A stacked die XBAR filter device (600) includes a first die (630) containing one or more XBARs on a first surface, a second die (640) containing one or more XBARs on a second surface, and one or more conductive vias (V1IN, V1OUT) through either the first die or the second die, where the first die is connected to the second die with the first surface facing the second surface.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
2.
TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH MULTIPLE DIAPHRAGM THICKNESSES AND FABRICATION METHOD
Methods of fabricating filter devices are disclosed. A back surface of a piezoelectric plate having a first thickness is attached to a substrate. The front surface of the piezoelectric plate is selectively etched to thin a portion of the piezoelectric plate from the first thickness to a second thickness less than the first thickness. Cavities are formed in the substrate such that portions of the piezoelectric plate form a plurality of diaphragms spanning respective cavities. A conductor pattern is formed on the front surface. The conductor pattern includes a first interdigital transducer (IDT) with interleaved fingers on a first diaphragm having the first thickness and a second IDT with interleaved fingers on a second diaphragm having the second thickness.
A process for fabricating a transversely-excited film bulk acoustic resonator (XBAR) and that XBAR are described. A sacrificial pillar is formed on a surface of a piezoelectric wafer and a highly conforming dielectric layer is deposited on the piezoelectric wafer to bury the sacrificial pillar. The highly conforming dielectric layer is polished to form a planar surface and to leave a thickness of the highly conforming dielectric that covers the sacrificial pillar. The planar surface of the highly conforming dielectric layer is bonded to a surface of a substrate wafer. A conductor pattern is formed on a front surface of the piezoelectric plate and holes are formed through the piezoelectric wafer to the sacrificial pillar. The sacrificial pillar is removed using an etchant introduced through the holes in the piezoelectric wafer to form a cavity under a diaphragm of the piezoelectric wafer spanning the cavity.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
An acoustic wave device includes a piezoelectric layer and first and second resonators. The first resonator includes a first functional electrode and a first dielectric film on the piezoelectric layer. The second resonator includes a second functional electrode and a second dielectric film on the piezoelectric layer. The first and second resonators use a thickness resonance mode. The piezoelectric layer includes first and second resonator portions respectively including portions of the first and second resonators. A resonant frequency of the first resonator is lower than that of the second resonator, and a thickness of the first resonator portion is greater than that of the second resonator portion, and ts1/tp1 ≤ ts2/tp2 is satisfied, where tp1, tp2, ts1, and ts2 are respectively thicknesses of the first and second resonator portions and the first and second dielectric films.
An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on a diaphragm of the plate that is formed over a cavity in the substrate. The piezoelectric plate and the BOX layer are removed from a least a portion of the surface area of the substrate to provide lower thermal resistance between the IDT and the substrate.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
An acoustic resonator device is formed using sacrificial polysilicon pillar by forming a polysilicon pillar on a substrate and depositing a dielectric layer to bury the polysilicon pillar and planarizing the surface of the dielectric layer. A piezoelectric plate is bonded to the planarized surface of the dielectric layer and thinned to a target piezoelectric membrane thickness. At least one conductor pattern is formed on the thinned piezoelectric plate and the polysilicon pillar is then removed using an etchant introduced through holes in the piezoelectric plate to form an air cavity where the pillar was removed
Acoustic resonator devices, filters, and methods. An acoustic resonator includes a substrate and a piezoelectric plate, a portion of the piezoelectric plate being a diaphragm spanning a cavity in the substrate. A conductor pattern on a front surface of the piezoelectric plate includes concentric interleaved interdigital transducer (IDT) fingers connected alternately to first and second busbars. The IDT fingers are on the diaphragm.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03B 5/32 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
There are disclosed matrix filters having an input port and sub-filters connected between the input port and respective output ports. Each of the sub-filters includes a ladder circuit with n transversely-excited film bulk acoustic resonator (XBAR) series elements and n-1 capacitor shunt elements, where n, the order of the sub-filter, is an integer greater than 2. The sub-filters having noncontiguous passbands.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
H03H 7/12 - Bandpass or bandstop filters with adjustable bandwidth and fixed centre frequency
H03H 9/42 - Time-delay networks using surface acoustic waves
There are disclosed matrix filters having an input port and sub-filters connected between the input port and respective output ports. Each of the sub-filters includes a ladder circuit with n transversely-excited film bulk acoustic resonator (XBAR) series elements and n-1 capacitor shunt elements, where n, the order of the sub-filter, is an integer greater than 2. Each sub-filter further has a first switch in parallel with a first capacitor shunt element and a second switch in parallel with a last capacitor shunt element.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
H03H 7/12 - Bandpass or bandstop filters with adjustable bandwidth and fixed centre frequency
H03H 9/42 - Time-delay networks using surface acoustic waves
A 5 GHz Wi-Fi bandpass filter includes a ladder filter circuit with two or more shunt transversely-excited film bulk acoustic resonators (XBARs) and two or more series XBARs. Each of the two or more shunt XBARS includes a diaphragm having an LN-equivalent thickness greater than or equal to 360 nm, and each of the two or more series XBARS includes a diaphragm having an LN-equivalent thickness less than or equal to 375 nm.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 3/04 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
Diplexers, filter devices, and methods are disclosed. A diplexer includes a first chip comprising series resonators of a high band filter, a second chip comprising shunt resonators of the high band filter and series resonators of a low band filters, and a third chip comprising shunt resonators of the low band filter. The series resonators and the shunt resonators of the high band filter are decoupled transversely-excited film bulk acoustic resonators (DXBARs). The series resonators and the shunt resonators of the low band filter are transversely-excited film bulk acoustic resonators (XBARs).
H04B 1/38 - Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
A 6 GHz Wi-Fi bandpass filter includes a ladder filter circuit with two or more shunt transversely-excited film bulk acoustic resonators (XBARs) and two or more series XBARs. Each of the two or more shunt XBARS includes a diaphragm having an LN-equivalent thickness greater than or equal to 310 nm, and each of the two or more series XBARS includes a diaphragm having an LN-equivalent thickness less than or equal to 305 nm.
Tiled filters are disclosed. A filter includes an n x m array of sub-filters, where n is a number of sub-filters in parallel and m is a number of sub-filters in series. n and m are non-zero positive integers and at least one of n and m is greater than one. All of the nm sub-filters are bandpass filters with substantially the same passbands.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 9/205 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
14.
TRANSVERSELY-EXCITED ACOUSTIC RESONATORS WITH BUSBAR SIDE EDGES THAT FORM ANGLES
An acoustic resonator has a piezoelectric plate attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) formed on the plate has interleaved fingers on the diaphragm with first parallel fingers extending from a first busbar and second parallel fingers extending from a second busbar of the IDT. The first and second busbars of the IDT terminate in beveled corners that extend off of the diaphragm as side edges of the busbars that form angles with a perimeter of the cavity.
An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, and an interdigital transducer electrode. A ratio d / p is less than or equal to about 0.5, where d is a thickness of the piezoelectric layer and p is a distance between centers of adjacent electrode fingers of the multiple electrode fingers. The interdigital transducer electrode includes an intersection region in which the adjacent electrode fingers overlap when viewed in a direction in which the multiple electrode fingers face each other; two gap regions, each of the two gap regions is located between the intersection region and a corresponding one of the two busbars and includes an I-B gap defined as a dimension in a direction in which the multiple electrode fingers extend; and the I-B gap of at least one of the two gap regions is less than or equal to about 1.1p.
An acoustic wave device includes a support substrate; a piezoelectric layer on the support substrate; a first electrode and a second electrode on the piezoelectric layer in a lamination direction of the support substrate and the piezoelectric layer, the first and the second electrodes are opposed in a first direction that intersects with the lamination direction; and a space defining either a cavity in a portion of the support substrate or an air gap between the support substrate and the piezoelectric layer. At least a portion of each of the first and the second electrodes overlaps the space in plan view in the lamination direction, and a first roughness of a major surface of the support substrate, opposite from the piezoelectric layer, is greater than a second roughness of a major surface of the piezoelectric layer on which the first and second electrodes are located.
An acoustic wave device includes a cavity in a substate, an overlapping region in which portions of adjacent first and second interdigitated electrodes oppose each other, a first gap region that is in between a first busbar and the overlapping region and that includes the first interdigitated electrodes but not the second interdigitated electrodes, and a second gap region that is in between a second busbar and the overlapping region and that includes the second interdigitated electrodes but not the first interdigitated electrodes. A ratio d/p is about 0.5 or less, where d is a thickness of the piezoelectric layer and p is a distance between centers of adjacent first and second interdigitated electrodes. A first wall of the cavity is located under the first busbar or the first gap region, and a second wall of the cavity is located under the second busbar or the second gap region.
An acoustic wave device includes a support substrate including top and bottom surfaces and a cavity or air gap, a piezoelectric layer on the support substrate and including top and bottom surfaces, and an electrode on the top surface of the piezoelectric layer and including top and bottom surfaces. At least a portion of the electrode is over the cavity or the air gap, and an equation 0.002 Tg ≤ 0.5(Lb - Ls) < Te is satisfied, where Ls is a maximum length of the top surface of the electrode, Lb is a maximum length of the bottom surface of the electrode, Tg is a distance between the top surface of the piezoelectric layer and the top surface of the support substrate, and Te is a thickness of the electrode.
Acoustic resonator devices, filers, and methods. An acoustic resonator includes a substrate and a piezoelectric plate, a portion of the piezoelectric plate being a diaphragm spanning a cavity in the substrate. A conductor pattern on a front surface of the piezoelectric plate includes interleaved interdigital transducer (IDT) fingers connected alternately to first and second busbars. The interleaved IDT fingers are on the diaphragm, and the interleaved IDT fingers include at least a first pair of interleaved spiral IDT fingers.
G01B 21/18 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring depth
G01B 21/28 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring areas
G01N 21/27 - Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G01N 25/00 - Investigating or analysing materials by the use of thermal means
G06T 7/55 - Depth or shape recovery from multiple images
An acoustic wave device includes a piezoelectric layer including lithium niobate or lithium tantalate, and a series arm resonator and a parallel arm resonator each including at least a pair of a first electrode and a second electrode on the piezoelectric layer. The acoustic wave device uses a bulk wave in a first thickness-shear mode. A film thickness of a first portion of the piezoelectric layer in the series arm resonator is different from a film thickness of a second portion of the piezoelectric layer in the parallel arm resonator. In each of the series arm resonator and the parallel arm resonator, assuming a film thickness of the piezoelectric layer is d and a distance between centers of the first electrode and the second electrode adjacent to each other is p, a ratio d/p is less than or equal to about 0.5.
An acoustic resonator is fabricated by bonding a first piezoelectric plate to a substrate and spans locations for a first and second cavity in the substrate. A top surface of the first piezoelectric plate is planarized to a first thickness. A bonding layer is formed on the first piezoelectric plate and spans the first and second cavity locations. A second piezoelectric plate is bonded to the bonding layer and spans the first and second cavity locations. A portion of the second piezoelectric plate spanning the second cavity location is etched away to form a first membrane over the first cavity location and a second membrane over the second cavity location. Interdigital transducers are formed on the first and second membranes over the first and second cavity location to form a first and second resonator on the same die.
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
H01L 41/04 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof - Details of piezo-electric or electrostrictive elements
H01L 41/332 - Shaping or machining of piezo-electric or electrostrictive bodies by etching, e.g. lithography
H03H 9/205 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
An acoustic resonator is fabricated by forming a patterned first photoresist mask on a piezoelectric plate at locations of a desired interdigital transducer (IDT) pattern. An etch-stop layer is then deposited on the plate and first photoresist mask. The first photoresist mask is removed to remove parts of the etch-stop and expose the plate. An IDT conductor material is deposited on the etch stop and the exposed plate. A patterned second photoresist mask is then formed on the conductor material at locations of the IDT pattern. The conductor material is then etched over and to the etch-stop to form the IDT pattern which has interleaved fingers on a diaphragm to span a substrate cavity. A portion of the plate and the etch-stop from the diaphragm. The etch-stop and photoresist mask are impervious to this etch. The second photoresist mask is removed to leave the IDT pattern.
H01L 41/29 - Forming electrodes, leads or terminal arrangements
H01L 41/332 - Shaping or machining of piezo-electric or electrostrictive bodies by etching, e.g. lithography
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
23.
ELECTRODE GEOMETRY TO MINIMIZE STRESS IN TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS
An acoustic resonator device includes a piezoelectric plate attached to a substrate. A portion of the piezoelectric plate forms a diaphragm suspended over a cavity in the substrate. A first conductor level includes first and second interdigital transducer (IDT) first-level busbars disposed along opposing sides of the diaphragm, and first and second sets of IDT fingers extending from the first and second busbars, respectively, wherein the first and second sets of IDT fingers are interleaved and disposed on the diaphragm. A second conductor level includes first and second second-level busbars that overlap at least a portion of the first and second busbars, respectively. Portions of the first and second second-level busbars that extend onto the diaphragm have rounded corners.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a piezoelectric plate having opposed front and back surfaces. A first electrode and a second electrode are formed on the front surface of the piezoelectric plate, the first and second electrodes and the piezoelectric plate configured such that a radio frequency signal applied between the first and second electrodes excites a shear primary acoustic mode in the piezoelectric plate. The first electrode and the second electrode have trapezoidal cross-sectional shapes. A sidewall angle of at least one side surface of the first electrode and a sidewall angle of at least one side surface of the second electrode are greater than or equal to 70 degrees and less than or equal to 110 degrees.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.85 times a thickness of the piezoelectric plate.
Filter devices and methods are disclosed. A filter device includes a substrate having a surface. A back surface of a single-crystal piezoelectric plate is attached to the surface of the substrate, portions of the single-crystal piezoelectric plate forming a plurality of diaphragms spanning respective cavities in the substrate. A conductor pattern is formed on a front surface of the piezoelectric plate, the conductor pattern including a plurality of interdigital transducers (IDTs) of a plurality of resonators. Interleaved fingers of at least a first IDT of the plurality of IDTs are disposed on a diaphragm having a first thickness, and interleaved fingers of at least a second IDT of the plurality of IDTs are disposed on a diaphragm having a second thickness less than the first thickness.
Filter devices and methods of fabricating filter devices. A filter device includes a first chip and a second chip. The first chip has a first material stack and contains one or more series resonators of a ladder filter circuit. The second chip has a second material stack and contains one or more shunt resonators of the ladder filter circuit. The first material stack and the second material stack are different.
Acoustic resonator devices and filters are disclosed. A piezoelectric plate is attached to a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A first conductor pattern is formed on a surface of the piezoelectric plate. The first conductor pattern includes interleaved fingers of an interdigital transducer disposed on the diaphragm, and a first plurality of contact pads. A second conductor pattern is formed on a surface of a base, the second conductor pattern including a second plurality of contact pads. Each pad of the first plurality of contact pads is directly bonded to a respective pad of the second plurality of contact pads. A ring-shaped seal is form between a perimeter of the piezoelectric plate and a perimeter of the base.
H03H 9/25 - Constructional features of resonators using surface acoustic waves
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H03H 3/10 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The piezoelectric plate and the IDT configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode in the diaphragm. A half-lambda dielectric layer is formed on one of the front surface and back surface of the piezoelectric plate.
The present disclosure provides systems and methods for scalable and parallel computation of hierarchical cascading in finite element method (FEM) simulations of surface acoustic wave (SAW) devices. Different computing units of a cluster or cloud service may be assigned to independently model different core blocks or combinations of core blocks for iterative cascading to generate a model of the SAW devices. Similarly, frequency ranges may independently be assigned to computing units for modeling and analysis of devices, drastically speeding up computation.
Resonator devices, filter devices, and methods of fabrication are disclosed. A resonator device includes a substrate and a single-crystal piezoelectric plate having parallel front and back surfaces. An acoustic Bragg reflector is sandwiched between a surface of the substrate and the back surface of the single-crystal piezoelectric plate. An interdigital transducer (IDT) is formed on the front surface. The IDT is configured to excite shear acoustic waves in the piezoelectric plate in response to a radio frequency signal applied to the IDT.
H03H 9/125 - Driving means, e.g. electrodes, coils
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 9/205 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
Acoustic resonator devices and filters are disclosed. A filter includes a substrate and a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate. A conductor pattern is formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators, wherein interleaved fingers of each of the plurality of IDTs are disposed on respective portions of the piezoelectric plate suspended over one or more cavities formed in the substrate. The plurality of resonators includes a shunt resonator and a series resonator. A first thickness of a first dielectric layer deposited between the fingers of the IDT of the shunt resonator is greater than a second thickness of a second dielectric layer deposited between the fingers of the IDT of the series resonator.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
There is disclosed a surface acoustic wave sensor. An interdigital transducer (IDT) and a first reflector are formed on a surface of a piezoelectric substrate. The first reflector is displaced from the IDT in a direction of acoustic wave propagation. The first reflector includes a plurality of elongate reflective elements including a first reflective element and N additional reflective elements, where N is a positive integer. A long axis of each of the reflective elements is perpendicular to the direction of acoustic wave propagation, and a distance between adjacent reflective elements along the direction of acoustic wave propagation is a linear function of distance from the first reflective element along the direction of acoustic wave propagation.
An acoustic filter including a piezoelectric layer; an acoustic resonator structure monolithically disposed on the piezoelectric layer, the acoustic resonator structure including an arrangement of planar interdigitated resonator fingers; and a lumped capacitive structure monolithically disposed on the piezoelectric layer and being electrically coupled to the acoustic resonator structure, the lumped capacitive structure including an arrangement of planar interdigitated capacitive fingers, each of at least one of the interdigitated capacitive fingers having an edge that is entirely continuous.
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
H03H 9/19 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
Communications receivers and devices are disclosed. A communications receiver includes a low noise amplifier; a multi-band transmit blocking filter having a first port connected to an output of the low noise amplifier, and an RF analog-to-digital converter having an input connected to a second port of the multi-band transmit blocking filter. The multi-band transmit filter passes the receive frequencies of a group of two or more LTE bands, where a first receive frequency range of a first band in the group and a second receive frequency range of a second band in the group are disjoint and not subsets of a receive frequency range of a third band in the group, and stops the transmit frequencies of at least some bands in the group.
A method of analyzing a microwave acoustic wave (AW) structure comprises defining a physical model of the AW structure, partitioning the physical model into a plurality of unit blocks, identifying at least one core block within the plurality of original unit blocks, computing characteristics of each of the at least one core block, deriving characteristics for each of the original unit blocks from the computed characteristics of the core block(s), combining the original unit blocks into a single block having computed characteristics derived from the characteristics of the unit blocks, such that the single block subsumes the plurality of original unit blocks, and deriving at least one electrical response of the physical model at least partially from the computed characteristics of the single block.
There are disclosed radio frequency multiplexers and methods of designing radio frequency multiplexers. A radio frequency multiplexer includes three or more band-pass filters having respective passbands, each band-pass filter comprising two or more acoustic resonators. A first end of each of the three or more band-pass filters is connected to a respective branch port. A second end of each of the three or more band-pass filters is connected to a common node without an intervening phasing network. A shunt reactive element connected between the common node and ground.
H04B 1/48 - Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
H03H 9/54 - Filters comprising resonators of piezoelectric or electrostrictive material
H04B 1/10 - Means associated with receiver for limiting or suppressing noise or interference
Bandpass filters and methods of designing bandpass filters are disclosed. A bandpass filter includes a plurality of series acoustic resonators connected in series between an input and an output, and a plurality of\ shunt acoustic resonators, each shunt acoustic resonator connected between a ground and one of the input, the output, and a junction between two of the plurality of series acoustic resonators. A first shunt resonator of the plurality of shunt resonators has a motional resonance frequency higher than and adjacent to an upper edge of a passband of the bandpass filter.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
H03H 3/10 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
Communications devices, triplexers, high-pass filters, and low-pass filters are disclosed. A communications device includes a triplexer configured to pass radio frequency signals in a frequency range from 450 MHz to 960 MHz between a common port and a first branch port, pass radio frequency signals in a frequency range from 1400 MHz to 2200 MHz between the common port and a second branch port, and pass radio frequency signals in a frequency range above 2300 MHz between the common port and a third branch port.
A narrow-band acoustic filter comprises an input and an output, and at least one acoustic resonator pair coupled between the input and the output. Each of the acoustic resonator pair(s) comprises at least one in-line acoustic resonator and in-shunt acoustic resonator that operate together to create a nominal passband. The acoustic filter further comprises at least one capacitive element in parallel with one of the in-line acoustic resonator and the in-shunt acoustic resonator of each of the acoustic resonator pair(s), thereby sharpening one of a lower edge and an upper edge of the nominal passband.
A method of designing an acoustic microwave filter in accordance with frequency response requirements comprises generating a modeled filter circuit design having a plurality of circuit elements comprising an acoustic resonant element defined by an electrical circuit model that comprises a parallel static branch, a parallel motional branch, and one or both of a parallel Bragg Band branch that models an upper Bragg Band discontinuity and a parallel bulk mode function that models an acoustic bulk mode loss. The method further comprises optimizing the modeled filter circuit design to generate an optimized filter circuit design, comparing a frequency response of the optimized filter circuit design to the frequency response requirements, and constructing the acoustic microwave filter from the optimized filter circuit design based on the comparison.
A communications device includes a tunable transmitter impedance matching network in series with a transmit filter. The tunable transmitter impedance matching network matches an input impedance of the transmit filter to the output impedance of a power amplifier over a portion of a transmit frequency band designated by a tuning input.
H04B 1/38 - Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
An RF filter comprises a signal transmission path having an input and an output, a plurality of resonant elements disposed along the signal transmission path between the input and the output, and a plurality of non-resonant elements coupling the resonant elements together to form a stop band having a plurality of transmission zeroes corresponding to respective frequencies of the resonant elements, and at least one sub-band between the transmission zeroes. The non-resonant elements comprise at least one variable non-resonant element for selectively introducing at least one reflection zero within the stop band to create a pass band in a selected one of the sub-band(s). The RF filter further comprises an electrical controller configured for receiving an operating temperature, and adjusting the variable non-resonant element(s) based on the received operating temperature, thereby selectively moving the reflection zero(es) along the stop band to move the pass band within the selected sub-band.
A method of designing an acoustic microwave filter (100) comprises selecting a filter section based on frequency response requirements. The filter section includes an input (106), an output (108), and a plurality of circuit elements. The circuit elements have at least in-line acoustic resonators (102a, 104a) or in-shunt acoustic resonators (102b, 104b). The method further comprises selecting a value for each circuit element, selecting a number of filter sections, and cascading the selected number of filter sections to create a cascaded filter circuit design, such that at least one pair of immediately adjacent filter sections are connected to each other via their inputs or their outputs. The method further comprises adding parasitic effects to the cascaded filter circuit design to create a pre-optimized filter circuit design, optimizing the pre-optimized filter circuit design to create a final filter circuit design, and constructing the acoustic microwave filter based on the final filter circuit design.
A method of designing a microwave filter using a computerized filter optimizer, comprises generating a filter circuit design in process (DIP) comprising a plurality of circuit elements having a plurality of resonant elements and one or more non-resonant elements, optimizing the DIP by inputting the DIP into the computerized filter optimizer, determining that one of the plurality of circuit elements in the DIP is insignificant, removing the one insignificant circuit element from the DIP, deriving a final filter circuit design from the DIP, and manufacturing the microwave filter based on the final filter circuit design.
A method of designing an acoustic microwave filter in accordance with frequency response requirements. The method comprises selecting an initial filter circuit structure including a plurality of circuit elements comprising at least one resonant element and at least one other reactive circuit element, selecting lossless circuit response variables based on the frequency response requirements, selecting a value for each of the circuit elements based on the selected circuit response variables to create an initial filter circuit design, transforming the resonant element(s) and the other reactive circuit element(s) of the initial filter circuit design into at least one acoustic resonator model to create an acoustic filter circuit design, adding parasitic effects to the acoustic filter circuit design to create a pre-optimized filter circuit design, optimizing the pre-optimized filter circuit design to create a final filter circuit design, and constructing the acoustic microwave filter based on the final filter circuit design.
patents
