A device for moving an object including a substrate through an open side of a processing station of a processing apparatus including a support, placeable at the processing station. The device includes a carrier, guided for movement relative to the support along a path predominantly directed in parallel to a reference axis in a reference co-ordinate system. The device includes a device for controlling movement of the carrier and driving the movement in an opposite direction along the path. The device includes a component for holding the object and a suspension mechanism with which the holding component is connected to the carrier. The suspension mechanism is arranged to guide movement of the holding component relative to the carrier along a holding component path. The device is arranged to drive the movement of the holding component along the holding component path. The holding component path is predominantly directed parallel to the reference axis.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
3.
TIN PLATING BATH AND A METHOD FOR DEPOSITING TIN OR TIN ALLOY ONTO A SURFACE OF A SUBSTRATE
The present invention concerns a tin plating bath comprising tin ions; titanium ions as reducing agent suitable to reduce tin ions to metallic tin; and at least one compound selected from the group consisting sulfites, dithionites, thiosulfates, tetrathionates, polythionates, disulfites, sulfides, disulfide, polysulfide, elemental sulfur or mixtures thereof. The present invention further discloses a method of depositing tin or a tin alloy onto a surface of a substrate. The tin plating bath is particularly suitable to be used in the electronics and semiconductor industry.
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
C23C 18/52 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups
4.
A METHOD FOR ACTIVATING A SURFACE OF A NON-CONDUCTIVE OR CARBON-FIBRES CONTAINING SUBSTRATE FOR METALLIZATION
Method for activating a surface of a non-conductive or carbon-fibres containing substrate for metallization, the method including:
(a) providing said substrate,
(b) providing an aqueous, palladium-free activation composition comprising
(i) a first species of dissolved transition metal ions and additionally metal particles thereof,
(ii) at least one complexing agent,
(iii) permanently or temporarily at least one reducing agent,
(iv) optionally one or more second species of dissolved metal ions different from the first species,
(c) contacting the substrate with said activation composition such that a transition metal or a transition metal alloy is deposited on the surface of said substrate and an activated surface for metallization is obtained.
The present invention relates to a method for increasing adhesion strength between a surface of a metal, a metal alloy or a metal oxide and a surface of an organic material comprising as a main step contacting of at least one section of said metal, metal alloy or metal oxide with a specific azole silane compound, a specific azole silane oligomer, or a mixture comprising said compound and/or said oligomer. Furthermore, the present invention relates to a use of said specific azole silane compound, said specific azole silane oligomer, or said mixture in a method for increasing adhesion strength between a surface of a metal, a metal alloy or a metal oxide and a surface of an organic material.
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
B32B 7/12 - Interconnection of layers using interposed adhesives or interposed materials with bonding properties
B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
C09J 4/00 - Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
6.
METHOD FOR OBTAINING INFORMATION ABOUT A LAYER OF AN ORGANIC SOLDERABILITY PRESERVATIVE ON A PRINTED CIRCUIT BOARD
A method for obtaining information about a layer of an organic solderability preservative on a printed circuit board, the method including
Providing or producing a printed circuit board (16) having a copper layer (18) covering a part of an area of the printed circuit board (16),
Providing a fluorescence measuring system (10),
the method including following steps
a) Obtaining (S2) information about the location of the openings (21) on the printed circuit board (16),
b) Selecting (S3) at least one of the openings (21), thereby obtaining at least one selected opening,
c) Moving (S4) the radiation source (11) and the printed circuit board (16) relatively to each other,
d) Detecting (S5) the fluorescent radiation (23).
The present invention is related to an aqueous post treatment composition for providing a post treatment layer on at least a part of a passivation layer, which is covering at least a part of a zinc layer being on at least a part of an iron containing substrate, characterized in that the aqueous post treatment composition comprises at least one chromium (III) ion source and at least one compound containing the chemical element silicon; wherein a molar ratio of silicon versus chromium is given in said composition, with the proviso that said molar ratio is ranging from 2600:1 to 1:1 for the zinc layer obtained by an electrolytic acid zinc deposition process; or that said molar ratio is ranging from 5200:1 to 1:1 for the zinc layer obtained by an electrolytic alkaline zinc deposition process.
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C25D 3/22 - Electroplating; Baths therefor from solutions of zinc
C25D 5/48 - After-treatment of electroplated surfaces
C23C 22/02 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
C25D 7/00 - Electroplating characterised by the article coated
The present invention is related to a membrane anode system for electrolytic zinc-nickel alloy deposition, a method for electrolytic deposition of a zinc-nickel alloy layer on a substrate to be treated using a membrane anode system, and the use of a membrane anode system for acid or alkaline electrolytic deposition of a zinc-nickel alloy layer on a substrate to be treated by such a method.
Galvanic nickel or nickel alloy electroplating bath for depositing a semi-bright nickel or semi-bright nickel alloy coating in which the electroplating bath includes at least one compound having the general formula (1) and/or a salt thereof
wherein the electroplating bath further comprises at least one acetylenic compound and chloral hydrate.
A method for depositing a chromium or chromium alloy layer on at least one substrate, the method comprising the steps (a) providing an aqueous deposition bath with a pH in the range from 4.1 to 6.9, the bath comprising trivalent chromium ions, formate ions, and optionally sulfate ions, (b) providing the at least one substrate and at least one anode, (c) immersing the at least one substrate in the aqueous deposition bath and applying an electrical current such that the chromium or chromium alloy layer is deposited on the substrate, the substrate being the cathode, wherein, if during or after step (c) the trivalent chromium ions have a concentration below a target concentration of trivalent chromium ions, then (d) adding dissolved trivalent chromium formate to the aqueous deposition bath such that trivalent chromium ions are present in a higher concentration than before step (d), with the proviso that solid trivalent chromium formate is dissolved in a separated partial volume taken from the aqueous deposition bath to obtain said dissolved trivalent chromium formate for step (d).
The invention relates to an aqueous alkaline pre-treatment solution for use prior to deposition of a palladium activation layer on a substrate in manufacturing an article with an integrated circuit and a method and use thereof, wherein the solution comprises:
at least one hydroxycarboxylic acid or salt thereof according to the general formula (I)
The invention relates to an aqueous alkaline pre-treatment solution for use prior to deposition of a palladium activation layer on a substrate in manufacturing an article with an integrated circuit and a method and use thereof, wherein the solution comprises:
at least one hydroxycarboxylic acid or salt thereof according to the general formula (I)
[RCH2—(RCH)n—COO−]m Mm+ (I)
The invention relates to an aqueous alkaline pre-treatment solution for use prior to deposition of a palladium activation layer on a substrate in manufacturing an article with an integrated circuit and a method and use thereof, wherein the solution comprises:
at least one hydroxycarboxylic acid or salt thereof according to the general formula (I)
[RCH2—(RCH)n—COO−]m Mm+ (I)
wherein n is integer from 2 to 4 and m is 1 or 2,
R is independently H or OH with proviso that at least one R is OH, and wherein Mm+ with m: 1 is hydrogen, ammonium or alkali metal; or Mm+ with m: 2 is earth alkali metal,
at least one polyoxyethylene sorbitan fatty acid ester,
at least one sulphonated fatty acid or a salt thereof.
An end effector for clamping a slab formed substrate (2) having a rim section (5) that is arranged at least approximately and at least partially in a substrate main plane comprises at least a pressing device (10) providing at least a pressing area (11), and at least a support device (20) providing at least a support area (21). The end effector (1) is configured, in a clamped state of the substrate (2), to clamp the substrate (2) at a first surface (3) by a pressing area (11) of a pressing device (10) and at a second surface (4) that is, in regard to the first surface (3), arranged at the opposite side of the substrate (2) by a support area (21) of a support device (20). The end effector comprises a guide (15) for guiding the pressing device (10) relative to the support device (20).
PROCESSING APPARATUS, SYSTEM AND METHOD FOR CONVEYING THERETHROUGH PARTS TO BE TREATED AND DEVICE FOR INTERCONNECTING A FIRST LINE AND A SECOND LINE OF THE SYSTEM
A device for interconnecting a first line (1a) and a second line (1b) of an overhead conveying system for conveying parts to be treated through a processing apparatus by means of at least one product carrier (7) comprising a transporter (19) and a part depending downwards from the transporter (19), in use, the transporter (19) comprising at least one runner (36,37) supported on at least one track (10a,b) comprises a main support structure (47). The device further comprises a movable support structure (48), at least indirectly supported by and movable relative to the main support structure (47) between at least a first position and a second position. The movable support structure (48) comprises at least one track segment (50a,b) for supporting at least one runner (36,37) of a transporter (19) in a support direction (z). Each track segment (50a,b) is alignable with a respective track (10a,b) of the first line (1a) in the first position and with a respective track (10a,b) of the second line (1b) in the second position such that an end of the track segment (50a,b) adjoins an end of the aligned track (10a,b) to allow a runner (36,37) to cross over between the aligned track (10a,b) and track segment (50a,b). The movement between the first position and the second position comprises a rotation about an axis (54) parallel to the support direction (z) and a translation with at least a component in axial direction. The at least one track segments(50a,b) comprise at least two track segments (50a,b), spaced apart in lateral direction. The movable support structure (48) defines a space for receiving at least part of a product carrier (7). The space is open at a top between the spaced-apart track segments (50a,b) and at opposite ends in longitudinal direction.
B61J 1/08 - Turntables; Integral stops for connecting inclined tracks or tracks of different height
B65G 49/04 - Conveying systems characterised by their application for specified purposes not otherwise provided for for conveying workpieces through baths of liquid the workpieces being immersed and withdrawn by movement in a vertical direction
The invention relates to aqueous acidic plating baths for electrodeposition of copper and copper alloys in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises copper ions, at least one acid and an ureylene polymer. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.
An electroless nickel or cobalt plating solution, comprising - nickel ions or cobalt ions, - Ti3+ ions as reducing agent for reducing said nickel ions and cobalt ions, - at least one accelerator selected from the group consisting of sulfites, dithionites, thiosulfates, tetrathionates, polythionates, disulfites, sulfides, disulfide, polysulfide, elemental sulfur and mixtures thereof; and - one or more than one complexing agent, wherein the pH value of the plating solution is from 5 to 10.5.
The present invention is directed to an aqueous basic etching composition for the treatment of surfaces of metal substrates, the composition comprising: (a) functionalized urea, biuret and guanidine derivatives and/or salts thereof selected from the group comprising compounds having formulae (I) and (II) and/or salts thereof, wherein X and Y are independently selected from the group comprising oxygen, NRR' and NR5, wherein R, R' and R5are independently selected from the group comprising R114144 alkyl optionally comprise at least one substituent selected as OR6, wherein R614 4 alkyl, wherein X and Y can be identical or different; R1and R2are independently selected from the group comprising hydrogen, alkyl compounds, amines, and nitrogen-comprising heteroaromatic compounds, wherein R1and R2can be identical or different, with the proviso that R1cannot be hydrogen, and with the proviso that in compounds having formula (I) R1 cannot be hydrogen or alkyl compound if X is oxygen; m is an integer from 1 to 4, preferably 3; and n is an integer from 0 to 8, preferably 2 to 4; wherein m and n can be identical or different; (b) an oxidizing agent for oxidizing the metals of the metal surface to be treated; and wherein the aqueous basic etching composition comprises a pH from 7.1 to 14.
C23C 22/34 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 containing fluorides or complex fluorides
C23C 22/40 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 containing molybdates, tungstates or vanadates
C23C 22/46 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 containing oxalates
C23F 1/34 - Alkaline compositions for etching copper or alloys thereof
C23F 1/40 - Alkaline compositions for etching other metallic material
A device for transporting a plurality of parts to be treated through an apparatus for wet-chemical treatment comprises a transporter (16), comprising at least one runner (39a, b, 40a, b) for supporting the transporter (16) for movement along at least one track (5a, b) in a first direction (x). At least part of the transporter (16) is located next to the runners (39a, b, 40a, b), seen in a second direction (y) transverse to the first direction (x). This part extends from a level below the runners (39a, b, 40a, b) to a level above the runners (39a, b, 40a, b) in a third direction (z) transverse to the first and second directions (x,y). The device further comprises a container (14) having an interior for accommodating the plurality of parts and a frame (15), at least indirectly connecting the container (14) to the transporter (16) to allow the transporter (16) to carry the container (14) at a level below the runners (39a, b, 40a, b). The frame (15) comprises a respective frame part (23a, b) at at least one of opposite axial ends of the container (14) with respect to an axis (18) of the container (14). The container (14) is liquid-pervious between the axial ends to allow liquid to flood the interior when the container (14) is immersed in the liquid. The axis (18) of the container (14) extends in a direction (x) transverse to the second and third directions (y,z).
B65G 49/04 - Conveying systems characterised by their application for specified purposes not otherwise provided for for conveying workpieces through baths of liquid the workpieces being immersed and withdrawn by movement in a vertical direction
A method for post-treatment of a chromium finish surface to improve corrosion resistance comprising a) providing a substrate having a chromium finish surface, and at least one intermediate layer between the chromium finish surface and the substrate, selected from the group consisting of nickel, nickel alloys, copper and copper alloys, wherein the chromium finish surface is a surface of a trivalent chromium plated layer, obtained by electroplating the substrate, having the at least one intermediate layer, in a plating bath, the plating bath comprising chromium (III) ions; b) contacting the chromium finish surface with an aqueous solution, comprising a permanganate, at least one compound which is selected from a phosphorus-oxygen compound, a hydroxide, a nitrate, a borate, boric acid, a silicate, or a mixture of two or more of these compounds; c) forming a transparent corrosion protection layer onto the chromium finish surface during step b.
C25D 9/06 - Electrolytic coating other than with metals with inorganic materials by anodic processes
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
19.
ACIDIC AQUEOUS COMPOSITION FOR ELECTROLYTICALLY DEPOSITING A COPPER DEPOSIT
22 groups, halogen atoms, and sulfur atoms; a method of electrolytic copper plating using the acidic aqueous composition; and specific suppressors as defined above.
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C07D 233/60 - Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, attached to ring carbon atoms with hydrocarbon radicals, substituted by oxygen or sulfur atoms, attached to ring nitrogen atoms
The present inventions refers to a method for forming a black-passivation layer on a zinc-iron alloy of a substrate, a black-passivation composition for depositing a black-passivation layer on such, wherein the black-passivation composition comprises one or more than one blackening agent selected from the group consisting of formula (I) and formula (II) as described hereinafter, and a respective use of said blackening agents for blackening a zinc-iron alloy.
C23C 22/34 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 containing fluorides or complex fluorides
C23C 22/46 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH < 6 containing oxalates
C23C 22/73 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals characterised by the process
C23C 22/80 - Pretreatment of the material to be coated with solutions containing titanium or zirconium compounds
This invention is related to a process for purification of metallic objects comprising an oil-adsorbing step in the presence of a liquid and a layer silicate component.
The present invention relates to a specific azole silane compound, an oligomer thereof, a mixture comprising said compound and/or said oligomer, as well as a respective storage and working solution. Furthermore, the present invention relates to a synthesis method for said specific azole silane compound, and the use of said working solution as a surface treatment solution.
The present invention relates to a composition comprising one or a mixture of two or more quinoline-polyethylene glycol containing compound, each quinoline-polyethylene glycol containing compound comprising:
one to three quinoline group and
one or more polyethylene glycol group,
wherein, in each said quinoline-polyethylene glycol containing compound, one to three of said one to three quinoline group is connected via one or more oxygen atom of said one or more polyethylene glycol group via carbon 6 or carbon 8 of said one to three quinoline group.
An electroless copper plating bath for depositing a copper or copper alloy layer on a surface of a substrate, including copper ions; a reducing agent; a complexing agent for copper ions; wherein the bath further includes at least one compound according to formula (1):
4 form together an aromatic ring, respectively.
C23C 18/40 - Coating with copper using reducing agents
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
The present invention is related to an acidic zinc or zinc-nickel alloy electroplating bath for depositing a zinc or zinc-nickel alloy layer and a method for zinc or zinc-nickel alloy electroplating making use of such an electroplating bath.
An electrode for an apparatus (1) for electrolytically treating a workpiece (3), the apparatus (1) being of a type arranged to convey the workpiece (3) with a surface to be treated past and directed towards a surface of the electrode, is divided into segments (23a-e) at at least this surface of the electrode. The segments (23a-e) are arranged next to each other in a first direction (x). Adjacent segments (23a-e) are separated from each other along respective segment edges (24a-f) such as to allow adjacent segments (23a-e) to be maintained at different respective voltages. The segment edges (24a-f) extend at least partly in a second direction (y) from a common value (y0) of a co-ordinate in the second direction (y) to an edge (25, 26) of at least an electrically conducting part of the electrode surface, the second direction (y) being transverse to the first direction (x) and corresponding to a direction of movement of the workpiece, in use. The segment edges (24a-f) between at least one pair of adjacent segments (23a-e) extend along respective paths of which an angle to the electrode surface edge (25, 26) decreases from the common value (y0) of the co-ordinate to the electrode surface edge (25, 26).
The present invention refers to an electroplating composition for depositing a chromium coating on a substrate, the composition comprising: (i) trivalent chromium ions, (ii) at least one complexing agent for the trivalent chromium ions, and (iii) at least one additive selected from the group consisting of betaines, polymeric glycols, monomeric diols, and mixtures thereof.
The present invention is directed to a method for depositing a zinc-nickel alloy on a substrate, the method comprising the steps: (a) providing the substrate, (b) providing an aqueous zinc-nickel deposition bath as a catholyte in a deposition compartment, wherein - the deposition compartment comprises at least one anode with an anolyte, and - the anolyte is separated from the catholyte by at least one membrane, and the catholyte comprises (i) nickel ions, (ii) at least one complexing agent for nickel ions, and (iii) zinc ions, (c) contacting the substrate with the catholyte in the deposition compartment such that the zinc-nickel alloy is electrolytically deposited onto the substrate and thereby obtaining a zinc-nickel coated substrate, wherein after step (c) the nickel ions in the catholyte have a lower concentration than before step (c), (d) rinsing the zinc-nickel coated substrate in a rinsing compartment comprising water, such that a rinsed zinc-nickel coated substrate and rinse water is obtained, wherein the rinse water comprises a portion of the at least one complexing agent for nickel ions and a portion of the nickel ions, characterized in that (i) at least a portion of the rinse water and/or at least a portion of the catholyte is treated in a first treatment compartment such that water is separated from the at least one complexing agent for nickel ions and the nickel ions, (ii) at least a portion of the at least one complexing agent separated from water is returned into the catholyte, and (iii) a nickel ion source is added to the catholyte, with the proviso that the nickel ion source does not comprise said at least one complexing agent for nickel ions or any other complexing agent for nickel ions.
The present inventions refers to a passivation composition for depositing a chromium-comprising passivation layer on a zinc or zinc-nickel coated substrate, the composition comprising: (i) trivalent chromium ions, (ii) at least one complexing agent for the trivalent chromium ions, being different from the at least one corrosion-inhibiting agent, and (iii) at least one corrosion-inhibiting agent, which is (A) one or more than one substituted azole compound and/or salts thereof, together in a total concentration below 10 mg/L, based on the total volume of the passivation composition, and/or (B) one or more than one unsubstituted or substituted aliphatic organic acid with at least one mercapto-group and/or salts thereof, together in a total concentration in a range from 0.001 mg/L to 100 mg/L, based on the total volume of the passivation composition.
The present inventions refers to a method for reducing the concentration of iron ions in a trivalent chromium electroplating bath, the method comprising the following steps: (i) providing the trivalent chromium electroplating bath comprising (a) trivalent chromium ions, and (b) iron ions, (ii) subjecting at least a portion of the trivalent chromium electroplating bath to air agitation, to obtain at least an air-agitated portion of the trivalent chromium electroplating bath, (iii) contacting the air-agitated portion of the trivalent chromium electroplating bath with an ion exchange resin, to obtain a resin-treated portion of the trivalent chromium electroplating bath, and (iv) returning the resin-treated portion of the trivalent chromium electroplating bath to the trivalent chromium electroplating bath, with the proviso that - the trivalent chromium electroplating bath provided in step (i) was or is utilized for electrodepositing a chromium layer on at least one substrate applying a cathodic current density of 18 A/dm2 or more, - after step (iii), the iron ions in the resin-treated portion of the trivalent chromium electroplating bath have a lower concentration than in the air-agitated portion of the trivalent chromium electroplating bath, and - after step (iv), the iron ions in the trivalent chromium electroplating bath have a concentration below 50 mg/L, based on the total volume of the trivalent chromium electroplating bath.
The present invention relates to an electroless nickel alloy plating bath comprising nickel ions; further reducible metal ions selected from the group consisting of molybdenum ions, rhenium ions, tungsten ions, copper ions, oxo-ions thereof, and mixtures thereof; at least one reducing agent suitable to reduce the nickel ions and the further reducible metal ions to their respective metallic state; complexing agents CA1, CA2, CA3, and CA4, wherein CA1, CA2, CA3, and CA4 are all different from each other, wherein each of CA1 and CA2 is independently selected from the group consisting of compounds having at least two carboxylic acid moieties, the respective salts thereof as well as mixtures of the aforementioned; wherein CA3 is selected from the group consisting of aliphatic compounds having exactly one carboxylic acid moiety, the respective salts thereof as well as mixtures of the aforementioned; and wherein CA4 is selected from the group consisting of aromatic compounds having at least one carboxylic acid moiety, the respective salts thereof as well as mixtures of the aforementioned.
yyxyxyzz) perpendicular to the central plane (4). Channels (23a, b, 24a, b) are provided through the walls (13a, b), each channel (23a, b, 24a, b) arranged to conduct liquid to a respective one of the apertures (27).
ORGANIC-SOLVENT BASED COATING COMPOSITION FOR COATING A SURFACE OF A METAL SUBSTRATE FOR INCREASING THE COEFFICIENT OF FRICTION OF THE SURFACE OF THE METAL SUBSTRATE
The present disclosure is directed to an organic-solvent based coating composition for coating a surface of a metal substrate for increasing the coefficient of friction of the surface of the metal substrate, the composition comprising (i) at least one organic solvent; (ii) at least one particulate metal provided as metal flakes and having a diameter ranging from 1 pm to 100 µm; (iii) at least one metal carbide at a total concentration ranging from 0.1 wt.-% to 5 wt.-% based on the total weight of the coating composition; and (iv) at least one binding agent.
The present invention refers to a method of preparing a high density interconnect printed circuit board (HDI PCB) or IC substrates including through-holes and/or grate structures filled with copper, which comprises the steps of: a) providing a multi-layer substrate comprising (i) an insulating core layer having a peripheral surface, or (i') a stack assembly comprising an insulating core layer embedded between two electrically conductive interlayers and at least one outer insulating layer attached on the electrically conductive interlayers and having a peripheral surface, (ii) an optional cover layer covering the peripheral surface, and (iii) at least one through-hole extending through all layers of the multilayer substrate; and a grate structure having multiple slots extending through the optional cover laver and partially extending in the insulating core layer or extending through at least the optional cover layer and at least one of the outer insulating layers; b) forming a non-copper conductive layer or a copper layer on the cover layer and on an inner surface of the through-hole, respectively on an inner surface of the grate structure; c) forming a patterned masking film on the non-copper conductive layer or on the copper layer; d) electrodepositing a copper inner-seal inside the through-hole sufficient to form two blind-microvias, respectively electrodepositing a copper inlay on the non-copper conductive layer or on the copper layer of the inner surface of the grate structure and on the remaining peripheral surface of the non-copper conductive layer or of the copper layer, in one step; e) removing the masking film; and f) electrodepositing a copper filling in the blind-microvias, respectively the copper inlay, and on the first copper layer in one step.
H05K 3/10 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
The present invention refers to a method of preparing a high density interconnect printed circuit board (HDI PCB) including microvias filled with copper. The method comprises the steps of: a1) providing a multi-layer substrate comprising (i) a stack assembly of an electrically conductive interlayer embedded between two insulating layers having a peripheral surface, (ii) a cover layer covering the peripheral surface of the multi-layer substrate, and (iii) a microvia extending from the peripheral surface of the multi-layer substrate through the cover layer and ending on the conductive interlayer; b1) depositing a conductive layer on the cover layer and on an inner surface of the microvia; or a2) providing a multi-layer substrate comprising (i) a stack assembly of an electrically conductive interlayer embedded between two insulating layers having a peripheral surface, (ii) a microvia extending from the peripheral surface of the multi-layer substrate and ending on the conductive interlayer; b2) depositing a conductive layer on the peripheral surface of the multi-layer substrate and on an inner surface of the microvia; and c) electrodepositing a copper filling in the microvia and a first copper layer on the conductive layer wherein a thickness of the first copper layer is from 0.1 to 3 µm and wherein the copper filling and the first copper layer form together a planar surface.
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
H05K 3/10 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
d) at least one phosphonate compound according to formula (1)
The invention further is directed to the use of the bath and a method for depositing a gold layer on a surface of a substrate. The bath is particularly suitable in the manufacture of printed circuit boards, IC substrates, semiconducting devices, interposers made of glass and the like.
A device for moving an object comprising at least a substrate (2) through an open side of a processing station (la,b) of a processing apparatus comprises at least one support (26;26'), placeable at the processing station (la,b). The device comprises at least one carrier (27a,b;27'a,b), each guided for movement relative to the support(s) (26;26') along a respective path predominantly directed in parallel to a reference axis (z) in a reference co-ordinate system. The device comprises at least one device (29a,b,30a,b,31a,b;37a,b) for controlling the movement of at least one of the carriers (27a,b;27'a,b) and driving the movement in at least one of opposite directions along the path. The device comprises a component (21;21') for holding the object and a suspension mechanism with which the holding component (21;21') is connected to the at least one carrier (27a,b;27'a,b). The suspension mechanism is arranged to guide movement of the holding component (21;21') relative to the at least one carrier (27a,b;27'a,b) along a holding component (21;21') path. The device (29a,b,30a,b,31a,b;37a,b) is arranged to drive the movement of the holding component (21;21') in at least one direction along the holding component path. The holding component path is predominantly directed in parallel to the reference axis (z).
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
38.
Method for increasing corrosion resistance of a substrate comprising an outermost chromium alloy layer
wherein in step (i) the outermost layer is electrolytically deposited from aqueous, acidic deposition composition, the composition including trivalent chromium ions, at least one organic acid comprising an isothiureido moiety and/or salts thereof, and chloride ions in amount of 0 wt-% to 0.1 wt-%.
The present invention concerns a tin plating bath comprising tin ions; titanium ions as reducing agent suitable to reduce tin ions to metallic tin; and at least one compound selected from the group consisting sulfites, dithionites, thiosulfates, tetrathionates, polythionates, disulfites, sulfides, disulfide, polysulfide, elemental sulfur or mixtures thereof. The present invention further discloses a method of depositing tin or a tin alloy onto a surface of a substrate. The tin plating bath is particularly suitable to be used in the electronics and semiconductor industry.
C23C 18/52 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
40.
Plating compositions for electrolytic copper deposition, its use and a method for electrolytically depositing a copper or copper alloy layer onto at least one surface of a substrate
The present invention relates to a plating composition for electrolytic copper deposition, comprising copper ions, halide ions and at least one acid, at least one benzothiazole compound, at least one phenazine dye and at least one ethanediamine derivative. The present invention further concerns the use of above plating composition and a method for electrolytically depositing a copper or copper alloy layer onto at least one surface of a substrate.
The present invention concerns a metal or metal alloy deposition composition, particularly a copper or copper alloy deposition composition, for electrolytic deposition of a metal or metal alloy layer, particularly for electrolytic deposition of a copper or copper alloy layer, comprising at least one type of metal ions to be deposited, preferably copper ions, and at least one imidazole based plating compound. The present invention further concerns a method for preparation of the plating compound, the plating compound itself and its use in a metal or metal alloy deposition composition. The inventive metal or metal alloy deposition composition can be preferably used for filling recessed structures, in particular those having higher diameter to depth aspect ratios.
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 3/58 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of copper
C08G 73/06 - Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule; Polyhydrazides; Polyamide acids or similar polyimide precursors
C25D 9/02 - Electrolytic coating other than with metals with organic materials
42.
GALVANIC NICKEL OR NICKEL ALLOY ELECTROPLATING BATH FOR DEPOSITING A SEMI-BRIGHT NICKEL OR SEMI-BRIGHT NICKEL ALLOY COATING
11 183118118 234563451181183456383822222333333222222222222222222– OH, and wherein the electroplating bath comprises chloral hydrate, wherein the chloral hydrate has a concentration of less than 0.07 g/l.
The present invention relates to a method for activating a surface of a non-conductive or carbon-fibres containing substrate for metallization, the method comprising the steps (a) providing said substrate, (b) providing an aqueous, palladium-free activation composition comprising (i) a first species of dissolved transition metal ions and additionally metal particles thereof, (ii) one or more than one complexing agent, (iii) permanently or temporarily one or more than one reducing agent, (iv) optionally one or more than one second species of dissolved metal ions being different from the first species, wherein - at least of the first species, the dissolved transition metal ions and the metal particles thereof are present in a reversible equilibrium, with the proviso that - the metal particles are formed from the dissolved transition metal ions through a continuous or semi-continuous reduction through the one or more than one reducing agent, - the dissolved transition metal ions are formed from the metal particles through continuous or semi-continuous oxidation of said particles, and - the dissolved transition metal ions and the metal particles thereof, respectively, are repeatedly involved in said reduction and said oxidation such that no precipitating agglomerates of said metal particles a r e formed, (c) contacting the substrate with said activation composition such that a transition metal or a transition metal alloy is deposited on the surface of said substrate and an activated surface for metallization is obtained.
The present invention relates to a method for activating a surface of a non-conductive or carbon-fibres containing substrate for metallization, the method comprising the steps (a) providing said substrate, (b) providing an aqueous, palladium-free activation composition comprising (i) a first species of dissolved transition metal ions and additionally metal particles thereof, (ii) one or more than one complexing agent, (iii) permanently or temporarily one or more than one reducing agent, (iv) optionally one or more than one second species of dissolved metal ions being different from the first species, wherein - at least of the first species, the dissolved transition metal ions and the metal particles thereof are present in a reversible equilibrium, with the proviso that - the metal particles are formed from the dissolved transition metal ions through a continuous or semi-continuous reduction through the one or more than one reducing agent, - the dissolved transition metal ions are formed from the metal particles through continuous or semi-continuous oxidation of said particles, and - the dissolved transition metal ions and the metal particles thereof, respectively, are repeatedly involved in said reduction and said oxidation such that no precipitating agglomerates of said metal particles a r e formed, (c) contacting the substrate with said activation composition such that a transition metal or a transition metal alloy is deposited on the surface of said substrate and an activated surface for metallization is obtained.
The present invention relates to a method for increasing adhesion strength between a surface of a metal, a metal alloy or a metal oxide and a surface of an organic material comprising as a main step contacting of at least one section of said metal, metal alloy or metal oxide with a specific azole silane compound, a specific azole silane oligomer, or a mixture comprising said compound and/or said oligomer. Furthermore, the present invention relates to a use of said specific azole silane compound, said specific azole silane oligomer, or said mixture in a method for increasing adhesion strength between a surface of a metal, a metal alloy or a metal oxide and a surface of an organic material.
The present invention is related to an aqueous post treatment composition for providing a post treatment layer on at least a part of a passivation layer, which is covering at least a part of a zinc layer being on at least a part of an iron containing substrate, characterized in that the aqueous post treatment composition comprises at least one chromium (III) ion source and at least one compound containing the chemical element silicon; wherein a molar ratio of silicon versus chromium is given in said composition, with the proviso that said molar ratio is ranging from 2600:1 to 1 : 1 for the zinc layer obtained by an electrolytic acid zinc deposition process; or that said molar ratio is ranging from 5200:1 to 1:1 for the zinc layer obtained by an electrolytic alkaline zinc deposition process.
The present invention is related to an aqueous post treatment composition for providing a post treatment layer on at least a part of a passivation layer, which is covering at least a part of a zinc layer being on at least a part of an iron containing substrate, characterized in that the aqueous post treatment composition comprises at least one chromium (III) ion source and at least one compound containing the chemical element silicon; wherein a molar ratio of silicon versus chromium is given in said composition, with the proviso that said molar ratio is ranging from 2600:1 to 1 : 1 for the zinc layer obtained by an electrolytic acid zinc deposition process; or that said molar ratio is ranging from 5200:1 to 1:1 for the zinc layer obtained by an electrolytic alkaline zinc deposition process.
A method for obtaining information about a layer of an organic solderability preservative, OSP, on a printed circuit board, PCB, the method comprising • Providing a PCB (16) having a copper layer (18), wherein a solder resist (19) is placed on the copper layer (18), and the solder resist (19) has openings (21) wherein in the openings (21) a copper surface of the copper layer (18) is covered by a layer of an OSP, • Providing a fluorescence measuring system (10), comprising a radiation source (11), a detection unit (12), and a movement device (24), the method comprising: • a) Obtaining (S2) information about the location of the openings (21) on the PCB (16), • b) Selecting (S3) at least one of the openings (21), • c) Placing (S4) the radiation source (11) at such position that the radiation beam (22) irradiates into the at least one selected opening (21) on the layer of the OSP (20), • d) Detecting (S5) the fluorescent radiation (23) emitted from the OSP (20).
The present invention is related to a membrane anode system for electrolytic zinc-nickel alloy deposition, a method for electrolytic deposition of a zinc- nickel alloy layer on a substrate to be treated using a membrane anode system, and the use of a membrane anode system for acid or alkaline electrolytic deposition of a zinc-nickel alloy layer on a substrate to be treated by such a method.
The present invention is related to a method for electrolytically depositing a zinc-nickel alloy layer on a substrate, wherein the method comprises an interrupting of the execution of the electrolytical deposition of a zinc-nickel alloy layer on the surface of a substrate by terminating applying the current from the external current source to each of the soluble zinc anode(s) and to each of the soluble nickel anode(s); and wherein afterwards at least one soluble zinc anode, which is remaining in the electrolysis reaction container, is electrically connected by an electrical connection element to form an electrical connection to at least one soluble nickel anode, which is remaining in the electrolysis reaction container, for at least a part of the defined period of time in which no current from the external current source is applied to each of the soluble zinc anode(s) and to each of the soluble nickel anode(s).
The present invention is related to a membrane anode system for electrolytic zinc-nickel alloy deposition, a method for electrolytic deposition of a zinc- nickel alloy layer on a substrate to be treated using a membrane anode system, and the use of a membrane anode system for acid or alkaline electrolytic deposition of a zinc-nickel alloy layer on a substrate to be treated by such a method.
An electroless aqueous gold plating bath, comprising at least one source of gold ions and at least one reducing agent for gold ions, characterized in that it comprises at least one ethylenediamine derivative as plating enhancer compound according to formula (I)
An electroless aqueous gold plating bath, comprising at least one source of gold ions and at least one reducing agent for gold ions, characterized in that it comprises at least one ethylenediamine derivative as plating enhancer compound according to formula (I)
An electroless aqueous gold plating bath, comprising at least one source of gold ions and at least one reducing agent for gold ions, characterized in that it comprises at least one ethylenediamine derivative as plating enhancer compound according to formula (I)
wherein the residues R1 and R2 comprise 2 to 12 carbon atoms and are selected from the group consisting of branched alkyl, unbranched alkyl, cycloalkyl or combinations thereof wherein the individual residues R1 and R2 are the same or different and a method of depositing of gold. The electroless aqueous gold plating bath is suitable to provide soft gold layers useful for wire bonding and soldering applications which are required for electronic components.
A method of forming copper oxide on a copper surface, the method comprising the steps a) providing a substrate comprising the copper surface, b) optionally pre-cleaning the copper surface, c) contacting the copper surface with an alkaline aqueous oxidizing solution comprising one or more than one oxidizing compound selected from the group consisting of - an aromatic sulfonic acid compound, salts thereof, - an aromatic sulfonic acid ester compound, salts thereof, - an aromatic nitro compound, and salts thereof, such that said copper oxide is formed on the copper surface.
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
54.
Pyridinium compounds, a synthesis method therefor, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths
The present invention concerns pyridinium compounds, a synthesis method for their preparation, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths.
The plating baths are particularly suitable for use in filling of recessed structures in the electronics and semiconductor industry including dual damascene applications.
C07D 401/12 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings linked by a chain containing hetero atoms as chain links
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 3/58 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of copper
The invention relates to an aqueous alkaline pre-treatment solution for use prior to deposition of a palladium activation layer on a substrate in manufacturing an article with an integrated circuit and a method and use thereof, wherein the solution comprises: - at least one hydroxycarboxylic acid or salt thereof according to the general formula (I) [RCH2-(RCH)n-COO-]m Mm+ (I) wherein n is integer from 2 to 4 and m is 1 or 2, R is independently H or OH with proviso that at least one R is OH, and wherein Mm+ with m: 1 is hydrogen, ammonium or alkali metal; or Mm+ with m: 2 is earth alkali metal, - at least one polyoxyethylene sorbitan fatty acid ester, - at least one sulphonated fatty acid or a salt thereof.
at least one of a dimer of a compound of formula (I) or mixtures thereof
a method for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy with said aqueous bath.
C07D 401/10 - Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing two hetero rings linked by a carbon chain containing aromatic rings
C25D 3/56 - Electroplating; Baths therefor from solutions of alloys
2mm Mm+(I) wherein n is integer from 2 to 4 and m is 1 or 2, R is independently H or OH with proviso that at least one R is OH, and wherein Mm+with m: 1 is hydrogen, ammonium or alkali metal; or Mm+ with m: 2 is earth alkali metal, - at least one polyoxyethylene sorbitan fatty acid ester, - at least one sulphonated fatty acid or a salt thereof.
A method for depositing a chromium or chromium alloy layer on at least one substrate, the method comprising the steps (a) providing an aqueous deposition bath with a pH in the range from 4.1 to 6.9, the bath comprising - trivalent chromium ions, - formate ions, and - optionally sulfate ions, (b) providing the at least one substrate and at least one anode, (c) immersing the at least one substrate in the aqueous deposition bath and applying an electrical current such that the chromium or chromium alloy layer is deposited on the substrate, the substrate being the cathode, wherein, if during or after step (c) the trivalent chromium ions have a concentration below a target concentration of trivalent chromium ions, then (d) adding dissolved trivalent chromium formate to the aqueous deposition bath such that trivalent chromium ions are present in a higher concentration than before step (d), with the proviso that - solid trivalent chromium formate is dissolved in a separated partial volume taken from the aqueous deposition bath to obtain said dissolved trivalent chromium formate for step (d).
An electroless nickel or cobalt plating solution, comprising - nickel ions or cobalt ions, - Ti3+ions as reducing agent for reducing said nickel ions and cobalt ions, - one or more than one complexing agent independently selected from the group consisting of - an organic phosphonic acid compound, its salts and esters, - an organic polyphosphoric acid compound, its salts and esters, and - an inorganic polyphosphoric acid compound, its salts and esters, wherein the molar ratio of the complexing agent to the Ti3+ ions is 1.5 : 1 or higher, and the plating solution does not comprise citric acid, salts thereof, and tin.
C23C 18/34 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals using reducing agents
H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
An end effector for clamping a slab formed substrate (2) having a rim section (5) that is arranged at least approximately and at least partially in a substrate main plane comprises at least a pressing device (10) providing at least a pressing area (11), and at least a support device (20) providing at least a support area (21). The end effector (1) is configured, in a clamped state of the substrate (2), to clamp the substrate (2) at a first surface (3) by a pressing area (11) of a pressing device (10) and at a second surface (4) that is, in regard to the first surface (3), arranged at the opposite side of the substrate (2) by a support area (21) of a support device (20). The end effector comprises a guide (15) for guiding the pressing device (10) relative to the support device (20).
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
An electroless nickel plating solution, comprising - a source of nickel ions, - a source of molybdenum ions, - a source of tungsten ions, - a source of hypophosphite ions - at least one complexing agent, - at least one organic sulphur containing compound in a concentration of 0.38 – 38.00 µmol/L, and - at least one amino acid in a concentration of 0.67 – 40.13 mmol/L, a method for electroless plating of a nickel alloy layer on a substrate, a nickel alloy layer and an article comprising the a nickel alloy layer.
Aqueous acidic copper electroplating bath comprising: copper ions; at least one acid; halide ions; at least one sulfur containing compound selected form the group consisting of sodium 3-mercaptopropylsulfonate, bis(sodiumsulfopropyl)disulfide, 3-(N,N-dimethylthiocarbamoyl)-thiopropanesulfonic acid or the respective sodium salt thereof and mixtures of the aforementioned; at least one amine reaction product of diethylamine with epichlorohydrin or an amine reaction product of isobutyl amine with epichlorohydrin or mixtures of these reaction products; at least one ethylene diamine compound selected from the group having attached EO-PO-block polymers, attached EO-PO-block polymers and sulfosuccinate groups and mixtures thereof; at least one aromatic reaction product of benzylchloride with at least one polyalkylenimine and a method for electrolytically depositing of a copper coating using the electroplating bath.
The present invention relates to a method for electrolytically passivating a surface of silver, silver alloy, gold, or gold alloy, the method comprising the steps of (i) providing a substrate comprising said surface, (ii) providing an aqueous passivation solution comprising - trivalent chromium ions, and - one or more than one species of carboxylic acid residue anions, (iii) contacting the substrate with said passivation solution and passing an electrical current between the substrate as a cathode and an anode such that a passivation layer is electrolytically deposited onto said surface, wherein the trivalent chromium ions with respect to all species of carboxylic acid residue anions form a molar ratio in the range from 1:10 to 1:400.
The present invention refers to a new type of transport roller providing a modified surface to provide improved transport properties for new substrates. Furthermore, it refers to horizontal transport systems beneficially utilizing such transport rollers, especially for providing retaining roller pairs. Additionally, the present invention refers to a treatment device containing such transport roller or horizontal transport system. Furthermore, it refers to a method for treating a substrate and the use of such transport roller.
B65H 5/06 - Feeding articles separated from piles; Feeding articles to machines by rollers
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
H05K 3/06 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
The present invention refers to a substrate holder loading device to be used in a clean room and a clean room treatment device containing such substrate holder loading device. Furthermore, the present invention refers to a method of loading a substrate holder with a first substrate, more preferably with a first and a second substrate.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B65G 47/91 - Devices for picking-up and depositing articles or materials incorporating pneumatic, e.g. suction, grippers
C25D 17/06 - Suspending or supporting devices for articles to be coated
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H02K 7/116 - Structural association with clutches, brakes, gears, pulleys or mechanical starters with gears
H02K 37/24 - Structural association with auxiliary mechanical devices
The present invention relates to a specific azole silane compound, an oligomer thereof, a mixture comprising said compound and/or said oligomer, as well as a respective storage and working solution. Furthermore, the present invention relates to a synthesis method for said specific azole silane compound, and the use of said working solution as a sur- face treatment solution.
The present invention is related to an acidic zinc or zinc-nickel alloy electroplating bath for depositing a zinc or zinc-nickel alloy layer and a method for zinc or zinc-nickel alloy electroplating making use of such an electroplating bath. The bath comprises a triazole derivative and a polyethylene glycol derivative.
The present invention is related to an acidic zinc or zinc-nickel alloy electroplating bath for depositing a zinc or zinc-nickel alloy layer and a method for zinc or zinc-nickel alloy electroplating making use of such an electroplating bath. The bath comprises a triazole derivative and a polyethylene glycol derivative.
An electroless copper plating bath for depositing a copper or copper alloy layer on a surface of a substrate, comprising a) copper ions; b) at least one reducing agent suitable for reducing copper ions to metallic copper; c) at least one complexing agent for copper ions; characterized in that the electroless copper plating bath further comprises d) at least one compound according to formula (1) wherein Z1 and Z2 are independently selected from the group consisting of hydrogen; carboxylic acid group; carboxylate group; sulfonic acid group; sulfonate group; carboxamide group; nitrile group; nitro group; substituted or non-substituted trialkylammonium group; substituted or non-substituted 2-carboxyvinyl group; substituted or non-substituted 2-vinylcarboxylate group; substituted or non-substituted 2-(trialkylammonium)vinyl group; substituted or non-substituted hydroxamic acid group; and substituted or non-substituted oxime group; with the proviso that at least one of Z1and Z2is not hydrogen; and wherein R1, R2, R3and R4are defined as follows: i. R1, R2, R3and R4are hydrogen; or ii. R1with R2are forming together a substituted or non-substituted aromatic ring moiety, R3and R4are hydrogen; or iii. R3with R4are forming together a substituted or non-substituted aromatic ring moiety, R1and R2are hydrogen; or 25 iv. R1 with R2 as well as R3with R4 are forming together a substituted or non- substituted aromatic ring moiety, respectively. The invention further concerns a method for depositing at least a copper or copper alloy layer on a surface of a substrate, a layer system and a kit-of-parts for providing the inventive electroless copper plating bath.
The present invention refers to aqueous composition for depositing a tin silver alloy, the composition comprising (a) tin ions, (b) silver ions, (c) at least one first compound independently selected from the group consisting of unsubstituted bis(aminophenyl)disulfides, substituted bis(aminophenyl)disulfides, unsubstituted dipyridyldisulfides, and substituted dipyridyldisulfides, (d) at least one second compound of formula (II), and salts thereof, wherein independently X denotes a C1 to C10 alkyl moiety comprising one or more than one sulfhydryl group, R1denotes hydrogen, methyl, ethyl, linear C3 to C5 alkyl, branched C3 to C5 alkyl, unsubstituted phenyl, substituted phenyl, unsubstituted benzyl, or substituted benzyl, and R2 denotes methyl, ethyl, linear C3 to C5 alkyl, branched C3 to C5 alkyl, unsubstituted phenyl, substituted phenyl, unsubstituted benzyl, or substituted benzyl.
To achieve anti-fingerprint properties to decorative surfaces, a novel method for coating a metal substrate with an anti-fingerprint coating is provided. The method comprises the following method steps: (a) providing the metal substrate; (b) providing a silicone coating mixture containing: (i) at least one first silicone compound selected from the group consisting of mono- or oligo(aminoalkyl)-fluoroalkyl silicones; (ii) at least one second silicone compound selected from the group consisting of aminoalkyl silicones; (iii) at least one acidifier; and (iv) water; further (c) treating the metal substrate with the silicone coating mixture by bringing the metal substrate into contact with the silicone coating mixture; and (d) curing the treated metal substrate at a predetermined temperature.
C23C 18/12 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
C08G 77/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
74.
Method for electrolytically passivating an outermost chromium or outermost chromium alloy layer to increase corrosion resistance thereof
with the proviso that during or after the chemical reducing the one or more than one organic acid residue anion is present for the first time in the passivation solution.
The present invention concerns a tin plating bath comprising tin ions; at least one complexing agent selected from the group consisting of pyrophosphate ions, linear polyphosphate ions and cyclic polyphosphate ions and a nitrogen and sulfur containing stabilizing additive and titanium (III) ions as a reducing agent suitable to reduce tin ions to metallic tin. The present invention further discloses a method of depositing tin or a tin alloy onto a surface of a substrate. The tin plating bath is particularly suitable to be used in the electronics and semiconductor industry.
B22F 7/00 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting
C25D 3/32 - Electroplating; Baths therefor from solutions of tin characterised by the organic bath constituents used
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/52 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups
C09D 5/00 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
C09D 5/10 - Anti-corrosive paints containing metal dust
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
C23C 18/00 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
76.
Method of forming a solderable solder deposit on a contact pad
A method of forming a solderable solder deposit on a contact pad, comprising the steps of providing an organic, non-conductive substrate which exposes said contact pad under an opening of a first non-conductive resist layer, depositing a conductive layer inside and outside the opening such that an activated surface results, thereby forming an activated opening, electrolytically depositing nickel or nickel alloy into the activated opening such that nickel/nickel alloy is deposited onto the activated surface, electrolytically depositing tin or tin alloy onto the nickel/nickel alloy, with the proviso that the electrolytic deposition of later steps results in an entirely filled activated opening, wherein the entirely filled activated opening is completely filled with said nickel/nickel alloy, or in the entirely filled activated opening the total volume of nickel/nickel alloy is higher than the total volume of tin and tin alloy, based on the total volume of the entirely filled activated opening.
C25D 5/54 - Electroplating of non-metallic surfaces
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
C25D 7/00 - Electroplating characterised by the article coated
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
H05K 3/10 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
The present invention relates to a method for increasing adhesion strength between a surface of copper or copper alloy and an organic layer, the method comprising in this order the steps: (i) providing a non-conductive substrate comprising on at least one side said surface, said surface having a total surface area of copper or copper alloy, (ii) contacting said substrate comprising said surface with an acidic aqueous non- etching protector solution comprising (ii-a) one or more than one amino azole, (ii-b) one or more than one organic acid and/or salts thereof, (ii-c) one or more than one peroxide in a total amount of 0.4 wt-% or less, based on the total weight of the protector solution, and (ii-d) inorganic acids in a total amount of 0 to 0.01 wt-%, based on the total weight of the protector solution, wherein during step (ii) the total surface area of said surface is not increased upon contacting with the protector solution.
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
C23F 11/08 - Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
The present invention concerns a new nickel comprising layer array preferably having a reduced nickel ion release and a method for its manufacture. Further, it relates to the use of the layer array as decorative coating on a surface of the substrate. The use of the new layer array reduces the risk of nickel caused dermatitis due to lower release of nickel ions compared to conventional decorative coatings.
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
79.
Wafer-like substrate processing method and apparatus
The present invention refers to a method for processing a wafer like substrate using a touching gripper and a touchless gripper. Furthermore, the present invention refers to an apparatus for processing a wafer-like substrate containing a touching gripper and a touchless gripper. Additionally, the present invention refers to the use of an inventive apparatus to process a wafer-like substrate.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
C25F 1/00 - Electrolytic cleaning, degreasing, pickling, or descaling
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
80.
Non-aqueous stripping composition and a method of stripping an organic coating from a substrate
30 hydrocarbon group, wherein the high-boiling solvent has a boiling point of at least 100° C.; B—at least one high-boiling co-solvent selected from the group, consisting of high-boiling glycols, glycol ethers and amine compounds, wherein the high-boiling co-solvent has a boiling point of at least 100° C.; and C—at least one pH-active agent either selected from the group, consisting of acid compounds or selected from the group, consisting of hydroxide compounds.
Device for vertical galvanic metal deposition on a substrate comprising a first and a second device, arranged vertically parallel to each other; the first device comprising a first anode having a plurality of through-going conduits and a first carrier having a plurality of through-going conduits; wherein said first anode and said first carrier are connected to each other; wherein the second device comprises a first substrate holder adapted to receive a first substrate to be treated, wherein said first substrate holder at least partially surrounds the first substrate along its outer frame, wherein the first device further comprises a plurality of plugs, each plug comprising a through-going channel, each plug arranged such that it runs from the backside of the first carrier through a through-going conduit of the first carrier and further through the conduit of the first anode element, and the plugs are detachably connected to the first device.
A method for manufacturing a printed circuit board, comprising in order steps (i) providing a non-conductive substrate having on a surface copper circuitry with a copper surface, wherein said surface is chemically treated by (a) oxidation and subsequent reduction reaction and/or (b) organic compound attached to said surface, a permanent, non-conductive, not fully polymerized cover layer covering at least partially said surface, (ii) thermally treating the substrate with the cover layer at temperature from 140° C. to 250° C. in atmosphere containing molecular oxygen at 100000 ppm or less, based on the total volume of the atmosphere, wherein a substrate with a permanent, non-conductive cover layer is obtained, with the provisos that (ii) is after (i) but before any metal or metal alloy is deposited onto the cover layer, and that in (ii) the cover layer is fully polymerized in one thermal treating step, if the cover layer is a solder mask.
The present invention is to provide a chrome-plated part having a corrosion resistance in normal and specific circumstances and not requiring additional treatments after chrome plating, and to provide a manufacturing method of such a chrome-plated part.
a and having at least any one of a microporous structure and a microcrack structure.
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C25D 5/00 - Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
C25D 3/06 - Electroplating; Baths therefor from solutions of chromium from solutions of trivalent chromium
C25D 3/12 - Electroplating; Baths therefor from solutions of nickel or cobalt
84.
Method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor
The present invention relates to a method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor, the use of an acidic palladium plating bath (as defined below) for directly depositing metallic palladium or a palladium alloy onto a non-activated surface of a doped or non-doped gallium nitride semiconductor, and a palladium or palladium alloy coated, doped or non-doped gallium nitride semiconductor.
C23C 18/44 - Coating with noble metals using reducing agents
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
The present invention concerns an electroless gold plating bath comprising a) gold ions; b) sulfite ions; c) iodide ions; d) at least one phosphonate compound according to form ula ( 1 ) wherein each X is independently an alkanediyl group; R1, R2, R3and each R4 are independently alkanediyl groups;M is independently hydrogen, a metal atom or a cation form ing radical; each n is a rational number and selected in accordance with the valency of the respective M; and b is an integer ranging from 1 to 1 0.The invention further is directed to the use of the bath and a method for depositing a gold layer on a surface of a substrate. The bath is particularly suitable in the manufacture of printed circuit boards, I C substrates, semiconducting devices, interposers made of glass and t he like.
The present invention concerns a metal or metal alloy deposition composition, particularly a copper or copper alloy deposition composition, for electrolytic deposition of a metal or metal alloy layer, particularly for electrolytic deposition of a copper or copper alloy layer, comprising at least one type of metal ions to be deposited, preferably copper ions, and at least one imidazole based plating compound. The present invention further concerns a method for preparation of the plating compound, the plating compound itself and its use in a metal or metal alloy deposition composition. The inventive metal or metal alloy deposition composition can be preferably used for filling recessed structures, in particular those having higher diameter to depth aspect ratios.
C08G 65/26 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring from cyclic ethers and other compounds
C08G 65/333 - Polymers modified by chemical after-treatment with organic compounds containing nitrogen
C25D 3/12 - Electroplating; Baths therefor from solutions of nickel or cobalt
C25D 3/22 - Electroplating; Baths therefor from solutions of zinc
C25D 3/32 - Electroplating; Baths therefor from solutions of tin characterised by the organic bath constituents used
C25D 3/46 - Electroplating; Baths therefor from solutions of silver
C25D 3/48 - Electroplating; Baths therefor from solutions of gold
C25D 3/52 - Electroplating; Baths therefor from solutions of platinum group metals characterised by the organic bath constituents used
C25D 3/56 - Electroplating; Baths therefor from solutions of alloys
C25D 3/60 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of tin
C25D 3/62 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of gold
C25D 3/64 - Electroplating; Baths therefor from solutions of alloys containing more than 50% by weight of silver
87.
UREYLENE ADDITIVE, ITS USE AND A PREPARATION METHOD THEREFOR
The present invention relates to ureylene additives, a method for their preparation, a use of said ureylene additives favorably as additive in metal or metal alloy deposition composition, preferably in a copper or copper alloy deposition composition, more preferably as leveler and/or suppressor therein, metal or metal alloy deposition composition comprising said ureylene additive and the use of such composition, a method for electrolyticaliy depositing a metal or metal alloy layer, preferably a copper or copper alloy layer, onto at least one surface of a substrate and metal or metal alloy layers formed from above metal or metal alloy deposition composition. The ureylene additives allow for example in the case of copper plating for very levelled copper deposits without voids, in particular when filling recesses.
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C07C 275/14 - Derivatives of urea, i.e. compounds containing any of the groups the nitrogen atoms not being part of nitro or nitroso groups having nitrogen atoms of urea groups bound to acyclic carbon atoms of an acyclic and saturated carbon skeleton being further substituted by nitrogen atoms not being part of nitro or nitroso groups
C07C 211/13 - Amines containing three or more amino groups bound to the carbon skeleton
C07C 215/18 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being saturated and acyclic with hydroxy groups and at least two amino groups bound to the carbon skeleton
C07C 215/50 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups bound to carbon atoms of at least one six-membered aromatic ring and amino groups bound to acyclic carbon atoms or to carbon atoms of rings other than six-membered aromatic rings of the same carbon skeleton with amino groups linked to the six-membered aromatic ring, or to the condensed ring system containing that ring, by carbon chains not further substituted by hydroxy groups with amino groups and the six-membered aromatic ring, or the condensed ring system containing that ring, bound to the same carbon atom of the carbon chain
C07C 217/42 - Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having etherified hydroxy groups and at least two amino groups bound to the carbon skeleton
C08G 18/28 - Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
(ii) one or more than one compound of Formula (Ia)
with the definitions given below, the use of the acidic aqueous composition according to the invention for electrolytic copper plating, the use of the compound of Formula (Ia) in an acidic aqueous composition for electrolytic metal plating, a method of electrolytic copper plating using the acidic aqueous composition according to the invention, and specific compounds derived from Formula (Ia) for an acidic aqueous composition for electrolytic metal plating.
A method for post-treatment of a chromium finish surface to improve corrosion resistance comprising a) providing a substrate having a chromium finish surface, and at least one intermediate layer between the chromium finish surface and the substrate, selected from the group consisting of nickel, nickel alloys, copper and copper alloys, wherein the chromium finish surface is a surface of a trivalent chromium plated layer, obtained by electroplating the substrate, having the at least one intermediate layer, in a plating bath, the plating bath comprising chromium (III) ions; b) contacting the chromium finish surface with an aqueous solution, comprising a permanganate, at least one compound which is selected from a phosphorus-oxygen compound, a hydroxide, a nitrate, a borate, boric acid, a silicate, or a mixture of two or more of these compounds; c) forming a transparent corrosion protection layer onto the chromium finish surface during step b.
C25D 9/06 - Electrolytic coating other than with metals with inorganic materials by anodic processes
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
90.
A METHOD FOR INCREASING CORROSION RESISTANCE OF A SUBSTRATE COMPRISING AN OUTERMOST CHROMIUM ALLOY LAYER
The present invention relates to a method for increasing corrosion resistance of a substrate comprising an outermost chromium alloy layer, the method comprising the steps of (i) providing a substrate comprising said outermost layer, the layer - having a color space defined by CIELAB with a lightness L* of 79 or more, - comprising oxygen and carbon, and - comprising iron in a total amount of 0 atom-% to 1 atom-%, based on the total number of atoms in said outermost layer, (ii) providing an aqueous, acidic passivation solution, the solution comprising - trivalent chromium ions, - phosphate ions, - one or more than one organic acid residue anion, (iii) contacting the substrate with the passivation solution and passing an electrical current between the substrate as a cathode and an anode in the passivation solution such that a passivation layer is deposited onto the outermost layer, wherein in step (i) the outermost chromium alloy layer is electrolytically deposited from an aqueous, acidic deposition composition, the composition comprising - trivalent chromium ions, - at least one organic acid comprising an isothiureido moiety and/or salts thereof, and - chloride ions in a total amount of 0 wt-% to 0.1 wt-%, based on the total weight of the deposition composition.
C25D 3/06 - Electroplating; Baths therefor from solutions of chromium from solutions of trivalent chromium
C25D 9/08 - Electrolytic coating other than with metals with inorganic materials by cathodic processes
C25D 5/14 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
91.
A METHOD AND TREATMENT COMPOSITION FOR SELECTIVE REMOVAL OF PALLADIUM
The present invention relates to a method for selective removal of palladium from a surface of a substrate having at least one structured surface with conductive features thereon made of one or more metal or metal alloys which are not palladium and at least one outer layer of palladium layer or parts thereof comprising the following method steps to be carried out in the given order (1) providing said substrate; and i. (2) treating said substrate with a treatment composition comprising at least one solvent; at least one hydroxycarboxylic acid or a salt thereof; and at least one sulfur compound selected from compounds represented by formula (I) compounds represented by formula (II) and mixtures of the aforementioned wherein the concentration of the at least one sulfur compound is at least 0.06 mol/L. The invention further concerns a treatment composition for selective removal of palladium from a surface of a substrate and its use.
C25D 5/02 - Electroplating of selected surface areas
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
C23F 1/44 - Compositions for etching metallic material from a metallic material substrate of different composition
C23F 1/30 - Acidic compositions for etching other metallic material
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
H05K 3/26 - Cleaning or polishing of the conductive pattern
H05K 3/10 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
C23C 18/18 - Pretreatment of the material to be coated
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C25D 5/48 - After-treatment of electroplated surfaces
C23C 18/20 - Pretreatment of the material to be coated of organic surfaces, e.g. resins
C23C 18/40 - Coating with copper using reducing agents
92.
Lead-frame structure, lead-frame, surface mount electronic device and methods of producing same
A lead-frame structure having two faces and exposing a treated silver surface on at least one of said two faces, the treated silver surface(s) serving the wire bonding, which lead-frame structure has a surface which, after applying resin to it, has excellent adhesion even under severe testing conditions, such as the IPC/JEDEC J-STD-20 MSL standard, and a surface mount electronic device comprising a lead-frame or lead-frame entity and at least one semiconductor device mounted thereon, wherein the lead-frame or lead-frame entity exposes a treated silver surface on at least one of the two faces thereof, wherein the treated silver surface(s) serve(s) the wire bonding, and wherein a resin is applied to the lead-frame or lead-frame entity, and which surface mount electronic device has excellent adhesion of the surface of the lead-frame or lead-frame entity even under severe testing conditions.
C25D 3/46 - Electroplating; Baths therefor from solutions of silver
C25D 5/02 - Electroplating of selected surface areas
C25D 5/48 - After-treatment of electroplated surfaces
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
C25D 5/34 - Pretreatment of metallic surfaces to be electroplated
C23C 18/54 - Contact plating, i.e. electroless electrochemical plating
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
C23C 18/18 - Pretreatment of the material to be coated
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
93.
Process for depositing a metal or metal alloy on a surface of a substrate including its activation
A process for depositing metal or metal alloy on a substrate including treating the substrate surface with an activation solution comprising a source of metal ions so the metal ions are adsorbed on the substrate surface, treating the obtained substrate surface with a treatment solution containing an additive selected from thiols, thioethers, disulphides and sulphur containing heterocycles, and a reducing agent suitable to reduce the metal ions adsorbed on the substrate surface selected from boron based reducing agents, hypophosphite ions, hydrazine and hydrazine derivatives, ascorbic acid, iso-ascorbic acid, sources of formaldehyde, glyoxylic acid, sources of glyoxylic acid, glycolic acid, formic acid, sugars, and salts of aforementioned acids; and subsequently treating the substrate surface with a metallizing solution comprising a source of metal ions to be deposited such that a metal or metal alloy is deposited thereon.
C23C 18/20 - Pretreatment of the material to be coated of organic surfaces, e.g. resins
C23C 18/24 - Roughening, e.g. by etching using acid aqueous solutions
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
H05K 3/12 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using printing techniques to apply the conductive material
94.
Composition and process for metallizing nonconductive plastic surfaces
The present invention relates to a process for metallizing electrically nonconductive plastic surfaces of articles using the etching solution. The etching solution is based on a stabilized acidic permanganate solution. After the treatment with the etching solution, the articles can be metallized.
C25D 5/54 - Electroplating of non-metallic surfaces
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
95.
PLATING COMPOSITIONS FOR ELECTROLYTIC COPPER DEPOSITION, ITS USE AND A METHOD FOR ELECTROLYTICALLY DEPOSITING A COPPER OR COPPER ALLOY LAYER ONTO AT LEAST ONE SURFACE OF A SUBSTRATE
The present invention relates to a plating composition for electrolytic copper deposition, comprising copper ions, halide ions and at least one acid, at least one benzothiazole compound, at least one phenanzine dye and at least one ethanediamine derivative. The present invention further concerns the use of above plating composition and a method for electrolytically depositing a copper or cop- per alloy layer onto at least one surface of a substrate.
The present invention relates to imidazoyl urea polymers and their use in aqueous acidic plating baths for metal or metal alloy deposition such as electrolytic deposition of copper or alloys thereof in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of metal ions and an imidazoyl urea polymer. The plating bath is particularly useful for filling recessed structures and build-up of pillar bump structures.
C25D 3/38 - Electroplating; Baths therefor from solutions of copper
C07C 275/22 - Derivatives of urea, i.e. compounds containing any of the groups the nitrogen atoms not being part of nitro or nitroso groups having nitrogen atoms of urea groups bound to acyclic carbon atoms of an unsaturated carbon skeleton containing rings other than six-membered aromatic rings
C07D 233/61 - Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, attached to ring carbon atoms with hydrocarbon radicals, substituted by nitrogen atoms not forming part of a nitro radical, attached to ring nitrogen atoms
97.
METHOD FOR ELECTROLYTICALLY DEPOSITING A ZINC-NICKEL ALLOY LAYER ON AT LEAST A SUBSTRATE TO BE TREATED
The present invention is related to a method for electrolytically depositing a zinc-nickel alloy layer on a substrate, wherein the method comprises an interrupting of the execution of the electrolytical deposition of a zinc-nickel alloy layer on the surface of a substrate by terminating applying the current from the external current source to each of the soluble zinc anode(s) and to each of the soluble nickel anode(s); and wherein afterwards at least one soluble zinc anode, which is remaining in the electrolysis reaction container, is electrically connected by an electrical connection element to form an electrical connection to at least one soluble nickel anode, which is remaining in the electrolysis reaction container, for at least a part of the defined period of time in which no current from the external current source is applied to each of the soluble zinc anode(s) and to each of the soluble nickel anode(s).
The present invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the present invention comprises a source for palladium ions, a reducing agent for palladium ions and an aromatic compound. The aqueous plating bath composition has an increased deposition rate for palladium while maintaining bath stability. The aqueous plating bath composition has also a prolonged life time. The aromatic compounds of the present invention allow for adjusting the deposition rate to a constant range over the bath life time and for electrolessly depositing palladium layers at lower temperatures. The aromatic compounds of the present invention activate electroless palladium plating baths having a low deposition rate and reactivate aged electroless palladium plating baths.
C23C 18/44 - Coating with noble metals using reducing agents
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
99.
A BATH AND METHOD FOR FILLING A VERTICAL INTERCONNECT ACCESS OR TRENCH OF A WORK PIECE WITH NICKEL OR A NICKEL ALLOY
1222n33 - group, wherein n is an integer in the range of 1-6, and wherein one or more of the hydrogens in the group may be replaced by a substituent, preferably hydroxide; and a method for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy with said aqueous bath.
A method of producing a lead-frame structure having two faces and exposing a treated silver surface on at least one of the two faces, the treated silver surface(s) serving the wire bonding, which yields a surface which, after applying resin to it, has excellent adhesion even under severe testing conditions, such as the IPC/JEDEC J-STD-20 MSL standard, and a method of producing a surface mount electronic device including a lead-frame or lead-frame entity and at least one semiconductor device mounted thereon, wherein the lead-frame or lead-frame entity exposes a treated silver surface on at least one of the two faces, wherein the treated silver surface(s) serve(s) the wire bonding, and wherein a resin is applied to the lead-frame or lead-frame entity, which method yields excellent adhesion of the surface of the lead-frame or lead-frame entity even under severe testing conditions.
C25D 3/46 - Electroplating; Baths therefor from solutions of silver
C25D 5/02 - Electroplating of selected surface areas
C25D 5/48 - After-treatment of electroplated surfaces
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
C25D 5/34 - Pretreatment of metallic surfaces to be electroplated
C23C 18/54 - Contact plating, i.e. electroless electrochemical plating
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
C23C 18/18 - Pretreatment of the material to be coated
H01L 23/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details of semiconductor or other solid state devices
