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Found results for
patents
1.
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METHOD TO SELECTIVELY GROW PHASE CHANGE MATERIAL INSIDE A VIA HOLE
Application Number |
US2012033708 |
Publication Number |
2012/166255 |
Status |
In Force |
Filing Date |
2012-04-15 |
Publication Date |
2012-12-06 |
Owner |
- INTERNATIONAL BUSINESS MACHINES CORPORATION (USA)
- Macronix International Co., Ltd. (Taiwan, Province of China)
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Inventor |
- Chen, Chieh-Fang
- Lam, Chung H.
- Schrott, Alejandro G.
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Abstract
An example embodiment is a method for filling a via hole with phase change material. The method steps include forming a bottom electrode in a substrate, depositing a dielectric layer above the bottom electrode, and forming a via hole within the dielectric layer down to a top surface of the bottom electrode. The substrate is heated to a reaction temperature and a first phase change material precursor is deposited within the via hole. The first precursor is configured to decompose on the top surface of the bottom electrode and chemisorb on a top surface of the dielectric layer at the reaction temperature. A second precursor is deposited within the via hole after the first precursor at least partially decomposes on the top surface of the bottom electrode.
IPC Classes ?
- G11C 11/14 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
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2.
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ONE-MASK PHASE CHANGE MEMORY PROCESS INTEGRATION
Application Number |
EP2011061752 |
Publication Number |
2012/019843 |
Status |
In Force |
Filing Date |
2011-07-11 |
Publication Date |
2012-02-16 |
Owner |
- INTERNATIONAL BUSINESS MACHINES CORPORATION (USA)
- MACRONIX INTERNATIONAL CO. LTD. (Taiwan, Province of China)
- IBM UNITED KINGDOM LIMITED (United Kingdom)
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Inventor |
- Breitwisch, Matthew, Joseph
- Lam, Chung, Hon
- Lung, Hasiang-Lan
- Joseph, Eric, Andrew
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Abstract
An example embodiment disclosed is a method for fabricating a phase change memory cell. The method includes forming a non-sublithographic via within an insulating substrate. The insulating substrate is embedded on the same layer as a first metalization layer (Metal 1) of a semiconductor wafer, and includes a bottom and a sidewall. A sublithographic aperture is formed through the bottom of the non-sublithographic via and extends to a buried conductive material. The sublithographic aperture is filled with a conductive non-phase change material. Furthermore, phase change material is deposited within the non-sublithographic via.
IPC Classes ?
- H01L 45/00 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
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3.
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SINGLE CRYSTAL PHASE CHANGE MATERIAL
Application Number |
US2010055200 |
Publication Number |
2011/059859 |
Status |
In Force |
Filing Date |
2010-11-03 |
Publication Date |
2011-05-19 |
Owner |
- INTERNATIONAL BUSINESS MACHINES CORP. (USA)
- MACRONIX INTERNATIONAL CO., LTD. (Taiwan, Province of China)
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Inventor |
- Lam, Chung Hon
- Schrott, Alejandro G.
- Chen, Chieh-Fang
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Abstract
A method for fabricating a phase change memory (PCM) cell includes forming a dielectric layer over an electrode, the electrode comprising an electrode material; forming a via hole in the dielectric layer such that the via hole extends down to the electrode; and growing a single crystal of a phase change material on the electrode in the via hole. A phase change memory (PCM) cell includes an electrode comprising an electrode material; a dielectric layer over the electrode; a via hole in the dielectric layer; and a single crystal of a phase change material located in the via hole, the single crystal contacting the electrode at the bottom of the via hole.
IPC Classes ?
- B05D 5/00 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
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