formation of undesired voids is suppressed. The copper or copper alloy surface is contacted with palladium ions, at least one phosphonate compound and halide ions followed by electroless (autocatalytic) deposition of a metal such as palladium or a metal alloy such as a Ni—P alloy.
B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
C23C 18/18 - Pretreatment of the material to be coated
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H05K 1/09 - Use of materials for the metallic pattern
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
C23C 18/36 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents using hypophosphites
C23C 18/44 - Coating with noble metals using reducing agents
The present invention relates to a process for corrosion protection of an iron-containing substrate wherein a first zinc-nickel alloy layer, a second zinc-nickel alloy layer and a black passivate layer are deposited onto the substrate. The nickel concentration in the second zinc-nickel alloy layer is higher than the nickel concentration in the first zinc-nickel alloy layer. The substrate surface obtained is homogenously black with an appealing decorative appearance and both resistance against white rust and red rust are improved.
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C25D 5/10 - Electroplating with more than one layer of the same or of different metals
C25D 3/56 - Electroplating; Baths therefor from solutions of alloys
C25D 5/48 - After-treatment of electroplated surfaces
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
90.
Device for vertical galvanic metal, preferably copper, deposition on a substrate and a container suitable for receiving such a device
The present invention is related to a device for vertical galvanic metal, preferably copper, deposition on a substrate, a container suitable for receiving such a device and a substrate holder, which is suitable for receiving a substrate to be treated, and the use of such a device inside of such a container for galvanic metal, in particular copper, deposition on a substrate.
The present invention concerns a plating method for manufacturing of electrical contacts on a solar module wherein the wiring between silicon solar cells in a solar module is deposited by electroplating onto a conductive seed. The wiring between individual silicon solar cells comprises wiring reinforcement pillars which improve the reliability of said wiring.
3+ ions, at least one acid, at least one triazole or tetrazole derivative, and at least one etching additive selected from N-alkylated iminodipropionic acid, salts thereof, modified polyglycol ethers and quaternary ureylene polymers. The aqueous composition is particularly useful for making of fine structures in the manufacture of printed circuit boards, IC substrates and the like.
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
The present invention relates to aqueous acidic plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises copper ions, at least one acid and an ureylene polymer comprising amino residues on both termini and which is free of organically bound halogen. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.
The present invention relates to a method for manufacture of wire bondable and solderable surfaces on noble metal electrodes. The noble metal electrodes are activated by depositing a seed layer of palladium or a palladium alloy layer by electroless plating at 60 to 90° C. Next, an intermediate layer is deposited onto the seed layer followed by deposition of the wire bondable and/or solderable surface finish layer(s) onto the intermediate layer. This method is particularly suitable in the production of optoelectronic devices such as light emitting diodes (LEDs).
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
The present invention relates to a method for forming a copper pillar on a semiconducting substrate, the copper pillar having an underbump metallization area comprising a metal less noble than copper and optionally a solder bump on the top portion, and having a layer of a second metal selected from tin, tin alloys, silver, and silver alloys deposited onto the side walls of said copper pillar. A layer of a first metal which is more noble than copper is deposited onto the entire outer surface of the copper pillar prior to deposition of the second metal layer. The layer of a second metal then has at least a reduced number of undesired pin-holes and serves as a protection layer for the underlying copper pillar.
The device 1 according to the invention is suggested for gentle treatment of a flat material B to be treated with a treatment liquid F. The device 1 has the following components: at least one treatment chamber 20, in which the treatment liquid F can be accumulated up to a bath level M, at least one supply device 7 for the supply of the treatment liquid F into the at least one treatment chamber 20, at least one transport device 30, with which the material B to be treated can be transported in the horizontal position in a transport plane E below the bath level M through the at least one treatment chamber 20, at least one reception area 4 for the treatment liquid F, and at least one discharge device 40 with, respectively, at least one discharge opening 41 for the treatment liquid F for conveying it from the at least one treatment chamber 20 with a respective discharge rate into the at least one reception area 4. The at least one discharge device 40 respectively has at least one regulating system 43, with which the discharge rate of the treatment liquid F is adjustable through the at least one discharge opening 41.
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C25D 5/08 - Electroplating with moving electrolyte, e.g. jet electroplating
C25D 21/10 - Agitating of electrolytes; Moving of racks
A holding device for a treatment of a product (5), which holding device comprises a first holding part (41) and a second holding part (42). The first holding part (41) comprises at least one first electrical contact element (13) for establishing a contact with a first side (6) of the product (5). The second holding part (42) comprises at least one second electrical contact element (14) for establishing a contact with a second side (7) of the product (5), which second side that lies opposite the first side (6). The first holding part (41) and the second holding part (42) are arranged in such a way that they can be fastened to one another in a detachable manner for the purpose of holding the product (5). A product seal (15, 16) and a housing seal (17) provide a sealing arrangement to prevent the penetration of fluid into the at least one first electrical contact element (13) and the at least one second electrical contact element (14) in a treatment state.
The present invention concerns an electroless nickel plating bath suitable for application in plating on plastic processes. The plating bath is free of hazardous substances such as lead ions and ammonia and allows deposition of nickel phosphorous alloys on plastic substrates at plating temperatures not higher than 55° C. Furthermore, the deposition of copper from an immersion type copper plating bath onto the nickel phosphorous coatings require no activation step which results in less process steps and less waste water production.
C23C 18/36 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents using hypophosphites
C23C 18/54 - Contact plating, i.e. electroless electrochemical plating
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/24 - Roughening, e.g. by etching using acid aqueous solutions
A method and apparatus for regenerating a plating composition which is suitable for depositing at least one first metal on a substrate where the plating rate in the plating composition is very low, where the concentration of the at least one first metal in the plating composition cannot be easily set at a constant level, and where plating-out of the at least one first metal from the plating composition takes place. The method and apparatus for regenerating a plating composition is suitable for depositing at least one first metal on a substrate at a sufficiently high plating rate, while offering the opportunity to easily adjust the concentration of the at least one first metal in the plating composition at a constant level and to provide the plating composition with sufficient stability against decomposition thereof in order to safeguard the regeneration cell from plated-out first metal.
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/52 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups
100.
Plating bath for electroless deposition of nickel layers
The present invention relates to aqueous plating bath compositions for deposition of nickel and nickel alloys utilizing novel stabilizing agents possessing a carbon-carbon triple bond and a functional group to enhance the bath performance.
C23C 18/50 - Coating with alloys with alloys based on iron, cobalt or nickel
C23C 18/34 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents
C23C 18/36 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents using hypophosphites
B05D 1/18 - Processes for applying liquids or other fluent materials performed by dipping
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
patents
