PROCESSING APPARATUS, SYSTEM AND METHOD FOR CONVEYING THERETHROUGH PARTS TO BE TREATED AND DEVICE FOR INTERCONNECTING A FIRST LINE AND A SECOND LINE OF THE SYSTEM
A device for interconnecting a first line (1a) and a second line (1b) of an overhead conveying system for conveying parts to be treated through a processing apparatus by means of at least one product carrier (7) comprising a transporter (19) and a part depending downwards from the transporter (19), in use, the transporter (19) comprising at least one runner (36,37) supported on at least one track (10a,b) comprises a main support structure (47). The device further comprises a movable support structure (48), at least indirectly supported by and movable relative to the main support structure (47) between at least a first position and a second position. The movable support structure (48) comprises at least one track segment (50a,b) for supporting at least one runner (36,37) of a transporter (19) in a support direction (z). Each track segment (50a,b) is alignable with a respective track (10a,b) of the first line (1a) in the first position and with a respective track (10a,b) of the second line (1b) in the second position such that an end of the track segment (50a,b) adjoins an end of the aligned track (10a,b) to allow a runner (36,37) to cross over between the aligned track (10a,b) and track segment (50a,b). The movement between the first position and the second position comprises a rotation about an axis (54) parallel to the support direction (z) and a translation with at least a component in axial direction. The at least one track segments(50a,b) comprise at least two track segments (50a,b), spaced apart in lateral direction. The movable support structure (48) defines a space for receiving at least part of a product carrier (7). The space is open at a top between the spaced-apart track segments (50a,b) and at opposite ends in longitudinal direction.
B61J 1/08 - Turntables; Integral stops for connecting inclined tracks or tracks of different height
B65G 49/04 - Conveying systems characterised by their application for specified purposes not otherwise provided for for conveying workpieces through baths of liquid the workpieces being immersed and withdrawn by movement in a vertical direction
The invention relates to aqueous acidic plating baths for electrodeposition of copper and copper alloys in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises copper ions, at least one acid and an ureylene polymer. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.
An electroless nickel or cobalt plating solution, comprising - nickel ions or cobalt ions, - Ti3+ ions as reducing agent for reducing said nickel ions and cobalt ions, - at least one accelerator selected from the group consisting of sulfites, dithionites, thiosulfates, tetrathionates, polythionates, disulfites, sulfides, disulfide, polysulfide, elemental sulfur and mixtures thereof; and - one or more than one complexing agent, wherein the pH value of the plating solution is from 5 to 10.5.
The present invention is directed to an aqueous basic etching composition for the treatment of surfaces of metal substrates, the composition comprising: (a) functionalized urea, biuret and guanidine derivatives and/or salts thereof selected from the group comprising compounds having formulae (I) and (II) and/or salts thereof, wherein X and Y are independently selected from the group comprising oxygen, NRR' and NR5, wherein R, R' and R5are independently selected from the group comprising R114144 alkyl optionally comprise at least one substituent selected as OR6, wherein R614 4 alkyl, wherein X and Y can be identical or different; R1and R2are independently selected from the group comprising hydrogen, alkyl compounds, amines, and nitrogen-comprising heteroaromatic compounds, wherein R1and R2can be identical or different, with the proviso that R1cannot be hydrogen, and with the proviso that in compounds having formula (I) R1 cannot be hydrogen or alkyl compound if X is oxygen; m is an integer from 1 to 4, preferably 3; and n is an integer from 0 to 8, preferably 2 to 4; wherein m and n can be identical or different; (b) an oxidizing agent for oxidizing the metals of the metal surface to be treated; and wherein the aqueous basic etching composition comprises a pH from 7.1 to 14.
C23C 22/34 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 containing fluorides or complex fluorides
C23C 22/40 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 containing molybdates, tungstates or vanadates
C23C 22/46 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 containing oxalates
C23F 1/34 - Alkaline compositions for etching copper or alloys thereof
C23F 1/40 - Alkaline compositions for etching other metallic material
A device for transporting a plurality of parts to be treated through an apparatus for wet-chemical treatment comprises a transporter (16), comprising at least one runner (39a, b, 40a, b) for supporting the transporter (16) for movement along at least one track (5a, b) in a first direction (x). At least part of the transporter (16) is located next to the runners (39a, b, 40a, b), seen in a second direction (y) transverse to the first direction (x). This part extends from a level below the runners (39a, b, 40a, b) to a level above the runners (39a, b, 40a, b) in a third direction (z) transverse to the first and second directions (x,y). The device further comprises a container (14) having an interior for accommodating the plurality of parts and a frame (15), at least indirectly connecting the container (14) to the transporter (16) to allow the transporter (16) to carry the container (14) at a level below the runners (39a, b, 40a, b). The frame (15) comprises a respective frame part (23a, b) at at least one of opposite axial ends of the container (14) with respect to an axis (18) of the container (14). The container (14) is liquid-pervious between the axial ends to allow liquid to flood the interior when the container (14) is immersed in the liquid. The axis (18) of the container (14) extends in a direction (x) transverse to the second and third directions (y,z).
B65G 49/04 - Conveying systems characterised by their application for specified purposes not otherwise provided for for conveying workpieces through baths of liquid the workpieces being immersed and withdrawn by movement in a vertical direction
6.
ACIDIC AQUEOUS COMPOSITION FOR ELECTROLYTICALLY DEPOSITING A COPPER DEPOSIT
22 groups, halogen atoms, and sulfur atoms; a method of electrolytic copper plating using the acidic aqueous composition; and specific suppressors as defined above.
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C07D 233/60 - Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, attached to ring carbon atoms with hydrocarbon radicals, substituted by oxygen or sulfur atoms, attached to ring nitrogen atoms
The present inventions refers to a method for forming a black-passivation layer on a zinc-iron alloy of a substrate, a black-passivation composition for depositing a black-passivation layer on such, wherein the black-passivation composition comprises one or more than one blackening agent selected from the group consisting of formula (I) and formula (II) as described hereinafter, and a respective use of said blackening agents for blackening a zinc-iron alloy.
C23C 22/34 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 containing fluorides or complex fluorides
C23C 22/46 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 containing oxalates
C23C 22/73 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals characterised by the process
C23C 22/80 - Pretreatment of the material to be coated with solutions containing titanium or zirconium compounds
This invention is related to a process for purification of metallic objects comprising an oil-adsorbing step in the presence of a liquid and a layer silicate component.
An electrode for an apparatus (1) for electrolytically treating a workpiece (3), the apparatus (1) being of a type arranged to convey the workpiece (3) with a surface to be treated past and directed towards a surface of the electrode, is divided into segments (23a-e) at at least this surface of the electrode. The segments (23a-e) are arranged next to each other in a first direction (x). Adjacent segments (23a-e) are separated from each other along respective segment edges (24a-f) such as to allow adjacent segments (23a-e) to be maintained at different respective voltages. The segment edges (24a-f) extend at least partly in a second direction (y) from a common value (y0) of a co-ordinate in the second direction (y) to an edge (25, 26) of at least an electrically conducting part of the electrode surface, the second direction (y) being transverse to the first direction (x) and corresponding to a direction of movement of the workpiece, in use. The segment edges (24a-f) between at least one pair of adjacent segments (23a-e) extend along respective paths of which an angle to the electrode surface edge (25, 26) decreases from the common value (y0) of the co-ordinate to the electrode surface edge (25, 26).
The present invention refers to an electroplating composition for depositing a chromium coating on a substrate, the composition comprising: (i) trivalent chromium ions, (ii) at least one complexing agent for the trivalent chromium ions, and (iii) at least one additive selected from the group consisting of betaines, polymeric glycols, monomeric diols, and mixtures thereof.
The present invention is directed to a method for depositing a zinc-nickel alloy on a substrate, the method comprising the steps: (a) providing the substrate, (b) providing an aqueous zinc-nickel deposition bath as a catholyte in a deposition compartment, wherein - the deposition compartment comprises at least one anode with an anolyte, and - the anolyte is separated from the catholyte by at least one membrane, and the catholyte comprises (i) nickel ions, (ii) at least one complexing agent for nickel ions, and (iii) zinc ions, (c) contacting the substrate with the catholyte in the deposition compartment such that the zinc-nickel alloy is electrolytically deposited onto the substrate and thereby obtaining a zinc-nickel coated substrate, wherein after step (c) the nickel ions in the catholyte have a lower concentration than before step (c), (d) rinsing the zinc-nickel coated substrate in a rinsing compartment comprising water, such that a rinsed zinc-nickel coated substrate and rinse water is obtained, wherein the rinse water comprises a portion of the at least one complexing agent for nickel ions and a portion of the nickel ions, characterized in that (i) at least a portion of the rinse water and/or at least a portion of the catholyte is treated in a first treatment compartment such that water is separated from the at least one complexing agent for nickel ions and the nickel ions, (ii) at least a portion of the at least one complexing agent separated from water is returned into the catholyte, and (iii) a nickel ion source is added to the catholyte, with the proviso that the nickel ion source does not comprise said at least one complexing agent for nickel ions or any other complexing agent for nickel ions.
The present inventions refers to a passivation composition for depositing a chromium-comprising passivation layer on a zinc or zinc-nickel coated substrate, the composition comprising: (i) trivalent chromium ions, (ii) at least one complexing agent for the trivalent chromium ions, being different from the at least one corrosion-inhibiting agent, and (iii) at least one corrosion-inhibiting agent, which is (A) one or more than one substituted azole compound and/or salts thereof, together in a total concentration below 10 mg/L, based on the total volume of the passivation composition, and/or (B) one or more than one unsubstituted or substituted aliphatic organic acid with at least one mercapto-group and/or salts thereof, together in a total concentration in a range from 0.001 mg/L to 100 mg/L, based on the total volume of the passivation composition.
The present inventions refers to a method for reducing the concentration of iron ions in a trivalent chromium electroplating bath, the method comprising the following steps: (i) providing the trivalent chromium electroplating bath comprising (a) trivalent chromium ions, and (b) iron ions, (ii) subjecting at least a portion of the trivalent chromium electroplating bath to air agitation, to obtain at least an air-agitated portion of the trivalent chromium electroplating bath, (iii) contacting the air-agitated portion of the trivalent chromium electroplating bath with an ion exchange resin, to obtain a resin-treated portion of the trivalent chromium electroplating bath, and (iv) returning the resin-treated portion of the trivalent chromium electroplating bath to the trivalent chromium electroplating bath, with the proviso that - the trivalent chromium electroplating bath provided in step (i) was or is utilized for electrodepositing a chromium layer on at least one substrate applying a cathodic current density of 18 A/dm2 or more, - after step (iii), the iron ions in the resin-treated portion of the trivalent chromium electroplating bath have a lower concentration than in the air-agitated portion of the trivalent chromium electroplating bath, and - after step (iv), the iron ions in the trivalent chromium electroplating bath have a concentration below 50 mg/L, based on the total volume of the trivalent chromium electroplating bath.
The present invention relates to an electroless nickel alloy plating bath comprising nickel ions; further reducible metal ions selected from the group consisting of molybdenum ions, rhenium ions, tungsten ions, copper ions, oxo-ions thereof, and mixtures thereof; at least one reducing agent suitable to reduce the nickel ions and the further reducible metal ions to their respective metallic state; complexing agents CA1, CA2, CA3, and CA4, wherein CA1, CA2, CA3, and CA4 are all different from each other, wherein each of CA1 and CA2 is independently selected from the group consisting of compounds having at least two carboxylic acid moieties, the respective salts thereof as well as mixtures of the aforementioned; wherein CA3 is selected from the group consisting of aliphatic compounds having exactly one carboxylic acid moiety, the respective salts thereof as well as mixtures of the aforementioned; and wherein CA4 is selected from the group consisting of aromatic compounds having at least one carboxylic acid moiety, the respective salts thereof as well as mixtures of the aforementioned.
yyxyxyzz) perpendicular to the central plane (4). Channels (23a, b, 24a, b) are provided through the walls (13a, b), each channel (23a, b, 24a, b) arranged to conduct liquid to a respective one of the apertures (27).
ORGANIC-SOLVENT BASED COATING COMPOSITION FOR COATING A SURFACE OF A METAL SUBSTRATE FOR INCREASING THE COEFFICIENT OF FRICTION OF THE SURFACE OF THE METAL SUBSTRATE
The present disclosure is directed to an organic-solvent based coating composition for coating a surface of a metal substrate for increasing the coefficient of friction of the surface of the metal substrate, the composition comprising (i) at least one organic solvent; (ii) at least one particulate metal provided as metal flakes and having a diameter ranging from 1 pm to 100 µm; (iii) at least one metal carbide at a total concentration ranging from 0.1 wt.-% to 5 wt.-% based on the total weight of the coating composition; and (iv) at least one binding agent.
The present invention refers to a method of preparing a high density interconnect printed circuit board (HDI PCB) or IC substrates including through-holes and/or grate structures filled with copper, which comprises the steps of: a) providing a multi-layer substrate comprising (i) an insulating core layer having a peripheral surface, or (i') a stack assembly comprising an insulating core layer embedded between two electrically conductive interlayers and at least one outer insulating layer attached on the electrically conductive interlayers and having a peripheral surface, (ii) an optional cover layer covering the peripheral surface, and (iii) at least one through-hole extending through all layers of the multilayer substrate; and a grate structure having multiple slots extending through the optional cover laver and partially extending in the insulating core layer or extending through at least the optional cover layer and at least one of the outer insulating layers; b) forming a non-copper conductive layer or a copper layer on the cover layer and on an inner surface of the through-hole, respectively on an inner surface of the grate structure; c) forming a patterned masking film on the non-copper conductive layer or on the copper layer; d) electrodepositing a copper inner-seal inside the through-hole sufficient to form two blind-microvias, respectively electrodepositing a copper inlay on the non-copper conductive layer or on the copper layer of the inner surface of the grate structure and on the remaining peripheral surface of the non-copper conductive layer or of the copper layer, in one step; e) removing the masking film; and f) electrodepositing a copper filling in the blind-microvias, respectively the copper inlay, and on the first copper layer in one step.
H05K 3/10 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
The present invention refers to a method of preparing a high density interconnect printed circuit board (HDI PCB) including microvias filled with copper. The method comprises the steps of: a1) providing a multi-layer substrate comprising (i) a stack assembly of an electrically conductive interlayer embedded between two insulating layers having a peripheral surface, (ii) a cover layer covering the peripheral surface of the multi-layer substrate, and (iii) a microvia extending from the peripheral surface of the multi-layer substrate through the cover layer and ending on the conductive interlayer; b1) depositing a conductive layer on the cover layer and on an inner surface of the microvia; or a2) providing a multi-layer substrate comprising (i) a stack assembly of an electrically conductive interlayer embedded between two insulating layers having a peripheral surface, (ii) a microvia extending from the peripheral surface of the multi-layer substrate and ending on the conductive interlayer; b2) depositing a conductive layer on the peripheral surface of the multi-layer substrate and on an inner surface of the microvia; and c) electrodepositing a copper filling in the microvia and a first copper layer on the conductive layer wherein a thickness of the first copper layer is from 0.1 to 3 µm and wherein the copper filling and the first copper layer form together a planar surface.
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
H05K 3/10 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
19.
DEVICE AND METHOD FOR MOVING AN OBJECT INTO A PROCESSING STATION, CONVEYING SYSTEM AND PROCESSING APPARATUS
A device for moving an object comprising at least a substrate (2) through an open side of a processing station (la,b) of a processing apparatus comprises at least one support (26;26'), placeable at the processing station (la,b). The device comprises at least one carrier (27a,b;27'a,b), each guided for movement relative to the support(s) (26;26') along a respective path predominantly directed in parallel to a reference axis (z) in a reference co-ordinate system. The device comprises at least one device (29a,b,30a,b,31a,b;37a,b) for controlling the movement of at least one of the carriers (27a,b;27'a,b) and driving the movement in at least one of opposite directions along the path. The device comprises a component (21;21') for holding the object and a suspension mechanism with which the holding component (21;21') is connected to the at least one carrier (27a,b;27'a,b). The suspension mechanism is arranged to guide movement of the holding component (21;21') relative to the at least one carrier (27a,b;27'a,b) along a holding component (21;21') path. The device (29a,b,30a,b,31a,b;37a,b) is arranged to drive the movement of the holding component (21;21') in at least one direction along the holding component path. The holding component path is predominantly directed in parallel to the reference axis (z).
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
20.
TIN PLATING BATH AND A METHOD FOR DEPOSITING TIN OR TIN ALLOY ONTO A SURFACE OF A SUBSTRATE
The present invention concerns a tin plating bath comprising tin ions; titanium ions as reducing agent suitable to reduce tin ions to metallic tin; and at least one compound selected from the group consisting sulfites, dithionites, thiosulfates, tetrathionates, polythionates, disulfites, sulfides, disulfide, polysulfide, elemental sulfur or mixtures thereof. The present invention further discloses a method of depositing tin or a tin alloy onto a surface of a substrate. The tin plating bath is particularly suitable to be used in the electronics and semiconductor industry.
C23C 18/52 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
21.
GALVANIC NICKEL OR NICKEL ALLOY ELECTROPLATING BATH FOR DEPOSITING A SEMI-BRIGHT NICKEL OR SEMI-BRIGHT NICKEL ALLOY COATING
11 183118118 234563451181183456383822222333333222222222222222222– OH, and wherein the electroplating bath comprises chloral hydrate, wherein the chloral hydrate has a concentration of less than 0.07 g/l.
The present invention relates to a method for activating a surface of a non-conductive or carbon-fibres containing substrate for metallization, the method comprising the steps (a) providing said substrate, (b) providing an aqueous, palladium-free activation composition comprising (i) a first species of dissolved transition metal ions and additionally metal particles thereof, (ii) one or more than one complexing agent, (iii) permanently or temporarily one or more than one reducing agent, (iv) optionally one or more than one second species of dissolved metal ions being different from the first species, wherein - at least of the first species, the dissolved transition metal ions and the metal particles thereof are present in a reversible equilibrium, with the proviso that - the metal particles are formed from the dissolved transition metal ions through a continuous or semi-continuous reduction through the one or more than one reducing agent, - the dissolved transition metal ions are formed from the metal particles through continuous or semi-continuous oxidation of said particles, and - the dissolved transition metal ions and the metal particles thereof, respectively, are repeatedly involved in said reduction and said oxidation such that no precipitating agglomerates of said metal particles a r e formed, (c) contacting the substrate with said activation composition such that a transition metal or a transition metal alloy is deposited on the surface of said substrate and an activated surface for metallization is obtained.
The present invention relates to a method for increasing adhesion strength between a surface of a metal, a metal alloy or a metal oxide and a surface of an organic material comprising as a main step contacting of at least one section of said metal, metal alloy or metal oxide with a specific azole silane compound, a specific azole silane oligomer, or a mixture comprising said compound and/or said oligomer. Furthermore, the present invention relates to a use of said specific azole silane compound, said specific azole silane oligomer, or said mixture in a method for increasing adhesion strength between a surface of a metal, a metal alloy or a metal oxide and a surface of an organic material.
The present invention is related to an aqueous post treatment composition for providing a post treatment layer on at least a part of a passivation layer, which is covering at least a part of a zinc layer being on at least a part of an iron containing substrate, characterized in that the aqueous post treatment composition comprises at least one chromium (III) ion source and at least one compound containing the chemical element silicon; wherein a molar ratio of silicon versus chromium is given in said composition, with the proviso that said molar ratio is ranging from 2600:1 to 1 : 1 for the zinc layer obtained by an electrolytic acid zinc deposition process; or that said molar ratio is ranging from 5200:1 to 1:1 for the zinc layer obtained by an electrolytic alkaline zinc deposition process.
A method for obtaining information about a layer of an organic solderability preservative, OSP, on a printed circuit board, PCB, the method comprising • Providing a PCB (16) having a copper layer (18), wherein a solder resist (19) is placed on the copper layer (18), and the solder resist (19) has openings (21) wherein in the openings (21) a copper surface of the copper layer (18) is covered by a layer of an OSP, • Providing a fluorescence measuring system (10), comprising a radiation source (11), a detection unit (12), and a movement device (24), the method comprising: • a) Obtaining (S2) information about the location of the openings (21) on the PCB (16), • b) Selecting (S3) at least one of the openings (21), • c) Placing (S4) the radiation source (11) at such position that the radiation beam (22) irradiates into the at least one selected opening (21) on the layer of the OSP (20), • d) Detecting (S5) the fluorescent radiation (23) emitted from the OSP (20).
The present invention is related to a membrane anode system for electrolytic zinc-nickel alloy deposition, a method for electrolytic deposition of a zinc- nickel alloy layer on a substrate to be treated using a membrane anode system, and the use of a membrane anode system for acid or alkaline electrolytic deposition of a zinc-nickel alloy layer on a substrate to be treated by such a method.
A method of forming copper oxide on a copper surface, the method comprising the steps a) providing a substrate comprising the copper surface, b) optionally pre-cleaning the copper surface, c) contacting the copper surface with an alkaline aqueous oxidizing solution comprising one or more than one oxidizing compound selected from the group consisting of - an aromatic sulfonic acid compound, salts thereof, - an aromatic sulfonic acid ester compound, salts thereof, - an aromatic nitro compound, and salts thereof, such that said copper oxide is formed on the copper surface.
2mm Mm+(I) wherein n is integer from 2 to 4 and m is 1 or 2, R is independently H or OH with proviso that at least one R is OH, and wherein Mm+with m: 1 is hydrogen, ammonium or alkali metal; or Mm+ with m: 2 is earth alkali metal, - at least one polyoxyethylene sorbitan fatty acid ester, - at least one sulphonated fatty acid or a salt thereof.
A method for depositing a chromium or chromium alloy layer on at least one substrate, the method comprising the steps (a) providing an aqueous deposition bath with a pH in the range from 4.1 to 6.9, the bath comprising - trivalent chromium ions, - formate ions, and - optionally sulfate ions, (b) providing the at least one substrate and at least one anode, (c) immersing the at least one substrate in the aqueous deposition bath and applying an electrical current such that the chromium or chromium alloy layer is deposited on the substrate, the substrate being the cathode, wherein, if during or after step (c) the trivalent chromium ions have a concentration below a target concentration of trivalent chromium ions, then (d) adding dissolved trivalent chromium formate to the aqueous deposition bath such that trivalent chromium ions are present in a higher concentration than before step (d), with the proviso that - solid trivalent chromium formate is dissolved in a separated partial volume taken from the aqueous deposition bath to obtain said dissolved trivalent chromium formate for step (d).
An electroless nickel or cobalt plating solution, comprising - nickel ions or cobalt ions, - Ti3+ions as reducing agent for reducing said nickel ions and cobalt ions, - one or more than one complexing agent independently selected from the group consisting of - an organic phosphonic acid compound, its salts and esters, - an organic polyphosphoric acid compound, its salts and esters, and - an inorganic polyphosphoric acid compound, its salts and esters, wherein the molar ratio of the complexing agent to the Ti3+ ions is 1.5 : 1 or higher, and the plating solution does not comprise citric acid, salts thereof, and tin.
C23C 18/34 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
An end effector for clamping a slab formed substrate (2) having a rim section (5) that is arranged at least approximately and at least partially in a substrate main plane comprises at least a pressing device (10) providing at least a pressing area (11), and at least a support device (20) providing at least a support area (21). The end effector (1) is configured, in a clamped state of the substrate (2), to clamp the substrate (2) at a first surface (3) by a pressing area (11) of a pressing device (10) and at a second surface (4) that is, in regard to the first surface (3), arranged at the opposite side of the substrate (2) by a support area (21) of a support device (20). The end effector comprises a guide (15) for guiding the pressing device (10) relative to the support device (20).
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
An electroless nickel plating solution, comprising - a source of nickel ions, - a source of molybdenum ions, - a source of tungsten ions, - a source of hypophosphite ions - at least one complexing agent, - at least one organic sulphur containing compound in a concentration of 0.38 – 38.00 µmol/L, and - at least one amino acid in a concentration of 0.67 – 40.13 mmol/L, a method for electroless plating of a nickel alloy layer on a substrate, a nickel alloy layer and an article comprising the a nickel alloy layer.
The present invention relates to a method for electrolytically passivating a surface of silver, silver alloy, gold, or gold alloy, the method comprising the steps of (i) providing a substrate comprising said surface, (ii) providing an aqueous passivation solution comprising - trivalent chromium ions, and - one or more than one species of carboxylic acid residue anions, (iii) contacting the substrate with said passivation solution and passing an electrical current between the substrate as a cathode and an anode such that a passivation layer is electrolytically deposited onto said surface, wherein the trivalent chromium ions with respect to all species of carboxylic acid residue anions form a molar ratio in the range from 1:10 to 1:400.
The present invention relates to a specific azole silane compound, an oligomer thereof, a mixture comprising said compound and/or said oligomer, as well as a respective storage and working solution. Furthermore, the present invention relates to a synthesis method for said specific azole silane compound, and the use of said working solution as a sur- face treatment solution.
The present invention is related to an acidic zinc or zinc-nickel alloy electroplating bath for depositing a zinc or zinc-nickel alloy layer and a method for zinc or zinc-nickel alloy electroplating making use of such an electroplating bath. The bath comprises a triazole derivative and a polyethylene glycol derivative.
An electroless copper plating bath for depositing a copper or copper alloy layer on a surface of a substrate, comprising a) copper ions; b) at least one reducing agent suitable for reducing copper ions to metallic copper; c) at least one complexing agent for copper ions; characterized in that the electroless copper plating bath further comprises d) at least one compound according to formula (1) wherein Z1 and Z2 are independently selected from the group consisting of hydrogen; carboxylic acid group; carboxylate group; sulfonic acid group; sulfonate group; carboxamide group; nitrile group; nitro group; substituted or non-substituted trialkylammonium group; substituted or non-substituted 2-carboxyvinyl group; substituted or non-substituted 2-vinylcarboxylate group; substituted or non-substituted 2-(trialkylammonium)vinyl group; substituted or non-substituted hydroxamic acid group; and substituted or non-substituted oxime group; with the proviso that at least one of Z1and Z2is not hydrogen; and wherein R1, R2, R3and R4are defined as follows: i. R1, R2, R3and R4are hydrogen; or ii. R1with R2are forming together a substituted or non-substituted aromatic ring moiety, R3and R4are hydrogen; or iii. R3with R4are forming together a substituted or non-substituted aromatic ring moiety, R1and R2are hydrogen; or 25 iv. R1 with R2 as well as R3with R4 are forming together a substituted or non- substituted aromatic ring moiety, respectively. The invention further concerns a method for depositing at least a copper or copper alloy layer on a surface of a substrate, a layer system and a kit-of-parts for providing the inventive electroless copper plating bath.
The present invention refers to aqueous composition for depositing a tin silver alloy, the composition comprising (a) tin ions, (b) silver ions, (c) at least one first compound independently selected from the group consisting of unsubstituted bis(aminophenyl)disulfides, substituted bis(aminophenyl)disulfides, unsubstituted dipyridyldisulfides, and substituted dipyridyldisulfides, (d) at least one second compound of formula (II), and salts thereof, wherein independently X denotes a C1 to C10 alkyl moiety comprising one or more than one sulfhydryl group, R1denotes hydrogen, methyl, ethyl, linear C3 to C5 alkyl, branched C3 to C5 alkyl, unsubstituted phenyl, substituted phenyl, unsubstituted benzyl, or substituted benzyl, and R2 denotes methyl, ethyl, linear C3 to C5 alkyl, branched C3 to C5 alkyl, unsubstituted phenyl, substituted phenyl, unsubstituted benzyl, or substituted benzyl.
To achieve anti-fingerprint properties to decorative surfaces, a novel method for coating a metal substrate with an anti-fingerprint coating is provided. The method comprises the following method steps: (a) providing the metal substrate; (b) providing a silicone coating mixture containing: (i) at least one first silicone compound selected from the group consisting of mono- or oligo(aminoalkyl)-fluoroalkyl silicones; (ii) at least one second silicone compound selected from the group consisting of aminoalkyl silicones; (iii) at least one acidifier; and (iv) water; further (c) treating the metal substrate with the silicone coating mixture by bringing the metal substrate into contact with the silicone coating mixture; and (d) curing the treated metal substrate at a predetermined temperature.
C23C 18/12 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
C08G 77/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
39.
A METHOD FOR INCREASING ADHESION STRENGTH BETWEEN A SURFACE OF COPPER OR COPPER ALLOY AND AN ORGANIC LAYER
The present invention relates to a method for increasing adhesion strength between a surface of copper or copper alloy and an organic layer, the method comprising in this order the steps: (i) providing a non-conductive substrate comprising on at least one side said surface, said surface having a total surface area of copper or copper alloy, (ii) contacting said substrate comprising said surface with an acidic aqueous non- etching protector solution comprising (ii-a) one or more than one amino azole, (ii-b) one or more than one organic acid and/or salts thereof, (ii-c) one or more than one peroxide in a total amount of 0.4 wt-% or less, based on the total weight of the protector solution, and (ii-d) inorganic acids in a total amount of 0 to 0.01 wt-%, based on the total weight of the protector solution, wherein during step (ii) the total surface area of said surface is not increased upon contacting with the protector solution.
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
C23F 11/08 - Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
The present invention concerns a new nickel comprising layer array preferably having a reduced nickel ion release and a method for its manufacture. Further, it relates to the use of the layer array as decorative coating on a surface of the substrate. The use of the new layer array reduces the risk of nickel caused dermatitis due to lower release of nickel ions compared to conventional decorative coatings.
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
The present invention concerns an electroless gold plating bath comprising a) gold ions; b) sulfite ions; c) iodide ions; d) at least one phosphonate compound according to form ula ( 1 ) wherein each X is independently an alkanediyl group; R1, R2, R3and each R4 are independently alkanediyl groups;M is independently hydrogen, a metal atom or a cation form ing radical; each n is a rational number and selected in accordance with the valency of the respective M; and b is an integer ranging from 1 to 1 0.The invention further is directed to the use of the bath and a method for depositing a gold layer on a surface of a substrate. The bath is particularly suitable in the manufacture of printed circuit boards, I C substrates, semiconducting devices, interposers made of glass and t he like.
The present invention concerns a metal or metal alloy deposition composition, particularly a copper or copper alloy deposition composition, for electrolytic deposition of a metal or metal alloy layer, particularly for electrolytic deposition of a copper or copper alloy layer, comprising at least one type of metal ions to be deposited, preferably copper ions, and at least one imidazole based plating compound. The present invention further concerns a method for preparation of the plating compound, the plating compound itself and its use in a metal or metal alloy deposition composition. The inventive metal or metal alloy deposition composition can be preferably used for filling recessed structures, in particular those having higher diameter to depth aspect ratios.
C08G 65/26 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring from cyclic ethers and other compounds
C08G 65/333 - Polymers modified by chemical after-treatment with organic compounds containing nitrogen
C25D 3/12 - Electroplating; Baths therefor from solutions of nickel or cobalt
C25D 3/22 - Electroplating; Baths therefor from solutions of zinc
C25D 3/32 - Electroplating; Baths therefor from solutions of tin characterised by the organic bath constituents used
C25D 3/46 - Electroplating; Baths therefor from solutions of silver
C25D 3/48 - Electroplating; Baths therefor from solutions of gold
C25D 3/52 - Electroplating; Baths therefor from solutions of platinum group metals characterised by the organic bath constituents used
C25D 3/56 - Electroplating; Baths therefor from solutions of alloys
C25D 3/60 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of tin
C25D 3/62 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of gold
C25D 3/64 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of silver
43.
UREYLENE ADDITIVE, ITS USE AND A PREPARATION METHOD THEREFOR
The present invention relates to ureylene additives, a method for their preparation, a use of said ureylene additives favorably as additive in metal or metal alloy deposition composition, preferably in a copper or copper alloy deposition composition, more preferably as leveler and/or suppressor therein, metal or metal alloy deposition composition comprising said ureylene additive and the use of such composition, a method for electrolyticaliy depositing a metal or metal alloy layer, preferably a copper or copper alloy layer, onto at least one surface of a substrate and metal or metal alloy layers formed from above metal or metal alloy deposition composition. The ureylene additives allow for example in the case of copper plating for very levelled copper deposits without voids, in particular when filling recesses.
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C07C 275/14 - Derivatives of urea, i.e. compounds containing any of the groups the nitrogen atoms not being part of nitro or nitroso groups having nitrogen atoms of urea groups bound to acyclic carbon atoms of an acyclic and saturated carbon skeleton being further substituted by nitrogen atoms not being part of nitro or nitroso groups
C07C 211/13 - Amines containing three or more amino groups bound to the carbon skeleton
C07C 215/18 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being saturated and acyclic with hydroxy groups and at least two amino groups bound to the carbon skeleton
C07C 215/50 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups bound to carbon atoms of at least one six-membered aromatic ring and amino groups bound to acyclic carbon atoms or to carbon atoms of rings other than six-membered aromatic rings of the same carbon skeleton with amino groups linked to the six-membered aromatic ring, or to the condensed ring system containing that ring, by carbon chains not further substituted by hydroxy groups with amino groups and the six-membered aromatic ring, or the condensed ring system containing that ring, bound to the same carbon atom of the carbon chain
C07C 217/42 - Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having etherified hydroxy groups and at least two amino groups bound to the carbon skeleton
C08G 18/28 - Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
The present invention relates to a method for increasing corrosion resistance of a substrate comprising an outermost chromium alloy layer, the method comprising the steps of (i) providing a substrate comprising said outermost layer, the layer - having a color space defined by CIELAB with a lightness L* of 79 or more, - comprising oxygen and carbon, and - comprising iron in a total amount of 0 atom-% to 1 atom-%, based on the total number of atoms in said outermost layer, (ii) providing an aqueous, acidic passivation solution, the solution comprising - trivalent chromium ions, - phosphate ions, - one or more than one organic acid residue anion, (iii) contacting the substrate with the passivation solution and passing an electrical current between the substrate as a cathode and an anode in the passivation solution such that a passivation layer is deposited onto the outermost layer, wherein in step (i) the outermost chromium alloy layer is electrolytically deposited from an aqueous, acidic deposition composition, the composition comprising - trivalent chromium ions, - at least one organic acid comprising an isothiureido moiety and/or salts thereof, and - chloride ions in a total amount of 0 wt-% to 0.1 wt-%, based on the total weight of the deposition composition.
C25D 3/06 - Electroplating; Baths therefor from solutions of chromium from solutions of trivalent chromium
C25D 9/08 - Electrolytic coating other than with metals with inorganic materials by cathodic processes
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
45.
A METHOD AND TREATMENT COMPOSITION FOR SELECTIVE REMOVAL OF PALLADIUM
The present invention relates to a method for selective removal of palladium from a surface of a substrate having at least one structured surface with conductive features thereon made of one or more metal or metal alloys which are not palladium and at least one outer layer of palladium layer or parts thereof comprising the following method steps to be carried out in the given order (1) providing said substrate; and i. (2) treating said substrate with a treatment composition comprising at least one solvent; at least one hydroxycarboxylic acid or a salt thereof; and at least one sulfur compound selected from compounds represented by formula (I) compounds represented by formula (II) and mixtures of the aforementioned wherein the concentration of the at least one sulfur compound is at least 0.06 mol/L. The invention further concerns a treatment composition for selective removal of palladium from a surface of a substrate and its use.
C25D 5/02 - Electroplating of selected surface areas
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
C23F 1/44 - Compositions for etching metallic material from a metallic material substrate of different composition
C23F 1/30 - Acidic compositions for etching other metallic material
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
H05K 3/26 - Cleaning or polishing of the conductive pattern
H05K 3/10 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
C23C 18/18 - Pretreatment of the material to be coated
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 5/48 - After-treatment of electroplated surfaces
C23C 18/20 - Pretreatment of the material to be coated of organic surfaces, e.g. resins
C23C 18/40 - Coating with copper using reducing agents
46.
PLATING COMPOSITIONS FOR ELECTROLYTIC COPPER DEPOSITION, ITS USE AND A METHOD FOR ELECTROLYTICALLY DEPOSITING A COPPER OR COPPER ALLOY LAYER ONTO AT LEAST ONE SURFACE OF A SUBSTRATE
The present invention relates to a plating composition for electrolytic copper deposition, comprising copper ions, halide ions and at least one acid, at least one benzothiazole compound, at least one phenanzine dye and at least one ethanediamine derivative. The present invention further concerns the use of above plating composition and a method for electrolytically depositing a copper or cop- per alloy layer onto at least one surface of a substrate.
The present invention is related to a method for electrolytically depositing a zinc-nickel alloy layer on a substrate, wherein the method comprises an interrupting of the execution of the electrolytical deposition of a zinc-nickel alloy layer on the surface of a substrate by terminating applying the current from the external current source to each of the soluble zinc anode(s) and to each of the soluble nickel anode(s); and wherein afterwards at least one soluble zinc anode, which is remaining in the electrolysis reaction container, is electrically connected by an electrical connection element to form an electrical connection to at least one soluble nickel anode, which is remaining in the electrolysis reaction container, for at least a part of the defined period of time in which no current from the external current source is applied to each of the soluble zinc anode(s) and to each of the soluble nickel anode(s).
1222n33 - group, wherein n is an integer in the range of 1-6, and wherein one or more of the hydrogens in the group may be replaced by a substituent, preferably hydroxide; and a method for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy with said aqueous bath.
The present invention refers to an aqueous composition for depositing a cobalt deposit, the composition comprising (a) cobalt (II) ions, (b) at least one first compound comprising an acetylenic moiety, (c) at least one polymer comprising a plurality of carboxamide moieties each with a secondary or tertiary amine nitrogen, and (d) optionally a buffering agent, and a method for electrolytically depositing a cobalt deposit onto a substrate utilizing the composition above.
The present invention refers to an aqueous composition for depositing a cobalt deposit, the composition comprising (a) a total amount of cobalt (II) ions, (b) at least one first compound of formula (I), wherein independently R1denotes H, -NR3R4, -OR5, or -CR6R6'R7, R2denotes H, C1 to C4 alkyl, halogen, or OH, n is 1, 2, or 3 wherein independently R3denotes H, C1 to C4 alkyl, or an alkylene moiety connected to the nitrogen atom in R1via R4, R4denotes H, C1 to C4 alkyl, or an alkylene moiety connected to the nitrogen atom in R1via R3, R5denotes H or a pair of electrons, or C1 to C4 alkyl, R6denotes H, C1 to C4 alkyl, or an alkylene moiety connected to the carbon atom in R1via R7, R6'denotes H or C1 to C4 alkyl, R7denotes H, C1 to C4 alkyl, or an alkylene moiety connected to the carbon atom in R1via R6, with the proviso that the total amount of said cobalt (II) ions in the composition represents 51 wt.-% to 100 wt.-% of all transition metal cations in the composition, based on the total weight of all transition metal cations in the composition.
The present invention is related to a nickel electroplating bath for depositing a decorative nickel coating on a substrate to be treated characterized in that the electroplating bath comprises at least a nickel ion source, at least one amino acid and/or at least one carboxylic acid, which is not an amino acid; wherein the total concentration of the amino acid(s) is ranging from 1 to 10 g/l, wherein the total concentration of carboxylic acid(s), which is/are not an amino acid, is ranging from 10 to 40 g/l; wherein the electroplating bath is free of boric acid; wherein the total concentration of the nickel ions is ranging from 55 to 80 g/l; and wherein the nickel electroplating bath has a chloride content ranging from 7.5 to 40 g/l. The present invention is also related to a method for depositing a nickel coating on a substrate to be treated; and the use of such an inventive nickel electroplating bath for depositing a bright, semi-bright, satin, matte or non- conductive particle containing nickel coating by conducting such a method.
Aqueous acidic copper electroplating bath comprising: copper ions; at least one acid; halide ions; at least one sulfur containing compound selected form the group consisting of sodium 3-mercaptopropylsulfonate, bis(sodiumsulfopropyl)disulfide, 3-(N,N- dimethylthiocarbamoyl)-thiopropanesulfonic acid or the respective sodium salt thereof and mixtures of the aforementioned; at least one amine reaction product of diethylamine with epichlorohydrin or an amine reaction product of isobutyl amine with epichlorohydrin or mixtures of these reaction products; at least one ethylene diamine compound selected from the group having attached EO-PO-block polymers, attached EO-PO-block polymers and sulfosuccinate groups and mixtures thereof; at least one aromatic reaction product of benzylchloride with at least one polyalkylenimine and a method for electrolytically depositing of a copper coating using the electroplating bath.
The present invention relates to an electroless nickel alloy plating bath comprising nickel ions; further reducible metal ions selected from the group consisting of molybdenum ions, rhenium ions, tungsten ions, and mixtures thereof; at least one reducing agent suitable to reduce the nickel ions and the further reducible metal ions to their respective metallic state, at least three complexing agents CA1, CA2 and CA3 wherein each of CA1, CA2 and CA3 is independently selected from the group consisting of compounds having at least two carboxylic acid moieties, the respective salts thereof as well as mixtures of the aforementioned. The present invention further concerns a method for depositing nickel alloy deposits, their use and data storage devices comprising such alloys.
The present invention relates to a method for electrolytically depositing a chromium or chromium alloy layer on at least one substrate, the method comprising the steps (a) providing an aqueous deposition bath with a pH in the range from 4.1 to 7.0, - comprising trivalent chromium ions, - comprising 0 mg/L to 200 mg/L hexavalent chromium, based on the total volume of the deposition bath, and - not comprising boron containing compounds, (b) providing the at least one substrate and at least one anode, (c) immersing the at least one substrate in the aqueous deposition bath and ¨applying an electrical direct current such that the chromium or chromium alloy layer is deposited on the at least one substrate, wherein the at least one substrate forms the cathode having a total cathodic current density and the at least one anode having a total anodic current density, with the proviso that - the total anodic current density is 6 A/dm2 or more, - the total cathodic current density is 18 A/dm2 or more, - the at least one substrate and the at least one anode are present in the deposi- tion bath such that the trivalent chromium ions are in contact with the at least one anode.
The present invention refers to a controlled method for depositing a chromium or chromium alloy layer on at least one substrate, the method comprising the steps (a) providing an aqueous deposition bath, wherein the bath comprises - trivalent chromium ions, - bromide ions, - alkali metal cations in a total amount of 0 mol/L to 1 mol/L, based on the total volume of the deposition bath, and the bath has - a target pH within the range from 4.1 to 7.0, (b) providing the at least one substrate and at least one anode, (c) immersing the at least one substrate in the aqueous deposition bath and applying an electrical direct current such that the chromium or chromium alloy layer is deposited on the substrate, the substrate being the cathode, wherein during or after step (c) the pH of the deposition bath is lower than the target p H, (d) adding NH4OH and/or NH3 during or after step (c) to the deposition bath such that the target pH of the deposition bath is recovered.
The present invention refers to a substrate holder loading device to be used in a clean room and a clean room treatment device containing such substrate holder loading device. Furthermore, the present invention refers to a method of loading a substrate holder with a first substrate, more preferably with a first and a second substrate.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
58.
PYRIDINIUM COMPOUNDS, A SYNTHESIS METHOD THEREFOR, METAL OR METAL ALLOY PLATING BATHS CONTAINING SAID PYRIDINIUM COMPOUNDS AND A METHOD FOR USE OF SAID METAL OR METAL ALLOY PLATING BATHS
The present invention concerns pyridinium compounds, a synthesis method for their preparation, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths. The plating baths are particularly suitable for use in filling of recessed structures in the electronics and semiconductor industry including dual damascene applications.
The present invention relates to a method for electrolytically passivating an outermost chromium or outermost chromium alloy layer to increase corrosion resistance thereof, the method comprising the steps of: (i) providing a substrate comprising said outermost chromium or outermost chromium alloy layer, (ii) providing or manufacturing an aqueous, acidic passivation solution, the solution comprising: - trivalent chromium ions, - phosphate ions, - one or more than one organic acid residue anion, (iii) contacting the substrate with the passivation solution and passing an electrical current between the substrate as a cathode and an anode in the passivation solution such that a passivation layer is deposited onto the outermost layer, wherein in the passivation solution said trivalent chromium ions are obtained by chemically reducing hexavalent chromium in the presence of phosphoric acid through at least one reducing agent selected from the group consisting of hydrogen peroxide and organic reducing agents, with the proviso that during or after the chemical reducing the one or more than one organic acid residue anion is present for the first time in the passivation solution.
The present invention concerns a tin plating bath comprising tin ions; at least one complexing agent selected from the group consisting of pyrophosphate ions, linear polyphosphate ions and cyclic polyphosphate ions and a nitrogen and sulfur containing stabilizing additive and titanium (III) ions as a reducing agent suitable to reduce tin ions to metallic tin. The present invention further discloses a method of depositing tin or a tin alloy onto a surface of a substrate. The tin plating bath is particularly suitable to be used in the electronics and semiconductor industry.
C25D 3/32 - Electroplating; Baths therefor from solutions of tin characterised by the organic bath constituents used
C23C 18/52 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C25D 7/00 - Electroplating characterised by the article coated
61.
METHOD OF FORMING A SOLDERABLE SOLDER DEPOSIT ON A CONTACT PAD
The present invention relates to a method of forming a solderable solder deposit on a contact pad (B), comprising the steps of (i) providing or manufacturing an organic, non-conductive substrate (A) which exposes said contact pad under an opening (F) of a first non-conductive resist layer (C), (ii) depositing a conductive layer (G) inside (G") and outside (G') the opening such that an activated surface results, thereby forming an activated opening (iii) electrolytically depositing nickel (D) or a nickel alloy (D) into the activated opening such that nickel/nickel alloy is deposited onto the activated surface, (iv) electrolytically depositing tin (E) or a tin alloy (E) onto the nickel/nickel alloy deposited in step (iii), with the proviso that the electrolytic deposition of steps (iii) or (iv) results in an entirely filled activated opening, wherein the entirely filled activated opening is completely filled with said nickel/nickel alloy, or in the entirely filled activated opening the total volume of nickel/nickel alloy is higher than the total volume of tin and tin alloy, based on the total volume of the entirely filled activated opening.
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
H05K 3/10 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
The present invention refers to a new type of transport roller providing a modified surface to provide improved transport properties for new substrates. Furthermore, it refers to horizontal transport systems beneficially utilizing such transport rollers, especially for providing retaining roller pairs. Additionally, the present invention refers to a treatment device containing such transport roller or horizontal transport system. Furthermore, it refers to a method for treating a substrate and the use of such transport roller.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
63.
A METHOD OF DEPOSITING A TIN LAYER ON A METAL SUBSTRATE AND A USE OF A STRUCTURE COMPRISING A NICKEL/PHOSPHOROUS ALLOY UNDERLAYER AND SAID TIN LAYER WITH SAID METHOD
To achieve tin deposits being largely free of pressure induced whiskers, a method of depositing a tin layer on a metal substrate is devised, wherein said method comprises: (a) providing said metal substrate; (b) depositing a nickel/phosphorous alloy underlayer on at least one surface of said metal substrate; and (c) depositing said tin layer on said nickel/phosphorous alloy underlayer by depositing said tin layer comprising using a pulse plating method.
C25D 5/18 - Electroplating using modulated, pulsed or reversing current
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
H01R 13/03 - Contact members characterised by the material, e.g. plating or coating materials
C25D 5/12 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
64.
WAFER-LIKE SUBSTRATE PROCESSING METHOD, APPARATUS AND USE THEREOF
The present invention refers to a method for processing a wafer like substrate using a touching gripper and a touchless gripper. Furthermore, the present invention refers to an apparatus for processing a wafer-like substrate containing a touching gripper and a touchless gripper. Additionally, the present invention refers to the use of an inventive apparatus to process a wafer-like substrate.
C25D 17/00 - Constructional parts, or assemblies thereof, of cells for electrolytic coating
C25D 17/06 - Suspending or supporting devices for articles to be coated
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C25F 1/00 - Electrolytic cleaning, degreasing, pickling, or descaling
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23F 1/00 - Etching metallic material by chemical means
A method for manufacturing a printed circuit board, comprising in this order the steps (i) providing a non-conductive substrate having on at least one surface - a coper circuitry with a copper surface, wherein the copper surface is - chemically treated by (a) an oxidation and subsequent reduction reaction and/or (b) an organic compound attached to the copper surface, - a permanent, non-conductive, not fully polymerized cover layer covering at least partially said copper surface, (ii) thermally treating the substrate with the permanent, non-conductive, not fully polymerized cover layer at a temperature in the range from 40°C to 250°C in an atmosphere, which contains molecular oxygen in an amount of 100000 ppm or less, based on the total volume of the atmosphere, such that a substrate with a permanent, non-conductive cover layer is obtained, the cover layer being more polymerized compared to step (i), with the proviso: - that step (ii) is carried out after step (i) but before any metal or metal alloy is deposited onto the permanent, non-conductive, not fully polymerized cover layer, and - that in step (ii) the permanent, non-conductive, not fully polymerized cover layer is fully polymerized in solely one single thermal treating step, if the cover layer is a solder mask.
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
The present invention relates to a method for post-treatment of a chromium finish surface to improve corrosion resistance comprising a) providing a substrate having a chromium finish surface, and at least one intermediate layer between the chromium finish surface and the substrate, selected from the group consisting of nickel, nickel alloys, copper and copper alloys, wherein the chromium finish surface is a surface of a trivalent chromium plated layer, obtained by electroplating the substrate, having the at least one intermediate layer, in a plating bath, the plating bath comprising chromium (III) ions as a main chromium source; b) contacting the chromium finish surface with an aqueous solution, comprising a permanganate, at least one compound which is selected from a phosphorus-oxygen compound, a hydroxide, a nitrate, a borate, boric acid, a silicate, or a mixture of two or more of these compounds; c) forming a transparent corrosion protection layer onto the chromium finish surface during contacting the chromium surface with the aqueous solution in step b); and to the use of said aqueous solution.
The present invention relates to a method for providing a multilayer coating on a surface of a sub- strate comprising the following method steps (i) providing the substrate; (ii) depositing at least one metal oxide compound onto the surface of the substrate; (iii) heat-treating the surface of the substrate such that a metal oxide is formed thereon; (iv) treating the surface of the substrate with a treatment solution comprising at least one nitrogen containing polymeric treatment additive; (v) treating the surface of the substrate with an activation solution; and (vi) treating the surface of the substrate with a metallising solution such that a metal or metal alloy is deposited thereon. The invention further concerns the use of treatment additives as enhancer for the metal deposition.
C23C 18/12 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/18 - Pretreatment of the material to be coated
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
68.
DEVICE FOR VERTICAL GALVANIC METAL DEPOSITION ON A SUBSTRATE
The present invention is related to a device for vertical galvanic metal, preferably copper, deposition on a substrate comprising at least a first device element and a second device element, which are arranged in a vertical manner parallel to each other; wherein the first device element comprises at least a first anode element having a plurality of through-going conduits and at least a first carrier element having a plurality of throughgoing conduits; wherein said at least first anode element and said at least first carrier element are firmly connected to each other; wherein the second device element comprises at least a first substrate holder which is adapted to receive at least a first substrate to be treated, wherein said at least first substrate holder is at least partially surrounding the at least first substrate to be treated along its outer frame after receiving it, wherein the at least first device element further comprises a plurality of plugs, wherein each plug comprises at least a through-going channel, and wherein each plug is arranged in such a way that each plug is running from the backside of the at least first carrier element through a through-going conduit of the at least first carrier element and further through the respective in front lying through-going conduit of the at least first anode element, and wherein all of the plugs are detachably connected to the at least first device element. Further, the present invention is generally directed to a method for vertical galvanic metal deposition on a substrate using such a device.
The present invention relates to a method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor, the use of an acidic palladium plating bath (as defined below) for directly depositing metallic palladium or a palladium alloy onto a non-activated surface of a doped or non-doped gallium nitride semiconductor, and a palladium or palladium alloy coated, doped or non-doped gallium nitride semiconductor.
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/44 - Coating with noble metals using reducing agents
The present invention relates to an acidic aqueous composition (plating bath) for electrolytic copper plating (electrolytic deposition of copper), the composition comprising (i) copper (II) ions, (ii) one or more than one compound of Formula (la), (iii) one, two, three or more than three further compounds, which are different from the compound of Formula (la), with the definitions given below, the use of the acidic aqueous composition according to the invention for electrolytic copper plating, the use of the compound of Formula (la) in an acidic aqueous composition for electrolytic metal plating, a method of electrolytic copper plating using the acidic aqueous composition according to the invention, and specific compounds derived from Formula (la) for an acidic aqueous composition for electrolytic metal plating.
A water-based composition for post-treatment of metal surfaces, preferably a silver or silver alloy surface, comprising an alkanethiol an anionic, cationic, non-ionic, amphoteric or zwitterionic surfactant with a HLB value of 12 to 18, a compound of the general formula (I) wherein R1 is -H, -CH3, -C2H5, -(C2H4O)p-H, -(C2H4O)p-CH3, -(C2H4O)p-CH(CH3)2, -(C2H4O)p-C(CH3)3, wherein p is 1 to 20, R2 is H, or CH3 n is an integer in the range of 0 to 3, m is an integer in the range of 0 to 2.
The present invention refers to an electrostatic discharge unit especially providing an easy and flexible upgrade of existing modules and treatment devices to enable an efficient discharge of substrates. Furthermore, the present invention refers to the use of such electrostatic discharge units and a method of discharging substrates using such electrostatic discharge units.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
73.
METHOD FOR MONITORING THE TOTAL AMOUNT OF BRIGHTENERS IN AN ACIDIC COPPER/COPPER ALLOY PLATING BATH AND CONTROLLED PROCESS FOR PLATING
The present invention relates to a method for monitoring the total amount of brighteners in an acidic copper/copper alloy plating bath during a copper/copper alloy plating process, the use of such a method for controlling a plating process, a controlled process for electrolytically depositing copper/copper alloy onto a substrate utilizing the method for monitoring according to the present invention, and the use of one or more than one redox active compound for monitoring and/or determining the total amount of brighteners in the acidic copper/copper alloy plating bath of.
G01N 27/42 - Measuring deposition or liberation of materials from an electrolyte; Coulometry, i.e. measuring coulomb-equivalent of material in an electrolyte
74.
A NON-AQUEOUS STRIPPING COMPOSITION AND A METHOD OF STRIPPING AN ORGANIC COATING FROM A SUBSTRATE
To achieve efficient stripping of organic coatings from sensitive substrate without affecting the substrate surface, a novel non-aqueous stripping composition and method are provided. The stripping composition comprises: A. at least one high-boiling solvent selected from the group, consisting of alcohols having general chemical formula R-OH, wherein R is a C4-C30 hydrocarbon group, wherein the high-boiling solvent has a boiling point of at least 100 °C; B- at least one high-boiling co-solvent selected from the group, consisting of high-boiling glycols, glycol ethers and amine compounds, wherein the high-boiling co-solvent has a boiling point of at least 100 °C; and C- at least one pH-active agent either selected from the group, consisting of acid compounds or selected from the group, consisting of hydroxide compounds.
The present invention relates to a process for depositing a metal or metal alloy on at least one surface of a substrate comprising the steps of (a) providing said substrate; (b) treating the surface of said substrate with an activation solution comprising at least one source of metal ions selected from the group consisting of ruthenium, rhodium, palladium, osmium, iridium, platinum, copper, silver, nickel, cobalt, gold and mixtures thereof such that at least one portion of said metal ions is being adsorbed on the surface of said substrate; (c) treating the surface of said substrate obtained from step (b) with a treatment solution comprising i) at least one additive independently selected from the group consisting of thiols, thioethers, disulphides and sulphur containing heterocycles, and ii) at least one reducing agent suitable to reduce the metal ions adsorbed on the surface of said substrate selected from the group consisting of boron based reducing agents, sources of hypophosphite ions, hydrazine and hydrazine derivatives, ascorbic acid, iso-ascorbic acid, sources of formaldehyde, glyoxylic acid, sources of glyoxylic acid, glycolic acid, formic acid, sugars, and salts of aforementioned acids; and (d) treating the surface obtained from step (c) of said substrate with a metallizing solution comprising a solvent and at least one source of metal ions to be deposited such that a metal or metal alloy is deposited thereon. The process for substrate metallization is mostly useful in the electronics industry but also applicable in processes for the metallization of typical non-conductive substrates like plastics. The process is cost-effective and ecologically advantageous due to its reducing the necessary amount of overall chemicals.
C23C 18/40 - Coating with copper using reducing agents
C23C 18/18 - Pretreatment of the material to be coated
C23C 18/24 - Roughening, e.g. by etching using acid aqueous solutions
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
76.
METHOD FOR RECOVERING PHOSPHORIC ACID FROM A SPENT PHOSPHORIC ACID / ALKALI METAL PERMANGANATE SALT ETCHING SOLUTION
This invention pertains to a method for recovering phosphoric acid from a spent phosphoric acid / alkali metal permanganate salt etching solution containing at least one manganese oxide, characterized in that said process comprises the following successive steps: (a) heating the etching solution to a temperature between 90°C and 200°C so as to coalesce said at least one manganese oxide, (b) cooling down the resulting suspension, (c) centrifuging the cooled suspension so as to separate a liquid phase from a solid phase, and (d) recovering said liquid phase which contains phosphoric acid. It also pertains to a process for metallizing a non-conductive substrate, comprising an oxidation step with an etching solution, in which said etching solution is treated according to the above method.
C25D 5/56 - Electroplating of non-metallic surfaces of plastics
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/18 - Pretreatment of the material to be coated
C23C 18/20 - Pretreatment of the material to be coated of organic surfaces, e.g. resins
C23C 18/24 - Roughening, e.g. by etching using acid aqueous solutions
C23C 18/54 - Contact plating, i.e. electroless electrochemical plating
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
In order to provide a more reliable and cost-efficient way of producing lead-frames or lead- frames structures which expose treated silver surfaces as well as to provide surface mount electronic devices using such lead-frames or lead-frames structures, a method comprising the following method steps carried out in this order is provided: (a) providing a lead-frame body structure having two main sides, said lead-frame body structure exclusively exposing a copper surface on each one of said main sides; (b) depositing a silver coating on at least one of said main sides, so that said at least one of said main sides at least partially exposes an untreated silver surface; and (c) electrolytically treating said untreated silver surface on said at least one of said main sides generated in method step (b) with a treatment solution containing at least one hydroxide compound selected from alkali metal hydroxides, alkaline earth metal hydroxides, ammonium hydroxides and mixtures thereof, wherein the lead-frame body structure is a cathode, thereby producing a lead-frame structure which comprises at least two lead-frame entities each one having two faces and at least partially exposing said treated silver surface; wherein said at least one of said two faces of at least one of said lead-frame entities either exclusively exposes said treated silver surface or wherein said at least one of said two faces of said at least one of said lead-frame entities partially exposes said treated silver surface and partially exposes said copper surface, wherein, on each one of said two faces of each one of said lead-frame entities which partially exposes said treated silver surface, the area of said copper surface is smaller than the area of said treated silver surface.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
C25D 5/02 - Electroplating of selected surface areas
C25D 5/34 - Pretreatment of metallic surfaces to be electroplated
C25D 5/48 - After-treatment of electroplated surfaces
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/54 - Contact plating, i.e. electroless electrochemical plating
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
C25D 3/46 - Electroplating; Baths therefor from solutions of silver
C23C 18/18 - Pretreatment of the material to be coated
An aqueous indium or indium alloy plating bath comprising - a source of indium ions, - an acid, - a source of halide ions, - a surfactant according to formula (I) wherein A is selected from branched or unbranched C10-C15-alkyl; B is selected from the group consisting of hydrogen and alkyl; m is an integer ranging from 5 to 25; each R is independently from each other selected from hydrogen and methyl; and - a dihydroxybenzene derivative according to formula (II) wherein each X is independently selected from fluorine, chlorine, bromine, iodine, alkoxy, and nitro; n is an integer ranging from 1 to 4, and a process for deposition of indium or an indium alloy wherein said bath is used.
The invention relates to an aqueous plating bath composition for electroless deposition of nickel or a nickel alloy, the composition comprising: (i) a source of nickel ions, wherein the aqueous plating bath composition further comprises (ii) at least one accelerating compound which is a 1 -acylguanidine compound having general chemical formula I, wherein R1 is selected from the group comprising alkyl and aryl; R2 is a radical having general chemical formula -R4-SO3M, wherein R4 is selected from the group comprising alkylene and arylene; wherein M is hydrogen or a metal atom or any other cation forming radical having a valency of one or is an mth fraction of a metal atom or any other cation forming radical having a valency of m, wherein m is 2 or 3; R3 is selected from the group comprising -Hal, -OR5, and -NR5R6, wherein R5, R6 are independently selected from the group comprising hydrogen, alkyl and aryl; and n is an integer ranging from 1 to 5. Formula I.
C23C 18/34 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents
C23C 18/36 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents using hypophosphites
C07C 279/20 - Derivatives of guanidine, i.e. compounds containing the group the singly-bound nitrogen atoms not being part of nitro or nitroso groups containing any of the groups X being a hetero atom, Y being any atom, e.g. acylguanidines
80.
ELECTROLESS NICKEL PLATING BATHS COMPRISING AMINONITRILES AND A METHOD FOR DEPOSITION OF NICKEL AND NICKEL ALLOYS
Aqueous electroless nickel plating baths comprising at least one source of nickel ions are characterised in that they comprise at least one aminopropanenitrile derivative. Such aqueous electroless nickel plating baths are useful for the deposition of nickel and nickel alloy. The deposited nickel or nickel alloy layers are advantageously corrosion resistant due to their high compressive stress. Also, the aqueous electroless nickel plating bath comprising said compounds are very stable and show improved resistance to plate-out.
C23C 18/34 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents
C23C 18/36 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents using hypophosphites
C23C 18/50 - Coating with alloys with alloys based on iron, cobalt or nickel
81.
ETCHING SOLUTION FOR COPPER AND COPPER ALLOY SURFACES
An aqueous etching solution for copper and copper alloy surfaces comprising at least one acid, at least one oxidising agent suitable to oxidise copper, at least one source of halide ions and further at least one polyamide containing at least one polymeric moiety according to formula (I) wherein each a is independently from each other selected from 2 and 3; each b is an integer independently from each other ranging from 5 to 10000; each R 1 is a monovalent residue independently from each other selected from the group consisting of substituted or unsubstituted C1-C8-alkyl groups and a method for its use are provided. Such etching solution is particularly useful for retaining the shape of treated copper and copper alloy lines.
The present invention relates to a method for monitoring the total amount of sulphur containing compounds in a metal or metal alloy plating bath, wherein the sulphur containing compounds contain at least one sulphur atom having an oxidation state below +6, the method comprising the steps (a), (b), optionally (c), and (d). Said method is a means of providing control over a metal plating process. Thus, the present invention relates furthermore to a controlled process for plating a metal on a substrate utilizing the method of the present invention for monitoring the total amount of said sulphur containing compounds.
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/40 - Coating with copper using reducing agents
G01N 27/42 - Measuring deposition or liberation of materials from an electrolyte; Coulometry, i.e. measuring coulomb-equivalent of material in an electrolyte
G01N 27/49 - Systems involving the determination of the current at a single specific value, or small range of values, of applied voltage for producing selective measurement of one or more particular ionic species
This invention concerns a method for galvanic metal deposition of a substrate using an anode and an electrolyte, wherein from each of a plurality of electrolyte nozzles a locally confined electrolyte stream is directed towards a part of a substrate surface which is to be treated, wherein a relative movement is carried out between the substrate and the electrolyte stream during deposition, characterized in that a first movement is carried out along a first path, wherein at least along a part of the first path a second movement is carried out along a second path, wherein the first and the second movement each are relative movements between the electrolyte stream and the substrate. Further, the invention concerns a substrate holder reception apparatus and an electrochemical treatment apparatus.
The invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the invention comprises a source for palladium ions, a reducing agent for palladium ions and a cyanide group containing aromatic compound. The aqueous plating bath composition according to the invention has an improved stability against undesired decomposition due to the cyanide group containing aromatic compounds while keeping the deposition rate for palladium at the desired satisfying value. The aqueous plating bath composition has also a prolonged life time. The cyanide group containing aromatic compounds of the invention allow for adjusting the deposition rate to a satisfying range over the bath life time and for electrolessly depositing palladium layers at lower temperatures.
The invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the invention comprises a source for palladium ions, a reducing agent for palladium ions and an unsaturated compound. The aqueous plating bath composition according to the invention has an improved stability against undesired decomposition due to the unsaturated compounds while keeping the deposition rate for palladium at the desired satisfying value. The aqueous plating bath composition has also a prolonged life time. The unsaturated compounds of the invention allow for adjusting the deposition rate to a satisfying range over the bath life time and for electrolessly depositing palladium layers at lower temperatures.
The present invention is related to a galvanic plating device of a horizontal galvanic plating processing line for galvanic metal, in particular copper, deposition; wherein said galvanic plating device comprises at least a first galvanic plating module, which is arranged below a transport level of a substrate to be treated, and at least a plating clamp arranged on a first side of the galvanic plating device; wherein said first galvanic plating module comprises at least an electrolyte nozzle and at least an anode element inside of said galvanic plating module, wherein said galvanic plating module further comprises at least a covering plate having a plurality of openings arranged above the anode element and the electrolyte nozzle, wherein the galvanic plating device further comprises at least a substrate guiding element arranged on the surface of the covering plate of the galvanic plating module, wherein said substrate guiding element is in conjunction with said surface of the covering plate of the galvanic plating module. The present invention is further related to the use of such a galvanic plating device for galvanic metal, preferably copper, deposition on printed circuit foils, flexible printed circuit boards and embedded chip substrates.
A surface treatment solution for copper and copper alloy surfaces comprising an acid and an oxidising agent selected from the group consisting of hydrogen perox- ide, metal peroxides, metal superoxides and mixtures thereof, at least one source of chloride ions and at least one source of bromide ions. The surface treatment solu- tion is particularly useful in the manufacturing of printed circuit boards, IC substrates and other electronic appliances.
The present invention deals with a process for deposition of indium or indium alloys and an article obtained by the process, wherein the process comprises the steps • i. providing a substrate having at least one metal or metal alloy surface; • ii. depositing a first indium or indium alloy layer on at least one portion of said surface whereby a composed phase layer is formed of a part of the metal or metal alloy surface and a part of the first indium or indium alloy layer; • iii. removing partially or wholly the part of the first indium or indium alloy layer which has not been formed into the composed phase layer; • iv. depositing a second indium or indium alloy layer on the at least one portion of the surface obtained in step iii. • v.
C25D 5/10 - Electroplating with more than one layer of the same or of different metals
C25D 5/12 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
C25D 5/48 - After-treatment of electroplated surfaces
C25D 7/00 - Electroplating characterised by the article coated
C25F 5/00 - Electrolytic stripping of metallic layers or coatings
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
89.
PLATING BATH COMPOSITION FOR ELECTROLESS PLATING OF GOLD AND A METHOD FOR DEPOSITING A GOLD LAYER
An electroless aqueous gold plating bath, comprising at least one source of gold ions and at least one reducing agent for gold ions, characterized in that it comprises at least one ethylenediamine derivative as plating enhancer compound according to formula (I), wherein the residues R1 and R2 comprise 2 to 12 carbon atoms and are selected from the group consisting of branched alkyl, unbranched alkyl, cycloalkyl or combinations thereof wherein the individual residues R1 and R2 are the same or different and a method of depositing of gold. The electroless aqueous gold plating bath is suitable to provide soft gold layers useful for wire bonding and soldering applications which are required for electronic components.
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/18 - Pretreatment of the material to be coated
C23C 18/44 - Coating with noble metals using reducing agents
90.
COPPER PLATING BATH COMPOSITION AND METHOD FOR DEPOSITION OF COPPER
The present invention relates to aqueous acidic plating baths for copper deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of copper ions, at least one acid and an additive obtainable by a reaction of at least one aminoglycidyl compound comprising at least one amino group which bears at least one glycidyl moiety and at least one second compound selected from ammonia and amine compounds wherein the amine compounds comprise at least one primary or secondary amino group with the proviso that the aminoglycidyl compound contains at least one polyoxyalkylene residue and/or the amine compound contains at least one polyoxyalkylene residue. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 7/00 - Electroplating characterised by the article coated
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
91.
AQUEOUS COPPER PLATING BATHS AND A METHOD FOR DEPOSITION OF COPPER OR COPPER ALLOY ONTO A SUBSTRATE
The present invention relates to bisurea derivatives and their use in aqueous plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of copper ions and a bisurea derivative. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.
The present invention relates to imidazoyl urea polymers and their use in aqueous acidic plating baths for metal or metal alloy deposition such as electrolytic deposition of copper or alloys thereof in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of metal ions and an imidazoyl urea polymer. The plating bath is particularly useful for filling recessed structures and build-up of pillar bump structures.
This invention concerns a substrate holder reception apparatus (1) for clamping a substrate holder (11) in a substrate holder clamping direction (SHCD) in a predetermined position of the substrate holder (11) and releasing the substrate holder (11), comprising at least one substrate holder connection device (21) for mechanical aligning and electrically contacting of the substrate holder (11), wherein the substrate holder connection device (21) comprises a separate substrate holder alignment device (211) for aligning the substrate holder (11) with the substrate holder connection device (21) in an alignment direction, and a separate substrate holder contact device (212) for electrically contacting the substrate holder (11). Further, the invention concerns an electrochemical treatment apparatus (5) comprising the substrate holder reception apparatus (1).
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C25D 21/00 - Processes for servicing or operating cells for electrolytic coating
The present invention relates to an acidic aqueous composition for treating of zirconium-pretreated metal-based substrate surfaces such as steel metals or aluminium surfaces, a process for treating the substrate surfaces with the composition and the use of the composition as post-treatment of zirconium- pretreated metal-based substrate surfaces for subsequent electrocoating of the surfaces to increase corrosion resistance of said metal-based surfaces prior to electro-coating (e-coat) applications and increases detergent and chemical resistance of treated surfaces used in the white goods industry. The acidic aqueous composition comprising a. trivalent chromium ions; b. hexafluorozirconate ions; characterized in that the source of trivalent chromium ions is a trivalent chromium nitrate salt.
C23C 22/34 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 containing fluorides or complex fluorides
C23C 22/80 - Pretreatment of the material to be coated with solutions containing titanium or zirconium compounds
The invention relates to a process for manufacturing of fine line circuitry, comprises: providing a dielectric substrate; coating a masking layer onto at least one side of said dielectric substrate, wherein the masking layer is a hydrophobic material having a contact angle against water of at least 90° determined by the static sessile drop method; forming openings in said dielectric substrate on the side bearing the masking layer; depositing a conductive metal seed layer selectively in said openings by electroless (autocatalytic) plating from a first plating bath composition; and filling said openings with at least one filling material selected from the group consisting of metals, metal alloys and optically transparent materials.
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
H05K 3/10 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
96.
ELECTROLYTIC COPPER PLATING BATH COMPOSITIONS AND A METHOD FOR THEIR USE
The present invention relates to aqueous acidic plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of copper ions, at least one acid and at least one guanidine compound. The plating bath is particularly useful for plating recessed structures with copper and build-up of copper pillar bump structures.
The present invention is related to a flooding device for a horizontal gal¬ vanic or wet-chemical process line for metal, in particular copper, deposition on a substrate to be treated, wherein the flooding device comprises at least a flooding element and at least a first substrate guiding element, wherein said flooding element is mechanically connected to the at least first substrate guiding element, and wherein the first substrate guiding element is spatially arranged on the entry side of the flooding element. The present invention is further related to a treating module of a horizon- tal galvanic or wet-chemical process line for metal, in particular copper, deposi¬ tion on a substrate to be treated comprising at least one pair of oppositely ar¬ ranged such flooding devices.
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
The present invention relates to an activation composition for activation of silicon substrates, which is an aqueous solution comprising a source of palladium ions, a source of fluoride ions and at least two aromatic acids. The present invention further relates to a method for its use and optionally for subsequent metallization of such treated substrates. The method can be employed in semi-conductor and solar cell manufacturing.
The present invention concerns a method for increasing the adhesion between a chromium surface and a lacquer wherein said chromium surface is contacted with an aqueous solution comprising at least one phosphorous compound according to formulae R1-P(O)(OR2R3) 1 and R1-O-P(O)(OR2R3) 2 wherein R1 is a C1 to C12 alkyl group, linear, branched or cyclic comprising at least one polar residue and R2 and R3 are independently selected from the group consisting of hydrogen, lithium, sodium, potassium, ammonium and C1 to C4 alkyl while passing an external electrical current through said substrate and at least one anode wherein said substrate serves as the cathode.
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C09D 7/00 - Features of coating compositions, not provided for in group ; Processes for incorporating ingredients in coating compositions
C09D 5/00 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
C09D 5/44 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes for electrophoretic applications
The present invention concerns a method for forming a metal layer for electromagnetic shielding and thermal management of active components, preferably by wet chemical metal plating, using an adhesion promotion layer on the layer of molding compound and forming at least one metal layer on the adhesion promotion layer or forming at least one metal layer on the adhesion promotion layer by wet chemical metal plating processes.
patents
